A gallium oxide semiconductor material based on a structured substrate and a growth method thereof

Abstract

The present invention relates to the field of semiconductor technology, and in particular to a gallium oxide semiconductor material based on a structured substrate and a growth method thereof. The method for growing a gallium oxide semiconductor material based on a structured substrate provided by the present invention comprises growing a GaN nucleation layer, growing a GaN buffer layer on the surface of a sapphire substrate or a silicon substrate, and then performing high-temperature recrystallization to form an isolated island-shaped GaN nucleation layer; then growing a composite buffer layer, annealing the GaN nucleation layer at high temperature in the presence of oxygen, oxidizing the surface of the discrete island structure, and finally growing gallium oxide, growing a gallium oxide nucleation layer and an epitaxial film on the surface of the structured composite buffer layer structure. By optimizing the gallium oxide semiconductor material growth method, lattice mismatch and thermal expansion coefficient differences can be effectively reduced, dislocation defects can be significantly reduced, and a high-quality gallium oxide epitaxial layer can be obtained, thereby improving the crystal structure quality and performance of the material.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a gallium oxide semiconductor material based on a structured substrate and a growth method thereof. Background Art

[0002] Gallium oxide (Ga2O3), a new wide-bandgap semiconductor material, boasts a wide bandgap, high breakdown field strength, and a large Baliga figure of merit. It holds broad application prospects in power electronics and deep-ultraviolet optoelectronics. However, the difficulty of growing Ga2O3 single crystals and their high dislocation density severely restrict improvements in device performance.

[0003] Currently, epitaxial growth of gallium oxide thin films primarily utilizes two methods: homoepitaxial and heteroepitaxial. Homoepitaxial growth requires a single-crystal gallium oxide substrate, which is costly. Heterepitaxial growth, on the other hand, faces challenges with lattice mismatch and large differences in thermal expansion coefficients, resulting in poor epitaxial layer quality and high dislocation density.

[0004] Furthermore, while the use of patterned substrates holds promise for improving the quality of epitaxial layers, practical applications still face a series of challenges. For example, the patterned structure on the substrate surface can lead to uneven nucleation of the gallium oxide layer during growth, affecting the thickness uniformity and crystal quality of the film. Furthermore, the processing of patterned substrates is complex and costly, further limiting their large-scale application. Therefore, resolving these issues and improving the quality of gallium oxide epitaxial layers has become one of the bottlenecks hindering the widespread application of gallium oxide materials. There is an urgent need to provide a new method for growing gallium oxide semiconductor materials. Summary of the Invention

[0005] To address the aforementioned technical issues, the present invention provides a gallium oxide semiconductor material based on a structured substrate and a method for growing the same. This method, through an optimized growth process, effectively reduces lattice mismatch and thermal expansion coefficient differences, significantly reducing dislocation defects, resulting in a high-quality gallium oxide epitaxial layer and enhancing the material's crystal structure quality and performance.

[0006] In the first aspect, the present invention provides a method for growing a gallium oxide semiconductor material based on a structured substrate. The method comprises growing a GaN nucleation layer, growing a GaN buffer layer on the surface of a sapphire substrate or a silicon substrate, and then performing high-temperature recrystallization to form an isolated island-shaped GaN nucleation layer. A composite buffer layer is then grown, and the GaN nucleation layer is subjected to high-temperature annealing in the presence of oxygen, so that the surface of the discrete island structure is oxidized. Finally, gallium oxide is grown, and a gallium oxide nucleation layer and an epitaxial film are grown on the surface of the structured composite buffer layer structure. By optimizing the gallium oxide semiconductor material growth method, the lattice mismatch and thermal expansion coefficient difference can be effectively reduced, dislocation defects can be significantly reduced, a high-quality gallium oxide epitaxial layer can be obtained, and the crystal structure quality and performance of the material can be improved.

[0007] Specifically, the method for growing gallium oxide semiconductor material based on a structured substrate includes:

[0008] 1) GaN nucleation layer growth: A GaN buffer layer is grown on the surface of a sapphire substrate or a silicon substrate, and then recrystallized at high temperature to obtain an isolated island-shaped GaN nucleation layer.

[0009] 2) Preparation of composite buffer layer: The GaN nucleation layer is subjected to high-temperature annealing treatment in the presence of oxygen, and the surface of the discrete island structure is oxidized to obtain a structured composite buffer layer structure.

[0010] 3) Gallium oxide nucleation layer growth: growing a gallium oxide nucleation layer on the surface of the structured composite buffer layer structure.

[0011] 4) Gallium oxide epitaxial layer growth: growing a gallium oxide epitaxial layer on the surface of the gallium oxide nucleation layer.

[0012] Preferably, in step 1), the GaN crystal nucleus structure particles in the GaN nucleation layer have a horizontal size of 0.1-5 μm and a vertical size of 0.1-1 μm.

[0013] Preferably, in step 1), the thickness of the GaN buffer layer is 10-500 nm.

[0014] Preferably, in step 2), the surface of the structured composite buffer layer structure is an oxidized GaN layer.

[0015] More preferably, the thickness of the oxidized GaN layer is 1-100 nm.

[0016] More preferably, the thickness of the oxidized GaN layer is 50-100 nm.

[0017] Preferably, the growth method in steps 1), 3) and 4) comprises metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD) or hydride vapor phase epitaxy (HVPE).

[0018] Preferably, in step 1), the growth method of the GaN buffer layer includes metal organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE) or physical vapor deposition (PVD); the growth temperature is 500-650°C, the growth pressure is 30000-70000Pa, and the gallium source material flow rate is 60-120sccm.

[0019] More preferably, in step 1), the temperature of the high-temperature recrystallization is 1050-1100°C.

[0020] More preferably, in step 2), the processing temperature of the composite buffer layer is 900-1100° C., the chamber pressure is 30000-70000 Pa, and the oxygen flow rate is 1000-50000 sccm.

[0021] More preferably, in step 3), the gallium oxide nucleation layer is grown by metal organic chemical vapor deposition at a growth temperature of 600-900° C., a growth pressure of 80-120 Torr, and a source material flow rate of 90-120 sccm.

[0022] More preferably, in step 4), the gallium oxide epitaxial layer is grown by hydride vapor phase epitaxy at a growth temperature of 650-850° C., a growth pressure of 500-700 Torr, and a Ga / O precursor ratio of 0.1-0.2.

[0023] In a second aspect, the present invention provides a gallium oxide semiconductor material obtained by the above-mentioned method for growing gallium oxide semiconductor material based on a structured substrate.

[0024] The beneficial effects of the present invention are at least as follows: by introducing an in-situ composite structured buffer layer structure on the substrate, the present invention greatly simplifies the problems of complex process and high cost caused by the high-precision lithography and etching required for conventional patterned substrates, and the local statistical fluctuations of the in-situ structured composite substrate avoid the anisotropic stress caused by periodic patterning to a certain extent, which can effectively reduce the lattice mismatch and thermal expansion coefficient difference between the gallium oxide epitaxial layer and the substrate, thereby reducing the generation of dislocation defects and improving the quality of the epitaxial layer; by optimizing the nucleation layer growth process, the nucleation and growth process of the gallium oxide epitaxial layer can be further regulated to obtain high-quality gallium oxide semiconductor materials. DETAILED DESCRIPTION

[0025] To make the objectives, technical solutions, and advantages of the present invention more clear, the technical solutions of the present invention are described clearly and completely below. Obviously, the embodiments described are only some of the embodiments of the present invention, not all of them. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.

[0026] The endpoints of the ranges and any values ​​disclosed herein are not limited to the precise ranges or values, and these ranges or values ​​should be understood to include values ​​close to these ranges or values. For numerical ranges, the endpoints of each range, the endpoints of each range and individual point values, and the individual point values ​​can be combined with each other to form one or more new numerical ranges, and these numerical ranges should be considered to be specifically disclosed in the present invention.

[0027] Where specific techniques or conditions are not specified in the examples of the present invention, the techniques or conditions described in the literature in the field or in accordance with the product specifications were used. For devices, instruments, reagents, etc. used, where the manufacturer is not specified, all are conventional products that can be purchased through regular channels. The raw materials and reagents in the examples of the present invention were purchased from commercial sources.

[0028] Some embodiments of the present invention provide a method for growing a gallium oxide semiconductor material based on a structured substrate, comprising:

[0029] 1) GaN nucleation layer growth: A GaN buffer layer is grown on the surface of a sapphire substrate or a silicon substrate, and then recrystallized at high temperature to obtain an isolated island-shaped GaN nucleation layer.

[0030] 2) Preparation of composite buffer layer: The GaN nucleation layer is subjected to high-temperature annealing treatment in the presence of oxygen, and the surface of the discrete island structure is oxidized to obtain a structured composite buffer layer structure.

[0031] 3) Gallium oxide nucleation layer growth: growing a gallium oxide nucleation layer on the surface of the structured composite buffer layer structure.

[0032] 4) Gallium oxide epitaxial layer growth: growing a gallium oxide epitaxial layer on the surface of the gallium oxide nucleation layer.

[0033] The embodiment of the present invention constructs an optimized gallium oxide semiconductor material growth process. This gallium oxide semiconductor material growth method based on a structured substrate forms a nucleation layer by growing a GaN buffer layer and performing an annealing treatment, providing a basic structure for subsequent growth and effectively dispersing stress. The structured composite buffer layer obtained by high-temperature annealing can reduce lattice mismatch and thermal expansion coefficient differences, and reduce dislocation defects. Subsequently, the gallium oxide nucleation layer and epitaxial layer are grown to further ensure the integrity of the material and the quality of the crystal structure. By introducing an in-situ structured composite buffer layer, the present invention avoids the lattice mismatch and stress problems in gallium oxide heteroepitaxial growth and improves the quality of the epitaxial layer. Specifically, the optimization method involves growing a GaN nucleation layer: growing a GaN buffer layer on a sapphire or silicon substrate, followed by high-temperature recrystallization to form an isolated island GaN nucleation layer; growing a composite buffer layer: annealing the GaN nucleation layer at high temperature in the presence of oxygen to oxidize the surface of the discrete island structures, resulting in a structured composite buffer layer; and growing a gallium oxide nucleation layer and epitaxial thin film on the surface of the structured composite buffer layer. This optimization method significantly reduces lattice mismatch and thermal expansion coefficient differences, while also reducing dislocation defects and significantly improving the quality of the gallium oxide epitaxial layer.

[0034] As a preferred embodiment, in step 1), the GaN crystal nucleus structure particles in the GaN nucleation layer have a horizontal size of 0.1-5 μm and a vertical size of 0.1-1 μm.

[0035] In the embodiment of the present invention, the above-mentioned structural parameters can be regulated by using conventional processes in the art and their parameter control (such as temperature, gas flow and pressure).

[0036] In a further preferred embodiment, the GaN crystal nucleus structure particles in the GaN nucleation layer are 0.5-4 μm in the horizontal direction and 0.2-0.8 μm in the vertical direction.

[0037] As a preferred embodiment, in step 1), the thickness of the GaN buffer layer is 10-500 nm, for example, 10, 20, 50, 80, 100, 120, 150, 200, 280, 300, 320, 350, 400, 450, 500 nm, etc.

[0038] In a further preferred embodiment, in step 1), the thickness of the GaN buffer layer is 100-500 nm.

[0039] As a preferred embodiment, in step 2), the surface of the structured composite buffer layer structure is an oxidized GaN layer.

[0040] In a further preferred embodiment, the thickness of the oxidized GaN layer is 1-100 nm.

[0041] In an embodiment of the present invention, the structure of the structured composite buffer layer includes an unoxidized GaN layer and an oxidized GaN layer covering the unoxidized GaN layer. The present invention adopts in-situ high-temperature oxidation in an air or oxygen atmosphere, where N atoms on the surface of the GaN nucleation layer are replaced by O atoms at high temperature to form gallium oxide. By controlling the conditions of high-temperature oxygen annealing, only the surface GaN is oxidized while the bottom GaN is retained. The depth of the oxidized GaN layer is between 1 and 100 nm, and the rest is an unoxidized GaN layer, forming a Ga2O3 / GaN structured composite buffer layer.

[0042] In a further preferred embodiment, the thickness of the oxidized GaN layer is 50-100 nm.

[0043] As a preferred embodiment, the thickness ratio of the oxidized GaN layer to the structured composite buffer layer structure is 1:(2-10).

[0044] In the embodiments of the present invention, by setting an optimal thickness, the synergistic effect of the various layers of the gallium oxide semiconductor material can be better exerted, the defects caused by the thermal expansion and lattice mismatch of the heteroepitaxial structure can be more effectively controlled, and the nucleation process of the gallium oxide epitaxial layer can be optimized, dislocation defects can be reduced, and the material quality and device performance of the epitaxial structure can be improved.

[0045] As a preferred embodiment, the growth methods in steps 1), 3), and 4) include metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD), or hydride vapor phase epitaxy (HVPE). In the embodiments of the present invention, each layer can be grown using conventional methods in the art.

[0046] As a preferred embodiment, in step 1), the high-temperature in-situ annealing parameters include temperature and oxygen or air flow rate. In the embodiment of the present invention, randomly distributed GaN crystal nuclei are formed by a recrystallization mechanism, for example, by controlling the temperature, gas flow rate, and pressure to adjust the recrystallized particle size.

[0047] As a preferred embodiment, in step 1), the growth method of the GaN buffer layer includes metal organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE) or physical vapor deposition (PVD); the growth method of the GaN buffer layer adopts MOCVD,

[0048] In a further preferred embodiment, in step 1), the GaN buffer layer is grown using MOCVD. Process parameters, including temperature, pressure, ammonia flow rate, trimethylgallium flow rate, and growth time, may be conventional parameters in the art. Preferably, the growth temperature is 500-650°C, the growth pressure is 30,000-70,000 Pa, and the gallium source material flow rate is 60-120 sccm.

[0049] In a further preferred embodiment, in step 1), the temperature of the high-temperature recrystallization is 1050-1100°C.

[0050] In a further preferred embodiment, in step 2), the processing temperature of the composite buffer layer is 900-1100° C., the chamber pressure is 30000-70000 Pa, and the oxygen flow rate is 1000-50000 sccm.

[0051] In a further preferred embodiment, in step 3), the gallium oxide nucleation layer is grown using metal organic chemical vapor deposition at a growth temperature of 600-900°C, a growth pressure of 80-120 Torr, and a source material flow rate of 90-120 sccm. This embodiment of the present invention optimizes the quality of the nucleation layer by regulating process parameters, enabling better interaction with the other layers and facilitating the growth of high-quality gallium oxide epitaxial layers.

[0052] In a further preferred embodiment, in step 4), the gallium oxide epitaxial layer is grown by hydride vapor phase epitaxy at a growth temperature of 650-850° C., a growth pressure of 500-700 Torr, and a Ga / O precursor ratio of 0.1-0.2.

[0053] In embodiments of the present invention, the introduction of an in-situ structured composite buffer layer effectively avoids the lattice mismatch and large thermal expansion coefficient difference encountered in gallium oxide heteroepitaxial growth, circumvents the anisotropic stress caused by periodic patterning, and effectively reduces the lattice mismatch and thermal expansion coefficient difference between the gallium oxide epitaxial layer and the substrate, reduces dislocation defects, and improves the quality of the epitaxial layer. By further optimizing the growth process and parameters, the quality of each layer is improved, and a synergistic effect is achieved, effectively reducing the lattice mismatch and thermal expansion coefficient difference between the gallium oxide epitaxial layer and the substrate, reducing dislocation defects, and improving the quality of the epitaxial layer. The optimized nucleation layer growth process can be further controlled.

[0054] As a preferred embodiment, in step 3), the gallium oxide nucleation layer is grown using metal organic chemical vapor deposition at a growth temperature of 600-900°C, a growth pressure of 80-120 Torr, and a source material flow rate of 90-120 sccm. In this embodiment of the present invention, the quality of the nucleation layer is optimized by controlling process parameters, such as a growth temperature of 800±50°C, a growth pressure of 100±15 Torr, and a source material flow rate of 100±10 sccm.

[0055] As a preferred embodiment, step 1) further includes cleaning and surface treating the sapphire substrate or silicon substrate. The substrate cleaning and surface treatment methods of the present invention can be performed using methods commonly used in the art. In the embodiments of the present invention, standard semiconductor substrate cleaning processes, such as 511 solution cleaning, can be used.

[0056] In embodiments of the present invention, the introduction of an in-situ composite structured buffer layer structure can effectively avoid the lattice mismatch and large thermal expansion coefficient difference faced by gallium oxide heteroepitaxial growth, and circumvent the anisotropic stress caused by periodic patterning, thereby better reducing the lattice mismatch and thermal expansion coefficient difference between the gallium oxide epitaxial layer and the substrate, reducing dislocation defects, and improving the quality of the epitaxial layer. The present invention optimizes the growth process and parameters to more effectively reduce the lattice mismatch and thermal expansion coefficient difference between the gallium oxide epitaxial layer and the substrate, reducing dislocation defects, and improving the quality of the epitaxial layer. The optimized nucleation layer growth process can further regulate the nucleation and growth process of the gallium oxide epitaxial layer, thereby obtaining high-quality gallium oxide semiconductor materials.

[0057] An embodiment of the present invention provides a gallium oxide semiconductor material obtained by the above-mentioned method for growing a gallium oxide semiconductor material based on a structured substrate.

[0058] In some embodiments of the present invention, by introducing an in-situ composite structured buffer layer structure on the substrate, the problems of complex process and high cost caused by the high-precision lithography and etching required for conventional patterned substrates are greatly simplified. The local statistical fluctuations of the in-situ structured composite substrate avoid the anisotropic stress caused by periodic patterning to a certain extent, and can effectively reduce the lattice mismatch and thermal expansion coefficient difference between the gallium oxide epitaxial layer and the substrate, thereby reducing the generation of dislocation defects and improving the quality of the epitaxial layer. By optimizing the nucleation layer growth process, the nucleation and growth process of the gallium oxide epitaxial layer can be further regulated to obtain high-quality gallium oxide semiconductor materials.

[0059] The present invention also provides the following specific examples.

[0060] Example 1

[0061] 1. Substrate preparation: Select a sapphire substrate and perform cleaning and surface treatment.

[0062] 2. GaN Nucleation Layer Growth: A 100nm thick GaN buffer layer is grown on a sapphire substrate using MOCVD. The growth temperature is 500-650°C, the growth pressure is 30,000-70,000 Pa, and the gallium source material flow rate is 60-120 sccm. This is followed by high-temperature in-situ annealing (high-temperature recrystallization) at 1050-1100°C to produce an isolated island-shaped GaN nucleation layer. Recrystallization forms randomly distributed GaN nuclei. The recrystallized particle size is regulated: 0.5-4μm horizontally and 0.2-0.8μm vertically.

[0063] 3. Preparation of composite (structured) buffer layer: The recrystallized GaN nucleation layer is subjected to in-situ high-temperature oxidation. In an oxygen atmosphere, the N atoms on the surface of the GaN nucleation layer are replaced by O atoms at high temperature to form gallium oxide. The surface of the discrete island structure is oxidized at a temperature of 900-1100°C, a chamber pressure of 30,000-70,000 Pa, and an oxygen flow rate of 1,000-50,000 sccm. By controlling the conditions of oxygen high-temperature annealing, only the surface GaN is oxidized while the bottom GaN is retained. The depth of the oxidized GaN layer is between 50-100 nm, forming a Ga2O3 / GaN composite structured buffer layer (structured composite buffer layer structure).

[0064] 4. Gallium oxide nucleation layer growth: A gallium oxide nucleation layer was grown on the surface of the Ga2O3 / GaN composite structured buffer layer using the MOCVD method at a growth temperature of 800±10°C, a growth pressure of 100±10 Torr, and a source material flow rate of 100±10 sccm.

[0065] 5. Gallium oxide epitaxial layer growth: The gallium oxide epitaxial layer continues to grow on the gallium oxide nucleation layer. The gallium oxide epitaxial layer is grown using the HVPE method at a growth temperature of 800-850°C, a growth pressure of 500-600 Torr, and a Ga / O precursor ratio of 0.1-0.15 to obtain high-quality gallium oxide semiconductor materials.

[0066] Comparative Example 1

[0067] The same method as in Example 1 is used, except that a sapphire substrate is selected and cleaned and surface treated.

[0068] A 100 nm thick GaN buffer layer was grown on a sapphire substrate using the MOCVD method.

[0069] Photolithography and etching are performed on the surface of the gallium nitride buffer layer to form a periodic stripe pattern structure with a stripe width of 5 μm, a height of 2 μm, and a stripe spacing of 1 μm.

[0070] A gallium oxide nucleation layer was grown on the surface of the patterned structure using an MOCVD method at a growth temperature of 800°C, a growth pressure of 100 Torr, and a source material flow rate of 100 sccm.

[0071] A gallium oxide epitaxial layer continues to grow on the nucleation layer to obtain a gallium oxide semiconductor material.

[0072] Comparative Example 2

[0073] The method is the same as that of Example 1, except that a silicon substrate is selected and cleaned and surface treated.

[0074] A 200nm thick silicon nitride buffer layer was grown on a silicon substrate using MBE. Photolithography and etching were then performed on the surface of the silicon nitride buffer layer to form a periodic circular pattern with a diameter of 3μm, a height of 1μm, and a spacing of 0.5μm.

[0075] The gallium oxide nucleation layer was grown on the surface of the patterned structure using the PLD method at a growth temperature of 700°C and a growth pressure of 10 -6 Torr, the laser energy is 200mJ.

[0076] A gallium oxide epitaxial layer continues to grow on the nucleation layer to obtain a gallium oxide semiconductor material.

[0077] The embodiments of the present invention can effectively solve the above problems, significantly reduce lattice mismatch and thermal expansion coefficient difference, while reducing dislocation defects and improving the quality of the epitaxial layer. The quality of the epitaxial layer of comparative example 1-2 is significantly worse than that of the embodiments of the present invention.

[0078] Unless otherwise specified, all numbers appearing in the specification and claims of this application, such as temperature and time values, should not be understood as absolutely precise values. Due to the standard deviation of measurement technology, the measured values ​​inevitably have certain experimental errors.

[0079] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the various embodiments of the present invention.

Claims

1. A method for growing gallium oxide semiconductor material based on a structured substrate, characterized in that: include: 1) GaN nucleation layer growth: A GaN buffer layer is grown on the surface of a sapphire substrate or a silicon substrate, and then recrystallized at high temperature to obtain an isolated island-shaped GaN nucleation layer; in step 1), the GaN crystal nucleus structure particles in the GaN nucleation layer are 0.1-5 μm in the horizontal direction and 0.1-1 μm in the vertical direction; 2) Preparation of a composite buffer layer: The GaN nucleation layer is subjected to a high-temperature annealing treatment in the presence of oxygen, and the surface of the discrete island structures is oxidized to obtain a structured composite buffer layer structure; in step 2), the surface of the structured composite buffer layer is an oxidized GaN layer; the thickness of the oxidized GaN layer is 1-100 nm; 3) Gallium oxide nucleation layer growth: growing a gallium oxide nucleation layer on the surface of the structured composite buffer layer structure; 4) Gallium oxide epitaxial layer growth: growing a gallium oxide epitaxial layer on the surface of the gallium oxide nucleation layer.

2. The method for growing gallium oxide semiconductor material based on a structured substrate according to claim 1, characterized in that: In step 1), the thickness of the GaN buffer layer is 10-500 nm.

3. The method for growing gallium oxide semiconductor materials based on a structured substrate according to claim 1, wherein: The growth methods in steps 1), 3) and 4) include metal organic chemical vapor deposition, molecular beam epitaxy, pulsed laser deposition or hydride vapor phase epitaxy.

4. The method for growing gallium oxide semiconductor material based on a structured substrate according to claim 3, characterized in that: In step 1), the growth method of the GaN buffer layer includes metal organic chemical vapor deposition, hydride vapor phase epitaxy or physical vapor deposition; the growth temperature is 500-650° C., the growth pressure is 30,000-70,000 Pa, and the gallium source material flow rate is 60-120 sccm.

5. The method for growing gallium oxide semiconductor material based on a structured substrate according to claim 4, characterized in that: In step 1), the high-temperature recrystallization temperature is 1050-1100°C.

6. The method for growing gallium oxide semiconductor material based on a structured substrate according to any one of claims 1 to 5, characterized in that: In step 2), the processing temperature of the composite buffer layer is 900-1100° C., the chamber pressure is 30000-70000 Pa, and the oxygen flow rate is 1000-50000 sccm.

7. The method for growing gallium oxide semiconductor material based on a structured substrate according to any one of claims 1 to 5, characterized in that: In step 3), a metal organic chemical vapor deposition method is used to grow a gallium oxide nucleation layer at a growth temperature of 600-900° C., a growth pressure of 80-120 Torr, and a source material flow rate of 90-120 sccm.

8. The method for growing gallium oxide semiconductor material based on a structured substrate according to any one of claims 1 to 5, characterized in that: In step 4), the gallium oxide epitaxial layer is grown by hydride vapor phase epitaxy at a growth temperature of 650-850° C., a growth pressure of 500-700 Torr, and a Ga / O precursor ratio of 0.1-0.

2.

9. The gallium oxide semiconductor material obtained by the gallium oxide semiconductor material growth method based on a structured substrate according to any one of claims 1 to 8.