Sensing-memory integrated spinning electronic device, manufacturing method and magnetic random access memory

Abstract

The invention relates to the technical field of magnetic random access memories, and provides an induction-memory integrated spinning electronic device, a manufacturing method and a magnetic random access memory. The sensing-storage integrated spinning electronic device comprises a substrate, a storage layer, a passivation layer, a sensing layer and an electrode layer, the storage layer comprises at least one magnetic tunnel junction, and the magnetic tunnel junction comprises a heavy metal layer, a ferromagnetic free layer, a tunneling layer and a ferromagnetic reference layer which are stacked in sequence; the electrode layer is provided with at least one pair of electrodes, the sensing layer is connected with the pair of electrodes of the electrode layer, and the electrodes are connected with the heavy metal layer through conductive through holes formed in the passivation layer; the induction layer is made of a phase change material and can induce changes of temperature, light intensity, pressure or electric signals and generate current signals, and resistance state overturning of the magnetic tunnel junction is controlled to achieve data storage. The sensing layer is introduced on the basis of the spin-orbit moment storage structure, so that sensing and storage are integrated, and the power consumption and delay of data transmission between the sensing unit and the storage unit are greatly reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of magnetic random access memories, and particularly to a spin electronic device integrating sensing and storage, a manufacturing method thereof, and a magnetic random access memory. Background Art

[0002] Magnetic Random Access Memory (MRAM) based on the magnetoresistive storage mechanism has advantages such as ultra-low power consumption, high speed, and natural radiation resistance, and is very suitable for application scenarios of big data storage and high-speed computing, and can be applied to fields such as the power industry. Among them, Spin Orbital Torque (SOT) MRAM separates the read and write paths of the device, significantly improving the durability and read stability of the device and reducing the switching delay.

[0003] The Internet of Things for Electricity is the application of the Internet of Things in the smart grid. Since the Internet of Things for Electricity needs to deeply analyze and process a large amount of unstructured data, it has high requirements for advanced sensing and efficient computing and storage. At present, data collection, analysis and calculation, and storage in the Internet of Things for Electricity are separately completed by different chips independently, and data needs to be continuously transmitted between different units, resulting in inevitable additional power consumption and delay. At the same time, in the development process of modern semiconductor technology, the performance gap between the processor and the memory is getting larger and larger, resulting in the problem of the "memory wall". These problems will become more and more serious in future data-centric computing tasks, making most of the energy and time consumed in data transmission. Summary of the Invention

[0004] In order to solve the above technical defects, the present invention provides a spin electronic device integrating sensing and storage, a manufacturing method thereof, and a magnetic random access memory.

[0005] On the one hand, the present invention provides a spin electronic device integrating sensing and storage, including: a substrate, a storage layer, a passivation layer, a sensing layer, and an electrode layer, wherein the storage layer and the sensing layer are isolated by the passivation layer;

[0006] The storage layer includes at least one magnetic tunnel junction, and the magnetic tunnel junction includes a heavy metal layer, a ferromagnetic free layer, a tunneling layer, and a ferromagnetic reference layer stacked in sequence;

[0007] The electrode layer has at least a pair of electrodes, the sensing layer is connected to a pair of electrodes of the electrode layer, and at least a pair of electrodes are connected to the heavy metal layer through a conductive through hole formed in the passivation layer;

[0008] The sensing layer is composed of a phase change material, can sense changes in temperature, light intensity, pressure or electrical signals and generate a current signal, and the current signal is used to control the resistance state inversion of the magnetic tunnel junction to achieve data storage.

[0009] In an embodiment of the present invention, the passivation layer includes: a first passivation layer, a second passivation layer, and a third passivation layer; the first passivation layer wraps the heavy metal layer, the ferromagnetic free layer, the tunneling layer, and the ferromagnetic reference layer; the second passivation layer wraps the first passivation layer; the third passivation layer is located on the surface of the second passivation layer.

[0010] In an embodiment of the present invention, at least one pair of electrodes has an electrode connection end; the conductive via passes through the second passivation layer; the electrode connection end is connected to the heavy metal layer through the conductive via.

[0011] In an embodiment of the present invention, the electrode has a transition end, the transition end is connected to the electrode connection end, and the transition end is located inside the third passivation layer.

[0012] In an embodiment of the present invention, the sensing layer is located on the surface of the third passivation layer.

[0013] In an embodiment of the present invention, the passivation layer further includes a fourth passivation layer, and the fourth passivation layer covers the surface of the sensing layer or the side surface of the electrode connection end.

[0014] In an embodiment of the present invention, the materials of the first passivation layer, the second passivation layer, and the third passivation layer are silicon dioxide or silicon nitride; the material of the fourth passivation layer is a light-transmitting insulating material.

[0015] In an embodiment of the present invention, the material of the sensing layer is vanadium oxide.

[0016] On the other hand, the present invention provides a manufacturing method of the above-mentioned integrated sensing and storage spin electronic device, and the method includes:

[0017] Growing a heavy metal layer, a ferromagnetic free layer, a tunneling layer, and a ferromagnetic reference layer on a substrate in sequence to form a magnetic tunnel junction;

[0018] Forming a passivation layer on the substrate with the magnetic tunnel junction;

[0019] Forming a conductive via and an electrode in the passivation layer, connecting one end of the conductive via to the electrode, and connecting the other end to the heavy metal layer;

[0020] Forming a sensing layer on the surface of the passivation layer, and connecting the sensing layer to the electrode.

[0021] In an embodiment of the present invention, forming a passivation layer on the substrate with the magnetic tunnel junction includes:

[0022] Using an etching process to pattern the ferromagnetic free layer, the tunneling layer, and the ferromagnetic reference layer;

[0023] Forming a first passivation layer on the heavy metal layer, the ferromagnetic free layer, the tunneling layer, and the ferromagnetic reference layer;

[0024] Etch the first passivation layer and the heavy metal layer, and form a second passivation layer on the etched first passivation layer.

[0025] In an embodiment of the present invention, forming a conductive via and an electrode in the passivation layer includes:

[0026] Form a via in the second passivation layer;

[0027] Deposit a conductive metal material on the surface and in the via of the second passivation layer, and etch to form an electrode connection end, a transition end, and a conductive via.

[0028] In an embodiment of the present invention, the method further includes:

[0029] Form a third passivation layer on the surface of the second passivation layer having the electrode connection end and the transition end, so that the third passivation layer fills the gap between the electrode connection end and the transition end and covers the transition end;

[0030] Continue to fill the conductive metal material on the surface of the electrode connection end to form an electrode structure.

[0031] In an embodiment of the present invention, forming an induction layer on the surface of the passivation layer includes: depositing vanadium oxide on the surface of the third passivation layer and etching to form an induction layer connected to the electrode structure.

[0032] In an embodiment of the present invention, the method further includes:

[0033] Form a fourth passivation layer on the surface of the third passivation layer, so that the fourth passivation layer covers the surface of the induction layer and the side surface of the electrode connection end.

[0034] The present invention also provides a magnetic random access memory, which includes the above-mentioned integrated sensing and storage spin electronic device.

[0035] Based on the spin-orbit torque storage structure, the present invention introduces an induction layer composed of a phase change material. The induction layer can convert external temperature, pressure, light intensity or electrical signals into corresponding current signals. The magnetic tunnel junction based on spin-orbit torque can perform resistance state flipping according to the level of the current signal, thereby realizing binary data storage. The present invention realizes the integrated integration of sensing and storage by introducing an induction layer on the basis of the spin-orbit torque storage structure, breaking through system limitations such as the "memory wall" and "power consumption wall" caused by the von Neumann storage and computing separation architecture, and greatly reducing the power consumption and latency of data transmission between the sensing unit and the storage unit. Description of the Drawings

[0036] The accompanying drawings described herein are used to provide a further understanding of the present invention, and constitute a part of the present invention. The schematic embodiments of the present invention and their descriptions are used to explain the present invention, and do not constitute an improper limitation of the present invention. In the drawings:

[0037] Figure 1 is a three-dimensional structural schematic diagram of a sense-memory integrated spintronic device provided by an embodiment of the present invention;

[0038] Figure 2 is a cross-sectional structural schematic diagram of a sense-memory integrated spintronic device provided by an embodiment of the present invention;

[0039] Figure 3 is a structural schematic diagram of an induction layer and an electrode layer of a sense-memory integrated spintronic device provided by an embodiment of the present invention;

[0040] Figure 4 is a structural schematic diagram of an electrode connection end and a protruding end of a sense-memory integrated spintronic device provided by an embodiment of the present invention;

[0041] Figure 5 is a flowchart of a manufacturing method of a sense-memory integrated spintronic device provided by an embodiment of the present invention;

[0042] Figures 6a to 6l is a structural schematic diagram formed by each detailed step in the manufacturing method provided by a specific embodiment of the present invention.

[0043] Description of reference numerals

[0044] 1 - Substrate, 2 - Second passivation layer, 5 - Induction layer, 22 - Heavy metal layer, 23 - Ferromagnetic free layer,

[0045] 24 - Tunneling layer, 25 - Ferromagnetic reference layer, 26 - First passivation layer, 31 - Third passivation layer,

[0046] 32 - Fourth transition end, 33 - First transition end, 34 - Second transition end, 41 - Fourth passivation layer,

[0047] 211 - Second conductive via, 212 - Fourth conductive via, 421 - First electrode connection end,

[0048] 422 - Second electrode connection end, 423 - Third electrode connection end, 424 - Fourth electrode connection end. Detailed description of the invention

[0049] In order to make the technical solutions and advantages in the embodiments of the present invention clearer and more understandable, the following further details the exemplary embodiments of the present invention with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than an exhaustive list of all embodiments. It should be noted that, without conflict, the embodiments in the present invention and the features in the embodiments can be combined with each other.

[0050] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus cannot be understood as a limitation of the present invention. The terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, the features defined with "first", "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, the meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise specifically and clearly defined.

[0051] In the present invention, unless otherwise clearly specified and limited, terms such as "connected", "connected to", "joined" should be understood in a broad sense. For example, it can be a mechanical connection, an electrical connection or a communication with each other; it can be directly connected, or indirectly connected through an intermediate medium, and can be the internal connection of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0052] Such as Figure 1 、 Figure 2 and Figure 3As shown in the figure, the integrated sensing and storage spin electronic device provided by the embodiment of the present invention includes: a substrate 1, a storage layer, a passivation layer, a sensing layer 5, and an electrode layer. The storage layer and the sensing layer are isolated by the passivation layer. The storage layer includes at least one magnetic tunnel junction, and the magnetic tunnel junction includes a heavy metal layer 22, a ferromagnetic free layer 23, a tunneling layer 24, and a ferromagnetic reference layer 25 stacked in sequence from bottom to top. The electrode layer has two pairs of electrodes. The sensing layer 5 is connected to a pair of electrodes of the electrode layer. One pair of electrodes or two pairs of electrodes (electrode connection ends 421 / 422 / 423 / 424) are connected to the heavy metal layer 22 of the magnetic tunnel junction through conductive through-holes (211 / 212) formed in the passivation layer. That is, the sensing layer 5 is connected to the heavy metal layer 22 through the electrodes and the conductive through-holes in the passivation layer. The sensing layer 5 is composed of a phase change material, which can sense changes in temperature, light intensity, pressure, or electrical signals and generate a current signal. This current signal is used to control the resistance state inversion of the magnetic tunnel junction to achieve data storage.

[0053] In this embodiment, as Figure 3 shown, the electrode layer is provided with four electrodes, a first electrode, a second electrode, a third electrode, and a fourth electrode. Each electrode has an electrode connection end, that is, a first electrode connection end 421, a second electrode connection end 422, a third electrode connection end 423, and a fourth electrode connection end 424. The sensing layer 5 is connected to the second electrode connection end 422 and the third electrode connection end 423 through wires or conductive structures in the electrode layer.

[0054] In this embodiment, the passivation layer includes a first passivation layer 26, a second passivation layer 2, and a third passivation layer 31. The first passivation layer 26 wraps around the heavy metal layer 22, the ferromagnetic free layer 23, the tunneling layer 24, and the ferromagnetic reference layer 25. The second passivation layer 2 wraps around the first passivation layer 26. The third passivation layer 31 is located on the surface of the second passivation layer 2. The third passivation layer 31 wraps around the electrode connection ends of the electrode layer and exposes the upper surfaces of the electrode connection ends. The materials of the first passivation layer 26, the second passivation layer 2, and the third passivation layer 31 can be selected as silicon dioxide (SiO2) or silicon nitride (Si3N4), etc.

[0055] Specifically, the heavy metal layer 22 is wrapped around by the first passivation layer 26, the lower surface is in contact with the substrate 1, and the upper surface is in contact with the ferromagnetic free layer 23. The ferromagnetic free layer 23 is wrapped around by the first passivation layer 26, the lower surface is in contact with the heavy metal layer 22, and the upper surface is in contact with the tunneling layer 24. The tunneling layer 24 is wrapped around by the first passivation layer 26, the lower surface is in contact with the ferromagnetic free layer 23, and the upper surface is in contact with the ferromagnetic reference layer 25. The ferromagnetic reference layer 25 is wrapped around by the first passivation layer 26, and the upper surface of the ferromagnetic reference layer 25 is in contact with the electrode.

[0056] In this embodiment, at least one pair of electrodes has an electrode connection end and a transition end, and the transition end is connected to the electrode connection end. A conductive via passes through the second passivation layer, and the electrode connection end or the transition end of at least one pair of electrodes is connected to the heavy metal layer through the conductive via. Specifically, as Figure 2 and Figure 4 shown, the first electrode includes a first electrode connection end 421 and a first transition end 33. The first electrode connection end 421 passes through the inside of the third passivation layer 31, and the first transition end 33 is located inside the third passivation layer 31 and is connected to the ferromagnetic reference layer 25. The second electrode includes a second electrode connection end 422, a second transition end 34, and a second conductive via 211. The second electrode connection end 422 passes through the inside of the third passivation layer and is connected to the sensing layer 5. The second transition end 34 is located inside the third passivation layer, and the second conductive via 211 passes through the inside of the first passivation layer 26 and the second passivation layer 2 and is connected to the heavy metal layer 22. The fourth electrode includes a fourth electrode connection end 424 and a fourth transition end 32. The fourth electrode connection end 424 or the fourth transition end 32 is connected to a fourth conductive via 212. The fourth electrode connection end 424 passes through the inside of the third passivation layer 31, the fourth transition end 32 is located inside the third passivation layer 31, and the fourth conductive via 212 passes through the inside of the first passivation layer 26 and the second passivation layer 2 and is connected to the heavy metal layer 22. The specific structure of the third electrode ( Figure 4 not shown) is similar to that of the fourth electrode and will not be described herein again.

[0057] In this embodiment, the sensing layer 5 is located on the surface of the third passivation layer 31. The material of the sensing layer can be selected as vanadium oxide, such as vanadium dioxide (VO2). Vanadium dioxide (VO2) is a functional oxide material with the ability of phase change. It will undergo a reversible transition from a low-temperature insulator phase to a high-temperature metal phase near 340K. Therefore, the vanadium dioxide sensing layer has a phase change characteristic in response to temperature and light intensity. When the external temperature or light intensity is changed, the sensing layer 5 will undergo an insulator-metal phase change, thereby generating a write current sufficient to reverse the spin polarization direction of the ferromagnetic reference layer and realizing the change of the magnetoresistance state of the magnetic tunnel junction.

[0058] In an alternative embodiment, a fourth passivation layer 41 is further provided, and the fourth passivation layer 41 covers the surface of the sensing layer 5 or the sides of the electrode connection ends 421 / 422 / 423 / 424. The material of the fourth passivation layer is a light-transmitting insulating material (such as resin) and will not interfere with the sensing layer's sensing of light intensity. In other embodiments, the fourth passivation layer may not be provided either.

[0059] In an alternative embodiment, the material of the substrate 1 is a silicon wafer. The material of the heavy metal layer 22 is one or any combination of platinum, aluminum, nickel, copper, titanium, gold, tantalum, tantalum nitride, and titanium nitride. The materials of the ferromagnetic free layer 23 and the ferromagnetic reference layer 25 are one or any combination of nickel iron, cobalt iron boron, cobalt platinum, and gadolinium iron cobalt. The material of the tunneling layer 24 is magnesium oxide and / or aluminum oxide. The material of the electrode is one or any combination of titanium, gold, and silver.

[0060] When the device performs a read operation, a positive voltage and a negative voltage are respectively applied to the second electrode connection terminal 422 and the first electrode connection terminal 421. The read current sequentially flows through the second electrode connection terminal 422, the second transition terminal 34, the second conductive via 211, the heavy metal layer 22, the ferromagnetic free layer 23, the tunneling layer 24, and the ferromagnetic reference layer 25, the first transition terminal 33, and the first electrode connection terminal 421. By measuring the magnitude of the read current, the high or low state of the magnetoresistance of the magnetic tunnel junction is determined, thereby obtaining the magnetoresistance state of the magnetic tunnel junction during the previous write operation.

[0061] The present invention introduces an induction layer composed of a phase change material on the basis of a spin-orbit torque storage structure. The induction layer can convert external temperature, pressure, light intensity, or electrical signals into corresponding current signals. The magnetic tunnel junction based on spin-orbit torque can perform a resistance state flip according to the high or low of the current signal, thereby realizing binary data storage. The present invention realizes the integrated integration of sensing and storage by introducing an induction layer on the basis of a spin-orbit torque storage structure, breaking system limitations such as the "memory wall" and "power consumption wall" caused by the von Neumann storage and computing separation architecture, and greatly reducing the power consumption and latency of data transmission between the sensing unit and the storage unit.

[0062] The integrated sensing and storage spin electronic device provided by the embodiment of the present invention integrates the sensing and storage functions on the same chip, can quickly read and store data, while reducing the time and energy consumption of data transmission and storage, improving the efficiency of data processing and storage, and reducing the number and occupied space of sensors and memories, while reducing the maintenance cost and failure rate of the device. The device can be applied to the monitoring and control of temperature, pressure, optical, and electrical signals of each node of the power network, realizing the intelligent scheduling and optimization of power equipment and power loads, and improving the safety, stability, and reliability of the power system.

[0063] The embodiment of the present invention also provides a manufacturing method for the above integrated sensing and storage spin electronic device. As Figure 5 shown, the manufacturing method includes the following steps:

[0064] S510, growing a heavy metal layer, a ferromagnetic free layer, a tunneling layer, and a ferromagnetic reference layer on the substrate in sequence to form a magnetic tunnel junction;

[0065] S520, form a passivation layer on the substrate with a magnetic tunnel junction;

[0066] S530, form a conductive via and an electrode in the passivation layer, connect one end of the conductive via to the electrode, and the other end to the heavy metal layer;

[0067] S540, form an induction layer on the surface of the passivation layer, connect the induction layer to the electrode.

[0068] In the above step S520, use an etching process to pattern the ferromagnetic free layer, tunneling layer, and ferromagnetic reference layer; form a first passivation layer on the heavy metal layer, ferromagnetic free layer, tunneling layer, and ferromagnetic reference layer; etch the first passivation layer and the heavy metal layer, and form a second passivation layer on the etched first passivation layer.

[0069] In the above step S530, form a via in the second passivation layer, deposit a conductive metal material on the surface and in the via of the second passivation layer, and perform etching to form an electrode connection end, a transition end, and a conductive via. Then, form a third passivation layer on the surface of the second passivation layer with the electrode connection end and the transition end, fill the gap between the electrode connection end and the transition end with the third passivation layer, and cover the transition end; continue to fill the conductive metal material on the surface of the electrode connection end to form an electrode structure.

[0070] In the above step S540, deposit vanadium oxide on the surface of the third passivation layer, and perform etching to form an induction layer connected to the electrode structure.

[0071] In addition, a fourth passivation layer can also be formed on the surface of the third passivation layer to cover the surface of the induction layer and the side surface of the electrode connection end. The material of the fourth passivation layer is selected as a light-transmitting insulating material, such as resin.

[0072] In a specific embodiment, the detailed steps of the above manufacturing method are as follows:

[0073] As Figure 6a shown, grow a heavy metal layer 22, a ferromagnetic free layer 23, a tunneling layer 24, and a ferromagnetic reference layer 25 on the substrate 1 in sequence. In this step, use a magnetron sputtering process to complete the deposition of each film layer of the magnetic tunnel junction.

[0074] As Figure 6b shown, pattern the ferromagnetic reference layer 25, pattern the tunneling layer 24 and the ferromagnetic free layer 23. In this step, use an ion beam etching (IBE) process to form the structures of the ferromagnetic reference layer 25, the tunneling layer 24, and the ferromagnetic free layer 23.

[0075] As Figure 6cAs shown, using a chemical vapor deposition (CVD) process, silicon oxide is deposited on the ferromagnetic reference layer 25 and the heavy metal layer 22 respectively to form the lower end 262 of the first passivation layer and the upper end 261 of the first passivation layer.

[0076] As Figure 6d shown, using a photolithography and ion beam etching (IBE) process, the lower end 262 of the first passivation layer and the heavy metal layer 22 are patterned.

[0077] As Figure 6e shown, using a chemical vapor deposition (CVD) process, the second passivation layer 2 is continuously grown, and the magnetic tunnel junction is covered by the passivation layer to form the structure 27 as shown in the figure.

[0078] As Figure 6f shown, using a chemical mechanical polishing (CMP) process, the surface of the second passivation layer 2 is planarized to expose the ferromagnetic reference layer 25 and the upper end 261 of the first passivation layer.

[0079] As Figure 6g shown, using a photolithography and ion beam etching (IBE) process, two vias are formed on the surface of the second passivation layer 2 to prepare for the fabrication of the second conductive via 211 and the fourth conductive via 212.

[0080] As Figure 6h shown, using a photolithography and magnetron sputtering process, a conductive metal material is deposited on the surface of the second passivation layer 2 to form the first electrode connection end 421, the second electrode connection end 422, the third electrode connection end 423, the fourth electrode connection end 424, the first transition end 33, the second transition end 34, and the fourth transition end 32. At the same time, the two vias on the surface of the second passivation layer 2 are filled to form the second conductive via 211 and the fourth conductive via 212.

[0081] As Figure 6i shown, using a photolithography and chemical vapor deposition (CVD) process, silicon oxide is grown to form the third passivation layer 31, and the top surfaces of the first electrode connection end 421, the second electrode connection end 422, the third electrode connection end 423, and the fourth electrode connection end 424 are exposed, and the side surface of the fourth transition end 32 is exposed.

[0082] As Figure 6j shown, on the top surfaces of the first electrode connection end 421, the second electrode connection end 422, the third electrode connection end 423, and the fourth electrode connection end 424, a metal conductive material is continuously filled to form four electrodes.

[0083] As Figure 6k shown, using a magnetron sputtering process, vanadium dioxide VO2 is deposited on the surface of the third passivation layer 31 to form the induction layer 5, and the induction layer 5 is patterned using a photolithography and ion beam etching (IBE) process to form the structure of the induction layer 5.

[0084] As Figure 6l shown, a light-transmissive insulating material is deposited on the third passivation layer 31 and the sensing layer 5 to form a fourth passivation layer 41, exposing the first electrode connection end 421, the second electrode connection end 422, the third electrode connection end 423, and the fourth electrode connection end 424, thereby obtaining a sense-memory integrated spin electronic device.

[0085] An embodiment of the present invention further provides a magnetic random access memory, which includes the above-mentioned sense-memory integrated spin electronic device.

[0086] The optional embodiments of the present invention have been described in detail above with reference to the accompanying drawings. However, the embodiments of the present invention are not limited to the specific details in the above embodiments. Within the technical concept scope of the embodiments of the present invention, various simple modifications can be made to the technical solutions of the embodiments of the present invention, and these simple modifications all fall within the protection scope of the embodiments of the present invention. Additionally, it should be noted that, in the above specific embodiments, the various specific technical features described can be combined in any suitable manner as long as the combination does not violate the idea of the embodiments of the present invention, and it should also be regarded as the content disclosed by the embodiments of the present invention.

Claims

1. A sensor-storage integrated spin electronic device, characterized in that: include: A substrate, a storage layer, a passivation layer, a sensing layer and an electrode layer, wherein the storage layer and the sensing layer are isolated from each other by the passivation layer; The storage layer includes at least one magnetic tunnel junction, and the magnetic tunnel junction includes a heavy metal layer, a ferromagnetic free layer, a tunnel layer, and a ferromagnetic reference layer stacked in sequence; The electrode layer has at least one pair of electrodes, the sensing layer is connected to the pair of electrodes of the electrode layer, and the at least one pair of electrodes is connected to the heavy metal layer through a conductive through hole formed in the passivation layer; The sensing layer is made of phase change material, and can sense changes in temperature, light intensity, pressure or electrical signals and generate current signals. The current signals are used to control the resistance state reversal of the magnetic tunnel junction to achieve data storage.

2. The sensor-storage integrated spin electronic device according to claim 1, characterized in that: The passivation layer includes: a first passivation layer, a second passivation layer and a third passivation layer; The first passivation layer wraps the heavy metal layer, the ferromagnetic free layer, the tunneling layer and the ferromagnetic reference layer; The second passivation layer wraps the first passivation layer; The third passivation layer is located on the surface of the second passivation layer.

3. The sensor-storage integrated spin electronic device according to claim 2, characterized in that: At least one pair of electrodes has electrode connection ends; The conductive via passes through the second passivation layer; The electrode connection end is connected to the heavy metal layer through the conductive through hole.

4. The sensor-storage integrated spin electronic device according to claim 3, characterized in that: The electrode has a transition end, the transition end is connected to the electrode connection end, and the transition end is located inside the third passivation layer.

5. The sensor-storage integrated spin electronic device according to claim 3, characterized in that: The sensing layer is located on the surface of the third passivation layer.

6. The sensor-storage integrated spin electronic device according to claim 5, characterized in that: The passivation layer further includes a fourth passivation layer, and the fourth passivation layer covers the surface of the sensing layer or the side of the electrode connection terminal.

7. The sensor-storage integrated spin electronic device according to claim 6, characterized in that: The materials of the first passivation layer, the second passivation layer and the third passivation layer are silicon dioxide or silicon nitride; The material of the fourth passivation layer is a light-transmitting insulating material.

8. The sensor-storage integrated spin electronic device according to claim 1, characterized in that: The material of the sensing layer is vanadium oxide.

9. A method for manufacturing a sensor-storage integrated spin electronic device, characterized in that: The sensing-storage integrated spin electronic device is the sensing-storage integrated spin electronic device according to claim 1, and the method comprises: A heavy metal layer, a ferromagnetic free layer, a tunneling layer and a ferromagnetic reference layer are sequentially grown on the substrate to form a magnetic tunnel junction; forming a passivation layer on the substrate having the magnetic tunnel junction; forming a conductive via and an electrode in the passivation layer, so that one end of the conductive via is connected to the electrode and the other end is connected to the heavy metal layer; A sensing layer is formed on the surface of the passivation layer, and the sensing layer is connected to the electrode.

10. The method for manufacturing a sensor-storage integrated spin electronic device according to claim 9, characterized in that: A passivation layer is formed on a substrate having a magnetic tunnel junction, comprising: The ferromagnetic free layer, the tunneling layer and the ferromagnetic reference layer are patterned by an etching process; forming a first passivation layer on the heavy metal layer, the ferromagnetic free layer, the tunneling layer and the ferromagnetic reference layer; The first passivation layer and the heavy metal layer are etched to form a second passivation layer on the etched first passivation layer.

11. The method for manufacturing a sensor-storage integrated spin electronic device according to claim 10, characterized in that: Forming conductive vias and electrodes within the passivation layer, including: forming a through hole in the second passivation layer; Conductive metal material is deposited on the surface of the second passivation layer and in the through hole, and then etched to form electrode connection terminals, transition terminals and conductive through holes.

12. The method for manufacturing a sensor-storage integrated spin electronic device according to claim 11, characterized in that: The method further comprises: forming a third passivation layer on the surface of the second passivation layer having the electrode connection end and the transition end, so that the third passivation layer fills the gap between the electrode connection end and the transition end and covers the transition end; The surface of the electrode connection end is continuously filled with conductive metal material to form an electrode structure.

13. The method for manufacturing a sensor-storage integrated spin electronic device according to claim 12, characterized in that: A sensing layer is formed on the surface of the passivation layer, including: Vanadium oxide is deposited on the surface of the third passivation layer and etched to form a sensing layer connected to the electrode structure.

14. The method for manufacturing a sensor-storage integrated spin electronic device according to claim 13, characterized in that: The method further comprises: A fourth passivation layer is formed on the surface of the third passivation layer, so that the fourth passivation layer covers the surface of the sensing layer and the side surface of the electrode connection end.

15. A magnetic random access memory, characterized in that: The magnetic random access memory comprises the sensor-storage integrated spin electronic device as described in any one of claims 1-8.

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