Erbium and ytterbium co-doped WS2 (Er-Yb) / Si (P) photoelectric detector

Abstract

The invention relates to the technical field of photoelectric device manufacturing, in particular to a WS2 (Er-Yb) / Si (P) photoelectric detector based on erbium and ytterbium co-doping, and the manufacturing method of the device comprises the steps: segmenting and cleaning a silicon substrate; the preparation method comprises the following steps: preparing an erbium and ytterbium co-doped WS2 material on a substrate based on an improved chemical vapor deposition method to obtain a sample material; manufacturing a photoelectric detector based on the sample material; through erbium and ytterbium co-doping, the band gap of a photosensitive layer material of a traditional photoelectric sensor is reduced, and a new impurity energy level is introduced, so that the optical frequency response range of the photoelectric detector is expanded; the sublimation reaction is replaced by a melting additional sublimation reaction method, and the reaction is limited on the two surfaces of the substrate, so that the stability of the preparation process of the photoelectric detector raw material is improved, and the performance consistency, the long-term reliability, the production efficiency and the manufacturing cost of the photoelectric detector are favorably controlled.

Description

Technical Field

[0001] The present invention relates to the technical field of optoelectronic device manufacturing, and particularly relates to a WS2(Er-Yb) / Si(P) photodetector based on co-doping of erbium and ytterbium. Background Art

[0002] In the prior art, most of the photodetectors based on chemically synthesized two-dimensional materials are limited by their preparation processes and inevitably introduce natural defects. These defects have a great impact on optoelectronic detection devices. Currently, the main solutions include two categories: vacancy filling and element doping. Among them, element doping has unique advantages. It can not only effectively fill the internal defects of the material, but also change the inherent properties of the material, thereby expanding the application scope of the material. Currently, most of the research on two-dimensional material doping uses transition metal elements such as Nb, V, and Re as dopants.

[0003] In addition, most of the photodetectors based on chemically synthesized two-dimensional materials have a high responsiveness only to one frequency band and are much weaker in responsiveness to other bands.

[0004] The outer electron orbits of lanthanide elements are more abundant. After forming compounds with other atoms, other impurity orbits may be generated, thereby changing some physical properties of the material. Therefore, the materials prepared by doping with lanthanide elements are expected to have a strong response to light of more frequencies, which is of great significance for the development of photodetectors. Summary of the Invention

[0005] In view of this, the present invention discloses a WS2(Er-Yb) / Si(P) photodetector based on co-doping of erbium and ytterbium to solve the above problems. The manufacturing method of the device includes:

[0006] S1. Divide and clean the silicon substrate; wherein, the cleaning includes successively cleaning the silicon substrate with deionized water, absolute ethanol, acetone, and isopropanol.

[0007] S2. Prepare the erbium and ytterbium co-doped WS2 material on the silicon substrate based on an improved chemical vapor deposition method to obtain a sample material; wherein, the raw materials of the erbium and ytterbium co-doped WS2 material include: sublimed sulfur powder, tungsten trioxide powder, erbium chloride powder, ytterbium chloride powder, and sodium chloride powder.

[0008] S3. Use micro-nano processing to fabricate a photodetector based on the sample material.

[0009] S3.1. Spin-coat a support layer on the sample material and perform a baking operation to obtain Sample 1.

[0010] S3.2. Spin-coat a photoresist on Sample 1 and perform a baking operation to obtain Sample 2.

[0011] S3.3. Perform laser direct writing operation on Sample 2 to obtain Sample 3;

[0012] S3.4. Perform development operation on Sample 3 to obtain Sample 4;

[0013] S3.5. Perform magnetron sputtering coating operation on Sample 4 to obtain Sample 5;

[0014] S3.6. Perform degumming operation on Sample 5 to obtain the erbium and ytterbium co-doped WS2(Er-Yb) / Si(P) photodetector.

[0015] The beneficial effects of the present invention include: through the co-doping of erbium and ytterbium, the band gap of the photosensitive layer material of the traditional photoelectric sensor is reduced and a new impurity energy level is introduced, improving the optical frequency response range of the photodetector. The obtained erbium and ytterbium co-doped WS2(Er-Yb) / Si(P) photodetector shows higher optical responsivity, external quantum efficiency and specific detectivity than the heterojunction photodetector composed of intrinsic WS2 material under the excitation of wavelengths of 450nm and 635nm; by adopting the improved chemical vapor deposition method, using the method of melting additional sublimation reaction to replace the sublimation reaction and restricting the reaction on both sides of the substrate, the stability of the preparation process of the photodetector raw materials is improved, which is beneficial to controlling the performance consistency, long-term reliability, production efficiency and manufacturing cost of the photodetector. Brief Description of the Drawings

[0016] Figure 1 It is a schematic diagram of preparing erbium and ytterbium co-doped WS2 material based on the improved chemical vapor deposition method in the present invention;

[0017] Figure 2 It is the temperature curve of the tube furnace during heating in the embodiment of the present invention;

[0018] Figure 3 It is the optical picture of the erbium and ytterbium co-doped WS2 material in the embodiment of the present invention;

[0019] Figure 4 It is the Raman spectrum test result of the erbium and ytterbium co-doped WS2 material in the embodiment of the present invention; among them, a, b, and c are the Raman spectrum test results of the erbium and ytterbium co-doped WS2 material in different intervals;

[0020] Figure 5 It is the energy dispersive X-ray spectrometer test result of the erbium and ytterbium co-doped WS2 material in the embodiment of the present invention; among them, a is the scanning electron microscope picture of the erbium and ytterbium co-doped WS2 material, and b is the EDS spectrum picture of the erbium and ytterbium co-doped WS2 material;

[0021] Figure 6This is the X-ray photoelectron spectroscopy test result of the erbium- and ytterbium-codoped WS2 material in the embodiment of the present invention. Among them, a is the total spectrum of the spectroscopy test, and b, c, and d are the fine spectra of some intervals of the spectroscopy test;

[0022] Figure 7 This is the transmission electron microscopy test result of the erbium- and ytterbium-codoped WS2 material in the embodiment of the present invention. Among them, a is the transmission electron micrograph of the erbium- and ytterbium-codoped WS2 material, and b is the selected area electron diffraction pattern of the erbium- and ytterbium-codoped WS2 material;

[0023] Figure 8 This is the photoluminescence spectroscopy test result of the erbium- and ytterbium-codoped WS2 material in the embodiment of the present invention. Among them, a is the photoluminescence spectrum of the intrinsic WS2 material, and b is the photoluminescence spectrum of the erbium- and ytterbium-codoped WS2 material;

[0024] Figure 9 This is the schematic diagram of the photodetector in the embodiment of the present invention. Among them, a is the design schematic diagram of the photodetector, and b is the physical diagram of the photodetector obtained by micro-nano processing;

[0025] Figure 10 This is the response curve of the photodetector to light sources with wavelengths of 450 nm and 635 nm in the embodiment of the present invention. Among them, a is the response voltage-current curve of the photodetector at a wavelength of 635 nm, b is the response voltage-current curve of the photodetector at a wavelength of 450 nm, c is the time-current relationship corresponding to the photodetector at a wavelength of 635 nm under a 0 V bias, d is the time-current relationship corresponding to the photodetector at a wavelength of 450 nm under a 0 V bias, e is the responsivity comparison diagram of the photodetector at wavelengths of 450 nm and 635 nm, and f is the comparison diagram of the external quantum efficiency and specific detectivity of the photodetector at wavelengths of 450 nm and 635 nm. Detailed implementation manners

[0026] In order to make the purpose, technical solutions, features, and advantages of the present invention clearer and more understandable, the present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0027] This embodiment includes an Er-Yb / Si(P) photodetector based on erbium- and ytterbium-codoped WS2. The manufacturing method of the device includes:

[0028] S1. Divide and clean the silicon substrate.

[0029] Specifically, in this embodiment, a silicon wafer with an area of 1.2 cm × 2.2 cm is used as the substrate.

[0030] Further, place the silicon wafer with the rough side facing up on the laser cutting workbench, set the scanning pattern of the laser, and wait for the laser to perform pre-treatment cutting on the silicon wafer. After cutting is completed, wear gloves to separate the silicon wafers and place them on the wafer washing rack for preparation of cleaning.

[0031] Preferably, place the wafer washing rack with the silicon wafers in a clean beaker, add deionized water to cover the silicon wafers, place the beaker in an ultrasonic cleaner, start the ultrasonic cleaner, set the time to 10 minutes, and initially clean some water-soluble impurities on the surface of the silicon wafers with deionized water. After cleaning is completed, use clean deionized water to clean the bottom of the beaker.

[0032] Preferably, add absolute ethanol into the beaker to clean organic impurities and hydrophilic substances, set the cleaning time to 10 minutes, and use clean absolute ethanol to clean the beaker after cleaning is completed.

[0033] Preferably, add acetone into the beaker and set the cleaning time to 10 minutes. Acetone has stronger solubility for organic substances and has a better cleaning effect on hydrophobic substances. After acetone cleaning is completed, use clean acetone to clean the beaker.

[0034] Preferably, add isopropyl alcohol into the beaker and set the cleaning time to 10 minutes. Isopropyl alcohol can not only further dissolve the organic impurities on the surface of the silicon wafer but also remove some residual acetone left over from the previous cleaning step. After the set time, the silicon wafers are cleaned, and the silicon wafers are placed in absolute ethanol for storage.

[0035] S2. Prepare erbium and ytterbium co-doped WS2 material on a silicon substrate based on an improved chemical vapor deposition method to obtain a sample material.

[0036] Further, as Figure 1 shown, in this embodiment, an improved chemical vapor deposition method is used to prepare erbium and ytterbium co-doped WS2 material. The traditional chemical vapor deposition method can controllably and efficiently obtain two-dimensional materials, but it is affected by the surrounding environment and cannot stably obtain two-dimensional materials with similar quality under the same parameters. Therefore, the present invention uses an improved chemical vapor deposition method, using the method of melting additional sublimation reaction to replace the sublimation reaction and restricting the reaction to both sides of the substrate, so as to grow two-dimensional materials more stably.

[0037] Specifically, prepare two quartz boats and clean them thoroughly with absolute ethanol. Place a weighing paper on an electronic analytical balance, weigh 300 mg of sublimed sulfur powder, and evenly spread the powder inside the first quartz boat. Take another clean weighing paper, use the electronic analytical balance to weigh 30 mg of tungsten trioxide powder, 2 mg of erbium chloride powder, 2 mg of ytterbium chloride powder, and 2 mg of sodium chloride powder respectively. Mix these powders evenly, take out a silicon substrate, evenly spread the mixed powder on the polished surface of the silicon substrate, and place the silicon substrate on the second quartz boat. Take another silicon substrate, use high-purity nitrogen to blow dry the absolute ethanol on the surface of the silicon substrate, and place the polished surface of the silicon substrate downward above the first silicon substrate.

[0038] Further, push the second quartz boat into the high-temperature zone of the quartz tube of the tube furnace, and push the first quartz boat into the low-temperature zone 20 cm away from the high-temperature zone. Use a flange ring to tighten both ends of the quartz tube for convenient subsequent operations, and tighten the inlet and outlet of both ends of the tube furnace. Open the vacuum pump connected to the tube furnace to start pumping air. When the pressure inside the tube furnace drops to 1 Torr, close the vacuum pump and open the inlet, and introduce high-purity argon into the tube furnace at a flow rate of 1000 sccm to restore the pressure inside the tube furnace to normal pressure, then close the inlet. Repeat the pumping-air - inflating operation three times to remove the residual impurity gases inside the tube. When the pressure returns to normal pressure for the last time, adjust the argon flow rate at the inlet to 50 sccm, and open the outlet.

[0039] Further, set the heating program of the tube furnace.

[0040] Preferably, as Figure 2 shown, set the temperature control program for the high-temperature zone: the high-temperature zone is heated from room temperature to the reaction temperature of 950 °C in 45 minutes, and kept at this temperature for 10 minutes, then set the program to stop heating and let the high-temperature zone cool naturally to room temperature; set the temperature control program for the low-temperature zone: keep the low-temperature zone at room temperature for 25 minutes, then heat it to 200 °C in 20 minutes and keep it at this temperature for 10 minutes, and stop heating to let it cool naturally to room temperature.

[0041] Further, after setting the program, start both heating zones simultaneously. When the high-temperature zone is heated to 850 °C, replace the argon at the inlet with an argon-hydrogen mixture with a flow rate of 80 sccm and a volume ratio of 9:1. After the reaction is completed, let it cool naturally to 500 °C, replace the argon-hydrogen mixture with argon with a flow rate of 100 sccm, continue to cool to room temperature, then close the inlet and outlet, take out the quartz boat from the tube furnace, and take out the silicon wafer from the quartz boat to obtain the erbium- and ytterbium-codoped WS2 material. The optical picture of the material is as Figure 3 shown.

[0042] Preferably, the erbium- and ytterbium-codoped WS2 material is characterized.

[0043] Preferably, Raman spectroscopy is performed on the material; the Raman spectroscopy test results of the material are as Figure 4 shown. It can be seen from the results that the doped and intrinsic WS2 exhibit E2g and A1g characteristic peaks at 350.7 cm-1 and 420.8 cm-1 respectively. The peak positions of the two are not very different, but the intensities at different peak positions are different. After doping with rare earth elements, the intensity at the typical characteristic peaks is stronger than that of the intrinsic material. Figure 4 In [figure], b and c respectively show the relevant characteristic peaks of Er and Yb at 268 cm-1 and 475 cm-1 and some fine peaks at other positions. Due to the low doping concentration, the corresponding peak intensities are weak. The introduction of rare earth elements changes part of the crystal structure of the material and enhances the intensity of the main peaks of the material, while some secondary peaks are correspondingly weakened. The peaks near 141.6 and 173.8 cm-1 are weaker than those of the intrinsic material.

[0044] Preferably, the material is tested with an energy-dispersive X-ray spectrometer (EDS, Energy-Dispersive Spectroscopy); the test results of the material are as Figure 5 shown. Figure a is the scanning electron microscope (SEM, Scanning Electron Microscope) image of the sample. It can be seen that the surface of the material is relatively flat. Figure b is the EDS spectrum of the sample. During the growth of the material, there are more ytterbium-containing precursors in this region, resulting in too much aggregation in some regions. Therefore, in addition to the W and S elements, there are also Er and Yb elements, but the Yb element is more.

[0045] Preferably, the material is tested with X-ray photoelectron spectroscopy (XPS, X-ray Photoelectron Pectroscopy); the XPS survey spectrum and related fine spectra of the material are as Figure 6 shown. After processing, the S2p3 / 2 and S2p1 / 2 peaks at 162.7 eV and 164.0 eV can be obtained, and the W4f7 / 2, W4f5 / 2 and W5f3 / 2 peaks at 33.1 eV, 35.2 eV and 38.5 eV, which prove the existence of S and W elements. In addition, the existence of Er and Yb element peaks is also obtained in the XPS fine spectra. The Er4d3 / 2, Yb4d5 / 2 and Yb2O3 / 2 peaks are found at 174.8 eV, 179.4 eV and 186.3 eV, which prove the existence of the rare earth elements Er and Yb.

[0046] Preferably, the material is tested by transmission electron microscope (TEM); the high-resolution TEM and diffraction patterns of the material are as Figure 7 shown. It can be seen that the grown material has good crystallinity and obvious stripes. After data processing, the lattice fringe spacing is 0.278 nm, which conforms to the characteristics of WS2 crystal material. From the local enlarged view, it can be seen that since the rare earth atom has a larger radius than the W atom, it appears darker in the picture. At the same time, lattice distortion is found at some positions from the local enlarged view, which conforms to the theory and phenomenon that lattice distortion will occur to a certain extent after doping. In addition, it can be seen from the diffraction pattern that the WS2 hexagonal symmetry crystal plane.

[0047] Preferably, the material is tested by photoluminescence spectroscopy (PL); Figure 8 shows the position changes of the peaks before and after doping with rare earth elements. Since the doping of rare earth elements affects the band gap width of WS2, the band gap width decreases, and new peaks are generated due to the introduction of impurity levels, corresponding to the two peaks at the edge and center of the intrinsic WS2 in the figure. After doping with rare earth elements, new peaks are generated due to the red shift of the peak position.

[0048] S3. Fabricate a photodetector based on the sample material by micro-nano processing.

[0049] Specifically, Cr / Au electrodes are used in this embodiment. The fabrication process of the photodetector includes:

[0050] S3.1. Spin-coat a support layer on the sample material and perform a baking operation to obtain Sample 1.

[0051] Specifically, spin-coat a layer of LOR glue on the sample material using a spin coater. The rotation speed of the spin coater is set to 500 r / s for 5 s, and then the speed is set to 3500 r / s for 35 s; place the sample on a heating platform and set the temperature to 170 °C. The baking time is 10 minutes. After baking, remove the sample and let it stand for 1 minute.

[0052] S3.2. Spin-coat a photoresist on Sample 1 and perform a baking operation to obtain Sample 2.

[0053] Specifically, continue to spin-coat a layer of S1805 photoresist on the first layer of glue using a spin coater. The rotation speed of the spin coater is set to 500 r / s for 5 s, and then set to 2000 r / s for 25 s; place the sample on another heating platform and set the temperature to 100 °C. The baking time is 10 minutes. After baking, remove the sample and let it stand for 1 minute.

[0054] S3.3. Perform laser direct writing operation on Sample 2 to obtain Sample 3.

[0055] Specifically, import the pre-drawn electrode pattern into the laser direct writing instrument. After selecting the area, execute the exposure command on Sample 2, and use ultraviolet light (UV) to deteriorate the photoresist.

[0056] S3.4. Perform development operation on Sample 3 to obtain Sample 4.

[0057] Specifically, place Sample 3 in AZ300MIF developer for 60 s for development. After completion, rinse the sample with deionized water and dry the moisture on the sample surface with high-purity nitrogen.

[0058] S3.5. Perform magnetron sputtering coating operation on Sample 4 to obtain Sample 5.

[0059] S3.6. Perform degluing operation on Sample 5 to obtain an erbium and ytterbium co-doped WS2(Er-Yb) / Si(P) photodetector.

[0060] Specifically, immerse Sample 5 after sputtering the electrode in acetone for 10 minutes to dissolve the S1805 photoresist, so that the photoresist falls off together with the remaining electrode material. Use AZ300MIF developer to remove the remaining LOR resist for 10 - 20 s. Finally, place the sample in deionized water for cleaning. After completion, use high-purity nitrogen to blow off the moisture on the sample surface to obtain an erbium and ytterbium co-doped WS2(Er-Yb) / Si(P) photodetector.

[0061] Furthermore, the voltage-current curves of the device's response to lasers with wavelengths of 450 nm and 635 nm are as Figure 10 shown. It can be seen from Figure 10 a and b that the device has good responsiveness to light of both wavelengths. Figure 10 c and d in it further show the time-current relationships corresponding to the two wavelengths under a 0 V bias voltage. It can be seen that the dark current of the device is very low, which is beneficial for the device to play a greater role in low-power consumption application scenarios. The responsivities and specific detectivities of the device at 450 nm and 635 nm are as Figure 10 shown in e and f. The device shows responsivities of 50.92 mA / W and 45.65 mA / W, external quantum efficiencies of 14.05% and 8.93%, and specific detectivities of 2.6×10^12 Jones and 1.2×10^12 Jones under the excitation of light of the two wavelengths respectively, indicating that the device has a high responsivity to light of the two frequencies.

[0062] Furthermore, in the WS2(Er-Yb) / Si(P) photodetector based on co-doping of erbium and ytterbium prepared by the present invention, after WS2(Er-Yb) comes into contact with Si(P), there will be a diffusion movement of carriers. When the diffusion movement reaches equilibrium, a built-in electric field will be generated between the two materials. The process of photocurrent generated by photo-generated carriers is the process of self-powered operation. A certain magnitude of external voltage is required to offset the built-in electric field. Therefore, when the voltage is 0V, the current of the WS2(Er-Yb) / Si(P) photodetector based on co-doping of erbium and ytterbium in the present invention does not reach the minimum value as in the case of a conductive device. Due to the self-powered characteristic, the power consumed by the device will reach a relatively low level and it has a high photodetection ability. The self-powered characteristic can further broaden the application scenarios of the WS2(Er-Yb) / Si(P) photodetector based on co-doping of erbium and ytterbium described in the present invention.

[0063] Finally, it should be noted that the above description only presents some embodiments of the present invention. For those skilled in the art, various changes, modifications, substitutions, and variations can be conceived without departing from the principle and spirit of the present invention. The protection scope of the present invention is defined by the appended claims and their equivalents, and all the above actions should be covered within the protection scope of the present invention.

Claims

1. A WS2 (Er-Yb) / Si (P) photodetector based on erbium and ytterbium co-doping, characterized in that: The method for manufacturing the device includes: S1, dividing and cleaning the silicon substrate; wherein the cleaning comprises cleaning the silicon substrate with deionized water, anhydrous ethanol, acetone, and isopropanol in sequence; S2. Prepare erbium and ytterbium co-doped WS2 material on a silicon substrate based on an improved chemical vapor deposition method to obtain a sample material; wherein the raw materials of the erbium and ytterbium co-doped WS2 material include: sublimated sulfur powder, tungsten trioxide powder, erbium chloride powder, ytterbium chloride powder, and sodium chloride powder; S3, using micro-nano processing to make photodetectors based on sample materials; S3.1, spin coating a support layer on the sample material, and performing a baking operation to obtain sample 1; S3.2, spin-coating a photoresist on sample 1, and performing a baking operation to obtain sample 2; S3.3, performing laser direct writing operation on sample 2 to obtain sample 3; S3.4, performing a developing operation on sample 3 to obtain sample 4; S3.5, performing magnetron sputtering coating operation on sample 4 to obtain sample 5; S3.

6. Perform degumming operation on sample 5 to obtain erbium and ytterbium co-doped WS2 (Er-Yb) / Si (P) photodetector.

2. The WS2(Er-Yb) / Si(P) photodetector based on erbium and ytterbium co-doping according to claim 1, characterized in that: The mass ratio of sublimated sulfur powder, tungsten trioxide powder, erbium chloride powder, ytterbium chloride powder and sodium chloride powder is 150:15:1:1:

1.

3. The WS2(Er-Yb) / Si(P) photodetector based on erbium and ytterbium co-doping according to claim 1, characterized in that: The preparation of erbium and ytterbium co-doped WS2 material on a substrate based on an improved chemical vapor deposition method includes: cleaning two quartz boats with anhydrous ethanol; evenly spreading sublimated sulfur powder in the first quartz boat; evenly mixing tungsten trioxide powder, erbium chloride powder, ytterbium chloride powder and sodium chloride powder, taking out a silicon substrate, evenly spreading the mixed powder on the polished surface of the silicon substrate, and placing the silicon substrate on the second quartz boat; taking another silicon substrate, using high-purity nitrogen to blow dry the anhydrous ethanol on the surface of the silicon substrate, and placing the polished surface of the silicon substrate facing down on top of the first silicon substrate; pushing the second quartz boat into the high-temperature zone of the quartz tube in the tubular furnace, and pushing the first quartz boat into the low-temperature zone of the quartz tube in the tubular furnace; performing three vacuum-inflation operations on the tubular furnace; setting a heating program for the tubular furnace, and setting the tubular furnace to heat; after the heating is completed, the air inlet and outlet are closed when the tubular furnace is cooled to room temperature to obtain the sample material.

4. The WS2(Er-Yb) / Si(P) photodetector based on erbium and ytterbium co-doping according to claim 3, characterized in that: The vacuuming-filling operation includes: using a vacuum pump to vacuum the tubular furnace, closing the vacuum pump and opening the air inlet when the gas pressure in the tubular furnace drops to 1 Torr, passing high-purity argon gas into the tubular furnace at a flow rate of 1000 sccm, and closing the air inlet when the gas pressure in the tubular furnace returns to normal pressure; when the gas pressure returns to normal pressure for the last time, adjust the argon flow rate at the air inlet to 50 sccm and open the air outlet.

5. The WS2(Er-Yb) / Si(P) photodetector based on erbium and ytterbium co-doping according to claim 3, characterized in that: During the heating process of the tubular furnace, when the high-temperature area is heated to 850 degrees Celsius, the air inlet is connected to an argon-hydrogen mixture with a flow rate of 80 sccm and a volume ratio of 9:1; after the heating of the tubular furnace is completed, when it is naturally cooled to 500 degrees Celsius, the argon-hydrogen mixture is replaced with argon with a flow rate of 100 sccm.

6. The WS2(Er-Yb) / Si(P) photodetector based on erbium and ytterbium co-doping according to claim 1, characterized in that: The support layer was made of LOR glue, the spin coating speed was set to 500 r / s for 5 s, 3500 r / s for 35 s, the baking temperature was 170 °C, and the baking time was 10 min.

7. The WS2(Er-Yb) / Si(P) photodetector based on erbium and ytterbium co-doping according to claim 1, characterized in that: The photoresist used was S1805 photoresist, the spin coating speed was set to 500 r / s for 5 s, 2000 r / s for 25 s, the baking temperature was 100°C, and the baking time was 10 minutes.

8. The WS2(Er-Yb) / Si(P) photodetector based on erbium and ytterbium co-doping according to claim 1, characterized in that: The development operation includes: placing sample three in AZ300MIF developer for 60 seconds, rinsing the sample with deionized water, and blowing dry the moisture on the surface of the sample with high-purity nitrogen.

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