Transmission device and semiconductor process equipment

Abstract

The invention discloses a transmission device and semiconductor process equipment, the disclosed transmission device is applied to the semiconductor process equipment for bearing and transmitting wafers, the disclosed transmission device comprises a bearing part and a restraining part, the restraining part is located above the bearing part, and the restraining part and the bearing surface of the bearing part are opposite and arranged at an interval; the restraining part is provided with a gas spraying opening, and the gas spraying opening is used for spraying restraining gas to the bearing surface, so that when the bearing surface bears the wafer, the restraining gas applies acting force used for restraining the wafer on the bearing surface to the wafer. According to the scheme, the problem that in the prior art, a transmission device is prone to slipping off in the wafer transmission process can be solved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and particularly to a transfer device and a semiconductor processing apparatus. Background Art

[0002] When a semiconductor processing apparatus processes a wafer, due to different process purposes, the wafer needs to be transferred to different process chambers for processing. During the transfer process of the wafer, a transfer device is required for transfer. For example, in the etching process of a wafer by a plasma etching apparatus, the wafer is transferred between a vacuum conversion chamber and a reaction chamber through a transfer device. In related technologies, when the transfer device transfers the wafer, the wafer is directly placed on the bearing surface of the transfer device. Since the transfer device moves at a relatively high speed during the movement, the wafer is prone to slipping during the transfer process by the transfer device. Summary of the Invention

[0003] The present invention discloses a transfer device and a semiconductor processing apparatus to solve the problem that the wafer is prone to slipping during the transfer process by the transfer device in related technologies.

[0004] To solve the above technical problems, the present invention is implemented as follows:

[0005] In a first aspect, the present application discloses a transfer device. The disclosed transfer device is applied to a semiconductor processing apparatus to carry and transfer a wafer. The disclosed transfer device includes a bearing part and a constraint part, wherein:

[0006] The constraint part is located above the bearing part, and is opposite to and spaced from the bearing surface of the bearing part;

[0007] The constraint part has a gas jet port for jetting a constraint gas onto the bearing surface, so that when the bearing surface bears the wafer, the constraint gas exerts a force on the wafer to constrain the wafer on the bearing surface.

[0008] In a second aspect, the present application also discloses a semiconductor processing apparatus. The disclosed semiconductor processing apparatus includes a reaction chamber, a transfer chamber, and a vacuum conversion chamber. The transfer chamber includes the transfer device described in the first aspect. The wafer transfer device is used to carry and transfer the wafer between the reaction chamber and the vacuum conversion chamber.

[0009] The technical solution adopted by the present invention can achieve the following technical effects:

[0010] In the transmission device disclosed in the embodiments of the present application, by providing a constraint part and opening a gas jet port in the constraint part, the gas jet port of the constraint part can jet constraint gas towards the bearing surface, so that when the bearing part bears a wafer, the constraint gas jetted from the gas jet port can reach the side of the wafer facing away from the bearing surface, so that the constraint gas exerts a force on the wafer to constrain the wafer on the bearing surface, so that during the process of the transmission device moving while bearing the wafer, since the constraint gas can exert a force on the wafer to constrain the wafer on the bearing surface, the wafer can be pressed tightly on the bearing surface, thereby alleviating the risk of the wafer slipping. Moreover, since the force exerted by the constraint gas on the wafer to constrain the wafer on the bearing surface does not have mechanical contact with the wafer (such as directly clamping the wafer), damage to the wafer can be avoided, and the constraint gas can also purge the surface of the wafer to clean the wafer. Description of the Drawings

[0011] Figure 1 is an exploded schematic view of the transmission device disclosed in the embodiments of the present invention;

[0012] Figure 2 is an overall schematic view of the transmission device disclosed in the embodiments of the present invention;

[0013] Figure 3 is a cross-sectional view of the transmission device disclosed in the embodiments of the present invention, where a in the figure represents a wafer;

[0014] Figure 4 is a cross-sectional view of the transmission device disclosed in the embodiments of the present invention. In the figure, the b area represents the area where the gas jet ports with the gas outlet direction inclined away from the opening end are distributed, the c area in the figure represents the area where the gas jet ports with the gas outlet direction perpendicular to the bearing surface are distributed, and the dashed arrows in the figure represent the flow direction of the constraint gas;

[0015] Figure 5 is a connection schematic view of the pneumatic diaphragm valve and the constraint part disclosed in the embodiments of the present invention;

[0016] Figure 6 is a schematic view of the cooperation between the transmission device and the ejector pin disclosed in the embodiments of the present invention;

[0017] Figure 7 is an axonometric schematic view of the cooperation between the transmission device and the ejector pin disclosed in the embodiments of the present invention;

[0018] Figure 8 is a cooperation schematic view of the bearing part and the ejector pin disclosed in the embodiments of the present invention;

[0019] Figure 9 is a structural schematic view of the bearing part disclosed in the embodiments of the present invention;

[0020] Figure 10Overall schematic diagram of the transmission device disclosed in the embodiments of the present invention;

[0021] Figure 11 Schematic diagram of the distribution of the air jet nozzles of the wafer restraint part disclosed in the embodiments of the present invention;

[0022] Figure 12 Schematic diagram of the force on the wafer when it is sprayed with gas by an air jet nozzle whose air outlet direction is inclined along the direction away from the opening end;

[0023] Figure 13 Schematic diagram of the structure of the semiconductor process equipment disclosed in the embodiments of the present invention, where the reference numeral 10 in the figure represents the transmission device.

[0024] Explanation of reference numerals:

[0025] 10 - Transmission device,

[0026] 100 - Carrying part, 101 - Carrying surface, 102 - First avoidance space, 103 - Second avoidance space, 104 - Third avoidance space, 110 - Arc-shaped edge, 120 - Main body part, 130 - Extension part, 140 - Second connecting ear part,

[0027] 200 - Restraint part, 201 - Air jet nozzle, 210 - Restraint part body, 220 - Fixing part, 221 - Bending part, 230 - First connecting ear part,

[0028] 300 - Inlet pipeline,

[0029] 400 - Pneumatic diaphragm valve,

[0030] 600 - Reaction chamber, 610 - Thimble, 620 - Electrostatic chuck, 630 - Driving mechanism,

[0031] 700 - Transfer chamber,

[0032] 800 - Vacuum conversion chamber,

[0033] 900 - Semiconductor front-end module, 910 - Manipulator,

[0034] a - Wafer. Detailed implementation manners

[0035] To make the objectives, technical solutions, and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below in conjunction with the specific embodiments of the present invention and the corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts belong to the scope of protection of the present invention.

[0036] The technical solutions disclosed in various embodiments of the present invention are described in detail below in conjunction with the accompanying drawings.

[0037] Please refer to Figures 1 to 13 The embodiment of the present invention discloses a transmission device, which is applied to carry and transmit wafers in semiconductor process equipment. The disclosed transmission device includes a carrying part 100 and a restraining part 200.

[0038] Please refer to Figure 1 and Figure 2 The restraining portion 200 is located above the carrying portion 100 , and is opposite to the carrying surface 101 of the carrying portion 100 , and is spaced apart from each other.

[0039] The constraining portion 200 has a gas jet 201 , and the gas jet 201 is used to spray a constraining gas toward the carrying surface 101 , so that the constraining gas exerts a force on the wafer for constraining the wafer on the carrying surface 101 .

[0040] The transmission device disclosed in the embodiment of the present application is provided with a constraint portion 200, and a jet nozzle 201 is provided in the constraint portion 200, so that the jet nozzle 201 of the constraint portion 200 can spray a constraint gas to the bearing surface 101, so that when the bearing surface 101 carries a wafer, the constraint gas sprayed by the jet nozzle 201 can reach the side of the wafer away from the bearing surface 101, so that the constraint gas exerts a force on the wafer to constrain the wafer to the bearing surface 101, so that in the process of the transmission device carrying the wafer to move, the constraint gas can exert a force on the wafer to constrain the wafer to the bearing surface 101, so that the wafer is pressed on the bearing surface 101, thereby alleviating the risk of the wafer slipping. Moreover, since the force exerted by the constraint gas on the wafer to constrain the wafer to the bearing surface 101 does not have mechanical contact with the wafer (for example, directly clamping the wafer), it is possible to avoid damage to the wafer, and the constraint gas can also purge the surface of the wafer to clean the wafer.

[0041] It should be noted that the constrained gas can be nitrogen. Of course, the constrained gas can also be other gases that will not pollute the wafer and the chamber. The embodiment of the present application does not specifically limit the type of the constrained gas. The bearing part 100 can be a ceramic material, and the constrained part 200 can be a high temperature resistant (temperature greater than 250°C) resin material. Of course, the bearing part 100 and the constrained part 200 can also be other materials. The embodiment of the present application does not specifically limit the materials of the bearing part 100 and the constrained part 200.

[0042] When the wafer is placed on the bearing surface 101, the distance between the wafer and the air jet port 201 can be 2 mm, so that the air jet port 201 can achieve a large air flow pressure effect with a relatively small air source pressure, which can avoid air flow loss and damage to the wafer. It should be noted that the thickness of the wafer is usually 0.775 mm, and the distance between the bearing surface 101 and the air jet port 201 can be 2.775 mm. The distance between the bearing surface 101 and the air jet port 201 is more than three times the thickness of the wafer, so as to prevent the constraint part 200 from hitting the wafer during the movement of the transfer device and avoid damaging the wafer.

[0043] Optionally, to better prevent the wafer from slipping, the bearing part 100 may include an arc-shaped edge 110 extending along the edge of the bearing surface 101. The height of the arc-shaped edge 110 is greater than the height of the bearing surface 101, and the arc-shaped edge 110 may have an open end for the wafer to enter and exit.

[0044] The transfer device disclosed in the embodiment of the present application is provided with an arc-shaped edge 110 extending along the edge of the bearing surface 101, and the height of the arc-shaped edge 110 is greater than the height of the bearing surface 101. The arc-shaped edge 110 has an open end for the wafer to enter and exit, so that the wafer can be placed on the bearing surface 101 along the open end of the arc-shaped edge 110. The arc-shaped edge 110 can limit the wafer, thus preventing the wafer from slipping from the position of the arc-shaped edge 110.

[0045] Optionally, to further prevent the wafer from slipping from the open end of the arc-shaped edge 110, the constraint part 200 may include a plurality of air jet ports 201. At least some of the air jet ports 201 among the plurality of air jet ports 201 have an air outlet direction inclined away from the open end, so that when the wafer is placed on the bearing surface 101, the air jet ports 201 with an air outlet direction inclined away from the open end can jet constraint gas to the wafer in an inclined direction away from the open end. The inclination angle can be 45°, for example. Of course, the inclination angle can also be other angles, which are not limited in the embodiment of the present application. It should be noted that when the air jet ports 201 jet constraint gas to the wafer in an inclined direction away from the open end, the force of the constraint gas received by the wafer is as shown in the attached Figure 12 figure. The force received by the wafer can be decomposed into a force perpendicular to the bearing surface 101 (the vertically downward force shown in the figure) and a force parallel to the bearing surface 101 and away from the open end (the horizontally rightward force shown in the figure).

[0046] In the transmission device disclosed in the embodiments of the present application, at least some of the air outlet directions of the plurality of air jet nozzles 201 are set to be inclined in a direction away from the opening end. When the wafer is carried on the carrying surface 101, the air jet nozzles 201 with the air outlet directions inclined in the direction away from the opening end can jet the constraint gas obliquely to the wafer in the direction away from the opening end. This can not only apply a force perpendicular to the carrying surface 101 to the wafer, but also apply a force parallel to the carrying surface 101 and in the direction away from the opening end, thereby further preventing the wafer from slipping from the opening end of the arc-shaped baffle 110.

[0047] In an alternative embodiment, the constraint portion 200 may include a plurality of air jet nozzles 201. The air outlet directions of some of the plurality of air jet nozzles 201 may be inclined in a direction away from the opening end, for jetting the constraint gas obliquely to the wafer in the direction away from the opening end. The air outlet directions of the other part of the air jet nozzles 201 are perpendicular to the carrying surface 101, for jetting the constraint gas to the wafer in a direction perpendicular to the carrying surface 101, so that the wafer can be better pressed on the carrying surface 101 and can also be better prevented from slipping from the opening end. Specifically, the diameter of the air jet nozzle 201 with the air outlet direction inclined in the direction away from the opening end may be φ6 mm, and the diameter of the air jet nozzle 201 with the air outlet direction perpendicular to the carrying surface 101 may be φ4 mm.

[0048] Optionally, the air jet nozzles 201 with the air outlet directions inclined in the direction away from the opening end are distributed on one side of the constraint portion 200 away from the arc-shaped baffle 110, and the other part of the air jet nozzles 201 are distributed on one side close to the arc-shaped baffle 110.

[0049] Specifically, please refer to Figure 3 、 Figure 4 and Figure 11 , the air jet nozzles 201 with the air outlet directions perpendicular to the carrying surface 101 and the air jet nozzles 201 with the air outlet directions inclined in the direction away from the opening end may be evenly distributed on both sides of the center line of the constraint portion 200. In Figure 4 , the b area represents the area where the air jet nozzles with the air outlet directions inclined in the direction away from the opening end are distributed, and the c area represents the area where the air jet nozzles with the air outlet directions perpendicular to the carrying surface are distributed. The dotted arrows in the figure indicate the flow direction of the constraint gas. More specifically, the area of the distribution region of the air jet nozzles 201 with the air outlet directions perpendicular to the carrying surface 101 is equal to the area of the distribution region of the air jet nozzles 201 with the air outlet directions inclined in the direction away from the opening end, so as to better balance the application of the force perpendicular to the carrying surface 101 and the force parallel to the carrying surface 101 and in the direction away from the opening end to the wafer.

[0050] In another embodiment, the restraining part 200 may include a plurality of jet nozzles 201. The air outlet directions of the plurality of jet nozzles 201 are all perpendicular to the bearing surface 101, so as to spray restraining gas onto the wafer in a direction perpendicular to the bearing surface 101, so that the wafer can be better pressed against the bearing surface 101.

[0051] Optionally, the restraining part 200 and the bearing surface 101 may enclose an accommodation space. The restraining part 200 may have an inner cavity and an air inlet communicating with the inner cavity. The surface of the restraining part 200 opposite to the bearing surface 101 is provided with jet nozzles 201 communicating with the inner cavity.

[0052] The transfer device disclosed in the embodiment of the present application encloses an accommodation space through the restraining part 200 and the bearing surface 101, so that when the bearing surface bears a wafer, the accommodation space can protect the wafer.

[0053] Specifically, please refer to Figure 1 , the restraining part 200 may include a restraining part body 210 and a fixing part 220. The restraining part body 210 may have an inner cavity and an air inlet communicating with the inner cavity. The surface of the restraining part body 210 opposite to the bearing surface 101 is provided with jet nozzles 201 communicating with the inner cavity. The first end of the fixing part 220 may be connected to the restraining part body 210, and the second end of the fixing part 220 may be connected to the bearing part 100. For example, the second end of the fixing part 220 may be fixedly connected to the bearing part 100 by welding, or may be detachably connected to the bearing part 100 through components such as buckles and bolts. The detachable connection of the second end of the fixing part 220 to the bearing part 100 is beneficial to the cleaning of parts such as the bearing surface 101 and the jet nozzles 201.

[0054] The first end and the second end of the fixing part 220 may be connected by a bending part 221, so that the second end of the fixing part 220 is bent toward the side where the jet nozzles 201 are located relative to the first end of the fixing part 220, so as to facilitate the formation of an accommodation space between the restraining part 200 and the bearing surface 101 when the second end of the fixing part 220 is connected to the bearing part 100.

[0055] The restraining part 200 may further include a first connecting ear part 230. The first connecting ear part 230 may be connected to the restraining part body 210. The first connecting ear part 230 may be spaced apart from the fixing part 220. The bearing part 100 may include a second connecting ear part 140. The restraining part 200 may be connected to the bearing part 100 through the first connecting ear part 230 and the second connecting ear part 140, so as to improve the connection stability between the restraining part 200 and the bearing part 100. Specifically, the first connecting ear part 230 and the second connecting ear part 140 may be detachably connected through components such as buckles and bolts.

[0056] In another embodiment, the restraining part 200 may be composed of a nozzle and a connecting air pipe. When there are multiple nozzles, the multiple nozzles may be dispersedly arranged and separately connected to the air pipe.

[0057] For the convenience of maintaining each part of the transmission device, optionally, the restraining part 200 is detachably connected to the bearing part 100, so as to facilitate the maintenance of each part of the transmission device. Specifically, the restraining part 200 and the bearing part 100 may be connected by resin screws.

[0058] During the process of the wafer being transmitted to the reaction chamber 600 by the transmission device and placed on the wafer, it needs to cooperate with the ejector pins 610 in the reaction chamber 600. Since the ejector pins 610 are usually of a three-pin structure, for the convenience of picking and placing the wafer, optionally, please refer to Figure 9 , the bearing part 100 may include a main body part 120 and an extension part 130. The main body part 120 may be of a semi-circular structure, and the radius of the main body part 120 is greater than or equal to the radius of the wafer. The main body part 120 may be provided with a groove whose center of the notch coincides with the center of the circle of the main body part 120. Extension parts 130 extending away from the main body part 120 may be provided at the notch edges on both sides of the groove. The two extension parts 130 and the inner wall of the groove may jointly enclose a first avoidance space 102. Regions of the two extension parts 130 facing away from the first avoidance space 102 may respectively form a second avoidance space 103 and a third avoidance space 104. The first avoidance space 102, the second avoidance space 103, and the third avoidance space 104 may be respectively used for the corresponding ejector pins 610 to pass through, so that the ejector pins 610 support the wafer.

[0059] The transmission device disclosed in the embodiment of the present application is configured by setting the bearing part 100 to include the main body part 120 and the extension part 130, and the main body part 120 is set to be of a semi-circular structure, and the radius of the main body part 120 is greater than or equal to the radius of the wafer, so that when the wafer is carried on the bearing surface 101 of the bearing part 100, the main body part 120 has a larger mating contact surface with the wafer. Furthermore, with the cooperation of the extension part 130, the wafer can be better supported. Moreover, the first avoidance space 102, the second avoidance space 103, and the third avoidance space 104 formed by the bearing part 100 can allow the corresponding ejector pins 610 to pass through, so that the ejector pins 610 can support the wafer, thereby facilitating the picking and placing of the wafer in the reaction chamber 600.

[0060] When the transfer device is disposed in the transfer chamber 700, in order to avoid the influence of the constraint gas ejected from the gas ejection port 201 of the crystal constraint portion 200 on the air pressure in the transfer chamber 700, optionally, please refer to 5. The transfer device may further include a gas source device, an intake pipeline 300, and a pneumatic diaphragm valve 400. The constraint portion 200 may have an intake port communicating with the gas ejection port 201. The gas source device may communicate with the intake port through the intake pipeline 300. The pneumatic diaphragm valve 400 may be disposed in the intake pipeline 300. The pneumatic diaphragm valve 400 may adjust the pressure ejected from the gas ejection port 201, so that the pressure ejected from the gas ejection port 201 is consistent with the required pressure environment in the transfer chamber 700 (for example, the pressure is 35 psi), thereby avoiding the influence of the constraint gas ejected from the gas ejection port 201 of the constraint portion 200 on the air pressure in the transfer chamber 700.

[0061] In order to avoid the influence of the gas ejected from the gas ejection port 201 of the constraint portion 200 on the environment in the transfer chamber 700, the type of the constraint gas ejected from the gas ejection port 201 may be the same as the type of the gas in the transfer chamber 700. For example, both may be nitrogen.

[0062] Please refer to Figure 13 , this application also discloses a semiconductor process equipment. The disclosed semiconductor process equipment includes a reaction chamber 600, a transfer chamber 700, and a vacuum conversion chamber 800. The transfer chamber 700 includes the transfer device disclosed in the above embodiments. The transfer device is used to carry and transfer wafers between the reaction chamber 600 and the vacuum conversion chamber 800.

[0063] It should be noted that when transferring wafers to the reaction chamber, the wafers need to be transferred from the semiconductor front-end module 900 to the vacuum conversion chamber 800 through a robot 910. After the wafers are transferred to the vacuum conversion chamber 800, the vacuum conversion chamber 800 is evacuated to a vacuum state. Both the transfer chamber 700 and the reaction chamber are in a vacuum state. Through the transfer device, the wafers in the vacuum conversion chamber 800 can be transferred to the reaction chamber after passing through the transfer chamber 700.

[0064] When transferring the wafers in the reaction chamber to the semiconductor front-end module 900, the wafers in the reaction chamber are transferred to the vacuum conversion chamber 800 through the transfer chamber 700. When the wafers are transferred to the vacuum conversion chamber 800, the pressure in the vacuum conversion chamber 800 is converted to the indoor pressure, so that the wafers can be transferred to the semiconductor front-end module 900 through the robot 910.

[0065] In the semiconductor processing equipment disclosed in the embodiments of the present application, by providing the transfer device disclosed in the above embodiments, during the process of the transfer device carrying the wafer and moving, since the restraining gas can exert a force on the wafer to restrain the wafer on the bearing surface 101, the wafer can be pressed tightly on the bearing surface 101, thereby reducing the risk of the wafer slipping. Moreover, since the force exerted by the restraining gas on the wafer to restrain the wafer on the bearing surface 101 does not have mechanical contact with the wafer (such as directly clamping the wafer), damage to the wafer can be avoided, and the restraining gas can also purge the surface of the wafer to clean the wafer.

[0066] Please refer to Figure 6 and Figure 7 , optionally, the reaction chamber 600 may include a thimble 610, an electrostatic chuck 620, and a driving mechanism 630. The electrostatic chuck 620 may be provided with an avoidance hole, and the driving mechanism 630 may be connected to the thimble 610 for driving the thimble 610 to move up and down along the avoidance hole.

[0067] During the process of the transfer device placing the wafer on the electrostatic chuck 620, the transfer device carrying the wafer can move to a position opposite to the electrostatic chuck 620 of the bearing portion 100. During the process of the transfer device carrying the wafer and moving, the jet orifice 201 jets the restraining gas to the wafer. When the transfer device receives a descending instruction, the jet orifice 201 stops jetting the restraining gas to the wafer. The driving mechanism 630 can drive the thimble 610 to rise so as to extend out of the avoidance hole to cooperate with the wafer for support, so that the wafer is separated from the bearing surface 101. At this time, the transfer device moves to a position away from the wafer, and the driving mechanism 630 can drive the thimble 610 to descend so that the wafer falls on the electrostatic chuck 620.

[0068] After the wafer is etched in the reaction chamber 600, the driving mechanism 630 drives the thimble 610 to rise so as to extend out of the avoidance hole, so that the wafer is separated from the electrostatic chuck 620. After the bearing portion 100 of the transfer device extends into the gap between the wafer and the electrostatic chuck 620, the transfer device rises so that the bearing portion 100 supports the wafer. After the transfer device receives a rising signal, the jet orifice 201 jets the restraining gas to the wafer. At this time, the transfer device can carry the wafer and move out of the reaction chamber 600.

[0069] In the above embodiments of the present invention, the differences between the various embodiments are mainly described. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a more optimal embodiment. For the sake of brevity of the description, it will not be elaborated here.

[0070] The embodiments of the present invention have been described above in conjunction with the accompanying drawings. However, the present invention is not limited to the above specific embodiments. The above specific embodiments are merely illustrative rather than restrictive. Under the inspiration of the present invention, those of ordinary skill in the art can also make many forms without departing from the purpose of the present invention and the scope protected by the claims, and all of them fall within the protection scope of the present invention.

Claims

1. A transfer device is applied to carry and transfer wafers in semiconductor process equipment, characterized in that It includes a carrying part (100) and a constraining part (200), where: The constraining part (200) is located above the carrying part (100), opposite to the carrying surface (101) of the carrying part (100), and is spaced apart. The constraining part (200) has a jet orifice (201), and the jet orifice (201) is used to jet a constraining gas onto the carrying surface (101), so that when the wafer is carried on the carrying surface (101), the constraining gas exerts a force on the wafer to constrain the wafer on the carrying surface (101).

2. The transmission device according to claim 1, wherein The carrying part (100) includes an arc-shaped retaining edge (110) extending along the edge of the carrying surface (101). The height of the arc-shaped retaining edge (110) is greater than the height of the carrying surface (101), and the arc-shaped retaining edge (110) has an open end for the wafer to enter and exit.

3. The transmission device according to claim 2, characterized in that The constraining part (200) includes a plurality of the jet orifices (201), and the outlet directions of at least some of the plurality of jet orifices (201) are inclined in a direction away from the open end.

4. The transmission device according to claim 2, wherein The constraining part (200) includes a plurality of the jet orifices (201). The outlet directions of some of the plurality of jet orifices (201) are inclined in a direction away from the open end, and the outlet directions of the other part of the jet orifices (201) are perpendicular to the carrying surface (101).

5. The transmission device according to claim 3 or 4, characterized in that, The jet orifices (201) with the outlet directions inclined in the direction away from the open end are distributed on one side of the constraining part (200) away from the arc-shaped retaining edge (110), and the other part of the jet orifices (201) are distributed on the side close to the arc-shaped retaining edge (110).

6. The transmission device according to claim 2, wherein The constraining part (200) includes a plurality of the jet orifices (201), and the outlet directions of the plurality of jet orifices (201) are all perpendicular to the carrying surface (101).

7. The transmission device according to claim 1, characterized in that The constraining part (200) and the carrying surface (101) enclose an accommodation space. The constraining part (200) has an inner cavity and an air inlet communicating with the inner cavity. The surface of the constraining part (200) opposite to the carrying surface (101) is provided with the jet orifice (201) communicating with the inner cavity.

8. The transmission device according to claim 7, characterized in that, The constraining part (200) is detachably connected to the carrying part (100).

9. The transmission device according to claim 1, wherein The carrying part (100) includes a main body part (120) and an extension part (130). The main body part (120) is in a semi-circular structure, and the radius of the main body part (120) is greater than or equal to the radius of the wafer. A groove with a notch center coinciding with the center of the circle of the main body part (120) is formed in the main body part (120). The extension parts (130) extending away from the main body part (120) are provided at the notch edges on both sides of the groove. The two extension parts (130) and the inner wall of the groove together enclose a first avoidance space (102). Regions of the two extension parts (130) facing away from the first avoidance space (102) respectively form a second avoidance space (103) and a third avoidance space (104). The first avoidance space (102), the second avoidance space (103), and the third avoidance space (104) are respectively used for corresponding thimbles (610) to pass through, so that the thimbles (610) support the wafer.

10. The transmission device according to claim 1, characterized in that, The transfer device further includes a gas source device, an intake pipeline (300), and a pneumatic diaphragm valve (400). The restraining part (200) has an air inlet communicating with the air jet port (201). The gas source device is communicated with the air inlet through the intake pipeline (300), and the pneumatic diaphragm valve (400) is arranged on the intake pipeline (300).

11. A semiconductor process equipment, characterized in that, It includes a reaction chamber (600), a transfer chamber (700), and a vacuum conversion chamber (800). The transfer chamber (700) includes the transfer device according to any one of claims 1 to 10. The transfer device is used to carry and transfer the wafer between the reaction chamber (600) and the vacuum conversion chamber (800).

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