Wafer heating and cooling device of semiconductor process equipment

Abstract

The present invention relates to a wafer heating and cooling apparatus of a semiconductor process apparatus, comprising: an upper chamber formed at the upper part of the inner side of a chamber body of a load lock chamber in which a wafer waits before a process; a buffer stage which is provided on one side of an equipment front-end module (EFEM), and in which a wafer discharged from a lower chamber formed on the lower side of an upper chamber of the load lock chamber is fed and stored before being transferred to a load port of the equipment front-end module; a vortex tube which is provided on the lower side of the chamber body, supplies compressed air, discharges hot air to the long-axis end, and discharges cold air to the short-axis end; a hot air flow path which is connected between the long-axis end of the vortex tube and the upper chamber and supplies hot air to the upper chamber; and a cold air flow path which is connected between the short-axis end of the vortex tube and the buffer table and supplies cold air to the buffer table.

Description

Technical Field

[0001] The present invention relates to a wafer heating and cooling device for semiconductor process equipment, and more particularly to a wafer heating and cooling device for semiconductor process equipment that heats (preheats) and cools wafers transferred in and out via an equipment front end module (EFEM) and a load lock chamber. Background Art

[0002] Generally, semiconductor process equipment includes an equipment front end module (EFEM), a load lock chamber, a transfer chamber, and a plurality of process chambers.

[0003] The above-mentioned EFEM is a loading / unloading device that extracts the wafers from a FOUP storing a plurality of wafers, delivers them to the load lock chamber, or stores the wafers in the load lock chamber back into the FOUP, and is a device configured at the front end of the semiconductor process equipment.

[0004] The above-mentioned load lock chamber is located between the EFEM in the atmospheric pressure state and the transfer chamber in the vacuum state, and can maintain the vacuum state of the transfer chamber while quickly transferring the wafers in and out by quickly switching between the vacuum state and the atmospheric state.

[0005] On the other hand, the above-mentioned wafers perform processes under temperature conditions set in the above-mentioned process chambers. Therefore, in order to reduce the wafer heating time in the above-mentioned process chambers, the above-mentioned wafers are preheated to an appropriate temperature in the above-mentioned load lock chamber. For this purpose, the above-mentioned load lock chamber is provided with a wafer heating device. Generally, as the heating device of the above-mentioned load lock chamber, an electrically heated heater is used.

[0006] In addition, the wafers taken out after the processes are performed in the above-mentioned process chambers are in a high-temperature state. Therefore, in order to reduce the temperature of the above-mentioned wafers to the atmospheric level, a buffer stage is provided on the side of the above-mentioned EFEM as a cooling device. On the above-mentioned buffer stage, the above-mentioned wafers are cooled in a state filled with purified high-purity nitrogen (PN2).

[0007] As described above, the conventional semiconductor process equipment is composed of individual systems such as a heating device provided in the above-mentioned load lock chamber and the above-mentioned EFEM buffer stage that are independent of each other for heating (preheating) and cooling the above-mentioned wafers. In this way, the wafer heating device and the cooling device are each composed of a separate system, so a large amount of time and cost are consumed in design and production.

[0008] Moreover, the above-mentioned heater and the above-mentioned EFEM buffer table respectively require separate energy sources, resulting in a complicated device structure and inevitable power consumption and loss during operation.

[0009] Moreover, the above-mentioned EFEM buffer table is only filled with nitrogen, and there is a disadvantage that the cooling rate of the wafer is very slow.

[0010] The prior art is technical information owned by the inventor for deriving the present invention or obtained during the process of deriving the present invention, and is not necessarily publicly known art disclosed to the general public before the application of the present invention.

[0011] Prior art documents

[0012] Patent documents

[0013] (Patent Document 1) Korean Patent Publication No. 10-2008-0072275 (published on August 6, 2008) Summary of the Invention

[0014] Technical Problem

[0015] In the process of solving the above problems, an object of the present invention is to provide a wafer heating and cooling device for a semiconductor process equipment formed by one system, which is easy to design and manufacture, does not consume power during operation, and can cool the wafer faster.

[0016] The problems to be solved by the present invention are not limited to the above-mentioned problems, and those skilled in the art to which the present invention pertains can clearly understand other problems not mentioned from the following description.

[0017] Solution to the Problem

[0018] The wafer heating and cooling device for a semiconductor process equipment according to an embodiment of the present invention includes: an upper chamber formed inside the upper part of the chamber body of the load lock chamber, where the wafer waits before the process; a buffer table provided on one side of the equipment front end module (EFEM, Equipment Front End Module), and the wafer after the process discharged from the lower chamber formed under the upper chamber of the load lock chamber is put in and stored before being transferred to the load port of the equipment front end module; a vortex tube provided under the chamber body, supplied with compressed air, discharging hot air from the long axis end and cold air from the short axis end; a hot air flow path connected between the long axis end of the vortex tube and the upper chamber to supply hot air to the upper chamber; and a cold air flow path connected between the short axis end of the vortex tube and the buffer table to supply cold air to the buffer table.

[0019] Furthermore, the above-described vortex tube can be connected to a compressed gas supply source provided at a location far from the above-described load lock chamber to supply compressed gas.

[0020] Furthermore, the above-described hot air flow path may include: a lower flow path provided on the lower side of the above-described chamber body and connected to the above-described long-axis end of the above-described vortex tube; a connecting flow path formed by vertically penetrating the above-described chamber body, with the lower inlet connected to the above-described lower flow path; and an upper branch flow path provided on the upper side of the above-described chamber body, connected to the upper outlet of the above-described connecting flow path, branching to both sides, and respectively connected to the above-described upper chambers provided on the left and right sides of the above-described chamber body.

[0021] Furthermore, the above-described cold air flow path may include: a lower flow path provided on the lower side of the above-described chamber body and connected to the above-described short-axis end of the above-described vortex tube; and a connecting flow path extending from the above-described lower flow path to the outside of the above-described load lock chamber and connected to the above-described buffer table.

[0022] Furthermore, the above-described hot air flow path may be connected to a diffuser provided at the center of the upper surface of the above-described upper chamber and penetrating the above-described upper branch flow path.

[0023] Furthermore, a regulator for adjusting the flow rate of the hot air supplied to the above-described upper chamber may be provided in the above-described lower flow path of the above-described hot air flow path.

[0024] Furthermore, a filter for filtering particles of the hot air supplied to the above-described upper chamber may be provided in the above-described upper branch flow path of the above-described hot air flow path.

[0025] Furthermore, a regulator for adjusting the flow rate of the cold air supplied to the above-described buffer table may be provided in the above-described lower flow path of the above-described cold air flow path.

[0026] Furthermore, a filter for filtering particles of the cold air supplied to the above-described buffer table may be provided in the above-described connecting flow path of the above-described cold air flow path.

[0027] Furthermore, a discharge flow path may be formed in the opposite side portion of the above-described buffer table where the above-described connecting flow path is connected, and an on-off valve for opening and closing the flow path is provided in the above-described discharge flow path.

[0028] Effects of the Invention

[0029] As described above, the wafer heating and cooling device of the semiconductor process equipment according to the present invention is formed by one system, is easy to design and manufacture, does not consume power during operation, and can cool the wafer faster.

[0030] The effects of the present invention are not limited to the above-mentioned effects, and those of ordinary skill in the technical field to which the present invention pertains can clearly understand other effects not mentioned from the following description. Brief Description of the Drawings

[0031] Figure 1 Front view of the load lock chamber of the wafer heating and cooling device applicable to the semiconductor process equipment according to an embodiment of the present invention.

[0032] Figure 2 For application according to Figure 1 Top view of the load lock chamber of the wafer heating and cooling device applicable to the semiconductor process equipment according to the embodiment of the present invention shown.

[0033] Figure 3 For application according to Figure 1 Bottom view of the load lock chamber of the wafer heating and cooling device applicable to the semiconductor process equipment according to the embodiment of the present invention shown, and is a structural diagram of the wafer heating and cooling device of the semiconductor process equipment according to the embodiment of the present invention.

[0034] Figure 4 For along Figure 1 Cross-sectional view taken along line IV-IV, and is a structural diagram of the wafer heating and cooling device of the semiconductor process equipment.

[0035] (Description of reference numerals)

[0036] 10: Chamber body 11: Upper chamber

[0037] 12: Lower chamber 20: Door module

[0038] 21: Upper opening 22: Lower opening

[0039] 30: Door driving part 100: Compressed gas supply source

[0040] 200: Vortex tube 300: Hot air flow path

[0041] 310: Lower flow path 320: Connecting flow path

[0042] 330: Upper branch flow path 340: Diffuser

[0043] 400: Cold air flow path 410: Lower flow path

[0044] 420: Connecting flow path 430: Discharge flow path

[0045] F1, F2: Filters R1, R2: Regulators

[0046] V1, V3, V5: On-off valves V2, V4: Bypass valves Detailed implementation manners

[0047] In the present invention, the accompanying drawings may be represented in an exaggerated manner for the purpose of differentiating from the prior art, clarity, and technical understanding. Moreover, the terms described hereinafter are defined in consideration of the functions in the present invention and may vary depending on the intention of the user, operator, or convention. Therefore, these terms should be defined based on the technical content throughout this specification. On the other hand, the embodiments only belong to the exemplary matters of the structural elements proposed within the scope of the rights of the present invention and do not limit the scope of the rights of the present invention. The scope of the rights should be interpreted based on the technical idea throughout the specification of the present invention.

[0048] Throughout the specification, when a structure "comprises" another structure, unless there is a particularly contrary description, it means that other structures may also be included, without excluding the remaining other structures.

[0049] Moreover, when a structure is "connected to", "linked to", or "combined with" another structure, this means that there are cases of "directly connected to", "directly linked to", or "directly combined with", and there may also be cases of "connected in a state where other structures are interposed therebetween", "linked in a state where other structures are interposed therebetween", or "combined in a state where other structures are interposed therebetween". On the contrary, when a structure is "directly connected to", "directly linked to", or "directly combined with" another structure, it should be understood that there are no other structures in between.

[0050] Moreover, when directional terms such as "front", "rear", "upper", "lower", "left", "right", "one end", "the other end", "both ends", etc. are used, they are used exemplarily in relation to the direction of the disclosed figures and thus cannot be restrictively interpreted. When terms such as "first", "second", etc. are used, they are terms for differentiating each structure and cannot be restrictively interpreted.

[0051] To more clearly illustrate the features of the embodiments of the present invention, detailed descriptions of matters well-known to those of ordinary skill in the technical field to which the following embodiments belong are omitted. Moreover, detailed descriptions of parts in the figures that are irrelevant to the description of the embodiments are omitted.

[0052] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0053] Figure 1 The front view of the load lock chamber of the wafer heating and cooling device of the semiconductor process equipment applicable to the embodiments of the present invention. Figure 2 For application according to Figure 1 The top view of the load lock chamber of the wafer heating and cooling device of the semiconductor process equipment applicable to the embodiments of the present invention as shown. Figure 3 For application according to Figure 1The bottom view of the load lock chamber of the wafer heating and cooling device of the semiconductor process equipment according to the embodiment of the present invention shown is a structural diagram of the wafer heating and cooling device of the semiconductor process equipment according to the embodiment of the present invention. Figure 4 is a cross-sectional view along Figure 1 the line Ⅳ-Ⅳ, and is a structural diagram of the wafer heating and cooling device of the semiconductor process equipment.

[0054] Referring to Figures 1 to 4 , the wafer heating and cooling device of the semiconductor process equipment according to the embodiment of the present invention includes an upper chamber 11 of the load lock chamber, a vortex tube 200, a hot air flow path 300, a cold air flow path 400, and a buffer table 500.

[0055] The above-mentioned upper chamber 11 is formed in the chamber body 10 of the load lock chamber which is a structure of the above-mentioned semiconductor process equipment. A lower chamber 12 is also formed below the upper chamber 11 of the chamber body 10.

[0056] The above-mentioned load lock chamber is a device that is set between the equipment front end module (EFEM) and the transfer chamber in the semiconductor processing equipment, and can carry wafers in and out without vacuum loss of the transfer chamber and the process chamber.

[0057] The above-mentioned load lock chamber can be a double chamber in which a pair of the above-mentioned upper chambers 11 and lower chambers 12 are respectively formed on both inner sides of the chamber body 10.

[0058] The above-mentioned upper chamber 11 is a structure formed in the upper inner part of the chamber body 10 of the above-mentioned load lock chamber, where the wafer W waits before the process. That is, the above-mentioned upper chamber 11 is a chamber for loading the wafer W, and is a space where the wafer W waits to be loaded into the transfer chamber before the process and is input from the above-mentioned EFEM.

[0059] The above-mentioned lower chamber 12 is a structure formed below the above-mentioned upper chamber 11 of the above-mentioned load lock chamber. That is, the above-mentioned lower chamber 12 is a chamber for unloading the wafer W, and is a space where the wafer W waits to be unloaded into the above-mentioned EFEM after the process and is unloaded from the above-mentioned transfer chamber.

[0060] Support devices for supporting the wafer W can be provided inside the above-mentioned upper chamber 11 and the above-mentioned lower chamber 12.

[0061] Door modules 20 can be respectively installed on the left and right sides of the front and rear surfaces of the above-mentioned chamber body 10. That is, door modules 20 are respectively provided on the inlet side and the outlet side of each pair of chambers formed by the above-mentioned upper chamber 11 and the above-mentioned lower chamber 12, and a total of four of the above-mentioned door modules 20 can be provided on the front and rear surfaces of the above-mentioned chamber body 10 in two each.

[0062] The above-mentioned door module 20 may include: an opening part, corresponding one-to-one to each chamber formed in the above-mentioned chamber body 10; a door (not shown), opening and closing each opening part.

[0063] That is, the above-mentioned one door module 20 may include an upper opening part 21 corresponding to the above-mentioned upper chamber 11 and a lower opening part 22 corresponding to the above-mentioned lower chamber 12, and each door (not shown) for opening and closing each of the above-mentioned opening parts 21, 22 is provided.

[0064] And, door driving parts 30 for opening and closing the above-mentioned door can be provided on the upper and lower surfaces of the above-mentioned door module 20. Driving devices such as pneumatic cylinders and motors are built in the above-mentioned door driving parts 30, and by moving the above-mentioned door in the up and down directions, the opening part can be opened and closed.

[0065] The above-mentioned vortex tube 200 is provided on the lower side of the above-mentioned chamber body 10, compressed air is supplied, hot air is discharged from the long-axis end, and cold air is discharged from the short-axis end. That is, the above-mentioned vortex tube 200 can be provided between a hot air flow path 300 and the above-mentioned cold air flow path 400 provided on the lower side of the above-mentioned chamber body 10. Although not shown, the above-mentioned hot air flow path 300 and the above-mentioned cold air flow path 400 can be fixedly provided in a state of being suspended from the lower surface of the above-mentioned chamber body 10 by respective appliances.

[0066] The above-mentioned vortex tube 200 is a device that discharges hot air from one end (long-axis end) of the tube and cold air from the other end (short-axis end) when compressed gas is supplied by a rotating chamber provided on one side of the tube. As the compressed gas, air (Air) or nitrogen (N2) can be used.

[0067] The above-mentioned vortex tube 200 can be connected to a compressed gas supply source 100 such as a compressed gas tank filled with compressed gas to supply compressed gas. The above-mentioned compressed gas supply source 100 is a device independent of semiconductor processing equipment including a load lock chamber, and can be set at a place at a specified distance from the above-mentioned load lock chamber.

[0068] An on-off valve V1 for opening and closing the flow path can be provided in the flow path connecting the above-mentioned compressed gas supply source 100 and the above-mentioned vortex tube 200.

[0069] The compressed gas injected into the above-mentioned rotating chamber rotates at high speed (above 1 million RPM) along the long-axis portion of the tube, generating a vortex while flowing, and heat is generated at this time, and hot gas can be generated. A part of the above-mentioned hot gas is discharged to the long-axis end of the tube, and the remaining part moves to the other end (short-axis end) of the tube through the inner side of the above-mentioned vortex, and the heat is taken away by the outer vortex and becomes cold gas. This cold gas can be discharged to the short-axis end of the tube.

[0070] The above-mentioned vortex tube 200 operating in the above-mentioned manner has been widely commercialized, so the description of its detailed structure is omitted.

[0071] The above-mentioned hot gas flow path 300 is connected between the long-axis end of the above-mentioned vortex tube 200 and the above-mentioned upper chamber 11, and supplies hot gas to the above-mentioned upper chamber 11. That is, the above-mentioned hot gas flow path 300 is a flow path for supplying the hot gas discharged from the long-axis end of the above-mentioned vortex tube 200 to the inside of the above-mentioned upper chamber 11 where the wafer W waits before the process.

[0072] The above-mentioned hot gas flow path 300 can be connected between the long-axis end of the above-mentioned vortex tube 200 and a diffuser 340 provided at the center of the upper surface of the above-mentioned upper chamber 11.

[0073] The above-mentioned hot gas flow path 300 may include a lower flow path 310, a connecting flow path 320, and an upper branch flow path 330.

[0074] The above-mentioned lower flow path 310 is provided at the lower part of the above-mentioned chamber body 10 and is connected to the long-axis end of the above-mentioned vortex tube 200. That is, the above-mentioned lower flow path 310 is the part from the long-axis end of the above-mentioned vortex tube 200 to the lower-side inlet of the above-mentioned connecting flow path 320.

[0075] The above-mentioned lower flow path 310 may be provided with a regulator R1. The above-mentioned regulator R1 appropriately controls the flow rate of the hot gas supplied to the above-mentioned upper chamber 11 through the above-mentioned hot gas flow path 300, and functions to prevent the above-mentioned wafer W waiting in the above-mentioned upper chamber 11 from being damaged by physical force when too much flow rate is supplied.

[0076] A bypass valve V2 may be provided on one end side of the above-mentioned lower flow path 310. The above-mentioned bypass valve V2 prevents the hot gas discharged from the above-mentioned vortex tube 200 from flowing to the side of the above-mentioned connecting flow path 320, and makes it flow to other places or be discharged to the atmosphere.

[0077] The above-mentioned connection flow path 320 is formed by penetrating the above-mentioned chamber body 10 in the vertical direction, and the lower inlet is connected to the above-mentioned lower flow path 310. A pair of the above-mentioned upper chambers 11 and the above-mentioned lower chambers 12 are respectively formed on the left and right sides inside the above-mentioned chamber body 10. Therefore, the above-mentioned connection flow path 320 can be formed by penetrating the side portion of the above-mentioned chamber body 10 where the above-mentioned upper chamber 11 and the above-mentioned lower chamber 12 are not formed. That is, the above-mentioned connection flow path 320 does not penetrate the above-mentioned upper chamber 11 and the above-mentioned lower chamber 12.

[0078] The above-mentioned lower flow path 310 can be connected to the lower inlet of the above-mentioned connection flow path 320, and the above-mentioned upper branch flow path 330 can be connected to the upper inlet.

[0079] The above-mentioned upper branch flow path 330 can be provided at the upper part of the above-mentioned chamber body 10, connected to the upper outlet of the above-mentioned connection flow path 320, branched to both sides, and respectively connected to the above-mentioned upper chambers 11 provided on the left and right sides of the above-mentioned chamber body 10. That is, the above-mentioned upper branch flow path 330 is a part connecting the upper outlet of the above-mentioned connection flow path 320 and the diffuser 340 provided at the center of the above-mentioned upper chambers 11 on both sides. One of the above-mentioned upper chambers 11 is provided on each of the two sides of the above-mentioned chamber body 10. Therefore, the above-mentioned upper branch flow path 330 can be formed by a structure branched from the part connected to the outlet side of the above-mentioned connection flow path 320 to both sides. The two above-mentioned upper branch flow paths 330 branched to both sides can be respectively connected to the above-mentioned diffuser 340 of the above-mentioned left upper chamber 11 and the above-mentioned diffuser 340 of the above-mentioned right upper chamber 11.

[0080] The above-mentioned diffuser 340 is provided by penetrating the center of the upper surface of the above-mentioned upper chamber 11, exposed to the internal space of the above-mentioned upper chamber 11, and a plurality of diffusion holes are formed on the exposed surface, so that the hot air supplied through the above-mentioned upper branch flow path 330 can be smoothly diffused to the entire internal space of the above-mentioned upper chamber 11.

[0081] The above-mentioned upper branch flow path 330 can be provided with an opening and closing valve V3 for opening and closing the flow path.

[0082] In addition, the above-mentioned upper branch flow path 330 can be provided with a filter F1. The filter F1 filters particles included in the hot air, prevents the particles from flowing into the interior of the above-mentioned upper chamber 11, and adhering to the above-mentioned wafer W.

[0083] The above-mentioned cold air flow path 400 is connected between the short axis end of the above-mentioned vortex tube 200 and the above-mentioned buffer table 500, and supplies cold air to the above-mentioned buffer table 500. That is, the above-mentioned cold air flow path 400 is a flow path for supplying the cold air discharged from the short axis end of the above-mentioned vortex tube 200 to the interior of the above-mentioned buffer table 500 of the above-mentioned EFEM where the above-mentioned wafer W is stored after the process.

[0084] The above-mentioned cold air flow path 400 can be connected between the short-axis end of the above-mentioned vortex tube 200 and one side surface of the above-mentioned buffer table 500.

[0085] The above-mentioned cold air flow path 400 includes a lower flow path 410 and a connecting flow path 420. The above-mentioned cold air flow path 400 extends and is provided on the lower side and the outer side of the above-mentioned chamber body 10, and may include a lower flow path 410 corresponding to the above-mentioned lower flow path 310 of the above-mentioned hot air flow path 300 and a connecting flow path 420 connecting from the end of the above-mentioned lower flow path 410 to the above-mentioned buffer table 500 of the above-mentioned EFEM. That is, the above-mentioned cold air flow path 400 does not include a flow path penetrating the above-mentioned chamber body 10 corresponding to the above-mentioned connecting flow path 320.

[0086] The above-mentioned lower flow path 410 is provided on the lower side of the above-mentioned chamber body 10 and is connected to the short-axis end of the above-mentioned vortex tube 200. That is, the above-mentioned lower flow path 410 is the part up to the connecting part of the short-axis end of the above-mentioned vortex tube 200 and the above-mentioned connecting flow path 420, and can transfer the cold air discharged from the above-mentioned vortex tube 200 to the above-mentioned connecting flow path 420.

[0087] The above-mentioned lower flow path 410 may be provided with a regulator R2. The regulator R2 appropriately controls the flow rate of the cold air supplied to the above-mentioned buffer table 500 through the cold air flow path 400, and functions to prevent the above-mentioned wafer W stored in the above-mentioned buffer table 500 from being damaged by physical force when an excessive flow rate is supplied.

[0088] A bypass valve V4 may be provided on one side of the end of the above-mentioned lower flow path 410. The bypass valve V4 prevents the cold air discharged from the above-mentioned vortex tube 200 from flowing to the side of the above-mentioned connecting flow path 420, but makes it flow to other places or be discharged to the atmosphere.

[0089] The above-mentioned connecting flow path 420 is a flow path connecting from the end of the above-mentioned lower flow path 410 to the above-mentioned buffer table 500.

[0090] Of course, the above-mentioned connecting flow path 420 may also be provided with a filter F2. The filter F2 is used to filter the particles included in the cold air and prevent the particles from flowing into the interior of the above-mentioned buffer table 500.

[0091] The above-mentioned buffer table 500 is a box for storing and cooling the wafer W provided on one side of the above-mentioned EFEM. After the wafer W is discharged from the lower chamber 12 of the above-mentioned load lock chamber, it is put into the interior of the above-mentioned FOUP from the load port of the above-mentioned EFEM. The buffer table 500 can be located between the load lock chamber and the load port in the wafer movement path. Therefore, the wafer discharged from the lower chamber 12 of the load lock chamber can be put into the buffer table 500 and cooled to the same temperature as the atmospheric temperature before being transferred to the load port.

[0092] According to the present invention, by means of the above-mentioned cold air flow path 400, that is, the above-mentioned lower flow path 410 and the above-mentioned connection flow path 420 connect the short-axis end of the vortex tube 200 and the buffer table 500, so that the cold air discharged from the short-axis end of the vortex tube 200 can be supplied to the interior of the buffer table 500.

[0093] A layered structure for storing the wafers by inserting them layer by layer in the vertical direction is provided inside the buffer table 500, so that a plurality of the wafers W can be stored in a state where they can be in contact with cold air.

[0094] Moreover, a discharge flow path 430 is formed in the opposite side portion of the portion of the buffer table 500 connected to the connection flow path 420, and the discharge flow path 430 can be provided with an opening / closing valve V5 for opening and closing the flow path.

[0095] Next, the operation and effect of the wafer heating and cooling device of the semiconductor process equipment according to the embodiment of the present invention will be described.

[0096] Before the process, the wafer W can be put into the upper chamber 11 from the EFEM and wait to be transferred to the transfer chamber. After the process is performed in the process chamber, the wafer W can be transferred from the transfer chamber to the lower chamber 12, and then transferred from the lower chamber 12 to the buffer table 500 for cooling, and then transferred to the load port of the EFEM and put into the FOUP.

[0097] When the compressed gas supplied from the compressed gas supply source 100 flows into the vortex tube 200, hot gas can be discharged from the long-axis end of the vortex tube 200, and cold air can be discharged from the short-axis end.

[0098] The above-mentioned hot gas can be injected into the interior of the upper chamber 11 through the above-mentioned hot air flow path 300, that is, the above-mentioned lower flow path 310, the above-mentioned connection flow path 320 and the above-mentioned upper branch flow path 330 through the diffuser 340.

[0099] Therefore, preheating the wafer W in the upper chamber 11 before the waiting process using hot air can reduce the time required to raise the temperature of the wafer W to the process implementation temperature in the process chamber later, and thus reduce the overall cycle time.

[0100] Moreover, the cold air can be supplied to the inside of the buffer table 500 via the cold air flow path 400, that is, the lower flow path 410 and the connecting flow path 420.

[0101] Therefore, cooling the wafer W after the process stored in the buffer table 500 using cold air can reduce the thermal shock caused by the sharp temperature difference with the outside when the wafer W is carried out of the processing equipment later.

[0102] As described above, the wafer heating and cooling device of the semiconductor process equipment according to the embodiment of the present invention uses the vortex tube 200 that discharges hot air and cold air from both ends respectively, and does not require a separate heating device and cooling device.

[0103] Therefore, compared with the conventional method of separately configuring the heater using electric heating and the supply system for supplying PN2 to the buffer table 500 as individual systems, it is only necessary to configure a single gas flow path system centered on the vortex tube 200, so the structure of the heating and cooling device becomes very simple.

[0104] Therefore, the time and cost required for the design and manufacture of the wafer heating and cooling device of the semiconductor process equipment can be greatly reduced.

[0105] Moreover, the wafer heating and cooling device of the semiconductor process equipment according to the embodiment of the present invention is operated by supplying compressed gas from the compressed gas supply source 100 storing compressed gas, and the compressed gas is supplied by the tank pressure. Therefore, when the compressed gas is supplied to the vortex tube 200 and passes through the flow path, no separate energy is consumed (wherein the energy consumption when the compressed gas is stored in the tank is not considered). That is, the wafer heating and cooling device of the semiconductor process equipment according to the embodiment of the present invention does not consume electric power as the operating energy, and there is no loss of electric power either.

[0106] Moreover, in the wafer heating and cooling device of the semiconductor process equipment according to the embodiment of the present invention, the cold air discharged from the short axis end of the vortex tube 200 can be supplied to the inside of the buffer table 500 through the lower flow path 410 and the connecting flow path 420, and after heat exchange with the wafer W stored in the buffer table 500, it is discharged to the outside of the buffer table 500 through the discharge flow path 430.

[0107] Therefore, new cold air with a lower temperature can be continuously supplied to the wafer W stored in the buffer table 500, so the wafer W can be cooled faster.

[0108] As described above, the wafer heating and cooling device of the semiconductor processing equipment according to the present invention is formed by a single system, which is easy to design and manufacture, consumes no power during operation, and can cool the wafer more quickly.

[0109] As described above, the present invention is described with reference to the embodiments shown in the drawings. However, it should be understood that this is only exemplary, and various modifications and equivalent other embodiments can be made based on the common knowledge in the technical field to which the technology belongs. Therefore, the true technical protection scope of the present invention is based on the appended claims and should be determined based on the specific content of the above invention.

[0110] Industrial Applicability

[0111] The present invention relates to a wafer heating and cooling device for semiconductor processing equipment, and can be used in industrial fields where there are heating and cooling objects using hot air and cold air.

Claims

1. A wafer heating and cooling device for semiconductor process equipment, characterized in that: include: An upper chamber formed at an inner upper portion of a chamber body of the load lock chamber, in which a wafer waits before a process; A buffer stage is provided at one side of the equipment front end module, and is used to store wafers after the process of being discharged from the lower chamber formed at the lower side of the upper chamber of the load lock chamber before being transferred to the load port of the equipment front end module; A vortex tube is arranged at the lower side of the chamber body, supplied with compressed air, and discharges hot air to the end of the long axis and cold air to the end of the short axis; A hot air flow path is connected between the long axis end of the vortex tube and the upper chamber to supply hot air to the upper chamber; as well as The cold air flow path is connected between the short axis end of the vortex tube and the buffer table, and supplies cold air to the buffer table.

2. The wafer heating and cooling device for semiconductor process equipment according to claim 1, characterized in that: The vortex tube is connected to a compressed gas supply source provided at a location away from the load lock chamber, and is supplied with compressed gas.

3. The wafer heating and cooling device for semiconductor process equipment according to claim 1, characterized in that: The above-mentioned hot air flow path includes: A lower flow path, disposed at the lower side of the chamber body and connected to the long axis end of the vortex tube; A connecting flow path is formed to vertically penetrate the chamber body, and a lower inlet is connected to the lower flow path; and The upper branch flow path is arranged on the upper side of the chamber body, connected to the upper outlet of the connecting flow path, and branches to both sides, respectively connected to the upper chambers arranged on the left and right sides of the chamber body.

4. The wafer heating and cooling device for semiconductor process equipment according to claim 1, characterized in that: The above-mentioned cold air flow path includes: a lower flow path, disposed at the lower side of the chamber body and connected to the short axis end of the vortex tube; and The connecting flow path extends from the lower flow path to the outside of the load lock chamber and is connected to the buffer stage.

5. The wafer heating and cooling device for semiconductor process equipment according to claim 3, characterized in that: The hot gas flow path and the upper branch flow path are connected through a diffuser provided at the center of the upper surface of the upper chamber.

6. The wafer heating and cooling device for semiconductor process equipment according to claim 3, characterized in that: The lower flow path in the hot air flow path is provided with a regulator for regulating a flow rate of hot air supplied to the upper chamber.

7. The wafer heating and cooling device for semiconductor process equipment according to claim 3, characterized in that: The upper branch flow path in the hot air flow path is provided with a filter for filtering particles of the hot air supplied to the upper chamber.

8. The wafer heating and cooling device for semiconductor process equipment according to claim 4, characterized in that: The lower flow path in the cold air flow path is provided with a regulator for regulating the flow rate of the cold air supplied to the buffer table.

9. The wafer heating and cooling device for semiconductor process equipment according to claim 4, characterized in that: The connecting flow path in the cold air flow path is provided with a filter for filtering particles of the cold air supplied to the buffer station.

10. The wafer heating and cooling device for semiconductor process equipment according to claim 4, characterized in that: The buffer stage has a discharge flow path formed at a portion opposite to a portion connected to the connection flow path, and the discharge flow path is provided with an on-off valve for opening and closing the flow path.

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