Electrostatic chuck and plasma etching system

Abstract

The invention discloses an electrostatic chuck and a plasma etching system, and the electrostatic chuck comprises an insulating heating layer which is used for heating a to-be-processed workpiece; the base is connected with the insulating heating layer, and a sealed moving space is formed between the insulating heating layer and the base; the cooling assembly and / or the insulating heating layer can move in the moving space, and the distance between the cooling assembly and the insulating heating layer is adjusted. Through relative movement of the cooling assembly and the insulation heating layer, the distance between the cooling assembly and the insulation heating layer is increased in the process that the insulation heating layer heats the workpiece to be machined, so that heat exchange between the cooling assembly and the insulation heating layer is reduced, and the insulation heating layer can achieve rapid heating and reach the temperature required by the etching process. In the cooling process of the insulation heating layer, the distance between the cooling assembly and the insulation heating layer is reduced, heat exchange is conducted between the cooling assembly and the insulation heating layer, and rapid cooling of the insulation heating layer is achieved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and particularly to an electrostatic chuck and a plasma etching system. Background Art

[0002] In the semiconductor integrated circuit manufacturing process, etching is one of the most important processes, and plasma etching is one of the commonly used etching methods.

[0003] Etching occurs in a vacuum reaction chamber, which includes an electrostatic chuck for carrying a wafer, a radio frequency load, and cooling the wafer, etc. The electrostatic chuck is placed on a base in the middle of the vacuum reaction chamber, and the wafer is located on the upper surface of the electrostatic chuck. Radio frequency power is applied to the electrodes at the top of the base to form a plasma of the reaction gas in the vacuum reaction chamber for processing the wafer.

[0004] Currently, the electrostatic chuck is installed on the equipment base, and the coolant enters the inside of the electrostatic chuck through the equipment base to maintain the bottom of the electrostatic chuck within a basic temperature range. At the same time, the heating layer inside the electrostatic chuck continuously heats up to raise and maintain the temperature of the upper surface of the electrostatic chuck within a higher temperature range. However, during the rise of the temperature of the upper surface of the electrostatic chuck, due to the circulation of the coolant at the bottom of the electrostatic chuck, the heating efficiency of the heating layer inside the electrostatic chuck is greatly reduced, and the heating rate is slow, unable to meet the process requirements.

[0005] Therefore, how to enable the electrostatic chuck to achieve rapid high temperature to meet the requirements of the etching process is a technical problem that needs to be solved urgently by those skilled in the art. Summary of the Invention

[0006] In view of this, the present invention provides an electrostatic chuck to enable the electrostatic chuck to achieve rapid high temperature to meet the requirements of the etching process. In addition, the present invention also provides a plasma etching system having the above electrostatic chuck.

[0007] To achieve the above object, the present invention provides the following technical solutions:

[0008] An electrostatic chuck, comprising:

[0009] An insulating heating layer for heating a workpiece to be processed;

[0010] A base connected to the insulating heating layer, and there is a sealed moving space between the insulating heating layer and the base;

[0011] A cooling assembly, wherein the cooling assembly and / or the insulating heating layer can move in the moving space to adjust the distance between the cooling assembly and the insulating heating layer.

[0012] Preferably, in the above-described electrostatic chuck, the insulating heating layer is fixedly connected to the base, and the cooling assembly can move in a first direction, which is the direction of the line connecting the insulating heating layer and the base.

[0013] Preferably, in the above-described electrostatic chuck, the cooling assembly includes:

[0014] A coolant circulation system for cooling the insulating heating layer;

[0015] A heat transfer layer that can move in the first direction within the moving space for heat exchange between the coolant circulation system and the insulating heating layer.

[0016] Preferably, in the above-described electrostatic chuck, the coolant circulation system is arranged within the base;

[0017] The coolant circulation system includes a coolant inlet channel and a coolant outlet channel that penetrate the base.

[0018] Preferably, in the above-described electrostatic chuck, the heat transfer layer includes a plurality of heat conducting fins;

[0019] The base has accommodation grooves for accommodating the heat conducting fins, and the accommodation grooves correspond to the heat conducting fins one by one;

[0020] The insulating heating layer has fitting grooves for accommodating the heat transfer layer, and the fitting grooves correspond to the accommodation grooves one by one and are arranged opposite to form an accommodation space, and the heat conducting fins move within the accommodation space.

[0021] Preferably, in the above-described electrostatic chuck, the heat conducting fins are annular fins and are concentrically arranged;

[0022] Both the accommodation grooves and the fitting grooves are annular grooves and are respectively concentrically arranged.

[0023] Preferably, in the above-described electrostatic chuck, it further includes a driving member for driving the heat transfer layer to move,

[0024] The heat conducting fins all penetrate the base and are all connected to the driving member, and the driving member can drive the heat conducting fins to fit with the insulating heating layer.

[0025] Preferably, in the above-described electrostatic chuck, the coolant circulation system is located within the heat transfer layer.

[0026] Preferably, in the above-described electrostatic chuck, it further includes a driving member for driving the heat transfer layer to move,

[0027] The coolant circulation system includes a coolant inlet passage and a coolant outlet passage that penetrate the base; the driving member can drive the heat transfer layer to fit with the insulating heating layer through the coolant inlet passage and the coolant outlet passage.

[0028] Preferably, in the above-mentioned electrostatic chuck, drive posts are arranged in both the coolant inlet passage and the coolant outlet passage. One end of the drive post is fixedly connected to the heat transfer layer, and the other side is connected to the driving member. The driving member drives the heat transfer layer to move through the drive post.

[0029] Preferably, in the above-mentioned electrostatic chuck, it further includes:

[0030] A sealed bellows, which is located in the moving space, and the sealed bellows are sleeved outside both the coolant inlet passage and the coolant outlet passage. The sealed bellows is telescopic, with one end sealed to the heat transfer layer and the other end sealed to the base.

[0031] Preferably, in the above-mentioned electrostatic chuck, it further includes a vacuum pumping device communicating with the moving space and an inert gas supply device communicating with the moving space.

[0032] Preferably, in the above-mentioned electrostatic chuck, the insulating heating layer includes:

[0033] An insulating housing;

[0034] Heating electrodes, which are arranged inside the insulating housing and are used to heat the workpiece to be processed;

[0035] Adsorption electrodes, which are arranged inside the insulating housing and are used to electrostatically adsorb the workpiece to be processed;

[0036] The heating electrodes are located between the adsorption electrodes and the base.

[0037] A plasma etching system includes a base and an electrostatic chuck mounted on the base. Among them, the electrostatic chuck is the electrostatic chuck described in any one of the above.

[0038] Preferably, in the above-mentioned plasma etching system, the base of the electrostatic chuck is connected to the base through an elastic member.

[0039] Preferably, in the above-mentioned plasma etching system, the coolant inlet passage and the coolant outlet passage of the coolant circulation system of the electrostatic chuck both penetrate the base;

[0040] The pipelines of the vacuum pumping device and the pipelines of the inert gas supply device of the electrostatic chuck both penetrate the base.

[0041] The present invention discloses an electrostatic chuck. During the heating of a workpiece to be processed by an insulating heating layer, the distance between a cooling component and the insulating heating layer increases through the relative movement of the cooling component and the insulating heating layer, so as to reduce the heat exchange between the cooling component and the insulating heating layer, enabling the insulating heating layer to achieve rapid heating and reach the temperature required for the etching process. During the cooling process of the insulating heating layer, the distance between the cooling component and the insulating heating layer decreases, and heat exchange occurs with the insulating heating layer, realizing the rapid cooling of the insulating heating layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the following-described drawings are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0043] Figure 1 It is a working schematic diagram of a plasma etching system disclosed in the prior art;

[0044] Figure 2 It is a schematic structural diagram of the first electrostatic chuck in the heating state disclosed in the embodiment of the present invention;

[0045] Figure 3 It is a schematic structural diagram of the first electrostatic chuck in the cooling state disclosed in the embodiment of the present invention;

[0046] Figure 4 It is a schematic structural diagram of the second electrostatic chuck in the heating state disclosed in the embodiment of the present invention;

[0047] Figure 5 It is a schematic structural diagram of the second electrostatic chuck in the cooling state disclosed in the embodiment of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0048] The present invention discloses an electrostatic chuck, enabling the electrostatic chuck to achieve rapid high temperature to meet the requirements of the etching process. In addition, the present invention also discloses a plasma etching system having the above electrostatic chuck.

[0049] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present invention.

[0050] In the following, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features.

[0051] Etching occurs in a vacuum reaction chamber, which includes an electrostatic chuck for carrying wafers, RF loads, and cooling wafers. The electrostatic chuck is placed on a base in the middle of the vacuum reaction chamber, and the wafer is located on the upper surface of the electrostatic chuck. RF power is applied to the electrode on the top of the base to form a plasma of reactive gas in the vacuum reaction chamber to process the wafer.

[0052] The specific etching process of the wafer is as follows: manually place the wafer on the transfer robot in the transfer chamber under atmospheric conditions, close the transfer chamber cover, and evacuate the transfer chamber; after the chamber pressures of the transfer chamber and the vacuum reaction chamber are balanced, open the gate valve between the two chambers, and the robot carries the wafer into the vacuum reaction chamber. After reaching the top of the electrostatic chuck, the ejector pin mechanism at the bottom of the electrostatic chuck raises the ejector pin to lift the wafer from the robot, and the robot withdraws from the vacuum reaction chamber and returns to the transfer chamber; the gate valve is closed, and the ejector pin mechanism drives the ejector pin to descend, and the wafer descends to the electrode surface; the electrostatic chuck is energized to adsorb the wafer on the electrode surface, and the vacuum reaction chamber starts the etching process, introducing process gas and connecting the RF power supply.

[0053] After the etching process is completed, the ejector pin rises, the wafer is lifted up, the gate valve opens, the robot enters the vacuum reaction chamber and reaches directly under the wafer, the ejector pin descends, the wafer falls onto the surface of the robot, and the robot carrier exits the vacuum reaction chamber and returns to the transfer chamber; the gate valve is closed, the transfer chamber is inflated, and when the chamber pressure reaches the atmospheric state, the transfer chamber cover is opened to take out the wafer to obtain the etched wafer.

[0054] Combining the above etching process, it can be known that the electrostatic chuck, as a mechanism for carrying the wafer during the etching process, is the most important factor affecting the etching uniformity of the wafer during the entire etching process.

[0055] Combination Figure 1As shown, during the etching process, the wafer 1 is placed on the electrostatic chuck 02, and the electrostatic chuck 02 is installed on the equipment base 3. The coolant enters the inside of the electrostatic chuck 02 through the equipment base 3 to keep the bottom of the electrostatic chuck 02 within a basic temperature range. At the same time, the heating layer inside the electrostatic chuck 02 continuously heats up, causing the temperature of the upper surface of the electrostatic chuck 02 to rise and be maintained within a relatively high temperature range, such as 300 °C. However, during the rise of the temperature of the upper surface of the electrostatic chuck 02, due to the circulation of the coolant at the bottom of the electrostatic chuck 02 (maintaining the thermal balance of the system), the heating efficiency of the heating layer inside the electrostatic chuck 02 is greatly reduced, and the heating rate is slow, unable to meet the process requirements.

[0056] Based on the above technical problems, combined with Figures 2 to 5 As shown, the present invention discloses an electrostatic chuck 2, which can achieve rapid high temperature to meet the requirements of the etching process.

[0057] As Figure 2 and Figure 4 The electrostatic chuck 2 shown, which includes: an insulating heating layer 201, a base 204, and a cooling component.

[0058] Among them, the insulating heating layer 201 is used to heat the workpiece to be processed. In some embodiments, when the electrostatic chuck 2 is applied to the etching process, the workpiece to be processed is a wafer.

[0059] The base 204 is connected to the insulating heating layer 201. After the base 204 is connected to the insulating heating layer 201, a sealed moving space 205 is formed between the insulating heating layer 201 and the base 204. The size of the moving space 205 can be set according to different needs and is within the protection range.

[0060] The cooling component and / or the insulating heating layer 201 can move within the moving space 205 to adjust the distance between the cooling component and the insulating heating layer 201.

[0061] Through the relative movement of the cooling component and the insulating heating layer 201, during the heating of the workpiece to be processed by the insulating heating layer 201, the distance between the cooling component and the insulating heating layer 201 increases to reduce the heat exchange between the cooling component and the insulating heating layer 201, enabling the insulating heating layer 201 to achieve rapid heating and reach the temperature required by the etching process. During the cooling process of the insulating heating layer 201, the distance between the cooling component and the insulating heating layer 201 decreases and heat exchange occurs with the insulating heating layer 201 to achieve rapid cooling of the insulating heating layer 201.

[0062] In some embodiments, the cooling component can be fixed in place, while the movable insulating heating layer 201 is moved. During the movement of the movable insulating heating layer 201, the insulation of the heating structure needs to be ensured. To ensure the heating of the workpiece to be processed, the workpiece to be processed needs to move synchronously with the insulating heating layer 201.

[0063] By moving the insulating heating layer 201, the distance between the insulating heating layer 201 and the cooling component can be changed.

[0064] In some embodiments, the cooling component and the insulating heating layer 201 can also be both arranged as movable structures, that is, relative movement can be generated between the two to change the distance between the insulating heating layer 201 and the cooling component.

[0065] Of course, in some embodiments, the insulating heating layer 201 can also be fixedly connected to the base 204, while the cooling component can move relative to the insulating heating layer 201 in the moving space 205 along a first direction, where the first direction is the direction of the line connecting the insulating heating layer 201 and the base 204. Preferably, the first direction is the height direction of the moving space 205.

[0066] It should be noted that the connection manner between the base 204 and the insulating heating layer 201 includes but is not limited to welding or silicone bonding.

[0067] Such as Figure 2 and Figure 3 The cooling component disclosed in the embodiments shown includes: a coolant circulation system 207 and a heat transfer layer 206.

[0068] Among them, the coolant circulation system 207 is arranged in the base 204, and the base 204 can be cooled through the coolant circulation system 207. The coolant circulation system 207 includes a coolant inlet channel, a coolant outlet channel, and a circulation channel arranged in the base 204.

[0069] The specific structure of the coolant circulation system 207 is not limited herein, and existing known coolant circulation systems can be referred to.

[0070] The above-mentioned heat transfer layer 206 is used for heat exchange between the coolant circulation system 207 and the insulating heating layer 201. The heat transfer layer 206 can move relative to the insulating heating layer 201 in the moving space 205 along the first direction.

[0071] In this embodiment, the coolant circulation system 207 is fixed on the base 204, and whether the cold quantity of the coolant circulation system 207 is transferred to the insulating heating layer 201 is realized through the heat transfer layer 206 that can move along the first direction.

[0072] Such as Figure 2As shown, during the heating of the workpiece to be processed by the insulation heating layer 201, the heat transfer layer 206 moves away from the insulation heating layer 201 to reduce the heat exchange between the heat transfer layer 206 and the insulation heating layer 201, enabling the insulation heating layer 201 to achieve rapid heating and reach the temperature required by the etching process.

[0073] As Figure 3 shown, when it is necessary to cool down the insulation heating layer 201, the heat transfer layer 206 moves towards the insulation heating layer 201 and fits with the insulation heating layer 201, resulting in heat exchange and achieving rapid cooling of the insulation heating layer 201.

[0074] It should be noted that the heat transfer layer 206 in the present invention includes a plurality of heat conducting sheets, and the base 204 has accommodation grooves for accommodating the heat conducting sheets, and the accommodation grooves correspond to the heat conducting sheets one by one; the insulation heating layer 201 has fitting grooves for accommodating the heat transfer layer 206, and the fitting grooves correspond to the accommodation grooves one by one and are arranged opposite to form an accommodation space, and the above-mentioned heat conducting sheets move within the accommodation space.

[0075] By providing the accommodation grooves and the fitting grooves, the movement of the heat conducting sheets is guided, and the heat conducting sheets fit with the accommodation grooves, which can increase the heat exchange area between the heat conducting sheets and the base 204 and improve the heat exchange efficiency; the heat conducting sheets fit with the fitting grooves, which can increase the heat exchange area between the heat conducting sheets and the insulation heating layer 201 and improve the heat exchange efficiency.

[0076] There is no limitation on the dimensions of the accommodation grooves and the fitting grooves here.

[0077] In some embodiments, the heat conducting sheets are annular sheets and are concentrically arranged; both the accommodation grooves and the fitting grooves are annular grooves and are respectively concentrically arranged. The use of annular sheet-structured heat conducting sheets can increase the heat exchange area between the heat transfer layer 206 and the insulation heating layer 201 and the base 204.

[0078] The heat transfer layer 206 disclosed in the present invention includes, but is not limited to, a concentrically arranged circular ring structure, and any structure capable of heat exchange is within the protection scope.

[0079] To realize the movement of the heat transfer layer 206, the electrostatic chuck 2 in the present invention further includes a driving member 208 for driving the heat transfer layer 206 to move. The above-mentioned heat conducting sheets all penetrate through the base 204 and are all connected to the driving member 208, and the driving member 208 can drive the heat conducting sheets to fit with the insulation heating layer 201.

[0080] Combined with Figure 2 and Figure 3As shown, the driving member 208 includes, but is not limited to, a cylinder. A groove is provided on the side of the base 204 away from the insulating heating layer 201. The heat transfer layer 206 is connected to the driving member 208 at the groove, and under the driving action of the driving member 208, the heat transfer layer 206 moves in the groove along the first direction, thereby driving the part of the heat transfer layer 206 located in the moving space 205 to move along the first direction until it fits against the insulating heating layer 201.

[0081] In Figure 4 and Figure 5 the cooling assembly disclosed in the illustrated embodiment includes: a coolant circulation system 207 and a heat transfer layer 206.

[0082] Among them, the coolant circulation system 207 is arranged inside the heat transfer layer 206, and the heat transfer layer 206 can be cooled through the coolant circulation system 207. The coolant circulation system 207 includes a coolant inlet channel, a coolant outlet channel, and a circulation channel arranged inside the heat transfer layer 206.

[0083] The specific structure of the coolant circulation system 207 is not limited herein, and reference can be made to existing known coolant circulation systems.

[0084] The above-mentioned heat transfer layer 206 is used for heat exchange between the coolant circulation system 207 and the insulating heating layer 201. The heat transfer layer 206 can move relative to the insulating heating layer 201 in the moving space 205 along the first direction and drive the coolant circulation system 207 to move synchronously, that is, the coolant circulation system 207 and the heat transfer layer 206 move as a whole.

[0085] To realize the movement of the heat transfer layer 206, the electrostatic chuck 2 in this embodiment further includes a driving member 208 for driving the heat transfer layer 206 to move.

[0086] The coolant circulation system 207 includes a coolant inlet channel and a coolant outlet channel penetrating through the base 204; among them, the driving member 208 can drive the heat transfer layer 206 to fit against the insulating heating layer 201 through the coolant inlet channel and the coolant outlet channel.

[0087] Since the coolant circulation system 207 is arranged inside the heat transfer layer 206, the coolant circulation system 207 and the heat transfer layer 206 are of an integral structure. When it is necessary to move the heat transfer layer 206, the overall movement of the heat transfer layer 206 and the coolant circulation system 207 can be realized by moving the coolant circulation system 207.

[0088] In some embodiments, in order to enable the driving member 208 to drive the coolant inlet channel and the coolant outlet channel, therefore, the coolant inlet channel and the coolant outlet channel can be rigid pipe fittings.

[0089] If the coolant inlet channel and the coolant outlet channel are hoses, drive columns 209 can be arranged in both the coolant inlet channel and the coolant outlet channel. One end of each drive column 209 is fixedly connected to the heat transfer layer 206, and the other side is connected to the driving member 208. Thus, the driving member 208 can drive the heat transfer layer 206 to move through the drive column 209, realizing the change in the distance between the heat transfer layer 206 and the insulation heating layer 201.

[0090] To prevent the sealing state of the moving space 205 from being damaged due to the movement of the drive column 209, sealing bellows 210 are sleeved outside both the coolant inlet channel and the coolant outlet channel of the present invention. The sealing bellows 210 are expandable corrugated pipe fittings, with one end sealed to the heat transfer layer 206 and the other end sealed to the base 204.

[0091] In some embodiments, the sealing bellows 210 are made of metal, and the sealing bellows 210 are welded to connect the heat transfer layer 206 and the base 204; the spaces inside and outside the sealing bellows 210 can be completely isolated, realizing the state of vacuum outside and atmosphere inside the sealing bellows 210.

[0092] In summary, the core of the present invention is that the heat transfer layer 206 of the cooling assembly can move in the moving space 205 along the first direction, and is used for heat exchange between the coolant circulation system 207 and the insulation heating layer 201.

[0093] The electrostatic chuck 2 of the present invention further includes a vacuum pumping device communicated with the moving space 205 and an inert gas supply device communicated with the moving space 205.

[0094] During the etching process, before heating the insulation heating layer 201 to heat the workpiece to be processed, it is necessary to evacuate the moving space 205 through the vacuum pumping device to ensure that the moving space 205 is in a vacuum state. When the insulation heating layer 201 is heated, the heat is conducted upward. The vacuum degree of the moving space 205 isolates the heat from being transferred downward, greatly reducing the heat loss. The heating efficiency of the insulation heating layer 201 is high, and the required high temperature on the upper surface of the electrostatic chuck 2 can be reached in a relatively short time.

[0095] During the process of cooling the electrostatic chuck 2 in a high-temperature state, the driving member 208 drives the heat transfer layer 206 to rise until the upper surface contacts the bottom of the insulation heating layer 201. At the same time, the vacuum pumping action of the vacuum pumping device on the moving space 205 is stopped, and the inert gas supply device is changed to be conducted, and an inert gas, such as helium, is introduced into the moving space 205, so that the inert gas fills the moving space 205. The low temperature on the heat transfer layer 206 is transferred to the insulation heating layer 201 at a short distance, and the cooling efficiency is very high. At the same time, the filling of the inert gas also assists in providing a cooling transfer effect. The two cooperate with each other to realize the rapid cooling of the electrostatic chuck.

[0096] The vacuum pumping device in the present invention includes a vacuum pump and a vacuum pipeline extending into the moving space 205; the inert gas supply device includes a gas source and an inert gas pipeline extending into the moving space 205.

[0097] In order to facilitate the control of the vacuum pumping device and the inert gas supply device, in some embodiments, on both the vacuum pipeline and the inert gas pipeline, there are provided on-off valves for controlling the pipeline on and off.

[0098] Combined Figures 2 to 5 As shown, the insulating heating layer 201 in the present invention includes an insulating housing, an adsorption electrode 202, and a heating electrode 203. Among them, the material of the insulating housing includes but is not limited to alumina ceramic or aluminum nitride ceramic.

[0099] The above-mentioned heating electrode 203 is arranged inside the insulating housing and is used for heating the workpiece to be processed. The heating electrode 203 is connected to the power supply system outside the vacuum reaction chamber and is used to realize the heating and temperature rise of the electrostatic chuck 2.

[0100] The insulating heating layer 201 using electric heating can facilitate the control of the heating temperature. In the present invention, the heating method for realizing the insulating heating layer 201 includes but is not limited to electric heating, and can also be heat transfer heating.

[0101] The adsorption electrode 202 is arranged inside the insulating housing and is used for electrostatic adsorption of the workpiece to be processed. The adsorption electrode 202 is connected to the high-voltage power supply outside the vacuum reaction chamber and is used to realize the electrostatic adsorption function of the workpiece to be processed.

[0102] In some embodiments, the heating electrode 203 is located between the adsorption electrode 202 and the base 204. Compared with the adsorption electrode 202, the heating electrode 203 is arranged closer to the base 204. By adopting the above arrangement method, the stability of the adsorption force of the adsorption electrode 202 can be ensured, and the workpiece to be processed adsorbed electrostatically can be prevented from falling off.

[0103] Those skilled in the art can understand that the distances from the heating electrode 203 and the adsorption electrode 202 to the upper surface of the insulating housing can be set according to different needs and are all within the protection scope.

[0104] In addition, the present application also discloses a plasma etching system, including a base 3 and an electrostatic chuck 2 installed on the base 3. Among them, the electrostatic chuck 2 is the electrostatic chuck 2 disclosed in the above embodiments. Therefore, the plasma etching system having this electrostatic chuck 2 also has all the above technical effects and will not be elaborated one by one here.

[0105] In some embodiments, the base 204 of the electrostatic chuck 2 and the base 3 are connected by an elastic member 31. Optionally, the elastic member 31 is a rubber sealing ring.

[0106] The electrostatic chuck 2 is integrally mounted on the base 3 in the vacuum reaction chamber of the plasma etching system, and the two are sealed with a sealing ring.

[0107] Figure 2 and Figure 3 The bottom of the heat transfer layer 206 in [] passes through the base 204 and is connected to the driving member 208 at the bottom through the base 3.

[0108] Figure 4 and Figure 5 Both the coolant inlet channel and the coolant outlet channel of the coolant circulation system 207 in [] penetrate through the base 3 and are connected to the driving member 208 at the bottom.

[0109] In addition, the pipes of the evacuation device and the pipes of the inert gas supply device of the electrostatic chuck 2 both penetrate through the base 3.

[0110] The above discloses an arrangement method of the coolant inlet channel and the coolant outlet channel of the coolant circulation system 207, and an arrangement method of the pipes of the evacuation device and the pipes of the inert gas supply device. In some embodiments, the above structure may not penetrate through the base 3, but be arranged at other positions of the electrostatic chuck 2 and be within the protection scope.

[0111] As shown in the present invention and the claims, unless the context clearly indicates an exception, words such as "a", "an", "one" and / or "the" are not specifically singular and may also include the plural. Generally speaking, the terms "comprising" and "including" only indicate the inclusion of the clearly identified steps and elements, and these steps and elements do not constitute an exclusive list. The method or device may also include other steps or elements. An element defined by the statement "comprising one..." does not exclude the existence of another identical element in the process, method, commodity or device including the element.

[0112] The various embodiments in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments. The same or similar parts among the various embodiments can be referred to each other.

[0113] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be obvious to those skilled in the art. The general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to these embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An electrostatic chuck, characterized in that, Comprising: An insulating heating layer for heating a workpiece to be processed; A base connected to the insulating heating layer, and there is a sealed moving space between the insulating heating layer and the base; A cooling assembly, wherein the cooling assembly and / or the insulating heating layer can move within the moving space to adjust the distance between the cooling assembly and the insulating heating layer.

2. The electrostatic chuck according to claim 1, characterized in that, The insulating heating layer is fixedly connected to the base, and the cooling assembly can move along a first direction, which is the direction of the line connecting the insulating heating layer and the base.

3. The electrostatic chuck according to claim 2, characterized in that, The cooling assembly includes: A coolant circulation system for cooling the insulating heating layer; A heat transfer layer that can move along the first direction within the moving space and is used for heat exchange between the coolant circulation system and the insulating heating layer.

4. The electrostatic chuck according to claim 3, characterized in that, The coolant circulation system is arranged within the base; The coolant circulation system includes a coolant inlet channel and a coolant outlet channel that penetrate the base.

5. The electrostatic chuck according to claim 3, characterized in that, The heat transfer layer includes a plurality of heat conducting fins; The base has accommodation grooves for accommodating the heat conducting fins, and the accommodation grooves correspond to the heat conducting fins one by one; The insulating heating layer has fitting grooves for accommodating the heat transfer layer, and the fitting grooves correspond to the accommodation grooves one by one and are arranged opposite to form an accommodation space, and the heat conducting fins move within the accommodation space.

6. The electrostatic chuck according to claim 5, characterized in that, The heat conducting fins are annular fins and are concentrically arranged; Both the accommodation grooves and the fitting grooves are annular grooves and are concentrically arranged respectively.

7. The electrostatic chuck according to claim 5, characterized in that, It further includes a driving member for driving the heat transfer layer to move, All the heat conducting fins penetrate the base and are all connected to the driving member, and the driving member can drive the heat conducting fins to fit with the insulating heating layer.

8. The electrostatic chuck according to claim 3, characterized in that, The coolant circulation system is located within the heat transfer layer.

9. The electrostatic chuck according to claim 8, characterized in that, It further includes a driving member for driving the heat transfer layer to move, The coolant circulation system includes a coolant inlet channel and a coolant outlet channel that penetrate the base; the driving member can drive the heat transfer layer to fit with the insulating heating layer through the coolant inlet channel and the coolant outlet channel.

10. The electrostatic chuck according to claim 9, characterized in that, Drive columns are provided in both the coolant inlet channel and the coolant outlet channel. One end of the drive column is fixedly connected to the heat transfer layer, and the other side is connected to the driving member. The driving member drives the heat transfer layer to move through the drive column.

11. The electrostatic chuck according to claim 10, characterized in that, It further includes: A sealed bellows located within the moving space, and the sealed bellows are sleeved outside both the coolant inlet channel and the coolant outlet channel. The sealed bellows are telescopic, with one end sealedly connected to the heat transfer layer and the other end sealedly connected to the base.

12. The electrostatic chuck according to any one of claims 1 to 11, characterized in that, It further includes a vacuum pumping device communicated with the moving space and an inert gas supply device communicated with the moving space.

13. The electrostatic chuck according to any one of claims 1 to 11, characterized in that, The insulating heating layer includes: An insulating outer shell; Heating electrodes arranged inside the insulating outer shell and used for heating the workpiece to be processed; Adsorption electrodes arranged inside the insulating outer shell and used for electrostatic adsorption of the workpiece to be processed; The heating electrode is located between the adsorption electrode and the base.

14. A plasma etching system, comprising a base and an electrostatic chuck mounted on the base, wherein, The electrostatic chuck is the electrostatic chuck according to any one of claims 1 to 13.

15. The plasma etching system according to claim 14, wherein, The base of the electrostatic chuck is connected to the base through an elastic member.

16. The plasma etching system according to claim 14, wherein, Both the coolant inlet channel and the coolant outlet channel of the coolant circulation system of the electrostatic chuck penetrate through the base; Both the pipeline of the vacuum pumping device and the pipeline of the inert gas supply device of the electrostatic chuck penetrate through the base.

Images