Interface passivation material, solar cell, photovoltaic power generation system and electric equipment

Abstract

The invention discloses an interface passivation material, a solar cell, a photovoltaic power generation system and electric equipment, the interface passivation material comprises a first compound with a chemical formula of formula (1) and / or a second compound with a chemical formula of formula (2): # imgabs0 #, Ar is an aromatic group, Q is a functional group containing reactive hydrogen, A + is selected from an ammonium group or a phosphonium group, and B + is selected from an amino group or a phosphonium group. X <-> is selected from any one of halogen ions, halogen-like ions, oxyacid radical ions, fluoroborate radical ions and sulfimide anions. The interface passivation material can be used in a solar cell to passivate interface defects of a light absorption layer, improve carrier transport performance and improve photoelectric conversion efficiency and stability of the solar cell.

Description

Technical Field

[0001] The present application relates to the field of new energy technologies, and particularly to interface passivation materials, solar cells, photovoltaic power generation systems, and electrical equipment. Background Art

[0002] As an important technology in the field of new energy technologies, solar cells have entered many fields such as industry, commerce, agriculture, communication, household appliances, and public facilities from the military and aerospace fields. Perovskite solar cells are one of the most promising and development-potential solar cells at present, with characteristics such as high efficiency, environmental protection, and low cost.

[0003] However, the photoelectric conversion efficiency of perovskite solar cells is currently far lower than the theoretical limit, and at the same time, the stability also fails to meet the usage standards, which is caused by the existence of high-density defects on the perovskite interface. The above statements are only used to provide background technical information related to the present application, and do not necessarily constitute prior art. Summary of the Invention

[0004] The main technical problem to be solved by the present application is to provide an interface passivation material, a solar cell, a photovoltaic power generation system, and an electrical equipment, which can passivate the interface defects of the light absorption layer, and further improve the photoelectric conversion efficiency and stability of the solar cell.

[0005] To solve the above technical problem, a technical solution adopted by the present application is: to provide an interface passivation material, the interface passivation material includes a first compound with the chemical formula of formula (1) and / or a second compound with the chemical formula of formula (2):

[0006]

[0007] Wherein, Ar is an aromatic group; Q is a functional group containing active hydrogen; A + is selected from an ammonium group or a phosphonium group; X - is selected from any one of a halogen ion, a pseudo-halogen ion, an oxyacid root ion, a fluorinated oxyacid root ion, a sulfonimide anion; L1-L5 are selected from an alkyl chain with 0-10 carbon atoms, a halogen-substituted alkyl chain with 0-10 carbon atoms, a heteroatom chain with 0-10 carbon atoms containing heteroatoms, a halogen-substituted heteroatom chain with 0-10 carbon atoms containing heteroatoms, and a single heteroatom, the heteroatoms include one or more of a nitrogen atom, an oxygen atom, and a sulfur atom, wherein an alkyl chain with 0 carbon atoms means that the two groups respectively connected to L1-L5 are directly connected.

[0008] The above interface passivation material can passivate the defects at the interface of the perovskite layer, induce the ordered stacking of the interfaces of adjacent charge transport layers, block the migration of anions in the perovskite, and thus improve the charge transport performance and enhance the photoelectric conversion efficiency and stability of the solar cell device.

[0009] In one embodiment, Q is selected from any one of hydroxyl (-OH), carboxyl (-COOH), mercapto (-SH), amino (-NR’H), and amide (-NHCOR); R’ is selected from any one of a hydrogen atom, an alkyl chain with 1-10 carbon atoms, and a halogen-substituted alkyl chain with 1-10 carbon atoms; R is selected from any one of a hydrogen atom, a halogen atom, an alkyl chain with 1-10 carbon atoms, a halogen-substituted alkyl chain with 1-10 carbon atoms, a heteroatom chain with 1-10 carbon atoms containing heteroatoms, and a halogen-substituted heteroatom chain with 1-10 carbon atoms containing heteroatoms, and the heteroatoms include one or more of nitrogen atoms, oxygen atoms, and sulfur atoms. The functional group (Q) containing active hydrogen can provide active hydrogen to interact with the strongly electronegative group of the adjacent charge transport layer, and at the same time can also induce the ordered stacking of the interfaces of adjacent charge transport layers, thereby improving the charge transport performance.

[0010] In one embodiment, Ar in the first compound includes any one of the following structures Ar1 - Ar15:

[0011]

[0012]

[0013] Among them, Y1 - Y18 are selected from one of oxygen atom (-O-), sulfur atom (-S-), and R’-substituted nitrogen atom (-NR’-); R’ is selected from any one of a hydrogen atom, an alkyl chain with 1-10 carbon atoms, and a halogen-substituted alkyl chain with 1-10 carbon atoms; R1 - R79 are selected from any one of a hydrogen atom, a halogen atom, an alkyl chain with 1-10 carbon atoms, a halogen-substituted alkyl chain with 1-10 carbon atoms, a heteroatom chain with 1-10 carbon atoms containing heteroatoms, and a halogen-substituted heteroatom chain with 1-10 carbon atoms containing heteroatoms, and the heteroatoms include one or more of nitrogen atoms, oxygen atoms, and sulfur atoms;

[0014] Among them, represents the single bond connection site. When the structure of the interface passivation material is of formula (1), the structures Ar1 - Ar15 are connected to L1 through ; and / or

[0015] Ar in the second compound includes any one of the following structures Ar16 - Ar30:

[0016] Among them, the difference between Ar16 and Ar1 is that any one of R1-R5 is substituted; the difference between Ar17 and Ar2 is that any one of R6-R12 is substituted; the difference between Ar18 and Ar3 is that any one of R13-R19 is substituted; the difference between Ar19 and Ar4 is that any one of R20-R28 is substituted; the difference between Ar20 and Ar5 is that any one of R29-R31 is substituted; the difference between Ar21 and Ar6 is that any one of R32-R34 is substituted; the difference between Ar22 and Ar7 is that any one of R35-R37 is substituted; the difference between Ar23 and Ar8 is that any one of R38-R40 is substituted; the difference between Ar24 and Ar9 is that any one of R41-R45 is substituted; the difference between Ar25 and Ar10 is that any one of R46-R50 is substituted; the difference between Ar26 and Ar11 is that any one of R51-R55 is substituted; the difference between Ar27 and Ar12 is that any one of R56-R60 is substituted; the difference between Ar28 and Ar13 is that any one of R61-R69 is substituted; the difference between Ar29 and Ar14 is that any one of R70-R74 is substituted; the difference between Ar30 and Ar15 is that any one of R75-R79 is substituted.

[0017] When the structure of the interface passivation material is of formula (2), the structures Ar16-Ar30 are respectively connected to L4 and L5.

[0018] The aromatic group (Ar) can be enriched at the perovskite layer interface, blocking the migration of anions in the perovskite layer and improving the stability of the perovskite solar cell; at the same time, it can induce the stacking of organic polycyclic molecules in the adjacent charge transport layer, making their arrangement more orderly, thereby improving the charge transport performance.

[0019] In one embodiment, the ammonium group includes -NR' 3 + ; and / or the phosphonium group includes -PR' 3 +, R’ is selected from any one of a hydrogen atom, an alkyl chain with 1-10 carbon atoms, and a halogen-substituted alkyl chain with 1-10 carbon atoms. The ammonium group and the phosphonium group belong to cationic functional groups, so A + can passivate the A-site defects at the perovskite layer interface, stabilize the crystal lattice, and reduce the non-radiative recombination loss of carriers at the interface.

[0020] In one embodiment, the halogen ion includes F - , Cl - , Br - , I - ; the pseudohalogen ion includes any one of CN - , OCN - , SCN - ; the oxyacid root ion includes any one of NO 3 - , ClO 3 - , R”SO 3 - , R”COO - , R”PO 2 (OH) - , where R” is selected from any one of a hydrogen atom, an alkyl chain with 1-10 carbon atoms, a halogen-substituted alkyl chain with 1-10 carbon atoms, Ar1-A15, and an Ar1-Ar15-substituted alkyl chain with 1-10 carbon atoms; the fluorate ion includes any one of BF 4 - , PF 6 - ; and / or the sulfonimide anion includes (CF 3 SO 2 ) 2 N-. The above X- anions can effectively passivate the iodine vacancy defects in the perovskite layer or coordinate with the lead ions with low coordination number, reducing the non-radiative recombination loss of carriers at the interface.

[0021] In one embodiment, the interface passivation material includes any one of the following structures C1-C27:

[0022]

[0023] The above interface passivation materials can passivate the defects at the perovskite layer interface, induce the ordered stacking of adjacent carrier transport layer interfaces, block the migration of anions in the perovskite, and thus improve the carrier transport performance and enhance the photoelectric conversion efficiency and stability of the solar cell device.

[0024] To solve the above technical problems, another technical solution adopted by this application is: to provide a solar cell, including the interface passivation material of any one of the above. The carrier transport performance of this solar cell is improved, and the energy conversion efficiency and stability are enhanced.

[0025] In one embodiment, the solar cell includes a substrate layer, a first electrode, a first transport layer, a light absorption layer, a second transport layer, and a second electrode that are sequentially stacked; the interface passivation material is distributed in one or more of the first transport layer, the light absorption layer, and the second transport layer. Through the above settings, the preparation process of the solar cell can be simplified and the production efficiency can be improved.

[0026] In one embodiment, based on the total mass of the doped base layer, the doping ratio of the interface passivation material is 0.005%-5%, and the doped base layer is any one of the first transport layer, the light absorption layer, and the second transport layer. While not affecting carrier transport, the passivation effect is achieved.

[0027] In one embodiment, the first transport layer is an electron transport layer, the second transport layer is a hole transport layer, or the first transport layer is a hole transport layer and the second transport layer is an electron transport layer. That is, the solar cell can be a normal structure or an inverted structure, expanding the types of solar cells to which the interface passivation material is applied.

[0028] In one embodiment, the solar cell includes a substrate layer, a first electrode, a first transport layer, a light absorption layer, a second transport layer, and a second electrode that are sequentially stacked. The solar cell further includes a passivation layer, and the interface passivation material is distributed in the passivation layer. The passivation layer is located between the first transport layer and the light absorption layer, and / or the passivation layer is located between the second transport layer and the light absorption layer. The passivation layer can passivate the defects of the perovskite interface and improve the carrier transport performance.

[0029] In one embodiment, the thickness of the passivation layer is 0.1-10 nm. Within this thickness range, the passivation effect can be achieved while not affecting carrier transport.

[0030] In one embodiment, the first electrode, the first transport layer, the light absorption layer, the second transport layer, and the second electrode are sequentially arranged from the light incident surface of the substrate layer from bottom to top. The first transport layer is a hole transport layer, the second transport layer is an electron transport layer, and the light absorption layer includes a perovskite material. The passivation layer is located between the electron transport layer and the perovskite layer. The carrier transport performance of this solar cell is improved, and the energy conversion efficiency and stability are enhanced.

[0031] In one embodiment, the material of the first electrode includes any one of fluorine-doped tin oxide, indium tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, and indium-doped zinc oxide; and / or the light absorption layer includes a perovskite material, and the perovskite material includes ABX 3 、A2 CDX 6 Any one of them, where A is any one of inorganic cations, organic cations, and organic-inorganic mixed cations, and can be selected from at least one of methylammonium ions, n-butylammonium ions, and cesium ions; B is any one of inorganic cations, organic cations, and organic-inorganic mixed cations, and can be selected from at least one of lead ions and tin ions; C is any one of inorganic cations, organic cations, and organic-inorganic mixed cations, and can be selected as silver ions; D is any one of inorganic cations, organic cations, and organic-inorganic mixed cations, and can be selected from at least one of bismuth cations, antimony cations, and indium cations; X is any one of inorganic anions, organic anions, and organic-inorganic mixed anions, and can be selected from at least one of bromide ions or iodide ions; and / or the material of the electron transport layer includes [6,6]-phenyl C 61 butyrate (PC 61 BM), [6,6]-phenyl C 71 butyrate (PC 71 BM), fullerene C 60 (C 60 ), fullerene C 70 (C 70 ), tin dioxide (SnO 2 ), zinc oxide (ZnO), perylene diimide (PDI) materials, naphthalene diimide (NDI) materials and their derivatives and materials obtained by doping or passivation thereof; and / or the material of the hole transport layer includes one or more of metal oxide materials, polymer materials, organic small molecule self-assembled molecular materials and their derivatives and materials obtained by doping or passivation thereof; can be selected from nickel oxide (NiO x2 , 1.5≥x2≥1), molybdenum oxide (MoO x3 , 3≥x3≥2.5), tungsten oxide (WO x3 ), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) (PEDOT:PSS), carbazole or triphenylamine materials containing phosphoric acid or carboxylic acid groups; and / or the electrode material of the second electrode includes one or more of organic conductive materials, inorganic conductive materials, and organic-inorganic mixed conductive materials; can be selected from one or more of silver, copper, carbon, gold, aluminum, indium tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, and indium-doped zinc oxide. The energy conversion efficiency and stability of this solar cell are improved.

[0032] In one embodiment, the thickness of the first electrode is 10 - 1000 nm; and / or the band gap of the perovskite layer is 1.20 - 2.30 eV, and the thickness of the perovskite layer is 200 - 1000 nm; and / or the thickness of the electron transport layer is 5 - 100 nm; and / or the thickness of the hole transport layer is 0.5 - 50 nm; and / or the thickness of the second electrode is 10 - 1000 nm. The energy conversion efficiency and stability of the solar cell are improved.

[0033] In one embodiment, the solar cell further includes a blocking layer, and the blocking layer is located between the electron transport layer and the first electrode layer or the second electrode layer; the material of the blocking layer includes one or more of 2,9 - dimethyl - 4,7 - biphenyl - 1,10 - phenanthroline, tin dioxide, zinc oxide, and cerium oxide, wherein the chemical formula of cerium oxide is CeO x1 , and 1.5 ≤ x1 ≤ 2, and the thickness of the blocking layer is 0.5 - 200 nm. The blocking layer is used to block the reaction between the first electrode or the second electrode and the perovskite, and at the same time has the function of energy level regulation, which can reduce the energy and charge loss caused by interfacial charge recombination, thereby improving the energy conversion efficiency of the device.

[0034] To solve the above technical problems, another technical solution adopted by this application is: to provide a photovoltaic power generation system, which is characterized by including the solar cell of any one of the above. The photovoltaic power generation system has at least the same advantages as the solar cell.

[0035] To solve the above technical problems, another technical solution adopted by this application is: to provide an electrical equipment, including the solar cell of any one of the above. The electrical equipment has at least the same advantages as the solar cell.

[0036] The above description is only an overview of the technical solutions of this application. In order to be able to understand the technical means of this application more clearly, it can be implemented according to the content of the specification. And in order to make the above and other purposes, features and advantages of this application more obvious and understandable, the following specifically illustrates the specific embodiments of this application. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the technical solutions in the embodiments of this application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of this application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0038] Figure 1 is a schematic structural diagram of a solar cell according to one or more embodiments;

[0039] Figure 2It is a schematic structural diagram of a solar cell according to one or more embodiments.

[0040] In the drawings:

[0041] 100, battery; 11, first electrode; 13, second electrode; 21, first transport layer; 23, second transport layer; 30, light absorption layer; 40, passivation layer. Detailed implementation manners

[0042] To make the purpose, technical solutions and effects of the present application clearer and more definite, the following will describe in detail the embodiments of the technical solutions of the present application with reference to the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solutions of the present application, and thus are only examples and cannot be used to limit the protection scope of the present application.

[0043] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above accompanying drawing descriptions are intended to cover non-exclusive inclusion.

[0044] In the description of the embodiments of the present application, technical terms such as "first" and "second" are only used to distinguish different objects and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity, specific order or primary-secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the term "multiple" means two or more (including two). Similarly, "multiple groups" means two or more groups (including two groups), and "multiple pieces" means two or more pieces (including two pieces), unless otherwise specifically defined.

[0045] Referring to "embodiments" herein means that the specific features, structures or characteristics described in connection with the embodiments can be included in at least one embodiment of this application. The phrase appears in various places in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art explicitly and implicitly understand that the embodiments described herein can be combined with other embodiments.

[0046] In the description of the embodiments of the present application, the term "and / or" is only a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. In addition, the character " / " in this article generally represents an "or" relationship between the associated objects before and after.

[0047] In this text, quantities, ratios, and other numerical values are presented in a range format. It should be understood that such range formats are for convenience and brevity, and should be understood flexibly, including not only the numerical values explicitly specified as range limits, but also all individual numerical values or sub-ranges covered within the said range, as if each numerical value and sub-range were explicitly specified.

[0048] If there is no special instruction, all steps of this application can be carried out sequentially, randomly, or in parallel, and preferably sequentially. For example, the method includes steps (a) and (b), indicating that the method may include steps (a) and (b) carried out sequentially, or steps (b) and (a) carried out sequentially, or steps (a) and (b) carried out in parallel simultaneously. For example, it is mentioned that the method may further include step (c), indicating that step (c) can be added to the method in any order. For example, the method may include steps (a), (b), and (c), or steps (a), (c), and (b), or steps (c), (a), and (b), etc.

[0049] As an important technology in the field of new energy technology, solar cells have entered many fields such as industry, commerce, agriculture, communication, household appliances, and public facilities from the military and aerospace fields. Perovskite solar cells (PSCs) are one of the most promising and development-potential solar cells at present, with characteristics such as high efficiency, environmental protection, and low cost.

[0050] Please refer to Figure 1 , Figure 1 is a schematic structural diagram of a solar cell according to one or more embodiments. The solar cell 100 includes a base layer (not shown in the figure), a first electrode 11, a first transport layer 21, a light absorption layer 30, a second transport layer 23, and a second electrode 13, which are sequentially stacked; the first transport layer 21 and the second transport layer 23 are respectively one of an electron transport layer and a hole transport layer.

[0051] In some embodiments, the solar cell is a reverse structure, the first transport layer is a hole transport layer, and the second transport layer is an electron transport layer.

[0052] In some embodiments, the solar cell is a normal structure, the first transport layer is an electron transport layer, and the second transport layer is a hole transport layer.

[0053] The base layer is a transparent base layer. The material of the base layer includes glass and / or polymer; optionally, the polymer includes one or more of polyvinyl alcohol (PVA), polyethylene terephthalate (PET), polyimide (PI), polyethylene naphthalate (PEN), and polydimethylsiloxane (PDMS). In some embodiments, the base layer may not be provided either.

[0054] The first electrode is a transparent conductive substrate, which has high conductivity and high visible light transmittance and functions to collect charges. In some embodiments, the material of the first electrode is selected from transparent conductive oxide materials, including any one of fluorine-doped tin oxide (FTO), indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), and indium-doped zinc oxide (IZO). The thickness of the first electrode is 10 - 1000 nm.

[0055] The light absorption layer is used to absorb light and directly convert light energy into electrical energy through the photovoltaic effect or the photochemical effect.

[0056] The light absorption layer includes light-absorbing materials with the function of photovoltaic conversion. The light-absorbing materials absorb photons of sunlight to generate excitation, which excites electrons in the valence band to generate photo-generated electron-hole pairs. The binding energy of the electron-hole pairs is small and they are easily dissociated under the action of the built-in electric field, and then separated into free electrons and free holes, that is, carriers.

[0057] In some embodiments, the material of the light absorption layer includes but is not limited to perovskite. The chemical composition of perovskite includes ABX 3 or A 2 CDX 6 wherein A is any one of inorganic cations, organic cations, and organic-inorganic hybrid cations, and can be methylammonium ion (CH 3 NH 3 + , MA + ), n-butylammonium ion (HC(NH 2 )) 2 + , FA + ), cesium ion (Cs + ) and at least one of them; B is any one of inorganic cations, organic cations, and organic-inorganic hybrid cations, and can be lead ion (Pb 2+ ), tin ion (Sn 2+ ) and at least one of them; C is any one of inorganic cations, organic cations, and organic-inorganic hybrid cations, and can be silver ion (Ag + ); D is any one of inorganic cations, organic cations, and organic-inorganic hybrid cations, and can be bismuth cation (Bi 3+ ), antimony cation (Sb 3+ ), indium cation (In 3+ ) and at least one of them; X is any one of inorganic anions, organic anions, and organic-inorganic hybrid anions, and can be bromide ion (Br - ) or iodide ion (I -) at least one of them. The band gap of the perovskite layer is 1.20 - 2.30 eV, and the thickness of the perovskite layer is 200 - 1000 nm.

[0058] The function of the electron transport layer is to efficiently transport the free electrons generated by the perovskite layer, effectively block the passage of free holes, and form an ohmic contact at the interface with the perovskite active layer.

[0059] In some embodiments, the material of the electron transport layer is at least one of the following materials, their derivatives, and the materials obtained by doping or passivating them. The electron transport materials include, but are not limited to, at least one of imide compounds, quinone compounds, fullerenes and their derivatives, metal oxides, semiconductor material oxides, titanates, and fluorides. The imide compounds include at least one of perylene diimide and its derivatives, naphthalene diimide and its derivatives, phthalimide, succinimide, N-bromosuccinimide, glutarimide, or maleimide. The quinone compounds include at least one of benzoquinone, naphthoquinone, phenanthrenequinone, or anthraquinone. The fullerenes and their derivatives include [6,6]-phenyl C 61 methyl butyrate (PC 61 BM), [6,6]-phenyl C 71 -methyl butyrate (PC 71 BM), fullerene C 60 (C 60 ), fullerene C 70 (C 70 ) at least one of them. The metal elements in the metal oxides include at least one of magnesium (Mg), cadmium (Cd), zinc (Zn), indium (In), lead (Pb), tungsten (W), antimony (Sb), bismuth (Bi), mercury (Hg), titanium (Ti), silver (Ag), manganese (Mn), iron (Fe), vanadium (V), tin (Sn), zirconium (Zr), strontium (Sr), gallium (Ga), and chromium (Cr). The semiconductor material oxides include silicon oxide. The titanates include at least one of strontium titanate and calcium titanate. The fluorides include at least one of lithium fluoride and calcium fluoride. The thickness of the electron transport layer is 5 - 100 nm.

[0060] The hole transport layer is used to transport the free holes to the corresponding electrode and prevent the free holes from diffusing in the opposite direction.

[0061] In some embodiments, the materials of the hole transport layer include one or more of metal oxide materials, polymer materials, organic small molecule self-assembled molecular materials, their derivatives, and the materials obtained by doping or passivating them. For example, but not limited to, metal oxide materials such as nickel oxide (NiO x2 , 1.5 ≥ x2 ≥ 1), molybdenum oxide (MoO x3 , 3 ≥ x3 ≥ 2.5), tungsten oxide (WO x4, (3 ≥ x4 ≥ 2.5); polymer materials such as poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) (PEDOT:PSS); organic small molecule self-assembled molecular materials such as carbazole or triphenylamine materials containing phosphoric acid or carboxylic acid groups, etc. The thickness of the hole transport layer is 0.5 - 50 nm.

[0062] The second electrode functions to collect free charges. In some embodiments, the electrode material of the second electrode includes one or more of organic conductive materials, inorganic conductive materials, and organic-inorganic hybrid conductive materials, including silver (Ag), copper (Cu), carbon (C), gold (Au), aluminum (Al), indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), indium-doped zinc oxide (IZO), etc. The thickness of the second electrode is 10 - 1000 nm.

[0063] In one embodiment, the solar cell provided by the present application further includes a blocking layer, which is located between the electron transport layer and the first electrode layer, or the blocking layer is located between the electron transport layer and the second electrode layer. The blocking layer is used to block the reaction between the first electrode or the second electrode and the perovskite, improve the reduction of device efficiency caused by the Schottky contact between the electron transport layer and the electrode, and at the same time has the function of energy level regulation. The valence band energy level of the blocking layer is relatively low, far lower than the valence band energy level of the perovskite layer, and can effectively prevent the injection of holes. Therefore, it can reduce the energy and charge loss caused by interfacial charge recombination, thereby improving the energy conversion efficiency of the device.

[0064] Furthermore, the material of the blocking layer includes one or more of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), tin dioxide (SnO 2 ), zinc oxide (ZnO), cerium oxide (CeO x1 , 1.5 ≤ x1 ≤ 2), and the thickness of the blocking layer is 0.5 - 20 nm.

[0065] At present, the highest efficiency value achieved by single-junction perovskite solar cells is still far lower than the theoretical Shockley-Queisser limit efficiency of 30.5%, indicating that there is still considerable room for improvement. At the same time, the stability of perovskite solar cells under various environmental conditions still fails to meet the commercial use standards. The photoelectric conversion efficiency and stability of perovskite solar cells are closely related to the nonradiative recombination (NRR) process of carriers inside and at the interfaces of the devices. Reducing NRR losses can effectively improve the photoelectric conversion efficiency and stability. In-depth research shows that NRR in perovskite solar cells is mainly due to the existence of various types of defects on the perovskite interfaces, including mainly shallow-level defects and deep-level defects. Among them, deep-level defects can capture electrons or holes, causing them to be annihilated by carriers with opposite charges, resulting in the loss of charge carriers in the perovskite material; shallow-level defects can migrate to the interface under the action of an electric field, affecting the photovoltaic performance of perovskite solar cells.

[0066] It has been found that by introducing a suitable material at the perovskite interface for surface passivation to repair the defects at the interface, the photoelectric conversion efficiency and stability of perovskite solar cells can be effectively improved.

[0067] Based on this, the present application provides an interface passivation material, a solar cell, and an electrical device to improve the perovskite interface defects, achieve interface passivation, reduce the nonradiative recombination losses caused by carrier recombination at the interface, improve the carrier transport performance, and improve the photoelectric conversion efficiency of the solar cell.

[0068] According to some embodiments of the present application, the interface passivation material includes a first compound with the chemical formula of formula (1) and / or a second compound with the chemical formula of formula (2);

[0069]

[0070] wherein, Ar is an aromatic group; Q is a functional group containing active hydrogen; A + is selected from an ammonium group or a phosphonium group; X - is selected from any one of a halide ion, a pseudohalide ion, an oxyacid root ion, a fluoroacid root ion, and a sulfonimide anion; L1-L5 are selected from an alkyl chain with 0-10 carbon atoms, a halogen-substituted alkyl chain with 0-10 carbon atoms, a heteroatom chain with 0-10 carbon atoms containing heteroatoms, a halogen-substituted heteroatom chain with 0-10 carbon atoms containing heteroatoms, and a single heteroatom, and the heteroatoms include one or more of a nitrogen atom, an oxygen atom, and a sulfur atom, wherein an alkyl chain with 0 carbon atoms means that the two groups respectively connected to L are directly connected.

[0071] The above-mentioned interfacial passivation material can passivate the defects at the interface of the perovskite layer, reducing the non-radiative recombination loss of carriers at the interface; secondly, it can induce the ordered stacking of adjacent carrier transport layer interfaces, improving the carrier transport performance; thirdly, it can block the migration of anions in the perovskite, improving the defects caused by ion migration in the solar cell. Therefore, this interfacial passivation material can improve the photoelectric conversion efficiency and stability of solar cell devices.

[0072] In one embodiment, Q in the above-mentioned interfacial passivation material is selected from any one of hydroxyl (-OH), carboxyl (-COOH), mercapto (-SH), amino (-NR’H), and amide (-NHCOR); R’ is selected from any one of a hydrogen atom, an alkyl chain with 1-10 carbon atoms, and a halogen-substituted alkyl chain with 1-10 carbon atoms; R is selected from any one of a hydrogen atom, a halogen atom, an alkyl chain with 1-10 carbon atoms, a halogen-substituted alkyl chain with 1-10 carbon atoms, a heteroatom chain with 1-10 carbon atoms containing heteroatoms, and a halogen-substituted heteroatom chain with 1-10 carbon atoms containing heteroatoms, and the heteroatoms include one or more of nitrogen atoms, oxygen atoms, and sulfur atoms.

[0073] Q is a functional group containing active hydrogen, and active hydrogen refers to a hydrogen atom that is easy to detach from an atom, form a free radical reaction, or participate in other chemical reactions. The hydrogen atom in hydroxyl (-OH) can easily detach from the hydroxyl through proton transfer to form a free hydrogen ion (H + ), in addition, the oxygen atom in the hydroxyl has a high electronegativity and strong electrophilicity, which also promotes the detachment of hydrogen ions; the hydroxyl hydrogen in carboxyl (-COOH) is more easily dissociated than the hydroxyl hydrogen in alcohol, showing weak acidity; the sulfur atom in mercapto (-SH) also has a relatively high electronegativity, which can promote the detachment of hydrogen ions; the nitrogen atom in amino (-NR’H) also has a relatively high electronegativity, which can promote the detachment of hydrogen ions; in amide (-NHCOR), the π electrons in the carbonyl group and the p orbitals occupied by the lone electron pairs on the nitrogen atom form a p-π conjugation, resulting in a decrease in the electron cloud density on the nitrogen atom and also an increase in the polarity of the N-H bond, making the hydrogen atom active.

[0074] The functional group containing active hydrogen (Q) can provide active hydrogen to interact with the strongly electronegative groups of the adjacent carrier transport layer, such as oxygen atoms (-O-) with lone pairs of electrons, fluorine atoms (-F-), etc., and can form hydrogen bonds or other strong interactions. At the same time, it can also induce the ordered stacking of adjacent carrier transport layer interfaces, thereby improving the carrier transport performance and the performance of solar cell devices.

[0075] In one embodiment, in the above-mentioned interfacial passivation material, Ar in the first compound includes any one of the following structures Ar1-Ar15:

[0076]

[0077]

[0078] Among them, Y1 - Y18 is selected from one of an oxygen atom (-O-), a sulfur atom (-S-), and an R'-substituted nitrogen atom (-NR'-); R' is selected from any one of a hydrogen atom, an alkyl chain with 1 - 10 carbon atoms, and a halogen-substituted alkyl chain with 1 - 10 carbon atoms; R1 - R79 is selected from any one of a hydrogen atom, a halogen atom, an alkyl chain with 1 - 10 carbon atoms, a halogen-substituted alkyl chain with 1 - 10 carbon atoms, a heteroatom chain with 1 - 10 carbon atoms containing heteroatoms, and a halogen-substituted heteroatom chain with 1 - 10 carbon atoms containing heteroatoms, and the heteroatoms include one or more of a nitrogen atom, an oxygen atom, and a sulfur atom;

[0079] Among them, represents a single-bond connection site. When the structure of the interface passivation material is the structure Ar1 - Ar15 is connected to the L1 through ; and / or

[0080] Ar in the second compound includes any one of the following structures Ar16 - Ar30,

[0081] Among them, the difference between Ar16 and Ar1 is that any one of R1 - R5 is replaced by ; the difference between Ar17 and Ar2 is that any one of R6 - R12 is replaced by ; the difference between Ar18 and Ar3 is that any one of R13 - R19 is replaced by ; the difference between Ar19 and Ar4 is that any one of R20 - R28 is replaced by ; the difference between Ar20 and Ar5 is that any one of R29 - R31 is replaced by ; the difference between Ar21 and Ar6 is that any one of R32 - R34 is replaced by ; the difference between Ar22 and Ar7 is that any one of R35 - R37 is replaced by ; the difference between Ar23 and Ar8 is that any one of R38 - R40 is replaced by ; the difference between Ar24 and Ar9 is that any one of R41 - R45 is replaced by ; the difference between Ar25 and Ar10 is that any one of R46 - R50 is replaced by ; the difference between Ar26 and Ar11 is that any one of R51 - R55 is replaced by Substituted; Ar27 is different from Ar12 in that any one of R56 - R60 is substituted; Ar28 is different from Ar13 in that any one of R61 - R69 is substituted; Ar29 is different from Ar14 in that any one of R70 - R74 is substituted; Ar30 is different from Ar15 in that any one of R75 - R79 is substituted.

[0082] When the structure of the interface passivation material is , the structures Ar16 - Ar30 are respectively connected to L4 and L5 through respectively.

[0083] Y1 - Y18 can be the same group or different groups; R1 - R79 can be the same group or different groups.

[0084] The aromatic group (Ar) can be enriched at the perovskite layer interface, blocking the migration of anions in the perovskite layer and improving the stability of the perovskite solar cell; at the same time, it can induce the stacking of organic polycyclic aromatic molecules in the adjacent charge transport layer through π - π interaction, making their arrangement more orderly, thereby improving the charge transport performance and the performance of the solar cell device.

[0085] In one embodiment, in the above - mentioned interface passivation material, A + is selected from an ammonium group or a phosphonium group. The ammonium group includes - NR’ 3+ ; the phosphonium group includes - PR’ 3+ , and R’ is selected from any one of a hydrogen atom, an alkyl chain with 1 - 10 carbon atoms, and a halogen - substituted alkyl chain with 1 - 10 carbon atoms.

[0086] Since the ammonium group and the phosphonium group belong to cationic functional groups, A + can passivate the A - site defects in the perovskite layer ABX 3 or A 2 CDX 6 interface, stabilize the lattice, reduce the non - radiative recombination loss of carriers at the interface, and improve the performance of the solar cell device.

[0087] In one embodiment, in the above - mentioned interface passivation material, X− is selected from any one of halogen ions, pseudohalogen ions, oxyacid anions, fluoroacid anions, and sulfonylimide anions. Among them, the halogen ions include fluoride ions (F−), chloride ions (Cl−), bromide ions (Br - ), and iodide ions (I - ); the pseudohalogen ions include cyanide ions (CN - ), cyanate ions (OCN- ), thiocyanate ion (SCN - ) any one of; fluoride-containing ions include tetrafluoroborate ions (BF 4 - ), hexafluorophosphate ion (PF 6 - ) any one; sulfonyl imide anion includes bis(trifluoromethylsulfonyl imide) anion [(CF 3 SO 2 ) 2 N - ]. Oxygen-containing acid ions include NO 3 - , ClO 3 - 、R”SO 3 - 、R”COO - 、R”PO 2 (OH) - Any one of, wherein R "is selected from any one of a hydrogen atom, an alkyl chain having 1-10 carbon atoms, an alkyl chain having 1-10 carbon atoms substituted by a halogen, Ar1-A15, and an alkyl chain having 1-10 carbon atoms substituted by Ar1-Ar15. Specifically, the oxygen-containing acid radical ion includes any one of a p-toluenesulfonate ion, a trifluoromethanesulfonate ion, a fluorosulfonate ion, and a methylphosphate ion.

[0088] X- anions can effectively passivate iodine vacancy defects in the perovskite layer or coordinate with low-coordinated lead ions to reduce the non-radiative recombination loss of carriers at the interface. For example, Cl- can improve the crystallization and morphology of the perovskite layer and improve the photoelectric properties (carrier lifetime and extension length, etc.); I - It can fill the halide vacancies at the grain boundaries of the perovskite layer, thereby passivating the defects and reducing the non-radiative recombination of carriers; SCN - It can passivate cation defects and grain boundaries, and Pb 2+ It forms a crystal structure that is more stable and stronger than halide groups, while also enhancing water resistance, light absorption and reducing leakage current.

[0089] In one embodiment, the interface passivation material includes any one of the following structures C1-C27:

[0090]

[0091]

[0092] In one embodiment, the solar cell provided in the present application includes the interface passivation material of each of the above embodiments.

[0093] In one embodiment, the interfacial passivation material may be distributed in one or more of the first transport layer, the light absorption layer, and the second transport layer.

[0094] The interfacial passivation material being distributed in one or more of the first transport layer, the light absorption layer, and the second transport layer means that the interfacial passivation material is uniformly blended with the substances in the above layers to prepare the thin film of this layer. This can simplify the preparation process of the solar cell and improve production efficiency.

[0095] Wherein, based on the total mass of the doped base layer, the doping ratio of the interfacial passivation material is 0.005% - 5%, such as 0.005%, 0.01%, 0.05%, 0.1%, 0.3%, 0.5%, 0.8%, 1%, 1.5%, 2%, 3%, 4%, 5%. The doped base layer is any one of the first transport layer, the light absorption layer, and the second transport layer. That is to say, when doping into a certain layer, the doping amount is calculated based on that layer. For example, when the passivation material is doped into the first transport layer, its doping weight ratio is 0.5% - 1% of the total mass of the first transport layer.

[0096] In one embodiment, the interfacial passivation material may also form a separate passivation layer. Specifically, the solar cell further includes a passivation layer, the interfacial passivation material is distributed in the passivation layer, and the passivation layer is located between the first transport layer and the light absorption layer, and / or the passivation layer is located between the second transport layer and the light absorption layer.

[0097] The passivation layer can be prepared at the interface between the hole transport layer and the light absorption layer, or at the interface between the electron transport layer and the light absorption layer. The passivation layer can passivate the defects at the perovskite interface, thereby reducing the non-radiative recombination loss of carriers at the interface and improving the carrier transport performance.

[0098] The passivation layer can be prepared by methods such as spin coating, spray coating, slit coating, chemical vapor deposition, etc.

[0099] Wherein, the thickness of the passivation layer is 0.1 - 10 nm. Increasing the thickness of the passivation layer can enhance the passivation effect, but due to the low conductivity of the interfacial passivation material, a passivation layer with too large a thickness will cause limited current transmission. Therefore, when the thickness of the passivation layer is in the range of 0.1 - 10 nm, it can achieve the passivation effect and reduce the non-radiative recombination loss of carriers without affecting current transmission.

[0100] Please refer to Figure 2 , Figure 2Schematic structural diagram of a solar cell according to one or more embodiments. In one embodiment, taking a p-i-n perovskite solar cell as an example, the first electrode 11, the first transport layer 21, the light absorption layer 30, the second transport layer 23, and the second electrode 13 of the solar cell 100 are sequentially arranged from bottom to top on the substrate layer. The first transport layer 21 is a hole transport layer, the second transport layer 23 is an electron transport layer, the light absorption layer 30 is a perovskite layer, the passivation layer 40 is located between the electron transport layer and the perovskite layer, and / or the passivation layer 40 is located between the perovskite layer and the hole transport layer.

[0101] The preparation of a p-i-n structured perovskite solar cell includes the following steps:

[0102] S1: Etch and clean the first electrode substrate, and dry it for standby.

[0103] S2: Prepare the hole transport layer on the clean first electrode substrate, and keep it for standby.

[0104] S3: Prepare the perovskite light absorption layer on the hole transport layer, and keep it for standby.

[0105] S4: Prepare the electron transport layer and the blocking layer on the perovskite light absorption layer, and keep it for standby.

[0106] S5: Prepare the second electrode layer on the blocking layer, and perform edge cleaning and testing.

[0107] In one embodiment, the interfacial passivation material is doped in one or more of the hole transport layer, the perovskite layer, and the electron transport layer. The doping method is to mix the interfacial passivation material with the precursor solution of each layer.

[0108] In one embodiment, the interfacial passivation material forms a separate layer and is prepared at the interface between the hole transport layer and the perovskite layer; and / or at the interface between the perovskite layer and the electron transport layer. The preparation method can be selected but is not limited to methods such as spin coating, spray coating, slot coating, chemical vapor deposition, etc.

[0109] According to some embodiments of the present application, the present application also provides a photovoltaic power generation system, which includes the solar cell of any one of the above.

[0110] A photovoltaic power generation system refers to a power generation system that directly converts solar radiant energy into electrical energy using the photovoltaic effect, and is divided into a stand-alone photovoltaic power generation system and a grid-connected photovoltaic power generation system. The stand-alone photovoltaic power generation system consists of a solar photovoltaic array composed of photovoltaic modules, a battery pack, a charge controller, a power electronic converter (inverter), a load, etc. The grid-connected photovoltaic power generation system consists of a photovoltaic array, a high-frequency DC / DC boost circuit, a power electronic converter (inverter), and a system monitoring part.

[0111] The photovoltaic power generation system includes a plurality of electrically connected photovoltaic modules, and the plurality refers to a quantity of two or more integers.

[0112] According to some embodiments of the present application, the present application also provides an electrical device, which includes the solar cell provided by the above solution, and the solar cell is used to provide electrical energy for the electrical device.

[0113] The electrical device is a common device including the solar cell of the present application, such as in the fields of communication, transportation, industry and agriculture, lighting, etc. The electrical device may include, for example, satellites, communication devices, traffic lights, lighthouses, wireless phone booths, monitoring devices in the oil drilling field, power systems, camping lights, electric vehicles, electronic device chargers, etc.

[0114] The power supply mode of the electrical device can be single power supply by the solar cell, or combined power supply by the solar cell and the energy storage battery, that is, the electrical device is installed with both a solar cell and an energy storage battery. The energy storage battery is not limited to primary batteries and secondary batteries, such as but not limited to lithium-ion secondary batteries, sodium-ion secondary batteries, etc.

[0115] The beneficial effects of the present application are further described below in conjunction with embodiments.

[0116] In order to make the technical problems, technical solutions and beneficial effects solved by the embodiments of the present application clearer, the following will be further described in detail in conjunction with the embodiments and the drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and in no way limits the present application and its application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of protection of the present application.

[0117] I. Preparation of the interface passivation material

[0118] (1) Synthesis of C1:

[0119] Dissolve 2-amino-3-phenylpropanol (10 mmol) in ethanol (50 mL), then lower the solution to 0 °C, and drip aqueous hydrochloric acid solution (mass fraction 36%, 2.5 mL) into the above solution, and stir for 3 h. After removing the solvent, recrystallize in diethyl ether to obtain compound C1, with a yield of about 67%. Under the condition of an external magnetic field strength of 400 MHz and a solvent of deuterated dimethyl sulfoxide (DMSO-d 6 )), the nuclear magnetic resonance hydrogen spectrum was measured ( 11H NMR), the test results were as follows: chemical shift δ = 8.34 (s, 3H); δ = 7.22 - 7.18 (m, 5H); δ = 4.26 - 4.18 (m, 3H); δ = 3.98 - 3.94 (m, 1H); δ = 3.33 - 3.26 (m, 2H). Among them, s represents a singlet and m represents a multiplet.

[0120] (2) Synthesis of C2:

[0121] Dissolve 2 - amino - 1 - phenylethanol (10 mmol) in ethanol (50 mL), then cool the solution to 0 °C. Aqueous hydroiodic acid solution (mass fraction 55% - 57%, 1.5 mL) was added dropwise to the above solution, and the mixture was stirred for 5 h. After removing the solvent, recrystallization was carried out in diethyl ether to obtain compound C2 with a yield of approximately 54%. Under the condition of an external magnetic field strength of 400 MHz and a solvent of deuterated dimethyl sulfoxide (DMSO - d 6 ), the proton nuclear magnetic resonance spectrum ( 1 1H NMR) was measured, and the test results were as follows: chemical shift δ = 8.31 (s, 3H); δ = 7.32 - 7.25 (m, 5H); δ = 5.53 - 5.48 (m, 1H); δ = 5.23 (s, 1H); δ = 3.86 - 3.84 (m, 2H).

[0122] (3) Synthesis of C3:

[0123] Dissolve 2 - amino - 3 - phenylpropanol (10 mmol) in ethanol (50 mL), then cool the solution to 0 °C. Glacial acetic acid (10 mmol) was added dropwise to the above solution, and the mixture was stirred for 5 h. After removing the solvent, recrystallization was carried out in diethyl ether to obtain compound C3 with a yield of approximately 91%. Under the condition of an external magnetic field strength of 400 MHz and a solvent of deuterated dimethyl sulfoxide (DMSO - d 6 ), the proton nuclear magnetic resonance spectrum ( 1 1H NMR) was measured, and the test results were as follows: chemical shift δ = 8.33 (s, 3H); δ = 7.23 - 7.19 (m, 5H); δ = 4.25 - 4.16 (m, 3H); δ = 3.97 - 3.93 (m, 1H); δ = 3.34 - 3.25 (m, 2H); 2.21 (s, 3H).

[0124] (4) Synthesis of C4: The synthesis route was the same as that of C2, except that 2 - amino - 1 - phenylethanol was replaced by 2 - dimethylamino - 3 - phenylpropanoic acid. After the reaction and purification, compound C4 was obtained with a yield of approximately 51%. Measured 1 1H NMR (400 MHz, DMSO - d 6)δ = 12.72 (s, 1H); δ = 8.10 (s, 1H); δ = 7.22 - 7.18 (m, 5H); δ = 4.83 - 4.78 (m, 1H); δ = 3.37 - 3.31 (m, 2H); δ = 2.86 (s, 6H).

[0125] (5) Synthesis of C5: The synthesis route is the same as that of C2, except that 2 - amino - 1 - phenylethanol is replaced by 2 - amino - 3 - (4 - fluorophenyl) propanol. After reaction and purification, compound C5 is obtained with a yield of about 35%. Measured 1 H NMR (400 MHz, DMSO - d 6 )δ = 8.31 (s, 3H); δ = 7.17 - 7.15 (m, 4H); δ = 4.33 - 4.28 (m, 2H); δ = 4.24 (s, 1H); δ = 3.99 - 3.95 (m, 1H); δ = 3.27 - 3.21 (m, 2H).

[0126] (6) Synthesis of C6: Dissolve 2 - amino - 3 - (4 - fluorophenyl) propanol (10 mmol) and anhydrous potassium carbonate (30 mmol) in 20 mL of N,N - dimethylformamide. Dropwise add methyl iodide (35 mmol). After stirring at 70 °C for 12 h, filter and pour the supernatant into 200 mL of ether. Filter to obtain compound C6 with a yield of about 75%. Measured 1 H NMR (400 MHz, DMSO - d 6 )δ = 7.19 - 7.15 (m, 4H); δ = 4.25 (s, 1H); δ = 4.04 - 3.96 (m, 3H); δ = 3.30 (s, 9H); δ = 3.07 - 3.01 (m, 2H).

[0127] (7) Synthesis of C7: The synthesis route is the same as that of C5, except that the aqueous solution of hydroiodic acid (mass fraction 55% - 57%, 1.5 mL) is replaced by the aqueous solution of fluoboric acid (mass fraction 50%, 2 mL). After reaction and purification, compound C7 is obtained with a yield of about 28%. Measured 1 H NMR (400 MHz, DMSO - d 6 )δ = 8.31 (s, 3H); δ = 7.17 - 7.15 (m, 4H); δ = 4.34 - 4.28 (m, 2H); δ = 4.23 (s, 1H); δ = 3.98 - 3.95 (m, 1H); δ = 3.26 - 3.21 (m, 2H).

[0128] (8) Synthesis of C8: The synthesis route is the same as that of C2, except that 2-amino-1-phenylethanol is replaced by 2-amino-3-(3-trifluoromethylphenyl)propionic acid. After reaction and purification, compound C8 is obtained with a yield of about 55%. Measured 1 H NMR(400MHz,DMSO-d 6 )δ=12.72(s,1H);δ=8.31(s,3H);δ=7.47-7.42(m,3H);δ=7.21(s,1H);δ=4.83-4.78(m,1H);δ=3.67-3.61(m,2H).

[0129] (9) Synthesis of C9: The synthesis route is the same as that of C2, except that 2-amino-1-phenylethanol is replaced by 3-(dimethylamino)-1-(2-thienyl)-1-propanol. After reaction and purification, compound C9 is obtained with a yield of about 33%. Measured 1 HNMR(400MHz,DMSO-d 6 )δ=8.30(s,1H);δ=7.53(s,1H);δ=7.06-7.01(m,2H);δ=5.18(s,1H);δ=4.79-4.77(m,1H);δ=3.24-3.20(m,2H);δ=2.86(s,6H);δ=2.14-2.10(m,2H).

[0130] (10) Synthesis of C10: The synthesis route is the same as that of C2, except that 2-amino-3-(4-fluorophenyl)propanol is replaced by (S)-3-(dimethylamino)-1-(2-thienyl)-1-propanol. After reaction and purification, compound C10 is obtained with a yield of about 31%. Measured 1 H NMR(400MHz,DMSO-d 6 )δ=8.30(s,1H);δ=7.53(s,1H);δ=7.06-7.01(m,2H);δ=5.20(s,1H);δ=4.79-4.77(m,1H);δ=3.25-3.21(m,2H);δ=2.86(s,6H);δ=2.14-2.10(m,2H).

[0131] (11) Synthesis of C11: The synthesis route is the same as that of C6, except that 2-amino-1-phenylethanol is replaced by (S)-3-(dimethylamino)-1-(2-thienyl)-1-propanol, the amount of potassium carbonate is reduced to 5 mmol, and the amount of methyl iodide is reduced to 12 mmol. After reaction and purification, compound C11 is obtained with a yield of about 71%. Measured 1 H NMR(400MHz,DMSO-d 6) δ = 7.53 (s, 1H); δ = 7.06 - 7.01 (m, 2H); δ = 5.32 (s, 1H); δ = 4.79 - 4.77 (m, 1H); δ = 3.24 - 3.20 (m, 2H); δ = 3.30 (s, 9H); δ = 2.14 - 2.10 (m, 2H).

[0132] (12) Synthesis of C12: The synthetic route is the same as that of C2, except that 2-amino-1-phenylethanol is replaced by 3-(dimethylamino)-1-(2-thienyl)-1-propanol. After reaction and purification, compound C12 is obtained with a yield of about 43%. Measured 1 H NMR (400 MHz, DMSO-d 6 ) δ = 8.30 (s, 2H); δ = 7.53 (s, 1H); δ = 7.06 - 7.01 (m, 2H); δ = 4.79 - 4.77 (m, 1H); δ = 3.24 - 3.20 (m, 2H); δ = 2.86 (s, 3H); δ = 2.14 - 2.10 (m, 2H).

[0133] (13) Synthesis of C13: The synthetic route is the same as that of C2, except that 2-amino-1-phenylethanol is replaced by 4-amino-3-(5-chloro-2-thienyl)butyric acid. After reaction and purification, compound C13 is obtained with a yield of about 61%. Measured 1 HNMR (400 MHz, DMSO-d 6 ) δ = 12.51 (s, 1H); δ = 8.30 (s, 3H); δ = 6.67 - 6.65 (m, 2H); δ = 3.73 - 3.58 (m, 3H); δ = 2.61 - 2.57 (m, 2H).

[0134] (14) Synthesis of C14: The synthetic route is the same as that of C2, except that 2-amino-1-phenylethanol is replaced by 2-amino-3-(2-thienyl)propionic acid. After reaction and purification, compound C14 is obtained with a yield of about 58%. Measured 1 H NMR (400 MHz, DMSO-d 6 ) δ = 12.72 (s, 1H); δ = 8.32 (s, 3H); δ = 7.22 (d, J = 7.2 Hz, 1H); δ = 6.92 - 6.90 (m, 2H); δ = 4.85 - 4.82 (m, 1H); δ = 3.97 - 3.91 (m, 2H).

[0135] (15) Synthesis of C15: The synthetic route is the same as that of C1, except that 2-amino-3-phenylpropanol is replaced by (R)-3-amino-4-(2-thienyl)butyric acid. After reaction and purification, compound C15 is obtained with a yield of about 63%. Measured1 ¹H NMR (400 MHz, DMSO-d 6 ) δ = 12.03 (s, 1H); δ = 8.37 (s, 3H); δ = 7.38 (d, J = 7.2 Hz, 1H); δ = 6.97 - 6.90 (m, 2H); δ = 4.30 - 4.26 (m, 1H); δ = 3.64 - 3.60 (m, 2H); δ = 2.87 - 2.83 (m, 2H).

[0136] (16) Synthesis of C16: The synthetic route is the same as that of C1, except that 2-amino-3-phenylpropanol is replaced by (S)-3-amino-4-(2-thienyl)butyric acid. After reaction and purification, compound C16 is obtained with a yield of about 68%. Measured 1 ¹H NMR (400 MHz, DMSO-d 6 ) δ = 12.04 (s, 1H); δ = 8.38 (s, 3H); δ = 7.37 (d, J = 7.2 Hz, 1H); δ = 6.98 - 6.91 (m, 2H); δ = 4.30 - 4.27 (m, 1H); δ = 3.63 - 3.60 (m, 2H); δ = 2.85 - 2.82 (m, 2H).

[0137] (17) Synthesis of C17: The synthetic route is the same as that of C2, except that 2-amino-1-phenylethanol is replaced by (R)-3-amino-4-(3-thienyl)butyric acid. After reaction and purification, compound C17 is obtained with a yield of about 51%. Measured 1 ¹H NMR (400 MHz, DMSO-d 6 ) δ = 12.01 (s, 1H); δ = 8.33 (s, 3H); δ = 7.22 (d, J = 7.2 Hz, 1H); δ = 6.92 - 6.90 (m, 2H); δ = 4.33 - 4.28 (m, 1H); δ = 3.43 - 3.39 (m, 2H); δ = 3.06 - 3.02 (m, 2H).

[0138] (18) Synthesis of C18: The synthetic route is the same as that of C2, except that 2-amino-1-phenylethanol is replaced by (S)-3-amino-3-(2-thienyl)propionic acid. After reaction and purification, compound C18 is obtained with a yield of about 57%. Measured 1 ¹H NMR (400 MHz, DMSO-d 6 ) δ = 12.51 (s, 1H); δ = 8.34 (s, 3H); δ = 7.22 (d, J = 7.2 Hz, 1H); δ = 6.92 - 6.90 (m, 2H); δ = 5.23 - 5.19 (m, 1H); δ = 3.26 - 3.21 (m, 2H).

[0139] (19) Synthesis of C19: The synthesis route was the same as that of C2, except that 2-amino-1-phenylethanol was replaced by 3-([2,2'-bithiophen]-5-yl)-2-(aminomethyl)-1-propanol. After reaction and purification, compound C19 was obtained with a yield of about 21%. The measured 1 H NMR (400 MHz, DMSO-d 6 ) δ = 8.31 (s, 1H); δ = 7.61 (d, J = 7.2 Hz, 1H); δ = 7.51 - 7.47 (m, 2H); δ = 6.87 - 6.84 (m, 2H); δ = 4.26 (s, 1H); δ = 3.59 - 3.57 (m, 2H); δ = 3.39 - 3.35 (m, 2H); δ = 3.41 - 3.37 (m, 2H); δ = 2.52 - 2.48 (m, 1H).

[0140] (20) Synthesis of C20: 3-Bromo-2-(2-thienylmethyl)-1-amine (10 mmol) was dissolved in 20 mL of N,N-dimethylformamide, and then n-butylphosphine (PBu 3 , 11 mmol) was added dropwise. After reacting at 80 °C for 12 h, the reaction mixture was poured into diethyl ether and filtered to obtain compound C20 with a yield of about 58%. The measured 1 H NMR (400 MHz, DMSO-d 6 ) δ = 7.38 (d, J = 7.2 Hz, 1H); δ = 6.93 - 6.88 (m, 2H); δ = 4.25 (s, 1H); δ = 3.57 - 3.51 (m, 2H); δ = 2.87 - 2.77 (m, 2H); δ = 1.98 - 1.91 (m, 1H); δ = 1.45 - 1.27 (m, 20H); δ = 0.93 - 0.88 (m, 9H).

[0141] II. Fabrication of Perovskite Solar Cell Devices

[0142] Example 1:

[0143] (1) Twenty pieces of FTO conductive glass with a size of 2.0 cm * 2.0 cm were taken, and 0.35 cm of FTO was removed from both ends by laser etching to expose the glass substrate.

[0144] (2) The etched FTO conductive glass was ultrasonically cleaned several times with water, acetone, and isopropanol in sequence.

[0145] (3) The solvent on the FTO conductive glass was dried with a nitrogen gun and then further cleaned in an ultraviolet ozone machine.

[0146] (4) Spin-coat a methanol solution of nickel oxide nanoparticles (10 mg / mL) on the surface of FTO conductive glass at 2000 rpm, and remove the solvent by vacuum or annealing to form a nickel oxide thin film (with a thickness of 30 nm);

[0147] (5) Dissolve the self-assembled molecule [4-(3,6-dimethyl-9H-carbazol-9-yl)butyl]phosphonic acid in methanol (0.3 mg / mL) to obtain a self-assembled molecule solution. Spin-coat the self-assembled molecule on the surface of the nickel oxide thin film at 3000 rpm, and obtain a self-assembled molecular layer (with a thickness of 5 nm) by vacuum pumping or annealing;

[0148] (6) Weigh lead iodide (726 mg), formamidinium iodide (240 mg), cesium iodide (19 mg), and lead bromide (11 mg), dissolve them in 1 mL of a mixed solution of DMF and DMSO (volume ratio 4:1), stir for 3 h, and filter with a 0.22 μm organic filter membrane to obtain a perovskite precursor solution. Spin-coat the perovskite precursor solution on the obtained self-assembled molecular layer at 3000 rpm, anneal at 100 °C for 30 min, and cool to room temperature. The active substance of the perovskite absorption layer is the CsFA system, with a thickness of 800 nm;

[0149] (7) Dissolve PC 61 BM in chlorobenzene (10 mg / mL), add C1 to the above solution (0.1 mg / mL, doping amount is 1%), spin-coat this solution on the perovskite layer at 1500 rpm to prepare an electron transport layer, anneal at 100 °C for 10 min, with a thickness of 20 nm, and then spin-coat its blocking layer BCP at 5000 rpm, with a thickness of 5 nm;

[0150] (8) Put the semi-finished product obtained in the previous step into an evaporation machine, evaporate the metal electrode Cu (with a thickness of 100 nm) to obtain a battery device labeled as Battery 1.

[0151] Examples 2-5:

[0152] On the basis of Example 1, change the addition method of the interface passivation material C1, and remove the addition of C1 in step (7).

[0153] Among them, the differences are as follows:

[0154] In Example 2, add C1 to the perovskite precursor solution in step (6) (0.1 mg / mL, doping amount is about 0.01%);

[0155] In Example 3, add C1 to the methanol solution of the self-assembled molecule in step (5) (doping amount is 0.3%);

[0156] Example 4 After the perovskite layer was prepared in step (6), an isopropanol solution of C1 (0.1 mg / mL, 30 μL) was spin-coated on the perovskite surface at 2000 rpm;

[0157] Example 5 After the self-assembled molecular layer was prepared in step (5), an isopropanol solution of C1 (0.1 mg / mL, 30 μL) was spin-coated on the surface of the self-assembled molecular layer at 2000 rpm.

[0158] The battery devices obtained in Examples 2-5 were labeled as Batteries 2-5 respectively.

[0159] Examples 6-24:

[0160] On the basis of Example 1, the type of the interfacial passivation material was changed. The difference was that in Examples 6-24, C1 was replaced by C2, C3, C4, C5, C6, C7, C8, C9, C10, C11, C12, C13, C14, C15, C16, C17, C18, C19, and C20 respectively. The battery devices obtained in Examples 6-24 were labeled as Batteries 6-24 respectively.

[0161] Comparative Example 1:

[0162] On the basis of Example 1, the interfacial passivation material C1 in step (7) was removed, and the obtained battery device was labeled as Battery 25.

[0163] Comparative Example 2:

[0164] On the basis of Example 1, C1 was replaced by D1 The obtained battery device was labeled as Battery 26.

[0165] Comparative Example 2:

[0166] On the basis of Example 1, C1 was replaced by D2 The obtained battery device was labeled as Battery 27.

[0167] III. Performance Test of Perovskite Solar Cell Devices

[0168] (1) I-V measurement method:

[0169] By changing the bias voltage point and simultaneously measuring the current, the I-V characteristics of the sample under test can be obtained.

[0170] a) Place the test fixture with the sample cell on the sample stage so that it is located in the measurement plane, and ensure that the sample cell is located at the center of the exit light spot of the solar simulator (or the normal of the photovoltaic cell is parallel to the center line of the exit light beam of the solar simulator light source);

[0171] b) Use Guangyan's solar simulator and conduct tests in accordance with the national standard IEC61215. Calibrate the light intensity using a crystalline silicon solar cell to achieve a solar intensity of one sun. Under the condition of an irradiance of 1000 W / m 2 Install a mask on the sample cell to be measured, and use a temperature monitoring device to control the temperature of the sample cell so that during the measurement, the temperature of the sample cell to be measured is maintained at (30 ± 5°C);

[0172] c) Set the scanning direction, voltage range, scanning interval voltage, scanning interval time, etc. It is recommended that the scanning interval is not greater than 0.02 V, and the interval time between adjacent points is not less than 0.3 s. Measure the forward and reverse sweep current-voltage characteristics of the sample cell to be measured, and record the open-circuit voltage V OC , short-circuit current J SC .

[0173] Calculation formula: Fill factor FF = J m *V m / V OC *J SC , energy conversion efficiency PCE = V OC *J SC *FF / P in . P in is the incident light intensity, which is equal to 10 3 W / m 2 .

[0174] The test results are shown in Table 1.

[0175] Table 1 Test parameter table of each example and comparative example

[0176]

[0177] Note: The optimal efficiency is the highest efficiency after the device has been naturally aged for 1 - 10 days, and the efficiency on the 30th day is the device efficiency after the device has been stored in nitrogen in the dark state.

[0178] IV. Analysis of the test results of the performance of perovskite solar cell devices

[0179] As shown in Table 1, compared with the comparative examples without adding an interface passivation material and the comparative examples adding other interface passivation materials, the interface passivation materials with different types and addition methods in the examples of this article all improve the performance of perovskite solar cell devices. The optimal efficiency is between 24.79% - 25.58%, which is better than 19.05% when no interface passivation material is added, and 23.53% and 23.37% when other interface passivation materials are added; the efficiency on the 30th day is between 24.43% - 25.29%, which is better than 16.68% when no interface passivation material is added, and 21.05% and 20.88% when other interface passivation materials are added.

[0180] In addition, the interface passivation materials with different types and addition methods in the embodiments of the present invention all improve the stability of the perovskite solar cell devices, and the energy conversion efficiency decreases very little after 30 days of storage, which is better than that of the comparative example.

[0181] The above description is only the implementation manner of the present application, and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made by using the content of the specification and drawings of the present application, or directly or indirectly applied in other related technical fields, shall be similarly included in the patent protection scope of the present application.

Claims

1. An interface passivation material, characterized in that, the interface passivation material comprises a first compound with the chemical formula of formula (1) and / or a second compound with the chemical formula of formula (2): wherein, Ar is an aromatic group; Q is a functional group containing active hydrogen; A + selected from ammonium or phosphonium; X - selected from any one of halide ions, pseudohalide ions, oxyacid anions, fluoroacid anions, and sulfonylimide anions; L1-L5 are selected from any one of an alkyl chain with 0-10 carbon atoms, a halogen-substituted alkyl chain with 0-10 carbon atoms, a heteroatom chain with 0-10 carbon atoms containing heteroatoms, a halogen-substituted heteroatom chain with 0-10 carbon atoms containing heteroatoms, and a single heteroatom, and the heteroatoms include one or more of nitrogen atom, oxygen atom, and sulfur atom, wherein an alkyl chain with 0 carbon atoms means that the two groups connected to L1-L5 are directly connected.

2. The interface passivation material according to claim 1, characterized in that, Q is selected from any one of hydroxyl group (-OH), carboxyl group (-COOH), mercapto group (-SH), amino group (-NR’H), and amide group (-NHCOR); R’ is selected from any one of a hydrogen atom, an alkyl chain with 1-10 carbon atoms, and a halogen-substituted alkyl chain with 1-10 carbon atoms; R is selected from any one of a hydrogen atom, a halogen atom, an alkyl chain with 1-10 carbon atoms, a halogen-substituted alkyl chain with 1-10 carbon atoms, a heteroatom chain with 1-10 carbon atoms containing heteroatoms, and a halogen-substituted heteroatom chain with 1-10 carbon atoms containing heteroatoms, and the heteroatoms include one or more of nitrogen atom, oxygen atom, and sulfur atom.

3. The interface passivation material according to claim 1 or 2, characterized in that, Ar in the first compound includes any one of the following structures Ar1-Ar15: wherein, Y1-Y18 are selected from any one of oxygen atom (-O-), sulfur atom (-S-), and R’-substituted nitrogen atom (-NR’-); R’ is selected from any one of a hydrogen atom, an alkyl chain with 1-10 carbon atoms, and a halogen-substituted alkyl chain with 1-10 carbon atoms; R1-R79 are selected from any one of a hydrogen atom, a halogen atom, an alkyl chain with 1-10 carbon atoms, a halogen-substituted alkyl chain with 1-10 carbon atoms, a heteroatom chain with 1-10 carbon atoms containing heteroatoms, and a halogen-substituted heteroatom chain with 1-10 carbon atoms containing heteroatoms, and the heteroatoms include one or more of nitrogen atom, oxygen atom, and sulfur atom; Among them, represents a single-bond connection site. When the structure of the interface passivation material is the formula (1), the structure Ar1-Ar15 is connected to the L1; and / or Ar in the second compound includes any one of the following structures Ar16-Ar30: Among them, the difference between Ar16 and Ar1 is that any one of R1-R5 is substituted; the difference between Ar17 and Ar2 is that any one of R6-R12 is substituted; the difference between Ar18 and Ar3 is that any one of R13-R19 is substituted; the difference between Ar19 and Ar4 is that any one of R20-R28 is substituted; the difference between Ar20 and Ar5 is that any one of R29-R31 is substituted; the difference between Ar21 and Ar6 is that any one of R32-R34 is substituted; the difference between Ar22 and Ar7 is that any one of R35-R37 is substituted; the difference between Ar23 and Ar8 is that any one of R38-R40 is substituted; the difference between Ar24 and Ar9 is that any one of R41-R45 is substituted; the difference between Ar25 and Ar10 is that any one of R46-R50 is substituted; the difference between Ar26 and Ar11 is that any one of R51-R55 is substituted; the difference between Ar27 and Ar12 is that any one of R56-R60 is substituted; the difference between Ar28 and Ar13 is that any one of R61-R69 is substituted; the difference between Ar29 and Ar14 is that any one of R70-R74 is substituted; the difference between Ar30 and Ar15 is that any one of R75-R79 is substituted. When the structure of the interface passivation material is of the formula (2), the structure Ar16 - Ar30 is connected to the L4 and L5 respectively through the respectively.

4. The interface passivation material according to any one of claims 1 to 3, characterized in that, The ammonium group includes -NR' 3 + ; and / or the phosphonium group includes -PR' 3 + ; wherein, R’ is selected from any one of a hydrogen atom, an alkyl chain with 1-10 carbon atoms, and a halogen-substituted alkyl chain with 1-10 carbon atoms.

5. The interface passivation material according to any one of claims 1 to 4, characterized in that, The halogen ions include F - , Cl - , Br - , I - ; and / or The pseudo-halide ions include CN - , OCN - , SCN - ; and / or The oxyacid anions include NO 3 - , ClO 3 - , R”SO 3 - , R”COO - , R”PO 2 (OH) - any one of them, where R” is selected from any one of a hydrogen atom, an alkyl chain with 1-10 carbon atoms, an alkyl chain with 1-10 carbon atoms substituted by a halogen, Ar1-A15, and an alkyl chain with 1-10 carbon atoms substituted by Ar1-Ar15; and / or The fluorine-containing acid radical ions include BF 4 - , PF 6 - any one of them; and / or The sulfimide anion includes (CF 3 SO 2 ) 2 N - .

6. The interface passivation material according to any one of claims 1 to 5, characterized in that, the interface passivation material includes any one of the following structures C1-C27:

7. A solar cell, characterized in that, it includes the interface passivation material according to any one of claims 1 to 6.

8. The solar cell according to claim 7, characterized in that, the solar cell includes a first electrode, a first transport layer, a light absorption layer, a second transport layer, and a second electrode that are sequentially stacked; the interface passivation material is distributed in one or more of the first transport layer, the light absorption layer, and the second transport layer.

9. The solar cell according to claim 8, characterized in that, based on the total mass of the doped base layer, the doping ratio of the interface passivation material is 0.005%-5%, and the doped base layer is any one of the first transport layer, the light absorption layer, and the second transport layer.

10. The solar cell according to any one of claims 8 or 9, characterized in that, the first transport layer is an electron transport layer and the second transport layer is a hole transport layer, or the first transport layer is a hole transport layer and the second transport layer is an electron transport layer.

11. The solar cell according to any one of claims 7 to 9, characterized in that, the solar cell includes a first electrode, a first transport layer, a light absorption layer, a second transport layer, and a second electrode that are sequentially stacked, the solar cell further includes a passivation layer, and the interface passivation material is distributed in the passivation layer; the passivation layer is located between the first transport layer and the light absorption layer, and / or the passivation layer is located between the second transport layer and the light absorption layer.

12. The solar cell according to claim 11, characterized in that, the thickness of the passivation layer is 0.1-10 nm.

13. The solar cell according to any one of claims 11 or 12, characterized in that, the first electrode, the first transport layer, the light absorption layer, the second transport layer, and the second electrode are sequentially arranged from the light incident surface of the base layer from bottom to top, the first transport layer is a hole transport layer, the second transport layer is an electron transport layer, the light absorption layer includes a perovskite material, and the passivation layer is located between the electron transport layer and the light absorption layer.

14. The solar cell according to any one of claims 10 to 13, characterized in that, the material of the first electrode includes any one of fluorine-doped tin oxide, indium tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, and indium-doped zinc oxide; and / or The light absorption layer comprises a perovskite material, and the perovskite material comprises ABX 3 or A 2 CDX 6 wherein A is any one of an inorganic cation, an organic cation, and an organic-inorganic hybrid cation, and may be selected from at least one of a methylammonium ion, a n-butylammonium ion, and a cesium ion; B is any one of an inorganic cation, an organic cation, and an organic-inorganic hybrid cation, and may be selected from at least one of a lead ion and a tin ion; C is any one of an inorganic cation, an organic cation, and an organic-inorganic hybrid cation, and may be selected from a silver ion; D is any one of an inorganic cation, an organic cation, and an organic-inorganic hybrid cation, and may be selected from at least one of a bismuth cation, an antimony cation, and an indium cation; X is any one of an inorganic anion, an organic anion, and an organic-inorganic hybrid anion, and may be selected from at least one of a bromide ion and an iodide ion; and / or The materials of the electron transport layer include [6,6]-phenyl C 61 butyric acid methyl ester (PC 61 BM), [6,6]-phenyl C 71 butyric acid methyl ester (PC 71 BM), fullerene C 60 (C 60 ), fullerene C 70 (C 70 ), tin dioxide (SnO 2 ), zinc oxide (ZnO), perylene diimide (PDI) materials, naphthalene diimide (NDI) materials and their derivatives, and materials obtained by doping or passivation thereof; and / or The materials of the hole transport layer include one or more of metal oxide materials, polymer materials, organic small molecule self-assembled molecular materials and their derivatives, and materials obtained by doping or passivating them; optionally nickel oxide (NiO x2 , 1.5 ≥ x2 ≥ 1), molybdenum oxide (MoO x3 , 3 ≥ x3 ≥ 2.5), tungsten oxide (WO x3 ), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) (PEDOT:PSS), carbazole or triphenylamine materials containing phosphoric acid or carboxylic acid groups; and / or the electrode material of the second electrode includes one or more of an organic conductive material, an inorganic conductive material, and an organic-inorganic hybrid conductive material; optionally one or more of silver, copper, carbon, gold, aluminum, indium tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, and indium-doped zinc oxide.

15. The solar cell according to claim 14, characterized in that, the thickness of the first electrode is 10-1000 nm; and / or the light absorption layer includes a perovskite material, the perovskite material has a band gap of 1.20-2.30 eV, and the thickness of the light absorption layer is 200-1000 nm; and / or the thickness of the electron transport layer is 5-100 nm; and / or The thickness of the hole transport layer is 0.5 - 50 nm; and / or The thickness of the second electrode is 10 - 1000 nm.

16. The solar cell according to any one of claims 10 to 15, characterized in that the solar cell further comprises a blocking layer, the blocking layer is located between the electron transport layer and the first electrode, or the blocking layer is located between the electron transport layer and the second electrode; The material of the barrier layer includes one or more of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, tin dioxide, zinc oxide, and cerium oxide. Among them, the chemical formula of cerium oxide is CeO x1 , and 1.5 ≤ x1 ≤ 2, and the thickness of the barrier layer is 0.5 - 200 nm.

17. A photovoltaic power generation system, characterized in that it comprises the solar cell according to any one of claims 7 - 16.

18. An electrical device, characterized in that it comprises the solar cell according to any one of claims 7 - 16.

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