Micro LED chip mass transfer method and electronic components

Abstract

The present invention discloses a method and electronic components for mass transfer of micro LED chips, relating to the field of semiconductor manufacturing technology. A plurality of electrode fixing block groups are arrayed and spaced apart on a driver circuit board to obtain a plurality of target fixing positions. Once the plurality of target fixing positions are obtained, the driver circuit board and the same number of micro LED chips as the target fixing positions on the driver circuit board are placed in the same preset solution. This provides a target fixing position for each micro LED chip, facilitating mass transfer of micro LED chips. Under the action of a three-dimensional light field, light traps are used to capture each micro LED chip in a target placement posture and transfer it to a corresponding target fixing position. This enables the present invention to perform batch transfer of micro LED chips, ensuring transfer efficiency without damaging the micro LED chips.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a method for mass transfer of micro LED chips and electronic components. Background Art

[0002] In the field of semiconductor display technology, micro LEDs (micro LEDs), a new display technology, have attracted much attention due to their high brightness, high color saturation, low power consumption, and long lifespan. The development of micro LED technology has evolved from the initial stages of manually transferring each micro LED chip onto a new substrate to the current leap forward in mass transfer technology for micro LEDs.

[0003] Currently, chip mass transfer technology has been widely discussed. Patent documents with authorization publication numbers CN119181750B, CN116666508B, CN117080323B, CN118412418B, and CN118448551B all mention micro LED chip mass transfer technology. Various methods have been developed for chip mass transfer, including pasting, laser lift-off (LLO), roller pickup, and electron beam forward transfer (FET). Pasting is known for its high precision, but its efficiency is relatively low; LLO offers significant speed advantages, but carries the risk of micro LED damage or defects; roller pickup is very effective for large-scale transfer, but poses challenges for transferring high-precision micro LED arrays; and FET technology can achieve very precise micro LED transfer, but its format is small and its speed is slow. These technologies each have their own advantages and limitations, but together they have driven the advancement of micro LED display technology.

[0004] While existing mass chip transfer technologies have made some progress, some shortcomings remain. Existing technologies such as pasting, FET, LLO, and roller pickup can all transfer chips, but due to technical limitations, multiple transfers are required in practice, and each transfer can only involve direct contact with one or a small number of chips. This results in low transfer efficiency and can easily damage the chips. Summary of the Invention

[0005] The main purpose of this invention is to propose a method and electronic components for mass transfer of micro LED chips, aiming to solve the technical problem in the existing technology that, due to technical limitations, only one or a small number of chips can be transferred during actual operation, resulting in low transfer efficiency and easy damage to the chips.

[0006] To achieve the above objectives, in a first aspect, the present invention provides a method for mass transfer of micro LED chips, comprising the following steps:

[0007] A plurality of electrode fixing block groups are arrayed and spaced apart on a driver circuit board to obtain a plurality of target fixing positions, wherein each electrode fixing block group forms a target fixing position, and the electrode fixing block group includes a P-electrode fixing block and an N-electrode fixing block, and the peripheries of the P-electrode fixing block and the N-electrode fixing block are both coated with a light-curing conductive adhesive;

[0008] Placing the driver circuit board and the plurality of micro LED chips in the same predetermined solution to form a target solution; wherein the number of the micro LED chips is the same as the number of the target fixing positions, and each micro LED chip is matched with a target fixing position, and the micro LED chips are suspended in the target solution;

[0009] forming a plurality of spaced light traps in the predetermined solution; wherein the light traps are cavity structures, and the shape of the light traps matches the shape of any of the micro LED chips;

[0010] Any of the light traps can capture the micro LED chip flowing through the target solution in a flowing state and transfer it to a corresponding target fixing position in a target placement posture, so that the P electrode and N electrode of the micro LED are electrically connected to the P electrode fixing block and the N electrode fixing block of the corresponding target fixing position respectively;

[0011] All the target fixing positions are irradiated with array light of a preset wavelength to photocure all the micro LED chips to the corresponding target fixing positions to obtain electronic components.

[0012] In one embodiment, the step of placing the driver circuit board and the plurality of micro LED chips in the same predetermined solution to form a target solution includes:

[0013] placing the predetermined solution in a container;

[0014] The driving circuit board is placed into the container with the substrate facing downward; wherein the electrode fixing block groups are all arranged upward;

[0015] Placing all the micro LED chips into the container according to a preset density; wherein all the micro LED chips are located above the driver circuit board, the preset density is A, the density of the preset solution is B, and 1.5B≤A≤3B;

[0016] A transparent cover is placed in the container so that the transparent cover is located above all the micro LED chips, and the transparent cover immerses the driver circuit board and all the micro LED chips in the preset solution to form the target solution; wherein a flow gap is formed between all the micro LED chips and the transparent cover.

[0017] In one embodiment, before the step in which any of the light traps can capture the micro LED chip flowing through the target solution in a flowing state and transfer it to a corresponding target fixing position in a target placement posture, so that the P electrode and N electrode of the micro LED are electrically connected to the P electrode fixing block and the N electrode fixing block of the corresponding target fixing position, respectively, the method includes:

[0018] Matching all the micro LED chips with all the target fixing positions on the driver circuit board one by one;

[0019] The three-dimensional light field is modulated into the light trap that cooperates with all the target fixed positions.

[0020] In one embodiment, the steps of any one of the light traps being able to capture the micro LED chip flowing through the target solution while the target solution is in a flowing state and transferring the micro LED chip to a corresponding target fixing position in a target placement posture, so that the P electrode and N electrode of the micro LED are electrically connected to the P electrode fixing block and the N electrode fixing block of the corresponding target fixing position, respectively, include:

[0021] Any of the light traps can capture the micro LED chip flowing through the target solution when the target solution is in a flowing state;

[0022] Adjusting the current placement posture of each micro LED chip to the target placement posture according to the orientation relationship between the P-electrode fixing block and the N-electrode fixing block of each electrode fixing block group, so that the orientation of the P-electrode and the N-electrode fixing block of each micro LED can respectively match the orientation of the P-electrode fixing block and the N-electrode fixing block of the corresponding electrode fixing block group;

[0023] The micro LED chip matched with it is carried and transferred to the target fixing position in the target placement posture through each light trap, so that the P electrode and N electrode of the micro LED are electrically connected to the P electrode fixing block and N electrode fixing block of the corresponding target fixing position respectively.

[0024] In one embodiment, the step of carrying and transferring the micro LED chip matched thereto to the target fixing position in the target placement posture by each light trap, so that the P electrode and N electrode of the micro LED are electrically connected to the P electrode fixing block and N electrode fixing block of the corresponding target fixing position, respectively, includes:

[0025] Carrying the micro LED chip matched with each light trap to the corresponding target fixing position in the target placement posture through each light trap;

[0026] The light field modulation device is controlled to adjust the scattering force of the light trap to release the micro LED chip, so as to transfer the micro LED chip to the corresponding target fixing position, so that the P electrode and N electrode of the micro LED are electrically connected to the P electrode fixing block and N electrode fixing block of the corresponding target fixing position respectively.

[0027] In one embodiment, before placing the driver circuit board and the plurality of micro LED chips in the same predetermined solution, the method further comprises:

[0028] An N-type layer, a light-emitting layer, and a P-type layer are sequentially grown on a surface of a deposition substrate; wherein the deposition substrate structure is made of at least one material selected from sapphire, silicon, or silicon carbide, and a surface of the P-type layer facing away from the light-emitting layer is formed with a plurality of P-electrode connection locations arranged in an array and spaced apart at a first predetermined interval;

[0029] Coating a photoresist material on the surface of each P-electrode connection position for protection;

[0030] The P-type layer and the light-emitting layer are removed from all areas other than the P-electrode connection positions by photolithography to expose the N-type layer; wherein a plurality of N-electrode connection positions are formed in an array in the area where the N-type layer is exposed and are spaced apart at a second preset pitch;

[0031] removing the photoresist material on the surface of all the P-electrode connection positions;

[0032] Sequentially coating the N-electrode connection position and the P-electrode connection position with a light-curing conductive adhesive to form the corresponding N-electrode and the P-electrode;

[0033] The N-type layer is separated from the predetermined deposition base structure to obtain an intermediate structure, and the intermediate structure is cut into a plurality of micro LED chips; wherein each micro LED chip includes the N-type layer, the light-emitting layer, the P-type layer, a P electrode, and an N electrode.

[0034] In one embodiment, after the step of removing the P-type layer and the light-emitting layer in areas other than the P-electrode connection positions by photolithography to expose the N-type layer, the method further includes:

[0035] A plurality of N-electrode connection positions each having a first preset area are divided in the region where the N-type layer is exposed; wherein a gap is formed between each of the N-electrode connection positions and the adjacent P-electrode.

[0036] In one embodiment, the step of arraying and spacing a plurality of electrode fixing block groups on the driving circuit board to obtain a plurality of target fixing positions includes:

[0037] Photoresist is coated on the driver circuit board using photolithography to form a plurality of spaced mounting areas in an array; wherein each of the mounting areas is formed with a first mounting position and a second mounting position spaced apart, the first mounting position being used to mount an N-electrode fixing block, and the second mounting position being used to mount a P-electrode fixing block;

[0038] Laying a layer of conductive material on the first mounting position and the second mounting position corresponding to each of the mounting areas to form the N-electrode fixing block and the growth position respectively;

[0039] Conductive material is continuously laid on the surface of each growth position to form the corresponding P-electrode fixing block, thereby obtaining a plurality of target fixing positions.

[0040] In one embodiment, the step of continuously laying a conductive material on the surface of each growth site to form the corresponding P-electrode fixing block to obtain a plurality of target fixing sites includes:

[0041] Using a photolithography method, coating a photoresist material on the surface of each of the N-electrode fixing blocks for protection;

[0042] Continue laying the conductive material on the surface of each growth site until the height difference between the P-electrode fixing block and the N-electrode fixing block meets a preset requirement; wherein the height of the P-electrode fixing block is greater than the height of the N-electrode fixing block;

[0043] removing all photoresist materials from the surface of the N-electrode fixing block;

[0044] A light-curing conductive adhesive is coated on the surface of each of the N-electrode fixing blocks and each of the P-electrode fixing blocks to obtain a plurality of target fixing positions.

[0045] Based on the same technical concept, in a second aspect, the present invention further proposes an electronic component manufactured using the micro LED chip mass transfer method described in the first aspect.

[0046] The technical solution of the present invention, when in use, arranges multiple electrode fixing block groups on a driver circuit board in an array and at intervals to obtain multiple target fixing positions. With multiple target fixing positions obtained, when the driver circuit board and the same number of micro LED chips as the target fixing positions on the driver circuit board are placed in the same predetermined solution to form a target solution, a target fixing position can be provided for each micro LED chip, facilitating a mass transfer of micro LED chips. Next, multiple spaced-apart light traps are formed in the predetermined solution. Each light trap can capture a micro LED chip flowing through the target solution while it is flowing and transfer it to a corresponding target fixing position in a target placement posture. The P and N electrodes of the micro LED are electrically conductively connected to the P and N electrode fixing blocks of the corresponding target fixing positions, respectively. This allows the present invention to provide a light trap for each micro LED chip, thereby simultaneously transferring multiple micro LED chips to the target fixing positions on the driver circuit board, achieving the function of batch transfer of micro LED chips and further ensuring the transfer efficiency of the micro LED chips. Finally, array light of a predetermined wavelength is used to irradiate all target fixing positions to photocure all micro LED chips to the corresponding target fixing positions, thereby obtaining an electronic component. The present invention is suitable for micro-electronics applications. During the transfer process of LED chips, the chip transfer equipment will not come into direct contact with the micro LED chips, which enables the massive transfer of micro LED chips, improves the transfer efficiency, and does not cause damage to the micro LED chips. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying any creative work.

[0048] Figure 1 This is a flow chart of an embodiment of a method for mass transfer of micro LED chips provided by the present invention;

[0049] Figure 2 for Figure 1 Flowchart of step S200 in the example;

[0050] Figure 3 for Figure 1 Flowchart of step S400 in the example;

[0051] Figure 4 for Figure 3 Flowchart of step S430 in the example;

[0052] Figure 5 for Figure 1 Flowchart of step S100 in the example;

[0053] Figure 6 for Figure 5 Flowchart of step S130 in the example;

[0054] Figure 7 A flowchart of another embodiment of the method for mass transfer of micro LED chips provided by the present invention;

[0055] Figure 8 A flowchart of another embodiment of the method for mass transfer of micro LED chips provided by the present invention;

[0056] Figure 9 This is a schematic diagram of the structure of a micro LED chip according to an example of the present invention;

[0057] Figure 10 This is a schematic structural diagram of a driver circuit board according to an example of the present invention;

[0058] Figure 11 This is a schematic side structural diagram of a driver circuit board according to an example of the present invention;

[0059] Figure 12 Schematic diagram of the capture and transfer process of a micro LED chip according to an example of the present invention;

[0060] Figure 13 Schematic diagram of the pairing state of the micro LED chip and the driver circuit board according to an example of the present invention;

[0061] Figure 14 Schematic diagram of the structure of the electronic components of the present invention. Description of the drawings:

[0063] 11. N-type layer; 12. Light-emitting layer; 13. P-type layer; 14. P-electrode; 15. N-electrode; 16. Driver circuit board; 17. N-electrode fixing block; 18. P-electrode fixing block; 19. Transparent cover; 20. Chip; 21. Light trap; 22. Three-dimensional light field.

[0064] The purpose, features and advantages of the present invention will be further described with reference to the accompanying drawings and in conjunction with the embodiments. DETAILED DESCRIPTION

[0065] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts shall fall within the scope of protection of the present invention.

[0066] It should be noted that if the embodiments of the present invention involve directional indications (such as up, down, left, right, front, back, etc.), the directional indications are only used to explain the relative position relationship, movement status, etc. between the various components under a certain specific posture. If the specific posture changes, the directional indications will also change accordingly.

[0067] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present invention, the descriptions of "first", "second", etc. are only for descriptive purposes and cannot be understood as indicating or suggesting their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features limited to "first" and "second" may explicitly or implicitly include at least one of such features. In addition, if "and / or" or "and / or" appears in the full text, its meaning includes three parallel solutions. Taking "A and / or B" as an example, it includes solution A, solution B, or solutions that satisfy both A and B. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary technicians in this field to implement. When the combination of technical solutions is mutually contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0068] The present invention provides a method for mass transferring micro LED chips and an electronic component.

[0069] See also Figures 1 to 14 For ease of understanding, the method for mass transfer of micro LED chips includes the following steps:

[0070] S100. Array and space multiple electrode fixing block groups on a driving circuit board to obtain multiple target fixing positions, wherein each electrode fixing block group forms a target fixing position, and the electrode fixing block group includes a P-electrode fixing block 18 and an N-electrode fixing block 17, and the outer periphery of the P-electrode fixing block 18 and the outer periphery of the N-electrode fixing block 17 are coated with a photocurable conductive adhesive.

[0071] In this embodiment, the specific process of obtaining the target fixed position is: first, photoresist is coated on the driving circuit board 16 by photolithography to form multiple installation areas, and a layer of conductive material is laid on the corresponding P-electrode fixing block 18 installation position and N-electrode fixing block 17 installation position in each installation area to form the N-electrode fixing block 17 and the P-electrode fixing block 18 connection position, and conductive material is continued to be laid on the surface of the P-electrode fixing block 18 connection position to form the corresponding P-electrode fixing block 18, thereby obtaining multiple target fixed positions.

[0072] It should be specifically and explicitly stated that in this embodiment, the conductive material exemplified can be, but is not limited to, a metal material that can be deposited on the driver circuit board 16 using conventional deposition techniques. Specifically, the metal material can be gold, silver, copper, platinum, or the like. The exemplified electrode fixing block groups each include a P-electrode fixing block 18 and an N-electrode fixing block 17 , with the P-electrode fixing block 18 being taller than the N-electrode fixing block 17 .

[0073] In this embodiment, multiple electrode fixing block groups are arrayed and spaced apart on the driver circuit board 16 to obtain multiple target fixing positions. This allows the present invention to prepare multiple target fixing positions on the driver circuit board 16 during use, providing a carrier for the subsequent transfer operation of the micro LED chips 20. This enables the present invention to have the premise and guarantee for the batch transfer operation of the micro LED chips 20.

[0074] S200, placing the driver circuit board and multiple micro LED chips in the same preset solution to form a target solution; wherein the number of the micro LED chips 20 is consistent with the number of the target fixing positions, and each micro LED chip 20 corresponds to a target fixing position, and the micro LED chips 20 are suspended in the target solution.

[0075] In this embodiment, the specific process is as follows: first, a predetermined solution that does not react with the micro LED chips 20 is placed in a container. After the predetermined solution is filled, the driver circuit board 16 is placed in the container with its substrate facing downward and completely immersed in the predetermined solution. Next, multiple micro LED chips 20 are placed in the predetermined solution so that the micro LED chips 20 can be suspended in the predetermined solution. After all micro LED chips 20 are immersed and suspended in the predetermined solution, a transparent cover plate 19 is placed at a distance of at least 1 mm above the micro LED chips 20 to ensure that the driver circuit board 16 and the multiple micro LED chips 20 are placed in the same predetermined solution.

[0076] It should be specifically and explicitly stated that in this embodiment, the preset solution is preferably deionized water. The transparent cover plate 19 is preferably a glass plate or a transparent plate made of a material that does not react under photolithography and does not affect the photolithographic effect. The size of the micro LED chip 20 is generally no larger than 100 μm.

[0077] In this embodiment, by placing the driver circuit board 16 and the plurality of micro LED chips 20 in the same predetermined solution, the present invention provides an operating environment for batch transfer of the micro LED chips 20, thereby avoiding the influence of other objects and ensuring transfer efficiency.

[0078] S300, forming a plurality of spaced light traps in the preset solution; wherein the three-dimensional light field 22 is a cavity structure, and the shape of the three-dimensional light field 22 is adapted to the shape of any of the micro LED chips 20.

[0079] In this embodiment, by forming a three-dimensional light field 22, the present invention can facilitate the capture of micro LED chips when in use. By setting the three-dimensional light field 22, the present invention does not directly contact the micro LED chips when capturing the micro LED chips, thereby avoiding damage to the micro LED chips.

[0080] S400. Any of the light traps can capture the microLED chip flowing through the target solution when the target solution is in a flowing state and transfer it to a corresponding target fixing position in a target placement posture, so that the P electrode and N electrode of the micro LED are electrically connected to the P electrode fixing block and the N electrode fixing block of the corresponding target fixing position, respectively.

[0081] In this embodiment, the specific process of step S300 is as follows: under the action of the three-dimensional light field 22, all micro LED chips 20 are captured by optical tweezers, and light traps 21 matching the shapes of the micro LED chips 20 are formed, the current placement posture of each micro LED chip 20 is adjusted to the target placement posture, and the micro LED chips 20 matching them are carried to the corresponding target fixing positions in the target placement posture by each light trap 21, and the light field modulation device is controlled to adjust the scattering force of the three-dimensional light field 22 to release the micro LED chips 20 to the corresponding target fixing positions, so that the P electrode 14 and the N electrode 15 of the micro LED are electrically connected to the P electrode fixing block 18 and the N electrode fixing block 17 of the corresponding target fixing position, respectively.

[0082] In this embodiment, a three-dimensional light field 22 is used to capture all micro LED chips 20 under the action of a three-dimensional light field, and a light trap 21 is formed that matches the shape of each micro LED chip 20. By manipulating the light trap 21 to carry the micro LED chips 20 and transfer them to a corresponding target fixed position, the present invention realizes the function of batch transfer of micro LED chips 20.

[0083] S500: irradiating all the target fixing positions with array light of a preset wavelength to photocure all the micro LED chips to the corresponding target fixing positions to obtain electronic components.

[0084] It should be particularly and clearly stated that, in this embodiment, the array light of the preset wavelength is preferably an array light that can ensure the curing of the photocurable conductive adhesive. It is only applied in this embodiment and will not be described in detail.

[0085] In this embodiment, multiple electrode fixing block groups are arrayed and spaced apart on the driver circuit board 16 to obtain multiple target fixing locations. Once multiple target fixing locations are obtained, when the driver circuit board 16 and the same number of micro LED chips 20 as the target fixing locations on the driver circuit board 16 are placed in the same predetermined solution to form a target solution, a target fixing location can be provided for each micro LED chip 20, facilitating a mass transfer of the micro LED chips 20. Subsequently, multiple spaced apart three-dimensional light fields 22 are formed in the predetermined solution. Each three-dimensional light field 22 can capture a micro LED chip 20 flowing through the target solution while it is flowing and transfer it to a corresponding target fixing location in a targeted placement posture, thereby electrically connecting the P electrode 14 and N electrode 15 of the micro LED to the P electrode fixing block 18 and N electrode fixing block 17 of the corresponding target fixing location, respectively. This allows the present invention to provide a three-dimensional light field 22 for each micro LED chip 20, thereby simultaneously transferring multiple micro LED chips 20 to the target fixing locations on the driver circuit board 16, thereby achieving the function of batch transfer of the micro LED chips 20, further ensuring micro The transfer efficiency of the LED chip 20 is improved, and finally, array light of a preset wavelength is used to irradiate all target fixing positions to photocure all micro LED chips 20 to the corresponding target fixing positions to obtain electronic components. In this way, during the transfer process of the micro LED chip 20, the chip 20 transfer equipment will not directly contact the micro LED chip 20. The massive transfer operation of the micro LED chip improves the transfer efficiency and will not cause damage to the micro LED chip 20.

[0086] In one embodiment, step S200 includes:

[0087] S210: placing the preset solution in a container.

[0088] In this embodiment, the container is made of a material that does not react with a predetermined solution under photolithography.

[0089] S220, placing the driving circuit board into the container with the substrate facing downward; wherein the electrode fixing block groups are all arranged upward.

[0090] In this embodiment, the driver circuit board 16 is placed into the container with the substrate facing downward. This allows the present invention to have a larger operating space when transferring a large number of micro LED chips 20, thereby enabling the transfer of more micro LED chips 20 and ensuring transfer efficiency.

[0091] S230. Place all the micro LED chips into the container according to a preset density; wherein all the micro LED chips are located above the driver circuit board, the preset density is A, the density of the preset solution is B, and 1.5B≤A≤3B.

[0092] In this embodiment, when placing the micro LED chips, the concentration of the predetermined solution in the container can be measured first. Then, a certain number of micro LED chips can be placed in the predetermined solution to ensure that all the micro LED chips are suspended in the predetermined solution. In addition, any suspended micro LED chip will not affect the transfer path of other micro LED chips.

[0093] S240. Place a transparent cover plate in the container so that the transparent cover plate is located above all the micro LED chips, and immerse the driver circuit board and all the micro LED chips in the preset solution to form the target solution; wherein a flow gap is formed between all the micro LED chips 20 and the transparent cover plate 19.

[0094] In this embodiment, a transparent cover plate 19 is placed at a predetermined height above all the micro LED chips 20. This allows the driver circuit board 16 and all the micro LED chips 20 to be immersed in a predetermined solution during use. Furthermore, the three-dimensional light field 22 is uniformly irradiated into the predetermined solution below the transparent cover plate 19. This provides a working space for the mass transfer of micro LED chips 20, avoids interference from the external environment, and improves transfer efficiency.

[0095] In one embodiment, before step S400, the following steps are included:

[0096] S600: Match all the micro LED chips with all the target fixing positions on the driver circuit board one by one;

[0097] In this embodiment, when matching all micro LED chips 20 with all target fixing locations on all driver circuit boards 16, it is important to note that each target fixing location on the driver circuit board 16 only needs to correspond to one micro LED chip 20. During this matching process, the current posture of each target fixing location, that is, the specific shape of each target fixing location and the specific placement of that shape, must be determined.

[0098] It should be particularly and clearly stated that, in this embodiment, the shape of the target fixing position as illustrated should be the three-dimensional shape of the target fixing position and the planar shape projected onto the driving circuit board 16 .

[0099] S700: Modulate the three-dimensional light field into the light trap that matches all the target fixed positions.

[0100] In this embodiment, by modulating the three-dimensional light field, the present invention can ensure that each target fixed position has a corresponding three-dimensional light field when in use, thereby ensuring transfer efficiency.

[0101] It should be particularly and clearly stated that, in this embodiment, the process of modulating the three-dimensional light field is an existing technology, which is only applied in this embodiment without any improvement or design, so it will not be described in detail here.

[0102] In one embodiment, step S400 includes:

[0103] S410. Any of the light traps can capture the microLED chip flowing through the target solution when the target solution is in a flowing state.

[0104] In this embodiment, by forming a light trap 21 that matches the shape of the micro LED chip 20, the present invention enables the light trap 21 to carry the corresponding micro LED chip 20 for rapid movement under the action of a three-dimensional light field, thereby avoiding damage to the micro LED chip 20 and ensuring the transfer efficiency of the micro LED chip 20.

[0105] S420. According to the orientation relationship between the P-electrode fixing block and the N-electrode fixing block of each electrode fixing block group, the current placement posture of each micro LED chip is adjusted to the target placement posture, so that the orientation of the P-electrode and the N-electrode of each microLED can respectively match the orientation of the P-electrode fixing block and the N-electrode fixing block of the corresponding electrode fixing block group.

[0106] In this embodiment, by adjusting the current placement posture of each micro LED chip 20 to the corresponding target placement posture, the present invention does not need to adjust the posture of the micro LED chip 20 again when transferring the micro LED chip 20, thereby ensuring transfer efficiency.

[0107] It should be particularly and clearly stated that, in this embodiment, the specific adjustment method of step S320 is to adjust the micro LED chip 20 to the corresponding target placement posture after determining the target placement posture of the target fixing position and matching the micro LED chip 20 with the corresponding target fixing position.

[0108] S430: Carry and transfer the micro LED chip matched with it to the target fixing position in the target placement posture through each light trap, so that the P electrode and N electrode of the micro LED are electrically connected to the P electrode fixing block and N electrode fixing block of the corresponding target fixing position respectively.

[0109] It should be further clarified that step S430 includes:

[0110] S431, carrying the micro LED chip matched with each light trap to the corresponding target fixing position in the target placement posture;

[0111] S432: Control the light field modulation device to adjust the scattering force of the light trap to release the micro LED chip, so as to transfer the micro LED chip to the corresponding target fixing position, so that the P electrode and N electrode of the micro LED are electrically connected to the P electrode fixing block and N electrode fixing block of the corresponding target fixing position, respectively.

[0112] In this embodiment, each light trap 21 carries the corresponding micro LED chip 20 in a target placement posture to the corresponding target fixing position, and then controls the light field modulation device to adjust the scattering force of the three-dimensional light field 22 to release the micro LED chip 20 to the corresponding target fixing position, so that the P electrode 14 and the N electrode 15 of the micro LED are respectively electrically connected to the P electrode fixing block 18 and the N electrode fixing block 17 of the corresponding target fixing position, thereby realizing the function of mass transfer of the micro LED chip 20. It can not only ensure the transfer efficiency, but also avoid the damage of the micro LED chip 20 caused by collision during the transfer process because the light trap 21 protects the micro LED chip 20 during the transfer process.

[0113] In one embodiment, before step S200, the method further includes:

[0114] A100. An N-type layer, a light-emitting layer, and a P-type layer are sequentially grown on a surface of a deposition substrate.

[0115] It should be particularly and clearly stated that the deposited base structure is made of at least one material selected from sapphire, silicon or silicon carbide, and the surface of the P-type layer facing away from the light-emitting layer is formed with a plurality of arrays of P-electrode connection positions distributed at intervals according to a first preset spacing.

[0116] A200 , coating the surface of each P-electrode connection position with a photoresist material for protection.

[0117] It should be particularly and clearly stated that in this embodiment, the exemplified photoresist material is preferably a material in the prior art that can hinder photolithography. In this embodiment, it is only applied and no improvement is made to the photoresist material, so it will not be described in detail here.

[0118] A300 , using photolithography to remove the P-type layer and the light-emitting layer in areas other than the P-electrode connection position, exposing the N-type layer.

[0119] It should be particularly and clearly stated that a plurality of arrays of N-electrode connection positions are formed in the region where the N-type layer is exposed and are distributed at intervals according to a second preset pitch.

[0120] A400 , removing the photoresist material on the surface of all the P-electrode connection positions.

[0121] It is clear that in this embodiment, the exemplified photoresist material is the material exemplified in step A200 and will not be described in detail here.

[0122] A500 , sequentially coating light-curing conductive adhesive at each of the N-electrode connection positions and the P-electrode connection positions to form the corresponding N-electrode and the P-electrode.

[0123] A600, separating the N-type layer from the preset deposition base structure to obtain an intermediate structure, and cutting the intermediate structure into a plurality of micro LED chips; wherein each of the micro LED chips 20 includes the N-type layer 11, the light-emitting layer 12, the P-type layer 13, a P electrode 14 and an N electrode 15.

[0124] In this embodiment, by sequentially growing an N-type layer 11, a light-emitting layer 12, and a P-type layer 13 on a deposition substrate, and preparing the micro LED chip 20 using steps A200 to A600, the present invention can batch-produce multiple micro LED chips 20, thereby ensuring the preparation efficiency of the micro LED chip 20.

[0125] It can be further clarified that after step A300, the following steps are further included:

[0126] A700. A plurality of N-electrode connection positions each having a first preset area are divided in the region where the N-type layer is exposed; wherein a gap is formed between each of the N-electrode 15 connection positions and the adjacent P-electrode 14 .

[0127] In this embodiment, by setting the connection position of each N-electrode 15 to the first preset area, the present invention can ensure that the size of the connection position of each N-electrode 15 is consistent during specific implementation. Therefore, when performing large-scale operations on micro LED chips 20, there is no need to pay attention to the size of the connection position of the N-electrode 15, which reduces the difficulty of the operation and improves the operation efficiency.

[0128] It should be emphasized again that in the exemplary embodiment, on the side surface of the P-type layer 13 facing away from the light-emitting layer 12, a plurality of areas each having a first preset area are arrayed and divided at intervals according to a first preset spacing to obtain a corresponding number of connection positions of the P-electrodes 14.

[0129] That is, the sizes of the connection positions of the P electrodes 14 in the example are also consistent. Through this setting method, the difficulty of the operation can be further reduced and the operation efficiency can be improved.

[0130] In one embodiment, step S100 includes:

[0131] S110. Photolithography is used to coat photoresist on the driver circuit board to form an array of multiple spaced-apart installation areas; wherein, each of the installation areas is formed with a first installation position and a second installation position that are spaced-apart, the first installation position is used to install the N-electrode fixing block, and the second installation position is used to install the P-electrode fixing block.

[0132] S120 , laying a layer of conductive material on the first mounting position and the second mounting position corresponding to each of the mounting areas to form the N-electrode fixing block and the growth position, respectively.

[0133] S130 , continuing to lay conductive material on the surface of each growth position to form the corresponding P-electrode fixing block, to obtain a plurality of target fixing positions.

[0134] In this embodiment, photoresist is coated on the driver circuit board 16 by photolithography to form multiple installation areas, and a layer of conductive material is laid on the corresponding P-electrode fixing block 18 installation position and N-electrode fixing block 17 installation position in each installation area to form the N-electrode fixing block 17 and the P-electrode fixing block 18 connection position, and conductive material is further laid on the surface of the P-electrode fixing block 18 connection position to form the corresponding P-electrode fixing block 18, so as to obtain multiple target fixing positions, so that the present invention can quickly prepare the P-electrode fixing block 18 and the N-electrode fixing block 17 during specific implementation. In addition, by adopting the method of coating photoresist material, damage to the driver circuit board 16 during the preparation of the electrode fixing block group can also be avoided, thereby improving the yield rate.

[0135] It can be further clarified that step S130 includes:

[0136] S131 , using a photolithography method to coat a photoresist material on the surface of each of the N-electrode fixing blocks for protection.

[0137] In this embodiment, by coating the surface of the N-electrode fixing block 17 with a photoresist material, the N-electrode fixing block 17 is prevented from following the growth of the P-electrode fixing block 18. This allows a height difference to be formed between the N-electrode fixing block 17 and the P-electrode fixing block 18, thereby achieving the function of adapting to the micro LED chip 20.

[0138] S132, continue laying conductive material on the surface of each growth position until the height difference between the P-electrode fixing block and the N-electrode fixing block meets the preset requirement; wherein, the height of the P-electrode fixing block 18 is greater than the height of the N-electrode fixing block 17.

[0139] It should be particularly and clearly stated that, in this embodiment, the preset requirement is that the height of the P-electrode fixing block 18 is greater than the height of the N-electrode fixing block 17 .

[0140] In this embodiment, by continuing to lay conductive material on the surface of the connection position of each P-electrode fixing block 18 until the height difference between the P-electrode fixing block 18 and the N-electrode fixing block 17 meets the preset requirements, the present invention can prepare an electrode fixing block group that is compatible with the micro LED chip 20 when used, ensuring the compatibility of the micro LED chip 20 with the electrode fixing block group on the driving circuit board 16.

[0141] S133 , removing the photoresist material on the surface of all the N-electrode fixing blocks.

[0142] In this embodiment, by coating the surface of the N-electrode fixing blocks 17 with a photoresist material, the present invention can avoid damage to the N-electrode fixing blocks 17 during the process of growing the P-electrode fixing blocks 18 .

[0143] It should be particularly and clearly stated that in this embodiment, the exemplified photoresist material is the same material as the photoresist material described above. This embodiment only applies it and does not improve or design it, so it will not be described in detail here.

[0144] S134 , coating a light-curing conductive adhesive on the surface of each of the N-electrode fixing blocks and each of the P-electrode fixing blocks to obtain a plurality of target fixing positions.

[0145] In this embodiment, by adopting the method of steps S131 to S134, the present invention can quickly prepare multiple target fixed positions. At the same time, in the process of preparing the target fixed positions, since the N-electrode fixing block 17 is first prepared, and after the N-electrode fixing block 17 is prepared, a photoresist material is coated on the surface of the N-electrode fixing block 17 for protection, and then the P-electrode fixing block 18 is prepared, the present invention can avoid damage to the N-electrode fixing block 17 when preparing the target fixed position, thereby ensuring the yield rate.

[0146] Based on the same technical concept, in a second aspect, the present invention further proposes an electronic component manufactured using the micro LED chip mass transfer method described in the first aspect.

[0147] The electronic component provided herein utilizes the mass transfer method for micro LED chips described in the aforementioned embodiment, resolving the technical issues associated with transferring only one or a small number of chips during actual operation due to technical limitations, resulting in low transfer efficiency and potential damage to the chips. Compared to the prior art, the electronic component provided herein achieves the same beneficial effects as the mass transfer method for micro LED chips described in the aforementioned embodiment. Other technical features of the electronic component are the same as those disclosed in the aforementioned embodiment and are not further elaborated upon here.

[0148] The above description is merely an exemplary embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent structural transformation made by utilizing the contents of the present invention's description and drawings under the technical concept of the present invention, or directly / indirectly applied in other related technical fields, is included in the patent protection scope of the present invention.

Claims

1. A method for mass transfer of micro LED chips, characterized in that: The steps include: Multiple electrode fixing block groups are arrayed and spaced apart on a driver circuit board to obtain multiple target fixing positions, wherein each electrode fixing block group forms one target fixing position, and the electrode fixing block group includes a P-electrode fixing block and an N-electrode fixing block. The periphery of the P-electrode fixing block and the periphery of the N-electrode fixing block are both coated with a light-curing conductive adhesive. The height of the P-electrode fixing block is greater than that of the N-electrode fixing block. The P-electrode fixing block and the N-electrode fixing block form an L-shaped micro LED chip. Placing the driver circuit board and the plurality of micro LED chips in the same predetermined solution to form a target solution; wherein the number of the micro LED chips is the same as the number of the target fixing positions, and each micro LED chip is matched with a target fixing position, and the micro LED chips are suspended in the target solution; forming a plurality of spaced light traps in the predetermined solution; wherein the light traps are cavity structures, and the shape of the light traps matches the shape of any of the micro LED chips; Matching all the micro LED chips with all the target fixing positions on the driver circuit board one by one; Modulating the three-dimensional light field into the light trap that cooperates with all the target fixed positions; Any of the light traps can capture the micro LED chip flowing through the target solution when the target solution is in a flowing state; adjusting the current placement posture of each micro LED chip to a target placement posture based on the orientation relationship between the P-electrode fixing block and the N-electrode fixing block of each electrode fixing block group, so that the orientations of the P-electrode and the N-electrode of each micro LED chip can respectively match the orientations of the P-electrode fixing block and the N-electrode fixing block of the corresponding electrode fixing block group; The micro LED chips matched with the micro LED chips are carried and transferred to the target fixing positions in the target placement posture by each light trap, so that the P electrode and the N electrode of the micro LED chip are electrically connected to the P electrode fixing block and the N electrode fixing block of the corresponding target fixing position respectively. All the target fixing positions are irradiated with array light of a preset wavelength to photocure all the micro LED chips to the corresponding target fixing positions to obtain electronic components.

2. The method for mass transfer of micro LED chips according to claim 1, wherein: The step of placing the driving circuit board and the plurality of micro LED chips in the same preset solution to form a target solution includes: placing the predetermined solution in a container; The driving circuit board is placed into the container with the substrate facing downward; wherein the electrode fixing block groups are all arranged upward; Placing all the micro LED chips into the container according to a preset density; wherein all the micro LED chips are located above the driver circuit board, the preset density is A, the density of the preset solution is B, and 1.5B≤A≤3B; A transparent cover is placed in the container so that the transparent cover is located above all the micro LED chips, and the transparent cover immerses the driver circuit board and all the micro LED chips in the preset solution to form the target solution; wherein a flow gap is formed between all the micro LED chips and the transparent cover.

3. The method for mass transfer of micro LED chips according to claim 2, wherein: The step of carrying and transferring the micro LED chip matched with the light trap to the target fixing position in the target placement posture by each light trap, so that the P electrode and the N electrode of the micro LED chip are electrically connected to the P electrode fixing block and the N electrode fixing block of the corresponding target fixing position, respectively, includes: Carrying the micro LED chip matched with each light trap to the corresponding target fixing position in the target placement posture through each light trap; The light field modulation device is controlled to adjust the scattering force of the light trap to release the micro LED chip, so as to transfer the micro LED chip to the corresponding target fixing position, so that the P electrode and the N electrode of the micro LED chip are electrically connected to the P electrode fixing block and the N electrode fixing block of the corresponding target fixing position, respectively.

4. The method for mass transfer of micro LED chips according to any one of claims 1 to 3, wherein: Before the step of placing the driving circuit board and the plurality of micro LED chips in the same predetermined solution, the method further includes: An N-type layer, a light-emitting layer, and a P-type layer are sequentially grown on a surface of a deposition substrate; wherein the deposition substrate is made of at least one of sapphire, silicon, or silicon carbide, and a surface of the P-type layer facing away from the light-emitting layer is formed with a plurality of P-electrode connection locations arranged in an array and spaced apart at a first predetermined interval; Coating a photoresist material on the surface of each P-electrode connection position for protection; The P-type layer and the light-emitting layer are removed from all areas other than the P-electrode connection positions by photolithography to expose the N-type layer; wherein a plurality of N-electrode connection positions are formed in an array in the area where the N-type layer is exposed and are spaced apart at a second preset pitch; removing the photoresist material on the surface of all the P-electrode connection positions; Sequentially coating the N-electrode connection position and the P-electrode connection position with a light-curing conductive adhesive to form the corresponding N-electrode and the P-electrode; The N-type layer is separated from the deposition substrate to obtain an intermediate structure, and the intermediate structure is cut into a plurality of micro LED chips; wherein each micro LED chip includes the N-type layer, the light-emitting layer, the P-type layer, a P electrode, and an N electrode.

5. The method for mass transfer of micro LED chips according to claim 4, wherein: After the step of removing the P-type layer and the light-emitting layer in areas other than the P-electrode connection positions by photolithography to expose the N-type layer, the method further includes: A plurality of N-electrode connection positions each having a first preset area are divided in the region where the N-type layer is exposed; wherein a gap is formed between each of the N-electrode connection positions and the adjacent P-electrode.

6. The method for mass transfer of micro LED chips according to claim 5, wherein: The step of arraying and spacing a plurality of electrode fixing block groups on the driving circuit board to obtain a plurality of target fixing positions includes: Photoresist is coated on the driver circuit board using photolithography to form a plurality of spaced mounting areas in an array; wherein each of the mounting areas is formed with a first mounting position and a second mounting position spaced apart, the first mounting position being used to mount an N-electrode fixing block, and the second mounting position being used to mount a P-electrode fixing block; Laying a layer of conductive material on the first mounting position and the second mounting position corresponding to each of the mounting areas to form the N-electrode fixing block and the growth position respectively; Conductive material is continuously laid on the surface of each growth position to form the corresponding P-electrode fixing block, thereby obtaining a plurality of target fixing positions.

7. The method for mass transfer of micro LED chips according to claim 6, wherein: The step of continuously laying a conductive material on the surface of each growth position to form the corresponding P-electrode fixing block to obtain a plurality of target fixing positions includes: Using a photolithography method, coating a photoresist material on the surface of each of the N-electrode fixing blocks for protection; Continue laying the conductive material on the surface of each growth position until the height difference between the P-electrode fixing block and the N-electrode fixing block meets the preset requirement; removing all photoresist materials from the surface of the N-electrode fixing block; A light-curing conductive adhesive is coated on the surface of each of the N-electrode fixing blocks and each of the P-electrode fixing blocks to obtain a plurality of target fixing positions.

8. An electronic component, characterized in that: The micro LED chip is manufactured using the mass transfer method of any one of claims 1 to 7.

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