Seed crystal alignment device and method for growing gallium oxide single crystal by edge-defined film-fed growth method

Abstract

The invention discloses a seed crystal alignment device and method for growing a gallium oxide single crystal by an edge-defined film-fed growth method, and belongs to the technical field of single crystal growth by the edge-defined film-fed growth method. A clamping groove is formed in the right middle of the bottom of the seed crystal alignment device, a strip-shaped groove is formed in the right middle of the top of the seed crystal alignment device, and a square groove is formed in the bottom of the strip-shaped groove and located in the right middle of the strip-shaped groove. A clamping groove in the bottom of the seed crystal alignment device is clamped on the surface of a mold, the seed crystal slowly descends to a position very close to the position above a strip-shaped groove, then the angle of the seed crystal is adjusted till the seed crystal can enter the strip-shaped groove, the required growth face of the seed crystal is parallel to the strip-shaped groove, and finally the position of the seed crystal in the horizontal direction is adjusted so that the seed crystal can enter a square groove. And finally, raising the seed crystal, taking out the device, and finishing the alignment of the seed crystal. According to the seed crystal alignment device and method, the seed crystal can be effectively aligned, so that the surface type required by the seed crystal is parallel to the long side of the mold, and meanwhile, the seed crystal is positioned at the dead center of the mold, so that the surface type of the grown gallium oxide single crystal is accurate.

Description

Technical Field

[0001] The present invention relates to the technical field of single crystal growth by the edge-defined film-fed growth (EFG) method, and particularly to a seed crystal alignment device and method for growing gallium oxide single crystals by the EFG method. Background Art

[0002] The edge-defined film-fed growth (EFG) method is one of the methods for artificially preparing single crystal materials from a melt, that is, the edge-defined film-fed growth technology. This method is usually used for the shaped growth of single crystal materials. It places the melt in a mold with a capillary slit. The melt rises to the top of the mold by capillary action, forms a thin film and spreads around, and is induced to crystallize by a seed crystal at the same time. The edge at the top of the mold can control the shape of the crystal. Therefore, during the growth of a single crystal by the EFG method, the position, direction, angle, etc. of the seed crystal placement are particularly important.

[0003] During the growth of a crystal with a special surface type by the EFG method, such as the 100 plane of a gallium oxide single crystal, it is usually necessary to ensure that the 100 plane of the seed crystal is parallel to the long side of the mold, and at the same time, the seed crystal needs to be at the exact center position of the mold. However, currently during furnace loading, there is a lack of an effective method to align the seed crystal. Usually, the direction of the seed crystal is judged by the naked eye. However, due to factors such as the relatively transparent color of the seed crystal and the reflection of the iridium mold, the placement angle of the seed crystal is prone to deviation, resulting in a deviation in the crystal surface type of the grown crystal. The surface of the mold is generally rectangular. When the length-width ratio is large and the large surface direction of the crystal is offset, the grown crystal cannot be processed into wafers of the required size, causing waste.

[0004] Therefore, the existing technology still needs to be improved and developed. Summary of the Invention

[0005] In view of the above deficiencies of the existing technology, the purpose of the present invention is to provide a seed crystal alignment device and method for growing gallium oxide single crystals by the EFG method, aiming to solve the problem that there is a lack of an effective method to align the seed crystal in the existing technology, resulting in an inaccurate surface type of the grown gallium oxide single crystal.

[0006] The technical solution of the present invention is as follows:

[0007] In the first aspect of the present invention, a seed crystal alignment device for growing gallium oxide single crystals by the EFG method is provided. Among them, a card slot is provided in the exact middle of the bottom of the seed crystal alignment device, a strip-shaped groove is provided in the exact middle of the top of the seed crystal alignment device, and a square groove is provided at the bottom of the strip-shaped groove and in the exact middle of the strip-shaped groove.

[0008] Further, the size of the card slot is the same as the surface specification of the mold used for growing gallium oxide single crystals, so that the seed crystal alignment device is clamped on the mold through the card slot.

[0009] Further, the shape of the mold is a cuboid, and the shape of the surface of the mold is a rectangle.

[0010] Further, the shape of the seed crystal is a cuboid, and the width of the seed crystal is the same as the width of the strip-shaped groove.

[0011] Further, the square groove is slightly larger than the seed crystal.

[0012] Further, the outer shape of the seed crystal alignment device is a cuboid.

[0013] In a second aspect of the present invention, there is provided a method for aligning a seed crystal for growing gallium oxide single crystal by the edge-defined film-fed growth (EFG) method, which includes the steps of:

[0014] Providing a growth device for growing gallium oxide single crystal by the EFG method, the growth device including a crucible and a mold located in the crucible;

[0015] Clamping the seed crystal alignment device for growing gallium oxide single crystal by the EFG method according to the present invention on the mold through a card slot;

[0016] Lowering the seed crystal and adjusting the angle of the seed crystal until the seed crystal enters the strip-shaped groove, and then adjusting the position of the seed crystal in the horizontal direction so that the seed crystal enters the square groove;

[0017] Finally, keeping the angle and the position in the horizontal direction of the seed crystal unchanged, raising the seed crystal, removing the seed crystal alignment device, and completing the alignment of the seed crystal.

[0018] In a third aspect of the present invention, there is provided a method for growing gallium oxide single crystal by the EFG method, which includes the steps of:

[0019] First, performing seed crystal alignment by using the method for aligning a seed crystal for growing gallium oxide single crystal by the EFG method according to the present invention;

[0020] Then, keeping the angle and the position in the horizontal direction of the seed crystal unchanged, lowering the seed crystal, after the seed crystal contacts the melt on the surface of the mold, successively performing crystal seeding, necking, shoulder formation, and equal diameter growth to obtain a gallium oxide single crystal with a desired surface shape.

[0021] Further, the surface shape of the gallium oxide single crystal is a 100 plane.

[0022] Further, the material of the mold is iridium gold.

[0023] Beneficial effects: The present invention provides a seed crystal alignment device for assisting seed crystal alignment. A clamping groove is provided at the bottom of the device, and a strip-shaped groove and a square groove are provided at the top. The clamping groove at the bottom is determined according to the mold used for crystal growth, and the size of the clamping groove is the same as the surface specification of the mold, so that the device can be clamped on the mold in the crucible through the clamping groove, which can ensure that the clamping groove of the device is parallel to the long side of the mold; there is a strip-shaped groove in the exact middle of the top of the device, and the seed crystal can descend and adjust the angle so that it can enter the strip-shaped groove. When the seed crystal can enter the strip-shaped groove, it means that the seed crystal is parallel to the strip-shaped groove, and then the seed crystal is parallel to the long side of the mold, which can ensure the accuracy of the grown surface shape; a square groove slightly larger than the seed crystal is provided in the strip-shaped groove, and the square groove is located in the exact middle of the strip-shaped groove. When the seed crystal can enter the square groove, it can be determined that the seed crystal is located at the exact center of the mold. Through the above device, the seed crystal can be effectively aligned, so as to ensure that the required surface shape of the seed crystal is parallel to the long side of the mold, and at the same time the seed crystal is at the exact center position of the mold, thereby ensuring the accuracy of the grown gallium oxide single crystal surface shape. In addition, the strip-shaped groove and the square groove at the top can be designed at any angle to cope with different seed crystal shapes and application scenarios, and can be made into a color convenient for observation. Brief Description of the Drawings

[0024] Figure 1 It is a schematic structural diagram of a seed crystal alignment device for growing gallium oxide single crystal by the edge-defined film-fed growth (EFG) method provided by an embodiment of the present invention; in the figure, 1 is a clamping groove, 2 is a strip-shaped groove, and 3 is a square groove. Detailed Embodiments

[0025] The present invention provides a seed crystal alignment device and method for growing gallium oxide single crystal by the edge-defined film-fed growth (EFG) method. To make the purpose, technical solution and effects of the present invention clearer and more definite, the present invention is further described in detail below. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0026] During the process of growing gallium oxide single crystal by the edge-defined film-fed growth (EFG) method, the position, direction, angle, etc. of the seed crystal are particularly important. Especially during the process of growing gallium oxide single crystal with a special surface shape by the edge-defined film-fed growth (EFG) method, such as the 100 plane of gallium oxide single crystal, it is usually necessary to ensure that the 100 plane of the seed crystal is parallel to the long side of the mold, and at the same time the seed crystal needs to be at the exact center position of the mold. However, currently during furnace loading, the direction of the seed crystal is usually judged by the naked eye. Due to factors such as the relatively transparent color of the seed crystal and the reflection of the iridium gold mold, the placement angle of the seed crystal is likely to be off, resulting in an off surface shape of the grown crystal. The surface of the mold is generally rectangular. When the length-width ratio is large and the large surface direction of the crystal is offset, the grown crystal cannot be processed into wafers of the required size, causing waste.

[0027] Based on this, an embodiment of the present invention provides a seed crystal alignment device for growing gallium oxide single crystal by the edge-defined film-fed growth (EFG) method, asFigure 1 As shown, a clamping groove 1 is provided at the exact middle of the bottom of the seed crystal alignment device, a strip-shaped groove 2 is provided at the exact middle of the top of the seed crystal alignment device, and a square groove 3 is provided at the exact middle of the bottom of the strip-shaped groove 2 and located within the strip-shaped groove.

[0028] Further, the size of the clamping groove 1 is the same as the surface specification of the mold used for the growth of gallium oxide single crystal, so that the seed crystal alignment device is clamped on the mold through the clamping groove 1.

[0029] Further, the shape of the mold is a cuboid, and the shape of the mold surface is a rectangle.

[0030] Further, the material of the mold is iridium.

[0031] Further, the shape of the seed crystal is a cuboid, and the width of the seed crystal is the same as the width of the strip-shaped groove 2.

[0032] Further, the square groove 3 is slightly larger than the seed crystal.

[0033] Further, the outer shape of the seed crystal alignment device is a cuboid.

[0034] In the embodiment of the present invention, the clamping groove 1 at the bottom of the seed crystal alignment device is clamped on the mold surface, the seed crystal is slowly lowered to a position very close above the strip-shaped groove, and then the angle of the seed crystal is adjusted until the seed crystal can smoothly enter the strip-shaped groove, so that the growth surface required by the seed crystal is parallel to the strip-shaped groove. Finally, the position of the seed crystal in the horizontal direction is adjusted so that it can enter the square groove, ensuring that the seed crystal is at the exact center of the mold. Finally, the seed crystal is raised, and the device is removed to complete the seed crystal alignment. Through the above seed crystal alignment device, the seed crystal can be effectively aligned, thereby ensuring that the required surface shape of the seed crystal is parallel to the long side of the mold, and at the same time, the seed crystal is at the exact center position of the mold, further ensuring the accurate surface shape of the grown gallium oxide single crystal.

[0035] For the growth of gallium oxide single crystal with other surface shapes by the edge-defined film-fed growth (EFG) method, the strip-shaped groove and the square groove at the top can be designed at the required angles to improve the accuracy of surface shape growth.

[0036] The embodiment of the present invention provides a method for aligning a seed crystal for growing gallium oxide single crystal by the edge-defined film-fed growth (EFG) method, which includes the steps of:

[0037] Providing a growth device for growing gallium oxide single crystal by the edge-defined film-fed growth (EFG) method, where the growth device includes a crucible and a mold located within the crucible;

[0038] Clamping the seed crystal alignment device for growing gallium oxide single crystal according to the embodiment of the present invention on the mold through the clamping groove;

[0039] Lower the seed crystal and adjust the angle of the seed crystal until the seed crystal enters the strip groove. Then, adjust the position of the seed crystal in the horizontal direction so that the seed crystal enters the square groove.

[0040] Finally, keep the angle and the horizontal position of the seed crystal unchanged, raise the seed crystal, remove the seed crystal alignment device, and complete the seed crystal alignment.

[0041] Through the above seed crystal alignment method, the seed crystal alignment can be effectively achieved, so as to ensure that the required surface shape of the seed crystal is parallel to the long side of the mold, and at the same time, the seed crystal is at the center of the mold, thereby ensuring the accurate surface shape of the grown gallium oxide single crystal.

[0042] An embodiment of the present invention provides a growth method for growing gallium oxide single crystals by the edge-defined film-fed growth (EFG) method, which includes the steps of:

[0043] First, perform seed crystal alignment by using the seed crystal alignment method for growing gallium oxide single crystals by the EFG method described in the embodiment of the present invention.

[0044] Then, keep the angle and the horizontal position of the seed crystal unchanged, lower the seed crystal, and after the seed crystal contacts the melt on the surface of the mold, perform crystal seeding, necking, shoulder opening, and equal diameter growth in sequence to obtain a gallium oxide single crystal with the required surface shape.

[0045] Through the above seed crystal alignment method, the seed crystal alignment can be effectively achieved, so as to ensure that the required surface shape of the seed crystal (such as the 100 plane of the seed crystal) is parallel to the long side of the mold, and at the same time, the seed crystal is at the center of the mold. Under the condition that the position, angle, etc. of the seed crystal placement are accurate, the growth of gallium oxide single crystals can be carried out to ensure that the grown gallium oxide single crystal with the required surface shape (such as a 100-plane gallium oxide single crystal) is obtained, and the accuracy rate of the surface shape of the grown gallium oxide single crystal is improved.

[0046] Further, the material of the mold is iridium.

[0047] In summary, the present invention provides a seed crystal alignment device and method for growing gallium oxide single crystals by the EFG method. By clamping the card slot of the seed crystal alignment device on the surface of the mold, slowly lowering the seed crystal to a very close position above the strip groove, and then adjusting the angle of the seed crystal until the seed crystal can smoothly enter the strip groove, so that the required growth surface of the seed crystal is parallel to the strip groove. Finally, adjust the position of the seed crystal in the horizontal direction so that it can enter the square groove to ensure that the seed crystal is at the center of the mold. Finally, raise the seed crystal, remove the device, and complete the seed crystal alignment. Through the above seed crystal alignment device and method, the seed crystal can be effectively aligned, so as to ensure that the required surface shape of the seed crystal is parallel to the long side of the mold, and at the same time, the seed crystal is at the center of the mold, thereby ensuring the accurate surface shape of the grown gallium oxide single crystal.

[0048] It should be understood that the application of the present invention is not limited to the above examples. For those of ordinary skill in the art, improvements or modifications can be made according to the above description, and all such improvements and modifications shall fall within the protection scope of the appended claims of the present invention.

Claims

1. A seed crystal alignment device for growing gallium oxide single crystals by guided mode method, characterized in that: A clamping groove is arranged in the middle of the bottom of the seed crystal alignment device, a strip groove is arranged in the middle of the top of the seed crystal alignment device, and a square groove is arranged at the bottom of the strip groove and in the middle of the strip groove.

2. The seed crystal alignment device for growing gallium oxide single crystal by guided mode method according to claim 1, characterized in that: The size of the clamping groove is the same as the surface specification of the mold used for growing the gallium oxide single crystal, so that the seed crystal alignment device is clamped on the mold through the clamping groove.

3. The seed crystal alignment device for growing gallium oxide single crystal by guided mode method according to claim 2, characterized in that: The shape of the mold is a cuboid, and the shape of the mold surface is a rectangle.

4. The seed crystal alignment device for growing gallium oxide single crystal by guided mode method according to claim 1, characterized in that: The seed crystal is in the shape of a cuboid, and the width of the seed crystal is the same as the width of the strip-shaped groove.

5. The seed crystal alignment device for growing gallium oxide single crystal by guided mode method according to claim 1, characterized in that: The square groove is slightly larger than the seed crystal.

6. The seed crystal alignment device for growing gallium oxide single crystal by guided mode method according to claim 1, characterized in that: The seed crystal alignment device has a rectangular shape.

7. A seed crystal alignment method for growing gallium oxide single crystals by guided mode method, characterized in that: Includes steps: A growth device for growing gallium oxide single crystal by a guided mold method is provided, wherein the growth device comprises a crucible and a mold located in the crucible; The seed crystal alignment device for growing gallium oxide single crystal by guided mold method according to any one of claims 1 to 6 is clamped on the mold through the clamping groove; Lower the seed crystal and adjust the angle of the seed crystal until the seed crystal enters the strip-shaped groove, then adjust the horizontal position of the seed crystal so that the seed crystal enters the square groove; Finally, keep the angle and horizontal position of the seed crystal unchanged, lift the seed crystal, take out the seed crystal alignment device, and complete the seed crystal alignment.

8. A method for growing gallium oxide single crystals by a guided mode method, characterized in that: Includes steps: Firstly, the seed crystal alignment method for growing gallium oxide single crystal by guided mode method as claimed in claim 7 is used to align the seed crystal; Then, the angle and horizontal position of the seed crystal are kept unchanged, and the seed crystal is lowered to make the seed crystal contact the melt on the surface of the mold, and then seeding, necking, shouldering and equal-diameter growth are carried out in sequence to obtain a gallium oxide single crystal with the required surface shape.

9. The method for growing gallium oxide single crystals by the guided mode method according to claim 8, characterized in that: The face shape of the gallium oxide single crystal is 100 face.

10. The method for growing gallium oxide single crystals by the guided mode method according to claim 8, characterized in that: The material of the mold is iridium.

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