Multi-wavelength pyrometer for chamber monitoring

Abstract

The present disclosure relates to methods, systems, and apparatus for monitoring temperatures at multiple sites within a substrate processing chamber. A system for processing a substrate includes: a processing chamber including a processing volume; a first window at a first periphery of the processing space; a substrate support member, wherein the substrate support member is arranged in the processing space; and a first multi-wavelength pyrometer configured to measure: a first temperature at a first site proximate the first window; and a second temperature at a second site proximate the substrate support.

Description

Background Art

[0001] Field

[0002] Embodiments of the present disclosure generally relate to methods and apparatus for monitoring temperature at multiple sites within a processing chamber. More specifically, the present application relates to non-contact methods for monitoring temperature at multiple sites within a semiconductor processing chamber.

[0003] Description of Related Art

[0004] Semiconductor substrates are processed for a variety of applications, including the fabrication of integrated and micro-devices. During processing, the substrate is positioned on a substrate support within the processing chamber. The substrate support is supported by a support shaft that is rotatable about a central axis. Precise control of heating sources, such as multiple heating lamps disposed below and above the substrate, allows the substrate to be heated within very tight tolerances. The temperature of the substrate can affect the uniformity of the material deposited on the substrate.

[0005] Over time, aging of the heating sources and the buildup of films on surfaces within the processing chamber (e.g., windows) reduce the accuracy and precision of heating within the processing chamber. When the processing efficiency degrades over time, buildup may be suspected. In response to efficiency degradation or during preventive maintenance, the processing chamber can be manually inspected to identify buildup on various surfaces. Manually inspecting the processing chamber results in extended downtime of the processing chamber. Extended downtime results in reduced production volume and increased cost of ownership. Inspection methods also typically utilize substrates or additional equipment that are removed from the processing chamber after the inspection is performed. The additional test substrates and / or equipment further increase the cost of ownership.

[0006] Accordingly, there is a need for improved apparatus and methods for monitoring temperature within a processing chamber. Summary of the Invention

[0007] The present disclosure generally relates to methods and apparatus for monitoring temperature at multiple sites within a processing chamber.

[0008] In one or more embodiments, a system for processing a substrate is provided, and the system includes a processing chamber that includes a processing space; a first window at a first perimeter of the processing space; a substrate support within the processing space; and a first multi-wavelength pyrometer configured to measure: a first temperature at a first site proximate the first window, and a second temperature at a second site proximate the substrate support.

[0009] In other embodiments, a method of monitoring a processing chamber is provided, and the method includes: measuring a first temperature at a first site within the processing chamber with a first multi-wavelength pyrometer, where the first site is close to a first window at a first perimeter of a processing space of the processing chamber; while measuring the first temperature, measuring a second temperature at a second site within the processing chamber with the first multi-wavelength pyrometer, where the second site is close to a substrate support within the processing space; after measuring the first temperature, measuring a third temperature at the first site with the first multi-wavelength pyrometer; while measuring the third temperature, measuring a fourth temperature at the second site with the first multi-wavelength pyrometer; assessing an operating state of the processing chamber based on the first temperature, the second temperature, the third temperature, and the fourth temperature; and based on the assessment of the operating state, performing at least one of the following actions: causing a change in an environment of the processing chamber; and generating an alarm.

[0010] In some embodiments, a system for processing a substrate is provided, and the system includes a processing chamber that includes: a processing space; a first window at a first perimeter of the processing space; a second window at a second perimeter of the processing space; a substrate support within the processing space; a first multi-wavelength pyrometer configured to measure: a first temperature at a first site close to the first window; and a second temperature at a second site close to the substrate support; a second multi-wavelength pyrometer configured to measure: a third temperature at a third site close to the first window; and a fourth temperature at a fourth site close to the substrate support; a third multi-wavelength pyrometer configured to measure: a fifth temperature at a fifth site close to the second window; and a sixth temperature at a sixth site close to the substrate support, where: the first window includes quartz, the second window includes quartz, the substrate support includes silicon, the first site, the third site, and the fifth site are different from each other, and the second site, the fourth site, and the sixth site are different from each other. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] To enable a more particular understanding of the above-described features of the present disclosure, reference may be made to the embodiments in which some embodiments of the present disclosure are illustrated in the accompanying drawings. However, it should be noted that the drawings only illustrate exemplary embodiments and should not be considered as limiting the scope thereof, as the present disclosure may admit other equally effective embodiments.

[0012] Figure 1 is a schematic diagram of a deposition chamber according to one or more embodiments of the present disclosure.

[0013] Figure 2 shows a simplified enlarged portion of a deposition chamber from Figure 1 .

[0014] Figure 3 shows a schematic cross-sectional view of a portion of a substrate support according to one or more embodiments.

[0015] FIG. 4 is a graph showing an exemplary temperature profile.

[0016] Figure 5 is a block diagram of a method for monitoring a processing chamber with a multi-wavelength pyrometer according to one or more embodiments.

[0017] For purposes of facilitating understanding, where possible, the same reference numerals are used to denote elements common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated into other embodiments without further recitation. DETAILED DESCRIPTION

[0018] The present disclosure generally relates to methods and apparatus for monitoring temperature at multiple sites within a processing chamber. More specifically, the method relates to multi-wavelength pyrometry for monitoring and / or controlling a semiconductor processing chamber for epitaxial deposition, although use in other chambers is also contemplated. The method utilizes a multi-wavelength pyrometer to simultaneously measure temperature at at least two different sites. Utilizing a multi-wavelength pyrometer to determine at least two temperature measurements enables improved efficiency and / or accuracy of temperature measurement because the effects of variables such as coating formation on the window, substrate support aging, or pyrometer drift are reduced or eliminated. For example, the efficiency and / or accuracy of temperature measurement can be improved by calculating the difference between two pyrometer readings at different wavelengths and identifying the direction of change.

[0019] In some embodiments, the multi-wavelength pyrometer can simultaneously measure two different wavelengths (or wavelength ranges). Multi-wavelength pyrometry can measure the infrared energy at two different wavelengths and determine the ratio between the two measurements, rather than determining temperature by measuring the intensity of the emitted infrared energy as is typically done. The ratio is then used to determine temperature. As the ratio changes, the temperature also changes. This can be advantageous, for example, when residues build up on the window between the temperature measurement site and the pyrometer. The interference from the residues can equally affect both wavelengths and is thus effectively canceled out. As the window becomes dirtier, the multi-wavelength pyrometer can continue to accurately measure temperature. It should be understood that any two measurements from a set of measurements obtained by the multi-wavelength pyrometer can be selected to determine the ratio.

[0020] Figure 1FIG. 0 is a schematic view of a class of processing chambers 100 in accordance with one or more embodiments of the present disclosure. The processing chamber 100 is a semiconductor processing chamber and may be a deposition chamber. The processing chamber 100 as described herein is used to grow an epitaxial film on a substrate (not shown). The processing chamber 100 creates a cross-flow of precursors on the top surface of the substrate.

[0021] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form a chamber body. A substrate support 106 is disposed within the chamber body and has a top surface 171 and a bottom surface 172. The substrate support 106 may be formed of a silicon material (e.g., graphite coated with silicon carbide). Also disposed within the chamber body are an upper window 108 (e.g., a dome-shaped window), a lower window 110 (e.g., an inverted dome-shaped window), a plurality of upper lamps 141, and a plurality of lower lamps 143. The upper window 108 may have a top surface 101 and a bottom surface 102. The upper window 108 and the lower window 110 are formed of a material that is absorptive at certain wavelengths of radiation and transmissive at other wavelengths. For example, the upper window 108 and the lower window 110 may be formed of quartz, which is absorptive in a wavelength range greater than about 4800 nm and transmissive at wavelengths from about 150 nm to about 4800 nm for typical chamber operating temperatures and pressures, depending on the selected quartz material. In some embodiments, the upper window 108 and the lower window 110 may be formed of a material that is transmissive at certain wavelengths at which the substrate support 106 may be absorptive (e.g., a wavelength range from about 150 nm to about 15,000 nm for typical chamber operating temperatures and pressures).

[0022] The substrate support 106 is disposed between the upper window 108 and the lower window 110. A plurality of upper lamps 141 are disposed between the upper window 108 and the cover 154. The cover 154 includes two multi-wavelength pyrometers 153, 155 disposed therein for measuring one or more temperatures within the processing chamber 100. A plurality of lower lamps 143 are disposed between the lower window 110 and the bottom plate 152. The multi-wavelength pyrometer 149 is disposed through the bottom plate 152 for measuring one or more temperatures within the processing chamber 100. In some embodiments, the processing chamber 100 includes only one of the three multi-wavelength pyrometers 149, 153, 155 shown. In some embodiments, the processing chamber 100 includes any two of the three multi-wavelength pyrometers 149, 153, 155 shown. In some embodiments, in addition to the multi-wavelength pyrometers 149, 153, 155 shown, the processing chamber 100 may also include additional multi-wavelength pyrometers. In some embodiments, the processing chamber 100 may include multi-wavelength pyrometers disposed at different locations and / or having different orientations from the multi-wavelength pyrometers 149, 153, 155 shown.

[0023] A processing space 136 is formed between the upper window 108 and the lower window 110. The processing space 136 has a substrate support 106 disposed therein. The substrate support 106 is attached to the shaft 118. The shaft is connected to the motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that provide movement and / or adjustment of the shaft 118 and / or the substrate support 106 within the processing space 136. The motion assembly 121 includes a rotational actuator 122 that rotates the shaft 118 and / or the substrate support 106 about the longitudinal axis A of the processing chamber 100. The motion assembly 121 further includes a vertical actuator 124 for raising and lowering the substrate support 106 in the z direction. The motion assembly includes a tilt adjustment device 126 and a lateral adjustment device 128, the tilt adjustment device for adjusting the planar orientation of the substrate support 106, and the lateral adjustment device for adjusting the position of the shaft 118 and the substrate support 106 side-to-side within the processing space 136.

[0024] The substrate support 106 may include lift rod holes 107 disposed therein. The lift rod holes 107 are sized to accommodate lift rods 132 for lifting and lowering a substrate from the substrate support 106 before or after performing a deposition process. When the substrate support 106 is lowered from the processing position to the transfer position, the lift rods 132 may rest on the lift rod stops 134.

[0025] The mass sensor 160 is optionally coupled to the shaft 118 of the substrate support 106. The mass sensor 160 is configured to measure the mass and / or weight of the substrate support 106 and / or the thickness of a coating on the substrate support 106. The mass sensor 160 can be a strain gauge or a piezoelectric sensor. The strain gauge can be an optical strain gauge or an electrical strain gauge. The mass sensor 160 is disposed below the shaft 118 such that at least a portion of the mass of the substrate support 106 is supported by the mass sensor 160. The mass sensor 160 is disposed below a bearing, such as a ball bearing assembly. The ball bearing assembly is configured to support at least a portion of the weight of the substrate support 106 and is disposed between the mass sensor 160 and the shaft 118 of the substrate support 106.

[0026] The flow module 112 includes a plurality of process gas inlets 114, a plurality of purge gas inlets 164, and one or more exhaust outlets 116. The plurality of process gas inlets 114 and the plurality of purge gas inlets 164 are disposed on a side of the flow module 112 opposite the one or more exhaust outlets 116. One or more flow guides 146 are disposed below the plurality of process gas inlets 114 and the one or more exhaust outlets 116. The flow guide 146 is disposed above the purge gas inlets 164. A gasket 163 is disposed on the inner surface of the flow module 112 and protects the flow module 112 from reactive gases used during the deposition process. The process gas inlets 114 and the purge gas inlets 164 are positioned to direct the gases to flow parallel to the top surface of a substrate (not shown) disposed within the process space 136. The process gas inlets 114 are fluidly connected to a process gas source 151. The purge gas inlets 164 are fluidly connected to a purge gas source 162. Each of the one or more exhaust outlets 116 is fluidly connected to an exhaust pump 157. Each of the process gas source 151 and the purge gas source 162 can be configured to supply one or more precursors or process gases into the process space 136.

[0027] As shown, controller 120 communicates with processing chamber 100 and is used to control processes, such as those described herein. Controller 120 includes a central processing unit (CPU) 159, a memory component 135, and support circuitry 158. Controller 120 can directly control processing chamber 100 or control the processing chamber via other computers or controllers (not shown) associated with specific support system components. Controller 120 can be a general computer processor of any form that can be used in an industrial environment to control various chambers and sub-processors. Memory 135 or the computer-readable medium can be one or more of the readily available memories, such as random access memory (RAM), read only memory (ROM), floppy disks, hard disks, flash drives, or any other form of digital storage device, local or remote. Support circuitry 158 is coupled to CPU 159 to support the processor in a conventional manner. Support circuitry 158 includes a cache, power supply, clock circuit, input / output circuitry system, and subsystems, etc. Processing steps can be stored in memory 135 as software routines that can be executed or called to transform controller 120 into a dedicated controller to control the operation of processing chamber 100. Controller 120 can be configured to execute any method described herein. Controller 120 can be adapted to monitor, set, adjust, and / or change the input power (e.g., as measured by voltage) delivered to lamps 141, 143, thereby controlling the radial distribution of radiant energy. Similarly, controller 120 can modify the set point of the input power delivered to lamps 141, 143. Controller 120 can be adapted to generate an alarm based on data collected by various components of processing chamber 100.

[0028] Figure 2 A simplified enlarged portion of a schematic diagram of processing chamber 100 from Figure 1 is shown. As previously described, processing chamber 100 includes an upper window 108 and a lower window 110. A processing space 136 is formed between upper window 108 and lower window 110. The processing space 136 has a substrate support 106 disposed therein. Substrate support 106 has a top surface 171 and a bottom surface 172.

[0029] Figure 2 Also shown are a plurality of temperature measurement sites 249-Q, 249-S, 253-Q, 253-S, 255-Q, 255-S. For example, in an embodiment, the multi-wavelength pyrometer 149 ( Figure 1) is adapted to measure the temperature at site 249-Q (e.g., at the peripheral region of the lower window 110) and at site 249-S (e.g., at the peripheral region of the bottom surface 172 of the substrate support 106). Similarly, in an embodiment, the multi-wavelength pyrometer 153( Figure 1 ) is adapted to measure the temperature at site 253-Q (e.g., at the peripheral region of the upper window 108) and at site 253-S (e.g., at the peripheral region of the top surface 171 of the substrate support 106). Similarly, in an embodiment, the multi-wavelength pyrometer 155( Figure 1 ) is adapted to measure the temperature at site 255-Q (e.g., at the central region of the upper window 108) and at site 255-S (e.g., at the central region of the top surface 171 of the substrate support 106). It should be understood that each of the multi-wavelength pyrometers 149, 153, 155 can be positioned and / or oriented differently from that shown in Figure 1 , while still being able to measure the temperature at both a site on one of the windows (e.g., the upper window 108 and the lower window 110) and a site on one of the surfaces of the substrate support 106 (e.g., the top surface 171 and the bottom surface 172). Each of the multi-wavelength pyrometers 149, 153, 155 is adapted to detect radiation in two or more different wavelength ranges. For example, two wavelength ranges can be selected as (1) the wavelength range in which the upper window 108 and the lower window 110 are absorptive (e.g., from about 4,800 nm to about 5,200 nm), and (2) the wavelength range in which the substrate support 106 is absorptive (e.g., from about 3,300 nm to about 3,500 nm).

[0030] Figure 3 FIG. shows a simplified schematic cross-sectional view of a portion of a processing chamber 100 according to one or more embodiments. As shown, the temperature measurement at each of sites 249-Q, 253-Q, and 255-Q can be accomplished using one or more radiation beams. For example, in some embodiments, each of the multi-wavelength pyrometers 149, 153, 155 is adapted to emit one or more radiation beams and receive one or more reflected radiation beams. In Figure 3In this case, the radiation beam 302 can be emitted by the multi-wavelength pyrometer 155. At the top surface 101 of the upper window 108, a portion of the radiation beam 302 can be reflected as the radiation beam 306. Another portion of the radiation beam 302 can be emitted as the radiation beam 304. It should be understood that depending on the material and temperature of the upper window 108, the reflected portion and the transmitted portion can have different wavelengths. For example, the reflected radiation beam 306 can have a wavelength in the range of approximately 4,800 nm to approximately 5,200 nm. The multi-wavelength pyrometer 155 is configured to receive the reflected radiation beam 306 and measure the intensity of the radiation beam 306. For example, the multi-wavelength pyrometer 155 can be configured to at least receive and measure radiation in the wavelength range of approximately 4,800 nm to approximately 5,200 nm. At the top surface 171 of the substrate support 106, a portion of the radiation beam 304 can be reflected as the radiation beam 308. Additionally, a portion of the radiation beam 308 can be transmitted through the upper window 108 again, resulting in the radiation beam 309. It should be understood that depending on the materials and temperatures of the substrate support 106 and the upper window 108, the reflected portion (e.g., the radiation beam 308) and the reflected-transmitted portion (e.g., the radiation beam 309) can each have a specific wavelength. For example, the radiation beam 309 can have a wavelength in the range of approximately 3,300 nm to approximately 3,500 nm. The multi-wavelength pyrometer 155 is configured to receive the transmitted-reflected-transmitted radiation beam 309 and measure the intensity of the radiation beam 309. For example, the multi-wavelength pyrometer 155 can be configured to at least receive and measure radiation in the wavelength range of approximately 3,300 nm to approximately 3,500 nm.

[0031] For example, the upper window 108 and the lower window 110 can be formed of quartz, which is absorptive in the wavelength range greater than approximately 4800 nm and transmissive at wavelengths from approximately 150 nm to approximately 4800 nm, depending on the selected quartz material, for typical chamber operating temperatures and pressures. In some embodiments, the upper window 108 and the lower window 110 can be formed of a material that is transmissive at certain wavelengths at which the substrate support 106 can be absorptive (e.g., for typical chamber operating temperatures and pressures, the wavelength range is from approximately 150 nm to approximately 15,000 nm).

[0032] In some embodiments, one or more of the multi-wavelength pyrometers 149, 153, and 155 can simultaneously measure more than two different wavelengths (or wavelength ranges). For example, one or more of the multi-wavelength pyrometers 149, 153, and 155 can simultaneously measure radiation in the wavelength ranges of approximately 2,650 nm to approximately 2,750 nm, approximately 3,300 nm to approximately 3,500 nm, and approximately 4,800 nm to approximately 5,200 nm.

[0033] The temperature measurements performed by each of the multi-wavelength pyrometers 149, 153, and 155 can be used to monitor the temperature within the processing chamber 100. Additionally, the temperature measurements can be used to assess the operating state of the processing chamber. For example, the difference in temperature measurements can be utilized to detect reactant coatings on the upper window 108 and / or the lower window 110. Such coating detection can be obtained without opening the processing chamber 100 for process and / or cleaning optimization. For example, FIG. 4 illustrates exemplary temperature variations that can be detected. Line 451 is an exemplary temperature measurement of the substrate support in a processing chamber with a transparent upper window. Line 452 is an exemplary temperature measurement of the substrate support in a processing chamber with an upper window during coating. The temperature variation is indicated by line 453. Line 461 is an exemplary temperature measurement of the transparent upper window. Line 462 is an exemplary temperature measurement of the upper window being coated. The temperature variation is indicated by line 463.

[0034] In some embodiments, the controller 120 can receive temperature measurements from any one of the multi-wavelength pyrometers 149, 153, 155. The controller 120 can store one or more of the temperature measurements. The controller 120 can compare any one of the temperature measurements with any one or more of the other temperature measurements. The controller 120 can assess the operating state of the processing chamber 100 based on the temperature measurements and / or their comparison. For example, the operating state may be less efficient due to a coated window. The controller can cause a change in the environment of the processing chamber based on the assessment of the operating state. For example, the controller can adjust the input power of the lamps 141, 143 to adjust the temperature of the processing space. The controller can issue an alarm based on the assessment of the operating state. For example, the controller 120 can notify the user that the upper window 108 or the lower window 110 requires a coating mitigation procedure.

[0035] Figure 5 is a block diagram of a method 500 for monitoring a processing chamber using a multi-wavelength pyrometer according to one or more embodiments. Method 500 begins at operation 510, which includes measuring the temperature of a window (e.g., upper window 108, lower window 110) with a multi-wavelength pyrometer "P1" at a first time "T1". For example, the temperature can be measured at a site close to the window (e.g., the central region of the window or the peripheral region of the window).

[0036] Simultaneous with operation 510 (e.g., at time T1), method 500 continues with operation 520, which includes measuring the temperature of the substrate support (e.g., substrate support 106) with the multi-wavelength pyrometer P1. For example, the temperature can be measured at a site close to the substrate support (e.g., the central region of the substrate support or the peripheral region of the substrate support).

[0037] After operation 510, method 500 continues with operation 530, which includes measuring another temperature of the window with a multi-wavelength pyrometer P1 at a later time “T2”. For example, the temperature can be measured at the same site as in operation 510.

[0038] Simultaneously with operation 530 (e.g., at time T2), method 500 continues with operation 540, which includes measuring another temperature of the substrate support with a multi-wavelength pyrometer P1. For example, the temperature can be measured at the same site as in operation 530.

[0039] After operation 530, method 500 continues with operation 550, which includes assessing the operating state of the processing chamber based on the temperature measurements (e.g., window temperature measurements at T1 and T2, and substrate support temperature measurements at T1 and T2). For example, the temperature measurements can be stored and tracked as data. As another example, averages, derivatives, modeling, imaging, and / or other data analysis techniques can be used to analyze and / or compare the data.

[0040] Based on the assessment of the operating state of the chamber at operation 550, method 500 proceeds to operation 551 or operation 552 (or both). Operation 551 includes causing a change in the environment of the processing chamber. For example, the environment can be changed by varying the input power to at least one of the lamps delivered to the chamber. Operation 552 includes generating an alert. For example, the alert can indicate a cleaning instruction for the window. In some embodiments, which can be combined with other embodiments, the cleaning instruction directs an operator (such as on a display of a user interface) to mitigate the buildup on the window. The window can be cleaned before the buildup reduces the processing efficiency. In some embodiments, which can be combined with other embodiments, the cleaning instruction provides an operator with an estimate of the buildup process, such as the remaining available chamber operating time before the processing efficiency degrades severely. The operator can use such an estimate of the buildup process to plan and perform appropriate maintenance activities to reduce machine downtime, lower costs and resource expenditures, and increase the substrate throughput of the processing chamber.

[0041] The controller 120 may include one or more machine learning algorithms and / or artificial intelligence algorithms that can implement, adjust, and / or refine one or more of the above algorithms, inputs, outputs, or variables. Additionally or alternatively, the one or more machine learning algorithms and / or artificial intelligence algorithms may rank or prioritize certain aspects of the adjustment of the processing chamber 100 and the method 500 relative to other aspects of the processing chamber 100 and the method 500. The one or more machine learning algorithms and / or artificial intelligence algorithms may consider other variations within the processing system, such as hardware replacement and / or degradation. In another example, the one or more machine learning algorithms and / or artificial intelligence algorithms may consider upstream or downstream variations that may occur in the processing system due to variable variations of the processing chamber 100 and the method 500. For example, if variable "A" is adjusted to cause a change in aspect "B" of the process, and such adjustment inadvertently causes a change in aspect "C" of the process, then the one or more machine learning algorithms and / or artificial intelligence algorithms may consider such a change in aspect "C". In such examples, the one or more machine learning algorithms and / or artificial intelligence algorithms embody predictive aspects related to implementing the processing chamber 100 and the method 500. The predictive aspects can be used to preemptively mitigate unexpected variations within the processing system. The one or more machine learning algorithms and / or artificial intelligence algorithms may use, for example, regression models (such as linear regression models) or clustering techniques to estimate optimization parameters. The algorithms can be unsupervised or supervised.

[0042] Moreover, embodiments of the present disclosure (such as embodiments of the intermediate plate) are modular and can be used across multiple processing (e.g., deposition) operations and / or cleaning operations, including across multiple operating parameters. Additionally, one or more aspects, features, components, operations, and / or properties of the various processing kits (such as the intermediate plate) described herein can be selected, combined, and / or modified depending on the processing parameters (such as flow rate, temperature, pressure, and / or gas composition) used in the processing operation and / or cleaning operation.

[0043] It is contemplated that one or more aspects disclosed herein can be combined. As an example, one or more aspects, features, components, operations, and / or properties of the processing chamber 100, the controller 120, the windows 108, 110, the pyrometers 149, 153, 155, and / or the method 500 can be combined. Additionally, it is contemplated that one or more aspects disclosed herein may include some or all of the above benefits.

[0044] Embodiments of the present disclosure also relate to any one or more of the following embodiments 1 to 20:

[0045] 1. A system for processing a substrate, comprising: a processing chamber including a processing space; a first window at a first perimeter of the processing space; a substrate support within the processing space; and a first multi-wavelength pyrometer configured to measure: a first temperature at a first site proximate to the first window; and a second temperature at a second site proximate to the substrate support.

[0046] 2. The system according to Embodiment 1, the system further comprising a second multi-wavelength pyrometer, wherein the second multi-wavelength pyrometer is configured to measure: a third temperature at a third site proximate to the first window; and a fourth temperature at a fourth site proximate to the substrate support, wherein: the first site is different from the third site, and the second site is different from the fourth site.

[0047] 3. The system according to Embodiment 2, wherein: the first site is proximate to a central region of the first window, and the second site is proximate to a central region of the substrate support.

[0048] 4. The system according to Embodiment 2, wherein: the second site is proximate to a top surface of the substrate support, and the fourth site is proximate to a bottom surface of the substrate support.

[0049] 5. The system according to Embodiment 2, the system further comprising: a second window at a second perimeter of the processing space; a third multi-wavelength pyrometer, wherein the third multi-wavelength pyrometer is configured to measure: a fifth temperature at a fifth site proximate to the second window; and a sixth temperature at a sixth site proximate to the substrate support, wherein: the first site, the third site, and the fifth site are different from each other, and the second site, the fourth site, and the sixth site are different from each other.

[0050] 6. The system according to one or more of Embodiments 1-5, wherein: the first window comprises quartz, and the substrate support comprises silicon.

[0051] 7. The system according to one or more of Embodiments 1-6, wherein the first multi-wavelength pyrometer is configured to measure temperatures in the following wavelength ranges: from about 2,650 nm to about 2,750 nm, from about 3,300 nm to about 3,500 nm; and from about 4,800 nm to about 5,200 nm.

[0052] 8. The system according to one or more of Embodiments 1-7, the system further comprising a controller configured to: receive temperature measurements from the first multi-wavelength pyrometer; and evaluate an operating state of the processing chamber based on these temperature measurements.

[0053] 9. The system according to embodiment 8, wherein the controller is further configured to: store the temperature measurements; compare the stored temperature measurements; and assess the operating state of the processing chamber based on the comparison of the temperature measurements.

[0054] 10. The system according to one or more of embodiments 1-9, wherein the first multi-wavelength pyrometer is configured to simultaneously measure the first temperature and the second temperature.

[0055] 11. A method of monitoring a processing chamber, comprising: measuring a first temperature at a first site within the processing chamber with a first multi-wavelength pyrometer, wherein the first site is proximate a first window at a first perimeter of a processing space of the processing chamber; while measuring the first temperature, measuring a second temperature at a second site within the processing chamber with the first multi-wavelength pyrometer, wherein the second site is proximate a substrate support within the processing space; after measuring the first temperature, measuring a third temperature at the first site with the first multi-wavelength pyrometer; while measuring the third temperature, measuring a fourth temperature at the second site with the first multi-wavelength pyrometer; assessing the operating state of the processing chamber based on the first temperature, the second temperature, the third temperature, and the fourth temperature; and based on the assessment of the operating state, performing at least one of the following actions: causing a change in the environment of the processing chamber; and generating an alarm.

[0056] 12. The method according to embodiment 11, wherein assessing the operating state includes: comparing at least two of the first temperature, the second temperature, the third temperature, and the fourth temperature.

[0057] 13. The method according to embodiment 11 or 12, wherein causing the change in the environment includes: adjusting an input power of one or more lamps of the processing chamber.

[0058] 14. The method according to any one of embodiments 11-13, wherein generating the alarm includes: notifying a user that the first window requires a coating mitigation procedure.

[0059] 15. The method according to any one of embodiments 11-14, wherein the first multi-wavelength pyrometer is configured to measure temperatures in the following wavelength ranges: from about 3,300 nm to about 3,500 nm and from about 4,800 nm to about 5,200 nm.

[0060] 16. According to the method described in any one of embodiments 11-15, the method further includes: measuring a fifth temperature at a third site in the processing chamber with a second multi-wavelength pyrometer, wherein the third site is close to the first window; while measuring the fifth temperature, measuring a sixth temperature at a fourth site in the processing chamber with the second multi-wavelength pyrometer, wherein the fourth site is close to the substrate support; after measuring the fifth temperature, measuring a seventh temperature at the third site with the second multi-wavelength pyrometer; and while measuring the fifth temperature, measuring an eighth temperature at the fourth site with a second multi-wavelength pyrometer, wherein: the first site is different from the third site, the second site is different from the fourth site, and the assessment of the operating state is further based on the fifth temperature, the sixth temperature, the seventh temperature, and the eighth temperature.

[0061] 17. According to the method described in embodiment 16, wherein: the first site is close to the central region of the first window, and the second site is close to the central region of the substrate support.

[0062] 18. According to the method described in embodiment 16, wherein: the second site is close to the top surface of the substrate support, and the fourth site is close to the bottom surface of the substrate support.

[0063] 19. According to the method described in embodiment 16, the method further includes: measuring a ninth temperature at a fifth site in the processing chamber with a third multi-wavelength pyrometer, wherein the fifth site is close to a second window at the second perimeter of the processing space; while measuring the ninth temperature, measuring a tenth temperature at a sixth site in the processing chamber with the third multi-wavelength pyrometer, wherein the sixth site is close to the substrate support; after measuring the ninth temperature, measuring an eleventh temperature at the fifth site with the third multi-wavelength pyrometer; and while measuring the eleventh temperature, measuring a twelfth temperature at the sixth site with a third multi-wavelength pyrometer, wherein: the first site, the third site, and the fifth site are different from each other, the second site, the fourth site, and the sixth site are different from each other, and the assessment of the operating state is further based on the ninth temperature, the tenth temperature, the eleventh temperature, and the twelfth temperature.

[0064] 20. A system for processing a substrate, comprising: a processing chamber including a processing space; a first window at a first perimeter of the processing space; a second window at a second perimeter of the processing space; a substrate support within the processing space; a first multi-wavelength pyrometer configured to measure: a first temperature at a first site proximate to the first window; and a second temperature at a second site proximate to the substrate support; a second multi-wavelength pyrometer configured to measure: a third temperature at a third site proximate to the first window; and a fourth temperature at a fourth site proximate to the substrate support; a third multi-wavelength pyrometer configured to measure: a fifth temperature at a fifth site proximate to the second window; and a sixth temperature at a sixth site proximate to the substrate support; wherein: the first window comprises quartz, the second window comprises quartz, the substrate support comprises silicon, the first site, the third site, and the fifth site are different from each other, and the second site, the fourth site, and the sixth site are different from each other.

[0065] Although the foregoing has been directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof, and the scope of the present disclosure is determined by the appended claims. All documents described herein are incorporated herein by reference, including any priority documents and / or test procedures, provided they are not inconsistent herewith. As is apparent from the foregoing general description and the specific embodiments, various modifications may be made without departing from the spirit and scope of the present disclosure. Accordingly, it is not intended that the present disclosure be limited thereby. Similarly, for purposes of U.S. law, the term "comprising" is considered synonymous with the term "including". Similarly, whenever a composition, an element, or a group of elements is preceded by the transitional phrase "comprising", it should be understood that the same composition or group of elements preceded by the transitional phrases "consisting essentially of", "consisting of", "selected from the group consisting of", or "is" is also contemplated, and vice versa. As used herein, the term "about" means a variation of + / - 10% relative to the nominal value. It should be understood that such variations may be included in any value provided herein.

[0066] Certain embodiments and features have been described using a set of upper numerical limits and a set of lower numerical limits. It should be understood that any specified numerical range includes the lower endpoint value and the upper endpoint value, unless otherwise stated. It should be understood that, unless otherwise stated, ranges that include any combination of two values, such as any combination of a lower limit value and an upper limit value, any combination of two lower limit values, and / or any combination of two upper limit values are contemplated. Certain lower limits, upper limits, and ranges appear in one or more of the claims below.

Claims

1. A system for processing a substrate, the system comprising: A processing chamber including a processing space; A first window at a first perimeter of the processing space; A substrate support within the processing space; And A first multi-wavelength pyrometer configured to measure: A first temperature at a first site proximate to the first window; And A second temperature at a second site proximate to the substrate support.

2. The system of claim 1, the system further comprising a second multi-wavelength pyrometer, wherein the second multi-wavelength pyrometer is configured to measure: A third temperature at a third site proximate to the first window; and A fourth temperature at a fourth site proximate to the substrate support, wherein: The first site is different from the third site, and The second site is different from the fourth site.

3. The system of claim 2, wherein: The first site is proximate to a central region of the first window, and The second site is proximate to a central region of the substrate support.

4. The system of claim 2, wherein: The second site is proximate to a top surface of the substrate support, and The fourth site is proximate to a bottom surface of the substrate support.

5. The system of claim 2, the system further comprising: A second window at a second perimeter of the processing space; A third multi-wavelength pyrometer, wherein the third multi-wavelength pyrometer is configured to measure: A fifth temperature at a fifth site proximate to the second window; And A sixth temperature at a sixth site proximate to the substrate support, wherein: The first site, the third site, and the fifth site are different from each other, and The second site, the fourth site, and the sixth site are different from each other.

6. The system of claim 1, wherein: The first window comprises quartz, and The substrate support comprises silicon.

7. The system of claim 1, wherein the first multi-wavelength pyrometer is configured to measure temperatures in the following wavelength ranges: From about 2,650 nm to about 2,750 nm; From about 3,300 nm to about 3,500 nm; and From about 4,800 nm to about 5,200 nm.

8. The system of claim 1, the system further comprising a controller configured to: Receive temperature measurements from the first multi-wavelength pyrometer; Assess an operating state of the processing chamber based on the temperature measurements.

9. The system of claim 8, wherein the controller is further configured to: Store the temperature measurements; Compare the stored temperature measurements; and Assess the operating state of the processing chamber based on the comparison of the temperature measurements.

10. The system of claim 1, wherein the first multi-wavelength pyrometer is configured to simultaneously measure the first temperature and the second temperature.

11. A method of monitoring a processing chamber, the method comprising: Measure a first temperature at a first site within the processing chamber, where the first site is close to a first window at a first periphery of a processing space of the processing chamber; While measuring the first temperature, measure a second temperature at a second site within the processing chamber, where the second site is close to a substrate support within the processing space; After measuring the first temperature, measure a third temperature at the first site with the first multi-wavelength pyrometer; While measuring the third temperature, measure a fourth temperature at the second site with the first multi-wavelength pyrometer; Evaluate an operating state of the processing chamber based on the first temperature, the second temperature, the third temperature, and the fourth temperature; and Based on the evaluation of the operating state, perform at least one of the following actions: Cause a change in the environment of the processing chamber; and Generate an alarm.

12. The method according to claim 11, wherein assessing the operating state comprises: Compare at least two of the first temperature, the second temperature, the third temperature, and the fourth temperature.

13. The method according to claim 11, wherein causing the change in the environment comprises: Adjust the input power of one or more lamps of the processing chamber.

14. The method according to claim 11, wherein generating the alert comprises: Notify the user that the first window requires a coating mitigation procedure.

15. The method according to claim 11, wherein the first multi-wavelength pyrometer is configured to measure temperatures in the following wavelength ranges: From about 3,300 nm to about 3,500 nm, and From about 4,800 nm to about 5,200 nm.

16. The method according to claim 11, the method further comprising: Measure a fifth temperature at a third site within the processing chamber with a second multi-wavelength pyrometer, where the third site is close to the first window; While measuring the fifth temperature, measure a sixth temperature at a fourth site within the processing chamber with the second multi-wavelength pyrometer, where the fourth site is close to the substrate support; After measuring the fifth temperature, measure a seventh temperature at the third site with the second multi-wavelength pyrometer; And While measuring the fifth temperature, measure an eighth temperature at the fourth part with the second multi-wavelength pyrometer, where: The first site is different from the third site, The second site is different from the fourth site, and The evaluation of the operating state is further based on the fifth temperature, the sixth temperature, the seventh temperature, and the eighth temperature.

17. The method according to claim 16, wherein: The first site is close to a central region of the first window, and The second site is close to a central region of the substrate support.

18. The method according to claim 16, wherein: The second site is close to a top surface of the substrate support, and The fourth site is close to a bottom surface of the substrate support.

19. The method according to claim 16, the method further comprising: Measure a ninth temperature at a fifth site within the processing chamber with a third multi-wavelength pyrometer, where the fifth site is close to a second window at a second periphery of the processing space; While measuring the ninth temperature, measure the tenth temperature at a sixth site within the processing chamber using the third multi-wavelength pyrometer, where the sixth site is close to the substrate support; After measuring the ninth temperature, measure the tenth temperature at the fifth site using the third multi-wavelength pyrometer; And While measuring the tenth temperature, measure the twelfth temperature at the sixth site using the third multi-wavelength pyrometer, where: The first site, the third site, and the fifth site are different from each other, The second site, the fourth site, and the sixth site are different from each other, and Evaluating the operating state is further based on the ninth temperature, the tenth temperature, the tenth temperature, and the twelfth temperature.

20. A system for processing a substrate, comprising: A processing chamber including a processing space; A first window at a first perimeter of the processing space; A second window at a second perimeter of the processing space; A substrate support within the processing space; A first multi-wavelength pyrometer configured to measure: A first temperature at a first site close to the first window; And A second temperature at a second site close to the substrate support; A second multi-wavelength pyrometer configured to measure: A third temperature at a third site close to the first window; And A fourth temperature at a fourth site close to the substrate support; A third multi-wavelength pyrometer configured to measure: A fifth temperature at a fifth site close to the second window; And A sixth temperature at a sixth site close to the substrate support; where: The first window comprises quartz, The second window comprises quartz, The substrate support comprises silicon, The first site, the third site, and the fifth site are different from each other, and The second site, the fourth site, and the sixth site are different from each other.

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