A plasma thin film deposition device with central air extraction

Abstract

The present invention relates to a plasma thin film deposition device with central air extraction, which includes a reaction chamber, a hot stage, a hot stage base, a lift, an air extraction device, and first and second elastic pipelines; the hot stage is divided into a bearing part and a support part vertically arranged in the middle of the bottom surface of the bearing part; there is a first gap between the bearing part and the inner side of the reaction chamber; the bottom end of the support part extends out of the bottom of the reaction chamber and is fixedly connected to the hot stage base, and there is a second gap between the support part and the bottom of the reaction chamber; the lift drives the hot stage base to move up and down in a direction perpendicular to the bearing part to drive the bearing part to move up and down; the first elastic pipeline is sleeved outside the extending part of the bearing part and is hermetically fixedly connected between the bottom of the reaction chamber and the hot stage base, and the top surface of the hot stage base is fixedly connected to the air extraction device through the second elastic pipeline; the hot stage base is provided with more than one through hole, and the through hole communicates the first elastic pipeline and the second elastic pipeline to form an air extraction channel. The present invention effectively solves the problem of edge effect and makes the film thickness of the thin film uniform.

Description

Technical Field

[0001] The present invention relates to the technical field of chemical vapor deposition, and particularly to a plasma thin film deposition device with central air extraction. Background Art

[0002] Chemical Vapor Deposition (CVD) technology is the main technology used to prepare high-purity and high-performance solid thin films. A typical CVD process is a method of introducing one or more vapor source atoms or molecules into a chamber, where chemical reactions occur under the action of external energy and a desired thin film is formed on the surface of a wafer. Due to the advantages of a wide film-forming range and good reproducibility of CVD technology, it is widely used in various film-forming forms.

[0003] As Figure 1 shown, in the existing plasma thin film deposition device, the air inlet is arranged above the center of the hot stage, and the top of the hot stage serves as a carrier for the wafer and also has a heating function. Its reaction chamber generally uses single-sided air extraction, that is, the air extraction port is arranged on the side of the hot stage, which will cause the edge effect to occur. As Figure 2 shown, the edge effect refers to the phenomenon that the gas flow dynamics and heat distribution at the edge of the thin film are different from those in the central region, resulting in uneven deposition rate and thin film quality. The uniformity of the thin film deposition thickness is an important index for measuring the thin film quality. Summary of the Invention

[0004] In view of this, the present invention provides a plasma thin film deposition device with central air extraction, which makes the gas distribution in the reaction chamber more uniform, effectively solves the edge effect problem, and makes the film thickness more uniform.

[0005] The present invention is achieved through the following technical solutions: A plasma thin film deposition device with central air extraction, comprising a reaction chamber, a hot stage, a hot stage base, a lift, an air extraction device, a first elastic pipeline, and a second elastic pipeline; The hot stage is divided into a bearing part and a support part vertically arranged in the middle of the bottom surface of the bearing part from top to bottom; The bearing part is suspended and embedded in the reaction chamber, and the bearing part is used to carry wafers. There is a first gap between the bearing part and the inner side of the reaction chamber; The bottom end of the support part extends out of the bottom of the reaction chamber and is fixedly connected to the hot stage base. There is a second gap between the support part and the bottom of the reaction chamber; An air inlet is provided at the top of the reaction chamber, and the air inlet faces the middle of the bearing part; The hot stage base is fixedly connected to the lift, and the lift drives the hot stage base to move up and down in a direction perpendicular to the bearing part, thereby driving the bearing part to move up and down; The first elastic pipeline is sleeved outside the extending part of the bearing part and is hermetically fixedly connected between the bottom of the reaction chamber and the hot stage base. The top surface of the hot stage base is fixedly connected to the air extraction device through the second elastic pipeline; The hot stage base is provided with more than one through hole, and the through hole communicates the first elastic pipeline and the second elastic pipeline; The first gap, the second gap, the first elastic pipeline, the through hole, and the second elastic pipeline form an air extraction channel.

[0006] Further, the hot stage base moves up and down, driving the first elastic pipeline and the second elastic pipeline to perform telescopic movement in the up and down direction, and the total length of the first elastic pipeline and the second elastic pipeline remains unchanged.

[0007] Further, the bottom end of the extending part of the support part is fixedly connected to the middle of the hot stage base. The hot stage base is provided with a wire passing hole, and the wire passing hole is used for leading out the hot stage cable; The wire passing hole is not communicated with the first elastic pipeline and the second elastic pipeline.

[0008] Further, several through holes are evenly arranged around the middle of the hot stage; The wire passing hole is arranged between any two through holes.

[0009] Further, the support part, the first elastic pipeline, the second elastic pipeline, and the hot stage base are coaxial.

[0010] Further, both the first elastic pipeline and the second elastic pipeline are made of metal bellows.

[0011] Compared with the existing technology, the beneficial effects of the present invention are:

[0012] 1. In the present invention, the support part is vertically arranged in the middle of the hot stage bearing part, the first elastic pipeline is sleeved outside the extending part of the hot stage, and is communicated with the second elastic pipeline through the through hole of the hot stage base. The first gap and the second gap enable the gas to be evenly extracted from the middle of the bearing part, avoiding the edge effect caused by side air extraction in the existing technology, making the gas distribution in the reaction chamber uniform, and thus the film thickness is more uniform.

[0013] 2. The present invention adopts an upper and lower double elastic sealing pipeline design and integrates a lifting function, so that during the entire deposition reaction process, while the hot stage moves up and down, the length of the air extraction channel remains unchanged, ensuring that the air extraction rate remains unchanged and further ensuring the uniformity of the thin film.

[0014] 3. The wire threading hole of the present invention only communicates with the middle and the periphery of the hot stage base, and does not communicate with the through hole, nor does it communicate with the first elastic pipeline and the second elastic pipeline, which can ensure the airtightness of the entire air extraction channel while leading out the hot stage cable. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a schematic structural diagram of an existing deposition device.

[0016] Figure 2 It is a gas distribution diagram of the reaction chamber of an existing deposition device.

[0017] Figure 3 It is a schematic structural diagram of the present invention.

[0018] Figure 4 It is a working principle diagram of the present invention.

[0019] Figure 5 It is a gas distribution diagram of the deposition reaction chamber of the present invention.

[0020] Figure 6 It is a schematic connection diagram of the corrugated pipe and the lifting seat of the present invention.

[0021] Figure 7 It is an axonometric view of the lifting seat of the present invention.

[0022] Among them, 1 - reaction chamber, 2 - upper cavity, 3 - hot stage, 3 - 1 - bearing part, 3 - 2 - supporting part, 4 - first elastic pipeline, 5 - hot stage cable, 6 - elevator, 7 - second elastic pipeline, 8 - hot stage base, 9 - through hole, 10 - wire threading hole. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0023] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0024] The present invention provides a plasma thin film deposition device with central air extraction, as Figure 3 shown. The deposition device includes a reaction chamber 1, a hot stage 3, a hot stage base 8, an air extraction device, an elevator 6, a first elastic pipeline 4 and a second elastic pipeline 7.

[0025] The hot stage 3 is divided into a bearing part 3-1 and a supporting part 3-2 from top to bottom. The supporting part 3-2 is vertically arranged in the middle of the bottom surface of the bearing part 3-1. The bearing part 3-1 is suspended and embedded in the reaction chamber 1, and the bearing part 3-1 is used to carry the wafer. The bottom end of the supporting part 3-2 extends out of the bottom of the reaction chamber 1, and the bottom end of the supporting part 3-2 is fixedly connected to the top of the hot stage base 8. The side of the hot stage base 8 is fixedly connected to the elevator 6. There is a circumferential first gap between the edge of the bearing part 3-1 and the inner side of the reaction chamber 1, and a circumferential second gap between the edge of the supporting part 3-2 and the bottom of the reaction chamber 1. Since the supporting part 3-2 is arranged in the middle of the bottom surface of the bearing part 3-1, the second gap between the supporting part 3-2 and the bottom of the reaction chamber 1 is also in the middle of the bearing part 3-1.

[0026] An upper cavity 2 is provided at the top of the reaction chamber 1 to seal the reaction chamber 1. The upper cavity 2 is provided with an air inlet, which is located above the bearing part 3-1 and the air inlet faces the middle of the bearing part 3-1. Specifically, during implementation, the wafer is placed in the middle of the upper surface of the bearing part 3-1 to ensure uniform air flow around the wafer.

[0027] The first elastic pipeline 4 is coaxially sleeved outside the extending part of the supporting part 3-2, and is hermetically and fixedly connected between the bottom of the reaction chamber 1 and the hot stage base 8. Specifically, the extending part of the supporting part 3-2 is arranged inside the first elastic pipeline 4. The top of the first elastic pipeline 4 is hermetically and fixedly connected to the bottom of the reaction chamber 1, and the bottom of the first elastic pipeline 4 is hermetically and fixedly connected to the top of the hot stage base 8.

[0028] The hot stage base 8 is fixedly connected to the pumping device through the second elastic pipeline 7. Specifically, the second elastic pipeline 7 is coaxial with the first elastic pipeline 4. The top of the second elastic pipeline 7 is hermetically and fixedly connected to the bottom of the hot stage base 8, and the bottom of the second elastic pipeline 7 is hermetically and fixedly connected to the pumping device.

[0029] The hot stage base 8 is provided with more than one through hole 9, and the through hole 9 penetrates through the top and bottom of the hot stage base 8, that is, the through hole 9 communicates the first elastic pipeline 4 and the second elastic pipeline 7. As Figure 4 shown, the first gap, the second gap, the first elastic pipeline 4, the through hole 9, and the second elastic pipeline 7 form a closed pumping channel. Since the supporting part 3-2 is arranged in the middle of the bearing part 3-1, when the pumping device works, the gas uniformly converges from the first gap between the bearing part 3-1 and the reaction chamber 1 to the second gap between the middle supporting part 3-2 and the bottom of the reaction chamber 1, and then is pumped out through the first elastic pipeline 4, the through hole 9, and the second elastic pipeline 7 to realize central pumping. As Figure 5 shown, it ensures the uniform gas distribution around the wafer and effectively solves the edge effect.

[0030] The lift 6 drives the hot stage base 8 to move up and down in a direction perpendicular to the carrier table of the carrier part 3-1, so as to drive the carrier part 3-1 to move up and down in the reaction chamber 1 through the support part 3-2, making the chemical vapor deposition reaction more uniform; at the same time, the first elastic pipeline 4 and the second elastic pipeline 7 expand and contract along the lifting direction. Specifically, when the hot stage base 8 moves upward, the first elastic pipeline 4 is compressed accordingly, and the second elastic pipeline 7 elongates accordingly; when the hot stage base 8 moves downward, the first elastic pipeline 4 elongates accordingly, and the second elastic pipeline 7 is compressed accordingly; that is, during the lifting movement of the hot stage base 8, the total length of the first elastic pipeline 4 and the second elastic pipeline 7 remains unchanged, ensuring that the length of the air extraction channel remains unchanged, that is, the distance between the air extraction device and the reaction chamber 1 remains unchanged, so that the air extraction rate is always consistent, further ensuring the uniformity of the film reaction on the wafer. Both the first elastic pipeline 4 and the second elastic pipeline 7 can adopt metal bellows.

[0031] In specific implementation, the bottom end of the extending part of the hot stage 3 is fixedly connected to the groove arranged in the middle of the hot stage base 8, and a wire threading hole 10 is arranged inside the hot stage base 8, and the wire threading hole 10 is used for leading out the hot stage cable 5. In this embodiment, as Figure 6 , 7 shown, a plurality of through holes 9 are evenly arranged around the middle of the hot stage 3; the wire threading hole 10 is arranged between any two through holes 9, the wire threading hole 10 is not communicated with the through holes 9, the axis of the wire threading hole 10 can be perpendicular to the axis of the support part 3-2, one end is communicated with the groove in the middle of the hot stage base 8, and the other end penetrates through the side wall end face of the hot stage base 8, that is, the wire threading hole 10 is not communicated with the first elastic pipeline 4 and the second elastic pipeline 7. The hot stage cable 5 extends out from the bottom of the support part 3-2 and is led out from the wire threading hole 10 to the periphery of the hot stage base 8. The wire threading hole 10 only communicates the middle and the periphery of the hot stage base 8, the wire threading hole 10 is not communicated with the through holes 9, and the wire threading hole 10 is not communicated with the first elastic pipeline 4 and the second elastic pipeline 7, which can ensure the airtightness of the entire air extraction channel while leading out the hot stage cable 5.

[0032] For the plasma thin film deposition equipment provided by the present invention, the air extraction channel is arranged in the middle of the carrier part 3-1. When the air extraction device extracts air, the gas is evenly extracted from the middle, avoiding the side extraction effect in the prior art, making the gas distribution in the reaction chamber 1 more uniform and the film thickness more uniform; adopting the upper and lower double elastic sealing pipeline design and integrating and upgrading functions, during the lifting movement of the hot stage 3 in the whole deposition reaction process, the length of the air extraction channel remains unchanged, ensuring that the air extraction rate remains unchanged, and further ensuring the uniformity of the thin film.

[0033] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, and improvements made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A plasma thin film deposition device with central air extraction, characterized in that, It includes a reaction chamber, a hot stage, a hot stage base, a lift, a pumping device, a first flexible pipeline, and a second flexible pipeline; The hot stage is divided into a loading part and a supporting part vertically arranged in the middle of the bottom surface of the loading part from top to bottom; the loading part is suspended and embedded in the reaction chamber, and the loading part is used to carry the wafer. There is a first gap between the loading part and the inner side of the reaction chamber; the bottom end of the supporting part extends out of the bottom of the reaction chamber and is fixedly connected to the hot stage base. There is a second gap between the supporting part and the bottom of the reaction chamber; an air inlet is provided at the top of the reaction chamber, and the air inlet faces the middle of the loading part; the hot stage base is fixedly connected to the lift, and the lift drives the hot stage base to move up and down in a direction perpendicular to the loading part, thereby driving the loading part to move up and down; The first flexible pipeline is sleeved outside the extending part of the loading part and is hermetically fixed between the bottom of the reaction chamber and the hot stage base. The top surface of the hot stage base is fixedly connected to the pumping device through the second flexible pipeline; the hot stage base is provided with more than one through hole, and the through hole communicates the first flexible pipeline and the second flexible pipeline; the first gap, the second gap, the first flexible pipeline, the through hole, and the second flexible pipeline form an air extraction channel.

2. The plasma thin film deposition device with central air extraction according to claim 1, characterized in that, When the hot stage base moves up and down, it drives the first flexible pipeline and the second flexible pipeline to do telescopic movement in the up and down direction, and the total length of the first flexible pipeline and the second flexible pipeline remains unchanged.

3. The plasma thin film deposition device with central air extraction according to claim 2, wherein, The bottom end of the extending part of the supporting part is fixedly connected to the middle of the hot stage base. The hot stage base is provided with a wire passing hole, and the wire passing hole is used for leading out the hot stage cable; the wire passing hole is not communicated with the first flexible pipeline and the second flexible pipeline.

4. The plasma thin film deposition device with central air extraction according to claim 3, characterized in that, A number of through holes are evenly arranged around the middle of the hot stage; the wire passing hole is arranged between any two through holes.

5. The plasma thin film deposition device with central air extraction according to claim 3, characterized in that, The supporting part, the first flexible pipeline, the second flexible pipeline, and the hot stage base are coaxial.

6. The plasma thin film deposition device with central air extraction according to any one of claims 1-5, characterized in that, Both the first flexible pipeline and the second flexible pipeline are made of metal bellows.

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