Showerhead unit and substrate processing apparatus including same

Abstract

The invention provides a showerhead unit and a substrate processing apparatus including the showerhead unit. The showerhead unit controls plasma confinement by using an upper ground ring. The substrate processing apparatus includes: a chamber housing providing a space in which a substrate is processed; the substrate supporting unit is arranged in the chamber shell and is used for supporting the substrate; a showerhead unit provided inside the chamber housing and providing a process gas; and a plasma generation unit that generates plasma for processing the substrate by using the processing gas, wherein the showerhead unit includes: a showerhead body including a plurality of gas supply holes to supply the process gas; and an upper ring assembly surrounding the showerhead body, and including a portion extending in a direction in which the substrate support unit is positioned.

Description

[0001] Cross - reference to related applications

[0002] This application claims the priority of Korean Patent Application No. 10 -

[0003] 2023 - 0184248, filed with the Korean Intellectual Property Office on December 18, 2023, the content of which is incorporated herein by reference in its entirety. Technical field

[0004] The present disclosure relates to a showerhead unit and a substrate processing apparatus including the showerhead unit, which is applied to a facility for processing a substrate using plasma. Background art

[0005] In the case of a substrate processing apparatus that processes a substrate using plasma, a plasma region can be formed between a showerhead that supplies a processing gas and an electrostatic chuck that supports the substrate.

[0006] Recently, in order to improve the high - aspect - ratio contact (HARC) process, plasma confinement has been attempted by changing the hardware structure of the substrate processing apparatus. However, since both the showerhead and the electrostatic chuck have a flat structure for the plasma region, it is difficult to perform plasma confinement. Summary of the invention

[0007] An object of the present disclosure is to provide a showerhead unit and a substrate processing apparatus including the showerhead unit, which controls plasma confinement by using an upper ground ring.

[0008] The objects of the present disclosure are not limited to those mentioned above, and additional objects of the present disclosure not mentioned herein will be clearly understood by those skilled in the art from the following description of the present disclosure.

[0009] According to one aspect of the present disclosure, a substrate processing apparatus designed to achieve the above object includes: a chamber housing that provides a space for processing a substrate therein; a substrate support unit disposed inside the chamber housing to support the substrate; a showerhead unit disposed inside the chamber housing to supply a processing gas; and a plasma generation unit that generates plasma for processing the substrate by using the processing gas; wherein the showerhead unit includes: a showerhead body including a plurality of gas supply holes to supply the processing gas; and an upper ring assembly that surrounds the showerhead body, and the upper ring assembly includes a portion that extends in the direction in which the substrate support unit is positioned.

[0010] According to one aspect of the present disclosure, a showerhead unit designed to achieve the above object is installed in a device for processing a substrate using plasma, and includes: an inner showerhead including a plurality of gas supply holes for providing a process gas for generating plasma; an outer showerhead surrounding the inner showerhead; and an upper ring assembly surrounding the outer showerhead, wherein the upper ring assembly includes a portion extending in a direction in which a substrate support unit for supporting the substrate is positioned.

[0011] According to another aspect of the present disclosure, a substrate processing apparatus designed to achieve the above object includes: a chamber housing providing a space for processing a substrate therein; a substrate support unit provided inside the chamber housing for supporting the substrate; a showerhead unit provided inside the chamber housing for providing a process gas; and a plasma generation unit for generating plasma for processing the substrate by using the process gas; wherein the showerhead unit includes: an inner showerhead including a plurality of gas supply holes for providing the process gas; an outer showerhead surrounding the inner showerhead; and an upper ring assembly surrounding the outer showerhead, the upper ring assembly including: a first portion; a second portion provided on one side below the first portion; and a third portion provided on the other side below the first portion, grounded and provided closer to the outer showerhead than the second portion, and the third portion includes: a spacer providing a constant interval between the outer showerhead and the second portion; and a body lining coupled to the spacer and extending in a direction in which the substrate support unit is positioned.

[0012] Details of other embodiments are included in the detailed description and the drawings. Description of the Drawings

[0013] The above and other aspects and features of the present disclosure will become more apparent by referring to the accompanying drawings in which exemplary embodiments of the present disclosure are described in detail:

[0014] Figure 1 is an exemplary plan view showing an internal structure of a semiconductor manufacturing facility according to a first embodiment;

[0015] Figure 2 is an exemplary plan view showing an internal structure of a semiconductor manufacturing facility according to a second embodiment;

[0016] Figure 3 is an exemplary plan view showing an internal structure of a semiconductor manufacturing facility according to a third embodiment;

[0017] Figure 4 is an exemplary cross-sectional view showing an internal structure of a substrate processing apparatus according to a first embodiment;

[0018] Figure 5 is an exemplary cross-sectional view showing the internal structure of a substrate processing apparatus according to a second embodiment;

[0019] Figure 6 is an exemplary cross-sectional view showing the internal structure of a substrate processing apparatus according to a third embodiment;

[0020] Figure 7 is an exemplary view showing the internal structure of a showerhead unit according to a first embodiment of the present disclosure;

[0021] Figure 8 is an exemplary view showing the internal structure of an upper ring assembly according to a first embodiment of the present disclosure;

[0022] Figure 9 is an exemplary view showing the structural characteristics of a bulk liner according to a first embodiment of the present disclosure;

[0023] Figure 10 is an exemplary view showing the structural characteristics of a bulk liner according to a second embodiment of the present disclosure;

[0024] Figure 11 is an exemplary view showing the structural characteristics of a bulk liner according to a third embodiment of the present disclosure;

[0025] Figure 12 is an exemplary view showing the structural characteristics of a bulk liner according to a fourth embodiment of the present disclosure;

[0026] Figure 13 is an exemplary view showing the structural characteristics of a bulk liner according to a fifth embodiment of the present disclosure;

[0027] Figure 14 is an exemplary view showing the structural characteristics of a bulk liner according to a sixth embodiment of the present disclosure;

[0028] Figure 15 is an exemplary view showing the structural characteristics of a bulk liner according to a seventh embodiment of the present disclosure;

[0029] Figure 16 is a first exemplary view showing the structural characteristics of a bulk liner according to an eighth embodiment of the present disclosure;

[0030] Figure 17 is a second exemplary view showing the structural characteristics of a bulk liner according to an eighth embodiment of the present disclosure;

[0031] Figure 18 is a third exemplary view showing the structural characteristics of a bulk liner according to an eighth embodiment of the present disclosure;

[0032] Figure 19 is an exemplary view showing the internal structure of the upper ring assembly according to the second embodiment of the present disclosure; and

[0033] Figure 20 is an exemplary view showing the internal structure of the showerhead unit according to the second embodiment of the present disclosure. Detailed Description of the Invention

[0034] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. The same reference numerals will be used for the same elements in the drawings, and redundant descriptions thereof will be omitted.

[0035] The present disclosure relates to a substrate processing apparatus and a semiconductor manufacturing facility including a plurality of substrate processing apparatuses, the substrate processing apparatus being configured to process a substrate by using plasma. The substrate processing apparatus may include a showerhead unit that provides a processing gas to generate plasma. The showerhead unit may control plasma confinement by using an upper ground ring (UGR).

[0036] Hereinafter, the substrate processing apparatus and the semiconductor manufacturing facility will be described first, and then the showerhead unit including the upper ground ring will be described.

[0037] Figure 1 is an exemplary plan view showing the internal structure of a semiconductor manufacturing facility according to the first embodiment. Figure 2 is an exemplary plan view showing the internal structure of a semiconductor manufacturing facility according to the second embodiment. Figure 3 is an exemplary plan view showing the internal structure of a semiconductor manufacturing facility according to the third embodiment.

[0038] The first direction D1 and the second direction D2 form a plane in the horizontal direction. For example, the first direction D1 may be the front - to - back direction, and the second direction D2 may be the left - to - right direction. Alternatively, the first direction D1 may be the left - to - right direction, and the second direction D2 may be the front - to - back direction. The third direction D3 is the height direction and is perpendicular to the plane formed by the first direction D1 and the second direction D2. The third direction D3 may be the vertical direction.

[0039] According to Figures 1 to 3 , the semiconductor manufacturing facility 100 may include a load port module 110, a transfer module 120, a load lock chamber 130, a transfer module 140, and a processing chamber 150.

[0040] The semiconductor manufacturing facility 100 is a system that processes substrates by using etching processes, cleaning processes, deposition processes, etc. The semiconductor manufacturing facility 100 may include one processing chamber, but may also include multiple processing chambers without being limited thereto. The multiple processing chambers may include the same type of processing chambers, but may include different types of processing chambers without being limited thereto. When the semiconductor manufacturing facility 100 includes multiple processing chambers, it may be configured as a multi-chamber substrate processing system.

[0041] The load port module 110 is provided to allow a container SC on which a plurality of substrates are mounted to be placed on the load port module 110. For example, the container SC may be a front-opening unified pod (FOUP).

[0042] In the load port module 110, the container SC can be loaded or unloaded. In addition, in the load port module 110, the substrates accommodated in the container SC can be loaded or unloaded.

[0043] When the loading or unloading target is the container SC, the container transfer device can load the container SC onto the load port module 110 or unload the container SC from the load port module 110. Specifically, the container SC held by the container transfer device can be placed on the load port module 110, thereby loading the container SC onto the load port module 110. In addition, the container transfer device can unload the container SC from the load port module 110 by gripping the container SC placed on the load port module 110. Although not shown in Figures 1 to 3 , the container transfer device may be an overhead hoist transporter (OHT).

[0044] When the loading or unloading target is a substrate, the first transfer robot 122 can load the substrate into the container SC placed on the load port module 110 or unload the substrate from the container SC placed on the load port module 110. In the case of unloading the substrate, when the container SC is placed on the load port module 110, the first transfer robot 122 can approach the load port module 110, and then can take out the substrate from the container SC. In the case of loading the substrate, when the substrate is completely processed in the processing chamber 150, the first transfer robot 122 can take out the substrate from the load lock chamber 130, and then transport the substrate into the container SC.

[0045] A plurality of load port modules 110 may be provided in front of the turret module 120. For example, three load port modules 110a, 110b, and 110c (such as a first load port module 110a, a second load port module 110b, and a third load port module 110c) may be provided in front of the turret module 120.

[0046] When multiple loading port modules 110 are arranged in front of the indexing module 120, the containers SC placed on each loading port module can load different types of objects. That is, when the first loading port module 110a, the second loading port module 110b, and the third loading port module 110c are arranged in front of the indexing module 120, the first container SC1 placed on the first loading port module 110a can load wafer-type sensors, the second container SC2 placed on the second loading port module 110b can load substrates (i.e., wafers), and the third container SC3 placed on the third loading port module 110c can load consumable components (such as focus rings and edge rings).

[0047] However, the present embodiment is not limited to the above examples. The containers SC placed on each loading port module can load the same type of objects. Optionally, among the multiple loading port modules, the containers placed on some loading port modules can load the same type of objects, and the containers placed on some other loading port modules can load different types of objects.

[0048] The indexing module 120 is arranged between the loading port module 110 and the load lock chamber 130, and can be configured as an interface so that substrates can be transferred between the container SC on the loading port module 110 and the load lock chamber 130.

[0049] The indexing module 120 can include a first module housing 121 and a first transfer robot 122. The first transfer robot 122 is arranged inside the first module housing 121, and can transfer substrates between the loading port module 110 and the load lock chamber 130. The internal environment of the first module housing 121 is set to an atmospheric pressure environment, and the first transfer robot 122 can operate in the atmospheric pressure environment. One first transfer robot 122 can be arranged in the first module housing 121, but the present disclosure is not limited thereto, and multiple first transfer robots 122 can also be arranged.

[0050] Although not shown in Figures 1 to 3 the indexing module 120 can include a buffer chamber. The buffer chamber can temporarily store unprocessed substrates before the unprocessed substrates are transferred to the load lock chamber 130. In addition, the buffer chamber can temporarily store preprocessed substrates before the preprocessed substrates are transferred to the container SC on the loading port module 110. The buffer chamber can be arranged on other sidewalls except the sidewall adjacent to the loading port module 110 or the sidewall adjacent to the load lock chamber 130, but the present disclosure is not limited thereto, and it can also be arranged on the sidewall adjacent to the loading port module 110. Optionally, the buffer chamber can be arranged on the sidewall adjacent to the load lock chamber 130.

[0051] In the present embodiment, a Front End Module (FEM) may be provided on one side of the load lock chamber 130. The Front End Module (FEM) may include a load port module 110 and a transfer module 120, and may be configured as an Equipment Front End Module (EFEM), for example.

[0052] As described above, a plurality of load port modules 110 may be provided in the semiconductor manufacturing facility 100. Referring to Figures 1 to 3 the example of, a plurality of load port modules may have a structure in which the plurality of load port modules are arranged in the first direction D1, but the present disclosure is not limited thereto. The plurality of load port modules may also have a structure in which a plurality of load port modules are stacked in the vertical direction D3. When a plurality of load port modules are stacked in the vertical direction D3, the front end module may be configured as a vertically stacked EFEM.

[0053] The load lock chamber 130 may serve as a buffer chamber between the input port and the output port in the semiconductor manufacturing facility 100. That is, the load lock chamber 130 may be used to temporarily store unprocessed substrates or pre-processed substrates between the load port module 110 and the processing chamber 150. Although not shown in Figures 1 to 3 the load lock chamber 130 may include a buffer table for temporarily storing substrates therein.

[0054] A plurality of load lock chambers 130 may be provided between the transfer module 120 and the transfer module 140. For example, two load lock chambers 130a and 130b (such as a first load lock chamber 130a and a second load lock chamber 130b) may be provided between the transfer module 120 and the transfer module 140.

[0055] A plurality of load lock chambers may be provided in the same direction as the arrangement direction of the plurality of load port modules. Referring to Figures 1 to 3 the example of, the first load lock chamber 130a and the second load lock chamber 130b may be provided between the transfer module 120 and the transfer module 140 in the same direction as the arrangement direction of the three load port modules 110a, 110b, and 110c (i.e., in the first direction D1). The first load lock chamber 130a and the second load lock chamber 130b may be provided as a symmetric single-layer structure in which the first load lock chamber 130a and the second load lock chamber 130b are spaced apart from each other in the first direction D1.

[0056] However, the present embodiment is not limited to the above examples. A plurality of load lock chambers may be provided in a direction different from the arrangement direction of the plurality of load port modules. The first load lock chamber 130a and the second load lock chamber 130b may be provided between the transfer module 120 and the transfer module 140 in a direction different from the arrangement direction of the three load port modules 110a, 110b, and 110c (i.e., in the vertical direction D3). The first load lock chamber 130a and the second load lock chamber 130b may be provided in a double-layer structure in which the first load lock chamber 130a and the second load lock chamber 130b are arranged to be spaced apart from each other in the vertical direction.

[0057] Any one of the first load lock chamber 130a and the second load lock chamber 130b may temporarily store an unprocessed substrate transferred from the transfer module 120 to the transfer module 140. In addition, the other load lock chamber may temporarily store a preprocessed substrate transferred from the transfer module 140 to the transfer module 120. However, the present disclosure is not limited to the above examples. The first load lock chamber 130a and the second load lock chamber 130b may be commonly used for both temporary storage of unprocessed substrates and temporary storage of preprocessed substrates.

[0058] The load lock chamber 130 can change its internal environment to either a vacuum environment or an atmospheric pressure environment by using a gate valve or the like. Specifically, when the first transfer robot 122 of the transfer module 120 loads a substrate into the load lock chamber 130 or the first transfer robot 122 unloads a substrate from the load lock chamber 130, the load lock chamber 130 may form its internal environment in an environment that is the same as or similar to the internal environment of the transfer module 120. In addition, when the second transfer robot 142 of the transfer module 140 loads a substrate into the load lock chamber 130 or the second transfer robot 142 unloads a substrate from the load lock chamber 130, the load lock chamber 130 may form its internal environment in an environment that is the same as or similar to the internal environment of the transfer module 140. Therefore, the load lock chamber 130 can prevent the change of the internal gas pressure state of the transfer module 120 or the internal gas pressure state of the transfer module 140.

[0059] The transfer module 140 is provided between the load lock chamber 130 and the processing chamber 150 and may be provided as an interface such that a substrate can be transferred between the load lock chamber 130 and the processing chamber 150.

[0060] The transfer module 140 may include a second module housing 141 and a second transfer robot 142. The second transfer robot 142 is disposed inside the second module housing 141 and may transfer a substrate between the load lock chamber 130 and the processing chamber 150. The internal environment of the second module housing 141 is set to a vacuum environment, and the second transfer robot 142 may operate in the vacuum environment. One second transfer robot 142 may be disposed inside the second module housing 141, but it may also be provided in plural, and is not limited thereto.

[0061] The transfer module 140 may be connected to a plurality of processing chambers 150. To this end, the second module housing 141 may include a plurality of sides, and the second transfer robot 142 may freely rotate through each side of the second module housing 141 so that a substrate may be loaded into or unloaded from the plurality of processing chambers 150.

[0062] The processing chamber 150 is for processing a substrate. When an unprocessed substrate is provided, the processing chamber 150 may process the substrate and provide the preprocessed substrate to the load lock chamber 130 through the transfer module 140. A more detailed description of the processing chamber 150 will be given later.

[0063] When the semiconductor manufacturing facility 100 includes a plurality of processing chambers, the semiconductor manufacturing facility 100 may be formed in a structure having a cluster platform. For example, as Figure 1 shown, the plurality of processing chambers 150 may be arranged in a cluster manner based on the transfer module 140, but this embodiment is not limited thereto. When the semiconductor manufacturing facility 100 includes a plurality of processing chambers, the semiconductor manufacturing facility 100 may be formed in a structure having a quad platform. For example, as Figure 2 the example of shows, the plurality of processing chambers 150 may be arranged in a quad manner based on the transfer module 140. Optionally, when the semiconductor manufacturing facility 100 includes a plurality of processing chambers, the semiconductor manufacturing facility 100 may be formed in a structure having an in-line platform. For example, as Figure 3 the example of shows, the plurality of processing chambers may be arranged in an in-line manner based on the transfer module 140, and two different processing chambers may be arranged in series while forming a corresponding relationship on both sides of the transfer module 140.

[0064] Although in Figures 1 to 3Although not shown in the figure, the semiconductor manufacturing facility 100 may further include a control device. The control device is used to control the overall operation of each module constituting the semiconductor manufacturing facility 100. For example, the control device may control the substrate transfer of the first transfer robot 122 or the second transfer robot 142, control the change of the internal environment of the load lock chamber 130, and control the entire substrate processing process of the processing chamber 150.

[0065] The control device may include: a processor for controlling each component constituting the semiconductor manufacturing facility 100; a network for communicating with each component wired or wirelessly; one or more instructions related to controlling the function or operation of each component; a storage device for storing a process recipe including instructions, various data, etc. In addition, the control device may further include a user interface, which includes an input device and an output device. The input device is used to allow an operator to perform command input operations, etc. to manage the semiconductor manufacturing facility 100, and the output device is used to visualize and display the actuation state of the semiconductor manufacturing facility 100. The control device may be set as a computing device for data processing, analysis, and command transmission.

[0066] The instructions may be provided in the form of a computer program or application. The computer program may include one or more instructions and thus may be stored in a computer-readable recording medium. The instructions may include code generated by a compiler, code executable by an interpreter, etc. The storage device may be provided as one or more storage media selected from flash memory, HDD, SSD, card-type memory, RAM, SRAM, ROM, EEPROM, PROM, magnetic memory, magnetic disk, and optical disk.

[0067] Next, the processing chamber 150 will be described. The surface of the processing chamber 150 may be made of acid-resistant aluminum (alumite) formed with an anodized film, and the inside of the processing chamber 150 may be configured to be airtight. A plurality of processing chambers 150 may be provided in the semiconductor manufacturing facility 100, and the plurality of processing chambers may be arranged to be spaced apart from each other around the transfer module 140, but the present disclosure is not limited thereto, and a single processing chamber 150 may also be provided in the semiconductor manufacturing facility 100. The processing chamber 150 may be provided in a cylindrical shape, but is not limited thereto, and may be provided in a shape other than the cylindrical shape.

[0068] As described above, the processing chamber 150 can process a substrate. Hereinafter, the processing chamber 150 will be defined as a substrate processing device, and the internal structure of the processing chamber 150 will be described.

[0069] Figure 4 is an exemplary cross-sectional view showing the internal structure of the substrate processing device according to the first embodiment. According to Figure 4, the substrate processing apparatus 200 may include a chamber housing CH, a substrate support unit 210, a cleaning gas supply unit 220, a processing gas supply unit 230, a showerhead unit 240, a plasma generation unit 250, a liner unit 260, a baffle unit 270, a window module WM, and an antenna unit 280.

[0070] The substrate processing apparatus 200 may process the substrate W by using plasma. The substrate processing apparatus 200 may process the substrate W by dry process. For example, the substrate processing apparatus 200 may process the substrate W in a vacuum environment. The substrate processing apparatus 200 may process the substrate W by using an etching process, but is not limited thereto, and the substrate processing apparatus 200 may also process the substrate W by using a deposition process or a cleaning process.

[0071] The chamber housing CH provides a space in which a process of processing the substrate W by using plasma (i.e., a plasma process) is performed. The surface of the chamber housing CH may be made of acid-resistant aluminum (alumite) formed with an anodized film, and the inside of the chamber housing CH may be configured to be airtight. The chamber housing CH may be set in a cylindrical shape, but is not limited thereto, and may be set in a shape other than the cylindrical shape. The chamber housing CH may have an exhaust hole 201 at its lower portion.

[0072] The exhaust hole 201 may be connected to an exhaust line 203 on which a pump 202 is mounted. The exhaust hole 201 may discharge reaction by-products generated during the plasma process and gases remaining inside the chamber housing CH to the outside of the chamber housing CH through the exhaust line 203. In this case, the internal space of the chamber housing CH may be decompressed.

[0073] An opening 204 may be formed to penetrate through a sidewall of the chamber housing CH. The opening 204 may be provided as a passage through which the substrate W enters and exits the chamber housing CH. The opening 204 may be configured to automatically open and close, for example, through a door assembly 205.

[0074] The door assembly 205 may include an outer door 206 and a door driver 207. The outer door 206 may open and close the opening 204 on the outer wall of the chamber housing CH. The outer door 206 may move in the height direction D3 of the substrate processing apparatus 200 under the control of the door driver 207. The door driver 207 may operate by using at least one element selected from a motor, a hydraulic cylinder, and a pneumatic cylinder.

[0075] The substrate support unit 210 is installed in the inner lower region of the chamber housing CH. The substrate support unit 210 can adsorb and support the substrate W by using electrostatic force. For example, the substrate support unit 210 can be configured as an electrostatic chuck (ESC), but is not limited thereto. The substrate support unit 210 can support the substrate W by using various other methods such as vacuum and mechanical clamping.

[0076] When the substrate support unit 210 is configured as an electrostatic chuck (ESC), the substrate support unit 210 can include a base plate 211 and a dielectric layer 212. The dielectric layer 212 is disposed on the base plate 211 and can adsorb and support the substrate W placed on the dielectric layer 212. The base plate 211 can be formed of a material having excellent corrosion resistance and heat resistance. For example, the base plate 211 can be configured as an aluminum body. The dielectric layer 212 can be formed of, for example, a ceramic material.

[0077] Although not shown in Figure 4 the substrate support unit 210 may further include a bonding layer. The bonding layer can bond the base plate 211 to the dielectric layer 212. For example, the bonding layer can include a polymer.

[0078] A ring structure 213 is disposed to surround the outer edge region of the dielectric layer 212. When a plasma process is performed inside the chamber housing CH, the ring structure 213 can be used to concentrate ions on the substrate W. The ring structure 213 can be formed of a silicon material. For example, the ring structure 213 can be configured as a focusing ring.

[0079] Although not shown in Figure 4 the substrate processing apparatus 200 may further include an edge ring. The edge ring can be disposed below or outside the focusing ring. The edge ring can be used to prevent one side of the dielectric layer 212 from being damaged by plasma. The edge ring can be formed of an insulator material such as ceramic or quartz.

[0080] A heating member 214 and a cooling member 215 are provided to maintain the substrate W at a process temperature when a substrate processing process is performed inside the chamber housing CH. The heating member 214 can be installed inside the dielectric layer 212 and can be configured as a heating wire. The cooling member 215 can be installed inside the base plate 211 and can be configured as a cooling tube through which a refrigerant passes. A cooling device (cooler) 216 can supply the refrigerant to the cooling member 215. The cooling device 216 can use cooling water as the refrigerant, but is not limited thereto, and can also use helium (He) gas. Optionally, the cooling device 216 can use both cooling water and helium gas as the refrigerant. Meanwhile, the heating member 214 may not be provided inside the substrate support unit 210.

[0081] The cleaning gas supply unit 220 supplies a cleaning gas to the dielectric layer 212 or the ring structure 213 to remove residual particles in the dielectric layer 212 or the ring structure 213. For example, the cleaning gas supply unit 220 may supply nitrogen (N2) as the cleaning gas.

[0082] The cleaning gas supply unit 220 may include a cleaning gas supply source 221 and a cleaning gas supply pipe 222. The cleaning gas supply pipe 222 may be connected to the space between the dielectric layer 212 and the ring structure 213. The cleaning gas supplied by the cleaning gas supply source 221 may move through the cleaning gas supply pipe 222 to the space between the dielectric layer 212 and the ring structure 213 to remove residual particles in the edge portion of the dielectric layer 212 or the upper portion of the ring structure 213.

[0083] The process gas supply unit 230 supplies a process gas to the internal space of the chamber housing CH. The process gas supply unit 230 may supply the process gas to the internal space of the chamber housing CH through a hole formed through the upper cover (i.e., the window module WM) of the chamber housing CH, but is not limited thereto. The process gas supply unit 230 may also supply the process gas to the internal space of the chamber housing CH through a hole formed through the side wall of the chamber housing CH.

[0084] The process gas supply unit 230 may include a process gas supply source 231 and a process gas supply pipe 232. The process gas supply source 231 may supply a gas for processing the substrate W as the process gas. The process gas supply source 231 may be provided singly in the substrate processing apparatus 200, but may also be provided plurally in the substrate processing apparatus 200, without being limited thereto. When the process gas supply source 231 is provided plurally in the substrate processing apparatus 200, the plurality of process gas supply sources 231 may supply the same type of process gas, but are not limited thereto, and may supply different types of process gas.

[0085] The showerhead unit 240 sprays the process gas supplied from the process gas supply source 231 onto the entire area of the substrate W disposed in the internal space of the chamber housing CH. The showerhead unit 240 may be connected to the process gas supply source 231 through the process gas supply pipe 232.

[0086] The showerhead unit 240 is disposed in the internal space of the chamber housing CH and may include a plurality of gas supply holes 242. The plurality of gas supply holes 242 may be formed to penetrate the surface of the showerhead body 241 in the vertical direction D3. The plurality of gas supply holes 242 may be formed to be spaced apart from each other at a constant interval on the showerhead body 241. The showerhead unit 240 may spray the process gas uniformly onto the entire area of the substrate W through the plurality of gas supply holes 242.

[0087] The showerhead unit 240 may be installed inside the chamber housing CH to face the substrate support unit 210 in the vertical direction D3. The showerhead unit 240 may be configured to have a diameter larger than that of the dielectric layer 212, but is not limited thereto. The showerhead unit 240 may be configured to have the same diameter as that of the dielectric layer 212. The showerhead unit 240 may be formed of a silicon material, but is not limited thereto. The showerhead unit 240 may also be formed of a metal material.

[0088] Although not shown in Figure 4 the showerhead unit 240 may be divided into a plurality of units. For example, the showerhead unit 240 may be divided into three modules, such as a first head module, a second head module, and a third head module. The first head module may be disposed at a position corresponding to the central region of the substrate W. The second head module may be disposed to surround the outer edge of the first head module. The second head module may be disposed at a position corresponding to the intermediate region of the substrate W. The third head module may be disposed to surround the outer edge of the second head module. The third head module may be disposed at a position corresponding to the edge region of the substrate W.

[0089] The plasma generation unit 250 generates plasma from the gas remaining in the discharge space. In this case, the discharge space is the internal space of the chamber housing CH and may be the space formed between the showerhead unit 240 and the window module WM. Alternatively, the discharge space may be the space formed between the substrate support unit 210 and the showerhead unit 240. When the discharge space is the space formed between the substrate support unit 210 and the showerhead unit 240, the discharge space may be divided into a plasma region and a processing region. The plasma region may be formed higher than the processing region.

[0090] The plasma generation unit 250 may generate plasma in the discharge space by using an inductively coupled plasma (ICP) source. For example, by using the substrate support unit 210 and the antenna unit 280 as the first electrode (lower electrode) and the second electrode (upper electrode), respectively, the plasma generation unit 250 may generate plasma in the discharge space, but the present embodiment is not limited thereto.

[0091] The plasma generation unit 250 may generate plasma in the discharge space by using a capacitively coupled plasma (CCP) source. By using the substrate support unit 210 and the showerhead unit 240 as the first electrode (lower electrode) and the second electrode (upper electrode), respectively, the plasma generation unit 250 may generate plasma in the discharge space. The case where the plasma generation unit 250 is configured as an ICP source will be described herein. The case where the plasma generation unit 250 is configured as a CCP source will be described later.

[0092] The plasma generation unit 250 may include a first high-frequency power supply 251, a first transmission line 252, a second high-frequency power supply 253, and a second transmission line 254.

[0093] The first high-frequency power supply 251 applies RF power to the first electrode. The first high-frequency power supply 251 may be used as a plasma source for generating plasma in the chamber housing CH, but is not limited thereto. The first high-frequency power supply 251 may be used to control the characteristics of the plasma in the chamber housing CH together with the second high-frequency power supply 253.

[0094] The first high-frequency power supply 251 may be provided in plural in the substrate processing apparatus 200. In this case, the plasma generation unit 250 may include a first matching network electrically connected to each of the first high-frequency power supplies 251. When frequency power of different amplitudes is input from the plurality of first high-frequency power supplies 251, the first matching network may be used to match the frequency power of different amplitudes and apply them to the first electrode.

[0095] The first transmission line 252 may connect the first electrode to ground (GND). The first high-frequency power supply 251 may be mounted on the first transmission line 252, but is not limited thereto. The first transmission line 252 may connect the first electrode to the first high-frequency power supply 251. For example, the first transmission line 252 may be provided as an RF rod.

[0096] The second high-frequency power supply 253 applies RF power to the second electrode. The second high-frequency power supply 253 may be used to control the characteristics of the plasma in the chamber housing CH. For example, the second high-frequency power supply 253 may be used to control the ion bombardment energy in the chamber housing CH.

[0097] The second high-frequency power supply 253 may be provided in plural in the substrate processing apparatus 200. In this case, the plasma generation unit 250 may include a second matching network electrically connected to each of the second high-frequency power supplies 253. When frequency power of different amplitudes is input from the plurality of second high-frequency power supplies 253, the second matching network may be used to match the frequency power and apply them to the second electrode.

[0098] The second transmission line 254 connects the second electrode to GND. The second high-frequency power supply 253 may be mounted on the second transmission line 254.

[0099] The inner lining unit 260 may be defined as a wall lining and protect the interior of the chamber housing CH from arc discharge occurring during the process of exciting the processing gas or impurities generated during the substrate processing. The inner lining unit 260 may be formed to cover the inner wall of the chamber housing CH.

[0100] The inner lining unit 260 may include a main body 261 and a support ring 262 on the upper part of the main body 261. The support ring 262 may protrude outward from the upper part of the main body 261 in the first direction D1 and may be used to fix the main body 261 to the chamber housing CH.

[0101] The baffle unit 270 is used to discharge process by-products or unreacted gases of the plasma in the chamber housing CH to the outside. The baffle unit 270 may be installed in the space between the substrate support unit 210 and the inner wall of the chamber housing CH (or the inner lining unit 260), and may be installed adjacent to the exhaust hole 201. The baffle unit 270 may be provided in an annular shape between the substrate support unit 210 and the inner wall of the chamber housing CH.

[0102] The baffle unit 270 may include a plurality of slots that pass through the main body in the vertical direction D3 to control the flow of the processing gas in the chamber housing CH. The baffle unit 270 may be formed of a material having etching resistance to minimize damage or deformation caused by free radicals or the like in the internal space of the chamber housing CH where plasma is generated. For example, the baffle unit 270 may be formed to include quartz.

[0103] The window module WM serves as an upper cover of the chamber housing CH, which seals the internal space of the chamber housing CH. The window module WM may be provided separately from the chamber housing CH, but is not limited thereto, and may also be provided integrally with the chamber housing CH. The window module WM may be formed of a dielectric window made of an insulating material. For example, the window module WM may be formed of alumina. When a plasma process is performed in the internal space of the chamber housing CH, the window module WM may include a coating film on its surface to suppress particle generation.

[0104] The antenna unit 280 is used to excite the processing gas into plasma by generating a magnetic field and an electric field inside the chamber housing CH. The antenna unit 280 may operate using the RF power supplied from the second high-frequency power supply 253. The antenna unit 280 may be provided on the upper part of the chamber housing CH. For example, the antenna unit 280 may be provided on the window module WM, but is not limited thereto, and the antenna unit 280 may be provided on the side wall of the chamber housing CH.

[0105] The antenna unit 280 may include an antenna 282 inside or on the surface of the main body 281. The antenna 282 may be arranged to form a closed loop by using a coil. The antenna 282 may be formed in a spiral shape or various other shapes along the first direction D1 of the chamber housing CH.

[0106] The antenna unit 280 may be formed in a planar type, but is not limited thereto, and the antenna unit 280 may be formed in a cylindrical type. When the antenna unit 280 is formed in a planar type, it may be disposed on the upper portion of the chamber housing CH. When the antenna unit 280 is formed in a cylindrical type, it may be disposed to surround the outer sidewall of the chamber housing CH.

[0107] The case where the plasma generation unit 250 is provided as an ICP source has been described with reference to Figure 4 Below, the case where the plasma generation unit 250 is provided as a CCP source will be described with reference to Figure 5 and Figure 6 Below, compared with the case of Figure 4 the description of redundant parts will be omitted, and only the parts corresponding to their differences will be described.

[0108] Figure 5 is an exemplary cross-sectional view showing the internal structure of a substrate processing apparatus according to a second embodiment. Figure 6 is an exemplary cross-sectional view showing the internal structure of a substrate processing apparatus according to a third embodiment.

[0109] With reference to Figure 5 and Figure 6 , the substrate processing apparatus 200 may include a chamber housing CH, a substrate support unit 210, a cleaning gas supply unit 220, a processing gas supply unit 230, a showerhead unit 240, a plasma generation unit 250, a liner unit 260, a baffle unit 270, and a window module WM. That is, compared with the substrate processing apparatus 200 of Figure 4 the substrate processing apparatus 200 of Figure 5 and Figure 6 may not include the antenna unit 280.

[0110] The plasma generation unit 250 may include a first high-frequency power supply 251, a first transmission line 252, a second high-frequency power supply 253, and a second transmission line 254, but is not limited thereto. As Figure 6 shown, the plasma generation unit 250 may include a first high-frequency power supply 251, a first transmission line 252, and a second transmission line 254. That is, compared with the plasma generation unit 250 of Figure 5 the plasma generation unit 250 of Figure 6 may not include the second high-frequency power supply 253.

[0111] In the case of the example according to Figure 4 the second transmission line 254 may be connected to the antenna 282 of the antenna unit 280. The second high-frequency power supply 253 may apply RF power to the antenna 282 of the antenna unit 280. In the case of the example according to Figure 5In the case of the example, the second transmission line 254 may be connected to the showerhead body 241 of the showerhead unit 240. The second high-frequency power supply 253 may apply RF power to the showerhead body 241 of the showerhead unit 240.

[0112] In the case of the example according to Figure 5 the second high-frequency power supply 253 may be installed on the second transmission line 254. In the case of the example according to Figure 6 the second high-frequency power supply 253 may not be installed on the second transmission line 254. When the second high-frequency power supply 253 is installed on the second transmission line 254, the plasma generation unit 250 may apply multiple frequencies to the substrate processing apparatus 200.

[0113] Recently, there has been a need to improve the high aspect ratio contact (HARC) process in accordance with semiconductor integration and high-end processes. As a method of improving the high aspect ratio contact process, attempts have been made to change the hardware structure of the substrate processing apparatus 200 for plasma confinement. In the present disclosure, a showerhead unit 240 including an upper ground ring (UGR) and capable of controlling plasma confinement by using the upper ground ring will be described.

[0114] Figure 7 is an exemplary view showing the internal structure of a showerhead unit according to a first embodiment of the present disclosure. Referring to Figure 7 , the showerhead unit 240 may include an inner showerhead 310, an outer showerhead 320, and an upper ring assembly 330.

[0115] The inner showerhead 310 is a component constituting the showerhead body 241, and may include gas supply holes 242. The gas supply holes 242 may be formed by passing through the inner showerhead 310 in the third direction D3, and may be formed in plural in the inner showerhead 310. The inner showerhead 310 may supply a processing gas to the inner space of the chamber housing CH through the plurality of gas supply holes 242. The inner showerhead 310 may be provided as a gas distribution assembly including a gas distribution plate (GDP).

[0116] The outer showerhead 320 together with the inner showerhead 310 constitutes the showerhead body 241, and the outer showerhead 320 may be provided to surround the inner showerhead 310 to protect the inner showerhead 310. The inner showerhead 310 may be provided in a cylindrical shape, and the outer showerhead 320 may be provided in an annular shape, but the shapes of the inner showerhead 310 and the outer showerhead 320 are not limited thereto. The gas supply holes 242 may be formed only in the inner showerhead 310, but are not limited thereto, and may also be formed in both the inner showerhead 310 and the outer showerhead 320.

[0117] The outer nozzle 320 may be formed of the same material as that of the inner nozzle 310, but is not limited thereto, and the outer nozzle 320 may be formed of a material different from that of the inner nozzle 310. For example, the inner nozzle 310 may be formed of a silicon material or a metal material, and the outer nozzle 320 may be formed of a material having etching resistance.

[0118] The upper ring assembly 330 is used to protect the inner nozzle 310 and the outer nozzle 320, and may be arranged to surround the outer nozzle 320. The outer nozzle 320 may be used as a spacer for adjusting the gap between the inner nozzle 310 and the upper ring assembly 330. Similarly, the upper ring assembly 330 may be used as a spacer for adjusting the gap between the outer nozzle 320 and the inner liner unit 260.

[0119] Referring Figure 8 , the upper ring assembly 330 may include a first part 410, a second part 420, and a third part 430. Figure 8 is an exemplary view showing the internal structure of the upper ring assembly according to the first embodiment of the present disclosure.

[0120] The first part 410 may be arranged above the second part 420 and the third part 430. The first part 410 may be formed to include a metal material. For example, the first part 410 may be formed to include an aluminum (Al) material. The first part 410 may be arranged as a top plate. The first part 410 may be connected to the window module WM mounted thereon. Optionally, the first part 410 may be part of the window module WM.

[0121] The second part 420 and the third part 430 may be arranged below the first part 410. The second part 420 may be arranged on one side below the first part 410, and the third part 430 may be arranged on the other side below the first part 410. The second part 420 and the third part 430 may be arranged in parallel below the first part 410.

[0122] The second part 420 may extend downward based on the height direction D3 of the chamber housing CH. The second part 420 may be connected to the inner liner unit 260 installed in the chamber housing CH. Optionally, the second part 420 may be part of the inner liner unit 260. The second part 420 may be arranged as a heated inner liner by absorbing heat from the plasma generated in the internal space of the chamber housing CH. Optionally, the second part 420 may be arranged as a heated inner liner shield ring installed on the inner liner unit 260 by absorbing heat from the inner nozzle 310 and the outer nozzle 320 (i.e., the nozzle body 241), which are heated by the plasma. When connected to the inner liner unit 260, the second part 420 may be arranged as a heated inner liner shield ring installed on the inner liner unit 260.

[0123] The third part 430 can serve as a ground between the showerhead body 241 and the liner unit 260. The third part 430 can be stacked on the second part 420 or the liner unit 260, and can be used to perform grounding by forming an RF path in its lower structure (such as the liner unit 260). In addition, the third part 430 can be used to prevent particles from flowing between the showerhead body 241 and the liner unit 260. The third part 430 can be set as an upper ground ring (UGR). The third part 430 can include a spacer 431 and a body liner 432.

[0124] The spacer 431 can provide a constant spacing between the showerhead body 241 and the second part 420. The spacer 431 can be formed of a metallic material. For example, the spacer 431 can be formed of an aluminum (Al) material.

[0125] The spacer 431 can be electrochemically treated to form an oxide layer on its surface. The spacer 431 can be treated by using an anodizing method to form an oxide layer on its surface. The spacer 431 can be electrochemically surface-treated (H-anodizing) using an electrolyte containing a hydrogen component. The spacer 431 can be surface-treated to form an oxide layer on the remaining surface except for the grounding surface. The spacer 431 can maintain the original functions of the third part 430 (i.e., grounding and preventing the inflow of particles) through the surface treatment as described above.

[0126] The body liner 432 is coupled to the spacer 431 and can be formed to extend from the sidewall portion of the showerhead body 241 to the plasma space. That is, the body liner 432 can extend into the space between the substrate support unit 210 and the showerhead unit 240. The body liner 432 can limit the distribution area of the processing gas supplied to the inner space of the chamber housing CH through the plurality of gas supply holes 242, thereby obtaining an effect of controlling plasma confinement.

[0127] The body liner 432 can be formed to include a silicon (Si) material. The body liner 432 can include only the silicon material and can thus be set as a single Si body liner, but is not limited thereto, and can also include another material in addition to silicon and can thus also be set as a multi-Si body liner.

[0128] When the body liner 432 is set as a single Si body liner, the probability of particles adsorbed on the surface of the body liner 432 can be more reduced compared to the case where the body liner 432 is set as a multi-Si body liner. When the body liner 432 is set as a single Si body liner, the amount of particles flowing between the showerhead body 241 and the liner unit 260 can be minimized.

[0129] When the main body lining 432 is set as a single-Si main body lining, the main body lining 432 can be formed of a silicon material having a low resistivity. The main body lining 432 can be formed of a silicon material having a resistivity less than a reference value. The main body lining 432 can be formed of a low-resistance silicon material. For example, the main body lining 432 can be formed of a silicon material having a resistivity of 0.6 mΩ·cm to 1.0 mΩ·cm or less. When the main body lining 432 is formed of a low-resistance silicon material, an effect of reducing the possibility of arcing due to a potential difference during a substrate processing step can be obtained as compared with a case where the main body lining 432 is formed of a high-resistance silicon material. The high-resistance silicon material means a silicon material having a resistivity greater than the reference value. In addition, when the main body lining 432 is formed of a low-resistance silicon material, an effect of reducing the possibility of arcing due to a potential difference during a substrate processing step can be obtained as compared with a case where the main body lining 432 is formed of a medium-resistance silicon material. The medium-resistance silicon material means a silicon material having a resistivity equal to the reference value.

[0130] When the main body lining 432 is set as a multi-Si main body lining, the main body lining 432 can include a material other than the silicon material. The other material can be a material capable of reducing the resistance of the silicon material. The other material can be a material having a low resistivity, and can be a material having a resistivity less than the reference value. The other material can be a low-resistance material. For example, the other material can be a material having a resistivity of 0.6 mΩ·cm to 1.0 mΩ·cm or less. When the main body lining 432 is set as described above, the influence of the process gas and the ground of the RF path on the by-products can be reduced. When the main body lining 432 is set as a multi-silicon main body lining, the silicon material can also be set as a material having a low resistivity.

[0131] When the main body lining 432 is set as a multi-Si main body lining, the material other than the silicon material can be a carbon material. That is, the main body lining 432 can include a SiC material, and thus can be set as a multi-Si main body lining.

[0132] The main body lining 432 can extend in a height direction D3, which is a longitudinal direction, of the lining unit 260 set in an annular shape. Refer to Figure 9 , the main body lining 432 can be formed to extend a first length L1 from a side surface of the external shower head 320 to the plasma space PS. Alternatively, refer to Figure 10, a body lining 432 can be formed to extend a second length L2 from the side surface of the external nozzle 320 to the plasma space PS. The first length L1 and the second length L2 refer to the lengths protruding downward from the surface of the upper ring assembly 330 in the height direction D3. The second length L2 can be greater than the first length L1 (L2 > L1). The plasma space PS can include the above-mentioned plasma region and the processing region. Optionally, the plasma space PS can include only one of the plasma region and the processing region.

[0133] The body lining 432 can be formed to extend from the lower surface of the external nozzle 320 in the direction of the upper surface where the ring structure 213 is located. When the lower surface of the external nozzle 320 is defined as the first point P1 and the upper surface of the ring structure 213 is defined as the second point P2, the body lining 432 can be formed to extend from the first point P1 in the direction where the second point P2 is located. The body lining 432 can be formed to extend through the plasma space PS. The length of the body lining 432 can have the level equal to the level of the first point P1 as the minimum value, and the distance from the first point P1 to the second point P2 can be the maximum value. The minimum value can be 0, and the maximum value can be L3.

[0134] The first length L1 can be greater than 0 and less than 0.5 * L3 (0 < L1 < 0.5 * L3). When the first length L1 is less than the second length L2, the first length L1 can be equal to or greater than 0.5 * L3. When the body lining 432 is formed to have the first length L1, the body lining 432 can be formed to protrude more into the plasma space PS than the lower surface of the external nozzle 320.

[0135] The second length L2 can be equal to or greater than 0.5 * L3 and less than L3 (0.5 * L3 ≤ L2 < L3). When the second length L2 is greater than the first length L1, the second length L2 can be less than 0.5 * L3. When the body lining 432 is formed to have the second length L2, the body lining 432 can be formed to have a length that does not contact the ring structure 213.

[0136] When the body lining 432 is formed to have the second length L2, the body lining 432 can be positioned closer to the substrate support unit 210 than when the body lining 432 is formed to have the first length L1. On the other hand, when the body lining 432 is formed to have the second length L2, the body lining 432 can be positioned farther from the nozzle unit 240 than when the body lining 432 is formed to have the first length L1. Figure 9 is an exemplary view showing the structural characteristics of the body lining according to the first embodiment of the present disclosure. Figure 10 is an exemplary view showing the structural characteristics of the body lining according to the second embodiment of the present disclosure.

[0137] When the main body liner 432 is formed to have a first length L1, compared with the case where the main body liner 432 is formed to have a second length L2, the restriction on the distribution area of the processing gas can be more alleviated. When the main body liner 432 is formed to have a first length L1, compared with the case where the main body liner 432 is formed to have a second length L2, the plasma restriction can be more alleviated. When the main body liner 432 is formed to have a first length L1, compared with the case where the main body liner 432 is formed to have a second length L2, the etching rate of the entire surface of the substrate W can be more reduced.

[0138] When the main body liner 432 is formed to have a second length L2, compared with the case where the main body liner 432 is formed to have a first length L1, the restriction on the distribution area of the processing gas can be more enhanced. When the main body liner 432 is formed to have a second length L2, compared with the case where the main body liner 432 is formed to have a first length L1, the plasma restriction can be more enhanced. When the main body liner 432 is formed to have a second length L2, compared with the case where the main body liner 432 is formed to have a first length L1, the etching rate (ER) of the entire surface of the substrate W can be more increased.

[0139] As described above, the case where the main body liner 432 is formed to have a first length L1 and the case where the main body liner 432 is formed to have a second length L2 have been described by comparison. According to the degree to which the distribution area of the processing gas is restricted in the internal space of the chamber housing CH, the main body liner 432 can be modified to have various lengths within a range greater than 0 and less than L3. Alternatively, according to the degree to which the distribution area of the plasma is restricted in the internal space of the chamber housing CH, the main body liner 432 can be modified to have various lengths within a range greater than 0 and less than L3. Alternatively, according to which line matches the etching rate of the entire surface of the substrate W or the edge portion of the substrate W, the main body liner 432 can be modified to have various lengths within a range greater than 0 and less than L3.

[0140] The main body liner 432 can extend in the vertical direction D3 inside the chamber housing CH, but is not limited thereto. The main body liner 432 can be formed to be inclined with respect to the vertical direction D3. Referring to Figure 11 , the main body liner 432 can be formed to be inclined in the inward direction, rather than the vertical direction D3, inside the chamber housing CH. The main body liner 432 can be formed to be inclined at an angle of +θ. Alternatively, referring to Figure 12 , the main body liner 432 can be formed to be inclined in the outward direction, rather than the vertical direction D3, inside the chamber housing CH. The main body liner 432 can be formed to be inclined at an angle of -θ. Figure 11 is an exemplary view showing the structural characteristics of the main body liner according to the third embodiment of the present disclosure. Figure 12It is an exemplary view showing the structural characteristics of the main body lining according to the fourth embodiment of the present disclosure.

[0141] When the main body lining 432 is formed to be inclined in the inward direction, compared with the case where the main body lining 432 is formed to be inclined in the outward direction, the restriction on the distribution area of the processing gas can be more enhanced. When the main body lining 432 is formed to be inclined in the inward direction, compared with the case where the main body lining 432 is formed to be inclined in the outward direction, the plasma confinement can be more enhanced. When the main body lining 432 is formed to be inclined in the inward direction, compared with the case where the main body lining 432 is formed to be inclined in the outward direction, the etching rate of the entire surface of the substrate W can be more increased. When the main body lining 432 is formed to be inclined in the inward direction, compared with the case where the main body lining 432 is formed to be inclined in the outward direction, the etching rate of the edge portion of the substrate W can be more increased.

[0142] When the main body lining 432 is formed to be inclined in the outward direction, compared with the case where the main body lining 432 is formed to be inclined in the inward direction, the restriction on the distribution area of the processing gas can be more alleviated. When the main body lining 432 is formed to be inclined in the outward direction, compared with the case where the main body lining 432 is formed to be inclined in the inward direction, the plasma confinement can be more alleviated. When the main body lining 432 is formed to be inclined in the outward direction, compared with when the main body lining 432 is formed to be inclined in the inward direction, the etching rate of the entire surface of the substrate W can be more reduced. When the main body lining 432 is formed to be inclined in the outward direction, compared with the case where the main body lining 432 is formed to be inclined in the inward direction, the etching rate of the edge portion of the substrate W can be more reduced.

[0143] The main body lining 432 can be formed in a planar shape. However, in order to control the plasma region inside the chamber housing CH, various modifications can be made to the shape of the main body lining 432. Referring to Figure 13 , the main body lining 432 can have a surface that protrudes outward and is completely inclined. The inclined surface of the main body lining 432 can be disposed inside the chamber housing CH in the inward direction. Optionally, referring to Figure 14 , the main body lining 432 can have a surface that protrudes outward and is partially inclined. As described above, the partially inclined surface of the main body lining 432 can be disposed inside the chamber housing CH in the inward direction. Optionally, referring to Figure 15 , the main body lining 432 can have a surface that protrudes outward and is formed in a layered shape. The layered surface of the main body lining 432 can be disposed inside the chamber housing CH in the inward direction.

[0144] When the main body lining 432 is formed as shown in reference to Figures 13 to 15When the non-planar shape is described, compared with the case where the main body lining 432 is formed in a planar shape, the restriction on the distribution area of the processing gas can be more alleviated. When the main body lining 432 is formed in a non-planar shape, compared with the case where the main body lining 432 is formed in a planar shape, the plasma restriction can be more alleviated. When the main body lining 432 is formed in a non-planar shape, compared with the case where the main body lining 432 is formed in a planar shape, the etching rate of the entire surface of the substrate W can be more reduced. When the main body lining 432 is formed in a non-planar shape, compared with the case where the main body lining 432 is formed in a planar shape, the etching rate of the edge portion of the substrate W can be more reduced. Figure 13 is an exemplary view showing the structural characteristics of the main body lining according to the fifth embodiment of the present disclosure. Figure 14 is an exemplary view showing the structural characteristics of the main body lining according to the sixth embodiment of the present disclosure. Figure 15 is an exemplary view showing the structural characteristics of the main body lining according to the seventh embodiment of the present disclosure.

[0145] The length of the main body lining 432 can be fixed, but is not limited thereto, and the length of the main body lining 432 can be changed to control the plasma region according to the internal environment of the plasma. Figure 16 is a first exemplary view showing the structural characteristics of the main body lining according to the eighth embodiment of the present disclosure.

[0146] The main body lining 432 can be connected to the driving module 510 and the control module 520. The driving module 510 can provide power for extending the length of the main body lining 432. In addition, the driving module 510 can provide power for reducing the length of the main body lining 432. The control module 520 can control the driving module 510 to provide power to the main body lining 432.

[0147] Referring to Figure 17 , the power provided by the driving module 510 can be used to extend the length of the main body lining 432. The length of the main body lining 432 can be extended in the direction of the upper surface where the ring structure 213 is located. That is, the length of the main body lining 432 can be extended in the direction where the second point P2 is located. Figure 17 is a second exemplary view showing the structural characteristics of the main body lining according to the eighth embodiment of the present disclosure.

[0148] When the length of the main body lining 432 is extended, the restriction on the distribution area of the processing gas can be more enhanced than before. When the length of the main body lining 432 is extended, the plasma restriction can be more enhanced than before. When the length of the main body lining 432 is extended, the etching rate of the entire surface of the substrate W can be more increased than before. When the length of the main body lining 432 is extended, the etching rate of the edge portion of the substrate W can be more increased than before.

[0149] Referring to Figure 18 , the power provided by the driving module 510 can be used to reduce the length of the main body lining 432. The length of the main body lining 432 can be reduced in the direction of the lower surface where the external nozzle 320 is positioned. That is, the length of the main body lining 432 can be reduced in the direction where the first point P1 is positioned. Figure 18 is a third exemplary view showing the structural characteristics of the main body lining according to the eighth embodiment of the present disclosure.

[0150] When the length of the main body lining 432 is reduced, the restriction on the distribution area of the processing gas can be alleviated more than before. When the length of the main body lining 432 is reduced, the plasma restriction can be alleviated more than before. When the length of the main body lining 432 is reduced, the etching rate of the entire surface of the substrate W can be reduced more than before. When the length of the main body lining 432 is reduced, the etching rate of the edge portion of the substrate W can be reduced more than before.

[0151] As described above, the case where the third part 430 is formed to include the spacer 431 and the main body lining 432 has been described. The third part 430 can be formed of multiple components. For example, the third part 430 can be formed of two components including the spacer 431 and the main body lining 432, but is not limited thereto. The third part 430 can be formed of a single component. Referring to Figure 19 , when the third part 430 is formed of a single component, the third part 430 may not be divided into the spacer 431 and the main body lining 432.

[0152] When the third part 430 is formed of a single component, various structural features of the main body lining 432 can be applied to the third part 430. Various structural features of the main body lining 432 have been described above with reference to Figures 8 to 18 and thus their detailed description will be omitted herein. In addition, the third part 430 can be provided as a single-silicon main body lining containing only a silicon material, but is not limited thereto, and can be provided as a multi-silicon main body lining further containing materials other than the silicon material. Figure 19 is an exemplary view showing the internal structure of the upper ring assembly according to the second embodiment of the present disclosure.

[0153] As described above with reference to Figure 7 , the case where the nozzle unit 240 includes the internal nozzle 310, the external nozzle 320, and the upper ring assembly 330 has been described, but the present disclosure is not limited thereto. The nozzle unit 240 may also include only the internal nozzle 310 and the upper ring assembly 330. Referring to Figure 20 , the upper ring assembly 330 can be formed to be in close contact with the side surface of the internal nozzle 310. Obviously, referring to Figures 8 to 19The various structural features of the described upper ring assembly 330 can be equally applied to Figure 20 the upper ring assembly 330. Figure 20 is an exemplary view showing the internal structure of a showerhead unit according to a second embodiment of the present disclosure.

[0154] The present disclosure relates to a change in the structure of an upper ground ring for plasma confinement. The change is a change in the liner type that can confine plasma in the direction of the process gap in order to improve process effects by increasing the plasma density according to recent semiconductor integration and high-end processes. In the present disclosure, the upper ground ring can be manufactured by being divided into two body parts: an Al spacer and a Si body liner. One of the two manufactured body parts is an Al material spacer capable of maintaining ground with a heated liner, and the other is a Si material body liner for plasma confinement.

[0155] The body liner extends downward from the UGR in the liner structure and has the effect of concentrating the plasma ejected in the form of a gas from the upper showerhead. The length of the body liner extends in the direction of the processing volume for chamber pumping, thereby ensuring an EPD observation window, and operating an end effector such that there is no difference from the existing working process. In addition, the body liner is made of a single Si low-resistance material, which can solve the particle problem and enhance grounding. According to the present disclosure, a plasma confinement effect can be obtained by changing the UGR structure, and thus an improvement in ER uniformity and process effects can be expected.

[0156] Although embodiments of the present disclosure have been described with reference to the drawings, it will be apparent to those skilled in the art that the present disclosure can be implemented in other specific forms without departing from the technical concepts and features of the present disclosure. Therefore, the above embodiments are considered illustrative rather than restrictive in all respects.

Claims

1. Substrate processing equipment, including: a chamber housing providing a space in which a substrate is processed; A substrate supporting unit, disposed inside the chamber housing and supporting the substrate; A showerhead unit is disposed inside the chamber housing and provides a processing gas; as well as a plasma generating unit which generates plasma for processing the substrate by using the processing gas; Wherein, the nozzle unit comprises: a showerhead body, comprising a plurality of gas supply holes for providing the processing gas; and an upper ring assembly surrounding the spray head body, and The upper ring assembly includes a portion extending in a direction in which the substrate supporting unit is located.

2. The substrate processing apparatus according to claim 1, wherein: The nozzle body comprises: Internal sprinklers; and an external sprinkler head, surrounding the internal sprinkler head, and The gas supply hole is formed in the inner showerhead.

3. The substrate processing apparatus according to claim 1, wherein: The upper ring assembly comprises: Part I; a second portion disposed on one side below the first portion; and a third portion disposed on the other side below the first portion, and The third portion is grounded.

4. The substrate processing apparatus according to claim 3, wherein: The third portion is disposed closer to the shower head body than the second portion.

5. The substrate processing apparatus according to claim 3, wherein: The third part includes: a spacer providing a constant spacing between the spray head body and the second portion; and A body liner is coupled to the spacer and extends in a direction in which the substrate supporting unit is positioned.

6. The substrate processing apparatus according to claim 5, wherein: The spacer is provided with an oxide layer formed on a surface.

7. The substrate processing apparatus according to claim 6, wherein: The spacer is provided with an oxide layer formed on another surface except for a grounding surface.

8. The substrate processing apparatus according to claim 5, wherein: The spacer is formed of a metal material.

9. The substrate processing apparatus according to claim 5, wherein: The body lining includes a first material, and The first material is a silicon material.

10. The substrate processing apparatus according to claim 9, wherein: In addition to the first material, the body lining includes a second material, and The second material has a lower resistivity than the first material.

11. The substrate processing apparatus according to claim 10, wherein: The second material is a carbon material.

12. The substrate processing apparatus according to claim 1, wherein: The length of the extended portion is determined according to a distribution area of ​​the process gas or a confinement degree of the plasma or an etching rate of the substrate.

13. The substrate processing apparatus according to claim 1, wherein: The extended portion is formed linearly in the first direction or is formed to be inclined with respect to the first direction.

14. The substrate processing apparatus according to claim 13, wherein: The first direction is a direction connecting the substrate supporting unit and the shower head unit.

15. The substrate processing apparatus according to claim 1, wherein: The extended portion has an entire surface of a planar shape or one surface of a non-planar shape.

16. The substrate processing apparatus according to claim 15, wherein: The one surface is disposed in an inward direction within the chamber housing.

17. The substrate processing apparatus according to claim 1, wherein: The extended portion has a length that varies according to a plasma environment inside the chamber housing.

18. The substrate processing apparatus according to claim 1, wherein: The extended portion has a length shorter than a distance between the shower head unit and the substrate supporting unit.

19. A showerhead unit installed in an apparatus for processing a substrate by using plasma, the showerhead unit comprising: an internal showerhead including a plurality of gas supply holes for providing a process gas for generating a plasma; an outer sprinkler head surrounding the inner sprinkler head; as well as The upper ring assembly, surrounding the external sprinkler head, The upper ring assembly includes a portion extending in a direction in which a substrate supporting unit for supporting the substrate is located.

20. Substrate processing equipment, including: a chamber housing providing a space in which a substrate is processed; A substrate supporting unit, disposed inside the chamber housing and supporting the substrate; A showerhead unit is disposed inside the chamber housing and provides a processing gas; as well as a plasma generating unit which generates plasma for processing the substrate by using the processing gas; Wherein, the nozzle unit comprises: an internal showerhead including a plurality of gas supply holes for providing the process gas; an outer spray head surrounding the inner spray head; and The upper ring assembly, surrounding the external sprinkler head, The upper ring assembly comprises: Part I; a second portion disposed on one side below the first portion; and a third portion disposed on the other side below the first portion, grounded, and disposed closer to the external spray head than the second portion, and The third part includes: a spacer providing a constant spacing between the outer spray head and the second portion; and A body liner is coupled to the spacer and extends in a direction in which the substrate supporting unit is positioned.

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