Cup baffle for showerhead of substrate processing system

Abstract

A cup baffle for a showerhead of a substrate processing system includes a base plate disposed in an inflation portion of the showerhead to receive fluid from a stem portion of the showerhead, the base plate including an aperture for receiving a bracket element for coupling the base plate to at least one of a back plate or a face plate of the showerhead; and a peripheral lip on the base plate adjacent an outer peripheral edge of the base plate. The peripheral lip limits fluid flow over the peripheral edge of the cup baffle.

Description

Cross - Reference to Related Applications

[0001] This application claims priority to U.S. Provisional Application No. 63 / 419,124, filed on October 25, 2022. The entire disclosure of the above application is incorporated herein by reference. Technical Field

[0002] This disclosure relates to a baffle of a showerhead assembly in a substrate processing system. Background Art

[0003] The background description provided here is for the purpose of generally presenting the background of the disclosure. The work of the currently named inventors within the scope described in this background art section and aspects of the specification that were not prior art at the time of filing the application are neither expressly nor impliedly admitted to be prior art against the disclosure.

[0004] Substrate processing systems are used to perform processes such as depositing and etching films on substrates such as semiconductor wafers. For example, depositions can be performed to deposit conductive films, dielectric films, or other types of films, using chemical vapor deposition (CVD), plasma - enhanced CVD (PECVD), atomic layer deposition (ALD), plasma - enhanced ALD (PEALD), and / or other deposition processes. During deposition, the substrate is disposed on a substrate support (e.g., a pedestal), and one or more precursor gases can be supplied to the processing chamber using a gas distribution device (e.g., a showerhead) during one or more processing steps. In PECVD or PEALD processes, a plasma is used to initiate chemical reactions within the processing chamber during deposition. Summary of the Invention

[0005] Disclosed is a cup - shaped baffle for a showerhead of a substrate processing system. The cup - shaped baffle includes: a base plate disposed in an inflation portion of the showerhead to receive fluid from a stem portion of the showerhead, the base plate including holes for receiving support elements for coupling the base plate to at least one of a backplate or a panel of the showerhead; and a peripheral lip located on the base plate and adjacent to an outer peripheral edge of the base plate. The peripheral lip restricts fluid flow above the peripheral edge of the cup - shaped baffle.

[0006] In other features, the peripheral lip has a rectangular cross - section. In other features, the peripheral lip includes an inclined surface. In other features, the peripheral lip includes a rounded upper surface. In other features, the peripheral lip includes: a first peripheral edge having a rounded cross - section; and a second peripheral edge having a right - angled cross - section.

[0007] In other features, the peripheral lip has a stepped surface. In other features, the peripheral lip includes an inclined surface. In other features, the peripheral lip includes an inclined surface and a flat top surface.

[0008] Among other features, the width of the cross-section of the peripheral lip is less than a height of the peripheral lip. Among other features, the cup-shaped baffle includes a post hole for receiving a temperature measurement device post. Among other features, the peripheral lip extends upward from the base plate and is integrally formed with the base plate as a unitary component.

[0009] Among other features, a showerhead is disclosed and includes: a cup-shaped baffle; the backplate includes a fluid supply hole; the faceplate is attached to the backplate, and the faceplate and the backplate cooperate to define the plenum; and the stem includes a fluid passage that supplies the fluid to the plenum via the fluid supply hole. An exit area of the cup-shaped baffle is greater than a cross-sectional area of at least one of the fluid supply hole and the fluid passage, the exit area is cylindrical, and is equal to the product of: i) a distance between the peripheral lip and the backplate, and ii) at least one of an outer circumference of the cup-shaped baffle and an outer circumference of the uppermost peripheral edge of the peripheral lip.

[0010] Among other features, the height of the peripheral lip is less than a distance between the backplate and the base plate. Among other features, the showerhead further includes a temperature measurement device post for receiving a temperature measurement device, and the temperature measurement device post extends through a hole in the cup-shaped baffle.

[0011] Among other features, the temperature measurement device post extends from the faceplate and extends to the backplate. Among other features, a support element extends from at least one of the backplate and the faceplate. Among other features, the support element extends from the backplate and does not extend from the faceplate. Among other features, the exit area of the cup-shaped baffle is at least four times the cross-sectional area of at least one of the fluid supply hole and the fluid passage.

[0012] Among other features, a cup-shaped baffle for a showerhead of a substrate processing system is disclosed. The cup-shaped baffle includes a base plate and a peripheral lip. The base plate is disposed in a plenum of the showerhead and receives fluid from a stem of the showerhead. The base plate includes: a hole for receiving a support element for coupling the base plate to a backplate of the showerhead, and a post hole for receiving a temperature measurement device post. The peripheral lip is located on the base plate and adjacent to an outer peripheral edge of the base plate. The peripheral lip combines with the base plate to reduce turbulence in the fluid flow radially outward from the hole and the post hole and above the peripheral edge of the cup-shaped baffle.

[0013] Among other features, a showerhead is disclosed and includes the cup-shaped baffle; the backplate includes a fluid supply hole; a panel attached to the backplate, the panel being combined with the backplate to define the plenum; and the stem includes a fluid passage that supplies the fluid to the plenum via the fluid supply hole. The exit area of the cup-shaped baffle is larger than the cross-sectional area of at least one of the fluid supply hole and the fluid passage, the exit area is cylindrical, and is equal to the product of: i) the distance between the peripheral lip and the backplate, and ii) at least one of the outer perimeter of the cup-shaped baffle and the outer perimeter of the uppermost peripheral edge of the peripheral lip.

[0014] Among other features, the width of the cross-section of the peripheral lip is less than the height of the peripheral lip. The height of the peripheral lip is less than the distance between the backplate and the base plate. Among other features, the exit area of the cup-shaped baffle is at least four times the cross-sectional area of at least one of the fluid supply hole and the fluid passage.

[0015] Based on the detailed description, the claims, and the drawings, a further scope of applicability of the present disclosure will become apparent. The detailed description and specific examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The present disclosure will be more fully understood in light of the detailed description and the drawings, in which:

[0017] Figure 1 is an exemplary fluid velocity diagram that shows the fluid velocity of the fluid above the substrate and the fluid from a showerhead without a temperature measurement device (TMD) post;

[0018] Figure 2 is an exemplary fluid velocity diagram that shows the fluid velocity above the substrate and the fluid from a showerhead with a TMD post;

[0019] Figure 3 is a functional block diagram of a substrate processing system according to the present disclosure that includes a showerhead with a cup-shaped baffle;

[0020] Figure 4 is an exemplary controller and showerhead according to the present disclosure;

[0021] Figure 5 is a perspective view of a showerhead according to the present disclosure;

[0022] Figure 6 is Figure 5 a cross-sectional view of a portion of the showerhead that shows a cup-shaped baffle and a temperature measurement device post according to the present disclosure;

[0023] Figure 7 is Figure 5Cross-sectional view of another part of the nozzle, showing the dimensions of the cup-shaped baffle relative to the back plate;

[0024] Figure 8 Is a fluid flow diagram showing the fluid flow according to the present disclosure onto the cup-shaped baffle and through and over the peripheral lip of the cup-shaped baffle;

[0025] Figure 9 Is a fluid velocity diagram showing the fluid velocity above the substrate and from the nozzle having a cup-shaped baffle and TMD columns according to the present disclosure;

[0026] Figure 10 Is a side cross-sectional view of a part of a cup-shaped baffle according to the present disclosure, the cup-shaped baffle including a peripheral lip having a triangular cross-section;

[0027] Figure 11 Is a side cross-sectional view of a part of a cup-shaped baffle according to the present disclosure, the cup-shaped baffle including a peripheral lip having a hemispherical cross-section.

[0028] Figure 12 Is a side cross-sectional view of a part of a cup-shaped baffle according to the present disclosure, the cup-shaped baffle including a peripheral lip having a rounded inner peripheral edge and a right-angled outer peripheral edge;

[0029] Figure 13 Is a side cross-sectional view of a part of a cup-shaped baffle according to the present disclosure, the cup-shaped baffle including a peripheral lip having a right-angled inner peripheral edge and a rounded outer peripheral edge;

[0030] Figure 14 Is a side cross-sectional view of a part of a cup-shaped baffle according to the present disclosure, the cup-shaped baffle including a peripheral lip having an inclined cross-section;

[0031] Figure 15 Is a side cross-sectional view of a part of a cup-shaped baffle according to the present disclosure, the cup-shaped baffle including a peripheral lip having an inclined cross-section with a flat top;

[0032] Figure 16 Is a side cross-sectional view of a part of a cup-shaped baffle according to the present disclosure, the cup-shaped baffle including a peripheral lip having a right-angled inner peripheral edge and a downwardly inclined outer peripheral surface;

[0033] Figure 17 Is a side cross-sectional view of a part of a cup-shaped baffle according to the present disclosure, the cup-shaped baffle including a peripheral lip having a stepped inclined cross-section; and

[0034] Figure 18 Shows a method according to the present disclosure, the method operation including a substrate processing system with a cup-shaped baffle.

[0035] In the drawings, reference numerals may be reused to identify similar and / or identical elements. Detailed Description

[0036] A processing chamber of a substrate processing system generally includes a showerhead that is configured to deliver a gas mixture and that can function as an electrical power conductor. The showerhead may include a stem having an internal channel through which gas and precursors are supplied. The gas and precursors are received at a first end of the stem and are provided to the showerhead at a second end of the stem. The showerhead may include a baffle that is configured to restrict, distribute, and / or mix the gas and precursors within the showerhead. Electrical power applied to the showerhead may be used to generate a plasma between the showerhead and a substrate support, or for other aspects of the substrate processing system that require electrical power.

[0037] In addition to including a baffle, the showerhead may include corresponding support posts (or “stent elements”) that hold the baffle within an inflated portion between a backplate and a faceplate. The stent elements may be connected to the backplate and / or the faceplate. The baffle is suspended within the inflated portion and is located below an outlet of the stem, and receives fluid (gas and / or liquid) flowing through the stem. The fluid flows over and / or through the baffle to the perforated faceplate. The baffle may be non-perforated (i.e., without holes) or perforated (i.e., having one or more holes).

[0038] The showerhead may also include a temperature measurement device (TMD) that may be disposed within a post (referred to as a “TMD post”) that extends through the baffle and between the backplate and the faceplate. The TMD may be used to detect and adjust the temperature within the showerhead. Processing operations may also be adjusted based on the temperature detected by the TMD.

[0039] A stent element that is connected to the backplate and extends to the baffle may cause a low-pressure wake in the fluid flow through and above the baffle. The TMD post that extends from the backplate and through the baffle may also cause a low-pressure wake in the fluid flow through and above the baffle.

[0040] Reference Figure 1-2 to the fluid velocity diagrams of Figure 1 which show corresponding showerheads with corresponding baffles. For example, the fluid velocity at a region 1 mm above the substrate being processed may be estimated. Figure 1In [description], the fluid flow rates experienced by the display substrate are shown, with different regions experiencing different velocities depicted. Region 102 experiences the highest fluid flow rate and is related to the fluid flow on the peripheral edge of the baffle. Region 104 experiences the lowest fluid flow rate. Regions 105 and 106 experience fluid flow rates higher than those experienced in Region 104. Regions 108, 110, 112, and 114 experience fluid flow rates lower than that in Region 102 and higher than those in Regions 105 and 106.

[0041] Since there are no TMD columns in the nozzle, the fluid flow rate below the baffle (as shown in Region 105) is within the same fluid flow rate range. For example, each fluid flow rate experienced in Region 105 is less than or equal to 0.001 meters per second (m / s), which is different from the other fluid flow rates experienced in Region 105.

[0042] Figure 2 Exemplary fluid flow rate diagram 200 showing the axial fluid flow rate from a nozzle with TMD columns. In Figure 2 In [description], the fluid flow rates experienced by the display substrate are shown, with different regions experiencing different velocities depicted. Region 202 experiences the highest fluid flow rate. Region 202 is related to the fluid flow above the peripheral edge of the baffle. Region 204 experiences the lowest fluid flow rate. Region 206 experiences a fluid flow rate higher than that experienced in Region 204. Regions 208 and 210 experience fluid flow rates lower than that in Region 202 and higher than those in Region 206.

[0043] Since there are TMD columns in the nozzle, the fluid flow rate below and near the TMD column represented by Region 210 is lower than that in Region 206. Additionally, due to the low-pressure wake generated by the TMD column above the baffle, the fluid flow rate in Region 230 is lower than those in Regions 202 and 210.

[0044] Figure 2 The low fluid flow rate regions 210 and 230 will cause non-uniform deposition on the substrate being processed. This non-uniformity can occur across the substrate and lead to repeatability issues between substrates.

[0045] Examples presented herein include a showerhead assembly that includes a cup baffle and a TMD post. Each cup baffle has a peripheral annular portion (referred to as a "lip") that projects upward from a base (referred to as a "base plate"). The lip provides a restriction radially external to the TMD post and improves the uniformity of the fluid velocity flowing past the lip of the cup baffle. This restriction does not have a negative impact on the overall fluid flow, but rather causes the fluid flow to smoothly and uniformly flow over the peripheral lip of the cup baffle. Fluid is received from a stem pool in the cup baffle, which results in improved fluid pressure and flow rate uniformity prior to, above, and over the peripheral lip. The TMD posts disclosed herein are sized to minimize their impact on the fluid flow while maintaining the structural integrity of the TMD posts.

[0046] Figure 3 A substrate processing system 300 is shown that includes a showerhead having a cup baffle. Figure 3 Examples are applicable to PECVD chambers and other plasma-based substrate processing chambers. The substrate processing system 300 includes a processing chamber 304 that encloses other components of the substrate processing system 300. The substrate processing system 300 includes a first electrode 308 and a substrate support, such as a pedestal 312 that includes a second electrode 316. For example, the first electrode 308 may be an upper electrode. The second electrode 316 may be a lower electrode. During processing, a substrate 318 is disposed on the pedestal 312 between the first electrode 308 and the second electrode 316.

[0047] For example, the first electrode 308 may include a showerhead 324 that introduces and distributes process gas. In some examples, the showerhead 324 may not be configured for active temperature control. For example, the showerhead 324 is not configured to actively heat and / or cool (e.g., using a resistive heater, coolant flowing through a coolant channel, etc.). In other words, the showerhead 324 does not include an active heating component (e.g., an embedded resistive heater) and / or does not include an active cooling component (e.g., a channel configured to flow coolant through the showerhead 324).

[0048] The showerhead 324 includes a stem 321 that receives process fluid and directs the process fluid toward a cup baffle 323. The cup baffle 323 may be configured as any of the cup baffles disclosed herein. Other examples of cup baffles are shown in Figure 4 、 6 and 10-17. The cup baffle 323 may have various sizes, dimensions, and shapes. The cup baffle 323 may be located at various distances from the backplate 325. The cup baffle 323 may be held by a support element 327 connected to the backplate 325 (or connected to the panel 329), as shown.

[0049] The second electrode 316 can correspond to a conductive electrode embedded within a non-conductive portion of the susceptor 312. Alternatively, the susceptor 312 can include an electrostatic chuck that includes a conductive plate that serves as the second electrode 316.

[0050] When using plasma, a radio frequency (RF) generation system 326 generates an RF voltage and outputs it to the first electrode 308 and / or the second electrode 316. In some examples, one of the first electrode 308 and the second electrode 316 can be DC grounded, AC grounded, or at a floating potential. By way of example only, the RF generation system 326 can include one or more RF voltage generators 328 (e.g., a capacitively coupled plasma RF power generator, a bias RF power generator, and / or other RF power generators), such as an RF voltage generator 328 that generates an RF voltage. The RF voltage is fed by one or more matching and distribution networks 330 to the second electrode 316 and / or the first electrode 308. For example, as shown, the RF voltage generator 328 provides an RF and / or bias voltage to the second electrode 316. The second electrode 316 can alternatively or additionally receive power from another power source such as a power supply 332. In other examples, the RF voltage can be supplied to the first electrode 308, or the first electrode 308 can be connected to a ground reference.

[0051] An exemplary gas delivery system 340 includes one or more gas sources 344-1, 344-2, …, and 344-N (collectively gas sources 344), where N is an integer greater than zero. The gas sources 344 supply one or more gases (e.g., precursors, inert gases, etc.) and mixtures thereof. Vaporized precursors can also be used. At least one of the gas sources 344 can include a gas used in a pre-treatment process of the present disclosure (e.g., NH3, N2, etc.). The gas sources 344 are connected to a manifold 354 via valves 348-1, 348-2, …, and 348-N (collectively valves 348) and mass flow controllers 352-1, 352-2, …, and 352-N (collectively mass flow controllers 352). The output of the manifold 354 is fed to the processing chamber 304. For example, the output of the manifold 354 is fed to the showerhead 324.

[0052] In some examples, an optional ozone generator 356 can be disposed between the mass flow controllers 352 and the manifold 354. In some examples, the substrate processing system 300 can include a liquid precursor delivery system 358. The liquid precursor delivery system 358 can be incorporated within the gas delivery system 340 as shown, or can be external to the gas delivery system 340. The liquid precursor delivery system 358 is configured to provide precursors that are liquid and / or solid at room temperature via bubbling, direct liquid injection, vapor aspiration, etc.

[0053] The heater 360 can be connected to a heater coil 362 disposed in the base 312 to heat the base 312. The heater 360 can be used to control the temperature of the base 312 and the substrate.

[0054] The valve 364 and the pump 368 can be used to discharge reactants from the processing chamber 304. The controller 372 can be used to control various components of the substrate processing system 300. By way of example only, the controller 372 can be used to control the processing, the flow of carrier and precursor gases, the excitation and extinction of the plasma, the removal of reactants, the monitoring of chamber parameters, etc. The controller 372 can receive measurement signals via one or more sensors 374 disposed throughout the substrate processing system 300, which indicate processing parameters, conditions, etc. within the processing chamber 304.

[0055] The controller 372 according to the present disclosure is further configured to monitor the temperature of the showerhead 324. The controller 372 is further configured to adjust the process time (e.g., deposition time, cycle or duration) to compensate for changes in the showerhead temperature. For example, a TMD ( Figure 1 not shown) disposed in the TMD column 376 within the showerhead 324 is configured to monitor the temperature of the showerhead 324 during deposition. An example of a TMD column is shown in Figure 6-7 The TMD can be implemented as a thermocouple or other temperature measurement device. In one embodiment, the TMD includes an optical fiber line enclosed in a sheath that extends through the stem to a probe, which can be a ceramic phosphor tip. The sheath can be formed of stainless steel. This provides a rigid structure that can feed through the stem 321 and into the TMD column 376. In this implementation, the TMD can be easily accessed and maintained from the top of the stem 321. In another embodiment, the TMD includes a flexible line that feeds through the stem 321 and into the TMD column 376. The flexible line can have a temperature sensing element at the end of the line disposed in the TMD column 376.

[0056] The controller 372 receives a signal from the TMD indicating the showerhead temperature. The controller 372 is configured to selectively (e.g., periodically or continuously) determine and update the deposition time based on the monitored temperature of the showerhead 324, as described in more detail below. The controller 372 can also adjust other parameters based on the temperature, such as fluid flow rate, the temperature of the base 312, the power of the second electrode 316, etc.

[0057] Although the following describes a single processing chamber 304 and susceptor 312, the principles of the present disclosure may be implemented in systems including multiple processing chambers, and in processing chambers (e.g., a four-station module (QSM)) including multiple processing stations and susceptors. For example, each showerhead in the respective processing stations of a QSM may implement one or more sensors to monitor temperature and adjust deposition accordingly. In other words, the deposition time at each processing station may be independently adjusted to compensate for the temperature of each showerhead.

[0058] Figure 4 Shown is a controller 400, and a showerhead 402 in a processing chamber 404 having a stem 420 (collectively shown as 408). The controller 400 may replace Figure 3 controller 372. The controller 400 is configured to monitor the temperature of the showerhead 402. The showerhead 402 may not be configured for active temperature adjustment. For example, the showerhead 402 may not include a heater (e.g., a resistive heater). The controller 400 may adjust the length of the deposition period to compensate for changes in the showerhead temperature. The showerhead 402 is arranged to supply process gas to the processing chamber 404.

[0059] The showerhead 402 and the processing chamber 404 may correspond to a single processing station in a multi-station processing tool (e.g., a four-station module). The controller 400 may be configured to monitor the temperatures of multiple showerheads of each processing station and independently adjust the deposition time and / or other parameters, etc. in each processing station. Based on the monitored temperature of only one showerhead (e.g., showerhead 402), the controller 400 may adjust the deposition time and / or other parameters in multiple stations.

[0060] In this example, a TMD 416 passes through the stem 420 into a TMD column 424 of the showerhead 402. For example, one end of the TMD 416 is located near a faceplate 426 of the showerhead 402. In one embodiment, the TMD column 424 may be integrally formed with the faceplate 426 as a single component. In one embodiment, the stem 420, a backplate 428, a cup-shaped baffle 430, and the faceplate 426 are formed of the same material. For example, the stem 420, the backplate 428, the cup-shaped baffle 430, and the faceplate 426 may be formed of aluminum. The cup-shaped baffle 430 may be held by support elements 432, 434. Figure 4 Only two support elements are shown in, but three or more support elements may be used. For example, the support elements may be spaced 120° from each other with respect to a longitudinal centerline 436 extending through the center of the stem 420 and the showerhead 402. The support elements may be connected to the backplate 428 and / or the faceplate 426. In one embodiment, the support elements are connected to the backplate 428 rather than the faceplate 426. In another embodiment, the support elements are connected to the faceplate 426 rather than the backplate 428.

[0061] The controller 400 may include a temperature monitor 440, a deposition time determiner 442, and a deposition optimizer 444. The temperature monitor 440 receives and processes a signal from the TMD 416 indicating the temperature of the printhead 402. For example, the temperature monitor 440 may convert an analog signal into a digital signal indicating the temperature. The temperature monitor 440 outputs a signal indicating the sensed printhead temperature to the deposition time determiner 442.

[0062] The deposition time determiner 442 is configured to determine the deposition time of a deposition step based on the sensed printhead temperature. The deposition thickness may be directly related (e.g., linearly related) to the printhead temperature. For example, as the printhead temperature increases, the deposition thickness for a fixed deposition duration may also increase. Conversely, as the printhead temperature decreases, the deposition thickness for the same fixed deposition duration decreases. In some examples, the deposition thickness may decrease as the printhead temperature increases and increase as the printhead temperature decreases. The deposition time determiner 442 determines and selectively adjusts the deposition time to compensate for changes in the printhead temperature and achieve a desired deposition thickness.

[0063] In one example, the deposition time determiner 442 receives the printhead temperature and determines the deposition time before starting a deposition step or process. For example, after performing a deposition on a previous substrate, the deposition time determiner 442 determines the deposition time for the next substrate (i.e., between deposition steps performed sequentially on consecutive substrates). The deposition time determiner 442 determines the deposition time based on the printhead temperature and the desired deposition thickness. Alternatively, the deposition time determiner 442 determines an adjustment or offset (e.g., deposition time adjustment percentage, time offset, etc.) relative to a base or default deposition time. The deposition time determiner 442 provides deposition time information (e.g., the determined deposition time, deposition time adjustment, etc.) to the deposition optimizer 444. The deposition optimizer 444 controls the deposition step of the deposition duration based on the deposition information, such as controlling Figure 3 the operation of the gas delivery system 340, the RF generation system 326, the heater 360, the power supply 332, etc.

[0064] In another example, the deposition time determiner 442 continues to determine the deposition time based on the printhead temperature sensed and received during the deposition step. In other words, unlike determining the deposition time only once before starting the deposition step and performing the deposition step within the determined deposition time, the deposition time determiner 442 may further adjust the deposition time based on temperature changes during the deposition step (i.e., in real time while performing the deposition step).

[0065] The deposition time determiner 442 determines the deposition time based on data correlating the printhead temperature with the deposition rate, deposition thickness of a base deposition time, and the like. For example, the data corresponds to printhead temperature compensation data stored in the memory 446. In one example, the stored data may include a look-up table correlating the printhead temperature with the deposition rate, deposition thickness, deposition time for a desired deposition thickness, and the like. In another example, the stored data is a model or formula configured to determine the deposition time based on one or more inputs, the inputs including but not limited to the printhead temperature measured prior to the deposition step and a default or base deposition time.

[0066] The cup baffle 430 and the controller 400 are configured to improve deposition uniformity across the substrate. The cup baffle 430 presents a uniform fluid flow on the peripheral lip 431, thereby providing improved uniformity of the fluid flow pressure across the substrate to improve deposition uniformity. The controller 400 can also control the printhead temperature to improve deposition uniformity. In a substrate processing system, process uniformity can vary based on the temperature of a gas distribution device (e.g., a printhead configured to direct process gas, plasma, etc. into the processing chamber). The controller 400 adjusts deposition parameters such as, for example, the process time (e.g., deposition, time, cycle, or duration) to compensate for variations in the printhead temperature, rather than continuously adjusting the printhead temperature. In other words, instead of adjusting the printhead temperature (e.g., the system is not configured to actively adjust the printhead temperature using a controllable heater (e.g., a resistive heater)), the deposition time can be increased or decreased to compensate for changes in the deposition rate caused by variations in the printhead temperature. For example, the stored data can correlate the printhead temperature with the deposition time, deposition thickness of a base deposition time, deposition rate, and the like. As used herein, the base deposition time corresponds to the default deposition time for a desired deposition thickness. Thus, when monitoring variations in the printhead temperature before and / or during a deposition step, the deposition time can be automatically adjusted based on the variations in the printhead temperature.

[0067] Figure 5 An exemplary printhead 500 is shown, which includes a stem 502, a backplate 504, and a faceplate 506. The stem 502 includes a fluid inlet tube 510, an outer cylindrical housing (or tube) 512, and a TMD access channel 514. Any TMD mentioned herein can be disposed in a TMD post ( Figure 5 not shown in the figure) that is located between the plates 504, 506 and horizontally aligned with the TMD access channel 514. For example, the TMD can slide down along the TMD access channel 514 and can be inserted into the TMD post. Similarly, the TMD can be removed from the TMD post by pulling the TMD out of the TMD access channel 514.

[0068] Figure 6 is shown Figure 5Part 600 of the nozzle 500. Figure 5 The cup-shaped baffle 602 and the TMD post 604 are shown. The nozzle 500 includes a stem portion 502 having a fluid inlet tube 510 with a fluid passage 610, and an outer cylindrical housing 612 having a TMD access passage 614 for the TMD 616. The cup-shaped baffle 602 is held in the inflation portion 620 by a bracket element 622. As several examples, the cup-shaped baffle 602 can be welded to the bracket element 622 or held on the bracket element 622 via fasteners (such as screws). In one embodiment, the cup-shaped baffle 602 is welded to the TMD post 604 and welded and / or fastened to the bracket element 622. The fasteners can be screwed into the bracket element 622. The bracket element 622 can be integrally formed as part of the backplate 504 of the nozzle or attached to the backplate 504 (such as welded to the backplate 504). The cup-shaped baffle 602 can have a hole 623 through which a portion of the bracket element extends.

[0069] The cup-shaped baffle 602 includes a base plate 630 and a peripheral lip 632 extending upward from the base plate 630. The lip 632 is located on the base plate 630 and / or is integrally formed as part of the base plate 630. The lip 632 is adjacent to the outer peripheral edge 633 of the base plate 630. The lip 632 is shown as having a rectangular cross-sectional shape, but can have other cross-sectional shapes, such as Figure 10-17 as shown in. The combination of the lip 632 and the base plate 630 provides a collection area 634 for fluid received from the fluid passage 610 via a hole 635 in the backplate 504 of the nozzle. The hole 635 is horizontally aligned with the fluid passage 610. The fluid passage 610 has an inner diameter ID1.

[0070] The TMD post 604 can be integrally formed as part of the panel 506 as shown or attached to the panel 506. The TMD post 604 includes a first cylindrical portion 650 and a second cylindrical portion 652 having an outer diameter smaller than that of the first cylindrical portion 650, with exemplary diameters as Figure 7 shown. The second cylindrical portion 652 extends through a hole 654 in the cup-shaped baffle 602 and through a post hole 655 in the backplate 504 to the stem portion 502. The first cylindrical portion 650 and the second cylindrical portion 652 have corresponding internal channels 658, 660. The internal channels 658, 660 are horizontally aligned to allow insertion and removal of the TMD 616. The TMD 616 can be a thermocouple or other temperature measurement device. For example, the TMD can include a sheathed optical fiber extending to a temperature sensing element 662, such as a ceramic phosphor tip.

[0071] The faceplate 506 of the nozzle head 500 may include holes 670 of any pattern for outputting fluid from the plenum 620 downwardly toward the substrate being processed. The holes 670 may have various inner diameters. The TMD columns 604 are disposed between the holes 670. The bottom end 672 of the TMD column 604 may be tapered to have a diameter smaller than the diameter of the first cylindrical portion 650. This allows the TMD columns 604 to be disposed between those of the holes 670 that are close to each other. The stem portion 502, the backplate 504, the faceplate 506, the cup-shaped baffle 602, the TMD columns 604, and the support element 622 may be formed of the same material (e.g., aluminum).

[0072] Figure 7 Another portion 700 of the nozzle head 500 is shown, which shows the dimensions of the cup-shaped baffle 602 relative to the backplate 504. In Figure 7 it, the cup-shaped baffle 602 including the base plate 630 and the lip 632, the support element 622, and the TMD column 604 including the portions 650, 652, and the bottom end 672 are shown. The backplate 504 has holes 635 and 655.

[0073] The cup-shaped baffle 602 has a baffle height BH, a lip height LH, a lip width LW, an outer diameter OD1, and an inner lip diameter ID2. A first gap G1 exists between the base plate 630 and the backplate 504. A second gap G2 exists between the lip 632 and the backplate 504. The lip height LH is equal to the depth of the fluid collection region 634 of the cup-shaped baffle 602 and is less than the gap G1. The gap G1 is greater than the gap G2. For example, the gap G1 may be from 0.10 inches (in) to 0.50 inches (or from 2.54 millimeters (mm) to 12.70 mm). The lip width LW may be less than the lip height LH. For example, the lip height LH may be from 0.020 to 0.40 inches (or from 0.51 to 10 mm). For example, the lip width LW may be from 0.02 to 0.12 inches (or from 0.51 to 3.05 mm). For example, the outer diameter OD1 may be from 1.50 to 3.25 inches (or from 38.10 to 82.60 mm).

[0074] The first cylindrical portion 650 of the TMD post 604 has an outer diameter OD2 and a wall thickness WTl. The second cylindrical portion 652 has an outer diameter OD3 and a wall thickness WT2. The outer diameter OD2 can be greater than the outer diameter OD3 such that the TMD post is locked in the cup-shaped baffle 602 and the back plate 504 and between the cup-shaped baffle 602 and the panel 506. The wall thickness WT2 can be less than or equal to the wall thickness WT1. For example, each of the outer diameters OD2, OD3 can be 0.19 to 0.38 inches (or 4.83 to 9.65 mm). Although the ranges of OD2 to OD3 may be the same, OD3 is less than OD2. For example, the wall thicknesses WT1, WT2 can each be 0.03 to 0.12 inches (or 0.76 to 3.05 mm). Although the ranges of WT1, WT2 can be the same, WT2 is less than WT1. For example, the outer diameter of the bracket element 622 can be 0.18 to 0.40 inches (or 4.57 to 10.16 mm). The outer diameters OD2, OD3, OD4 and the wall thicknesses WT1, WT2 are minimized while maintaining the structural integrity of the TMD post 604. This minimizes the effect of the TMD post on the fluid flow rate.

[0075] In one embodiment, the lip height LH is less than the gap G2. In another embodiment, the lip height LH is greater than or equal to the gap G2. In one embodiment, the gap G2 is less than the base plate height BH. In one embodiment, the lip width LW is less than the lip height LH. In another embodiment, the lip width is greater than or equal to the lip height LH. In one embodiment, the gaps Gl and G2 are less than the distance between the cup-shaped baffle 602 and the panel 506.

[0076] The upper and lower portions of the outer peripheral side 640 of the cup-shaped baffle 602 are respectively the outer peripheral sides of the lip 632 and the base plate 630. The lip 632 is located on the base plate 630 and extends upward from the base plate 630, adjacent to the outer peripheral side (or edge) of the base plate 630, and can be integrally formed with the base plate 630 to provide a single component.

[0077] The lip 632 does not unduly restrict the fluid flow. The area of the cup-shaped baffle outlet (referred to as the outlet area) can be greater than at least one of the following: i) the cross-sectional area of the hole 635, and ii) Figure 6 the cross-sectional area of the fluid passage 610. The outlet area refers to the cylindrical area between the lip 632 and the back plate 504. The outlet area is equal to the product of: i) the gap G2 (or the distance between the lip 632 and the back plate 504), and ii) the outer perimeter of the cup-shaped baffle 602 and / or the outer perimeter of the outer edge and the uppermost peripheral edge of the lip 632. For example, the outlet area can be 0.42 square inches, and the cross-sectional area of the hole 635 can be 0.10 square inches. The hole 635 has an inner diameter ID3, which can be related to Figure 6is the same as the inner diameter ID1 of the fluid passage 610. For example, ID1 and ID3 can each be from 0.25 to 0.50 inches (or from 6.35 to 12.70 millimeters). In an exemplary embodiment, the outlet area is at least four times or more than at least one of: i) the cross-sectional area of the orifice 635, and ii) the cross-sectional area of the fluid passage 610.

[0078] The lip 632 acts as a weir and increases the restriction on the fluid flow downstream of the TMD post 604 and the support element 622. When the fluid jets out from the orifice 635 and upstream of the TMD post 604 and the support element 622, it may form turbulence and coalesce in the cup-shaped baffle 602 and flow smoothly over the lip 632. The lip 632 and the base plate 630 reduce the turbulence in the fluid flow above the cup-shaped baffle 602, which results in a more uniform fluid flow velocity at the peripheral edge of the cup-shaped baffle 602. This is shown in Figure 8 shown.

[0079] Figure 8 A fluid flow velocity diagram is shown, which shows the fluid flowing onto the cup-shaped baffle 802 and flowing over the peripheral lip 800 of the cup-shaped baffle 802. The fluid flows from the stem and through the orifice in the back plate to the central region 804 of the cup-shaped baffle 802. Then, the fluid radially disperses over the entire cup-shaped baffle 802, as shown by the radially extending arrow 806. The fluid flow velocity is smooth from the central region 804 to the inner circular region 810, which is adjacent to and radially within the lip 800. The fluid may be turbulent (i.e., have different fluid flow velocities) near the central region 804 and becomes less turbulent through the intermediate region 812. There may be a reduction in the fluid flow between one of the TMD posts 820 and the support element 822, as shown by the region 824. The velocity of the fluid flow on the lip 800 can be the same or similar. For example, the velocities can differ from each other by within 0.0002 to 0.0006 meters per second (m / s).

[0080] After the TMD post and / or the support element, there is no significant reduction in the fluid velocity. Some velocity differences are exhibited in the region associated with the TMD post and the support element, but these differences gradually disappear when the fluid reaches the lip 632.

[0081] Figure 9Displays a fluid velocity map 900, which shows the fluid velocity from a nozzle head having a cup-shaped baffle and a TMD column as disclosed herein. The fluid velocity at a region 1 mm above the substrate being processed can be estimated. The fluid velocity map 900 includes a region 902 associated with the TMD column, where the fluid velocity is less than that of region 904, which is associated with the fluid velocity above the lip of the cup-shaped baffle. Region 904 experiences the highest fluid velocity. Regions 906, 908 experience a fluid velocity less than that of region 904. Regions 910, 912 experience a fluid velocity less than that of regions 906, 908. Region 914 experiences a fluid velocity less than that of regions 910, 912.

[0082] Figure 10 Shows a portion 1000 of a cup-shaped baffle, which includes a peripheral lip 1002 having a triangular cross-section. The lip 1002 has a peripheral top edge 1004 and inclined sides 1006, 1008. Figure 11 Shows a portion 1100 of a cup-shaped baffle, which includes a peripheral lip 1102 having a hemispherical cross-section. The lip 1102 has a hemispherical top surface 1104.

[0083] Figure 12 Shows a portion 1200 of a cup-shaped baffle, which includes a peripheral lip 1202 having a rounded inner peripheral edge 1204 and a right-angled outer peripheral edge 1206. Figure 13 Shows a portion 1300 of a cup-shaped baffle, which includes a peripheral lip 1302 having a right-angled inner peripheral edge 1304 and a rounded outer peripheral edge 1306.

[0084] Figure 14 Shows a portion 1400 of a cup-shaped baffle, which includes a peripheral lip 1402 having an inclined cross-section with an outer peripheral edge 1404 that has an inclined inner surface 1406. Figure 15 Shows a portion 1500 of a cup-shaped baffle, which includes a peripheral lip 1502 having an inclined cross-section with a flat top 1504 and an inclined inner surface 1506.

[0085] Figure 16 Shows a portion 1600 of a cup-shaped baffle, which includes a peripheral lip 1602 having a right-angled inner peripheral edge 1604, a flat top surface 1605, and a downwardly inclined outer peripheral surface 1606. Figure 17 Shows a portion 1700 of a cup-shaped baffle, which includes a peripheral lip 1702 having a stepped inclined cross-section with a flat top surface 1704 and a stepped inclined surface 1706.

[0086] Figures 6 to 7 Examples are provided in FIGS. 6 - 7 and 10 - 17. The cup - shaped baffle can be implemented to have a lip, and the cross - sectional shape of the lip is different from that shown in FIGS. 6 - 7 and 10 - 17. In Figures 6 to 7 FIGS. 6 - 7, the shown lip has linear side surfaces that are at a 90° angle to each other. The side surfaces can be at different angles, curved, and / or have inner and outer edges of different shapes.

[0087] Figure 18 An exemplary method 1800 of operating a substrate processing system is shown, where the substrate processing system includes a cup - shaped baffle and a TMD post as disclosed herein. Other methods can be implemented. Method 1800 can include determining a deposition time. For example, Figure 3 a substrate processing system 300 (which can include a controller, and / or Figures 3 to 7 one of the nozzles, and / or Figures 10 to 17 one of the cup - shaped baffles) is configured to perform method 1800. At 1804, nozzle temperature compensation data is generated and stored. For example, as described above, the nozzle temperature compensation data is data that correlates nozzle temperature with deposition rate, deposition thickness for a base deposition time, etc. In one example, multiple substrates are processed (e.g., in consecutive deposition steps with the same deposition time), while monitoring the nozzle temperature. After deposition is complete, the deposition thickness of each substrate is measured. In this way, the corresponding nozzle temperature for each deposition thickness (at the same deposition time) can be determined.

[0088] At 1808, a substrate is set on a substrate support in a processing chamber configured to perform a deposition process on the substrate. At 1812, a controller 400 (e.g., a temperature monitor 440) determines the temperature of the nozzle in the processing chamber. For example, the temperature monitor 440 receives one or more signals from corresponding sensors (e.g., TMD 416) configured to sense the temperature of the nozzle.

[0089] At 1816, the controller 400 (e.g., a deposition time determiner 442) determines a deposition time based on the nozzle temperature. For example, the deposition time determiner 442 determines the deposition time based on stored data that correlates nozzle temperature with deposition time and / or thickness as described above. In one example, the stored data is a model or formula configured to determine an adjusted (i.e., optimized) deposition time DT' based on a base deposition time DT and a variable correction factor C according to DT' = DT*C. In some examples, the correction factor is inversely proportional to the nozzle temperature. Thus, when the nozzle temperature increases, the correction factor C decreases (e.g., starting from 1), and the optimized deposition time DT' decreases. In other examples, the correction factor is proportional to the nozzle temperature. Thus, when the nozzle temperature increases, the correction factor C increases, and the optimized deposition time DT' increases.

[0090] The correction factor C can be determined based only on the showerhead temperature, or based on the showerhead temperature and other inputs such as the accumulation amount (i.e., the measured or estimated amount of the accumulated by-products deposited in the process chamber), the substrate count (i.e., the number of substrates processed during a given sequence or time period that affects the showerhead temperature), etc.

[0091] At 1820, the controller 400 (e.g., the deposition optimizer 444) performs a deposition step for a duration corresponding to the determined optimized deposition time. For example, the deposition step is performed without preheating the showerhead. At 1824, the substrate is transferred out of the process chamber. At 1828, the controller 400 determines whether to perform deposition on another substrate. If yes (true), the controller 400 proceeds to 1808. If no (false), the method 1800 ends.

[0092] The examples presented herein improve wafer-to-wafer (WtW) film thickness uniformity across the wafer and reduce the percentage of within-wafer (WiW) film thickness non-uniformity. Exemplary cup baffles are minimized and / or fluid flow disturbances caused by the TMD posts and support elements are eliminated.

[0093] The foregoing description is merely illustrative in nature and is in no way intended to limit the present disclosure, its application, or uses. The broad teachings of the present disclosure can be implemented in a variety of forms. Thus, while the present disclosure includes specific examples, the true scope of the present disclosure should not be so limited since other modifications will become apparent upon study of the drawings, the specification, and the appended claims. It should be understood that one or more steps in a method can be performed in a different order (or simultaneously) without changing the principles of the present disclosure. Additionally, while each embodiment is described above as having certain features, any one or more of those features described with respect to any embodiment of the present disclosure can be implemented in and / or combined with the features of any other embodiment, even if the combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and permutations of one or more embodiments with each other remain within the scope of the present disclosure.

[0094] A variety of terms are used to describe the spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.), including terms such as "connected", "joined", "coupled", "adjacent", "next to", "on top of", "above", "below", and "disposed". Unless the relationship between the first and second elements is explicitly described as "direct", when describing such a relationship in the above disclosure, the relationship can be a direct relationship where there are no other intermediate elements between the first and second elements, but it can also be an indirect relationship where there is one or more intermediate elements between the first and second elements (spatially or functionally). As used herein, the phrase "at least one of A, B, and C" should be construed to mean a logical (A or B or C) using non-exclusive logical OR, and should not be construed to mean "at least one of A, at least one of B, and at least one of C".

[0095] In some implementations, the controller is part of a system, which can be part of the above examples. Such systems can include semiconductor processing equipment, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems can be integrated with electronics for controlling their operations before, during, and after the processing of semiconductor wafers or substrates. The electronics can be referred to as a "controller", which can control various components or sub-components of one or more systems. Depending on the processing requirements and / or system type, the controller can be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer in and out of tools and other transfer tools, and / or load locks connected or docked to specific systems.

[0096] Broadly speaking, a controller can be defined as an electronic device that has various integrated circuits, logic, memory, and / or software for receiving instructions, issuing instructions, controlling operations, enabling cleaning operations, enabling endpoint measurements, etc. The integrated circuits can include chips in the form of firmware that stores program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). The program instructions can be instructions sent to the controller in the form of various individual settings (or program files), and the individual settings (or program files) define the operating parameters for performing specific processes on or for a semiconductor wafer or system. In some embodiments, the operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or die of a wafer.

[0097] In some implementations, the controller can be part of or coupled to a computer that is integrated with, coupled to, otherwise networked to, or a combination of the system. For example, the controller can be in the "cloud" or be all or part of a fab host system, which can allow remote access to wafer processing. The computer can enable remote access to the system to monitor the current progress of manufacturing operations, examine the history of past manufacturing operations, examine trends or performance criteria for multiple manufacturing operations, change the parameters of the current process, set processing steps to follow the current process, or initiate a new process. In some examples, a remote computer (e.g., a server) can provide a process recipe to the system via a network (which can include a local network or the Internet). The remote computer can include a user interface that enables the input or programming of parameters and / or settings, and then sends the parameters and / or settings from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify the parameters for each processing step to be performed during one or more operations. It should be understood that the parameters can be specific to the type of process to be performed and the type of tool, and the controller is configured to interface with or control the tool. Thus, as described above, the controller can be distributed, for example, by including one or more discrete controllers that are networked together and work towards a common purpose (such as the processes and controls described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber that communicate with one or more integrated circuits remote (e.g., at the platform level or as part of a remote computer), which are combined to control the process on the chamber.

[0098] Example systems can include, but are not limited to, a plasma etch chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, an orbit chamber or module, and any other semiconductor processing system that can be associated with and / or used in the fabrication and / or preparation of semiconductor wafers.

[0099] As described above, depending on one or more processing steps to be performed by a tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a host computer, another controller, or a tool used in a material transport that shuttles a wafer container to and from a tool location and / or load port in a semiconductor manufacturing factory.

Claims

1. A cup-shaped baffle for a showerhead of a substrate processing system, the cup-shaped baffle comprising: A base plate, which is disposed in the inflatable portion of the nozzle to receive fluid from the stem of the nozzle, the base plate including a plurality of holes for receiving a plurality of support elements for coupling the base plate to at least one of a back plate or a panel of the nozzle, and; A peripheral lip, which is located on the base plate and adjacent to the outer peripheral edge of the base plate, the peripheral lip restricting the fluid flow on the peripheral edge of the cup-shaped baffle.

2. The cup-shaped baffle according to claim 1, wherein the peripheral lip has a rectangular cross-section.

3. The cup-shaped baffle according to claim 1, wherein the peripheral lip includes an inclined surface.

4. The cup-shaped baffle according to claim 1, wherein the peripheral lip includes a rounded upper surface.

5. The cup-shaped baffle according to claim 1, wherein the peripheral lip includes: A first peripheral edge having a rounded cross-section; And A second peripheral edge, The cross-section of which has a right angle.

6. The cup-shaped baffle according to claim 1, wherein the peripheral lip has a stepped surface.

7. The cup-shaped baffle according to claim 1, wherein the peripheral lip includes a plurality of inclined surfaces.

8. The cup-shaped baffle according to claim 1, wherein the peripheral lip includes an inclined surface and a flat top surface.

9. The cup-shaped baffle according to claim 1, wherein the width of the cross-section of the peripheral lip is less than the height of the peripheral lip.

10. The cup-shaped baffle according to claim 1, wherein the cup-shaped baffle includes a post hole for receiving a temperature measurement device post.

11. The cup-shaped baffle according to claim 1, wherein the peripheral lip extends upward from the base plate and is integrally formed with the base plate as a single piece.

12. A showerhead, comprising: The cup-shaped baffle according to claim 1; The back plate includes a fluid supply hole; The panel is attached to the back plate, and the panel is combined with the back plate to define the inflatable portion; And The stem includes a fluid channel for supplying the fluid to the inflatable portion via the fluid supply hole, Wherein, the outlet area of the cup-shaped baffle is greater than the cross-sectional area of at least one of the fluid supply hole and the fluid channel, the outlet area is cylindrical, and is equal to the product of: i) the distance between the peripheral lip and the back plate, and ii) at least one of the outer circumference of the cup-shaped baffle and the outer circumference of the uppermost peripheral edge of the peripheral lip.

13. The showerhead according to claim 12, wherein the height of the peripheral lip is less than the distance between the back plate and the base plate.

14. The showerhead according to claim 12, further comprising a temperature measurement device post for receiving a temperature measurement device, the temperature measurement device post extending through a hole in the cup-shaped baffle.

15. The showerhead according to claim 14, wherein the temperature measurement device post extends from the panel and extends to the backplate.

16. The showerhead according to claim 12, wherein the plurality of support elements extend from at least one of the backplate and the panel.

17. The showerhead according to claim 12, wherein the plurality of support elements extend from the backplate and do not extend from the panel.

18. The showerhead according to claim 12, wherein the outlet area of the cup-shaped baffle is at least four times the cross-sectional area of at least one of the fluid supply hole and the fluid passage.

19. A cup-shaped baffle for a showerhead of a substrate processing system, the cup-shaped baffle comprising: A base plate, which will be disposed in the inflatable portion of the nozzle to receive fluid from the stem of the nozzle, the base plate including: A plurality of holes for receiving a plurality of support elements for coupling the base plate to the back plate of the nozzle, and A column hole for receiving a temperature measurement device column; and A peripheral lip, which is located on the base plate and adjacent to the outer peripheral edge of the base plate, the peripheral lip being combined with the base plate to reduce the turbulence in the fluid flow radially outward from the plurality of holes and the column hole and above the peripheral edge of the cup-shaped baffle.

20. A showerhead, comprising: The cup-shaped baffle according to claim 19; The back plate includes a fluid supply hole; A panel attached to the back plate, the panel being combined with the back plate to define the inflatable portion; And The stem includes a fluid channel for supplying the fluid to the inflatable portion via the fluid supply hole, Wherein, the outlet area of the cup-shaped baffle is greater than the cross-sectional area of at least one of the fluid supply hole and the fluid channel, the outlet area is cylindrical, and is equal to the product of: i) the distance between the peripheral lip and the back plate, and ii) at least one of the outer circumference of the cup-shaped baffle and the outer circumference of the uppermost peripheral edge of the peripheral lip.

21. The showerhead according to claim 20, wherein: The width of the cross-section of the peripheral lip is less than the height of the peripheral lip; and The height of the peripheral lip is less than the distance between the back plate and the base plate.

22. The showerhead according to claim 20, wherein the outlet area of the cup-shaped baffle is at least four times the cross-sectional area of at least one of the fluid supply hole and the fluid passage.

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