Atomic layer deposition equipment
By setting multiple air extraction ports in the reaction chamber of the atomic layer deposition equipment and evenly distributing the air extraction capacity through the connecting pipeline, the problem of poor temperature uniformity in the sample placement area is solved, and the yield and performance of the deposited film are improved.
Patent Information
- Application Number
- CN202510299089.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-13
- Publication Date
- 2025-06-24
AI Technical Summary
In the existing atomic layer deposition equipment, the temperature uniformity of different areas of the sample placement area is poor, which affects the deposition process and film performance, resulting in a decrease in the deposition yield.
A plurality of air outlets are provided in the reaction chamber of the atomic layer deposition device. Each air outlet is connected to the pump port of the air pump through a corresponding first connecting pipe and the same second connecting pipe, so that the pumping capacity of the single air outlet is approximately the same, thereby improving the pumping efficiency and ensuring that the temperatures in different areas of the sample placement area are approximately the same.
By improving the extraction efficiency and temperature uniformity, the progress of the deposition process is improved, the yield and performance of the deposited film is improved, and cross-contamination and film defects are reduced.
Smart Images
Figure CN120193252A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of vapor deposition equipment, and in particular to an atomic layer deposition equipment. Background Art
[0002] The ALD (Atomic Layer Deposition) atomic layer deposition process is a method for precisely controlling the thickness and composition of a thin film at the micro-nano scale. The temperature in its reaction chamber has an important influence on the deposition process and the performance of the thin film. Specifically, during the atomic layer deposition process, the chemical reaction of a new atomic film layer is directly associated with the previous layer. This way enables each reaction to deposit only one atomic layer, so it is also called single atomic layer deposition. Moreover, atomic layer deposition continuously introduces at least two gaseous precursor species onto a substrate in a heated reactor, and the chemisorption process automatically terminates when the surface is saturated. Therefore, an appropriate process temperature hinders the physical adsorption of molecules on the surface, thereby affecting the deposition process and the performance of the thin film.
[0003] However, in the existing atomic layer deposition equipment, the temperature uniformity in different regions of the sample placement area is poor, which affects the progress of the deposition process and the performance of the thin film, resulting in a reduction in the deposition yield. Summary of the Invention
[0004] The purpose of the present invention is to provide an atomic layer deposition equipment, in which a plurality of air extraction ports are arranged in the reaction chamber, and each air extraction port is sequentially connected to the pump port of an air extraction pump through a corresponding first connecting pipe and the same second connecting pipe, so that the air extraction capabilities corresponding to individual air extraction ports are substantially the same, which is beneficial to improving the air extraction efficiency, making the temperatures in different regions of the sample placement area substantially the same, facilitating the progress of the deposition process, and improving the yield and performance of the deposited thin film.
[0005] To achieve the above purpose, the present invention provides an atomic layer deposition equipment, which includes: a reaction chamber, an air extraction pump, and a connecting pipeline. The reaction chamber has opposite first and second ends. An outlet source port is provided at the first end of the reaction chamber, and a plurality of air extraction ports are provided at the second end. The reaction chamber has a sample placement area located between the outlet source port and the air extraction ports. The connecting pipeline includes a plurality of first connecting pipes and one second connecting pipe that is simultaneously connected to the plurality of first connecting pipes. The plurality of first connecting pipes correspond to the plurality of air extraction ports one by one, and the second connecting pipe is connected to the pump port of the air extraction pump. Each air extraction port is sequentially connected to the pump port of the air extraction pump through a corresponding first connecting pipe and the same second connecting pipe.
[0006] In the case of adopting the above technical solution, in the atomic layer deposition equipment provided by the present invention, a plurality of air extraction ports are arranged at the second end of the reaction chamber to increase the air extraction efficiency in the reaction chamber, so that reaction by-products and unreacted precursors are discharged in time, preventing cross-contamination and film defects caused by the retention of the two in the chamber, and improving the yield and performance of the deposited film. In addition, during the actual manufacturing process, the temperature of the precursor entering the reaction chamber from the source port may be different from the reaction temperature in the reaction chamber. When the gas flow rates in different regions of the sample placement area are different, the temperature stability in different regions of the sample placement area may be poor. Based on this, in the reaction chamber included in the atomic layer deposition equipment provided by the present invention, each air extraction port is sequentially connected to the pump port of the same air extraction pump through a corresponding first connecting pipe and the same second connecting pipe, so that the air extraction capabilities corresponding to individual air extraction ports are substantially the same, which is conducive to making the gas flow rates in different regions of the sample placement area substantially the same, thereby making the temperatures in different regions of the sample placement area substantially the same, and further facilitating the deposition process, and further improving the yield and performance of the deposited film.
[0007] In one example, in the connecting pipeline, the lengths and / or diameters of different first connecting pipes are equal.
[0008] In one example, the shapes of different air extraction ports are the same.
[0009] In one example, the sizes of different air extraction ports are equal.
[0010] In one example, different air extraction ports are evenly distributed at the second end of the reaction chamber.
[0011] In one example, the distance between two adjacent air extraction ports is greater than or equal to one-third of the width of the sample placement area and less than or equal to one-half of the width of the sample placement area.
[0012] In one example, different air extraction ports are distributed in a straight line or arc shape at the second end of the reaction chamber with the midline along the width direction of the sample placement area as the symmetry line.
[0013] In one example, different air extraction ports are distributed in a circular or square shape at the second end of the reaction chamber. And, the straight line where the centers of different air extraction ports and the center of the source port are located is the midline of the reaction chamber.
[0014] In one example, the reaction chamber is provided with two air extraction ports symmetrically distributed with respect to the midline along the width direction of the sample placement area, and the connecting pipeline is in a Y shape.
[0015] In one example, the size of a single source port is larger than the size of a single air extraction port.
[0016] In one example, a flow controller and / or a flow detector are / is arranged on the connecting pipeline. Brief Description of the Drawings
[0017] The drawings described herein are provided to further understand the present invention and form a part of the present invention. The schematic embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation to the present invention. In the drawings:
[0018] Figure 1 is a schematic structural diagram of a reaction chamber in an atomic layer deposition apparatus provided by an embodiment of the present invention;
[0019] Figure 2 is a schematic diagram of the first distribution of different pumping ports in an embodiment of the present invention;
[0020] Figure 3 is a schematic diagram of the second distribution of different pumping ports in an embodiment of the present invention;
[0021] Figure 4 is a schematic diagram of the third distribution of different pumping ports in an embodiment of the present invention;
[0022] Figure 5 is a schematic structural diagram of a connection pipeline in an embodiment of the present invention.
[0023] Reference numerals: 11 is the reaction chamber, 12 is the source outlet, 13 is the pumping port, 14 is the sample placement area, 15 is the connection pipeline, 16 is the first connection pipe, and 17 is the second connection pipe. Detailed Embodiments
[0024] Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, it should be understood that these descriptions are only exemplary and are not intended to limit the scope of the present invention. In addition, in the following description, descriptions of well-known structures and technologies are omitted to avoid unnecessarily confusing the concepts of the present invention.
[0025] Various schematic structural diagrams according to embodiments of the present invention are shown in the drawings. These figures are not drawn to scale, where some details are enlarged for clearer expression and some details may be omitted. The shapes of various regions and layers shown in the figures, as well as their relative sizes and positional relationships, are only exemplary. In practice, there may be deviations due to manufacturing tolerances or technical limitations, and those skilled in the art can design regions / layers with different shapes, sizes, and relative positions according to actual needs.
[0026] In the context of the present invention, when a layer / component is referred to as being "on" another layer / component, the layer / component can be directly on the other layer / component, or there can be an intermediate layer / component between them. Additionally, if a layer / component is "on" another layer / component in one orientation, then when the orientation is reversed, the layer / component can be "under" the other layer / component. To make the technical problems, technical solutions, and beneficial effects to be solved by the present invention clearer and more understandable, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.
[0027] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, "a plurality of" means two or more, unless otherwise specifically defined. "Several" means one or more, unless otherwise specifically defined.
[0028] In the description of the present invention, it should be noted that unless otherwise clearly specified and limited, the terms "mounted", "connected", and "coupled" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two components or the interaction relationship between two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0029] The ALD (Atomic Layer Deposition) atomic layer deposition process is a method for precisely controlling the film thickness and composition at the micro-nano scale. It is a thin film deposition technology based on self-limiting surface reactions. The core principle of atomic layer deposition is to alternately introduce two or more precursor gases, enabling them to undergo chemical adsorption and reaction on the substrate surface, and growing a thin film with controllable thickness and excellent uniformity layer by layer. Compared with chemical vapor deposition (CVD), ALD has the following significant advantages: ① Atomic-level thickness control: The deposition thickness per single reaction cycle is usually 0.1 - 0.3 nm, enabling sub-nanometer precision. ② Excellent uniformity and conformality: Uniform thin films can be formed even on the surfaces of three-dimensional complex structures with a high aspect ratio (>100:1). ③ Compatibility with low-temperature processes: Some ALD reactions can be carried out below 100 °C, suitable for flexible substrates or heat-sensitive materials.
[0030] In an actual deposition process, the temperature in the reaction chamber of an atomic layer deposition apparatus has an important influence on the deposition process and the properties of the thin film. Specifically, in the atomic layer deposition process, the chemical reaction of the new atomic layer is directly associated with the previous layer. In this way, only one atomic layer is deposited in each reaction, so it is also called single atomic layer deposition. Moreover, atomic layer deposition continuously introduces at least two gaseous precursor species onto a substrate in a heated reactor, and the chemisorption process automatically terminates when the surface is saturated. Therefore, an appropriate process temperature hinders the physical adsorption of molecules on the surface, thereby affecting the deposition process and the properties of the thin film.
[0031] However, in existing atomic layer deposition apparatuses, the temperature uniformity in different regions of the sample placement area is poor, which affects the progress of the deposition process and the properties of the thin film, resulting in a decrease in the deposition yield.
[0032] To solve the above technical problems, an embodiment of the present invention provides an atomic layer deposition apparatus. A plurality of air extraction ports are provided in the reaction chamber of the atomic layer deposition apparatus, and each air extraction port is sequentially connected to the pump port of an air extraction pump through a corresponding first connecting pipe and the same second connecting pipe, so that the air extraction capabilities corresponding to single air extraction ports are substantially the same, which is conducive to improving the air extraction efficiency, making the temperatures in different regions of the sample placement area substantially the same, facilitating the progress of the deposition process, and improving the yield and properties of the deposited thin film.
[0033] Specifically, an embodiment of the present invention provides an atomic layer deposition apparatus. As Figures 1 to 5 shown, the atomic layer deposition apparatus includes: a reaction chamber 11, an air extraction pump, and a connecting pipeline 15. The reaction chamber 11 has opposite first and second ends. An outlet port 12 is provided at the first end of the reaction chamber 11, and a plurality of air extraction ports 13 are provided at the second end. The reaction chamber 11 has a sample placement area 14 located between the outlet port 12 and the air extraction ports 13. The connecting pipeline 15 includes a plurality of first connecting pipes 16 and a second connecting pipe 17 that is simultaneously communicated with the plurality of first connecting pipes 16. The plurality of first connecting pipes 16 correspond to the plurality of air extraction ports 13 one by one, and the second connecting pipe 17 is communicated with the pump port of the air extraction pump. Each air extraction port 13 is sequentially connected to the pump port of the air extraction pump through a corresponding first connecting pipe 16 and the same second connecting pipe 17.
[0034] In the actual application process, as described above, in the atomic layer deposition process, the chemical reaction of the new atomic layer is directly related to the previous layer. The atomic layer deposition process is to alternately introduce more than two gas-phase precursor sources into the reaction chamber through the source outlet, and perform chemisorption reactions on the surface of the deposition substrate to form a deposition film. By alternately adsorbing two substances, a and b, through chemical bonds, surface reaction growth is achieved. Moreover, atomic layer deposition has the characteristic of self-limitation, that is, within each pulse cycle, the gas-phase precursor can only react at the atomic bonding sites on the surface of the deposition substrate and just cover the substrate surface with a saturated amount, and can grow layer by layer atomically in a very wide process window. In the above deposition process, the air extraction holes in the reaction chamber are used to remove excess reaction gases and by-products. It can be understood that during the atomic layer deposition process, unreacted gases and by-products need to be removed after each reaction step to ensure the purity of the next layer of deposition and avoid cross-contamination. Based on this, as Figures 1 to 5 shown, in the atomic layer deposition equipment provided by the embodiment of the present invention, when a plurality of air extraction ports 13 are provided at the second end of the reaction chamber 11, the air extraction efficiency in the reaction chamber 11 can be increased, so that reaction by-products and unreacted precursors can be discharged in time, preventing cross-contamination and film defects caused by their retention in the cavity, and improving the yield and performance of the deposited film. Secondly, the air extraction holes are also used to maintain an appropriate pressure environment in the reaction chamber 11. The air extraction holes are connected to an air extraction pump through a connecting pipeline 15 to maintain the pressure required for deposition. Therefore, when a plurality of air extraction ports 13 are provided at the second end of the reaction chamber 11, it is also beneficial to maintain the pressure stability in the reaction chamber 11, beneficial to the diffusion of precursors and the uniformity of reactions, and beneficial to improving the quality and performance of the deposited film.
[0035] In addition, during the actual deposition process, the setting of the air extraction holes can also control the gas flow path and is beneficial to the mixing between different precursors. Moreover, the temperature of the precursor entering the reaction chamber from the source outlet may be different from the reaction temperature in the reaction chamber. When the gas flow rates in different regions of the sample placement area are different, it may lead to poor temperature stability in different regions of the sample placement area. Based on this, as Figures 1 to 5 shown, in the reaction chamber 11 included in the atomic layer deposition equipment provided by the embodiment of the present invention, each air extraction port 13 is sequentially connected to the pump port of the same air extraction pump through a corresponding first connecting pipe 16 and the same second connecting pipe 17, so that the air extraction capabilities corresponding to the individual air extraction ports 13 are substantially the same, which is beneficial to making the gas flow rates in different regions of the sample placement area 14 substantially the same, so that the temperatures in different regions of the sample placement area 14 are substantially the same; at the same time, it is also beneficial to uniformly cover the surface of the substrate with the precursor, avoid dead zones or gas retention, facilitate the deposition process, and facilitate the uniform deposition of a large-area substrate, further improving the yield and performance of the deposited film.
[0036] Specifically, the embodiments of the present invention do not specifically limit the specific structure of the reaction chamber, as long as it can be applied to an atomic layer deposition device.
[0037] Exemplarily, the reaction chamber may include a chamber body, an intake system, a substrate heating and support system, and a vacuum and exhaust system. Among them, the chamber body may be a chamber with a cylindrical or flat rectangular shape, etc. The material of the chamber may be stainless steel, aluminum alloy, quartz, or ceramic, etc. The specific source outlet and pumping port of the reaction chamber are arranged on the chamber body. The intake system can be connected to the reaction chamber through the source outlet. The substrate heating and support system is arranged in the sample placement area inside the chamber body, and is used to realize functions such as heating, supporting, and rotating the substrate. The vacuum and exhaust system includes a pumping pump, which is connected to the chamber body through the pumping port, and is used to control the environmental pressure inside the chamber body and discharge reaction by-products and unreacted precursors.
[0038] In some cases, the reaction chamber may further include an auxiliary function module, which has devices such as a plasma source and / or in-situ monitoring. Among them, the plasma source is integrated on the top or side wall of the chamber to generate plasma radicals to enhance low-temperature reactions. The in-situ monitoring device is used to monitor the curvature and growth rate of the thin film in real time, etc.
[0039] As for the specific structures of the chamber body, the intake system, the substrate heating and support system, the vacuum and exhaust system, and the auxiliary function module, they can be set according to actual needs and are not specifically limited here. The structures of the chamber body, the intake system, the substrate heating and support system, the vacuum and exhaust system, and the auxiliary function module are not the main features of the embodiments of the present invention. Therefore, in this specification, only a brief introduction is given to enable those of ordinary skill in the art to easily implement the embodiments provided by the present invention.
[0040] As for the source outlet arranged at the first end of the reaction chamber, the number thereof may be one or multiple. When there are multiple source outlets arranged at the first end of the reaction chamber, different source outlets can be evenly distributed at the first end to facilitate improving the uniformity of the deposited thin film. The specific arrangement manner of the multiple source outlets can be set according to actual needs and is not specifically limited here.
[0041] The source outlet can be in the shape of a circular opening, a rectangular opening, a diamond-shaped opening, an oval opening, or a pentagonal opening, etc. The shape of the source outlet can be set according to actual needs and is not specifically limited here.
[0042] In addition, as Figure 1 shown, the size of a single source outlet 12 can be larger than the size of a single pumping port 13 to facilitate improving the deposition rate. Of course, the size of a single source outlet 12 can also be less than or equal to the size of a single pumping port 13.
[0043] As for the multiple air extraction ports provided at the second end of the reaction chamber, in terms of shape, the air extraction ports can be circular ports, rectangular ports, rhombic ports, oval ports, pentagonal ports, etc. The shapes of different air extraction ports can be the same or different.
[0044] It should be noted that, as Figures 1 to 4 shown, when the shapes of different air extraction ports 13 are the same, it is beneficial to further make the air extraction effects within the unit areas of different air extraction ports 13 be approximately the same, and further improve the uniformity of the deposited thin film.
[0045] In terms of size, as Figures 1 to 4 shown, the sizes of different air extraction ports 13 can be equal, so as to make the air extraction effects within the unit areas of different air extraction ports 13 be approximately the same, and further improve the uniformity of the deposited thin film.
[0046] Of course, the sizes of different air extraction ports can also be unequal (for example, when the shapes of different air extraction ports are different), as long as it can make the air extraction effects of different air extraction ports be approximately the same.
[0047] In addition, the meaning represented by the size of the air extraction port can be determined according to the shape of the air extraction port. For example: when the air extraction port is circular, the size of the air extraction port refers to the diameter of the air extraction port. When the air extraction port is square, the size of the air extraction port is the side length or the diagonal length of the air extraction port.
[0048] As for the distance between two adjacent air extraction ports, it can be set according to the size of the reaction chamber and actual requirements, and no specific limitation is made here. For example: the distance between two adjacent air extraction ports can be greater than or equal to one-third of the width of the sample placement area and less than or equal to one-half of the width of the sample placement area.
[0049] In terms of arrangement, different air extraction ports can be randomly arranged at the second end within the reaction chamber. Or, as Figures 1 to 4 shown, different air extraction ports 13 can be evenly distributed at the second end of the reaction chamber 11.
[0050] As for the specific distribution of different air extraction ports at the second end of the reaction chamber, it can be set according to the surface topography at the second end of the reaction chamber, the number of air extraction ports, and actual requirements.
[0051] Exemplarily, as Figure 1 shown, different air extraction ports 13 are distributed in a straight line or an arc shape at the second end of the reaction chamber 11 with the midline along the width direction of the sample placement area 14 as the symmetry line. For example: when the surface at the second end of the reaction chamber 11 is an arc surface, different air extraction ports 13 are distributed in an arc shape at the second end of the reaction chamber 11 with the midline along the width direction of the sample placement area 14 as the symmetry line.
[0052] Exemplarily, asFigure 2 and Figure 4 As shown in Figure 4 , different air extraction ports 13 are distributed in a circular or square shape at the second end of the reaction chamber 11. Moreover, the straight line connecting the distribution centers of different air extraction ports 13 and the center of the source outlet 12 is the median line of the reaction chamber 11.
[0053] Exemplarily, as Figure 1 shown in Figure 1 , the reaction chamber 11 is provided with two air extraction ports 13 symmetrically distributed along the median line in the width direction of the sample placement area 14.
[0054] For the connecting pipeline, the connecting pipeline serves as the connection channel between the air extraction holes and the air extraction pump. The multiple first connecting pipes it includes correspond to the multiple air extraction ports one by one. Therefore, the number, distribution, and size of the first connecting pipes included in the connecting pipeline can be determined according to the number of air extraction ports, the distribution of different air extraction ports, and the size of different air extraction ports.
[0055] Exemplarily, as Figure 5 shown in Figure 5 , in the connecting pipeline 15, the lengths of different first connecting pipes 16 can be equal. With such a setting, it is beneficial to make the distances from different air extraction ports 13 through the corresponding first connecting pipes 16 and then through the same second connecting pipe 17 to the pump port of the air extraction pump the same, which is beneficial to providing approximately the same negative pressure for each air extraction port 13 when the air extraction pump is in operation, thereby enabling different air extraction ports 13 to have approximately the same air extraction effect and further improving the uniformity of the deposited film.
[0056] Of course, in the connecting pipeline, the lengths of different first connecting pipes can also be different (which is beneficial when the shapes of different air extraction ports are different).
[0057] Exemplarily, as Figure 5 shown in Figure 5 , in the connecting pipeline 15, the diameters of different first connecting pipes 16 can be equal. Specifically, it can refer to the diameters of the parts of different first connecting pipes 16 in the connecting pipeline 15 that are not docked with the air extraction ports 13 and the pump port of the air extraction pump. With such a setting, it is beneficial to make different air extraction ports 13 have approximately the same air extraction effect and further improve the uniformity of the deposited film.
[0058] As for the morphology of the connecting pipeline, since the multiple first connecting pipes included in the connecting pipeline correspond to the multiple air extraction ports one by one, and the multiple first connecting pipes are simultaneously connected to a second connecting pipe. Therefore, the morphology of the connecting pipeline can be determined according to the number of air extraction ports and the lengths and diameters of different first connecting pipes, and no specific limitation is made here.
[0059] For example: as Figure 5 shown in Figure 5 , when the reaction chamber 11 is provided with two air extraction ports 13, the connecting pipeline 15 can be in a Y shape.
[0060] In one example, a flow controller and / or a flow detector may be provided on the connecting pipeline. Specifically, a flow controller and / or a flow detector may be provided on each first connecting pipe, so as to facilitate providing substantially the same negative pressure for each air extraction port when the air extraction pump is in operation, thereby enabling substantially the same air extraction effect for different air extraction ports.
[0061] For the air extraction pump, the air extraction pump included in the atomic layer deposition equipment may be a dry mechanical pump, a turbo molecular pump, a cryogenic pump, a roots pump, a diaphragm pump, or other types of air extraction pumps. The embodiments of the present invention do not specifically limit the type of the air extraction pump, as long as it can be applied to the atomic layer deposition equipment.
[0062] In the above description, no detailed description is made of the technical details such as the composition and etching of each layer. However, those skilled in the art should understand that various technical means can be used to form layers, regions, etc. of the required shapes. In addition, in order to form the same structure, those skilled in the art can also design methods that are not exactly the same as the methods described above. In addition, although the above embodiments are described separately, this does not mean that the measures in each embodiment cannot be advantageously combined.
[0063] The above describes the embodiments of the present invention. However, these embodiments are only for clearer illustration and not for limiting the scope of the present invention. The scope of the present invention is defined by the appended claims and their equivalents. Without departing from the scope of the present invention, those skilled in the art can make various substitutions and modifications, and these substitutions and modifications should all fall within the scope of the present invention.
Claims
1. An atomic layer deposition device, characterized in that: include: Reaction chamber, vacuum pump, and connecting pipelines; The reaction chamber has a first end and a second end opposite to each other, the first end of the reaction chamber is provided with a source outlet, and the second end is provided with a plurality of gas extraction ports; the reaction chamber has a sample placement area located between the source outlet and the gas extraction port; The connecting pipeline includes multiple first connecting tubes and a second connecting tube that is simultaneously connected to the multiple first connecting tubes; the multiple first connecting tubes correspond one-to-one to the multiple air suction ports, and the second connecting tube is connected to the pump port of the air suction pump; each of the air suction ports is sequentially connected to the pump port of the air suction pump through the corresponding first connecting tube and the same second connecting tube.
2. The atomic layer deposition device according to claim 1, characterized in that: In the connecting pipelines, different first connecting pipes have the same length and / or diameter.
3. The atomic layer deposition device according to claim 1, characterized in that: The shapes of the different air extraction ports are the same; And / or, the sizes of the different air suction ports are equal.
4. The atomic layer deposition device according to claim 1, characterized in that: The different gas extraction ports are evenly distributed at the second end of the reaction chamber.
5. The atomic layer deposition device according to claim 1, characterized in that: The distance between two adjacent air extraction ports is greater than or equal to one third of the width of the sample placement area and less than or equal to one half of the width of the sample placement area.
6. The atomic layer deposition device according to claim 1, characterized in that: The different gas extraction ports are distributed at the second end of the reaction chamber in a straight line or an arc shape with the midline of the sample placement area along the width direction as the symmetry line.
7. The atomic layer deposition device according to claim 1, characterized in that: The different gas extraction ports are distributed in a circular or square shape at the second end of the reaction chamber, and a straight line where the distribution centers of the different gas extraction ports and the center of the source port are located is the center line of the reaction chamber.
8. The atomic layer deposition apparatus according to claim 1, characterized in that: The reaction chamber is provided with two gas extraction ports symmetrically distributed along the midline of the sample placement area in the width direction, and the connecting pipeline is Y-shaped.
9. The atomic layer deposition apparatus according to claim 1, characterized in that: The size of a single source outlet is larger than the size of a single air extraction outlet.
10. The atomic layer deposition device according to any one of claims 1 to 9, characterized in that: The connecting pipeline is provided with a flow controller and / or a flow detector.