Optical proximity correction method, storage medium and terminal
By detecting and performing local optical proximity correction in optical proximity correction, the problems of device intersection risk and correction accuracy in the prior art are solved, and the effect of improving product yield and process efficiency is achieved.
Patent Information
- Application Number
- CN202311804648.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-25
- Publication Date
- 2025-06-27
AI Technical Summary
The prior art optical proximity correction method improves product yield and process efficiency while improving product yield and process efficiency, it is difficult to effectively reduce the correction accuracy impact of the global correction pattern corresponding to the risk of device intersection.
After the global optical proximity correction, a locally corrected pattern with risk of device intersecting is detected and marked, and a locally optical proximity correction is performed, including translation processing, until the exposure pitch size is greater than or equal to the preset pitch size.
Effectively eliminate the risk of device intersection, improve product yield, and reduce the number of iterations of global optical proximity correction, improve process efficiency, and maintain the correction accuracy of global corrected graphics without device intersection risk.
Smart Images
Figure CN120215197A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor technology, and particularly to an optical proximity correction method, a storage medium, and a terminal. Background Art
[0002] Lithography technology is a crucial technology in semiconductor manufacturing technology. Lithography technology can transfer a pattern from a mask to the surface of a silicon wafer to form a semiconductor product that meets the design requirements. The lithography process includes an exposure step, a development step performed after the exposure step, and an etching step performed after the development step. In the exposure step, light passes through the light-transmitting area of the mask and irradiates the silicon wafer coated with photoresist. The photoresist undergoes a chemical reaction under the irradiation of light. In the development step, based on the different dissolution degrees of the photosensitive and non-photosensitive photoresist in the developer, a lithography pattern is formed to transfer the mask pattern onto the photoresist. In the etching step, the silicon wafer is etched based on the lithography pattern formed by the photoresist layer to further transfer the pattern of the mask onto the silicon wafer.
[0003] In semiconductor manufacturing, as the design size continues to shrink, the design size gets closer and closer to the limit of the lithography imaging system, and the diffraction effect of light becomes more and more obvious, resulting in the degradation of the optical image of the final design pattern. The actually formed lithography pattern is severely distorted relative to the pattern on the mask. Eventually, the actual pattern formed on the silicon wafer through lithography is different from the design pattern. This phenomenon is called the optical proximity effect (OPE: Optical Proximity Effect).
[0004] To correct the optical proximity effect, optical proximity correction (OPC: Optical Proximity Correction) has emerged. The core idea of optical proximity correction is to establish an optical proximity correction model based on the consideration of canceling the optical proximity effect, and design the mask pattern according to the optical proximity correction model. Although the lithography pattern after lithography has an optical proximity effect relative to the mask pattern, since the cancellation of this phenomenon has been considered when designing the mask pattern according to the optical proximity correction model, the lithography pattern after lithography is close to the target pattern that the user actually hopes to obtain.
[0005] However, there are still many problems in the optical proximity correction of the prior art. Summary of the Invention
[0006] The technical problem solved by the present invention is to provide an optical proximity correction method, a storage medium, and a terminal, improve the product yield and the process efficiency, and reduce the influence on the correction accuracy of the global correction pattern corresponding to the risk of device cross-linking.
[0007] To solve the above technical problems, the technical solution of the present invention provides an optical proximity correction method, including: providing a target layout, where the target layout has several target patterns; performing global optical proximity correction on the target layout to obtain global correction patterns of each of the target patterns; after the global optical proximity correction, obtaining exposure patterns of each of the global correction patterns; detecting adjacent exposure patterns whose exposure spacing size is less than a preset spacing size, and marking the global correction patterns corresponding to the adjacent exposure patterns as a first local correction pattern and a second local correction pattern to be locally optically proximity corrected; performing the local optical proximity correction on the first local correction pattern and the second local correction pattern; where the local optical proximity correction includes: performing at least one translation process on the first local correction pattern and the second local correction pattern until the exposure spacing size is greater than or equal to the preset spacing size; where each translation process includes: translating the first local correction pattern in a direction away from the second local correction pattern; translating the second local correction pattern in a direction away from the first local correction pattern.
[0008] Optionally, in the first translation process, translate the first local correction pattern in a direction away from the second local correction pattern by a reference size; translate the second local correction pattern in a direction away from the first local correction pattern by the reference size.
[0009] Optionally, in each translation process after the first time, taking the first local correction pattern after the previous translation process as a reference, translate the first local correction pattern in a direction away from the second local correction pattern by a fixed step size increment each time; taking the second local correction pattern after the previous translation process as a reference, translate the second local correction pattern in a direction away from the first local correction pattern by the fixed step size increment each time.
[0010] Optionally, in each translation process after the first time, translate the first local correction pattern in a direction away from the second local correction pattern by an increasing size; translate the second local correction pattern in a direction away from the first local correction pattern by the increasing size; the difference between the increasing sizes of adjacent translation processes or between the increasing size and the reference size is a fixed step size.
[0011] Optionally, before the translation process, it further includes: obtaining an exposure deviation size, where the exposure deviation size is the difference between the preset spacing size and the exposure spacing size; the translation size in each translation process is associated with the exposure deviation size.
[0012] Optionally, the reference dimension is 35% - 45% of the exposure deviation dimension.
[0013] Optionally, the fixed step size dimension is 8% - 12% of the exposure deviation dimension.
[0014] Optionally, both the first local correction pattern and the second local correction pattern are rectangles, and the first local correction pattern and the second local correction pattern are arranged in parallel along a first direction.
[0015] Optionally, the method of the translation process includes: translating a first side and a second side that are distributed along the first direction and opposite to each other in the first local correction pattern away from the second local correction pattern; after the first side and the second side are translated, a third side and a fourth side that extend along the first direction and are opposite to each other in the first local correction pattern are hermetically sealed with the first side and the second side respectively adaptively to form a closed figure; translating a fifth side and a sixth side that are distributed along the first direction and opposite to each other in the second local correction pattern away from the first local correction pattern; after the fifth side and the sixth side are translated, a seventh side and an eighth side that extend along the first direction and are opposite to each other in the second local correction pattern are hermetically sealed with the fifth side and the sixth side respectively adaptively to form a closed figure.
[0016] Correspondingly, the technical solution of the present invention also provides a storage medium, on which computer instructions are stored, and when the computer instructions run, they execute the steps of the method described in any one of the above technical solutions.
[0017] Correspondingly, the technical solution of the present invention also provides a terminal, including a memory and a processor, computer instructions capable of running on the processor are stored on the memory, and when the processor runs the computer instructions, it executes the steps of the method described in any one of the above technical solutions.
[0018] Compared with the prior art, the technical solution of the embodiment of the present invention has the following beneficial effects:
[0019] In the optical proximity correction method provided by the technical solution of the present invention, after the global optical proximity correction based on the model, the first local correction pattern and the second local correction pattern corresponding to the device cross - connection risk are detected and marked, and the local optical proximity correction based on rules is performed on the first local correction pattern and the second local correction pattern until the exposure pitch size is greater than or equal to the preset pitch size, so as to eliminate the device cross - connection risk and improve the product yield. In addition, by combining the global optical proximity correction and the local optical proximity correction, the iteration times of the global optical proximity correction can be effectively reduced, the process efficiency can be improved, and the correction accuracy of the global correction patterns corresponding to the other parts without device cross - connection risk will not be affected.
[0020] Further, before the translation process, it further includes: obtaining an exposure deviation size, where the exposure deviation size is the difference between the preset pitch size and the exposure pitch size; the translation size in each translation process is associated with the exposure deviation size. Since the exposure pitch size has a strong correlation with the pitch size between the first local correction pattern and the second local correction pattern. Therefore, by using the exposure deviation size as a reference for the translation size in the translation process, it has strong guidance to enable the local optical proximity correction to achieve the purpose of rapid convergence, thereby improving the efficiency of optical proximity correction.
[0021] Further, the method of the translation process includes: translating the first side and the second side distributed along the first direction and opposite to each other in the first local correction pattern away from the second local correction pattern; after the first side and the second side are translated, the third side and the fourth side extending along the first direction and opposite to each other in the first local correction pattern adaptively seal with the first side and the second side respectively to form a closed figure; translating the fifth side and the sixth side distributed along the first direction and opposite to each other in the second local correction pattern away from the first local correction pattern; after the fifth side and the sixth side are translated, the seventh side and the eighth side extending along the first direction and opposite to each other in the second local correction pattern adaptively seal with the fifth side and the sixth side respectively to form a closed figure. By screening out the sides that need to be translated in the first local correction pattern and the second local correction pattern, filtering out the sides that do not need to be translated, and forming a closed figure in an adaptive manner, the error caused by the overall movement of the first local correction pattern and the second local correction pattern can be reduced. Description of the Drawings
[0022] Figure 1 and Figure 2 are schematic structural diagrams of the steps of an optical proximity correction method;
[0023] Figure 3 is a flowchart of the optical proximity correction method according to an embodiment of the present invention;
[0024] Figures 4 to 7 is a schematic structural diagram of each step of the optical proximity correction method according to an embodiment of the present invention. Detailed implementation manners
[0025] As described in the background art, there are still many problems in the optical proximity correction of the prior art. The following will be specifically described with reference to the drawings.
[0026] Figure 1 and Figure 2 a schematic structural diagram of the process of an optical proximity correction method.
[0027] Please refer to Figure 1 , a target layout 100 is provided, and the target layout 100 has a plurality of target patterns 101.
[0028] Please refer to Figure 2 , perform global optical proximity correction on the target layout 100 to obtain global correction patterns 102 of each of the target patterns 101; after the global optical proximity correction, obtain exposure patterns 103 of each of the global correction patterns 102.
[0029] Among many of the global correction patterns 102, there often occurs a problem that the exposure spacing dimension D1 between the corresponding adjacent exposure patterns 103 after exposure is too close (less than a preset spacing dimension). For such problems of the global correction patterns 102, the global optical proximity correction based on a model cannot be completely solved, and if such global correction patterns 102 are applied to an actual manufacturing process, it is very easy to cause bridging between devices, which greatly affects the yield of the product. In addition, if it is considered to increase the number of iterations of the global optical proximity correction to reduce the risk of device bridging, it will not only affect the process efficiency, but also affect the correction accuracy of the other global correction patterns 102 that do not have the risk of device bridging.
[0030] To solve the above technical problems, the technical solution of the present invention provides an optical proximity correction method, a storage medium, and a terminal. After the global optical proximity correction based on the model, the first local correction pattern and the second local correction pattern corresponding to the device cross - connection risk are detected and marked, and the local optical proximity correction based on rules is performed on the first local correction pattern and the second local correction pattern until the exposure pitch size is greater than or equal to the preset pitch size, so as to eliminate the device cross - connection risk and improve the yield of the product. In addition, by combining the global optical proximity correction and the local optical proximity correction, the number of iterations of the global optical proximity correction can be effectively reduced, the process efficiency can be improved, and the correction accuracy of the remaining global correction patterns that do not correspond to the device cross - connection risk will not be affected.
[0031] To make the above objects, features, and beneficial effects of the present invention more obvious and understandable, the following detailed description of the specific embodiments of the present invention will be given in conjunction with the accompanying drawings.
[0032] Figure 3 It is a flowchart of the optical proximity correction method according to an embodiment of the present invention, including:
[0033] Step S101: Provide a target layout, where the target layout has a number of target patterns;
[0034] Step S102: Perform global optical proximity correction on the target layout to obtain the global correction patterns of each target pattern;
[0035] Step S103: After the global optical proximity correction, obtain the exposure patterns of each global correction pattern;
[0036] Step S104: Detect adjacent exposure patterns whose exposure pitch size is less than the preset pitch size, and mark the global correction patterns corresponding to the adjacent exposure patterns as the first local correction pattern and the second local correction pattern to be locally optically proximity - corrected;
[0037] Step S105: Perform the local optical proximity correction on the first local correction pattern and the second local correction pattern; wherein, the local optical proximity correction includes: performing at least one translation process on the first local correction pattern and the second local correction pattern until the exposure pitch size is greater than or equal to the preset pitch size; wherein, each translation process includes: translating the first local correction pattern in a direction away from the second local correction pattern; translating the second local correction pattern in a direction away from the first local correction pattern.
[0038] The following will give a detailed description of each step of the optical proximity correction method in conjunction with the accompanying drawings.
[0039] Figures 4 to 7 It is a structural schematic diagram of each step in the specific process of the optical proximity correction method according to an embodiment of the present invention.
[0040] Please refer to Figure 4 , a target layout 200 is provided, and the target layout 200 has a plurality of target patterns 201.
[0041] It should be noted that each of the target patterns 201 in the target layout 200 is an initial pattern without any optical proximity correction. Theoretically, in the absence of optical proximity effects, each of the target patterns 201 is the same as the corresponding exposed pattern obtained after subsequent exposure.
[0042] Please refer to Figure 5 , perform global optical proximity correction on the target layout 200 to obtain global correction patterns 202 of each of the target patterns 201.
[0043] The global optical proximity correction is a model-based optical proximity correction. For the target layout 200, all of the target patterns 201 in the target layout 200 need to be subjected to optical proximity correction.
[0044] It should be noted that during the process of the global optical proximity correction, only a small number of iteration times are required to make most of the global correction patterns 202 converge (that is, the corresponding exposed patterns have no risk of device cross-linking), while only a small number of the global correction patterns 202 do not converge.
[0045] Please continue to refer to Figure 5 , after the global optical proximity correction, obtain exposed patterns 203 of each of the global correction patterns 202.
[0046] The method for the exposed patterns 203 is obtained by performing simulated exposure on each of the target patterns 201 after the global optical proximity correction.
[0047] Please refer to Figure 6 , detect adjacent exposed patterns 203 whose exposure pitch size D1 is less than a preset pitch size D2, and mark the global correction patterns 202 corresponding to the adjacent exposed patterns 203 as a first local correction pattern 204 and a second local correction pattern 205 to be locally optically proximally corrected.
[0048] Since when the exposure pitch size D1 between adjacent exposure patterns 203 is less than the preset pitch size D2, if it is applied to the actual manufacturing process, there is an easy risk of device cross - connection. Therefore, the corresponding global correction pattern 202 detection marks need to be marked out for subsequent local optical proximity correction until the risk of device cross - connection is eliminated.
[0049] In this embodiment, both the first local correction pattern 204 and the second local correction pattern 205 are rectangles, and the first local correction pattern 204 and the second local correction pattern 205 are arranged in parallel along the first direction X.
[0050] In other embodiments, the first local correction pattern and the second local correction pattern can also be in other forms other than rectangles.
[0051] Please refer to Figure 7 , perform local optical proximity correction on the first local correction pattern 204 and the second local correction pattern 205; the local optical proximity correction includes: performing at least one translation process on the first local correction pattern 204 and the second local correction pattern 205 until the exposure pitch size D1 is greater than or equal to the preset pitch size D2.
[0052] Please continue to refer to Figure 7 , each translation process includes: translating the first local correction pattern 204 in a direction away from the second local correction pattern 205; translating the second local correction pattern 205 in a direction away from the first local correction pattern 204.
[0053] By detecting and marking out the first local correction pattern 204 and the second local correction pattern 205 corresponding to the risk of device cross - connection after the global optical proximity correction based on the model, and performing rule - based local optical proximity correction on the first local correction pattern 204 and the second local correction pattern 205 until the exposure pitch size D1 is greater than or equal to the preset pitch size D2, the risk of device cross - connection is eliminated, thereby improving the product yield. In addition, by combining the global optical proximity correction and the local optical proximity correction, the iteration times of the global optical proximity correction can be effectively reduced, the manufacturing efficiency can be improved, and the correction accuracy of the remaining global correction patterns 202 that do not correspond to the risk of device cross - connection will not be affected.
[0054] In the first translation process, translate the first partial correction pattern 204 in the direction away from the second partial correction pattern 205 by a reference dimension; translate the second partial correction pattern 205 in the direction away from the first partial correction pattern 204 by the reference dimension.
[0055] In this embodiment, in each translation process after the first one, taking the first partial correction pattern 204 after the previous translation process as a reference, translate the first partial correction pattern 204 in the direction away from the second partial correction pattern 205 by a fixed step size dimension that increases successively each time; taking the second partial correction pattern 205 after the previous translation process as a reference, translate the second partial correction pattern 205 in the direction away from the first partial correction pattern 204 by the fixed step size dimension that increases successively each time.
[0056] Before the translation process, it further includes: obtaining an exposure deviation dimension D3, where the exposure deviation dimension D3 is the difference between the preset spacing dimension D2 and the exposure spacing dimension D1; the translation dimension in each translation process is associated with the exposure deviation dimension D3.
[0057] Since the exposure spacing dimension D1 has a strong correlation with the spacing dimension between the first partial correction pattern 204 and the second partial correction pattern 205. Therefore, using the exposure deviation dimension D3 as a reference for the translation dimension in the translation process has strong guidance, so as to achieve the purpose of rapid convergence of the local optical proximity correction and improve the efficiency of optical proximity correction.
[0058] In other embodiments, the translation dimension can also be set by itself based on empirical rules.
[0059] The reference dimension is 35% - 45% of the exposure deviation dimension D3; the fixed step size dimension is 8% - 12% of the exposure deviation dimension D3.
[0060] In this embodiment, the reference dimension is selected as 40% of the exposure deviation dimension D3, and the fixed step size dimension is selected as 10% of the exposure deviation dimension D3.
[0061] In a specific example, after conventional lithography simulation, the exposure pitch size D1 between adjacent exposure patterns 203 is detected to be 36.8 nm, while the set preset pitch size D2 is 38 nm. Therefore, the corresponding exposure deviation size D3 is 38 nm - 36.8 nm = 1.2 nm. At this time, the first translation process needs to be performed, that is, the corresponding first local correction pattern 204 and the second local correction pattern 205 are respectively translated by 1.2 nm * 40% = 0.48 nm in the opposite direction. After the first translation process, exposure detection is performed again, and it is measured that the exposure pitch size D1 is still smaller than the preset pitch size D2. At this time, the second translation process needs to be performed. The second translation process is based on the first local correction pattern 204 after the first translation process, and the first local correction pattern 204 is translated by a fixed step size of 1.2 nm * 10% = 0.12 nm in the direction away from the second local correction pattern 205. Correspondingly, the second translation process is based on the second local correction pattern 205 after the first translation process, and the second local correction pattern 205 is translated by a fixed step size of 1.2 nm * 10% = 0.12 nm in the direction away from the first local correction pattern 204. After two translation processes, the first local correction pattern 204 and the second local correction pattern 205 are respectively translated by a total of 0.48 nm + 0.12 nm = 0.6 nm. By performing exposure detection again, it is measured that the exposure pitch size D1 is 41.2 nm, which is greater than the preset pitch size D2, achieving the required technical effect, and the translation process is no longer performed.
[0062] It should be noted that if after the second translation process, the exposure pitch size D1 is still smaller than the preset pitch size D2, then the third translation process needs to be performed. The third translation process continues to be based on the second translation process, and the first local correction pattern 204 and the second local correction pattern 205 are respectively translated by 0.12 nm in the opposite direction. That is, after three translation processes, the first local correction pattern 204 and the second local correction pattern 205 are translated by a total of 0.48 nm + 0.12 nm + 0.12 nm = 0.72 nm. And so on, until the exposure pitch size D1 is greater than or equal to the preset pitch size D2.
[0063] In other embodiments, in each of the translation processes after the first time, the first partial correction pattern may also be translated with an increasing size in a direction away from the second partial correction pattern; the second partial correction pattern may be translated with the increasing size in a direction away from the first partial correction pattern; the difference between the increasing sizes of adjacent translation processes or between the increasing size and the reference size is a fixed step size; wherein the acquisition and value of the reference size and the fixed step size are the same as those in the above embodiments.
[0064] For example, in a specific example, after conventional lithography simulation, it is detected that the exposure pitch size D1 between adjacent exposure patterns 203 is 36.8 nm, while the set preset pitch size D2 is 38 nm. Therefore, the corresponding exposure deviation size D3 is 38 nm - 36.8 nm = 1.2 nm. At this time, the first translation process needs to be performed, that is, the corresponding first partial correction pattern and the second partial correction pattern are respectively translated 1.2 nm * 40% = 0.48 nm in opposite directions. After the first translation process, exposure detection is performed again, and it is measured that the exposure pitch size D1 is still smaller than the preset pitch size D2. At this time, the second translation process needs to be performed. The second translation process is to translate the first partial correction pattern with an increasing size in a direction away from the second partial correction pattern, and the difference between the increasing size of the second translation process and the reference size of the first translation process is a fixed step size, that is, the increasing size of the second translation process is 0.48 nm + 0.12 nm = 0.6 nm. However, it should be noted that the second translation process is based on the position of the first partial correction pattern without any translation process. Correspondingly, the second partial correction pattern is translated with the increasing size of 0.48 nm + 0.12 nm = 0.6 nm in a direction away from the first partial correction pattern, and the second translation process is based on the position of the second partial correction pattern without any translation process. After two translation processes, the first partial correction pattern and the second partial correction pattern are respectively translated 0.6 nm. By performing exposure detection again, it is measured that the exposure pitch size D1 is 41.2 nm, which is greater than the preset pitch size D2, achieving the required technical effect, and the translation process is no longer performed.
[0065] It should be noted that if the exposure spacing dimension D1 is still smaller than the preset spacing dimension D2 after the second translation process, a third translation process is required. The difference between the increment dimension of the third translation process and the increment dimension of the second translation process is the fixed step size dimension of 0.12 nm. That is, the increment dimension of the third translation process is 0.6 nm + 0.12 = 0.72 nm, and the third translation process is based on the positions of the first partial correction pattern and the second partial correction pattern without any translation process. And so on until the exposure spacing dimension D1 is greater than or equal to the preset spacing dimension D2.
[0066] Please continue to refer to Figure 7 , the method of the translation process includes: translating the first side L1 and the second side L2 that are distributed along the first direction X and are opposite to each other in the first partial correction pattern 204 away from the second partial correction pattern 205; after the first side L1 and the second side L2 are translated, the third side L3 and the fourth side L4 that extend along the first direction X and are opposite to each other in the first partial correction pattern 204 are adaptively sealed with the first side L1 and the second side L2 respectively to form a closed figure; translating the fifth side L5 and the sixth side L6 that are distributed along the first direction X and are opposite to each other in the second partial correction pattern 205 away from the first partial correction pattern 204; after the fifth side L5 and the sixth side L6 are translated, the seventh side L7 and the eighth side L8 that extend along the first direction X and are opposite to each other in the second partial correction pattern 205 are adaptively sealed with the fifth side L5 and the sixth side L6 respectively to form a closed figure.
[0067] By screening out the sides that need to be translated in the first partial correction pattern 204 and the second partial correction pattern 205, filtering out the sides that do not need to be translated, and forming a closed figure in an adaptive manner, the error caused by the overall movement of the first partial correction pattern 204 and the second partial correction pattern 205 can be reduced.
[0068] Correspondingly, an embodiment of the present invention also provides a storage medium on which computer instructions are stored, and when the computer instructions run, they execute the steps of the method described in any one of the above embodiments.
[0069] Correspondingly, an embodiment of the present invention also provides a terminal, including a memory and a processor. The memory stores computer instructions that can run on the processor, and when the processor runs the computer instructions, it executes the steps of the method described in any one of the above embodiments.
[0070] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.
Claims
1. An optical proximity correction method, characterized in that Including: Providing a target layout, where the target layout has a number of target patterns; Performing global optical proximity correction on the target layout to obtain global correction patterns of each of the target patterns; After the global optical proximity correction, obtaining exposure patterns of each of the global correction patterns; Detecting adjacent exposure patterns whose exposure pitch size is smaller than a preset pitch size, and marking the global correction patterns corresponding to the adjacent exposure patterns as a first local correction pattern and a second local correction pattern to be locally optically proximity corrected; Performing the local optical proximity correction on the first local correction pattern and the second local correction pattern; wherein, the local optical proximity correction includes: Performing at least one translation process on the first local correction pattern and the second local correction pattern until the exposure pitch size is greater than or equal to the preset pitch size; Wherein, each translation process includes: Translating the first local correction pattern in a direction away from the second local correction pattern; Translating the second local correction pattern in a direction away from the first local correction pattern.
2. The optical proximity correction method according to claim 1, wherein In the first translation process, translating the first local correction pattern in a direction away from the second local correction pattern by a reference size; translating the second local correction pattern in a direction away from the first local correction pattern by the reference size.
3. The optical proximity correction method according to claim 2, characterized in that, In each translation process after the first one, taking the first local correction pattern after the previous translation process as a reference, translating the first local correction pattern in a direction away from the second local correction pattern by a fixed step size incremented successively each time; Taking the second local correction pattern after the previous translation process as a reference, translating the second local correction pattern in a direction away from the first local correction pattern by the fixed step size incremented successively each time.
4. The optical proximity correction method according to claim 2, wherein In each translation process after the first one, translating the first local correction pattern in a direction away from the second local correction pattern by an increasing size; Translating the second local correction pattern in a direction away from the first local correction pattern by the increasing size; the difference between the increasing sizes of adjacent translation processes, or between the increasing size and the reference size, is a fixed step size.
5. The optical proximity correction method according to claim 3 or 4, characterized in that, Before the translation process, further including: obtaining an exposure deviation size, where the exposure deviation size is the difference between the preset pitch size and the exposure pitch size; the translation size in each translation process is associated with the exposure deviation size.
6. The optical proximity correction method according to claim 5, characterized in that The reference size is 35% - 45% of the exposure deviation size.
7. The optical proximity correction method according to claim 5, wherein The fixed step size is 8% - 12% of the exposure deviation size.
8. The optical proximity correction method according to claim 1, wherein Both the first local correction pattern and the second local correction pattern are rectangles, and the first local correction pattern and the second local correction pattern are arranged in parallel along a first direction.
9. The optical proximity correction method according to claim 8, wherein The method of the translation processing includes: translating the first side and the second side that are distributed along the first direction and opposite to each other in the first partial correction graph in a direction away from the second partial correction graph; after the first side and the second side are translated, the third side and the fourth side that extend along the first direction and are opposite to each other in the first partial correction graph are hermetically sealed with the first side and the second side respectively adaptively to form a closed graph; translating the fifth side and the sixth side that are distributed along the first direction and opposite to each other in the second partial correction graph in a direction away from the first partial correction graph; after the fifth side and the sixth side are translated, the seventh side and the eighth side that extend along the first direction and are opposite to each other in the second partial correction graph are hermetically sealed with the fifth side and the sixth side respectively adaptively to form a closed graph.
10. A storage medium, on which computer instructions are stored, characterized in that, When the computer instructions run, the steps of the method according to any one of claims 1 to 9 are executed.
11. A terminal, comprising a memory and a processor, wherein computer instructions capable of running on the processor are stored on the memory, characterized in that, When the processor runs the computer instructions, the steps of the method according to any one of claims 1 to 9 are executed.