IGBT (Insulated Gate Bipolar Translator) driving isolation power supply device based on high-frequency magnetic coupling

Abstract

The invention discloses an IGBT (Insulated Gate Bipolar Translator) driving isolation power supply device based on high-frequency magnetic coupling. The IGBT driving isolation power supply device comprises a high-frequency magnetic coupling unit, a high-frequency inverter circuit, a synchronous rectification and voltage stabilization unit and a self-adaptive control module, a planar transformer structure is adopted, a high-frequency magnetic coupling unit and a circuit are integrated on a single PCB (Printed Circuit Board) module, a SiC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) is adopted on a secondary side of a synchronous rectification and voltage stabilization unit to replace a diode for synchronous rectification, and high efficiency under light load and full load is realized by monitoring load current in real time and dynamically adjusting a PWM (Pulse-Width Modulation) duty ratio. According to the invention, by optimizing the design of the high-frequency transformer, high efficiency and high isolation voltage are realized; a planar transformer structure is adopted, and a nanocrystalline alloy magnetic core is combined, so that low loss and high energy density of less than 5% under the high frequency of more than 200kHz are realized; a full-bridge rectification circuit and a linear voltage stabilizing circuit are adopted, so that the reliability and the stability of the system are improved; the device is simple in overall structure, small in size, low in cost and suitable for large-scale production.

Description

Technical Field

[0001] The present invention relates to the field of power electronics technology, and particularly to an IGBT drive isolated power supply device based on high-frequency magnetic coupling applicable to high-voltage and high-frequency working conditions. Background Art

[0002] As the core switching device of modern power electronic systems, the drive circuit of IGBT (Insulated Gate Bipolar Transistor) requires a stable and reliable isolated power supply to ensure safety and anti-interference ability. However, the traditional power frequency transformer scheme: large volume, low efficiency, difficult to meet the high-frequency switching requirements; capacitive coupling isolation scheme: vulnerable to electromagnetic interference (EMI) in high-frequency environments, resulting in output voltage fluctuations; integrated isolated power supply chip: high cost, and the isolation voltage is usually limited to less than 3 kV; low energy transfer efficiency: the existing isolated power supply has a significant decrease in efficiency under light load or dynamic load. Therefore, how to design an IGBT drive isolated power supply device applicable to high-voltage and high-frequency working conditions is an urgent problem to be solved now. Summary of the Invention

[0003] Object of the Invention: The object of the present invention is to provide an IGBT drive isolated power supply device based on high-frequency magnetic coupling applicable to high-voltage and high-frequency working conditions.

[0004] Technical Solution: The IGBT drive isolated power supply device based on high-frequency magnetic coupling described in the present invention includes a high-frequency magnetic coupling unit, a high-frequency inverter circuit, a synchronous rectification and voltage stabilization unit, and an adaptive control module; adopting a planar transformer structure, integrating the high-frequency magnetic coupling unit and the circuit into a single PCB module, using SiC MOSFET tubes instead of diodes for synchronous rectification on the secondary side of the synchronous rectification and voltage stabilization unit, and dynamically adjusting the PWM duty cycle by real-time monitoring of the load current to achieve high efficiency under light load and full load.

[0005] Further, the high-frequency magnetic coupling unit adopts a planar transformer structure, and the magnetic core material is nanocrystalline alloy; three insulating layers are provided between the primary winding and the secondary winding, and the magnetic core is optimized by avoiding magnetic core saturation through air gap design.

[0006] Further, the three insulating layers are made of polyimide film and epoxy resin potting.

[0007] Further, the high-frequency inverter circuit adopts a half-bridge inverter topology, and the switching frequency is set to 200 kHz - 1 MHz; an LLC resonant converter is used to achieve ZVS of the primary switching tube and ZCS of the secondary rectifier tube.

[0008] Further, the LLC resonant converter selects SiC MOSFET tubes as switching devices, and the drive circuit of the LLC resonant converter adopts an integrated high-speed drive chip.

[0009] Furthermore, the SiC MOSFET tubes are fixed to the bottom of the housing by bolts. Ceramic gaskets are arranged between the SiC MOSFET tubes, and thermal conductive silicone grease is applied on both sides of the ceramic gaskets.

[0010] Furthermore, for the synchronous rectification of the synchronous rectification and voltage regulation unit, MOSFETs are used instead of diodes to reduce the conduction loss.

[0011] Furthermore, the filter circuit of the synchronous rectification and voltage regulation unit adopts multi-stage LC filtering combined with dynamic PID control, and the output voltage ripple is less than 50 mV.

[0012] Furthermore, the synchronous rectification and voltage regulation unit adopts a linear voltage regulator to ensure the stability of the output voltage.

[0013] Furthermore, the adaptive control module monitors the load current in real time through a Hall sensor; dynamically adjusts the PWM duty cycle according to the load change; integrates overvoltage, overcurrent and short-circuit protection, and the response time is less than 2 μs.

[0014] Beneficial effects: Compared with the prior art, the present invention has the following remarkable advantages: By optimizing the design of the high-frequency transformer, the present invention achieves high efficiency and high isolation voltage; adopting a planar transformer structure and combining with a nanocrystalline alloy magnetic core, it realizes low loss and high energy density of less than 5% at a high frequency greater than 200 kHz; adopting a full-bridge rectification and linear voltage regulation circuit, it improves the reliability and stability of the system; the overall structure is simple, small in size and low in cost, and is suitable for large-scale production. Description of the Drawings

[0015] Figure 1 is the structural diagram of the device of the present invention;

[0016] Figure 2 is the structural diagram of the high-frequency inverter circuit;

[0017] Figure 3 is the circuit diagram of the synchronous rectification and voltage regulation unit. Detailed Embodiments

[0018] The technical solutions of the present invention will be further described below with reference to the drawings.

[0019] The IGBT (Insulated Gate Bipolar Transistor) drive isolation power supply device based on high-frequency magnetic coupling described in the present invention includes a high-frequency magnetic coupling unit, a high-frequency inverter circuit, a synchronous rectification and voltage regulation unit, and an adaptive control module; adopting a planar transformer structure, integrating the high-frequency magnetic coupling unit and the circuit into a single PCB module, using SiC MOSFET tubes instead of diodes on the secondary side of the synchronous rectification and voltage regulation unit for synchronous rectification, and dynamically adjusting the PWM duty cycle by real-time monitoring of the load current to achieve high efficiency under light load and full load.

[0020] The structure design of the device of the present invention is as Figure 1 shown. The SiC MOSFET tubes are fixed to the bottom of the housing by bolting, using ceramic gaskets with good insulation and high thermal conductivity. While achieving insulation between the SiC MOSFET tubes, a good heat transfer effect is formed with the aluminum plate of the housing, and thermal grease is applied on both sides of the ceramic gasket to optimize the heat dissipation effect of the entire system.

[0021] Module 1: High-frequency magnetic coupling unit

[0022] Structure design: Adopting a planar transformer structure, with the magnetic core material being nanocrystalline alloy (such as Fe-Si-B) to reduce high-frequency losses;

[0023] Winding design: Three layers of insulation layers (polyimide film + epoxy resin potting) are arranged between the primary winding and the secondary winding to achieve an isolation voltage ≥ 5 kV;

[0024] Magnetic core optimization: Avoiding magnetic core saturation through air gap design to improve the energy transfer efficiency.

[0025] Module 2: High-frequency inverter circuit

[0026] The structure of the high-frequency inverter circuit is as Figure 2 shown,

[0027] Topology structure: Adopting a half-bridge inverter topology, with the switching frequency set at 200 kHz - 1 MHz; The LLC resonant converter can achieve ZVS of the primary side switching tubes and ZCS of the secondary side rectifier tubes, greatly improving the efficiency of the converter. When the switching tubes of the LLC converter adopt new semiconductor devices such as SiC and GaN, the switching tubes can operate in a high-frequency mode, reducing the volume of the converter and increasing the power density of the converter.

[0028] Switching device: Selecting SiC MOSFET as the switching device to reduce switching losses;

[0029] Driver circuit: Integrating a high-speed driver chip to ensure the fast response of the switching signal.

[0030] Module 3: Synchronous rectification and voltage regulation unit

[0031] The circuit diagram of the synchronous rectification and voltage regulation unit is as Figure 3 shown as follows.

[0032] Synchronous rectification: MOSFET is used instead of diode to reduce conduction loss; vxj

[0033] Filter circuit: Multistage LC filtering combined with dynamic PID control, with output voltage ripple < 50mV;

[0034] Voltage regulation design: A linear voltage regulator (such as LM317) is used to ensure the stability of the output voltage.

[0035] Module 4: Adaptive control module

[0036] Load detection: The load current is monitored in real time through a Hall sensor;

[0037] PWM regulation: The PWM duty cycle is dynamically adjusted according to the load change;

[0038] Protection function: Overvoltage, overcurrent and short-circuit protection are integrated, with a response time < 2μs.

[0039] The present invention adopts a planar transformer structure, combined with a nanocrystalline alloy magnetic core, to achieve low loss (< 5%) and high energy density at high frequencies (> 200kHz); the high-frequency magnetic coupling unit and the circuit are integrated into a single PCB module; MOSFET is used instead of diode for synchronous rectification on the secondary side to reduce conduction loss; by monitoring the load current in real time and dynamically adjusting the PWM duty cycle, high efficiency under light load and full load is achieved.

[0040] The present invention realizes high efficiency and high isolation voltage by optimizing the design of the high-frequency transformer;

[0041] Full-bridge rectification and linear voltage regulation circuit are adopted to improve the reliability and stability of the system; the overall structure is simple, with small volume and low cost, and is suitable for large-scale production.

Claims

1. An IGBT drive isolation power supply device based on high-frequency magnetic coupling, characterized in that: It includes a high-frequency magnetic coupling unit, a high-frequency inverter circuit, a synchronous rectification and voltage regulation unit, and an adaptive control module. It adopts a planar transformer structure to integrate the high-frequency magnetic coupling unit and the circuit into a single PCB module. The secondary side of the synchronous rectification and voltage regulation unit uses SiC MOSFET tubes instead of diodes for synchronous rectification. By real-time monitoring of the load current and dynamically adjusting the PWM duty cycle, high efficiency can be achieved under light load and full load.

2. The IGBT drive isolation power supply device based on high-frequency magnetic coupling according to claim 1 is characterized in that: The high-frequency magnetic coupling unit adopts a planar transformer structure, and the magnetic core material is a nanocrystalline alloy; three insulating layers are arranged between the primary winding and the secondary winding, and the air gap design is used to avoid core saturation and realize core optimization.

3. The IGBT drive isolation power supply device based on high-frequency magnetic coupling according to claim 2 is characterized in that: The three insulating layers are encapsulated with polyimide film and epoxy resin.

4. The IGBT drive isolation power supply device based on high-frequency magnetic coupling according to claim 1, characterized in that: The high-frequency inverter circuit adopts a half-bridge inverter topology structure, and the switching frequency is set to 200kHz-1MHz; the LLC resonant converter is used to achieve ZVS of the primary side switch tube and ZCS of the secondary side rectifier tube.

5. The IGBT drive isolation power supply device based on high-frequency magnetic coupling according to claim 4 is characterized in that: The LLC resonant converter uses SiC MOSFET as a switching device, and the driving circuit of the LLC resonant converter uses an integrated high-speed driving chip.

6. The IGBT drive isolation power supply device based on high-frequency magnetic coupling according to claim 5, characterized in that: The SiC MOSFET tube is fixed to the bottom of the shell by bolting, a ceramic gasket is arranged between the SiC MOSFET tubes, and thermal conductive silicone grease is applied on both sides of the ceramic gasket.

7. The IGBT drive isolation power supply device based on high-frequency magnetic coupling according to claim 1, characterized in that: The synchronous rectification of the synchronous rectification and voltage stabilization unit adopts MOSFET instead of diode to reduce conduction loss.

8. The IGBT drive isolation power supply device based on high-frequency magnetic coupling according to claim 1, characterized in that: The filter circuit of the synchronous rectification and voltage stabilization unit adopts multi-stage LC filtering combined with dynamic PID control, and the output voltage ripple is less than 50mV.

9. The IGBT drive isolation power supply device based on high-frequency magnetic coupling according to claim 1, characterized in that: The synchronous rectification and voltage stabilization unit adopts a linear voltage stabilizer to ensure the stability of the output voltage.

10. The IGBT drive isolation power supply device based on high frequency magnetic coupling according to claim 1, characterized in that: The adaptive control module monitors the load current in real time through a Hall sensor; dynamically adjusts the PWM duty cycle according to load changes; integrates overvoltage, overcurrent and short-circuit protection, and has a response time of less than 2μs.

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