Polishing pad and chemical mechanical polishing device

By designing a special groove structure on the grinding pad of the chemical mechanical grinding device, the problem of degradation of grinding uniformity in the later stage of the service life of the grinding pad is solved, and uniform grinding efficiency is achieved throughout the service life.

CN120170634APending Publication Date: 2025-06-20WINBOND ELECTRONICS CORP
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Patent Information

Application Number
CN202410495983.4
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-12-19
Filing Date
2024-04-24
Publication Date
2025-06-20

AI Technical Summary

Technical Problem

In the later period of the service life of the grinding pad of the chemical mechanical grinding device, the grinding uniformity decreases, resulting in the grinding rate being lower than the center area in the edge area.

Method used

The grinding pad design includes a central part and an edge part, the central part is provided with a central groove, the edge part is provided with an edge groove arranged along an annular contour, the lower diameter area is larger than the upper part, and the shape is different.

Benefits of technology

With this design, sufficient grinding uniformity can be maintained later in the service life of the grinding pad, avoiding the problem that the grinding rate is lower than the center area in the edge area.

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Abstract

The invention provides a polishing pad and a chemical mechanical polishing device. The polishing pad includes: a central portion provided with a central groove; and an edge portion surrounding the central portion and provided with at least one edge groove. At least one edge groove is disposed along the annular profile. The lower portion of the at least one edge groove is larger than the upper portion of the at least one edge groove in aperture area and is different from the upper portion of the at least one edge groove in shape.
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Description

Technical Field

[0001] The present invention relates to a semiconductor manufacturing apparatus and components thereof, and more particularly to a chemical mechanical polishing apparatus and a polishing pad used therein. Background Art

[0002] Semiconductor processes often perform planarization operations using chemical mechanical polishing (CMP). During chemical mechanical polishing, in addition to the reaction between the polishing liquid and the wafer, the carrier and the wafer chuck rotate so that the suspended particles in the polishing liquid polish the wafer through the support of the polishing pad. The polishing pad conditioning device contacts the rotating polishing pad to scrape off the polishing residues and maintain the roughness of the polishing pad.

[0003] Compared with the edge region of the polishing pad, the central region of the polishing pad is worn by the polishing pad conditioning device at a higher rate. Therefore, in the later stage of the polishing pad service life, the polishing pad will form a structure concave from the periphery to the center. This makes it difficult for the grooves in the edge region of the polishing pad to hold the polishing liquid, resulting in a lower polishing rate in the edge region of the polishing pad than in the central region of the polishing pad. In other words, in the later stage of the polishing pad service life, there is a problem of decreased polishing uniformity. Summary of the Invention

[0004] The present disclosure provides a polishing pad and a chemical mechanical polishing apparatus using the same. Through the special groove design of the polishing pad, sufficient polishing uniformity can be maintained in the later stage of the polishing pad service life.

[0005] In an embodiment of the present disclosure, a polishing pad for a chemical mechanical polishing apparatus is provided and includes: a central portion provided with a central groove; and an edge portion surrounding the central portion provided with at least one edge groove, wherein the at least one edge groove is arranged along an annular contour, a lower portion of the at least one edge groove is larger than an upper portion of the at least one edge groove in terms of aperture area, and is different in shape from the upper portion of the at least one edge groove.

[0006] In another embodiment of the present disclosure, a chemical mechanical polishing apparatus is provided and includes: a stage; a polishing pad placed on the stage and including a central portion and an edge portion surrounding the central portion, wherein the central portion is provided with a central groove, the edge portion is provided with at least one edge groove, the at least one edge groove is arranged along an annular contour, a lower portion of the at least one edge groove is larger than an upper portion of the at least one edge groove in terms of both aperture area and capacity, and is different in shape from the upper portion of the at least one edge groove; a wafer chuck configured to adsorb and control a wafer so that the wafer contacts the polishing pad from above; and a polishing liquid supply device configured to supply polishing liquid from above to a surface of the polishing pad. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 is a perspective schematic view of a chemical mechanical polishing apparatus according to some embodiments;

[0008] Figure 2A 、 Figure 4A and Figure 6A are top view schematic views of a polishing pad at the initial stage of its service life shown according to some embodiments;

[0009] Figure 2B is a cross-sectional schematic view along the A-A' line of Figure 2A ;

[0010] Figure 3A is Figure 2A a top view schematic view of the polishing pad shown at the later stage of its service life;

[0011] Figure 3B is a cross-sectional schematic view along the A-A' line of Figure 3A ;

[0012] Figure 4B is a cross-sectional schematic view along the A-A' line of Figure 4A ;

[0013] Figure 5A is Figure 4A a top view schematic view of the polishing pad shown at the later stage of its service life;

[0014] Figure 5B is a cross-sectional schematic view along the A-A' line of Figure 5A ;

[0015] Figure 6B is a cross-sectional schematic view along the A-A' line of Figure 6A ;

[0016] Figure 7A is Figure 6A a top view schematic view of the polishing pad shown at the later stage of its service life;

[0017] Figure 7B is a cross-sectional schematic view along the A-A' line of Figure 7A ;

[0018] Figure 8A is a top view schematic view of a polishing pad shown at the later stage of its service life according to some embodiments;

[0019] Figure 8B is a cross-sectional schematic view along the A-A' line of Figure 8A ; DETAILED DESCRIPTION OF THE INVENTION

[0020] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0021] The disclosed embodiments provide a solution to address the insufficient polishing uniformity that occurs in the later stage of the polishing pad's service life. Specifically, through a special groove design of the polishing pad, sufficient polishing uniformity can be maintained in the later stage of the polishing pad's service life.

[0022] Figure 1 is a perspective schematic view of a chemical mechanical polishing apparatus 10 according to some embodiments of the present disclosure.

[0023] Please refer to Figure 1 , the chemical mechanical polishing apparatus 10 may include a stage 100, a polishing pad 102 disposed on the stage 100, a wafer chuck 104 for adsorbing and controlling a wafer W, a polishing liquid supply device 106 for supplying a polishing liquid SL, and a polishing pad conditioner 108 for dressing the surface of the polishing pad 102.

[0024] During the chemical mechanical polishing operation, the polishing liquid supply device 106 supplies the polishing liquid SL to the surface of the polishing pad 102, and the polishing liquid SL is at least partially stored in the grooves on the surface of the polishing pad 102. In addition, the wafer chuck 104 adsorbs the wafer W and presses the wafer W against the polishing pad 102, and the wafer chuck 104 carrying the wafer W and the stage 100 carrying the polishing pad 102 rotate relative to each other. At this time, the polishing liquid SL held in the grooves of the polishing pad 102 is released onto the surface of the polishing pad 102. The chemical additives in the polishing liquid SL react with the wafer W to remove the target material on the surface of the wafer W. In addition, the abrasive particles in the polishing liquid SL polish the wafer W through the support of the polishing pad 102. Through the above chemical reaction and physical polishing, the surface of the wafer W can be planarized.

[0025] In addition, during the chemical mechanical polishing operation, the polishing pad conditioner 108 contacts the polishing pad 102 from above, and removes the polishing residues and dresses the surface of the polishing pad 102 by a rotating disk (such as a diamond disk). More specifically, the disk of the polishing pad conditioner 108 wears the polishing pad 102 to dress the polishing pad 102 and maintain the roughness of the polishing pad 102. It can be seen that after being dressed by the polishing pad conditioner 108, the thickness of the polishing pad 102 will be thinned. However, in fact, the thickness reduction of the polishing pad 102 is not uniform.

[0026] The closer the part of the polishing pad 102 is to the center, the smaller its radius, and the closer it is to the edge, the larger its radius. In other words, compared with the part of the polishing pad 102 closer to the edge, the part of the polishing pad 102 closer to the center has a higher rotational speed (revolutions per minute, RPM) and contacts the polishing pad dressing device 108 more times. As a result, the part of the polishing pad 102 closer to the center is worn more by the polishing pad dressing device 108. Therefore, in the later stage of the service life of the polishing pad 102, the polishing pad 102 may form a structure that gradually concaves inward from the periphery to the center. At this time, the polishing liquid SL held in the grooves at the edge part of the polishing pad 102 may flow toward the center of the polishing pad 102. The area with more sufficient polishing liquid SL has better polishing efficiency, and vice versa. To avoid the problem that the polishing rate of the edge part of the polishing pad 102 is lower than that of the center part due to lack of sufficient polishing liquid SL in the later stage of the service life of the polishing pad 102, the polishing pad 102 has different groove designs in the center part and the edge part.

[0027] Figure 2A is a top view schematic diagram of the polishing pad 102 at the initial stage of its service life shown according to some embodiments. Figure 2B is along Figure 2A the cross-sectional schematic diagram of the A-A' line.

[0028] Please refer to Figure 2A , the polishing pad 102 can be divided into a center part CR and an edge part PR surrounding the center part CR. In the center part CR, the polishing pad 102 has a plurality of center grooves R arranged in sequence from the center of the polishing pad 102 to the outside C . In some embodiments, these center grooves R C can be respectively annular grooves continuously extending around the center of the polishing pad 102. As an example, the center groove R C can be concentric circular grooves. In other embodiments, the center groove Rc can also be a cross groove or a groove of other shapes. It should be understood that those skilled in the art should be able to adjust the shape and quantity of the center groove R C according to actual needs, and the present disclosure is not limited thereto.

[0029] As Figure 2B shown, each center groove R C can have a substantially uniform width from top to bottom. In this way, each center groove R C exposes openings of substantially the same size at each stage of the service life of the polishing pad 102, and can provide substantially equal amounts of polishing liquid SL on the surface of the polishing pad 102. In other words, at each stage of the service life of the polishing pad 102, the center part CR of the polishing pad 102 has substantially the same polishing rate.

[0030] On the other hand, as Figure 2A shown, the polishing pad 102 has a plurality of edge grooves R separated from each other within the edge portion PR P . These edge grooves R P are arranged along one or more annular contours on the periphery of the central groove R within the central portion CR. As an example, the polishing pad 102 has edge grooves R arranged along two concentric circular annular contours on the periphery of the central groove R C within the edge portion PR. C It should be understood that those skilled in the art should be able to adjust the number of turns of the edge grooves R P according to the size of the edge portion PR, and the present disclosure is not limited thereto. P

[0031] As Figure 2B shown, the upper part of each edge groove R P is a straight hole H1, and the lower part of each edge groove R P is a U-shaped hole H2. As a combination of the hole H1 and the hole H2, each edge groove R P has a shape similar to a bent umbrella handle. In the early stage of the service life of the polishing pad 102, each edge groove R P is only exposed through the straight hole H1 in the upper part.

[0032] In some embodiments, the caliber width of each edge groove R P in the edge portion PR (that is, the caliber width W P1 of the straight hole H1 and the caliber width W P2 of each section of the U-shaped hole H2) is approximately equal to the caliber width W C of each central groove R in the central portion CR. C In other embodiments, the caliber width W P of each edge groove R P1 / W P2 in the edge portion PR is less than the caliber width W C of each central groove R in the central portion CR. C

[0033] Furthermore, according to some embodiments, each edge groove R P in the edge portion PR of the polishing pad 102 is inclined. Specifically, each edge groove R P is inclined from the vertical direction in such a way that the opening faces the central axis of the polishing pad 102. In other words, each edge groove R PSimilar to pouring towards the center of the polishing pad 102. This design helps to further retain the polishing liquid SL at the edge portion PR of the polishing pad 102 by using centrifugal force in the later stage of the service life of the polishing pad 102, so as to further improve the polishing uniformity in the later stage of the service life of the polishing pad 102. On the other hand, the central groove R in the central portion CR of the polishing pad 102 C has no inclined design. In other words, the central groove R C can extend along the vertical direction into the polishing pad 102.

[0034] Figure 3A Is a top view schematic diagram of the polishing pad 102 in the later stage of its service life. Figure 3B Is along Figure 3A The cross-sectional schematic diagram of the A-A' line.

[0035] After the polishing pad 102 is used for a period of time, the surface is gradually worn, and the straight holes H1 at the upper part of each edge groove R P Are removed. At this time, the U-shaped holes H2 of each edge groove R P Are exposed. As Figure 3A And Figure 3B Shown, each U-shaped hole H2 is exposed at the edge portion PR of the polishing pad 102 with two openings. Compared with the initial stage of the service life of the polishing pad 102, there are twice the number of openings and the opening area at the edge portion PR in the later stage of the service life of the polishing pad 102. In some embodiments, as Figure 3A Shown, the openings of the U-shaped holes H2 are arranged in a radial manner.

[0036] Compared with the groove with straight holes from top to bottom, the lower part of the edge groove R P Designed as a U-shape can have a larger capacity and can hold more polishing liquid SL, and has a double cross-sectional area. Therefore, in the later stage of the service life of the polishing pad 102 (when the straight holes H1 are worn out and the U-shaped holes H2 are exposed), sufficient polishing liquid SL can still be provided at the edge portion PR of the polishing pad 102. Therefore, it is possible to avoid the phenomenon that the edge portion PR of the polishing pad 102 has a significantly lower polishing rate than the central portion CR due to lack of sufficient polishing liquid SL in the later stage of the service life of the polishing pad 102. In this way, the problem of uneven polishing generated in the later stage of the service life of the polishing pad 102 can be solved.

[0037] In each edge groove R P The caliber width (that is, the caliber width W of the straight hole H1 P1 And the caliber width W of each section of the U-shaped hole H2 P2 ) is approximately equal to the caliber width W of each central groove R in the central portion CR C Of CIn the embodiment, the polishing rates of the central portion CR and the peripheral portion PR of the polishing pad 102 are substantially the same in the early stage of the service life, and the peripheral portion PR has an opening area approximately twice that in the later stage of the service life of the polishing pad 102. In this way, the problem of uneven polishing generated after the service life can be solved while maintaining high polishing uniformity in the early stage of the service life.

[0038] On the other hand, the central groove R in the central portion CR of the polishing pad 102 C After being trimmed, the bottom portion is left and a single opening is respectively maintained. By increasing the caliber area of the peripheral groove R of the peripheral portion PR in the later stage of the service life of the polishing pad 102 P while maintaining the caliber area of the central groove R of the central portion CR C of the caliber area, it is possible to compensate as much as possible for the uneven distribution of the polishing liquid caused by non-uniform trimming, and improve the polishing uniformity.

[0039] Figure 4A is a top view schematic diagram of the polishing pad 402 in the initial stage of the service life shown according to some embodiments. Figure 4B is along Figure 4A a cross-sectional schematic diagram of the A-A' line. Figure 5A is a top view schematic diagram of the polishing pad 402 in the later stage of the service life. Figure 5B is along Figure 5A the A-A' line of the cross-sectional schematic diagram.

[0040] The polishing pad 402 is similar to the polishing pad 102 described with reference to Figure 2A , Figure 2B , Figure 3A and Figure 3B , only the groove design of the peripheral portion PR is different. As Figure 4A shown, the peripheral portion PR of the polishing pad 402 is provided with a peripheral groove R P 1 that continuously extends along the annular contour. As an example, the peripheral groove R P 1 of the polishing pad 402 continuously extends along the concentric circular annular contour in the peripheral portion PR. Those skilled in the art can adjust the number of turns of the peripheral groove R P 1 according to the size of the peripheral portion PR, and the present disclosure is not limited thereto.

[0041] As Figure 4B shown, the peripheral groove R P 1 includes a straight groove T1 in the upper part and a U-shaped groove T2 in the lower part. Different from the straight hole H1 and the U-shaped hole H2 described with reference to Figure 2B , the straight groove T1 and the U-shaped groove T2 continuously extend along the annular contour. In the early stage of the service life of the polishing pad 402 (as Figure 4A and Figure 4BAs shown, each edge groove R P 1 is only exposed by the straight groove T1 at the upper part. After the polishing pad 402 is used for a period of time, the surface is gradually worn, and the straight groove T1 at the upper part of each edge groove R P 1 is removed. At this time, as Figure 5A shown by Figure 5B , each edge groove R P 1 has its U-shaped groove T2 exposed in a double-ring opening. Compared with the groove with straight holes / grooves from top to bottom, the lower part of the edge groove R P 1 is designed to be U-shaped and can accommodate more polishing liquid SL, and has a cross-sectional area approximately twice as large. Therefore, in the later stage of the service life of the polishing pad 402, sufficient polishing liquid SL can still be provided at the edge portion PR of the polishing pad 402. Therefore, it is possible to avoid the phenomenon that the edge portion PR of the polishing pad 402 has a significantly lower polishing rate than the central portion CR due to the lack of sufficient polishing liquid SL in the later stage of the service life of the polishing pad 402. In this way, the problem of uneven polishing generated in the later stage of the service life of the polishing pad 402 can be solved. Furthermore, compared with the straight hole H1 and the U-shaped hole H2 described with reference to Figure 2B , the straight groove T1 and the U-shaped groove T2 can have a larger polishing liquid capacity and a larger opening area, so more polishing liquid SL can be provided for the edge portion PR of the polishing pad 402.

[0042] In some embodiments, the caliber width W P3 of the straight groove T1 and the individual caliber widths W P4 of the U-shaped groove T2 are respectively substantially equal to the caliber width W C of each central groove R C in the central portion CR. In these embodiments, the polishing rates of the central portion CR and the edge portion PR are substantially the same in the early stage of the service life of the polishing pad 402, and the edge portion PR has an opening area approximately twice as large in the later stage of the service life. In this way, the problem of uneven polishing generated after the service life can be solved while maintaining high polishing uniformity in the early stage of the service life. In other embodiments, the caliber width W P3 of the straight groove T1 and the individual caliber widths W P4 of the U-shaped groove T2 are respectively smaller than the caliber width W C of the central groove Rc.

[0043] Figure 6A is a top view schematic diagram of the polishing pad 602 in the initial stage of the service life according to some embodiments. Figure 6B is a cross-sectional schematic diagram along the Figure 6A A-A' line. Figure 7A is a top view schematic diagram of the polishing pad 602 in the later stage of the service life. Figure 7Bis a cross-sectional schematic view along the A-A' line of Figure 7A .

[0044] The polishing pad 602 is similar to the polishing pads 102 described with reference to Figure 2A , Figure 2B , Figure 3A and Figure 3B , except that the groove design in the edge portion PR is different. As shown in Figure 6A , the edge portion PR of the polishing pad 602 is provided with an edge groove R P 2 that continuously extends along the annular contour. Specifically, each edge groove R P 2 exposes the double annular groove T3 above. As an example, the double annular groove T3 of each edge groove R P 2 of the polishing pad 602 continuously extends along the concentric annular contour in the edge portion PR. Those skilled in the art can adjust the number of edge grooves R P 2 according to the size of the edge portion PR, and the present disclosure is not limited thereto. In addition, the caliber width WP5 of each annular groove of the double annular groove T3 can be greater than, equal to, or less than the caliber width W C of the central groove R C .

[0045] As shown in Figure 6B , each edge groove R P 2 includes the double annular groove T3 above and a plurality of holes H3 below. The holes H3 overlap and communicate with the double annular groove T3 above. Compared with the double annular groove T3, the holes H3 have a larger caliber area (the caliber width W P6 of the holes H3 is greater than the total caliber width of the double annular groove T3) and a larger capacity. In addition, compared with each U-shaped hole H2 described with reference to Figure 2B , each hole H3 has a single-opening structure and a larger caliber area (the caliber width W P6 of the holes H3 can be greater than the total caliber width of the holes H2) and a larger capacity. The polishing liquid SL can enter the edge groove R P 2 from the double annular groove T3 and accumulate in the holes H3 as a polishing liquid pool.

[0046] In the early stage of the service life of the polishing pad 602 (as shown in Figure 6A and Figure 6B ), each edge groove R P 2 is only exposed by the double annular groove T3 above. After the polishing pad 602 is used for a period of time, the surface is gradually worn, and the double annular groove T3 above each edge groove R P 2 is removed. At this time, as shown in Figure 7A and Figure 7B , each edge groove R P2 is exposed as a hole H3 with a larger diameter area. According to some embodiments, Figure 7A As shown, the holes H3 are arranged in the edge portion PR along the annular contour and separated from each other. As an example, the holes H3 can be set in the edge portion PR along two concentric circular contours and separated from each other, and arranged in a radial manner. Since the holes H3 exposed in the later period of the service life of the polishing pad 602 are larger in caliber area and capacity than the double annular grooves T3 exposed in the early period of the service life of the polishing pad 602, the uneven distribution of the polishing liquid caused by non-uniform dressing can be compensated by increasing the amount of polishing liquid SL provided in the edge portion PR in the later period of the service life of the polishing pad 602, so as to improve the polishing uniformity. Furthermore, compared with the reference Figure 2B The straight hole H1 and the U-shaped hole H2 , the double annular groove T3 and the hole H3 described above can have a larger polishing liquid capacity and a larger aperture area, so more polishing liquid SL can be provided to the edge portion PR of the polishing pad 602 .

[0047] The diameter width W of each annular groove of the double annular groove T3 is P5 Approximately equal to each center groove R in the center part CR C The aperture width W C In the embodiment, the polishing rates of the center portion CR and the edge portion PR in the early period of the service life of the polishing pad 602 are substantially the same, and the edge portion PR has an opening area more than twice as large in the late period of the service life of the polishing pad 602. In this way, the problem of uneven polishing generated in the late period of the service life can be solved while the polishing uniformity is high in the early period of the service life.

[0048] Figure 8A FIG. 8 is a top view of the polishing pad 802 at the end of its service life. Figure 8B is along Figure 8A Schematic cross-sectional view of line A-A'.

[0049] Although not shown, each edge groove R in the edge portion PR of the polishing pad 802 P 3 Similar to reference Figure 6A ,and Figure 6B The edge groove R described P 2 and includes a double annular groove T3 on the upper portion. In addition, each edge groove R P 3 includes a lower annular groove T4. Similar to reference Figure 6B , Figure 7A and Figure 7B The hole H3 described above has an annular groove T4 that overlaps and is connected to the double annular groove T3 above, and has a larger aperture area (the aperture width W of the annular groove T4 is 0.04mm) than the double annular groove T3. P7(which can be greater than the total aperture width of the double annular groove T3) and a larger capacity. As a difference, the annular groove T4 continuously extends below the double annular groove T3, rather than being disposed separately below the double annular groove T3. In this way, compared with the hole H3, the annular groove T4 can have a larger polishing liquid capacity and a larger aperture area, so that more polishing liquid SL can be provided for the edge portion PR of the polishing pad 802 in the later stage of the service life of the polishing pad 802.

[0050] In summary, the present invention provides a chemical mechanical polishing apparatus and a polishing pad for a chemical mechanical polishing apparatus. The polishing pad is provided with an edge groove at the edge portion, which exposes the upper portion in the initial stage of the service life of the polishing pad and exposes the lower portion with a larger aperture area and a larger capacity in the later stage of the service life. In contrast, the central portion of the polishing pad is provided with a central groove, and the upper and lower portions thereof are substantially equal in terms of aperture area and capacity. In the early stage of the service life of the polishing pad, the upper portions of the central groove and the edge groove are exposed with substantially the same aperture area, and substantially the same amount of polishing liquid can be provided in the central portion and the edge portion of the polishing pad. In the later stage of the service life of the polishing pad, the central groove is still exposed with the same aperture area, while the lower portion of the edge groove is exposed with a larger aperture area. As a result, the amount of polishing liquid provided to the edge portion of the polishing pad can be increased. In the later stage of the service life of the polishing pad, a structure concave from the edge to the center may be generated due to non-uniform dressing, which may cause the polishing liquid to flow from the edge portion to the central portion of the polishing pad. By increasing the amount of polishing liquid provided to the edge portion in the later stage of the service life of the polishing pad, the decrease in the amount of polishing liquid in the edge portion of the polishing pad caused by the shape factor can be compensated. Therefore, even in the later stage of the service life of the polishing pad, substantially the same amount of polishing liquid can be maintained in the central portion and the edge portion. In this way, a substantially equal polishing rate can be ensured in the central portion and the edge portion from the early stage to the later stage of the service life of the polishing pad. In other words, the uniformity of polishing can be ensured throughout the service life of the polishing pad.

[0051] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A polishing pad for use in a chemical mechanical polishing device, characterized in that: include: A central portion, provided with a central center groove; as well as At least one edge groove is arranged around the edge portion of the central portion, wherein the at least one edge groove is arranged along an annular contour, and the lower portion of the at least one edge groove is larger in caliber area than the upper portion of the at least one edge groove, and is different in shape from the upper portion of the at least one edge groove.

2. The polishing pad according to claim 1, characterized in that The upper and lower parts of the central groove are substantially the same in shape, caliber and area.

3. The polishing pad according to claim 1, characterized in that The caliber width of the upper portion of the at least one edge groove is equal to or smaller than the caliber width of the central groove.

4. The polishing pad according to claim 1, characterized in that The at least one edge groove comprises a plurality of edge grooves dispersedly arranged along the annular contour, the upper portion of each edge groove is a straight hole, and the lower portion of each edge groove is a U-shaped hole connected to the straight hole at one end.

5. The polishing pad according to claim 4, characterized in that Each edge groove formed by combining the straight hole and the U-shaped hole is inclined from a vertical direction with the top facing the central axis of the polishing pad, and the central groove extends into the polishing pad along the vertical direction.

6. The polishing pad according to claim 1, wherein: The at least one edge groove comprises an annular edge groove, the upper portion of which is a straight groove extending continuously along the annular profile, and the lower portion of which is a U-shaped groove extending continuously along the annular profile and connected to the straight groove at one end.

7. The polishing pad according to claim 6, characterized in that The annular edge groove formed by combining the straight groove and the U-shaped groove is inclined from a vertical direction with the top thereof facing the central axis of the polishing pad, and the central groove extends into the polishing pad along the vertical direction.

8. The polishing pad according to claim 1, wherein: The at least one edge groove includes an annular edge groove, the upper portion of the annular edge groove is a double annular groove extending continuously along the annular contour, the lower portion of the annular edge groove includes a plurality of holes separately arranged along the annular contour, and the plurality of holes overlap and are connected to the double annular grooves respectively.

9. The polishing pad according to claim 1, characterized in that: The at least one edge groove comprises an annular edge groove, the upper portion of the annular edge groove is a double annular groove extending continuously along the annular contour, the lower portion of the annular edge groove is an annular groove extending continuously along the annular contour, and the annular grooves overlap and are connected to the double annular grooves.

10. A chemical mechanical polishing device, characterized in that: include: Carrier; A polishing pad is placed on the carrier and includes a central portion and an edge portion surrounding the central portion, wherein the central portion is provided with a central groove, and the edge portion is provided with at least one edge groove, the at least one edge groove is provided along an annular contour, and the lower portion of the at least one edge groove is larger in aperture area and capacity than the upper portion of the at least one edge groove, and is different in shape from the upper portion of the at least one edge groove; a wafer chuck configured to absorb and control a wafer so that the wafer contacts the polishing pad from above; as well as The polishing liquid providing device is configured to provide the polishing liquid to the surface of the polishing pad from above.

11. The chemical mechanical polishing device according to claim 10, characterized in that: Also includes: The polishing pad conditioning device contacts the polishing pad from above and is configured to remove polishing residues and condition the surface of the polishing pad through a rotating disk.

12. The chemical mechanical polishing device according to claim 10, characterized in that: At the end of the service life of the polishing pad, the upper portion of the at least one edge groove is removed and the lower portion is exposed.

13. The chemical mechanical polishing device according to claim 10, characterized in that: The opening area of ​​the groove of the edge portion of the polishing pad at the end of its service life is greater than the opening area of ​​the groove of the edge portion of the polishing pad at the beginning of its service life.

14. The chemical mechanical polishing device according to claim 10, characterized in that: The central portion of the polishing pad maintains substantially the same aperture area at an early stage and a later stage of the service life of the polishing pad.