Microprocessor frequency modulation and voltage regulation device and method for industrial control

Abstract

The invention discloses a microprocessor frequency modulation and voltage regulation device and method for industrial control. The device is composed of a plurality of modules which are connected with one another. The parameter acquisition module acquires initial and current measurement parameter sets of the microprocessor; the performance degradation adaptation module calculates a performance loss factor according to the coefficients beta and gamma of the processor and the initial and current measurement parameter sets; the voltage frequency execution optimization module processes the initial voltage frequency table according to the configuration mode and the loss factor to generate a configuration table, adjusts the voltage and the dominant frequency and configures the voltage and the dominant frequency to the first voltage frequency adaptation module; and the voltage frequency configuration test module tests the adjusted voltage and main frequency and feeds back a result, and if the test result is qualified, the voltage frequency execution optimization module acts an adjustment value on the second voltage frequency adaptation module. According to the embodiment, through cooperation of all the modules, the working dominant frequency of the microprocessor is improved, real-time data operation is carried out by fully utilizing floating point instructions, and meanwhile long-term stable operation of the microprocessor can be ensured.

Description

Technical Field

[0001] The embodiments of the present application relate to, but are not limited to, the field of industrial control, and particularly relate to a microprocessor frequency and voltage regulation device and method for industrial control. Background Art

[0002] In the field of industrial control, adding a floating-point instruction set to the central processing unit and increasing the operating main frequency is an effective way to achieve complex real-time data operations, especially suitable for RISC-V instruction set processors, which can significantly improve data processing capabilities. However, there are many problems in practical applications. From the perspectives of reliability and chip yield, the fixed-frequency and fixed-voltage strategy needs to ensure that the worst-case chips in the process can work, making it difficult to increase the main frequency. Although the voltage regulation and fixed-frequency method can increase the main frequency to a certain extent, the industrial control environment is extreme. For example, a microprocessor with a 40nm process technology degrades by up to 15% in performance after aging at 125°C for 1000 hours, and a large amount of performance redundancy needs to be reserved, which limits the increase in the main frequency. In addition, the dynamic voltage and frequency scaling (DVFS) strategy based on the workload, although theoretically can balance performance and power consumption, requires complex scheduling software and is not applicable to real-time industrial control systems that cannot run complex operating systems.

[0003] Therefore, without relying on advanced processes, finding a reasonable processor frequency and voltage regulation method to increase the operating main frequency, use floating-point instructions for real-time data operations, and achieve long-term stable operation at the same time is an important problem that needs to be solved urgently in the current industrial control field. Summary of the Invention

[0004] The following is an overview of the subject matter described in detail in this article. This overview is not intended to limit the scope of protection of the claims.

[0005] The embodiments of the present application provide a microprocessor frequency and voltage regulation device and method for industrial control. Through the cooperation of each module, while increasing the operating main frequency of the microprocessor and making full use of floating-point instructions to carry out real-time data operations, it can ensure that the microprocessor achieves long-term stable operation.

[0006] In a first aspect, an embodiment of the present application provides a microprocessor frequency and voltage regulation device for industrial control, including: a first voltage-frequency adaptation module, a second voltage-frequency adaptation module, a parameter acquisition module, a voltage-frequency configuration inspection module, a voltage-frequency execution optimization module, and a performance degradation adaptation module that are interconnected; the parameter acquisition module is used to acquire an initial measurement parameter set and a current measurement parameter set of the microprocessor; the performance degradation adaptation module calculates a performance degradation factor based on the performance-voltage correlation coefficient β, the performance-temperature correlation coefficient γ, the initial measurement parameter set, and the current measurement parameter set of the microprocessor; the voltage-frequency execution optimization module is used to set the configuration mode of the microprocessor, perform a degradation process on the initial voltage-frequency table according to the performance degradation factor to generate a voltage-frequency configuration table, and adjust the voltage and the main frequency based on the voltage-frequency configuration table, and configure the adjusted voltage and the main frequency to the first voltage-frequency adaptation module, where the configuration mode is any one of a safety mode and a performance mode, the main frequencies corresponding to the safety mode and the performance mode are different, and the initial voltage-frequency table is generated according to the configuration mode and the initial measurement parameter set; the voltage-frequency configuration inspection module is used to perform a test based on the adjusted voltage and the main frequency and feedback the test result to the voltage-frequency execution optimization module; the voltage-frequency execution optimization module is used to, when the test result indicates that the test is qualified, apply the adjusted voltage and the main frequency to the second voltage-frequency adaptation module.

[0007] In combination with the first aspect, in an embodiment of the present application, the device further includes a register module, and the parameter acquisition module includes a voltage monitoring module, a temperature monitoring module, and a silicon device delay monitoring module; wherein, the voltage monitoring module is used to measure the voltage of the microprocessor; the temperature monitoring module is used to measure the temperature of the microprocessor; the silicon device delay monitoring module is used to measure the silicon device delay of the microprocessor; the register module is respectively connected to the voltage monitoring module, the temperature monitoring module, and the silicon device delay monitoring module, and is used to record the measured voltage, temperature, and silicon device delay of the microprocessor.

[0008] In combination with the first aspect, in an embodiment of the present application, the microprocessor is provided with a first test point and a second test point, the first test point is located in the voltage-frequency configuration inspection module, and the second test point is located in the microprocessor; the voltage monitoring module, the temperature monitoring module, and the silicon device delay monitoring module are respectively connected to the first test point and the second test point, and are used to obtain the voltage, temperature, and silicon device delay of the microprocessor in real time.

[0009] In combination with the first aspect, in an embodiment of the present application, the performance degradation adaptation module is provided with an abnormal alarm unit. When the performance degradation adaptation module detects that the performance degradation reaches a preset performance degradation rate threshold, the abnormal alarm unit outputs a warning signal and sends an interrupt signal to the microprocessor.

[0010] In combination with the first aspect, in an embodiment of the present application, the first voltage-frequency adaptation module includes a first power supply adjustment module and a first frequency adjustment module, the second voltage-frequency adaptation module includes a second power supply adjustment module and a second frequency adjustment module. The first power supply adjustment module and the first frequency adjustment module are both connected to the voltage-frequency execution optimization module and the voltage-frequency configuration verification module, and the second power supply adjustment module and the second frequency adjustment module are both connected to the voltage-frequency execution optimization module and the microprocessor.

[0011] In a second aspect, an embodiment of the present application provides a method for adjusting the frequency and voltage of a microprocessor for industrial control, which is applied to a device for adjusting the frequency and voltage of a microprocessor for industrial control as described above, and includes: obtaining an initial measurement parameter set and a current measurement parameter set of the microprocessor; setting a configuration mode of the microprocessor, and generating an initial voltage-frequency table according to the configuration mode and the initial measurement parameter set, where the configuration mode is any one of a safety mode and a performance mode, and the main frequencies corresponding to the safety mode and the performance mode are different; obtaining a performance voltage correlation coefficient β and a performance temperature correlation coefficient γ of the microprocessor; calculating a performance degradation factor according to the performance voltage correlation coefficient β, the performance temperature correlation coefficient γ, the initial measurement parameter set, and the current measurement parameter set; performing a degradation process on the initial voltage-frequency table according to the performance degradation factor to generate a voltage-frequency configuration table; adjusting the main frequency and voltage of the microprocessor based on the voltage-frequency configuration table, and performing a data inspection test on the adjusted main frequency and voltage through a verification circuit to obtain a test result; and applying the adjusted main frequency and voltage when the test result indicates that the test is qualified.

[0012] Combined with the second aspect, in an embodiment of the present application, the initial measurement parameter set includes the initial voltage, initial temperature, and initial silicon device delay of the microprocessor; generating the initial voltage-frequency table according to the configuration mode and the initial measurement parameter set includes: reading the main frequency corresponding to the configuration mode; determining the relationship curve between the voltage and frequency of the microprocessor, and adjusting the relationship curve according to the initial silicon device delay to obtain an optimized voltage and an optimized relationship curve; establishing a temperature compensation model according to the initial temperature and the optimized relationship curve; substituting the read main frequency into the temperature compensation model to calculate the voltage value required by the microprocessor at the main frequency; adding the main frequency and the voltage value corresponding to the main frequency to a pre-constructed data structure to form an initial voltage-frequency table.

[0013] Combined with the second aspect, in an embodiment of the present application, the current measurement parameter set includes the current voltage, current temperature, and current silicon device delay of the microprocessor; calculating the performance degradation factor according to the performance-voltage correlation coefficient β, the performance-temperature correlation coefficient γ, the initial measurement parameter set, and the current measurement parameter set includes: calculating the voltage performance according to the performance-voltage correlation coefficient β, the initial voltage, and the current voltage; calculating the temperature performance according to the performance-temperature correlation coefficient γ, the initial temperature, and the current temperature; calculating the performance degradation factor according to the voltage performance, the temperature performance, the current silicon device delay, and the initial silicon device delay.

[0014] Combined with the second aspect, in an embodiment of the present application, testing the adjusted main frequency and voltage to obtain a test result includes: monitoring key performance indicators of the silicon device inside the microprocessor, and confirming the working state of the silicon device based on the voltage-frequency configuration table according to the key performance indicators to obtain a test result.

[0015] Combined with the second aspect, in an embodiment of the present application, the method further includes: in the case where the test result indicates that the test is unqualified, performing an upgrade process and self-check on the voltage level of the voltage-frequency configuration table. When the self-check result indicates that it fails, sending an interrupt request to the microprocessor.

[0016] Compared with the prior art, the beneficial effects of the embodiments of the present application are as follows: Through the collaboration of each module, the performance degradation factor is accurately calculated based on the parameters of the microprocessor, and the voltage-frequency scheduling strategy is adapted in real time. Users can flexibly call the configuration mode according to different scenarios. In low-computing-power scenarios, the working voltage of the microprocessor is reduced, effectively slowing down the stress degradation of the chip; in high-computing-power scenarios, the working voltage and main frequency are reasonably increased, enabling the central processing unit with a floating-point extension instruction set to complete the complex arithmetic tasks of a traditional digital signal processor (DSP). This method breaks through the limitation of the traditional strategy for increasing the main frequency and can well adapt even when the chip performance degrades in extreme industrial control environments. At the same time, without the need for complex scheduling software, the frequency and voltage adjustment can be completed only by the cooperation of the hardware modules. Before frequency and voltage adjustment, both modes will perform online inspection to ensure the rationality and safety of the adjustment, greatly improving the system stability. In addition, this enables the microprocessor to utilize floating-point instructions to perform complex real-time data operations without relying on advanced processes, improving the data processing ability. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 is the circuit structure diagram of the microprocessor frequency and voltage adjustment device for industrial control provided by the embodiments of the present application; Figure 2 is the flowchart of the microprocessor frequency and voltage adjustment method for industrial control provided by an embodiment of the present application; Figure 3 is provided by an embodiment of the present application Figure 2 the specific flowchart of step 220; Figure 4 is provided by an embodiment of the present application Figure 2 the specific flowchart of step 240; Figure 5 is the specific circuit design diagram provided by a specific example of the present application; Figure 6 is the specific circuit design diagram provided by another specific example of the present application; Figure 7 is the overall flowchart of the voltage and frequency adjustment method provided by an embodiment of the present application; Reference numerals: voltage-frequency configuration inspection module 1; voltage-frequency execution optimization module 2; performance degradation adaptation module 3; register module 4; voltage monitoring module 5; temperature monitoring module 6; silicon device delay monitoring module 7; first test point 8; second test point 9; first power adjustment module 10; first frequency adjustment module 11; second power adjustment module 12; second frequency adjustment module 13. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0018] In order to make the objectives, technical solutions and advantages of the present application more clear and understandable, the present application will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0019] It should be noted that although the logical order is shown in the flowchart, in some cases, the steps shown or described may be executed in a different order from that in the flowchart. Terms such as "first", "second", etc. in the specification, claims and the above-mentioned drawings are used to distinguish similar objects and do not necessarily need to describe a specific order or sequence. It should be noted that the structures, ratios, sizes, etc. shown in the drawings of this specification are only used to cooperate with the content disclosed in the specification for those skilled in this technology to understand and read, and are not used to limit the limiting conditions under which the present application can be implemented. Therefore, they do not have a technical essence. Any modification of the structure, change of the proportional relationship or adjustment of the size, without affecting the effects that the present application can produce and the objectives that can be achieved, should still fall within the scope covered by the technical content disclosed in the present application. At the same time, terms such as "upper", "lower", "left", "right", "middle" and "one" cited in this specification are only for the convenience of clear description and are not used to limit the scope under which the present application can be implemented. The change or adjustment of their relative relationships, without substantial change in the technical content, should also be regarded as the scope under which the present application can be implemented.

[0020] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field to which this application belongs. The terms used herein are only for the purpose of describing the embodiments of this application and are not intended to limit this application.

[0021] Common existing industrial control microprocessors commonly adopt a strategy of fixed frequency and fixed voltage, and the working frequency is relatively low. The central processing unit is only responsible for task scheduling and control, and real-time data operation tasks are assigned to a dedicated DSP processor for acceleration. The software system is commonly a tiny real-time operating system or a bare code system, without a software mechanism for complex performance scheduling strategies for the central processing unit. By adding a dedicated DSP processor, the additional circuit area of the chip will be increased, resulting in an increase in cost.

[0022] Adding a floating-point operation instruction set to the central processing unit and simultaneously increasing the working main frequency of the processor is a method to achieve complex real-time data operations, which is particularly convenient for processors with the RISC-V instruction set. Considering both reliability requirements and chip yield, the fixed-frequency and fixed-voltage strategy needs to ensure that even the worst-chip in the process window can work reliably, and it is difficult to increase the working main frequency of the processor. The voltage-regulating and frequency-fixing method that compensates for process deviations can increase the main frequency of the processor in mass-produced chips to a certain extent. However, this solution still needs to consider the performance degradation of silicon devices and reserve performance redundancy. The industrial control environment has extreme temperatures, long continuous working hours, and long working life requirements. The performance degradation caused by processor aging cannot be ignored. A certain 40nm process microprocessor aged at 125°C for 1000 hours, and the measured maximum performance degradation can reach 15%. Using a complex dynamic voltage and frequency scaling (DVFS) strategy based on workload complexity requires a complex scheduling software strategy to complete, which is not applicable to real-time industrial control systems that cannot run complex operating systems themselves.

[0023] How to appropriately increase the working main frequency of the processor through reasonable methods without using advanced processes, use the floating-point instructions of the processor for real-time data operations, achieve effective control algorithms, and work stably for a long time is an urgent problem to be solved.

[0024] In view of this, the embodiments of the present application provide a frequency and voltage regulation device for a microprocessor used in industrial control and a frequency and voltage regulation method for the microprocessor. The device includes a parameter acquisition module, a voltage and frequency configuration inspection module, a voltage and frequency execution optimization module, a performance degradation adaptation module, a first voltage and frequency adaptation module, and a second voltage and frequency adaptation module that are interconnected. Among them, the parameter acquisition module is mainly responsible for acquiring the initial measurement parameter set and the current measurement parameter set of the microprocessor. The performance degradation adaptation module can calculate a performance degradation factor based on the performance-voltage correlation coefficient β, the performance-temperature correlation coefficient γ of the microprocessor, as well as the initial measurement parameter set and the current measurement parameter set. The voltage and frequency execution optimization module can be used to set the configuration mode of the microprocessor, perform a degradation process on the initial voltage and frequency table according to the performance degradation factor to generate a voltage and frequency configuration table, and adjust the voltage and the main frequency based on this configuration table, and configure the adjusted voltage and main frequency to the first voltage and frequency adaptation module. Among them, the configuration mode can be any one of the safe mode and the performance mode, and the main frequencies corresponding to various modes are different; the initial voltage and frequency table is generated by the device circuit according to the main frequency parameters corresponding to the configuration mode and the factory information recorded by the parameter acquisition module. When the test result feedback by the voltage and frequency configuration inspection module indicates that the test is qualified, the voltage and frequency execution optimization module can apply the adjusted voltage and main frequency to the second voltage and frequency adaptation module. The voltage and frequency configuration inspection module can perform a test according to the adjusted voltage and main frequency and feedback the test result to the voltage and frequency execution optimization module. When the test result indicates that the test is qualified, the voltage and frequency execution optimization module can apply the adjusted voltage and main frequency to the second voltage and frequency adaptation module. Through the cooperation of each module in this embodiment, calculating the performance degradation factor based on the microprocessor parameters and adjusting the voltage and the main frequency can break through the limitation of the traditional strategy for the main frequency improvement, adapt to the chip performance degradation in extreme industrial control environments, and without the need for complex scheduling software, ensure the system stability with an online inspection mechanism, enable the microprocessor to use floating-point instructions to achieve complex real-time data operations and improve the data processing ability without relying on advanced processes.

[0025] The following further elaborates on the embodiments of the present application in conjunction with the accompanying drawings.

[0026] Refer to Figure 1 , Figure 1 which is the circuit structure diagram of the frequency and voltage regulation device for a microprocessor used in industrial control provided by the embodiments of the present application. This device mainly consists of a voltage and frequency configuration inspection module 1, a voltage and frequency execution optimization module 2, a performance degradation adaptation module 3, a parameter acquisition module, a first voltage and frequency adaptation module, and a second voltage and frequency adaptation module that are interconnected. The following details the specific functions of each module: The parameter acquisition module is mainly responsible for acquiring the initial measurement parameter set and the current measurement parameter set of the microprocessor (CPU). The initial measurement parameter set and the current measurement parameter set contain key data of the microprocessor at different stages, including voltage, temperature, and silicon device delay, etc.

[0027] The performance degradation adaptation module 3 can calculate the performance degradation factor based on the performance-voltage correlation coefficient β, the performance-temperature correlation coefficient γ of the microprocessor, as well as the initial measurement parameter set and the current measurement parameter set. Among them, the performance-voltage correlation coefficient β represents the degree of association between the performance change of the microprocessor and the voltage change, and the performance-temperature correlation coefficient γ can be used to measure the degree to which the performance of the microprocessor is affected by temperature. It can be understood that the user can complete the parameter configuration of the performance-voltage correlation coefficient β and the performance-temperature correlation coefficient γ through the performance degradation adaptation module 3. This module supports the user to input or adjust the β and γ coefficients according to the actual application scenario and the device operation requirements.

[0028] The voltage-frequency execution optimization module 2 mainly performs the following operations: First, the module can set the configuration mode of the microprocessor to the safe mode or the performance mode, and the two modes correspond to different main frequency parameters. Then, according to the performance degradation factor calculated by the performance degradation adaptation module 3, the initial voltage-frequency table is degraded to generate a voltage-frequency configuration table adapted to the current performance state. Next, based on the generated voltage-frequency configuration table, the voltage and the main frequency parameters are adjusted, and the adjusted voltage and main frequency parameters are configured to the first voltage-frequency adaptation module so that it performs preliminary adaptation work according to these parameters. Among them, the initial voltage-frequency table is generated by the device circuit according to the main frequency parameters corresponding to the configuration mode and the factory information recorded by the parameter acquisition module. The factory information includes the initial characteristic data such as the voltage, temperature, and silicon device delay of the microprocessor at the time of factory.

[0029] The voltage-frequency configuration inspection module 1 can test according to the voltage and the main frequency adjusted by the voltage-frequency execution optimization module 2, and then promptly feedback the test result to the voltage-frequency execution optimization module 2, so that the voltage-frequency execution optimization module 2 can decide whether to apply the adjusted parameters to the second voltage-frequency adaptation module according to the test result. For example, when the voltage-frequency execution optimization module 2 receives the test result feedback by the voltage-frequency configuration inspection module 1 and the test is characterized as qualified, it can apply the adjusted voltage and main frequency to the second voltage-frequency adaptation module to officially apply the adjusted voltage and main frequency to ensure the microprocessor operates in a stable state.

[0030] In a feasible embodiment, such as Figure 1As shown, the device further includes a storage module 4, and the parameter acquisition module is composed of a voltage monitoring module 5, a temperature monitoring module 6, and a silicon device delay monitoring module 7. Among them, the voltage monitoring module 5 is mainly responsible for measuring the voltage value of the microprocessor, the temperature monitoring module 6 is responsible for measuring the temperature of the microprocessor in real time, and the silicon device delay monitoring module 7 is responsible for measuring the silicon device delay of the microprocessor. The storage module 4 is respectively connected to the voltage monitoring module 5, the temperature monitoring module 6, and the silicon device delay monitoring module 7, and its function is to record and store the voltage, temperature, and silicon device delay data of the microprocessor measured by the above three modules. In the actual operation process, when the microprocessor chip is subjected to factory testing, under specific environmental conditions of constant temperature, the voltage monitoring module 5, the temperature monitoring module 6, and the silicon device delay monitoring module 7 can respectively measure the voltage, temperature, and silicon device delay of the microprocessor at the time of factory, and permanently store these measurement data in the storage module 4 for subsequent comparison analysis and reference of the performance changes of the microprocessor at different working stages.

[0031] In a feasible embodiment, as Figure 1 shown, the CPU associated with the device is provided with a first test point 8 and a second test point 9. Among them, the first test point 8 is located in the voltage frequency configuration inspection module 1, and the second test point 9 is located in the microprocessor (CPU). Both the first test point 8 and the second test point 9 are respectively connected to the voltage monitoring module 5, the temperature monitoring module 6, and the silicon device delay monitoring module 7. The voltage monitoring module 5, the temperature monitoring module 6, and the silicon device delay monitoring module 7 can obtain parameters such as the voltage, temperature, and silicon device delay of the microprocessor in real time by means of the first test point 8 and the second test point 9. It should be noted that the positions of the first test point 8 and the second test point 9 on the microprocessor are adjacent to each other. The adjacent positions are set to ensure that the voltage, temperature, and silicon device delay data of the microprocessor obtained by the voltage monitoring module 5, the temperature monitoring module 6, and the silicon device delay monitoring module 7 from these two test points are as consistent as possible. In this way, the accuracy and reliability of the collected data can be effectively improved.

[0032] In a feasible embodiment, the configuration modes of the microprocessor include a safe mode and a performance mode. In scenarios where high-performance computing power is not required, the microprocessor can operate in the safe mode, which can reduce the junction temperature and operating voltage of the processor, thereby slowing down the chip stress degradation. In real-time operation control scenarios, the operating voltage and main frequency can be reasonably increased, enabling the central processor with a floating-point extended instruction set to complete some complex data operation tasks that were traditionally run by DSP processors. In actual operation, the user can configure the safe mode or the performance mode through the performance degradation adaptation module 3, and at the same time configure the corresponding frequency, voltage upper and lower limits, and temperature upper and lower limits of the mode.

[0033] In a feasible embodiment, the performance degradation adaptation module 3 can periodically and automatically obtain data information of the first test point 8 and the second test point 9 inside the CPU from the voltage monitoring module 5, the temperature monitoring module 6, and the silicon device delay monitoring module 7 in real time. Further, the performance degradation adaptation module 3 can calculate a performance degradation factor in real time according to the pre-configured performance-voltage correlation coefficient β, performance-temperature correlation coefficient γ, and data information (including voltage, temperature, and silicon device delay), and transmit this factor to the voltage-frequency execution optimization module 2, so that the voltage-frequency execution optimization module 2 performs a degradation process on the initial voltage-frequency table according to this degradation factor, and then generates a real-time voltage-frequency configuration table.

[0034] In a feasible embodiment, the initial measurement parameter set includes the voltage, temperature, and silicon device delay measured at the factory, the current measurement parameter set includes the voltage, temperature, and silicon device delay measured currently, and the calculation formula for the performance degradation adaptation module 3 to calculate the performance degradation factor h is h = -( - )β - ( - )γ - , where represents the measured voltage at the factory, represents the measured temperature at the factory, represents the measured silicon device delay at the factory, represents the currently measured voltage, represents the currently measured temperature, represents the currently measured silicon device delay. The performance-voltage correlation coefficient β and the performance-temperature correlation coefficient γ are input by the user through parameter configuration. Specifically, the user configures the parameters in a configuration file, and this configuration file is compiled and integrated into the running initialization code. After the processor is started, the running initialization code configures and into the performance degradation adaptation module 3.

[0035] In a feasible embodiment, as Figure 1 shown, the first voltage-frequency adaptation module is composed of the first power supply regulation module 10 and the first frequency regulation module 11, and the second voltage-frequency adaptation module is composed of the second power supply regulation module 12 and the second frequency regulation module 13. The specific connection relationship is as follows: The first power supply regulation module 10 is respectively connected to the voltage-frequency execution optimization module 2 and the voltage-frequency configuration inspection module 1, and the first frequency regulation module 11 is also connected to the voltage-frequency execution optimization module 2 and the voltage-frequency configuration inspection module 1; both the second power supply regulation module 12 and the second frequency regulation module 13 are respectively connected to the voltage-frequency execution optimization module 2 and the CPU.

[0036] In a feasible embodiment, after the user selects the configuration mode, the microprocessor can execute the real-time voltage-frequency configuration table generated by the optimization module 2 according to the voltage frequency, and configure the corresponding frequency and voltage to the first power adjustment module 10 and the first frequency adjustment module 11. Then, the voltage-frequency configuration inspection module 1 executes a self-test inspection process. If the self-test process passes smoothly, the voltage-frequency configuration inspection module 1 can notify the voltage-frequency execution optimization module 2 to apply the configuration in the voltage-frequency configuration table to the second power adjustment module 12 and the second frequency adjustment module 13, so that the microprocessor can operate according to the new voltage-frequency configuration. If an abnormal situation occurs during the self-test verification process, the voltage-frequency configuration inspection module 1 will send an interrupt signal to the CPU and wait for the user to intervene and perform corresponding processing to ensure the stable operation and reliability of the entire system.

[0037] In a feasible embodiment, the first power adjustment module 10 and the second power adjustment module 12 are independent adjustable power modules, and usually a small-size light-load linear power module can be used to meet the requirements of the device for space and performance.

[0038] In a feasible embodiment, the voltage-frequency configuration inspection module 1 is an on-line voltage-frequency (Voltage-Frequency, VF) inspection module built into the CPU. It has a small circuit area and can perform real-time VF inspection during the normal operation of the CPU. It should be noted that in the device selection of this module, the selected device type is the same as the main device type of the CPU. Due to the same device type, the voltage-frequency configuration inspection module 1 and the CPU are highly matched in terms of electrical characteristics, thermal characteristics, and process compatibility. When the CPU performs frequency modulation and voltage regulation actions, the module can accurately sense the voltage and frequency changes of the CPU according to the same device characteristics, so as to effectively monitor the execution of frequency modulation and voltage regulation actions. In addition, the voltage-frequency configuration inspection module 1 can realize on-line inspection of voltage regulation and frequency modulation. The user can configure the VF Gap between the on-line VF inspection module (that is, the voltage-frequency configuration inspection module 1) and the CPU according to actual needs. Here, the VF Gap refers to the difference in voltage and frequency settings between the voltage-frequency configuration inspection module 1 and the CPU. Usually, the voltage of the on-line inspection VF inspection module is set lower than that of the CPU. The lower voltage can provide a relatively conservative test environment for the CPU, so that when the voltage-frequency configuration inspection module 1 performs inspection, possible problems can be detected in advance, avoiding unstable situations directly occurring on the CPU. By setting the voltage of the voltage-frequency configuration inspection module 1 lower in this way, the stability of the CPU voltage regulation to adapt to the target main frequency can be further improved. For example, under the 40nm process condition, it is more appropriate to set the voltage of the voltage-frequency configuration inspection module 1 25mV lower than that of the CPU as the Gap setting.

[0039] In a feasible embodiment, the performance degradation adaptation module 3 integrates temperature, voltage, and wear rate abnormal alarm units. When the module monitors that the fluctuations of temperature and voltage parameters exceed the normal range, or the performance wear rate reaches the preset threshold, the corresponding abnormal alarm unit will be triggered. During actual operation, the user can preset the performance wear rate threshold according to the operation requirements of the device. When the module detects that the performance wear reaches the lower limit of the threshold and triggers the abnormal alarm unit, the unit will immediately output a warning signal, indicating that there is an abnormal working condition in the system. At the same time, the abnormal alarm unit can also send an interrupt signal to the microprocessor to pause the current running task and wait for the user to intervene and handle, thereby effectively avoiding the failure risk caused by the performance degradation of the device and ensuring the safe and stable operation of the system.

[0040] It should be noted that Figure 1 In, except for the second power supply adjustment module 12, the rest of the modules can be designed within the microprocessor chip. The second power supply adjustment module 12 has two design methods, which can be designed within the microprocessor chip or as an external circuit.

[0041] It should be pointed out that this device is a hardware adaptive device and does not need to rely on a frequency modulation and voltage regulation software mechanism (such as DVFS) to implement the frequency modulation and voltage regulation function of the CPU. Compared with the voltage and frequency switching time of milliseconds (mS) level of DVFS, this device can achieve the voltage adjustment switching time of microseconds (uS) level.

[0042] See Figure 2 , Figure 2 is a flowchart of a method for frequency modulation and voltage regulation of a microprocessor for industrial control provided by an embodiment of the present application. This method can be applied to the above-mentioned microprocessor frequency modulation and voltage regulation device for industrial control, and its process can include but is not limited to steps 210 to 270.

[0043] Step 210: Obtain the initial measurement parameter set and the current measurement parameter set of the microprocessor; Step 220: Set the configuration mode of the microprocessor, and generate an initial voltage-frequency table according to the configuration mode and the initial measurement parameter set; Step 230: Obtain the performance voltage correlation coefficient β and the performance temperature correlation coefficient γ of the microprocessor; Step 240: Calculate the performance degradation factor according to the performance voltage correlation coefficient β, the performance temperature correlation coefficient γ, the initial measurement parameter set, and the current measurement parameter set; Step 250: Perform degradation processing on the initial voltage-frequency table according to the performance degradation factor to generate a voltage-frequency configuration table; Step 260: Adjust the main frequency and voltage of the microprocessor based on the voltage-frequency configuration table, and conduct data verification tests on the adjusted main frequency and voltage through a verification circuit to obtain test results; Step 270: Apply the adjusted main frequency and voltage when the test results indicate qualified tests.

[0044] In a feasible embodiment, in step 210, the initial measurement parameter set includes key parameters of the microprocessor in the initial state (such as when leaving the factory), such as the initial voltage, initial temperature, and initial silicon device delay. The initial voltage reflects the power supply situation when the microprocessor starts; the initial temperature is the ambient temperature or its own temperature when the microprocessor starts running; the initial silicon device delay reflects the signal transmission delay situation of the internal silicon devices of the microprocessor in the initial state. The current measurement parameter set is the real-time operating state parameters of the microprocessor obtained, including the current voltage, current temperature, and current silicon device delay. The current voltage and temperature reflect the actual power supply and environmental conditions during the operation of the microprocessor; the current silicon device delay reflects the performance change of the silicon devices during the operation.

[0045] In a feasible embodiment, in step 220, the configuration modes of the microprocessor include multiple modes such as the safe mode and the performance mode, and each mode corresponds to different main frequency parameters. The user can set the microprocessor to a specific configuration mode according to actual needs and configure the corresponding main frequency at the same time. It can be understood that different main frequency parameters determine the operating speed and power consumption level of the microprocessor. A higher main frequency can improve the operating efficiency but increase the power consumption, while a lower main frequency helps to reduce the energy consumption and is suitable for usage scenarios sensitive to power consumption.

[0046] In a feasible embodiment, based on the main frequency corresponding to the configuration mode and the initial measurement parameter set, the voltage values corresponding to the microprocessor at different main frequencies can be determined to form an initial voltage-frequency table. This table provides the basic voltage and frequency correspondence relationship for the operation of the microprocessor and is the basis for subsequent adjustments. For example, in the safe mode, lower voltage and frequency may be selected to ensure the stability of the system; while in the performance mode, higher voltage and frequency will be selected to improve the performance of the system.

[0047] In a feasible embodiment, the initial measurement parameter set includes the initial voltage, initial temperature, and initial silicon device delay of the microprocessor, that is, the voltage, temperature, and silicon device delay when the processor leaves the factory. As Figure 3 shown, the process of step 220 may include but is not limited to steps 310 to 350.

[0048] Step 310: Read the main frequency corresponding to the configuration mode; Step 320: Determine the relationship curve between the voltage and frequency of the microprocessor, and adjust the relationship curve according to the initial silicon device delay to obtain the optimized voltage and the optimized relationship curve; Step 330: Establish a temperature compensation model based on the initial temperature and the optimized relationship curve; Step 340: Substitute the read main frequency into the temperature compensation model to calculate the voltage value required by the microprocessor at the main frequency; Step 350: Add the main frequency and the voltage value corresponding to the main frequency to the pre-constructed data structure to form an initial voltage-frequency table.

[0049] In a feasible embodiment, in Step 320, the relationship curve between the voltage and frequency reflects the frequency characteristics of the microprocessor at different voltages. Since the silicon device delay will affect the performance of the microprocessor, adjusting the relationship curve according to the initial silicon device delay can make the adjusted curve more in line with the actual situation.

[0050] It can be understood that temperature changes will affect the performance of the microprocessor. The temperature compensation model can adjust the voltage and frequency according to the temperature change to ensure that the microprocessor can operate stably at different temperatures.

[0051] In a feasible embodiment, in Step 340, substituting the read main frequency into the temperature compensation model to calculate the voltage value required by the microprocessor at the main frequency can ensure that the microprocessor can obtain an appropriate voltage supply under different main frequencies and temperature conditions.

[0052] In a feasible embodiment, in Step 230, the performance-voltage correlation coefficient β reflects the relationship between the performance of the microprocessor and the voltage. The performance-temperature correlation coefficient γ can reflect the relationship between the performance of the microprocessor and the temperature.

[0053] In a feasible embodiment, the performance-voltage correlation coefficient β and the performance-temperature correlation coefficient γ of the microprocessor can be determined in the following ways: (1) User-defined setting: Allow the user to customize the β and γ coefficients according to the actual application requirements to meet the performance optimization requirements in specific scenarios.

[0054] (2)Obtained in the post-silicon verification phase: In microprocessors of the same model, the β and γ coefficients are fixed values and can be obtained from the experimental data in the post-silicon verification phase. The specific operation steps are as follows: In the initial state where the chip is not aged, use temperature control equipment to stably set the junction temperature of the microprocessor chip to a fixed value. By gradually adjusting the CPU voltage, measure and record the data points of the silicon device performance (such as delay, switching speed, etc.) changing with the voltage, fit to obtain the performance-voltage change curve, and then calculate the β coefficient. Similarly, under the condition that the chip is not aged, set the chip voltage to a fixed value, and gradually adjust the CPU junction temperature through the temperature control equipment, measure and record the data points of the silicon device performance changing with the temperature, fit to obtain the performance-temperature change curve, and thus calculate the γ coefficient.

[0055] It should be noted that the above two methods are only for illustrative purposes, and the embodiments of the present application do not limit the methods for obtaining the performance-voltage correlation coefficient β and the performance-temperature correlation coefficient γ.

[0056] In a feasible embodiment, considering the influence of factors such as voltage and temperature on the performance of the microprocessor, using the performance-voltage correlation coefficient β and the performance-temperature correlation coefficient γ, combined with the initial and current measurement parameter sets, the performance degradation factor can be calculated. This factor reflects the degree of performance loss of the microprocessor due to changes in factors such as voltage and temperature.

[0057] In a feasible embodiment, the current measurement parameter set includes the current voltage, current temperature, and current silicon device delay of the microprocessor. As Figure 4 shown, the execution process of step 240 may include but is not limited to steps 410 to 430.

[0058] Step 410: Calculate the voltage performance according to the performance-voltage correlation coefficient β, the initial voltage, and the current voltage; Step 420: Calculate the temperature performance according to the performance-temperature correlation coefficient γ, the initial temperature, and the current temperature; Step 430: Calculate the performance degradation factor according to the voltage performance, the temperature performance, the current silicon device delay, and the initial silicon device delay.

[0059] In a feasible embodiment, the calculation formula for obtaining the performance degradation factor is h = -( - )β - ( - )γ - , where represents the measured initial voltage, represents the measured initial temperature, represents the measured initial silicon device delay, represents the current voltage, Represents the current temperature, Represents the current silicon device delay, ( - ) β represents the voltage performance, ( - ) γ represents the temperature performance.

[0060] In a feasible embodiment, in step 250, when adjusting the voltage value in the initial voltage-frequency table according to the calculated performance degradation factor, generally, the larger the performance degradation factor, the more serious the performance loss of the microprocessor. Correspondingly, the voltage value needs to be adjusted to ensure the stable operation of the microprocessor. After the degradation process, a voltage-frequency configuration table is obtained. This table is the basis for the voltage and frequency configuration during the actual operation of the microprocessor, and can better adapt to the actual working state of the microprocessor, improving the performance and stability of the system.

[0061] In a feasible embodiment, the execution process of step 260 is as follows: First, according to the requirements of the voltage-frequency configuration table, the main frequency and voltage of the microprocessor are adjusted. During the adjustment process, key performance indicators of the silicon devices inside the microprocessor are monitored in real time, such as transistor switching speed, delay, etc. After the adjustment is completed, the adjusted main frequency and voltage data are transmitted to the verification circuit, and the verification circuit performs data verification tests. By comparing standard parameter ranges, simulating operating scenarios, etc., the adjusted parameters are comprehensively verified. At the same time, combined with the key performance indicators of the silicon devices monitored in real time, the actual working state of the silicon devices based on the voltage-frequency configuration table is comprehensively evaluated, and then the test result is obtained.

[0062] In a feasible embodiment, if the test result indicates that the test is qualified, that is, the working state of the silicon device shows that its performance meets the preset requirements, then according to the voltage-frequency configuration table, the adjusted main frequency and voltage are applied to the microprocessor to complete the adjustment of the main frequency and voltage of the microprocessor.

[0063] In a feasible embodiment, if the test result indicates that the test is unqualified, that is, the working state of the silicon device shows that its performance does not meet the preset requirements, then the voltage level of the voltage-frequency configuration table is upgraded and self-check is performed. If the self-check result indicates non-passing, an interrupt request will be sent to the microprocessor and wait for further processing.

[0064] The processes of step 260 and step 270 will be described in detail below with a specific example.

[0065] In this example, the implementation in the specific circuit design is as Figure 5 and Figure 6As shown. Since the frequency and voltage adjustment of the processor cannot be ideally linearly processed, the device proposed in this embodiment designs the actual performance degradation operation as a discretized processing at a finite level, and this processing process can be completed in the performance degradation adaptation module 3 of the device. According to the post-silicon verification data, three degradation levels are set, namely h0, h1, and h2. Among them, h0 represents the healthy state at the time of factory shipment, h1 represents the mid-term degradation state, and h2 represents the end-term degradation state. Through the formula h= -( - )β-( - )γ- The calculated performance degradation factor h will be compared with the h1 threshold and the h2 threshold: If h is less than the h1 threshold, it will be processed according to the h0 degradation level; if h is greater than or equal to the h1 threshold and less than the h2 threshold, it will be processed according to the h1 degradation level; if h is greater than or equal to the h2 threshold, it will be processed according to the h2 degradation level. In the case where the configuration mode is the safe mode, the main frequency of the processor is relatively low, which can be set as Fs, and the set voltage range is from V1 to V6. When in the h0 state, the voltage range is between V1 - V3, and the specific value is determined according to the silicon device delay information in different chip individuals. The performance of the silicon device is divided into three levels, which are respectively adapted to the voltages of V1 - V3. If the current voltage fails the inspection in the voltage-frequency configuration inspection module 1 of the device (that is, the test result indicates that the test is qualified), a one-step upshift processing can be performed; if the inspection fails again, the circuit will issue an abnormal interruption and no voltage-frequency adjustment will be performed anymore. When in the h1 state, the voltage range is V2 - V4, which is also determined according to the silicon device delay level information in different chip individuals. If the current voltage inspection fails, a one-step upshift processing can be performed; if the inspection fails again, the circuit issues an abnormal interruption and no voltage-frequency adjustment is performed. When in the h2 state, the voltage range is V3 - V5, which is also determined by the silicon device delay level information in different chip individuals. If the current voltage inspection fails, a one-step upshift processing can be performed; if the inspection fails again, the circuit issues an abnormal interruption and stops the voltage-frequency adjustment. In the case where the configuration mode is the performance mode, the main frequency of the processor is relatively high, which can be set as Fp, and the set voltage range is between V7 - V12. The performance degradation operation from the initial voltage-frequency table to the voltage-frequency configuration table is similar to that in the safe mode, and the specific situation is as Figure 6 shown, and will not be elaborated here.

[0066] See Figure 7 , Figure 7 which is the overall flowchart of the voltage regulation and frequency modulation method provided by an embodiment of the present application.

[0067] First, obtain the upper and lower limits of frequency, voltage, and temperature corresponding to the safe mode or performance mode. At the same time, obtain the voltage, temperature, and silicon device delay data of the test points when the microprocessor leaves the factory. Based on the obtained data, generate an initial voltage-frequency table. Then, through the test points within the CPU (such as the first test point 8 and the second test point 9), collect the voltage, temperature, and silicon device delay data of the current test point. Next, judge the collected data to check whether there is a situation where the temperature exceeds the upper limit or the voltage exceeds the upper and lower limits. If an overlimit situation occurs, send an interrupt to the CPU, and let the user decide whether to perform a frequency downgrading operation to ensure the safe operation of the processor. When neither the temperature nor the voltage exceeds the limit, calculate the performance degradation factor according to the performance-voltage correlation coefficient β, the performance-temperature correlation coefficient γ, the voltage, temperature, silicon device delay of the test points at the time of leaving the factory, and the corresponding data of the current test point. Judge whether the calculated performance degradation factor exceeds the upper limit. If it exceeds the upper limit, send an interrupt to the CPU, and let the user decide whether to perform a frequency downgrading. If it does not exceed the upper limit, continue with the subsequent process. On the premise that the performance degradation factor does not exceed the upper limit, perform a degradation process on the initial voltage-frequency table to obtain a voltage-frequency configuration table. After obtaining the mode (safe mode or performance mode) currently selected by the user, execute the voltage-frequency configuration table on the voltage-frequency configuration verification module 1 and conduct a test. During the test, a VF Gap parameter (i.e., the difference in voltage and frequency settings between the voltage-frequency configuration verification module 1 and the CPU) can be introduced to optimize the test effect and detect possible problems in advance. If the test result is qualified, execute the adjustment of the processor frequency and voltage to make the processor operate according to the new configuration. If this voltage regulation and frequency modulation method is a periodic trigger mechanism, return to the step of "obtaining the voltage, temperature, and silicon device delay of the current test point through the test points within the CPU" to continue the next round of process and continuously monitor and optimize the operating state of the processor. If the test result is unqualified, upgrade the voltage level of the voltage-frequency configuration table and then conduct the test again. If the result of the second test is still unqualified, send an interrupt to the CPU, and let the user decide whether to perform a frequency downgrading to ensure the stable operation of the system.

[0068] It should be noted that since the voltage regulation and frequency modulation method for the microprocessor used in industrial control in this embodiment can be applied to the voltage regulation and frequency modulation device for the microprocessor used in industrial control in the previous embodiment, the voltage regulation and frequency modulation method for the microprocessor in this embodiment and the voltage regulation and frequency modulation device for the microprocessor in the previous embodiment have the same technical principle and the same beneficial effects. To avoid repetition of content, it will not be elaborated here.

[0069] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to the embodiments shown herein, but rather to the broadest scope consistent with the principles and novel features disclosed herein.

Claims

1. A microprocessor frequency and voltage regulation device for industrial control, characterized in that: include: A first voltage-frequency adaptation module, a second voltage-frequency adaptation module, a parameter acquisition module, a voltage-frequency configuration verification module, a voltage-frequency execution optimization module, and a performance degradation adaptation module connected to each other; the parameter acquisition module is used to acquire an initial measurement parameter set and a current measurement parameter set of a microprocessor; the performance degradation adaptation module calculates a performance impairment factor according to a performance-voltage correlation coefficient β, a performance-temperature correlation coefficient γ, an initial measurement parameter set, and a current measurement parameter set of the microprocessor; the voltage-frequency execution optimization module is used to set a configuration mode of the microprocessor, and to perform impairment processing on an initial voltage-frequency table according to the performance impairment factor, generate a voltage-frequency configuration table, and adjust the voltage and main frequency based on the voltage-frequency configuration table, and configure the first voltage-frequency adaptation module with the adjusted voltage and main frequency, wherein the configuration mode is any one of a safety mode and a performance mode, the safety mode and the performance mode have different main frequencies, and the initial voltage-frequency table is generated according to the configuration mode and the initial measurement parameter set; the voltage-frequency configuration verification module is used to perform a test according to the adjusted voltage and main frequency, and feed back the test result to the voltage-frequency execution optimization module; The voltage-frequency execution optimization module is used to apply the adjusted voltage and main frequency to the second voltage-frequency adaptation module when the test result indicates that the test is qualified.

2. A microprocessor frequency and voltage regulation device for industrial control according to claim 1, characterized in that: The device also includes a register module, and the parameter acquisition module includes a voltage monitoring module, a temperature monitoring module and a silicon device delay monitoring module; wherein the voltage monitoring module is used to measure the voltage of the microprocessor; the temperature monitoring module is used to measure the temperature of the microprocessor; the silicon device delay monitoring module is used to measure the silicon device delay of the microprocessor; the register module is respectively connected to the voltage monitoring module, the temperature monitoring module and the silicon device delay monitoring module, and is used to record the measured voltage, temperature and silicon device delay of the microprocessor.

3. A microprocessor frequency and voltage modulation device for industrial control according to claim 2, characterized in that: The microprocessor is provided with a first test point and a second test point, the first test point is located in the voltage and frequency configuration verification module, and the second test point is located in the microprocessor; the voltage monitoring module, the temperature monitoring module, and the silicon device delay monitoring module are respectively connected to the first test point and the second test point, for obtaining the voltage, the temperature and the silicon device delay of the microprocessor in real time.

4. A microprocessor frequency and voltage modulation device for industrial control according to claim 1, characterized in that: The performance degradation adaptation module is provided with an abnormal alarm unit. When the performance degradation adaptation module detects that the performance degradation reaches a preset performance degradation rate threshold, the abnormal alarm unit outputs a warning signal and sends an interrupt signal to the microprocessor.

5. The microprocessor frequency and voltage regulation device for industrial control according to claim 1, characterized in that: The first voltage-frequency adaptation module includes a first power supply regulation module and a first frequency regulation module, the second voltage-frequency adaptation module includes a second power supply regulation module and a second frequency regulation module, the first power supply regulation module and the first frequency regulation module are both connected to the voltage-frequency execution optimization module and the voltage-frequency configuration verification module, and the second power supply regulation module and the second frequency regulation module are both connected to the voltage-frequency execution optimization module and the microprocessor.

6. A microprocessor frequency and voltage modulation method for industrial control, characterized in that: A microprocessor frequency and voltage modulation device for industrial control as claimed in any one of claims 1 to 5, comprising: Obtaining an initial measurement parameter set and a current measurement parameter set of the microprocessor; Setting a configuration mode of the microprocessor, and generating an initial voltage-frequency table according to the configuration mode and the initial measurement parameter set, wherein the configuration mode is any one of a safety mode and a performance mode, and the safety mode and the performance mode correspond to different main frequencies; Obtaining a performance voltage correlation coefficient β and a performance temperature correlation coefficient γ of the microprocessor; Calculating a performance impairment factor according to the performance voltage correlation coefficient β, the performance temperature correlation coefficient γ, an initial measurement parameter set, and the current measurement parameter set; Performing degradation processing on the initial voltage-frequency table according to the performance degradation factor to generate a voltage-frequency configuration table; Adjusting the main frequency and voltage of the microprocessor based on the voltage-frequency configuration table, and performing a data verification test on the adjusted main frequency and voltage through a verification circuit to obtain a test result; When the test result indicates that the test is qualified, the adjusted main frequency and voltage are applied.

7. A microprocessor frequency and voltage modulation method for industrial control according to claim 6, characterized in that: The initial measurement parameter set includes an initial voltage, an initial temperature and an initial silicon device delay of the microprocessor; The generating an initial voltage-frequency table according to the configuration mode and the initial measurement parameter set comprises: Read the main frequency corresponding to the configuration mode; Determining a relationship curve between voltage and frequency of the microprocessor, and adjusting the relationship curve according to the initial silicon device delay to obtain an optimized voltage and an optimized relationship curve; Establishing a temperature compensation model according to the initial temperature and the optimized relationship curve; Substituting the read main frequency into the temperature compensation model to calculate the voltage value required by the microprocessor at the main frequency; The main frequency and the voltage value corresponding to the main frequency are added to a pre-constructed data structure to form an initial voltage-frequency table.

8. A microprocessor frequency and voltage modulation method for industrial control according to claim 7, characterized in that: The current measurement parameter set includes the current voltage, current temperature and current silicon device delay of the microprocessor; the performance impairment factor is calculated according to the performance voltage correlation coefficient β, the performance temperature correlation coefficient γ, the initial measurement parameter set and the current measurement parameter set, including: Calculating voltage performance according to the performance-voltage correlation coefficient β, the initial voltage and the current voltage; Calculating the temperature performance according to the performance temperature correlation coefficient γ, the initial temperature and the current temperature; A performance degradation factor is calculated according to the voltage performance, the temperature performance, the current silicon device delay and the initial silicon device delay.

9. A microprocessor frequency and voltage modulation method for industrial control according to claim 6, characterized in that: The step of testing the adjusted main frequency and voltage to obtain a test result includes: The key performance indicators of the silicon device inside the microprocessor are monitored, and the working state of the silicon device based on the voltage-frequency configuration table is confirmed according to the key performance indicators to obtain a test result.

10. A microprocessor frequency and voltage modulation method for industrial control according to claim 9, characterized in that: The method further includes: when the test result indicates that the test is unqualified, upgrading the voltage level of the voltage-frequency configuration table and performing self-test, and when the self-test result indicates failure, sending an interrupt request to the microprocessor.

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