Semiconductor film deposition equipment with double-valve body structure
By using a dual-valve body structure to control the gas circuit in the film deposition equipment, the problem of existing equipment being shut down when adding or decreasing the process module is solved, and the docking without stopping is realized and the vacuum high-temperature environment is maintained, and the production efficiency is improved.
Patent Information
- Application Number
- CN202510389098.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-28
- Publication Date
- 2025-06-20
AI Technical Summary
Existing thin film deposition equipment requires process processing such as shutdown when adding and decreasing process modules, resulting in low production efficiency.
The dual-valve body structure is used to control the air path between the transmission module and the process module, and the valve body is selectively disconnected on one side of the valve body to achieve no stop-off docking, and the valve body is closed in time to maintain the vacuum high-temperature environment in the process module.
It realizes no shutdown processing when adding or decreasing the process module, reduces gas backfilling and internal cleaning treatment, and improves production efficiency.
Smart Images
Figure CN120184057A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of thin film deposition equipment, and particularly to a semiconductor thin film deposition equipment with a double valve body structure. Background Art
[0002] In the prior art, all thin film process equipment in the semiconductor industry, such as atomic layer deposition (ALD), chemical vapor deposition (CVD), etc., are composed of modules such as a front end module (EFEM), a (pre-pumping transfer body) LL, a transfer module (TM), and a process module (PM). As the platform part for docking with the PM, the TM is designed in various shapes such as quadrilateral, pentagonal, and hexagonal. Each shaped TM docks with a different number of PMs. That is, a quadrilateral docks with 3 PMs for a full configuration, a pentagon docks with 4 PMs for a full configuration, etc. And there is a SLV (Slit valve, i.e., vacuum valve) between each module to achieve the conversion between the atmospheric and vacuum environments. Since the thin film deposition process must be realized in a very strict vacuum environment, the conversion between the atmosphere and vacuum is particularly important. The LL realizes the function of the wafer entering the vacuum environment from the atmosphere, and the TM must ensure that both the TM and the PM are in a vacuum environment to ensure the smooth progress of thin film deposition. During the process, the wafer is sent from the FOUP (wafer cassette) to the LL by a manipulator, and then from the LL to the TM by the manipulator. When the environment of the PM reaches the condition for deposition, the SLV between the TM and the PM will open, and the manipulator will send the wafer into the reaction chamber of the PM. At this time, the SLV will close to isolate the process environments of the TM and the PM and realize the deposition process.
[0003] Regarding the above problems in thin film deposition, to ensure the smooth progress of the deposition process of the PM, the TM needs to continuously maintain a vacuum environment. As the platform part for docking with the PM, when the PMs docked by the TM are not fully configured and it is necessary to add PMs to achieve a full configuration, to realize the docking of the PM, the TM needs to be in an atmospheric state, which will cause the deposition processes of other PMs to not proceed smoothly. Also, since the reaction chamber of the PM belongs to a high-temperature and high-vacuum environment, complicated and time-consuming cleaning and other operations are required before each backfill to the atmosphere, which greatly reduces the production capacity. Summary of the Invention
[0004] The purpose of the present invention is to overcome the deficiencies of the prior art and provide a semiconductor thin film deposition equipment with a double valve body structure to solve the technical problem that the existing thin film deposition equipment requires process treatments such as shutdown when adding or reducing process modules, resulting in low production efficiency.
[0005] To achieve the above purpose, the present invention adopts the following technical solutions:
[0006] An embodiment of the present invention provides a semiconductor thin film deposition device with a dual-valve body structure, which includes: a polygonal transfer module, a process module, and a valve body module; a transfer port is provided on each side of the transfer module, and the valve body module is provided at each transfer port, and a process module is connected to the outside of each valve body module; wherein, the valve body module is of a dual-valve body structure, and the dual-valve body structure is respectively used to control the gas paths of the transfer port and the process module connected thereto.
[0007] Wherein, the valve body module is a vacuum valve.
[0008] Wherein, the dual-valve body structure includes: an inner valve body and an outer valve body, the inner valve body is used to control the on / off of the gas path at the transfer port, and the outer valve body is used to control the on / off of the gas path of the process module.
[0009] Wherein, both the outer valve body and the inner valve body are vacuum valves.
[0010] Wherein, the inner valve body is embedded in the transfer port of the transfer module.
[0011] Wherein, the outer valve body is arranged between the transfer module and the process module.
[0012] Wherein, a high-temperature heating module is further provided on the valve body module.
[0013] Wherein, the semiconductor thin film deposition device with the dual-valve body structure further includes a pre-pumping transfer body connected to one side of the transfer module.
[0014] Wherein, the semiconductor thin film deposition device with the dual-valve body structure further includes a front-end module connected to the front end of the pre-pumping transfer body.
[0015] Wherein, multiple process modules connected to the transfer module can achieve non-stop addition, subtraction, and docking through the valve body module.
[0016] The semiconductor thin film deposition device with the dual-valve body structure of the present invention uses the dual-valve body structure to control the gas path between the transfer module and the process module. When it is necessary to add or subtract the process module docked with the transfer module, one side of the valve body can be selectively disconnected, so as to achieve non-stop processing. At the same time, closing the valve body in a timely manner can maintain the vacuum high-temperature environment in the process module, reduce gas backfill and internal cleaning treatment, and improve production efficiency.
[0017] The above description is only an overview of the technical solution of the present invention. In order to be able to understand the technical means of the present invention more clearly, it can be implemented according to the content of the specification. And in order to make the above and other purposes, features, and advantages of the present invention more obvious and understandable, the following preferred embodiments are specifically described in detail as follows. Brief Description of the Drawings
[0018] Figure 1 It is a schematic diagram of a semiconductor thin film deposition device with a dual valve body structure according to an embodiment of the present invention.
[0019] Figure 2 It is a schematic diagram of the process of adding process modules for a semiconductor thin film deposition device with a dual valve body structure according to an embodiment of the present invention.
[0020] Figure 3 It is a schematic diagram of the process of reducing process modules for a semiconductor thin film deposition device with a dual valve body structure according to an embodiment of the present invention.
[0021] Explanation of reference numerals:
[0022] Semiconductor thin film deposition device 100 with a dual valve body structure, transfer module 13, process module 14, valve body module 15, inner valve body 151, outer valve body 152, transfer unit 16, pre-pumping transfer body 12, front-end module 11, new process module 141, old process module 142, old process module 143. Detailed implementation manners
[0023] In order to make the objectives, technical solutions and advantages of the present invention clearer and more understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific implementation manners.
[0024] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present invention.
[0025] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention.
[0026] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, "a plurality of" means two or more unless otherwise specifically defined.
[0027] In the present invention, unless otherwise clearly specified and defined, terms such as "mounted", "connected", "coupled", "fixed", etc. shall be construed in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral molding; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the communication inside two elements or the interaction relationship between two elements. For those skilled in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0028] In the present invention, unless otherwise clearly specified and defined, the first feature being "on" or "under" the second feature may include the direct contact between the first and second features, or may include the situation where the first and second features are not in direct contact but in contact through additional features therebetween. Moreover, the first feature being "above", "over" and "on top of" the second feature includes that the first feature is directly above and obliquely above the second feature, or merely means that the horizontal height of the first feature is higher than that of the second feature. The first feature being "under", "beneath" and "underneath" the second feature includes that the first feature is directly below and obliquely below the second feature, or merely means that the horizontal height of the first feature is lower than that of the second feature.
[0029] In the description of this specification, the description with reference to terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples", etc. means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic descriptions of the above terms should not be understood as necessarily referring to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples.
[0030] In the prior art, all thin-film process equipment in the semiconductor industry, such as atomic layer deposition (ALD), chemical vapor deposition (CVD), etc., consists of modules such as a front-end module (EFEM), a (pre-pumping transfer body) LL, a transfer module (TM), and a process module (PM). As the platform part for docking with the PM, the TM is designed in various shapes such as quadrilateral, pentagonal, and hexagonal. Each shaped TM docks with a different number of PMs. That is, a quadrilateral docking 3 PMs is a full configuration, a pentagonal docking 4 PMs is a full configuration, etc. And there is a SLV (Slit valve, i.e., a vacuum valve) between each module to achieve the conversion between the atmospheric and vacuum environments. Since the thin-film deposition process must be carried out in a very strict vacuum environment, the conversion between the atmosphere and vacuum is particularly important. The LL is to achieve the function of the wafer entering the vacuum environment from the atmosphere, and the TM must ensure that both the TM and the PM are in a vacuum environment to ensure the smooth progress of thin-film deposition. During the process, the wafer is sent from the FOUP (wafer cassette) to the LL by a robot arm, and then from the LL to the TM by the robot arm. When the environment of the PM reaches the condition for deposition, the SLV between the TM and the PM will open, and the robot arm will send the wafer into the reaction chamber of the PM. At this time, the SLV will close to isolate the process environments of the TM and the PM and achieve the deposition process.
[0031] Regarding the above problem of thin-film deposition, to ensure the smooth progress of the deposition process of the PM, the TM needs to continuously maintain a vacuum environment. As the platform part for docking with the PM, when the PMs docked by the TM are not fully configured and additional PMs need to be added to achieve full configuration, to realize the docking of the PM, the TM needs to be in an atmospheric state, which will cause the deposition processes of other PMs to not proceed smoothly. Also, since the reaction chamber of the PM belongs to a high-temperature and high-vacuum environment, time-consuming and cumbersome cleaning and other work are required before each backfill to the atmosphere, greatly reducing the production capacity. To solve the above problems, this embodiment discloses a semiconductor thin-film deposition device 100 with a double-valve body structure.
[0032] Please refer to Figures 1 to 3 , a semiconductor thin-film deposition device 100 with a double-valve body structure disclosed in this embodiment includes: a polygonal transfer module 13, a process module 14, and a valve body module 15; a transfer port is provided on each side of the transfer module 13, and the valve body module 15 is provided at each transfer port, and a process module 14 is connected outside each valve body module 15; wherein, the valve body module 15 has a double-valve body structure, and the double-valve body structure is respectively used to control the gas paths of the transfer module 13 and the process module 14 connected thereto.
[0033] The semiconductor thin film deposition equipment with a double-valve body structure in this embodiment controls the on-off of the gas path between the transfer module 13 and the process module 14 through the double-valve body structure, so as to maintain a sealed vacuum high-temperature state respectively during the docking process of increasing or decreasing between the transfer module 13 and the process module 14, thereby reducing the complex processing steps such as shutdown, chamber backfilling, and cleaning caused by increasing or decreasing the process module, and finally improving the efficiency and quality of the thin film deposition process.
[0034] In this embodiment, the transfer module 13 has a pentagonal distribution structure, and its full configuration state is a distribution mode in which four of the process modules 14 are respectively connected to four of its sides. One of the sides is a reserved end for externally transferring wafers to the transfer module 13. In the working state, the inside of the cavity of the transfer module 13 is a vacuum environment.
[0035] Among them, the valve body module 15 is a vacuum valve. That is, this vacuum valve has a double-control structure, or it can also be a double-control structure composed of two independent vacuum valves.
[0036] Please refer to again Figure 1 , the double-valve body structure includes: an inner valve body 151 and an outer valve body 152. The inner valve body 151 is used to control the on-off of the gas path at the transfer port, and the outer valve body 152 is used to control the on-off of the gas path of the process module 14. A sealing door panel is provided at the transfer port, and the inner valve body 151 is arranged on this sealing door panel.
[0037] Similarly, in this embodiment, both the outer valve body 152 and the inner valve body 151 are vacuum valves.
[0038] Specifically, the inner valve body 151 is embedded in the transfer port of the transfer module 13. The outer valve body 152 is arranged between the transfer module 13 and the process module 14.
[0039] In order to achieve a high-temperature environment in the process chamber of the process module 14, a high-temperature heating module (not shown in the figure) is also provided on the valve body module 15. The high-temperature heating module includes heating units such as a heating plate and heating wires.
[0040] Only the structure between one group of the transfer module 13 and the process module 14 is described above. The connection structures of the process modules 14 connected to other sides of the transfer module 13 are the same as the above structure.
[0041] Please refer to again Figures 1 to 3 , the semiconductor thin film deposition equipment 100 with a double-valve body structure further includes a pre-pumping transfer body 12 connected to one side of the transfer module 13.
[0042] Among them, the semiconductor thin film deposition equipment 100 with a double-valve body structure further includes a front-end module 11 connected to the front end of the pre-pumping transfer body 12.
[0043] A transfer unit 16 is further provided in the cavity of the transfer module 13, and the transfer unit 16 can adopt a high-precision handling unit such as a manipulator.
[0044] A plurality of the process modules 14 connected to the transfer module 13 can achieve docking addition and subtraction without stopping the machine through the valve body module 15.
[0045] As Figure 2 shown, when the transfer module 13 of the semiconductor thin film deposition equipment 100 with a double valve body structure is in a non-full configuration state, if it is necessary to add a process module on the controlled side, at this time, the new process module 141 can be docked while the original front-end module 11, pre-pumping vacuum transfer body 12, transfer module 13, and process module 14 remain in a non-stop state. First, close the outer valve body on the newly docked process module 141, keep the vacuum valve embedded in the docking side of the transfer module 13 connected to it closed, and after aligning and fixing the two, then open the inner valve body 151 and the outer valve body 152, and the addition of the new process module can be achieved simply, reliably and conveniently.
[0046] As Figure 3 shown, it is a schematic diagram of the process of reducing the process module of the semiconductor thin film deposition equipment 100 with a double valve body structure in this embodiment: Similarly, when it is necessary to remove the old process modules 142 and 143 from the transfer module 13, first close the inner valve body 151 and the outer valve body 152 connected to them respectively, and then complete the disassembly. During this process, the other front-end module 11, pre-pumping vacuum transfer body 12, transfer module 13, and process module 14 remain in a non-stop state.
[0047] EFEM is a docking module for wafers to enter semiconductor equipment, mainly responsible for automatically supplying and unloading wafers in a high-clean environment. Its core functions include:
[0048] Wafer loading and identification: Receive a wafer cassette (such as a FOUP) through a wafer loading system (Loadport), and automatically complete the opening of the wafer cassette, wafer positioning and ID verification.
[0049] Clean transfer: Use a wafer transfer robot (Robot) to complete the high-precision transfer of wafers in the microenvironment inside the EFEM to avoid contamination.
[0050] Pre-alignment: Correct the wafer position and notch direction through a wafer aligner (Aligner) to ensure the accuracy of subsequent processes.
[0051] Function of the pre-pumping vacuum transfer body (LL, Load lock): As a transfer chamber between the atmosphere and the vacuum environment, the LL is responsible for isolating the outside atmosphere from the vacuum environment of the process module to prevent contamination. Specifically, it includes:
[0052] Pressure switching: Before the wafer enters the process module, LL evacuates the chamber to a vacuum state; when removing the wafer, nitrogen is filled to restore the atmospheric pressure.
[0053] Transition protection: Through a dual-valve design, ensure that the cleanliness of the wafer is not affected by the external environment during transmission.
[0054] Function of the Transfer Module (TM): TM is the core channel for wafer transfer inside the equipment, mainly responsible for transferring wafers between the EFEM and the process module:
[0055] Vacuum transfer: In a vacuum environment, transfer the wafer from LL to the reaction chamber of the Process Module (PM) through a Vacuum Robot.
[0056] Multi-chamber coordination: Support parallel operation of multiple process chambers, and optimize the wafer transfer path to improve efficiency.
[0057] Function of the Process Module (PM): PM is the core module that actually executes wafer manufacturing processes (such as etching, deposition), and its functions include:
[0058] Process execution: Complete specific process steps through a reaction chamber system (such as an etching chamber, CVD chamber), such as plasma etching or thin film deposition.
[0059] Environmental control: Integrate radio frequency systems, vacuum systems, gas path systems, etc., to maintain the high vacuum, specific gas environment, and temperature control required for the process.
[0060] Process monitoring: Real-time monitor the process progress through an endpoint detection system (such as an optical sensor) to ensure parameter accuracy.
[0061] The semiconductor thin film deposition equipment with a dual-valve body structure of the present invention controls the gas path between the transfer module and the process module by adopting a dual-valve body structure. When it is necessary to increase or decrease the process module docked with the transfer module, one side of the valve body can be selectively disconnected, so as to achieve non-stop processing. At the same time, closing the valve body in a timely manner can maintain the vacuum and high-temperature environment in the process module, reduce gas backfill and internal cleaning treatment, and improve production efficiency.
[0062] The above only further illustrates the technical content of the present invention with examples to make it easier for readers to understand, but does not mean that the implementation mode of the present invention is limited to this. Any technical extension or re-creation based on the present invention is protected by the present invention. The protection scope of the present invention is subject to the claims.
Claims
1. A semiconductor thin film deposition device with a double valve structure, characterized in that: include: A polygonal transmission module, a process module and a valve body module; a transmission port is provided on each side of the transmission module, each transmission port is provided with the valve body module, and each valve body module is also connected to a process module; wherein the valve body module is a double valve body structure, and the double valve body structure is respectively used to control the gas circuits of the transmission module and the process module connected thereto.
2. The semiconductor thin film deposition device with a double valve structure according to claim 1, characterized in that: The valve body module is a vacuum valve.
3. The semiconductor thin film deposition device with a double valve structure according to claim 1, characterized in that: The double valve body structure includes: an inner valve body and an outer valve body, the inner valve body is used to control the on-off of the gas path at the transmission port, and the outer valve body is used to control the on-off of the gas path of the process module.
4. The semiconductor thin film deposition device with a double valve structure according to claim 3, characterized in that: The outer valve body and the inner valve body are both vacuum valves.
5. The semiconductor thin film deposition device with a double valve structure according to claim 4, characterized in that: The inner valve body is embedded in the transmission port of the transmission module.
6. The semiconductor thin film deposition device with a double valve structure according to claim 5, characterized in that: The outer valve body is arranged between the transmission module and the process module.
7. The semiconductor thin film deposition device with a double valve structure according to any one of claims 1 to 6, characterized in that: The valve body module is also provided with a high temperature heating module.
8. The semiconductor thin film deposition device with a double valve structure according to claim 7, characterized in that: The semiconductor thin film deposition equipment with a double valve body structure further includes a pre-vacuum transmission body connected to one side of the transmission module.
9. The semiconductor thin film deposition device with a double valve structure according to claim 8, characterized in that: The semiconductor thin film deposition equipment with a double valve body structure further includes a front-end module connected to the pre-vacuum transmission body.
10. The semiconductor thin film deposition device with a double valve structure according to claim 9, characterized in that: The plurality of process modules connected to the transmission module can be increased or decreased without stopping the machine through the valve body module.