Treatment method of diamond-like carbon film

Abstract

The treatment method of the diamond-like carbon film comprises the following steps: forming a nano hole structure on the diamond-like carbon film; forming a metal layer on the nanometer hole structure; and forming a metal oxide layer or a metal hydroxide layer on the metal layer. The method is simple and efficient, and can effectively change the surface appearance and chemical properties of the diamond-like carbon film, so that the ductility and chemical stability of the diamond-like carbon film are improved, and the application range of the diamond-like carbon film is expanded.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor processing, and particularly to a method for treating diamond-like carbon films. Background Art

[0002] With the development of technology, diamond-like carbon (DLC) films are amorphous carbide films prepared using materials similar to silicon carbide or tungsten carbide. Due to their high hardness, extremely low surface energy, and chemical stability, DLC films have extensive applications in fields such as scientific research, industrial production, medical devices, and optical devices. However, the poor ductility of DLC films limits their use in certain applications.

[0003] Therefore, how to improve the ductility of DLC films has become one of the current research hotspots, and it is necessary to provide an improved method for treating diamond-like carbon films to overcome the above defects. Summary of the Invention

[0004] The purpose of the present invention is to provide an improved method for treating diamond-like carbon films. This method is simple and efficient, can effectively change the surface morphology and chemical properties of diamond-like carbon films, thereby improving their ductility, enhancing their chemical stability, and further expanding their application scope.

[0005] To achieve the above purpose, the method for treating diamond-like carbon films of the present invention includes the following steps:

[0006] Form a nano-hole structure on the diamond-like carbon film;

[0007] Form a metal layer on the nano-hole structure; and

[0008] Form a metal oxide layer or a metal hydroxide layer on the metal layer.

[0009] Compared with the prior art, in the method of the present invention, first, a nano-hole structure is formed on the diamond-like carbon film, and then a metal layer is formed on the nano-hole structure. The metal layer formed on the hole structure can effectively change the surface morphology and characteristics of the diamond-like carbon film and improve its ductility. Finally, a metal oxide layer or a metal hydroxide layer is formed on the metal layer, thereby increasing its chemical inertness and improving its chemical stability, making the application scope of the diamond-like carbon film wider.

[0010] As an embodiment, the nano-hole structure is formed by an electrochemical etching method, a hydrothermal method, or a solvothermal method.

[0011] As an embodiment, the nano-hole structure is formed by an electrochemical etching method, and the etching solution is a hydrofluoric acid solution.

[0012] Preferably, the electrochemical parameters in the electrochemical corrosion method are controlled as follows: the voltage is 5-10 V, and the current density is 10-15 mA / cm 2 .

[0013] Preferably, the corrosion time in the electrochemical corrosion method is 30-60 minutes.

[0014] Preferably, the metal layer is gold or silver.

[0015] Preferably, the metal in the metal oxide layer or the metal hydroxide layer is selected from at least one of copper, zinc, and titanium.

[0016] Preferably, the metal layer, the metal oxide layer, or the metal hydroxide layer is formed by physical vapor deposition, chemical vapor deposition, or electron beam evaporation.

[0017] Preferably, the thickness of the metal layer is 5-10 nm.

[0018] Preferably, for the treatment method of the diamond-like carbon film, the thickness of the metal oxide layer or the metal hydroxide layer is 15-20 nm. Detailed Embodiments

[0019] To make the above objects, features, and advantages of the present application more obvious and understandable, the following describes the detailed embodiments of the present application in conjunction with some embodiments. Many specific details are set forth in the following description to fully understand the present application. However, the present application can be implemented in many other ways different from those described herein. Those skilled in the art can make similar improvements without departing from the connotation of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.

[0020] In the description of the present application, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of these features. In the description of the present application, the meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise specifically defined.

[0021] In this application, unless otherwise clearly specified or limited, the first feature being "on" or "under" the second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "over" and "on top of" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply indicates that the horizontal height of the first feature is higher than that of the second feature. The first feature being "under", "beneath" and "underneath" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply indicates that the horizontal height of the first feature is less than that of the second feature.

[0022] It should be noted that when an element is referred to as "fixed to" or "disposed on" another element, it can be directly on the other element or there may also be an intermediate element. When an element is considered to be "connected" to another element, it can be directly connected to the other element or there may be an intermediate element at the same time. The terms "vertical", "horizontal", "up", "down", "left", "right" and similar expressions used herein are only for the purpose of illustration and do not represent the only implementation.

[0023] The method for treating diamond-like carbon film of the present invention will be further described below in conjunction with embodiments, but the present invention is not limited thereby. The method of the present invention aims to provide a method for treating diamond-like carbon film, which is simple and efficient, can effectively change the surface morphology and chemical properties of the DLC film, thereby improving its ductility, improving its chemical stability, and further expanding its application range.

[0024] In an embodiment of the method for treating diamond-like carbon film of the present invention, the following steps are included:

[0025] Form a nano-hole structure on the diamond-like carbon film;

[0026] Form a metal layer on the nano-hole structure; and

[0027] Form a metal oxide layer or a metal hydroxide layer on the metal layer.

[0028] In the method of the present invention, first a nano-hole structure is formed on the diamond-like carbon film, and then a metal layer is formed on the nano-hole structure. The metal layer is formed on the hole structure, which can effectively change the surface morphology and properties of the diamond-like carbon film and improve its ductility; finally, a metal oxide layer or a metal hydroxide layer is formed on the metal layer, thereby increasing its chemical inertness and improving its chemical stability, making the application range of the diamond-like carbon film wider.

[0029] Specifically, a nano-porous structure can be formed on the diamond-like carbon film by treatments such as electrochemical etching, hydrothermal method, or solvothermal method. As an example, hydrofluoric acid solution is used as the etching solution to form the pore structure by electrochemical etching. Specifically, the diamond-like carbon film sample is placed in a 3.5 wt% hydrofluoric acid solution for electrochemical etching treatment. The electrochemical parameters in the electrochemical etching method are controlled as follows: the voltage is 5 - 10 V, the current density is 10 - 15 mA / cm 2 , and the etching time is 30 - 60 minutes. After the treatment, the surface morphology of the sample is observed by scanning electron microscope (SEM), and it can be observed that nano-porous structures of a certain size are formed on the surface of the diamond-like carbon film.

[0030] Next, a metal layer is formed on the nano-porous structure of the diamond-like carbon film, for example, by physical vapor deposition. Specifically, the diamond-like carbon film sample is placed in a vacuum chamber for physical vapor deposition treatment. The deposition source is a metal, such as gold or silver, and the deposition thickness is 5 - 10 nm. After the treatment, the surface chemical composition of the diamond-like carbon film is analyzed by X-ray photoelectron spectroscopy (XPS), and it can be found that a metal layer is deposited on the surface of the nano-pores.

[0031] Finally, a metal oxide layer or a metal hydroxide layer is formed on the metal layer, for example, by physical vapor deposition, chemical vapor deposition, or electron beam evaporation. Optionally, the metal in the metal oxide layer or the metal hydroxide layer is selected from at least one of copper, zinc, and titanium. As an example, the diamond-like carbon film sample is placed in a vacuum chamber for chemical vapor deposition treatment. The deposition source is an appropriate metal gas, and the deposition thickness is 15 - 20 nm. After the treatment, the surface structure of the DLC film is analyzed by X-ray diffraction (XRD), and it can be found that a metal oxide layer or a hydroxide layer is formed on the surface of the metal layer of the diamond-like carbon film.

[0032] By the above method, the present invention first forms a nano-porous structure on the diamond-like carbon film, and then forms a metal layer on the nano-porous structure. The metal layer formed on the pore structure can effectively change the surface morphology and properties of the diamond-like carbon film and improve its ductility. Finally, a metal oxide layer or a metal hydroxide layer is formed on the metal layer, thereby increasing its chemical inertness and improving its chemical stability, making the application range of the diamond-like carbon film wider. It can be seen that the present invention has important application value and economic benefits, and its technical application prospect is very broad.

[0033] The above-disclosed are only the preferred embodiments of the present invention. Of course, the scope of the rights of the present invention cannot be limited thereby. Therefore, equivalent changes made according to the scope of the patent application of the present invention still fall within the scope covered by the present invention.

Claims

1. A method for treating diamond-like carbon film, characterized in that, Including the following steps: Forming a nano-porous structure on the diamond-like carbon film; Forming a metal layer on the nano-porous structure; And Forming a metal oxide layer or a metal hydroxide layer on the metal layer.

2. The method for treating the diamond-like carbon film according to claim 1, characterized in that, The nano-porous structure is formed by an electrochemical etching method, a hydrothermal method or a solvothermal method.

3. The method for treating the diamond-like carbon film according to claim 1, wherein The nano-porous structure is formed by an electrochemical etching method, and the etching solution is a hydrofluoric acid solution.

4. The method for treating the diamond-like carbon film according to claim 3, wherein, The control of the electrochemical parameters in the said electrochemical corrosion method is as follows: the voltage is 5 - 10 V, and the current density is 10 - 15 mA / cm 2 .

5. The method for treating the diamond-like carbon film according to claim 3, wherein, The etching time in the electrochemical etching method is 30 - 60 minutes.

6. The method for treating the diamond-like carbon film according to claim 1, characterized in that, The metal layer is gold or silver.

7. The method for treating a diamond-like carbon film according to claim 1, wherein The metal in the metal oxide layer or the metal hydroxide layer is selected from at least one of copper, zinc, and titanium.

8. The method for treating the diamond-like carbon film according to claim 1, characterized in that, The metal layer, the metal oxide layer or the metal hydroxide layer is formed by physical vapor deposition, chemical vapor deposition or electron beam evaporation.

9. The method for treating the diamond-like carbon film according to claim 1, characterized in that, The thickness of the metal layer is 5 - 10 nm.

10. The method for treating the diamond-like carbon film according to claim 1, wherein The thickness of the metal oxide layer or the metal hydroxide layer is 15 - 20 nm.