Method, equipment and assembly for measuring thickness of oxidation film on surface of aluminum material

Abstract

The invention provides a method, device and assembly for measuring the thickness of an oxidation film on the surface of an aluminum material, and the method comprises the steps: receiving the aluminum material which comprises an aluminum material body and an oxidation film layer formed on the surface of the aluminum material body; sputtering the oxidation film layer at a preset position of the aluminum material by adopting an electron beam; receiving and analyzing Auger electrons generated by the aluminum material in response to the sputtering of the electron beam; the content change rate of the oxygen element is determined according to the generated Auger electrons, and the thickness of the oxidation film layer is determined based on the sputtering depth when the content change rate of the oxygen element reaches a preset value, the content change rate of the oxygen element is the ratio of the difference between the first atomic percent concentration of the oxygen element at the first sputtering depth and the second atomic percent concentration of the oxygen element at the second sputtering depth to the first atomic percent concentration, and the first sputtering depth is smaller than the second sputtering depth. According to the scheme, the thickness of the oxidation film layer can be conveniently, quickly and accurately judged without special treatment on the aluminum material.

Description

Technical Field

[0001] The present invention relates to the technical field of metal surface analysis, and particularly to a method, device and component for measuring the thickness of an oxide film on the surface of aluminum materials. Background Art

[0002] Aluminum and its alloys have a strong affinity for oxygen, and a dense and continuous oxide film is usually formed on their surfaces by natural oxygen adsorption to protect the base metal from further oxidation. The oxide film naturally adsorbed on the surface of aluminum materials usually has the following characteristics: the surface of the aluminum material is microscopically uneven, the thickness of the oxide film is uneven, the thickness of the oxide film is nanoscale, and the oxide film and the substrate diffuse into each other, etc. In addition, in different environments, the thickness and microstructure of the oxide film also vary greatly. These factors make it difficult to simply and accurately measure the thickness of the oxide film naturally adsorbed on the surface of aluminum alloys.

[0003] Therefore, a method, device and component for measuring the thickness of the oxide film on the surface of aluminum materials are needed to at least partially solve the above problems. Summary of the Invention

[0004] The present invention provides a method, device and component for measuring the thickness of an oxide film on the surface of aluminum materials, and this method can simply and accurately detect the thickness of the oxide film naturally adsorbed on the surface of aluminum materials.

[0005] According to the first aspect of the present invention, the method for measuring the thickness of the oxide film on the surface of aluminum materials includes:

[0006] Receiving an aluminum material, where the aluminum material includes an aluminum material body and an oxide film layer formed on the surface of the aluminum material body;

[0007] Sputtering the oxide film layer at a predetermined position of the aluminum material by using an electron beam;

[0008] Receiving and analyzing Auger electrons generated by the aluminum material in response to the sputtering of the electron beam;

[0009] Determining the content change rate of oxygen element according to the generated Auger electrons, and

[0010] Determining the thickness of the oxide film layer based on the sputtering depth when the content change rate of the oxygen element reaches a predetermined value,

[0011] wherein, the content change rate of the oxygen element is the ratio of the difference between the first atomic percentage concentration of the oxygen element at the first sputtering depth and the second atomic percentage concentration of the oxygen element at the second sputtering depth to the first atomic percentage concentration, and the first sputtering depth is less than the second sputtering depth.

[0012] Preferably, the predetermined value is less than or equal to 0.14% - 0.18%, and / or the difference between the first sputtering depth and the second sputtering depth is 0.5 - 1.5 nm.

[0013] Preferably, the sputtering depth D is calculated by the following formula:

[0014] D = T * V,

[0015] where T is the sputtering duration, which is the duration from the start of the sputtering operation by the electron beam until the change rate of the oxygen element content reaches the predetermined value, and V is the sputtering speed.

[0016] Preferably, the method further includes: correcting the sputtering speed.

[0017] Preferably, the correcting the sputtering speed includes: obtaining a standard speed and correcting the sputtering speed based on the standard speed,

[0018] wherein, the obtaining the standard speed includes:

[0019] receiving a standard sample, on the surface of which a standard oxide film layer is formed, and the standard thickness of the standard oxide film layer is known;

[0020] sputtering the standard oxide film layer with an electron beam and recording the standard duration used when the standard oxide film layer is sputtered completely;

[0021] obtaining the standard speed, the standard speed V standard = W standard / T standard, where W standard is the standard thickness and T standard is the standard duration.

[0022] Preferably, the standard sample is silicon and the standard oxide film layer is silicon dioxide.

[0023] Preferably, the electron beam is an argon ion beam.

[0024] Preferably, the predetermined position includes at least five regions on the aluminum material, and the thickness of the oxide film layer is the average value of the sputtering depths at the at least five regions.

[0025] Preferably, the method is carried out in a vacuum analysis chamber, and the vacuum degree of the analysis chamber is greater than or equal to 3.9×10 - 9 Torr.

[0026] Preferably, the electron beam sputters perpendicular to the oxide film layer.

[0027] On the other hand, the present invention also provides a device for measuring the thickness of the oxide film on the surface of aluminum material. The aluminum material includes an aluminum material body and an oxide film layer formed on the surface of the aluminum material body. The device includes:

[0028] An electron emission unit configured to be able to emit an electron beam to a predetermined position of the aluminum material to sputter the oxide film layer;

[0029] An energy analysis unit configured to be able to receive and analyze Auger electrons generated by the aluminum material in response to the sputtering of the electron beam; and

[0030] An information processing unit coupled to the energy analysis unit, the information processing unit being configured to be able to determine the change rate of the oxygen element content based on the generated Auger electrons, and determine the thickness of the oxide film layer based on the sputtering depth when the change rate of the oxygen element content reaches a predetermined value,

[0031] wherein the change rate of the oxygen element content is the ratio of the difference between the first atomic percentage concentration of the oxygen element at the first sputtering depth and the second atomic percentage concentration of the oxygen element at the second sputtering depth to the first atomic percentage concentration, and the first sputtering depth is less than the second sputtering depth.

[0032] Preferably, the electron emission unit and the energy analysis unit are coaxially arranged.

[0033] Preferably, the predetermined value is less than or equal to 0.14% - 0.18%, and / or the difference between the first sputtering depth and the second sputtering depth is 0.5 - 1.5 nm.

[0034] Preferably, the sputtering depth D is calculated by the following formula:

[0035] D = T * V,

[0036] where T is the sputtering duration, which is the duration from the start of the sputtering operation of the electron beam until the change rate of the oxygen element content reaches a predetermined value, and V is the sputtering speed.

[0037] Preferably, the electron beam is an argon ion beam.

[0038] Preferably, the predetermined position includes at least five regions on the aluminum material, and the thickness of the oxide film layer is the average value of the sputtering depths at the at least five regions.

[0039] The present invention also provides a component for measuring the thickness of the oxide film on the surface of aluminum material, the component including a receiving part and the device as described above, the receiving part being configured to be able to receive the aluminum material, and the aluminum material including an aluminum material body and an oxide film layer formed on the surface of the aluminum material body.

[0040] Preferably, the receiving part includes a rotatable sample stage having an arc-shaped receiving surface.

[0041] The method, device, and component for measuring the thickness of the aluminum surface oxide film according to the above solution have the following beneficial effects:

[0042] The above solution can conveniently, quickly, and accurately determine the thickness of the oxide film layer, and there is no need to perform special treatment on the aluminum material. It can be applied to aluminum materials with different chemical compositions, states, environments, and heat treatments, and is particularly suitable for measuring the oxide film layer formed on the aluminum surface by natural adsorption. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] To better understand the above and other objects, features, advantages, and functions of the present invention, reference may be made to the preferred embodiments shown in the accompanying drawings. The same or similar reference numerals in the drawings refer to the same or similar components. Those skilled in the art should understand that the drawings are intended to schematically illustrate the preferred embodiments of the present invention and have no restrictive effect on the scope of the present invention. The components in the drawings are not drawn to scale.

[0044] Figure 1 FIG. is a schematic block diagram of a component for measuring the thickness of the aluminum surface oxide film according to a preferred embodiment of the present invention;

[0045] Figure 2 FIG. is a distribution diagram of the atomic percentage concentration of each element varying with the sputtering depth obtained by the method for measuring the thickness of the aluminum surface oxide film according to a preferred embodiment of the present invention; and

[0046] Figure 3 FIG. is a flowchart of the method for measuring the thickness of the aluminum surface oxide film according to a preferred embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0047] Hereinafter, a holding mechanism according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. It can be understood that the following is only a preferred embodiment of the present invention, and those skilled in the art can think of other ways to implement the present invention based on the preferred embodiment, and other ways also fall within the scope of the present invention.

[0048] First of all, it should be noted that the directional terms and position terms in the present invention should be understood as relative directions and positions, rather than absolute directions and positions.

[0049] The following will refer to Figures 1-3 A detailed description will be given of the device, component, and method for measuring the thickness of the aluminum surface oxide film according to a preferred embodiment of the present invention.

[0050] Figure 1FIG. 0 shows a schematic block diagram of a measurement component according to a preferred embodiment of the present invention, which can be used to measure the thickness of an oxide film formed on an aluminum material. The aluminum material includes an aluminum material body and an oxide film layer formed on the surface of the aluminum material body. The measurement component according to the preferred embodiment of the present invention can particularly accurately and quickly measure the thickness of the oxide film layer formed on the surface of the aluminum material body by natural adsorption.

[0051] As Figure 1 shown, in a preferred embodiment, the measurement component includes a measurement device 100 and a receiving part 200. The receiving part 200 includes a rotatable sample stage, which has an arc-shaped receiving surface, and a plurality of samples to be measured can be placed on the arc-shaped receiving surface. During actual measurement, the samples to be measured can be sequentially positioned on the arc-shaped receiving surface. After the measurement of one sample is completed, the sample stage can be rotated to continue the measurement of the next sample.

[0052] The measurement device 100 can adopt an Auger electron spectrometer. An Auger electron spectrometer is a device that uses an electron beam with a certain energy to excite a sample to produce the Auger effect. The Auger process is the energy released when the outer electrons of an excited atom jump to a lower energy level, which is absorbed by other outer electrons, causing the latter to escape from the original ion, and the escaped electrons are called Auger electrons. By detecting the energy and intensity of the Auger electrons, the chemical composition and concentration of the elements at the excitation site can be obtained. Hereinafter, the measurement device 100 will be described in detail taking the Auger electron spectrometer as an example.

[0053] As Figure 1 shown, the Auger electron spectrometer includes an electron emission part 110, an energy analysis part 120, and an information processing part 130. After the aluminum material is placed in place on the receiving part, the electron emission part 110 can emit an electron beam to a predetermined position of the aluminum material to sputter the oxide film layer. Compared with other detection devices, the Auger electron spectrometer is more likely to generate an electron beam and the generated electron beam can be more clearly focused. The electron emission part 110 preferably can adopt an argon ion gun to emit an argon ion beam.

[0054] Preferably, the step of detecting the thickness of the oxide film of the aluminum material using the Auger electron spectrometer is carried out in a vacuum analysis chamber. That is to say, the Auger electron spectrometer and the receiving part need to be placed in the vacuum analysis chamber. As Figure 1 shown, the Auger electron spectrometer further includes a vacuum cleaning part 140, and the vacuum cleaning part 140 can perform a vacuum pumping operation on the analysis chamber. The vacuum degree of the analysis chamber is preferably greater than or equal to 3.9×10-9 Torr. This solution can prevent the surface of the aluminum material sample from immediately reforming a new oxide film layer due to contact with air after the oxide film layer is excited and sputtered, resulting in inaccurate measurement of the thickness of the oxide film layer.

[0055] The energy analysis unit 120 can receive Auger electrons generated by the sputtering of aluminum in response to an electron beam and analyze the received Auger electrons. In a preferred embodiment, the energy analysis unit 120 is arranged coaxially with the electron emission unit 110. The coaxial arrangement can reduce the shadow effect, thereby improving the electron collection efficiency. The energy analysis unit 120 can employ a CMA energy analyzer (cylindrical mirror analyzer), which can determine the components corresponding to the Auger electrons (such as Figure 2 carbon, oxygen, aluminum oxide, and aluminum shown in Figure 2 ) by analyzing the collected Auger electrons, and the CMA energy analyzer can know the number of Auger electrons corresponding to each component and obtain the atomic percentage concentration of each component based on the number of Auger electrons. The "atomic percentage concentration" described herein refers to the ratio of the content of a certain element to the sum of the contents of all elements. It can be understood that the atomic percentage concentration of each element will change with the change of the sputtering depth. For example,

[0056] shows the distribution diagram of the change of the atomic percentage concentration of each element with the sputtering depth.

[0057] The information processing unit 130 is coupled to the energy analysis unit 120. The information processing unit 130 can determine the change rate of the oxygen element content based on the generated Auger electrons and determine the thickness of the oxide film layer based on the sputtering depth when the change rate of the oxygen element content reaches a predetermined value. The change rate of the oxygen element content is defined as the ratio of the difference between the first atomic percentage concentration of the oxygen element at the first sputtering depth and the second atomic percentage concentration of the oxygen element at the second sputtering depth to the first atomic percentage concentration, and the first sputtering depth is less than the second sputtering depth.

[0058] Preferably, the predetermined value is less than or equal to 0.14% - 0.18%, and further preferably, the predetermined value is 0.16%. That is to say, when the change rate of the oxygen element content is less than or equal to 0.16%, it can be determined that the signal intensity of the oxygen element is in a stable stage at this time, and the oxide film layer has basically been sputtered. The sputtering depth at this time is the thickness of the oxide film layer. The difference between the first sputtering depth and the second sputtering depth is 0.5 - 1.5 nm, preferably 1 nm. That is to say, when the electron beam sputters 1 nm each time, the change rate of the oxygen element content can be detected. If the change rate of the oxygen element content is greater than 0.16%, sputtering can continue, and if the change rate of the oxygen element content is less than or equal to 0.16%, sputtering can be stopped and the sputtering depth at this time can be used as the thickness of the oxide film layer.

[0058] The sputtering depth D can be calculated by the following formula:

[0059] D = T * V,

[0060] Where T is the sputtering duration, which is the duration from the start of the sputtering operation by the electron beam until the change rate of the oxygen element content reaches a predetermined value, and V is the sputtering speed.

[0061] Preferably, the sputtering speed can be the speed calibrated and stored in the Auger electron spectrometer. Calibrating the sputtering speed can be carried out based on the standard speed obtained through testing.

[0062] The standard speed can be obtained by sputtering a standard sample with a known thickness of the oxide film. Preferably, the standard sample is silicon, and an oxide film layer, i.e., silicon dioxide, is formed on the surface of the silicon. The advantage of using silicon as the standard sample is that the interface between the silicon layer and the silicon dioxide layer is clear, there is no obvious mutual diffusion between the silicon layer and the silicon dioxide layer, and the oxygen element content contained in the silicon layer is extremely low. The thickness of the silicon dioxide formed on the surface of the silicon can be measured by various methods known in the art. For example, it can be measured by the optical method. For the sake of simplicity, it will not be elaborated here. When sputtering the standard sample with the electron beam, if the oxygen element content drops precipitously, it means that the silicon dioxide layer has been completely sputtered. At this time, the duration used when the silicon dioxide layer is sputtered can be recorded, which is the standard duration. The standard speed can be obtained by dividing the known standard thickness of the silicon dioxide layer by the standard duration, that is

[0063] V 标准 =W 标准 / T 标准 ,

[0064] where W 标准 is the standard thickness, and T 标准 is the standard duration.

[0065] After obtaining the standard speed, it can be used to calibrate the sputtering speed when sputtering the oxide film layer on the surface of the aluminum material body. That is to say, the sputtering speed can be set to be the same as the standard speed.

[0066] Preferably, when measuring the thickness of the oxide film layer on the surface of the aluminum material, sputtering can be performed on multiple regions, and the average value of multiple sputtering depths can be taken to improve the accuracy of the measurement results. That is to say, in actual operation, sputtering can be performed on the oxide film layer on the aluminum material in multiple regions, and the thickness of the oxide film layer can be taken as the average value of the sputtering depths of these multiple regions. Preferably, the multiple regions include at least five regions.

[0067] The following refers to Figure 3 a detailed description of the method for measuring the thickness of the oxide film on the surface of the aluminum material according to the preferred embodiment of the present invention.

[0068] In a preferred embodiment, the method for measuring the thickness of the oxide film on the surface of the aluminum material includes:

[0069] - Receive aluminum materials. Preferably, the receiving part 200 described above can be used to receive and position the aluminum material sample. In this way, the aluminum material sample can be placed on the rotatable sample stage. The size of the aluminum material can be set to 10*10 mm.

[0070] Preferably, before placing the aluminum material on the receiving part 200, the aluminum material can be cleaned to remove impurities on the aluminum material. Exemplarily, the surface of the aluminum material can be cleaned with acetone, then the solvent can be washed off with distilled water and dried with hot air.

[0071] - Sputter the oxide film layer at a predetermined position on the aluminum material using an electron beam. After or before placing the aluminum material sample, the parameters of the electron emission part 110 and the energy analysis part 120 can be set. Taking the argon ion gun and the CMA energy analyzer as an example, the high voltage of the argon ion gun can be set to 10 KV, the beam diameter can be set to 10 nm, and the CMA energy analyzer can be coaxially arranged with the argon ion gun to improve the electron collection efficiency. The energy resolution of the CMA energy analyzer can be set to 1‰. Preferably, when using the argon ion gun for sputtering operation, the argon ion beam is perpendicular to the oxide film layer, that is, the argon ion beam is arranged parallel to the surface normal of the oxide film layer.

[0072] - Receive and analyze the Auger electrons generated by the aluminum material in response to the sputtering of the electron beam. This step can be carried out using the CMA energy analyzer described above. The CMA energy analyzer can determine the components corresponding to the Auger electrons and the atomic percentage concentration of each component by analyzing the collected Auger electrons. As Figure 2 shown, as the sputtering depth changes, the atomic percentage concentrations of various components in the aluminum material sample, such as carbon, oxygen, aluminum oxide, aluminum, etc., also change accordingly.

[0073] - Determine the content change rate of oxygen element based on the generated Auger electrons. This step can be carried out using the information processing part 130 described above. The information processing part 130 can determine the content change rate of oxygen element based on the generated Auger electrons. The content change rate of oxygen element is defined as the ratio of the difference between the first atomic percentage concentration of oxygen element at the first sputtering depth and the second atomic percentage concentration of oxygen element at the second sputtering depth to the first atomic percentage concentration, and the first sputtering depth is less than the second sputtering depth. Preferably, the difference between the first sputtering depth and the second sputtering depth is 0.5 - 1.5 nm, preferably 1 nm. That is, the information processing part 130 can calculate the content change rate of oxygen element every time the electron beam sputters 1 nm.

[0074] - Determine the thickness of the oxide film layer based on the sputtering depth when the content change rate of oxygen element reaches a predetermined value. Preferably, the predetermined value is less than or equal to 0.14% - 0.18%, and further preferably, the predetermined value is 0.16%. That is to say, when the electron beam sputters 1 nm each time, if the content change rate of oxygen element is less than or equal to 0.16%, it can be determined that the signal intensity of oxygen element is in a stable stage at this time, and the oxide film layer has basically been sputtered. The sputtering depth at this time is the thickness of the oxide film layer. For example, as Figure 2 shown, when the sputtering depth is 28 nm, the signal intensity of oxygen element is in a stable stage, then the thickness of the oxide film is 28 nm.

[0075] The specific calculation method of the sputtering depth has been described in detail above with reference to the measuring device. For the sake of brevity, it will not be elaborated here.

[0076] In a preferred embodiment, after obtaining a sputtering depth, sputtering can be continued on multiple other regions of the aluminum sample in succession to obtain multiple sputtering depths, and the thickness of the oxide film layer can be the average value of the sputtering depths at multiple regions.

[0077] Preferably, the above measurement method is carried out in a vacuum analysis chamber, and the vacuum degree of the analysis chamber is greater than or equal to 3.9×10 -9 Torr. This solution can prevent the surface of the aluminum sample from immediately reforming a new oxide film layer due to contact with air after the oxide film layer is excited and sputtered, thus resulting in inaccurate measurement of the thickness of the oxide film layer.

[0078] According to the above solution of the present invention, it is possible to conveniently, quickly and accurately judge the thickness of the oxide film layer, and there is no need to perform special treatment on the aluminum material. It can be applied to aluminum materials with different chemical compositions, states, environments and heat treatments, and is particularly suitable for measuring the oxide film layer formed on the surface of aluminum materials by natural adsorption.

[0079] The above description of various embodiments of the present invention is provided for a person of ordinary skill in the relevant art for the purpose of description. It is not intended to exclude or limit the present invention to a single disclosed embodiment. As above, a person of ordinary skill in the art taught above will understand various alternatives and modifications of the present invention. Therefore, although some alternative embodiments have been specifically described, a person of ordinary skill in the art will understand or relatively easily develop other embodiments. The present invention is intended to include all alternatives, modifications and variations of the present invention described herein, as well as other embodiments falling within the spirit and scope of the present invention described above.

Claims

1. A method for measuring the thickness of the oxide film on the surface of aluminum materials, characterized in that, The method includes: Receiving an aluminum material, where the aluminum material includes an aluminum material body and an oxide film layer formed on the surface of the aluminum material body; Sputtering the oxide film layer at a predetermined position of the aluminum material using an electron beam; Receiving and analyzing Auger electrons generated by the aluminum material in response to the sputtering of the electron beam; Determining the content change rate of oxygen element according to the generated Auger electrons, and Determining the thickness of the oxide film layer based on the sputtering depth when the content change rate of the oxygen element reaches a predetermined value, where the content change rate of the oxygen element is the ratio of the difference between the first atomic percentage concentration of the oxygen element at the first sputtering depth and the second atomic percentage concentration of the oxygen element at the second sputtering depth to the first atomic percentage concentration, and the first sputtering depth is less than the second sputtering depth.

2. The method according to claim 1, characterized in that, The predetermined value is less than or equal to 0.14% - 0.18%, and / or the difference between the first sputtering depth and the second sputtering depth is 0.5 - 1.5 nm.

3. The method according to claim 1, characterized in that The sputtering depth D is calculated by the following formula: D = T * V, where T is the sputtering duration, which is the duration from the start of the sputtering operation of the electron beam until the content change rate of the oxygen element reaches a predetermined value, and V is the sputtering speed.

4. The method according to claim 3, wherein The method further includes: correcting the sputtering speed.

5. The method according to claim 4, wherein The correcting the sputtering speed includes: obtaining a standard speed and correcting the sputtering speed based on the standard speed, where the obtaining the standard speed includes: Receiving a standard sample, where a standard oxide film layer is formed on the surface of the standard sample, and the standard thickness of the standard oxide film layer is known; Sputtering the standard oxide film layer using an electron beam and recording the standard duration used when the standard oxide film layer is sputtered completely; Obtain the standard speed, the standard speed V 标准 = W 标准 / T 标准 , where W 标准 is the standard thickness, and T 标准 is the standard duration.

6. The method according to claim 5, wherein The standard sample is silicon, and the standard oxide film layer is silicon dioxide.

7. The method according to any one of claims 1-6, characterized in that, The electron beam is an argon ion beam.

8. The method according to any one of claims 1-6, characterized in that, The predetermined position includes at least five regions on the aluminum material, and the thickness of the oxide film layer is the average value of the sputtering depths at the at least five regions.

9. The method according to any one of claims 1-6, characterized in that, The method is carried out in a vacuum analysis chamber, and the vacuum degree of the analysis chamber is greater than or equal to 3.9×10 -9 Torr.

10. The method according to any one of claims 1-6, characterized in that, The electron beam sputters perpendicular to the oxide film layer.

11. An apparatus for measuring the thickness of an oxide film on the surface of aluminum material, the aluminum material including an aluminum material body and an oxide film layer formed on the surface of the aluminum material body, characterized in that, The device includes: An electron emission part configured to be able to emit an electron beam to a predetermined position of the aluminum material to sputter the oxide film layer; An energy analysis part configured to be able to receive and analyze Auger electrons generated by the aluminum material in response to the sputtering of the electron beam; and An information processing part coupled to the energy analysis part, and the information processing part is configured to be able to determine the content change rate of oxygen element according to the generated Auger electrons and determine the thickness of the oxide film layer based on the sputtering depth when the content change rate of the oxygen element reaches a predetermined value, where the content change rate of the oxygen element is the ratio of the difference between the first atomic percentage concentration of the oxygen element at the first sputtering depth and the second atomic percentage concentration of the oxygen element at the second sputtering depth to the first atomic percentage concentration, and the first sputtering depth is less than the second sputtering depth.

12. The device according to claim 11, wherein, The electron emission part and the energy analysis part are coaxially arranged.

13. The device according to claim 11, characterized in that, The predetermined value is less than or equal to 0.14% - 0.18%, and / or the difference between the first sputtering depth and the second sputtering depth is 0.5 - 1.5 nm.

14. The device according to claim 11, characterized in that, The sputtering depth D is calculated by the following formula: D = T * V, where T is the sputtering duration, which is the duration from the start of the sputtering operation by the electron beam until the change rate of the oxygen element content reaches the predetermined value, and V is the sputtering speed.

15. The device according to any one of claims 11 - 14, characterized in that, The electron beam is an argon ion beam.

16. The device according to any one of claims 11 - 14, characterized in that, The predetermined positions include at least five regions on the aluminum material, and the thickness of the oxide film layer is the average value of the sputtering depths at the at least five regions.

17. A component for measuring the thickness of the oxide film on the surface of aluminum materials, characterized in that, The assembly includes a receiving part and the device according to any one of claims 11 - 16, the receiving part being configured to be able to receive aluminum material, the aluminum material including an aluminum material body and an oxide film layer formed on the surface of the aluminum material body.

18. The component according to claim 17, characterized in that, The receiving part includes a rotatable sample stage, and the rotatable sample stage has an arc-shaped receiving surface.

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