High-power-density water-cooling heat dissipation double-sided power module system and use method

Abstract

The invention provides a high-power-density water-cooling heat dissipation double-sided power module system and a use method, and the system comprises a water-cooling heat dissipation module, and double-sided power modules are installed in an interlayer of the water-cooling heat dissipation module at equal intervals. The double-sided power module comprises a first half-bridge power module and a second half-bridge power module, the first half-bridge power module and the second half-bridge power module are arranged in parallel, and the outer side end faces of the first half-bridge power module and the second half-bridge power module are attached to the inner wall of the interlayer in the water-cooling heat dissipation module. According to the system, the double-sided power modules are arranged in the water-cooling heat dissipation module at equal intervals, the double-sided power modules achieve double-sided synchronous heat dissipation through the water-cooling heat dissipation module, the natural convection heat dissipation efficiency is improved, temperature unbalance in the double-sided power modules is avoided, and the service life of the double-sided power modules is prolonged.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor packaging, and more specifically, to a water-cooled heat dissipation double-sided power module system with high power density and its usage method. Background Art

[0002] Silicon carbide power devices have shown significant advantages in fields such as new energy vehicles and smart power grids due to their high breakdown voltage, low on-state loss, and high-frequency switching characteristics. However, traditional double-sided heat dissipation silicon carbide power modules use metal pads to achieve upper surface interconnection and heat dissipation. Due to the limited shape of the metal pads, the metal pads cannot cover all the heat-generating areas, resulting in too high local heat flux density in the double-sided heat dissipation silicon carbide power module, unable to effectively dissipate heat, leading to thermal resistance imbalance in the heat dissipation path of the double-sided heat dissipation silicon carbide power module, causing the junction temperature in the double-sided heat dissipation silicon carbide power module to fluctuate. The temperature difference between the two sides in the double-sided heat dissipation silicon carbide power module leads to mismatched thermal expansion coefficients, causing solder layer fatigue or bond wire fracture, making the double-sided heat dissipation silicon carbide power module prone to local aging and shortening its service life. Summary of the Invention

[0003] In order to solve the problems that when using metal pads to achieve upper surface interconnection and heat dissipation, the heat dissipation path is easily blocked and local aging is likely to occur, the present invention provides a water-cooled heat dissipation double-sided power module system with high power density and its usage method.

[0004] To achieve the above object, the present invention provides the following technical solutions: The present invention proposes a water-cooled heat dissipation double-sided power module system with high power density, including a water-cooled heat dissipation module, in which double-sided power modules are installed at equal intervals in the interlayer. The double-sided power module includes a first half-bridge power module and a second half-bridge power module. The first half-bridge power module and the second half-bridge power module are arranged in parallel, and the outer end faces of the first half-bridge power module and the second half-bridge power module are attached to the inner wall of the interlayer in the water-cooled heat dissipation module.

[0005] Preferably, the first half-bridge power module includes a first half-bridge DBC substrate, a first heat dissipation copper layer is arranged on the first half-bridge DBC substrate, drive conductive copper layers are arranged on both sides of the first heat dissipation copper layer near the top end positions, a first half-bridge drive negative terminal and a first half-bridge drive positive terminal are connected to the drive conductive copper layers, and the first half-bridge drive negative terminal and the first half-bridge drive positive terminal are arranged in parallel; On both sides of the first heat-dissipating copper layer near the bottom end thereof, second heat-dissipating copper layers are provided. On the side of the second heat-dissipating copper layer away from the first heat-dissipating copper layer, a power-conducting copper layer is provided. At a position near the top end of the power-conducting copper layer, a first half-bridge parallel-connected silicon carbide power chip is provided, and the first half-bridge parallel-connected silicon carbide power chip is electrically connected to the first half-bridge drive negative terminal and the first half-bridge drive positive terminal respectively; On the first half-bridge parallel-connected silicon carbide power chip, a first type of copper pillar is installed, and the first type of copper pillar is connected to the second half-bridge power module; The bottoms of the first heat-dissipating copper layer and the power-conducting copper layer are connected with power terminals.

[0006] Preferably, the power terminals include a first half-bridge power negative terminal and a first half-bridge power positive terminal; The first half-bridge power negative terminal is installed at a position near the bottom end of the first heat-dissipating copper layer, and the first half-bridge power positive terminal is respectively installed at a position near the bottom end of the power-conducting copper layer.

[0007] Preferably, the second half-bridge power module includes a second half-bridge DBC substrate, and a power copper layer and a drive copper layer are provided on the second half-bridge DBC substrate; At a position near the top end of the drive copper layer, a second half-bridge drive negative terminal and a second half-bridge drive positive terminal are connected; On the power copper layer below the second half-bridge drive negative terminal, a second half-bridge parallel-connected silicon carbide power chip is provided, and the second half-bridge parallel-connected silicon carbide power chip is electrically connected to the second half-bridge drive negative terminal and the second half-bridge drive positive terminal respectively; On the second half-bridge parallel-connected silicon carbide power chip, a second type of copper pillar is provided. On the side of the second type of copper pillar opposite to the first half-bridge power module, it is connected to the first heat-dissipating copper layer; at a position near the bottom end of the power copper layer, a power AC terminal is provided.

[0008] Preferably, at a position near the bottom end of the power copper layer, a third type of copper pillar is provided. On the side of the third type of copper pillar opposite to the first half-bridge power module, it is connected to the second heat-dissipating copper layer; Preferably, the water-cooling heat-dissipating module includes a plurality of water-cooling heat-dissipating units. The plurality of water-cooling heat-dissipating units are arranged in parallel, and there is a gap between adjacent two water-cooling heat-dissipating units to form a sandwich layer; On the same-side ends of the plurality of water-cooling heat-dissipating units, a transmission conduit is connected; on the outer wall of the water-cooling heat-dissipating unit on one side of the water-cooling heat-dissipating module, a water inlet interface is provided, and on the outer wall of the water-cooling heat-dissipating unit on one side of the water-cooling heat-dissipating module, a water outlet interface is provided.

[0009] Preferably, connection rings are correspondingly arranged on the bottom end faces of the plurality of water-cooled heat dissipation units, and connectors are inserted through the connection rings.

[0010] Preferably, the connector includes fixing nuts arranged at both ends of a connecting rod, and the connecting rod is inserted through the connection ring; Circular grooves are respectively arranged on both sides of the connecting ring on the connecting rod, and snap rings are arranged in the circular grooves.

[0011] Preferably, the water-cooled heat dissipation unit includes a rectangular heat dissipation box, a heat dissipation column body is arranged in the rectangular heat dissipation box, liquid through holes are respectively arranged at both ends of the rectangular heat dissipation box, and the liquid through holes are connected to the transmission conduits.

[0012] The present invention provides a method for using a water-cooled heat dissipation double-sided power module system with high power density. Applying the above-mentioned water-cooled heat dissipation double-sided power module system with high power density, the method includes the following steps: Coolant is injected into the water-cooled heat dissipation units in the water-cooled heat dissipation module; the outer sides of the double-sided power modules are in external contact with the sandwich formed between two adjacent water-cooled heat dissipation units to achieve double-sided synchronous heat dissipation.

[0013] Compared with the prior art, the present invention has the following beneficial technical effects: The present invention provides a water-cooled heat dissipation double-sided power module system with high power density. In this system, double-sided power modules are arranged at equal intervals in the water-cooled heat dissipation module, and the double-sided power modules achieve double-sided synchronous heat dissipation through the water-cooled heat dissipation module, improving the natural convection heat dissipation efficiency, avoiding temperature imbalance in the double-sided power modules, and extending the service life of the double-sided power modules.

[0014] Furthermore, a driving conductive copper layer, a first power conductive copper layer, and a second power conductive copper layer are arranged on the first half-bridge DBC substrate in this system. Through the staggered arrangement of the separated conductive copper layers in cooperation with the water-cooled heat dissipation module, the synergistic effect of double-sided heat dissipation is realized, and the interface reliability of the double-sided power module under extreme temperature cycles is significantly improved.

[0015] Even further, in the double-sided power module of this system, the first half-bridge power module and the second half-bridge power module are symmetrically arranged, so that the current paths formed on the first half-bridge power module and the second half-bridge power module form reverse magnetic fields, effectively canceling the loop parasitic inductance.

[0016] Even further, in this system, the terminals are isolated from each other, eliminating the interference of the common source inductance on the gate drive, optimizing the installation space of the external laminated busbar, and suppressing the influence of the lead parasitic parameters on the main circuit.

[0017] Furthermore, in this system, the water-cooling heat dissipation module forms a sandwich structure through multiple parallel water-cooling heat dissipation units, constructs an air convection channel through the sandwich structure, and the parallel flow channels ensure the uniform distribution of the coolant to the double-sided power module, improving the heat dissipation efficiency. Brief Description of the Drawings

[0018] Figure 1 It is a schematic structural diagram of a water-cooling heat dissipation double-sided power module system provided by the present invention; Figure 2 It is a schematic diagram of the disassembly of each structure in a water-cooling heat dissipation double-sided power module system provided by the present invention; Figure 3 It is a schematic structural diagram of a silicon carbide power module in a water-cooling heat dissipation double-sided power module system provided by the present invention; Figure 4 It is a schematic diagram of the structure after the silicon carbide power module in a water-cooling heat dissipation double-sided power module system provided by the present invention is disassembled; Figure 5 It is a disassembly diagram of the first half-bridge DBC substrate in a water-cooling heat dissipation double-sided power module system provided by the present invention; Figure 6 It is a disassembly diagram of the second half-bridge DBC substrate in a water-cooling heat dissipation double-sided power module system provided by the present invention; Figure 7 It is a schematic structural diagram of the first type of copper column in a water-cooling heat dissipation double-sided power module system provided by the present invention; In the drawings: 1. First half-bridge power negative terminal; 2. First half-bridge power positive terminal; 3. First half-bridge parallel silicon carbide power chips; 4. First type of copper column; 5. First half-bridge drive negative terminal; 6. First half-bridge drive positive terminal; 7. Integrated drive resistor; 8. First half-bridge DBC substrate; 9. Power AC terminal; 10. Second half-bridge parallel silicon carbide power chips; 11. Second type of copper column; 12. Second half-bridge drive negative terminal; 13. Second half-bridge drive positive terminal; 14. Third type of copper column; 15. Second half-bridge DBC substrate; 16. Double-sided power module; 17. Water-cooling heat dissipation unit; 18. Water inlet interface; 19. Heat dissipation column body; 20. Water outlet interface; 21. Connector. Detailed Description of the Embodiments

[0019] In the following, only some exemplary embodiments are briefly described. As those skilled in the art can recognize, the described embodiments can be modified in various different ways without departing from the spirit or scope of the present invention. Therefore, the drawings and the description are considered to be exemplary in nature rather than restrictive.

[0020] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation to the present invention.

[0021] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, "a plurality of" means two or more unless otherwise specifically defined.

[0022] In the present invention, unless otherwise clearly defined and limited, the terms "mounted", "connected", "coupled", "fixed", etc. should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection, an electrical connection, or a communication connection; it may be directly connected, or indirectly connected through an intermediate medium, and it may be the internal communication of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0023] In the present invention, unless otherwise clearly defined and limited, the first feature being "on" or "under" the second feature may include the direct contact between the first and second features, or may include the situation where the first and second features are not in direct contact but in contact through other features therebetween. Moreover, the first feature being "above", "over" and "on top of" the second feature includes that the first feature is directly above and obliquely above the second feature, or merely means that the horizontal height of the first feature is higher than that of the second feature. The first feature being "under", "beneath" and "underneath" the second feature includes that the first feature is directly below and obliquely below the second feature, or merely means that the horizontal height of the first feature is lower than that of the second feature.

[0024] The embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0025] The present invention provides a water-cooled heat dissipation double-sided power module system with high power density, as Figures 1 to 7As shown, it includes a water-cooled heat dissipation module. Double-sided power modules 16 are installed at equal intervals in the interlayer of the water-cooled heat dissipation module. The double-sided power modules 16 achieve double-sided synchronous heat dissipation through the water-cooled heat dissipation module, improving the natural convection heat dissipation efficiency and extending the service life of the double-sided power modules 16.

[0026] As Figures 1 to 7 shown, the double-sided power module 16 includes a first half-bridge power module and a second half-bridge power module. The first half-bridge power module and the second half-bridge power module are arranged in parallel, and the outer end faces of the first half-bridge power module and the second half-bridge power module are attached to the inner wall of the interlayer in the water-cooled heat dissipation module.

[0027] As Figures 2 to 7 shown, the double-sided power module 16 includes a first half-bridge power module and a second half-bridge power module. The first half-bridge power module and the second half-bridge power module are arranged in parallel, and the outer end faces of the first half-bridge power module and the second half-bridge power module are attached to the inner wall of the interlayer in the water-cooled heat dissipation module.

[0028] As Figure 5 and Figure 7As shown, the first half-bridge power module includes a first half-bridge DBC substrate 8. A first heat dissipation copper layer is provided on the first half-bridge DBC substrate 8. The first heat dissipation copper layer is in a "middle" character structure. Drive conductive copper layers are provided on the first half-bridge DBC substrate 8 at positions near the top ends on the left and right sides of the first heat dissipation copper layer. A first half-bridge drive negative terminal 5 and a first half-bridge drive positive terminal 6 are connected to each drive conductive copper layer. The first half-bridge drive negative terminal 5 and the first half-bridge drive positive terminal 6 are arranged in parallel with each other. Second heat dissipation copper layers are provided at positions near the bottom ends on both sides of the first heat dissipation copper layer. The heat dissipation area is enlarged through the second heat dissipation copper layer and the first heat dissipation copper layer. The heat is evenly dispersed to both sides of the substrate through the central symmetry structure, reducing the risk of local heat concentration. At the same time, the second heat dissipation copper layer and the first heat dissipation copper layer form a three-dimensional heat flow channel, significantly reducing the thermal resistance. A power conductive copper layer is provided on the side of the second heat dissipation copper layer away from the first heat dissipation copper layer. A first half-bridge parallel-connected silicon carbide power chip 3 is provided at a position near the top end of the power conductive copper layer. The first half-bridge parallel-connected silicon carbide power chip 3 is fixed to the power conductive copper layer by welding or sintering. The drive source electrode of the first half-bridge parallel-connected silicon carbide power chip 3 is electrically connected to the first half-bridge drive negative terminal 5, and the drive gate electrode of the first half-bridge parallel-connected silicon carbide power chip 3 is electrically connected to the first half-bridge drive positive terminal 6. In this system, by integrating the power conductive copper layer and the heat dissipation copper layer, the current path from the power source electrode to the second half-bridge is shortened, the inductance of the power loop is reduced, and the mutual inductance of the loop is reduced through the coupling effect of the parallel-arranged first half-bridge drive negative terminal 5 and the first half-bridge drive positive terminal 6, suppressing voltage spikes. A first type of copper column 4 is installed on the power source electrode of the first half-bridge parallel-connected silicon carbide power chip 3. One side of the first type of copper column 4 is connected to the second half-bridge power module. The bottoms of the first heat dissipation copper layer and the power conductive copper layer are connected with power terminals. The power terminals are in an "L" character structure. The power terminals include a first half-bridge power negative terminal 1 and a first half-bridge power positive terminal 2. The first half-bridge power negative terminal 1 is installed at a position near the bottom end of the first heat dissipation copper layer, and the first half-bridge power positive terminals 2 are respectively installed at positions near the bottom ends of the power conductive copper layers, avoiding local overcurrent, reducing the intersection of current paths, and reducing the mutual inductance coupling effect.

[0029] As Figure 4 and Figure 6 shown, the second half-bridge power module includes a second half-bridge DBC substrate 15. A power copper layer and a drive copper layer are provided on the second half-bridge DBC substrate 15. A second half-bridge drive negative terminal 12 and a second half-bridge drive positive terminal 13 are connected to the drive copper layer at positions near the top end. A second half-bridge parallel-connected silicon carbide power chip 10 is disposed below the second half-bridge drive negative terminal 12 on the power copper layer. The second half-bridge parallel-connected silicon carbide power chips 10 are electrically connected to the second half-bridge drive negative terminal 12 and the second half-bridge drive positive terminal 13 respectively. That is, the drive source electrode of the second half-bridge parallel-connected silicon carbide power chip 10 is electrically connected to the second half-bridge drive negative terminal 12, the drive gate electrode of the second half-bridge parallel-connected silicon carbide power chip 10 is electrically connected to the second half-bridge drive positive terminal 13, and a second type of copper column 11 is disposed on the power source electrode of the second half-bridge parallel-connected silicon carbide power chip 10. The side of the second type of copper column 11 opposite to the first half-bridge power module is connected to the first heat dissipation copper layer to form a vertical interconnection channel of the half-bridge module, shortening the power loop length, significantly reducing the high-frequency current skin effect, maintaining a low-impedance path, and at the same time serving as a vertical heat dissipation channel to directly transfer the chip heat to the first half-bridge heat dissipation layer, forming a composite heat dissipation mode of double-sided heat dissipation and vertical heat conduction, improving the heat dissipation efficiency, achieving uniform heat dissipation under high heat flux density, and avoiding local overheating. A third type of copper column 14 is disposed at a position near the bottom end of the power copper layer. The side of the third type of copper column 14 opposite to the first half-bridge power module is connected to the second heat dissipation copper layer on the first half-bridge DBC substrate 8 to form a heat conduction network, making the heat dissipation more uniform. A power AC terminal 9 is disposed at a position near the top end of the power copper layer, forming a low-inductance power loop with the second type of copper column 11 to reduce the loop inductance.

[0030] Due to the spatially staggered positions of the two chips, at the moment of the current commutation action, two equivalent loops with opposite current flow directions will appear in the packaging structure of the present invention. In this embodiment, Figure 4 shows a path with opposite current flow directions. The current flow path of the first half-bridge power module starts from the first half-bridge power positive terminal 2, flows through a first half-bridge parallel-connected silicon carbide power chip 3 and the first type of copper column 4, and flows to the power AC terminal 9. For the current flow path of the second half-bridge power module, the current flowing to the power AC terminal 9 flows to the second half-bridge parallel-connected silicon carbide power chip 10 and the second type of copper column 11, and finally flows to the first half-bridge power negative terminal 1. Each commutation branch loop has a current flow loop along the direction parallel to the short side of the power module. For the two branches inside, the current flow directions of the two branches are opposite. Therefore, the magnetic flux generated by each branch in space will generate an equivalent negative parasitic mutual inductance in the adjacent branch, thereby reducing the parasitic inductance of each branch, and thus greatly reducing the parasitic inductance of the total commutation loop.

[0031] As Figure 1 and Figure 2As shown in the figure, the water-cooled heat dissipation module includes a plurality of water-cooled heat dissipation units 17. The plurality of water-cooled heat dissipation units 17 are arranged in parallel, and a gap is provided between adjacent two water-cooled heat dissipation units 17 to form a sandwich structure. The double-sided power module 16 is installed in the sandwich structure. The sandwich structure formed by the plurality of water-cooled heat dissipation units 17 serves as an air convection channel, and the parallel flow channels ensure the uniform distribution of the coolant to the double-sided power module 16. Transmission ducts are connected to the same-side ends of the plurality of water-cooled heat dissipation units 17. An inlet interface 18 is provided on the outer wall of the water-cooled heat dissipation unit 17 on one side of the water-cooled heat dissipation module, and an outlet interface 20 is provided on the outer wall of the water-cooled heat dissipation unit 17 on one side of the water-cooled heat dissipation module. The coolant flows in from the same side of the inlet interface 18, and after flowing in parallel through each unit, it converges to the outlet interface 20. Connecting rings are correspondingly provided on the bottom end faces of the plurality of water-cooled heat dissipation units 17, and a connector 21 is inserted through the connecting rings. The rapid assembly of the plurality of water-cooled heat dissipation units 17 is achieved through the connector 21. The connector 21 includes fixing nuts provided at both ends of a connecting rod, and the connecting rod is inserted through the connecting ring. Annular clamping grooves are respectively provided on both sides of the connecting rod where the connecting ring is located, and an open circlip is provided in the annular clamping groove. The water-cooled heat dissipation unit 17 includes a rectangular heat dissipation box, and a heat dissipation column body 18 is provided in the rectangular heat dissipation box. The heat exchange area is increased through the heat dissipation column body 18, the thermal boundary layer is destroyed, and the convective heat transfer coefficient is improved. Liquid through holes are respectively provided at both ends of the rectangular heat dissipation box, and the liquid through holes are connected to the transmission ducts.

[0032] The present invention proposes a usage method for a water-cooled heat dissipation double-sided power module system with high power density. Applying the above-mentioned water-cooled heat dissipation double-sided power module system with high power density, it includes the following steps: Coolant is introduced into the water-cooled heat dissipation module Specifically, the coolant is evenly distributed to each water-cooled heat dissipation unit 17 through the inlet interface 18. The outer side end face of the double-sided power module 16 located between adjacent water-cooled heat dissipation units 17 realizes double-sided synchronous heat dissipation by fitting the outer wall of the water-cooled heat dissipation unit 17, that is, the outer wall of the first half-bridge DBC substrate 8 in the first half-bridge power module contacts one outer wall of the sandwich in the water-cooled heat dissipation unit 17, and the outer wall of the second half-bridge DBC substrate 15 in the second half-bridge power module contacts the other outer wall of the sandwich in the water-cooled heat dissipation unit 17. The coolant generates a turbulent effect through the cubic heat dissipation column body 18, and the heat generated by the double-sided power module 16 is three-dimensionally diffused through the water-cooling system. During operation, the path of the current flowing through a first half-bridge parallel-connected silicon carbide power chip 3 and a first type of copper column 4 to the power AC terminal 9. For the current flow path of the second half-bridge power module, the current flowing to the power AC terminal 9 flows to the second half-bridge parallel-connected silicon carbide power chips 10 and the second type of copper column 11, and finally flows to the first half-bridge power negative terminal 1.

[0033] The foregoing has shown and described the basic principles, main features and advantages of the present invention. For a person skilled in the art, it is obvious that the present invention is not limited to the details of the above-mentioned exemplary embodiments, and without departing from the spirit or basic features of the present invention, the present invention can be implemented in other specific forms. Therefore, from any point of view, the embodiments should be regarded as exemplary and non-limiting. The scope of the present invention is defined by the appended claims rather than the above description. Therefore, all changes falling within the meaning and scope of the equivalent elements of the claims are intended to be embraced by the present invention. Any reference signs in the claims should not be construed as limiting the claims concerned.

[0034] In addition, it should be understood that although this specification is described according to embodiments, not every embodiment only contains an independent technical solution. This narrative manner of the specification is only for clarity. Persons skilled in the art should regard the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by persons skilled in the art. The above content is only to illustrate the technical idea of the present invention and cannot be used to limit the protection scope of the present invention. Any modification made on the basis of the technical solution according to the technical idea proposed by the present invention falls within the protection scope of the claims of the present invention.

Claims

1. A high power density water-cooled double-sided power module system, characterized in that: It comprises a water-cooling heat dissipation module, wherein the interlayer of the water-cooling heat dissipation module has double-sided power modules (16) installed at equal intervals; The double-sided power module (16) comprises a first half-bridge power module and a second half-bridge power module, the first half-bridge power module and the second half-bridge power module are arranged in parallel, and the outer end surfaces of the first half-bridge power module and the second half-bridge power module are attached to the inner wall of the interlayer in the water-cooling heat dissipation module.

2. A high power density water-cooled double-sided power module system according to claim 1, characterized in that: The first half-bridge power module comprises a first half-bridge DBC substrate (8), a first heat dissipation copper layer is arranged on the first half-bridge DBC substrate (8), driving conductive copper layers are arranged on both sides of the first heat dissipation copper layer near the top end thereof, a first half-bridge driving negative terminal (5) and a first half-bridge driving positive terminal (6) are connected to the driving conductive copper layers, and the first half-bridge driving negative terminal (5) and the first half-bridge driving positive terminal (6) are arranged in parallel; A second heat dissipation copper layer is arranged on both sides of the first heat dissipation copper layer near its bottom end, a power conductive copper layer is arranged on the side of the second heat dissipation copper layer away from the first heat dissipation copper layer, a first half-bridge parallel silicon carbide power chip (3) is arranged on the power conductive copper layer near its top end, and the first half-bridge parallel silicon carbide power chip (3) is electrically connected to the first half-bridge drive negative terminal (5) and the first half-bridge drive positive terminal (6) respectively; A first type of copper pillar (4) is mounted on the first half-bridge parallel silicon carbide power chip (3), and the first type of copper pillar (4) is connected to the second half-bridge power module; The bottoms of the first heat dissipation copper layer and the power conductive copper layer are connected with power terminals.

3. A high power density water-cooled double-sided power module system according to claim 2, characterized in that: The power terminals include a first half-bridge power negative terminal (1) and a first half-bridge power positive terminal (2); The first half-bridge power negative terminal (1) is mounted on the first heat dissipation copper layer at a position close to its bottom end, and the first half-bridge power positive terminal (2) is mounted on the power conductive copper layer at a position close to its bottom end.

4. The high power density water-cooled double-sided power module system according to claim 2, characterized in that: The second half-bridge power module comprises a second half-bridge DBC substrate (15), on which a power copper layer and a driving copper layer are arranged; The driving copper layer is connected to a second half-bridge driving negative terminal (12) and a second half-bridge driving positive terminal (13) near its top end; A second half-bridge parallel silicon carbide power chip (10) is arranged on the power copper layer below the second half-bridge driving negative terminal (12), and the second half-bridge parallel silicon carbide power chip (10) is electrically connected to the second half-bridge driving negative terminal (12) and the second half-bridge driving positive terminal (13) respectively; A second type of copper pillar (11) is provided on the second half-bridge parallel silicon carbide power chip (10); the second type of copper pillar (11) is connected to the first heat dissipation copper layer on a side opposite to the first half-bridge power module; and a power AC terminal (9) is provided on the power copper layer near its bottom end.

5. The high power density water-cooled double-sided power module system according to claim 4, characterized in that: A third type of copper column (14) is arranged on the power copper layer near its bottom end, and the side of the third type of copper column (14) opposite to the first half-bridge power module is connected to the second heat dissipation copper layer.

6. The high power density water-cooled double-sided power module system according to claim 1, characterized in that: The water-cooling heat dissipation module comprises a plurality of water-cooling heat dissipation units (17), wherein the plurality of water-cooling heat dissipation units (17) are arranged in parallel, and a gap is provided between two adjacent water-cooling heat dissipation units (17) to form a sandwich; A transmission conduit is connected to the ends on the same side of the plurality of water-cooling heat dissipation units (17); a water inlet interface (18) is provided on the outer wall of the water-cooling heat dissipation unit (17) located on one side of the water-cooling heat dissipation module, and a water outlet interface (20) is provided on the outer wall of the water-cooling heat dissipation unit (17) located on one side of the water-cooling heat dissipation module.

7. A high power density water-cooled double-sided power module system according to claim 6, characterized in that: Connecting rings are correspondingly arranged on the bottom end surfaces of the plurality of water-cooling and heat dissipation units (17), and connectors are passed through the connecting rings.

8. The high power density water-cooled double-sided power module system according to claim 7, characterized in that: The connector includes a connecting rod with fixing nuts disposed on both ends thereof, and the connecting rod is passed through the connecting ring; Annular clamping grooves are respectively arranged on the connecting rod at both sides of the connecting ring, and open clamping springs are arranged in the annular clamping grooves.

9. The high power density water-cooled double-sided power module system according to claim 7, characterized in that: The water-cooling heat dissipation unit (17) comprises a rectangular heat dissipation box, a heat dissipation column (18) is arranged in the rectangular heat dissipation box, and liquid through holes are respectively arranged at both ends of the rectangular heat dissipation box, and the liquid through holes are connected to the transmission conduit.

10. A method for using a high power density water-cooled double-sided power module system, using the high power density water-cooled double-sided power module system according to any one of claims 1 to 9, characterized in that: The following steps are involved: The coolant is injected into the water-cooling heat dissipation unit (17) in the water-cooling heat dissipation module; the outer side surface of the double-sided power module (16) is in external contact with the sandwich formed between two adjacent water-cooling heat dissipation units (17) to achieve double-sided synchronous heat dissipation.

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