Broadband millimeter wave balanced amplifier circuit

Abstract

The invention relates to the technical field of microelectronics, semiconductors and communication, and discloses a broadband millimeter wave balanced amplifier circuit, which is characterized in that the isolation end of a range coupler L1 is connected with one end of a resistor R1; the straight-through end of the range coupler L1 is connected with the grid electrode of the transistor T2, the drain electrode of the transistor T2 is connected with the drain electrode of the transistor T1, the grid electrode of the transistor T1 is connected with the source electrode of the transistor T1, the coupling end of the range coupler L1 is connected with the grid electrode of the transistor T4, the drain electrode of the transistor T4 is connected with the drain electrode of the transistor T3, and the grid electrode of the transistor T3 is connected with the source electrode of the transistor T3; the source electrode of the transistor T1 is connected with the coupling end of the range coupler L2, the source electrode of the transistor T3 is connected with the straight-through end of the range coupler L2, and the isolation end of the range coupler L2 is connected with one end of the resistor R2. Compared with the prior art, the high-gain broadband low-pass filter has the characteristics of higher gain and wider frequency band, due to the existence of the common-gate tube, the output current is further controlled and constrained by the common-gate tube after passing through the common-gate tube, and the equivalent impedance seen from the output end is effectively increased.

Description

Technical Field

[0001] The present invention relates to the technical fields of microelectronics, semiconductors, and communication technologies, and in particular, to a broadband millimeter-wave balanced amplifier circuit. Background Art

[0002] With the rapid development of millimeter-wave communication technologies, more and more communication fields have started to use the millimeter-wave frequency band. Such as commercial 5G and military applications abroad. This has placed higher requirements on the front-end of millimeter-wave receivers and millimeter-wave monolithic microwave integrated circuits (MMICs), specifically manifested in maintaining radio frequency indicators under high-frequency and broadband conditions.

[0003] Currently, domestic millimeter-wave amplifier chips are mostly serialized products, which are highly targeted at specific customer needs. The bandwidth is not universal, which results in the inability to mass-produce the chips, thereby increasing the cost of the chips. Therefore, it is very necessary to study broadband millimeter-wave amplifiers with excellent performance. Common MMIC broadband amplifiers include distributed, feedback, multi-stage common-source, balanced, etc. Distributed amplifiers have good broadband characteristics, but have problems such as large area, high noise, and high production costs; feedback amplifiers have good circuit stability and are not prone to self-oscillation, but have low output power and poor efficiency; multi-stage common-source circuits can meet the requirements of bandwidth, gain, and output power, but have poor stability and are prone to self-oscillation; balanced amplifiers have a smaller area in the high-frequency band, small input and output standing waves, and a large output 1dB gain compression power. Therefore, a balanced amplifier structure can be selected to expand the working bandwidth of the amplifier, reduce the port standing wave, and increase the output power. However, the traditional balanced structure uses a single-stage common-source structure. Due to the existence of the Miller effect, the feedback capacitance from input to output is equivalent to a large input capacitance, thereby reducing the bandwidth of the amplifier. Summary of the Invention

[0004] Based on this, in view of the technical problem of the poor effect of the existing broadband millimeter-wave amplifier circuit, a broadband millimeter-wave balanced amplifier circuit is proposed. The circuit includes: Lange coupler L1, transistor T1, transistor T2, transistor T3, transistor T4, Lange coupler L2;

[0005] The isolation terminal of Lange coupler L1 is connected to one end of resistor R1, and the other end of resistor R1 is grounded;

[0006] The through terminal of Lange coupler L1 is connected to the gate of transistor T2. The drain of transistor T2 is connected to the drain of transistor T1. The source of transistor T2 is grounded, and the gate of transistor T1 is connected to the source of transistor T1;

[0007] The input end of the Lange coupler L1 is the RF signal input end. The coupled end of the Lange coupler L1 is connected to the gate of the transistor T4. The drain of the transistor T4 is connected to the drain of the transistor T3. The source of the transistor T4 is grounded. The gate of the transistor T3 is connected to the source of the transistor T3.

[0008] The source of the transistor T1 is connected to the coupled end of the Lange coupler L2. The source of the transistor T3 is connected to the through end of the Lange coupler L2. The isolated end of the Lange coupler L2 is connected to one end of the resistor R2. The other end of the resistor R2 is grounded. The input end of the Lange coupler L2 is the RF signal output end.

[0009] The broadband millimeter-wave balanced amplifier circuit proposed by the present invention includes: a Lange coupler L1, transistors T1, T2, T3, T4, and a Lange coupler L2. The isolated end of the Lange coupler L1 is connected to one end of the resistor R1, and the other end of the resistor R1 is grounded. The through end of the Lange coupler L1 is connected to the gate of the transistor T2. The drain of the transistor T2 is connected to the drain of the transistor T1. The source of the transistor T2 is grounded. The gate of the transistor T1 is connected to the source of the transistor T1. The input end of the Lange coupler L1 is the RF signal input end. The coupled end of the Lange coupler L1 is connected to the gate of the transistor T4. The drain of the transistor T4 is connected to the drain of the transistor T3. The source of the transistor T4 is grounded. The gate of the transistor T3 is connected to the source of the transistor T3. The source of the transistor T1 is connected to the coupled end of the Lange coupler L2. The source of the transistor T3 is connected to the through end of the Lange coupler L2. The isolated end of the Lange coupler L2 is connected to one end of the resistor R2, and the other end of the resistor R2 is grounded. The input end of the Lange coupler L2 is the RF signal output end. Compared with a general balanced amplifier circuit, the present invention has the characteristics of higher gain and wider bandwidth. Due to the presence of the common-gate transistor, the output current is further controlled and restricted by the common-gate transistor after passing through the common-source transistor, thereby effectively increasing the equivalent impedance seen from the output end. The increase in the output impedance directly leads to a significant increase in gain. Description of the Drawings

[0010] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0011] Among them:

[0012] Figure 1 Schematic diagram of the circuit structure of a broadband millimeter-wave balanced amplifier circuit in an embodiment;

[0013] Figure 2 Gain curve of the circuit according to the present invention as it changes with frequency. Detailed implementation manners

[0014] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which this application belongs; the terms used in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above drawings are intended to cover non-exclusive inclusion. The terms "first", "second", etc. in the specification and claims of this application or the above drawings are used to distinguish different objects and not to describe a specific order.

[0015] Reference to "embodiment" herein means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of this application. The phrase appears in various places in the specification and does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art will explicitly and implicitly understand that the embodiments described herein can be combined with other embodiments.

[0016] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts fall within the protection scope of the present invention.

[0017] Please refer to Figure 1 as shown in Figure 1 A circuit schematic diagram of a broadband millimeter-wave balanced amplifier circuit provided by an embodiment of the present invention, including: Lange coupler L1, transistor T1, transistor T2, transistor T3, transistor T4, Lange coupler L2;

[0018] The isolation terminal of Lange coupler L1 is connected to one end of resistor R1, and the other end of resistor R1 is grounded;

[0019] The through terminal of Lange coupler L1 is connected to the gate of transistor T2, the drain of transistor T2 is connected to the drain of transistor T1, the source of transistor T2 is grounded, and the gate of transistor T1 is connected to the source of transistor T1;

[0020] The input end of the Lange coupler L1 is the RF signal input end. The coupled end of the Lange coupler L1 is connected to the gate of the transistor T4. The drain of the transistor T4 is connected to the drain of the transistor T3. The source of the transistor T4 is grounded. The gate of the transistor T3 is connected to the source of the transistor T3.

[0021] The source of the transistor T1 is connected to the coupled end of the Lange coupler L2. The source of the transistor T3 is connected to the through end of the Lange coupler L2. The isolated end of the Lange coupler L2 is connected to one end of the resistor R2. The other end of the resistor R2 is grounded. The input end of the Lange coupler L2 is the RF signal output end.

[0022] Among them, the RF signal enters from the amplifier input end RFi n. After passing through the Lange coupler, the signal is divided into two paths with the same amplitude and a phase difference of 90°. At the output end, the signals with a phase difference of 90° are combined into an in-phase signal and output from the RFout port.

[0023] Its working principle is as follows: Compared with a general balanced amplifier circuit, the present invention has the characteristics of higher gain and wider bandwidth. Due to the existence of the common-gate transistor, the output current is further controlled and restricted by the common-gate transistor after passing through the common-source transistor, thereby effectively increasing the equivalent impedance seen from the output end. The increase in the output impedance directly leads to a significant increase in gain.

[0024] The above-described embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be included in the protection scope of the present invention.

Claims

1. A broadband millimeter-wave balanced amplifier circuit, characterized in that: The broadband millimeter wave balanced amplifier circuit comprises: a lange coupler L1, a transistor T1, a transistor T2, a transistor T3, a transistor T4, and a lange coupler L2; The isolation terminal of the lange coupler L1 is connected to one end of the resistor R1, and the other end of the resistor R1 is grounded; The through terminal of the lange coupler L1 is connected to the gate of the transistor T2, the drain of the transistor T2 is connected to the drain of the transistor T1, the source of the transistor T2 is grounded, and the gate of the transistor T1 is connected to the source of the transistor T1; The input end of the lange coupler L1 is the RF signal input end, the coupling end of the lange coupler L1 is connected to the gate of the transistor T4, the drain of the transistor T4 is connected to the drain of the transistor T3, the source of the transistor T4 is grounded, and the gate of the transistor T3 is connected to the source of the transistor T3; The source of transistor T1 is connected to the coupling end of lange coupler L2, the source of transistor T3 is connected to the through end of lange coupler L2, the isolation end of lange coupler L2 is connected to one end of resistor R2, the other end of resistor R2 is grounded, and the input end of lange coupler L2 is the RF signal output end.

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