Silicon carbide crystal growth device for improving spiral dislocation defect

By setting graphite partitions in the silicon carbide crystal growth apparatus to form an arithmetic sequence, the step flow growth mode is ensured, the problem of spiral dislocation multiplication in silicon carbide crystals is solved, and the crystal quality is improved.

CN223660293UActive Publication Date: 2025-12-12GUANGZHOU SUMMIT CRYSTAL SEMICON CO LTD
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Patent Information

Application Number
CN202423323135.X
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-12-31
Publication Date
2025-12-12
Estimated Expiration
2034-12-31

AI Technical Summary

Technical Problem

During the growth of silicon carbide crystals, factors such as the inheritance of seed crystal spiral dislocations, inclusions that appear during growth, and thermal stress in the temperature field can lead to the proliferation of spiral dislocations in silicon carbide crystals, affecting device performance and reliability.

Method used

A silicon carbide crystal growth apparatus for improving spiral dislocation defects is adopted. The apparatus includes a crucible body and multiple graphite partitions inside. The graphite partitions are evenly spaced at the bottom of the crucible, and their height gradually decreases from the seed crystal facet region to the region away from the facet region, forming an arithmetic sequence. The height of the silicon carbide powder also gradually decreases, constructing raw material partitions of different heights to ensure that the step flow growth mode is the main growth mode.

Benefits of technology

The stable step-flow growth mode promotes the transformation and movement of spiral dislocations, reduces the spiral dislocation density in the crystal, and improves the crystal quality.

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Abstract

The utility model provides a silicon carbide crystal growth device for improving the spiral dislocation defect. The silicon carbide crystal growth device comprises a crucible body and a plurality of graphite partition plates arranged in the crucible, and the graphite partition plates are arranged at the bottom of a raw material area of the crucible at equal intervals; the graphite clapboards are inserted into the silicon carbide powder at intervals, the heights of the graphite clapboards are in an arithmetic progression, so that the heights of the silicon carbide powder are also in an arithmetic progression, and the heights of the graphite clapboards and the silicon carbide powder in the corresponding areas are gradually reduced in the direction from the small surface area of the seed crystal to the direction far away from the small surface area. In the single crystal growth process, the silicon carbide powder in the graphite partition interlayer is heated to sublimate, and the distance between the surface of the silicon carbide powder and the growth surface of the seed crystal is reduced due to the height advantage of the silicon carbide powder in the graphite partition area with higher height, so that the growth component forms the component density advantage at the surface of the seed crystal in the area; the conversion and movement processes of screw dislocation in the crystal are effectively promoted, and the crystal quality is improved.
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