Planar voice coil, planar voice coil substrate, and method for manufacturing planar voice coil substrate

The planar voice coil substrate is designed through semiconductor packaging technology, and the magnetic flux is increased by using spiral coil structures and magnetic components, which solves the existing voice coil structure volume and assembly problems, and realizes a thin and high-stability voice coil substrate.

CN120186534APending Publication Date: 2025-06-20PHOENIX PIONEER TECH
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Patent Information

Application Number
CN202311753317.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2023-12-19
Publication Date
2025-06-20

AI Technical Summary

Technical Problem

Due to physical limitations, the overall volume of the existing voice coil structure is not easy to shrink, which is not conducive to automated assembly.

Method used

Through the semiconductor packaging and loading plate process, a planar voice coil substrate is designed, including a dielectric layer, a patterned conductive layer, a magnetic metal and a conductor, and the magnetic flux is increased by using a helical coil structure and magnetic components to reduce the volume and weight of the voice coil.

Benefits of technology

The fine pitch coil and the planar coil substrate with good flatness are realized, reducing the volume and weight of the voice coil and improving the possibility of automated assembly.

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Abstract

The invention discloses a planar voice coil substrate which comprises a dielectric layer, a first patterned conductive layer, a first magnetic metal, a second patterned conductive layer and a second magnetic metal, wherein the first patterned conductive layer, the first magnetic metal, the second patterned conductive layer and the second magnetic metal are embedded in the dielectric layer. The first patterned conductive layer has a first spiral coil structure, and the first magnetic metal is disposed in the first spiral coil structure. The second patterned conductive layer has a second spiral coil structure disposed opposite to the first spiral coil structure, and the second magnetic metal is disposed in the second spiral coil structure. Wherein the first spiral coil structure and the second spiral coil structure form an electrical loop through the conductive element. In addition, the invention also discloses a planar voice coil applying the planar voice coil substrate and a manufacturing method of the planar voice coil substrate.
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Description

Technical Field

[0001] The present invention relates to a semiconductor device substrate and a manufacturing method thereof, and particularly to a planar voice coil, a planar voice coil substrate, and a manufacturing method of the planar voice coil substrate. Background Art

[0002] A voice coil is an electronic component mainly applied to microphones and speakers, which can provide a force through a magnetic field to vibrate a diaphragm to generate sound.

[0003] Please refer to Figure 1 As shown, an existing voice coil structure 10 includes a frame 11, a magnet 12, a coil 13, and a diaphragm 14. The magnet 12 and the coil 13 are disposed in an accommodation space through an opening of the frame 11. The diaphragm 14 is disposed outside the opening of the frame 11. The coil 13 is wound around the magnet 12. After power is supplied to the coil 13, a force F01 will be generated due to the interaction between the energized conductor and the magnetic field, and the magnitude of the force depends on the strength of the magnetic field.

[0004] However, the existing traditional voice coil structure 10 is formed by winding a wire around the magnet 12. In order to achieve sufficient magnetic field strength and force, such a winding structure will cause the overall volume to be difficult to reduce due to physical limitations, and is not conducive to automated assembly. Therefore, how to improve the problems of the above-mentioned prior art is one of the important current topics. Summary of the Invention

[0005] In view of the above, an object of the present invention is to provide a planar voice coil, a planar voice coil substrate, and a manufacturing method of the planar voice coil substrate, which can obtain a planar coil substrate with fine-pitch coils and good flatness through a semiconductor package carrier process.

[0006] To achieve the above object, a planar voice coil substrate of the present invention includes a dielectric layer, and a first patterned conductive layer, a first magnetic metal, a second patterned conductive layer, a second magnetic metal, a first conductor, and a second conductor embedded in the dielectric layer. The dielectric layer has a corresponding first surface and a second surface. The first patterned conductive layer has a first spiral coil structure, which is embedded in the dielectric layer adjacent to the first surface side, and both ends of the first spiral coil structure have a first end point and a second end point. The first magnetic metal is embedded in the dielectric layer and is in the same plane as the first patterned conductive layer, and is disposed within the first spiral coil structure. The second patterned conductive layer has a second spiral coil structure, which is embedded in the dielectric layer adjacent to the second surface side, and both ends of the second spiral coil structure have a third end point and a fourth end point. A fifth end point is disposed on one side of the second spiral coil structure and is opposite to the first end point. The second magnetic metal is embedded in the dielectric layer, is in the same plane as the second patterned conductive layer, and is disposed within the second spiral coil structure of the second patterned conductive layer. The first conductor is connected between the first end point and the fifth end point. The second conductor is connected between the second end point and the third end point. The fourth end point and the fifth end point are respectively connected to external electrical connection pads exposed on the second surface of the dielectric layer.

[0007] In one embodiment, the first magnetic metal and the second magnetic metal are connected and combined into one body by a third magnetic metal.

[0008] In one embodiment, the material of the first magnetic metal and / or the second magnetic metal is nickel, iron-nickel alloy or iron-cobalt-nickel alloy.

[0009] In addition, to achieve the above object, a planar voice coil of the present invention includes a frame, a diaphragm, and a first planar voice coil substrate. The frame has a side wall and a base, wherein the side wall and the base form an opening and an accommodating space. The diaphragm is disposed on the opening and covers the accommodating space. The first planar voice coil substrate is disposed on the side of the diaphragm opposite to the accommodating space, and is integrally combined and linked, and has the component composition and connection relationship of the planar voice coil substrate as described above.

[0010] In one embodiment, the planar voice coil further includes a magnetic element, which is disposed in the accommodating space opposite to the planar voice coil substrate and is combined with the base.

[0011] In one embodiment, the planar voice coil further includes a second planar voice coil substrate, which is disposed in the accommodating space opposite to the planar voice coil substrate combined on the diaphragm and is combined with the base. In addition, the second planar voice coil substrate also has the component composition and connection relationship of the planar voice coil substrate as described above.

[0012] Furthermore, to achieve the above object, a manufacturing method of a planar voice coil substrate of the present invention includes the following steps. Provide a carrier plate. Form a first dielectric layer on the carrier plate. Form a first patterned conductive layer on the first dielectric layer, wherein the first patterned conductive layer has a first spiral coil structure, and its two ends have a first end point and a second end point. Form a first magnetic metal on the first dielectric layer, and the first magnetic metal is disposed within the first spiral coil structure. Form a second dielectric layer to cover the first patterned conductive layer and the first magnetic metal. Form a first conductor in the second dielectric layer to connect to the first end point, and form a second conductor to connect to the second end point. Form a second patterned conductive layer on the second dielectric layer, wherein the second patterned conductive layer has a second spiral coil structure, and its two ends have a third end point and a fourth end point, the third end point is connected to the second conductor, and a fifth end point is disposed on one side of the second spiral coil structure and connected to the first conductor. Form a second magnetic metal on the second dielectric layer, and the second magnetic metal is disposed within the second spiral coil structure. Form a third dielectric layer to cover the second patterned conductive layer and the second magnetic metal. Form a pair of external electrical connection pads in the third dielectric layer to connect the fourth end point and the fifth end point respectively, wherein the external electrical connection pads are exposed on the third dielectric layer. Remove the carrier plate to form a planar voice coil substrate.

[0013] In one embodiment, the first patterned conductive layer or the second patterned conductive layer is formed by photolithography etching and electroplating. The first magnetic metal or the second magnetic metal is formed by photolithography etching and electroplating or sputtering.

[0014] In one embodiment, after forming the second dielectric layer, it further includes forming a third magnetic metal in the second dielectric layer, the third magnetic metal is stacked on the first magnetic metal, and when forming the second magnetic metal on the second dielectric layer, the second magnetic metal is stacked on the third magnetic metal. The first magnetic metal, the second magnetic metal, and the third magnetic metal are combined as a whole.

[0015] As described above, the planar voice coil, the planar voice coil substrate, and the manufacturing method thereof of the present invention use a semiconductor process to manufacture the planar voice coil substrate to replace the voice coil formed by directly winding wires on a magnet in the prior art. In this way, the magnetic flux can be increased through the planar voice coil substrate, and further, the volume and weight of the planar voice coil can be reduced. Description of the Drawings

[0016] Figure 1 A cross-sectional schematic diagram showing an existing voice coil structure; Figure 2 A cross-sectional schematic diagram showing a planar voice coil of the first embodiment of the present invention; Figure 3ASchematic diagram showing the relative positional relationship between the first patterned conductive layer and the first magnetic metal from a first perspective; Figure 3B Schematic diagram showing the relative positional relationship between the second patterned conductive layer and the second magnetic metal from a first perspective; Figure 4A Is Figure 3A And Figure 3B A cross-sectional schematic diagram of line segment BB in Figure 4B Is Figure 3A And Figure 3B A cross-sectional schematic diagram of line segment CC in Figure 5 A cross-sectional schematic diagram showing a first planar voice coil substrate of another preferred embodiment; Figure 6 A cross-sectional schematic diagram showing a planar voice coil of a second embodiment of the present invention; Figure 7 A cross-sectional schematic diagram showing a planar voice coil of a third embodiment of the present invention; Figures 8A to 8J Schematic diagram corresponding to the manufacturing method of the planar voice coil substrate of the preferred embodiment of the present invention.

[0017] Description of reference numerals 10: Voice coil structure 11: Frame 12: Magnet 13: Coil 14: Diaphragm F01: Acting force 20, 20A, 20B: Planar voice coil 21: Frame 211: Side wall 212: Base 213: Accommodating space 214: Opening 22: Magnetic element 23: Diaphragm 24, 24A: First planar voice coil substrate 241, 251: Dielectric layer 2411: First surface 2412: Second surface 241a: First dielectric layer 241b: Second dielectric layer 241c: Third dielectric layer 242, 252: First patterned conductive layer 2421: First spiral coil structure 2421a: First central part 2422: First end point 2423: Second end point 243, 253: First magnetic metal 244, 254: Second patterned conductive layer 2441: Second spiral coil structure 2441a: Second central part 2442: Third end point 2443: Fourth end point 2444: Fifth end point 245, 255: Second magnetic metal 246, 256: First conductor 247, 257: Second conductor 248, 258: External electrical connection pad 2481: First external electrical connection pad 2482: Second external electrical connection pad 249, 259: Third magnetic metal 25, 25A: Second planar voice coil substrate 29: Carrier plate op1: First opening op4: Fourth opening. Detailed implementation manners

[0018] In order to enable those with ordinary knowledge in the technical field to understand the content of the present invention and be able to implement the content of the present invention accordingly, the following is described in conjunction with preferred embodiments and the accompanying drawings.

[0019] Figure 2 A cross-sectional schematic diagram of a planar voice coil 20 showing a preferred embodiment of the present invention is presented. The planar voice coil 20 includes a frame 21, a magnetic element 22, a diaphragm 23, and a first planar voice coil substrate 24. Among them, the planar voice coil 20 can be applied to electronic devices such as microphones or speakers.

[0020] The frame 21 has a side wall 211 and a base 212. The side wall 211 stands and extends away from the base 212 at the periphery of the base 212. In this embodiment, the angle between the side wall 211 and the base 212 is 90 degrees. The shape of the base 212 can be generally circular, oval, rectangular, or any other possible geometric shape. The side wall 211 and the base 212 form an accommodation space 213 and an opening 214.

[0021] The magnetic element 22 is, for example, a magnet with magnetic properties, which is located in the accommodation space 213 and fixed on the base 212 of the frame 21. In one embodiment, the accommodation space 213 can be designed to be equivalent to the size of the magnetic element 22, so that the magnetic element 22 can be firmly fixed in the accommodation space 213. In one embodiment, the magnetic element 22 can be fixed to the base 212 or the side wall 211 by means of locking, clamping, bonding, etc.

[0022] The diaphragm 23 is connected to the periphery of the opening 214 to cover the accommodating space 213 , so that the magnetic element 22 is located between the diaphragm 23 and the frame 21 .

[0023] The first planar voice coil substrate 24 is disposed on one side of the diaphragm 23 opposite to the accommodation space 213. In this embodiment, the first planar voice coil substrate 24 is bonded to the diaphragm 23 by a bonding element, such as adhesive or double-sided tape, so that they are combined into one body and linked. In short, the first planar voice coil substrate 24 and the magnetic element 22 are disposed on both sides of the diaphragm 23.

[0024] For further details on the first planar voice coil substrate 24, please also refer to Figure 2 , Figure 3A , Figure 3B , Figure 4A and Figure 4B .in, Figure 2 The first planar voice coil substrate 24 shown in FIG. Figure 3A and Figure 3B In addition, in order to make the corresponding relationship between the components of the first planar voice coil substrate 24 clearer, Figure 4A is a cross-sectional diagram of line segment BB. Figure 4B It is a cross-sectional schematic diagram of the CC segment.

[0025] The first planar voice coil substrate 24 is a substrate made by a semiconductor process, and includes a dielectric layer 241 , a first patterned conductive layer 242 , a first magnetic metal 243 , a second patterned conductive layer 244 , a second magnetic metal 245 , a first conductor 246 , a second conductor 247 and a pair of external electrical connection pads 248 .

[0026] The dielectric layer 241 has a first surface 2411 and a second surface 2412 corresponding to each other, and its material includes but is not limited to Epoxy material, FR5 material, BT material, ABF (Ajinomoto Build-up film) or solid molding material (Epoxy Molding Compound, EMC) or PI, etc.

[0027] The first patterned conductive layer 242, the first magnetic metal 243, the second patterned conductive layer 244, the second magnetic metal 245, the first conductor 246, the second conductor 247, and the external electrical connection pad 248 are all embedded in the dielectric layer 241. The materials of the first patterned conductive layer 242, the second patterned conductive layer 244, the first conductor 246, the second conductor 247, and the external electrical connection pad 248 include, but are not limited to, copper. The materials of the first magnetic metal 243 and the second magnetic metal 245 include, but are not limited to, nickel, iron-nickel alloy, or iron-cobalt-nickel alloy.

[0028] In the dielectric layer 241, the first patterned conductive layer 242 and the second patterned conductive layer 244 are disposed opposite to each other and are located in different levels. Further, the first patterned conductive layer 242 and the first magnetic metal 243 are located in the same plane, which is on the side of the first surface 2411 of the dielectric layer 241 adjacent to, that is, close to the diaphragm 23. In addition, the second patterned conductive layer 244 and the second magnetic metal 245 are located in the same plane, which is on the side of the second surface 2412 of the dielectric layer 241 adjacent to, that is, away from the diaphragm 23.

[0029] Figure 3A And Figure 3B A schematic diagram of the first planar voice coil substrate 24 observed from a first perspective (a top view in this embodiment), where Figure 3A A schematic diagram showing the relative positional relationship between the first patterned conductive layer 242 and the first magnetic metal 243, Figure 3B A schematic diagram showing the relative positional relationship between the second patterned conductive layer 244 and the second magnetic metal 245.

[0030] As Figure 3A shown, the first patterned conductive layer 242 has a first spiral coil structure 2421 in a spiral shape, and has a first end point 2422 and a second end point 2423 at both ends of the first spiral coil structure 2421, respectively. The first magnetic metal 243 is located at a first central portion 2421a of the first spiral coil structure 2421, that is, at the center of the first spiral coil structure 2421.

[0031] Again, as Figure 3B shown, the second patterned conductive layer 244 also has a second spiral coil structure 2441 in a spiral shape, and has a third end point 2442 and a fourth end point 2443 at both ends of the second spiral coil structure 2441, respectively. The second magnetic metal 245 is located at a second central portion 2441a of the second spiral coil structure 2441, that is, at the center of the second spiral coil structure 2441. In addition, the second patterned conductive layer 244 further has a fifth end point 2444, which is disposed on one side of the second spiral coil structure 2441 and is opposite to the first end point 2422.

[0032] Next, referring simultaneously to Figure 2 and Figure 4A as shown, the first end point 2422 and the fifth end point 2444 are electrically connected to each other through the first conductor 246, and the second end point 2423 and the third end point 2442 are electrically connected to each other through the second conductor 247. Please refer again to Figure 2 and Figure 4B as shown, the external electrical connection pad 248 has a first external electrical connection pad 2481 and a second external electrical connection pad 2482. The first external electrical connection pad 2481 is disposed on the fourth end point 2443 and is electrically connected thereto, and an upper surface of the first external electrical connection pad 2481 is exposed on the second surface 2412 of the dielectric layer 241. The second external electrical connection pad 2482 is disposed on the fifth end point 2444 and is electrically connected thereto, and an upper surface of the second external electrical connection pad 2482 is exposed on the second surface 2412 of the dielectric layer 241.

[0033] Please refer again to Figure 2 as shown, the polarity of the side of the first magnetic metal 243 close to the diaphragm 23 is the same as the polarity of the side of the magnetic element 22 close to the diaphragm 23. In this embodiment, the N pole is taken as an example. In addition, the polarity of the side of the second magnetic metal 245 far from the diaphragm 23 is opposite to the polarity of the side of the first magnetic metal 243 close to the diaphragm 23, that is, the polarity of the side of the second magnetic metal 245 far from the diaphragm 23 is the S pole.

[0034] The present invention uses the first patterned conductive layer 242 and the second patterned conductive layer 244 to form a coil, and generates a magnetic field after applying a power supply, and then generates a repulsive phenomenon with the N pole or S pole of the magnetic element 22 to cause the diaphragm 23 to vibrate and generate audio. Among them, by controlling the input voltage to adjust the magnetic field strength, and then changing the magnitude of the force pushing the diaphragm 23, the high and low audio of the sound can be controlled.

[0035] In addition, by placing the first magnetic metal 243 and the second magnetic metal 245 with high magnetic permeability therein, the magnetic flux of the planar voice coil 20 can be increased, which can reduce the number of coils to achieve the same inductance value. In other words, the number of layers, volume and weight of the patterned conductive layer can all be reduced to produce a thin and light effect.

[0036] Figure 5 A first planar voice coil substrate 24A showing another preferred embodiment is shown. In this embodiment, the first planar voice coil substrate 24A further has a third magnetic metal 249, which is connected between the first magnetic metal 243 and the second magnetic metal 245. In other embodiments, the first magnetic metal 243, the second magnetic metal 245 and the third magnetic metal 249 may also be integrally formed elements.

[0037] Next, please refer to again Figure 6 As shown, the magnetic element 22 in the planar voice coil 20 can also be replaced with a second planar voice coil substrate 25 to form a planar voice coil 20A. The second planar voice coil substrate 25 is located in the accommodation space 213 and is fixed to the base 212 of the frame 21. In this embodiment, an adhesive element (not shown in the figure) is used to bond the second planar voice coil substrate 25 to the base 212.

[0038] The second planar voice coil substrate 25 includes a dielectric layer 251, a first patterned conductive layer 252, a first magnetic metal 253, a second patterned conductive layer 254, a second magnetic metal 255, a first conductor 256, a second conductor 257, and a pair of external electrical connection pads 258. Since the structure of the second planar voice coil substrate 25 can be the same as that of the first planar voice coil substrate 24, it will not be described in detail here.

[0039] It should be particularly noted that in the second planar voice coil substrate 25, the polarity of the side of the second magnetic metal 255 close to the diaphragm 23 is the same as the polarity of the side of the first magnetic metal 243 of the first planar voice coil substrate 24 close to the diaphragm 23, which is the N pole in this embodiment. In addition, in this embodiment, different polar magnetic fields can be generated by inputting currents in opposite directions to the first planar voice coil substrate 24 and the second planar voice coil substrate 25, and the diaphragm 23 can be vibrated to generate audio through the attraction or repulsion characteristics.

[0040] In addition, it should also be noted that the above-mentioned first planar voice coil substrate 24 and second planar voice coil substrate 25 are only taken as examples with two layers of patterned conductive layers. In other embodiments, more layers of patterned conductive layers can be designed according to requirements, which are not limited here.

[0041] Furthermore, please refer to again Figure 7 as shown Figure 6 The first planar voice coil substrate 24 and the second planar voice coil substrate 25 shown can also be replaced with the state of the first planar voice coil substrate 24A shown above Figure 5 as shown. As Figure 7 shown, a first planar voice coil substrate 24A of the planar voice coil 20B has a first magnetic metal 243, a third magnetic metal 249, and a second magnetic metal 245 that are interconnected. A second planar voice coil substrate 25A of the planar voice coil 20B has a first magnetic metal 253, a third magnetic metal 259, and a second magnetic metal 255 that are interconnected.

[0042] Next, taking the first planar voice coil substrate 20 as an example, please refer to Figures 8A to 8J to illustrate the manufacturing method of the planar voice coil substrate of the present invention. It should be noted that due to the perspective problem of some components, please refer to the above-mentioned attached Figure 1 and refer.

[0043] As Figure 8A shown, step S01 provides a carrier plate 29. Step S02 forms a first dielectric layer 241a on the carrier plate 29. Among them, the first dielectric layer 241a can be formed on the carrier plate 29 by film pressing.

[0044] As Figure 8B shown, step S03 forms a first patterned conductive layer 242 on the first dielectric layer 241a. The first patterned conductive layer 242 has a first spiral coil structure 2421, and both ends of the first spiral coil structure 2421 have a first end point 2422 and a second end point 2423. In this embodiment, the first patterned conductive layer 242 is formed by photolithography etching and electroplating copper.

[0045] Please refer to Figure 8B and Figure 8C shown, step S04 forms a first magnetic metal 243 on the first dielectric layer 241a. Among them, the first magnetic metal 243 can be formed at the position of the first central part 2421a of the first patterned conductive layer 242 by electroplating or sputtering process.

[0046] As Figure 8D shown, step S05 forms a second dielectric layer 241b to cover the first patterned conductive layer 242 and the first magnetic metal 243. Among them, the second dielectric layer 241b is formed by film pressing.

[0047] As Figure 8E shown, step S06 forms a first opening op1 and a second opening (not shown in the figure) in the second dielectric layer 241b. Among them, the first opening op1 corresponds to the first end point 2422 of the first patterned conductive layer 242, and the second opening corresponds to the second end point 2423. Among them, the first opening op1 and the second opening can be formed by laser drilling or etching technology.

[0048] As Figure 8FAs shown, in step S07, a first conductor 246 is formed in the first opening op1 and connected to the first end point 2422, and a second conductor is formed in the second opening and connected to the second end point 2423. The first conductor 246 and the second conductor are formed by photolithography etching and copper plating. Then, in step S08, a second patterned conductive layer 244 is formed on the second dielectric layer 241b. The second patterned conductive layer 244 has a second spiral coil structure 2441, and its two ends have a third end point 2442 and a fourth end point 2443. The third end point 2442 is connected to the second conductor 247. In addition, the second patterned conductive layer 244 also has a fifth end point 2444 disposed on one side of the second spiral coil structure 2441 and connected to the first conductor 246. In this embodiment, the second patterned conductive layer 244 is formed by photolithography etching and copper plating. It is worth mentioning that in different embodiments, the above steps S07 and S08 can be completed in one manufacturing step, and there is no limitation here.

[0049] Please refer to Figure 8F and Figure 8G As shown, in step S09, a second magnetic metal 245 is formed on the second dielectric layer 241b. In this embodiment, the second magnetic metal 245 can be formed at the position of the second central portion 2441a of the second spiral coil structure 2441 through an electroplating or sputtering process.

[0050] As Figure 8H shown, in step S10, a third dielectric layer 241c is formed to cover the second patterned conductive layer 244 and the second magnetic metal 245 by film pressing. In step S11, a third opening and a fourth opening op4 are formed on the third dielectric layer 241c. The third opening corresponds to the fourth end point 2443, and the fourth opening op4 corresponds to the fifth end point 2444. The third opening and the fourth opening op4 can be formed by laser drilling or etching technology.

[0051] As Figure 8I shown, in step S12, a pair of externally electrically connecting pads 248 are formed in the third opening and the fourth opening op4. In this embodiment, the externally electrically connecting pads 248 have a first externally electrically connecting pad 2481 and a second externally electrically connecting pad 2482. The first externally electrically connecting pad 2481 is connected to the fourth end point 2443, and the second externally electrically connecting pad 2482 is connected to the fifth end point 2444. In addition, the first externally electrically connecting pad 2481 and the second externally electrically connecting pad 2482 are exposed on the upper surface of the third dielectric layer 241c. The first dielectric layer 241a, the second dielectric layer 241b, and the third dielectric layer 241c constitute the aforementioned dielectric layer 241. Finally, as Figure 8J shown, in step S13, the carrier plate 29 is removed to form the planar voice coil substrate 20.

[0052] It is worth mentioning that in other embodiments, after forming the second dielectric layer in the foregoing step S05, an opening may be formed at a position corresponding to the first magnetic metal, and a third magnetic metal may be formed therein and stacked on the first magnetic metal to form the foregoing planar voice coil substrate having the first magnetic metal, the second magnetic metal, and the third magnetic metal.

[0053] In summary, the planar voice coil, the planar voice coil substrate, and the manufacturing method thereof of the present invention use a semiconductor process to manufacture the planar voice coil substrate and place a magnetic metal with high magnetic permeability therein, and have the following effects: (1) By disposing the magnetic metal at the central portion of the patterned conductive layer spiral coil structure, the magnetic flux of the planar voice coil can be increased, and then the number of coils can be reduced, which significantly helps to reduce the volume and weight of the planar voice coil and achieve the effect of being thin and light.

[0054] (2) Using the semiconductor process can enable the patterned conductive layer to have the characteristics of fine pitch and good flatness, so that the planar voice coil substrate has highly stable resistance and inductance value performance.

[0055] However, the above are only the preferred embodiments of the present invention, and naturally cannot limit the scope of the claims of this application. All equivalent modifications or changes made by those skilled in the art in accordance with the spirit of the present invention should be included within the scope of the claims.

Claims

1. A planar voice coil substrate, characterized in that, Comprising: A dielectric layer having a corresponding first surface and a second surface; A first patterned conductive layer having a first spiral coil structure embedded on the first surface side of the dielectric layer, and two ends of the first spiral coil structure having a first end point and a second end point; A first magnetic metal embedded in the dielectric layer, in the same plane as the first patterned conductive layer, and disposed within the first spiral coil structure; A second patterned conductive layer having a second spiral coil structure embedded on the second surface side of the dielectric layer, and two ends of the second spiral coil structure having a third end point and a fourth end point, and a fifth end point disposed on one side of the second spiral coil structure and opposite to the first end point; A second magnetic metal embedded in the dielectric layer, in the same plane as the second patterned conductive layer, and disposed within the second spiral coil structure of the second patterned conductive layer; A first conductor connected between the first end point and the fifth end point; And A second conductor connected between the second end point and the third end point; Wherein the fourth end point and the fifth end point are respectively connected to external electrical connection pads exposed on the second surface of the dielectric layer.

2. The planar voice coil substrate according to claim 1, characterized in that, The first magnetic metal and the second magnetic metal are connected and combined into one body by a third magnetic metal.

3. The planar voice coil substrate according to claim 1, characterized in that, The material of the first magnetic metal and / or the second magnetic metal is nickel, iron-nickel alloy or iron-cobalt-nickel alloy.

4. A planar voice coil, characterized in that, Comprising: A housing having a side wall and a base, the side wall and the base forming an opening and a receiving space; A diaphragm disposed at the opening and covering the receiving space; And A planar voice coil substrate as described in any one of claims 1 to 3, referred to as a first planar voice coil substrate, disposed on the side of the diaphragm opposite to the receiving space and integrally coupled and interlocked.

5. The planar voice coil according to claim 4, characterized in that, Further comprising a magnetic element disposed opposite to the first planar voice coil substrate in the receiving space and coupled to the base.

6. The planar voice coil according to claim 4, characterized in that, Further comprising another planar voice coil substrate as described in any one of claims 1 to 3, referred to as a second planar voice coil substrate, disposed opposite to the first planar voice coil substrate coupled to the diaphragm in the receiving space and coupled to the base.

7. A manufacturing method of a planar voice coil substrate, characterized in that, Comprising: Providing a carrier plate; Forming a first dielectric layer on the carrier plate; Forming a first patterned conductive layer on the first dielectric layer, wherein the first patterned conductive layer has a first spiral coil structure and its two ends have a first end point and a second end point; Forming a first magnetic metal on the first dielectric layer, and the first magnetic metal is disposed within the first spiral coil structure; Forming a second dielectric layer covering the first patterned conductive layer and the first magnetic metal; Forming a first conductor in the second dielectric layer and connecting it to the first end point, and forming a second conductor connecting it to the second end point; Forming a second patterned conductive layer on the second dielectric layer, wherein the second patterned conductive layer has a second spiral coil structure and its two ends have a third end point and a fourth end point, the third end point is connected to the second conductor, and a fifth end point is disposed on one side of the second spiral coil structure and connected to the first conductor; Form a second magnetic metal on the second dielectric layer, and the second magnetic metal is disposed within the second spiral coil structure; Form a third dielectric layer to cover the second patterned conductive layer and the second magnetic metal; Form a pair of externally electrically connected pads in the third dielectric layer to respectively connect the fourth terminal and the fifth terminal, wherein the pair of externally electrically connected pads are exposed on the third dielectric layer; and Remove the carrier plate.

8. The manufacturing method of a planar voice coil substrate according to claim 7, characterized in that, The first patterned conductive layer or the second patterned conductive layer is formed by photolithography etching and electroplating.

9. The manufacturing method of the planar voice coil substrate according to claim 7, characterized in that, The first magnetic metal or the second magnetic metal is formed by photolithography etching and electroplating or sputtering.

10. The manufacturing method of the planar voice coil substrate according to claim 7, characterized in that, After forming the second dielectric layer, it further includes: Form a third magnetic metal in the second dielectric layer, the third magnetic metal is stacked on the first magnetic metal, and the two are integrated; and When forming the second magnetic metal on the second dielectric layer, the second magnetic metal is stacked on the third magnetic metal, and the two are integrated.