Chip defect detection method and device, computer equipment and readable storage medium

Abstract

The invention relates to a chip defect detection method and device, computer equipment and a readable storage medium. The method comprises the following steps: under the condition that frequency domain excitation is applied to two ends of a vertical through hole of a to-be-tested chip, acquiring a to-be-tested radio frequency transmission characteristic of the to-be-tested chip; based on the radio frequency transmission characteristics to be measured, scattering parameter values to be measured of the vertical through hole are generated, standard scattering parameter values of the vertical through hole are obtained, and the standard scattering parameter values are scattering parameter values generated under the condition that frequency domain excitation is applied to the two ends of the vertical through hole when no defect exists in the chip to be measured; obtaining to-be-measured scattering parameter difference information between the standard scattering parameter value and the to-be-measured scattering parameter value; and generating a defect detection result of the to-be-detected chip based on the to-be-detected scattering parameter difference information. By adopting the method, defect detection can be accurately carried out on the chip.

Description

Technical Field

[0001] The present application relates to the technical field of defect detection, and particularly to a chip defect detection method, device, computer device, computer-readable storage medium, and computer program product. Background Art

[0002] With the development of science and technology, defect detection technology has penetrated into all walks of life. For example, defect detection can be applied to chips interconnected based on vertical vias. Such chips face more complex electrical, thermal, and mechanical stress problems. Under the action of these stresses, various defects will be generated inside the vias, resulting in the degradation of the overall performance of the chips. Therefore, in order to ensure the quality and reliability of the packaging structure, an effective method is needed to detect the defects inside the vias of the chips.

[0003] In traditional technologies, during the process of defect detection for chips interconnected based on vertical vias, scanning electron microscope image analysis or three-dimensional X-ray flaw detection methods are commonly used to study their defect characteristics. Specifically, by slicing the interconnect structure and then observing the defects of the sliced interconnect structure with scanning electron microscope images for process verification and failure analysis, or by performing three-dimensional tomography on the sample with three-dimensional X-rays and reconstructing the three-dimensional structure, and analyzing the defects of the chips through the reconstructed three-dimensional structure.

[0004] However, the current chip defect detection methods have the problem of insufficient accuracy. Summary of the Invention

[0005] Based on this, it is necessary to provide an accurate chip defect detection method, device, computer device, computer-readable storage medium, and computer program product for the above technical problems.

[0006] In a first aspect, the present application provides a chip defect detection method, including:

[0007] Obtaining the radio frequency transmission characteristics to be measured of the vertical via under the condition of applying a frequency domain excitation to both ends of the vertical via of the chip to be measured;

[0008] Generating the scattering parameter value to be measured of the vertical via based on the radio frequency transmission characteristics to be measured, and obtaining the standard scattering parameter value of the vertical via, where the standard scattering parameter value is the scattering parameter value generated under the condition of applying a frequency domain excitation to both ends of the vertical via when there are no defects in the chip to be measured;

[0009] Obtaining the difference information of the scattering parameter to be measured between the standard scattering parameter value and the scattering parameter value to be measured;

[0010] Generating a defect detection result of the chip to be measured based on the difference information of the scattering parameter to be measured.

[0011] In one embodiment, based on the difference information of the scattering parameters to be measured, a defect detection result of the chip to be measured is generated, including:

[0012] In the case where no defect type matching the difference information of the scattering parameters to be measured is detected, it is determined that the defect detection result of the chip to be measured indicates no defect;

[0013] In the case where a defect type matching the difference information of the scattering parameters to be measured is detected, based on the difference information of the scattering parameters to be measured, quantization information of the defect degree of the vertical through-hole is generated, and based on the defect type and the quantization information of the defect degree, a defect detection result of the chip to be measured is generated.

[0014] In one embodiment, before obtaining the radio frequency transmission characteristics to be measured of the chip to be measured when applying a frequency domain excitation to both ends of the vertical through-hole of the chip to be measured, the method further includes:

[0015] Obtain the standard scattering parameter values of the vertical through-holes in a normal chip, where the normal chip is of the same type as the chip to be measured;

[0016] Perform a reliability experiment on the vertical through-holes in the normal chip to obtain defective vertical through-holes, where there is at least one defect in the defective vertical through-holes;

[0017] When applying a frequency domain excitation to both ends of the defective vertical through-hole, obtain the defective radio frequency transmission characteristics of the defective vertical through-hole, and based on the defective radio frequency transmission characteristics, generate the defective scattering parameter values of the defective vertical through-hole;

[0018] Detect the target scattering parameter difference information between the defective scattering parameter values and the standard scattering parameter values, and determine the defect type of the defective vertical through-hole;

[0019] Associate and store the defect type and the target scattering parameter difference information corresponding to the defect type in a defect database.

[0020] In one embodiment, the radio frequency transmission characteristics to be measured include the first port input voltage and the first port reflected voltage obtained at one end of the vertical through-hole, and the second port input voltage and the second port reflected voltage obtained at the other end of the vertical through-hole; based on the radio frequency transmission characteristics to be measured, generating the scattering parameter values to be measured of the vertical through-hole includes:

[0021] Based on the first port input voltage and the first port reflected voltage, generate the input reflection coefficient of the vertical through-hole;

[0022] Based on the second port input voltage and the first port reflected voltage, generate the reverse transmission coefficient of the vertical through-hole;

[0023] Generate the forward transmission coefficient of the vertical via based on the input voltage of the first port and the reflected voltage of the second port;

[0024] Generate the output reflection coefficient of the vertical via based on the input voltage of the second port and the reflected voltage of the second port;

[0025] Collect the input reflection coefficient, reverse transmission coefficient, forward transmission coefficient, and output reflection coefficient to obtain the scattering parameter value to be measured of the vertical via.

[0026] In one embodiment, detecting the defect type matching the difference information of the scattering parameter to be measured includes:

[0027] Based on the difference information of the scattering parameter to be measured, obtain the difference value of the change trend between the scattering parameter value to be measured and the standard scattering parameter value, the target scattering parameter difference value between the scattering parameter value to be measured and the standard scattering parameter value at a preset frequency, and the resonant frequency offset amplitude between the scattering parameter value to be measured and the standard scattering parameter value;

[0028] Query the defect type that matches all three of the difference value of the change trend, the target scattering parameter difference value, and the resonant frequency offset amplitude.

[0029] In one embodiment, generating the defect degree quantization information of the vertical via based on the difference information of the scattering parameter to be measured further includes:

[0030] Based on the difference information of the scattering parameter to be measured, detect the change amplitude of the scattering parameter value, and obtain the change amplitude range of the scattering parameter value corresponding to each pre-configured defect degree level;

[0031] Detect the target scattering parameter value change amplitude range where the scattering parameter value change amplitude is located, and query the defect degree level corresponding to the target scattering parameter value change amplitude range;

[0032] Use the defect degree level corresponding to the target scattering parameter value change amplitude range as the defect degree quantization information of the vertical via.

[0033] In a second aspect, the present application also provides a chip defect detection device, including:

[0034] A radio frequency transmission characteristic acquisition module, configured to acquire the radio frequency transmission characteristic to be measured of the vertical via when applying a frequency domain excitation to both ends of the vertical via of the chip to be measured;

[0035] A scattering parameter acquisition module, configured to generate the scattering parameter value to be measured of the vertical via based on the radio frequency transmission characteristic to be measured, and acquire the standard scattering parameter value of the vertical via, where the standard scattering parameter value is the scattering parameter value generated when applying a frequency domain excitation to both ends of the vertical via in the chip to be measured without defects;

[0036] A scattering parameter difference acquisition module, configured to acquire the difference information of the scattering parameters to be measured between the standard scattering parameter value and the scattering parameter value to be measured;

[0037] A defect detection module, configured to generate a defect detection result of the chip to be measured based on the difference information of the scattering parameters to be measured.

[0038] In a third aspect, the present application further provides a computer device, including a memory and a processor. The memory stores a computer program, and when the processor executes the computer program, the following steps are implemented:

[0039] When applying a frequency-domain excitation to both ends of the vertical vias of the chip to be measured, acquire the radio frequency transmission characteristics to be measured of the vertical vias;

[0040] Based on the radio frequency transmission characteristics to be measured, generate the scattering parameter value to be measured of the vertical vias, and acquire the standard scattering parameter value of the vertical vias, where the standard scattering parameter value is the scattering parameter value generated when applying a frequency-domain excitation to both ends of the vertical vias when there are no defects in the chip to be measured;

[0041] Acquire the difference information of the scattering parameters to be measured between the standard scattering parameter value and the scattering parameter value to be measured;

[0042] Based on the difference information of the scattering parameters to be measured, generate a defect detection result of the chip to be measured.

[0043] In a fourth aspect, the present application further provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the following steps are implemented:

[0044] When applying a frequency-domain excitation to both ends of the vertical vias of the chip to be measured, acquire the radio frequency transmission characteristics to be measured of the vertical vias;

[0045] Based on the radio frequency transmission characteristics to be measured, generate the scattering parameter value to be measured of the vertical vias, and acquire the standard scattering parameter value of the vertical vias, where the standard scattering parameter value is the scattering parameter value generated when applying a frequency-domain excitation to both ends of the vertical vias when there are no defects in the chip to be measured;

[0046] Acquire the difference information of the scattering parameters to be measured between the standard scattering parameter value and the scattering parameter value to be measured;

[0047] Based on the difference information of the scattering parameters to be measured, generate a defect detection result of the chip to be measured.

[0048] In a fifth aspect, the present application further provides a computer program product, including a computer program. When the computer program is executed by a processor, the following steps are implemented:

[0049] When applying a frequency-domain excitation to both ends of the vertical vias of the chip under test, obtain the radio frequency transmission characteristics to be measured of the vertical vias;

[0050] Based on the radio frequency transmission characteristics to be measured, generate the scattering parameter values to be measured of the vertical vias, and obtain the standard scattering parameter values of the vertical vias, where the standard scattering parameter values are the scattering parameter values generated when applying a frequency-domain excitation to both ends of the vertical vias in the chip under test without defects;

[0051] Obtain the difference information of the scattering parameters to be measured between the standard scattering parameter values and the scattering parameter values to be measured;

[0052] Based on the difference information of the scattering parameters to be measured, generate the defect detection result of the chip under test.

[0053] In the above chip defect detection method, device, computer device, computer-readable storage medium and computer program product, in this application, by applying a frequency-domain excitation to both ends of the vertical vias of the chip under test, obtain the radio frequency transmission characteristics to be measured of the vertical vias, and then generate the scattering parameter values to be measured of the vertical vias. Without damaging the vertical vias in the chip under test, it is possible to perform non-destructive defect detection based on the difference information of the scattering parameters to be measured between the scattering parameter values to be measured of the vertical vias when there are suspected defects and the standard scattering parameter values of the vertical vias when there are no defects. Different from the current three-dimensional X-ray flaw detection technology, defect detection is performed through the difference information of the scattering parameters to be measured. Even if there are minor defects in the vertical vias of the chip, the defect detection result of the chip under test can be accurately detected, improving the accuracy of chip defect detection. Description of the Drawings

[0054] In order to more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the following will briefly introduce the drawings required for use in the description of the embodiments of the present application or related technologies. Obviously, the drawings in the following description are some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other related drawings can also be obtained based on these drawings.

[0055] Figure 1 It is an application environment diagram of the chip defect detection method in an embodiment;

[0056] Figure 2 It is a flow schematic diagram of the chip defect detection method in an embodiment;

[0057] Figure 3 It is a schematic diagram of the structure to be tested when using a chip interconnected based on vertical vias as the chip under test in an actual application;

[0058] Figure 4 It is a schematic structural diagram for obtaining the RF transmission characteristics to be measured of a chip to be tested through a VNA (Vector Network Analyzer) in an actual application;

[0059] Figure 5 It is a schematic flowchart of a chip defect detection method in another embodiment;

[0060] Figure 6 It is a schematic diagram of the positions of various defects generated inside a chip to be tested in an actual application;

[0061] Figure 7 It is a schematic diagram of the voltage generated after applying a frequency-domain excitation to both ends of a vertical through-hole of a chip to be tested in an embodiment;

[0062] Figure 8 It is a structural block diagram of a chip defect detection device in an embodiment;

[0063] Figure 9 It is an internal structure diagram of a computer device in an embodiment. Detailed implementation manners

[0064] In order to make the objectives, technical solutions and advantages of the present application clearer and more understandable, the present application will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are used to explain the present application and are not used to limit the present application.

[0065] With the development of science and technology, defect detection technology has penetrated into all walks of life. For example, defect detection can be applied to chips interconnected based on vertical through-holes. Such chips face more complex electrical, thermal, and mechanical stress problems. Under the action of these stresses, various defects will be generated inside the through-holes, resulting in the degradation of the overall performance of the chips. Therefore, in order to ensure the quality and reliability of the packaging structure, an effective method is needed to detect the defects inside the through-holes of the chips.

[0066] Due to the small size of the through-holes, it is a major challenge to verify whether there are defects in the through-hole interconnection structure. In traditional technologies, scanning electron microscope image analysis is one of the commonly used methods for studying defect characteristics. It slices the interconnection structure and then observes the defects with a scanning electron microscope for process verification and failure analysis. However, the samples used for scanning electron microscope observation need to be ground, which is a destructive method. When the through-hole size becomes very small, this analysis method is no longer applicable. In addition, additional failures may occur during the sample grinding process, making the test process more expensive and unreliable. In order to obtain reliable defect analysis results, high-sensitivity non-destructive analysis is required.

[0067] In order to improve this, scholars have proposed the following two solutions, including:

[0068] The first one is the three-dimensional X-ray flaw detection method.

[0069] 3D X-ray flaw detection is an optical detection method that can perform defect analysis without sample slicing. Specifically, 3D X-rays are used to perform 3D tomography of the sample and reconstruct the 3D structure, and the defects are analyzed based on the reconstructed 3D structure. However, the 3D X-ray imaging and reconstruction process is time-consuming, has low detection efficiency, and has resolution limitations, making it difficult to detect tiny defects in interconnected structures.

[0070] The second method is to use the DC resistance measurement technology of the interconnection channel.

[0071] The DC resistance measurement technology of interconnect channels is a non-destructive method for reliability research of through-hole interposers in terms of electromigration and thermal cycling based on electrical engineering. The specific process is to analyze the degree of defects by comparing the changes in the DC impedance of the interconnect channels before and after the reliability test. However, this method has the following main disadvantages: (1) Since the defects in the through-holes are generally small, the DC resistance of the through-holes is insensitive to the defects. Therefore, the use of DC resistance in reliability research will lead to a delay in the exposure of defects, thereby delaying the prediction of performance degradation, which is extremely unfavorable for the overall reliability prediction of the system. (2) DC resistance analysis can usually only provide an overall resistance value and cannot distinguish different types of defects, such as cracks and voids. In addition, for TSV (Through Silicon Via) structures, an insulating layer is arranged between the through-hole metal and silicon, and DC resistance cannot detect the damage of the insulating layer, resulting in incomplete reliability research on the interconnect structure.

[0072] Based on the above analysis, it can be seen that the current chip defect detection methods all have the problem of inaccuracy.

[0073] The chip defect detection method provided in the embodiment of the present application can be applied to Figure 1 In the application environment shown, the terminal 102 communicates with the defect detection device 104, and the defect detection device 104 is used to perform defect detection on the chip to be tested.

[0074] The inspector triggers the defect detection control of the terminal 102. The terminal 102 responds to the control trigger operation, controls the defect detection device 104 to apply a frequency-domain excitation to both ends of the vertical vias of the chip under test, and obtains the radio frequency transmission characteristics to be measured of the vertical vias; based on the radio frequency transmission characteristics to be measured, generates the scattering parameter values to be measured of the vertical vias, and obtains the standard scattering parameter values of the vertical vias, where the standard scattering parameter values are the scattering parameter values generated under the condition of applying a frequency-domain excitation to both ends of the vertical vias when there are no defects in the chip under test; obtains the difference information of the scattering parameters to be measured between the standard scattering parameter values and the scattering parameter values to be measured; based on the difference information of the scattering parameters to be measured, generates the defect detection result of the chip under test. Further, the terminal 102 also displays the defect detection result of the chip under test to the user.

[0075] Among them, the terminal 102 can be but is not limited to various personal computers, laptop computers, smart phones, tablet computers, Internet of Things devices, and portable wearable devices. The Internet of Things devices can be smart speakers, smart TVs, smart air conditioners, smart in-vehicle devices, projection devices, etc. The portable wearable devices can be smart watches, smart bracelets, head-mounted devices, etc. The head-mounted device can be a virtual reality (VR) device, an augmented reality (AR) device, smart glasses, etc.

[0076] In an exemplary embodiment, as Figure 2 shown, a chip defect detection method is provided. Taking the method applied to the Figure 1 terminal 102 in it as an example for illustration. Among them:

[0077] S200, under the condition of applying a frequency-domain excitation to both ends of the vertical vias of the chip under test, obtain the radio frequency transmission characteristics to be measured of the vertical vias.

[0078] Among them, the chip under test is a chip suspected of having defects in the vertical vias. The chips in this application can be chips interconnected based on vertical vias. Applying a frequency-domain excitation means applying an input signal within a certain frequency range to both ends of the vertical vias of the chip under test. The input signal can be a sine wave or a cosine wave, etc. The radio frequency transmission characteristics to be measured include radio frequency transmission characteristics such as incident voltage, reflected voltage, and transmitted voltage.

[0079] Specifically, design a test structure to be tested for the chip under test. The test structure to be tested includes the chip under test and radio frequency test probe contact points. The radio frequency test probe contact points include a signal contact point in the middle and two ground contact points on both sides, as Figure 3The figure shows a schematic diagram of a structure to be tested when a chip interconnected based on vertical vias is used as the chip under test in an actual application. The via interconnection structure to be tested includes Port 1 and Port 2, and each port includes two ground contacts and one signal contact.

[0080] Furthermore, control the defect detection device to apply a frequency-domain excitation to both ends of the vertical vias of the chip under test. When applying the frequency-domain excitation to both ends of the vertical vias of the chip under test, make good contact with the two ports of the structure to be tested through two GSG (Ground-Signal-Ground) type radio frequency test probes, as Figure 4 shown, and connect the radio frequency probes to a vector network analyzer through coaxial cables. Subsequently, obtain the radio frequency transmission characteristics to be measured of the vertical vias in the chip under test through the VNA. For example, obtain radio frequency transmission characteristics such as the incident, reflected, and transmitted voltages of the two ports.

[0081] In an exemplary embodiment, apply a frequency-domain excitation to both ends of the vertical vias of the chip under test to measure the radio frequency transmission characteristics to be measured of the vertical vias within a fixed frequency range. The present application can also adjust the applied frequency-domain excitation to obtain the scattering parameter values to be measured of the vertical vias at different frequencies.

[0082] S400, generate the scattering parameter values to be measured of the vertical vias based on the radio frequency transmission characteristics to be measured, and obtain the standard scattering parameter values of the vertical vias.

[0083] Among them, the scattering parameter value is also called the S parameter. The S parameter is an important parameter in microwave transmission and describes the frequency-domain characteristics of a linear passive transmission channel. The standard scattering parameter value is the scattering parameter value generated when applying a frequency-domain excitation to both ends of the vertical vias in the chip under test when there are no defects in the chip under test.

[0084] Specifically, generate the scattering parameter values to be measured of the vertical vias according to the radio frequency transmission characteristics such as the incident, reflected, and transmitted voltages of the two ports. Using the scattering parameter values to be measured of the vertical vias, the transmission channel can be regarded as a black box, and almost all the characteristics of the transmission channel can be seen. For example, useful information about signal reflection, crosstalk, loss, etc. can be found from the S parameters. That is to say, the vertical vias can be regarded as a black box, and all the transmission characteristics of the vertical vias can be obtained through the scattering parameter values to be measured of the vertical vias. In addition, the standard scattering parameter values of the vertical vias can also be obtained, that is, the scattering parameter values generated when applying a frequency-domain excitation to both ends of the vertical vias in the chip under test when there are no defects in the chip under test.

[0085] S600, obtain the difference information of the scattering parameter values to be measured between the standard scattering parameter values and the scattering parameter values to be measured.

[0086] Specifically, the standard scattering parameter value is the scattering parameter value generated when there are no defects in the vertical vias of the chip under test, and the scattering parameter value to be measured is the scattering parameter value generated when there are suspected defects in the vertical vias of the chip under test. The difference in the scattering parameter values can amplify the characteristics of the tiny defects, showing extremely high defect detection sensitivity. Therefore, the difference information of the scattering parameter to be measured between the standard scattering parameter value and the scattering parameter value to be measured can be obtained. Based on the difference information of the scattering parameter to be measured, it can be determined whether the scattering parameter value to be measured is the scattering parameter value generated by the defective vertical vias.

[0087] S800, generate the defect detection result of the chip under test based on the difference information of the scattering parameter to be measured.

[0088] Specifically, through the difference information of the scattering parameter to be measured between the standard scattering parameter value and the scattering parameter value to be measured, it is determined whether the scattering parameter value to be measured is the scattering parameter value generated by the defective vertical vias. In the case where the scattering parameter value to be measured is the scattering parameter value generated by the defective vertical vias, it is determined that the defect detection result of the vertical vias indicates the existence of defects; in the case where the scattering parameter value to be measured is not the scattering parameter value generated by the defective vertical vias, it is determined that the defect detection result of the vertical vias indicates the absence of defects. Furthermore, since the chip under test is interconnected based on vertical vias, the defect detection result of the vertical vias can be used as the defect detection result of the chip under test.

[0089] Further, through the difference information of the scattering parameter to be measured between the standard scattering parameter value and the scattering parameter value to be measured, it is determined whether the scattering parameter value to be measured is the scattering parameter value generated by the defective vertical vias, including: by querying whether there is defect information corresponding to the difference information of the scattering parameter to be measured in the defect database. If it exists, the scattering parameter value to be measured is the scattering parameter value generated by the defective vertical vias; if it does not exist, the scattering parameter value to be measured is not the scattering parameter value generated by the defective vertical vias.

[0090] In the above chip defect detection method, in the present application, by applying a frequency-domain excitation to both ends of the vertical vias of the chip under test, the RF transmission characteristics to be measured of the vertical vias are obtained, and then the scattering parameter value to be measured of the vertical vias is generated. Without damaging the vertical vias in the chip under test, non-destructive defect detection can be performed based on the difference information of the scattering parameter to be measured between the scattering parameter value to be measured of the vertical vias when there are suspected defects and the standard scattering parameter value of the vertical vias when there are no defects. Different from the current three-dimensional X-ray flaw detection technology, defect detection is performed through the difference information of the scattering parameter to be measured. Even if there are tiny defects in the vertical vias of the chip, the defect detection result of the chip under test can be accurately detected, improving the accuracy of chip defect detection.

[0091] In an exemplary embodiment, based on the difference information of the scattering parameters to be measured, a defect detection result of the chip to be measured is generated, including:

[0092] In the case where no defect type matching the difference information of the scattering parameters to be measured is detected, it is determined that the defect detection result of the chip to be measured indicates no defect; in the case where a defect type matching the difference information of the scattering parameters to be measured is detected, based on the difference information of the scattering parameters to be measured, quantization information on the defect degree of the vertical through-hole is generated, and based on the defect type and the quantization information on the defect degree, a defect detection result of the chip to be measured is generated.

[0093] Specifically, in the present application, it is defaulted that there are no defects in other components of the chip to be measured except for the vertical through-hole interconnection structure, and it is queried whether there is defect information corresponding to the difference information of the scattering parameters to be measured in the defect database, which is actually to query whether there is a defect type corresponding to the difference information of the scattering parameters to be measured in the defect database. The defect database includes multiple groups of defect mapping data, and each group of defect mapping data includes the difference information of the scattering parameters to be measured and the defect type corresponding to the difference information of the scattering parameters to be measured.

[0094] In the case where no defect type matching the difference information of the scattering parameters to be measured is detected, it is considered that there are no defects in the vertical through-holes in the chip to be measured. At this time, there are also no defects in the chip to be measured, and no subsequent defect detection operation is required; in the case where a defect type matching the difference information of the scattering parameters to be measured is detected, it is considered that there are defects in the vertical through-holes in the chip to be measured, and the defect type of the vertical through-hole can also be determined. At this time, the defect type of the vertical through-hole is used as the defect detection result of the chip to be measured.

[0095] Furthermore, in the case where a defect type matching the difference information of the scattering parameters to be measured is detected, that is, when it is confirmed that there are defects in the vertical through-holes, quantization information on the defect degree of the vertical through-hole is generated based on the difference information of the scattering parameters to be measured. The quantization information on the defect degree refers to quantifying the defect degree of the vertical through-hole with a numerical value or a level. For example, the quantization information on the defect degree includes minor defects, moderate defects, and severe defects, etc.

[0096] Finally, the defect type and the quantization information on the defect degree are aggregated to generate a defect detection result of the vertical through-hole, so as to obtain a defect detection result of the chip to be measured. That is to say, the defect detection result of the chip to be measured includes the defect type and the quantization information on the defect degree of the vertical through-hole.

[0097] In a practical application, defect types that match the difference information of the scattering parameters to be measured are detected. For example, (1) RDL cracks will cause a local abnormal increase in the reflection coefficient in the scattering parameters and show a mutation in a specific frequency band; (2) the disconnection between the through-hole conductive metal and the RDL is manifested as a significant attenuation of the transmission characteristics in the scattering parameters; (3) the delamination of the insulation interface will affect the frequency response of the scattering parameters, especially manifested as the drift of the resonance point at high frequencies; (4) by gradually adjusting the test frequency range, the defect types can be located through the abnormal characteristics of the scattering parameter curve.

[0098] In the above embodiments, in the case where no defect types that match the difference information of the scattering parameters to be measured are detected, it is determined that the defect detection result of the chip to be measured indicates no defect. In the case where defect types that match the difference information of the scattering parameters to be measured are detected, it is determined that the defect detection result of the chip to be measured indicates a defect, which is accurate and efficient. Moreover, in the case where defect types that match the difference information of the scattering parameters to be measured are detected, the degree quantization information of the defects of the vertical through-holes will also be generated based on the difference information of the scattering parameters to be measured to obtain a more accurate defect detection result.

[0099] In an exemplary embodiment, as Figure 5 shown, before S200, the method further includes:

[0100] S110, obtaining the standard scattering parameter values of the vertical through-holes in a normal chip.

[0101] S120, performing a reliability experiment on the vertical through-holes in the normal chip to obtain defective vertical through-holes.

[0102] S130, when applying a frequency-domain excitation to both ends of the defective vertical through-hole, obtaining the defective radio-frequency transmission characteristics of the defective vertical through-hole and generating the defective scattering parameter values of the defective vertical through-hole based on the defective radio-frequency transmission characteristics.

[0103] S140, detecting the scattering parameter difference information between the defective scattering parameter values and the standard scattering parameter values and determining the defect types of the defective vertical through-holes.

[0104] S150, associatively storing the defect types and the corresponding scattering parameter difference information of the defect types in a defect database.

[0105] Wherein, the normal chip and the chip to be measured are of the same type; there is at least one defect in the defective vertical through-hole.

[0106] Specifically, when applying a frequency-domain excitation to both ends of the vertical vias of the chip under test, before obtaining the radio frequency transmission characteristics to be measured of the vertical vias, it is first necessary to obtain the standard scattering parameter values of the vertical vias in a normal chip. The normal chip is of the same type as the chip under test, and the vertical vias in the normal chip are also vertical vias without defects. Only then can the standard scattering parameter values of the vertical vias in the normal chip be used as the standard scattering parameter values of the vertical vias in the chip under test.

[0107] Subsequently, a reliability experiment is carried out on the vertical vias in the normal chip. The reliability experiment can cause various defects to occur inside the vertical vias in the normal chip. It should be explained that different reliability tests may cause single or multiple defects to appear simultaneously at different stages, depending on the stress concentration situation and the microstructure differences inside the material. For example, when performing a thermal shock reliability test on the vertical vias in the normal chip, under the action of cyclic stress, it may cause various defects as shown in Figure 6 Figure 5. Among them, ① represents RDL (ReDistribution Layer) cracks, ② represents the disconnection between the via conductive metal and the RDL, ③ represents the delamination between the via conductive metal and the insulation interface, ④ represents cracks inside the via conductive metal, and ⑤ represents cracks in the insulation layer.

[0108] At this time, a frequency-domain excitation is applied to both ends of the defective vertical vias, the defective radio frequency transmission characteristics of the defective vertical vias are obtained, and based on the defective radio frequency transmission characteristics, the defective scattering parameter values of the defective vertical vias are generated. The above process is the same as the process of generating the scattering parameter values to be measured of the vertical vias of the chip under test, and will not be elaborated here.

[0109] Then, by comparing the defective scattering parameter values after the reliability experiment with the standard scattering parameter values before the reliability experiment, the target scattering parameter difference information between the defective scattering parameter values and the standard scattering parameter values is obtained, and the performance and defect degree of the defective vertical vias are judged based on the target scattering parameter difference information between the defective scattering parameter values and the standard scattering parameter values.

[0110] Furthermore, the defect types of the defective vertical vias are determined by traditional defect detection methods. For example, traditional defect detection methods include:

[0111] (1) Scanning electron microscope: used for section analysis to observe microscopic defects such as cracks and voids.

[0112] (2) X-ray tomography: non-destructive analysis of internal defects of the structure, such as voids.

[0113] (3) DC resistance measurement: Analyze the presence of defects through resistance changes, but it is not sensitive to small defects. In DC resistance measurement, a significant increase in the DC resistance of the vertical vias is required to detect the crack propagation inside the conductive metal.

[0114] Finally, the defect type is equivalently associated with the target scattering parameter difference information corresponding to the defect type and stored in the defect database to provide a reference for subsequent defect detection. When conducting a reliability experiment later, the defect type matching the difference information of the measured scattering parameter value of the vertical through-hole can be queried by detecting the difference information of the measured scattering parameter value of the vertical through-hole.

[0115] In an exemplary embodiment, obtaining the standard scattering parameter value of the vertical through-hole in a normal chip includes: obtaining the standard radio frequency transmission characteristic of the normal chip when applying a frequency domain excitation to both ends of the vertical through-hole in the normal chip; generating the standard scattering parameter value of the vertical through-hole based on the normal radio frequency transmission characteristic.

[0116] In the above embodiment, by pre-establishing a defect database associating the defect type with the target scattering parameter difference information corresponding to the defect type, there is no need to use the traditional defect analysis method for defect detection. Only the difference analysis of the scattering parameter value needs to be directly performed using the method proposed in this application, and the defect degree and the impact of the reliability test on the performance can be obtained.

[0117] In an exemplary embodiment, the measured radio frequency transmission characteristic includes the first port input voltage and the first port reflected voltage obtained at one end of the vertical through-hole, and the second port input voltage and the second port reflected voltage obtained at the other end of the vertical through-hole; generating the measured scattering parameter value of the vertical through-hole based on the measured radio frequency transmission characteristic includes:

[0118] Generating the input reflection coefficient of the vertical through-hole based on the first port input voltage and the first port reflected voltage; generating the reverse transmission coefficient of the vertical through-hole based on the second port input voltage and the first port reflected voltage; generating the forward transmission coefficient of the vertical through-hole based on the first port input voltage and the second port reflected voltage; generating the output reflection coefficient of the vertical through-hole based on the second port input voltage and the second port reflected voltage; collecting the input reflection coefficient, the reverse transmission coefficient, the forward transmission coefficient, and the output reflection coefficient to obtain the measured scattering parameter value of the vertical through-hole.

[0119] Specifically, after applying a frequency domain excitation to both ends of the vertical through-hole, the port input voltage and the port reflected voltage at both ends of the vertical through-hole can be measured by a vector network analyzer. As Figure 7 shown, port 1 is the first port, port 2 is the second port. At one end of the vertical through-hole, the first port input voltage a1 and the first port reflected voltage b1 can be obtained, and at the other end of the vertical through-hole, the second port input voltage a2 and the second port reflected voltage b2 can be obtained.

[0120] Based on the input voltage a1 at the first port and the reflected voltage b1 at the first port, generate the input reflection coefficient S11 of the vertical via, which is the input return loss, where S11 = b1 / a1;

[0121] Based on the input voltage a2 at the second port and the reflected voltage b1 at the first port, generate the reverse transmission coefficient S12 of the vertical via, which is the isolation, where S12 = b1 / a2;

[0122] Based on the input voltage a1 at the first port and the reflected voltage b2 at the second port, generate the forward transmission coefficient S21 of the vertical via, which is the gain, where S21 = b2 / a1;

[0123] Based on the input voltage a2 at the second port and the reflected voltage b2 at the second port, generate the output reflection coefficient S22 of the vertical via, which is the output return loss, where S22 = b2 / a2.

[0124] Finally, collect all the input reflection coefficients, reverse transmission coefficients, forward transmission coefficients, and output reflection coefficients to obtain the scattering parameter values to be measured of the vertical via.

[0125] In the above embodiments, by obtaining the input voltage at the first port and the reflected voltage at the first port at one end of the vertical via, and the input voltage at the second port and the reflected voltage at the second port at the other end of the vertical via, the scattering parameter values to be measured of the vertical via can be accurately generated.

[0126] In an exemplary embodiment, detecting the types of defects that match the difference information of the scattering parameters to be measured includes:

[0127] Based on the difference information of the scattering parameters to be measured, obtain the difference value of the change trend between the scattering parameter value to be measured and the standard scattering parameter value, the target scattering parameter difference value between the scattering parameter value to be measured and the standard scattering parameter value at a preset frequency, and the resonant frequency offset amplitude between the scattering parameter value to be measured and the standard scattering parameter value; query the types of defects that match all of the difference value of the change trend, the target scattering parameter difference value, and the resonant frequency offset amplitude.

[0128] Specifically, compare and analyze the S parameters before and after the reliability experiment. Specifically, compare in terms of the difference value of the change trend between the scattering parameter value to be measured and the standard scattering parameter value, the target scattering parameter difference value between the scattering parameter value to be measured and the standard scattering parameter value at a preset frequency, and the resonant frequency offset amplitude between the scattering parameter value to be measured and the standard scattering parameter value. Generally speaking, it is to compare from aspects such as the shape of the S parameter curve, the S parameter value at a special frequency, and the movement of the resonant point.

[0129] That is to say, the difference information of the scattering parameters to be measured includes the difference value of the change trend between the value of the scattering parameter to be measured and the standard scattering parameter value, the target scattering parameter difference value between the value of the scattering parameter to be measured and the standard scattering parameter value at a preset frequency, and the resonance frequency offset amplitude between the value of the scattering parameter to be measured and the standard scattering parameter value. From the difference information of the scattering parameters to be measured, obtain the difference value of the change trend between the value of the scattering parameter to be measured and the standard scattering parameter value, the target scattering parameter difference value between the value of the scattering parameter to be measured and the standard scattering parameter value at a preset frequency, and the resonance frequency offset amplitude between the value of the scattering parameter to be measured and the standard scattering parameter value.

[0130] Finally, query the defect type that matches all of the change trend difference value, the target scattering parameter difference value, and the resonance frequency offset amplitude.

[0131] In an exemplary embodiment, there will be differences between the value of the scattering parameter to be measured and the standard scattering parameter value in terms of the change trend, the target scattering parameter value at a preset frequency, and the resonance frequency offset amplitude. Specifically:

[0132] (1) The comparison of the difference in the change trend of the scattering parameter values between the value of the scattering parameter to be measured and the standard scattering parameter value can also be regarded as the comparison of the curve shapes of the scattering parameter values. The curve shape of the scattering parameter value refers to the shape of the curve formed by the scattering parameter values at different frequencies. For example, a defect will cause the peak value of S11 to increase, the transmission loss of S21 to increase, and the curve to fluctuate more significantly.

[0133] (2) Regarding the target scattering parameter difference value between the value of the scattering parameter to be measured and the standard scattering parameter value at a preset frequency. For example, the comparison of the values of S11 before and after the 3 GHz frequency point can determine the abnormal situation of the conduction path.

[0134] (3) Regarding the offset amplitude between the resonance frequency of the value of the scattering parameter to be measured and the resonance frequency of the standard scattering parameter value. For example, a defect such as insulation interface delamination will cause the capacitance value to change, and the resonance point position of the S parameter will move towards the low-frequency direction. The comparison can be made by observing the resonance point offset trend.

[0135] In a practical application, by comparing the value of the scattering parameter to be measured with the standard scattering parameter value, it can be seen that defects in the vertical vias in the chip will affect the scattering parameter value. For example, when the insulation layer is cracked, the chip will have leakage, the reflection of the S11 parameter will increase, and the S21 parameter will decrease; when the copper and the insulation layer are delaminated, the reflection of the S11 parameter will decrease, and the S21 parameter will increase.

[0136] In the above embodiments, by analyzing aspects such as the difference in the change trend between the measured scattering parameter value and the standard scattering parameter value, the target scattering parameter difference value between the measured scattering parameter value and the standard scattering parameter value at a preset frequency, and the resonant frequency offset amplitude between the measured scattering parameter value and the standard scattering parameter value, the defect types of the vertical vias can be accurately queried.

[0137] In an exemplary embodiment, generating defect degree quantization information for the vertical vias based on the measured scattering parameter difference information further includes:

[0138] Based on the measured scattering parameter difference information, detecting the change amplitude of the scattering parameter value, and obtaining the change amplitude range of the scattering parameter value corresponding to each pre-configured defect degree level; detecting the target scattering parameter value change amplitude range in which the scattering parameter value change amplitude is located, and querying the defect degree level corresponding to the target scattering parameter value change amplitude range; using the defect degree level corresponding to the target scattering parameter value change amplitude range as the defect degree quantization information for the vertical vias.

[0139] Specifically, based on the measured scattering parameter difference information, detecting the change amplitude of the scattering parameter value, where the change amplitude of the scattering parameter value is the difference between the measured scattering parameter value and the standard scattering parameter value at each frequency, and obtaining the change amplitude range of the scattering parameter value corresponding to each pre-configured defect degree level.

[0140] Determine the target scattering parameter value change amplitude range in which the scattering parameter value change amplitude is located, and then, through the mapping relationship of the change amplitude range of the scattering parameter value corresponding to each pre-configured defect degree level, query the defect degree level corresponding to the target scattering parameter value change amplitude range. Finally, use the defect degree level corresponding to the target scattering parameter value change amplitude range as the defect degree quantization information for the vertical vias.

[0141] In an exemplary embodiment, the defect degree level is closely related to the measured scattering parameter difference information. The defect degree level includes but is not limited to minor defects, moderate defects, and severe defects. Specifically:

[0142] (1) Minor defect: Such as a small crack, the S21 transmission coefficient slightly attenuates, and the S11 reflection coefficient slightly increases.

[0143] (2) Moderate defect: Such as a partial disconnection of the conductive path, a significant decrease in S21, and a significant increase in the S11 peak.

[0144] (3) Severe defect: Such as a complete disconnection of the conductive path, S21 approaching zero, and S11 approaching 1 (100% reflection).

[0145] By comparing the change amplitude and frequency spectrum response of the S-parameters before and after the defect, the severity of the defect can be quantified.

[0146] In the above embodiments, by deeply analyzing the difference information of the scattering parameters to be measured, the defect degree level corresponding to the difference information of the scattering parameters to be measured can be accurately determined, and then the defect degree of the vertical through-hole can be accurately quantified.

[0147] In a practical application example, taking the application of the defect detection technology to chip A interconnected based on vertical through-holes as an example, the present application proposes a defect detection method for the performance and defect degree of the vertical through-hole interconnection structure based on an important parameter (S parameter) in the network analysis technology. Using this method, non-destructive defect detection of chip A can be performed. Compared with the traditional defect analysis scheme, the method proposed in the present application utilizes the different radio frequency transmission characteristics exhibited by the vertical through-hole interconnection structures in the complete and defective chip A, resulting in differences in the S parameters. The differences in the S parameters can amplify the characteristics of the minute defects in the vertical through-hole interconnection structure of chip A, showing extremely high defect detection sensitivity, and can expose the minute defects existing in the vertical through-hole interconnection structure of chip A earlier. The correct presentation of the defect degree can provide an accurate basis for reliability analysis, and at the same time can promptly present the performance degradation phenomenon of the vertical through-hole interconnection structure of chip A, without having to wait until the performance degrades to a more serious level to observe the corresponding performance degradation results. The specific chip defect detection method is as follows:

[0148] S1. First, determine a test frequency range, and then apply a frequency-domain excitation to both ends of the vertical through-hole of chip A when there are no defects, obtain the standard radio frequency transmission characteristics of the vertical through-hole of chip A, and generate the standard S parameter values of the vertical through-hole of chip A based on the standard frequency transmission characteristics.

[0149] S2. Conduct a thermal shock reliability experiment on the vertical through-holes in chip A to generate various defects inside the vertical through-holes.

[0150] S3. Apply a frequency-domain excitation to both ends of the defective vertical through-hole after the treatment in S2, obtain the defective radio frequency transmission characteristics of the defective vertical through-hole, and generate the defective S parameter values of the defective vertical through-hole based on the defective radio frequency transmission characteristics.

[0151] S4. Detect the target S parameter value difference information between the defective S parameter values and the standard S parameter values, and specifically, it can be compared from aspects such as the S parameter curve shape, the S parameter values at special frequencies, and the movement of resonance points.

[0152] S5. Determine the defect types of the defective vertical through-holes through traditional defect detection methods.

[0153] S6. Equivalent the defect types and the S-parameter differences, and store the correlation between the defect types and the S-parameter differences corresponding to the defect types in the defect database, so as to provide a reference for subsequent reliability experiments. In subsequent reliability experiments, there is no need to use traditional defect analysis methods to detect defects, and only the S-parameter difference analysis method proposed by the present invention needs to be directly used to obtain the defect degree and the impact of the reliability test on the performance.

[0154] S7. When performing a reliability experiment on the vertical vias in the chip B to be tested of the same type as chip A subsequently, the steps of obtaining the S-parameter differences of the vertical vias in the chip B to be tested can be repeated, and the defect types matching the S-parameter differences can be queried from the defect database.

[0155] S8. In the case where no defect type matching the S-parameter differences is detected, it is determined that there are no defects in the defect detection result of the chip B to be tested; in the case where a defect type matching the S-parameter differences is detected, based on the S-parameter difference information to be measured, the defect degree quantization information of the vertical vias of the chip B to be tested is generated, and based on the defect type and the defect degree quantization information, the defect detection result of the chip B to be tested is generated, that is, it is determined what types of defects occur and the severity of the defects when performing a reliability experiment on the vertical vias of the chip B to be tested.

[0156] Based on the above analysis, when the present application detects defects in a chip interconnected based on vertical vias, the following advantages exist:

[0157] 1. The performance of the through-hole interconnect structure can be studied in a relatively wide frequency range, which cannot be achieved by the current DC resistance technology. Since the through-hole interconnect structure will be applied to various chips with operating frequencies in the GHz range, the wide-band reliability analysis of the through-hole interconnect structure is crucial.

[0158] 2. The DC resistance technology is only sensitive to strong discontinuities in the conduction path. For minor defects in the micro-interconnect structure, especially defects such as via cracking, the DC resistance cannot be presented in a timely manner. At the same time, when performing a reliability test on a structure interconnected based on vertical vias, not only the change in the conduction path needs to be detected, but also the barrier layer and insulation layer around the via-filled metal and their interfaces need to be detected, which can only be achieved by the technology based on RF S-parameters. Therefore, the method proposed by the present application has higher sensitivity and comprehensiveness, and can provide a more reliable reliability prediction for the package structure.

[0159] 3. The method proposed by the present application can be combined with other technologies such as artificial intelligence to achieve the effects of distinguishing defect types and defect location, and has higher expandability.

[0160] It should be understood that although the steps in the flowcharts involved in the above embodiments are shown in sequence according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless there is a clear indication in this article, the execution of these steps has no strict order limit, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowcharts involved in the above embodiments may include multiple steps or multiple stages. These steps or stages are not necessarily executed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be executed alternately or in turn with at least a part of other steps or steps or stages in other steps.

[0161] Based on the same inventive concept, an embodiment of the present application further provides a chip defect detection device for implementing the chip defect detection method described above. The solution provided by this device to solve the problem is similar to the solution described in the above method. Therefore, the specific limitations in one or more embodiments of the chip defect detection device provided below can refer to the limitations on the chip defect detection method in the above text, and will not be repeated here.

[0162] In an exemplary embodiment, as Figure 8 shown, a chip defect detection device is provided, including: a radio frequency transmission characteristic acquisition module 200, a scattering parameter acquisition module 400, a scattering parameter difference acquisition module 600, and a defect detection module 800, where:

[0163] The radio frequency transmission characteristic acquisition module 200 is configured to acquire the radio frequency transmission characteristic to be measured of the vertical through-hole when applying a frequency domain excitation to both ends of the vertical through-hole of the chip to be measured.

[0164] The scattering parameter acquisition module 400 is configured to generate a scattering parameter value to be measured of the vertical through-hole based on the radio frequency transmission characteristic to be measured, and acquire a standard scattering parameter value of the vertical through-hole, where the standard scattering parameter value is a scattering parameter value generated when applying a frequency domain excitation to both ends of the vertical through-hole when there is no defect in the chip to be measured.

[0165] The scattering parameter difference acquisition module 600 is configured to acquire the scattering parameter difference information to be measured between the standard scattering parameter value and the scattering parameter value to be measured.

[0166] The defect detection module 800 is configured to generate a defect detection result of the chip to be measured based on the scattering parameter difference information to be measured.

[0167] In one embodiment, the defect detection module 800 is further configured to determine that the defect detection result of the chip under test indicates no defect when no defect type matching the difference information of the scattering parameter under test is detected; and when a defect type matching the difference information of the scattering parameter under test is detected, generate defect degree quantization information of the vertical through-hole based on the difference information of the scattering parameter under test, and generate a defect detection result of the chip under test based on the defect type and the defect degree quantization information.

[0168] In one embodiment, the defect detection device further includes a preprocessing module. The preprocessing module obtains the standard scattering parameter value of the vertical through-hole in a normal chip, where the normal chip has the same type as the chip under test; performs a reliability experiment on the vertical through-hole in the normal chip to obtain defective vertical through-holes, where at least one defect exists in the defective vertical through-holes; obtains the defective radio frequency transmission characteristics of the defective vertical through-holes when applying a frequency-domain excitation to both ends of the defective vertical through-holes, and generates a defective scattering parameter value of the defective vertical through-holes based on the defective radio frequency transmission characteristics; detects the target scattering parameter difference information between the defective scattering parameter value and the standard scattering parameter value, and determines the defect type of the defective vertical through-holes; and associates and stores the defect type and the target scattering parameter difference information corresponding to the defect type in a defect database.

[0169] In one embodiment, the radio frequency transmission characteristics under test include the first port input voltage and the first port reflected voltage obtained at one end of the vertical through-hole, and the second port input voltage and the second port reflected voltage obtained at the other end of the vertical through-hole; the scattering parameter acquisition module 400 is further configured to generate an input reflection coefficient of the vertical through-hole based on the first port input voltage and the first port reflected voltage; generate a reverse transmission coefficient of the vertical through-hole based on the second port input voltage and the first port reflected voltage; generate a forward transmission coefficient of the vertical through-hole based on the first port input voltage and the second port reflected voltage; generate an output reflection coefficient of the vertical through-hole based on the second port input voltage and the second port reflected voltage; and collect the input reflection coefficient, the reverse transmission coefficient, the forward transmission coefficient, and the output reflection coefficient to obtain the scattering parameter value under test of the vertical through-hole.

[0170] In one embodiment, the defect detection module 800 is further configured to obtain a change trend difference value between the scattering parameter value under test and the standard scattering parameter value, a target scattering parameter difference value between the scattering parameter value under test and the standard scattering parameter value at a preset frequency, and a resonance frequency offset amplitude between the scattering parameter value under test and the standard scattering parameter value based on the difference information of the scattering parameter under test; and query for a defect type that matches all of the change trend difference value, the target scattering parameter difference value, and the resonance frequency offset amplitude.

[0171] In one embodiment, the defect detection module 800 is further configured to detect the variation amplitude of the scattering parameter value based on the difference information of the scattering parameters to be measured, and obtain the range of the variation amplitude of the scattering parameter value corresponding to each pre-configured defect degree level; detect the target range of the variation amplitude of the scattering parameter value in which the variation amplitude of the scattering parameter value is located, and query the defect degree level corresponding to the target range of the variation amplitude of the scattering parameter value; and use the defect degree level corresponding to the target range of the variation amplitude of the scattering parameter value as the quantization information of the defect degree of the vertical via hole.

[0172] Each module in the above-mentioned defect detection device can be implemented in whole or in part by software, hardware, and their combination. Each of the above modules can be embedded in the processor of the computer device in the form of hardware or be independent of it, or can be stored in the memory of the computer device in the form of software, so that the processor can call and execute the operations corresponding to each of the above modules.

[0173] In an exemplary embodiment, a computer device is provided. The computer device may be a terminal, and its internal structure diagram may be as Figure 9 shown. The computer device includes a processor, a memory, an input / output interface, a communication interface, a display unit, and an input device. Among them, the processor, the memory, and the input / output interface are connected through a system bus, and the communication interface, the display unit, and the input device are connected to the system bus through the input / output interface. Among them, the processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The input / output interface of the computer device is used for exchanging information between the processor and external devices. The communication interface of the computer device is used for communicating with external terminals in a wired or wireless manner. The wireless manner can be implemented through WIFI, a mobile cellular network, near field communication (NFC), or other technologies. When the computer program is executed by the processor, a defect detection method is implemented. The display unit of the computer device is used to form a visually visible picture, which can be a display screen, a projection device, or a virtual reality imaging device. The display screen can be a liquid crystal display screen or an electronic ink display screen. The input device of the computer device can be a touch layer covering the display screen, or a button, a trackball, or a touchpad provided on the housing of the computer device, or an external keyboard, touchpad, or mouse, etc.

[0174] Those skilled in the art can understand that Figure 9The structure shown is a block diagram of some structures related to the solution of this application, and does not constitute a limitation on the computer device to which the solution of this application is applied. The specific computer device may include more or fewer components than those shown in the figure, or combine certain components, or have different component arrangements.

[0175] In one embodiment, a computer device is further provided, including a memory and a processor. A computer program is stored in the memory, and when the processor executes the computer program, the steps in the above method embodiments are implemented.

[0176] In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the steps in the above method embodiments are implemented.

[0177] In one embodiment, a computer program product is provided, including a computer program. When the computer program is executed by a processor, the steps in the above method embodiments are implemented.

[0178] Those of ordinary skill in the art can understand that all or part of the processes in the methods of the above embodiments can be completed by instructing relevant hardware through a computer program. The computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above methods. Among them, any reference to a memory, database, or other medium used in the embodiments provided in the present application can include at least one of non-volatile memory and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM), etc. The databases involved in the embodiments provided in the present application can include at least one of relational databases and non-relational databases. Non-relational databases can include distributed databases based on blockchain, etc., and are not limited thereto. The processors involved in the embodiments provided in the present application can be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, data processing logics based on quantum computing, artificial intelligence (AI) processors, etc., and are not limited thereto.

[0179] The technical features of the above embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered to be within the scope recorded in the present application.

[0180] The above embodiments only represent several implementation manners of the present application. The description thereof is relatively specific and detailed, but it should not be construed as a limitation on the patent scope of the present application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the appended claims.

Claims

1. A chip defect detection method, characterized in that: The method comprises: Under the condition that frequency domain excitation is applied to both ends of the vertical through hole of the chip to be tested, obtaining the radio frequency transmission characteristics to be tested of the vertical through hole; Based on the radio frequency transmission characteristics to be tested, generating a scattering parameter value to be tested of the vertical through hole, and obtaining a standard scattering parameter value of the vertical through hole, wherein the standard scattering parameter value is a scattering parameter value generated when frequency domain excitation is applied to both ends of the vertical through hole when there is no defect in the chip to be tested; Acquire the difference information of the scattering parameter to be measured between the standard scattering parameter value and the scattering parameter value to be measured; Based on the scattering parameter difference information to be tested, a defect detection result of the chip to be tested is generated.

2. The method according to claim 1, characterized in that: The step of generating a defect detection result of the chip to be tested based on the scattering parameter difference information to be tested comprises: In the case that the defect type matching the scattering parameter difference information to be tested is not detected, determining that the defect detection result of the chip to be tested indicates that there is no defect; When a defect type matching the scattering parameter difference information to be measured is detected, defect degree quantification information of the vertical through hole is generated based on the scattering parameter difference information to be measured, and a defect detection result of the chip to be measured is generated based on the defect type and the defect degree quantification information.

3. The method according to claim 1, characterized in that: In the case where frequency domain excitation is applied to both ends of the vertical through hole of the chip to be tested, before obtaining the radio frequency transmission characteristics to be tested of the vertical through hole, the method further includes: Obtaining a standard scattering parameter value of a vertical through hole in a normal chip, wherein the normal chip is of the same type as the chip to be tested; Performing a reliability test on the vertical through hole in the normal chip to obtain a defective vertical through hole, wherein the defective vertical through hole has at least one defect; Under the condition that frequency domain excitation is applied to both ends of the defective vertical through hole, a defect radio frequency transmission characteristic of the defective vertical through hole is obtained, and based on the defect radio frequency transmission characteristic, a defect scattering parameter value of the defective vertical through hole is generated; Detecting target scattering parameter difference information between the defect scattering parameter value and the standard scattering parameter value, and determining the defect type of the defective vertical through hole; The defect type and the target scattering parameter difference information corresponding to the defect type are associated and stored in a defect database.

4. The method according to claim 1, characterized in that: The radio frequency transmission characteristics to be measured include a first port input voltage and a first port reflection voltage obtained at one end of the vertical through hole, and a second port input voltage and a second port reflection voltage obtained at the other end of the vertical through hole; and generating a scattering parameter value to be measured of the vertical through hole based on the radio frequency transmission characteristics to be measured includes: generating an input reflection coefficient of the vertical through hole based on the first port input voltage and the first port reflection voltage; generating a reverse transmission coefficient of the vertical through hole based on the second port input voltage and the first port reflection voltage; generating a forward transmission coefficient of the vertical through hole based on the first port input voltage and the second port reflection voltage; generating an output reflection coefficient of the vertical through hole based on the second port input voltage and the second port reflection voltage; The input reflection coefficient, the reverse transmission coefficient, the forward transmission coefficient and the output reflection coefficient are collected to obtain the scattering parameter value to be measured of the vertical through hole.

5. The method according to claim 2, characterized in that: The detecting of the defect type matching the scattering parameter difference information to be measured includes: Based on the scattering parameter difference information to be measured, obtaining a change trend difference value between the scattering parameter value to be measured and the standard scattering parameter value, a target scattering parameter difference value between the scattering parameter value to be measured and the standard scattering parameter value at a preset frequency, and a resonant frequency offset amplitude between the scattering parameter value to be measured and the standard scattering parameter value; The defect type that matches the change trend difference value, the target scattering parameter difference value, and the resonance frequency shift amplitude is queried.

6. The method according to claim 2, characterized in that The generating the defect degree quantification information of the vertical through hole based on the scattering parameter difference information to be measured also includes: Based on the scattering parameter difference information to be measured, detecting the variation range of the scattering parameter value, and obtaining the pre-configured scattering parameter value variation range corresponding to each defect degree level; Detecting the target scattering parameter value variation range in which the scattering parameter value variation range is located, and querying the defect degree level corresponding to the target scattering parameter value variation range; The defect level level corresponding to the target scattering parameter value variation range is used as the defect level quantification information of the vertical through hole.

7. A chip defect detection device, characterized in that: The device comprises: A radio frequency transmission characteristic acquisition module, used to acquire the radio frequency transmission characteristics to be tested of the vertical through hole of the chip to be tested when frequency domain excitation is applied to both ends of the vertical through hole of the chip to be tested; a scattering parameter acquisition module, configured to generate a scattering parameter value to be measured of the vertical through hole based on the RF transmission characteristics to be measured, and to obtain a standard scattering parameter value of the vertical through hole, wherein the standard scattering parameter value is a scattering parameter value generated when frequency domain excitation is applied to both ends of the vertical through hole when there is no defect in the chip to be measured; A scattering parameter difference acquisition module, used to acquire the difference information of the scattering parameter to be measured between the standard scattering parameter value and the scattering parameter value to be measured; The defect detection module is used to generate a defect detection result of the chip to be tested based on the difference information of the scattering parameters to be tested.

8. A computer device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 6 are implemented.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 6 are implemented.

10. A computer program product, comprising a computer program, characterized in that When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 6 are implemented.

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