Wafer Pretreatment Apparatus and Wafer Processing Method

Abstract

The present invention belongs to the technical field of semiconductor manufacturing, and discloses a wafer pretreatment device and a wafer processing method. The wafer pretreatment device includes a pretreatment chamber, a wafer fixing member, a lower spraying assembly, and an upper spraying assembly. The pretreatment chamber can accommodate a wafer; the wafer fixing member is configured to drive the wafer to flip or rotate horizontally; the lower spraying assembly is configured to spray a pretreatment liquid onto the plating surface to perform a first pretreatment on the plating surface; the upper spraying assembly sprays a pretreatment liquid onto the plating surface to perform a second pretreatment on the plating surface. Therefore, in the first pretreatment stage of the wafer, the plating surface faces downward, so that the pretreatment liquid can wash the plating surface, and the residual residues can also be gradually peeled off or spalled off under the action of self-weight and rotation and be thrown out, thereby effectively improving the cleaning effect. After the cleaning is completed, pre-wetting is performed to complete the first pretreatment, and then the second pretreatment is used to pre-clean and pre-wet the wafer, so as to effectively improve the success rate and effect of the subsequent electroplating process.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and particularly to a wafer electroplating pretreatment device and a wafer processing method. Background Art

[0002] In the process of integrated circuit manufacturing, electroplating is a key application for depositing metal into the vias and trenches of a wafer during metal damascene processing, and is also applied to filling through-silicon vias (TSVs) and bumping, etc. Through-silicon vias (TSVs) and bumping are core interconnect elements used in 2.5D and 3D integrated circuits and advanced packaging.

[0003] In order to ensure the realization of the electroplating process, before the electroplating process, pretreatment of the wafer is a core process step. The pretreatment generally includes pre-cleaning and pre-wetting. Pre-cleaning is a process of cleaning impurities in one or more recessed features formed on the surface of the wafer to be electroplated, and pre-wetting is to infiltrate a certain amount of pre-wetting liquid into one or more recessed features formed on the surface of the wafer to be electroplated, so that during the subsequent electroplating process, the electroplating solution can better infiltrate one or more recessed features. Pretreatment is a core process step for obtaining pore-free and defect-free filling in electroplating and an essential process step to ensure the electroplating effect.

[0004] There are also prior art structural solutions for pretreatment. Generally, in these solutions, mainly pre-cleaning is carried out. The wafer cleaning device includes a cleaning chamber, and a rotating disk is arranged in the cleaning chamber. The rotating disk is used to fix the wafer, and a nozzle is arranged in the cleaning chamber. The nozzle can spray the cleaning medium onto the upper surface of the wafer to clean the surface of the wafer.

[0005] During the above cleaning process, the residual substances on the upper surface of the wafer mainly need to be removed by relying on the impact force between the medium and the wafer and the centrifugal force generated when the wafer rotates. The impact force is generated by the medium impacting the wafer directly, and the centrifugal force is generated along the circumferential direction of the wafer. Both forces are difficult to achieve a good cleaning effect on the residual substances in the recessed features on the surface of the wafer, and there will still be some impurities remaining in the recessed features on the upper surface of the wafer, resulting in a poor cleaning effect and making it difficult to ensure the success rate and effect of the subsequent electroplating process. There are also some solutions that increase the spray flow rate. In the development trend of smaller and smaller feature sizes, especially for the recessed features formed by photoresist, this solution is likely to cause damage to the photoresist and affect the yield.

[0006] Therefore, for the pre-cleaning and pre-wetting involved in pretreatment, new technical solutions are needed to ensure the effects of pre-cleaning and pre-wetting and improve the success rate and effect of the subsequent electroplating process. Summary of the Invention

[0007] The object of the present invention is to provide a wafer pretreatment device and a wafer processing method, which solve the problem that in the prior art, when the wafer is pre-cleaned, the cleaning effect of the residual substances when the cleaning medium impacts the surface depression features on the plating surface of the wafer head-on is poor, affecting the success rate and effect of the subsequent electroplating process.

[0008] To achieve this object, the present invention adopts the following technical solutions:

[0009] In a first aspect, the present invention provides a wafer pretreatment device, which includes:

[0010] A pretreatment cavity, which is configured to be able to accommodate a wafer in a horizontal state in the radial direction and be able to accommodate all or part of the wafer in a vertical state in the axial direction;

[0011] A wafer fixing member, which is arranged in the pretreatment cavity and is configured to receive and fix the wafer, and drive the wafer to flip or rotate horizontally in the pretreatment cavity under the action of an external force;

[0012] A lower spraying assembly, which is arranged on the side wall of the pretreatment cavity and below the wafer, and the spraying direction of the lower spraying assembly faces the plating surface of the wafer. It is configured to spray a pretreatment liquid on the plating surface according to the received instruction for the first pretreatment of the plating surface when the wafer fixing member makes the plating surface of the wafer face the lower spraying assembly horizontally downward and drives the wafer to rotate, so as to perform the first pretreatment on the plating surface;

[0013] An upper spraying assembly, which is arranged above the pretreatment cavity and the spraying direction faces the plating surface of the wafer. It is configured to spray a pretreatment liquid on the plating surface according to the received instruction for the second pretreatment of the plating surface when the wafer fixing member makes the plating surface of the wafer face the upper spraying assembly horizontally upward and drives the wafer to rotate, so as to perform the second pretreatment on the plating surface;

[0014] A flipping assembly, which is arranged outside the pretreatment cavity and connected to the wafer fixing member, and is configured to drive the wafer fixing member and the wafer fixed by it to flip when receiving a flipping instruction, so that the plating surface of the wafer is flipped to be horizontally upward or horizontally downward after flipping.

[0015] Optionally, the wafer fixing member is arranged at the internal opening of the pretreatment cavity.

[0016] Optionally, the wafer fixing member is arranged inside the pretreatment cavity, and the upper surface of the wafer fixed by the wafer fixing member has a first preset distance from the opening, and the lower surface of the wafer fixed by the wafer fixing member has a second preset distance from the bottom of the pretreatment cavity;

[0017] Wherein, the first preset distance and the second preset distance satisfy the following condition: when the opening of the pretreatment cavity is in a sealed or unsealed state, the wafers fixed by the wafer fixing member can be turned over without obstruction.

[0018] Optionally, the wafer pretreatment device further includes:

[0019] A rotating assembly, disposed on the upper part of the pretreatment cavity, configured to be in driving connection with the wafer fixing member when the wafer fixing member is moved upward from below to a position matching the rotating assembly, and to drive the wafer fixing member and the wafer fixed thereto to rotate when receiving a rotation instruction.

[0020] Optionally, the wafer pretreatment device further includes:

[0021] A rotating assembly, disposed on the upper part of the pretreatment cavity, configured to move downward to be in driving connection with the wafer fixing member after the opening of the pretreatment cavity is sealed, and to drive the wafer fixing member and the wafer fixed thereto to rotate when receiving a rotation instruction.

[0022] Optionally, the rotating assembly includes a rotation driving member and a driving gear, and the driving gear is disposed at the output end of the rotation driving member;

[0023] The wafer pretreatment device further includes:

[0024] An up-and-down driving member, connected to the rotation driving member, configured to drive the rotation driving member to move up and down, and synchronously drive the driving gear to move up and down through the up-and-down movement of the rotation driving member, so that the driving gear is in driving connection with the wafer fixing member.

[0025] Optionally, the side surface of the wafer fixing member has a clamping ring groove; the turning-over assembly includes:

[0026] A turning-over part, partially clamped in the clamping ring groove and slidably connected to the clamping ring groove;

[0027] A turning-over driving member, disposed on the pretreatment cavity and connected to the turning-over part to drive the turning-over part to turn over.

[0028] Optionally, the turning-over part has a convex part and a fixing block connected to the convex part, and a concave area is formed on both sides at the connection between the convex part and the fixing block, so that the cross section of the convex part is trapezoidal and the cross section of the fixing block is square;

[0029] Wherein, the shape of the clamping ring groove matches the shape of the convex part, so that the convex part can form a clamping state with the clamping ring groove, and in the clamping state, the wafer fixing member can rotate around the convex part through the clamping ring groove.

[0030] Optionally, the wafer pre-processing device further includes:

[0031] Base plate;

[0032] A lifting component is arranged on the bottom plate, and the pretreatment chamber is arranged on the lifting component. The lifting component is configured to drive the pretreatment chamber to approach the rotating component, so that when the wafer fixture is moved from bottom to top to a position matching the rotating component, it is transmission-connected with the wafer fixture; or the lifting component is configured to drive the pretreatment chamber away from the rotating component to a target distance, and the target distance satisfies that the flipping component can drive the wafer fixture and the wafer fixed thereto to flip over with the rotating component and the upper spray component without obstacles, so that the plating surface of the wafer is turned horizontally upward or horizontally downward.

[0033] Optionally, the rotating assembly comprises:

[0034] Rotating drive member;

[0035] A driving gear is arranged at the output end of the rotating driving member.

[0036] Optionally, the wafer fixture comprises:

[0037] A fixing ring, one side of which is provided with a snap ring groove, the snap ring groove being configured to be slidably fixedly connected to the flip assembly, and the other side of which is provided with a wafer fixing groove, the wafer fixing groove being configured to fix the wafer;

[0038] The driven gear is arranged on the outer side of the fixing ring and is configured to be meshed with the driving gear, so that the driven gear is driven to rotate by the driving gear.

[0039] Optionally, the upper spray assembly includes:

[0040] A sealing cover is disposed at the upper portion of the opening of the pretreatment chamber and is configured to be butted and sealed with the opening of the pretreatment chamber when the plated surface of the wafer faces upward or downward, so that the plated surface of the wafer is subjected to the first pretreatment or the second pretreatment;

[0041] The upper shower head is arranged below the sealing cover and its spraying direction faces the wafer.

[0042] The present invention also provides a wafer pretreatment method, comprising:

[0043] Control the pretreatment chamber to descend, and flip the wafer without obstacles so that the plated surface is horizontal and downward;

[0044] Control the pre-treatment chamber to rise and seal, and correspondingly make the wafer rotate;

[0045] The lower spray assembly performs a first pretreatment on the plating surface of the wafer;

[0046] Control the pretreatment chamber to descend, and flip the wafer without obstruction so that its plating surface faces upward horizontally;

[0047] Control the pretreatment chamber to ascend for sealing, and correspondingly rotate the wafer;

[0048] The upper spray assembly performs a second pretreatment on the plating surface of the wafer.

[0049] The present invention also provides a wafer pretreatment method, including:

[0050] Control the pretreatment chamber to descend, and flip the wafer without obstruction so that its plating surface faces upward horizontally;

[0051] Control the pretreatment chamber to ascend for sealing, and correspondingly rotate the wafer;

[0052] The upper spray assembly performs a second pretreatment on the plating surface of the wafer;

[0053] Control the pretreatment chamber to descend, and flip the wafer without obstruction so that its plating surface faces downward horizontally;

[0054] Control the pretreatment chamber to ascend for sealing, and correspondingly rotate the wafer;

[0055] The lower spray assembly performs a first pretreatment on the plating surface of the wafer;

[0056] Control the pretreatment chamber to descend, and flip the wafer without obstruction so that its plating surface faces upward horizontally;

[0057] Control the pretreatment chamber to ascend for sealing, and correspondingly rotate the wafer;

[0058] The upper spray assembly performs a second pretreatment on the plating surface of the wafer.

[0059] The present invention also provides a wafer pretreatment method, including:

[0060] Flip the wafer without obstruction so that its plating surface faces downward horizontally;

[0061] Control the pretreatment chamber to ascend for sealing, and correspondingly rotate the wafer;

[0062] The lower spray assembly performs a first pretreatment on the plating surface of the wafer;

[0063] Flip the wafer without obstruction so that its plating surface faces upward horizontally, and correspondingly rotate the wafer;

[0064] The upper spray assembly performs a second pretreatment on the plating surface of the wafer.

[0065] The present invention also provides a method for preprocessing a wafer, including:

[0066] Flip the wafer without obstacles so that its plating surface faces upward horizontally;

[0067] Control the preprocessing chamber to rise for sealing, and correspondingly make the wafer in a rotating state;

[0068] Perform a second preprocessing on the plating surface of the wafer by the upper spraying component;

[0069] Flip the wafer without obstacles so that its plating surface faces downward horizontally, and correspondingly make the wafer in a rotating state;

[0070] Perform a first preprocessing on the plating surface of the wafer by the lower spraying component;

[0071] Flip the wafer without obstacles so that its plating surface faces upward horizontally, and correspondingly make the wafer in a rotating state;

[0072] Perform a second preprocessing on the plating surface of the wafer by the upper spraying component.

[0073] The present invention also provides a method for preprocessing a wafer, including:

[0074] Perform preprocessing on the plating surface of the wafer more than three times, and the preprocessing is the first preprocessing or the second preprocessing;

[0075] Set the plating surface of the wafer that meets the plating process upward, and wait to be taken out for the electroplating process;

[0076] Wherein, among the at least more than three preprocessings, at least one first preprocessing and one second preprocessing are included.

[0077] Optionally, according to the above-mentioned wafer preprocessing method, both the first preprocessing and the second preprocessing include pre-cleaning and pre-wetting.

[0078] Advantages of the present invention:

[0079] In a first aspect, a wafer fixing member is provided to hold and fix the wafer. After the wafer is fixed, the wafer fixing member drives the wafer to flip, so that the plating surface of the wafer is horizontally downward and faces the lower spraying assembly. The pretreatment cavity is closed, and after the pretreatment cavity is evacuated, the wafer fixing member can continuously drive the wafer to rotate at a certain speed. The lower spraying assembly is started and operates with specified parameters to spray the pretreatment liquid onto the plating surface to perform the first pretreatment on the wafer. After the first pretreatment lasts for a period of time, the operation of the lower spraying assembly is stopped. The wafer fixing member flips so that the plating surface is horizontally upward and faces the upper spraying assembly, and then the pretreatment cavity is closed again. The wafer fixing member can continuously drive the wafer to rotate at a certain speed. After receiving the instruction for the second pretreatment, the upper spraying assembly is started and operates with specified parameters to spray the pretreatment liquid onto the plating surface to perform the second pretreatment on the wafer. After the second pretreatment lasts for a period of time, the entire pretreatment of the wafer can be completed, and then the wafer is transferred to the next process for processing by equipment such as a manipulator.

[0080] Therefore, in the first pretreatment stage of the wafer, the plating surface faces downward, so that when the pretreatment liquid contacts the plating surface, it can wash the residual substances in the concave features of the plating surface, and the residual substances can also gradually separate from the concave features of the plating surface under the action of their own weight and be thrown out by the rotating wafer, thereby effectively improving the cleaning effect on the wafer. At the same time, the wafer can be pre-wetted during cleaning to complete the first pretreatment. The first pretreatment can strengthen the cleaning effect on the plating surface of the wafer, thereby improving the subsequent electroplating success rate and effect; then, the second pretreatment is used to pre-clean and pre-wet the wafer, so that the concave surface of the plating surface has a certain amount of pretreatment liquid, strengthening the pre-wetting effect, so as to effectively improve the success rate and effect of the subsequent electroplating process.

[0081] The above first pretreatment strengthens the cleaning effect on the plating surface of the wafer and also has a pre-wetting effect; the second pretreatment strengthens the pre-wetting effect on the plating surface of the wafer and also has a cleaning effect. Through the two pretreatments, the cleaning effect and the pre-wetting effect can be effectively improved, so that the plating surface of the wafer is more suitable for the implementation of the electroplating process, and the success rate and effect of the subsequent electroplating process are improved.

[0082] In a second aspect, through this pretreatment method, the first pretreatment can be carried out when the plating surface is horizontal and downward, and the second pretreatment can be carried out when the plating surface is horizontal and upward. Both the first pretreatment and the second pretreatment include pre-cleaning and pre-wetting. Then, during the first pretreatment, the residual residues in the concave features of the plating surface are not only flushed by the pretreatment liquid but also can fall off under the action of their own weight, thereby improving the cleaning effect. At the same time, pre-wetting can retain part of the pretreatment liquid in the concave features of the plating surface. When the second pretreatment is carried out, the plating surface is pre-cleaned and pre-wetted again, thereby further improving the cleaning effect and wetting effect, reducing the possibility of residual residues remaining in the concave features of the plating surface, and effectively improving the success rate and effect of electroplating. Description of the Drawings

[0083] Figure 1 is a perspective view of the lower spray assembly of the wafer pretreatment device in the embodiment of the present invention disposed on the bottom wall of the pretreatment chamber;

[0084] Figure 2 is a perspective view of the lower spray assembly of the wafer pretreatment device in the embodiment of the present invention disposed on the side wall of the pretreatment chamber;

[0085] Figure 3 is a schematic structural view of the wafer fixing member and the flipping assembly of the wafer pretreatment device in the embodiment of the present invention;

[0086] Figure 4 is a schematic structural view of the flipping assembly of the wafer pretreatment device in the embodiment of the present invention;

[0087] Figure 5 is a schematic structural view of the pretreatment chamber and the upper spray assembly of the wafer pretreatment device in the embodiment of the present invention;

[0088] Figure 6 is a schematic structural view of the wafer pretreatment device in another embodiment of the present invention;

[0089] Figure 7 is a schematic structural view of the wafer pretreatment device in another embodiment of the present invention from another perspective;

[0090] Figure 8 is a schematic structural view of the wafer pretreatment device in another embodiment of the present invention from yet another perspective;

[0091] Figure 9 is a schematic flow chart of a wafer pretreatment method in the embodiment of the present invention;

[0092] Figure 10 is a schematic flow chart of another wafer pretreatment method in the embodiment of the present invention.

[0093] In the figure:

[0094] 1. Pretreatment chamber; 2. Wafer fixing member; 21. Snap ring groove; 22. Fixed ring; 23. Driven gear; 24. Wafer fixing groove; 3. Lower spraying assembly; 4. Upper spraying assembly; 41. Sealing cover; 42. Upper spray head; 5. Flipping assembly; 51. Flipping part; 511. Protruding part; 512. Fixed block; 52. Flipping driving member; 53. Driving shaft; 6. Rotating assembly; 61. Rotating driving member; 62. Driving gear; 63. Rotating link; 7. Lifting assembly; 71. Column; 72. Connecting block; 8. Bottom plate; 9. Up and down driving member. Detailed implementation manners

[0095] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It can be understood that the specific embodiments described herein are only used to explain the present invention, rather than limiting the present invention. In addition, it should be noted that, for the sake of description, only parts related to the present invention are shown in the drawings, rather than all structures.

[0096] In the description of the present invention, unless otherwise clearly defined and limited, the terms "connected", "connected", and "fixed" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the communication inside two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

[0097] In the present invention, unless otherwise clearly defined and limited, the first feature being "above" or "below" the second feature may include the direct contact between the first and second features, or may include the situation where the first and second features are not in direct contact but in contact through other features between them. Moreover, the first feature being "above", "above", and "on" the second feature includes that the first feature is directly above and obliquely above the second feature, or simply means that the horizontal height of the first feature is higher than that of the second feature. The first feature being "below", "below", and "under" the second feature includes that the first feature is directly below and obliquely below the second feature, or simply means that the horizontal height of the first feature is lower than that of the second feature.

[0098] In the description of this embodiment, the orientation or positional relationship terms such as "above", "below", "left", and "right" are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of description and simplifying the operation, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to the present invention. In addition, the terms "first" and "second" are only used for distinction in description and have no special meanings.

[0099] Embodiments of the present invention disclose a wafer pretreatment apparatus and a processing method.

[0100] Referring to Figures 1 to 5 , the wafer pretreatment apparatus includes a pretreatment chamber 1, a wafer fixing member 2, a lower spraying assembly 3, and an upper spraying assembly 4. The pretreatment chamber 1 is configured to accommodate a wafer in a horizontal state in the radial direction and all or part of a wafer in a vertical state in the axial direction; the wafer fixing member 2 is disposed in the pretreatment chamber 1 and is configured to receive and fix the wafer, and drive the wafer to rotate or horizontally rotate in the pretreatment chamber 1 under the action of an external force; the lower spraying assembly 3 is disposed in the pretreatment chamber 1 and below the wafer, and the spraying direction of the lower spraying assembly 3 faces the plating surface of the wafer, and is configured to spray a pretreatment liquid onto the plating surface according to an instruction received for performing a first pretreatment on the plating surface when the wafer fixing member 2 makes the plating surface of the wafer face the lower spraying assembly 3 horizontally downward and drives the wafer to rotate, so as to perform a first pretreatment on the plating surface; the upper spraying assembly 4 is disposed above the pretreatment chamber 1 and the spraying direction faces the plating surface of the wafer, and is configured to spray a pretreatment liquid onto the plating surface according to an instruction received for performing a second pretreatment on the plating surface when the wafer fixing member 2 makes the plating surface of the wafer face the upper spraying assembly 4 horizontally upward and drives the wafer to rotate, so as to perform a second pretreatment on the plating surface.

[0101] The pretreatment liquid can be water or other liquids, which can achieve the effects of cleaning and pre-wetting the wafer.

[0102] Specifically, the pretreatment chamber 1 can have different shapes such as a square body, and preferably can be in a cylindrical shape, which is consistent with the shape of the wafer. Its inner diameter and height are both greater than the diameter of the wafer. An opening is provided in the upper part of the pretreatment chamber 1, and the wafer fixing member 2 is located at the opening. The wafer fixing member 2 can receive and fix the wafer, and the fixing method can be adsorption fixing or different methods such as clamping fixing. The wafer fixing member 2 is rotatably disposed in the pretreatment chamber 1, and it can rotate around its own axis under the action of an external force, or can be turned over in the radial direction of the pretreatment chamber 1 to adjust the orientation of the plating surface.

[0103] The lower spraying assembly 3 includes at least one lower spray head, such as Figure 1 and Figure 2As shown in the figure, the lower spray head is arranged at the bottom or side wall inside the pretreatment chamber 1. When it is arranged at the bottom, the spray orifice of the lower spray head faces vertically upward. When it is arranged at the side wall, the lower spray head extends obliquely upward so that the spray orifice faces the wafer. The lower spray head can be connected to the liquid supply module through a pipeline. The liquid supply module is communicatively connected to the control module. The control module can generate an instruction for the first pretreatment. The instruction for the first pretreatment can be an instruction input manually or an instruction automatically generated by the control module after detecting that the wafer fixture 2 has completed flipping. This instruction can control the liquid supply module to start running, so as to inject the pretreatment liquid into the lower spray head and then spray it onto the plating surface by the lower spray head. The pretreatment liquid can be a liquid medium such as a fluid. The present invention does not limit this. Multiple lower spray heads can be distributed at intervals. The specific quantity can be designed according to the size of the wafer to be actually cleaned. The present invention does not limit this.

[0104] As Figure 2 shown, as the most preferred solution of this embodiment, the lower spray assembly 3 can be obliquely arranged on the surface of the inner side wall of the pretreatment chamber 1, and it forms a certain angle with the side wall. The horizontal angle is an acute angle. Figure 1 For the convenience of illustration, only one lower spray head is shown in the figure. In other embodiments, 2 or more lower spray heads can be arranged on the side wall, and each lower spray head has the same inclination angle and is on the same horizontal plane. The spray holes are arranged at the uppermost part of the lower spray head. With this arrangement, when the liquid sprayed out by the lower spray head cleans the plating surface of the wafer and then falls, it will not directly fall on the lower spray head, and it will not cause the impurities in the cleaning to contaminate the lower spray head. To ensure the spraying effect, as Figure 2 shown, the lower spray assembly 3 should have a certain distance from the lower part, so that the lower spray assembly 3 is close enough to the plating surface of the wafer to facilitate spraying and ensure the spraying effect. When Figure 1 the lower spray assembly 3 is arranged at the bottom, after the lower spray assembly 3 sprays the plating surface of the wafer, the cleaned liquid will fall into the lower spray assembly 3 and contaminate it. Moreover, as the liquid accumulates in the lower part, the liquid may submerge the lower spray assembly. Therefore, this embodiment preferably selects the solution of Figure 2 obliquely arranging the lower spray assembly 3 on the surface of the inner side wall of the pretreatment chamber 1.

[0105] The upper spray assembly 4 is located at the opening of the pretreatment chamber 1. It includes a sealing cover 41 and an upper spray head 42 arranged on the sealing cover 41. The upper spray head 42 is connected to the liquid supply module through a pipeline. The liquid supply module can be a separate liquid supply device or the same liquid supply module connected to the lower spray head, that is, one liquid supply module supplies liquid to both the upper spray head 42 and the lower spray head simultaneously.

[0106] The sealing cover 41 and the pretreatment cavity 1 can move relative to each other, providing sufficient space for the flipping of the wafer fixture 2. After the flipping is completed, the sealing cover 41 can close the opening of the pretreatment cavity 1 to seal the wafer inside the pretreatment cavity 1. When the control module generates an instruction for the second pretreatment, the corresponding liquid supply module is activated to inject the pretreatment liquid into the upper spray head 42, and the upper spray head 42 can then spray the pretreatment liquid onto the plating surface.

[0107] It should be understood that the operating parameters of the lower spray assembly 3 and the upper spray assembly 4 can be the same or different, and can be specifically designed according to the functions they perform. In this embodiment, both the lower spray assembly 3 and the upper spray assembly 4 play the roles of pre-cleaning and pre-wetting. Pre-cleaning can remove the impurities remaining in the recessed features on the plating surface of the wafer after processes such as exposure. Pre-wetting is to fill the pretreatment liquid into the recessed features on the wafer surface after the wafer is cleaned. Subsequently, when the plating surface of the wafer is electroplated, the pretreatment liquid remaining on the plating surface of the wafer will enter the reaction chamber together with the wafer.

[0108] By setting the wafer fixture 2 to hold and fix the wafer, after the wafer is fixed, the wafer fixture 2 flips to drive the wafer to flip, so that the plating surface of the wafer is horizontally downward and faces the lower spray assembly 3. The pretreatment cavity 1 moves upward to connect with the sealing cover 41 to close the opening of the pretreatment cavity 1. Then, the pretreatment cavity 1 is evacuated. The wafer fixture 2 can continuously drive the wafer to rotate at a certain speed. The lower spray assembly 3 is activated and operates with specified parameters to spray the pretreatment liquid onto the plating surface to perform the first pretreatment on the wafer. After the first pretreatment lasts for a certain period of time, the operation of the lower spray assembly 3 and the rotation of the wafer are stopped; after the pretreatment cavity 1 descends a sufficient distance, the wafer fixture 2 is controlled to flip so that the plating surface is horizontally upward and faces the upper spray assembly 4. Then, the pretreatment cavity 1 moves upward to connect with the sealing cover 41, and the sealing cover 41 closes the opening of the pretreatment cavity 1 again. The wafer fixture 2 can continuously drive the wafer to rotate at a certain speed. After receiving the instruction for the second pretreatment, the upper spray assembly 4 is activated and operates with specified parameters to spray the pretreatment liquid onto the plating surface to perform the second pretreatment on the wafer. After the second pretreatment lasts for a certain period of time, the entire pretreatment of the wafer is completed. Then, the wafer is transported to the next process by equipment such as a manipulator for processing, including being transferred to an electroplating equipment for electroplating process.

[0109] In the first pre-treatment stage of the wafer, the plating surface faces downward, so that when the pre-treatment liquid contacts the plating surface, it can wash away the residues on the plating surface, and the residues can also gradually separate from the concave features of the plating surface under the action of their own weight and be thrown out by the rotating wafer, thereby effectively improving the cleaning effect of the wafer. At the same time of cleaning, the wafer is pre-wetted to complete the first pre-treatment, and then the second pre-treatment is used to pre-wet and further pre-clean the wafer, so that there is a certain amount of pre-treatment liquid on the concave surface of the plating surface, and the possibility of containing residues is further reduced, so as to effectively improve the success rate and effect of the subsequent electroplating process.

[0110] Optionally, the wafer pre-treatment device further includes a flipping assembly 5. The flipping assembly 5 is arranged outside the pre-treatment cavity 1 and connected to the wafer fixture 2, and is configured to drive the wafer fixture 2 and the wafer fixed thereon to flip when receiving a flipping instruction, so that the plating surface of the wafer is flipped to be horizontally upward or horizontally downward after flipping.

[0111] Specifically, the flipping assembly 5 is located on the side wall of the pre-treatment cavity 1, and a part of it passes through the side wall of the pre-treatment cavity 1 and is connected to the wafer fixture 2. The flipping assembly 5 is internally provided with a driving element, such as a motor or an electric cylinder, etc., and a sealing structure is arranged at the part where the flipping assembly 5 passes through the pre-treatment cavity 1 to ensure good overall sealing of the pre-treatment cavity 1. The flipping assembly 5 can drive the wafer fixture 2 to flip by 0° to 180°, and its flipping angle can be accurately detected by a set detection element. The flipping assembly 5 is communicatively connected to the control module, and the control module can control the flipping assembly 5 to start or stop, and can also determine the state of the flipping assembly 5 according to the flipping angle.

[0112] By arranging the flipping assembly 5 outside the pre-treatment cavity 1, when the wafer needs to be flipped, the control module can send a flipping instruction. After receiving the corresponding instruction, the flipping assembly 5 starts and flips the wafer fixture 2 to flip the wafer by 180°, so that the plating surface can be horizontally upward or horizontally downward.

[0113] Optionally, the side surface of the wafer fixture 2 has a clamping ring groove 21; the flipping assembly 5 includes a flipping part 51 and a flipping driving part 52. The flipping part 51 is partially clamped in the clamping ring groove 21 and is slidably connected to the clamping ring groove 21; the flipping driving part 52 is arranged on the pre-treatment cavity 1 and connected to the flipping part 51 to drive the flipping part 51 to flip.

[0114] Specifically, the flipping driving member 52 is fixed on the outer side wall of the pretreatment cavity 1, which can be a motor. A driving shaft 53 is arranged on the motor shaft of the motor. The driving shaft 53 passes through the side wall of the pretreatment cavity 1 and extends into the pretreatment cavity 1. The flipping part 51 is fixed at the end of the driving shaft 53 away from the motor. The flipping part 51 and the driving shaft 53 can be an integral structure, or can be fixed by means such as welding, bonding, clamping or screws. The flipping part 51 is in a block shape, corresponding to the clamping ring groove 21, and a part of the flipping part 51 extends into the clamping ring groove 21. The extending part can form a clamping fixation with the clamping ring groove 21 and form a sliding fit. The clamping fixation enables the flipping part 51 to clamp the wafer fixing member 2 when the plating surface is horizontally downward, so as to ensure that the wafer fixing member 2 and the wafer fixed thereon will not fall. It should be understood that the flipping driving member 52 can also adopt other components, such as an electric cylinder, etc. The connection between the flipping driving member 52 and the flipping part 51 can be designed according to the actual installation space and transmission requirements, and the present invention does not make a limitation. In order to improve the installation stability of the wafer fixing member 2, a flipping part 51 can be respectively arranged on the opposite sides of the wafer fixing member 2. Any flipping part 51 is correspondingly provided with a flipping driving member 52, and the other flipping part 51 can be rotatably connected to the inner side wall of the pretreatment cavity 1 through a rotating shaft.

[0115] By providing the flipping part 51 and the flipping driving member 52, when it is necessary to flip the wafer fixing member 2, the flipping driving member 52 is started. The flipping driving member 52 drives the flipping part 51 to flip. The flipping part 51 presses the clamping ring groove 21, thereby driving the wafer fixing member 2 to flip. When the wafer fixing member 2 rotates, the groove side wall of the clamping ring groove 21 slides with the flipping part 51. At the same time, the flipping part 51 remains stationary to ensure that the wafer fixing member 2 remains stable during the rotation process.

[0116] Optionally, the flipping part 51 has a protruding part 511 and a fixing block 512 connected to the protruding part 511. A concave area is formed on both sides at the connection between the protruding part 511 and the fixing block 512, so that the cross section of the protruding part 511 is trapezoidal, and the cross section of the fixing block 512 is square.

[0117] Wherein, the shape of the clamping ring groove 21 matches the shape of the protruding part 511, so that the protruding part 511 can form a clamping state with the clamping ring groove 21. And in the clamping state, the wafer fixing member 2 can rotate around the protruding part 511 through the clamping ring groove 21.

[0118] Specifically, the flipping part 51 extends along the circumferential direction of the wafer fixing member 2. A convex part 511 is formed on the side of the flipping part 51 close to the wafer fixing member 2. The width of the convex part 511 is smaller on the side close to the fixing block 512 and larger on the other side, so that its cross-section is trapezoidal, while the cross-section of the fixing block 512 is square. The groove side walls of the clamping ring groove 21 are both inclined to form a trapezoidal cross-section, and are clamped with the convex part 511 in adaptation. The side wall of the convex part 511 is in sliding fit with the groove side wall of the clamping ring groove 21. In order to reduce friction, a smooth structure such as a lubricating film can be provided on the side surface of the convex part 511 or the groove side wall of the clamping ring groove 21, so that the two will not be worn during the sliding process, and at the same time, the convex part 511 and the clamping ring groove 21 can form a tight fit to prevent the wafer fixing member 2 from shaking.

[0119] By providing the convex part 511 on the fixing block 512, the convex part 511 and the clamping ring groove 21 form a clamping fit to achieve the smooth clamping and fixing of the flipping part 51 with the wafer fixing member 2, and the clamping ring groove 21 and the convex part 511 form a sliding fit, so that when the wafer fixing member 2 rotates, the clamping chute and the convex part 511 slide relative to each other.

[0120] Optionally, the wafer pretreatment device further includes a rotating assembly 6. The rotating assembly 6 is disposed on the upper part of the pretreatment cavity 1 and is configured to be in driving connection with the wafer fixing member 2 when the wafer fixing member 2 is moved upward from below to a position matching the rotating assembly 6, and to drive the wafer fixing member 2 and the wafer fixed thereon to rotate when receiving a rotation instruction.

[0121] Specifically, the rotating assembly 6 can be disposed on the sealing cover 41. When the pretreatment cavity 1 moves downward relative to the sealing cover 41, the rotating assembly 6 is separated from the wafer fixing member 2 by a sufficient distance. At this time, the wafer fixing member 2 can be flipped under the drive of the flipping assembly 5. After the flipping is completed, the pretreatment cavity 1 moves upward relative to the sealing cover 41. When the wafer fixing member 2 matches the rotating assembly 6 again, the rotating assembly 6 can form a driving connection with the wafer fixing member 2, and the rotating assembly 6 can drive the wafer fixing member 2 and the wafer to rotate. The rotating assembly 6 is in communication connection with the control module. The control module will automatically generate a rotation instruction to control the start of the rotating assembly 6 after detecting that the flipping assembly 5 moves to the specified position. After the rotating assembly 6 operates for a certain period of time, the control module can also generate a stop instruction to control the stop of the rotating assembly 6.

[0122] In this way, the rotating assembly 6 is directly disposed on the upper part of the pretreatment cavity 1. When the wafer fixing member 2 is flipped and moved to the specified position, it can automatically match with the rotating assembly 6 to form a driving connection, and the rotating assembly 6 can automatically drive the wafer fixing member 2 and the wafer to rotate in both the first pretreatment stage and the second pretreatment stage, improving the automation degree of the overall pretreatment process.

[0123] Optionally, the rotating assembly 6 includes a rotation driving member 61 and a driving gear 62. The driving gear 62 is disposed at the output end of the rotation driving member 61.

[0124] Specifically, the rotation driving member 61 may be a motor, which is fixed on the top wall of the sealing cover 41. A rotating shaft is provided on the motor shaft of the motor. The rotating shaft passes through the sealing cover 41 and is provided with the driving gear 62. A transmission module may be provided on the wafer fixing member 2, and the transmission module can be meshed with the driving gear 62. Thus, when the rotation driving member 61 drives the driving gear 62 to rotate, the wafer fixing member 2 can be smoothly driven to rotate. It should be understood that the rotation driving member 61 may also use a driving member such as an electric cylinder to drive the driving gear 62 to rotate. The specific type of the rotation driving member 61 can be selected according to actual driving requirements, and the present invention does not limit this.

[0125] Optionally, the wafer fixing member 2 includes a fixing ring 22 and a driven gear 23. A clamping ring groove 21 is provided on one side of the fixing ring 22, and the clamping ring groove 21 is configured to be slidably and fixedly connected to the flipping assembly 5. A wafer fixing groove 24 is provided on the other side, and the wafer fixing groove 24 is configured to fix the wafer; the driven gear 23 is disposed outside the fixing ring 22 and is configured to be meshed with the driving gear 62, and the driven gear 23 is driven to rotate by the driving gear 62.

[0126] Specifically, a wafer fixing groove 24 is formed on the top wall of the fixing ring 22 for receiving and fixing the wafer, and a clamping ring groove 21 is annularly formed on the bottom wall of the fixing ring 22. The driven gear 23 is provided on the outer side wall of the fixing ring 22. The driven gear 23 can be fixedly connected to the fixing ring 22 by welding or bonding, etc. The driven gear 23 integrally formed with the fixing ring 22 can also be directly formed by machining connecting teeth on the outer side wall of the fixing ring 22.

[0127] When the wafer is placed, the top wall of the fixing ring 22 faces upward to receive and fix the wafer. At this time, the flipping assembly 5 cooperates with the clamping ring groove 21 to support and fix the fixing ring 22. When it is necessary to rotate the fixing ring 22, the driven gear 23 is meshed with the driving gear 62, thereby further simplifying the complexity of the transmission structure, improving the transmission accuracy, and further improving the control accuracy of the rotation of the fixing ring 22.

[0128] Optionally, the wafer pretreatment device also includes a base plate 8 and a lifting assembly 7; the lifting assembly 7 is arranged on the base plate 8, and the pretreatment chamber 1 is arranged on the lifting assembly 7, and the lifting assembly 7 is configured to drive the pretreatment chamber 1 to approach the rotating assembly 6, so that when the wafer fixing part 2 is moved from bottom to top to a position matching the rotating assembly 6, it is transmission connected with the wafer fixing part 2; or the lifting assembly 7 is configured to drive the pretreatment chamber 1 away from the rotating assembly 6 by a target distance, and the target distance satisfies that the flipping assembly 5 can drive the wafer fixing part 2 and the wafer fixed thereto to flip smoothly with the rotating assembly 6 and the upper spray assembly 4, so that the coating surface of the wafer is flipped horizontally upward or horizontally downward.

[0129] Specifically, the base plate 8 is fixed on the ground or other platforms, and a lifting assembly 7 is arranged on the top wall of the base plate 8. The lifting assembly 7 includes a column 71. A plurality of columns 71 can be arranged at intervals around the pretreatment chamber 1. In the present embodiment, two columns 71 are arranged relatively to each other, and the pretreatment chamber 1 is located between the two columns 71. A guide rod connected to the pretreatment chamber 1 for sliding in a vertical direction is arranged in the column 71, and a connecting block 72 is arranged at the top of the guide rod. The connecting block 72 is fixedly connected to the outer wall of the pretreatment chamber 1, and the fixing method may be welding, bonding, clamping or bolting, etc.

[0130] A cylinder or the like is provided in at least one column 71 as a driving member, which can push the connection block 72 to rise or fall, thereby driving the pretreatment chamber 1 to rise or fall. The driving stroke of the driving member is the above-mentioned target distance, which needs to be larger than the space occupied by the wafer when it is flipped, so as to ensure that the wafer and the upper spray assembly 4 maintain a sufficient distance so that no contact occurs during the flipping process. The sealing cover 41 can be fixed at a corresponding position, and in order to increase the distance, a lifting structure can also be provided on the sealing cover 41 to drive its lifting and lowering, so as to ensure that the sealing cover 41 can smoothly close the pretreatment chamber 1.

[0131] By setting a lifting assembly 7 to drive the pretreatment chamber 1 to rise and fall, when the wafer needs to be placed or flipped, the lifting assembly 7 will be used to lower the pretreatment chamber 1 away from the upper spray assembly 4 and the rotating assembly 6, so that the wafer fixture 2 is disengaged from the rotating assembly 6, so that the wafer fixture 2 can be flipped by the flipping assembly 5, so that the plating surface of the wafer can be horizontally upward or horizontally downward. After the flipping is completed, the lifting assembly 7 drives the pretreatment chamber 1 to rise and approach the rotating assembly 6, so that the wafer fixture 2 and the rotating assembly 6 match and form a transmission connection, and the rotating assembly 6 can drive the wafer fixture 2 to rotate during the pretreatment process. The lifting assembly 7 can also be connected to the control module in communication, so that the operation and stop of the lifting assembly 7 can be automatically controlled by the program, thereby further improving the overall automation.

[0132] The above embodiments illustrate that when sealing the opening of the pretreatment chamber 1, the pretreatment chamber 1 moves up and down to dock with the sealing cover 41, so that the sealing cover 41 seals the opening of the pretreatment chamber 1.

[0133] In another embodiment, the pretreatment chamber 1 can be kept fixed, and the opening of the pretreatment chamber 1 is sealed by moving the sealing cover 41 up and down. In this technical solution, the sealing cover 41 can move up and down, and the sealing cover 41 docks and seals with the opening of the pretreatment chamber 1 through its own up and down movement. Although the accompanying drawings of this embodiment do not disclose the relevant structural design, similar to the scheme of moving the pretreatment chamber 1 up and down, a similar lifting component can be installed on the sealing cover 41, and the lifting component can be driven by a cylinder or a motor to drive the sealing cover 41 to move up and down. Synchronously, the lower spraying component and the rotating component can move synchronously with the sealing cover 41.

[0134] In this embodiment, the wafer fixing member 2 can be fixed at the opening of the pretreatment chamber 1. At this time, if the wafer is to be flipped without obstruction, it is necessary to ensure that the distance between the upper surface of the wafer and the sealing cover 41 is greater than or equal to the radius of the wafer. Therefore, when performing pretreatment, if the wafer is to be flipped, it is necessary to separate the pretreatment chamber 1 from the sealing cover 41 each time, and the separation distance between the two should be greater than or equal to the radius of the wafer to ensure unobstructed flipping of the wafer. Therefore, in the above first pretreatment and second pretreatment processes, it is necessary to repeatedly separate the pretreatment chamber 1 from the sealing cover 41, and after each separation, it is also necessary to repeatedly seal and dock the pretreatment chamber 1 with the sealing cover 41, and further it is necessary to repeatedly evacuate the inside of the pretreatment chamber 1 before pretreatment can be carried out.

[0135] Repeating the processes of separation, sealing and docking, and evacuation in the above operations is rather cumbersome and not conducive to pretreatment. In this embodiment, another scheme can be used to achieve wafer flipping after one-time sealing, which is more convenient for pretreatment.

[0136] In another scheme of this embodiment, referring to Figure 6 As shown, the pretreatment chamber 1 can move up and down to be connected and sealed with the sealing cover 41. The flipping component 5 and the wafer fixing member 2 are correspondingly arranged inside the pretreatment chamber 1. The upper surface of the wafer fixed by the wafer fixing member 2 has a first preset distance from the opening, and the lower surface of the wafer fixed by the wafer fixing member 2 has a second preset distance from the bottom of the pretreatment chamber 1; wherein, the first preset distance and the second preset distance satisfy the following conditions: when the opening of the pretreatment chamber 1 is in a sealed or unsealed state, the wafer fixed by the wafer fixing member can be flipped without obstruction.

[0137] As Figures 6 - 8As shown, the flipping component 5 is disposed outside the pretreatment cavity 1 and connected to the wafer fixing member 2, and is configured to drive the wafer fixing member 2 and the wafer fixed thereto to flip when receiving a flipping instruction, so that the plating surface of the wafer is flipped to be horizontally upward or horizontally downward after flipping. It should be noted that the flipping component 5 can drive the wafer fixing member 2 and the wafer fixed thereto to flip inside the pretreatment cavity 1.

[0138] With the above arrangement, when it is necessary to flip the wafer, it is not necessary to move the pretreatment chamber, and the flipping component 5 can be driven to drive the wafer fixing member 2 to flip the wafer, changing the up and down direction of the plating surface of the wafer.

[0139] Wherein, the wafer pretreatment device further includes:

[0140] A rotating component 6, disposed at the upper part of the pretreatment cavity 1, is configured to move downward to be in driving connection with the wafer fixing member 2 after the pretreatment cavity 1 moves upward and is sealed by the sealing cover 41, and to drive the wafer fixing member 2 and the wafer fixed thereto to rotate when receiving a rotation instruction.

[0141] The rotating component 6 includes a rotation driving member 61 and a driving gear 62, and the driving gear 62 is disposed at the output end of the rotation driving member 61; the wafer pretreatment device further includes an up and down driving member 9, connected to the rotation driving member 61, and is configured to drive the rotation driving member 61 to move up and down, and synchronously drive the driving gear 62 to move up and down through the up and down movement of the rotation driving member 61, so that the driving gear 62 is in driving connection with the wafer fixing member 2.

[0142] As Figure 6 and Figure 7 shown, it shows the situation after the pretreatment cavity 1 is moved upward and connected and sealed with the sealing cover 41. Figure 8 It shows the situation that after the pretreatment cavity 1 is sealed with the sealing cover 41, the up and down driving member 9 drives the rotation driving member 61 to move downward, and synchronously drives the driving gear 62 to move downward and engage with the driven gear 23.

[0143] The rotating component 6 further includes a rotating connecting rod 63 connecting the rotation driving member 61 and the driving gear 62. The rotating connecting rod 63 can also be the output shaft of the rotation driving member 61, and the rotation driving member 61 can be a driving device such as a motor. The rotation driving member 61 can drive the rotating connecting rod 63 to rotate, so as to drive the driving gear 62 to rotate, and synchronously drive the driven gear 23 engaged with the driving gear 62 to rotate, thereby rotating the wafer.

[0144] The up and down driving member 9 includes two support rods fixed to the sealing cover 41, and at least one of the two support rods is provided with a cylinder to drive the rotating component 6 to move up and down.

[0145] In this embodiment, the lifting assembly 7 can drive the pretreatment cavity 1 to be docked and sealed with the sealing cover 41; the up-and-down driving member 9 can drive the driving gear 62 to move up and down and mesh with the driven gear 23; the rotation driving member 61 can drive the driven gear 23 to rotate so as to drive the wafer fixing member 2 and the fixed wafer to rotate. Through the above actions, the pretreatment of the wafer can be realized.

[0146] To further illustrate the pretreatment process, during pretreatment, the lifting assembly 7 is controlled to move upward to dock and seal the pretreatment cavity 1 with the sealing cover 41, or the pretreatment cavity 1 is docked and sealed with the sealing cover 41 after the wafer is flipped; then, the up-and-down driving member 9 drives the rotation driving member 61 to move downward, and through the downward movement of the rotation driving member 61, the driving gear 62 is synchronously driven to move downward so that the driving gear 62 is in transmission connection with the wafer fixing member 2; then, the pretreatment cavity 1 can be evacuated, and when the internal environment of the pretreatment cavity 1 meets the vacuum environment for pretreatment, the rotation driving member 61 operates to drive the driving gear 62 to rotate, thereby synchronously driving the driven gear 23 and the wafer to rotate, and then, the first pretreatment or the second pretreatment can be carried out; when the wafer needs to be flipped after the first pretreatment or the second pretreatment is completed, at this time, the up-and-down driving member 9 drives the rotation driving member 61 to move upward, and through the upward movement of the rotation driving member 61, the driving gear 62 is synchronously driven to move upward so that the driving gear 62 is disengaged from the wafer fixing member 2 until the bottom of the driving gear 62 does not affect the flipping of the wafer, and then the flipping assembly 5 flips the wafer; then, the up-and-down driving member 9 drives the rotation driving member 61 to move downward to reconnect the driving gear 62 with the wafer fixing member 2 in transmission; the rotation driving member 61 operates to drive the driving gear 62 to rotate, thereby synchronously driving the driven gear 23 and the wafer to rotate, and then, the first pretreatment or the second pretreatment can be carried out.

[0147] The above process can directly flip the wafer without obstacles inside the pretreatment cavity 1. After flipping the wafer, the first pretreatment or the second pretreatment can be directly carried out, and so on until the pretreatment of the wafer meets the requirements of the electroplating process. After the pretreatment cavity 1 and the sealing cover 41 are sealed, the above process only needs to be evacuated once to complete the first pretreatment or the second pretreatment, and the number of pretreatments is not limited, making the pretreatment more convenient.

[0148] Figure 9 And Figure 10 The figure shows a wafer pretreatment method in which the flipping assembly 5 and the wafer fixing member 2 are correspondingly arranged at the opening of the pretreatment cavity 1. Among them, Figure 9 firstly, the first pretreatment is carried out and then the second pretreatment is carried out. The wafer is processed through two pretreatments so that the plating surface of the wafer meets the requirements of the electroplating process. Figure 10First, perform the second pre-treatment, then the first pre-treatment, and finally the second pre-treatment. The wafer is processed through three pre-treatments to make the plating surface of the wafer meet the requirements of the electroplating process.

[0149] Refer to Figure 9 , this wafer pre-treatment method includes:

[0150] Step S1: Control the pre-treatment chamber 1 to descend, and flip the wafer without obstruction so that its plating surface faces downward horizontally.

[0151] Since the flipping component 5 and the wafer fixing member 2 are correspondingly arranged at the opening of the pre-treatment chamber 1, in order to ensure the unobstructed flipping of the wafer, it is necessary to first control the pre-treatment chamber 1 to descend. It should be noted that in another solution, if the pre-treatment chamber 1 cannot move and the sealing cover 41 can move up and down, the sealing cover 41 can be controlled to rise so that the wafer can be flipped without obstruction; in another solution, when both the pre-treatment chamber 1 and the sealing cover 41 can move up and down, the pre-treatment chamber 1 can be controlled to descend and the sealing cover 41 can be controlled to rise so that the wafer can be flipped without obstruction.

[0152] When placing the wafer on the wafer fixing member 2, the plating surface of the wafer can face upward or downward. If it is downward, there is no need to flip the wafer. Only when the wafer faces upward is flipping required.

[0153] The unobstructed flipping described in this embodiment means that when the wafer is flipped, it will not come into contact or collision with other objects.

[0154] The wafer fixing member 2 drives the wafer to flip 180°, so that the plating surface can face downward horizontally and correspond to the lower spray component 3.

[0155] Step S2: Control the pre-treatment chamber 1 to rise for sealing, and correspondingly make the wafer in a rotating state.

[0156] After the plating surface faces downward horizontally, control the pre-treatment chamber 1 to rise and dock with the sealing cover 41 for sealing, so that the sealing cover 41 closes the cavity opening of the pre-treatment chamber 1, and make the wafer fixing member 2 form a transmission connection with the rotating component 6, so that the rotating component 6 can drive the wafer fixing member 2 to drive the wafer to rotate at a specified speed after starting.

[0157] It should be noted that before performing the first pre-treatment on the plating surface, it is necessary to evacuate the inside of the pre-treatment chamber 1 to make the inside of the pre-treatment chamber 1 meet the vacuum conditions for pre-treatment. Evacuation can be carried out after the pre-treatment chamber 1 rises and docks with the sealing cover 41 for sealing, and then control the rotating component 6 to drive the wafer fixing member 2 to rotate, so that it drives the wafer to be in a rotating state.

[0158] Step S3: The lower spray component 3 performs the first pre-treatment on the plating surface of the wafer.

[0159] After the wafer reaches a certain rotational speed, the lower spraying assembly 3 sprays a pretreatment liquid onto the plating surface. The pretreatment liquid comes into full contact with the plating surface to perform the first pretreatment on the plating surface.

[0160] Step S4: Control the pretreatment chamber 1 to descend, and flip the wafer without obstruction so that its plating surface faces upward horizontally.

[0161] After the first pretreatment is completed, the second pretreatment needs to be carried out, and the wafer needs to be further flipped. In order to ensure the unobstructed flipping of the wafer, it is necessary to lower the pretreatment chamber 1 to disengage from the sealing cover 41, creating sufficient flipping space between the two, and then directly flip the wafer 180° without obstruction so that the plating surface faces upward horizontally.

[0162] Step S5: Control the pretreatment chamber 1 to rise for sealing, and correspondingly keep the wafer in a rotating state.

[0163] When the plating surface faces upward horizontally, it is necessary to raise the pretreatment chamber 1 to dock with the sealing cover 41 so that the sealing cover 41 seals the pretreatment chamber 1. It should also be noted that when the sealing cover 41 can move up and down, the sealing cover 41 can be controlled to rise so that the wafer can be flipped without obstruction; when both the pretreatment chamber 1 and the sealing cover 41 can move up and down, the pretreatment chamber 1 can be controlled to descend and the sealing cover 41 can be controlled to rise so that the wafer can be flipped without obstruction.

[0164] After the wafer fixing member 2 and the rotating assembly 6 are in transmission connection by moving the pretreatment chamber 1 or / and the sealing cover 41 up and down, the rotating assembly 6 can be controlled to operate to drive the wafer fixing member 2 to drive the wafer to rotate at a specified rotational speed.

[0165] Step S6: The upper spraying assembly 4 performs the second pretreatment on the plating surface of the wafer.

[0166] When the wafer reaches the specified rotational speed, the pretreatment liquid is sprayed by the upper spraying assembly 4, and the pretreatment liquid performs the second pretreatment on the plating surface of the wafer.

[0167] Through this pretreatment method, the first pretreatment can be carried out when the plating surface faces downward horizontally, and the second pretreatment can be carried out when the plating surface faces upward horizontally. Both the first pretreatment and the second pretreatment include pre-cleaning and pre-wetting. Then, during the first pretreatment, the residual residues in the concave features of the plating surface are not only flushed by the pretreatment liquid but also can fall off under the action of their own weight, thereby improving the cleaning effect. At the same time, pre-wetting can retain some pretreatment liquid in the concave features of the plating surface. When the second pretreatment is carried out, the plating surface is pre-cleaned and pre-wetted again, thereby further improving the cleaning effect and wetting effect, reducing the possibility of residual residues remaining on the plating surface, and effectively improving the success rate and effect of electroplating.

[0168] In this embodiment, both the first pretreatment and the second pretreatment are separate processing procedures, and the first and second in this embodiment do not involve an order relationship.

[0169] The above content describes the process of first performing the first pretreatment and then the second pretreatment. Performing the first pretreatment first is mainly to thoroughly clean the plating surface of the wafer to ensure thorough and clean cleaning, and it also has the effect of pre-wetting; performing the second pretreatment is mainly to pre-wet the plating surface of the wafer to ensure the effect of pre-wetting. At the same time, it also has the effect of secondary cleaning, that is, after the cleaning in the first pretreatment, further cleaning is carried out to achieve a better cleaning effect.

[0170] Refer to Figure 10 , the wafer pretreatment method includes:

[0171] Step S10: Control the pretreatment chamber 1 to descend, and flip the wafer without obstruction so that its plating surface faces upward horizontally.

[0172] If the pretreatment chamber 1 is above, it is necessary to first control it to descend so that the wafer fixing member 2 has enough space to flip the wafer. If the pretreatment chamber 1 is below and the wafer can be flipped without obstruction, the wafer can be directly flipped.

[0173] Step S20: Control the pretreatment chamber 1 to rise for sealing, and correspondingly make the wafer in a rotating state.

[0174] The specific process can be referred to as described in step S2 above.

[0175] Step S30: Perform the second pretreatment on the plating surface of the wafer by the upper spraying assembly 4.

[0176] The specific process can be referred to as described in step S6 above.

[0177] Step S40: Control the pretreatment chamber 1 to descend, and flip the wafer without obstruction so that its plating surface faces downward horizontally.

[0178] The specific process can be referred to as described in step S1 above.

[0179] Step S50: Control the pretreatment chamber 1 to rise for sealing, and correspondingly make the wafer in a rotating state.

[0180] The specific process can be referred to as described in step S2 above.

[0181] Step S60: Perform the first pretreatment on the plating surface of the wafer by the lower spraying assembly 3.

[0182] The specific process can be referred to as described in step S3 above.

[0183] Step S70: Control the pretreatment chamber 1 to descend, and flip the wafer without obstruction so that its plating surface faces upward horizontally.

[0184] The specific process can be referred to as described in step S4 above.

[0185] Step S80: Control the pretreatment chamber 1 to ascend for sealing, and correspondingly rotate the wafer.

[0186] The specific process can be referred to as described in step S5 above.

[0187] Step S90: The upper spray assembly 4 performs a second pretreatment on the plating surface of the wafer.

[0188] The above Figure 10 The detailed content of the pretreatment process can be referred to Figure 9 the content involved therein, and the two have the same processing process.

[0189] Through this method, when preprocessing the wafer, the plating surface of the wafer can be first subjected to a second pretreatment, then flipped and subjected to a first pretreatment, and after completing the first pretreatment, it is flipped towards the second spray assembly for the second pretreatment. After completing the second pretreatment, the entire pretreatment process of the wafer can be completed. It should be understood that the number of the first pretreatment and the second pretreatment included in the specific pretreatment can be set according to actual process requirements, as long as it is ensured that the last step of the pretreatment is the second pretreatment.

[0190] The above content illustrates the process of first the second pretreatment, then the first pretreatment, and finally the second pretreatment. First, the second pretreatment, that is, the plating surface of the wafer is first pre-wetted and initially cleaned. Then, the first pretreatment is to thoroughly clean the plating surface of the wafer to ensure the cleaning effect. The final second pretreatment is that pre-wetting has the best effect when the plating surface faces upward. Therefore, the above three pretreatment processes can fully ensure the cleaning and wetting effects.

[0191] This embodiment also provides a circular pretreatment method, including:

[0192] Performing at least three pretreatments on the plating surface of the wafer, and the pretreatment is the first pretreatment or the second pretreatment;

[0193] Setting the plating surface of the wafer that meets the plating process upward, and waiting to be taken out for the electroplating process;

[0194] Among them, in the at least three pretreatments, at least one first pretreatment and one second pretreatment are included.

[0195] In multiple pre-treatments of the wafer, both the first pre-treatment and the second pre-treatment can clean and wet the plating surface of the wafer. During the first pre-treatment, the plating surface of the wafer faces downward, and its cleaning effect is better, enabling residual residues to be thrown out under the action of self-weight. During the second pre-treatment, the plating surface of the wafer faces upward, and at this time, the wetting effect is better, and the pre-treatment liquid is more likely to fill the defects. In order to ensure that the wetting effect meets the requirements, the last step in the pre-treatment process is set as the second pre-treatment to ensure that the pre-treatment liquid can remain on the plating surface. Specifically, the number and order of the first pre-treatment and the second pre-treatment can be designed according to the actual cleaning requirements and wetting requirements to be achieved, and the present application does not make any limitations. When the plating surface of the pre-treated wafer meets the electroplating process conditions, the plating surface of the wafer can be set facing upward and waiting to be taken out for the electroplating process.

[0196] The above content describes the processes of performing two pre-treatments, three pre-treatments, and more than three pre-treatments. However, if only one second pre-treatment (even if the pre-treatment is performed with the plating surface of the wafer facing downward) can make the plating surface of the wafer meet the electroplating process conditions, it is also possible to perform only one pre-treatment. It can be understood that the purpose of the pre-treatment is to make the plating surface of the wafer meet the electroplating process conditions. This embodiment is not limited to the specific number of pre-treatments, but the above processes of two pre-treatments, three pre-treatments, and more than three pre-treatments can better make the plating surface of the wafer meet the electroplating process conditions.

[0197] It should be further noted that Figure 9 through the process of first performing the first pre-treatment and then the second pre-treatment, or Figure 10 through the process of first performing the second pre-treatment, then the first pre-treatment, and finally the second pre-treatment, the cleaning and wetting effects can be fully guaranteed. However, it does not exclude that in some special cases, the plating surface is cleaned and / or wetted more times. But in order to ensure the best wetting effect, generally the last time must be the second pre-treatment, that is, the pre-treatment is performed with the plating surface of the wafer facing upward, so as to ensure the best pre-wetting effect. However, this is not absolute. As long as the pre-treatment of the plating surface of the wafer meets the electroplating process conditions, after reaching that, before taking out the wafer, the plating surface of the wafer needs to be placed facing upward, which is convenient for the external manipulator to take out the wafer from the pre-treatment chamber 1 and put it into the electroplating equipment for the electroplating process.

[0198] The above embodiments illustrate a wafer pretreatment method in which the flipping component 5 and the wafer fixing member 2 are correspondingly arranged at the opening of the pretreatment chamber 1. The following further illustrates that the wafer fixing member 2 is arranged inside the pretreatment chamber 1, and the upper surface of the wafer fixed by the wafer fixing member 2 has a first preset distance from the opening, and the lower surface of the wafer fixed by the wafer fixing member 2 has a second preset distance from the bottom of the pretreatment chamber 1; wherein, the first preset distance and the second preset distance satisfy the following conditions: when the orifice of the pretreatment chamber 1 is in a sealed or unsealed state, the wafer fixed by the wafer fixing member can be flipped without hindrance. This embodiment further illustrates the wafer pretreatment method in this case.

[0199] Another wafer pretreatment method provided in this embodiment, which is first pre-treated and then second pre-treated, includes:

[0200] Flip the wafer without hindrance so that its plating surface is horizontally downward;

[0201] Since the wafer can be flipped inside the pretreatment chamber 1, therefore, when performing the first pretreatment, if the placed wafer is not plating surface downward, the wafer can be directly flipped so that its plating surface is downward.

[0202] Control the pretreatment chamber 1 to rise for sealing, and correspondingly make the wafer in a rotating state;

[0203] Control the lifting component 7 to work, drive the pretreatment chamber 1 to move upward, and dock and seal the pretreatment chamber 1 with the sealing cover 41. Then, control the up and down driving member 9 to work, drive the rotating component 6 to move downward, and make the driving gear 62 mesh with the driven gear 23. Control the rotation driving member 61 to work, drive the driving gear 62 to rotate to synchronously drive the driven gear 23 to rotate, so that the wafer fixing member 2 and the wafer fixed by it rotate synchronously.

[0204] Perform the first pretreatment on the plating surface of the wafer by the lower spraying component 3;

[0205] It should be noted that before performing the first treatment, the pretreatment chamber 1 needs to be evacuated. The evacuation can be performed after the pretreatment chamber 1 is docked and sealed with the sealing cover 41. When the vacuum environment in the pretreatment chamber 1 meets the conditions for pretreatment, the wafer rotation can be controlled, and the first pretreatment can be performed at a certain rotation speed.

[0206] Flip the wafer without hindrance so that its plating surface is horizontally upward, and correspondingly make the wafer in a rotating state;

[0207] After the first pre-treatment is executed, the wafer can be directly and unobstructedly flipped inside the pre-treatment chamber 1, with its plating surface facing horizontally upward. To ensure the unobstructed flipping of the wafer, the upper and lower driving member 9 is controlled to operate, driving the rotating assembly 6 to rise, disengaging the driving gear 62 from the driven gear 23, and ensuring that the upper surface of the wafer fixed by the wafer fixing member 2 is at a first preset distance from the opening of the pre-treatment chamber 1. Based on the above first preset distance and the second preset distance, it can be ensured that the wafer can be flipped unobstructedly. After that, the wafer can be flipped so that its plating surface faces horizontally upward. The upper and lower driving member 9 is controlled to operate, driving the rotating assembly 6 to descend, and engaging the driving gear 62 with the driven gear 23 again; the rotation driving member 61 is controlled to operate, driving the driving gear 62 to rotate to synchronously drive the driven gear 23 to rotate, so that the wafer fixing member 2 and the wafer fixed by it rotate synchronously.

[0208] The second pre-treatment is performed on the plating surface of the wafer by the upper spraying assembly 4.

[0209] When the rotation speed of the wafer meets the conditions, the second pre-treatment can be performed on the plating surface.

[0210] Another wafer pre-treatment method provided in this embodiment, which first performs the second pre-treatment, then the first pre-treatment, and finally the second pre-treatment, includes:

[0211] Unobstructedly flip the wafer so that its plating surface faces horizontally upward;

[0212] Since the wafer can be flipped inside the pre-treatment chamber 1, therefore, when performing the second pre-treatment, if the placed wafer is not facing upward with its plating surface, the wafer can be directly flipped so that its plating surface faces upward.

[0213] Control the pre-treatment chamber 1 to rise for sealing, and correspondingly keep the wafer in a rotating state;

[0214] Control the lifting assembly 7 to operate, driving the pre-treatment chamber 1 to move upward, and docking and sealing the pre-treatment chamber 1 with the sealing cover 41. After that, control the upper and lower driving member 9 to operate, driving the rotating assembly 6 to move downward, and engaging the driving gear 62 with the driven gear 23. Control the rotation driving member 61 to operate, driving the driving gear 62 to rotate to synchronously drive the driven gear 23 to rotate, so that the wafer fixing member 2 and the wafer fixed by it rotate synchronously.

[0215] The second pre-treatment is performed on the plating surface of the wafer by the upper spraying assembly 4;

[0216] It should be noted that before performing the second treatment, the pre-treatment chamber 1 needs to be evacuated. The evacuation can be performed after the pre-treatment chamber 1 is docked and sealed with the sealing cover 41. When the vacuum environment in the pre-treatment chamber 1 meets the conditions for the pre-treatment, the wafer rotation can be controlled, and the second pre-treatment can be performed at a certain rotation speed.

[0217] The barrier-free flipping of the wafer makes its plating surface horizontally downward, and correspondingly makes the wafer in a rotating state;

[0218] Since the wafer can be flipped inside the pretreatment chamber 1, the wafer can be directly flipped to make its plating surface downward.

[0219] Control the up and down driving member 9 to work, drive the rotating assembly 6 to move downward, and make the driving gear 62 mesh with the driven gear 23. Control the rotation driving member 61 to work, drive the driving gear 62 to rotate to synchronously drive the driven gear 23 to rotate, and make the wafer fixing member 2 and the fixed wafer rotate synchronously.

[0220] The lower spraying assembly 3 performs the first pretreatment on the plating surface of the wafer;

[0221] The barrier-free flipping of the wafer makes its plating surface horizontally upward, and correspondingly makes the wafer in a rotating state;

[0222] The upper spraying assembly 4 performs the second pretreatment on the plating surface of the wafer.

[0223] When the rotation speed of the wafer meets the conditions, the second pretreatment can be performed on the plating surface.

[0224] This embodiment also provides a method of at least three pretreatments. Among the at least three pretreatments, at least one first pretreatment and one second pretreatment are included. When at least three pretreatments are performed on the plating surface of the wafer, the last pretreatment must be the second pretreatment with the plating surface of the wafer facing upward. For specific reference, please refer to the corresponding content above, and this embodiment will not be repeated here.

[0225] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, rather than limiting the implementation manners of the present invention. For those of ordinary skill in the art, various obvious changes, re-adjustments and substitutions can be made without departing from the protection scope of the present invention. It is not necessary and impossible to enumerate all the implementation manners here. Any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention shall be included within the protection scope of the claims of the present invention.

Claims

1. A wafer pretreatment device, characterized in that, Comprising: A pretreatment chamber (1), which is configured to accommodate wafers in a horizontal state in the radial direction and all or part of the wafers in a vertical state in the axial direction within the pretreatment chamber (1); A wafer fixing member (2), disposed within the pretreatment chamber (1), configured to receive and fix the wafer, and drive the wafer to flip or rotate horizontally within the pretreatment chamber (1) under the action of an external force; A lower spraying assembly (3), disposed on the sidewall of the pretreatment chamber (1) and located below the wafer, the spraying direction of the lower spraying assembly (3) facing the plating surface of the wafer, configured to spray a pretreatment liquid onto the plating surface according to an instruction received for performing a first pretreatment on the plating surface when the plating surface of the wafer faces the lower spraying assembly (3) horizontally downward and is driven to rotate by the wafer fixing member (2), so as to perform a first pretreatment on the plating surface; An upper spraying assembly (4), disposed above the pretreatment chamber (1) and the spraying direction facing the plating surface of the wafer, configured to spray a pretreatment liquid onto the plating surface according to an instruction received for performing a second pretreatment on the plating surface when the plating surface of the wafer faces the upper spraying assembly (4) horizontally upward and is driven to rotate by the wafer fixing member (2), so as to perform a second pretreatment on the plating surface; A flipping assembly (5), disposed outside the pretreatment chamber (1) and connected to the wafer fixing member (2), configured to drive the wafer fixing member (2) and the wafer fixed thereto to flip when a flipping instruction is received, so that the plating surface of the wafer is flipped to be horizontally upward or horizontally downward after flipping.

2. The wafer pretreatment device according to claim 1, wherein The wafer fixing member (2) is disposed at the internal opening of the pretreatment chamber (1).

3. The wafer preprocessing device according to claim 1, wherein The upper surface of the wafer fixed by the wafer fixing member (2) has a first preset distance from the opening, and the lower surface of the wafer fixed by the wafer fixing member (2) has a second preset distance from the bottom of the pretreatment chamber (1); Wherein, the first preset distance and the second preset distance satisfy the following condition: when the opening of the pretreatment chamber (1) is in a sealed or unsealed state, the wafer fixed by the wafer fixing member (2) can flip without obstruction.

4. The wafer preprocessing device according to claim 2, wherein The wafer pretreatment device further comprises: A rotating assembly (6), disposed at the upper part of the pretreatment chamber (1), configured to be in driving connection with the wafer fixing member (2) when the wafer fixing member (2) is moved upward from below to a position matching the rotating assembly (6), and drive the wafer fixing member (2) and the wafer fixed thereto to rotate when a rotation instruction is received.

5. The wafer pretreatment device according to claim 3, wherein The wafer pretreatment device further comprises: A rotating assembly (6), disposed at the upper part of the pretreatment chamber (1), configured to move downward to be in driving connection with the wafer fixing member (2) after the opening of the pretreatment chamber (1) is sealed, and drive the wafer fixing member (2) and the wafer fixed thereto to rotate when a rotation instruction is received.

6. The wafer preprocessing device according to claim 5, wherein, The rotating assembly (6) includes a rotation driving member (61) and a driving gear (62), and the driving gear (62) is disposed at the output end of the rotation driving member (61); The wafer pretreatment device further includes: an up-and-down driving member (9) connected to the rotation driving member (61), configured to drive the rotation driving member (61) to move up and down, and synchronously drive the driving gear (62) to move up and down through the up-and-down movement of the rotation driving member (61), so that the driving gear (62) is in transmission connection with the wafer fixing member (2).

7. The wafer pretreatment device according to any one of claims 2-6, characterized in that, The side surface of the wafer fixing member (2) has a clamping ring groove (21); the flipping assembly (5) includes: a flipping part (51) partially clamped in the clamping ring groove (21) and slidably connected to the clamping ring groove (21); a flipping driving member (52) disposed on the pretreatment cavity (1) and connected to the flipping part (51) to drive the flipping part (51) to flip.

8. The wafer pretreatment device according to claim 7, wherein, The flipping part (51) has a convex part (511) and a fixing block (512) connected to the convex part (511). A concave area is formed on both sides at the connection between the convex part (511) and the fixing block (512), so that the cross section of the convex part (511) is trapezoidal, and the cross section of the fixing block (512) is square; Wherein, the shape of the clamping ring groove (21) matches the shape of the convex part (511), so that the convex part (511) can form a clamping state with the clamping ring groove (21), and in the clamping state, the wafer fixing member (2) can rotate around the convex part (511) through the clamping ring groove (21).

9. The wafer pretreatment apparatus according to claim 4, wherein The wafer pretreatment device further includes: a bottom plate (8); a lifting assembly (7) disposed on the bottom plate (8), the pretreatment cavity (1) is disposed on the lifting assembly (7), and the lifting assembly (7) is configured to drive the pretreatment cavity (1) to approach the rotating assembly (6), so that when the wafer fixing member (2) is moved upward from the bottom to a position matching the rotating assembly (6), it is in transmission connection with the wafer fixing member (2); or the lifting assembly (7) is configured to drive the pretreatment cavity (1) to be away from the rotating assembly (6) by a target distance, and the target distance satisfies that the flipping assembly (5) can drive the wafer fixing member (2) and the wafer fixed thereon to flip without obstruction with the rotating assembly (6) and the upper spraying assembly (4), so that the plating surface of the wafer is flipped to be horizontal upward or horizontal downward after flipping.

10. The wafer preprocessing device according to claim 4, wherein, The rotating assembly (6) includes: a rotation driving member (61); a driving gear (62) disposed at the output end of the rotation driving member (61).

11. The wafer preprocessing apparatus according to claim 6 or 10, characterized in that, The wafer fixing member (2) includes: a fixing ring (22) with a clamping ring groove (21) provided on one side, the clamping ring groove (21) is configured to be slidably and fixedly connected to the flipping assembly (5), and a wafer fixing groove (24) is provided on the other side, and the wafer fixing groove (24) is configured to fix the wafer; The driven gear (23) is arranged on the outer side of the fixing ring (22) and is configured to be meshed with the driving gear (62), so that the driven gear (23) is driven to rotate by the driving gear (62).

12. The wafer pretreatment device according to any one of claims 1-6, characterized in that, The upper spray assembly (4) comprises: A sealing cover (41) is arranged at the upper part of the opening of the pretreatment chamber (1) and is configured to be butted and sealed with the opening of the pretreatment chamber (1) when the plated surface of the wafer faces upward or downward, so that the plated surface of the wafer is subjected to the first pretreatment or the second pretreatment; The upper shower head (42) is arranged below the sealing cover (41) and has a spraying direction toward the wafer.

13. A wafer preprocessing method for preprocessing a wafer by the wafer preprocessing apparatus according to any one of claims 1 to 12, characterized in that, include: Controlling the pretreatment chamber (1) to descend, and turning the wafer over without obstacles so that its plated surface is horizontally facing downward; Controlling the pretreatment chamber (1) to rise and seal, and correspondingly placing the wafer in a rotating state; The lower spray assembly (3) performs a first pretreatment on the plated surface of the wafer; Controlling the pretreatment chamber (1) to descend, and turning the wafer over without obstacles so that the plated surface is horizontally facing upward; Controlling the pretreatment chamber (1) to rise and seal, and correspondingly placing the wafer in a rotating state; The upper spray assembly (4) performs a second pretreatment on the plated surface of the wafer.

14. A wafer pretreatment method for pretreating a wafer by the wafer pretreatment apparatus according to any one of claims 1 to 12, characterized in that, include: Controlling the pretreatment chamber (1) to descend, and turning the wafer over without obstacles so that the plated surface is horizontally facing upward; Controlling the pretreatment chamber (1) to rise and seal, and correspondingly placing the wafer in a rotating state; The upper spray assembly (4) performs a second pretreatment on the plated surface of the wafer; Controlling the pretreatment chamber (1) to descend, and turning the wafer over without obstacles so that its plated surface is horizontally facing downward; Controlling the pretreatment chamber (1) to rise and seal, and correspondingly placing the wafer in a rotating state; The lower spray assembly (3) performs a first pretreatment on the plated surface of the wafer; Controlling the pretreatment chamber (1) to descend, and turning the wafer over without obstacles so that the plated surface is horizontally facing upward; Controlling the pretreatment chamber (1) to rise and seal, and correspondingly placing the wafer in a rotating state; The upper spray assembly (4) performs a second pretreatment on the plated surface of the wafer.

15. A wafer preprocessing method for preprocessing a wafer by the wafer preprocessing apparatus according to any one of claims 1 to 12, characterized in that, include: Flip the wafer without any obstacles so that the plated surface is horizontal and facing downward; Controlling the pretreatment chamber (1) to rise and seal, and correspondingly placing the wafer in a rotating state; The lower spray assembly (3) performs a first pretreatment on the plated surface of the wafer; Flip the wafer without obstacles so that the plated surface is horizontal and upward, and keep the wafer in a rotating state accordingly; The upper spray assembly (4) performs a second pretreatment on the plated surface of the wafer.

16. A wafer preprocessing method for preprocessing a wafer by the wafer preprocessing apparatus according to any one of claims 1 to 12, characterized in that, include: Flip the wafer without any obstacles so that the plated surface is horizontal and upward; Controlling the pretreatment chamber (1) to rise and seal, and correspondingly placing the wafer in a rotating state; The upper spray assembly (4) performs a second pretreatment on the plated surface of the wafer; Flip the wafer without obstacles so that its plated surface is horizontally downward, and correspondingly put the wafer in a rotating state; The lower spray assembly (3) performs a first pretreatment on the plated surface of the wafer; Flip the wafer without obstacles so that the plated surface is horizontal and upward, and keep the wafer in a rotating state accordingly; The upper spray assembly (4) performs a second pretreatment on the plated surface of the wafer.

17. A wafer preprocessing method for preprocessing a wafer by the wafer preprocessing apparatus according to any one of claims 1 to 12, characterized in that, include: Performing pretreatment on the plated surface of the wafer three or more times, wherein the pretreatment is the first pretreatment or the second pretreatment; Set the plating surface of the wafer that meets the plating process facing upward and wait to be taken out for the electroplating process; Among them, in the above-mentioned pretreatment for more than three times, it includes at least one first pretreatment and one second pretreatment.

18. The wafer preprocessing method according to any one of claims 13-17, characterized in that, Both the first pretreatment and the second pretreatment include pre-cleaning and pre-wetting.

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