Substrate tracking and conveying system for magnetron sputtering and control method

Abstract

The invention relates to the technical field of magnetron sputtering, and discloses a magnetron sputtering substrate tracking and conveying system and a control method, and the magnetron sputtering substrate tracking and conveying system comprises a transition conveying mechanism, a driven shaft transition conveying mechanism, a driven area mechanism, a main shaft conveying mechanism and a control module, the substrate position information is obtained, the conveying speed of the substrates conveyed by all the mechanisms is controlled, and the alternative synchronous relation between the driven area mechanism and the driven shaft transition conveying mechanism and the alternative synchronous relation between the driven area mechanism and the main shaft conveying mechanism are determined. The servo motor with a quintic polynomial speed planning algorithm is limited from the angles of speed, acceleration, jitter and the like to drive all the conveying belts, and meanwhile flexible piece chasing is completed through cooperation of the speed synchronization and de-synchronization relation of the unpowered driven-shaft driven substrate conveying belt, the driven-shaft substrate conveying belt and the main-shaft substrate conveying belt. Therefore, the distance between the substrates is stabilized near a set value, and meanwhile, the substrates are prevented from being impacted and broken due to shaking.

Description

Technical Field

[0001] The present invention relates to the technical field of magnetron sputtering, and particularly relates to a substrate chasing and conveying system and a control method for magnetron sputtering. Background Art

[0002] Magnetron sputtering is one of the vacuum coating technologies and is a physical vapor deposition technology. It is widely used in industrial coating due to many advantages such as low temperature, high film-forming efficiency, and good film quality. A magnetron sputtering device is a vacuum coating device, and it takes a certain time to reach the corresponding process vacuum degree. Therefore, a general vacuum chamber is divided into a wafer loading chamber, a buffer chamber, and a transition chamber, which are the front-stage chambers above; and the chamber for actual coating is the sputtering coating chamber. (According to the production volume requirements, the more front-stage chambers, the smaller the corresponding vacuum range of this chamber, which is more conducive to mass production)

[0003] In a mass-production magnetron sputtering device, multiple sputtering targets can be used in the sputtering coating chamber. Substrates pass through the sputtering coating chamber at a constant speed, and a film layer can be formed. In actual production, the target is very expensive. The closer the distance between substrates, the less waste of the target. At the same time, within the same time, the more substrates are output, the higher the production volume.

[0004] Most existing magnetron sputtering devices do not have a substrate chasing function and usually feed the substrates into the sputtering coating chamber at a fixed speed and a fixed distance. Because under vacuum conditions, if the position control of the front and rear substrates is far, the target material will be deposited on the chamber wall of the vacuum chamber along with the gap between the substrates, which is difficult and improper to clean and wastes expensive targets. If the position control of the front and rear substrates is close, it may cause the front and rear substrates to collide, resulting in glass breakage, affecting the production progress and the yield rate; and the glass fragments may enter the vacuum pump along the vacuum pipeline, damaging the vacuum pump and causing the equipment to stop.

[0005] To prevent this phenomenon, some devices will install a mechanical limit structure on the conveyor belt to physically separate the front and rear substrates. However, this mechanical limit structure needs to be maintained frequently. Once a failure occurs, the substrates will also collide with the mechanical limit structure.

[0006] For a magnetron sputtering device with a substrate chasing function, from the transition chamber (or the chamber adjacent to the sputtering coating chamber) to the sputtering coating chamber, the substrate needs to go through the following process: the transition chamber is evacuated to the same vacuum degree as the sputtering coating chamber, the valve is opened, and the motor conveys the substrate into the pre-chamber of the sputtering coating chamber. And before the front substrate enters the sputtering coating chamber, it catches up with the front substrate and enters the sputtering coating chamber at a nearly the same distance and the same speed to start the process sputtering.

[0007] Since current devices are all based on PLC control, and most PLCs are developed for process control and are not good at motion control, it is difficult to achieve flexible control for the chasing motion of wafers. That is, the speed does not change suddenly, the acceleration is continuously differentiable, and discontinuous acceleration will cause the motor to shake or even impact. During the process of the rear wafer chasing the front wafer, due to the lack of flexible control and the sudden change in speed, due to the inertia of the wafer carrier plate, the wafer carrier plate slips, causing the wafer to overshoot and hit the front wafer, which easily causes chipping and unnecessary losses, and the yield rate will decrease. Summary of the Invention

[0008] The purpose of the present invention is to provide a substrate chasing and conveying system and a control method for magnetron sputtering, so as to solve the following technical problems:

[0009] How to improve the efficiency and quality of wafer chasing during the operation of the magnetron sputtering equipment, and improve the yield rate and production volume.

[0010] The purpose of the present invention can be achieved through the following technical solutions:

[0011] A substrate chasing and conveying system for magnetron sputtering includes:

[0012] A transition conveying mechanism, including a transition substrate conveyor belt and a first detection point and a second detection point respectively arranged at both ends of the transition substrate conveyor belt;

[0013] A slave-axis transition conveying mechanism, including a slave-axis substrate conveyor belt and a third detection point and a fourth detection point respectively arranged at both ends of the slave-axis substrate conveyor belt;

[0014] A driven area mechanism, including an unpowered slave-axis passive substrate conveyor belt and a fifth detection point and a sixth detection point respectively arranged at both ends of the slave-axis passive substrate conveyor belt;

[0015] A main-axis conveying mechanism, including a main-axis substrate conveyor belt and a seventh detection point arranged at the starting end of the main-axis substrate conveyor belt, and the main-axis substrate conveyor belt transports the substrate at a constant speed;

[0016] A control module, connected to the transition conveying mechanism, the slave-axis transition conveying mechanism, the driven area mechanism and the main-axis conveying mechanism, is used to obtain the substrate position information, control the conveying speed of each mechanism for transporting the substrate, and determine an alternative synchronization relationship between the driven area mechanism and the slave-axis transition conveying mechanism and the main-axis conveying mechanism.

[0017] Through the above technical solutions, based on the concept of flexible control, the present invention can limit the driving of the servo motor with a fifth-order polynomial speed planning algorithm for each conveyor belt from the perspectives of speed, acceleration, jitter, etc. by artificially setting conditions. At the same time, through the cooperation of the speed synchronization and desynchronization relationships between the unpowered slave-axis passive substrate conveyor belt, the slave-axis substrate conveyor belt, and the main-axis substrate conveyor belt, flexible chip chasing is completed, so that the distance between substrates is stably maintained near the set value, and the substrates will not be impacted and chipped due to jitter.

[0018] As a further solution of the present invention: a flap valve is provided between the transition substrate conveyor belt and the slave-axis substrate conveyor belt;

[0019] When the substrate carried by the slave-axis passive substrate conveyor belt leaves the sixth detection point, the control module drives the slave-axis substrate conveyor belt to perform a chip chasing process on the carried substrate;

[0020] When the substrate carried by the slave-axis substrate conveyor belt leaves the fourth detection point, the control module drives the flap valve to open and drives the transition substrate conveyor belt to perform the chip chasing process on the carried substrate.

[0021] A substrate chip chasing and conveying control method for magnetron sputtering includes a chip chasing process;

[0022] The chip chasing process includes:

[0023] Generate a trajectory equation L according to the initialization parameters and limiting conditions;

[0024] According to the trajectory equation L, the conveying speed V of the main-axis substrate conveyor belt (7) m and the chip chasing distance D of the slave-axis passive substrate conveyor belt (10), determine the expected synchronization completion time T and the shortest chip chasing time T m ;

[0025] Judge whether T>T m is satisfied. If it is satisfied, synchronization is possible; otherwise, synchronization is not possible. As a further solution of the present invention: the method for generating the trajectory equation L according to the initialization parameters and limiting conditions includes:

[0026] Take the fifth-order polynomial equation as the basic equation:

[0027] L(t) = a0 + a1t + a2t 2 + a3t 3 + a4t 4 + a5t 5

[0028] Set the initial conditions:

[0029] Initial position: L(0) = p o

[0030] Final position: L(T) = p d

[0031] Initial velocity:

[0032] Final velocity:

[0033] Initial acceleration:

[0034] Final acceleration:

[0035] Obtained according to the basic equation:

[0036] Velocity equation:

[0037] Acceleration equation:

[0038] Jitter equation:

[0039] After normalizing the velocity equation, the acceleration equation, and the jitter equation, set the limiting conditions;

[0040] The normalization process:

[0041] P(n) = a0 + a1n + a2n 2 + a3n 3 + a4n 4 + a5n 5

[0042]

[0043]

[0044]

[0045] The limiting conditions are respectively the velocity limit value v lim 、acceleration limit value a lim 、jitter limit value j lim 。

[0046] As a further solution of the present invention: The method for determining the expected synchronization completion time T and the shortest chasing time T m includes:

[0047]

[0048]

[0049]

[0050]

[0051] Among them, are the normalized speed equation, acceleration equation, and jitter equation respectively.

[0052] As a further solution of the present invention: The calculation method of T m includes:

[0053]

[0054] Among them, P m is the traveling distance of the substrate driven by the main shaft substrate conveyor belt during the substrate chasing process.

[0055] Beneficial effects of the present invention: Based on the concept of flexible control, the present invention can limit the driving of the servo motors with the fifth-order polynomial speed planning algorithm for each conveyor belt from the perspectives of speed, acceleration, jitter, etc. by artificially setting conditions. At the same time, through the cooperation of the speed synchronization and desynchronization relationships between the unpowered slave shaft passive substrate conveyor belt and the slave shaft substrate conveyor belt and the main shaft substrate conveyor belt, flexible substrate chasing is completed, so that the distance between substrates is stably maintained near the set value, and the substrates will not be impacted and chipped due to jitter. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] The present invention will be further described below with reference to the accompanying drawings.

[0057] Figure 1 is a schematic diagram of the magnetron sputtering equipment body involved in the present invention;

[0058] Figure 2 is a schematic diagram of the first stage of substrate chasing in the present invention;

[0059] Figure 3 is a schematic diagram of the second stage of substrate chasing in the present invention;

[0060] Figure 4 is a schematic diagram of the third stage of substrate chasing in the present invention;

[0061] Figure 5 is a schematic flow diagram of the substrate chasing and conveying control method for magnetron sputtering in the present invention;

[0062] Figure 6 is a schematic diagram of the chasing simulation in the present invention;

[0063] Figure 7 is a graph of the position, speed, acceleration, and jitter of the slave shaft using an electronic cam table for position plotting in the present invention.

[0064] Brief Description of the Drawings: 1. Transition chamber; 2. From-axis transition chamber; 3. Driven area; 4. Sputtering coating chamber; 5. Transition substrate conveyor belt; 6. From-axis substrate conveyor belt; 7. Main-axis substrate conveyor belt; 81. Substrate carrier 1; 82. Substrate carrier 2; 83. Substrate carrier 3; 9. Flap valve; 10. From-axis passive substrate conveyor belt; 01. First detection point; 02. Second detection point; 03. Third detection point; 04. Fourth detection point; 05. Fifth detection point; 06. Sixth detection point; 07. Seventh detection point. Detailed Embodiment

[0065] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative efforts belong to the scope of protection of the present invention.

[0066] Please refer to Figure 1 As shown, it is a schematic diagram of the principle structure of the magnetron sputtering equipment body. The substrate is transported by the carrier on the conveyor belt, passing through the flap valve and the transition chamber in sequence, and then sent to the sputtering chamber through the pre-sputtering chamber for sputtering coating by the target.

[0067] A substrate chasing and conveying system for magnetron sputtering disclosed in the present embodiment of the present invention is arranged in the above-mentioned magnetron sputtering equipment body and includes:

[0068] A transition conveying mechanism, including a transition substrate conveyor belt 5 arranged in the transition chamber 1 and a first detection point 01 and a second detection point 02 respectively arranged at both ends of the transition substrate conveyor belt 5;

[0069] A from-axis transition conveying mechanism, including a from-axis substrate conveyor belt 6 arranged in the from-axis transition chamber 2 of the pre-sputtering chamber and a third detection point 03 and a fourth detection point 04 respectively arranged at both ends of the from-axis substrate conveyor belt 6;

[0070] A driven area 3 mechanism, including an unpowered from-axis passive substrate conveyor belt 10 arranged in the driven area 3 of the pre-sputtering chamber and a fifth detection point 05 and a sixth detection point 06 respectively arranged at both ends of the from-axis passive substrate conveyor belt 10;

[0071] A main-axis conveying mechanism, including a main-axis substrate conveyor belt 7 arranged in the sputtering coating chamber 4 and a seventh detection point 07 arranged at the starting end of the main-axis substrate conveyor belt 7, and the main-axis substrate conveyor belt 7 transports the substrate at a constant speed;

[0072] The control module is designed based on a PLC and is connected to the transition transfer mechanism, the slave-axis transition transfer mechanism, the slave area 3 mechanism, and the main-axis transfer mechanism. It is used to obtain substrate position information, control the conveying speed of each mechanism for transferring the substrate, and determine the alternative synchronization relationship between the slave area 3 mechanism and the slave-axis transition transfer mechanism and the main-axis transfer mechanism.

[0073] Through the above technical solution, based on the concept of flexible control, the present invention can limit the driving of the servo motor with a fifth-order polynomial speed planning algorithm for each conveyor belt from the perspectives of speed, acceleration, jitter, etc. by artificially setting conditions. At the same time, through the cooperation of the speed synchronization and desynchronization relationship between the unpowered slave-axis passive substrate conveyor belt 10 and the slave-axis substrate conveyor belt 6 and the main-axis substrate conveyor belt 7, flexible substrate chasing is completed, so that the distance between substrates is stably maintained near the set value, and the substrates will not be impacted and chipped due to jitter.

[0074] In the present embodiment of the present invention, a flap valve 9 is provided between the transition substrate conveyor belt 5 and the slave-axis substrate conveyor belt 6. The transition substrate conveyor belt 5, the slave-axis substrate conveyor belt 6, and the main-axis substrate conveyor belt 7 are respectively driven by servo motors. The position of each substrate is determined by a transmissive optical device at each detection point. When the substrate passes through the transmissive optical device, the light eye position responsible for receiving the transmissive light cannot receive the optical signal, and at this time, it is determined that the laser passes through this detection point;

[0075] When the substrate carried by the slave-axis passive substrate conveyor belt 10 leaves the sixth detection point 06, the control module drives the slave-axis substrate conveyor belt 6 to perform the substrate chasing process on the carried substrate;

[0076] When the substrate carried by the slave-axis substrate conveyor belt 6 leaves the fourth detection point 04, the control module drives the flap valve 9 to open and drives the transition substrate conveyor belt 5 to perform the substrate chasing process on the carried substrate.

[0077] A substrate chasing and conveying control method for magnetron sputtering includes a substrate chasing process;

[0078] The substrate chasing process includes, as Figure 2 shown in the schematic diagram of the first stage of substrate chasing:

[0079] To obtain a uniform coating effect, the main-axis substrate conveyor belt 7 always maintains a constant speed of movement;

[0080] When the No. 3 substrate carrier 83 is located in the transition chamber 1 and moves to the second detection point 02, the second detection point 02 sends a signal to the PLC, and the PLC outputs a signal and stops the transition substrate conveyor belt 5. At this time, the flap valve 9 is closed, and the buffer chamber is evacuated from a low vacuum degree to the same vacuum degree as the pre-sputtering chamber and the sputtering chamber, and then waits to transfer the substrate;

[0081] When the 2nd substrate carrier 82 located in the slave axis transition chamber 2 moves to the fourth detection point 04, the fourth detection point 04 sends a signal to the PLC. The PLC outputs a signal and stops the slave axis substrate conveyor belt 6, waiting for the signal triggering of chasing the substrate;

[0082] When the tail of the 1st substrate carrier 81 located in the driven area 3 moves to the sixth detection point 06, that is, when the 1st substrate carrier 81 just leaves the slave axis passive substrate conveyor belt 10, the sixth detection point 06 sends a signal to the PLC. The PLC outputs a signal to drive the slave axis substrate conveyor belt 6 through the servo motor, and starts the chasing movement of the 2nd substrate carrier 82 chasing the 1st substrate carrier 81; before the 1st substrate carrier 81 leaves the slave axis passive substrate conveyor belt 10, the conveying speed of the slave axis passive substrate conveyor belt 10 needs to be synchronized with the main axis substrate conveyor belt 7.

[0083] During the process that the tail of the 1st substrate carrier 81 moves from the sixth detection point 06 to the seventh detection point 07 at a set speed, the 2nd substrate carrier 82 starts to accelerate chasing the substrate from the fourth detection point 04 with the acceleration under the quintic polynomial speed planning algorithm, and starts to decelerate after accelerating to the maximum speed during the movement. When moving to the relevant specified position of the quintic polynomial speed planning algorithm, at this time the slave axis substrate conveyor belt 6 just decelerates to the same speed as the main axis substrate conveyor belt 7 and maintains a constant speed operation.

[0084] As Figure 2 shown in the schematic diagram of the second stage of chasing the substrate:

[0085] Continuing from the end of the first stage of chasing the substrate, the head of the 2nd substrate carrier 82 approaches the tail of the 1st substrate carrier 81. In this embodiment, in order to prevent impact and chipping, the distance between the two substrates is set at 2 - 5 cm; at this time, the slave axis substrate conveyor belt 6 has not yet been desynchronized from the slave axis passive substrate conveyor belt 10 or the main axis substrate conveyor belt 7, and the 1st and 2nd substrate carriers 82 still run at the same speed because the tail of the 2nd substrate carrier 82 has not yet left the slave axis substrate conveyor belt 6;

[0086] As Figure 3 shown in the schematic diagram of the third stage of chasing the substrate:

[0087] When the tail of the 2nd substrate carrier 82 moves to the fourth detection point 04 and leaves at the next moment, the signal of the fourth detection point 04 disappears. The fourth detection point 04 sends a signal to the PLC. The PLC outputs a signal and drives the transition substrate conveyor belt 5 to start chasing the substrate;

[0088] After the tail of the No. 2 substrate carrier 82 moves uniformly from the fourth detection point 04 to the sixth detection point 06 at the process speed at the tail of the No. 2 substrate carrier 82, the flap valve 99 is opened. The No. 3 substrate carrier 83 accelerates to chase the wafer starting from the second detection point 02 with the acceleration under the fifth-order polynomial speed planning algorithm, and accelerates to the maximum speed and starts to decelerate during the movement. When it moves to the specified position related to the fifth-order polynomial speed planning algorithm, that is, at the fourth detection point 04, at this time, the transfer substrate conveyor belt 5 just decelerates to 0 and starts to wait for the No. 2 substrate carrier 82 to move to the sixth detection point 06. By then, the No. 2 substrate starts from Figure 1 the repeated process shown.

[0089] As shown in the above content, the wafer chasing process of the magnetron sputtering equipment is divided into two parts. One part is that the No. 2 substrate carrier 82 chases the No. 1 substrate carrier 81, and the other part is that the No. 3 substrate carrier 83 chases the No. 2 substrate carrier 82. The technical principles of the two parts are exactly the same, only the set parameters are different. Therefore, in the following, the No. 2 substrate carrier 82 chasing the No. 1 substrate carrier 81 is used to describe the device and algorithm process in combination.

[0090] Refer to Figure 2 (The unit of dimension in the figure is mm). When the No. 2 substrate carrier 82 located in the slave axis transition chamber 2 moves to the fourth detection point 04, the fourth detection point 04 sends a signal to the PLC, and the PLC outputs a signal and stops the slave axis substrate conveyor belt 6, waiting for the wafer chasing signal to trigger;

[0091] When the tail of the No. 1 substrate carrier 81 located in the driven area 3 moves to the sixth detection point 06, that is, when the No. 1 substrate carrier 81 just leaves the slave axis passive substrate conveyor belt 10, the sixth detection point 06 sends a signal to the PLC, and the PLC outputs a signal to drive the slave axis substrate conveyor belt 6 through the servo motor, and starts the wafer chasing movement of the No. 2 substrate carrier 82 chasing the No. 1 substrate carrier 81;

[0092] According to the planning conditions under the fifth-order polynomial speed planning algorithm, during the process of the tail of the No. 1 substrate carrier 81 moving uniformly from the sixth detection point 06 to the seventh detection point 07 at the set speed, the walking distance is 30 cm, and the clock keeps moving at a uniform speed of 5 cm / s, that is, the wafer chasing is completed within 6 s. When the tail of the No. 1 substrate carrier 81 moves to or before the fourth detection point, the head of the No. 2 substrate carrier 82 is as close as possible to the tail of the No. 1 substrate carrier 81. In order to prevent wafer chasing, a certain margin is left, which is set to 2 cm. Three limit conditions v lim 、a lim 、j lim are set. That is, 6 initial conditions. From the fourth detection point 04 to the seventh detection point, the moving distance D = 80 + 30 - 2 = 108 cm, then the initial position p o = 0, and the final position p d = 108. The initial velocity v o=0, final velocity v d = spindle speed = 5cm / s. Initial acceleration a o =0, final acceleration a d =0.

[0093] In the specific implementation process, the film tracking process includes:

[0094] Step SK1, judging whether the substrate enters the slave axis synchronous belt position according to the opposite photoeye signal;

[0095] Step SK2, collect the current master-slave axis data, including position, speed, acceleration and other information. Interpolate each cycle in units of PLC scan cycles. The scan cycle is 2-20us, etc. The shorter the scan cycle, the higher the reproduction accuracy. PLC monitors the position, speed, and acceleration of each cycle. Select one or more monitoring options.

[0096] Step SK3, calling the parameters in step SK2.

[0097] Step SK4, judging the legitimacy of the parameters. If the data cannot be read, the motor parameters are abnormal, the motor is reversing, etc., synchronization cannot be performed;

[0098] Step SK5, determine whether the motors are synchronized; if the master and slave shafts have the same speed, it means that the synchronization has been completed and jump to step SK11 to set the synchronization parameter to 1, that is, the master and slave shafts move at the same speed, and determine whether the substrate leaves the slave shaft synchronous belt position.

[0099] Step SK6, determine whether there is a planning result, if there is no planning result, start step SK7. If there is a planning result, start step SK8.

[0100] Step SK8, determine whether the current input parameters meet the previous planning results; set the thresholds Kmin and Kmax. Taking V(t) as an example, when V(t) is greater than Kmax, or less than Kmin, it indicates that the motor has a response error, which may lead to the final tracking error. If this step is true, the return condition is used as the input parameter, and the step SK7 is returned to re-plan the path at this state. The calculation cycle must be less than one PLC scan cycle, otherwise it cannot be executed. The monitoring parameters include the main axis and slave axis parameters.

[0101] Step SK7, quintic polynomial programming, then proceed to step SK9;

[0102] Specifically, before planning, input initialization parameters and constraints.

[0103] Initialization parameters are: Initial position: L(0) = p o , final position: L(T) = p d , initial velocity: Final velocity: Initial acceleration: Final acceleration:

[0104] The limiting conditions are: velocity limit value v lim , acceleration limit value a lim , jerk limit value j lim .

[0105] Generate the trajectory equation L;

[0106] Specifically, use the fifth-degree polynomial equation as the basic equation:

[0107] L(t) = a0 + a1t + a2t 2 + a3t 3 + a4t 4 + a5t 5

[0108] Set the initial conditions and substitute the initial conditions into L(t);

[0109] The initial conditions are:

[0110] Establish the matrix: L = TA, then A = T -1 L;

[0111]

[0112] Then

[0113] Obtain according to the basic equation:

[0114]

[0115] It can be obtained that:

[0116] Velocity equation:

[0117] After substitution, we get

[0118] Velocity equation:

[0119] After substitution, we get

[0120] Acceleration equation:

[0121] After normalizing the velocity equation, the acceleration equation, and the jerk equation, set the limiting conditions;

[0122] Steps for normalization:

[0123] P(n)=a0 + a1n + a2n 2 + a3n 3 + a4n 4 + a5n 5

[0124]

[0125]

[0126]

[0127] P(0)=L(0)=0

[0128]

[0129]

[0130]

[0131]

[0132]

[0133] Using the above conversion formula, convert the six initial conditions into normalized initial condition values, substitute them into the equation P(n), and solve. Write the above formula in matrix form, NA = P, where N is the normalization parameter matrix, A is the matrix of unknowns to be solved, and P is the six initial values, then A = N -1 P.

[0134]

[0135] Then

[0136]

[0137] P(n)=6n 3 - 8n 4 + 3n 5

[0138]

[0139]

[0140]

[0141] Calculate the maximum values of the three equations;

[0142] Step SK9, according to the trajectory equation L and the conveying speed V of the main shaft substrate conveyor belt 7 mThe expected synchronization completion time T and the shortest film chasing time T are determined by the chasing distance D of the slave axis passive substrate conveyor belt 10. m ;

[0143] Determine whether T>T m If the condition is satisfied, then the process goes to step SK10; otherwise, the interpolation cannot be performed and the synchronization is stopped. The process may return to step SK1 after re-modifying the restriction condition;

[0144] As a further embodiment of the present invention: m The calculation methods include:

[0145]

[0146] Among them, P m It is the travel distance of the substrate carried by the spindle substrate conveyor belt during the film chasing process.

[0147] Specifically include:

[0148]

[0149]

[0150]

[0151] According to the conditions in the embodiment, T m =6s;

[0152] in, They are the normalized velocity equation, acceleration equation and jitter equation respectively.

[0153] Step SK10, based on the planning result of step SK7, interpolation calculation is performed on the next cycle and synchronization is performed.

[0154] like Figure 6 As shown in FIG. 1 , it is a curve diagram of the fifth-order polynomial speed planning algorithm in this embodiment using mathematical simulation software. It can be seen that the speed curve is a slowly increasing and slowly decreasing curve, and there is no sudden change in speed. It can be deduced from the mathematical formula that the speed curve is continuously derivable, so the speed is a smooth curve. The acceleration curve is also smooth. At the same time, the speed, acceleration, and jitter values ​​are all within the limit.

[0155] like Figure 7 As shown, the position planning is first performed for the fifth-order polynomial speed planning algorithm in this embodiment, and the three key position points are recorded. They are the highest point, the initial point, and the final point. Then the electronic cam table provided by the Beckhoff software is used to plot the position points. After the plotting, the calculation is performed to calculate the speed, acceleration and jitter values. From top to bottom, they are the position, speed, acceleration, and jitter curves of the slave axis.

[0156] The above has described in detail one embodiment of the present invention. However, the above content is only a preferred embodiment of the present invention and cannot be considered as defining the scope of implementation of the present invention. All equivalent changes and improvements made within the scope of the application of the present invention shall still fall within the scope covered by the patent of the present invention.

Claims

1. A substrate chasing and conveying system for magnetron sputtering, characterized in that, Comprising: A transition transfer mechanism, including a transition substrate conveyor belt (5) and a first detection point (01) and a second detection point (02) respectively arranged at both ends of the transition substrate conveyor belt (5); A slave-axis transition transfer mechanism, including a slave-axis substrate conveyor belt (6) and a third detection point (03) and a fourth detection point (04) respectively arranged at both ends of the slave-axis substrate conveyor belt (6); A slave-region (3) mechanism, including an unpowered slave-axis passive substrate conveyor belt (10) and a fifth detection point (05) and a sixth detection point (06) respectively arranged at both ends of the slave-axis passive substrate conveyor belt (10); A main-axis transfer mechanism, including a main-axis substrate conveyor belt (7) and a seventh detection point (07) arranged at the starting end of the main-axis substrate conveyor belt (7), and the main-axis substrate conveyor belt (7) transports substrates at a constant speed; A control module, connected to the transition transfer mechanism, the slave-axis transition transfer mechanism, the slave-region (3) mechanism and the main-axis transfer mechanism, for acquiring substrate position information, controlling the conveying speed of each mechanism for transporting substrates, and determining an alternative synchronization relationship between the slave-region (3) mechanism and the slave-axis transition transfer mechanism and the main-axis transfer mechanism.

2. The substrate chasing and conveying system for magnetron sputtering according to claim 1, wherein A flap valve (9) is arranged between the transition substrate conveyor belt (5) and the slave-axis substrate conveyor belt (6); When the substrate carried by the slave-axis passive substrate conveyor belt (10) leaves the sixth detection point (06), the control module drives the slave-axis substrate conveyor belt (6) to perform a substrate chasing process on the carried substrate; When the substrate carried by the slave-axis substrate conveyor belt (6) leaves the fourth detection point (04), the control module drives the flap valve (9) to open and drives the transition substrate conveyor belt (5) to perform the substrate chasing process on the carried substrate.

3. A substrate chasing and conveying control method for magnetron sputtering, which is applied to a substrate chasing and conveying system for magnetron sputtering as described in any one of claims 1-2, characterized in that, Including a substrate chasing process; The substrate chasing process includes: Generating a trajectory equation L according to initialization parameters and limiting conditions; According to the trajectory equation L, the conveying speed V of the main-axis substrate conveyor belt (7) m and the chasing distance D of the slave-axis passive substrate conveyor belt (10), determine the expected synchronization completion time T and the shortest chasing time T m ; Determine whether T>T is satisfied m , if satisfied, synchronization is possible, otherwise synchronization is not possible.

4. The substrate chasing and conveying system for magnetron sputtering according to claim 3, characterized in that, The method for generating the trajectory equation L according to initialization parameters and limiting conditions includes: Taking a fifth-degree polynomial equation as the basic equation: L(t) = a0 + a1t + a2t 2 + a3t 3 + a4t 4 + a5t 5 Setting initial conditions: Initial position: L(0) = p o Final position: L(T) = p d Initial velocity: Final velocity: Initial acceleration: Final acceleration: Obtaining according to the basic equation: Velocity equation: Acceleration equation: Jitter equation: Performing normalization processing on the velocity equation, the acceleration equation and the jitter equation, and setting limiting conditions; The normalization processing: P(n) = a0 + a1n + a2n 2 + a3n 3 + a4n 4 + a5n 5 The said limiting conditions are respectively the speed limit value v lim , the acceleration limit value a lim , and the jitter limit value j lim .

5. The substrate chasing and conveying system for magnetron sputtering according to claim 4, characterized in that, The method for determining the desired synchronization completion time T and the shortest chase time T m comprises: wherein, are the normalized velocity equation, acceleration equation, and jitter equation, respectively.

6. The substrate chasing and conveying system for magnetron sputtering according to claim 3, wherein, T m The calculation method includes: Among them, P m is the traveling distance of the substrate driven by the main shaft substrate conveyor belt (7) during the substrate chasing process.

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