Path-optimized MOSFET chip signal transmission system

Abstract

The invention discloses a path-optimized MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) chip signal transmission system, and relates to the technical field of circuit signal transmission. The system comprises a processing unit and a block chip, the block chip is formed by arranging and distributing a plurality of amplifying circuits in the x-axis direction, the y-axis direction and the z-axis direction, the system further comprises a stacking control unit, and the stacking control unit comprises an x-axis control module, a y-axis control module and a z-axis control module. The processing unit respectively sends a control instruction to the x-axis control module, the y-axis control module and the z-axis control module, the x-axis control module, the y-axis control module and the z-axis control module select internal paths of block chips, a plurality of MOSFETs are arranged and distributed between every two amplification circuits, and the system comprises a temperature sensor and an acquisition unit. According to the invention, the stability of data transmission can be ensured by simulating noise information in a simulation circuit, generating an optimal path and collecting actual data to correct a simulation result.

Description

Technical Field

[0001] The present invention relates to the technical field of circuit signal transmission, and specifically to a signal transmission system for a MOSFET chip with optimized path. Background Art

[0002] MOSFET is a metal-oxide-semiconductor field-effect transistor. The MOSFET chip is an important semiconductor device, also known as a MOS transistor. It is widely used in electronic circuits, such as power management, motor drive, power amplification and other fields. The MOSFET chip usually consists of a source electrode, a drain electrode, a gate electrode, etc. By controlling the gate voltage, the current between the drain electrode and the source electrode is adjusted. It is a voltage-controlled device. Compared with the bipolar transistor which is a current-controlled device, it has the advantages of high input impedance, fast switching speed, good thermal stability, etc. In actual applications, the noise problem of the MOS transistor will indirectly affect the signal transmission quality of the MOS transistor, mainly including the following types: 1. Thermal noise, caused by the random thermal motion of electrons in a conductor, which is proportional to the temperature; 2. Flicker noise, mainly 1 / f low-frequency noise, whose amplitude is inversely proportional to the frequency; 3. Shot noise, related to the discrete charge when current passes through the device; These noises will be superimposed on the signal transmitted by the MOS transistor, affecting the quality and accuracy of the signal. In some application scenarios with high requirements for signal accuracy, special attention and treatment are needed.

[0003] Since thermal noise is the regular noise information in the circuit, the thermal noise information can be suppressed by reducing unnecessary resistors and heating elements. Flicker noise is the random and irregular noise information in the circuit, and the influence of thermal noise can be suppressed or reduced by appropriate signal processing means such as filtering. However, in order to ensure the stability of signal transmission, an amplifier circuit will be set in the circuit to enhance the signal, but at the same time, the noise information in the circuit will also be increased synchronously. Moreover, the overlap of thermal noise and flicker noise in the circuit will increase the difficulty of noise suppression. Therefore, it is a technical problem that needs to be solved by those skilled in the art to simulate the noise information through simulation technology to generate the optimal path and collect relevant data to correct the path simulation results. Summary of the Invention

[0004] Aiming at the deficiencies of the prior art, the present invention provides a signal transmission system for a MOSFET chip with optimized path, which solves the problems put forward in the above background art.

[0005] To achieve the above objectives, the present invention is implemented through the following technical solutions: a path-optimized MOSFET chip signal transmission system, comprising a processing unit and a block chip, wherein the block chip is composed of a plurality of amplifying circuits arranged and distributed in three directions of an x-axis, a y-axis and a z-axis, and further comprising a stacking control unit, wherein the stacking control unit comprises an x-axis control module, a y-axis control module and a z-axis control module, wherein the processing unit sends control instructions to the x-axis control module, the y-axis control module and the z-axis control module respectively, and the x-axis control module, the y-axis control module and the z-axis control module select the internal path of the block chip, wherein a plurality of MOSFETs are arranged and distributed between the amplifying circuits;

[0006] It includes a temperature sensor and a collection unit, wherein the temperature sensor obtains ambient temperature information and transmits it to the processing unit, the collection unit obtains internal data information of the block chip, and the collection unit transmits the internal data information of the block chip to the processing unit;

[0007] Also includes a memory, the processing unit converts the received internal path of the block chip into a path table and transfers it to the memory, the processing unit analyzes the received power spectrum density and transfers the analysis data to the memory, and the memory also stores a computer program or instruction for the processing unit to execute;

[0008] The internal path optimization of the block chip specifically includes the following steps:

[0009] Step 1: Path scanning, the processing unit controls the stack control unit to start, and the x-axis control module, the y-axis control module and the z-axis control module scan the inside of the block chip path by path, and the acquisition unit records the amplifier circuit information and MOSFET information of each path scan and forwards it to the processing unit, and the processing unit performs data analysis and saves the analysis results;

[0010] Step 2: Simulation, the temperature sensor transmits the collected ambient temperature information to the processing unit, the processing unit simulates the circuit information and MOSFET information according to the received ambient temperature information, calculates and analyzes the optimal path under different ambient temperatures and information bandwidths, and saves it;

[0011] Step 3: Error correction and noise reduction. The processing unit sends the optimal path to the stacking control unit according to the ambient temperature and information bandwidth. The stacking control unit executes the optimal path to the block chip. The acquisition unit obtains the noise information inside the block chip and transmits it to the processing unit. The processing unit analyzes the noise information and corrects the optimal path.

[0012] Furthermore, the path scanning specifically includes the following steps:

[0013] Step 101: The processing unit sends a path scanning instruction to the stacking control unit. The stacking control unit is activated. The x-axis control module performs sequential switching tests on the amplifier circuit and the MOSFET along the x-axis direction. The y-axis control module performs sequential switching tests on the amplifier circuit and the MOSFET along the y-axis direction. The z-axis control module performs sequential switching tests on the amplifier circuit and the MOSFET along the z-axis direction;

[0014] Step 102: The acquisition module obtains the flicker noise value, frequency information, and gate oxide layer value of the amplifier circuit and the MOSFET during the MOSFET switching test. The acquisition module obtains the temperature information, resistance information, and position information of the amplifier circuit during the amplifier circuit switching test. The acquisition module transmits the flicker noise value, frequency information, gate oxide layer value, and MOSFET position information of the MOSFET to the processing unit. The acquisition module transmits the temperature information, resistance information, and amplifier circuit position information of the amplifier circuit to the processing unit;

[0015] Step 103: The processing unit divides the process index by the flicker noise value to obtain the parameter index. The process index is related to the MOSFET production process and is generally a constant 10 -25 , the processing unit calculates the product of the frequency information and the gate oxide layer value, and then divides the parameter index by the product to obtain the area index corresponding to the MOSFET. The area index refers to the product of the length and width of the MOSFET area and is one of the factors affecting the MOSFET flicker noise;

[0016] Step 104: The processing unit matches the MOSFET area index with the corresponding MOSFET position information and transfers each MOSFET area index and MOSFET position information to the memory;

[0017] Step 105: The processing unit calculates the thermal noise information in the amplifier circuit based on the temperature information and resistance information of the amplifier circuit. The processing unit matches the thermal noise information with the corresponding amplifier circuit position information and transfers the thermal noise information and amplifier circuit position information of each amplifier circuit to the memory.

[0018] Further, the simulation specifically includes the following steps:

[0019] Step 201: The temperature sensor transmits the ambient temperature information to the processing unit. The processing unit calculates the optimal path of the current ambient temperature by integrating the ambient temperature information, the thermal noise information of the amplifier circuit, and the MOSFET area index;

[0020] Step 202: High and low temperature simulation. Taking the environmental temperature obtained by the acquisition unit as a reference, the high and low temperature range is ±45 degrees Celsius. The processing unit simulates the high-temperature environmental temperature. For each degree increase in the environmental temperature, the processing unit simulates the thermal noise information of each amplifier circuit in the block chip, and modifies the optimal path obtained in Step 201 according to the area index of each MOSFET to minimize the sum of the internal thermal noise and flicker noise of the block chip. At the same time, the processing unit simulates the low-temperature environmental temperature. For each degree decrease in the environmental temperature, the processing unit simulates the thermal noise information of each amplifier circuit in the block chip, and modifies the optimal path obtained in Step 201 according to the area index of each MOSFET to minimize the sum of the internal thermal noise and flicker noise of the block chip. The processing unit stores the simulated high and low environmental temperatures and the corresponding optimal paths in the memory;

[0021] Step 203: Heating and cooling simulation. Taking the environmental temperature obtained by the acquisition unit as a reference, the heating and cooling range is ±10 degrees Celsius. The processing unit simulates the heating environmental temperature. For each degree increase in the environmental temperature, it is marked as a new heating range. In the new heating range, the processing unit simulates the thermal noise information of each amplifier circuit in the block chip, and modifies the optimal path obtained in Step 201 according to the area index of each MOSFET to minimize the sum of the internal thermal noise and flicker noise of the block chip. At the same time, the processing unit simulates the cooling environmental temperature. For each degree decrease in the environmental temperature, it is marked as a new cooling range. In the new cooling range, the processing unit simulates the thermal noise information of each amplifier circuit in the block chip, and modifies the optimal path obtained in Step 201 according to the area index of each MOSFET to minimize the sum of the internal thermal noise and flicker noise of the block chip. The processing unit stores the simulated heating and cooling environmental temperatures and the corresponding optimal paths in the memory.

[0022] Further, the error correction and noise reduction specifically includes the following steps:

[0023] Step 301: The temperature sensor collects environmental temperature information and transmits it to the processing unit. The processing unit calculates the optimal path inside the current block chip according to the received environmental temperature information and sends it to the stacking control unit;

[0024] Step 302: The stacking control unit executes the optimal path. The acquisition unit obtains information starting from the output end of the block chip in reverse order, and sequentially collects the temperature information, resistance information, and position information of each amplifier circuit, and at the same time sequentially collects the flicker noise value, frequency information, gate oxide layer value, and MOSFET position information of each MOSFET until the acquisition unit has collected all the amplifier circuits and MOSFETs inside the block chip. The acquisition unit uniformly transmits the collected information back to the processing unit;

[0025] Step 303: The processing unit counts the number of amplifier circuits in the received optimal path, and determines the noise rating between each pair of amplifier circuits in the optimal path according to the number of amplifier circuits. The closer the path is to the output end, the more circuit noise is generated by the gradual amplification of multiple amplifier circuits in the circuit, and the greater the impact on the quality of the output signal. The processing unit performs a weighted calculation on the noise between each pair of amplifier circuits according to the rating determination. The specific value of the weighting coefficient involved in the weighted calculation is determined according to the impact of the actual circuit noise on the circuit signal quality. The circuit noise is the sum of the thermal noise and the flicker noise in the circuit;

[0026] Step 304: The processing unit re-determines the optimal path according to the noise values between each pair of amplifier circuits after the weighted calculation. At the same time, the processing unit transmits the information of the re-determined optimal path to the stacking control unit, and the stacking control unit modifies the internal path of the block chip. The processing unit saves the corrected optimal path together with the corresponding ambient temperature information to the memory, replacing the simulated optimal path saved in step 2.

[0027] Further, when the ambient temperature acquired by the temperature sensor changes, the temperature sensor transmits the acquired temperature information to the processing unit. The processing unit queries the temperature record from the memory. If the ambient temperature newly acquired by the temperature sensor has not been recorded in the memory, the processing unit sequentially executes steps 301 to 304 to calculate the circuit noise information at the new ambient temperature and correct the optimal path simulated in step 2. The processing unit matches the corrected optimal path information with the newly acquired ambient temperature and transfers it to the memory for storage.

[0028] Further, the x-axis control module controls the opening and closing of the circuit between the amplifier circuit and the MOSFET in the x-axis direction. The disconnection of the connection between the two MOSFETs in the x-axis direction is also controlled by the x-axis control module. The y-axis control module controls the opening and closing of the circuit between the amplifier circuit and the MOSFET in the y-axis direction. The disconnection of the connection between the two MOSFETs in the y-axis direction is also controlled by the y-axis control module. The z-axis control module controls the opening and closing of the circuit between the amplifier circuit and the MOSFET in the z-axis direction. The disconnection of the connection between the two MOSFETs in the z-axis direction is also controlled by the z-axis control module.

[0029] The present invention has the following beneficial effects:

[0030] 1. By simulating the noise information in the circuit and generating the optimal path, and correcting the simulated optimal path by collecting actual data, the stability of data transmission can be ensured at different ambient temperatures.

[0031] 2. The stacking control unit controls the block chip in three-dimensional dimensions of the x-axis, y-axis, and z-axis. On the one hand, it can scan the internal circuit of the block chip to provide a data basis for simulation. On the other hand, it can refine and amplify the control accuracy of the circuit and MOSFET, and can accurately execute the optimal path.

[0032] Of course, it is not necessary for any product implementing the present invention to achieve all the above-mentioned advantages simultaneously. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0034] Figure 1 It is a block diagram of a signal transmission system of a MOSFET chip with path optimization according to the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0035] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present invention.

[0036] Please refer to Figure 1 , the present invention provides a technical solution: a signal transmission system of a MOSFET chip with path optimization, including a processing unit and a block chip. The block chip is composed of a number of amplifier circuits arranged and distributed in three directions of the x-axis, y-axis, and z-axis. It further includes a stacking control unit. The stacking control unit includes an x-axis control module, a y-axis control module, and a z-axis control module. The processing unit respectively sends control instructions to the x-axis control module, the y-axis control module, and the z-axis control module. The x-axis control module, the y-axis control module, and the z-axis control module select the internal path of the block chip. A number of MOSFETs are arranged and distributed between two adjacent amplifier circuits, which can refine and amplify the control accuracy of the amplifier circuit and MOSFET, and can accurately execute the optimal path;

[0037] It includes a temperature sensor and a collection unit. The temperature sensor obtains the ambient temperature information and transmits it to the processing unit. The collection unit obtains the internal data information of the block chip, and the collection unit transmits the internal data information of the block chip to the processing unit;

[0038] Also includes a memory, the processing unit converts the received internal path of the block chip into a path table and transfers it to the memory, the processing unit analyzes the received power spectrum density and transfers the analysis data to the memory, and the memory also stores a computer program or instruction for the processing unit to execute;

[0039] The internal path optimization of the block chip specifically includes the following steps:

[0040] Step 1: Path scanning. The processing unit controls the stack control unit to start. The x-axis control module, y-axis control module and z-axis control module scan the inside of the block chip path by path. The acquisition unit records the amplifier circuit information and MOSFET information of each path scan and forwards it to the processing unit. The processing unit performs data analysis and saves the analysis results. The stack control unit controls the x-axis, y-axis and z-axis three-dimensional dimensions of the block chip to scan the internal circuit of the block chip, providing a data basis for simulation.

[0041] Step 2: Simulation: The temperature sensor transmits the collected ambient temperature information to the processing unit. The processing unit simulates the circuit information and MOSFET information according to the received ambient temperature information, calculates and analyzes the optimal path under different ambient temperatures and information bandwidths, and saves it.

[0042] Step 3: Error correction and noise reduction. The processing unit sends the optimal path to the stacking control unit according to the ambient temperature and information bandwidth. The stacking control unit executes the optimal path to the block chip. The acquisition unit obtains the noise information inside the block chip and transmits it to the processing unit. The processing unit analyzes the noise information and corrects the optimal path.

[0043] The path scanning specifically includes the following steps:

[0044] Step 101: The processing unit sends a path scanning instruction to the stack control unit, the stack control unit starts, the x-axis control module performs a switch test on the amplifier circuit and the MOSFET successively along the x-axis direction, the y-axis control module performs a switch test on the amplifier circuit and the MOSFET successively along the y-axis direction, and the z-axis control module performs a switch test on the amplifier circuit and the MOSFET successively along the z-axis direction;

[0045] Step 102: the acquisition module acquires the flicker noise value, frequency information and gate oxide value of the amplifier circuit and MOSFET in the MOSFET switch test, the acquisition module acquires the temperature information, resistance information and position information of the amplifier circuit in the amplifier circuit switch test, the acquisition module transmits the flicker noise value, frequency information, gate oxide value and MOSFET position information of the MOSFET to the processing unit, and the acquisition module transmits the temperature information, resistance information and amplifier circuit position information of the amplifier circuit to the processing unit;

[0046] Step 103: The processing unit divides the process index by the flicker noise value to obtain the parameter index. The process index is related to the MOSFET production process and is generally a constant 10. -25 , the processing unit calculates the product of the frequency information and the gate oxide layer value, and then divides the parameter index by the product to obtain the area index corresponding to the MOSFET. The area index refers to the product of the length and width of the MOSFET area and is one of the factors affecting the MOSFET flicker noise.

[0047] Step 104: The processing unit matches the MOSFET area index with the corresponding MOSFET position information and stores each MOSFET area index and MOSFET position information in the memory.

[0048] Step 105: The processing unit calculates the thermal noise information in the amplifier circuit based on the temperature information and resistance information of the amplifier circuit. The processing unit matches the thermal noise information with the corresponding amplifier circuit position information and stores each amplifier circuit's thermal noise information and amplifier circuit position information in the memory.

[0049] Among them, the simulation specifically includes the following steps:

[0050] Step 201: The temperature sensor transmits the ambient temperature information to the processing unit. The processing unit comprehensively calculates the optimal path of the current ambient temperature based on the ambient temperature information, the thermal noise information of the amplifier circuit, and the MOSFET area index.

[0051] Step 202: High and low temperature simulation. Based on the ambient temperature obtained by the acquisition unit, the high and low temperature range is ±45 degrees Celsius. The processing unit simulates the high ambient temperature. For each degree increase in the ambient temperature, the processing unit simulates the thermal noise information of each amplifier circuit in the block chip and modifies the optimal path obtained in Step 201 according to each MOSFET area index to minimize the sum of the internal thermal noise and flicker noise of the block chip. At the same time, the processing unit simulates the low ambient temperature. For each degree decrease in the ambient temperature, the processing unit simulates the thermal noise information of each amplifier circuit in the block chip and modifies the optimal path obtained in Step 201 according to each MOSFET area index to minimize the sum of the internal thermal noise and flicker noise of the block chip. The processing unit saves the simulated high and low ambient temperatures and the corresponding optimal paths in the memory.

[0052] Step 203: Heating and cooling simulation. Taking the ambient temperature acquired by the acquisition unit as the reference, the heating and cooling range is ±10 degrees Celsius. The processing unit simulates the heating ambient temperature. For each degree increase in the ambient temperature, it is marked as a new heating range. In the new heating range, the processing unit simulates the thermal noise information of each amplifier circuit in the block chip, and modifies the optimal path obtained in Step 201 according to the area index of each MOSFET to minimize the sum of the internal thermal noise and flicker noise of the block chip. At the same time, the processing unit simulates the cooling ambient temperature. For each degree decrease in the ambient temperature, it is marked as a new cooling range. In the new cooling range, the processing unit simulates the thermal noise information of each amplifier circuit in the block chip, and modifies the optimal path obtained in Step 201 according to the area index of each MOSFET to minimize the sum of the internal thermal noise and flicker noise of the block chip. The processing unit saves the simulated heating and cooling ambient temperatures and their corresponding optimal paths in the memory.

[0053] Among them, error correction and noise reduction specifically include the following steps:

[0054] Step 301: The temperature sensor acquires ambient temperature information and transmits it to the processing unit. The processing unit calculates the optimal path inside the current block chip according to the received ambient temperature information and sends it to the stacking control unit;

[0055] Step 302: The stacking control unit executes the optimal path. The acquisition unit starts to acquire information from the output end of the block chip in reverse order, sequentially acquires the temperature information, resistance information, and position information of each amplifier circuit, and simultaneously sequentially acquires the flicker noise value, frequency information, gate oxide layer value, and MOSFET position information of each MOSFET until the acquisition unit finishes acquiring all the amplifier circuits and MOSFETs inside the block chip. The acquisition unit uniformly transmits the acquired information back to the processing unit;

[0056] It should be noted that the gate oxide layer value is the capacitance of the gate oxide layer. By calculating the product of the vacuum permittivity, the relative permittivity of the gate oxide layer, and the area of the gate oxide layer, and dividing the product result by the thickness of the gate oxide layer, the specific gate oxide layer value can be obtained. The acquisition unit acquires parameter information such as the area and thickness of the gate oxide layer and transmits it to the processing unit, and the processing unit then calculates the gate oxide layer value according to the known vacuum permittivity and relative permittivity of the gate oxide layer;

[0057] An oscilloscope module is set inside the acquisition unit, which can acquire the frequency information related to MOSFETs. The position information corresponding to the amplifier circuits and MOSFETs can help the processing unit quickly find the amplifier circuit or MOSFET corresponding to the noise information, facilitating the execution of the program for correcting the path;

[0058] Step 303: The processing unit counts the number of amplifier circuits in the received optimal path, and determines the noise rating between each pair of amplifier circuits in the optimal path according to the number of amplifier circuits. The closer the path is to the output end, the more circuit noise is generated due to the gradual amplification of multiple amplifier circuits, and the greater the impact on the quality of the output signal. The processing unit performs a weighted calculation on the noise between each pair of amplifier circuits according to the rating determination. The specific values of the weighting coefficients involved in the weighted calculation are determined according to the impact of the actual circuit noise on the circuit signal quality. The circuit noise is the sum of thermal noise and flicker noise in the circuit;

[0059] Step 304: The processing unit re-determines the optimal path according to the noise values between each pair of amplifier circuits after the weighted calculation. At the same time, the processing unit transmits the information of the re-determined optimal path to the stack control unit, and the stack control unit modifies the internal path of the block chip. The processing unit saves the corrected optimal path together with the corresponding ambient temperature information to the memory, replacing the simulated optimal path saved in Step 2.

[0060] Among them, when the ambient temperature obtained by the temperature sensor changes, the temperature sensor transmits the obtained temperature information to the processing unit. The processing unit queries the temperature record in the memory. If the ambient temperature newly obtained by the temperature sensor has not been recorded in the memory, the processing unit sequentially executes Steps 301 to 304, calculates the circuit noise information under the new ambient temperature, and corrects the optimal path simulated in Step 2. The processing unit matches the corrected optimal path information with the newly obtained ambient temperature and transfers it to the memory for storage.

[0061] Among them, the x-axis control module controls the opening and closing of the circuit between the amplifier circuit and the MOSFET in the x-axis direction. The disconnection of the connection between the two MOSFETs in the x-axis direction is also controlled by the x-axis control module. The y-axis control module controls the opening and closing of the circuit between the amplifier circuit and the MOSFET in the y-axis direction. The disconnection of the connection between the two MOSFETs in the y-axis direction is also controlled by the y-axis control module. The z-axis control module controls the opening and closing of the circuit between the amplifier circuit and the MOSFET in the z-axis direction. The disconnection of the connection between the two MOSFETs in the z-axis direction is also controlled by the z-axis control module.

[0062] The above is only a preferred specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention, according to the technical solution and inventive concept of the present invention, makes equivalent substitutions or changes, and should be covered by the protection scope of the present invention.

Claims

1. A path-optimized MOSFET chip signal transmission system, comprising a processing unit and a block chip, wherein the block chip is composed of a plurality of amplifying circuits arranged and distributed along the three directions of the x-axis, the y-axis and the z-axis, and characterized in that: It also includes a stack control unit, the stack control unit includes an x-axis control module, a y-axis control module and a z-axis control module, the processing unit sends control instructions to the x-axis control module, the y-axis control module and the z-axis control module respectively, and the x-axis control module, the y-axis control module and the z-axis control module select the internal path of the block chip, and a plurality of MOSFETs are arranged and distributed between the amplification circuits; It includes a temperature sensor and a collection unit, wherein the temperature sensor obtains ambient temperature information and transmits it to the processing unit, and the collection unit obtains internal data information of the block chip and transmits the internal data information of the block chip to the processing unit; Also includes a memory, the processing unit converts the received internal path of the block chip into a path table and transfers it to the memory, analyzes the received power spectrum density and transfers the analysis data to the memory, and the memory also stores a computer program or instruction for the processing unit to execute; The internal path optimization of the block chip specifically includes the following steps: Step 1: Path scanning, the processing unit controls the stack control unit to start, and the x-axis control module, the y-axis control module and the z-axis control module scan the inside of the block chip path by path, and the acquisition unit records the amplifier circuit information and MOSFET information of each path scan and forwards it to the processing unit, and the processing unit performs data analysis and saves the analysis results; Step 2: Simulation, the temperature sensor transmits the collected ambient temperature information to the processing unit, the processing unit simulates the circuit information and MOSFET information according to the received ambient temperature information, calculates and analyzes the optimal path under different ambient temperatures and information bandwidths, and saves it; Step 3: Error correction and noise reduction. The processing unit sends the optimal path to the stacking control unit according to the ambient temperature and information bandwidth. The stacking control unit executes the optimal path to the block chip. The acquisition unit obtains the noise information inside the block chip and transmits it to the processing unit. The processing unit analyzes the noise information and corrects the optimal path.

2. A path-optimized MOSFET chip signal transmission system according to claim 1, characterized in that: The path scanning specifically includes the following steps: Step 101: the processing unit sends a path scanning instruction to the stack control unit, the stack control unit starts, the x-axis control module performs a switch test on the amplifier circuit and the MOSFET one by one along the x-axis direction, the y-axis control module performs a switch test on the amplifier circuit and the MOSFET one by one along the y-axis direction, and the z-axis control module performs a switch test on the amplifier circuit and the MOSFET one by one along the z-axis direction; Step 102: the acquisition module acquires the flicker noise value, frequency information and gate oxide value of the amplifier circuit and MOSFET in the MOSFET switch test, the acquisition module acquires the temperature information, resistance information and position information of the amplifier circuit in the amplifier circuit switch test, transmits the flicker noise value, frequency information, gate oxide value and MOSFET position information of the MOSFET to the processing unit, and transmits the temperature information, resistance information and position information of the amplifier circuit to the processing unit; Step 103: the processing unit divides the process index by the flicker noise value to obtain a parameter index, the processing unit calculates the product of the frequency information and the gate oxide layer value, and then divides the parameter index by the product to obtain an area index corresponding to the MOSFET; Step 104: Matching the MOSFET area index with the corresponding MOSFET position information, and transferring each MOSFET area index and MOSFET position information to a memory; Step 105: Calculate the thermal noise information in the amplifier circuit according to the temperature information and resistance information of the amplifier circuit, match the thermal noise information with the corresponding amplifier circuit position information, and transfer the thermal noise information and amplifier circuit position information of each amplifier circuit to a memory.

3. A path-optimized MOSFET chip signal transmission system according to claim 1, characterized in that: The simulation specifically comprises the following steps: Step 201: The temperature sensor transmits the ambient temperature information to the processing unit, and the processing unit calculates the optimal path of the current ambient temperature by integrating the ambient temperature information, the thermal noise information of the amplifier circuit and the MOSFET area index; Step 202: high and low temperature simulation, the processing unit simulates a high temperature environment temperature, and each time the environment temperature rises by one degree, the processing unit simulates the thermal noise information of each amplifier circuit in the block chip, and modifies the optimal path obtained in step 201 according to each MOSFET area index, so that the sum of the internal thermal noise and flicker noise of the block chip is minimized. At the same time, the processing unit simulates a low temperature environment temperature, and each time the environment temperature drops by one degree, the processing unit simulates the thermal noise information of each amplifier circuit in the block chip, and modifies the optimal path obtained in step 201 according to each MOSFET area index. The processing unit stores each simulated high and low environment temperature and the corresponding optimal path in a memory; Step 203: temperature rise and fall simulation, the processing unit simulates the temperature rise of the ambient temperature, each time the ambient temperature rises by one degree, it is marked as a new temperature rise range, in the new temperature rise range, the processing unit simulates the thermal noise information of each amplifier circuit in the block chip, and modifies the optimal path obtained in step 201 according to each MOSFET area index, so that the sum of the thermal noise and flicker noise inside the block chip is minimized, and at the same time, the processing unit simulates the temperature drop of the ambient temperature, each time the ambient temperature drops by one degree, it is marked as a new temperature drop range, in the new temperature drop range, the processing unit simulates the thermal noise information of each amplifier circuit in the block chip, and modifies the optimal path obtained in step 201 according to each MOSFET area index, so that the sum of the thermal noise and flicker noise inside the block chip is minimized, and the processing unit saves each simulated temperature rise and fall and the corresponding optimal path in the memory.

4. A path-optimized MOSFET chip signal transmission system according to claim 1, characterized in that: The error correction and noise reduction specifically comprises the following steps: Step 301: The temperature sensor collects ambient temperature information and transmits it to the processing unit. The processing unit calculates the optimal path inside the current block chip according to the received ambient temperature information and sends it to the stacking control unit. Step 302: the stack control unit executes the optimal path, the acquisition unit starts to acquire information from the output end of the block chip in reverse order, and sequentially acquires the temperature information, resistance information and position information of each amplifier circuit, and sequentially acquires the flicker noise value, frequency information, gate oxide layer value and MOSFET position information of each MOSFET, until the acquisition unit has acquired all the amplifier circuits and MOSFETs inside the block chip, and the acquisition unit uniformly transmits the acquired information back to the processing unit; Step 303: the processing unit counts the number of amplifier circuits in the received optimal path, and performs a rating determination on the noise between each amplifier circuit in the optimal path according to the number of amplifier circuits, and the processing unit performs a weighted calculation on the noise between each amplifier circuit according to the rating determination; Step 304: The processing unit redetermines the optimal path according to the noise value between each amplifier circuit after weighted calculation, and transmits the information of the redetermined optimal path to the stacking control unit. The stacking control unit modifies the internal path of the block chip. The processing unit saves the corrected optimal path together with the corresponding ambient temperature information into the memory, replacing the simulated optimal path saved in step 2.

5. A path-optimized MOSFET chip signal transmission system according to claim 4, characterized in that: When the ambient temperature obtained by the temperature sensor changes, the temperature sensor transmits the obtained temperature information to the processing unit, and the processing unit queries the temperature record from the memory. If the memory has not recorded the newly obtained ambient temperature of the temperature sensor, the processing unit executes steps 301 to 304 in sequence, calculates the circuit noise information under the new ambient temperature and corrects the optimal path simulated in step 2, and the processing unit matches the corrected optimal path information with the newly obtained ambient temperature and transfers it to the memory.

6. The path-optimized MOSFET chip signal transmission system according to claim 1, characterized in that: The x-axis control module controls the opening and closing of the circuit between the amplifying circuit and the MOSFET in the x-axis direction, and the connection and disconnection between the two MOSFETs in the x-axis direction are also controlled by the x-axis control module. The y-axis control module controls the opening and closing of the circuit between the amplifying circuit and the MOSFET in the y-axis direction, and the connection and disconnection between the two MOSFETs in the y-axis direction are also controlled by the y-axis control module. The z-axis control module controls the opening and closing of the circuit between the amplifying circuit and the MOSFET in the z-axis direction, and the connection and disconnection between the two MOSFETs in the z-axis direction are also controlled by the z-axis control module.

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