High-frequency module and communication device

Abstract

The invention relates to a high-frequency module and a communication device. Provided is a high-frequency module which is reduced in size by reducing the size of a mounting substrate. A high-frequency module (1) is provided with a mounting substrate, a first member (6), and a shield member (3). The mounting substrate has a first main surface (21) and a second main surface. The first member (6) is disposed on a first main surface (21) of the mounting substrate. The shield member (3) is disposed on the first main surface (21) of the mounting substrate. The first member (6) is in contact with the shield member (3).

Description

Technical Field

[0001] The present invention relates to a high-frequency module and a communication device, and particularly to a high-frequency module including a shielding member and a communication device including the high-frequency module. Background Art

[0002] A high-frequency module having a transmission path and a reception path is disclosed in Patent Document 1. The high-frequency module of Patent Document 1 includes a metal shielding layer (shielding member) on the main surface of a module substrate (mounting substrate). In the high-frequency module of Patent Document 1, the metal shielding layer is disposed between an inductor included in the transmission path and an inductor included in the reception path.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: International Publication No. 2022 / 034869 Summary of the Invention

[0006] Problems to be Solved by the Invention

[0007] However, in the high-frequency module of Patent Document 1, there is a case where the high-frequency module is enlarged due to the enlargement of the module substrate.

[0008] An object of the present invention is to provide a high-frequency module miniaturized by miniaturizing a mounting substrate and a communication device including the high-frequency module.

[0009] Solutions for Solving the Problems

[0010] A high-frequency module according to an aspect of the present invention includes a substrate, a first component, and a shielding member. The mounting substrate has a first main surface and a second main surface. The first component is disposed on the first main surface of the mounting substrate. The shielding member is disposed on the first main surface of the mounting substrate. The first component is in contact with the shielding member.

[0011] A communication device according to an aspect of the present invention includes the high-frequency module and a signal processing circuit connected to the high-frequency module.

[0012] Effects of the Invention

[0013] According to the high-frequency module and the communication device of the above aspect, the high-frequency module can be miniaturized. Brief Description of the Drawings

[0014] Figure 1 It is a cross-sectional view of the high-frequency module of Embodiment 1.

[0015] Figure 2It is a partial top view of the high-frequency module of Embodiment 1.

[0016] Figure 3 It is a partial cross-sectional view of the high-frequency module of Embodiment 1, corresponding to the X1-X1 plane of Figure 2

[0017] Figure 4 It is a circuit structure diagram of a communication device equipped with the high-frequency module of Embodiment 1.

[0018] Figure 5 It is a partial top view of the high-frequency module of Embodiment 2.

[0019] Figure 6 It is a partial cross-sectional view of the high-frequency module of Embodiment 2, corresponding to the X2-X2 plane of Figure 5

[0020] Figure 7 It is a partial cross-sectional view of the high-frequency module of Embodiment 2.

[0021] Figure 8 It is a cross-sectional view of the high-frequency module of Embodiment 4.

[0022] Figure 9 It is a cross-sectional view of the high-frequency module of Embodiment 6.

[0023] Figure 10 It is a cross-sectional view of the high-frequency module of Embodiment 7.

[0024] Figure 11 It is a cross-sectional view of an example of the high-frequency module of Embodiment 8.

[0025] Figure 12 It is a cross-sectional view of a different example of the high-frequency module of Embodiment 8 from Figure 11

[0026] Explanation of Reference Numerals

[0027] ​​​1, 1a, 1b, 1c, high-frequency module; 2, mounting substrate; 21, first main surface; 22, second main surface; 23, ground electrode; 24, pad electrode; 25, pad electrode; 26, pad electrode; 29, outer peripheral surface; 3, shielding member; 31, main surface; 32, main surface; 33, one end; 6, 6a, 6b, electronic component (first component); 61, first electrode (electrode); 61a, first electrode; 62, 62a, second electrode; 63b, main surface; 64b, electrode; 7, insulator; 8, resin layer; 81, main surface; 82, outer peripheral surface; 9, external shielding electrode; 91, recess; 92, protrusion; 93, protrusion; 94, recess; 10, external connection terminal; 11, antenna terminal; 12, signal output terminal; 13, signal input terminal; 16, antenna; 17, signal processing circuit; 171, RF signal processing circuit; 172, baseband signal processing circuit; 41, electronic component (second component); 51, electronic component (third component); 52, electronic component; 100, communication device; 110, switch; 111, common terminal; 112, 113, selection terminal; 121, first matching circuit; 122, second matching circuit; 131, transmit filter; 132, receive filter; 141, third matching circuit; 142, fourth matching circuit; 151, power amplifier; 152, low noise amplifier; D1, first direction; D2, direction; D3, direction; H1, height; H2, height. Detailed implementation mode

[0028] Hereinafter, the high-frequency module and the communication device of the embodiment will be described with reference to the drawings. Each of the drawings referred to in the following embodiments is a schematic diagram, and the ratio of the sizes and thicknesses of the respective components in the drawings does not necessarily reflect the actual dimensional ratio.

[0029] (Embodiment 1)

[0030] (1) High-frequency module

[0031] As Figure 4As shown, the high-frequency module 1 is used for, for example, the communication device 100. The communication device 100 is, for example, a mobile phone such as a smart phone. In addition, the communication device 100 is not limited to a mobile phone. For example, it may also be a wearable terminal such as a smart watch. The high-frequency module 1 is, for example, a high-frequency module that can handle 4G (4th generation mobile communication) standards, 5G (5th generation mobile communication) standards, etc. The 4G standard is, for example, 3GPP (registered trademark, Third Generation Partnership Project), LTE (registered trademark, Long Term Evolution) standard. The 5G standard is, for example, 5G NR (New Radio). The high-frequency module 1 can, for example, handle Carrier Aggregation and Dual Connectivity.

[0032] (2) Circuit Structure of High-Frequency Module

[0033] Hereinafter, Figure 4 will be used to describe the circuit structure of the high-frequency module 1 of Embodiment 1.

[0034] As Figure 4 shown, the high-frequency module 1 of Embodiment 1 includes a plurality of external connection terminals 10, a switch 110, a first matching circuit 121, a second matching circuit 122, a transmit filter 131, a receive filter 132, a third matching circuit 141, a fourth matching circuit 142, a power amplifier 151, and a low-noise amplifier 152. The plurality of external connection terminals 10 include an antenna terminal 11, a signal output terminal 12, and a signal input terminal 13. The first matching circuit 121, the transmit filter 131, the third matching circuit 141, and the power amplifier 151 in the high-frequency module 1 are included in the transmit path. The second matching circuit 122, the receive filter 132, the fourth matching circuit 142, and the low-noise amplifier 152 in the high-frequency module 1 are included in the receive path.

[0035] (2.1) Power Amplifier

[0036] The power amplifier 151 is an amplifier that amplifies the transmit signal. The power amplifier 151 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the power amplifier 151 is connected to the signal processing circuit 17 via the signal output terminal 12. The output terminal of the power amplifier 151 is connected to the transmit filter 131 via the third matching circuit 141.

[0037] (2.2) Transmit Filter

[0038] The transmission filter 131 is a filter that allows the transmission signal to pass through. The transmission filter 131 is, for example, an elastic wave filter that includes a plurality of series-arm resonators and a plurality of shunt-arm resonators. The elastic wave filter is, for example, a SAW (Surface Acoustic Wave) filter that utilizes surface acoustic waves. The transmission filter 131 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the transmission filter 131 is connected to the output terminal of the power amplifier 151 via the third matching circuit 141. The output terminal of the transmission filter 131 is connected to the switch 110 via the first matching circuit 121.

[0039] (2.3) Low-noise amplifier

[0040] The low-noise amplifier 152 is an amplifier that amplifies the received signal. The low-noise amplifier 152 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the low-noise amplifier 152 is connected to the signal processing circuit 17 via the signal input terminal 13. The output terminal of the low-noise amplifier 152 is connected to the reception filter 132 via the fourth matching circuit 142.

[0041] (2.4) Reception filter

[0042] The reception filter 132 is a filter that allows the received signal to pass through. The reception filter 132 is, for example, an elastic wave filter that includes a plurality of series-arm resonators and a plurality of shunt-arm resonators. The elastic wave filter is, for example, a SAW filter that utilizes surface acoustic waves. The reception filter 132 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the reception filter 132 is connected to the switch 110 via the second matching circuit 122. The output terminal of the reception filter 132 is connected to the output terminal of the low-noise amplifier 152 via the fourth matching circuit 142.

[0043] (2.5) Switch

[0044] The switch 110 switches the filter connected to the antenna terminal 11 between the transmission filter 131 and the reception filter 132. That is, the switch 110 is a switch for connecting either the reception path or the transmission path to the antenna terminal 11. The switch 110 has a common terminal 111 and a plurality of (two in the illustrated example) selection terminals 112, 113. The common terminal 111 is connected to the antenna terminal 11. The selection terminal 112 is connected to the transmission filter 131 via the first matching circuit 121. The selection terminal 113 is connected to the reception filter 132 via the second matching circuit 122.

[0045] (2.6) Matching circuit

[0046] The first matching circuit 121 is a circuit for achieving impedance matching between the output terminal of the transmission filter 131 and the selection terminal 112 of the switch 110. The first matching circuit 121 includes at least one of one or more capacitors and one or more inductors.

[0047] The second matching circuit 122 is a circuit for achieving impedance matching between the selection terminal 113 of the switch 110 and the input terminal of the reception filter 132. The second matching circuit 122 includes at least one of one or more capacitors and one or more inductors.

[0048] The third matching circuit 141 is a circuit for achieving impedance matching between the output terminal of the power amplifier 151 and the input terminal of the transmission filter 131. The third matching circuit 141 includes at least one of one or more capacitors and one or more inductors.

[0049] The fourth matching circuit 142 is a circuit for achieving impedance matching between the output terminal of the reception filter 132 and the input terminal of the low-noise amplifier 152. The fourth matching circuit 142 includes at least one of one or more capacitors and one or more inductors. In addition, the fourth matching circuit 142 includes a capacitor connected to the ground electrode 23.

[0050] (3) Structure of the high-frequency module

[0051] Hereinafter, with reference to the drawings, the structure of the high-frequency module 1 of Embodiment 1 will be described.

[0052] For example, as Figure 1 shown, the high-frequency module 1 of Embodiment 1 includes a mounting substrate 2, a shielding member 3, electronic components 41, electronic components 51, electronic components 52, and external connection terminals 10. In addition, as Figure 2 and Figure 3 shown, the high-frequency module 1 includes electronic components 6.

[0053] (3.1) Mounting substrate

[0054] As Figure 1 shown, the mounting substrate 2 has a first main surface 21 and a second main surface 22. The first main surface 21 and the second main surface 22 face each other in the first direction D1.

[0055] On the first main surface 21 of the mounting substrate 2, the shielding member 3, the electronic components 41, the electronic components 51, the electronic components 52, and the electronic components 6 are arranged.

[0056] On the second main surface 22 of the mounting substrate 2, the external connection terminals 10 are arranged.

[0057] The mounting substrate 2 is, for example, a multilayer substrate including a plurality of dielectric layers and a plurality of conductive layers. The plurality of dielectric layers and the plurality of conductive layers are stacked in the first direction D1. The plurality of conductive layers are formed in a predetermined pattern determined for each layer. Each of the plurality of conductive layers includes one or more conductor portions in a plane orthogonal to the first direction D1. The material of each conductive layer is, for example, copper. The plurality of conductive layers include a ground electrode 23 to which a ground potential is applied. In the high-frequency module 1, the plurality of ground terminals and the ground electrode 23 are electrically connected via a conduction conductor of the mounting substrate 2 or the like. The mounting substrate 2 is, for example, a resin multilayer substrate. The mounting substrate 2 is not limited to a resin multilayer substrate. For example, it may also be an LTCC (Low Temperature Co-fired Ceramics) substrate, a printed wiring board, or an HTCC (High Temperature Co-fired Ceramics) substrate. Additionally, it may be that the ground electrode 23 is formed on the first main surface 21 of the mounting substrate 2.

[0058] Furthermore, the mounting substrate 2 is not limited to a resin multilayer substrate. For example, it may also be a wiring structure. The wiring structure is, for example, a multilayer structure. The multilayer structure includes at least one insulating layer and at least one conductive layer. The insulating layer is formed in a predetermined pattern. When there are a plurality of insulating layers, the plurality of insulating layers are formed in a predetermined pattern determined for each layer. The conductive layer is formed in a predetermined pattern different from the predetermined pattern of the insulating layer. When there are a plurality of conductive layers, the plurality of conductive layers are formed in a predetermined pattern determined for each layer. The conductive layer may also include one or more rewiring portions. In the wiring structure, among the two surfaces facing each other in the thickness direction of the multilayer structure, the first surface is the first main surface 21 of the mounting substrate 2, and among the two surfaces facing each other in the thickness direction of the multilayer structure, the second surface is the second main surface 22 of the mounting substrate 2. The wiring structure may also be, for example, an interposer. The interposer may also be an interposer using a silicon substrate or a substrate composed of multiple layers.

[0059] The first main surface 21 and the second main surface 22 of the mounting substrate 2 are separated in the first direction D1 and intersect the first direction D1. The first main surface 21 of the mounting substrate 2 is, for example, orthogonal to the first direction D1, but for example, it may also include the side surface of a conductor portion or the like as a surface that is not orthogonal to the first direction D1. Additionally, the second main surface 22 of the mounting substrate 2 is, for example, orthogonal to the first direction D1, but for example, it may also include the side surface of a conductor portion or the like as a surface that is not orthogonal to the first direction D1. Additionally, it may be that the first main surface 21 and the second main surface 22 of the mounting substrate 2 are formed with fine irregularities, recesses, or protrusions.

[0060] (3.2) Shielding member

[0061] As Figures 1 to 3As shown, the shielding member 3 is disposed on the first main surface 21 of the mounting substrate 2. As Figure 1 shown, the shielding member 3 is disposed between the electronic component 41 and the electronic component 51. Here, "the shielding member 3 is disposed between the electronic component 41 and the electronic component 51" means the following: the shielding member 3 is disposed on a straight line connecting any position of the electronic component 41 and any position of the electronic component 51.

[0062] The shielding member 3 has conductivity. The shielding member 3 is connected to one or more (two in Figure 2 this case) pad electrodes 24 disposed on the first main surface 21. More specifically, the shielding member 3 is connected to the two pad electrodes 24 via solder, for example. The two pad electrodes 24 are connected to the ground electrode 23. Thereby, the shielding member 3 can improve the isolation between the electronic component 41 and the electronic component 51.

[0063] The shielding member 3 has, for example, a short-axis direction in a direction D2 orthogonal to the first direction D1 and a long-axis direction in a direction D3 orthogonal to the first direction D1 and the direction D2. The shielding member 3 is, for example, a metal plate having the direction D2 as the thickness direction. In addition, the shielding member 3 may be L-shaped, U-shaped, or crank-shaped.

[0064] (3.3) Electronic Component

[0065] The electronic component 41 is disposed on the first main surface 21 of the mounting substrate 2. The electronic component 41 includes elements included in the transmission path of the high-frequency module 1. The electronic component 41 is, for example, an IC chip including a power amplifier 151. The electronic component 41 corresponds to the second component of the present disclosure.

[0066] The electronic component 41 is, for example, flip-chip mounted on the first main surface 21 of the mounting substrate 2. The electronic component 41 is connected to the mounting substrate 2 by a plurality of conductive bumps, for example. The material of the conductive bumps is, for example, solder, gold, or copper.

[0067] The electronic component 51 is disposed on the first main surface 21 of the mounting substrate 2. The electronic component 51 includes elements included in the reception path of the high-frequency module 1. The electronic component 51 is, for example, an IC chip including a low-noise amplifier 152. The electronic component 51 corresponds to the third component of the present disclosure.

[0068] The electronic component 51 is, for example, flip-chip mounted on the first main surface 21 of the mounting substrate 2. The electronic component 51 is connected to the mounting substrate 2 by a plurality of conductive bumps, for example. The material of the conductive bumps is, for example, solder, gold, or copper.

[0069] The electronic component 52 is disposed on the first main surface 21 of the mounting substrate 2. The distance between the electronic component 52 and the electronic component 41 is longer than the distance between the electronic component 51 and the electronic component 41. The electronic component 52 is, for example, an IC chip including the switch 110.

[0070] The electronic component 52 is, for example, flip-chip mounted on the first main surface 21 of the mounting substrate 2. The electronic component 52 is connected to the mounting substrate 2 by, for example, a plurality of conductive bumps. The material of the conductive bumps is, for example, solder, gold, or copper.

[0071] The electronic component 6 is disposed on the first main surface 21 of the mounting substrate 2. The electronic component 6 includes the components included in the reception path of the high-frequency module 1 and is connected to the ground electrode 23. The electronic component 6 is, for example, a capacitor included in the fourth matching circuit 142.

[0072] The electronic component 6 is disposed in contact with the shielding member 3. The electronic component 6 corresponds to the first component of the present disclosure. Here, "the electronic component 6 is disposed in contact with the shielding member 3" includes not only the case where the electronic component 6 is in direct contact with the shielding member 3 but also the case where they are in contact via solder or the like. Thereby, the mounting area of the electronic component 6 and the shielding member 3 on the first main surface 21 of the mounting substrate 2 can be reduced, and the area of the mounting substrate 2 can be reduced.

[0073] The electronic component 6 is, for example, a chip capacitor and has a first electrode 61 and a second electrode 62. The shielding member 3 is in contact with the first electrode 61 of the electronic component 6. The first electrode 61 is connected to the pad electrode 24 of the mounting substrate 2 by solder. That is, the first electrode 61 is connected to the mounting substrate 2. Thereby, the first electrode 61 of the electronic component 6 is directly connected to the ground electrode 23 and is connected to the ground electrode 23 via the shielding member 3. Therefore, the potential difference between the first electrode 61 of the electronic component 6 and the shielding member 3 disappears, the generation of parasitic capacitance can be reduced, and the connectivity between the first electrode 61 of the electronic component 6 and the ground electrode 23 can be improved. The second electrode 62 is connected to the pad electrode 25 disposed on the first main surface 21 of the mounting substrate 2 by solder.

[0074] (3.4) External connection terminals

[0075] The plurality of external connection terminals 10 are terminals for electrically connecting the mounting substrate 2 and an external substrate.

[0076] As Figure 1As shown, a plurality of external connection terminals 10 are arranged on the second main surface 22 of the mounting substrate 2. "The external connection terminals 10 are arranged on the second main surface 22 of the mounting substrate 2" includes the following cases: the external connection terminals 10 are mechanically connected to the second main surface 22 of the mounting substrate 2; the external connection terminals 10 are electrically connected to the mounting substrate 2 (appropriate conductor portions thereof). The material of the plurality of external connection terminals 10 is, for example, a metal (for example, copper, copper alloy, etc.). The plurality of external connection terminals 10 are respectively columnar electrodes. For example, the columnar electrodes are joined to the conductor portions of the mounting substrate 2 using, for example, solder, but are not limited thereto. For example, a conductive adhesive (for example, a conductive paste) may also be used for joining, or direct joining may be used.

[0077] (4) Communication device

[0078] As Figure 4 shown, the communication device 100 includes a high-frequency module 1, a signal processing circuit 17, and an antenna 16.

[0079] The antenna 16 is connected to the antenna terminal 11 of the high-frequency module 1. The antenna 16 has a transmission function of radiating a transmission signal output from the high-frequency module 1 as radio waves and a reception function of receiving a reception signal as radio waves from the outside and outputting it to the high-frequency module 1.

[0080] The signal processing circuit 17 includes an RF signal processing circuit 171 and a baseband signal processing circuit 172. The signal processing circuit 17 processes signals passing through the high-frequency module 1. More specifically, the signal processing circuit 17 processes transmission signals and reception signals.

[0081] The RF signal processing circuit 171 is, for example, an RFIC (Radio Frequency Integrated Circuit). The RF signal processing circuit 171 performs signal processing on high-frequency signals.

[0082] The RF signal processing circuit 171 performs signal processing such as upconversion and amplification on the transmission signal sent from the baseband signal processing circuit 172 and outputs the signal-processed transmission signal to the high-frequency module 1. In addition, the RF signal processing circuit 171 performs signal processing such as amplification and downconversion on the reception signal output from the high-frequency module 1 and outputs the signal-processed reception signal to the baseband signal processing circuit 172.

[0083] The baseband signal processing circuit 172 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 172 performs predetermined signal processing on transmission signals from outside the signal processing circuit 17. The reception signal processed by the baseband signal processing circuit 172 is used, for example, as an image signal for image display or as a voice signal for a call.

[0084] In addition, the RF signal processing circuit 171 also functions as a control unit that controls the connection of the switch 110 included in the high-frequency module 1 based on transmission and reception of high-frequency signals (transmission signals, reception signals). Specifically, the RF signal processing circuit 171 switches the connection of the switch 110 of the high-frequency module 1 according to a control signal (not shown). In addition, the control unit may be provided outside the RF signal processing circuit 171. For example, it may be provided in the high-frequency module 1 or the baseband signal processing circuit 172.

[0085] (5) Effects

[0086] The high-frequency module 1 of Embodiment 1 includes a mounting substrate 2, electronic components 6, and a shielding member 3. The mounting substrate 2 has a first main surface 21 and a second main surface 22. The electronic components 6 are disposed on the first main surface 21 of the mounting substrate 2. The shielding member 3 is disposed on the first main surface 21 of the mounting substrate 2. The electronic components 6 are in contact with the shielding member 3. Thus, in the high-frequency module 1 of Embodiment 1, when viewed from above in the first direction D1, the electronic components 6 and the shielding member 3 can be disposed close to each other, so that the area of the mounting substrate 2 can be reduced. Therefore, the high-frequency module 1 can be miniaturized.

[0087] In addition, in the high-frequency module 1 of Embodiment 1, the electronic component 6 has a first electrode 61 connected to the mounting substrate 2. The shielding member 3 is in contact with the first electrode 61 of the electronic component 6. Thus, in the high-frequency module 1 of Embodiment 1, deterioration of the characteristics of the high-frequency module due to parasitic capacitance generated between the electronic component 6 and the shielding member 3 can be reduced.

[0088] In addition, in the high-frequency module 1 of Embodiment 1, the mounting substrate 2 has a ground electrode 23. The first electrode 61 of the electronic component 6 is connected to the ground electrode 23. The shielding member 3 is in contact with the pad electrode 24 of the mounting substrate 2 connected to the ground electrode 23. Thus, in the high-frequency module 1 of Embodiment 1, the first electrode 61 of the electronic component 6 can be connected to the ground electrode 23 via the shielding member 3. Therefore, the connectivity between the first electrode 61 of the electronic component 6 and the ground electrode 23 is improved.

[0089] In addition, the high-frequency module 1 of Embodiment 1 includes an electronic component 41 and an electronic component 51 disposed on the first main surface 21 of the mounting substrate 2. A shielding member 3 is disposed between the electronic component 41 and the electronic component 51. At least one of the electronic component 41 and the electronic component 51 is a power amplifier 151 that amplifies a transmission signal. Thus, in the high-frequency module 1 of Embodiment 1, the isolation degree between the electronic component 41 and the electronic component 51 is improved.

[0090] The communication device 100 of Embodiment 1 includes a high-frequency module 1 and a signal processing circuit 17 connected to the high-frequency module 1. Accordingly, in the communication device 100 of Embodiment 1, miniaturization and high integration of the communication device 100 can be achieved by miniaturizing the high-frequency module 1.

[0091] (Embodiment 2)

[0092] (1) Structure

[0093] As Figure 5 shown, the high-frequency module 1a of Embodiment 2 includes an electronic component 6a instead of the electronic component 6. In the high-frequency module 1a of Embodiment 2, the shielding member 3 is insulated from the electronic component 6a.

[0094] The electronic component 6a is, for example, a capacitor included in the fourth matching circuit 142. The electronic component 6a is, for example, a capacitor connected between the input terminal of the low-noise amplifier 152 and the output terminal of the receiving filter 132.

[0095] In the high-frequency module 1a of Embodiment 2, as Figure 5 and Figure 6 shown, an insulator 7 is disposed on the shielding member 3. The shielding member 3 contacts the electronic component 6a with the insulator 7 therebetween. Here, "the shielding member 3 contacts the electronic component 6a with the insulator 7 therebetween" means the following: the shielding member 3 and the electronic component 6a are not in direct contact, but the shielding member 3 contacts the insulator 7 and the electronic component 6a contacts the insulator 7. Specifically, the main surface 31 of the shielding member 3 and the first electrode 61a of the electronic component 6a face each other in the direction D2, and the insulator 7 is disposed between the main surface 31 of the shielding member 3 and the first electrode 61a of the electronic component 6a.

[0096] As Figure 5 and Figure 6 shown, the shielding member 3 has a main surface 31 and a main surface 32 that face each other in the direction D3. The main surface 31 of the shielding member 3 faces the electronic component 6. The insulator 7 is disposed on the main surface 31 of the shielding member 3. The insulator 7 is, for example, an epoxy resin. The insulator 7 is formed, for example, by coating a material containing an epoxy resin on the shielding member 3.

[0097] As Figure 5 and Figure 6 shown, the first electrode 61a of the electronic component 6a is connected to a pad electrode 26 of the mounting substrate 2 different from the pad electrode 24. In the mounting substrate 2, the pad electrode 24 and the pad electrode 26 are insulated from each other. Accordingly, the electronic component 6a is insulated from the shielding member 3 and the ground electrode 23. The second electrode 62a of the electronic component 6a is connected to a pad electrode 25 of the mounting substrate 2 different from the pad electrode 24.

[0098] In the high-frequency module 1a of Embodiment 2, the electronic component 6a is insulated from the ground electrode 23. Therefore, as the electronic component 6a, a component that needs to be insulated from the ground electrode 23 can be used. Thus, in the high-frequency module 1a of Embodiment 2, the degree of freedom in arranging components on the first main surface 21 of the mounting substrate 2 is increased, and thus it is easy to miniaturize the high-frequency module 1a.

[0099] In addition, in the high-frequency module 1a of Embodiment 2, the insulator 7 may also be arranged on the main surface 32 of the shielding member 3.

[0100] (2) Effects

[0101] In the high-frequency module 1a of Embodiment 2, the shielding member 3 has a main surface 31 facing the electronic component 6a. The insulator 7 is arranged on the main surface 31 of the shielding member 3. Thus, in the high-frequency module 1a of Embodiment 2, the electronic component 6a can be insulated from the shielding member 3, and thus it is easy to arrange the electronic component 6a in contact with the shielding member 3. Therefore, it is easy to miniaturize the high-frequency module 1a.

[0102] (Embodiment 3)

[0103] As Figure 7 shown, the high-frequency module 1b of Embodiment 3 includes an electronic component 6b instead of the electronic component 6. In the high-frequency module 1b of Embodiment 3, the shielding member 3 is insulated from the electronic component 6b.

[0104] The electronic component 6b is an element of an LGA (Land Grid Array) having connection terminals on the main surface 63b facing the first main surface 21 of the mounting substrate 2. The electronic component 6b has a plurality of electrodes 64b on the main surface 63b. That is, as Figure 7 shown, the plurality of electrodes 64b of the electronic component 6b do not contact the shielding member 3. Therefore, the electronic component 6b is insulated from the shielding member 3 and the ground electrode 23. The electronic component 6b is, for example, a receive filter 132.

[0105] In the high-frequency module 1b of Embodiment 3, the electronic component 6b is insulated from the ground electrode 23. Therefore, in the high-frequency module 1b of Embodiment 3, the electronic component 6b that is not connected to the ground electrode 23 can be brought into contact with the shielding member 3. Thus, in the high-frequency module 1b of Embodiment 3, the degree of freedom in arranging components on the first main surface 21 of the mounting substrate 2 is increased, and thus, like the high-frequency module 1 of Embodiment 1, it is easy to miniaturize the high-frequency module 1b.

[0106] (Embodiment 4)

[0107] (1) Structure

[0108] The high-frequency module 1c according to Embodiment 4 includes a resin layer 8 and an external shielding electrode 9 on the basis of the structure of the high-frequency module 1 according to Embodiment 1.

[0109] (1.1) Resin layer

[0110] As Figure 8 shown, the resin layer 8 is disposed on the first main surface 21 of the mounting substrate 2. The resin layer 8 covers the electronic component 6. In addition, as Figure 8 shown, the resin layer 8 covers each of the electronic components 41, 51, and 52. The resin layer 8 contains, for example, epoxy resin and filler.

[0111] (1.2) External shielding electrode

[0112] The external shielding electrode 9 covers the first main surface 21 of the mounting substrate 2. More specifically, the external shielding electrode 9 covers the resin layer 8. In the high-frequency module 1c, the external shielding electrode 9 is a shielding electrode provided for the purpose of electromagnetic shielding inside and outside the high-frequency module 1c. The external shielding electrode 9 has a multilayer structure formed by laminating a plurality of metal layers, but is not limited to the multilayer structure and may be a single metal layer. The single metal layer contains one or more metals. The external shielding electrode 9 covers the main surface 81 of the resin layer 8 on the side opposite to the mounting substrate 2, the outer peripheral surface 82 of the resin layer 8, and the outer peripheral surface 29 of the mounting substrate 2.

[0113] The external shielding electrode 9 is in contact with the shielding member 3. More specifically, the external shielding electrode 9 has a recess 91 opposite to the first main surface 21 of the mounting substrate 2. The external shielding electrode 9 has a convex portion 92 that overlaps the recess 91 when viewed from above in the first direction D1. One end 33 of the two ends of the shielding member 3 in the first direction D1 that does not contact the mounting substrate 2 is disposed in the recess 91 of the external shielding electrode 9. That is, the shielding member 3 is in contact with the recess 91 of the external shielding electrode 9. As a result, the contact area between the external shielding electrode 9 and the shielding member 3 is increased, so that the external shielding electrode 9 and the ground electrode 23 are electrically connected via the shielding member 3. Therefore, the electromagnetic shielding effect of the external shielding electrode 9 is improved.

[0114] (2) Effect

[0115] The high-frequency module 1c according to Embodiment 4 includes an external shielding electrode 9 that covers the first main surface 21 of the mounting substrate 2. The mounting substrate 2 has a ground electrode 23 connected to the shielding member 3. The shielding member 3 is in contact with the external shielding electrode 9. Thus, in the high-frequency module 1c according to Embodiment 4, the external shielding electrode 9 can be connected to the ground electrode 23 via the shielding member 3. Therefore, the noise tolerance of the high-frequency module 1c is improved.

[0116] In the high-frequency module 1c of the fourth embodiment, the external shielding electrode 9 has a recessed portion 91 facing the first main surface 21 of the mounting substrate 2. The shielding member 3 is in contact with the recessed portion 91 of the external shielding electrode 9. Thus, in the high-frequency module 1c of the fourth embodiment, the contact area between the shielding member 3 and the external shielding electrode 9 is large, so the shielding property of the external shielding electrode 9 is improved.

[0117] (Implementation method 5)

[0118] (1) Structure

[0119] Similar to the high-frequency module 1c of the fourth embodiment, the high-frequency module 1c of the fifth embodiment includes a resin layer 8 and an external shielding electrode 9. Similar to the high-frequency module 1a of the second embodiment, the high-frequency module 1c of the fifth embodiment includes an insulator 7.

[0120] The material of the insulator 7 is different from that of the resin layer 8. For example, the resin layer 8 contains a filler, and the insulator 7 does not contain a filler. In addition, for example, the resin material other than the filler of the resin layer 8 and the resin material of the insulator 7 are different resins from each other.

[0121] In the high-frequency module 1c of the fifth embodiment, similarly to the high-frequency module 1a of the second embodiment, the shield member 3 is in contact with the electronic component 6 via the insulator 7. The resin layer 8 covers the electronic component 6 and the insulator 7. Specifically, the main surface 31 of the shield member 3 and the first electrode 61a of the electronic component 6a are opposite to each other in the direction D2, and the insulator 7 is arranged between the main surface 31 of the shield member 3 and the first electrode 61a of the electronic component 6a. The resin layer 8 does not exist between the main surface 31 of the shield member 3 and the first electrode 61a of the electronic component 6a.

[0122] (2) Effect

[0123] The high-frequency module 1c of the fifth embodiment further includes a resin layer 8 covering the mounting substrate 2 and the electronic component 6a. The material of the insulator 7 is different from that of the resin layer 8. At least a part of the insulator 7 is located between the shield member 3 and the electronic component 6a. Thus, in the high-frequency module 1c of the fifth embodiment, the electronic component 6a can be protected by the resin layer 8, and the insulation between the electronic component 6a and the shield member 3 can be improved by the insulator 7.

[0124] (Implementation 6)

[0125] (1) Structure

[0126] In the high-frequency module 1 c of the sixth embodiment, a height H1 of the shield member 3 in the first direction D1 from the first main surface 21 of the mounting substrate 2 is higher than any other electronic components arranged on the first main surface 21 of the mounting substrate 2 .

[0127] Specifically, as Figure 9 shown, for example, the height H1 of the shielding member 3 in the first direction D1 from the first main surface 21 of the mounting substrate 2 is greater than the height H2 of the electronic component 41 in the first direction D1 from the first main surface 21 of the mounting substrate 2. The "height H1 of the shielding member 3 in the first direction D1 from the first main surface 21 of the mounting substrate 2" refers to the distance in the first direction D1 between the first main surface 21 of the mounting substrate 2 and one end 33 of the shielding member 3 in the first direction D1 that does not contact the mounting substrate 2. In addition, the "height H2 of the electronic component 41 in the first direction D1 from the first main surface 21 of the mounting substrate 2" refers to the distance in the first direction D1 between the first main surface 21 of the mounting substrate 2 and the main surface on the side opposite to the main surface of the electronic component 41 that faces the first main surface 21 of the mounting substrate 2 among the plurality of main surfaces. Here, the height H2 of the electronic component 41 in the first direction D1 from the first main surface 21 of the mounting substrate 2 is equal to or greater than the height of the electronic component 51 in the first direction D1 from the first main surface 21 of the mounting substrate 2 and is equal to or greater than the height of the electronic component 52 in the first direction D1 from the first main surface 21 of the mounting substrate 2. That is, the height H1 of the shielding member 3 in the first direction D1 from the first main surface 21 of the mounting substrate 2 is higher than the height of any component on the first main surface 21 of the mounting substrate 2 in the first direction D1 from the first main surface 21 of the mounting substrate 2. Therefore, the isolation effect between the electronic component 41 and the electronic component 51 achieved by the shielding member 3 is improved.

[0128] In the high-frequency module 1c of Embodiment 6, the external shielding electrode 9 has a recess 91 on the surface opposite to the first main surface 21 of the mounting substrate 2. One end 33 of the two ends of the shielding member 3 in the first direction D1 that does not contact the mounting substrate 2 is disposed in the recess 91 of the external shielding electrode 9. Thereby, the adhesion between the external shielding electrode 9 and the shielding member 3 is improved, and thus the external shielding electrode 9 and the ground electrode 23 are electrically connected via the shielding member 3. Therefore, the electromagnetic shielding effect of the external shielding electrode 9 is improved.

[0129] (2) Effects

[0130] In the high-frequency module 1c of Embodiment 6, the height H1 of the shielding member 3 in the first direction D1 with respect to the first main surface 21 of the mounting substrate 2 is higher than the height H2 of any component other than the shielding member 3 on the first main surface 21 of the mounting substrate 2 in the first direction D1 with respect to the first main surface 21 of the mounting substrate 2. Thereby, in the high-frequency module 1c of Embodiment 6, the adhesion between the shielding member 3 and the external shielding electrode 9 is improved, and thus the shielding property of the external shielding electrode 9 is improved.

[0131] (Embodiment 7)

[0132] (1) Structure

[0133] In the high-frequency module 1c of Embodiment 7, the height H1 of the shielding member 3 from the mounting substrate 2 is lower than any one of the heights of at least one of the other electronic components disposed on the first main surface 21 of the mounting substrate 2.

[0134] Specifically, as Figure 10 shown, for example, the height H1 of the shielding member 3 in the first direction D1 from the first main surface 21 of the mounting substrate 2 is smaller than the height H2 of the electronic component 41 in the first direction D1 from the first main surface 21 of the mounting substrate 2. Thus, the height H1 of the shielding member 3 in the first direction D1 from the first main surface 21 of the mounting substrate 2 is lower than the height in the first direction D1 of at least one of the components disposed on the first main surface 21 of the mounting substrate 2 from the first main surface 21 of the mounting substrate 2.

[0135] In the high-frequency module 1c of Embodiment 7, the external shielding electrode 9 has a convex portion 93 on the surface facing the first main surface 21 of the mounting substrate 2, and the convex portion 93 includes a concave portion 91. One end 33 of the two ends of the shielding member 3 in the first direction D1 that does not contact the mounting substrate 2 is disposed in the concave portion 91 of the external shielding electrode 9. Therefore, the isolation between the electronic component 41 and the electronic component 51 can be ensured by the shielding member 3 and the external shielding electrode 9.

[0136] In addition, in the high-frequency module 1c of Embodiment 7, the height H1 of the shielding member 3 in the first direction D1 from the first main surface 21 of the mounting substrate 2 is lower than the height of at least one of the other electronic components disposed on the first main surface 21 of the mounting substrate 2. Therefore, the thickness of the high-frequency module 1c in the first direction D1 can be reduced. Therefore, the high-frequency module 1c can be miniaturized. In addition, when manufacturing the high-frequency module 1c, it is not necessary to grind the shielding member 3, and it is not necessary to change the height of the shielding member 3 in accordance with the heights of the electronic components 41, 51, and 52. Therefore, the manufacturing cost of the high-frequency module 1c can be reduced.

[0137] (2) Effects

[0138] In the high-frequency module 1c of Embodiment 7, the external shielding electrode 9 has a convex portion 93 facing the first main surface 21 of the mounting substrate 2. The concave portion 91 of the external shielding electrode 9 is located in the convex portion 93. Thus, in the high-frequency module 1c of Embodiment 7, the adhesion and connection reliability between the shielding member 3 and the external shielding electrode 9 are improved, and thus the shielding property of the external shielding electrode 9 is improved.

[0139] In addition, in the high-frequency module 1c of Embodiment 7, the height H1 of the shielding member 3 in the first direction D1 with respect to the first main surface 21 of the mounting substrate 2 is lower than the height H2 of at least one component other than the shielding member 3 disposed on the first main surface 21 of the mounting substrate 2 in the first direction D1 with respect to the first main surface 21 of the mounting substrate 2. Thus, according to the high-frequency module 1c of Embodiment 7, the height of the shielding member 3 can be made consistent among a plurality of high-frequency modules 1c having different heights of electronic components. Therefore, the manufacturing cost of the high-frequency module 1c can be reduced.

[0140] (Embodiment 8)

[0141] In the high-frequency module 1c of Embodiment 8, similar to the high-frequency module 1c of Embodiment 7, the height H1 of the shielding member 3 from the mounting substrate 2 is lower than the height of at least one of the other electronic components disposed on the first main surface 21 of the mounting substrate 2.

[0142] In addition, in the high-frequency module 1c of Embodiment 8, the uniformity of the thickness of the external shielding electrode 9 in the first direction D1 is relatively high. Thus, the external shielding electrode 9 has a recess 94.

[0143] Specifically, as Figure 11 shown, the external shielding electrode 9 has a convex portion 93 on the surface facing the first main surface 21 of the mounting substrate 2. In addition, the external shielding electrode 9 has a recess 94 that overlaps the convex portion 93 in the first direction D1.

[0144] In the high-frequency module 1c of Embodiment 8, the external shielding electrode 9 does not have a portion with a locally large thickness in the first direction D1. Therefore, the material of the external shielding electrode 9 can be reduced without reducing the electromagnetic shielding effect of the external shielding electrode 9. In addition, in the high-frequency module 1c of Embodiment 8, since the uniformity of the thickness of the external shielding electrode 9 in the first direction D1 is relatively high, it is easy to form the external shielding electrode 9 by vacuum evaporation or sputtering.

[0145] In addition, in the high-frequency module 1c of Embodiment 8, as Figure 12 shown, the thickness of the external shielding electrode 9 in the first direction D1 can also be reduced.

[0146] (Modification)

[0147] Hereinafter, a modification of the embodiment will be described.

[0148] The high-frequency module 1 according to Embodiments 1 to 8 may also include a plurality of power amplifiers 151. At least one of the plurality of power amplifiers 151 is included in the electronic component 41, for example. Similarly, the high-frequency module 1 according to Embodiments 1 to 8 may also include a plurality of low-noise amplifiers 152. At least one of the plurality of low-noise amplifiers 152 is included in the electronic component 51, for example.

[0149] Alternatively, the high-frequency module 1 according to Embodiments 1 to 8 may not include the low-noise amplifier 152 and may include a plurality of power amplifiers 151. At least one of the plurality of power amplifiers 151 is included in the electronic component 41, and at least one other of the plurality of power amplifiers 151 is included in the electronic component 51. In this structure, the high-frequency module 1 as a transmission module can improve the isolation degree between the plurality of power amplifiers 151.

[0150] In addition, in the high-frequency module 1 according to Embodiments 1 to 8, if the electronic component 6 is an element connected to the ground electrode 23, it may be an element other than a capacitor. For example, it may also be an IC including an inductor and a switch. Similarly, if the electronic components 6a and 6b are elements not connected to the ground electrode 23, they may also be filters, inductors, and capacitors.

[0151] In addition, in the high-frequency module 1 according to Embodiments 1 to 8, one or more electronic components may be arranged on the second main surface 22 of the mounting substrate 2.

[0152] In addition, in the high-frequency module 1 according to Embodiment 2 or 5, the shielding member 3 may not be connected to the ground electrode 23. Even in this case, the shielding member 3 and the external shielding electrode 9 achieve an electromagnetic shielding effect.

[0153] In addition, in the high-frequency module 1 according to Embodiments 4 to 8, the external shielding electrode 9 may be connected to the ground electrode 23 via the outer peripheral surface 29 of the mounting substrate 2.

[0154] (Form)

[0155] The high-frequency modules 1 to 1c according to the first form include a mounting substrate 2, first components 6 to 6b, and a shielding member 3. The mounting substrate 2 has a first main surface 21 and a second main surface 22. The first components 6 to 6b are arranged on the first main surface 21 of the mounting substrate 2. The shielding member 3 is arranged on the first main surface 21 of the mounting substrate 2. The first components 6 to 6b are in contact with the shielding member 3.

[0156] According to the high-frequency modules 1 to 1c according to the above form, when viewed from above in the thickness direction D1 of the mounting substrate 2, the first components 6 to 6b and the shielding member 3 can be arranged close to each other, so that the area of the mounting substrate 2 can be reduced. Therefore, the high-frequency modules 1 to 1c can be miniaturized.

[0157] In the high-frequency modules 1 and 1c of the second form, on the basis of the first form, the first component 6 has an electrode 61 connected to the mounting substrate 2. The shielding member 3 is in contact with the electrode 61 of the first component 6.

[0158] According to the high-frequency modules 1 and 1c of the above form, it is possible to reduce the deterioration of the characteristics of the high-frequency module caused by the parasitic capacitance generated between the first component 6 and the shielding member 3.

[0159] In the high-frequency modules 1 and 1c of the third form, on the basis of the second form, the mounting substrate 2 has a ground electrode 23. The electrode 61 of the first component 6 is connected to the ground electrode 23. The shielding member 3 is in contact with the electrode 24 of the mounting substrate 2 connected to the ground electrode 23.

[0160] According to the high-frequency modules 1 and 1c of the above form, the electrode 61 of the first component 6 can be connected to the ground electrode 23 via the shielding member 3. Therefore, the connectivity between the electrode 61 of the first component 6 and the ground electrode 23 is improved.

[0161] In the high-frequency modules 1a and 1c of the fourth form, on the basis of the first form, the shielding member 3 has a main surface 31 facing the first component 6a. An insulator 7 is disposed on the main surface 31 of the shielding member 3.

[0162] According to the high-frequency modules 1a and 1c of the above form, the first component 6a and the shielding member 3 can be insulated, so it is easy to contact and dispose the first component 6a and the shielding member 3. Therefore, it is easy to miniaturize the high-frequency modules 1a and 1c.

[0163] In the high-frequency module 1c of the fifth form, on the basis of the fourth form, it further includes a resin layer 8 that covers the mounting substrate 2 and the first component 6a. The material of the insulator 7 is different from the material of the resin layer 8. At least a part of the insulator 7 is located between the shielding member 3 and the first component 6a.

[0164] According to the high-frequency module 1c of the above form, the first component 6a can be protected by the resin layer 8, and the insulation between the first component 6a and the shielding member 3 can be improved by the insulator 7.

[0165] In the high-frequency modules 1 to 1c of the sixth form, on the basis of any one of the first form to the fifth form, it further includes a second component 41 and a third component 51. The second component 41 and the third component 51 are disposed on the first main surface 21 of the mounting substrate 2. A shielding member 3 is disposed between the second component 41 and the third component 51. At least one of the second component 41 and the third component 51 is a power amplifier 151 that amplifies the transmission signal.

[0166] According to the high-frequency modules 1 to 1c of the above-described configurations, the isolation between the second component 41 and the third component 51 is improved.

[0167] In the high-frequency module 1c of the seventh configuration, on the basis of any one of the first to sixth configurations, it further includes an external shielding electrode 9 that covers the first main surface 21 of the mounting substrate 2. The mounting substrate 2 has a ground electrode 23 connected to the shielding member 3. The shielding member 3 is in contact with the external shielding electrode 9.

[0168] According to the high-frequency module 1c of the above-described configuration, the external shielding electrode 9 can be connected to the ground electrode 23 via the shielding member 3. Therefore, the noise tolerance of the high-frequency module 1c is improved.

[0169] In the high-frequency module 1c of the eighth configuration, on the basis of the seventh configuration, the external shielding electrode 9 has a recess 91 facing the first main surface 21 of the mounting substrate 2. The shielding member 3 is in contact with the recess 91 of the external shielding electrode 9.

[0170] According to the high-frequency module 1c of the above-described manner, the contact area between the shielding member 3 and the external shielding electrode 9 is large, so the shielding performance of the external shielding electrode 9 is improved.

[0171] In the high-frequency module 1c of the ninth configuration, on the basis of the seventh or eighth configuration, the height H1 of the shielding member 3 in the first direction D1 with respect to the first main surface 21 of the mounting substrate 2 is higher than the height H2 of any component other than the shielding member 3 disposed on the first main surface 21 of the mounting substrate 2 in the first direction D1 with respect to the first main surface 21 of the mounting substrate 2. The first direction D1 is the thickness direction of the mounting substrate 2.

[0172] According to the high-frequency module 1c of the above-described configuration, the adhesion between the shielding member 3 and the external shielding electrode 9 is improved, so the shielding performance of the external shielding electrode 9 is improved.

[0173] In the high-frequency module 1c of the tenth configuration, on the basis of the eighth or ninth configuration, the external shielding electrode 9 has a convex portion 93 facing the first main surface 21 of the mounting substrate 2. The recess 91 of the external shielding electrode 9 is located in the convex portion 93.

[0174] According to the high-frequency module 1c of the above-described configuration, the adhesion between the shielding member 3 and the external shielding electrode 9 is improved, so the shielding performance of the external shielding electrode 9 is improved.

[0175] In the high-frequency module 1c of the eleventh embodiment, on the basis of the tenth embodiment, the height H1 of the shielding member 3 in the first direction D1 with respect to the first main surface 21 of the mounting substrate 2 is lower than the height H2 of at least one component other than the shielding member 3 disposed on the first main surface 21 of the mounting substrate 2 in the first direction D1 with respect to the first main surface 21 of the mounting substrate 2. The first direction D1 is the thickness direction of the mounting substrate 2.

[0176] According to the high-frequency module 1c of the above embodiment, the height of the shielding member 3 can be made consistent among a plurality of high-frequency modules 1c with different heights of electronic components. Therefore, the manufacturing cost of the high-frequency module 1c can be reduced.

[0177] The communication device 100 of the twelfth embodiment includes the high-frequency modules 1 to 1c of any one of the first to eleventh embodiments and a signal processing circuit 17 connected to the high-frequency modules 1 to 1c.

[0178] According to the communication device 100 of the above embodiment, miniaturization and high integration of the communication device 100 can be achieved by miniaturizing the high-frequency module 1.

Claims

1. A high frequency module, wherein: The high frequency module includes: A mounting substrate having a first main surface and a second main surface; a first component disposed on the first main surface of the mounting substrate; and a shielding member disposed on the first main surface of the mounting substrate, The first component is in contact with the shield member.

2. The high frequency module according to claim 1, wherein: The first component has an electrode connected to the mounting substrate, The shield member is in contact with the electrode of the first component.

3. The high frequency module according to claim 2, wherein: The mounting substrate has a ground electrode, The electrode of the first member is connected to the ground electrode, The shield member is in contact with an electrode of the mounting substrate connected to the ground electrode.

4. The high frequency module according to claim 1, wherein: The shield member has a main surface facing the first member, An insulator is disposed on the main surface of the shield member.

5. The high frequency module according to claim 4, wherein: The high frequency module further includes a resin layer covering the mounting substrate and the first component. The material of the insulator is different from the material of the resin layer, At least a portion of the insulator is located between the shield member and the first component.

6. The high frequency module according to claim 1, wherein: The high-frequency module further includes a second component and a third component, wherein the second component and the third component are arranged on the first main surface of the mounting substrate. The shielding member is arranged between the second component and the third component. At least one of the second component and the third component is a power amplifier that amplifies a transmission signal.

7. The high frequency module according to claim 1, wherein: The high-frequency module further includes an external shielding electrode, the external shielding electrode covering the first main surface of the mounting substrate. The mounting substrate has a ground electrode connected to the shield member. The shield member is in contact with the outer shield electrode.

8. The high frequency module according to claim 7, wherein: The outer shielding electrode has a recessed portion facing the first main surface of the mounting substrate. The shield member is in contact with the recessed portion of the outer shield electrode.

9. The high frequency module according to claim 8, wherein: The height of the shielding member in the thickness direction of the mounting substrate, i.e., the first direction, based on the first main surface of the mounting substrate is higher than the height of any component other than the shielding member arranged on the first main surface of the mounting substrate in the first direction based on the first main surface of the mounting substrate.

10. The high frequency module according to claim 8, wherein: The external shielding electrode has a protrusion facing the first main surface of the mounting substrate. The concave portion of the outer shielding electrode is located at the convex portion.

11. The high frequency module according to claim 10, wherein: The height of the shielding member in the thickness direction of the mounting substrate, i.e., the first direction, based on the first main surface of the mounting substrate is lower than the height of at least one component other than the shielding member arranged on the first main surface of the mounting substrate in the first direction based on the first main surface of the mounting substrate.

12. A communication device, wherein: The communication device comprises: The high frequency module according to any one of claims 1 to 11; and The signal processing circuit is connected to the high frequency module.

Images