Magnetic memory device

Abstract

A magnetic memory device includes a conductive line extending in a first direction and a magnetic trace provided on a top surface of the conductive line and extending in the first direction. The magnetic trace includes a domain implanted portion and a line portion extending from the domain implanted portion in a first direction. The domain injection portion has a tapered shape in an opposite direction to the first direction. The conductive line has an upper line width in a second direction, and the first direction and the second direction are parallel to a top surface of the conductive line and are perpendicular to each other. A first line width of the conductive line under the domain injection portion remains constant in an opposite direction to the first direction.

Description

Technical Field

[0001] The present disclosure relates to magnetic storage devices. Background Art

[0002] Due to the growing demand for electronic devices with high speed and / or low power consumption, the storage devices embedded in electronic devices need to have a fast operation speed and / or a low operation voltage. To meet such a demand, magnetic storage devices are being developed. Magnetic storage devices have technical advantages such as reduced latency and / or non-volatility, and are becoming the next-generation storage devices. Recently, novel magnetic domain storage devices that utilize the movement of magnetic domain walls have been studied and developed.

[0003] The magnetic domain storage device has a magnetic trace line including a plurality of magnetic domains, and the movement direction of the magnetic domains in the magnetic trace line changes depending on the direction of a current. A write device provided adjacent to the magnetic trace line is used to write data into the magnetic domains. An additional line that generates a magnetic field or a magnetic tunnel junction device for spin-transfer torque injection can be used as the write device. Summary of the Invention

[0004] Generally, in some aspects, the present disclosure is directed to a magnetic storage device including a magnetic storage device configured to perform a write operation on domains in a magnetic trace line without a write device. The implementation of the magnetic storage device can allow for an easy and stable write operation on the domains in the magnetic trace line.

[0005] According to some aspects, the present disclosure is directed to a magnetic storage device including a conductive wire extending in a first direction and a magnetic trace line provided on a top surface of the conductive wire and extending in the first direction. The magnetic trace line may include a domain injection portion and a line portion extending from the domain injection portion in the first direction. The domain injection portion may have a tapered shape in a direction opposite to the first direction. The conductive wire may have a line width in a second direction, the first direction and the second direction may be parallel to the top surface of the conductive wire and may be perpendicular to each other. The first line width of the conductive wire below the domain injection portion may remain constant in a direction opposite to the first direction.

[0006] According to some aspects, the present disclosure is directed to a magnetic storage device including a conductive wire extending in a first direction and a magnetic trace line provided on a top surface of the conductive wire and extending in the first direction. The magnetic trace line may include a domain injection portion and a line portion extending from the domain injection portion in the first direction. The magnetic trace line may have a width in a second direction, the first direction and the second direction may be parallel to the top surface of the conductive wire and may be perpendicular to each other. The first width of the domain injection portion may decrease as the distance from the line portion increases. The conductive wire may have a line width in the second direction. The first line width of the conductive wire below the domain injection portion may be greater than the first width of the domain injection portion. Brief Description of the Drawings

[0007] The example implementation manners will be more clearly understood from the following detailed description in conjunction with the accompanying drawings.

[0008] Figure 1 is a perspective view schematically showing an example of a magnetic storage device according to some implementation manners.

[0009] Figure 2 shows according to some implementation manners Figure 1 a top view of the magnetic storage device.

[0010] Figure 3 is a cross-sectional view taken along line Figure 2 A-A' according to some implementation manners.

[0011] Figure 4A , Figure 5A , Figure 6A , Figure 7A , Figure 8A and Figure 9A are cross-sectional views taken along line Figure 2 A-A', which show examples of write operations on the magnetic storage device according to some implementation manners.

[0012] Figure 4B shows according to some implementation manners Figure 4A a graph showing an example of a change in the cross-sectional areas of a conductive wire and a magnetic track line.

[0013] Figure 4C shows according to some implementation manners the Figure 4A graph of the current density of the current applied through the conductive wire.

[0014] Figure 5B , Figure 6B , Figure 7B , Figure 8B and Figure 9B are graphs showing examples of the current density of the current applied respectively through Figure 5A , Figure 6A , Figure 7A , Figure 8A and Figure 9A the conductive wires.

[0015] Figure 10 is a cross-sectional view taken along line Figure 2 A-A', which shows an example of a magnetic storage device according to some implementation manners.

[0016] Figure 11 is a cross-sectional view taken along line Figure 2 A-A', which shows an example of a magnetic storage device according to some implementation manners.

[0017] Figure 12Is a top view showing an example of a magnetic storage device according to some implementations.

[0018] Figure 13 Is showing according to some implementations Figure 12 An enlarged view of an example of a portion “R1”.

[0019] Figure 14 Is a top view showing an example of a magnetic storage device according to some implementations.

[0020] Figure 15 Is showing according to some implementations Figure 14 An enlarged view of an example of a portion “R2”.

[0021] Figure 16 Is a top view showing an example of a magnetic storage device according to some implementations.

[0022] Figures 17 to 21 Is a perspective view schematically showing an example of a method of manufacturing a magnetic storage device according to some implementations. Detailed implementation

[0023] Hereinafter, example implementations will be described in detail with reference to the drawings.

[0024] Figure 1 Is a perspective view schematically showing an example of a magnetic storage device according to some implementations. Figure 2 Is showing according to some implementations Figure 1 A top view of a magnetic storage device, Figure 3 Is a cross-sectional view taken along line A-A' according to some implementations Figure 2 of.

[0025] In Figures 1 to 3 the magnetic storage device may include a conductive wire CL, a magnetic trace line MTL on the conductive wire CL, and a reading device 200 on the magnetic trace line MTL. The magnetic trace line MTL may be disposed on the top surface CL_U of the conductive wire CL, and the conductive wire CL and the magnetic trace line MTL may extend in a first direction D1 parallel to the top surface CL_U of the conductive wire CL.

[0026] The magnetic track line MTL may include a domain injection portion P1 and a line portion P2 extending from the domain injection portion P1 in a first direction D1. Magnetic domains having a specific magnetization direction may be injected into the magnetic track line MTL through the domain injection portion P1, and the injected magnetic domains may be stored in the line portion P2 and move through the line portion P2. In some implementations, the magnetic track line MTL may further include an end portion P3 extending from the line portion P2 in the first direction D1. The movement of the magnetic domains may stop in the end portion P3. The domain injection portion P1 and the end portion P3 may be spaced apart from each other in the first direction D1, and the line portion P2 is interposed therebetween. The domain injection portion P1 may be connected to an end of the line portion P2, and the end portion P3 may be connected to an opposite end of the line portion P2. The said end of the line portion P2 and the said opposite end of the line portion P2 may be opposite to each other in the first direction D1. The magnetic track line MTL may include at least one of magnetic elements (e.g., cobalt (Co), iron (Fe), and nickel (Ni)).

[0027] The magnetic track line MTL may have a width in a second direction D2, the second direction D2 being parallel to the top surface CL_U of the conductive line CL and perpendicular to the first direction D1. A first width W1 of the domain injection portion P1 in the second direction D2 may decrease as the distance from the line portion P2 increases. The first width W1 of the domain injection portion P1 may decrease in the opposite direction of the first direction D1. The domain injection portion P1 may have a tapered shape in the opposite direction of the first direction D1. A second width W2 of the line portion P2 in the second direction D2 may remain constant in the first direction D1. The line portion P2 may have a constant width (i.e., the second width W2) between the domain injection portion P1 and the end portion P3. The second width W2 of the line portion P2 may be greater than the first width W1 of the domain injection portion P1. A third width W3 of the end portion P3 in the second direction D2 may increase as the distance from the line portion P2 increases. The third width W3 of the end portion P3 may increase in the first direction D1. The third width W3 of the end portion P3 may be greater than the second width W2 of the line portion P2.

[0028] The line portion P2 of the magnetic trace line MTL may include a plurality of domains DM1 and DM2 arranged in a first direction D1 and a domain wall DW between the domains DM1 and DM2. Each of the domains DM1 and DM2 may be a region placed in the magnetic trace line MTL and having a magnetic moment aligned with a specific direction, and each domain wall DW may be a region where the direction of the magnetic moment changes between the domains DM1 and DM2. The domains DM1 and DM2 and the domain wall DW may be alternately arranged in the first direction D1. The domains DM1 and DM2 may include a first domain DM1 and a second domain DM2 adjacent to each other, and the magnetization direction of the first domain DM1 may be opposite to the magnetization direction of the second domain DM2. Each domain wall DW may define a boundary between the first domain DM1 and the second domain DM2 having magnetization directions opposite to each other.

[0029] The conductive line CL may be configured to generate a spin-orbit torque by a current Ic passing through the conductive line CL. The conductive line CL may be formed of or include a material capable of generating a spin Hall effect or a Rashba effect by a current flowing through the conductive line CL in the first direction D1 (or the opposite direction of the first direction D1). The conductive line CL may include a heavy metal having an atomic number of 30 or higher, and may include at least one of iridium (Ir), ruthenium (Ru), tantalum (Ta), platinum (Pt), palladium (Pd), bismuth (Bi), titanium (Ti), tungsten (W), β-tantalum (β-Ta), and β-tungsten (β-W).

[0030] The conductive line CL may have a line width in a second direction D2. The conductive line CL under the domain injection portion P1 may have a first line width LW1. The first line width LW1 of the conductive line CL may be constant in the first direction D1 (or the opposite direction of the first direction D1). The first line width LW1 of the conductive line CL may be greater than the first width W1 of the domain injection portion P1. The conductive line CL under the line portion P2 may have a second line width LW2. The second line width LW2 of the conductive line CL may be constant in the first direction D1 (or the opposite direction of the first direction D1). The first line width LW1 and the second line width LW2 may be substantially equal to each other. The first line width LW1 and the second line width LW2 may be greater than or equal to the second width W2 of the line portion P2.

[0031] The magnetic trace line MTL may have a thickness Tm in a third direction D3 perpendicular to the top surface CL_U of the conductive line CL. The thickness Tm of the magnetic trace line MTL may be constant in the first direction D1. The thickness Tm of the domain injection portion P1, the thickness Tm of the line portion P2, and the thickness Tm of the end portion P3 may be substantially equal to each other.

[0032] The conductive line CL may have a thickness Tc in the third direction D3, and the thickness Tc of the conductive line CL may be maintained constant in the first direction D1. The thickness Tc of the conductive line CL under the domain injection portion P1 may be equal to the thickness Tc of the conductive line CL under the line portion P2 and may be equal to the thickness Tc of the conductive line CL under the end portion P3.

[0033] The read device 200 may be disposed on the line portion P2 of the magnetic track line MTL. The read device 200 may overlap with a corresponding one of the domains DM1 and DM2 vertically (e.g., in a third direction D3) and may be configured to read out a bit written in the corresponding domain DM1 or DM2. The read device 200 may include a GMR sensor using a giant magnetoresistance effect, a TMR sensor using a tunnel magnetoresistance effect, or an AMR sensor using anisotropic magnetoresistance.

[0034] In an embodiment, the reading device 200 may include a magnetic pattern 220 on the line portion P2 and a non-magnetic pattern 210 between the magnetic pattern 220 and the line portion P2. The magnetic pattern 220 may include at least one of cobalt (Co), iron (Fe), and nickel (Ni). The non-magnetic pattern 210 may include at least one of a non-magnetic metal oxide material (e.g., magnesium oxide, titanium oxide, aluminum oxide, magnesium zinc oxide, or magnesium boron oxide).

[0035] The reading device 200 may overlap with a corresponding one of the domains DM1 and DM2 vertically (e.g., in the third direction D3), and the magnetic pattern 220, the non-magnetic pattern 210, and the corresponding domain DM1 or DM2 may constitute a magnetic tunnel junction. By applying a current flowing in a direction perpendicular to the interface between the magnetic pattern 220 and the non-magnetic pattern 210 to the reading device 200, information about the resistance state (e.g., high resistance state or low resistance state) of the magnetic tunnel junction may be obtained. The information about the resistance state obtained by the reading device 200 may correspond to a bit written in the corresponding domain DM1 or DM2.

[0036] Figure 4A , Figure 5A , Figure 6A , Figure 7A , Figure 8A and Figure 9A is along Figure 2 8 is a cross-sectional view taken along line AA′ of FIG. 1 , which illustrates an example of a write operation on a magnetic memory device according to some implementations. Figure 4B is a diagram showing some implementations Figure 4A A graph showing the variation of the cross-sectional area of ​​an example of a conductive line and a magnetic trace line, Figure 4C is a diagram showing that according to some implementations Figure 4A An example graph of the current density of an electric current applied to a conductive wire.Figure 5B , Figure 6B , Figure 7B , Figure 8B and Figure 9B are graphs respectively showing examples of current density of current applied to conductive wires through Figure 5A , Figure 6A , Figure 7A , Figure 8A and Figure 9A . For simplicity, the reading devices of Figure 4A , Figure 5A , Figure 6A , Figure 7A , Figure 8A and Figure 9A are omitted from Figure 2 .

[0037] In Figure 2 , Figure 4A and Figure 4B , the conductive wire CL and the track line MTL may have cross - sections parallel to the second direction D2 and the third direction D3. Since the conductive wire CL and the track line MTL extend in the first direction D1, the cross - sectional area A of the conductive wire CL and the track line MTL may vary in the first direction D1, as shown in Figure 4B .

[0038] In Figure 4B , the region P0 shows the cross - sectional area A of the conductive wire CL. Referring to the region P0 of Figure 4B , the cross - sectional area A of the conductive wire CL may remain constant in the first direction D1. In Figure 4B , the region P1 shows the domain injection part P1 of the track line MTL and the cross - sectional area A of the conductive wire CL under the domain injection part P1. Referring to the region P1 of Figure 4B , since the first width W1 of the domain injection part P1 increases as the distance from the line part P2 of the track line MTL decreases, the cross - sectional area A of the domain injection part P1 and the conductive wire CL under the domain injection part P1 may increase in the first direction D1. In Figure 4B , the region P2 shows the line part P2 of the track line MTL and the cross - sectional area A of the conductive wire CL under the line part P2. Referring to the region P2 of Figure 4B , since the line part P2 has a constant width (i.e., the second width W2), the cross - sectional area A of the line part P2 and the conductive wire CL under the line part P2 may remain constant in the first direction D1. In Figure 4B , the region P3 shows the end part P3 of the track line MTL and the cross - sectional area A of the conductive wire CL under the end part P3. Referring to Figure 4BIn the region P3, since the third width W3 of the end portion P3 increases as the distance from the line portion P2 increases, the cross-sectional area A of the end portion P3 and the conductive wire CL below the end portion P3 can increase in the first direction D1.

[0039] In Figures 4A to 4C , the current Ic applied to the conductive wire CL can flow through the conductive wire CL and the magnetic trace line MTL, and the current density J of the current Ic can be inversely proportional to the cross-sectional area A of the conductive wire CL and the magnetic trace line MTL. In Figure 4C , the region P0 shows the current density J of the current Ic applied to the conductive wire CL. Referring to Figure 4C of the region P0, the current density J can remain constant in the first direction D1. In Figure 4C , the region P1 shows the current density J of the current Ic flowing through the domain injection portion P1 of the magnetic trace line MTL and the conductive wire CL. As Figure 4B shows, the cross-sectional area A of the domain injection portion P1 and the conductive wire CL below the domain injection portion P1 can increase in the first direction D1. Therefore, referring to Figure 4C of the region P1, the current density J can decrease in the first direction D1. In Figure 4C , the region P2 shows the current density J of the current Ic flowing through the line portion P2 of the magnetic trace line MTL and the conductive wire CL. As Figure 4B shows, the cross-sectional area A of the line portion P2 and the conductive wire CL below the line portion P2 can remain constant in the first direction D1. Therefore, as shown in the region P2 of Figure 4C , the current density J can remain constant in the first direction D1. In Figure 4C , the region P3 shows the current density J of the current Ic flowing through the end portion P3 of the magnetic trace line MTL and the conductive wire CL. As Figure 4B shows, the cross-sectional area A of the end portion P3 and the conductive wire CL below the end portion P3 can increase in the first direction D1. Therefore, as shown in the region P3 of Figure 4C , the current density J can decrease in the first direction D1.

[0040] In Figure 5A and Figure 5BIn [the situation], a first current Ic1 can be applied to the conductive wire CL, and the current density J of the first current Ic1 can be greater than the critical current density Jnucl required for domain formation (i.e., J > Jnucl). The current density J of the first current Ic1 can be greater than the critical current density Jnucl at the end portion of the domain injection portion P1 of the magnetic track MTL, and it can decrease to less than the critical current density Jnucl as the distance from the line portion P2 of the magnetic track MTL in the first direction D1 decreases. Thus, a first domain DM1 having the same or aligned magnetization direction can be formed at the end portion of the domain injection portion P1 of the magnetic track MTL.

[0041] In Figure 6A and Figure 6B [the situation], a second current Ic2 can be applied to the conductive wire CL, and the current density J of the second current Ic2 can be less than the critical current density Jnucl for domain formation and can be greater than the threshold current density Jth for domain movement (i.e., Jth < J < Jnucl). Thus, the first domain DM1 can move in the first direction D1 without domain formation in the domain injection portion P1 of the magnetic track MTL.

[0042] In Figure 7A and Figure 7B [the situation], the first current Ic1 can be applied to the conductive wire CL again. The current density J of the first current Ic1 can be greater than the critical current density Jnucl at the end portion of the domain injection portion P1 of the magnetic track MTL, and it can decrease to less than the critical current density Jnucl as the distance from the line portion P2 of the magnetic track MTL in the first direction D1 decreases. Thus, a second domain DM2 having the same or aligned magnetization direction can be formed at the end portion of the domain injection portion P1 of the magnetic track MTL. The magnetization direction of the second domain DM2 can be a direction opposite to the magnetization direction of the first domain DM1. A domain wall DW can be formed between the first domain DM1 and the second domain DM2.

[0043] In Figure 8A and Figure 8B [the situation], the second current Ic2 can be applied to the conductive wire CL again. Thus, the first domain DM1 and the second domain DM2 can move in the first direction D1 without domain formation at the domain injection portion P1 of the magnetic track MTL.

[0044] In Figure 9A and Figure 9BIn [the above situation], a first current Ic1 can be applied to the conductive wire CL again. The current density J of the first current Ic1 can be greater than the critical current density Jnucl at the end portion of the domain injection portion P1 of the magnetic trace line MTL, and can decrease to less than the critical current density Jnucl as the distance from the line portion P2 of the magnetic trace line MTL in the first direction D1 decreases. Therefore, an additional first domain DM1 having the same or aligned magnetization direction can be formed at the end portion of the domain injection portion P1 of the magnetic trace line MTL. The magnetization direction of the additional first domain DM1 can be opposite to the magnetization direction of the second domain DM2, and can be the same as the magnetization direction of the first domain DM1. An additional domain wall DW can be formed between the additional first domain DM1 and the second domain DM2.

[0045] The first current Ic1 can be a write current for forming domains in the domain injection portion P1 of the magnetic trace line MTL, and the second current Ic2 can be a moving current for moving domains in the magnetic trace line MTL. Since the first current Ic1 and the second current Ic2 are alternately applied to the conductive wire CL, the first domain DM1 and the second domain DM2 can be formed in the domain injection portion P1 of the magnetic trace line MTL and can move to the line portion P2 of the magnetic trace line MTL.

[0046] In Figure 3 [the above situation], the first domain DM1 and the second domain DM2 can be stored in the line portion P2 of the magnetic trace line MTL. When the second current Ic2 is applied to the conductive wire CL, the first domain DM1 and the second domain DM2 in the line portion P2 can move toward the end portion P3. In the end portion P3 of the magnetic trace line MTL, the current density J can decrease to less than the threshold current density (Jth), as shown in Figure 5B Figure 6B Figure 7B Figure 8B and Figure 9B [the above references]. Therefore, the movement of the first domain DM1 and the second domain DM2 can stop in the end portion P3 of the magnetic trace line MTL. In this case, by continuously applying the second current Ic2 to the conductive wire CL, the first domain DM1 and the second domain DM2 in the magnetic trace line MTL can have the same magnetization direction. This operation can be used as an erase operation for a magnetic storage device according to an embodiment of the inventive concept.

[0047] According to some implementations, the track line MTL may include a domain injection portion P1 having a tapered shape in a direction opposite to a first direction D1 and a line portion P2 extending from the domain injection portion P1 in the first direction D1. Accordingly, a cross-sectional area A of the domain injection portion P1 and a conductive line CL below the domain injection portion P1 may increase as a distance from the line portion P2 of the track line MTL decreases (i.e., in the first direction D1). If a first current Ic1 having a current density greater than a critical current density Jnucl is applied to the conductive line CL, a current density J of the first current Ic1 may be greater than the critical current density Jnucl at an end portion of the domain injection portion P1, and may decrease to be less than the critical current density Jnucl as the distance from the line portion P2 of the track line MTL decreases (e.g., in the first direction D1). Accordingly, domains having the same or aligned magnetization directions may be formed at the end portion of the domain injection portion P1 of the track line MTL.

[0048] According to some implementations, domain formation (i.e., a write operation) in the track line MTL may be performed by repeatedly applying the first current Ic1 to the conductive line CL without any additional conductive lines or any write devices for domain formation. Accordingly, a write operation for forming domains in the track line MTL may be possible without additional conductive lines or write devices, and a magnetic storage device may be configured to allow an easy and stable write operation for forming domains in the track line MTL.

[0049] Figure 10 is a cross-sectional view taken along line A-A' of Figure 2 which shows an example of a magnetic storage device according to some implementations. For simplicity, elements identical to those in the magnetic storage device described with reference to Figures 1 to 3 may be identified by the same reference numerals without overlapping descriptions repeated.

[0050] In Figure 10 the track line MTL may have perpendicular magnetic anisotropy. Each of the domains DM1 and DM2 may have a magnetization direction MDf perpendicular to an interface between the conductive line CL and the track line MTL. The domains DM1 and DM2 may include a first domain DM1 and a second domain DM2 adjacent to each other, where a magnetization direction MDf of the first domain DM1 may be opposite to a magnetization direction MDf of the second domain DM2.

[0051] The magnetic pattern 220 may have perpendicular magnetic anisotropy (PMA). The magnetic pattern 220 may have a magnetization direction MDp perpendicular to the interface between the magnetic pattern 220 and the non-magnetic pattern 210, and the magnetization direction MDp of the magnetic pattern 220 may be fixed to a specific direction. The magnetic pattern 220, the non-magnetic pattern 210, and the corresponding domains DM1 or DM2 may form a magnetic tunnel junction, and the non-magnetic pattern 210 may be referred to as a tunnel barrier pattern.

[0052] The magnetic track MTL and the magnetic pattern 220 may include at least one of i) perpendicular magnetic materials (e.g., CoFeTb, CoFeGd, and CoFeDy), ii) perpendicular magnetic materials having an L10 structure, iii) CoPt-based materials having a hexagonal close-packed structure, and iv) perpendicular magnetic structures. The perpendicular magnetic material having an L10 structure may include at least one of L10 FePt, L10 FePd, L10 CoPd, and L10 CoPt. The perpendicular magnetic structure may include alternately and repeatedly stacked magnetic layers and non-magnetic layers. For example, the perpendicular magnetic structure may include at least one of (Co / Pt)n, (CoFe / Pt)n, (CoFe / Pd)n, (Co / Pd)n, (Co / Ni)n, (CoNi / Pt)n, (CoCr / Pt)n, and (CoCr / Pd)n, where n is the number of pairs of stacked layers. The magnetic track MTL and the magnetic pattern 220 may be formed of or include at least one of CoFeB and Co-based Heusler alloys.

[0053] Figure 11 is a cross-sectional view taken along line A-A' of Figure 2 which shows an example of a magnetic storage device according to some implementations. For simplicity, elements that are the same as those in the magnetic storage device described with reference to Figures 1 to 3 may be identified by the same reference numerals without repeating overlapping descriptions.

[0054] In Figure 11 the magnetic track MTL may have in-plane magnetic anisotropy (IMA). Each of the domains DM1 and DM2 may have a magnetization direction MDf that is parallel to the interface between the conductive line CL and the magnetic track MTL. The domains DM1 and DM2 may include a first domain DM1 and a second domain DM2 adjacent to each other, where the magnetization direction MDf of the first domain DM1 may be opposite to the magnetization direction MDf of the second domain DM2.

[0055] The magnetic pattern 220 may have in-plane magnetic anisotropy (IMA). The magnetic pattern 220 may have a magnetization direction MDp parallel to the interface between the magnetic pattern 220 and the non-magnetic pattern 210, and the magnetization direction MDp of the magnetic pattern 220 may be fixed to a specific direction. The magnetic pattern 220, the non-magnetic pattern 210, and the corresponding domains DM1 or DM2 may form a magnetic tunnel junction, and the non-magnetic pattern 210 may be referred to as a tunnel barrier pattern.

[0056] The magnetic trace line MTL and the magnetic pattern 220 may each include a ferromagnetic material, and the magnetic pattern 220 may further include an antiferromagnetic material for fixing the magnetization direction of the ferromagnetic material.

[0057] Figure 12 is a top view showing an example of a magnetic storage device according to some implementations, Figure 13 is a view showing according to some implementations Figure 12 An enlarged view of an example of a portion "R1". For simplicity, the features different from the magnetic storage device described with reference to Figures 1 to 3 will be mainly described below.

[0058] In Figure 12 and Figure 13 The line portion P2 of the magnetic trace line MTL may have a first side surface S1 and a second side surface S2 facing each other in a second direction D2. The first side surface S1 may include a first recessed region NR1 that recesses from the first side surface S1 into the line portion P2 and is spaced apart from each other in a first direction D1. The second side surface S2 may include a second recessed region NR2 that recesses from the second side surface S2 into the line portion P2 and is spaced apart from each other in the first direction D1.

[0059] The second recessed region NR2 may be aligned with the first recessed region NR1 in the second direction D2, respectively. Since the first side surface S1 and the second side surface S2 of the line portion P2 include the first recessed region NR1 and the second recessed region NR2, the current density of the current applied to move the domains DM1 and DM2 in the magnetic trace line MTL can be more precisely controlled, and this makes it possible to easily control the positions of the domains DM1 and DM2 in the magnetic trace line MTL.

[0060] Figure 14 is a top view showing an example of a magnetic storage device according to some implementations, Figure 15 is a view showing according to some implementations Figure 14 An enlarged view of an example of a portion "R2". For simplicity, the features different from the magnetic storage device described with reference to Figures 1 to 3 will be mainly described below.

[0061] In Figure 14 andFigure 15 In Figure 15 , a wire portion P2 of a magnetic track line MTL may have a first side surface S1 and a second side surface S2 that face each other in a second direction D2. The first side surface S1 may include first protruding portions PP1 that extend from the first side surface S1 toward the outside of the wire portion P2 and are spaced apart from each other in a first direction D1. In some implementations, each first protruding portion PP1 may protrude from the first side surface S1 in the second direction D2. The second side surface S2 may include second protruding portions PP2 that extend from the second side surface S2 toward the outside of the wire portion P2 and are spaced apart from each other in the first direction D1. In some implementations, each second protruding portion PP2 may protrude from the second side surface S2 in a direction opposite to the second direction D2.

[0062] The second protruding portions PP2 may be respectively aligned with the first protruding portions PP1 in the second direction D2. Since the first side surface S1 and the second side surface S2 of the wire portion P2 include the first protruding portions PP1 and the second protruding portions PP2, the current density of the current applied to move domains DM1 and DM2 in the magnetic track line MTL can be more precisely controlled, and this enables easy control of the positions of the domains DM1 and DM2 in the magnetic track line MTL.

[0063] Figure 16 is a top view showing an example of a magnetic storage device according to some implementations. For simplicity, features different from the magnetic storage device described with reference to Figures 1 to 3 will be mainly described below.

[0064] In Figure 16 In Figure 16 , a conductive wire CL may have a third side surface S3 and a fourth side surface S4 that face each other in a second direction D2. Below the wire portion P2 of the magnetic track line MTL, the third side surface S3 may include third protruding portions PP3 that extend from the third side surface S3 toward the outside of the conductive wire CL and are spaced apart from each other in a first direction D1. In some implementations, each third protruding portion PP3 may protrude from the third side surface S3 in the second direction D2. Below the wire portion P2 of the magnetic track line MTL, the fourth side surface S4 may include fourth protruding portions PP4 that extend from the fourth side surface S4 toward the outside of the conductive wire CL and are spaced apart from each other in the first direction D1. In some implementations, each fourth protruding portion PP4 may protrude from the fourth side surface S4 in a direction opposite to the second direction D2.

[0065] The fourth protruding portion PP4 can be aligned with the third protruding portion PP3 in the second direction D2, respectively. Since the third side surface S3 and the fourth side surface S4 of the conductive line CL include the third protruding portion PP3 and the fourth protruding portion PP4, the current density of the current applied to move the domains DM1 and DM2 in the magnetic track MTL can be controlled more precisely, and this enables the positions of the domains DM1 and DM2 in the magnetic track MTL to be easily controlled.

[0066] Figures 17 to 21 is a perspective view schematically showing an example of a method of manufacturing a magnetic storage device according to some implementations. For simplicity, elements identical to those in the magnetic storage device described with reference to Figures 1 to 3 may be identified by the same reference numerals without repeating the overlapping description.

[0067] In Figure 17 a conductive layer 110 and a magnetic layer 120 may be sequentially stacked on a substrate 100. The substrate 100 may be a semiconductor substrate (e.g., a silicon substrate, a germanium substrate, or a silicon-germanium substrate). A first mask pattern M1 may be formed on the magnetic layer 120. The first mask pattern M1 may define the planar shape of the magnetic track MTL described with reference to Figure 2 , Figure 12 , Figure 14 and Figure 16 . In an embodiment, the first mask pattern M1 may be a photoresist pattern.

[0068] In Figure 18 the magnetic layer 120 may be etched using the first mask pattern M1 as an etching mask, and as a result, the magnetic track MTL may be formed. The magnetic track MTL may have substantially the same characteristics as the magnetic track MTL described with reference to Figures 1 to 16 .

[0069] In Figure 19 after the magnetic track MTL is formed, the first mask pattern M1 may be removed. In some implementations, the first mask pattern M1 may be removed by an ashing and / or stripping process.

[0070] A second mask pattern M2 may be formed on the conductive layer 110 to cover the magnetic track MTL. The second mask pattern M2 may define the planar shape of the conductive line CL described with reference to Figure 2 , Figure 12 , Figure 14 and Figure 16 . In some implementations, the second mask pattern M2 may be a photoresist pattern.

[0071] In Figure 20In [reference], the second mask pattern M2 can be used as an etch mask to etch the conductive layer 110 to form the conductive line CL. The conductive line CL can be formed to have substantially the same features as the conductive line CL described with reference to Figures 1 to 16 The conductive line CL described above.

[0072] In Figure 21 After forming the conductive line CL, the second mask pattern M2 can be removed. In some implementations, the second mask pattern M2 can be removed by an ashing and / or stripping process.

[0073] The magnetic storage device manufactured by the above method can have the same structure as that described with reference to Figures 1 to 16 The same structure described above.

[0074] According to some implementations, the magnetic track can include a domain injection portion and a line portion extending from the domain injection portion in a first direction, and the domain injection portion can have a tapered shape in the opposite direction of the first direction. Thus, the cross-sectional area of the domain injection portion can increase as the distance from the line portion of the magnetic track decreases (i.e., in the first direction). When a current flows through the magnetic track, the current density (J) of the current can be greater than the critical current density (Jnucl) required to form domains at the end portion of the domain injection portion, and can decrease to a value less than the critical current density (Jnucl) as the distance from the line portion of the magnetic track decreases (i.e., in the first direction). Therefore, domains having the same or aligned magnetization directions can be stably formed at the end portion of the domain injection portion of the magnetic track, and thus, no additional conductive lines or writing devices are required to form domains in the magnetic track (i.e., for a write operation).

[0075] As a result, a write operation for forming domains in the magnetic track without additional conductive lines or writing devices can be possible, and the magnetic storage device can be configured to allow an easy and stable write operation for forming domains in the magnetic track.

[0076] Although the present disclosure contains many specific implementation details, these details should not be construed as limitations on the scope that can be claimed. Certain features described in the context of separate implementations in the present disclosure can also be implemented combinatorially in a single implementation. Conversely, the various features described in the context of a single implementation can also be implemented separately in multiple implementations or in any suitable sub-combination. Additionally, although the features may be described above as acting in certain combinations, in some cases, one or more features from the combination can be deleted from the combination, and the combination can be directed to a sub-combination or a variant of the sub-combination.

[0077] This application claims the benefit of Korean Patent Application No. 10-2023-0187935, filed with the Korean Intellectual Property Office on December 21, 2023, the entire contents of which are incorporated herein by reference.

Claims

1. A magnetic storage device, comprising: A conductive line extending in a first direction; as well as a magnetic trace provided on a top surface of the conductive wire and extending in the first direction, wherein the magnetic track line comprises a domain injection portion and a line portion extending from the domain injection portion in the first direction, the domain injection portion has a tapered shape in a direction opposite to the first direction, The conductive line has a line width in a second direction, The first direction and the second direction are parallel to the top surface of the conductive line and perpendicular to each other, and A first line width of the conductive line below the domain injection portion is maintained constant in the direction opposite to the first direction.

2. The magnetic memory device according to claim 1, wherein the domain injection portion has a first width in the second direction, and The first width decreases in the direction opposite to the first direction. 3 . The magnetic memory device of claim 2 , wherein the first line width of the conductive line is greater than the first width of the domain injection portion.

4. The magnetic memory device according to claim 2, wherein the line portion has a second width in the second direction, and The second width of the line portion is greater than the first width of the domain injection portion.

5. The magnetic memory device according to claim 4, wherein the magnetic track line further comprises an end portion extending from the line portion in the first direction, The end portion has a third width in the second direction, and The third width of the end portion increases in the first direction. 6 . The magnetic memory device of claim 1 , wherein a second line width of the conductive line below the line portion is equal to the first line width of the conductive line.

7. The magnetic memory device according to claim 1, wherein the magnetic trace line has a thickness in a third direction perpendicular to the top surface of the conductive line, and The thickness of the domain injection portion is equal to the thickness of the line portion.

8. The magnetic memory device according to claim 7, wherein the conductive line has a thickness in the third direction, and A thickness of the conductive line under the domain injection portion is equal to a thickness of the conductive line under the line portion. 9 . The magnetic memory device according to claim 1 , wherein the conductive line is configured to generate a spin-orbit torque by a current passing through the conductive line. 10 . The magnetic memory device of claim 1 , wherein the magnetic trace line includes a plurality of domains arranged in the first direction.

11. The magnetic memory device according to claim 10, further comprising a magnetic pattern disposed on the line portion of the magnetic trace line and a non-magnetic pattern between the line portion and the magnetic pattern, The magnetic pattern and the non-magnetic pattern together with corresponding domains in the domains constitute a magnetic tunnel junction.

12. The magnetic memory device according to claim 1, wherein the line portions of the magnetic track line have side surfaces facing each other in the second direction, Each of the side surfaces of the line portion includes a recessed area recessed into the line portion, and The recessed areas are spaced apart from each other in the first direction.

13. The magnetic memory device according to claim 1, wherein the line portions of the magnetic track line have side surfaces facing each other in the second direction, Each of the side surfaces of the line portion includes a protruding portion protruding from the line portion, and The protruding portions are spaced apart from each other in the first direction.

14. The magnetic memory device according to claim 1, wherein the conductive lines have side surfaces facing each other in the second direction, Each of the side surfaces of the conductive line includes a protruding portion protruding from the conductive line, and The protruding portions are spaced apart from each other in the first direction.

15. A magnetic storage device comprising: A conductive line extending in a first direction; as well as a magnetic trace provided on a top surface of the conductive wire and extending in the first direction, wherein the magnetic track line comprises a domain injection portion and a line portion extending from the domain injection portion in the first direction, The magnetic trace line has a width in a second direction, The first direction and the second direction are parallel to the top surface of the conductive line and perpendicular to each other, The first width of the domain injection portion decreases as the distance from the line portion increases, The conductive line has a line width in the second direction, and A first line width of the conductive line under the domain injection portion is greater than the first width of the domain injection portion. 16 . The magnetic memory device of claim 15 , wherein a second width of the line portion is greater than the first width of the domain injection portion. 17 . The magnetic memory device of claim 16 , wherein a second line width of the conductive line below the line portion is equal to the first line width of the conductive line. 18 . The magnetic memory device of claim 15 , wherein the magnetic trace line includes a plurality of domains arranged in the first direction and domain walls formed between the domains. 19 . The magnetic memory device of claim 18 , wherein the conductive line is configured to generate a spin-orbit torque by a current passing through the conductive line.

20. The magnetic memory device according to claim 19, further comprising a magnetic pattern on the line portion of the magnetic trace line and a non-magnetic pattern between the line portion and the magnetic pattern, The magnetic pattern and the non-magnetic pattern together with corresponding domains in the domains constitute a magnetic tunnel junction.

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