High-temperature-resistant testing method and testing device for photovoltaic tube
By monitoring the changes in the hollow structure of photovoltaic tubes under ultraviolet light in real time, and deciding whether to conduct heating and material evaluation tests based on the results, the problem of inefficient photovoltaic tube iterative testing is solved, improving the test efficiency and reliability of the results.
Patent Information
- Application Number
- CN202510486126.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-17
- Publication Date
- 2025-06-24
- Estimated Expiration
- 2045-04-17
AI Technical Summary
The detection scheme is inefficient during the iterative testing of existing photovoltaic tubes, which results in a large amount of manpower and material resources required for the photovoltaic tubes iteratively.
A high-temperature resistance test method for photovoltaic tubes is adopted. By irradiating ultraviolet rays to standard photovoltaic tubes and test photovoltaic tubes respectively, and ultrasonic detection is carried out to monitor whether the cavity structure exceeds the preset number in real time. When the hollow structure of a standard photovoltaic tube exceeds the threshold earlier than the test photovoltaic tube, heat treatment is performed and thermal evaluation test is performed; otherwise, material evaluation test is performed directly.
Improve the efficiency of photovoltaic tube testing, avoid unnecessary heating steps, enhance the reliability of test results, and eliminate the interference of environmental and operational factors on the test results by simultaneously testing standard photovoltaic tubes and test photovoltaic tubes.
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Figure CN120195091A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of photovoltaic device testing, and particularly to a high-temperature resistance testing method and testing device for a photovoltaic tube. Background Art
[0002] A photovoltaic device is a semiconductor device that directly converts light energy into electrical energy using the photovoltaic effect. It is a core component of a solar power generation system and can generate current when exposed to sunlight, providing clean and renewable energy for people. To ensure the safe and efficient operation of a photovoltaic system, it is necessary to protect and isolate the electrical wires for power output. Correspondingly, a photovoltaic tube needs to be designed. Specifically, a photovoltaic tube is a tubular structure used to coat and protect electrical wires, having good weather resistance, mechanical strength, and insulation performance, and can effectively prevent the influence of the external environment on the electrical wires, such as mechanical damage, moisture intrusion, and ultraviolet radiation.
[0003] In the existing technical solutions, the performance testing of photovoltaic tubes usually refers to international standards such as IEC 61215 and IEC 61646; for example, when performing a thermal test, the photovoltaic tube needs to be placed in a thermostat for heating, and when performing an ultraviolet test, the photovoltaic tube needs to be placed under an ultraviolet light source; after each test, its performance is evaluated separately. The above existing technical solutions are applicable to the quality certification of products, but because of low efficiency, they are not applicable to the laboratory iteration scenario. If item-by-item tests are performed on the intermediate iterative photovoltaic tubes, a large amount of manpower and material resources are required, and different tests are performed on each generation of photovoltaic tubes, which has the disadvantage of low efficiency. Summary of the Invention
[0004] The purpose of the present invention is to provide a high-temperature resistance testing method and testing device for a photovoltaic tube, so as to solve the problem of low efficiency of the detection scheme used in the iterative testing process of the photovoltaic tube.
[0005] To achieve this purpose, the present invention adopts the following technical solutions: A high-temperature resistance testing method for a photovoltaic tube, comprising: Irradiating ultraviolet rays on a standard photovoltaic tube and a test photovoltaic tube respectively; Performing ultrasonic detection on the standard photovoltaic tube and the test photovoltaic tube respectively, and judging whether the number of cavity structures in the standard photovoltaic tube or the test photovoltaic tube exceeds a preset first quantity; When the cavity structure in the standard photovoltaic tube exceeds the first quantity earlier than that in the test photovoltaic tube, heating the test photovoltaic tube and maintaining a preset heating time; performing a thermal evaluation test on the heated test photovoltaic tube; When the cavity structure in the test photovoltaic tube exceeds the first quantity earlier than that in the standard photovoltaic tube, performing a material evaluation test on the test photovoltaic tube.
[0006] Optionally, the material evaluation test for the test photovoltaic tube includes: Taking out a test sample from the test photovoltaic tube and a standard sample from the standard photovoltaic tube, respectively performing Fourier transform infrared spectroscopy analysis on the test sample and the standard sample to obtain a test peak diagram and a standard peak diagram; comparing the test peak diagram with the standard peak diagram to obtain the chemical degradation ratio of the test sample compared to the standard sample; Taking out a test sample from the test photovoltaic tube and a standard sample from the standard photovoltaic tube, respectively performing mechanical property tests on the test sample and the standard sample to obtain a test mechanical property value and a standard mechanical property value; comparing the test mechanical property value with the standard mechanical property value to obtain the mechanical property degradation ratio of the test sample compared to the standard sample.
[0007] Optionally, the comparing the test peak diagram with the standard peak diagram to obtain the chemical degradation ratio of the test sample compared to the standard sample includes: Performing baseline correction and normalization processing on the test peak diagram and the standard peak diagram; Identifying characteristic absorption peaks in the test peak diagram and the standard peak diagram, where the characteristic absorption peaks correspond to characteristic functional groups of the material used in the photovoltaic tube; Measuring the peak intensities of the respective characteristic absorption peaks in the test peak diagram and the standard peak diagram to obtain the absorption intensity values of the corresponding functional groups; Calculating the absorption intensity ratio of the characteristic functional groups in the test sample and the standard sample to obtain a degradation index; According to the degradation index J1 of the test sample, the degradation index J2 of the standard sample, and the formula for the chemical degradation ratio, obtaining the chemical degradation ratio; the formula for the chemical degradation ratio is: H1 = (J1 - J2) / J2; H J is the chemical degradation ratio.
[0008] Optionally, the respectively performing mechanical property tests on the test sample and the standard sample to obtain a test mechanical property value and a standard mechanical property value; comparing the test mechanical property value with the standard mechanical property value to obtain the mechanical property degradation ratio of the test sample compared to the standard sample includes: Respectively performing tensile property tests on the test sample and the standard sample, measuring and recording their tensile strengths to obtain the test tensile strength value σ T of the test sample and the standard tensile strength value σ S ; Respectively performing impact property tests on the test sample and the standard sample, measuring and recording their impact toughnesses to obtain the test impact toughness value T T of the test sample and the standard impact toughness value T S ; Calculate the tensile strength degradation ratio H of the test sample separately σ and the impact toughness degradation ratio H T , where , ; Use the weighted average formula to calculate the tensile strength degradation ratio Hσ and the impact toughness degradation ratio H T of the mechanical property degradation ratio H2 = w σ ·H σ + w T ·H T , where, w σ + w T = 1; w σ and w T are the weight coefficients of the tensile strength and the impact toughness respectively.
[0009] Optionally, the material evaluation test for the tested photovoltaic tube further includes: Judging whether the chemical degradation ratio of the test sample is lower than the preset chemical degradation threshold, and whether the mechanical property degradation ratio of the test sample is lower than the preset mechanical property degradation threshold; If so, mark the tested photovoltaic tube corresponding to the test sample as a type-II photovoltaic tube; if not, mark the tested photovoltaic tube corresponding to the test sample as a non-conforming photovoltaic tube.
[0010] Optionally, the thermal evaluation test for the heated tested photovoltaic tube includes: Take out the test sample from the tested photovoltaic tube and take out the standard sample from the standard photovoltaic tube, perform a breakdown voltage test on the test sample and the standard sample respectively to obtain the test breakdown voltage value and the standard breakdown voltage value; compare the test breakdown voltage value and the standard breakdown voltage value to obtain the insulation degradation ratio of the test sample compared with the standard sample; Take out the test sample from the tested photovoltaic tube and take out the standard sample from the standard photovoltaic tube, perform a mechanical property test on the test sample and the standard sample respectively to obtain the test mechanical property value and the standard mechanical property value; compare the test mechanical property value with the standard mechanical property value to obtain the mechanical property degradation ratio of the test sample compared with the standard sample.
[0011] Optionally, judge whether the insulation degradation ratio of the test sample is lower than the preset insulation degradation threshold, and whether the mechanical property degradation ratio of the test sample is lower than the preset mechanical property degradation threshold; If so, mark the tested photovoltaic tube corresponding to the test sample as a type-I photovoltaic tube; if not, mark the tested photovoltaic tube corresponding to the test sample as a type-II photovoltaic tube.
[0012] A testing device for a photovoltaic tube, comprising a standard area and a testing area. The standard area is used to place a standard photovoltaic tube, and the testing area is used to place a testing photovoltaic tube. Ultraviolet irradiation devices and heating devices are provided outside both the standard area and the testing area; The testing device for the photovoltaic tube adopts the high-temperature resistance testing method as described above.
[0013] Compared with the prior art, the present invention has the following beneficial effects: In the high-temperature resistance testing method and testing device for the photovoltaic tube provided by the present invention, during the testing process, ultraviolet rays are respectively irradiated on the standard photovoltaic tube and the testing photovoltaic tube, and ultrasonic detection is performed on both of them to monitor in real time whether the number of cavity structures therein exceeds a preset number. When the cavity structure of the standard photovoltaic tube exceeds the threshold earlier than that of the testing photovoltaic tube, it indicates that the testing photovoltaic tube has better tolerance under ultraviolet irradiation. At this time, the testing photovoltaic tube is subjected to a heating treatment and maintained for a preset heating time, and then a thermal evaluation test is carried out to further evaluate its high-temperature resistance performance. On the contrary, a material evaluation test is directly carried out on the testing photovoltaic tube to analyze the performance loss of the testing photovoltaic tube. The above solution avoids unnecessary heating steps, improves the testing efficiency, and at the same time, by testing the standard photovoltaic tube and the testing photovoltaic tube simultaneously, effectively eliminates the interference of environmental and operating factors on the testing results and improves the reliability of the results. Description of the Drawings
[0014] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the following drawings are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained according to these drawings.
[0015] The structures, ratios, sizes, etc. shown in the drawings of this specification are only used to cooperate with the content disclosed in the specification for those who are familiar with this technology to understand and read, and are not used to limit the limiting conditions under which the present invention can be implemented. Therefore, they do not have technical essential meanings. Any modification of the structure, change of the proportional relationship, or adjustment of the size, without affecting the effects that the present invention can produce and the purposes that can be achieved, should still fall within the scope that can be covered by the technical content disclosed by the present invention.
[0016] Figure 1 It is a flow schematic diagram of the high-temperature resistance testing method for the photovoltaic tube provided by the embodiment of the invention. Detailed Embodiments
[0017] In order to make the object, features, and advantages of the present invention more obvious and understandable, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the embodiments described below are only a part of the embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
[0018] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the accompanying drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present invention. It should be noted that when a component is considered to be "connected" to another component, it may be directly connected to the other component or there may be intermediate components present.
[0019] The technical solutions of the present invention will be further described below in conjunction with the accompanying drawings and through specific embodiments.
[0020] Embodiment 1: The high-temperature resistance test method for photovoltaic tubes provided in this embodiment is applicable to the scenario of quickly screening photovoltaic tubes in a laboratory scenario. In this embodiment, by optimizing the high-temperature resistance test method for photovoltaic tubes, compared with the prior art, the efficiency of screening high-quality photovoltaic tubes can be improved.
[0021] As Figure 1 shown, the high-temperature resistance test method for photovoltaic tubes provided in this embodiment includes: S100. Irradiate ultraviolet rays on the standard photovoltaic tube and the test photovoltaic tube respectively; S200. Perform ultrasonic detection on the standard photovoltaic tube and the test photovoltaic tube respectively, and determine whether the cavity structure in the standard photovoltaic tube or the test photovoltaic tube exceeds a preset first quantity; among them, the first quantity can be measured by calculating the average cavity quantity of multiple groups of standard photovoltaic tubes after performing multiple groups of ultraviolet irradiation experiments on the standard photovoltaic tube and detecting the cavity quantity by ultrasonic waves; S300. When the cavity structure in the standard photovoltaic tube exceeds the first quantity earlier than the test photovoltaic tube, heat the test photovoltaic tube and continue for a preset heating time; perform a thermal evaluation test on the heated test photovoltaic tube; Among them, when the void structure in the standard photovoltaic tube exceeds the first quantity earlier than that in the test photovoltaic tube, it means that under the same ultraviolet irradiation conditions, the defects such as voids and cracks generated inside the standard photovoltaic tube reach the preset critical quantity faster and earlier than those in the test photovoltaic tube, indicating that the test photovoltaic tube performs better in terms of ultraviolet aging resistance and its material has a stronger resistance to ultraviolet radiation. In this case, the test photovoltaic tube is heated and the preset heating time is maintained, and then a thermal evaluation test is carried out on the heated test photovoltaic tube to further evaluate its tolerance under high-temperature conditions based on the excellent performance shown by the test photovoltaic tube in the ultraviolet environment.
[0022] S400. When the void structure in the test photovoltaic tube exceeds the first quantity earlier than that in the standard photovoltaic tube, a material evaluation test is carried out on the test photovoltaic tube.
[0023] Among them, when the void structure in the test photovoltaic tube exceeds the first quantity earlier than that in the standard photovoltaic tube, this means that under ultraviolet irradiation conditions, the generation rate of internal defects in the test photovoltaic tube is faster than that in the standard photovoltaic tube, and its ultraviolet aging resistance performance is poor. At this time, skipping the heating step and directly carrying out a material evaluation test on the test photovoltaic tube can reduce the processing time of the test photovoltaic tube, directly carry out a material evaluation test on the test photovoltaic tube including chemical analysis and mechanical property analysis, identify the problems existing in the test photovoltaic tube in the ultraviolet environment, analyze the severity of the problem, and analyze the performance loss of the test photovoltaic tube.
[0024] Specifically, in the high-temperature test method of the photovoltaic tube in this embodiment, during the test, ultraviolet rays are respectively irradiated on the standard photovoltaic tube and the test photovoltaic tube, and ultrasonic detection is carried out on both of them to monitor in real time whether the void structure exceeds the preset quantity. When the void structure of the standard photovoltaic tube exceeds the threshold earlier than that of the test photovoltaic tube, it indicates that the test photovoltaic tube has better tolerance under ultraviolet irradiation. At this time, the test photovoltaic tube is heated and the preset heating time is maintained, and then a thermal evaluation test is carried out to further evaluate its high-temperature resistance performance. On the contrary, a material evaluation test is directly carried out on the test photovoltaic tube to analyze the performance loss of the test photovoltaic tube. The above solution avoids unnecessary heating steps, improves the test efficiency, and at the same time effectively eliminates the interference of environmental and operation factors on the test results by testing the standard photovoltaic tube and the test photovoltaic tube simultaneously, improving the reliability of the results.
[0025] Specifically, the step of respectively irradiating ultraviolet rays on the standard photovoltaic tube and the test photovoltaic tube in step S100 specifically includes: S101. Provide an arched quartz glass cover. An air inlet pipe is arranged at one end of the quartz glass cover, and an air outlet pipe is arranged at the other end. An external hot air device can inject hot air flow into the quartz glass cover through the air inlet pipe. The temperature of the hot air flow is determined by the hot air device, and the hot air device can set the hot air flow according to the temperature in the subsequent steps. S102. Cover the standard photovoltaic tube and the test photovoltaic tube in the corresponding quartz glass covers respectively, and irradiate ultraviolet rays into the quartz glass covers through an ultraviolet irradiation device respectively.
[0026] Specifically, the ultrasonic detection of the standard photovoltaic tube and the test photovoltaic tube in step S200 includes: S201. Irradiate the photovoltaic tube in the quartz glass cover with high-frequency 5 - 10 MHz through an ultrasonic probe to obtain an ultrasonic echo signal. The quartz glass cover neither blocks ultraviolet rays nor high-frequency ultrasonic waves, enabling ultrasonic detection of the photovoltaic tube during ultraviolet irradiation. S202. Perform band-pass filtering and denoising processing on the ultrasonic echo signal to reduce the multiple reflection interference of the glass interface on the signal. S203. Identify the voids or cracks in the photovoltaic tube by analyzing parameters such as the delay time and amplitude change of the ultrasonic echo signal, and obtain the number of void structures in the photovoltaic tube. Among them, the delay time reflects the presence of voids; the amplitude change reflects the density of voids. Combining the above parameters, estimate the number of holes in the standard photovoltaic tube and the test photovoltaic tube respectively according to a unified standard, so as to facilitate subsequent judgment of which photovoltaic tube's void structure can reach the first number faster.
[0027] Further, the material evaluation test of the test photovoltaic tube in step S400 includes: S410. Take out test samples from the test photovoltaic tube and standard samples from the standard photovoltaic tube, and perform Fourier transform infrared spectroscopy analysis on the test samples and the standard samples respectively to obtain a test peak diagram and a standard peak diagram. Compare the test peak diagram with the standard peak diagram to obtain the chemical degradation ratio of the test sample compared with the standard sample. Specifically, grind the two samples carefully and sieve them to obtain powders with uniform particle size. Then adopt the tablet pressing method, mix the sample and potassium bromide (KBr) in a mass ratio of 1:100, and press them into a transparent thin slice under high pressure for use by Fourier transform infrared spectroscopy analysis equipment. The Fourier transform infrared spectroscopy analysis equipment is well-known to those skilled in the art and will not be elaborated here. Then, scan their spectra respectively through the Fourier transform infrared spectroscopy analysis equipment to obtain their respective infrared absorption spectra, that is, the test peak diagram and the standard peak diagram. S420. Take out a test sample from the test photovoltaic tube, take out a standard sample from the standard photovoltaic tube, perform mechanical property tests on the test sample and the standard sample respectively, and obtain test mechanical property values and standard mechanical property values; compare the test mechanical property values with the standard mechanical property values to obtain the mechanical property degradation ratio of the test sample compared to the standard sample.
[0028] Specifically, test samples and standard samples are cut out from the test photovoltaic tube and the standard photovoltaic tube respectively, and the test samples and the standard samples are respectively placed in corresponding mechanical property testing equipment to measure the test mechanical property values and the standard mechanical property values; the mechanical property testing equipment used includes but is not limited to tensile testing machines, impact testing machines, etc.
[0029] Furthermore, the comparison of the test peak graph and the standard peak graph in step S410 to obtain the chemical degradation ratio of the test sample compared to the standard sample includes: S411, performing baseline correction and normalization processing on the test peak graph and the standard peak graph; The above two sets of spectra are baseline corrected to eliminate the influence of background noise and baseline drift. Then, the spectra are normalized to make the absorption intensity between samples comparable. Usually, an internal reference peak that is not affected by aging is selected for normalization, such as carbon-hydrogen bond (CH). S412, identifying characteristic absorption peaks in the test wave peak graph and the standard wave peak graph, the characteristic absorption peaks corresponding to characteristic functional groups of materials used in the photovoltaic tube; illustratively, carbonyl, hydroxyl, vinyl double bond, etc. may be selected according to the material of the photovoltaic tube; S413, measuring the peak intensity of each characteristic absorption peak in the test peak graph and the standard peak graph to obtain the corresponding absorption intensity value of each functional group; S414, calculating the absorption intensity ratio of the characteristic functional groups in the test sample and the standard sample to obtain a degradation index; S415. According to the degradation index J1 of the test sample, the degradation index J2 of the standard sample and the formula of the chemical degradation ratio, the chemical degradation ratio is obtained; the formula of the chemical degradation ratio is: H1=(J1-J2) / J2; H1 is the chemical degradation ratio.
[0030] It can be understood that the degradation index J1 reflects the peak change value of a functional group of the test sample before and after being irradiated with ultraviolet light, and the degradation index J2 reflects the peak change value of a functional group of the standard sample before and after being irradiated with ultraviolet light, which means that the peak change value of the test sample is greater than that of the standard sample. For example, if the degradation index J1 is 0.15 and the degradation index J2 is 0.05, the calculated chemical degradation ratio H1 is 200%, which reflects the degree of chemical degradation of the test photovoltaic tube compared with the standard photovoltaic tube.
[0031] Further, in step S420, the mechanical property tests are respectively carried out on the test sample and the standard sample to obtain the test mechanical property value and the standard mechanical property value; comparing the test mechanical property value with the standard mechanical property value to obtain the mechanical property deterioration ratio of the test sample compared with the standard sample, including: S421. Respectively carry out tensile property tests on the test sample and the standard sample, measure and record their tensile strengths, and obtain the test tensile strength value σ T of the test sample and the standard tensile strength value σ S of the standard sample; S422. Respectively carry out impact property tests on the test sample and the standard sample, measure and record their impact toughnesses, and obtain the test impact toughness value T T of the test sample and the standard impact toughness value T S of the standard sample; S423. Calculate the tensile strength deterioration ratio H σ and the impact toughness deterioration ratio H T of the test sample respectively, where , ; S424. Use the weighted average formula to calculate the mechanical property deterioration ratio H2 of the tensile strength deterioration ratio Hσ and the impact toughness deterioration ratio H T as H2 = w σ ·H σ + w T ·H T , where w σ + w T = 1; w σ and w T are the weight coefficients of the tensile strength and the impact toughness respectively.
[0032] Among them, the weight coefficients of the tensile strength and the impact toughness are set according to the application scenario of the photovoltaic tube. For example, in a scenario with more static loads, the weight coefficient w σ of the tensile strength is set to 0.7; for example, in a scenario with larger wind loads, the weight coefficient w T of the impact toughness is set to 0.7.
[0033] Further, the material evaluation test on the test photovoltaic tube in step S400 further includes: S430. Judge whether the chemical deterioration ratio of the test sample is lower than the preset chemical deterioration threshold and whether the mechanical property deterioration ratio of the test sample is lower than the preset mechanical property deterioration threshold; for example, the chemical deterioration threshold can be set to 0.2, and the mechanical property deterioration threshold can be set to 0.05; it should be noted that if the mechanical property deterioration threshold is negative, it means that the mechanical property of the test photovoltaic tube has been improved in the short term.
[0034] S440. If so, mark the test photovoltaic tube corresponding to the test sample as a type-II photovoltaic tube; if not, mark the test photovoltaic tube corresponding to the test sample as a non-conforming photovoltaic tube.
[0035] It can be understood that when there are more voids in the test sample than in the standard sample, but the mechanical properties deteriorate less, or even the mechanical properties are enhanced, the following situations may occur: 1. Under the action of ultraviolet irradiation, cross-linking reactions occur in the polymer chains in the material, forming a more compact three-dimensional network structure. In the short term, the attenuation of mechanical properties is reduced, or even the mechanical properties of the material are improved; 2. Microvoids are formed inside, triggering local stress concentration and improving the energy absorption capacity; 3. The existence of voids enables the material to undergo microscopic deformation when stressed, perform stress relaxation, and avoid early failure caused by stress concentration... This is related to parameters such as the material ratio and molding process of the test photovoltaic tube. Through this step, type-II photovoltaic tubes can be screened out. These type-II photovoltaic tubes have relatively reliable mechanical properties during short-term outdoor use and are suitable for short-term or one-time power generation projects, outdoor non-load line connections, and other scenarios. Non-conforming photovoltaic tubes, on the other hand, are prone to deformation and aging under ultraviolet irradiation and are difficult to maintain their structure, and can be quickly screened out from the experimental objects.
[0036] Based on the above embodiments, the thermal evaluation test of the heated test photovoltaic tube in step S300 includes: S310. Take out the test sample from the test photovoltaic tube and the standard sample from the standard photovoltaic tube, and perform a breakdown voltage test on the test sample and the standard sample respectively to obtain the test breakdown voltage value and the standard breakdown voltage value; compare the test breakdown voltage value and the standard breakdown voltage value to obtain the insulation deterioration ratio of the test sample compared to the standard sample.
[0037] Insulation deterioration ratio , where Vs is the breakdown voltage value of the standard sample and Vt is the breakdown voltage value of the test sample.
[0038] S320. Take out the test sample from the test photovoltaic tube and the standard sample from the standard photovoltaic tube, and perform a mechanical property test on the test sample and the standard sample respectively to obtain the test mechanical property value and the standard mechanical property value; compare the test mechanical property value with the standard mechanical property value to obtain the mechanical property deterioration ratio of the test sample compared to the standard sample. The calculation method of this step is similar to that of step S420 and will not be elaborated in this embodiment.
[0039] Furthermore, the thermal evaluation test of the heated test photovoltaic tube in step S300 further includes: S330. Determine whether the insulation deterioration ratio of the test sample is lower than a preset insulation deterioration threshold and whether the mechanical property deterioration ratio of the test sample is lower than a preset mechanical property deterioration threshold. The insulation deterioration threshold is set to -0.1 to 0, and the mechanical property deterioration threshold is set to -0.05 to 0, which means that in subsequent steps, its performance needs to be better than that of the standard sample to meet the requirements of a certain type of photovoltaic tube.
[0040] S340. If so, mark the test photovoltaic tube corresponding to the test sample as a type-I photovoltaic tube; if not, mark the test photovoltaic tube corresponding to the test sample as a type-II photovoltaic tube. It can be understood that through the withstand voltage breakdown test and the mechanical property test, the insulation performance and mechanical properties of the heated test photovoltaic tube and the standard photovoltaic tube are compared, the insulation deterioration ratio and the mechanical property deterioration ratio are calculated, and the performance of the photovoltaic tube is further distinguished. The test photovoltaic tube can be classified into a type-I photovoltaic tube with higher performance requirements and a type-II photovoltaic tube included in step S440. Thus, through two environmental impact steps and corresponding test steps, the test photovoltaic tubes are divided into type-I photovoltaic tubes (more suitable for long-term load scenarios), type-II photovoltaic tubes (suitable for short-term and / or low-load scenarios), and unqualified photovoltaic tubes. Furthermore, qualified products can be preliminarily screened and classified from many types of photovoltaic tubes in the laboratory quickly, which is convenient for more comprehensive detection of the classified photovoltaic tubes.
[0041] Embodiment 2: This embodiment also provides a test device for photovoltaic tubes, including a standard area and a test area. The standard area is used to place standard photovoltaic tubes, and the test area is used to place test photovoltaic tubes. Ultraviolet irradiation devices, heating devices, and ultrasonic probes are arranged outside both the standard area and the test area. Quartz glass covers are provided outside both the standard area and the test area. The heating device includes an air inlet pipe provided at one end of the quartz glass cover and an air outlet pipe provided at the other end of the quartz glass cover. The external hot air device can inject hot air flow into the quartz glass cover through the air inlet pipe. The test device for photovoltaic tubes adopts the high-temperature resistance test method as in Embodiment 1. In addition, in order to execute step S300 and step S400, the test device further includes equipment such as Fourier transform infrared spectroscopy analysis equipment, a tensile testing machine, an impact testing machine, and a withstand voltage breakdown test.
[0042] As described above, the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them. Although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements for some of the technical features. However, these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the present invention in each embodiment.
Claims
1. A high temperature resistance test method for a photovoltaic tube, characterized in that: include: Irradiate the standard photovoltaic tube and the test photovoltaic tube with ultraviolet rays respectively; Performing ultrasonic testing on the standard photovoltaic tube and the test photovoltaic tube respectively, and determining whether the hollow structure in the standard photovoltaic tube or the test photovoltaic tube exceeds a preset first quantity; When the number of void structures in the standard photovoltaic tube exceeds the first number earlier than that in the test photovoltaic tube, the test photovoltaic tube is heated for a preset heating time; and a thermal evaluation test is performed on the heated test photovoltaic tube; When the void structure in the test photovoltaic tube exceeds the first quantity earlier than that in the standard photovoltaic tube, a material evaluation test is performed on the test photovoltaic tube.
2. A high temperature resistance testing method for a photovoltaic tube according to claim 1, characterized in that: The material evaluation test for the test photovoltaic tube includes: Taking out a test sample from the test photovoltaic tube, taking out a standard sample from the standard photovoltaic tube, performing Fourier transform infrared spectroscopy analysis on the test sample and the standard sample respectively to obtain a test peak graph and a standard peak graph; comparing the test peak graph with the standard peak graph to obtain a chemical degradation ratio of the test sample compared to the standard sample; A test sample is taken out from the test photovoltaic tube, and a standard sample is taken out from the standard photovoltaic tube. Mechanical properties tests are performed on the test sample and the standard sample respectively to obtain test mechanical property values and standard mechanical property values; the test mechanical property values are compared with the standard mechanical property values to obtain the mechanical property degradation ratio of the test sample compared with the standard sample.
3. A high temperature resistance testing method for a photovoltaic tube according to claim 2, characterized in that: The comparing the test peak graph with the standard peak graph to obtain the chemical degradation ratio of the test sample compared to the standard sample includes: Performing baseline correction and normalization processing on the test peak graph and the standard peak graph; Identify characteristic absorption peaks in the test peak graph and the standard peak graph, wherein the characteristic absorption peaks correspond to characteristic functional groups of materials used in the photovoltaic tube; Measure the peak intensity of each characteristic absorption peak in the test peak graph and the standard peak graph to obtain the corresponding absorption intensity value of each functional group; The absorption intensity ratio of the characteristic functional groups in the test sample and the standard sample is calculated to obtain the degradation index; According to the degradation index J1 of the test sample, the degradation index J2 of the standard sample and the formula of chemical degradation ratio, the chemical degradation ratio is obtained; the formula of chemical degradation ratio is: H1= (J1-J2) / J2; H J is the chemical degradation ratio.
4. A high temperature resistance testing method for a photovoltaic tube according to claim 2, characterized in that: The mechanical properties of the test sample and the standard sample are tested respectively to obtain the test mechanical property value and the standard mechanical property value; Comparing the test mechanical property value with the standard mechanical property value to obtain the mechanical property degradation ratio of the test sample compared to the standard sample, including: The tensile properties of the test sample and the standard sample are tested respectively, and their tensile strength is measured and recorded to obtain the test tensile strength value σ of the test sample. T And the standard tensile strength value of the standard sample σ S ; The impact performance of the test sample and the standard sample were tested respectively, and their impact toughness was measured and recorded to obtain the test impact toughness value T of the test sample. T And the standard impact toughness value T of the standard sample S ; Calculate the tensile strength degradation ratio H of the test samples respectively σ And the impact toughness degradation ratio H T ,in, , ; The weighted average formula is used to calculate the tensile strength degradation ratio Hσ and the impact toughness degradation ratio H T The mechanical properties degradation ratio H2=w σ ·H σ +w T ·H T , where w σ +w T =1; w σ and w T are the weight coefficients of tensile strength and impact toughness respectively.
5. A high temperature resistance testing method for a photovoltaic tube according to claim 2, characterized in that: The material evaluation test on the test photovoltaic tube also includes: Determine whether the chemical degradation ratio of the test sample is lower than a preset chemical degradation threshold, and whether the mechanical property degradation ratio of the test sample is lower than a preset mechanical property degradation threshold; If so, the test photovoltaic tube corresponding to the test sample is marked as a Class II photovoltaic tube; if not, the test photovoltaic tube corresponding to the test sample is marked as an unqualified photovoltaic tube.
6. A high temperature resistance testing method for a photovoltaic tube according to claim 5, characterized in that: The thermal evaluation test of the heated test photovoltaic tube includes: Taking out a test sample from the test photovoltaic tube, taking out a standard sample from the standard photovoltaic tube, performing a withstand voltage breakdown test on the test sample and the standard sample respectively, and obtaining a test breakdown voltage value and a standard breakdown voltage value; comparing the test breakdown voltage value with the standard breakdown voltage value, and obtaining an insulation degradation ratio of the test sample compared to the standard sample; A test sample is taken out from the test photovoltaic tube, and a standard sample is taken out from the standard photovoltaic tube. Mechanical properties tests are performed on the test sample and the standard sample respectively to obtain test mechanical property values and standard mechanical property values; the test mechanical property values are compared with the standard mechanical property values to obtain the mechanical property degradation ratio of the test sample compared with the standard sample.
7. A method for testing the high temperature resistance of a photovoltaic tube according to claim 6, characterized in that: Determine whether the insulation degradation ratio of the test sample is lower than a preset insulation degradation threshold, and whether the mechanical property degradation ratio of the test sample is lower than a preset mechanical property degradation threshold; If so, the test photovoltaic tube corresponding to the test sample is marked as a Class I photovoltaic tube; if not, the test photovoltaic tube corresponding to the test sample is marked as a Class II photovoltaic tube.
8. A photovoltaic tube testing device, characterized in that: It includes a standard area and a test area, wherein the standard area is used to place a standard photovoltaic tube, and the test area is used to place a test photovoltaic tube, and ultraviolet irradiation devices and heating devices are arranged outside the standard area and the test area; The photovoltaic tube testing device adopts the high temperature resistance testing method as described in any one of claims 1 to 7.
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