High-order mode oscillator, antenna, communication equipment and vehicle

Abstract

A high-order mode oscillator, an antenna, a communication device and a vehicle, the high-order mode oscillator comprises a radiation arm arranged on a substrate, the radiation arm comprises a main feed oscillator, a parasitic oscillator and at least one parasitic conductor, and the parasitic oscillator is arranged at one end of the main feed oscillator along a first direction; the parasitic conductor is arranged at the edge of the substrate, the main feed oscillator and the parasitic oscillator partially coincide with the projection of the at least one parasitic conductor in the first direction and / or in the second direction perpendicular to the first direction, and the main feed oscillator and the parasitic oscillator can couple signals to the at least one parasitic conductor. By loading a parasitic oscillator and at least one parasitic conductor, the main feed oscillator and the parasitic oscillator couple signals to the parasitic conductor, so that superposition of different radiation modes is realized, broadband impedance matching and E-plane directional diagram three-splitting characteristics are realized, and a high-order mode oscillator VSWRlt is realized; 2.0, BWgt in the frequency band of 5.763 to 7.0 GHz; the bandwidth is obviously widened, and engineering application is completely met.

Description

Technical Field

[0001] The present disclosure relates to the field of communication technologies, and in particular, to a high-order mode oscillator, an antenna, a communication device, and a vehicle. Background Art

[0002] An omnidirectional antenna is one of the most commonly used antenna types in the field of wireless communication. An omnidirectional antenna refers to an antenna with maximum radiation in the horizontal direction and a uniform azimuth plane. In related technologies, by utilizing the high-order mode splitting characteristics that have not been utilized by dipoles, an inclined reflector is provided at the end of the axial direction of the oscillator. The inclined reflector reflects the beam of the side lobe pointing in the high elevation angle direction towards the horizontal direction, and then in-phase superimposes with the middle lobe in the horizontal direction, thereby forming a high-gain omnidirectional beam in the horizontal plane. However, in related technologies, a conventional symmetric oscillator is used, and the bandwidth is narrow, making it impossible to achieve engineering applications. Summary of the Invention

[0003] The purpose of the present disclosure is to provide a high-order mode oscillator, an antenna, a communication device, and a vehicle to solve problems such as narrow bandwidth of a conventional oscillator.

[0004] To achieve the above purpose, the present disclosure provides a high-order mode oscillator, including a radiation arm for being arranged on a substrate, wherein the radiation arm includes: A main feeding oscillator, A parasitic oscillator arranged at one end of the main feeding oscillator along a first direction; and At least one parasitic conductor arranged at the edge of the substrate, and the projections of the main feeding oscillator and the parasitic oscillator on the at least one parasitic conductor partially coincide in the first direction and / or in a second direction perpendicular to the first direction, and the main feeding oscillator and the parasitic oscillator can couple signals to the at least one parasitic conductor.

[0005] Optionally, two symmetric radiation arms are arranged on a first surface of the substrate, and a feeding gap is left between the main feeding oscillators of the two radiation arms.

[0006] Optionally, the radiation arms are respectively arranged on the opposite first surface and second surface of the substrate, a plurality of vias are arranged on the outer periphery of the radiation arms, and the radiation arms on the first surface and the second surface are fixed by a connecting member passing through the vias.

[0007] Optionally, the at least one parasitic conductor is symmetrically arranged on two edges in the second direction of the substrate.

[0008] Optionally, the electrical length L1 of the main feeding oscillator = (0.60 - 0.75)·λc, and the electrical length L2 of the parasitic oscillator = (2.80 - 3.60)·λc, where λc is the wavelength in a vacuum at the center frequency f c In a vacuum.

[0009] Optionally, the electrical length L of the high-order mode oscillator is (3.03 to 3.6)·λc, where λc is the wavelength in vacuum at the center frequency f c in vacuum.

[0010] Optionally, the main feeding oscillator is of an isosceles trapezoid structure, and the upper base and the lower base of the isosceles trapezoid structure are arranged along a first direction.

[0011] Optionally, the parasitic oscillator is provided with a first inner groove and a second inner groove which are arranged at intervals along the first direction.

[0012] Optionally, the first inner groove and the second inner groove are respectively arranged on two opposite edges of the parasitic oscillator in a second direction.

[0013] Optionally, the interval distance d between the first inner groove and the second inner groove is (0.45 to 0.65)·λ c , where λc is the wavelength in vacuum at the center frequency f c in vacuum.

[0014] Optionally, the radiation arm includes a first parasitic conductor, and the first parasitic conductor is arranged on a side of the main feeding oscillator away from the parasitic oscillator.

[0015] Optionally, the first parasitic conductor is an isosceles triangle with the base parallel to the substrate.

[0016] Optionally, the electrical length of the first parasitic conductor is L3 = (0.15 to 0.20)·λc, where λc is the wavelength in vacuum at the center frequency f c in vacuum.

[0017] Optionally, the radiation arm includes a second parasitic conductor, and the second parasitic conductor has two first edge portions arranged in parallel and a connecting portion connecting the two first edge portions, and the connecting portion is located between the main feeding oscillator and the parasitic oscillator.

[0018] Optionally, the first edge portion has a first side edge and a second side edge, the first side edge partially coincides with the projection of the main feeding oscillator in a second direction, and the second side edge partially coincides with the projection of the parasitic oscillator in the second direction.

[0019] Optionally, the radiation arm includes a third parasitic conductor, and the third parasitic conductor has a second edge portion and a protruding portion arranged at the middle position of the second edge portion, the protruding portion extends into the second inner groove of the parasitic oscillator, and the end of the second edge portion extends to the position of the first inner groove.

[0020] Optionally, the second edge portion partially coincides with the projection of the parasitic oscillator in a second direction.

[0021] Optionally, the high-order mode oscillator further includes a conductive cavity sleeved on the outer periphery of the substrate, and the length of the conductive cavity in the first direction at least covers the main feeding oscillator.

[0022] Optionally, there are two conductive cavities arranged at intervals in the first direction, and the two conductive cavities are symmetrically arranged on both sides of the feeding gap.

[0023] Optionally, the conductive cavity includes a first conductive semi-cavity and a second conductive semi-cavity, wherein, the first side of the first conductive semi-cavity is connected to at least one of the second parasitic conductor and the third parasitic conductor on the first surface of the substrate, and the second side is arranged at an interval from the first surface of the substrate; the second side of the second conductive semi-cavity is connected to at least one of the second parasitic conductor and the third parasitic conductor on the second surface of the substrate, and the first side is arranged at an interval from the second surface of the substrate; wherein, the first side and the second side are arranged oppositely.

[0024] Optionally, a notch for avoiding the first parasitic conductor is provided on the first side of the first conductive semi-cavity and / or the second side of the second conductive semi-cavity.

[0025] Optionally, the size of the high-order mode oscillator in the first direction is L, and the size in the second direction is W, wherein, L / W is between 8.4 and 8.6.

[0026] Optionally, the VSWR of the high-order mode oscillator is <2.0, and the BW is >19.40% in the frequency band of 5.763 - 7.0 GHz.

[0027] According to a second aspect of the present disclosure, an antenna is provided, including a substrate and the above-mentioned high-order mode oscillator.

[0028] Optionally, the antenna further includes a first reflecting surface provided at the upper end of the high-order mode oscillator and a second reflecting surface provided at the lower end, the first reflecting surface and the second reflecting surface are symmetrically arranged, and the generatrixes of both are partial parabolas.

[0029] Optionally, the curved surfaces of the first reflecting surface and the second reflecting surface satisfy the following equation:

[0030] wherein, is the azimuth angle of any point on the curved surface, 0°≤ ≤2π, ρ is the radial radius of any point on the curved surface, 1≤ ≤ .

[0031] Optionally, the partial parabola satisfies the following equation:

[0032] where is the azimuth angle of any point on the surface, 0° ≤ ≤ 2π, r is the radial radius of any point on the surface, 1 ≤ ≤ .

[0033] According to a third aspect of the present disclosure, a communication device is provided, including the antenna described above.

[0034] According to a fourth aspect of the present disclosure, a vehicle is provided, including the antenna described above.

[0035] Through the above technical solutions, in the high-order mode oscillator provided by the present disclosure, a parasitic oscillator and at least one parasitic conductor are loaded. The main feed oscillator and the parasitic oscillator can couple signals to at least one parasitic conductor. By designing the main feed oscillator, the parasitic oscillator, the parasitic conductor, etc., the superposition and combination of different radiation modes are realized, so as to achieve broadband impedance matching and E-plane direction Figure 3 splitting characteristics. The VSWR of this high-order mode oscillator is < 2.0, and the BW is > 19.40% in the frequency band of 5.763 - 7.0 GHz. The bandwidth is significantly broadened, fully meeting the engineering applications.

[0036] Other features and advantages of the present disclosure will be described in detail in the subsequent specific implementation section. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] The drawings are used to provide a further understanding of the present disclosure, and constitute a part of the specification. They are used together with the following specific implementation to explain the present disclosure, but do not constitute a limitation to the present disclosure. In the drawings: Figure 1 is the vertical plane pattern of a symmetric oscillator in each radiation mode provided by a related embodiment.

[0038] Figure 2 is a schematic diagram of a Smith chart provided by a related embodiment.

[0039] Figure 3 is a schematic diagram of an antenna provided by a related embodiment.

[0040] Figure 4 is a schematic structural diagram of an oscillator provided by a related embodiment.

[0041] Figure 5 is a schematic diagram of various bus forms of a conical reflector provided by a related embodiment.

[0042] Figure 6a and Figure 6b is a schematic diagram of another antenna provided by the related embodiment.

[0043] Figure 7 is a schematic diagram of a peak directivity Dp provided by the related embodiment.

[0044] Figure 8 is a radiation pattern of fL = 5.45 GHz provided by the related embodiment.

[0045] Figure 9 is a radiation pattern of fC = 6.05 GHz provided by the related embodiment.

[0046] Figure 10 is a radiation pattern of fH = 6.50 GHz provided by the related embodiment.

[0047] Figure 11 is a schematic diagram of the E-plane half-power beamwidth of a radiation pattern provided by the related embodiment.

[0048] Figure 12 is a front view of a higher-order mode oscillator provided by an embodiment of the present disclosure.

[0049] Figure 13 is a structural schematic diagram of a higher-order mode oscillator provided by an embodiment of the present disclosure.

[0050] Figure 14 is a front view of the main feeding oscillator and the first parasitic conductor in a higher-order mode oscillator provided by an embodiment of the present disclosure.

[0051] Figure 15 is a front view of the parasitic oscillator in a higher-order mode oscillator provided by an embodiment of the present disclosure.

[0052] Figure 16 is a front view of the second parasitic conductor in a higher-order mode oscillator provided by an embodiment of the present disclosure.

[0053] Figure 17 is a front view of the third parasitic conductor in a higher-order mode oscillator provided by an embodiment of the present disclosure.

[0054] Figure 18 is a front view of the second parasitic conductor and the third parasitic conductor in a higher-order mode oscillator provided by an embodiment of the present disclosure.

[0055] Figure 19 is a front view of a higher-order mode oscillator provided by an embodiment of the present disclosure.

[0056] Figure 20 is a partial enlarged view of a higher-order mode oscillator provided by an embodiment of the present disclosure.

[0057] Figure 21 It is a schematic structural diagram of a conductive cavity in a high-order mode oscillator provided by an embodiment of the present disclosure.

[0058] Figure 22 It is a side view of a conductive cavity in a high-order mode oscillator provided by an embodiment of the present disclosure.

[0059] Figure 23 It is a partial enlarged view of a conductive cavity in a high-order mode oscillator provided by an embodiment of the present disclosure.

[0060] Figure 24 It is a partial enlarged view of a high-order mode oscillator provided by an embodiment of the present disclosure.

[0061] Figure 25 and Figure 26 It is a schematic structural diagram of an antenna provided by an embodiment of the present disclosure.

[0062] Figure 27 It is a Smith chart of the high-order mode oscillator and its high-gain antenna of the present disclosure.

[0063] Figure 28 It is a schematic diagram of the voltage standing wave ratio VSWR of the high-order mode oscillator and its high-gain antenna of the present disclosure.

[0064] Figure 29 It is a schematic diagram of the peak directivity Dp of the high-order mode oscillator and its high-gain antenna of the present disclosure.

[0065] Figure 30 It is the high-order mode oscillator and its high-gain antenna of the present disclosure at f L = 5.80 GHz actual gain pattern.

[0066] Figure 31 It is the high-order mode oscillator and its high-gain antenna of the present disclosure at f C = 6.50 GHz actual gain pattern.

[0067] Figure 32 It is the high-order mode oscillator and its high-gain antenna of the present disclosure at f H = 7.0 GHz actual gain pattern.

[0068] Figure 33 It is a schematic diagram of the E-plane (vertical plane) half-power beamwidth HPBW of a high-gain antenna composed of the high-order mode oscillator of the present disclosure.

[0069] Figure 34 It is a schematic diagram of the H-plane (horizontal plane) non-circularity of a high-gain antenna composed of the high-order mode oscillator of the present disclosure.

[0070] Description of reference numerals 100 - High - order mode oscillator; 1 - Substrate; 2 - Radiation arm; 20 - Via hole; 200 - Feeding gap; 21 - Main feeding oscillator; 22 - Parasitic oscillator; 221 - First inner groove; 222 - Second inner groove; 23 - Parasitic conductor; 231 - First parasitic conductor; 232 - Second parasitic conductor; 2321 - First edge part; 2322 - Connection part; 23211 - First side edge; 23212 - Second side edge; 233 - Third parasitic conductor; 2331 - Second edge part; 2332 - Protrusion; 3 - Conductive cavity; 300 - Notch; 301 - First side; 302 - Second side; 31 - First conductive half - cavity; 32 - Second conductive half - cavity; 401 - First reflecting surface; 402 - Second reflecting surface; 5 - Connecting piece. Detailed implementation manners

[0071] The following will describe in detail the specific implementation manners of the present disclosure with reference to the accompanying drawings. It should be understood that the specific implementation manners described herein are only used to illustrate and explain the present disclosure, and are not used to limit the present disclosure.

[0072] In the present disclosure, unless otherwise stated, the orientation terms such as "upper, lower, left, right" usually refer to the directions defined by the drawing planes of the corresponding drawings, and "inner, outer" refer to the inside and outside of the contours of the corresponding components. In addition, when the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The terms "first", "second", etc. used in the present disclosure are used to distinguish one element from another, and do not have sequentiality and importance.

[0073] To better understand the technical solution of the present application, first, the beam characteristics under different radiation models of the dipole are analyzed, and the existing methods for improving directivity and the problems existing in the related embodiments are introduced.

[0074] The dipole can be divided into short dipole (L << 0.1·λ), half - wave dipole (L ≈ 0.5·λ), full - wave dipole (L ≈ 1.0·λ), 1.25 - wavelength dipole (L ≈ 1.25·λ), 1.50 - wavelength dipole (L ≈ 1.50·λ), two - wavelength dipole (L ≈ 2.0·λ), 2.5 - wavelength dipole (L ≈ 2.56·λ), three - wavelength dipole (L ≈ 3.0·λ) and 3.5 - wavelength dipole (L ≈ 3.67·λ) according to the ratio of the physical length L to the operating wavelength λ, that is, the electrical length (or electrical size), a total of 9 radiation modes.

[0075] As Figure 1 shown, Figure 1 is the vertical plane pattern of a dipole in each radiation mode provided by a related embodiment, where HPBW refers to the half - power beamwidth (i.e., Half - Power Beamwidth). According to Figure 1As can be seen from (a) to (c) in the figure, when the electrical size L of the dipole is ≤ 1.0·λ, the radiation pattern is omnidirectional in the horizontal plane, and the vertical plane (E-plane) presents an ideal "∞" shape, that is, the main lobe does not split and the maximum radiation points to the horizontal direction (Theta = 90°). As the electrical size increases, the E-plane beamwidth gradually narrows and the directivity improves. When the electrical size L = 1.25·λ, a small side lobe appears at 60° from the main lobe in the E-plane radiation pattern, and the directivity reaches the maximum at this time, that is, D = 5.62 dBi; when the electrical size L continues to increase, the radiation pattern in the vertical plane (E-plane) begins to split into multiple lobes (two or more lobes). For example, when L = 1.25·λ, the E-plane splits into three lobes (i.e., the horizontal main lobe + upper and lower grating lobes, and the zero points between the main lobe and the grating lobes are relatively shallow); when L = 2.0·λ, the E-plane splits into upper and lower two lobes, and there is a deep zero point in the horizontal direction; when L = 3.03·λ, the E-plane splits into three lobes, the amplitude of the horizontal main lobe is smaller than that of the upper and lower grating lobes, and there is a deeper zero point between the main lobe and the grating lobes. This high-order mode with the E-plane splitting is useless compared with the low-order mode with a single main lobe, so it has not been applied so far.

[0076] Furthermore, the impedance characteristics of the symmetrical dipole are analyzed. As Figure 2 shown, Figure 2 is a schematic diagram of a Smith chart provided by a related embodiment. It can be seen that when the dipole is short (f1 = 0.1 GHz, L << 0.1·λ), the real part of the impedance is very small, the imaginary part is a high capacitive reactance, and the matching is difficult; when the dipole is a half-wave dipole (f2 = 0.9 GHz, L ≈ 0.5·λ), the real part of the impedance is close to 50Ω, the imaginary part is close to 0Ω, and the matching is easy; when the dipole is a full-wave dipole (f3 = 1.8 GHz, L ≈ 1.0·λ), the real part of the impedance is close to 350Ω, the imaginary part is a high capacitive reactance up to -400Ω, and the matching is difficult; when the dipole is a 1.25-fold wavelength dipole (f4 = 2.25 GHz, L ≈ 1.25·λ), the real part of the impedance is close to 89Ω, the imaginary part is a high capacitive reactance up to -235Ω, and the matching is difficult; when the dipole is a 1.50-fold wavelength dipole (f5 = 2.70 GHz, L ≈ 1.50·λ), the real part of the impedance is close to 65Ω, the imaginary part is -67.5Ω, and the matching is relatively easy; when the dipole is a two-fold wavelength dipole (f6 = 3.60 GHz, L ≈ 2.0·λ), the real part of the impedance is close to 273Ω, the imaginary part is a high capacitive reactance up to -201Ω, and the matching is difficult; when the dipole is a two-fold wavelength dipole (f6 = 3.60 GHz, L ≈ 2.0·λ), the real part of the impedance is close to 273Ω, the imaginary part is a high capacitive reactance up to -201Ω, and the matching is difficult; when the dipole is a three-fold wavelength dipole (f7 = 5.45 GHz, L ≈ 3.03·λ), the real part of the impedance is close to 215Ω, the imaginary part is a high capacitive reactance up to -124Ω, and the matching is difficult; when the dipole is a (3.30~3.60)-fold wavelength dipole (f7 / f8 = 6.05 / 6.50 GHz, L ≈ 3.03 / 3.61·λ), the real part of the impedance is close to 95 / 70Ω, the imaginary part is a high capacitive reactance up to -130 / -61Ω, and the matching is relatively easy, and the possibility of engineering application is relatively large.

[0077] At present, only two radiation modes, namely short dipole and half-wave dipole, have been applied in engineering. Among them, the short dipole has an electrically small size, a small real part of impedance, a large capacitive reactance of the imaginary part, a narrow bandwidth, low directivity, and low efficiency. It is usually used as a receiving antenna. For example, the tire pressure monitoring TMPS antenna, the car key antenna, etc. The impedance of the half-wave dipole is a pure real number (Zin≈73.1Ω), with a wide bandwidth and relatively high directivity (D≈2.15dBi). Due to its excellent characteristics, the half-wave dipole has been widely used, such as base station antennas, WLAN antennas, etc. The full-wave dipole (D≈3.84 dBi) and the 1.25-wavelength dipole (D≈5.62 dBi) have higher directivity, but their real and imaginary parts of impedance are large, difficult to match, and difficult to apply. The above four radiation modes (low-order modes) have high engineering application value due to their ideal horizontal omnidirectional pattern. In contrast, the latter five radiation modes are all high-order modes, whose electrical size far exceeds 1 wavelength, and multiple half-wavelength currents will alternate in the opposite direction, resulting in the E-plane pattern splitting into multiple lobes, so their practicality is not great. Therefore, there has been no research on high-order modes so far.

[0078] Due to the horizontal 360° radiation, the directivity of the symmetric dipole omnidirectional antenna is usually low. For example, the directivity of the half-wave dipole is only 2.15dBi. Low directivity will result in a small signal coverage area, a low signal-to-noise ratio, and poor communication quality. To improve the directivity, there are four theoretical methods as follows: 1) Increase the electrical scale of a single unit, that is, increase the radiation aperture by increasing the electrical length of the low-order mode single dipole to achieve high-gain omnidirectionality. For example, growing from a half-wave dipole (L = 0.5·λ, D = 2.15 dBi) to a full-wave dipole (L = 1.0·λ, D = 3.84 dBi), a 1.25-wavelength dipole (L = 1.25·λ, D = 5.62 dBi). This method has a significant but limited effect on improving the directivity and still cannot meet the actual needs.

[0079] 2) Increase the total effective radiation aperture, that is, coaxial array multiple units. This method realizes high-gain omnidirectionality by coaxial arraying multiple low-order mode dipoles to increase the radiation aperture. For example, arraying short dipoles / half-wave dipoles / full-wave dipoles / 1.25-wavelength dipoles. This method is the most commonly used but has obvious defects. That is, when omnidirectional units are arrayed along the vertical direction, the more the number of array elements, the narrower the vertical plane wave width and the higher the directivity. However, as the number of array elements increases and the feeder length becomes longer, the dispersion effect is strong, the loss increases greatly, the current distribution of the array elements is inconsistent, and the bandwidth, especially the pattern bandwidth, will be significantly narrowed. At the same time, arraying will cause the antenna height to increase and the appearance to be more prominent.

[0080] 3) Set up an EBG (Electromagnetic Band Gap) cavity to make the surface currents of the cavity in the same direction, increasing the effective radiation aperture, thereby achieving high directivity. This method arranges a single or multiple low-order mode oscillators coaxially with a large spacing, and then coaxially sets a cylindrical EBG cavity around the oscillators. The vertical plane wavewidth of the source oscillator is very wide and can irradiate the entire surface of the EBG cavity, on the periodic metal sheets of the EBG cavity. This method is only suitable for the first 4 low-order modes, that is, the radiation pattern has only one main lobe and faces the horizontal direction, and is not suitable for the high-order modes with three cracks in the E plane.

[0081] 4) Set up a reflector to reflect electromagnetic waves in the horizontal direction, compressing the vertical plane wavewidth, thereby achieving high directivity. Existing high-directivity methods for setting up reflectors are all proposed for low-order modes, and the gain effect is limited.

[0082] In summary, the existing solutions can generally be divided into two categories. One is the omnidirectional oscillator unit with a larger electrical size, and the other is the high-gain omnidirectional array antenna composed of multiple symmetric oscillators. Although these two methods can achieve gain to a certain extent, they still cannot fundamentally overcome the problems of omnidirectional array antennas. Therefore, it is very necessary to explore other solutions to achieve high gain for omnidirectional antennas.

[0083] To overcome the limitations of related technologies, related embodiments of the present disclosure provide an omnidirectional antenna. This method is different from the related technology that uses the vertical plane radiation pattern of the low-order mode of the oscillator with a single main lobe facing the horizontal direction and forms a horizontally high-gain omnidirectional solution by increasing the effective radiation aperture. Instead, it uses the splitting characteristics of the high-order modes (for example, L=(3.03~3.61)·λ) of the dipole that have not been utilized, and sets an inclined reflector at one end of the axial direction of the oscillator. The inclined reflector reflects the beam of the side lobe pointing to the high elevation angle direction towards the horizontal direction, and then combines in phase with the middle lobe in the horizontal direction, thereby forming a high-gain omnidirectional beam on the horizontal plane, and the gain can exceed 13 dBi. Moreover, since the reflected wave radiates horizontally outwards and hardly reflects back to the source antenna, the input impedance of the source antenna is not affected. This method is unique and ingenious, turning the useless high-order modes into very useful high-gain omnidirectional radiation, further enriching the form of the oscillator and expanding its application potential.

[0084] In related embodiments, referring to Figure 3 as shown, the omnidirectional antenna includes: an oscillator, a first reflector located at the upper end of the oscillator, and a second reflector located at the lower end of the oscillator, where: The vertical plane radiation pattern of the oscillator includes: a main lobe pointing to the horizontal direction, a lower side lobe pointing to the high elevation angle direction, and an upper side lobe pointing to the high elevation angle direction. The high elevation angle direction represents the direction deviating from the horizontal direction; The first reflecting surface is used to reflect the beam of the upper side lobe towards the horizontal direction, and the second reflecting surface is used to reflect the beam of the lower side lobe towards the horizontal direction. The beams of the side lobes reflected by the reflecting surface are in-phase superimposed with the beams of the lobes pointing in the horizontal direction to form a horizontally highly directional omnidirectional beam.

[0085] In this embodiment, the useless high-order modes (i.e., the side lobes pointing in the high elevation angle direction) that split the vertical plane through the reflecting surface are reflected towards the horizontal direction, that is, the included angle between the incident wave and the reflected wave is an obtuse angle, and the reflected wave will not be reflected back to the oscillator to affect its impedance; the beams of the side lobes reflected by the reflecting surface are in-phase superimposed with the beams of the lobes pointing in the horizontal direction to achieve high gain omnidirectionality in the horizontal direction. Since this omnidirectional antenna turns the useless high-order modes into very useful high-gain omnidirectional radiation, it further enriches the form of the oscillator and expands its application potential.

[0086] Regarding the reflecting surface, in related embodiments, such as Figure 5 shown Figure 5 is a schematic diagram of various generatrix forms of a conical reflecting surface provided by a related embodiment. The generatrix of the conical reflecting surface is any one of the following: a straight line, a multi-segment broken line, and a curve.

[0087] Based on the above embodiments, this method can increase the gain of the symmetric oscillator to more than 13 dBi. The idea is ingenious and novel, but there are still the following deficiencies in actual use, that is, due to the use of a conventional symmetric oscillator, it is difficult to match the high-order mode L=(3.03~3.6)·λ and the bandwidth is narrow; the longitudinal profile of the conical reflecting surface is not optimal, resulting in a low gain. In view of the above two defects, the present disclosure provides a broadband matchable high-order mode oscillator, and it is found that the omnidirectional gain is higher when the longitudinal profile is a parabola. The following will be introduced in detail in two aspects.

[0088] According to the first aspect of the present disclosure, as Figures 12 to 20 shown, a high-order mode oscillator is provided. The high-order mode oscillator includes a radiation arm 2 for being arranged on a substrate 1. Among them, the radiation arm 2 includes a main feeding oscillator 21, a parasitic oscillator 22, and at least one parasitic conductor 23. The parasitic oscillator 22 is arranged at one end of the main feeding oscillator 21 along a first direction; at least one parasitic conductor 23 is arranged at the edge of the substrate 1. The main feeding oscillator 21 and the parasitic oscillator 22 partially overlap with at least one parasitic conductor 23 in the first direction and / or in a second direction perpendicular to the first direction. The main feeding oscillator 21 and the parasitic oscillator 22 can couple signals to the parasitic oscillator 22 and at least one parasitic conductor 23.

[0089] Here, it should be noted that the first direction can be the length direction of the substrate 1, such as Figure 12 shown as the left-right direction, and the second direction can be the width direction of the substrate 1, such as Figure 12In the vertical direction shown, the number and position of the parasitic conductors 23 can be adjusted and designed as needed. Taking the first parasitic conductor 231 as an example, as Figure 14 shown, the projected parts of the first parasitic conductor 231 and the main feeding oscillator 21 coincide in both the first direction and the second direction.

[0090] In the high-order mode oscillator provided by the present disclosure, a parasitic oscillator 22 and at least one parasitic conductor 23 are loaded. The main feeding oscillator 21 and the parasitic oscillator 22 can couple signals to at least one parasitic conductor 23. By designing the main feeding oscillator 21, the parasitic oscillator 22, the parasitic conductor 23, etc., the superposition and combination of different radiation modes are realized, so as to achieve broadband impedance matching and E-plane direction Figure 3 splitting characteristics. The VSWR of this high-order mode oscillator is <2.0, and the BW>19.40% in the frequency band of 5.763~7.0 GHz. The bandwidth is significantly broadened, fully meeting the engineering applications.

[0091] The high-order mode oscillator provided by the present disclosure is a symmetrical oscillator. Two symmetrical radiation arms 2 are provided on the first surface of the substrate 1, and a feeding gap 200 is left between the main feeding oscillators 21 of the two radiation arms 2. The radiation arms 2 on the left and right sides are symmetrically arranged, and the structures in each radiation arm 2 are the same. Only the specific structure of one side of the radiation arm 2 will be introduced below.

[0092] As Figure 13 、 Figure 23 and Figure 24 shown, radiation arms 2 are respectively provided on the opposite first surface and second surface of the substrate 1. A plurality of vias 20 are provided on the outer periphery of the radiation arm 2. The radiation arms 2 on the first surface and the second surface are fixed by a connecting member 5 passing through the vias 20. The radiation arms 2 on the front and back surfaces of the substrate 1 are symmetrically arranged, and the radiation arms 2 on both surfaces are connected into one body through metallized vias, which can play a role in strengthening the bandwidth.

[0093] At least one parasitic conductor 23 is symmetrically arranged at two edges of the substrate 1 in the second direction. Exemplarily, as Figure 14 shown, there are two first parasitic conductors 231, which are symmetrically arranged in the vertical direction; as Figure 16 shown, the second parasitic conductor 232 is designed to have a vertically symmetric structure; as Figure 17 shown, there are also two third parasitic conductors 233, which are symmetrically arranged with respect to the vertical direction, and can radiate the signals of the main feeding oscillator 21 and the parasitic oscillator 22 to both sides at the same time, realizing a symmetrical design.

[0094] In the present disclosure, by designing the lengths of the main feeding oscillator 21 and the parasitic oscillator 22 in the first direction, the electrical length after their superposition can basically reach (3.03 - 3.6)·λc. Together with a plurality of parasitic conductors 23 located at the edges, it can ensure that the electrical length of the high-order mode oscillator is stably operating in the mode of (3.03 - 3.6)·λc.

[0095] The main feeding oscillator 21 can be of any suitable structure. In this embodiment, the electrical length L1 of the main feeding oscillator 21 = (0.60 - 0.75)·λc, where λc is the wavelength of the center frequency fc in vacuum. The electrical size of the main feeding oscillator 21 exceeds half a wavelength and can have the characteristics of a half-wave oscillator, such as Figure 14 As shown, the main feeding oscillator 21 can be an isosceles trapezoidal structure. The upper base and the lower base of the isosceles trapezoidal structure are arranged along the first direction. The position of the upper base can be connected to the feeding structure, and the position of the lower base is close to the parasitic oscillator 22. Specifically, the shape and electrical length of the main feeding oscillator 21 can be designed according to needs.

[0096] The parasitic oscillator 22 can be of any suitable structure. In this embodiment, as Figure 15 shown, the parasitic oscillator 22 is provided with a first inner groove 221 and a second inner groove 222 arranged at intervals along the first direction. For a symmetric design, the first inner groove 221 and the second inner groove 222 are respectively provided on the opposite two edges in the second direction of the parasitic oscillator 22. The interval distance d between the first inner groove 221 and the second inner groove 222 = (0.45 - 0.65)·λc, where λc is the wavelength of the center frequency fc in vacuum. The parasitic oscillator 22 operates in the mode of L == (1.0 - 1.5)·λc, and the total electrical length L2 = (2.80 - 3.60)·λc, which is greater than the standard mode L = (3.03 - 3.61)·λc, and there are two pairs of left-right symmetric first inner grooves 221 and second inner grooves 222.

[0097] The radiation arm 2 includes a first parasitic conductor 231, and the first parasitic conductor 231 can be of any suitable structure. In the present disclosure, as Figure 14 shown, the first parasitic conductor 231 is provided on the side of the main feeding oscillator 21 away from the parasitic oscillator 22. The first parasitic conductors 231 can be symmetrically arranged up and down between two main feeding oscillators 21, and there is a gap between the first parasitic conductor 231 and the main feeding oscillator 21. The electrical length of the first parasitic conductor 231 is L3 = (0.15 - 0.20)·λc, where λc is the wavelength of the center frequency fc in vacuum. Exemplarily, the first parasitic conductor 231 can be an isosceles triangle with the base parallel to the substrate 1, and it can be designed according to needs specifically.

[0098] The radiation arm 2 includes a second parasitic conductor 232, and the second parasitic conductor 232 can be of any suitable structure. In the present disclosure, asFigure 17 As shown, the second parasitic conductor 232 has two first edge portions 2321 arranged in parallel and a connecting portion 2322 connecting the two first edge portions 2321. As Figure 19 and Figure 20 shown, the connecting portion 2322 is located between the main feeding oscillator 21 and the parasitic oscillator 22. The main feeding oscillator 21 can couple a signal to the connecting portion 2322, and then radiate the signal to the second parasitic conductor 232. The main feeding oscillator 21 can also couple the signal to the parasitic oscillator 22 through the connecting portion 2322, so as to realize the superposition and combination of different radiation modes.

[0099] The first edge portion 2321 has a first side edge 23211 and a second side edge 23212. The first side edge 23211 partially coincides with the projection of the main feeding oscillator 21 in the second direction, and the second side edge 23212 partially coincides with the projection of the parasitic oscillator 22 in the second direction. The main feeding oscillator 21 can also couple a signal to the first side edge 23211 in the second direction, and the parasitic oscillator 22 can further couple the signal to the second side edge 23212, so as to realize the superposition of different radiation signals. The lengths of the first side edge 23211 and the second side edge 23212 can be the same to achieve a left-right symmetric design.

[0100] The radiation arm 2 includes a third parasitic conductor 233, and the third parasitic conductor 233 can be of any suitable structure. In the present disclosure, as Figure 17 shown, the third parasitic conductor 233 has a second edge portion 2331 and a protruding portion 2332 provided at the middle position of the second edge portion 2331. The protruding portion 2332 can extend into one of the inner grooves of the parasitic oscillator 22. As Figure 20 shown, the protruding portion 2332 extends into the second inner groove 222, and the end of the second edge portion 2331 extends to the position of the first inner groove 221. In this way, the second edge portion 2331 coincides with the projection of the parasitic oscillator 22 in the second direction. The parasitic oscillator 22 can further couple a signal to the second edge portion 2331, so as to radiate the signal outward through the third parasitic conductor 233. In other embodiments, by designing the lengths of the second edge portion 2331 and the parasitic oscillator 22 in the first direction, their projections in the second direction can partially coincide, and the signal of the parasitic oscillator 22 can also be coupled to the second edge portion 2331. The structures of the second parasitic conductor 232 and the third parasitic conductor 233 are similar. The former is connected at the middle of the first edge portion 2321, while the latter is not connected.

[0101] Furthermore, the high-order mode oscillator further includes a conductive cavity 3 sleeved on the outer periphery of the substrate 1. The length of the conductive cavity 3 in the first direction at least covers the main feeding oscillator 21. Without increasing the width of the high-order mode oscillator, the parasitic conductor at the edge can be extended, better radiating the signal outward without occupying additional space. The conductive cavity 3 can be a cylindrical cavity. In the case of having the current length of the parasitic conductor 23 with the maximum curved surface extended edge, it will not affect the overall width of the high-order mode oscillator and reduce the occupied space.

[0102] Exemplarily, as Figure 19 shown, there can be two conductive cavities 3 arranged at intervals in the first direction. The two conductive cavities 3 are symmetrically arranged on both sides of the feeding gap 200, and can radiate the signals of the main feeding oscillators 21 on both sides outward respectively.

[0103] As Figure 21 and Figure 22 shown, the conductive cavity 3 includes a first conductive half-cavity 31 and a second conductive half-cavity 32. Among them, the first side 301 of the first conductive half-cavity 31 is connected to the second parasitic conductor 232 and the third parasitic conductor 233 on the first surface of the substrate 1, and the second side 302 is arranged at intervals with the first surface of the substrate 1; the second side 302 of the second conductive half-cavity 32 is connected to the second parasitic conductor 232 and the third parasitic conductor 233 on the second surface of the substrate 1, and the first side 301 is arranged at intervals with the second surface of the substrate 1. The first side 301 and the second side 302 are arranged oppositely, which can avoid the occurrence of short circuit and at the same time extend the current of the second parasitic conductor 232 and the third parasitic conductor 233.

[0104] As Figure 21 and Figure 23 shown, a notch 300 for avoiding the first parasitic conductor 231 is provided on the first side 301 of the first conductive half-cavity 31 and / or the second side 302 of the second conductive half-cavity 32. The notch 300 is used to avoid the first parasitic conductor 231, prevent affecting the outward radiation of the signal of the first parasitic conductor 231, and at the same time can separate the conductive cavity 3 from the first parasitic conductor 231. As Figure 21 shown, the notches 300 of the first conductive half-cavity 31 and the second conductive half-cavity 32 are arranged oppositely to separately separate the two first parasitic conductors 231.

[0105] In the present disclosure, the size of the high-order mode oscillator in the first direction is L, and the size in the second direction is W, where L / W is between 8.4 and 8.6, approximately 8.5, so as to achieve a balance between bandwidth and non-circularity. Specifically, the aspect ratio of the high-order mode oscillator can be designed according to needs. Here, L and W refer to the effective electrical lengths of the high-order mode oscillator itself in the corresponding directions. The length and width of the substrate 1 can be designed according to the aspect ratio of the high-order mode oscillator, or can be larger than the length and width of the high-order mode oscillator. The present disclosure does not limit this.

[0106] In the high-order mode oscillator of the present disclosure, by loading the parasitic oscillator 22, the first parasitic conductor 231, the second parasitic conductor 232, the third parasitic conductor 233, and the conductive cavity 3, the main feeding oscillator 21, the first parasitic conductor 231, and the conductive cavity 3 play a great role in increasing the bandwidth. The second parasitic conductor 232 and the third parasitic conductor 233 have a great influence on the radiation pattern of the high-order mode. A single oscillator can obtain a high directivity of up to 13.05 dBi equivalent to a 16-element array, and saves the complex design and high-loss characteristics of the conventional array feeding network; it has higher efficiency and wider bandwidth, turning the high-order mode that we have always regarded as completely useless into an extremely useful high-gain mode, greatly enriching the form of the dipole antenna and expanding its application potential.

[0107] According to the second aspect of the present disclosure, an antenna is provided. The antenna includes the substrate 1 and the high-order mode oscillator described above. The antenna has all the beneficial effects of the above high-order mode oscillator, and will not be repeated here.

[0108] As Figure 25 and Figure 26 shown, the antenna further includes a first reflecting surface 401 provided at the upper end of the high-order mode oscillator 100 and a second reflecting surface 402 provided at the lower end. The first reflecting surface 401 and the second reflecting surface 402 are symmetrically arranged, and the generatrices of both are partial parabolas. Through the combination of the three-split radiation pattern and the parabolic reflecting surface, the horizontal radiation pattern and the upper and lower side lobes are reflected by the parabolic reflecting surface and then superimposed in the horizontal direction. Compared with the omnidirectional radiation pattern + conical surface combination of the conventional similar half-wave oscillator, its aperture efficiency and reflection efficiency are higher, and the omnidirectional gain is significantly improved.

[0109] The first reflecting surface 401 and the second reflecting surface 402 of the present disclosure are symmetrically arranged up and down and coaxial with the high-order mode oscillator 100. The shape of the reflecting surface is the optimal partial paraboloid, and a specific mathematical function is given.

[0110] In the present disclosure, the curved surfaces of the first reflecting surface 401 and the second reflecting surface 402 satisfy the following equation:

[0111] where is the azimuth angle of any point on the surface, 0° ≤ ≤ 2π, r is the radial radius of any point on the surface, 1 ≤ ≤ .

[0112] In the embodiments of the present disclosure, the values of the coefficients in the surface equation are respectively: x 0 = 325, z 0 = 250; a = 9.75, b = 0.125, c = 0.25; r = x 0 / a , the first reflecting surface 401 and the second reflecting surface 402 satisfy the following surface equation:

[0113] Wherein, is the azimuth angle of any point on the surface, 0° ≤ ≤ 2π, ρ is the radial radius of any point on the surface, 1 ≤ ≤ .

[0114] The broadband high-order mode source oscillator of the present invention operates in the mode with an electrical length L = (3.03~3.61)·λ. The E-plane pattern of this mode is split into three lobes, namely the middle main lobe and the upper and lower grating lobes; the upper and lower lobes are symmetric and deviate from the horizontal direction by 40~60°, and the middle main lobe points to the horizontal direction; there are relatively deep nulls between the middle main lobe and the two side grating lobes.

[0115] Next, the simulation results of the related embodiments and the optimized embodiments of the present disclosure will be compared.

[0116] Figure 27 is the Smith chart of the high-order mode oscillator and its high-gain omnidirectional antenna of the present disclosure (the solid line is the high-gain omnidirectional antenna, and the dashed line is the high-order mode oscillator), and the real part and the imaginary part of the impedance are close, making it easy to match. Figure 28 is the voltage standing wave ratio VSWR of the high-order mode oscillator and its high-gain omnidirectional antenna of the present disclosure (the solid line is the high-gain omnidirectional antenna, and the dashed line is the high-order mode oscillator; VSWR < 2.0, 5.763~7.0 GHz, BW > 19.4%). Figure 29 is the peak directivity Dp of the high-order mode oscillator and its high-gain omnidirectional antenna of the present disclosure (the solid line is the high-gain omnidirectional antenna, and the dashed line is the high-order mode oscillator; Dp > 10.2 dBi, up to Dp = 13.05 dBi at 6.50 GHz, 5.80~7.0 GHz, BW > 18.75%; Dp ≥ 11 dBi, BW > 18.15%). Figure 30 is the high-order mode oscillator and its high-gain omnidirectional antenna of the present disclosure at fL Real gain pattern at f = 5.80 GHz (the smooth line is for the high-gain omnidirectional antenna, the dotted line with dots is for the higher-order mode oscillator; the solid line is the E-plane, the dashed line is the H-plane; G R = 9.43 dBi). Figure 31 This is the real gain pattern of the higher-order mode oscillator and its high-gain omnidirectional antenna of the present disclosure at f C = 6.50 GHz (the smooth line is for the high-gain omnidirectional antenna, the dotted line with dots is for the higher-order mode oscillator; the solid line is the E-plane, the dashed line is the H-plane; G R = 12.32 dBi). Figure 32 This is the real gain pattern of the higher-order mode oscillator and its high-gain omnidirectional antenna of the present disclosure at f H = 7.0 GHz (the smooth line is for the high-gain omnidirectional antenna, the dotted line with dots is for the higher-order mode oscillator; the solid line is the E-plane, the dashed line is the H-plane; G R = 12.32 dBi). Figure 33 This is the half-power beamwidth HPBW (HPBW = 4.01 - 4.70°) of the E-plane (vertical plane) of the high-gain omnidirectional antenna composed of the higher-order mode oscillator of the present disclosure. Figure 34 This is the circularity of the H-plane (horizontal plane) of the high-gain omnidirectional antenna composed of the higher-order mode oscillator of the present disclosure (the smooth line is for the high-gain omnidirectional antenna, the circularity < 1.89 dB; the dotted line with dots is for the higher-order mode oscillator, the circularity < 0.65 dB.

[0117] Through Figure 7 and Figure 29 comparisons, Figures 8 - 10 and Figures 30 - 32 comparisons, Figure 11 and Figure 33 comparisons, for the optimized higher-order mode oscillator of the present disclosure in the frequency band of 5.763 - 7.0 GHz, the voltage standing wave ratio VSWR < 2.0, the relative bandwidth BW > 19.4%, having obvious broadband impedance characteristics. And, after symmetrically loading partial parabolic reflectors above and below, the impedance of the oscillator is stable and the standing wave hardly changes, indicating that the reflected signal hardly reflects back to the source oscillator. The higher-order mode oscillator has a relatively stable three-split omnidirectional pattern within the operating frequency band, with a gain of 3.0 - 5.2 dBi; after loading the reflector, the gain reaches 10.12 - 13.05 dBi (Dp ≥ 11 dBi, BW = 18.15%), an increase of 6.12 - 9.5 dBi, equivalent to the gain of 14 - 16 half-wave dipole arrays; the beamwidth of the E-plane pattern becomes significantly narrower, the half-power beamwidth HPBW = 4.01 - 4.70°, as Figure 33 and Figure 34as shown, and has a lower sidelobe level (SLL < -3.5 dB, preferably SLL < -13.6 dB). Additionally, after loading the reflector, the horizontal plane pattern still maintains a good circularity (<1.89 dB), and only deteriorates by 1.24 dB compared to the higher-order mode oscillator. In summary, based on the discovery of the useful characteristics of the higher-order mode, the present disclosure further proposes a broadband higher-order mode oscillator and deeply optimizes the form of the reflector to improve the omnidirectional gain, elevating the theoretical innovation to the level of engineering applications and further enriching the form of the dipole antenna (symmetrical oscillator) and expanding its application potential.

[0118] According to the third aspect of the present disclosure, there is provided a communication device including the antenna provided by the present disclosure. This communication device has all the beneficial effects of the above-mentioned higher-order mode oscillator and antenna, and will not be elaborated here.

[0119] According to the fourth aspect of the present disclosure, there is provided a vehicle including the antenna provided by the present disclosure. This vehicle has all the beneficial effects of the above-mentioned higher-order mode oscillator and antenna, and will not be elaborated here.

[0120] The preferred embodiments of the present disclosure have been described in detail above in conjunction with the accompanying drawings. However, the present disclosure is not limited to the specific details in the above embodiments. Within the scope of the technical concept of the present disclosure, various simple modifications can be made to the technical solutions of the present disclosure, and these simple modifications all fall within the protection scope of the present disclosure.

[0121] In addition, it should be noted that, in the various specific technical features described in the above specific embodiments, they can be combined in any suitable manner without contradiction. To avoid unnecessary repetition, the present disclosure will not separately describe various possible combination methods.

[0122] Furthermore, any combination can be made between various different embodiments of the present disclosure as long as it does not violate the idea of the present disclosure, and it should also be regarded as the content disclosed by the present disclosure.

Claims

1. A high-order mode oscillator, characterized in that: The invention comprises a radiation arm for being arranged on a substrate, wherein the radiation arm comprises: Main feed oscillator, A parasitic oscillator is arranged at one end of the main feeding oscillator along a first direction; and At least one parasitic conductor is arranged at the edge of the substrate, the main feeding oscillator and the parasitic oscillator overlap with the projection part of the at least one parasitic conductor in a first direction and / or in a second direction perpendicular to the first direction, and the main feeding oscillator and the parasitic oscillator can couple signals to the at least one parasitic conductor.

2. The high-order mode oscillator according to claim 1, characterized in that: Two symmetrical radiation arms are arranged on the first surface of the substrate, and a feeding gap is left between the main feeding elements of the two radiation arms.

3. The high-order mode oscillator according to claim 1, characterized in that: The radiating arms are respectively disposed on the first surface and the second surface opposite to each other of the substrate, a plurality of via holes are disposed on the periphery of the radiating arms, and the radiating arms on the first surface and the second surface are fixed by connecting members passing through the via holes.

4. The high-order mode oscillator according to claim 1, characterized in that: The at least one parasitic conductor is symmetrically arranged at two edges of the substrate in the second direction.

5. The high-order mode oscillator according to claim 1, characterized in that: The electrical length of the main feeding oscillator is L1 = (0.60~0.75)·λc, and the electrical length of the parasitic oscillator is L2 = (2.80~3.60)·λc, where λc is the center frequency f c wavelength in a vacuum.

6. The high-order mode oscillator according to claim 5, characterized in that: The electrical length of the high-order mode oscillator L = (3.03~3.6) · λc, where λc is the center frequency f c wavelength in a vacuum.

7. The high-order mode oscillator according to claim 5, characterized in that: The main feeding vibrator is an isosceles trapezoidal structure, and the upper base and the lower base of the isosceles trapezoidal structure are arranged along the first direction.

8. The high-order mode oscillator according to claim 1, characterized in that: The parasitic vibrator is provided with a first inner groove and a second inner groove which are arranged at intervals along a first direction.

9. The high-order mode oscillator according to claim 8, characterized in that: The first inner groove and the second inner groove are respectively disposed on two opposite edges of the parasitic vibrator in the second direction.

10. The high-order mode oscillator according to claim 8, characterized in that: The spacing distance between the first inner groove and the second inner groove is d=(0.45-0.65)·λ c , where λc is the center frequency f c wavelength in a vacuum.

11. The high-order mode oscillator according to claim 1, characterized in that: The radiation arm includes a first parasitic conductor, and the first parasitic conductor is arranged on a side of the main feeding dipole far away from the parasitic dipole.

12. The high-order mode oscillator according to claim 11, characterized in that: The first parasitic conductor is an isosceles triangle with a base parallel to the substrate.

13. The high-order mode oscillator according to claim 11, characterized in that: The electrical length of the first parasitic conductor is L3=(0.15~0.20)·λc, where λc is the center frequency f c wavelength in a vacuum.

14. The high-order mode oscillator according to claim 11, characterized in that: The radiation arm includes a second parasitic conductor, wherein the second parasitic conductor has two first edge portions arranged in parallel and a connecting portion connecting the two first edge portions, and the connecting portion is located between the main feeding dipole and the parasitic dipole.

15. The high-order mode oscillator according to claim 14, characterized in that: The first edge portion has a first side edge and a second side edge, the first side edge coincides with a projection of the main feeding element in the second direction, and the second side edge coincides with a projection of the parasitic element in the second direction.

16. The high-order mode oscillator according to claim 14, characterized in that: The radiation arm includes a third parasitic conductor having a second edge portion and a protrusion arranged in the middle of the second edge portion, the protrusion extends into the second inner groove of the parasitic oscillator, and the end of the second edge portion extends to the position of the first inner groove.

17. The high-order mode oscillator according to claim 16, characterized in that: The second edge portion overlaps with a projection of the parasitic vibrator in the second direction.

18. The high-order mode oscillator according to claim 16, characterized in that: The high-order mode vibrator further includes a conductive cavity sleeved on the outer periphery of the substrate, and the length of the conductive cavity in the first direction at least covers the main feeding vibrator.

19. The high-order mode oscillator according to claim 18, characterized in that: The number of the conductive cavities is two and they are spaced apart from each other along the first direction. The two conductive cavities are symmetrically arranged on both sides of the feeding gap.

20. The high-order mode oscillator according to claim 18, characterized in that: The conductive cavity comprises a first conductive half cavity and a second conductive half cavity, wherein: The first side of the first conductive half cavity is connected to at least one of the second parasitic conductor and the third parasitic conductor on the first surface of the substrate, and the second side is spaced apart from the first surface of the substrate; The second side of the second conductive half cavity is connected to at least one of the second parasitic conductor and the third parasitic conductor on the second surface of the substrate, and the first side is spaced apart from the second surface of the substrate; Wherein, the first side and the second side are arranged opposite to each other.

21. The high-order mode oscillator according to claim 20, characterized in that: The first side of the first conductive half cavity and / or the second side of the second conductive half cavity is provided with a gap for avoiding the first parasitic conductor.

22. The high-order mode oscillator according to claim 2, characterized in that: The size of the high-order mode oscillator in the first direction is L, and the size in the second direction is W, wherein L / W is between 8.4 and 8.

6.

23. The high-order mode oscillator according to claim 1, characterized in that: The high-order mode oscillator has a VSWR of <2.0 and a BW of >19.40% in the frequency band of 5.763-7.0 GHz.

24. An antenna, characterized in that: The invention comprises a substrate and the high-order mode oscillator according to any one of claims 1 to 23.

25. The antenna according to claim 24, characterized in that The antenna also includes a first reflection surface arranged at the upper end of the high-order mode oscillator and a second reflection surface arranged at the lower end. The first reflection surface and the second reflection surface are arranged symmetrically, and the generatrix of the two is a partial parabola.

26. The antenna according to claim 25, characterized in that The curved surfaces of the first reflecting surface and the second reflecting surface satisfy the following equation: in, is the azimuth of any point on the surface, 0°≤ ≤2π, ρ is the radial radius of any point on the surface, 1≤ ≤ .

27. The antenna according to claim 24, characterized in that The partial parabola satisfies the following equation: in, is the azimuth of any point on the surface, 0°≤ ≤2π, r is the radial radius of any point on the surface, 1≤ ≤ .

28. A communication device, characterized in that: Comprising the antenna according to any one of claims 24-27.

29. A vehicle, characterized in that: Comprising the antenna according to any one of claims 24-27.

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