Film layer structure with enhanced penetration spectrum selectivity and preparation process of film layer structure
By introducing a reinforced film layer into the greenhouse membrane structure, the problem of high energy consumption of fill light equipment in existing greenhouses is solved, and efficient spectral regulation of different crops and growth stages is achieved, crop yield and quality are improved, and the greenhouse lighting environment is optimized.
Patent Information
- Application Number
- CN202510407219.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-02
- Publication Date
- 2025-07-01
AI Technical Summary
The energy consumption of fill light equipment in existing greenhouses is high, and the spectral requirements for different crops and growth stages are different, which makes it difficult to select fill light equipment and is difficult to efficiently improve crop yield and quality.
Introducing film layers, including CrO film layers or ZnSnO film layers, are introduced into traditional film layer structures, and are prepared by reactive sputtering methods to enhance the transmittance of specific spectra and optimize the film layer structure to adapt to the spectral needs of different crops and growth stages.
It reduces the application of fill-up equipment, reduces energy consumption, and improves crop yield and quality, optimizes the light environment in the greenhouse, and adapts to the spectral needs of different crops and growth stages.
Smart Images
Figure CN120230990A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of greenhouse technology, and particularly relates to a film layer structure with enhanced spectral selectivity for penetration and a preparation process thereof. Background Art
[0002] Red light (wavelength range of 640 - 660 nm) and blue light (wavelength range of 430 - 450 nm) are important spectra required for plant growth. Red light can promote flower bud differentiation and flowering, and contribute to the accumulation of dry matter in plants. Blue light promotes leaf growth and increases plant height, thus improving the overall growth condition of crops. By supplementing red light and blue light, the yield and quality of crops can be improved.
[0003] Different crops and different growth stages have different light requirements. For example, fruiting plants will produce more fruits when receiving red light in the spectrum; green leafy plants prefer blue light in the spectrum.
[0004] Currently, when growing crops in greenhouses or other greenhouse environments, generally according to the crop type and different growth stages, supplementary lighting equipment is added to formulate personalized supplementary lighting. Commonly used supplementary lighting equipment includes sodium lamps and LED lamps. Sodium lamps have a lower price but average effects and are suitable for scenarios with low requirements for supplementary lighting; while LED lamps, although more expensive, have better supplementary lighting effects and low heat generation, and are suitable for greenhouse environments that require efficient supplementary lighting but consume a large amount of energy, increasing operating costs. Summary of the Invention
[0005] In view of the deficiencies of the prior art, the present invention designs a film layer structure with enhanced spectral selectivity for penetration. The film layer structure is disposed on a substrate and includes a SiN film layer, a NiCr film layer, an enhanced film layer, an Ag film layer, a NiCr film layer, and a SiN film layer sequentially arranged from the inside to the outside.
[0006] Preferably, the enhanced film layer is a CrO film layer and / or a ZnSnO film layer.
[0007] Based on the same inventive concept, the present invention also provides a preparation process for a film layer structure with enhanced spectral selectivity for penetration, including:
[0008] Preparing the SiN film layer by a reactive sputtering method, wherein the target is a silicon target, the flow rate of Ar is 100 sccm, the flow rate of N2 is 50 sccm, and the thickness is 20 - 100 nm;
[0009] Preparing the NiCr film layer by a reactive sputtering method, wherein the target is 80% Ni and 20% Cr, the flow rate of Ar is 100 sccm, and the thickness is 10 - 50 nm;
[0010] Preparing the enhanced film layer;
[0011] Preparation of Ag film layer;
[0012] Preparation of NiCr film layer;
[0013] Preparation of SiN film layer.
[0014] Preferably, the preparation of the enhanced film layer includes:
[0015] Prepare the CrO film layer by reactive sputtering method, where the target is a chromium target, the flow rate of Ar is 100 sccm, the flow rate of O2 is 50 sccm, and the thickness is 20 - 80 nm;
[0016] And / or;
[0017] Prepare the ZnSnO film layer by reactive sputtering method, where the target is 50% ZnO and 50% SnO2, the flow rate of Ar is 200 sccm, the flow rate of O2 is 50 sccm, and the thickness is 50 - 200 nm.
[0018] Compared with the closest prior art, the beneficial effects of the present invention are as follows:
[0019] By setting an enhanced film layer between the base film layers, the present invention can selectively enhance different penetration spectra without affecting the heat insulation performance of the base film layers, reduce the application of supplementary lighting equipment for different varieties of crops and at different growth stages, reduce energy consumption, not only improve the yield and quality of crops, but also optimize the lighting environment in the greenhouse and create more suitable conditions for the growth of crops. Description of the Drawings
[0020] Figure 1 It is a schematic diagram of the film layer structure with enhanced penetration spectrum selectivity of the present invention.
[0021] Figure 2 It is a schematic diagram of an embodiment of the film layer structure with enhanced penetration spectrum selectivity of the present invention.
[0022] Figure 3 It is a comparison diagram of the spectral enhancement effect of an embodiment of the film layer structure with enhanced penetration spectrum selectivity of the present invention.
[0023] Reference Signs:
[0024] 1 - Substrate, 2 - Film layer structure, 21 - SiN film layer, 22 - NiCr film layer, 23 - Enhanced film layer, 231 - CrO film layer, 232 - ZnSnO film layer, 24 - Ag film layer, 25 - NiCr film layer, 26 - SiN film layer. Detailed Embodiments
[0025] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention.
[0026] As Figure 1 shown, the present invention provides a film layer structure with enhanced spectral selectivity for penetration. The film layer structure 2 is disposed on the substrate 1 and includes a SiN film layer 21, a NiCr film layer 22, an enhancement film layer 23, an Ag film layer 24, a NiCr film layer 25, and a SiN film layer 26 arranged in sequence from inside to outside. Among them, the SiN film layer 21, the NiCr film layer 22, the Ag film layer 24, the NiCr film layer 25, and the SiN film layer 26 are traditional basic film layers. By arranging the enhancement film layer 23 between the basic film layers, while not affecting the heat insulation performance of the basic film layers, the spectral selectivity for different penetrations can be enhanced, the application of supplementary lighting equipment can be reduced for different varieties of crops and different growth stages, and energy consumption can be reduced. This can not only improve the yield and quality of crops, but also optimize the lighting environment in the greenhouse and create more suitable conditions for the growth of crops.
[0027] Preferably, the enhancement film layer 23 is a CrO film layer 231 and / or a ZnSnO film layer 232. The enhancement film layer can select the CrO film layer 231 or the ZnSnO film layer 232 to enhance the penetration of the red spectrum or the blue spectrum. Such a setting is more targeted and can perform targeted spectral enhancement for different varieties of crops and different growth stages. The CrO film layer 231 and the ZnSnO film layer 232 can also be set simultaneously to enhance the penetration of the red spectrum and the blue spectrum. As Figure 2 shown, such a setting can be applicable to different varieties of crops and different growth stages. The effect is not as good as the targeted enhancement, but the applicability is enhanced, and it is more suitable for greenhouse greenhouses. As Figure 3 shown, through the improvement of the film layer structure, the transmittance in the visible light region is effectively improved, especially in the 430 - 450 nm blue light region and the 640 - 660 nm red light region. This can not only improve the yield and quality of crops, but also optimize the lighting environment in the greenhouse and create more suitable conditions for the growth of crops.
[0028] Based on the same inventive concept, the present invention also provides a preparation process for a film layer structure with enhanced spectral selectivity for penetration, including:
[0029] The SiN film layer is prepared by a reactive sputtering method. Among them, the target is a silicon target, the flow rate of Ar is 100 sccm, the flow rate of N2 is 50 sccm, and the thickness is 20 - 100 nm;
[0030] The NiCr film layer is prepared by a reactive sputtering method. Among them, the target is 80% Ni and 20% Cr, the flow rate of Ar is 100 sccm, and the thickness is 10 - 50 nm;
[0031] Enhanced film layer preparation;
[0032] Ag film layer preparation;
[0033] The NiCr film layer is prepared by reactive sputtering. Among them, the target is 80% Ni and 20% Cr, the flow rate of Ar is 100 sccm, and the thickness is 10 - 50 nm;
[0034] The SiN film layer is prepared by reactive sputtering. Among them, the target is a silicon target, the flow rate of Ar is 100 sccm, the flow rate of N2 is 50 sccm, and the thickness is 20 - 100 nm.
[0035] Preferably, the enhanced film layer preparation includes:
[0036] The CrO film layer is prepared by reactive sputtering. Among them, the target is a chromium target, the flow rate of Ar is 100 sccm, the flow rate of O2 is 50 sccm, and the thickness is 20 - 80 nm;
[0037] and / or;
[0038] The ZnSnO film layer is prepared by reactive sputtering. Among them, the target is 50% ZnO and 50% SnO2, the flow rate of Ar is 200 sccm, the flow rate of O2 is 50 sccm, and the thickness is 50 - 200 nm.
[0039] In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation of the present application.
[0040] In addition, the terms "upper" and "lower" are only used for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "upper" and "lower" may explicitly or implicitly include at least one of such features. In the description of the present application, "a plurality" means at least two, such as two, three, etc., unless otherwise specifically defined.
[0041] In this application, unless otherwise clearly specified or limited, the terms "installed", "connected", "coupled", "fixed", etc. shall be construed in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection, an electrical connection, or capable of communicating with each other; it may be directly connected, or indirectly connected through an intermediate medium, and it may be the internal connection of two components or the interaction relationship between two components, unless otherwise clearly limited. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.
[0042] In this application, the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples", etc. mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of this application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.
[0043] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention can have various changes and modifications. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention are included in the scope of the claims of the present invention pending approval.
Claims
1. A film structure with selectively enhanced transmittance spectrum, characterized in that: The film layer structure is arranged on a substrate, and comprises a SiN film layer, a NiCr film layer, a reinforcement film layer, an Ag film layer, a NiCr film layer and a SiN film layer which are arranged in sequence from the inside to the outside.
2. The film structure with selectively enhanced transmittance spectrum according to claim 1, characterized in that: The enhanced film layer is a CrO film layer and / or a ZnSnO film layer.
3. A process for preparing a film structure with selectively enhanced transmittance spectrum as claimed in any one of claims 1 to 2, characterized in that: include: The SiN film layer is prepared by a reactive sputtering method, wherein the target material is a silicon target, the flow rate of Ar is 100 sccm, the flow rate of N2 is 50 sccm, and the thickness is 20-100 nm; The NiCr film layer was prepared by reactive sputtering, wherein the target material was 80% Ni and 20% Cr, the Ar flow rate was 100 sccm, and the thickness was 10-50 nm; Enhanced film preparation; Preparation of Ag film; Preparation of NiCr film; Preparation of SiN film.
4. The preparation process according to claim 3, characterized in that: The preparation of the enhanced film layer comprises: The CrO film layer was prepared by a reactive sputtering method, wherein the target material was a chromium target, the flow rate of Ar was 100 sccm, the flow rate of O2 was 50 sccm, and the thickness was 20-80 nm; and / or; The ZnSnO film layer was prepared by a reactive sputtering method, wherein the target material was 50% ZnO and 50% SnO2, the flow rate of Ar was 200sccm, the flow rate of O2 was 50sccm, and the thickness was 50-200nm.