Wafer bonding device, wafer bonding method and storage medium
By setting up a vibration damping module and a baffle driving mechanism in the wafer bonding equipment and closing the chip transfer port, the problem of low stability and bonding accuracy at the nano-level is solved, and higher bonding accuracy and quality are achieved.
Patent Information
- Application Number
- CN202311785574.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-22
- Publication Date
- 2025-06-24
- Estimated Expiration
- 2043-12-22
AI Technical Summary
The stability and bonding accuracy of existing wafer bonding equipment at the nano level are not high, which affects the alignment accuracy of the upper and lower wafers during the bonding process and the quality after bonding.
By setting up a vibration damping module and a baffle drive mechanism, the chip port is closed to reduce the influence of airflow disturbance and mechanical vibration, thereby ensuring the micro-nano-level stability and bonding accuracy of the machine.
It improves the accuracy and quality of wafer bonding, enhances the stability of the machine, and reduces the impact of airflow disturbance on the bonding process.
Smart Images

Figure CN120199699A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor device processing, and particularly to a wafer bonding device, a wafer bonding method, and a computer-readable storage medium. Background Art
[0002] Chip stacking technology is an important development trend in the future semiconductor field. Among them, wafer bonding technology is a key process to realize this technology. However, with the increase in the density of connection points and the reduction in the spacing on the wafer bonding surface, the requirements for wafer bonding accuracy are getting higher and higher. The existing wafer bonding devices have low stability and bonding accuracy at the nanometer level, which in turn affects the alignment accuracy of the upper and lower wafers during the bonding process and the bonding accuracy after bonding, thus affecting the bonding quality of the wafers.
[0003] In order to overcome the above-mentioned defects existing in the prior art, there is an urgent need in the art for an improved wafer bonding technology to reduce the influence brought by air flow disturbance, so as to ensure the stability and bonding accuracy of the machine at the micro-nano level, thereby improving the bonding quality of the wafers. Summary of the Invention
[0004] The following gives a brief overview of one or more aspects to provide a basic understanding of these aspects. This overview is not an exhaustive survey of all contemplated aspects, and is neither intended to identify key or decisive elements of all aspects nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description to follow.
[0005] In order to overcome the above-mentioned defects existing in the prior art, the present invention provides a wafer bonding device, a wafer bonding method, and a computer-readable storage medium. By setting a vibration damping module, it is used to reduce the influence brought by air flow disturbance, so as to ensure the stability and bonding accuracy of the machine at the micro-nano level, thereby improving the bonding quality of the wafers.
[0006] Specifically, the above-mentioned wafer bonding device provided according to the first aspect of the present invention includes a pre-module and a bonding module. The pre-module is used for preprocessing a first sample and / or a second sample to be bonded. The bonding module is connected to the output end of the pre-module via a wafer transfer port to perform wafer bonding on the first sample and the second sample output therefrom. The wafer transfer port is provided with a baffle. The baffle opens the wafer transfer port when obtaining the first sample and the second sample from the pre-module, and closes the wafer transfer port when bonding the first sample and the second sample.
[0007] Further, in some embodiments of the present invention, the bonding module includes the baffle and the baffle driving mechanism. The baffle driving mechanism includes a slide rail and a cylinder. The slide rail is disposed on one side of the film transfer port and extends along the edge of the one side of the film transfer port. The cylinder is disposed on the other side of the film transfer port. The first side of the baffle is connected to the slide rail, and its second side is connected to the moving end of the cylinder and moves along the slide rail under the drive of the moving end to open or close the film transfer port.
[0008] Further, in some embodiments of the present invention, the bonding module includes a filtering unit. The filtering unit is connected to an independent working gas source to supply clean working gas to the bonding module when bonding the first sample and the second sample.
[0009] Further, in some embodiments of the present invention, the bonding module includes a machine body, a vibration damping module, and a machine base for bonding the first sample and the second sample. The machine body is mounted on the machine base via the vibration damping module to reduce the influence of ground vibration and / or the movement of the auxiliary unit mounted on the machine base on the machine body.
[0010] Further, in some embodiments of the present invention, the bonding module further includes a pneumatic control cabinet and / or an electric control cabinet. At least one hook is provided on the edge of the machine body. The pneumatic control cabinet and / or the electric control cabinet is disposed on the side of the machine body via the at least one hook and is separated from the machine body.
[0011] Further, in some embodiments of the present invention, the bonding module includes a first camera, a second camera, a first moving platform, a second moving platform, and a controller. The first camera is configured to capture a first image of the first sample. The second camera is configured to capture a second image of the second sample. The first moving platform is disposed between the first camera and the second camera and is configured to carry the first sample and drive the first sample to move between a preset bonding position and a wafer transfer position. The second moving platform is disposed between the first camera and the second camera and is configured to carry the second sample and drive the second sample to move between the bonding position and the wafer transfer position. The controller is configured to: move the first moving platform carrying the first sample to the bonding position and move the second moving platform to the wafer transfer position for the first camera to obtain the first image; move the first moving platform to the wafer transfer position and move the second moving platform carrying the second sample to the bonding position for the second camera to obtain the second image; determine the position deviation between the first sample and the second sample according to the first image and the second image; and adjust the positions of the first moving platform and / or the second moving platform according to the position deviation to align the first sample and the second sample.
[0012] Further, in some embodiments of the present invention, the bonding module further includes a coaxial calibration sheet and a C-shaped frame. The coaxial calibration sheet is located between the first camera and the second camera during the camera calibration stage before aligning and bonding the first sample and the second sample. The C-shaped frame includes a first mounting end, a second mounting end, and a camera position adjusting mechanism. The first camera is mounted on the first mounting end. The second camera is mounted on the second mounting end. The camera position adjusting mechanism is connected to the first mounting end and / or the second mounting end and is configured to adjust the positions of the first camera and / or the second camera according to the coaxial calibration sheet images collected by the first camera and the second camera to eliminate the coaxial error between the first camera and the second camera.
[0013] Further, in some embodiments of the present invention, the bonding module further includes a multi-color light source and a light source adjusting component. The multi-color light source is configured to provide illumination beams of multiple wavelengths. The light source adjusting component is configured to adjust the irradiation position and / or wavelength of the illumination beam according to the coating composition of the bonding surface of the first sample and / or the second sample to improve the imaging quality of the first image and / or the second image.
[0014] Further, in some embodiments of the present invention, a first chuck is provided on the upper first moving platform, and a second chuck is provided on the lower second moving platform. The second moving platform further includes a lower fixing plate, an upper fixing plate, a vacuum pump, and a positive pressure gas source. The lower part of the lower fixing plate is fixedly connected to the body of the second moving platform, and its upper surface maintains an inflation gap with the back surface of the second chuck. The upper fixing plate is used to cooperate with the lower fixing plate to fix the edge of the second chuck. The vacuum pump is connected to the second chuck and is used to provide a vacuum negative pressure to the second sample carried by the second chuck through the second chuck to adsorb and fix the second sample. The positive pressure gas source is used to fill the inflation gap with gas so that the second chuck drives the central area of the second sample carried by it to deform upward.
[0015] Further, in some embodiments of the present invention, the second chuck is designed to be arc-shaped so that when the positive pressure gas source fills the inflation gap with gas, it drives the central area of the second sample to deform upward evenly.
[0016] Further, in some embodiments of the present invention, the first moving platform further includes a wafer pressing mechanism. The wafer pressing mechanism is used to provide a uniform downward pressure to the back surface of the first sample carried by the first moving platform to bond the first surface on the lower side of the first sample to the second surface on the upper side of the second sample.
[0017] Further, in some embodiments of the present invention, the first moving platform further includes a longitudinal movement component. The controller is further configured to: after aligning the first sample and the second sample, adjust the distance between the first sample and the second sample to a preset distance via the longitudinal movement component of the first moving platform; via the positive pressure gas source, fill the inflation gap with gas so that the second chuck drives the central area of the second sample carried by it to deform upward; press down the first sample via the wafer pressing mechanism to bond the first surface on the lower side of the first sample downward to the second surface on the upper side of the second sample; and release the vacuum in the first chuck and / or the second chuck via the vacuum pump to complete the bonding of the first sample and the second sample.
[0018] Further, in some embodiments of the present invention, the first moving platform further includes a micro-moving platform. The micro-moving platform is used to adjust the lateral position of the first moving platform and / or the second moving platform according to the lateral position deviation after the first moving platform and the second moving platform both move to the bonding position to align the first sample and the second sample.
[0019] Further, in some embodiments of the present invention, at least one of the first sample and the second sample is a wafer.
[0020] In addition, the above-mentioned wafer bonding method provided according to the second aspect of the present invention includes the following steps: pre-processing the first sample and / or the second sample to be bonded via a pre-module of a wafer bonding device; in response to completion of the pre-processing, controlling a baffle to open a wafer transfer port between a bonding module at the back end and the pre-module to transfer the first sample and the second sample into the bonding module; and controlling the baffle to close the wafer transfer port, and then bonding the first sample and the second sample via the bonding module.
[0021] In addition, the above-mentioned computer-readable storage medium provided according to the third aspect of the present invention stores computer instructions. When the computer instructions are executed by a processor, a wafer bonding method provided according to the third aspect of the present invention is implemented. Description of the Drawings
[0022] After reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings, the above features and advantages of the present invention can be better understood. In the drawings, the components are not necessarily drawn to scale, and components having similar relevant characteristics or features may have the same or similar reference numerals.
[0023] Figure 1 A schematic structural diagram of a wafer bonding device provided according to some embodiments of the present invention is shown.
[0024] Figure 2 A schematic structural diagram of a baffle driving device provided according to some embodiments of the present invention is shown.
[0025] Figure 3 A schematic structural diagram of a bonding module provided according to some embodiments of the present invention is shown.
[0026] Figure 4 A schematic cross-sectional diagram of a bonding module provided according to some embodiments of the present invention is shown.
[0027] Figure 5 A schematic structural diagram of a C-shaped frame provided according to some embodiments of the present invention is shown.
[0028] Figure 6 A schematic structural diagram of a light source adjustment component provided according to some embodiments of the present invention is shown.
[0029] Figure 7 A schematic structural diagram of a second chuck provided according to some embodiments of the present invention is shown.
[0030] Figure 8 A schematic flow diagram of a wafer bonding method provided according to some embodiments of the present invention is shown.
[0031] Figure 9 Shows a schematic diagram of a wafer bonding process provided according to some embodiments of the present invention.
[0032] Reference numerals:
[0033] 11 Front-end module
[0034] 12 Bonding module
[0035] 121 Baffle
[0036] 1221 Slide rail
[0037] 1222 Cylinder
[0038] 13 Wafer transfer port
[0039] 31 Machine body
[0040] 32 Vibration damping module
[0041] 33 Machine base
[0042] 34 Pneumatic control cabinet
[0043] 35 Electrical control cabinet
[0044] 36 First moving platform
[0045] 361 First chuck
[0046] 37 Second moving platform
[0047] 371 Second chuck
[0048] 38 Wafer pressing mechanism
[0049] 39 Longitudinal moving component
[0050] 51 First camera
[0051] 52 Second camera
[0052] 53 Coaxial calibration wafer
[0053] 54 C-frame
[0054] 541 First mounting end
[0055] 542 Second mounting end
[0056] 543 Camera position adjustment mechanism
[0057] 55 Light source adjustment component
[0058] 71 Lower fixing plate
[0059] 72 Upper fixing plate Detailed implementation manners
[0060] The following specific embodiments illustrate the implementation manners of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiments, this does not mean that the features of this invention are limited to this implementation manner. On the contrary, the purpose of introducing the invention in conjunction with the implementation manner is to cover other alternatives or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, many specific details will be included in the following description. The present invention can also be implemented without using these details. In addition, in order to avoid confusing or obscuring the key points of the present invention, some specific details will be omitted in the description.
[0061] In the description of the present invention, it should be noted that unless otherwise clearly specified and limited, the terms "mounted", "connected" and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.
[0062] In addition, the "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the orientations shown in this section and the related drawings. This relative term is only for convenience of description, and it does not mean that the device described needs to be manufactured or operated in a specific orientation, so it should not be construed as a limitation to the present invention.
[0063] It can be understood that although terms such as "first", "second", "third", etc. can be used here to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below can be referred to as the second component, region, layer and / or part without departing from some embodiments of the present invention.
[0064] As mentioned above, with the increase in the density of connection points and the reduction of the pitch on the wafer bonding surface, the requirements for wafer bonding accuracy are getting higher and higher. The existing wafer bonding equipment has low stability and bonding accuracy at the nanometer level, which in turn affects the alignment accuracy of the upper and lower wafers during the bonding process and the bonding accuracy after bonding, and affects the bonding quality of the wafers.
[0065] In order to overcome the above-mentioned defects existing in the prior art, the present invention provides an improved wafer bonding device, a wafer bonding method and a computer-readable storage medium. By providing a baffle to close the wafer transfer port, the influence caused by air flow disturbance and mechanical vibration is reduced, so as to ensure the stability and bonding accuracy at the micro-nano level of the machine platform, thereby improving the bonding quality of the wafer.
[0066] In some non-limiting embodiments, the above-mentioned wafer bonding method provided by the second aspect of the present invention can be implemented based on the above-mentioned wafer bonding device provided by the first aspect of the present invention. Specifically, the wafer bonding device may be configured with a memory and a controller. The memory includes, but is not limited to, the above-mentioned computer-readable storage medium provided by the third aspect of the present invention, on which computer instructions are stored. The controller is connected to the memory and is configured to execute the computer instructions stored on the memory to implement the above-mentioned wafer bonding method provided by the second aspect of the present invention.
[0067] Specifically, please refer to Figure 1 and Figure 2 , Figure 1 which shows a schematic structural diagram of a wafer bonding device provided according to some embodiments of the present invention, Figure 2 which shows a schematic structural diagram of a baffle driving device provided according to some embodiments of the present invention.
[0068] In Figure 1 and Figure 2 In the embodiments shown, the above-mentioned wafer bonding device provided by the first aspect of the present invention includes a pre-module 11 and a bonding module 12. The pre-module 11 is used for pre-processing the first sample and / or the second sample to be bonded (for example: dust removal and filtration, pre-treatment of the bonding surface, heating, vacuum pumping, etc.). The bonding module 12 is connected to the output end of the pre-module 11 via a wafer transfer port 13 to perform wafer bonding on the first sample and the second sample output therefrom. Here, at least one of the first sample and the second sample is a wafer.
[0069] Furthermore, the above bonding module 12 includes a baffle 121 and a baffle driving mechanism. The baffle 121 is disposed at the wafer transfer port 13 and is used to open the wafer transfer port 13 when obtaining the first sample and the second sample from the pre-stage module 11, and to close the wafer transfer port 13 when bonding the first sample and the second sample. The baffle driving mechanism includes a slide rail 1221 and a cylinder 1222. The slide rail 1221 is disposed on one side of the wafer transfer port 13 and extends along the edge of one side of the wafer transfer port 13. The cylinder 1222 is disposed on the other side of the wafer transfer port 13. The first side of the baffle 121 is connected to the slide rail 1221, and its second side is connected to the moving end of the cylinder 1222 and moves along the slide rail 1221 under the drive of the moving end to open or close the wafer transfer port 13. Thus, the baffle 121 can separate the bonding module 12 from the pre-stage module 11, ensuring the independence of the bonding module 12 to prevent the influence of air flow disturbance on the bonding accuracy.
[0070] In addition, the above bonding module 12 further includes a filtering unit. The filtering unit is connected to an independent working gas source and is used to filter and control the particulate matter in the air flow, so as to provide clean working gas to the bonding module 12 when bonding the first sample and the second sample.
[0071] Please refer to Figures 3 to 7 , Figure 3 which shows a schematic diagram of the overall structure of the bonding module provided by some embodiments of the present invention, Figure 4 which shows a schematic cross-sectional view of the overall structure of the bonding module provided by some embodiments of the present invention, Figure 5 which shows a schematic diagram of the structure of the C-shaped frame provided by some embodiments of the present invention, Figure 6 which shows a schematic diagram of the structure of the light source adjustment assembly provided by some embodiments of the present invention, Figure 7 which shows a schematic diagram of the structure of the second moving platform provided by some embodiments of the present invention.
[0072] As Figure 3 and Figure 4 shown, the above bonding module 12 includes a machine body 31, a vibration damping module 32 and a machine base 33 for bonding the first sample and the second sample. Herein, the machine body 31 is installed on the machine base 33 via the vibration damping module 32 to reduce the influence of ground vibration and / or the movement of the auxiliary units installed on the machine base 33 on the machine body 31.
[0073] In addition, the bonding module 12 further includes a pneumatic control cabinet 34 and / or an electric control cabinet 35. Herein, at least one hook is provided on the edge of the machine body 31, and the pneumatic control cabinet 34 and / or the electric control cabinet 35 is disposed on the side of the machine body 31 via at least one hook and is separated from the machine body 31 to reduce the influence of the vibration generated by the pneumatic control and electric control components during operation on the machine body 31.
[0074] Further, as Figures 3 to 5 shown, the bonding module 12 includes a first camera 51, a second camera 52, a first moving platform 36 and a second moving platform 37. The first camera 51 is used to capture a first image of a first sample. The second camera is used to capture a second image of a second sample. The first moving platform 36 is disposed between the first camera 51 and the second camera 52, and is used to carry the first sample and drive the first sample to move between a preset bonding position 56 and a wafer transfer position 57. The second moving platform 37 is disposed between the first camera 51 and the second camera 52, and is used to carry the second sample and drive the second sample to move between the bonding position 56 and the wafer transfer position 57. Here, a first chuck 361 is provided on the first moving platform 36 located above, and a second chuck 371 is provided on the second moving platform 37 located below.
[0075] In addition, the bonding module 12 further includes a coaxial calibration sheet 53 and a C-shaped frame 54. The coaxial calibration sheet 53 is located between the first camera 51 and the second camera 52 during the camera calibration stage before aligning and bonding the first sample and the second sample. The C-shaped frame 54 includes a first mounting end 541, a second mounting end 542 and a camera position adjusting mechanism 543. Here, the first camera 51 is mounted on the first mounting end 541, the second camera 52 is mounted on the second mounting end 542, and the camera position adjusting mechanism 543 is connected to the first mounting end 541 and / or the second mounting end 542, and is used to adjust the positions of the first camera 51 and / or the second camera 52 according to the images of the coaxial calibration sheet 53 collected by the first camera 51 and the second camera 52, so as to eliminate the coaxial error between the first camera 51 and the second camera 52. In addition, in some embodiments, the camera position adjusting mechanism 543 can also adjust the first camera 51 and / or the second camera 52 in the X direction, the Y direction, the Rx (rotation around the X axis) direction, and the Ry (rotation around the Y axis) directions to eliminate the coaxial error between the first camera 51 and the second camera 52.
[0076] In addition, as Figure 6 shown, the bonding module 12 further includes an optional multi-color light source and a light source adjusting component 55. The multi-color light source is used to provide illumination beams of multiple wavelengths. The light source adjusting component 55 is used to adjust the irradiation position and / or wavelength of the illumination beam according to the coating composition of the bonding surface of the first sample and / or the second sample, so as to improve the imaging quality of the first image and / or the second image.
[0077] Further, as Figure 7As shown in the figure, the second chuck 371 includes a lower fixing plate 71, an upper fixing plate 72, a vacuum pump and a positive pressure air source. The lower part of the lower fixing plate 71 is fixedly connected to the body of the second moving platform 37, and its upper surface maintains an inflation gap with the back surface of the second chuck 371. The upper fixing plate 72 is used to cooperate with the lower fixing plate 71 to fix the edge of the second chuck 371. The vacuum pump is connected to the second chuck 371 and is used to provide a vacuum negative pressure to the second sample carried by the second chuck 371 to adsorb and fix the second sample. The positive pressure air source is used to fill the inflation gap with gas so that the second chuck 371 drives the central area of the second sample carried by it to deform upward. Here, the second chuck 371 is designed to be arc-shaped to facilitate the central area of the second sample to deform upward uniformly when the positive pressure air source fills the inflation gap with gas.
[0078] Further, the first moving platform 36 further includes a wafer pressing mechanism 38, which is used to provide a uniform downward pressure to the back surface of the first sample carried by the first moving platform 36 to bond the first surface on the lower side of the first sample to the second surface on the upper side of the second sample. Thus, during the bonding process, the central area of the first sample deforms downward uniformly, and the central area of the second sample deforms upward uniformly. The first surface on the lower side of the first sample and the second surface on the upper side of the second sample start to bond in the form of point contact, and the generated bonding wave propagates uniformly and reaches the edges of the first sample and the second sample simultaneously, so that the bonding effect is enhanced to improve the bonding quality.
[0079] In addition, the first moving platform further includes a longitudinal moving component 39 and a fine movement platform. The fine movement platform is used to adjust the lateral positions of the first moving platform 36 and / or the second moving platform 37 according to the lateral position deviation after the first moving platform 36 and the second moving platform 37 both move to the bonding position 56 to align the first sample and the second sample. The longitudinal moving component 39 is used to adjust the first moving platform 36 and / or the second moving platform 37 along the Z direction, the Rx (rotation around the X axis) direction, and the Ry (rotation around the Y axis).
[0080] The working principle of the above wafer bonding equipment will be described below in conjunction with some embodiments of wafer bonding methods. Those skilled in the art can understand that these embodiments of the bonding methods are only some non-restrictive implementation manners provided by the present invention, aiming to clearly show the main concept of the present invention and provide some specific solutions convenient for the public to implement, rather than limiting all functions or all working modes of the wafer bonding equipment. Similarly, the wafer bonding equipment is also a non-restrictive implementation manner provided by the present invention and does not limit the execution subject and execution order of each step in these wafer bonding methods.
[0081] Specifically, please refer to Figure 8 , Figure 8The flowchart shows a wafer bonding method provided according to some embodiments of the present invention.
[0082] As Figure 8 shown, during the wafer bonding process, the controller of the wafer bonding equipment can first perform pre - processing on the first sample and / or the second sample to be bonded via the pre - module 11. After that, in response to the completion of the pre - processing, the controller can control the baffle 121 to open the wafer transfer port between the bonding module 12 at the back end and the pre - module 11, so as to transfer the first sample and the second sample into the bonding module 12. Then, the controller can control the baffle 121 to close the transfer port 13, and then bond the first sample and the second sample via the bonding module 12 to avoid the influence of gas disturbance and mechanical vibration on the bonding process.
[0083] Please continue to refer to Figure 3 , when aligning the first sample and the second sample, the controller can first move the first moving platform 36 carrying the first sample to the bonding position, and move the second moving platform 37 to the wafer transfer position for the first camera 51 to obtain the first image. After that, the controller can move the first moving platform 36 to the wafer transfer position and move the second moving platform 37 carrying the second sample to the bonding position for the second camera 52 to obtain the second image. Then, the controller can determine the position deviation between the first sample and the second sample (including but not limited to the position deviation in the X - direction, Y - direction, Rx (rotation around the X - axis) direction, and Ry (rotation around the Y - axis) direction) according to the first image and the second image. Finally, the controller can adjust the positions of the first moving platform 36 and / or the second moving platform 37 according to the position deviation to align the first sample and the second sample.
[0084] Please further refer to Figure 9 , Figure 9 The schematic diagram shows a wafer bonding process provided according to some embodiments of the present invention.
[0085] As Figure 9 shown, after aligning the first sample and the second sample, the wafer bonding equipment can bond the first sample and the second sample. Specifically, the controller can first adjust the distance between the first sample and the second sample to a preset distance via the longitudinal moving component 39 of the first moving platform 36, and then fill the inflation gap with gas via the positive - pressure gas source to make the central area of the second sample carried by the second chuck 371 deform uniformly upward. After that, the controller can press down the first sample via the wafer pressing mechanism 38 to make the central area of the first sample deform uniformly downward, and then bond the first surface on the lower side of the first sample to the second surface on the upper side of the second sample. Finally, release the vacuum via the vacuum pump on the first chuck 361 and / or the second chuck 371 to complete the bonding of the first sample and the second sample.
[0086] In summary, for the above-mentioned wafer bonding equipment, wafer bonding method, and computer-readable storage medium provided by the present invention, the wafer transfer port can be closed by setting a baffle to reduce the influence caused by air flow disturbance and mechanical vibration, so as to ensure the stability and bonding accuracy at the micro-nano level of the machine tool, thereby improving the bonding quality of the wafer.
[0087] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions not illustrated and described herein but understood by those skilled in the art.
[0088] The previous description of the present disclosure is provided to enable any person skilled in the art to make or use the present disclosure. Various modifications to the present disclosure will be apparent to those skilled in the art, and the general principles defined herein can be applied to other variations without departing from the spirit or scope of the present disclosure. Thus, the present disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. A wafer bonding device, characterized in that, Comprising: A pre-module for preprocessing a first sample and / or a second sample to be bonded; And A bonding module connected to the output end of the pre-module via a wafer transfer port to perform wafer bonding on the first sample and the second sample output therefrom. Wherein, a baffle is provided at the wafer transfer port, and the baffle opens the wafer transfer port when acquiring the first sample and the second sample from the pre-module, and closes the wafer transfer port when bonding the first sample and the second sample.
2. The wafer bonding device according to claim 1, wherein The bonding module includes the baffle and a baffle driving mechanism, wherein the baffle driving mechanism includes: A slide rail provided on one side of the wafer transfer port and extending along the edge of the one side of the wafer transfer port; and A cylinder provided on the other side of the wafer transfer port. Wherein, a first side of the baffle is connected to the slide rail, and a second side thereof is connected to the moving end of the cylinder, and moves along the slide rail under the drive of the moving end to open or close the wafer transfer port.
3. The wafer bonding apparatus according to claim 1, wherein The bonding module includes: A filtering unit, wherein the filtering unit is connected to an independent working gas source to provide clean working gas to the bonding module when bonding the first sample and the second sample.
4. The wafer bonding device according to claim 1, characterized in that, The bonding module includes a machine body, a vibration damping module and a machine base for bonding the first sample and the second sample. Wherein, the machine body is installed on the machine base via the vibration damping module to reduce the influence of ground vibration and / or the movement of an attached unit installed on the machine base on the machine body.
5. The wafer bonding equipment according to claim 4, characterized in that, The bonding module further includes a pneumatic control cabinet and / or an electric control cabinet. Wherein, at least one hook is provided at the edge of the machine body, and the pneumatic control cabinet and / or the electric control cabinet are arranged on the side of the machine body via the at least one hook and are separated from the machine body.
6. The wafer bonding device according to claim 1, wherein, The bonding module includes: A first camera for taking a first image of the first sample; A second camera for taking a second image of the second sample; A first moving platform arranged between the first camera and the second camera for carrying the first sample and driving the first sample to move between a preset bonding position and a wafer transfer position; A second moving platform arranged between the first camera and the second camera for carrying the second sample and driving the second sample to move between the bonding position and the wafer transfer position; and A controller configured to: move the first moving platform carrying the first sample to the bonding position and move the second moving platform to the wafer transfer position for the first camera to acquire the first image; move the first moving platform to the wafer transfer position and move the second moving platform carrying the second sample to the bonding position for the second camera to acquire the second image; determine the position deviation between the first sample and the second sample according to the first image and the second image; and adjust the positions of the first moving platform and / or the second moving platform according to the position deviation to align the first sample and the second sample.
7. The wafer bonding device according to claim 6, characterized in that, The bonding module further includes: The coaxial calibration piece is located between the first camera and the second camera during the camera calibration stage before aligning and bonding the first sample and the second sample; and The C-frame includes a first mounting end, a second mounting end, and a camera position adjustment mechanism. Among them, the first camera is mounted on the first mounting end, the second camera is mounted on the second mounting end, and the camera position adjustment mechanism is connected to the first mounting end and / or the second mounting end, and is used to adjust the positions of the first camera and / or the second camera according to the coaxial calibration piece images collected by the first camera and the second camera, so as to eliminate the coaxial error between the first camera and the second camera.
8. The wafer bonding apparatus according to claim 7, wherein The bonding module further includes: A multi-color light source for providing illumination beams of multiple wavelengths; and A light source adjustment component for adjusting the irradiation position and / or wavelength of the illumination beam according to the coating composition of the bonding surface of the first sample and / or the second sample, so as to improve the imaging quality of the first image and / or the second image.
9. The wafer bonding apparatus according to claim 6, wherein, A first chuck is provided on the first moving platform located above, and a second chuck is provided on the second moving platform located below. Among them, the second moving platform further includes: A lower fixing plate, the lower part of which is fixedly connected to the body of the second moving platform, and the upper surface of which maintains an inflated gap with the back surface of the second chuck; An upper fixing plate for cooperating with the lower fixing plate to fix the edge of the second chuck; A vacuum pump is connected to the second chuck and is used to provide a vacuum negative pressure to the second sample carried by it through the second chuck to adsorb and fix the second sample; and A positive pressure air source for filling the inflated gap with gas so that the second chuck drives the central area of the second sample carried by it to deform upward.
10. The wafer bonding apparatus according to claim 9, wherein The second chuck is designed to be arc-shaped so that when the positive pressure air source fills the inflated gap with gas, it drives the central area of the second sample to deform upward evenly.
11. The wafer bonding device according to claim 9, characterized in that, The first moving platform further includes: A wafer pressing mechanism for providing a uniform downward pressure to the back surface of the first sample carried by the first moving platform, so as to bond the first surface on the lower side of the first sample to the second surface on the upper side of the second sample.
12. The wafer bonding apparatus according to claim 11, wherein The first moving platform further includes a longitudinal movement component, and the controller is further configured to: After aligning the first sample and the second sample, adjust the distance between the first sample and the second sample to a preset distance through the longitudinal movement component of the first moving platform; Through the positive pressure air source, fill the inflated gap with gas so that the second chuck drives the central area of the second sample carried by it to deform upward; Press down the first sample through the wafer pressing mechanism to bond the first surface on the lower side of the first sample downward to the second surface on the upper side of the second sample; And Release the vacuum on the first chuck and / or the second chuck through the vacuum pump to complete the bonding of the first sample and the second sample.
13. The wafer bonding apparatus according to claim 9, wherein The first moving platform further includes: The fine motion platform is used to adjust the lateral positions of the first moving platform and / or the second moving platform according to the lateral position deviation after both the first moving platform and the second moving platform move to the bonding position, so as to align the first sample and the second sample.
14. The wafer bonding device according to claim 1, wherein, At least one of the first sample and the second sample is a wafer.
15. A wafer bonding method, characterized in that, It includes the following steps: Perform pre-processing on the first sample and / or the second sample to be bonded via the pre-module of the wafer bonding equipment; In response to the completion of the pre-processing, control the shutter to open the wafer transfer port between the bonding module at the rear end and the pre-module, so as to transfer the first sample and the second sample into the bonding module; And Control the shutter to close the wafer transfer port, and then bond the first sample and the second sample via the bonding module.
16. A computer-readable storage medium having computer instructions stored thereon, characterized in that, When the computer instructions are executed by a processor, the wafer bonding method as described in claim 15 is implemented.
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