Deep ultraviolet near-field photoetching device and method

Abstract

The invention provides a deep ultraviolet near-field photoetching device and method, and relates to the technical field of photoetching, and the deep ultraviolet near-field photoetching device comprises a solid laser used for generating initial laser with stable energy; the laser frequency divider is used for carrying out frequency division on the initial laser and generating first frequency mixing light containing a plurality of wavelengths; the nanosecond optical parametric oscillator comprises at least two nonlinear optical crystals, and the nanosecond optical parametric oscillator generates deep ultraviolet pulse laser with a preset central wavelength by adjusting the angles and the positions of the at least two nonlinear optical crystals based on the input first frequency mixing light; the beam shaper is used for shaping the deep ultraviolet pulse laser; and the photoetching mask assembly is used for carrying out deep ultraviolet near-field photoetching on the substrate by utilizing a mask under the irradiation of the shaped deep ultraviolet pulse laser to obtain a high-resolution pattern.

Description

Technical Field

[0001] The present disclosure relates to the field of lithography technology, and particularly to a deep ultraviolet near-field lithography apparatus and method. Background Art

[0002] With the rapid development of the microelectronics industry, the demand for miniaturization and high-density integration of microelectronic devices is increasing day by day. Therefore, there is an urgent need for high-resolution and low-cost lithography equipment. As a low-cost lithography technology, near-field lithography technology achieves a lithography resolution beyond the optical diffraction limit by coupling high-spatial-frequency evanescent waves carrying the detailed information of the mask pattern. In particular, near-field lithography technology based on surface plasmon polaritons can further couple and enhance high-spatial-frequency evanescent waves, thereby obtaining finer super-resolution lithography resolution.

[0003] Similar to projection lithography technology, for near-field lithography technology, the wavelength of the exposure light source can also be reduced from ultraviolet to deep ultraviolet to enhance the lithography resolution. However, currently commonly used deep ultraviolet wavelength (248 nm, 193 nm) light sources are KrF and ArF excimer lasers, which have a complex system, high cost, and require the supply of dangerous special gases during normal operation, resulting in particularly high operation and maintenance costs, which is contrary to the simplicity and low cost that the near-field lithography system should possess. Summary of the Invention

[0004] In view of the above problems, the present disclosure provides a deep ultraviolet near-field lithography apparatus and method for at least partially solving the above technical problems.

[0005] One aspect of an embodiment of the present disclosure provides a deep ultraviolet near-field lithography apparatus, including: a solid-state laser for generating an initial laser with stable energy; a laser frequency divider for frequency-dividing the initial laser to generate a first mixed light containing multiple wavelengths; a nanosecond optical parametric oscillator including at least two nonlinear optical crystals, the nanosecond optical parametric oscillator generating deep ultraviolet pulsed laser with a predetermined central wavelength based on the input first mixed light by adjusting the angles and positions of at least two nonlinear optical crystals; a beam shaper for shaping the deep ultraviolet pulsed laser; and a lithography mask assembly for performing deep ultraviolet near-field lithography on a substrate using a mask under the irradiation of the shaped deep ultraviolet pulsed laser to obtain a high-resolution pattern.

[0006] According to an embodiment of the present disclosure, the nanosecond optical parametric oscillator separates the input first mixed light and passes it through at least two nonlinear optical crystals, generates frequency-divided light with specific power and frequency by adjusting the angles and positions of at least two nonlinear optical crystals, and couples the frequency-divided light with specific power and frequency to obtain deep ultraviolet pulsed laser with a predetermined central wavelength.

[0007] According to an embodiment of the present disclosure, a plurality of wavelengths include a first wavelength, a second wavelength, and a third wavelength; the nanosecond optical parametric oscillator includes: a first frequency divider for dividing the input first mixed light into a second mixed light containing the first wavelength and the second wavelength and a first laser of the third wavelength; a first beam splitter for splitting the first laser into two paths and outputting one path of the first laser; a first nonlinear optical crystal for receiving the other path of the first laser output by the first beam splitter and performing first laser modulation on the other path of the first laser; a second frequency divider for dividing the second mixed light into a second laser containing the first wavelength and a third laser of the second wavelength and outputting the third laser; a second beam splitter for splitting the second laser into two paths and outputting one path of the second laser; a second nonlinear optical crystal for receiving the other path of the second laser output by the second beam splitter and performing second laser modulation on the other path of the second laser; a third beam splitter for splitting the fifth laser generated by the first laser modulation into two paths and outputting one path of the fifth laser; a coupler for coupling the other path of the fifth laser and the fourth laser generated by the second laser modulation to obtain a deep ultraviolet pulsed laser with a predetermined central wavelength.

[0008] According to an embodiment of the present disclosure, the first wavelength is greater than the second wavelength, and the second wavelength is greater than the third wavelength.

[0009] According to an embodiment of the present disclosure, the output first laser, second laser, third laser, and fifth laser are used to feedback the working state of the nanosecond optical parametric oscillator.

[0010] According to an embodiment of the present disclosure, the wavelength of the solid-state laser is 1064 nm, the first wavelength is 1064 nm, the second wavelength is 532 nm, and the third wavelength is 355 nm; the first frequency divider is a long-pass dichroic mirror that reflects 355 nm, and the second frequency divider is a long-pass dichroic mirror that reflects 532 nm; the first beam splitter is a beam splitting prism for 355 nm, and the second beam splitter is a beam splitting prism for 1064 nm; the first nonlinear optical crystal is a nonlinear optical crystal for 1064 nm modulation, and the second nonlinear optical crystal is a nonlinear optical crystal for 355 nm modulation; the wavelength range of the fifth laser is 405 nm - 709 nm; the wavelength range of the deep ultraviolet pulsed laser is 190 nm - 405 nm.

[0011] According to an embodiment of the present disclosure, the beam shaper includes: an optical polarization element, a spatial filtering element, a beam expanding element, a homogenizing element, a beam converging element, and an optical path on-off element connected in sequence through a spatial optical path, which perform polarization, spatial filtering, beam expansion, homogenization, and convergence on the deep ultraviolet pulsed laser in sequence to adjust the parameters of the deep ultraviolet pulsed laser, and control the on-off of the deep ultraviolet pulsed laser through the optical path on-off element.

[0012] According to an embodiment of the present disclosure, it further includes: an active vibration isolation platform for isolating environmental vibrations; a displacement stage installed on the active vibration isolation platform; a wafer chuck for carrying a wafer, the wafer chuck is installed on the displacement stage, and under the drive of the displacement stage, the working distance between the mask and the wafer is controlled to a predetermined distance; an ultra-precision environmental control cover, within which a solid-state laser, a laser frequency divider, a nanosecond optical parametric oscillator, a beam shaper, a lithography mask assembly, a wafer, a wafer chuck, a displacement stage, and an active vibration isolation platform are all arranged, and the ultra-precision environmental control cover is used to provide a lithography environment with a cleanliness higher than a threshold value; a controller for controlling the precision environmental control cover, the solid-state laser, the laser frequency divider, the nanosecond optical parametric oscillator, the beam shaper, the displacement stage, and the active vibration isolation platform.

[0013] According to an embodiment of the present disclosure, the lithography mask assembly is installed on a support structure, and the support structure is independent of a specified position on the active vibration isolation platform and independent of the displacement stage and the wafer chuck.

[0014] Another aspect of the embodiments of the present disclosure provides a deep ultraviolet near-field lithography method, which is based on a deep ultraviolet near-field lithography device. The method includes: in response to a first instruction, turning on the solid-state laser and setting the positions and angles of at least two nonlinear optical crystals in the nanosecond optical parametric oscillator to generate deep ultraviolet pulsed laser with a predetermined central wavelength; in response to a second instruction, controlling the working distance between the mask and the wafer to a predetermined distance; in response to a third instruction, based on the exposure dose, setting the on-off time of the beam shaper, and controlling the beam shaper based on the on-off time to make the shaped deep ultraviolet pulsed laser irradiate the lithography mask assembly, and performing deep ultraviolet near-field lithography on the wafer to obtain a high-resolution pattern.

[0015] The deep ultraviolet near-field lithography device and method provided by the present disclosure have at least the following technical effects:

[0016] (1) By adjusting the angles and positions of multiple groups of nonlinear optical crystals in the nanosecond optical parametric oscillator, the energy and wavelength of the light emitted by the solid-state laser can be changed, improving the adjustability of the exposure light source, thereby generating tunable deep ultraviolet pulsed laser, and cooperating with the position adjustment of the near-field lithography module, so as to achieve efficient near-field lithography in the deep ultraviolet band.

[0017] (2) Using a solid-state laser combined with a nanosecond optical parametric oscillator to generate deep ultraviolet pulsed laser with different wavelengths, replacing complex and expensive excimer deep ultraviolet lasers, and assembling them into a near-field lithography system, achieving high resolution while reducing the complexity and cost of the near-field lithography system.

[0018] (3) By adjusting the nanosecond optical parametric oscillator, the central wavelength of the deep ultraviolet pulsed laser can be adjusted, which is beneficial to matching the exposure system to achieve the best lithography resolution. Description of the Drawings

[0019] Through the following description of the embodiments of the present disclosure with reference to the accompanying drawings, the above content and other objects, features, and advantages of the present disclosure will become clearer. In the drawings:

[0020] Figure 1 Schematically shows the structural diagram of a deep ultraviolet near-field lithography apparatus according to an embodiment of the present disclosure.

[0021] Figure 2 Schematically shows the structural diagram of a nanosecond optical parametric oscillator according to an embodiment of the present disclosure.

[0022] Figure 3 Schematically shows the structural diagram of a beam shaper according to an embodiment of the present disclosure.

[0023] Figure 4 Schematically shows the flowchart of a deep ultraviolet near-field lithography method according to an embodiment of the present disclosure. Detailed implementation manners

[0024] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are merely exemplary and are not intended to limit the scope of the present disclosure. In the following detailed description, for the sake of explanation, many specific details are set forth to provide a comprehensive understanding of the embodiments of the present disclosure. However, obviously, one or more embodiments can also be implemented without these specific details. In addition, in the following description, descriptions of well-known structures and technologies are omitted to avoid unnecessarily confusing the concepts of the present disclosure.

[0025] Figure 1 Schematically shows the structural diagram of a deep ultraviolet near-field lithography apparatus according to an embodiment of the present disclosure.

[0026] As Figure 1 shown, the deep ultraviolet near-field lithography apparatus includes: a solid-state laser 103, a laser frequency divider 104, a nanosecond optical parametric oscillator 105, a beam shaper 106, a lithography mask assembly 107, and a substrate 108 that are connected by a spatial optical path.

[0027] The solid-state laser 103 is used to generate an initial laser with stable energy.

[0028] The laser frequency divider 104 is used to frequency-divide the initial laser to generate a first mixed light containing multiple wavelengths.

[0029] The nanosecond optical parametric oscillator 105 includes at least two nonlinear optical crystals. Based on the input first mixed light, the nanosecond optical parametric oscillator generates a deep ultraviolet pulsed laser with a predetermined central wavelength by adjusting the angles and positions of at least two nonlinear optical crystals.

[0030] The beam shaper 106 is used to shape the deep ultraviolet pulsed laser.

[0031] A lithography mask assembly 107 is used to perform deep ultraviolet near-field lithography on a substrate 108 using a mask under the irradiation of a shaped deep ultraviolet pulsed laser to obtain a high-resolution pattern. The lithography mask assembly 107 includes a mask and a structure for fixing the mask, such as a mask base.

[0032] In some embodiments, the deep ultraviolet near-field lithography apparatus further includes: an ultra-precision environmental control enclosure 101, a controller 102, a wafer stage 109, a displacement stage 110, and an active vibration isolation platform 111.

[0033] The active vibration isolation platform 111 is used to isolate environmental vibrations. The active vibration isolation platform 111 is installed on a shock-absorbing foundation.

[0034] The displacement stage 110 is installed on the active vibration isolation platform 111.

[0035] The wafer stage 109 is used to hold the substrate 108. The wafer stage 109 is installed on the displacement stage 110 and drives the substrate 108 to move under the drive of the displacement stage 110, controlling the working distance between the mask and the substrate 108 to be less than or equal to 100 nm.

[0036] The ultra-precision environmental control enclosure 101 houses a solid-state laser 103, a laser frequency divider 104, a nanosecond optical parametric oscillator 105, a beam shaper 106, a lithography mask assembly 107, a substrate 108, a wafer stage 109, a displacement stage 110, and an active vibration isolation platform 111. The ultra-precision environmental control enclosure 101 is used to provide a lithography environment with a cleanliness higher than a threshold value.

[0037] The controller 102 is used to control the ultra-precision environmental control enclosure 101, the solid-state laser 103, the laser frequency divider 104, the nanosecond optical parametric oscillator 105, the beam shaper 106, the displacement stage 110, and the active vibration isolation platform 108.

[0038] In some embodiments, the cleanliness of the ultra-precision environmental control enclosure 101 can reach above class 1000, and the active vibration isolation platform can reach the VC-F standard.

[0039] In some embodiments, the lithography mask assembly 107 is installed on a support structure that is independent of a specified position on the active vibration isolation platform 111 and is independent of the displacement stage and the wafer stage, ensuring the stable position of the lithography mask assembly 107 during the lithography process. The substrate 108 is fixed to a mechanically designed structure of the wafer stage 109, ensuring the stable position of the substrate 108 during the lithography process.

[0040] The controller 111 transports the substrate 108 to a specified position by controlling the high-precision displacement stage 110, and can complete operations such as wafer loading, eliminating the gap between the lithography mask assembly 107 and the substrate 108, step-by-step exposure, wafer separation, and wafer unloading.

[0041] The controller 111 can set parameters to adjust the solid-state laser 103, laser frequency divider 104, nanosecond optical parametric oscillator 105, and beam shaper 106, so as to adjust parameters such as the spot size, uniformity, and exposure dose of the deep ultraviolet pulsed laser.

[0042] In some embodiments, the nanosecond optical parametric oscillator separates the input first mixed-frequency light and passes it through at least two nonlinear optical crystals. By adjusting the angles and positions of the at least two nonlinear optical crystals, frequency-divided light with specific power and frequency is generated, and the frequency-divided light with specific power and frequency is coupled to obtain deep ultraviolet pulsed laser with a predetermined central wavelength.

[0043] The solid-state laser 103 generates initial laser with stable energy. After the initial laser enters the laser frequency divider 104 through the spatial optical path, mixed-frequency light with the original frequency and different frequencies is generated. The laser frequency divider 104 is composed of a second-harmonic and third-harmonic frequency divider combination. The laser passes through the laser frequency divider 104 to generate mixed-frequency light including the first wavelength λ1, the second wavelength λ2, and the third wavelength λ3. The mixed-frequency light enters the nanosecond optical parametric oscillator 105 through the spatial optical path. The mixed-frequency light is first separated by beam splitting elements in different frequency bands, and then passes through nonlinear optical crystals respectively. The position and angle of the nonlinear optical crystals are controlled according to the parameters input by the controller 102 to generate frequency-divided light with specific power and frequency. The frequency-divided light is coupled according to the parameters input by the controller 102 and then deep ultraviolet band laser is output.

[0044] Figure 2 Schematically shows a structural diagram of a nanosecond optical parametric oscillator according to an embodiment of the present disclosure.

[0045] As Figure 2 shown, the nanosecond optical parametric oscillator 105 may include:

[0046] A first frequency divider 209, configured to divide the input first mixed-frequency light 215 into a second mixed-frequency light 216 including the first wavelength λ1 and the second wavelength λ2 and a first laser 217 with the third wavelength λ3.

[0047] A first beam splitter 210, configured to split the first laser 217 into two paths, and output one path of the first laser 217 as the output laser 203.

[0048] A first nonlinear optical crystal 208, configured to receive the other path of the first laser output by the first beam splitter 210 and perform first laser modulation on the other path of the first laser.

[0049] A second frequency divider 214, configured to divide the second mixed-frequency light 216 into a second laser including the first wavelength λ1 and a third laser with the second wavelength λ2, and output the third laser as the output laser 205.

[0050] The second beam splitter 213 is configured to split the second laser beam with the first wavelength λ1 into two paths, and output one of the second laser beams as the output laser beam 204.

[0051] The second nonlinear optical crystal 207 is configured to receive the other second laser beam output from the second beam splitter 213, and perform second laser modulation on the other second laser beam.

[0052] The third beam splitter 212 is configured to split the fifth laser beam generated by the first laser modulation into two paths, and output one of the fifth laser beams as the output laser beam 201.

[0053] The coupler 206 is configured to couple the other fifth laser beam and the fourth laser beam 218 generated by the second laser modulation to obtain a deep ultraviolet pulsed laser beam 202 with a predetermined central wavelength.

[0054] A mirror 211 may be disposed between the third beam splitter 212 and the second nonlinear optical crystal 208, and is configured to reflect the fifth laser beam generated by the first laser modulation of the other first laser beam by the first nonlinear optical crystal 208 to the third beam splitter 212.

[0055] The controller 102 can adjust the energy and wavelength of the laser beam by changing parameters such as the positions and angles of the second nonlinear optical crystal 207 and the first nonlinear optical crystal 208, and respectively output the fourth laser beam 218 with the fourth wavelength λ4 and the fifth laser beam with the fifth wavelength λ5.

[0056] In some embodiments, the first wavelength λ1 is greater than the second wavelength λ2, and the second wavelength is greater than the third wavelength λ3.

[0057] In some embodiments, the output laser beam 201, the output laser beam 203, the output laser beam 204, and the output laser beam 205 are used to feedback the working state of the nanosecond optical parametric oscillator.

[0058] As an optional method, the wavelength of the solid-state laser may be 1064 nm, the first wavelength of the mixed-frequency light 215 may be 1064 nm, the second wavelength may be 532 nm, and the third wavelength may be 355 nm.

[0059] The first frequency divider 209 may be a long-pass dichroic mirror that reflects 355 nm, and the second frequency divider 214 may be a long-pass dichroic mirror that reflects 532 nm.

[0060] The first beam splitter 210 may be a beam splitting prism for 355 nm, and the second beam splitter 213 may be a beam splitting prism for 1064 nm.

[0061] The first nonlinear optical crystal 208 can be a nonlinear optical crystal for 1064 nm modulation, and the second nonlinear optical crystal 207 can be a nonlinear optical crystal for 355 nm modulation.

[0062] The wavelength range of the fifth laser λ5 can be 405 nm to 709 nm; the wavelength range of the deep ultraviolet pulsed laser λ6 can be 190 nm to 405 nm. The positions and angles of the second nonlinear optical crystal 207 and the first nonlinear optical crystal 208 can be adjusted according to the requirements of the micro-nano lithography process to output the 193 nm and 248 nm lasers commonly used in the current deep ultraviolet lithography process.

[0063] Figure 3 The structural diagram of the beam shaper according to an embodiment of the present disclosure is schematically shown.

[0064] As Figure 3 shown, the beam shaper 105 may include:

[0065] An optical polarization element 301, a spatial filtering element 302, a beam expanding element 303, a beam homogenizing element 304, a beam converging element 305, and an optical path on-off element 306 that are sequentially connected through a spatial optical path. The deep ultraviolet pulsed laser is polarized, spatially filtered, beam-expanded, homogenized, and converged in sequence to adjust the parameters of the deep ultraviolet pulsed laser, and the on-off of the deep ultraviolet pulsed laser is controlled through the optical path on-off element 306 to control the exposure dose.

[0066] The optical polarization element 301 (such as a polarizer or a polarization beam splitter) is used to selectively pass ultraviolet laser with a specific polarization direction, thereby controlling the polarization state of the light beam. This helps to reduce unnecessary polarization components and improve the quality and stability of the light beam.

[0067] The spatial filtering element 302 (such as a spatial filter) is based on the principle of Fourier optics and uses a combination of a lens and a pinhole (or small hole) to selectively filter the spatial frequency components of the laser beam. It can block high-frequency noise components (such as diffraction rings, stray light, etc.) and only allow low-frequency components (i.e., the main light beam) to pass through, thereby significantly improving the quality and coherence of the light beam.

[0068] The beam expanding element 303 (such as a beam expander group) is used to expand the diameter of the laser beam and reduce its divergence angle. By beam expanding, the laser beam can be made more collimated, providing better conditions for subsequent optical processing.

[0069] The beam homogenizing element 304 (such as a diffractive optical element DOE or a microlens array MLA) converts the original Gaussian distribution into a flat-top distribution by changing the phase or amplitude distribution of the laser beam, realizing beam homogenization. The homogenized beam has a more uniform energy density distribution, which helps to improve the accuracy and stability of laser processing or measurement.

[0070] The light beam focusing element 305 (such as a field lens or a focusing lens) is used to focus the collimated laser beam at a point or a small area, improving the energy density of the laser beam. This helps to achieve a finer marking effect in laser processing.

[0071] The optical path on-off element 306 (such as a shutter or a light gate) is used to control the on-off of the optical path, thereby realizing the on-off control of the laser beam. This is very useful when precise control of the laser output time is required or when protecting the optical system from unnecessary laser irradiation.

[0072] An embodiment of the present disclosure also provides a deep ultraviolet near-field lithography method, and the deep ultraviolet near-field light is realized based on the above deep ultraviolet near-field lithography device.

[0073] Figure 4 The flowchart of the deep ultraviolet near-field lithography method according to an embodiment of the present disclosure is schematically shown.

[0074] As Figure 4 shown, the deep ultraviolet near-field lithography method of this embodiment may include operation S410 to operation S430.

[0075] In operation S110, in response to the first instruction, the solid-state laser is turned on, and the positions and angles of at least two nonlinear optical crystals in the nanosecond optical parametric oscillator are set to generate a deep ultraviolet pulsed laser with a predetermined central wavelength.

[0076] In operation S420, in response to the second instruction, the working distance between the mask and the substrate is controlled to a predetermined distance.

[0077] In operation S430, in response to the third instruction, based on the exposure dose, the on-off time of the beam shaper is set, and based on the on-off time, the beam shaper is controlled to make the shaped deep ultraviolet pulsed laser irradiate the lithography mask assembly, and the substrate is subjected to deep ultraviolet near-field lithography using the mask to obtain a high-resolution pattern.

[0078] In some embodiments, the predetermined distance may be less than or equal to 100 nm.

[0079] Furthermore, the deep ultraviolet near-field lithography method may further include determining whether step-by-step lithography is required. If not, the lithography is ended; if so, operations S420 to S430 are repeatedly executed.

[0080] It should be noted that for the details not described in the embodiment part of the deep ultraviolet near-field lithography method, please refer to the deep ultraviolet near-field lithography device part, and details will not be repeated here.

[0081] According to the deep ultraviolet near-field lithography apparatus and method provided by the embodiments of the present disclosure, a solid-state laser is combined with a nanosecond optical parametric oscillator to generate deep ultraviolet pulsed laser, so as to be used as the deep ultraviolet near-field lithography exposure light source. While achieving super-resolution near-field lithography, the plant conditions for the normal operation of the deep ultraviolet exposure light source are reduced and its operating cost is also reduced. Moreover, the central wavelength of the deep ultraviolet pulsed laser can be adjusted by adjusting the position and angle parameters of the nonlinear optical crystal group in the nanosecond optical parametric oscillator, which is beneficial to matching the exposure system to achieve the best lithography resolution.

[0082] Compared with other deep ultraviolet lithography technologies, some deep ultraviolet wavelength (248 nm, 193 nm) light sources are KrF and ArF excimer lasers. The system is complex, the cost is high, and special dangerous gases need to be supplied during normal operation, resulting in extremely high operation and maintenance costs, which is contrary to the simplicity and low cost that the near-field lithography system should possess. A solid-state laser combined with a nanosecond optical parametric oscillator is used to generate deep ultraviolet pulsed lasers with different wavelengths (including 248 nm, 193 nm), replacing the complex and expensive excimer deep ultraviolet lasers, and assembling them into the near-field lithography system to achieve high resolution while reducing the complexity and cost of the near-field lithography system.

[0083] The embodiments of the present disclosure have been described above. However, these embodiments are only for illustrative purposes and not for limiting the scope of the present disclosure. Although the embodiments have been described separately above, this does not mean that the measures in each embodiment cannot be used advantageously in combination. The scope of the present disclosure is defined by the appended claims and their equivalents. Without departing from the scope of the present disclosure, those skilled in the art can make various substitutions and modifications, and these substitutions and modifications should all fall within the scope of the present disclosure.

Claims

1. A deep ultraviolet near-field lithography device, characterized in that Comprising: A solid-state laser for generating an initial laser with stable energy; A laser frequency divider for frequency-dividing the initial laser to generate a first mixed light containing multiple wavelengths; A nanosecond optical parametric oscillator including at least two nonlinear optical crystals. The nanosecond optical parametric oscillator generates a deep ultraviolet pulsed laser with a predetermined central wavelength based on the input first mixed light by adjusting the angles and positions of the at least two nonlinear optical crystals; A beam shaper for shaping the deep ultraviolet pulsed laser; A lithography mask assembly for performing deep ultraviolet near-field lithography on a substrate using a mask under the irradiation of the shaped deep ultraviolet pulsed laser to obtain a high-resolution pattern.

2. The device according to claim 1, characterized in that, The nanosecond optical parametric oscillator separates the input first mixed light and passes it through at least two nonlinear optical crystals. By adjusting the angles and positions of the at least two nonlinear optical crystals, it generates frequency-divided light with a specific power and frequency, and couples the frequency-divided light with the specific power and frequency to obtain the deep ultraviolet pulsed laser with the predetermined central wavelength.

3. The device according to claim 2, wherein The multiple wavelengths include a first wavelength, a second wavelength, and a third wavelength; the nanosecond optical parametric oscillator includes: A first frequency divider for frequency-dividing the input first mixed light into a second mixed light containing the first wavelength and the second wavelength and a first laser with the third wavelength; A first beam splitter for splitting the first laser into two paths and outputting one path of the first laser; A first nonlinear optical crystal for receiving the other path of the first laser output by the first beam splitter and performing first laser modulation on the other path of the first laser; A second frequency divider for frequency-dividing the second mixed light into a second laser containing the first wavelength and a third laser with the second wavelength, and outputting the third laser; A second beam splitter for splitting the second laser into two paths and outputting one path of the second laser; A second nonlinear optical crystal for receiving the other path of the second laser output by the second beam splitter and performing second laser modulation on the other path of the second laser; A third beam splitter for splitting the fifth laser generated by the first laser modulation into two paths and outputting one path of the fifth laser; A coupler for coupling the other path of the fifth laser and the fourth laser generated by the second laser modulation to obtain the deep ultraviolet pulsed laser with the predetermined central wavelength.

4. The device according to claim 3, characterized in that, The first wavelength is greater than the second wavelength, and the second wavelength is greater than the third wavelength.

5. The device according to claim 4, characterized in that, The output first laser, second laser, third laser, and fifth laser are used to feedback the working state of the nanosecond optical parametric oscillator.

6. The device according to claim 5, characterized in that The wavelength of the solid-state laser is 1064 nm, the first wavelength is 1064 nm, the second wavelength is 532 nm, and the third wavelength is 355 nm; The first frequency divider is a long-pass dichroic mirror that reflects 355 nm, and the second frequency divider is a long-pass dichroic mirror that reflects 532 nm; The first beam splitter is a beam splitting prism for 355 nm, and the second beam splitter is a beam splitting prism for 1064 nm; The first nonlinear optical crystal is a nonlinear optical crystal for 1064 nm modulation, and the second nonlinear optical crystal is a nonlinear optical crystal for 355 nm modulation; The wavelength range of the fifth laser is 405 nm to 709 nm; the wavelength range of the deep ultraviolet pulsed laser is 190 nm to 405 nm.

7. The device according to claim 1, wherein The beam shaper includes: An optical polarization element, a spatial filtering element, a beam expanding element, a beam homogenizing element, a beam focusing element, and an optical path on-off element that are sequentially connected through a spatial optical path. The deep ultraviolet pulsed laser is polarized, spatially filtered, beam-expanded, beam-homogenized, and focused in sequence to adjust the parameters of the deep ultraviolet pulsed laser, and the on-off of the deep ultraviolet pulsed laser is controlled by the optical path on-off element.

8. The device according to any one of claims 1 to 7, characterized in that It further includes: An active vibration isolation platform for isolating environmental vibrations; A displacement stage installed on the active vibration isolation platform; A wafer stage for carrying a substrate. The wafer stage is installed on the displacement stage, and under the drive of the displacement stage, the working distance between the mask and the substrate is controlled to a predetermined distance; An ultra-precision environmental control enclosure. The solid-state laser, the laser frequency divider, the nanosecond optical parametric oscillator, the beam shaper, the lithography mask assembly, the substrate, the wafer stage, the displacement stage, and the active vibration isolation platform are all arranged inside the ultra-precision environmental control enclosure. The ultra-precision environmental control enclosure is used to provide a lithography environment with a cleanliness higher than a threshold value; A controller for controlling the precision environmental control enclosure, the solid-state laser, the laser frequency divider, the nanosecond optical parametric oscillator, the beam shaper, the displacement stage, and the active vibration isolation platform.

9. The device according to claim 8, wherein The lithography mask assembly is installed on a support structure, and the support structure is installed at a specified position on the active vibration isolation platform and is independent of the displacement stage and the wafer stage.

10. A deep ultraviolet near-field lithography method, characterized in that, The deep ultraviolet near-field lithography method is implemented based on the deep ultraviolet near-field lithography apparatus according to any one of claims 1 to 9. The method includes: In response to a first instruction, turn on the solid-state laser, set the positions and angles of at least two nonlinear optical crystals in the nanosecond optical parametric oscillator to generate a deep ultraviolet pulsed laser with a predetermined central wavelength; In response to a second instruction, control the working distance between the mask and the substrate to a predetermined distance; In response to a third instruction, based on the exposure dose, set the on-off time of the beam shaper, and based on the on-off time, control the beam shaper to make the shaped deep ultraviolet pulsed laser irradiate the lithography module, and perform deep ultraviolet near-field lithography on the substrate using the mask to obtain a high-resolution pattern.

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