An epitaxial growth method of a semiconductor compound

Abstract

The present invention provides an epitaxial growth method for a semiconductor compound. The gas injection device of the epitaxial growth equipment provided in this epitaxial growth method includes a compensation intake channel and a plurality of process intake channels. Using this epitaxial growth equipment, a first semiconductor material layer and a second semiconductor material layer with different compositions are sequentially grown on a substrate. During the growth process of the second semiconductor material layer, a detection device is used to obtain the growth rates of different regions of the second semiconductor material layer in the radial direction of the substrate. According to the growth rates, it is judged whether to introduce compensation gas through the compensation intake channel to synchronously perform gas compensation treatment, so that the epitaxial growth equipment can be applicable to the growth of different semiconductor material systems, which is beneficial to compatible with the growth processes of different semiconductor material layers, improve production efficiency and the uniformity of the semiconductor material layer.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor material preparation and processing, and particularly to an epitaxial growth method of semiconductor compounds. Background Art

[0002] High-temperature, high-frequency, radiation-resistant and high-power semiconductor devices have important application prospects in the fields of communication, solar energy, semiconductor lighting, smart grid, etc. The manufacturing processes of such semiconductor devices, such as manufacturing on hetero-substrates such as sapphire, silicon carbide, and silicon, introduce reactants by gas to establish a flow field in the reaction chamber, and the reactants grow a specific semiconductor material layer on the substrate surface. It is hoped to control the process to reduce the lattice mismatch and stress between the substrate and the semiconductor material layer to facilitate good growth quality.

[0003] The thickness uniformity of the semiconductor material layer directly affects the performance of the device. However, during the actual material growth process, due to changes in the delivery rates, viscosity coefficients, pre-reactions, etc. of each source material, the material thickness on the substrate at the circumferential positions in different radial directions of the carrier device will be inconsistent when growing the semiconductor material layer, and seriously, obvious problems will occur in the material layer uniformity within the same substrate, so that cumbersome process adjustments including airflow adjustment need to be made for the process, which is not conducive to improving production efficiency.

[0004] In addition, for the growth of different semiconductor material layers with similar processes, for example, for the growth of aluminum nitride layer and gallium nitride layer, the source material gas flow transport model suitable for growing gallium nitride is not suitable for the source material gas flow transport model of aluminum nitride. The migration rate of Al atoms is slow, while the migration rate of Ga atoms is fast. The pre-reaction of Al atoms is serious, while the pre-reaction of Ga atoms is slight. The incompatibility of different materials as described above even requires changing the structural design of the gas flow transport and correspondingly adjusting the parameters of the process, becoming two completely different reaction systems, which leads to a sharp increase in the material growth cost, and the secondary growth of different reaction systems will also have a fatal impact on the material quality. Summary of the Invention

[0005] The present invention provides an epitaxial growth method of a III-V group semiconductor compound, which is beneficial to compatible with the growth processes of different semiconductor material layers, and improves production efficiency and the uniformity of the semiconductor material layer.

[0006] To achieve the above object, the present invention provides an epitaxial growth method of a semiconductor compound, and the epitaxial growth method includes the following steps:

[0007] Provide an epitaxial growth device and a detection device, and the gas injection device of the epitaxial growth device includes a compensation air intake channel and a plurality of process air intake channels;

[0008] Place the substrate into the cavity of the epitaxial growth device;

[0009] Control the cavity to reach the first reaction temperature and the first reaction pressure, control the rotation of the substrate, and introduce a first source gas containing group III elements and a second source gas containing group V elements into the cavity through each of the process gas inlet channels to perform the growth process of the first semiconductor material layer on the substrate;

[0010] Control the cavity to reach the second reaction temperature and the second reaction pressure, and introduce a third source gas containing group III elements and a fourth source gas containing group V elements into the cavity through each of the process gas inlet channels to perform the growth process of the second semiconductor material layer on the substrate, wherein the group III element in the third source gas is different from the group III element in the first source gas;

[0011] During the growth process of the second semiconductor material layer, use the detection device to obtain the growth rates of different regions of the second semiconductor material layer in the radial direction of the substrate, and judge whether to introduce the third source gas or the fourth source gas into the cavity through the compensation gas inlet channel as a compensation gas to perform gas compensation treatment synchronously.

[0012] The beneficial effect of the epitaxial growth method of the semiconductor compound of the present invention is that the epitaxial growth device includes a compensation gas inlet channel and a plurality of process gas inlet channels. By setting the compensation gas inlet channel, during the growth process of the second semiconductor material layer, use the detection device to obtain the growth rates of different regions of the second semiconductor material layer in the radial direction of the substrate, and judge whether to introduce the third source gas or the fourth source gas into the cavity through the compensation gas inlet channel as a compensation gas to perform gas compensation treatment synchronously, so that the epitaxial growth device can be applicable to the growth of different semiconductor material systems, which is beneficial to compatible with the growth processes of different semiconductor material layers, and improves production efficiency and the uniformity of the semiconductor material layer.

[0013] Optionally, during the growth processes of the first semiconductor material layer and the second semiconductor material layer, control the substrate to rotate around the axis of the pedestal carrying the substrate at a rate of 800 - 1200 rpm.

[0014] Optionally, the first reaction temperature is 1000 - 1200 °C, and the first reaction pressure is 100 - 200 mbar; the second reaction temperature is 1000 - 1200 °C, and the second reaction pressure is 100 - 200 mbar.

[0015] Optionally, the ratio of the second source gas flow rate to the first source gas flow rate is 500:1 to 900:1, where the first source gas flow rate is 80 to 200 milliliters per minute, and the second source gas flow rate is 40 to 180 liters per minute.

[0016] Optionally, the compensation intake channel is provided in the area where the plurality of process intake channels are located. The number of the compensation intake channels is N. When N is 1, the compensation intake channel is located at the center of the gas injection device. When N is a natural number greater than 1, each of the compensation intake channels is arranged radially along the radial direction of the gas injection device starting from the center of the gas injection device.

[0017] Optionally, during the growth process of the second semiconductor material layer, the steps of obtaining the growth rates of the second semiconductor material layer in different regions in the radial direction of the substrate by using the detection device include:

[0018] Obtaining the material growth rate V of the substrate area corresponding to the (M - 1)-th compensation intake channel on the second semiconductor material layer by using the detection device M-1 , and obtaining the material growth rate V of the substrate area corresponding to the M-th compensation intake channel adjacent to the (M - 1)-th compensation intake channel M , where M is a positive integer greater than or equal to 2 and less than or equal to N, the (M - 1)-th intake area is closer to the center of the gas injection device than the M-th intake area, and N is a positive integer greater than or equal to 2;

[0019] Judging that V M-1 >V M After that, introducing the fourth source gas through the (M - 1)-th compensation intake channel and controlling the flow rate to be M M-1 =γ(1 - (V M / V M-1 ))M H ;

[0020] Judging that V M-1 <V M After that, introducing the third source gas through the (M - 1)-th compensation intake channel and controlling the flow rate to be M M-1 =γ((V M / V M-1 ) - 1)M O ;

[0021] Where γ is a compensation coefficient, γ = 0.8 to 1.2, M O is the flow rate of the third source gas, and M H is the flow rate of the fourth source gas.

[0022] Optionally, when N is a natural number greater than 1, the steps of determining that compensation gas needs to be introduced through the compensation gas inlet channels for synchronous gas compensation treatment according to the respective growth rates include:

[0023] Introduce the compensation gas through each compensation gas inlet channel, and control that in two adjacent compensation gas inlet channels, the flow rate of the compensation gas provided by the compensation gas channel closer to the middle of the gas injection device is greater than or equal to the flow rate of the compensation gas provided by the other compensation gas inlet channel.

[0024] Optionally, control the ratio between the flow rate of the third source gas introduced through each process gas inlet channel and the flow rate of the third source gas used as compensation gas introduced through each compensation gas inlet channel, and the ratio between the flow rate of the fourth source gas introduced and the flow rate of the fourth source gas used as compensation gas introduced through each compensation gas inlet channel to be 6:1 to 25:1.

[0025] Optionally, the flow rate of the third source gas used as compensation gas introduced through each compensation gas inlet channel is 20 to 60 ml / min, and the flow rate of the fourth source gas used as compensation gas introduced through each compensation gas inlet channel is 0.4 to 12 L / min.

[0026] Optionally, during the growth process of the second semiconductor material, control the flow rate M of the fourth source gas H and the flow rate M of the third source gas O The ratio M H :M O to be 35:1 to 150:1.

[0027] Optionally, in the growth process of the second semiconductor material, control the flow rate M of the third source gas O to be 500 to 1000 ml / min.

[0028] Optionally, the fourth source gas includes hydrogen and a source gas containing a group V hydride. During the growth process of the second semiconductor material, the flow rate of the source gas containing the group V hydride provided through each process gas inlet channel is 1 to 5 L / min, and the flow rate of the hydrogen is 30 to 70 L / min.

[0029] Optionally, at least three compensation gas channels are arranged in the same radial direction of the gas injection device, and the adjacent compensation gas inlet channels have the same spacing distance.

[0030] Optionally, at least two compensation gas channels are arranged in the same radial direction of the gas injection device, the distance between adjacent compensation gas channels is L1, the diameter of the carrier device for carrying the substrate in the epitaxial growth equipment is D, and the distance between the bottom surface of the gas injection device and the top surface of the substrate is H. The ratio of D to L1 is 3:1 to 20:1, and the ratio of D to H is 10:1 to 40:1.

[0031] Optionally, L1 is 30 to 70 millimeters, and H is 15 to 25 millimeters.

[0032] Optionally, the first source gas contains a gallium source, the second source gas and the fourth source gas both contain a nitrogen source or an arsenic source, and the third source gas contains an aluminum source. Description of the Drawings

[0033] Figure 1 It shows a schematic diagram of the distribution of each intake channel in the gas injection device of the epitaxial growth equipment provided by the present invention.

[0034] Figure 2 Shown as Figure 1 A schematic diagram of the distribution of the process intake channels of the gas injection device shown.

[0035] Figure 3 It shows a schematic diagram of the distribution of the process intake channels of the gas injection device in an optional embodiment.

[0036] Figure 4 It shows a schematic diagram of the distribution of the process intake channels and the compensation intake channels of the gas injection device in an optional embodiment.

[0037] Figure 5 It shows a schematic diagram of the distribution of the compensation intake channels of the gas injection device in some embodiments Figure 1 .

[0038] Figure 6 It shows a schematic diagram of the distribution of the compensation intake channels of the gas injection device in some embodiments Figure 2 .

[0039] Figure 7 It shows a schematic diagram of the distribution of the compensation intake channels of the gas injection device in some embodiments Figure 3 .

[0040] Figure 8 It shows a schematic diagram of the structure of the epitaxial growth equipment provided by the present invention.

[0041] Figure 9 Shown as Figure 8 A schematic diagram of the structure of the carrier device of the epitaxial growth equipment shown.

[0042] Figure 10Shown is a schematic structure of a gas injection device and a compensation gas supply channel in some embodiments Figure 1 .

[0043] Figure 11 Shown is a schematic structure of a gas injection device and a compensation gas supply channel in some embodiments Figure 2 .

[0044] Figure 12 Shown is a schematic structure of a gas injection device and a compensation gas supply channel in some embodiments Figure 3 .

[0045] Figure 13 Shown is a schematic diagram of each functional module in an epitaxial growth device.

[0046] List of component numbers:

[0047] 10. Epitaxial growth device, 100. Gas injection device; 101. First gas chamber; 102. Second gas chamber; 104. Chamber; 110. Body part; 111. Top; 112. Bottom; 120. Process gas inlet channel; 121. First process gas inlet channel; 122. Second process gas inlet channel; 130. Compensation gas inlet channel; 131. First compensation gas inlet channel; 132. Second compensation gas inlet channel; 1321. First part of the second compensation gas inlet channel; 1322. Second part of the second compensation gas inlet channel; 13N. Nth compensation gas inlet channel; 200. Carrying device; 201. Carrier area; 300. Substrate; 400. Rotating device; 500. Process gas supply channel; 501. First process gas supply channel; 502. Second process gas supply channel; 600. Compensation gas supply channel; 6000. Main pipeline; 601. First compensation gas supply channel; 602. Second compensation gas supply channel; 603. Third compensation gas supply channel; 600-1. First compensation branch pipeline; 600-2. Second compensation branch pipeline; 6001. First gas outlet branch pipeline; 6002. Second gas outlet branch pipeline; 6003. Third gas outlet branch pipeline. Detailed implementation manners

[0048] The following uses specific specific examples to illustrate the implementation manners of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation manners. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0049] The present invention provides an epitaxial growth method for a semiconductor compound. The epitaxial growth method includes the following steps:

[0050] An epitaxial growth device and a detection device are provided. A substrate is placed in the epitaxial growth device. The gas injection device of the epitaxial growth device includes each intake air passage composed of a plurality of process intake air channels and at least one compensation intake air channel. Each of the compensation intake air channels is provided in the area where the plurality of process intake air channels are located. In at least one of the compensation intake air channels, one of the compensation intake air channels is located at the center of the gas injection device;

[0051] Growing the first semiconductor material layer: controlling the temperature and pressure in the epitaxial growth device to reach the first reaction temperature and the first reaction pressure, controlling the rotation of the substrate, and introducing a first source gas containing group III elements and a second source gas containing group V elements into the cavity of the epitaxial growth device through each of the process intake air channels to perform the growth process of the first semiconductor material layer on the substrate;

[0052] Growing the second semiconductor material layer: at the second reaction temperature and the second reaction pressure, controlling the rotation of the substrate, and introducing a third source gas containing group III elements with a flow rate of M O and a fourth source gas containing group V elements with a flow rate of M H into the cavity through each of the process intake air channels to perform the growth process of the second semiconductor material layer on the substrate. The group III elements in the third source gas are different from the group III elements in the first source gas. The second reaction temperature is higher than the first reaction temperature, and the second reaction pressure is lower than the first reaction pressure;

[0053] During the growth process of the second semiconductor material layer, use the detection device to obtain the growth rates of the second semiconductor material layer in different regions in the radial direction of the substrate;

[0054] During the growth process of the second semiconductor material layer, determine whether to introduce a compensation gas through at least one of the compensation intake air channels to perform gas compensation treatment synchronously according to each of the growth rates. The compensation gas is the third source gas or the fourth source gas.

[0055] In an optional embodiment, during the growth process of the second semiconductor material layer, the step of using the detection device to obtain the growth rates of the second semiconductor material layer in different regions in the radial direction of the substrate includes:

[0056] Use the detection device to obtain the material growth rate V M-1 of the substrate area corresponding to the M-1th compensation intake air channel on the second semiconductor material layer, and obtain the material growth rate V M, M is a positive integer greater than or equal to 2 and less than or equal to N, the (M - 1)-th intake region is closer to the center of the gas injection device than the M-th intake region, and N is a positive integer greater than or equal to 2;

[0057] Judge V M-1 > V M After that, introduce the fourth source gas through the (M - 1)-th compensation intake channel and control the flow rate to be M M-1 = γ(1 - (V M / V M-1 ))M H ;

[0058] Judge V M-1 < V M After that, introduce the third source gas through the (M - 1)-th compensation intake channel and control the flow rate to be M M-1 = γ((V M / V M-1 ) - 1)M O ;

[0059] Among them, γ is a compensation coefficient, and γ = 0.8 to 1.2.

[0060] In an optional embodiment, when N is a natural number greater than 1, the steps of judging according to each of the growth rates and introducing compensation gas through at least one of the compensation intake channels for synchronous gas compensation treatment include:

[0061] Introduce the compensation gas through each compensation intake channel, and control that in two adjacent compensation intake channels, the compensation gas flow rate provided by the compensation gas channel closer to the middle of the gas injection device is greater than or equal to the compensation gas flow rate provided by the other compensation intake channel.

[0062] In an optional embodiment, the first source gas contains a gallium source, the second source gas and the fourth source gas both contain a nitrogen source or an arsenic source, and the third source gas contains an aluminum source.

[0063] As described above, the epitaxial growth method of the present invention first provides an epitaxial growth apparatus and a detection device. Specifically, the epitaxial growth apparatus may be a Chemical Vapor Deposition (CVD) apparatus or a Physical Vapor Deposition (PVD) apparatus. The epitaxial growth apparatus therein may be a Plasma-Enhanced Chemical Vapor Deposition (PECVD) apparatus, a Metal-organic Chemical Vapor Deposition (MOCVD) apparatus, etc. In this embodiment, the MOCVD apparatus is taken as an example for illustration. It should be understood that this apparatus is merely exemplary, and the epitaxial growth apparatus provided by the present invention is not limited to this one type of apparatus.

[0064] Combined with Figure 8 , the epitaxial growth apparatus 10 has a cavity 104. The cross-section of the cavity 104 is generally a circular or quasi-circular structure, or may be a rectangular structure and other structures well-known to those skilled in the art, which will not be elaborated herein. As Figure 1 and Figure 8 shown, in this embodiment, a gas injection device 100 is provided at the top of the cavity 104. The gas injection device 100 includes a body portion 110. The body portion 110 is disposed at the top of the cavity 104 and forms a sealed space with the cavity 104 and the carrier device 200 inside the cavity 104. This sealed space forms a reaction space for epitaxial growth.

[0065] As Figure 1 shown, the gas injection device 100 therein includes a body portion 110, a process gas inlet channel 120, and a compensation gas inlet channel 130. Among them, the process gas inlet channel 120 is used to provide process gases, and the compensation gas inlet channel 130 is used to provide compensation gases. For example, when growing a GaN material layer, a first source gas containing group III elements and a second source gas containing group V elements are provided via the process gas inlet channel 120; when growing an AlN material layer, a third source gas containing another group III element with a flow rate of M O and a fourth source gas containing group V elements with a flow rate of M H are provided via the process gas inlet channel 120. Among them, the above-mentioned second source gas and the fourth source gas may contain the same gas. Each source gas may be a mixed gas of multiple gases, such as a mixed gas of a carrier gas and a reaction gas or a mixed gas of multiple reaction gases of the same type.

[0066] As Figure 1As shown, the body part 110 is a solid structure with a certain thickness, and has a top 111 and a bottom 112 arranged opposite to each other. The process gas inlet channel 120 penetrates the body part 110 from the top 111 to the bottom 112, and supplies process gas in the direction from the top 111 to the bottom 112. The gas outlet of the process gas inlet channel 120 is located on the side of the bottom 112 of the body part 110. The process gas contains source material gas for epitaxial growth to form a single crystal thin film. For example, when growing GaN, AlN, GaAs material layers, the process gas includes a metal organic compound source containing a gallium source or an aluminum source and a hydride gas, and a source gas containing a nitrogen source or an arsenic source, and also includes hydrogen required for the growth of the material layer, etc.

[0067] In the growth process, the reaction temperature is controlled to be 700 - 1200 degrees Celsius, and the reaction pressure is 50 - 200 mbar. Further, in the growth processes of different semiconductor material layers, the above reaction temperature and reaction pressure can remain unchanged, or the reaction temperature and / or reaction pressure can be selectively changed according to the type of the semiconductor material layer. Taking the growth of two different semiconductor material layers as an example, when growing the first semiconductor material layer (such as GaN), the ratio of the flow rate of the second source gas to the flow rate of the first source gas is 500:1 - 900:1. Further, the flow rate of the first source gas is controlled to be 80 - 200 ml / min, and the flow rate of the second source gas is 40 - 180 l / min; when growing the second semiconductor material layer (such as AlN), the flow rate M of the fourth source gas H and the flow rate M of the third source gas O The ratio M H :M O is 35:1 - 150:1. Further, the flow rate M of the third source gas is controlled to be O 500 - 1000 ml / min, and the flow rate M of the fourth source gas His 35 to 75 liters per minute. In an optional embodiment, both the second source gas and the fourth source gas include hydrogen gas and a source gas containing a group V hydride, such as a nitrogen source or an arsenic source. During the growth process of the second semiconductor material, the flow rate of the source gas containing a group V hydride provided through each process gas inlet channel is 1 to 5 liters per minute, and the flow rate of hydrogen gas is 30 to 70 liters per minute. When performing gas compensation treatment, the ratio of the flow rate of the third source gas introduced through each process gas inlet channel 120 to the flow rate of the third source gas introduced through each compensation gas inlet channel 130 as a compensation gas is 6:1 to 25:1, and the ratio of the flow rate of the fourth source gas introduced through each process gas inlet channel 120 to the flow rate of the fourth source gas introduced through each compensation gas inlet channel 130 as a compensation gas is also 6:1 to 25:1. Further, the flow rate of the third source gas introduced through each compensation gas inlet channel as a compensation gas is 20 to 60 milliliters per minute, and the flow rate of the fourth source gas introduced through each compensation gas inlet channel as a compensation gas is 0.4 to 12 liters per minute.

[0068] The above-mentioned process gas inlet channels 120 are uniformly distributed in the body part 110, and can be formed into a hole structure or a slit-like structure. In an optional embodiment, as Figure 2 shown, the process gas inlet channels 120 are formed into a circular hole structure and are uniformly distributed in the body part 110. Figure 2 The process gas inlet channels 120 shown are formed into circular hole structures with different pore diameters. It can be understood that the process gas inlet channels 120 can be set to different types according to the types of source material gases provided.

[0069] Taking the growth of a GaN material layer and / or an AlN material layer as an example, the process gas inlet channels 120 include a first process gas inlet channel 121 and a second process gas inlet channel 122 that respectively provide a metal organic compound source and a hydride gas. As Figure 2 shown, the one with a larger pore diameter is the first process gas inlet channel 121 as the gas supply channel for the metal organic compound source, and the one with a smaller pore diameter is the second process gas inlet channel 122 as the gas supply channel for the hydride gas. The above-mentioned first process gas inlet channel 121 and second process gas inlet channel 122 can be uniformly distributed in an interlaced manner to form an air curtain, or can be dispersed. For example Figure 2 shown, the first process gas inlet channel 121 and the second process gas inlet channel 122 are respectively arranged in a one-word interlaced pattern and form multiple rows. Or, optionally, as Figure 3 shown, the first process gas inlet channel 121 and the second process gas inlet channel 122 are respectively arranged in a circumferential interlaced pattern along different radii of the body part 110.

[0070] It is understandable that, in order to avoid unnecessary mixing or reaction of each source material gas before entering the reaction space, the process gas inlet channels 120 of different source material gases are not connected to each other. As Figure 1 shown, a first gas chamber 101 connected to the first process gas inlet channel 121 can be formed in the main body portion 110. The first gas chamber 101 is located in a radial plane of the main body portion 110 and connects all the first process gas inlet channels 121. At the same time, a second gas chamber 102 is also formed in the main body portion 110. The second gas chamber 102 is located in another radial plane of the main body portion 110, connects the second process gas inlet channels 122, and is not connected to the first gas chamber 101. Thus, independent gas inlet of the first process gas inlet channel 12, and the second process gas inlet channel 122 is achieved, without interference with each other.

[0071] Referring again to Figure 1 , in this embodiment, in order to compensate for the thickness or growth rate non-uniformity existing in the growth process of the semiconductor material layer, a compensation gas inlet channel 130 is provided. The compensation gas inlet channel 130 is used to supply compensation gas. The supplied compensation gas can be the above-mentioned metal organic compound source or a hydride gas. In this embodiment, N compensation gas inlet channels 130 are provided in the main body portion 110, where N is a natural number greater than or equal to 1. The compensation gas inlet channel 130 penetrates the main body portion 110 along the direction from the top 111 to the bottom 112 of the main body portion 110, and the gas outlet of the compensation gas inlet channel 130 is also located on the side of the bottom 112 of the main body portion 110. Moreover, any one of the compensation gas inlet channels 130 and any process gas inlet channel 120 are not connected to each other. The above-mentioned compensation gas inlet channels 130 are distributed between the process gas inlet channels 120 and do not affect the normal gas inlet of the process gas inlet channels 120. In addition, the gas outlets of the process gas inlet channels 120 and the compensation gas inlet channels 130 can be formed at the bottom 112 of the main body portion 110, or can extend a certain distance from the bottom 112 of the main body portion 110. Preferably, the gas outlets of the process gas inlet channels 120 and the compensation gas inlet channels 130 are located in the same plane.

[0072] In an optional embodiment of this embodiment, one compensation gas inlet channel 130 is provided in the main body portion 110, that is, N = 1. As Figure 4 shown, the compensation gas inlet channel 130 is provided in the middle area of the main body portion 110. Thus, when the compensation gas is introduced through the compensation gas inlet channel 130, it can ensure that the compensation gas can be dispersed to different regions of the substrate 300, playing the role of compensating the source material gas.

[0073] In another alternative embodiment of the present embodiment, a plurality of compensation air intake channels 130 are provided in the body portion 110, that is, N≥2. The N compensation air intake channels 130 are arranged radially along the middle of the body portion 110, that is, the N compensation air intake channels 130 are distributed in different circumferences along the same radial direction of the body portion 110. As Figure 5 shown (for the convenience of display, only the compensation air intake channels 130 are shown in Figures 5 to 7 , and the process air intake channels 120 are not shown. The process air intake channels 120 also have Figure 2 or Figure 3 the settings shown), taking three compensation air intake channels 130 as an example, the three compensation air intake channels 130 are located on the same radial direction of the body portion 110 and are located in different circumferences of the body portion 110. Among them, the first compensation air intake channel 131 is distributed in the middle area of the body portion 110, the second compensation air intake channel 132 is distributed on the circumference C1, and the third compensation air intake channel 133 is distributed on the circumference C2. The circumferences C1 and C2 are different circumferences with different radii on the body portion 110.

[0074] There is a radial distance L1 between two adjacent compensation air intake channels 130 located in different circumferences. Referring to Figure 8 again, the inner diameter of the cavity 104 of the epitaxial growth device 10 is D. In this embodiment, the ratio of the inner diameter D of the cavity 104 to the radial distance L1 between two adjacent compensation air intake channels 130 is 3:1 to 20:1. Among them, the radial distance between two adjacent compensation air intake channels 130 is the radius difference between the two circumferences where the two adjacent compensation air intake channels 130 are located. As Figure 5 shown, the radial distance L1 between the second compensation air intake channel 132 and the third compensation air intake channel 133 is the difference between the radius of the circumference C2 and the radius of the circumference C1.

[0075] Optionally, the radial distances between adjacent compensation intake channels 130 are all the same, that is, the compensation intake channels 130 are evenly distributed radially along the body portion 110. For example, in one embodiment, the diameter D of the carrier device 200 of the epitaxial growth apparatus 10 is 320 mm. The first compensation intake channel 131, the second compensation intake channel 132, and the third compensation intake channel 133 are equally spaced from the center of the body portion 110. And the first compensation intake channel 131 is located at the center of the body portion 110, the second compensation intake channel 132 is located on the circumference with a radius of 50 mm, and the third compensation intake channel 133 is located on the circumference with a radius of 100 mm. That is, the radial distance between the first compensation intake channel 131 and the second compensation intake channel 132, and the radial distance between the second compensation intake channel 132 and the third compensation intake channel 133 are both 50 mm. In another embodiment, the diameter D of the carrier device 200 of the epitaxial growth apparatus 10 is 600 mm. The first compensation intake channel 131, the second compensation intake channel 132, and the third compensation intake channel 133 are equally spaced from the middle of the body portion 110. And the first compensation intake channel 131 is located at the center of the body portion 110, the second compensation intake channel 132 is located on the circumference with a radius of 70 mm, and the third compensation intake channel 133 is located on the circumference with a radius of 140 mm. That is, the radial distance L1 between the first compensation intake channel 131 and the second compensation intake channel 132, and the radial distance L1 between the second compensation intake channel 132 and the third compensation intake channel 133 are both 70 mm. In another embodiment, the diameter D of the carrier device 200 of the epitaxial growth apparatus 10 is 800 mm. The first compensation intake channel 131, the second compensation intake channel 132, and the third compensation intake channel 133 are equally spaced from the middle of the body portion 110. And the first compensation intake channel 131 is located at the center of the body portion 110, the second compensation intake channel 132 is located on the circumference with a radius of 100 mm, and the third compensation intake channel 133 is located on the circumference with a radius of 200 mm. That is, the radial distance L1 between the first compensation intake channel 131 and the second compensation intake channel 132, and the radial distance L1 between the second compensation intake channel 132 and the third compensation intake channel 133 are both 100 mm. In another embodiment, the diameter D of the carrier device 200 of the epitaxial growth apparatus 10 is 280 mm.The first compensation air intake passage 131, the second compensation air intake passage 132, and the third compensation air intake passage 133 are equally spaced from the center of the main body portion 110. The first compensation air intake passage 131 is located at the center of the main body portion 110, the second compensation air intake passage 132 is located on a circumference with a radius of 30 mm, and the third compensation air intake passage 133 is located on a circumference with a radius of 60 mm. That is, the radial distance L1 between the first compensation air intake passage 131 and the second compensation air intake passage 132, and the radial distance L1 between the second compensation air intake passage 132 and the third compensation air intake passage 133 are both 30 mm.

[0076] In other embodiments, the radial distances between adjacent compensation air intake passages 130 are not exactly the same. For example, the radial distances between at least two groups of adjacent compensation air intake passages 130 are equal.

[0077] The above is only described by taking three compensation air intake passages 130 as an example. It can be understood that more compensation air intake passages 130 can be provided in different circumferences along the same radial direction.

[0078] In another alternative embodiment, multiple compensation air intake passages 130 are also provided, that is, N≥2. Among the N compensation air intake passages 130, at least two compensation air intake passages 130 are located on the same circumference of the main body portion 110. As Figure 6 shown, taking 4 compensation air intake passages 130 as an example, the first compensation air intake passage 131 is provided at the middle position of the main body portion 110. There are two second compensation air intake passages distributed on the circumference C1 near the middle of the main body portion 110. The two second compensation air intake passages are the first second compensation air intake passage 1321 and the second second compensation air intake passage 1322 respectively. There is one third compensation air intake passage 133 distributed on the circumference C2 outside the circumference C1. The first compensation air intake passage 131, the first second compensation air intake passage 1321, and the third compensation air intake passage 133 are distributed on the same radial direction R1 of the main body portion 110. The second second compensation air intake passage 1322 located on the same circumferential circle C1 as the first second compensation air intake passage 1321 is located on a different radial direction R2.

[0079] In another alternative embodiment, multiple compensation air intake passages 130 are also provided, that is, N≥2. Among the N compensation air intake passages 130, except for the compensation air intake passage 130 located in the middle of the main body portion 110, the remaining compensation air intake passages 130 are all distributed on different circumferences of the main body portion 110. As Figure 7 shown, taking three compensation air intake passages 130 as an example, the first compensation air intake passage 131 is located in the middle of the main body portion 110, the second compensation air intake passage 132 is located on the circumference C1 of the radial direction R1, and the third compensation air intake passage 133 is located on the circumference C2 of the radial direction R2.

[0080] AsFigures 4 to 7 The compensation intake channel 130 of this embodiment is shown as a hole-type structure penetrating the body portion 110, such as a hole-type structure with a circular and / or elliptical cross-section. It can be understood that in an alternative embodiment, the compensation intake channel 130 can be set as a slit-like structure penetrating the body portion 110. In other alternative embodiments, in the direction from the top 111 to the bottom 112 of the body portion 110, the aperture of the hole-type structure can be the same or can be in a gradually changing pattern. For example, in the direction from the top 111 to the bottom 112 of the body portion 110, the aperture of the hole-type structure gradually decreases or gradually increases.

[0081] The above settings of the compensation intake channel 130 facilitate providing compensation gas to different regions of the substrate 300, or adjusting the gas flow rate, gas flow duration, gas flow type, etc. of each compensation intake channel 130 as needed. Therefore, a customized compensation mechanism can be made according to requirements.

[0082] Refer again to Figure 8 , the epitaxial growth apparatus 10 of this embodiment further includes a carrier device 200 disposed in the cavity 104 to carry the substrate 300 on which a semiconductor material layer needs to be grown. The outlet of the gas injection device 100 is disposed opposite to the side of the carrier surface of the carrier device 200. The side of the carrier surface of the carrier device 200 is used to carry the substrate 300 to be processed. The carrier device 200 can be a graphite disk with a certain diameter, or other structures well-known to those skilled in the art. A rotation device 400 penetrating the cavity 104 is disposed below the carrier device 200. The rotation device 400 supports the carrier device 200 and can drive the carrier device 200 to rotate around its axis during epitaxial growth under the drive of a motor. In an alternative embodiment, during the growth process, the carrier device 200 is controlled to rotate around its axis at a rate of 10 to 1200 rpm, and further, at a rate of 800 to 1200 rpm, to drive the substrate 300 carried by the carrier device 200 to rotate at the same speed.

[0083] As Figure 9 shown, the carrier surface of the carrier device 200 of this embodiment has a plurality of wafer placement areas 201 for placing the substrate 300 to be processed, such as a wafer. The wafer placement areas 201 are arranged around the middle area of the wafer placement device so that each wafer placement area 201 is exposed to the environment of the reaction space. The gas injection device 100 and the carrier device 200 are disposed opposite to each other. Specifically, the outlet side of the gas injection device 100 is disposed opposite to the side of the carrier surface of the carrier device 200, and a reasonable vertical distance between the gas injection device 100 (specifically, the outlet side) and the carrier device 200 is maintained to ensure that the process gas can react on the surface of the substrate 300 on the carrier device 200 to achieve material growth, while ensuring the uniformity of the film quality of epitaxial growth in the same batch.

[0084] In an alternative embodiment, as Figure 8 shown, the ratio between the diameter D of the carrier device 200 and the vertical height H of the gas injection device 100's gas outlet from the carrier surface is 10:1 to 40:1. For example, D and H can be the following combinations respectively: D = 320 mm, H = 30 mm; D = 250 mm, H = 15 mm; D = 320 mm, H = 25 mm; D = 300 mm, H = 15 mm; D = 600 mm, H = 15 mm; D = 280 mm, H = 15 mm; D = 500 mm, H = 20 mm, etc.

[0085] The number and arrangement of the carrier areas 201 on the carrier device 200 can be flexibly adjusted according to process requirements, with the necessity that each carrier area 201 is exposed to the environment of the reaction space. In some embodiments, as Figure 9 shown, the carrier areas 201 on the carrier device 200 are distributed in a circular array around the middle area of the carrier device 200. The carrier device 200 can be a disc, and the sizes of the carrier areas 201 distributed thereon can be the same, completely different, or not completely the same. For example, each carrier area 201 is used to carry an 8-inch wafer or a 12-inch wafer, or some carrier areas 201 are used to carry 8-inch wafers and other carrier areas 201 are used to carry 12-inch wafers. In an alternative embodiment, the epitaxial growth equipment 10 is further provided with a heating device, which is arranged below the carrier device 200. The heating device heats the carrier device 200 and then transfers heat to the substrate 300 to heat the substrate 300. After the process gas is ejected from the gas injection device 100, it flows through the carrier device 200 and can be quickly heated by the heat transfer of the carrier device 200, so as to perform epitaxial growth above the substrate 300 and realize material growth.

[0086] In this embodiment, in order to introduce the process gas and the compensation gas from the process gas inlet channel 120 and the compensation gas inlet channel 130 of the gas injection device 100, the epitaxial growth equipment 10 of this embodiment is further provided with a gas supply channel, which includes a process gas supply channel 500 connected to the process gas inlet channel 120 and a compensation gas supply channel 600 connected to the compensation gas inlet channel 130, and the compensation gas supply channel 600 is not connected to the process gas supply channel 500.

[0087] Taking the gas injection device 100 with the first process gas inlet channel 121 and the second process gas inlet channel 122 described in Embodiment 1 as an example, as Figure 10As shown, the process gas supply channel 500 includes a second process gas supply channel 502 that communicates with the first gas chamber 101 and further communicates with the first process gas inlet channel 121, and a first process gas supply channel 501 that communicates with the second gas chamber 102 and further communicates with the second process gas inlet channel 122. The first process gas supply channel 501 and the second process gas supply channel 502 do not communicate with each other and are controlled separately. The first process gas supply channel 501 and the second process gas supply channel 502 supply different source material gases respectively. For example, taking the growth of a GaN material layer and / or an AlN material layer as an example, the first process gas supply channel 501 is used to supply a metal organic compound source, and the second process gas supply channel 502 is used to supply a hydride gas.

[0088] The compensation gas supply channel 600 is connected to the compensation gas inlet channel 130, as Figure 10 shown. When the main body portion 110 is provided with a compensation gas inlet channel 130 located in the middle of the main body portion 110, a corresponding compensation gas supply channel 600 is provided. The compensation gas supply channel 600 includes a main pipeline 6000 connected to the compensation gas inlet channel 130, and a plurality of branch pipelines extending from the main pipeline 6000. Taking the growth of a GaN material layer and / or an AlN material layer as an example, it includes two branch pipelines: a first compensation branch pipeline 600-1 and a second compensation branch pipeline 600-2. For example, the first compensation branch pipeline 600-1 introduces a metal organic compound source, and the second compensation branch pipeline introduces a hydride gas. A compensation gas supply control device is also provided on the compensation gas supply channel 600, such as valves, switches, etc. that can realize the connection or disconnection between the compensation gas supply channel 600 and the compensation gas inlet channel 130. Specifically, the above compensation gas supply control devices can be provided on the main pipeline 6000 and each branch pipeline respectively.

[0089] When the number N of the compensation gas inlet channels 130 is N≥2, the compensation gas supply channel 600 is connected to the compensation gas inlet channels 130 in a one-to-one correspondence. Taking the example of setting 3 compensation gas inlet channels 130, as Figure 11 shown (for the convenience of display, Figure 11 and Figure 12 only the compensation gas supply pipelines are shown, and the process gas supply pipelines are not shown. It can be understood that the process gas supply pipelines are the same as those with Figure 10the same or similar settings as shown), in an optional embodiment, each compensation intake channel 130 is respectively connected to a compensation gas supply channel 600, that is, the first compensation intake channel 131 is connected to the first compensation gas supply channel 601, the second compensation intake channel 132 is connected to the second compensation gas supply channel 602, and the third compensation intake channel 133 is connected to the third compensation gas supply channel 603. And the first compensation gas supply channel 601, the second compensation gas supply channel 602, and the third compensation gas supply channel 603 all include a main pipeline 6000 connected to the compensation intake channel 130, and a plurality of branch pipelines extending from the main pipeline 6000. This compensation gas supply channel is the same as Figure 10 the compensation gas supply channel 600 shown in, and will not be elaborated here.

[0090] In an optional embodiment, when the number N of the compensation intake channels 130 is ≥ 2, the epitaxial growth device 10 includes a compensation gas supply channel 600. This compensation gas supply channel 600 includes a main pipeline 6000. The intake end of the main pipeline 6000 includes a plurality of intake branch pipelines, and the outlet end of the main pipeline 6000 includes a plurality of outlet branch pipelines. The number of intake branch pipelines is determined by the types of reaction gases required for epitaxial growth occurring in the cavity 104, and the number of outlet branch pipelines is determined by the number of compensation intake channels 130 of the main body part 110.

[0091] Taking the setting of 3 compensation intake channels 130 as an example, as Figure 12 shown, taking the growth of a GaN material layer and / or an AlN material layer as an example, the compensation gas supply channel 600 includes a main pipeline 6000. The intake end of the main pipeline 6000 includes two compensation branch pipelines. The first compensation branch pipeline 600-1 introduces a metal organic compound source, and the second compensation branch pipeline 600-2 introduces a hydride gas. The outlet end of the main pipeline 6000 includes three outlet branch pipelines. The first outlet branch pipeline 6001 is connected to the first compensation intake channel 131, the second outlet branch pipeline 6002 is connected to the second compensation intake channel 132, and the third outlet branch pipeline 6003 is connected to the third compensation intake channel 133. Correspondingly, a compensation gas supply control device can be provided on the main pipeline 6000 and / or each intake branch pipeline and / or each outlet branch pipeline to realize the connection or disconnection between the compensation gas supply channel 600 and the compensation intake channel 130.

[0092] In an alternative embodiment, the epitaxial growth apparatus 10 is further provided with a compensation gas supply control device and a compensation control device. The detection device is disposed in the body portion 110 and is configured to detect the substrate 300 in the chamber during epitaxial growth to obtain growth parameters of the material grown on the substrate 300, such as growth rate, thickness of the material layer, etc. In an alternative embodiment, the detection device may be a non-contact detection device, disposed at the top 111 of the body portion 110 of the gas injection device 100, and one or more detection devices may be provided. Preferably, any compensation gas inlet channel 130 may be used as the detection channel of the non-contact detection device, or the process gas inlet channel 120 closest to any compensation gas inlet channel 130 may be used as the detection channel of the non-contact detection device. Further, at least one compensation gas inlet channel 130 near the edge of the body portion 110 is used as the detection channel. When one detection device is provided, since the carrier device 200 drives the substrate 300 to rotate during epitaxial growth, growth parameters of different substrates 300 on different carrier regions or growth parameters of different regions on the same substrate 300 can be obtained at different time points; when multiple detection devices are provided, growth parameters of different substrates 300 on different carrier regions or growth parameters of different regions on the same substrate 300 can be obtained at the same time point or at different time points.

[0093] Referring again to Figure 5 , when the N compensation gas inlet channels 130 (the first compensation gas inlet channel 131, the second compensation gas inlet channel 132, the third compensation gas inlet channel 133,..., the Nth compensation gas inlet channel 13N) of the present invention are arranged in sequence along the radial direction of the body portion 110 of the gas injection device 100 starting from the middle, N detection devices may be provided, and the N detection devices (the first detection device T1, the second detection device T2, the third detection device T3,..., the Nth detection device TN) are sequentially arranged at the above-mentioned respective compensation gas inlet channels. The above-mentioned respective detection devices can detect parameters such as the temperature and the refractive index of the semiconductor material layer at the corresponding positions. Each detection device detects and obtains the growth rate of the semiconductor material layer in the region corresponding to the compensation gas inlet channel where it is located. Therefore, by providing the above-mentioned N detection devices, the growth rates of different regions of the semiconductor material layer in the radial direction of the substrate can be obtained.

[0094] The compensation gas supply control device is arranged in the compensation gas supply channel 600 and is used to control the opening and closing of the corresponding compensation gas supply channel 600. The compensation control device is communicatively connected to the detection device and the compensation gas supply control device, and is used to obtain the above-mentioned growth parameters detected by the detection device, and control the compensation gas supply control device according to the growth parameters to perform opening and closing control on the compensation gas supply channel 600. Specifically, the compensation control device compares the growth parameters (such as growth rate, material layer thickness) of different substrates 300 or different regions of the same substrate 300 according to the received growth parameters. When the growth parameters deviate, the compensation control device controls the compensation gas supply control device to open, and introduces compensation gas into the chamber through the compensation gas inlet channel 130. During this process, the detection device real-time feedbacks the growth parameters of the material, and the compensation control device receives and compares the growth parameters in real time until there is no difference between the growth parameters. Then the compensation control device controls the compensation gas inlet control device to close and stops introducing compensation gas into the chamber.

[0095] Repeat the above process until the material growth is completed. The material layer grown by the epitaxial growth device 10 provided by this embodiment has a uniform thickness, that is, the material layer thickness and quality are uniform between different substrates 300 in different loading areas of the loading device 200; the material layer thickness and quality are uniform in different regions of the same substrate 300.

[0096] To realize the opening and closing of components related to semiconductor material growth processes such as the above-mentioned detection device, compensation gas inlet channel, process gas inlet channel, etc., as well as the processing of various relevant data and the adjustment of relevant parameters in the semiconductor growth process, the epitaxial growth device 10 provided by the present invention further includes different functional modules. Specifically, as Figure 13 shown, the epitaxial growth device 10 of the present application includes a detection module communicatively connected to the detection device in a one-to-one correspondence, and a source gas compensation module communicatively connected to each compensation gas inlet channel 130 in a one-to-one correspondence. It also includes an equipment parameter input module for setting parameters (temperature, pressure, etc.) inside the cavity 104 of the epitaxial growth device 10, and other functional expansion modules (such as a visualization module, etc.). The epitaxial growth device 10 further includes an internal data calculation module, which is communicatively connected to the above-mentioned detection modules, source gas compensation module, equipment parameter input module and functional expansion module to receive the data transmitted by the above-mentioned modules, analyze each data, and then feedback to each module. Each module controls the corresponding components to perform opening and closing actions to complete the adjustment of the generation process.

[0097] Taking the growth of GaN material layer and AlN material layer in the above-mentioned epitaxial growth device 10 as an example, the present invention will be described in detail through the following specific embodiments.

[0098] Embodiment 1

[0099] This embodiment provides an epitaxial growth method for a semiconductor compound. The equipment for this epitaxial growth method is a MOCVD device, and this MOCVD device is used to grow GaN and AlN material layers.

[0100] Similarly, reference can also be made to Figure 8 , this MOCVD device includes a cavity 104, a carrier device 200, a heating device, a detection device, and a gas injection device 100, where the gas injection device 100 is arranged at the top of the cavity 104. The gas injection device 100 includes a number of process gas inlet channels 120 and N compensation gas inlet channels 130. The process gas inlet channels 120 are the main delivery channels for the source gas, and the compensation gas inlet channels 130 serve as the compensation delivery channels for the source gas. In this embodiment, the diameter D of the carrier device 200 is 320 mm, and the vertical distance H from the outlet (bottom surface) of the gas injection device 100 to the carrier surface of the carrier device 200 (i.e., to the surface of the substrate 300 carried by the carrier device 200) is 25 mm. The detection device can detect the temperature of the surface of the semiconductor material layer growing on the surface of the carrier device 200 and the substrate, and can also detect the reflectivity of the surface of the semiconductor material layer growing on the substrate. Through this reflectivity, the growth rate of the semiconductor material layer in the corresponding area can be calculated. The detection device is specifically a MOCVD online monitoring system viperRTC–LSS, which calculates the growth rate by using the change in the reflectivity of the light on the surface of the growing thin film. The specific installation method and working method on the cavity 104 are conventional technical means in the art.

[0101] In this embodiment, the process gas inlet channels 120 in the gas injection device include channels for providing metal organic compound source gases and channels for hydride source gases, and the channels for hydride source gases and the channels for metal organic compound source gases are alternately distributed. Again, referring to Figure 4 , where the first process gas inlet channel 121 serves as the inlet channel for metal organic compound source gases, and the second process gas inlet channel 122 serves as the inlet channel for hydride source gases. The above first process gas inlet channel 121 and second process gas inlet channel 122 are arranged in a one - character staggered pattern to form a gas curtain and form multiple rows. The gas injection device 100 is provided with one compensation gas inlet channel 130, that is, N = 1, and this compensation gas inlet channel 130 is arranged at the central position of the main body part 110 of the gas injection device 100. During the growth process, different source gases are selected and introduced according to the type of the material layer to be grown. For example, in this embodiment, when growing a GaN material layer, the first process gas inlet channel 121 introduces a first source gas containing a gallium source, and the second process gas inlet channel 122 introduces a second source gas containing a hydride; when growing an AlN material layer, the first process gas inlet channel 121 introduces a third source gas containing an aluminum source, and the second process gas inlet channel 122 introduces a fourth source gas containing a hydride. The fourth source gas and the second source gas can contain the same gas.

[0102] Reference Figure 10 In this embodiment, corresponding to the above-mentioned single compensation intake air passage 130, a compensation air supply passage 600 is provided. The compensation air supply passage 600 includes a main pipeline 6000 connected to the compensation intake air passage 130, and a first compensation branch pipeline 600-1 and a second compensation branch pipeline 600-2 extending from the main pipeline 6000. The first compensation branch pipeline 600-1 and the second compensation branch pipeline 600-2 do not affect each other and are independently controlled. Among them, the first compensation branch pipeline 600-1 is introduced with a metal organic compound source gas, and the second compensation branch pipeline 600-2 is introduced with a hydride source gas.

[0103] In this embodiment, first, a GaN material layer is grown. First, the reaction temperature in the cavity 104 is controlled to be 1050 °C, the reaction pressure is 150 mbar, and the carrier device 200 rotates at a speed of 800 rmp under the drive of the rotating device 400 (for example, a rotating shaft). During the growth of the GaN material layer, the amount or ratio of the gas flow rate introduced is determined according to the thickness of the grown GaN material layer. In an alternative embodiment, 80 ml / min of a first source gas (a gallium source, such as trimethylgallium source) is introduced through the first process intake air passage 121, 10 L / min of a nitrogen source (such as ammonia) and 30 L / min of hydrogen are introduced through the second process intake air passage 122. Without gas compensation, a GaN material layer with the required thickness is grown.

[0104] After that, the growth process of the AlN material layer is switched. Specifically, the reaction temperature in the cavity 104 is controlled to be 1150 °C, the reaction pressure is 120 mbar, and the carrier device 200 rotates at a speed of 1000 rmp under the drive of the rotating device 400 (for example, a rotating shaft). And the process gas introduced into the process intake air passage 120 is switched. Specifically, the first process intake air passage 121 is switched to introduce 500 ml / min of a third source gas (an aluminum source, trimethylgallium aluminum), and the second process intake air passage 122 is switched to introduce a fourth source gas. Specifically, the flow rate of ammonia is changed to 1 L / min of ammonia, and the flow rate of hydrogen is 40 L / min. That is, in this embodiment, M O = 500 ml / min, M H = 41 L / min. Due to the serious pre-reaction of Al atoms, the growth rate of the inner circle of the semiconductor material layer detected by the detection device is 1 μm / h, and the growth rate of the outer circle is 1.1 μm / h. It can be seen that when no gas compensation is performed, there is a large difference in the growth rate of the AlN material layer in different radial ranges of the same substrate, that is, there is a large thickness non-uniformity. Since when no gas compensation is performed, the growth rate of the AlN material layer in the inner circle of the substrate is less than the growth rate of the AlN material layer in the outer circle (i.e., V M-1 <V M), from which it can be judged that during the growth process of the AlN material layer, metal organic compound source gases need to be compensated.

[0105] In order to eliminate the above growth rate difference between the inner and outer circles of the substrate and achieve the uniformity of the thickness of the AlN material layer on the inner and outer circles of the substrate, during the growth of the AlN material, according to the compensation formula M M-1 =γ((V M / V M-1 ) - 1)M O , where γ = 1.2, V M and V M-1 respectively correspond to the above growth thickness and inner circle thickness, and the flow rate M M-1 of the third source gas that needs to be compensated is calculated to be 60 ml / min. At this time, the ratio of the flow rate of the third source gas introduced into the process gas inlet channel to the flow rate of the third source gas compensated by the compensation gas inlet channel is 8.33:1.

[0106] Specifically, the internal data calculation module receives the growth rate values of the above inner and outer circles, calculates the gas flow rate M M-1 that needs to be compensated according to the above compensation formula, and then transmits the obtained gas flow rate M [[ID=B]] M-1 to the source gas compensation module. The source gas compensation module controls the corresponding first compensation branch pipeline 600-1 to open according to the gas type to be compensated as a metal organic compound source gas, so as to introduce trimethylaluminum, a metal organic compound source gas, into the compensation gas inlet channel at a flow rate of 60 ml / min, while the second compensation branch pipeline 600-2 as the hydride gas compensation channel does not perform gas compensation. The growth time is 2 hours, the thickness of the inner circle of the semiconductor material layer is 2.6 microns, and the outer circle is 2.6 microns. The thickness of the inner and outer circles is the same, achieving the uniformity of the thickness of the semiconductor material layer. Thus, it can be seen that in this embodiment, the uniform growth of GaN and AlN material layers is achieved in the same cavity, and the parameter adjustment during the growth process is simple and the process is simplified.

[0107] Embodiment 2

[0108] This embodiment also provides an epitaxial growth method of a semiconductor compound. The MOCVD equipment provided by this epitaxial growth method is also used to grow GaN and AlN materials. The same parts of the above epitaxial growth method in this embodiment and Embodiment 1 will not be described again. The differences are as follows:

[0109] In this embodiment, the diameter D of the carrying device 200 of the epitaxial growth equipment is 280 mm, and the vertical distance H from the gas outlet of the gas injection device 100 to the carrying surface of the carrying device 200 is 15 mm. In this embodiment, the setting of the process gas inlet channel 120 is the same as Figure 2 shown. The setting of the compensation gas inlet channel refers to Figure 5 and Figure 11As shown, three compensation air intake channels are arranged along the same radial direction of the main body part of the gas injection device from the middle of the main body part. The first compensation air intake channel 131 is arranged at the central position of the main body part 110, the second compensation air intake channel 132 is arranged on the circumference 30 mm away from the central position of the main body part, and the third compensation air intake channel 133 is arranged on the circumference 60 mm away from the central position of the main body part. In addition, a detection device is arranged at 90 mm away from the central position of the main body part, serving as the fourth growth rate test point in addition to the detection devices used for the process air intake channels closest to the first compensation air intake channel, the second compensation air intake channel, and the third compensation air intake channel respectively, to detect the reflectivity of the outermost material layer corresponding to it, and further detect the real-time growth rate of the material layer.

[0110] Referring to Figure 11 , in this embodiment, each compensation air intake channel 130 is respectively connected to a compensation gas supply channel 600. That is, the first compensation air intake channel 131 is connected to the first compensation gas supply channel 601, the second compensation air intake channel 132 is connected to the second compensation gas supply channel 602, and the third compensation air intake channel 133 is connected to the third compensation gas supply channel 603. And the first compensation gas supply channel 601, the second compensation gas supply channel 602, and the third compensation gas supply channel 603 all include a main pipeline 6000 connected to the compensation air intake channel 130, and a first compensation branch pipeline 600-1 and a second compensation branch pipeline 600-2 extending from the main pipeline 6000. The first compensation branch pipeline 600-1 leads into a metal organic compound source, and the second compensation branch pipeline 600-2 leads into a hydride gas. Control devices (such as pneumatic valves) are respectively arranged on the main pipeline 6000 of each compensation gas supply channel 600 and on the first compensation branch pipeline 600-1 and the second compensation branch pipeline 600-2, so that the first compensation branch pipeline 600-1 and the second compensation branch pipeline 600-2 are connected in parallel to the main pipeline they are respectively connected to, and each compensation gas supply channel 600 and its first compensation branch pipeline 600-1 and second compensation branch pipeline 600-2 do not affect each other and are independently controlled.

[0111] In this embodiment, first, a GaN material layer is grown. The reaction temperature in the cavity 104 is controlled at 1050 °C, the reaction pressure is 150 mbar, and the carrying device 200 rotates at a speed of 800 rmp under the drive of the rotating shaft. During the growth process, the amount or proportion of the gas flow rate introduced is determined according to the thickness of the grown GaN material layer. In an optional embodiment, 80 ml / min of a first source gas (a gallium source, such as trimethylgallium source) is introduced through the first process air intake channel 121, 10 L / min of a nitrogen source (such as ammonia) and 30 L / min of hydrogen are introduced through the second process air intake channel 122. Without gas compensation, a GaN material layer with the required thickness is grown.

[0112] After that, switch to the growth process of the AlN material layer. Specifically, control the reaction temperature in the cavity 104 to be about 1150 °C, the reaction pressure to be 120 mbar, and the carrying device 200 to rotate at a speed of 1000 rmp under the drive of the rotating device 400 (for example, the rotating shaft). Directly switch the process gas introduced into the process gas inlet channel 120. Specifically, switch the first process gas inlet channel 121 to introduce the third source gas (aluminum source, trimethylgallium aluminum) at 500 ml / min, and switch the second process gas inlet channel 122 to introduce the fourth source gas. Specifically, change the flow rate of ammonia to 1 liter / min and the flow rate of hydrogen to 35 liters / min. That is, in this embodiment, M O = 500 ml / min, M H = 36 liters / min. Without gas compensation, the growth time is 2 hours. Due to the serious pre-reaction of Al atoms, the following data are detected by each detection device: the growth rate of the semiconductor material layer in the inner circle is 0.9 μm / h, the growth rate of the semiconductor material layer in the middle circle is 1 μm / h, the growth rate of the semiconductor material layer in the outer circle is 1 μm / h, and the growth rate of the semiconductor material layer in the outermost circle is 1.05 μm / h.

[0113] It can be seen that the growth rate of the AlN material layer at the edge of the carrying device 200 corresponding to the edge of the main body of the gas injection device is greater than the growth rate of the AlN material layer in the middle area of the carrying device 200 corresponding to the center position of the main body of the gas injection device. That is, V M-1 <V M . From this, it can be judged that during the growth of the AlN material layer, it is necessary to compensate for the third source gas metal organic compound source gas. Therefore, according to the compensation formula M M-1 = γ((V M / V M-1 ) - 1)Mo, where γ = 0.9, calculate the flow rate of the third source gas that needs to be compensated. Since the growth rates of the outer circle and the middle circle are the same, in this embodiment, the inner circle and the middle circle, the middle circle and the outermost circle, and the outer circle and the outermost circle are used as the calculation bases respectively. That is, when calculating the flow rate of the third source gas introduced into the first compensation gas inlet channel 131, V M , V M-1 and respectively correspond to the growth rates of the middle circle and the inner circle mentioned above; when calculating the flow rate of the third source gas introduced into the second compensation gas inlet channel 132, V M , V M-1 and respectively correspond to the growth rates of the outermost circle and the inner circle mentioned above; when calculating the flow rate of the third source gas introduced into the third compensation gas inlet channel 133, V M , V M-1Correspond to the growth rates of the outermost circle and the outer circle respectively. It is calculated that 45 ml / min of trimethylaluminum needs to be introduced into the first compensation intake channel 131, 22.5 ml / min of trimethylaluminum needs to be introduced into the second compensation intake channel 132, and 22.5 ml / min of trimethylaluminum needs to be introduced into the third compensation intake channel 133. At this time, the flow rate ratio of the third source gas introduced through the process intake channel 120 to the third source gas compensated by the compensation intake channel 130 is 11.11 - 22.22.

[0114] Respectively control the opening of the first compensation branch pipelines 600-1 of the first compensation gas supply channel 601, the second compensation gas supply channel 602 and the third compensation gas supply channel 603, and introduce the metal organic compound source into their respective main pipelines at the flow rates of 45 ml / min, 22.5 ml / min, and 22.5 ml / min respectively. Then, trimethylaluminum is compensated into the cavity 104 through the first compensation intake channel 131, the second compensation intake channel 132 and the third compensation intake channel 133 respectively. The second compensation branch pipelines 600-2 of the first compensation gas supply channel 601, the second compensation gas supply channel 602 and the third compensation gas supply channel 603 are closed, and no hydride gas compensation is performed. The growth time is 3 hours, and the thickness of the semiconductor material layer detected at each test point is 6 microns. The thicknesses of the inner and outer circles are the same, achieving the uniformity of the thickness of the semiconductor material layer. Thus, in this embodiment, the uniform growth of GaN and AlN material layers is achieved in the same cavity, and the parameter adjustment during the growth process is simple and the process is simplified.

[0115] Embodiment III

[0116] This embodiment also provides an epitaxial growth method for semiconductor compounds. The MOCVD equipment in this embodiment is used to grow GaN and AlN materials. The same parts of the above epitaxial growth method in this embodiment and Embodiment I and Embodiment II will not be elaborated, and the differences are as follows:

[0117] In this embodiment, the diameter D of the carrier device of the epitaxial growth equipment 10 is 600 mm, and the vertical distance H from the gas outlet of the gas injection device 100 to the carrier surface of the carrier device 200 is 15 mm. The setting of the compensation intake channel 130 also refers to Figure 5 and Figure 11 As shown, three compensation intake channels 130 are arranged along the same radial direction of the main body part 110 of the gas injection device 100 from the middle of the main body part 110 of the gas injection device 100. The first compensation intake channel 131 is arranged at the central position of the main body part, the second compensation intake channel 132 is arranged on the circumference 70 mm away from the central position of the main body part, and the third compensation intake channel 133 is arranged on the circumference 140 mm away from the central position of the main body part. In this embodiment, the setting of the compensation gas supply channel 600 is as Figure 11 shown, which is the same as the setting in Embodiment II.

[0118] In this embodiment, the above-mentioned first compensation intake air channel, second compensation intake air channel, and third compensation intake air channel are designed independently and do not interfere with each other. At the same time, a detection device is used to detect through the process intake air channels closest to the first compensation intake air channel, second compensation intake air channel, and third compensation intake air channel respectively, and the reflectivity of the material layer in the corresponding area is detected, and then the real-time growth rate of the material layer is detected.

[0119] In this embodiment, first, a GaN material layer is grown. The reaction temperature in the cavity 104 is controlled to be 1050 °C, the reaction pressure is 150 mbar, and the carrying device 200 rotates at a speed of 1000 rmp under the drive of the rotating shaft. During the growth process, the amount or proportion of the gas flow rate introduced is determined according to the thickness of the grown GaN material layer. In an alternative embodiment, 200 ml / min of a first source gas (gallium source, such as trimethylgallium source) is introduced through the first process intake air channel 121, and 30 L / min of a nitrogen source (such as ammonia) and 150 L / min of hydrogen are introduced through the second process intake air channel 122. Without gas compensation, a GaN material layer with the required thickness is grown.

[0120] After that, the growth process of the AlN material layer is switched. Specifically, the reaction temperature in the cavity 104 is controlled to be 1150 °C, the reaction pressure is 100 mbar, and the carrying device 200 rotates at a speed of 1000 rmp under the drive of the rotating device 400 (for example, the rotating shaft). The process gas introduced into the process intake air channel 120 is directly switched. Specifically, 500 ml / min of a third source gas trimethylaluminum source is introduced through the first process intake air channel 121, and a fourth source gas: 5 L / min of ammonia and 70 L / min of hydrogen are introduced through the second process intake air channel 122. That is, in this embodiment, M O = 500 ml / min, M H = 75 L / min. During the growth of the AlN material layer, the following data are detected by each detection device: the growth rate of the semiconductor material layer in the inner circle is 0.9 μm / h, the growth rate of the semiconductor material layer in the middle circle is 1 μm / h, and the growth rate of the semiconductor material layer in the outer circle is 1.05 μm / h.

[0121] It can be seen that the growth rate of the AlN material layer at the edge of the carrying device 200 corresponding to the edge of the main body part of the gas injection device is greater than the growth rate of the AlN material layer in the middle area of the carrying device 200 corresponding to the center position of the main body part of the gas injection device, that is, V M-1 <V M , from which it can be judged that during the growth of the AlN material layer, the third source gas needs to be compensated. Therefore, according to the compensation formula M M-1 = γ((V M / VM-1 ) - 1) Mo, where γ = 0.8, calculate the flow rate of the third source gas that needs to be compensated. It is calculated that 40 ml / min of trimethylaluminum needs to be introduced into the first compensation intake channel 131, and 20 ml / min of trimethylaluminum needs to be introduced into the second compensation intake channel 132. At this time, the ratio of the flow rate of the third source gas introduced into the process intake channel 120 to the flow rate of the third source gas compensated by the compensation intake channel 130 is 12.5 - 25. No hydride gas compensation is performed on the above three compensation intake channels 130. The growth time is 3 hours, and the thickness of the semiconductor material layer detected at each test point is 6 μm, and the thickness of the inner and outer circles is the same, achieving the uniformity of the thickness of the semiconductor material layer.

[0122] Example 4

[0123] This embodiment also provides an epitaxial growth method for semiconductor compounds. The MOCVD equipment in this embodiment is used to grow GaN and AlN materials. In the above epitaxial growth method of this embodiment, the inner diameter D of the cavity 104, the vertical distance H from the gas outlet of the gas injection device 100 to the bearing surface of the bearing device 200, the settings of the process intake channel 120 and the compensation intake channel 130 are the same as those in Example 1. The process of growing the GaN material layer is the same as the growth process of the GaN material layer in Example 1. The difference lies in the growth process of the AlN material layer. Specifically:

[0124] In this embodiment, after growing the GaN material layer with the required thickness, switch to the growth process of the AlN material layer. Specifically, control the reaction temperature in the cavity 104 to be 1150 °C, the reaction pressure to be 130 mbar, and the bearing device 200 to rotate at a speed of 1000 rmp under the drive of the rotating device 400 (for example, the rotating shaft). Introduce 500 ml / min of the third source gas trimethylaluminum source through the first process intake channel 121, and introduce the fourth source gas: 5 L / min of ammonia gas and 70 L / min of hydrogen gas through the second process intake channel 122. That is, in this embodiment, M O = 500 ml / min, M H = 75 L / min. During the growth process of the AlN material layer, the following data are detected by each detection device: the growth rate of the semiconductor material layer in the inner circle is 1.25 μm / h, and the growth rate of the semiconductor material layer in the outer circle is 1 μm / h.

[0125] It can be seen that the growth rate of the AlN material layer corresponding to the center of the bearing device 200 closer to the center position of the main body of the gas injection device is greater than the growth rate of the AlN material layer in the edge area corresponding to the edge position of the main body of the gas injection device, that is, V M-1 > V M, it can be determined that during the growth process of the AlN material layer, the fourth source gas needs to be compensated. Therefore, according to the compensation formula M M-1 =γ(1-(V M / V M-1 ))M H , where γ = 0.8, calculate the flow rate M M-1 of the fourth source gas to be compensated = 12 L / min. According to the ratio of ammonia gas and hydrogen gas (5:75) introduced during the AlN growth process, the flow rate of ammonia gas to be compensated can be obtained as 0.8 L / min, and the flow rate of hydrogen gas is: 11.2 L / min. At this time, the ratio of the flow rate of the fourth source gas introduced into the process gas inlet channel 120 to the flow rate of the fourth source gas compensated by the compensation gas inlet channel 130 is 6.25.

[0126] Control the second compensation branch pipeline 600-2 as the hydride gas compensation channel to be opened to introduce 0.8 L / min of ammonia gas and 11.2 L / min of hydrogen gas into the compensation gas inlet channel, while the first compensation branch pipeline 600-1 as the metal organic compound source gas compensation channel does not perform gas compensation. After growing for 2 hours, the thickness of the inner circle of the semiconductor material layer is measured to be 2.6 μm, and the outer circle is 2.6 μm. The thickness of the inner and outer circles is the same, achieving the uniformity of the thickness of the semiconductor material layer. Thus, in this embodiment, the uniform growth of GaN and AlN material layers is achieved in the same cavity, and the parameter adjustment during the growth process is simple and the process is simplified.

[0127] Embodiment 5

[0128] This embodiment also provides an epitaxial growth method for semiconductor compounds. The MOCVD equipment in this embodiment is used to grow GaN and AlN materials. In the above epitaxial growth method of this embodiment, the inner diameter D of the cavity 104 = 280 mm, and the vertical distance H from the gas outlet of the gas injection device 100 to the bearing surface of the bearing device 200 is 15 mm. The setting of the process gas inlet channel 120 is the same as Figure 2 shown. The setting of the compensation gas inlet channel refers to Figure 5 and Figure 11 shown. Three compensation gas inlet channels are arranged along the same radial direction of the main body part 110 of the gas injection device from the middle of the main body part of the gas injection device. The first compensation gas inlet channel 131 is arranged at the central position of the main body part 110, the second compensation gas inlet channel 132 is arranged on the circumference 30 mm away from the central position of the main body part, and the third compensation gas inlet channel 133 is arranged on the circumference 60 mm away from the central position of the main body part. Similarly referring to Figure 11 , in this embodiment, each compensation gas inlet channel 130 is respectively connected to a compensation gas supply channel 600, and the specific description can refer to Embodiment 2.

[0129] In this embodiment, the process of growing the GaN material layer is the same as that of the GaN material layer in Embodiment 4. The difference lies in the growth process of the AlN material layer. Specifically:

[0130] In this embodiment, after growing the GaN material layer with the required thickness, the growth process of the AlN material layer is switched. Specifically, the reaction temperature in the cavity 104 is controlled at 1150 °C, the reaction pressure is 130 mbar, and the carrying device 200 rotates at a speed of 1000 rmp under the drive of the rotating device 400 (for example, the rotating shaft). 1000 ml / min of trimethylaluminum source, the third source gas, is introduced through the first process gas inlet channel 121, and the fourth source gas: 5 L / min of ammonia gas and 70 L / min of hydrogen gas are introduced through the second process gas inlet channel 122. That is, in this embodiment, M O = 1000 ml / min, M H = 75 L / min. During the growth process of the AlN material layer, the following data is detected by each detection device: the growth rate of the inner ring of the AlN material layer corresponding to the process gas inlet channel closest to the first compensation gas inlet channel 131 is 2 μm / h, the growth rate of the middle ring of the AlN material layer corresponding to the process gas inlet channel closest to the second compensation gas inlet channel 132 is 1.8 μm / h, and the growth rate of the outer ring of the AlN material layer corresponding to the process gas inlet channel closest to the third compensation gas inlet channel 133 is 1.71 μm / h.

[0131] It can be seen that the growth rate of the AlN material layer corresponding to the center of the carrying device 200 closer to the center of the body part of the gas injection device is greater than the growth rate of the AlN material layer in the edge area of the carrying device 200 corresponding to the edge position of the body part of the gas injection device. That is, V M-1 >V M . Therefore, it can be judged that during the growth process of the AlN material layer, the fourth source gas needs to be compensated. Therefore, according to the compensation formula M M-1 = γ(1 - (V M / V M-1 ))M H , where γ = 0.9, the flow rates of the fourth source gas to be compensated by the first compensation gas inlet channel 131 and the second compensation gas inlet channel 132 are calculated respectively. When calculating the flow rate of the fourth source gas introduced through the first compensation gas inlet channel 131, V M , V M-1 correspond to the growth rates of the middle ring and the inner ring mentioned above respectively; when calculating the flow rate of the third source gas introduced through the second compensation gas inlet channel 132, V M , V M-1 are the growth rates of the outer ring and the inner ring respectively. The calculated flow rate of the fourth source gas to be introduced into the first compensation gas inlet channel 131 is M M-1= 6.75 L / min, the flow rate M of the fourth source gas to be introduced into the second compensation intake passage 132 M-1 = 3.375 L / min. At this time, the ratio of the flow rate of the fourth source gas introduced into the process intake passage 120 to the flow rate of the fourth source gas compensated by the compensation intake passage 130 is 11.11 - 22.22.

[0132] According to the ratio of ammonia gas and hydrogen gas introduced during the AlN growth process (5:75), it can be obtained that the flow rate of ammonia gas to be compensated by the first compensation intake passage 131 is 0.45 L / min, and the flow rate of hydrogen gas is: 6.3 L / min; the flow rate of ammonia gas to be compensated by the second compensation intake passage 132 is 0.225 L / min, and the flow rate of hydrogen gas is: 3.15 L / min. Control the second compensation branch pipeline 600-2 of the first compensation gas supply pipeline 601 connected to the first compensation intake passage 131 and the second compensation gas supply pipeline 602 connected to the second compensation intake passage 132 to be opened. The first compensation gas supply pipeline 601 introduces 0.45 L / min of ammonia gas and 6.3 L / min of hydrogen gas into the first compensation intake passage 131; the second compensation gas supply pipeline 602 introduces 0.225 L / min of ammonia gas and 3.15 L / min of hydrogen gas into the second compensation intake passage 132. And the first compensation branch pipeline 600-1 of the first compensation gas supply pipeline 601 and the second compensation gas supply pipeline 602 as the metal organic compound source gas compensation channels do not perform gas compensation. After growing for 2 hours, the thickness of the inner circle of the semiconductor material layer is measured to be 2.6 microns, and the outer circle is 2.6 microns. The thicknesses of the inner and outer circles are the same, achieving the uniformity of the thickness of the semiconductor material layer. Thus, it can be seen that in this embodiment, the uniform growth of GaN and AlN material layers is achieved in the same cavity, and the parameter adjustment during the growth process is simple and the process is simplified.

[0133] The above embodiments merely illustrate the principles and effects of the present invention, rather than limiting the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes completed by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. A method for epitaxial growth of a semiconductor compound, characterized in that: include: Provided are epitaxial growth equipment and a detection device, wherein the epitaxial growth equipment is provided with a gas injection device, the gas injection device including gas inlet channels consisting of a plurality of process gas inlet channels and at least one compensating gas inlet channel, each of the compensating gas inlet channels being provided in an area where the plurality of process gas inlet channels are located, and one of the at least one compensating gas inlet channels being located at the center of the gas injection device, the number of the compensating gas inlet channels being N, and when N is 1, the compensating gas inlet channel being located at the center of the gas injection device, and when N is a natural number greater than 1, the compensating gas inlet channels being arranged radially from the center of the gas injection device; placing the substrate into the epitaxial growth device; controlling the epitaxial growth apparatus to reach a first reaction temperature and a first reaction pressure, controlling the rotation of the substrate, and introducing a first source gas containing a Group III element and a second source gas containing a Group V element into the chamber of the epitaxial growth apparatus through each of the process gas inlet channels to perform a growth process of a first semiconductor material layer consisting of gallium nitride on the substrate; Control the epitaxial growth device to reach the second reaction temperature and the second reaction pressure, control the substrate to rotate, and introduce a flow rate of M into the cavity through each process air inlet channel. O The third source gas containing group III elements and the flow rate is M H a fourth source gas containing a Group V element to perform a growth process of a second semiconductor material layer consisting of aluminum nitride on the substrate, wherein the Group III element in the third source gas is different from the Group III element in the first source gas; During the growth process of the second semiconductor material layer, the detection device is used to obtain the growth rates of the second semiconductor material layer in different areas in the radial direction of the substrate through each of the compensation gas inlet channels, and it is determined whether to introduce compensation gas through at least one of the compensation gas inlet channels to synchronously perform gas compensation processing based on the growth rates, wherein the compensation gas is the third source gas or the fourth source gas; During the growth process of the second semiconductor material layer, the step of using the detection device to obtain the growth rates of the second semiconductor material layer in different areas in the radial direction of the substrate through the compensation gas inlet channels includes: The detection device is used to obtain the material growth rate V of the substrate area corresponding to the M-1th compensation inlet channel on the second semiconductor material layer through each compensation inlet channel. M-1 , and obtaining the material growth rate V of the substrate region corresponding to the Mth compensation inlet channel adjacent to the M-1th compensation inlet channel M , M is a positive integer greater than or equal to 2 and less than or equal to N, the M-1th gas inlet region is closer to the center of the gas injection device than the Mth gas inlet region, and N is a positive integer greater than or equal to 2; Judge V M-1 >V M Then, the fourth source gas is introduced from the M-1th compensation gas inlet channel, and the flow rate is controlled to M M-1 =γ(1-(V M / V M-1 ))M H ; Judge V M-1 <V M Then, the third source gas is introduced from the M-1th compensation gas inlet channel, and the flow rate is controlled to M M-1 =γ((V M / V M-1 )-1)M O ; Where, γ is the compensation coefficient, γ=0.8~1.2; The first source gas contains a gallium source, the second source gas and the fourth source gas both contain a nitrogen source, and the third source gas contains an aluminum source.

2. The epitaxial growth method of a semiconductor compound according to claim 1, wherein During the growth process of the first semiconductor material layer and the growth process of the second semiconductor material layer, the substrate is controlled to rotate around the axis of the base supporting the substrate at a rate of 800-1200 rpm.

3. The epitaxial growth method of a semiconductor compound according to claim 1, wherein: The first reaction temperature is 1000-1200 degrees Celsius, and the first reaction pressure is 100-200 millibars; the second reaction temperature is 1000-1200 degrees Celsius, and the second reaction pressure is 100-200 millibars.

4. The epitaxial growth method of a semiconductor compound according to claim 1, wherein: The second reaction temperature is higher than the first reaction temperature, and the second reaction pressure is lower than the first reaction pressure.

5. The epitaxial growth method of a semiconductor compound according to claim 1, wherein The ratio of the second source gas flow rate to the first source gas flow rate is 500:1 to 900:1, wherein the first source gas flow rate is 80 to 200 ml / min, and the second source gas flow rate is 40 to 180 liters / min.

6. The epitaxial growth method of a semiconductor compound according to claim 1, wherein: When N is a natural number greater than 1, the step of determining, based on each of the growth rates, whether or not to introduce compensation gas through at least one of the compensation gas inlet channels to synchronously perform gas compensation processing comprises: The compensating gas is introduced into each compensating gas inlet channel, and the compensating gas flow provided by the compensating gas channel close to the middle of the gas injection device in two adjacent compensating gas inlet channels is controlled to be greater than or equal to the compensating gas flow provided by the other compensating gas inlet channel.

7. The epitaxial growth method according to claim 1, wherein: During the growth process of the second semiconductor material, the flow rate M of the fourth source gas is controlled. H The flow rate M of the third source gas O M H :M O It is 35:1~150:

1.

8. The epitaxial growth method of a semiconductor compound according to claim 7, characterized in that: During the growth process of the second semiconductor material, the flow rate M of the third source gas is controlled. O The flow rate of the fourth source gas M is 500-1000 ml / min. H 35~75 liters / minute.

9. The epitaxial growth method of a semiconductor compound according to claim 8, characterized in that: The fourth source gas includes hydrogen and a source gas containing Group V hydrides. During the growth process of the second semiconductor material, the flow rate of the source gas containing Group V hydrides provided through each of the process gas inlet channels is 1~5 liters / minute, and the flow rate of the hydrogen is 30~70 liters / minute.

10. The epitaxial growth method of a semiconductor compound according to claim 1, wherein: At least three compensation gas channels are arranged in the same radial direction of the gas injection device, and adjacent compensation gas inlet channels have the same spacing distance.

11. The epitaxial growth method of a semiconductor compound according to claim 1, wherein: At least two compensation gas channels are arranged in the same radial direction of the gas injection device, the distance between adjacent compensation gas channels is L1, the diameter of the supporting device for supporting the substrate in the epitaxial growth equipment is D, the distance between the bottom surface of the gas injection device and the top surface of the substrate is H, the ratio of D to L1 is 3:1~20:1, and the ratio of D to H is 10:1~40:

1.

12. The epitaxial growth method of a semiconductor compound according to claim 11, wherein: The L1 is 30-70 mm, the D is 250-600 mm, and the H is 15-25 mm.

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