Multilayer capacitor

Abstract

The present disclosure provides a multilayer capacitor. The multilayer capacitor includes: a capacitor body including a dielectric layer, an inner electrode, and a metal oxide layer disposed between the dielectric layer and the inner electrode; and an outer electrode disposed on an outer surface of the capacitor body, in which the inner electrode includes a compound represented by Chemical Formula 1 [Chemical Formula 1] Mn + 1AXn, in Chemical Formula 1, M includes at least one selected from the group consisting of Ti, Zr, Hf, Sc, Cr, V, Nb, Ta, Mo, and Mn, A includes at least one selected from the group consisting of Al, Ga, In, Tl, Si, Ge, Sn, Pb, Zn, Cd, P, As, S, Cu, and Au, X includes C, N, or a combination thereof, and n is an integer of 1 to 4.

Description

Technical Field

[0001] The present disclosure relates to a multilayer capacitor. Background Art

[0002] Recently, with the rapid development of the multifunctionalization and miniaturization of electronic devices, the miniaturization and performance improvement of electronic components have also rapidly developed. In addition, the demand for high reliability of electrical devices used in automobiles, network devices, etc. and electronic components used in industry has also increased significantly.

[0003] To meet such market demands, the competition in the technology development of passive components such as inductors, capacitors, or resistors has been accelerating. In particular, great efforts have been required to dominate the market by developing various multilayer ceramic capacitor (MLCC) products, and the applications and uses of such products as passive components have been continuously increasing.

[0004] In addition, multilayer capacitors are manufactured by stacking dielectric layers and internal electrodes, and are used in various electronic devices such as mobile phones, laptop computers, liquid crystal displays (LCDs), and televisions (TVs).

[0005] With recent technology development, multilayer capacitors are required to be miniaturized and have a high capacitance. To this end, technologies have been developed to increase the effective electrode area by improving the connectivity of the internal electrodes in contact with the dielectric layer or to atomize the dielectric material and the internal electrode material.

[0006] Currently, in order to reduce the thermal shrinkage temperature difference between the dielectric layer and the internal electrode, internal electrodes are manufactured by adopting a method of adding a nano-sized barium titanate (BaTiO3) co-material.

[0007] However, if the content of the barium titanate co-material increases, the co-material diffused into the dielectric layer during sintering may increase the thickness of the dielectric layer due to the reduced layer density of the internal electrode, resulting in a side effect of reducing the capacitance of the capacitor. Summary of the Invention

[0008] One aspect of the present disclosure provides a multilayer capacitor having excellent electrode connectivity and excellent electrical characteristics.

[0009] However, the problems to be solved by the present disclosure are not limited to the foregoing problems, and can be extended in various ways within the scope of the technical ideas included in the present disclosure.

[0010] The multilayer capacitor according to an embodiment includes: a capacitor body including a dielectric layer, an internal electrode, and a metal oxide layer, the metal oxide layer being disposed between the dielectric layer and the internal electrode; and an external electrode disposed on an outer surface of the capacitor body, and The inner electrode includes a compound represented by Chemical Formula 1: [Chemical Formula 1] M n+1 AX n In Chemical Formula 1, M includes at least one selected from the group consisting of Ti, Zr, Hf, Sc, Cr, V, Nb, Ta, Mo, and Mn, A includes at least one selected from the group consisting of Al, Ga, In, Tl, Si, Ge, Sn, Pb, Zn, Cd, P, As, S, Cu, and Au, X includes C, N, or a combination thereof, and n is an integer from 1 to 4.

[0011] The compound represented by Chemical Formula 1 may include at least one selected from the group consisting of Ti2AlC, V2AlC, Cr2AlC, Nb2AlC, Ta2AlC, Zr2AlC, Ti2AlN, Ti3AlC2, V3AlC2, Ta3AlC2, Zr3AlC2, Ti4AlN3, V4AlC3, Nb4AlC3, Ta4AlC3, (Mo,V)4AlC3, Mo4VAlC4, Ti3SiC2, Ti4SiC3, Ti2CdC, Sc2InC, Sc2SnC, Ti2GaC, Ti2InC, Ti2TlC, V2GaC, Cr2GaC, Ti2GaN, Ti2InN, V2GaN, Cr2GaN, Ti2GeC, Ti2SnC, Ti2PbC, V2GeC, Cr2GeC, V2PC, V2AsC, Ti2SC, Zr2InC, Zr2TlC, Nb2GaC, Nb2InC, Mo2GaC, Zr2InN, Zr2TlN, Zr2SnC, Zr2PbC, Nb2SnC, Nb2PC, Nb2AsC, Zr2SC, Nb2SC, Hf2InC, Hf2TlC, Ta2GaC, Hf2SnC, Hf2PbC, Hf2SnN, Hf2SC, Ti2ZnC, Ti2ZnN, V2ZnC, Nb2CuC, Mn2GaC, Mo2AuC, Ti2AuN, Ti3GaC2, Ti3InC2, Ti3GeC2, Ti3SnC2, Ti3ZnC2, Ti4GaC3, and Ti4GeC3.

[0012] The compound represented by Chemical Formula 1 may include a compound represented by Chemical Formula 1A: [Chemical Formula 1A] M n+1 A l X n In Chemical Formula 1A, M includes at least one selected from the group consisting of Ti, Zr, Cr, V, Nb, Ta, Mo, Hf, Sc, and Mn, A 1 includes Al or Si, X includes C, N, or a combination thereof, and n is an integer from 1 to 4.

[0013] The compound represented by Chemical Formula 1A may include at least one selected from the group consisting of Ti2AlC, V2AlC, Cr2AlC, Nb2AlC, Ta2AlC, Zr2AlC, Ti2AlN, Ti3AlC2, V3AlC2, Ta3AlC2, Zr3AlC2, Ti4AlN3, V4AlC3, Nb4AlC3, Ta4AlC3, (Mo, V)4AlC3, Mo4VAlC4, Ti3SiC2, and Ti4SiC3.

[0014] The compound represented by Chemical Formula 1 may include the compound represented by Chemical Formula 1B: [Chemical Formula 1B] M n+1 AlC n In Chemical Formula 1B, M includes at least one selected from the group consisting of Ti, Zr, Cr, V, Nb, Ta, Mo, Hf, Sc, and Mn, and n is an integer from 1 to 4.

[0015] The compound represented by Chemical Formula 1B may include at least one selected from the group consisting of Ti2AlC, V2AlC, Cr2AlC, Nb2AlC, Ta2AlC, and Zr2AlC.

[0016] The inner electrode may further include a conductive metal, and The conductive metal may include at least one selected from the group consisting of Ni, Mg, Al, Zr, Bi, Ru, Ir, Cu, Co, Zn, Ag, Pd, Au, Mn, Cr, Pt, Sn, W, Ti, Pb, and their alloys.

[0017] The metal oxide layer may include at least one selected from the group consisting of Ni oxide, Mg oxide, Al oxide, Zr oxide, Bi oxide, Ru oxide, Ir oxide, Cu oxide, Co oxide, Zn oxide, Ag oxide, Pd oxide, Au oxide, Mn oxide, Cr oxide, Pt oxide, Sn oxide, W oxide, Ti oxide, and Pb oxide.

[0018] The dielectric layer contains a barium titanate-based compound as a main component, and the barium titanate-based compound may include at least one selected from the group consisting of Ba m TiO3 (0.995 ≤ m ≤ 1.010), (Ba 1-x Ca x ) m (Ti 1- y Zr y )O3 (0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20), Ba m (Ti 1-x Zr x )O3 (0.995 ≤ m ≤ 1.010, 0 < x ≤ 0.10), and (Ba 1-x Ca x ) m (Ti 1-y Sn y )O3 (0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20).

[0019] A multilayer capacitor according to another embodiment includes: a capacitor body including a dielectric layer, an internal electrode, and a metal oxide layer, the internal electrode including a conductive metal, the metal oxide layer being located between the dielectric layer and the internal electrode; and an external electrode provided on an outer surface of the capacitor body, wherein the internal electrode further includes a compound represented by Chemical Formula 1: [Chemical Formula 1] M n+1 AX n In Chemical Formula 1, M includes at least one selected from the group consisting of Ti, Zr, Hf, Sc, Cr, V, Nb, Ta, Mo, and Mn, A includes at least one selected from the group consisting of Al, Ga, In, Tl, Si, Ge, Sn, Pb, Zn, Cd, P, As, S, Cu, and Au, X includes C, N, or a combination thereof, and n is an integer from 1 to 4.

[0020] The compound represented by Chemical Formula 1 may include at least one selected from the group consisting of Ti2AlC, V2AlC, Cr2AlC, Nb2AlC, Ta2AlC, Zr2AlC, Ti2AlN, Ti3AlC2, V3AlC2, Ta3AlC2, Zr3AlC2, Ti4AlN3, V4AlC3, Nb4AlC3, Ta4AlC3, (Mo,V)4AlC3, Mo4VAlC4, Ti3SiC2, Ti4SiC3, Ti2CdC, Sc2InC, Sc2SnC, Ti2GaC, Ti2InC, Ti2TlC, V2GaC, Cr2GaC, Ti2GaN, Ti2InN, V2GaN, Cr2GaN, Ti2GeC, Ti2SnC, Ti2PbC, V2GeC, Cr2GeC, V2PC, V2AsC, Ti2SC, Zr2InC, Zr2TlC, Nb2GaC, Nb2InC, Mo2GaC, Zr2InN, Zr2TlN, Zr2SnC, Zr2PbC, Nb2SnC, Nb2PC, Nb2AsC, Zr2SC, Nb2SC, Hf2InC, Hf2TlC, Ta2GaC, Hf2SnC, Hf2PbC, Hf2SnN, Hf2SC, Ti2ZnC, Ti2ZnN, V2ZnC, Nb2CuC, Mn2GaC, Mo2AuC, Ti2AuN, Ti3GaC2, Ti3InC2, Ti3GeC2, Ti3SnC2, Ti3ZnC2, Ti4GaC3, and Ti4GeC3.

[0021] The compound represented by Chemical Formula 1 may include the compound represented by Chemical Formula 1A: [Chemical Formula 1A] M n+1 A l X n In Chemical Formula 1A, M includes at least one selected from the group consisting of Ti, Zr, Cr, V, Nb, Ta, Mo, Hf, Sc, and Mn, A 1 includes Al or Si, X includes C, N, or a combination thereof, and n is an integer from 1 to 4.

[0022] The compound represented by Chemical Formula 1A may include at least one selected from the group consisting of Ti2AlC, V2AlC, Cr2AlC, Nb2AlC, Ta2AlC, Zr2AlC, Ti2AlN, Ti3AlC2, V3AlC2, Ta3AlC2, Zr3AlC2, Ti4AlN3, V4AlC3, Nb4AlC3, Ta4AlC3, (Mo,V)4AlC3, Mo4VAlC4, Ti3SiC2, and Ti4SiC3.

[0023] The compound represented by Chemical Formula 1 may include the compound represented by Chemical Formula 1B: [Chemical Formula 1B] M n+1 AlC n In Chemical Formula 1B, M includes at least one selected from the group consisting of Ti, Zr, Cr, V, Nb, Ta, Mo, Hf, Sc, and Mn, and n is an integer from 1 to 4.

[0024] The compound represented by Chemical Formula 1B may include at least one selected from the group consisting of Ti2AlC, V2AlC, Cr2AlC, Nb2AlC, Ta2AlC, and Zr2AlC.

[0025] The external electrode may include a sintered metal layer in contact with the capacitor body, a conductive resin layer provided to cover the sintered metal layer, and a plating layer provided to cover the conductive resin layer.

[0026] The metal oxide layer may include at least one selected from the group consisting of Ni oxide, Mg oxide, Al oxide, Zr oxide, Bi oxide, Ru oxide, Ir oxide, Cu oxide, Co oxide, Zn oxide, Ag oxide, Pd oxide, Au oxide, Mn oxide, Cr oxide, Pt oxide, Sn oxide, W oxide, Ti oxide, and Pb oxide.

[0027] The dielectric layer may include a barium titanate-based compound as a main component, and The barium titanate-based compound may include from Ba m TiO3 (0.995 ≤ m ≤ 1.010), (Ba 1-x Ca x ) m (Ti 1- y Zr y )O3 (0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20), Ba m(Ti 1-x Zr x )O3 (0.995 ≤ m ≤ 1.010, 0 < x ≤ 0.10) and (Ba 1-x Ca x ) m (Ti 1-y Sn y )O3 (0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20).

[0028] The multilayer capacitor according to some embodiments of the present disclosure may have the advantages of excellent electrode connectivity and excellent electrical characteristics.

[0029] However, the various beneficial advantages and effects of the present invention are not limited to the foregoing description and may be more easily understood during the description of the specific embodiments of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 is a perspective view showing a multilayer capacitor according to an embodiment.

[0031] Figure 2 is a cross-sectional view of the multilayer capacitor taken along the line I-I'. Figure 1

[0032] Figure 3 is an exploded perspective view showing the stacked structure in the capacitor body of Figure 1

[0033] In Figure 4 , (a) is an SEM image of the conductive paste for the internal electrode according to the preparation example, (b) is a Ti mapping image for the SEM image in (a), (c) is an Al mapping image for the SEM image in (a), (d) is a C mapping image for the SEM image in (a), and (e) is a Ni mapping image for the SEM image in (a).

[0034] Figure 5 shows the X-ray diffraction (XRD) analysis results before and after sintering during the manufacture of the multilayer capacitor of Manufacturing Example 1.

[0035] Figure 6 shows the X-ray diffraction (XRD) analysis results before and after sintering during the manufacture of the multilayer capacitor of Comparative Example 2.

[0036] In Figure 7 ​​In (a), it is a scanning electron microscope (SEM) image of a part of the cross-section of a multilayer capacitor according to Example 1, (b) is a scanning electron microscope-energy dispersive spectrometer (SEM-EDS) analysis image by Ni mapping for the SEM image in (a), and (c) is a SEM-EDS analysis image by Ti mapping for the SEM image in (a).

[0037] Figure 8 It is a graph showing the results of line profile analysis of Al, C, and O elements based on the positional changes of the inner electrodes and dielectric layers of the multilayer capacitor according to Example 1.

[0038] Figure 9 It is a graph showing the results of line profile analysis of Ti and Ni elements based on the positional changes of the inner electrodes and dielectric layers of the multilayer capacitor according to Example 1. Detailed Description of the Invention

[0039] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement them. The drawings and the description are considered to be illustrative rather than restrictive in nature. Throughout the specification, the same reference numerals denote the same elements. In addition, the accompanying drawings are provided to facilitate an easy understanding of the exemplary embodiments disclosed in this specification, and the technical spirit disclosed in this specification is not limited by the drawings, and it should be understood that the present invention includes all variations, equivalents, and alternatives included within the spirit and technical scope of the present invention.

[0040] Terms including ordinal numbers (such as first and second) are used to describe various components, but these components are not limited by these terms. These terms are only used to distinguish one component from another.

[0041] When a component is referred to as being "connected" or "coupled" to another component, it should be understood that it can be directly connected or coupled to the other component, or there may be other intermediate components. In contrast, when a component is referred to as being "directly connected" or "directly coupled" to another component, it should be understood that there are no other intermediate components.

[0042] In this specification, it should be understood that the terms "comprising" and "having" are intended to specify the presence of the features, quantities, steps, operations, components, and assemblies described in the specification, or combinations thereof, and do not exclude the possibility of the pre-existence or addition of one or more other features, quantities, steps, operations, components, and assemblies, or combinations thereof. Therefore, unless explicitly described to the contrary, the words "comprising" and variations such as "including" or "having" will be understood to imply the inclusion of the stated elements but not the exclusion of any other elements.

[0043] As used herein, the term "main component" means 50 mass% or more, 50 mol% or more of the constituent components.

[0044] Figure 1 is a perspective view showing a multilayer capacitor 100 according to an embodiment, Figure 2 is along Figure 1 a cross-sectional view of the multilayer capacitor 100 taken along line I-I', and Figure 3 is a perspective exploded view showing Figure 1 the stacked structure in the capacitor body 110.

[0045] For clearly describing the present exemplary embodiment, the directions are defined as follows: The L-axis, W-axis, and T-axis shown in the drawings respectively represent the length direction, width direction, and thickness direction of the capacitor body 110. Herein, the thickness direction (T-axis direction) may be a direction perpendicular to the wide surface (main surface) of the sheet-like constituent elements and may be used as, for example, the same concept as the stacking direction of the stacked dielectric layers 111. The length direction (L-axis direction) may be a direction extending parallel to the wide surface (main surface) of the sheet-like constituent elements and may be a direction substantially perpendicular to the thickness direction (T-axis direction), and may be, for example, the direction in which the first outer electrode 131 and the second outer electrode 132 face each other. The width direction (W-axis direction) may be a direction extending parallel to the wide surface (main surface) of the sheet-like constituent elements and may be a direction substantially perpendicular to the thickness direction (T-axis direction) and the length direction (L-axis direction), and the length of the sheet-like constituent elements in the length direction (L-axis direction) may be longer than the length of the sheet-like constituent elements in the width direction (W-axis direction).

[0046] Referring to Figures 1 to 3 , the multilayer capacitor 100 according to the exemplary embodiment may include a capacitor body 110 and first and second outer electrodes 131 and 132 provided at opposite ends of the capacitor body 110 in the length direction (L-axis direction).

[0047] The capacitor body 110 may have, for example, an approximate hexahedral shape.

[0048] In the present embodiment, for ease of explanation, in the capacitor body 110, two surfaces facing each other in the thickness direction (T-axis direction) are defined as the first surface and the second surface, and two surfaces bonded to the first surface and the second surface and facing each other in the length direction (L-axis direction) are defined as the third surface and the fourth surface, and two surfaces bonded to the first surface and the second surface, bonded to the third surface and the fourth surface, and facing each other in the width direction (W-axis direction) are defined as the fifth surface and the sixth surface.

[0049] As an example, the first surface, which is the lower surface, may be the mounting surface. Additionally, the first through sixth surfaces may be flat; however, the present exemplary embodiment is not limited thereto, and for example, the first through sixth surfaces may be curved surfaces having a convex central portion, and the boundary (i.e., the edge) of each surface may be rounded.

[0050] The shape and size of the capacitor body 110 and the number of stacked dielectric layers 111 are not limited to those shown in the drawings of the present exemplary embodiment for the capacitor body and the number of stacked dielectric layers.

[0051] The capacitor body 110 is formed by stacking a plurality of dielectric layers 111 in the thickness direction (T-axis direction) and sintering them, and the capacitor body 110 includes a plurality of dielectric layers 111 and first and second internal electrodes 121 and 122 which are alternately arranged in the thickness direction (T-axis direction), and the dielectric layers 111 are interposed between the first and second internal electrodes 121 and 122.

[0052] In this case, adjacent dielectric layers 111 in the capacitor body 110 may be integrated such that it is difficult to distinguish the boundary between adjacent dielectric layers without using a scanning electron microscope (SEM).

[0053] Furthermore, the capacitor body 110 may include an effective region and covering regions 112 and 113.

[0054] The effective region is the part that contributes to the formation of the capacitance of the multilayer capacitor 100. As an example, the effective region may be the region where the first and second internal electrodes 121 and 122 are stacked in the thickness direction (T-axis direction).

[0055] The covering regions 112 and 113 are edge portions in the thickness direction and may be located on one side of the effective region closer to the first surface in the thickness direction (T-axis direction) and on one side of the effective region closer to the second surface in the thickness direction (T-axis direction). These covering regions 112 and 113 may be respectively stacked on the upper and lower surfaces of the effective region, and each covering region may be composed of a single dielectric layer or two or more dielectric layers.

[0056] In addition, the capacitor body 110 may further include side covering regions. The side covering regions are edge portions in the width direction and may be respectively located on one side of the active region closer to the fifth surface and on one side of the active region closer to the sixth surface in the width direction (W-axis direction). These side covering regions may be formed by stacking dielectric green sheets having conductive paste layers for forming internal electrodes and sintering them. When forming the conductive paste layer on the surface of the dielectric green sheet, the conductive paste may be coated only on a part of the surface of the dielectric green sheet and may not be coated on the part of the surface of the dielectric green sheet that will form the side covering regions.

[0057] The covering regions 112 and 113 and the side covering regions may be used to prevent damage to the first internal electrode 121 and the second internal electrode 122 due to physical stress and / or chemical stress.

[0058] The multilayer capacitor 100 according to some embodiments of the present disclosure includes: a capacitor body 110 including a dielectric layer 111, internal electrodes 121 and 122, and a metal oxide layer disposed between the dielectric layer 111 and the internal electrodes 121 and 122; and external electrodes 131 and 132 disposed outside the capacitor body 110.

[0059] Hereinafter, the multilayer capacitor 100 will be described in detail with reference to the accompanying drawings.

[0060] Inner electrode The first internal electrode 121 and the second internal electrode 122 are electrodes having different polarities and may be alternately disposed along the T-axis direction such that adjacent first and second internal electrodes with the dielectric layer 111 interposed therebetween face each other, and one end of each internal electrode may be exposed from the third surface or the fourth surface of the capacitor body 110.

[0061] The first internal electrode 121 and the second internal electrode 122 may be electrically insulated from each other by the dielectric layer 111 disposed therebetween.

[0062] The ends of the first internal electrode 121 and the second internal electrode 122 alternately exposed from the third surface and the fourth surface of the capacitor body 110 may be electrically coupled to the first external electrode 131 and the second external electrode 132, respectively.

[0063] In some embodiments, the internal electrodes 121 and 122 include a compound represented by Chemical Formula 1.

[0064] [Chemical Formula 1] M n+1 AX n In Chemical Formula 1, M includes at least one selected from the group consisting of Ti, Zr, Hf, Sc, Cr, V, Nb, Ta, Mo, and Mn, A includes at least one selected from the group consisting of Al, Ga, In, Tl, Si, Ge, Sn, Pb, Zn, Cd, P, As, S, Cu, and Au, X includes C, N, or a combination thereof, and n is an integer from 1 to 4.

[0065] For example, the compound represented by Chemical Formula 1 may be a MAX phase compound. The MAX phase compound may be a compound having both metallic and ceramic properties, and may have excellent thermal conductivity and electrical conductivity, and may have high strength and high modulus.

[0066] For example, the MAX phase compound may have a sintering temperature higher than that of a metal such as Ni, and thus there may be no significant difference in terms of the sintering temperature between the MAX phase compound and the dielectric material of the dielectric layer 111. Therefore, when the inner electrodes 121 and 122 including the MAX phase compound are sintered together with the dielectric layer 111, no mismatch problem with the dielectric layer 111 occurs, and thus the electrode connectivity can be significantly improved by preventing disconnection or thickness expansion of the inner electrodes 121 and 122.

[0067] For example, the compound represented by Chemical Formula 1 may include at least one selected from the group consisting of Ti2AlC, V2AlC, Cr2AlC, Nb2AlC, Ta2AlC, Zr2AlC, Ti2AlN, Ti3AlC2, V3AlC2, Ta3AlC2, Zr3AlC2, Ti4AlN3, V4AlC3, Nb4AlC3, Ta4AlC3, (Mo,V)4AlC3, Mo4VAlC4, Ti3SiC2, Ti4SiC3, Ti2CdC, Sc2InC, Sc2SnC, Ti2GaC, Ti2InC, Ti2TlC, V2GaC, Cr2GaC, Ti2GaN, Ti2InN, V2GaN, Cr2GaN, Ti2GeC, Ti2SnC, Ti2PbC, V2GeC, Cr2GeC, V2PC, V2AsC, Ti2SC, Zr2InC, Zr2TlC, Nb2GaC, Nb2InC, Mo2GaC, Zr2InN, Zr2TlN, Zr2SnC, Zr2PbC, Nb2SnC, Nb2PC, Nb2AsC, Zr2SC, Nb2SC, Hf2InC, Hf2TlC, Ta2GaC, Hf2SnC, Hf2PbC, Hf2SnN, Hf2SC, Ti2ZnC, Ti2ZnN, V2ZnC, Nb2CuC, Mn2GaC, Mo2AuC, Ti2AuN, Ti3GaC2, Ti3InC2, Ti3GeC2, Ti3SnC2, Ti3ZnC2, Ti4GaC3 and Ti4GeC3.

[0068] For example, the compound represented by Chemical Formula 1 may include the compound represented by Chemical Formula 1A.

[0069] [Chemical Formula 1A] M n+1 A l X n In Chemical Formula 1A, M includes at least one selected from the group consisting of Ti, Zr, Cr, V, Nb, Ta, Mo, Hf, Sc and Mn, A 1 includes Al or Si, X includes C, N or a combination thereof, and n is an integer from 1 to 4.

[0070] For example, the compound represented by Chemical Formula 1A may include at least one selected from the group consisting of Ti2AlC, V2AlC, Cr2AlC, Nb2AlC, Ta2AlC, Zr2AlC, Ti2AlN, Ti3AlC2, V3AlC2, Ta3AlC2, Zr3AlC2, Ti4AlN3, V4AlC3, Nb4AlC3, Ta4AlC3, (Mo,V)4AlC3, Mo4VAlC4, Ti3SiC2, and Ti4SiC3.

[0071] For example, the compound represented by Chemical Formula 1 may include the compound represented by Chemical Formula 1B.

[0072] [Chemical Formula 1B] M n+1 AlC n In Chemical Formula 1B, M includes at least one selected from the group consisting of Ti, Zr, Cr, V, Nb, Ta, Mo, Hf, Sc, and Mn, and n is an integer from 1 to 4.

[0073] For example, the compound represented by Chemical Formula 1B may include at least one selected from the group consisting of Ti2AlC, V2AlC, Cr2AlC, Nb2AlC, Ta2AlC, and Zr2AlC.

[0074] For example, the inner electrodes 121 and 122 may further include a conductive metal, where the conductive metal may be the same as or different from the sacrificial metal to be described later. For example, the conductive metal may include the part of the sacrificial metal contained in the conductive paste for the inner electrodes that is not oxidized during sintering and is bound in the inner electrodes 121 and 122.

[0075] For example, the conductive metal included in the inner electrodes 121 and 122 may include at least one selected from the group consisting of Ni, Mg, Al, Zr, Bi, Ru, Ir, Cu, Co, Zn, Ag, Pd, Au, Mn, Cr, Pt, Sn, W, Ti, Pb, and their alloys.

[0076] In addition, the inner electrodes 121 and 122 may include dielectric particles having the same composition as the ceramic material included in the dielectric layer 111.

[0077] As an example, the inner electrodes 121 and 122 may be formed using a conductive paste including a conductive metal. The printing method of the conductive paste may include screen printing, gravure printing, etc.

[0078] As an example, the average thickness of the first internal electrode 121 and the average thickness of the second internal electrode 122 may be greater than or equal to about 0.05 μm, greater than or equal to about 0.1 μm, greater than or equal to about 0.2 μm, or greater than or equal to about 0.25 μm, and less than or equal to about 2 μm, less than or equal to about 1 μm, or less than or equal to about 0.5 μm.

[0079] The average thickness of the first internal electrode 121 and / or the second internal electrode 122 can be measured by the following method.

[0080] First, the multilayer capacitor 100 is placed in an epoxy resin mixture and cured, and the side surfaces of the capacitor body 110 in the L-axis direction and the T-axis direction are polished to the 1 / 2 point of the capacitor body 110 in the W-axis direction, and then placed in a vacuum atmosphere chamber, so as to obtain a cross-section in the L-axis direction and the T-axis direction at the center of the capacitor body 110 in the W-axis direction to prepare a cross-section sample (hereinafter referred to as "cross-section sample").

[0081] The average thickness of the first internal electrode 121 and / or the second internal electrode 122 can be: when the central point of the first internal electrode 121 and / or the second internal electrode 122 in the length direction (L-axis direction) is used as a reference point, the arithmetic mean of the thicknesses of the first internal electrode 121 and / or the second internal electrode 122 at 10 points separated from the reference point at a predetermined interval in the scanning electron microscope (SEM) image of the cross-section sample.

[0082] The interval between the 10 points can be adjusted according to the scale of the SEM image, and can be, for example, about 1 μm to about 100 μm, about 1 μm to about 50 μm, or about 1 μm to about 10 μm. The interval here can refer to the interval between two adjacent points.

[0083] In this case, all 10 points should be located within the first internal electrode 121 or the second internal electrode 122, and when all 10 points are not all located within the first internal electrode 121 or the second internal electrode 122, the position of the reference point can be changed or the interval of the 10 points can be adjusted.

[0084] Metal oxide layer The multilayer capacitor 100 according to some embodiments of the present disclosure may include a metal oxide layer (not shown) located between the dielectric layer 111 and the internal electrodes 121 and 122. The metal oxide layer can be a reaction barrier layer that inhibits the oxidation of the MAX phase compound included in the internal electrodes 121 and 122.

[0085] If the conductive paste for the internal electrode solely includes a MAX phase compound and is sintered, the elements constituting the MAX phase compound may be oxidized and the MAX phase compound may be decomposed. Further, if the compound represented by Chemical Formula 1 is fired in an oxygen atmosphere, since the relatively weakly bonded A element is oxidized, A-oxide is formed, and thus the compound represented by Chemical Formula 1 may be decomposed. As the A element is oxidized and escapes from the compound represented by Chemical Formula 1, the MAX phase compound may be decomposed into binary compounds or the like. Here, the MAX phase compound may be removed, thereby deteriorating the electrical characteristics of the internal electrodes 121 and 122.

[0086] On the other hand, in the multilayer capacitor 100 according to some embodiments of the present disclosure, during the formation of the internal electrode, a metal oxide layer may be formed by adding a metal having excellent metal reactivity (hereinafter, referred to as "sacrificial metal") to the MAX phase compound and firing them together, such that the sacrificial metal may be oxidized earlier than the MAX phase compound during firing.

[0087] For example, the MAX phase compound may decompose at about 900 °C to about 1000 °C, and the sacrificial metal having an oxidation reaction at about 900 °C or lower temperatures may be oxidized earlier than the MAX phase compound. For example, Ti may be oxidized at about 600 °C, Mg may be oxidized at about 450 °C, and Cr may be oxidized at about 650 °C.

[0088] The formed metal oxide layer may prevent the decomposition of the MAX phase compound, thereby improving the electrical characteristics of the multilayer capacitor 100.

[0089] For example, the metal oxide layer may include a metal oxide, and the metal oxide may be appropriately selected according to the type of A included in Chemical Formula 1. The metal oxide may be an oxide formed by the oxidation of the sacrificial metal included in the conductive paste for the internal electrode.

[0090] For example, the metal oxide may include at least one selected from the group consisting of Ni oxide, Mg oxide, Al oxide, Zr oxide, Bi oxide, Ru oxide, Ir oxide, Cu oxide, Co oxide, Zn oxide, Ag oxide, Pd oxide, Au oxide, Mn oxide, Cr oxide, Pt oxide, Sn oxide, W oxide, Ti oxide, and Pb oxide.

[0091] Dielectric layer The dielectric layer 111 includes a dielectric material, and the dielectric material may include a main component and a sub-component.

[0092] The main component is a dielectric matrix material, may have a high dielectric constant, and may contribute to the formation of the capacitance of the multilayer capacitor 100.

[0093] For example, the main component may include a barium titanate-based compound, and the barium titanate-based compound may be at least one dielectric material selected from the group consisting of Ba m TiO3 (0.995 ≤ m ≤ 1.010), (Ba 1-x Ca x ) m (Ti 1-y Zr y )O3 (0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20), Ba m (Ti 1-x Zr x )O3 (0.995 ≤ m ≤ 1.010, 0 < x ≤ 0.10), and (Ba 1-x Ca x ) m (Ti 1-y Sn y )O3 (0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20).

[0094] For example, the main component may include at least one selected from the group consisting of BaTiO3, Ba(Ti 、 Zr)O3, Ba(Ti, Sn)O3, (Ba, Ca)TiO3, (Ba,Ca)(Ti, Zr)O3, (Ba, Ca)(Ti, Sn)O3, (Ba, Sr)TiO3, (Ba, Sr)(Ti, Zr)O3, and (Ba, Sr)(Ti,Sn)O3.

[0095] For example, the secondary component may include at least one selected from the group consisting of dysprosium (Dy), vanadium (V), manganese (Mn), chromium (Cr), silicon (Si), aluminum (Al), magnesium (Mg), tin (Sn), antimony (Sb), germanium (Ge), gallium (Ga), barium (Ba), lanthanum (La), yttrium (Y), actinium (Ac), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), hafnium (Hf), and indium (In).

[0096] The dielectric material may further include at least one selected from the group consisting of ceramic additives, organic solvents, binders, and dispersants.

[0097] For example, the average thickness of the dielectric layer 111 may be greater than or equal to about 0.2 μm, greater than or equal to about 0.5 μm, greater than or equal to about 1.0 μm, or greater than or equal to about 2.0 μm, and may be less than or equal to about 5.0 μm or less than or equal to about 3.0 μm.

[0098] The average thickness of the dielectric layer 111 can be measured by the following method.

[0099] First, prepare a scanning electron microscope (SEM) image obtained by observing a cross-sectional sample with a scanning electron microscope.

[0100] The average thickness of the dielectric layer 111 can be: when the central point of the dielectric layer 111 in the length direction (L-axis direction) is used as a reference point, the arithmetic average of the thicknesses of the dielectric layer 111 at 10 points separated from the reference point by a predetermined interval in the SEM image of the cross-sectional sample.

[0101] The interval between the 10 points can be adjusted according to the scale of the SEM image and can be, for example, about 1 μm to about 100 μm, about 1 μm to about 50 μm, or about 1 μm to about 10 μm. The interval here can refer to the interval between two adjacent points.

[0102] In this case, all 10 points should be located within the dielectric layer 111, and when not all 10 points are located within the dielectric layer 111, the position of the reference point can be changed or the interval of the 10 points can be adjusted.

[0103] Outer electrode The first external electrode 131 and the second external electrode 132 can receive voltages of different polarities and can be electrically connected to the exposed portions of the first internal electrode 121 and the second internal electrode 122, respectively.

[0104] According to the above configuration, when a predetermined voltage is applied between the first external electrode 131 and the second external electrode 132, charges accumulate between the first internal electrode 121 and the second internal electrode 122 that face each other. At this time, the capacitance of the multilayer capacitor 100 becomes proportional to the overlapping area of the first internal electrode 121 and the second internal electrode 122 that are stacked along the T-axis direction in the effective region.

[0105] The first external electrode 131 and the second external electrode 132 may be respectively disposed on the third surface and the fourth surface of the capacitor body 110, and the first external electrode 131 may include a first connection portion in contact with the first internal electrode 121 and a first strip portion disposed at an edge where the third surface of the capacitor body 110 intersects with the first surface, the second surface, and / or the fifth surface and the sixth surface. The second external electrode 132 may include a second connection portion in contact with the second internal electrode 122 and a second strip portion disposed at an edge where the fourth surface of the capacitor body 110 intersects with the first surface, the second surface, and / or the fifth surface and the sixth surface.

[0106] The first strip portion and the second strip portion may respectively extend from the first connection portion and the second connection portion to a part of the first surface, a part of the second surface, and / or a part of the fifth surface and a part of the sixth surface of the capacitor body 110. The first strip portion and the second strip portion may be used to improve the adhesion strength between the first external electrode 131 and the second external electrode 132 and the capacitor body 110.

[0107] According to some embodiments, each of the first external electrode 131 and the second external electrode 132 may include a sintered metal layer in contact with the capacitor body 110, a conductive resin layer disposed to cover the sintered metal layer, and a plating layer disposed to cover the conductive resin layer.

[0108] The sintered metal layer may include a conductive metal and glass.

[0109] According to some embodiments, the sintered metal layer may include at least one selected from the group consisting of copper (Cu), nickel (Ni), silver (Ag), palladium (Pd), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), lead (Pb), and their alloys as the conductive metal, and for example, including copper (Cu) in the sintered metal layer may mean that the sintered metal layer may also include a copper (Cu) alloy. When the conductive metal includes copper, based on 100 moles of copper, a metal other than copper may be included in an amount less than or equal to about 5 moles.

[0110] According to some embodiments, the sintered metal layer may include a composition containing an oxide as glass, and may include, for example, one or more selected from the group consisting of silicon oxide, boron oxide, aluminum oxide, transition metal oxides, alkali metal oxides, and alkaline earth metal oxides. The transition metal may include at least one selected from the group consisting of zinc (Zn), titanium (Ti), copper (Cu), vanadium (V), manganese (Mn), iron (Fe), and nickel (Ni), and the alkali metal may be selected from lithium (Li), sodium (Na), and potassium (K), and the alkaline earth metal may be one or more selected from magnesium (Mg), calcium (Ca), strontium (Sr), and barium (Ba).

[0111] Optionally, a conductive resin layer is formed on the sintered metal layer and, for example, may be formed to completely cover the sintered metal layer. Additionally, the first external electrode 131 and the second external electrode 132 may not include the sintered metal layer, and in this case, the conductive resin layer may be in direct contact with the capacitor body 110.

[0112] The conductive resin layer may extend to the first surface and the second surface and / or the fifth surface and the sixth surface of the capacitor body 110, and the length of the region (i.e., the strip portion) where the conductive resin layer extends to the first surface and the second surface and / or the fifth surface and the sixth surface of the capacitor body 110 may be longer than the length of the region (i.e., the strip portion) where the sintered metal layer extends to the first surface and the second surface and / or the fifth surface and the sixth surface of the capacitor body 110. In other words, the conductive resin layer may be formed on the sintered metal layer and may be formed to completely cover the sintered metal layer.

[0113] The conductive resin layer may include a resin and a conductive metal.

[0114] The resin included in the conductive resin layer is not particularly limited as long as it has binding properties and shock absorption properties and can be mixed with the conductive metal powder to form a paste, and may include, for example, a phenolic resin, an acrylic resin, a silicone resin, an epoxy resin, or a polyimide resin.

[0115] The conductive metal included in the conductive resin layer can be used to electrically connect the conductive resin layer to the first internal electrode 121 and the second internal electrode 122 or the sintered metal layer.

[0116] The conductive metal included in the conductive resin layer may have a spherical shape, a flake shape, or a combination thereof. In other words, the conductive metal may be formed only in a flake shape, or may be formed only in a spherical shape, or may be in the form of a mixture of a flake shape and a spherical shape.

[0117] Here, the spherical shape may include a shape that is not completely spherical, and may include, for example, a shape in which the ratio of the length of the major axis to the length of the minor axis (major axis / minor axis) is less than or equal to about 1.45. The flake shape refers to a flat and elongated shape and is not particularly limited. For example, the ratio of the length of the major axis to the length of the minor axis (major axis / minor axis) may be greater than or equal to about 1.95.

[0118] The first external electrode 131 and the second external electrode 132 may further include a plating layer provided outside the conductive resin layer.

[0119] The plating layer may include at least one selected from the group consisting of nickel (Ni), copper (Cu), tin (Sn), palladium (Pd), platinum (Pt), gold (Au), silver (Ag), tungsten (W), titanium (Ti), lead (Pb), and their alloys. According to some embodiments, each plating layer may include a nickel (Ni) plating layer or a tin (Sn) plating layer, or may be in a form in which a nickel (Ni) plating layer and a tin (Sn) plating layer are stacked in sequence, or may be in a form in which a tin (Sn) plating layer, a nickel (Ni) plating layer, and a tin (Sn) plating layer are stacked in sequence. Optionally, each plating layer may include a plurality of nickel (Ni) plating layers and / or a plurality of tin (Sn) plating layers.

[0120] The plating layer can improve the mountability on the substrate, structural reliability, external durability, heat resistance, and equivalent series resistance (ESR) of the multilayer capacitor 100.

[0121] Method for manufacturing a multilayer capacitor A method for manufacturing a multilayer capacitor according to another embodiment includes: manufacturing a capacitor body including a dielectric layer and an internal electrode, and then forming an external electrode on the outside of the capacitor body.

[0122] First, the process of manufacturing the capacitor body will be described.

[0123] In the manufacturing process of the capacitor body, a dielectric paste that will be formed into a dielectric layer after sintering and a conductive paste that will be formed into an internal electrode after sintering are prepared.

[0124] The dielectric paste is prepared, for example, in the following manner. The dielectric powder is uniformly mixed by wet mixing or the like, dried, and heat-treated under predetermined conditions. Subsequently, an organic carrier or an aqueous carrier is added to the dielectric powder, and additionally, kneading is performed to prepare the dielectric paste.

[0125] The obtained dielectric paste can be formed into a dielectric green sheet by using a technique such as the doctor blade method. Additionally, if necessary, the dielectric paste may include additives selected from various dispersants, plasticizers, binders, sub-component compounds, and glass.

[0126] The conductive paste for the internal electrode can be prepared by kneading a compound represented by Chemical Formula 1 and a conductive metal used as a sacrificial metal with a binder or a solvent.

[0127] [Chemical Formula 1] M n+1 AX n In Chemical Formula 1, M includes at least one selected from the group consisting of Ti, Zr, Hf, Sc, Cr, V, Nb, Ta, Mo, and Mn, A includes at least one selected from the group consisting of Al, Ga, In, Tl, Si, Ge, Sn, Pb, Zn, Cd, P, As, S, Cu, and Au, X includes C, N, or a combination thereof, and n is an integer from 1 to 4.

[0128] The compound represented by Chemical Formula 1 and the conductive metal used as the sacrificial metal are the same as those described previously, and a detailed description thereof will be omitted.

[0129] Based on the total amount of the conductive paste for the inner electrode, the compound represented by Chemical Formula 1 may be included in an amount of about 1 wt% to about 10 wt%.

[0130] When the amount of the compound represented by Chemical Formula 1 included is less than about 1 wt% based on the total amount of the conductive paste for the inner electrode, the MAX phase compound included in the inner electrode may be decomposed without forming a metal oxide layer having a sufficient thickness. Additionally, if the amount of the compound represented by Chemical Formula 1 included is greater than about 10 wt% based on the total amount of the conductive paste for the inner electrode, it may be difficult to sufficiently improve the electrode connectivity.

[0131] The conductive paste for the inner electrode is coated on the surface of the green dielectric sheet in a predetermined pattern by various printing methods such as a screen printing method or a transfer printing method. Subsequently, a plurality of green dielectric sheets having inner electrode patterns are stacked, and then pressed in the stacking direction to obtain a green dielectric sheet laminate. Here, the green dielectric sheet laminate may have green dielectric sheets uncoated with inner electrode patterns at the top and bottom in the stacking direction.

[0132] Optionally, the obtained green dielectric sheet laminate may be cut into a predetermined size by cutting or the like.

[0133] Furthermore, if necessary, the green dielectric sheet laminate may be cured and dried to remove a plasticizer or the like, and then polished using a horizontal centrifugal drum machine or the like. In the drum polishing, the unnecessary portions (such as burrs generated during cutting) may be polished by putting the green dielectric sheet laminate together with a medium and a polishing solution into a drum container, and then applying a rotational motion, vibration, or the like to the drum container. Additionally, after the drum polishing, the green dielectric sheet laminate may be cleaned with a cleaning solution such as water and dried.

[0134] The green dielectric sheet laminate is subjected to an adhesive removal treatment and a sintering treatment to obtain a capacitor body.

[0135] The adhesive removal treatment is carried out under conditions appropriately adjusted according to the main component composition of the dielectric layer and / or the main component composition of the inner electrode. For example, the adhesive removal treatment can be carried out by raising the temperature at about 5 °C / hour to about 300 °C / hour and holding at a holding temperature of about 180 °C to about 400 °C for about 0.5 hour to about 24 hours. The adhesive removal treatment can be carried out in air or a reducing atmosphere.

[0136] The sintering treatment can be carried out under conditions appropriately adjusted according to the main component composition of the dielectric layer and / or the main component composition of the inner electrode. For example, the sintering treatment can be carried out at about 1200 °C to about 1350 °C (e.g., about 1220 °C to about 1300 °C) for about 0.5 hour to about 8 hours (e.g., about 1 hour to about 3 hours). The sintering treatment can be carried out in a reducing atmosphere, for example, in an atmosphere where a mixed gas of nitrogen (N2) and hydrogen (H2) is humidified.

[0137] After the sintering treatment, annealing can be carried out. Since annealing is a treatment for re-oxidizing the dielectric layer, if the sintering is carried out in a reducing atmosphere, annealing can be carried out. The annealing treatment is carried out under conditions appropriately adjusted according to the main component composition of the dielectric layer, etc. For example, the annealing treatment can be carried out by raising the temperature at about 50 °C / hour to about 500 °C / hour and holding at about 950 °C to about 1150 °C for more than 0 hour and less than or equal to about 20 hours. In addition, the annealing treatment can be carried out in a humidified nitrogen (N2) atmosphere at an oxygen partial pressure of about 1.0×10 -9 MPa to about 1.0×10 -5 MPa.

[0138] For example, wetting nitrogen, a mixed gas, etc. in the adhesive removal treatment, sintering treatment, or annealing treatment can be carried out by using a wetting agent (such as water), etc., where the temperature of the wetting agent (such as water) used can be about 5 °C to about 75 °C. The adhesive removal treatment, sintering treatment, and annealing treatment can be carried out sequentially or independently.

[0139] Optionally, the third surface and the fourth surface of the capacitor body can be subjected to surface treatment (such as sandblasting, laser irradiation, or barrel polishing). This surface treatment can expose the ends of the first inner electrode and the second inner electrode to the third surface and the fourth surface, which can strengthen the electrical connection between the first outer electrode and the first inner electrode and the electrical connection between the second outer electrode and the second inner electrode and easily form an alloy part.

[0140] Subsequently, a paste for forming a sintered metal layer is coated on the outer side of the obtained capacitor body and sintered to form a sintered metal layer included in the outer electrode.

[0141] The paste for forming a sintered metal layer may include a conductive metal and glass. The conductive metal and glass are the same as those described above, and thus will not be repeated. In addition, the paste for forming a sintered metal layer may optionally include sub-components such as a binder, a solvent, a dispersant, a plasticizer, and / or an oxide powder. For example, the binder may include ethyl cellulose, acrylic acid, or butyral, and the solvent may include an organic solvent such as terpineol, butyl carbitol, ethanol, methyl ethyl ketone, acetone, or toluene, or an aqueous solvent.

[0142] The method of coating the paste for forming a sintered metal layer on the outer side of the capacitor body may include an immersion method, various printing methods such as a screen printing method, a coating method by using a dispenser, etc., a spraying method by using a sprayer, etc. The paste for forming a sintered metal layer is coated at least on the third surface and the fourth surface of the capacitor body, and optionally, on a part of the belt portions of the first surface, the second surface, the fifth surface, and / or the sixth surface where the first outer electrode and the second outer electrode will be formed.

[0143] Subsequently, the capacitor body coated with the paste for forming a sintered metal layer is dried and sintered at about 700 °C to about 1000 °C for about 0.1 hour to about 3 hours to form a sintered metal layer.

[0144] Optionally, on the outer side of the obtained capacitor body, a paste for forming a conductive resin layer is coated and cured to form a conductive resin layer.

[0145] The paste for forming a conductive resin layer may include a resin and a conductive metal, and may optionally further include a non-conductive filler. Since the descriptions of the conductive metal and the resin are the same as those above, the repeated descriptions will be omitted. In addition, the paste for forming a conductive resin layer may optionally include sub-components such as a binder, a solvent, a dispersant, a plasticizer, and / or an oxide powder. For example, the binder may include ethyl cellulose, acrylic acid, or butyral, and the solvent may include an organic solvent such as terpineol, butyl carbitol, ethanol, methyl ethyl ketone, acetone, or toluene, or an aqueous solvent.

[0146] For example, the method of forming a conductive resin layer may include: dipping the capacitor body 110 into the paste for forming a conductive resin layer and curing it, or printing the paste for forming a conductive resin layer on the surface of the capacitor body 110 by a screen printing method, a gravure printing method, etc., or coating the paste for forming a conductive resin layer on the surface of the capacitor body 110 and then curing it.

[0147] Subsequently, a plating layer is formed on the outer side of the conductive resin layer.

[0148] For example, the plating layer may be formed by a plating method, for example, by sputtering or electroplating.

[0149] In the following, specific examples of the present invention will be presented. However, the following examples are only intended to specifically illustrate or describe the present invention and should not be construed as limiting the scope of the present invention.

[0150] Preparation example: Preparation of a conductive paste for an inner electrode Prepare a conductive paste for an inner electrode including Ti3AlC2 and a sacrificial metal Ni. Specifically, after weighing the materials such that Ni is included in an amount of about 4.6 wt% based on the total amount of the conductive paste for the inner electrode, Ti3AlC2 and Ni are randomly mixed to prepare the conductive paste for the inner electrode.

[0151] Example: Manufacturing of a multilayer capacitor Example 1 Prepare a dielectric green sheet as follows: Prepare a dielectric slurry including BaTiO3, and then coat the dielectric slurry using a coating head discharge type roll coater.

[0152] Print the conductive paste for the inner electrode prepared in the preparation example on the surface of the dielectric green sheet, and stack and press a plurality of dielectric green sheets having a conductive paste layer to manufacture a dielectric green sheet laminate (width × length × height = 3.2 mm × 2.5 mm × 2.5 mm).

[0153] Perform an adhesive removal treatment on the dielectric green sheet laminate at a temperature of 400 °C or lower in a nitrogen atmosphere, and perform a sintering treatment at a temperature of 1300 °C or lower in a hydrogen (H2) concentration of 1.0% or lower to manufacture a multilayer capacitor according to Example 1.

[0154] Comparative Example 1 Manufacture a multilayer capacitor according to Comparative Example 1 in the same manner as in Example 1, except that a conductive paste for an inner electrode including Ni and a co-material (BaTiO3) is prepared.

[0155] Comparative Example 2 Manufacture a multilayer capacitor according to Comparative Example 2 in the same manner as in Example 1, except that a conductive paste for an inner electrode including only Ti3AlC2 and not including the sacrificial metal Ni is prepared.

[0156] (Evaluation Example) Evaluation Example 1: Elemental analysis of a conductive paste for an inner electrode In Figure 4 : (a) is a SEM image of the conductive paste for the inner electrode according to the preparation example, (b) is a Ti mapping image for the SEM image in (a), (c) is an Al mapping image for the SEM image in (a), (d) is a C mapping image for the SEM image in (a), and (e) is a Ni mapping image for the SEM image in (a).

[0157] Referring to Figure 4 , it was demonstrated that the conductive paste for the internal electrode according to the Preparation Example contains the constituent elements of Ti3AlC2 and the sacrificial metal Ni. Additionally, as a result of Ni mapping for measuring the content (wt%) of the conductive paste for the internal electrode, the conductive paste for the internal electrode according to the Preparation Example contains 4.6 wt% of Ni.

[0158] Evaluation Example 2: Micro XRD evaluation After curing each of the multilayer capacitors according to Example 1 and Comparative Example 2 by placing them in an epoxy resin mixture, the side surfaces of the capacitor body in the L-axis direction and the T-axis direction were polished to the 1 / 2 point of the capacitor body in the W-axis direction, thereby obtaining a cross-section in the L-axis direction and the T-axis direction at the center in the W-axis direction of the capacitor body to prepare a cross-section sample.

[0159] Micro-XRD analysis was performed on the cross-section sample within the range including the internal electrode and the interface between the internal electrode and the dielectric layer, and the results are shown respectively in Figure 5 and Figure 6 .

[0160] Furthermore, cross-section samples of the multilayer capacitors of Example 1 and Comparative Example 2 before sintering the dielectric green sheet laminate were prepared, and then micro-XRD analysis was performed, and the results are shown respectively in Figure 5 and Figure 6 .

[0161] Figure 5 Shows the XRD analysis results before and after sintering during the manufacture of the multilayer capacitor of Example 1. Figure 6 Shows the XRD analysis results before and after sintering during the manufacture of the multilayer capacitor of Comparative Example 2.

[0162] Referring to Figure 5 , in Example 1, the peaks of Ti3AlC2 were mainly confirmed before sintering, but after sintering, since a Ni oxide layer was formed and the Ni oxide layer could prevent the oxidation of Al, the peak of Al2O3 was very weak and could be confirmed.

[0163] Referring to Figure 6 , in Comparative Example 2, different from Example 1, after sintering, Al with a relatively weak bond in Ti3AlC2 was first oxidized to form an Al2O3 layer, and then Ti was oxidized to form a TiO2 layer on the Al2O3 layer, and the main peaks of Al2O3 and TiO2 were confirmed.

[0164] Evaluation Example 3: SEM image analysis In Figure 7In (a), a scanning electron microscope (SEM) image of a cross-section of a multilayer capacitor according to Example 1, in (b), a SEM-EDS analysis image by Ni mapping for the SEM image in (a), and in (c), a SEM-EDS analysis image by Ti mapping for the SEM image in (a).

[0165] Figure 8 is a graph showing the results of line profile analysis of Al, C, and O elements based on the positional changes of the inner electrode and the dielectric layer of the multilayer capacitor according to Example 1. Figure 9 is a graph showing the results of line profile analysis of Ti and Ni elements based on the positional changes of the inner electrode and the dielectric layer of the multilayer capacitor according to Example 1. In Figure 8 and Figure 9 In, in Figure 7 the region marked in (a) of

[0166] Referring to Figure 7 in the multilayer capacitor according to Example 1, a metal oxide layer including Ni is formed between the inner electrode and the dielectric layer.

[0167] Referring to Figure 8 in the multilayer capacitor according to Example 1, Al and C elements included in Ti3AlC2, which is a MAX phase compound, are confirmed in the inner electrode, and O element included in BaTiO3 is confirmed in the dielectric layer.

[0168] Referring to Figure 9 in the multilayer capacitor according to Example 1, a layer including Ni exists between the inner electrode and the dielectric layer.

[0169] Although the present invention has been described in connection with what are presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. On the contrary, the invention is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

[0170] <Description of Reference Numerals> 100: Multilayer capacitor 110: Capacitor body 111: Dielectric layer 112, 113: Covering area 121: First inner electrode 122: Second inner electrode 131: First outer electrode 132: Second outer electrode.

Claims

1. A multilayer capacitor comprising: a capacitor body comprising a dielectric layer, an inner electrode and a metal oxide layer, wherein the metal oxide layer is located between the dielectric layer and the inner electrode; as well as An outer electrode is disposed on an outer surface of the capacitor body, Wherein, the inner electrode includes a compound represented by Chemical Formula 1: [Chemical formula 1] M n+1 AX n Wherein, in Chemical Formula 1, M includes at least one selected from the group consisting of Ti, Zr, Hf, Sc, Cr, V, Nb, Ta, Mo and Mn, A includes at least one selected from the group consisting of Al, Ga, In, Tl, Si, Ge, Sn, Pb, Zn, Cd, P, As, S, Cu and Au, X includes C, N or a combination thereof, and n is an integer of 1 to 4.

2. The multilayer capacitor according to claim 1, wherein The compound represented by Chemical Formula 1 includes Ti2AlC, V2AlC, Cr2AlC, Nb2AlC, Ta2AlC, Zr2AlC, Ti2AlN, Ti3AlC2, V3AlC2, Ta3AlC2, Zr3AlC2, Ti4AlN3, V4AlC3, Nb4AlC3, Ta4AlC3, (Mo,V)4AlC3, Mo4VAlC4, Ti3SiC2, Ti4SiC3, Ti2CdC, Sc2InC, Sc2SnC, Ti2GaC, Ti2InC, Ti2TlC, V2GaC, Cr2GaC, Ti2GaN, Ti2InN, V2GaN, Cr2GaN, Ti2GeC, Ti2SnC, Ti2PbC, V2GeC, Cr2GeC , V2PC, V2AsC, Ti2SC, Zr2InC, Zr2TlC, Nb2GaC, Nb2InC, Mo2GaC, Zr2InN, Zr2TlN, Zr2SnC, Zr2PbC, Nb2SnC, Nb2PC, Nb2AsC, Zr2SC, Nb2SC, Hf2InC, Hf2TlC, Ta2GaC, Hf2SnC, Hf2PbC, Hf2SnN, Hf2SC, Ti2ZnC, Ti2ZnN, V2ZnC, Nb2CuC, Mn2GaC, Mo2AuC, Ti2AuN, Ti3GaC2, Ti3InC2, Ti3GeC2, Ti3SnC2, Ti3ZnC2, Ti4GaC3 and Ti4GeC3.

3. The multilayer capacitor according to claim 1, wherein The compound represented by Chemical Formula 1 includes a compound represented by Chemical Formula 1A: [Chemical Formula 1A] M n+1 A l X n Wherein, in Chemical Formula 1A, M includes at least one selected from the group consisting of Ti, Zr, Cr, V, Nb, Ta, Mo, Hf, Sc and Mn, A 1 Including Al or Si, X includes C, N or a combination thereof, and n is an integer of 1 to 4.

4. The multilayer capacitor according to claim 3, wherein The compound represented by Chemical Formula 1A includes at least one selected from the group consisting of Ti2AlC, V2AlC, Cr2AlC, Nb2AlC, Ta2AlC, Zr2AlC, Ti2AlN, Ti3AlC2, V3AlC2, Ta3AlC2, Zr3AlC2, Ti4AlN3, V4AlC3, Nb4AlC3, Ta4AlC3, (Mo,V)4AlC3, Mo4VAlC4, Ti3SiC2 and Ti4SiC3.

5. The multilayer capacitor according to claim 1, wherein The compound represented by Chemical Formula 1 includes a compound represented by Chemical Formula 1B: [Chemical formula 1B] M n+1 AlC n Wherein, in Chemical Formula 1B, M includes at least one selected from the group consisting of Ti, Zr, Cr, V, Nb, Ta, Mo, Hf, Sc, and Mn, and n is an integer of 1 to 4.

6. The multilayer capacitor according to claim 5, wherein The compound represented by Chemical Formula 1B includes at least one selected from the group consisting of Ti2AlC, V2AlC, Cr2AlC, Nb2AlC, Ta2AlC, and Zr2AlC.

7. The multilayer capacitor according to claim 1, wherein The inner electrode further comprises a conductive metal, and The conductive metal includes at least one selected from the group consisting of Ni, Mg, Al, Zr, Bi, Ru, Ir, Cu, Co, Zn, Ag, Pd, Au, Mn, Cr, Pt, Sn, W, Ti, Pb and their alloys.

8. The multilayer capacitor according to claim 1, wherein The metal oxide layer includes at least one selected from the group consisting of Ni oxide, Mg oxide, Al oxide, Zr oxide, Bi oxide, Ru oxide, Ir oxide, Cu oxide, Co oxide, Zn oxide, Ag oxide, Pd oxide, Au oxide, Mn oxide, Cr oxide, Pt oxide, Sn oxide, W oxide, Ti oxide and Pb oxide.

9. The multilayer capacitor according to claim 1, wherein The dielectric layer includes a barium titanate-based compound as a main component, and The barium titanate-based compound includes at least one selected from the group consisting of Ba m TiO3, (Ba 1-x Ca x ) m (Ti 1-y Zr y )O3, Ba m (Ti 1-x Zr x )O3, and (Ba 1-x Ca x ) m (Ti 1-y Sn y )O3, where, in Ba m TiO3, 0.995 ≤ m ≤ 1.010; in (Ba 1-x Ca x ) m (Ti 1-y Zr y )O3, 0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20; in Ba m (Ti 1-x Zr x )O3, 0.995 ≤ m ≤ 1.010, 0 < x ≤ 0.10; in (Ba 1-x Ca x ) m (Ti 1-y Sn y )O3, 0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.

20.

10. A multilayer capacitor comprising: a capacitor body comprising a dielectric layer, an inner electrode and a metal oxide layer, wherein the inner electrode comprises a conductive metal and the metal oxide layer is located between the dielectric layer and the inner electrode; as well as An outer electrode is disposed on an outer surface of the capacitor body, Wherein, the inner electrode further comprises a compound represented by Chemical Formula 1: [Chemical formula 1] M n+1 AX n Wherein, in Chemical Formula 1, M includes at least one selected from the group consisting of Ti, Zr, Hf, Sc, Cr, V, Nb, Ta, Mo and Mn, A includes at least one selected from the group consisting of Al, Ga, In, Tl, Si, Ge, Sn, Pb, Zn, Cd, P, As, S, Cu and Au, X includes C, N or a combination thereof, and n is an integer of 1 to 4.

11. The multilayer capacitor according to claim 10, wherein The compound represented by Chemical Formula 1 includes Ti2AlC, V2AlC, Cr2AlC, Nb2AlC, Ta2AlC, Zr2AlC, Ti2AlN, Ti3AlC2, V3AlC2, Ta3AlC2, Zr3AlC2, Ti4AlN3, V4AlC3, Nb4AlC3, Ta4AlC3, (Mo,V)4AlC3, Mo4VAlC4, Ti3SiC2, Ti4SiC3, Ti2CdC, Sc2InC, Sc2SnC, Ti2GaC, Ti2InC, Ti2TlC, V2GaC, Cr2GaC, Ti2GaN, Ti2InN, V2GaN, Cr2GaN, Ti2GeC, Ti2SnC, Ti2PbC, V2GeC, Cr2GeC , V2PC, V2AsC, Ti2SC, Zr2InC, Zr2TlC, Nb2GaC, Nb2InC, Mo2GaC, Zr2InN, Zr2TlN, Zr2SnC, Zr2PbC, Nb2SnC, Nb2PC, Nb2AsC, Zr2SC, Nb2SC, Hf2InC, Hf2TlC, Ta2GaC, Hf2SnC, Hf2PbC, Hf2SnN, Hf2SC, Ti2ZnC, Ti2ZnN, V2ZnC, Nb2CuC, Mn2GaC, Mo2AuC, Ti2AuN, Ti3GaC2, Ti3InC2, Ti3GeC2, Ti3SnC2, Ti3ZnC2, Ti4GaC3 and Ti4GeC3.

12. The multilayer capacitor according to claim 10, wherein The compound represented by Chemical Formula 1 includes a compound represented by Chemical Formula 1A: [Chemical Formula 1A] M n+1 A l X n Wherein, in Chemical Formula 1A, M includes at least one selected from the group consisting of Ti, Zr, Cr, V, Nb, Ta, Mo, Hf, Sc and Mn, A 1 Including Al or Si, X includes C, N or a combination thereof, and n is an integer of 1 to 4.

13. The multilayer capacitor according to claim 12, wherein The compound represented by Chemical Formula 1A includes at least one selected from the group consisting of Ti2AlC, V2AlC, Cr2AlC, Nb2AlC, Ta2AlC, Zr2AlC, Ti2AlN, Ti3AlC2, V3AlC2, Ta3AlC2, Zr3AlC2, Ti4AlN3, V4AlC3, Nb4AlC3, Ta4AlC3, (Mo,V)4AlC3, Mo4VAlC4, Ti3SiC2 and Ti4SiC3.

14. The multilayer capacitor according to claim 10, wherein The compound represented by Chemical Formula 1 includes a compound represented by Chemical Formula 1B: [Chemical formula 1B] M n+1 AlC n Wherein, in Chemical Formula 1B, M includes at least one selected from the group consisting of Ti, Zr, Cr, V, Nb, Ta, Mo, Hf, Sc, and Mn, and n is an integer of 1 to 4.

15. The multilayer capacitor according to claim 14, wherein The compound represented by Chemical Formula 1B includes at least one selected from the group consisting of Ti2AlC, V2AlC, Cr2AlC, Nb2AlC, Ta2AlC, and Zr2AlC.

16. The multilayer capacitor according to claim 10, wherein The external electrode includes a sintered metal layer contacting the capacitor body, a conductive resin layer disposed to cover the sintered metal layer, and a plated layer disposed to cover the conductive resin layer.

17. The multilayer capacitor according to claim 10, wherein The metal oxide layer includes at least one selected from the group consisting of Ni oxide, Mg oxide, Al oxide, Zr oxide, Bi oxide, Ru oxide, Ir oxide, Cu oxide, Co oxide, Zn oxide, Ag oxide, Pd oxide, Au oxide, Mn oxide, Cr oxide, Pt oxide, Sn oxide, W oxide, Ti oxide and Pb oxide.

18. The multilayer capacitor according to claim 10, wherein The dielectric layer includes a barium titanate-based compound as a main component, and The barium titanate-based compound includes at least one selected from the group consisting of Ba m TiO3, (Ba 1-x Ca x ) m (Ti 1-y Zr y )O3, Ba m (Ti 1-x Zr x )O3, and (Ba 1-x Ca x ) m (Ti 1-y Sn y )O3, where, in Ba m TiO3, 0.995 ≤ m ≤ 1.010; in (Ba 1-x Ca x ) m (Ti 1-y Zr y )O3, 0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20; in Ba m (Ti 1-x Zr x )O3, 0.995 ≤ m ≤ 1.010, 0 < x ≤ 0.10; in (Ba 1-x Ca x ) m (Ti 1-y Sn y )O3, 0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20.

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