Vertical cavity surface emitting laser with stable polarization and manufacturing method thereof

Abstract

The invention provides a polarization-stable vertical cavity surface emitting laser and a manufacturing method thereof. The laser comprises a substrate, an N-type doping layer, an N-surface electrode, an N-type DBR, an active region, a current limiting layer, a P-type doping layer, a P-surface electrode and a columnar dielectric film DBR. Wherein the columnar dielectric film DBR is composed of a first film dielectric material layer and a second film dielectric material layer which alternately grow on two orthogonally oriented planes. The cylindrical dielectric film DBR has high and low refractive indexes for one kind of linear polarized light, the refractive index values of the cylindrical dielectric film DBR are the same for linear polarized light orthogonal to the cylindrical dielectric film DBR, the mirror image loss of the two kinds of orthogonal linear polarized light has large dichroism, and the refractive indexes of the two kinds of orthogonal linear polarized light are different. Therefore, stable linear polarization emission of the vertical cavity surface emitting laser is realized.

Description

Technical Field

[0001] The present disclosure relates to the technical field of semiconductor lasers, and particularly to a polarization-stable vertical cavity surface emitting laser and a manufacturing method thereof. Background Art

[0002] A vertical cavity surface emitting laser (VCSEL for short) has the advantages of small volume, circular output light spot, single longitudinal mode output, low threshold current and low cost, and is widely used in the fields of optical communication, optical interconnection and optical storage.

[0003] Due to its unstable polarization characteristics, the traditional vertical cavity surface emitting laser affects its applications in the sensing field (such as atomic clocks, magnetometers and gyroscopes). At present, the polarization of the vertical cavity surface emitting laser is mainly stabilized by introducing polarization-related modal gain or mirror loss. These methods include etching rectangular or elliptical mesa, manufacturing anisotropic oxidation holes, introducing anisotropic mechanical strain, etching metal-dielectric gratings or sub-wavelength grating microstructures, epitaxial growth on non-conventional crystal orientation substrates and intracavity patterning design, etc. However, they generally have the deficiencies of limited ability to improve polarization stability, complex preparation process and high cost. Summary of the Invention

[0004] (I) Technical Problems to be Solved

[0005] In view of the above problems, the present disclosure provides a polarization-stable vertical cavity surface emitting laser and a manufacturing method thereof, so as to at least partially solve the technical problems such as limited ability to improve polarization stability, complex preparation process and insufficient compatibility of traditional lasers, so as to realize effective control of the laser emission of the vertical cavity surface emitting laser, making it present a stable linear polarization state, which will not be affected by the existing phase and amplitude anisotropy inside the vertical cavity surface emitting laser, and the device preparation process is fully compatible with the existing mature vertical cavity surface emitting laser epitaxial growth and chip preparation technologies.

[0006] (II) Technical Solutions

[0007] On the one hand, the present disclosure provides a polarization-stable vertical cavity surface emitting laser, including: from bottom to top in sequence: a substrate, an N-type doped layer, an N-side electrode, an N-type DBR, an active region, a current confinement layer, a P-type doped layer, a P-side electrode and a columnar dielectric thin film DBR; wherein, the columnar dielectric thin film DBR is composed of a first thin film dielectric material layer and a second thin film dielectric material layer alternately grown on two orthogonally oriented planes.

[0008] According to an embodiment of the present disclosure, the position of the epitaxial wafer relative to the evaporation source in the vacuum chamber of the evaporation equipment forms a deposition angle. fixed, and a first thin film dielectric material layer with an inclined angle is grown on the epitaxial wafer. In a direction orthogonal to the growth plane of the first thin film dielectric material layer on the epitaxial wafer, a second thin film dielectric material layer is grown.

[0009] According to an embodiment of the present disclosure, the material of the columnar dielectric thin film DBR is a dielectric thin film material for semiconductor lasers, including but not limited to SiO 2 , TiO 2 , ZrO 2 , TaO 2 , ZrO 2 , HfO 2 .

[0010] According to an embodiment of the present disclosure, the inclined angle and the vapor deposition angle satisfy the following formula:

[0011]

[0012] where the scaling factor Mt is a parameter reflecting the influence of material properties on the orientation of the columnar structure.

[0013] According to an embodiment of the present disclosure, the active region sequentially includes, from bottom to top: an N-type waveguide layer, an active layer, and a P-type waveguide layer.

[0014] According to an embodiment of the present disclosure, the type of the current confinement layer is any one of an oxide confinement type, an ion implantation type, and a buried tunnel junction type.

[0015] According to an embodiment of the present disclosure, the N-side electrode is symmetrically disposed at the edge of the upper surface of the N-type doped layer, and the N-side electrode has a AuGeNi / Au, Au / Ge / Ni, or Au / Ge alloy structure; the P-side electrode is symmetrically disposed at the edge of the upper surface of the P-type doped layer, and the P-side electrode has a Ti / Au or Ti / Pt / Au multi-layer structure.

[0016] A second aspect of the present disclosure provides a method for manufacturing a polarization-stable vertical cavity surface emitting laser, which is applied to the polarization-stable vertical cavity surface emitting laser, and includes: fabricating an epitaxial wafer, which includes a substrate, an N-type doped layer, an N-type DBR, an active region, a current confinement layer, and a P-type doped layer from bottom to top; performing photolithography on the epitaxial wafer, and etching downward from the epitaxial wafer to the N-type doped layer to form a mesa structure; preparing a current hole in the current confinement layer; placing the epitaxial wafer forming the mesa structure into the vacuum chamber of the evaporation equipment, and setting the deposition angle of the epitaxial wafer relative to the evaporation source Fixed on the electric mounting seat of the vacuum chamber of the evaporation device; according to the deposition angle After growing the first thin film dielectric material layer on the epitaxial wafer at an inclined angle, rotate the epitaxial wafer by a preset angle relative to the normal of the substrate, and orthogonally grow the second thin film dielectric material layer on the epitaxial wafer; alternately perform the orthogonal growth of the first thin film dielectric material layer and the second thin film dielectric material layer to prepare a columnar dielectric thin film DBR on the mesa structure, and obtain a vertical cavity surface emitting laser.

[0017] According to an embodiment of the present disclosure, preparing the current hole in the current limiting layer includes: when the current limiting layer is of an oxidation limiting type, putting the epitaxial wafer into a wet oxidation furnace, and performing wet oxidation treatment on the oxide layer from the side of the mesa structure, so that the oxide layer forms insulating aluminum oxide from the side inward.

[0018] According to an embodiment of the present disclosure, it further includes: symmetrically growing a P-side electrode at the edge of the upper surface of the P-type doped layer; symmetrically growing an N-side electrode at the edge of the upper surface of the N-type doped layer.

[0019] (III) Beneficial effects

[0020] The polarization-stable vertical cavity surface emitting laser and its manufacturing method provided by the present disclosure have at least the following beneficial effects:

[0021] 1. For a linearly polarized light, the columnar dielectric thin film DBR adopted by the present disclosure has different refractive indices of high and low, while for the linearly polarized light orthogonal to it, their refractive index values are the same, and the mirror losses of these two orthogonal linearly polarized lights have large dichroism, so as to achieve stable linear polarization emission of the vertical cavity surface emitting laser;

[0022] 2. The columnar dielectric thin film DBR partially or completely replaces the P-type DBR structure of the vertical cavity surface emitting laser, has the characteristic of reducing Joule heat generation, and makes the temperature distribution of the device more uniform;

[0023] 3. The structure of the vertical cavity surface emitting laser is independent of a specific material system, is applicable to vertical cavity surface emitting lasers of different wavelengths, and is completely compatible with the epitaxial growth and manufacturing processes of conventional vertical cavity surface emitting lasers, and is easy to mass-produce;

[0024] 4. The manufacturing method of the vertical cavity surface emitting laser has good consistency and low cost. Description of the drawings

[0025] To more fully understand the present disclosure and its advantages, reference will now be made to the following description in conjunction with the accompanying drawings, where:

[0026] Figure 1Schematically shows the structural diagram of a vertical cavity surface emitting laser provided by an embodiment of the present disclosure;

[0027] Figure 2 Schematically shows the flowchart of a manufacturing method of a vertical cavity surface emitting laser provided by an embodiment of the present disclosure;

[0028] Figure 3 Schematically shows the principle diagram for preparing a columnar dielectric thin film DBR provided by an embodiment of the present disclosure;

[0029] Figure 4 Schematically shows the coordinate system diagram of the vapor incident angle and the tilt angle of the dielectric thin film layer provided by an embodiment of the present disclosure;

[0030] Figure 5A and Figure 5B Schematically shows the electric field mode distribution and refractive index distribution diagram of a linearly polarized resonant mode provided by an embodiment of the present disclosure.

[0031] Description of reference numerals:

[0032] 1 - Substrate;

[0033] 2 - N-type doping layer;

[0034] 3 - N-side electrode;

[0035] 4 - N-type DBR;

[0036] 5 - Active region;

[0037] 501 - N-type waveguide layer;

[0038] 502 - Active layer;

[0039] 503 - P-type waveguide layer;

[0040] 6 - Current confinement layer;

[0041] 7 - P-type doping layer;

[0042] 8 - P-side electrode;

[0043] 9 - Columnar dielectric thin film DBR;

[0044] 901 - First thin film dielectric material layer;

[0045] 902 - Second thin film dielectric material layer;

[0046] 10 - Epitaxial wafer;

[0047] 11 - Electric mounting base;

[0048] 12 - Evaporation equipment vacuum chamber;

[0049] 13 - Crucible;

[0050] 14 - Electron gun or heating system. Detailed implementation manners

[0051] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are merely exemplary and are not intended to limit the scope of the present disclosure. In the following detailed description, for the sake of explanation, numerous specific details are set forth in order to provide a comprehensive understanding of the embodiments of the present disclosure. However, obviously, one or more embodiments can also be implemented without these specific details. In addition, in the following description, descriptions of well - known structures and technologies are omitted to avoid unnecessarily obscuring the concepts of the present disclosure.

[0052] The terms used herein are merely for describing specific embodiments and are not intended to limit the present disclosure. The terms "including", "comprising", etc. used herein indicate the presence of the described features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0053] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification and should not be interpreted in an idealized or overly rigid manner.

[0054] Figure 1 Schematically shows a polarization - stable vertical - cavity surface - emitting laser provided by an embodiment of the present disclosure.

[0055] As Figure 1 shown, the laser structure includes: a substrate 1, an N - type doped layer 2, an N - side electrode 3, an N - type DBR 4, an active region 5, a current - limiting layer 6, a P - type doped layer 7, a P - side electrode 8, and a columnar dielectric thin - film DBR 9.

[0056] The distributed Bragg reflector (abbreviated as DBR in English) structure is a multi - layer structure formed by alternately depositing two or more materials with different refractive indices, and these materials have high refractive indices and low refractive indices respectively.

[0057] In the embodiments of the present disclosure, the columnar dielectric thin - film DBR 9 can be composed of dielectric thin - film layers (i.e., a first thin - film dielectric material layer 901 and a second thin - film dielectric material layer 902) that are alternately grown on two orthogonally oriented planes by using physical vapor deposition technology. The columnar dielectric thin - film DBR 9 formed by the alternately grown multi - layer dielectric thin - film layers has high and low different refractive indices for one linearly polarized light, while for the linearly polarized light orthogonal to it, their refractive index values are the same, and the two orthogonally linearly polarized lights show significant dichroism in mirror loss.

[0058] The position of the epitaxial wafer relative to the evaporation source in the vacuum chamber of the evaporation equipment is at a deposition angle fixed, and a first thin film dielectric material layer 901 with an inclined angle is grown on the epitaxial wafer In the direction orthogonal to the growth plane of the first thin film dielectric material layer 901 on the epitaxial wafer, a second thin film dielectric material layer 902 is grown. That is, the epitaxial wafer is placed in the vacuum chamber of the dielectric material growth equipment (i.e., the evaporation equipment vacuum chamber) and is at an oblique angle relative to the evaporation source The epitaxial wafer is fixed on the electric mounting seat of the equipment, and at the deposition angle Grow an inclined angle on the epitaxial wafer After a columnar thin film of a dielectric material (i.e., the first thin film dielectric material layer 901) is grown, the epitaxial wafer is rotated by a preset angle (preferably 90°) relative to the substrate normal, and a columnar thin film of another dielectric material (i.e., the second thin film dielectric material layer 902) is grown orthogonally on the epitaxial wafer.

[0059] Furthermore, the inclination angle of the dielectric thin film layer on the corresponding plane And the vapor deposition angle Satisfy the following formula:

[0060]

[0061] Among them, the proportionality factor Mt is a parameter reflecting the influence of material properties (such as surface diffusion ability, deposition rate, etc.) on the columnar structure orientation. Different materials and deposition conditions will result in different M t .

[0062] It should be noted that the columnar dielectric thin film DBR9 can partially or completely replace the P-type DBR structure of the vertical cavity surface emitting laser.

[0063] Optionally, the columnar dielectric thin film DBR9 can be selected from dielectric thin film materials for semiconductor lasers, including but not limited to SiO 2 , TiO 2 , ZrO 2 , TaO 2 , ZrO 2 , HfO 2 etc.

[0064] It can be understood that the polarization-stable vertical cavity surface emitting laser provided by the embodiments of the present disclosure can achieve effective control of laser emission, making it exhibit a stable linear polarization state, which is not affected by the existing phase and amplitude anisotropy inside the vertical cavity surface emitting laser, thereby realizing stable linear polarization emission of the vertical cavity surface emitting laser. At the same time, the polarization stability of the vertical cavity surface emitting laser structure is independent of a specific material system, applicable to vertical cavity surface emitting lasers of different wavelengths, and is fully compatible with the epitaxial growth and fabrication processes of conventional vertical cavity surface emitting lasers.

[0065] The active region 5 includes, from bottom to top in sequence: an N-type waveguide layer 501, an active layer 502, and a P-type waveguide layer 503.

[0066] Optionally, the structure of the active layer 502 can be a single-layer quantum well, quantum dot, and quantum wire structure, or a multi-layer quantum well, quantum dot, and quantum wire structure.

[0067] Optionally, the material of the active layer 502 includes one of the following materials: III-V semiconductor materials or II-VI semiconductor materials.

[0068] Optionally, the gain peak wavelength range of the active layer 502 covers the near-ultraviolet to infrared bands.

[0069] The type of the current confinement layer 6 is any one of an oxide confinement type, an ion implantation type, and a buried tunnel junction type.

[0070] Optionally, the current confinement layer 6 is located between the P-type doped layer 7 and the active region 5, and / or between the active region 5 and the N-type DBR 4. The shape can be a regular pattern, such as a circle, an ellipse, etc., or an irregular pattern, and the aperture can be between 2 μm and 20 μm.

[0071] The N-side electrode 3 is symmetrically disposed at the edge of the upper surface of the N-type doped layer 2, and the N-side electrode 3 has a AuGeNi / Au, Au / Ge / Ni, or Au / Ge alloy structure. The P-side electrode 8 is symmetrically disposed at the edge of the upper surface of the P-type doped layer 7, and the P-side electrode 8 has a Ti / Au or Ti / Pt / Au multi-layer structure. The shapes of the N-side electrode 3 and the P-side electrode 8 can both be regular shapes, such as a ring, or irregular shapes.

[0072] Another aspect of the embodiments of the present disclosure provides a method for fabricating a polarization-stable vertical cavity surface emitting laser, as Figure 2 shown, including S1 to S7.

[0073] In operation S1, an epitaxial wafer is fabricated, and the epitaxial wafer includes, from bottom to top, a substrate 1, an N-type doped layer 2, an N-type DBR 4, an active region 5, a current confinement layer 6, and a P-type doped layer 7.

[0074] Optionally, techniques such as molecular beam epitaxy or metalorganic chemical vapor deposition are used to fabricate an epitaxial structure (i.e., an epitaxial wafer).

[0075] In operation S2, photolithography is performed on the epitaxial wafer, and etching is performed from the epitaxial wafer down to the N-type doped layer 2 to form a mesa structure.

[0076] Optionally, after photolithography of the epitaxial wafer, wet etching or dry etching can be used to etch from the fabricated epitaxial structure down to the N-type doped layer 2. Dry etching can use Cl 2 / BCl 3 / Ar or Cl 2 / H 2 / Ar mixed gas, with an etching selectivity ratio ≥ 10:1. Subsequently, the surface SiO 2 mask is removed using buffered oxide etchant (BOE) or dry etching technology.

[0077] Exemplarily, by the method of water bath heating, the epitaxial wafer is cleaned with acetone and ethanol, and then washed, dried with deionized water. Then, a layer of SiO 2 is grown on the epitaxial wafer as a mask. After spin-coating photoresist, a mesa structure is etched through an optical mask using ultraviolet exposure and etching technology.

[0078] In operation S3, current holes are fabricated in the current limiting layer 6.

[0079] Based on the above embodiments, in this embodiment, when the current limiting layer 6 is of the oxidation-limiting type, the epitaxial wafer is placed in a wet oxidation furnace, and wet oxidation treatment is performed on the oxide layer from the side of the mesa structure, so that the oxide layer forms insulating aluminum oxide from the side inwards.

[0080] Exemplarily, when fabricating current holes in the current limiting layer, if it is of the oxidation-limiting type, preferably, an oxidation reaction is performed on the oxide layer in an oxidation atmosphere at 410°C to 450°C using a carrier gas carrying water vapor, so as to form a dense and uniform oxidation limiting layer through a wet oxidation reaction, where the flow rate of the carrier gas is 1 L / min to 2 L / min, and the temperature of the water vapor is 90°C to 95°C.

[0081] Optionally, when the current limiting layer 6 is of the oxidation-limiting type, during the wet oxidation treatment, N 2 with stable chemical properties and not reacting with aluminum oxide or the oxide layer can be selected as the carrier gas and carry water vapor into the oxidation furnace. At the same time, the carrier gas N 2The flow rate control is between 1 L / min and 2 L / min to ensure that water vapor is fully diffused to the surface of the oxide layer and to avoid excessive oxidation reaction rate and degradation of the alumina layer quality caused by too large a flow rate. In addition, since the temperature of water vapor has a direct impact on the oxidation reaction rate and the quality of the alumina layer, the temperature of water vapor can be controlled between 90 °C and 95 °C, which can not only ensure the full evaporation and diffusion of water vapor, but also avoid excessive oxidation reaction rate and loose structure of the alumina layer caused by too high a temperature. The temperature of the oxidation atmosphere can be controlled between 410 °C and 450 °C to ensure the full progress of the oxidation reaction and to avoid the destruction of the alumina layer structure and performance degradation caused by too high a temperature.

[0082] In operation S4, the epitaxial wafer forming the mesa structure is placed in the evaporation equipment vacuum chamber, and the epitaxial wafer is at a deposition angle relative to the evaporation source and fixed on the electric mounting seat in the evaporation equipment vacuum chamber.

[0083] In operation S5, according to the deposition angle After growing the first thin film dielectric material layer 901 at an inclined angle on the epitaxial wafer, the epitaxial wafer is rotated by a preset angle relative to the normal of the substrate 1, and the second thin film dielectric material layer 902 is grown orthogonally on the epitaxial wafer.

[0084] Figure 3 Schematically shows the principle diagram for the preparation of the columnar dielectric thin film DBR provided by the embodiment of the present disclosure.

[0085] As Figure 3 shown, the epitaxial wafer 10 is placed in the evaporation equipment vacuum chamber and is at an oblique angle relative to the evaporation source (i.e., the deposition angle), and the epitaxial wafer 10 is fixed on the electric mounting seat 11 of the equipment. According to the deposition angle a first thin film dielectric material layer 901 of a dielectric material with an inclined angle is grown on the epitaxial wafer After that, the epitaxial wafer 10 is rotated by a preset angle (preferably 90°) relative to the normal of the substrate 1, and a second thin film dielectric material layer 902 of another dielectric material is grown orthogonally on the epitaxial wafer.

[0086] Exemplarily, the epitaxial wafer 10 is obliquely fixed on the electric mounting seat 11 in the evaporation equipment vacuum chamber 12. When the equipment is working, the electron gun or the heating system 14 processes the material in the crucible 13, and the gas flow direction of the evaporation source is at a deposition angle with the epitaxial wafer 10 .

[0087] Figure 4 Schematically shows the coordinate system diagram of the vapor incident angle (i.e., the deposition angle) and the inclined angle of the dielectric thin film layer according to the embodiment of the present disclosure.

[0088] Specifically, as Figure 4 shown, the inclination angle of the dielectric thin film layer on the corresponding plane is related to the vapor deposition angle , that is , where the scaling factor M t is a parameter reflecting the influence of material properties (such as surface diffusion ability, deposition rate, etc.) on the orientation of the columnar structure. Different materials and deposition conditions will result in different M t . It should be noted that there will be a certain difference between the experimentally measured value and the value predicted by the tangent rule.

[0089] Exemplarily, based on a standard vertical cavity surface emitting laser structure of gallium arsenide (GaAs), the designed output center wavelength is 940 nm. The columnar dielectric thin film DBR9 is used to replace the top mirror based on gallium aluminum arsenide (AlGaAs), and titanium oxide (TiO 2 ) and zirconium oxide (ZrO 2 ) columnar thin films (dielectric thin film layer) are alternately grown on the yz and xz orthogonal planes by electron beam evaporation.

[0090] Specifically, when the incident angle during the vapor deposition process is a certain specific value, the refractive index difference between the o - polarized titanium oxide and the e - polarized zirconium oxide is equal. At this time, the refractive index difference between the e - polarized titanium oxide and the o - polarized zirconium oxide is the largest. At this time, the columnar dielectric thin film DBR9 has the strongest dichroism, and for the Y - polarized light, the refractive index contrast is the highest.

[0091] Specifically, when deviates from this specific value, the difference in the refractive index difference between the o - polarized titanium oxide and the e - polarized zirconium oxide appears and increases, but this difference is much smaller than the refractive index difference between the e - polarized titanium oxide and the o - polarized zirconium oxide. That is, for the Y - polarized light, the refractive index contrast is still very high. Therefore, even when the incident angle during the vapor deposition process that strictly maintains the intersection of the refractive indices of the o - polarized titanium oxide and the e - polarized zirconium oxide is not satisfied, it is still expected to generate a large specular loss dichroism.

[0092] FIG. 5 schematically shows the electric field mode distribution and refractive index distribution of the linear polarization resonance mode according to an embodiment of the present disclosure.

[0093] As Figure 5A shown, when the incident angle during the vapor deposition process is 10°, for the Y - linearly polarized light, the dielectric DBR structure 7 has different high and low refractive indices.

[0094] As Figure 5BAs shown, for the X linearly polarized light orthogonal thereto, the refractive index values of the dielectric DBR structure 7 are the same, showing low reflection characteristics. At the same time, the mirror losses of the two orthogonally polarized lights have a large dichroism, and the vertical cavity surface emitting laser with a columnar thin film dielectric mirror can achieve good polarization selection.

[0095] In operation S6, the orthogonal growth of the first thin film dielectric material layer 901 and the second thin film dielectric material layer 902 is alternately performed to prepare the columnar dielectric thin film DBR9 on the mesa structure, so as to obtain a vertical cavity surface emitting laser.

[0096] Specifically, the columnar dielectric thin film DBR9 can be prepared on the mesa by means of tape peeling or photolithographic etching.

[0097] Optionally, the dielectric thin film layers of the two dielectric materials are alternately grown on the orthogonal plane of the epitaxial wafer or on the same plane.

[0098] Optionally, the alternately grown multi-layer dielectric thin film layers can be deposited and grown on the epitaxial wafer by means of dielectric film growth techniques such as thermal evaporation, electron beam evaporation or sputtering.

[0099] In operation S7, the P-side electrode 8 is symmetrically grown at the edge of the upper surface of the P-type doped layer 7 in sequence, and the N-side electrode 3 is symmetrically grown at the edge of the upper surface of the N-type doped layer 2, and finally a vertical cavity surface emitting laser is obtained.

[0100] Those skilled in the art can understand that the features recited in the various embodiments and / or claims of the present disclosure can be combined and / or combined in various ways, even if such combinations or combinations are not explicitly recited in the present disclosure. In particular, without departing from the spirit and teachings of the present disclosure, the features recited in the various embodiments and / or claims of the present disclosure can be combined and / or combined in various ways. All such combinations and / or combinations fall within the scope of the present disclosure.

[0101] Although the present disclosure has been shown and described with reference to specific exemplary embodiments thereof, those skilled in the art should understand that various changes in form and detail can be made therein without departing from the spirit and scope of the present disclosure as defined by the appended claims and their equivalents. Therefore, the scope of the present disclosure should not be limited to the above embodiments, but should be determined not only by the appended claims but also by the equivalents of the appended claims.

Claims

1. A polarization-stabilized vertical cavity surface emitting laser, characterized in that: From bottom to top, they include: A substrate (1), an N-type doped layer (2), an N-side electrode (3), an N-type DBR (4), an active region (5), a current limiting layer (6), a P-type doped layer (7), a P-side electrode (8), and a columnar dielectric film DBR (9); wherein: The columnar dielectric thin film DBR (9) is composed of a first thin film dielectric material layer (901) and a second thin film dielectric material layer (902) alternately grown on two orthogonally oriented planes.

2. The polarization-stabilized vertical cavity surface emitting laser according to claim 1, characterized in that: The position of the epitaxial wafer relative to the evaporation source in the vacuum chamber of the evaporation equipment is at a deposition angle fixed, the epitaxial wafer is grown with a tilt angle The first thin film dielectric material layer (901) is formed on the epitaxial wafer, and the second thin film dielectric material layer (902) is grown in a direction orthogonal to the growth plane of the first thin film dielectric material layer (901).

3. The polarization-stabilized vertical cavity surface emitting laser according to claim 1, characterized in that: The material of the columnar dielectric film DBR (9) is a dielectric film material for semiconductor lasers, including but not limited to SiO2, TiO2, ZrO2, TaO2, ZrO2, and HfO2.

4. The polarization-stabilized vertical cavity surface emitting laser according to claim 2, characterized in that: The tilt angle and vapor deposition angle Satisfies the following formula: Among them, the proportional factor Mt is a parameter that reflects the influence of material properties on the orientation of the columnar structure.

5. The polarization-stabilized vertical cavity surface emitting laser according to claim 1, characterized in that: The active area (5) comprises, from bottom to top: An N-type waveguide layer (501), an active layer (502) and a P-type waveguide layer (503).

6. The polarization-stabilized vertical cavity surface emitting laser according to claim 1, characterized in that: The type of the current limiting layer (6) is any one of an oxidation limiting type, an ion implantation type and a buried tunnel junction type.

7. The polarization-stabilized vertical cavity surface emitting laser according to claim 1, characterized in that: The N-side electrode (3) is symmetrically arranged at the edge of the upper surface of the N-type doped layer (2), and the N-side electrode (3) is an AuGeNi / Au, Au / Ge / Ni or Au / Ge alloy structure; The P-surface electrode (8) is symmetrically arranged at the edge of the upper surface of the P-type doping layer (7), and the P-surface electrode (8) is a Ti / Au or Ti / Pt / Au multilayer structure.

8. A method for manufacturing a polarization-stabilized vertical cavity surface emitting laser, characterized in that: include: Manufacturing an epitaxial wafer, wherein the epitaxial wafer comprises, from bottom to top, a substrate (1), an N-type doped layer (2), an N-type DBR (4), an active region (5), a current limiting layer (6), and a P-type doped layer (7); Performing photolithography on the epitaxial wafer, and etching downward from the epitaxial wafer to the N-type doped layer (2) to form a mesa structure; Preparing a current hole in the current limiting layer (6); The epitaxial wafer forming the mesa structure is placed in the vacuum chamber of the evaporation equipment, and the epitaxial wafer is deposited at an angle relative to the evaporation source. Fixed on the electric mounting seat of the vacuum chamber of the evaporation equipment; According to the deposition angle After growing a first thin film dielectric material layer (901) on the epitaxial wafer at an inclined angle, rotating the epitaxial wafer by a preset angle relative to the normal line of the substrate (1), and orthogonally growing a second thin film dielectric material layer (902) on the epitaxial wafer; Orthogonal growth of the first thin-film dielectric material layer (901) and the second thin-film dielectric material layer (902) is performed alternately to prepare a columnar dielectric thin-film DBR (9) on the table structure, thereby obtaining a vertical cavity surface emitting laser.

9. The manufacturing method according to claim 8, characterized in that: The step of preparing a current hole in the current limiting layer (6) comprises: When the current limiting layer (6) is of an oxidation limiting type, the epitaxial wafer is placed in a wet oxidation furnace, and the oxide layer is wet oxidized from the side of the mesa structure, so that the oxide layer forms insulating aluminum oxide from the side inward.

10. The manufacturing method according to claim 8, characterized in that: Also includes: A P-surface electrode (8) is symmetrically grown at the edge of the upper surface of the P-type doped layer (7); An N-surface electrode (3) is symmetrically grown at the edge of the upper surface of the N-type doped layer (2).

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