Built-in balance degree measuring apparatus for wafer processing chamber and balance degree adjusting method using same

Abstract

The present invention relates to a built-in balance degree measurement device for a wafer processing chamber and a balance degree adjustment method using the same, and more particularly, to a built-in balance degree measurement device for a wafer processing chamber, comprising a sensor unit provided on the bottom surface of the wafer processing chamber and a control unit for receiving information from the sensor unit and measuring the balance degree of a heater, the present invention relates to a built-in balance degree adjusting device for a wafer processing chamber and a balance degree adjusting method using the same, and aims to provide a built-in balance degree adjusting device for a wafer processing chamber, which can perform precise measurement, does not require an opening / closing process of the chamber, can improve the effectiveness of operation, and also can improve the durability of the chamber.

Description

Technical Field

[0001] The present invention relates to an in - built balance measurement device for a wafer processing chamber and a balance adjustment method using the same, and more particularly to an in - built balance adjustment unit provided on the bottom surface of the wafer processing chamber for adjusting the balance of a heater or the like, which can perform precise measurement without the need for a setting and removal process before and after measurement, does not require the opening and closing process of the chamber, can improve the work efficiency, and at the same time improve the durability of the chamber, and an in - built balance adjustment device for a wafer processing chamber and a balance adjustment method using the same. Background Art

[0002] Refer to Figure 1 , generally, the wafer processing chamber 1 is used to perform processes such as deposition or etching on the wafer W accommodated therein.

[0003] The wafer W is placed inside the above - mentioned wafer processing chamber 1, and at the same time, a heater 2 for heating the wafer W to a specific temperature is provided. A showerhead 4 is provided above the heater 2 to supply the required gas. With this structure, the above - mentioned wafer W performs a specified processing process. At this time, for the precise processing of the above - mentioned wafer W, the balance of the heater 2 or the like is particularly important. That is, the heater 2 is supported by a shaft 5, and the shaft 5 is lifted and lowered by a transfer device 3. The transfer device 3 may include a plurality of actuators 31 provided around the shaft 3 and a support portion 32 lifted and lowered by the actuators 31. The support portion 32 supports one point of the shaft 5. As the support portion 32 is lifted and lowered, the shaft 5 and the heater 2 can be lifted and lowered. At this time, the support portion 32 can be lifted and lowered by a ball screw 33 rotated by the actuator 31.

[0004] On the other hand, when the heater 2 reaches the final position, it is necessary to form a balance. In order to confirm the balance of the heater 2, a specified measurement device is being used.

[0005] As a conventional measurement device, a so - called insertion - type measurement device that is inserted into the chamber as needed for measurement is used. The above - mentioned insertion - type measurement device uses the method of opening the chamber, configuring the measurement device at a specific position and then performing measurement, and after the measurement is completed, removing the measurement device outside and closing the chamber again.

[0006] Therefore, in the above - mentioned prior art, there are problems such as repeating the process of setting and removing the measurement device at a specific location, making it difficult to accurately measure, reducing the work efficiency through the repeated opening and closing process of the chamber, and also reducing the durability of the chamber.

[0007] On the other hand, the above - mentioned prior art is technical information that the inventor has for deriving the present invention or obtained in the process of deriving the present invention, and is not necessarily prior art publicly known to the general public before applying for the present invention.

[0008] Prior art documents

[0009] Patent documents

[0010] (Patent Document 1) Korean Patent No. 10-1388226 (authorized on April 16, 2014)

[0011] (Patent Document 2) Korean Patent Publication No. 10-2006-0085507 (published on July 27, 2006) Summary of the invention

[0012] Technical problem

[0013] In the process of solving the above problems, an object of the present invention is to provide an in-built balance adjustment unit provided on the bottom surface of a wafer processing chamber for adjusting the balance of a heater or the like, which can perform precise measurement without the need for a setup and removal process before and after measurement, does not require the opening and closing process of the chamber, can improve the work efficiency, and at the same time improve the durability of the chamber. An in-built balance adjustment device for a wafer processing chamber and a balance adjustment method using the same

[0014] The problems to be solved by the present invention are not limited to the above-mentioned problems. Those of ordinary skill in the technical field to which the present invention pertains can clearly understand other problems to be solved not mentioned from the following description.

[0015] Solution to the problem

[0016] The balance measurement device according to an embodiment of the present invention includes: a sensor unit provided on the bottom surface of the wafer processing chamber; and a control unit that receives information from the sensor unit and measures the balance of the heater.

[0017] At this time, the sensor unit may include: an inner sensor unit disposed on the bottom surface of the wafer processing chamber and having a plurality of sensors arranged in a circumferential direction around the shaft supporting the heater; and an outer sensor unit disposed outside the inner sensor unit. The inner sensor unit measures the distance between the bottom surface and the lower side surface of the heater, and the outer sensor unit measures the distance between the bottom surface and the lower side surface of the nozzle.

[0018] Further, the balance measurement unit may include a sensor setting unit disposed on the bottom surface for placing the sensor unit. The bottom surface includes: a placement portion that is recessed at a specific depth on the lower side of the bottom surface for placing the sensor unit; and an opening portion formed above the placement portion and communicating with the interior of the wafer processing chamber. The sensor setting unit includes: a protective cover made of a transparent material, inserted into the placement portion; a fixing unit disposed below the protective cover and snapped into the placement portion; and a sensor bracket inserted into the fixing unit for accommodating the sensor unit.

[0019] Further, the fixing unit may include: a fixing unit body having a hollow cylindrical shape into which the sensor bracket is inserted; and a locking portion protruding horizontally from the inner side surface of the fixing unit body. The sensor bracket includes: a sensor bracket body for placing the sensor unit; and a protruding portion protruding from one side surface of the sensor bracket body. The sensor bracket body is inserted into the interior of the fixing unit body, and the protruding portion is locked to the locking portion.

[0020] The built-in balance measurement device for a wafer processing chamber according to an embodiment of the present invention may further include a sealing ring disposed between the protective cover and the opening portion.

[0021] The balance adjustment method for a wafer processing chamber according to an embodiment of the present invention uses the balance measurement device described in the above embodiment. In the balance adjustment method, the distance from the bottom surface to the heater or the nozzle is measured by the sensor unit disposed on the bottom surface of the wafer processing chamber, and the balance of the heater is adjusted by the control unit.

[0022] Further, the heater may be lifted and lowered by a transfer device. The transfer device includes: a plurality of support portions for supporting the shaft of the heater to lift and lower; and a plurality of actuators for individually lifting and lowering the support portions. The control unit individually controls the actuators according to the measured distance to adjust the balance of the heater.

[0023] Further, the balance adjustment method for a wafer processing chamber according to an embodiment of the present invention may include: an eleventh step of disposing the heater at a specific position to perform the accuracy and compensation of the sensor unit; a twelfth step of measuring the distance between the bottom surface and the heater using the inner sensor unit and calculating a heater measurement value; a thirteenth step of calculating a heater difference value, which is the difference between a predetermined heater design value and the heater measurement value, as the distance between the heater and the bottom surface; and a fourteenth step of, when the heater difference value is within a specific range, determining that the accuracy of the sensor unit is satisfied and ending the sensor compensation, and when the heater difference value exceeds the specific range, compensating the sensor unit and then performing the twelfth step.

[0024] Further, in the twelfth step described above, after continuously measuring the plurality of inner sensor parts for a specific time, the measured values can be averaged to calculate the measured value.

[0025] Moreover, the method for adjusting the balance of a wafer processing chamber according to an embodiment of the present invention may include: a twenty - first step of disposing the heater at a specific position to measure and adjust the balance of the heater; a twenty - second step of measuring the distance between the bottom surface and the heater using the inner sensor part to calculate a heater measured value, and measuring the distance between the bottom surface and the showerhead using the outer sensor part to calculate a showerhead measured value; a twenty - third step of calculating a heater difference value which is the difference between a predetermined heater design value and the heater measured value, and calculating a showerhead difference value which is the difference between a predetermined showerhead design value and the showerhead measured value as the distance between the showerhead and the bottom surface; a twenty - fourth step of calculating a difference value CE between the heater difference value and the showerhead difference value; a twenty - fifth step of, when the difference value CE is within a predetermined specific range, determining that the heater is in a balanced state, and when the difference value CE exceeds the specific range, balancing the heater and re - executing the twenty - second step. In the twenty - fifth step, in order to balance the heater, the control unit individually drives the actuator in the transfer device of the heater to lift the heater.

[0026] Also, in the twenty - fourth step, the difference value CE can arrange the inner sensor part and the outer sensor part in the same quantity, calculate the difference values at different locations of the inner sensor part and the outer sensor part, and then determine whether the sum of the difference values at different locations is within a specific range.

[0027] Effects of the Invention

[0028] As described above, according to the present invention, there is no need for a setup and removal process before and after measurement, precise measurement can be performed, there is no need for a chamber opening and closing process, the work efficiency can be improved, and at the same time, the durability of the chamber can be enhanced.

[0029] The effects of the present invention are not limited to the above - mentioned effects, and those of ordinary skill in the technical field to which the present invention pertains can clearly understand other effects not mentioned from the following description. Brief Description of the Drawings

[0030] Figure 1 It is a schematic diagram of a wafer processing chamber according to the prior art.

[0031] Figure 2 and Figure 3Schematic diagram and perspective view of a measurement device according to an embodiment of the present invention.

[0032] Figure 4 and Figure 5 Combination diagram and separation diagram of a sensor fixing part in a measurement device according to an embodiment of the present invention.

[0033] Figure 6 Flowchart showing a sensor compensation method according to an embodiment of the present invention.

[0034] Figure 7 Flowchart showing a balance degree adjustment method according to an embodiment of the present invention.

[0035] (Description of reference numerals)

[0036] 1: Wafer processing chamber 2: Heater

[0037] 3: Transfer device 4: Sprayer

[0038] 5: Shaft 10: Balance degree measurement device

[0039] 11: Bottom surface 31: Actuator

[0040] 32: Support part 100: Sensor part

[0041] 110: Outer sensor part 111: Placement part

[0042] 112: Opening part 120: Inner sensor part

[0043] 200: Sensor setting part 210: Protective cover

[0044] 220: Fixing part 230: Sensor bracket

[0045] 250: Sealing ring 2210: Fixing part body

[0046] 2220: Locking part 230: Sensor bracket

[0047] 2310: Sensor bracket body 2320: Protrusion

[0048] CON: Control part Detailed implementation manners

[0049] In the present invention, the accompanying drawings may be represented in an exaggerated manner for the purpose of differentiating from the prior art, clarity, and technical understanding. Also, the terms described hereinafter are defined in consideration of the functions in the present invention and may vary according to the intentions or conventions of users and operators. Therefore, these terms should be defined based on the technical content throughout this specification. On the other hand, the embodiments only belong to the exemplary matters of the structural elements proposed within the scope of the rights of the present invention and do not limit the scope of the rights of the present invention. The scope of the rights should be interpreted based on the technical idea throughout the specification of the present invention.

[0050] Throughout the specification, when a structure "comprises" another structure, unless there is a particularly contrary description, it means that other structures may also be included without excluding the remaining other structures.

[0051] Also, when a structure is "connected to", "linked to", or "combined with" another structure, this means that there is a case of "directly connected to", "directly linked to", or "directly combined with", and there may also be a case of "connected in a state where other structures are interposed therebetween", "linked in a state where other structures are interposed therebetween", or "combined in a state where other structures are interposed therebetween". On the contrary, when a structure is "directly connected to", "directly linked to", or "directly combined with" another structure, it should be understood that there are no other structures in between.

[0052] Also, when directional terms such as "front", "rear", "upper", "lower", "left", "right", "one end", "the other end", "both ends", etc. are used, they are used exemplarily in relation to the directions of the disclosed figures and thus cannot be restrictively interpreted. When terms such as "first", "second", etc. are used, they are terms for differentiating each structure and cannot be restrictively interpreted.

[0053] To more clearly illustrate the features of the embodiments of the present invention, detailed descriptions of matters well-known to those of ordinary skill in the technical field to which the following embodiments belong are omitted. Also, detailed descriptions of parts in the figures that are irrelevant to the description of the embodiments are omitted.

[0054] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0055] Figure 2 and Figure 3 are a schematic diagram and a perspective view of a chamber provided with a balance measurement device according to an embodiment of the present invention, Figure 4 and Figure 5 is a schematic diagram of a sensor setting unit in a balance measurement device according to an embodiment of the present invention, Figure 6 is a flowchart showing a process of compensating a sensor using a balance measurement device according to an embodiment of the present invention, Figure 7The figure is a flowchart showing the process of adjusting the balance of a heater using a balance measurement device according to an embodiment of the present invention.

[0056] Referring to Figures 2 to 5 , the balance measurement device 10 according to an embodiment of the present invention is an in-built type disposed inside the wafer processing chamber 1.

[0057] The structure of a conventional balance measurement device is that it is disposed inside the chamber when needed and removed again when the measurement is completed. Therefore, the setting location may be different each time, and there is a problem that precise measurement is difficult. Also, conventionally, when setting up and removing the measurement device, it has always been necessary to open and close the chamber, resulting in reduced work efficiency and problems with the durability of the chamber.

[0058] The present invention is used to solve such problems. It belongs to an in-built type in which the balance measurement device is fixed inside the chamber, and the setting location is the same, so the measurement accuracy can be improved. Also, different from the prior art, there is no need for setting up and removing, so there is no need to open and close the chamber, which can improve the work effectiveness and also improve the durability of the chamber.

[0059] Such a measurement device 10 of the present invention includes: a sensor unit 100 disposed on the bottom surface 11 of the wafer processing chamber 1; and a control unit CON that receives information from the sensor unit 100 and measures the balance of the heater 2. That is, the distance is sensed in the sensor unit 100 built inside the wafer processing chamber 1, and the relevant information is received by the control unit CON and undergoes a prescribed calculation process.

[0060] As the sensor unit 100, a sensor for measuring distance can be used. Such a distance measurement sensor itself has a well-known structure, so the detailed description and illustration related thereto are omitted. Also, the control unit CON is used for prescribed calculations, and for this purpose, a PC, tablet computer, smartphone, etc. can be used, which is also a well-known structure, so the detailed description and illustration related thereto are omitted.

[0061] On the other hand, the sensor unit 100 includes: an inner sensor unit 120 disposed on the bottom surface 11 of the wafer processing chamber 1 and provided with a plurality in the circumferential direction around the shaft 5 that supports the heater 2; and an outer sensor unit 110. The outer sensor unit 110 is disposed outside the inner sensor unit 120. That is, the inner sensor unit 120 is arranged in the circumferential direction around the shaft 5, and the outer sensor unit 110 is arranged in the circumferential direction with a radius larger than the radius of the inner sensor unit 120.

[0062] The inner sensor unit 120 can measure the distance between the bottom surface 11 and the lower side surface of the heater 2, and the outer sensor unit 110 measures the distance between the bottom surface 11 and the lower side surface of the nozzle 4. That is, the distances at various locations of the heater 2 are measured by the plurality of inner sensor units 120, so whether the heater 2 is in a balanced state can be confirmed based on the differences in the measured distances. Similarly, the distances at various locations of the nozzle 4 are measured by the plurality of outer sensor units 120, so whether the nozzle 4 is in a balanced state can be confirmed.

[0063] As described above, the distance is measured by the sensor unit 100, and the sensor unit 100 is disposed in the wafer processing chamber 1, which is a harsh environment at a high temperature, so protection is required. For this reason, the balance measurement device 10 of the present invention may include a sensor setting unit 200 disposed on the bottom surface 11 for placing the sensor unit 100.

[0064] At this time, the bottom surface 11 may include: a placement portion 111, which is recessed at a specific depth on the lower side of the bottom surface 11 for placing the sensor unit 100; and an opening portion 112, which is formed on the placement portion 111 and communicates with the inside of the wafer processing chamber 1. That is, on the lower side of the bottom surface 11, the placement portion 111 is recessed at a specific depth, and the opening portion 112 may be formed on the placement portion 111. At this time, the opening portion 112 may be formed to have a diameter smaller than the diameter of the placement portion 111. The placement portion 111 can communicate with the inside of the wafer processing chamber 1 through the opening portion 112.

[0065] The sensor setting unit 200 may include a protective cover 210, a fixing unit 220, and a sensor bracket 230. The protective cover 210 can be inserted into the placement portion 111. This protective cover 210 is made of a transparent material, and the sensor unit 100 can pass through the opening portion 112. The fixing unit 220 may be disposed on the lower side of the protective cover 210, and the sensor bracket 230 is housed inside the fixing unit 220. Therefore, the sensor unit 100 is disposed on the sensor bracket 230, and the sensor bracket 230 is placed inside the fixing unit 220, so the sensor unit 100 can be stably disposed on the bottom surface of the wafer processing chamber 1. And the sensor unit 100 can pass through the protective cover 210 to measure the distance to the heater 2 or the nozzle 4 inside the wafer processing chamber 1.

[0066] On the other hand, the above-mentioned fixing part 220 may include: a fixing part main body 2210, which is in a hollow cylindrical shape, and the above-mentioned sensor bracket 230 is inserted therein; a locking part 2220, which protrudes horizontally from the inner side surface of the above-mentioned fixing part main body 2210. The above-mentioned sensor bracket 230 may include: a sensor bracket main body 2310, on which the above-mentioned sensor part 100 is placed; a protruding part 2320, which protrudes from one side surface of the above-mentioned sensor bracket main body 2310. At this time, the above-mentioned sensor bracket main body 2310 may be inserted into the inside of the above-mentioned fixing part main body 2210, the above-mentioned protruding part 2320 is locked to the above-mentioned locking part 2220, and the above-mentioned sensor bracket 230 is placed inside the above-mentioned fixing part 220.

[0067] The above-mentioned sensor part 100 may be disposed on the upper part of the above-mentioned sensor bracket main body 2310, and the distance is measured through the above-mentioned protective cover 210.

[0068] On the other hand, a sealing ring 250 may also be provided between the above-mentioned protective cover 210 and the above-mentioned opening part 112. Since a high-temperature gas is filled inside the above-mentioned wafer processing chamber 1, this gas may leak around the above-mentioned protective cover 210 and damage the above-mentioned sensor part 100. To prevent this problem, the above-mentioned sealing ring 250 may be provided. The above-mentioned sealing ring 250 may use an O-ring (O-ring), etc., which is a well-known structure, so the detailed description and illustration are omitted.

[0069] Hereinafter, with reference to Figures 2 to 7 , a method for adjusting the balance using the balance measurement device 10 of the present invention will be described.

[0070] As described above, the balance measurement device 10 includes the above-mentioned sensor part 100 provided on the above-mentioned bottom surface 11 of the above-mentioned wafer processing chamber 1. The distance from the above-mentioned bottom surface 11 to the above-mentioned heater 2 or the above-mentioned shower head 4 is measured using the above-mentioned sensor part 100. The above-mentioned control unit CON adjusts the balance of the above-mentioned heater 2 using the measured distance.

[0071] The above-mentioned heater 2 is lifted and lowered using the above-mentioned transfer device 3. As described above, the above-mentioned transfer device 3 may include: the above-mentioned plurality of support parts 32, which support the above-mentioned shaft 5 of the above-mentioned heater 2 to lift and lower; and the above-mentioned plurality of actuators 31, which respectively lift and lower the above-mentioned support parts 32. The above-mentioned actuators 31 and the above-mentioned support parts 32 are commonly used in this technical field. In one embodiment, the above-mentioned actuator 31 may include an electric motor (not shown) and a ball screw (not shown) rotated by the above-mentioned electric motor (not shown). The above-mentioned support part 32 may be combined with the above-mentioned ball screw and lift and lower along the rotation direction of the above-mentioned ball screw using a threaded coupling part. The above-mentioned support part 32 may support the above-mentioned shaft 5 at one support point and lift and lower to lift and lower the above-mentioned shaft 5.

[0072] At this time, the above control unit CON individually controls the above actuator 31 based on the distance measured by the above sensor unit 100 to adjust the balance of the above heater 2. For example, when the above heater 2 is arranged to be inclined unidirectionally and the distance measured at one location is less than that at another location, if the above actuator 31 corresponding to the above location is driven to raise the above support portion 32, then that location rises, and thus balance can be formed.

[0073] That is, according to the present invention, the above sensor unit 100 is built into the above wafer processing chamber 1, so that even during the process, it can be confirmed at any time, and more precise processes can be performed.

[0074] As described above, in the present invention, the distance is measured by the above sensor unit 100. At this time, sometimes compensation needs to be performed according to the characteristics of the above sensor unit 100 itself. For example, the measurement accuracy of the above sensor unit 100 itself may be different, and the angle at which the above sensor unit 100 is placed on the above bottom surface 11 of the above wafer processing chamber 1 and the like change, and the measured value may change, so compensation for it is required.

[0075] Therefore, as Figure 6 shown, it is necessary to perform step S100 for the accuracy and compensation of the above sensor unit 100. The above step S100 for this first performs the eleventh step S110 of arranging the above heater 2 at a specific position.

[0076] After that, the twelfth step S120 of measuring the distance between the above bottom surface 11 and the above heater 2 by the above inner sensor unit 120 and calculating the heater measured value A' is performed. At this time, in the above twelfth step S120, the above plurality of inner sensor units 120 can also be averaged after continuously measuring for a specific time to calculate the measured value. That is, since a plurality of the above inner sensor units 120 are arranged, each of the above inner sensor units 120 can also be measured for a specific time (for example, 3 seconds), and the measured values thus measured are added up and then averaged to calculate the above heater measured value A'. On the other hand, as described above, the above heater measured value A' can be calculated by the control unit CON.

[0077] After that, the thirteenth step S130 is performed by the above control unit CON. In the above thirteenth step S130, the heater difference value AE, which is the difference between the established heater design value A and the above heater measured value A', is calculated as the distance between the above heater 2 and the above bottom surface 11.

[0078] At this time, the fourteenth step S140 is executed as follows: When the above-mentioned heater difference value AE is within a specific range (for example, 2 μm), it is determined that the accuracy of the above-mentioned sensor unit 100 is satisfied, and the sensor compensation is ended. When the above-mentioned heater difference value AE exceeds the specific range, after compensating the above-mentioned sensor unit 100, the above-mentioned twelfth step S120 is executed to confirm whether the above-mentioned sensor unit 100 needs compensation.

[0079] As described above, after confirming whether the above-mentioned sensor unit 100 is compensated, the step S200 of measuring the balance of the above-mentioned heater 2 and adjusting the balance according to the result is executed.

[0080] As Figure 7 shown, the above-mentioned step S200 first executes the twenty-first step S210 of arranging the above-mentioned heater 2 at a specific position.

[0081] After that, the twenty-second step S220 is executed as follows: The distance between the above-mentioned bottom surface 11 and the above-mentioned heater 2 is measured by the above-mentioned inner sensor unit 120, and the heater measurement value A' is calculated. The distance between the above-mentioned bottom surface 11 and the above-mentioned nozzle 4 is measured by the above-mentioned outer sensor unit 110, and the nozzle measurement value B' is calculated. At this time, the above-mentioned twenty-second step S220 can also be executed by the above-mentioned control unit CON.

[0082] After that, the twenty-third step 230 is executed as follows: The heater difference value AE, which is the difference between the established heater design value A and the above-mentioned heater measurement value A', is calculated. As the distance between the above-mentioned heater 2 and the bottom surface 11, the nozzle difference value BE, which is the difference between the established nozzle design value B and the above-mentioned nozzle measurement value B', is calculated. As the distance between the above-mentioned nozzle 4 and the bottom surface 11.

[0083] After the heater difference value AE and the nozzle difference value BE are respectively calculated through the above-mentioned twenty-third step S230, the twenty-fourth step S240 of calculating the difference value CE between the above-mentioned heater difference value AE and the above-mentioned nozzle difference value BE is executed. In other words, the degree to which the interval between the above-mentioned heater 2 and the above-mentioned nozzle 4 deviates from the design value is confirmed.

[0084] The twenty-fifth step S250 is executed as follows: When this difference value CE is within the established specific range, it is determined that the above-mentioned heater 2 is in a balanced state. When the difference value CE exceeds the specific range, the above-mentioned heater 2 is balanced, and the above-mentioned twenty-second step S220 is executed again.

[0085] On the other hand, the above-mentioned difference value CE can also be used to arrange the inner sensor unit 120 and the outer sensor unit 110 in the same quantity. After calculating the difference values at different locations of the inner sensor unit 120 and the outer sensor unit 110 respectively, it is determined whether the sum of the difference values at different locations is within a specific range. That is, after arranging three of the inner sensor unit 120 and three of the outer sensor unit 110 respectively, the difference values at different locations of each sensor unit are calculated.

[0086] At this time, in the above-mentioned twenty-fifth step S250, as described above, in order to balance the heater 2, the control unit CON individually drives the actuator 31 in the transfer device 3 of the heater 2 to lift the heater 2.

[0087] As described above, according to the present invention, there is provided a possibility of improving the durability of the chamber while improving the effectiveness of the work, without the need for a setup and removal process before and after measurement, enabling precise measurement, and without the need for an opening and closing process of the chamber.

[0088] As described above, the present invention is described with reference to the embodiments shown in the drawings. However, it should be understood that this is only exemplary, and various modifications and equivalent other embodiments can be made based on the common knowledge in the technical field to which the technology belongs. Therefore, the true technical protection scope of the present invention is based on the appended claims and should be determined based on the specific content of the above-mentioned invention.

[0089] Industrial Applicability

[0090] The present invention relates to a wafer processing chamber and can be used in the field of semiconductor-related industries.

Claims

1. A built-in balance measuring device for a wafer processing chamber, characterized in that: include: A sensor portion is disposed on the bottom surface of the wafer processing chamber; as well as The control unit receives information from the sensor unit and measures the balance of the heater.

2. The built-in balance measuring device for a wafer processing chamber according to claim 1, characterized in that: The sensor unit includes: An inner sensor unit is disposed on the bottom surface of the wafer processing chamber and is provided in a plurality of circumferential directions around the axis supporting the heater; and Outer sensor part, The outer sensor portion is arranged outside the inner sensor portion. The inner sensor portion measures the distance between the bottom surface and the lower side surface of the heater. The outer sensor portion measures the distance between the bottom surface and the lower side surface of the nozzle head.

3. The built-in balance measuring device for a wafer processing chamber according to claim 1, characterized in that: The balance measuring unit includes a sensor installation unit disposed on the bottom surface and on which the sensor unit is placed. The bottom surface includes: A placement portion, in which a sensor portion is placed in a groove with a specific depth on the lower side of the bottom surface; and The opening portion is formed at the upper portion of the placement portion and communicates with the interior of the wafer processing chamber. The sensor setting unit includes: A protective cover made of a transparent material is inserted into the placement portion; A fixing portion, disposed on the lower side of the protective cover and buckled into the placement portion; and The sensor bracket is inserted into the fixing portion and accommodates the sensor portion.

4. The built-in balance measuring device for a wafer processing chamber according to claim 3, characterized in that: The fixing part includes: The fixing part body is in the shape of a hollow cylinder, and the sensor bracket is inserted into the inside; and The locking portion protrudes horizontally from the inner side of the fixing portion body. The sensor bracket comprises: A sensor bracket body, for placing the sensor part; and The protrusion protrudes from one side of the sensor bracket body. The sensor bracket body is inserted into the interior of the fixing portion body, and the protruding portion is locked in the locking portion.

5. The built-in balance measuring device for a wafer processing chamber according to claim 3, characterized in that: It also includes a sealing ring arranged between the protective cover and the opening portion.

6. A method for adjusting the balance of a wafer processing chamber, using the balance measuring device according to any one of claims 1 to 5, characterized in that: The sensor unit disposed on the bottom surface of the wafer processing chamber measures the distance from the bottom surface to the heater or the showerhead. The control unit is used to adjust the balance of the heater.

7. The method for adjusting the balance of a wafer processing chamber according to claim 6, wherein: The heater is raised and lowered by a transfer device. The above-mentioned transfer device comprises: A plurality of support parts, supporting the shaft of the heater to be raised and lowered; and A plurality of actuators are used to raise and lower the support parts. The control unit controls the actuators individually according to the measured distance to adjust the balance of the heater.

8. The method for adjusting the balance of a wafer processing chamber according to claim 6, wherein: include: The eleventh step is to dispose the heater at a specific position to perform accuracy and compensation of the sensor part; The twelfth step is to measure the distance between the bottom surface and the heater by using the inner sensor part, and calculate the measured value of the heater; A thirteenth step of calculating a heater difference value which is a difference between a predetermined heater design value and the heater measurement value as a distance between the heater and the bottom surface; and In the fourteenth step, when the heater difference value is within a specific range, it is determined that the accuracy of the sensor unit is satisfied and the sensor compensation is terminated. When the heater difference value exceeds the specific range, the sensor unit is compensated and the twelfth step is executed.

9. The method for adjusting the balance of a wafer processing chamber according to claim 8, wherein: In the twelfth step, the plurality of inner sensor units continuously measure the values ​​for a specific period of time and then average the measured values ​​to calculate the values.

10. The method for adjusting the balance of a wafer processing chamber according to claim 6, wherein: include: Step 21, placing the heater at a specific position to measure and adjust the balance of the heater; In a twenty-second step, the distance between the bottom surface and the heater is measured by the inner sensor unit to calculate a heater measurement value, and the distance between the bottom surface and the nozzle is measured by the outer sensor unit to calculate a nozzle measurement value; In the twenty-third step, a heater difference value is calculated as a difference between a predetermined heater design value and the heater measurement value as the distance between the heater and the bottom surface, and a nozzle difference value is calculated as a difference between a predetermined nozzle design value and the nozzle measurement value as the distance between the nozzle and the bottom surface; In the twenty-fourth step, a difference value (CE) between the heater difference value and the nozzle difference value is calculated; and In step 25, when the difference value (CE) is within a predetermined specific range, it is determined that the heater is in a balanced state; when the difference value (CE) exceeds the specific range, the heater is balanced and step 22 is executed again. In the twenty-fifth step, in order to balance the heater, the control unit drives the actuators in the transfer devices of the heaters individually to move the heaters up and down.

11. The method for adjusting the balance of a wafer processing chamber according to claim 10, wherein: In the twenty-fourth step, the difference value (CE) is configured in the same number as the inner sensor unit and the outer sensor unit. After calculating the difference values ​​at different locations of the inner sensor unit and the outer sensor unit, it is determined whether a total value of the difference values ​​at different locations is within a specific range.

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