Quantum chip processing system

Abstract

The invention relates to the field of quantum chip processing, and discloses a quantum chip processing system, which comprises an inert gas circulation device, a vacuum device, a transfer device, a cleaning unit and a drying unit, the inert gas circulation device is in an inert gas atmosphere, and the cleaning unit and the drying unit are arranged in the inert gas circulation device; the cleaning unit is used for cleaning the substrate and removing an oxide layer on the surface of the substrate; the drying unit is used for drying the cleaned substrate; the vacuum degree in the vacuum equipment is the same as that of the coating equipment, and the vacuum equipment and the coating equipment are located in the same vacuum atmosphere; and the transfer equipment is used for transferring the dried substrate into the vacuum equipment. The cleaning unit and the drying unit are both located in inert gas circulating equipment, and dirt caused by the fact that the substrate makes contact with the outside is avoided; substrate cleaning and film coating are communicated and interconnected through vacuum equipment, so that cleaning and film coating are all carried out under an anaerobic condition, and the substrate is prevented from being re-oxidized due to the fact that film coating is not carried out in time after an oxide layer is removed.

Description

Technical Field

[0001] The present application relates to the field of quantum chip processing, and particularly to a quantum chip processing system. Background Art

[0002] Currently, in order to process quantum chips with a higher number of qubits, multi-layer wiring and via process technologies are often used to achieve the longitudinal expansion of quantum chips, thereby fabricating quantum chips with higher qubits. Since the current via process uses silicon wafers for deep silicon etching, the use of silicon wafers becomes inevitable when preparing higher qubit quantum chips. However, during the current quantum chip processing, due to process technology problems, it is impossible to perform vacuum coating immediately after removing the oxide layer on the surface of the silicon wafer, resulting in the silicon wafer being re-oxidized when exposed to air. Therefore, during the quantum chip testing, due to the presence of the oxide layer on the silicon substrate surface, a large amount of energy dissipation occurs, leading to problems such as short decoherence time, large measurement and control noise, and poor chip quality of the quantum chip.

[0003] Therefore, how to solve the above technical problems should be the key concern of those skilled in the art. Summary of the Invention

[0004] The purpose of the present application is to provide a quantum chip processing system to avoid the re-oxidation caused by the contact of the substrate with air after cleaning and improve the quality of the quantum chip.

[0005] To solve the above technical problems, the present application provides a quantum chip processing system, including:

[0006] An inert gas circulation device, a vacuum device, a transfer device, a cleaning unit, and a drying unit.

[0007] The inert gas circulation device is in an inert gas atmosphere, and the cleaning unit and the drying unit are arranged in the inert gas circulation device;

[0008] The cleaning unit is used to clean the substrate and remove the oxide layer on the surface of the substrate; the drying unit is used to dry the cleaned substrate;

[0009] The vacuum degree in the vacuum device is the same as that in the coating device, and the vacuum device and the coating device are in the same vacuum atmosphere;

[0010] The transfer device is used to transfer the dried substrate to the vacuum device.

[0011] Optionally, it further includes:

[0012] A purging unit arranged in the inert gas circulation device, and the purging unit includes a sampling device, an environment conversion device, a purging device, and a transfer device;

[0013] The sample injection device is used to feed the substrate into the environment conversion device;

[0014] The environment conversion device is used to convert the air environment into an inert gas environment after the substrate enters;

[0015] The purging device is used to purge the surface of the substrate that has passed through the environment conversion device to remove surface dirt;

[0016] The transfer device is used to transfer the purged substrate to the cleaning unit.

[0017] Optionally, the environment conversion device includes an environment conversion chamber, a first vacuum pumping assembly, and an inert gas filling assembly;

[0018] The environment conversion chamber includes a first switch door and a second switch door arranged opposite to each other;

[0019] The first vacuum pumping assembly is used to pump the environment conversion chamber to a vacuum;

[0020] The inert gas filling assembly is used to introduce inert gas into the evacuated environment conversion chamber.

[0021] Optionally, the cleaning unit includes a first cleaning assembly and a second cleaning assembly;

[0022] The first cleaning assembly is used to remove the oxide layer on the surface of the substrate through a first chemical solution;

[0023] The second cleaning assembly is used to clean the first chemical solution on the surface of the substrate.

[0024] Optionally, the cleaning unit further includes a third cleaning assembly;

[0025] The third cleaning assembly is used to clean the surface of the substrate through a second chemical solution to increase the adhesion of the substrate surface.

[0026] Optionally, the cleaning unit further includes a first fixture, and the first fixture is used to clamp the substrate in the first cleaning assembly and the second cleaning assembly.

[0027] Optionally, the cleaning unit further includes an organic cleaning device, and the organic cleaning device is used to remove organic contaminants on the surface of the substrate.

[0028] Optionally, the organic cleaning device includes at least one of an NMP cleaning assembly, an IPA cleaning assembly, and an acetone cleaning assembly.

[0029] Optionally, the drying unit includes a second fixture and a heating component;

[0030] The second fixture is used to pick up the cleaned substrate to the heating component and place the dried substrate on the transfer device;

[0031] The heating component is used to dry the cleaned substrate.

[0032] Optionally, the vacuum device includes a conveying device, a second vacuum pumping assembly, a first chamber and a second chamber. The first chamber includes a third switch door and a fourth switch door arranged oppositely, and the second chamber includes the fourth switch door and a fifth switch door arranged oppositely;

[0033] The conveying device is used to convey the dried substrate transferred by the transfer device to the first chamber; and convey the dried substrate from the first chamber to the second chamber;

[0034] The second vacuum pumping assembly is used to pump the first chamber to vacuum after the dried substrate is conveyed to the first chamber, and pump the second chamber to vacuum after the dried substrate is conveyed to the second chamber; the vacuum degree of the second chamber is equal to the vacuum degree of the coating device, and the vacuum degree of the first chamber is less than the vacuum degree of the second chamber.

[0035] A quantum chip processing system provided by the present application includes: an inert gas circulation device, a vacuum device, a transfer device, a cleaning unit, and a drying unit. The inert gas circulation device is in an inert gas atmosphere, and the cleaning unit and the drying unit are arranged in the inert gas circulation device; the cleaning unit is used to clean the substrate and remove the oxide layer on the surface of the substrate; the drying unit is used to dry the cleaned substrate; the vacuum degree in the vacuum device is the same as the vacuum degree of the coating device, and the vacuum device and the coating device are in the same vacuum atmosphere; the transfer device is used to transfer the dried substrate into the vacuum device.

[0036] It can be seen that in the processing system of the present application, the cleaning unit can remove the oxide layer cleaning area on the surface of the substrate, and the drying unit can dry the cleaned substrate. The cleaning unit and the drying unit are both in the inert gas circulation device, that is, both in an inert gas atmosphere, to avoid dirt caused by the substrate contacting the outside. Moreover, after the substrate is cleaned, it is transferred into the vacuum device. The vacuum device and the coating device are in the same vacuum atmosphere and have the same vacuum degree. The substrate cleaning and coating are interconnected through the vacuum device, so that the substrate can be processed from cleaning to coating under anaerobic conditions, avoiding the re-oxidation of the substrate surface due to the failure to coat the substrate in time after removing the oxide layer, ensuring that there is no oxide layer between the metal coating and the substrate surface, reducing energy dissipation, and improving the quality of the quantum chip. Description of the Drawings

[0037] To more clearly illustrate the technical solutions of the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0038] Figure 1 Structural schematic of a quantum chip processing system provided by an embodiment of the present application Figure 1 ;

[0039] Figure 2 Structural schematic of a cleaning unit provided by an embodiment of the present application Figure 1 ;

[0040] Figure 3 Structural schematic diagram of a drying unit provided by an embodiment of the present application;

[0041] Figure 4 Structural schematic of a quantum chip processing system provided by an embodiment of the present application Figure 2 ;

[0042] Figure 5 Structural schematic diagram of a purging unit provided by an embodiment of the present application;

[0043] Figure 6 Structural schematic of a cleaning unit provided by an embodiment of the present application Figure 2 ;

[0044] Figure 7 Structural schematic diagram of a vacuum device provided by an embodiment of the present application;

[0045] In the figure, 1 is an inert gas circulation device, 2 is a vacuum device, 3 is a transfer device, 4 is a coating device, 11 is a cleaning unit, 12 is a drying unit, 13 is a purging unit, 111 is a first cleaning component, 112 is a second cleaning component, 113 is a third cleaning component, 114 is an NMP cleaning component, 115 is an IPA cleaning component, 116 is an acetone cleaning component, 121 is a second fixture, 122 is a heating component, 131 is a sample injection device, 132 is an environment conversion device, 133 is a purging device, 134 is a transfer device, 21 is a conveying device, 22 is a first chamber, 23 is a second chamber, 24 is a second vacuum pumping component. Detailed implementation manners

[0046] To enable those skilled in the art to better understand the solution of this application, the following further detailed description of this application will be given in conjunction with the accompanying drawings and specific embodiments. Obviously, the described embodiments are only a part of the embodiments of this application, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in this application without creative efforts belong to the scope protected by this application.

[0047] In the following description, many specific details are set forth in order to fully understand the present invention. However, the present invention can also be implemented in other ways different from those described herein. Those skilled in the art can make similar extensions without departing from the connotation of the present invention. Therefore, the present invention is not limited by the specific embodiments disclosed below.

[0048] As described in the background art section, currently, during the processing of quantum chips, it is impossible to immediately perform vacuum coating after removing the silicon dioxide on the surface of the silicon wafer, resulting in the re-oxidation of the surface of the silicon wafer when it is exposed to the air. During the testing of quantum chips, due to the presence of the oxide layer on the surface of the silicon substrate, a large amount of energy dissipation occurs, resulting in problems such as a short decoherence time of the chip and a large measurement and control noise of the chip.

[0049] In view of this, this application provides a quantum chip processing system. Please refer to Figure 1 , including:

[0050] An inert gas circulation device 1, a vacuum device 2, a transfer device 3, a cleaning unit 11, and a drying unit 12.

[0051] The inert gas circulation device 1 is in an inert gas atmosphere, and the cleaning unit 11 and the drying unit 12 are arranged in the inert gas circulation device 1.

[0052] The cleaning unit 11 is used to clean the substrate and remove the oxide layer on the surface of the substrate; the drying unit 12 is used to dry the cleaned substrate.

[0053] The vacuum degree in the vacuum device 2 is the same as that in the coating device 4, and the vacuum device 2 and the coating device 4 are in the same vacuum atmosphere.

[0054] The transfer device 3 is used to transfer the dried substrate into the vacuum device 2.

[0055] The quantum chip processing system may further include a coating device 4 for coating the surface of the substrate.

[0056] The inert gas can be nitrogen, helium, argon, etc., which is not limited in this application.

[0057] The substrate processed in the processing system of this application can be a silicon substrate.

[0058] After the substrate is cleaned and dried, it enters the vacuum device 2 from the inert gas circulation device 1 and is transferred to the coating device 4 for coating after passing through the vacuum device 2.

[0059] As an implementable mode, as Figure 2 shown, the cleaning unit 11 includes a first cleaning component 111 and a second cleaning component 112; the first cleaning component 111 is used to remove the oxide layer on the substrate surface with a first chemical solution; the second cleaning component 112 is used to clean the first chemical solution on the substrate surface.

[0060] The first chemical solution can be a BOE cleaning agent, that is, a mixed solution of hydrofluoric acid and deionized water. The second cleaning component 112 uses deionized water to clean the substrate and cleans the residual first chemical solution on the substrate surface.

[0061] When the substrate is cleaned in the first cleaning component 111 and the second cleaning component 112, it can be placed in a flower basket for cleaning. The cleaning methods of the first cleaning component 111 and the second cleaning component 112 can be ultrasonic cleaning to enhance the cleaning effect.

[0062] In order to increase the adhesion between the coating and the substrate surface, the cleaning unit 11 can further include a third cleaning component 113; the third cleaning component 113 is used to clean the substrate surface with a second chemical solution to increase the adhesion of the substrate surface.

[0063] The second chemical solution can be a piranha cleaning solution, that is, a mixed solution of sulfuric acid and hydrogen peroxide. By cleaning with the piranha cleaning solution, the hydroxyl groups on the substrate surface can be increased, the hydrophilicity of the substrate surface can be improved, and thus the adhesion of the coating can be improved.

[0064] Furthermore, as an implementable mode, the cleaning unit 11 can further include a first fixture, and the first fixture is used to clamp the substrate in the first cleaning component 111 and the second cleaning component 112. Among them, the first fixture can be an automatic fixture.

[0065] The first fixture takes out the substrate from the first chemical solution of the first cleaning component 111 and puts it into the second chemical solution of the second cleaning component 112, avoiding direct contact by the operator's hands, thereby avoiding harm to the operator caused by chemical drugs.

[0066] As an implementable mode, as Figure 3 shown, the drying unit 12 includes a second fixture 121 and a heating component 122; the second fixture 121 is used to clamp the cleaned substrate to the heating component 122 and place the dried substrate on the transfer device 3; the heating component 122 is used to dry the cleaned substrate.

[0067] The heating component 122 can be a heating plate or other heatable components. After the washed substrate is dried, the second fixture 121 removes the dried substrate from the heating component 122 and transfers it to the transfer device 3, so that the transfer device 3 transfers the dried substrate to the vacuum device 2.

[0068] The vacuum device 2 can have only one chamber. After evacuating this chamber, the vacuum degree in the chamber is the same as that of the coating device 4. The dried substrate is transferred into this chamber and then transferred to the coating device 4. The vacuum device 2 can also include multiple chambers, which will be described in the following embodiments.

[0069] Since the substrate is in the same vacuum environment as the coating device 4 before entering the coating device 4, it is possible to avoid the problem in the traditional technology that when sampling, it is necessary to break the vacuum environment of the coating machine, resulting in an extremely slow vacuum pumping time and thus an overly long process time.

[0070] In the processing system of this embodiment, the cleaning unit 11 can remove the oxide layer cleaning area on the surface of the substrate, and the drying unit 12 can dry the washed substrate. Both the cleaning unit 11 and the drying unit 12 are in the inert gas circulation device 1, that is, in an inert gas atmosphere, to avoid dirt caused by the substrate contacting the outside. Moreover, after the substrate is cleaned, it is transferred to the vacuum device 2. The vacuum device 2 and the coating device 4 are in the same vacuum atmosphere and have the same vacuum degree. The substrate cleaning and coating are interconnected through the vacuum device 2, realizing that the substrate is processed from cleaning to coating under anaerobic conditions, avoiding the re-oxidation of the substrate surface after the oxide layer is removed due to the failure to coat the film in time, ensuring that there is no oxide layer between the metal coating and the substrate surface, reducing energy dissipation, and improving the quality of the quantum chip.

[0071] Please refer to Figure 4 and Figure 5 , based on the above embodiments, in an embodiment of the present application, the quantum chip processing system may further include:

[0072] A purging unit 13 provided in the inert gas circulation device 1, and the purging unit 13 includes a sample injection device 131, an environment conversion device 132, a purging device 133, and a transfer device 134;

[0073] The sample injection device 131 is used to send the substrate into the environment conversion device 132;

[0074] The environment conversion device 132 is used to convert the air environment into an inert gas environment after the substrate enters;

[0075] The purging device 133 is used to purge the surface of the substrate passing through the environment conversion device 132 to remove surface dirt;

[0076] The transfer device 134 is used to transfer the substrate after purging to the cleaning unit 11.

[0077] Among them, the environment conversion device 132 includes an environment conversion chamber, a first vacuum pumping assembly, and an inert gas filling assembly;

[0078] The environment conversion chamber includes a first switch door and a second switch door arranged oppositely;

[0079] The first vacuum pumping assembly is used to pump the environment conversion chamber to a vacuum;

[0080] The inert gas filling assembly is used to introduce inert gas into the evacuated environment conversion chamber. Among them, the air pressure of the inert gas in the environment conversion chamber is equal to the air pressure of the inert gas in the inert gas circulation device 1.

[0081] The sample injection device 131 may include a third fixture. The substrate is placed in the third fixture of the sample injection device 131, and then the sample feeding starts. The first switch door of the environment conversion chamber is opened, the substrate enters the environment conversion chamber, the first switch door is closed, the first vacuum pumping assembly performs vacuum pumping to remove the oxygen in the environment conversion chamber. After the vacuum degree of the environment conversion chamber meets the preset requirements, high-purity inert gas is re-injected. After the air pressure of the inert gas in the environment conversion chamber is consistent with the air pressure of the inert gas in the inert gas circulation device 1, the second switch door is opened to enable the substrate to enter the inert gas circulation space. The purging device 133 purges the substrate with inert gas. After the purging is completed, the substrate is placed in a flower basket through the transfer device 134 for the next cleaning step.

[0082] The environment conversion chamber includes a first switch door and a second switch door, which can not only remove the oxygen entering the chamber during sample injection by vacuum pumping, but also the size of the chamber is controllable, the vacuum pumping of the chamber alone is faster, and it does not affect the overall environment of the inert gas circulation space.

[0083] Please refer to Figure 6 , based on any of the above embodiments, in an embodiment of the present application, the cleaning unit 11 may further include an organic cleaning device, and the organic cleaning device is used to remove organic contaminants on the surface of the substrate.

[0084] As an implementable manner, the organic cleaning device includes at least one of an NMP cleaning assembly 114, an IPA cleaning assembly 115, and an acetone cleaning assembly 116.

[0085] In the NMP cleaning component 114, the substrate is cleaned using an NMP (N-Methyl pyrrolidone) cleaning solution. In the IPA cleaning component 115, the substrate is cleaned using an IPA (iso-Propyl alcohol) cleaning solution. In the acetone cleaning component 116, the substrate is cleaned using an acetone cleaning solution.

[0086] After the organic cleaning device finishes cleaning, the second cleaning component 112 is used to clean the substrate with deionized water to remove the organic solvents on the surface of the substrate.

[0087] The cleaning method of the organic cleaning device for the substrate can be ultrasonic cleaning to enhance the cleaning effect.

[0088] It should be noted that when the organic cleaning device includes at least two of the NMP cleaning component 114, the IPA cleaning component 115, and the acetone cleaning component 116, the cleaning sequence in this application is not limited and can be set by itself.

[0089] During organic cleaning, the first fixture can also be used to take out the substrate from any cleaning component and put it into any cleaning component, avoiding direct contact by the operator's hands, thereby preventing chemical drugs from harming the operator.

[0090] It should be noted that when the substrate is subjected to both organic cleaning and inorganic cleaning, organic cleaning is performed first, and then inorganic cleaning. After the organic cleaning device finishes cleaning the substrate, an inert gas is used to dry the substrate. After drying, the substrate is transferred to the first cleaning component 111 for cleaning.

[0091] As Figure 7 shown, based on any of the above embodiments, in an embodiment of the present application, in a quantum chip processing system, the vacuum device 2 includes a transporting device 21, a second vacuum pumping component 24, a first chamber 22, and a second chamber 23. The first chamber 22 includes a third switch door and a fourth switch door arranged opposite to each other. The second chamber 23 includes the fourth switch door and a fifth switch door arranged opposite to each other;

[0092] The transporting device 21 is used to transport the dried substrate transferred by the transfer device 3 to the first chamber 22; and transport the dried substrate from the first chamber 22 to the second chamber 23;

[0093] The second vacuum pumping assembly 24 is used to pump the first chamber 22 to a vacuum after the dried substrate is transported to the first chamber 22, and to pump the second chamber 23 to a vacuum after the dried substrate is transported to the second chamber 23; the degree of vacuum in the second chamber 23 is equal to the degree of vacuum of the coating equipment 4, and the degree of vacuum in the first chamber 22 is less than the degree of vacuum in the second chamber 23.

[0094] The first chamber 22 and the second chamber 23 share the fourth switch door.

[0095] The dried substrate is transferred by the transfer device 3 onto the transport device 21. The third switch door is opened, and the transport device 21 transports the substrate into the first chamber 22, and then the third switch door is closed. The second vacuum pumping assembly 24 pumps the first chamber 22 to a vacuum. When the degree of vacuum in the first chamber 22 drops to a certain value, the fourth switch door is opened, and the substrate enters the second chamber 23 under the action of the transport device 21, and then the fourth switch door is closed. The second vacuum pumping assembly 24 pumps the second chamber 23 to a vacuum. When the degree of vacuum in the second chamber 23 is equal to the degree of vacuum of the coating equipment 4, the fifth switch door is opened, and the substrate is transported out of the second chamber 23 and then transferred to the coating equipment 4 for coating.

[0096] In this embodiment, the vacuum device 2 adopts a three-stage valve (the third switch door, the fourth switch door, and the fifth switch door) structure to form two chambers. On the one hand, it can avoid the oxidation of the substrate caused by the direct introduction of oxygen during sample transfer. On the other hand, the first chamber 22 between the third switch door and the fourth switch door can realize the conversion from an inert gas atmosphere to a vacuum environment, converting the inert gas environment into a vacuum environment. The sizes of the first chamber 22 and the second chamber 23 are controllable, which can achieve rapid vacuum pumping, avoiding the problem that the traditional sample introduction requires breaking the vacuum environment of the coating machine, resulting in extremely slow vacuum pumping time and thus too long process time.

[0097] Next, a specific situation will be used to introduce the quantum chip processing system of the present application.

[0098] The quantum chip processing system includes an inert gas circulation device, a vacuum device, a transfer device, a purging unit, a cleaning unit, and a drying unit provided in the inert gas circulation device;

[0099] The purging unit includes a sample introduction device, an environment conversion device, a purging device, and a transfer device; the sample introduction device is used to send the substrate into the environment conversion device; the environment conversion device is used to convert the air environment into an inert gas environment after the substrate enters; the purging device is used to purge the surface of the substrate passing through the environment conversion device to remove surface dirt; the transfer device is used to transfer the purged substrate to the cleaning unit;

[0100] The environment conversion device includes an environment conversion chamber, a first vacuum pumping assembly, and an inert gas filling assembly; the environment conversion chamber includes a first switch door and a second switch door arranged oppositely; the first vacuum pumping assembly is used to pump the environment conversion chamber to a vacuum; the inert gas filling assembly is used to introduce inert gas into the evacuated environment conversion chamber;

[0101] The cleaning unit includes an organic cleaning device, a third cleaning assembly, a first cleaning assembly, and a second cleaning assembly. The organic cleaning device includes an NMP cleaning assembly, an IPA cleaning assembly, and an acetone cleaning assembly;

[0102] The drying unit includes a second fixture and a heating component; the second fixture is used to clamp the cleaned substrate to the heating component and place the dried substrate on the transfer device; the heating component is used to dry the cleaned substrate;

[0103] The vacuum device includes a conveying device, a second vacuum pumping assembly, a first chamber, and a second chamber. The first chamber includes a third switch door and a fourth switch door arranged oppositely, and the second chamber includes a fourth switch door and a fifth switch door arranged oppositely; the conveying device is used to convey the dried substrate transferred by the transfer device to the first chamber; and convey the dried substrate from the first chamber to the second chamber; the second vacuum pumping assembly is used to pump the first chamber to a vacuum after the dried substrate is conveyed to the first chamber, and pump the second chamber to a vacuum after the dried substrate is conveyed to the second chamber; the vacuum degree of the second chamber is equal to the vacuum degree of the coating device, and the vacuum degree of the first chamber is less than the vacuum degree of the second chamber.

[0104] In summary, the advantages of the quantum chip processing system in this application are as follows: It can realize the processing of superconducting quantum chips with higher quality and more qubits, avoid the oxidation of quantum chips during the processing, and at the same time operate under the control of mechanical equipment in an inert gas atmosphere, reducing the influence of pollution sources such as people, making the surface cleanliness of the chip higher, resulting in higher quality of the quantum chip film, which lays a foundation for the subsequent preparation of high-quality, multi-bit quantum chips. Specifically, such as:

[0105] 1. The system is equipped with a two-stage valve structure of a first switch door and a second switch door, which can not only remove the oxygen entering the cavity during sample injection by pumping the vacuum, but also the size of the cavity is controllable, and the cavity can be pumped to a vacuum faster separately without affecting the overall environment of the inert gas circulation space.

[0106] 2. The cleaning system is controlled by an automatic fixture and operates in an inert gas atmosphere. On the one hand, it can avoid the re-oxidation of the wafer after cleaning, and on the other hand, the automatic fixture can also avoid the harm of chemical agents to the operators.

[0107] 3. The vacuum device adopts a three-stage valve structure with a third switch door, a fourth switch door, and a fifth switch door. On the one hand, it can avoid the oxidation of the wafer caused by the direct introduction of oxygen during sample transfer. On the other hand, the cavity between the third switch door and the fourth switch door can achieve the conversion from an inert gas atmosphere to a vacuum environment, converting the inert gas environment into a vacuum environment. The size of the vacuum chamber is controllable, enabling rapid evacuation of the vacuum, avoiding the need to break the vacuum environment of the coating machine during traditional sample introduction, which leads to an extremely slow evacuation time and thus a too long process time.

[0108] The various embodiments in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments. For the same or similar parts among the various embodiments, reference can be made to each other.

[0109] The quantum chip processing system provided in this application has been introduced in detail above. Specific examples are used in this article to elaborate on the principle and implementation manner of this application. The description of the above embodiments is only used to help understand the solution and its core idea of this application. It should be noted that for those of ordinary skill in the art of this technology, without departing from the principle of this application, several improvements and modifications can be made to this application, and these improvements and modifications also fall within the protection scope of the claims of this application.

Claims

1. A quantum chip processing system, characterized in that, Including: An inert gas circulation device, a vacuum device, a transfer device, a cleaning unit, and a drying unit. The inert gas circulation device is in an inert gas atmosphere, and the cleaning unit and the drying unit are arranged in the inert gas circulation device. The cleaning unit is used to clean the substrate and remove the oxide layer on the surface of the substrate; the drying unit is used to dry the cleaned substrate. The vacuum degree in the vacuum device is the same as that in the coating device, and the vacuum device and the coating device are in the same vacuum atmosphere. The transfer device is used to transfer the dried substrate into the vacuum device.

2. The quantum chip processing system according to claim 1, characterized in that, It further includes: A purging unit arranged in the inert gas circulation device, and the purging unit includes a sample injection device, an environment conversion device, a purging device, and a transfer device. The sample injection device is used to send the substrate into the environment conversion device. The environment conversion device is used to convert the air environment into an inert gas environment after the substrate enters. The purging device is used to purge the surface of the substrate passing through the environment conversion device to remove surface dirt. The transfer device is used to transfer the purged substrate to the cleaning unit.

3. The quantum chip processing system according to claim 2, characterized in that, The environment conversion device includes an environment conversion chamber, a first vacuum pumping component, and an inert gas filling component. The environment conversion chamber includes a first switch door and a second switch door arranged opposite to each other. The first vacuum pumping component is used to pump the environment conversion chamber to a vacuum. The inert gas filling component is used to introduce inert gas into the evacuated environment conversion chamber.

4. The quantum chip processing system according to claim 1, characterized in that, The cleaning unit includes a first cleaning component and a second cleaning component. The first cleaning component is used to remove the oxide layer on the surface of the substrate with a first chemical solution. The second cleaning component is used to clean the first chemical solution on the surface of the substrate.

5. The quantum chip processing system according to claim 4, characterized in that, The cleaning unit further includes a third cleaning component. The third cleaning component is used to clean the surface of the substrate with a second chemical solution to increase the adhesion of the substrate surface.

6. The quantum chip processing system according to claim 4, characterized in that, The cleaning unit further includes a first fixture, and the first fixture is used to clamp the substrate in the first cleaning component and the second cleaning component.

7. The quantum chip processing system according to claim 1, characterized in that, The cleaning unit further includes an organic cleaning device, and the organic cleaning device is used to remove organic contaminants on the surface of the substrate.

8. The quantum chip processing system according to claim 7, characterized in that, The organic cleaning device includes at least one of an NMP cleaning component, an IPA cleaning component, and an acetone cleaning component.

9. The quantum chip processing system according to claim 1, characterized in that, The drying unit includes a second fixture and a heating component. The second fixture is used to clamp the cleaned substrate to the heating component and place the dried substrate on the transfer device. The heating component is used to dry the cleaned substrate.

10. The quantum chip processing system according to any one of claims 1 to 9, characterized in that, The vacuum device includes a conveying device, a second vacuum pumping component, a first chamber, and a second chamber. The first chamber includes a third switch door and a fourth switch door arranged opposite to each other, and the second chamber includes the fourth switch door and a fifth switch door arranged opposite to each other. The conveying device is used to convey the dried substrate transferred by the transfer device to the first chamber; and convey the dried substrate from the first chamber to the second chamber. The second evacuation assembly is used to evacuate the first chamber after the dried substrate is transported to the first chamber, and evacuate the second chamber after the dried substrate is transported to the second chamber; the vacuum degree of the second chamber is equal to the vacuum degree of the coating equipment, and the vacuum degree of the first chamber is less than that of the second chamber.

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