Substrate processing apparatus

Abstract

The substrate processing apparatus according to an embodiment of the present invention comprises: a chamber having a processing space for processing a substrate therein; a substrate support unit disposed inside the chamber; a gas supply unit that supplies gas to the inside of the chamber; a plasma generation unit including a high-frequency power source for generating plasma in the processing space; the electromagnet unit is used for generating a magnetic field in the processing space; and a control unit. The electromagnet unit includes a coil module and a magnetic fluid reservoir disposed adjacent to the coil module. According to the substrate processing apparatus, heating of the coil module can be suppressed, and precise magnetic field control can be performed.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus that uses plasma to process a substrate. Background Art

[0002] For semiconductor element manufacturing, substrate processing apparatuses that use plasma are widely used. Plasma is generally used in a vapor deposition process for forming a predetermined film on a substrate such as a semiconductor wafer, an etching process for forming a predetermined pattern in a film formed on a substrate, and the like.

[0003] In a substrate processing process that uses plasma, uniform process performance according to the wafer area is required. For this purpose, of course, a uniform plasma generation ability in the processing space in the chamber is required, and an ability to precisely control the plasma density according to the position is also required. For this purpose, a technique of using an electromagnet to control the plasma density distribution in the chamber is known.

[0004] For example, in a general capacitively coupled plasma (CCP) etching system, there are not only differences in the etching rate between the center and the edge of the wafer, but also differences in the incident angle of ions on the wafer surface. If the incident angle of ions deviates from the vertical at the edge of the wafer, there is a problem that it is difficult to obtain a desired pattern shape. To solve such a problem, an electromagnet is disposed above the chamber, and a current is caused to flow through the coil of the electromagnet to generate a magnetic field, thereby enabling control of the density distribution of the plasma generated in the chamber.

[0005] For example, Patent Document 1 discloses a technique of disposing a plurality of annular electromagnets above a chamber for magnetic field control inside the chamber. The plurality of annular electromagnets have different radii from each other and are disposed at intervals in the radial direction, and although the plasma density distribution in the chamber can be controlled by adjusting the current flowing through the coil of each electromagnet.

[0006] However, in such a structure, there is a problem that if the current flowing through the coil is increased in order to obtain a desired magnetic field, the heat generation of the coil itself increases. For example, when a current of about 10 A is supplied to the coil in order to generate a magnetic field required for the process, the temperature of the electromagnet rises to about 150°C or higher, which becomes a reason for requiring a separate cooling structure.

[0007] When a magnetic material such as iron or ferrite is disposed adjacent to an electromagnet, the magnetoresistance decreases, and even if a relatively low current is supplied to the coil, a magnetic field of a desired level can be formed. However, there is a problem that the magnetic material is magnetized by the magnetic field formed by the electromagnet and affects the plasma distribution in subsequent processes. That is, due to the magnetization of the magnetic material, wafers that are sequentially loaded into the chamber and processed are processed under different magnetic field distributions from each other, and uniform processing may become difficult. To solve this problem, demagnetization of the magnetic material is required every time wafer processing is performed, so there is a problem that the process efficiency is greatly reduced.

[0008] In addition, the method of controlling the plasma density distribution in the chamber by adjusting the current flowing through the coil of the electromagnet has problems that not only precise control is difficult but also it is difficult to independently control the heat generation of the coil and the plasma density distribution.

[0009] Therefore, a technology is needed that can control the heat generation of the coil while obtaining a magnetic field of a desired magnitude, and that enables more precise magnetic field control without a demagnetization process.

[0010] (Patent Document 1) KR10-2434088B1 Summary of the Invention

[0011] An object of the present invention is to provide a substrate processing apparatus that can control the heat generation of a coil included in an electromagnet while forming a magnetic field of a desired magnitude in a substrate processing apparatus including an electromagnet.

[0012] In addition, an object of the present invention is to provide a substrate processing apparatus capable of precise magnetic field control.

[0013] In addition, an object of the present invention is to provide a substrate processing apparatus that can improve the substrate processing efficiency without a demagnetization process.

[0014] The substrate processing apparatus according to an embodiment of the present invention is characterized in that the substrate processing apparatus includes: a chamber that provides a processing space for substrate processing inside; a substrate support unit disposed inside the chamber; a gas supply unit that supplies gas to the inside of the chamber; a plasma generation unit that includes a high-frequency power source for generating plasma in the processing space; an electromagnet unit for generating a magnetic field in the processing space; and a control unit, and the electromagnet unit includes a coil module and a magnetic fluid reservoir disposed adjacent to the coil module.

[0015] In one embodiment of the present invention, the coil module may include a plurality of unit coils, and the magnetic fluid reservoir is disposed between the plurality of unit coils.

[0016] In an embodiment of the present invention, it may be that the magnetic fluid reservoir includes a plurality of unit magnetic fluid reservoirs, and each of the unit magnetic fluid reservoirs is formed in an annular shape or a cylindrical shape.

[0017] In an embodiment of the present invention, it may be that the plurality of unit coils include annular coils that are concentrically arranged with each other and have different diameters, and one or more unit magnetic fluid reservoirs are arranged between each of the plurality of unit coils.

[0018] It may be that the substrate processing apparatus according to an embodiment of the present invention further includes: a magnetic fluid supply source; and a magnetic fluid pipe for supplying magnetic fluid from the magnetic fluid supply source to the magnetic fluid reservoir.

[0019] In an embodiment of the present invention, it may be that the magnetic fluid reservoir includes a plurality of unit magnetic fluid reservoirs, and the magnetic fluid supply source is configured to be able to supply magnetic fluid to the plurality of unit magnetic fluid reservoirs.

[0020] In an embodiment of the present invention, it may be that the magnetic fluid reservoir includes a plurality of unit magnetic fluid reservoirs, and a plurality of magnetic fluid supply sources are provided and configured to be able to supply magnetic fluid to at least one of the plurality of unit magnetic fluid reservoirs respectively.

[0021] In an embodiment of the present invention, it may be that the plurality of magnetic fluid supply sources respectively supply magnetic fluids that are different from each other.

[0022] In an embodiment of the present invention, it may be that the magnetic fluid reservoir includes a plurality of unit magnetic fluid reservoirs, and the plurality of unit magnetic fluid reservoirs are communicated with each other by connecting pipes.

[0023] In an embodiment of the present invention, it may be that the coil module includes a first coil and a second coil, and a plurality of unit magnetic fluid reservoirs are arranged between the first coil and the second coil. At this time, it may be that the plurality of unit magnetic fluid reservoirs are stacked in the vertical direction, or the plurality of magnetic fluid reservoirs are divided and arranged in the circumferential direction.

[0024] It may be that the substrate processing apparatus according to an embodiment of the present invention further includes: a recovery pipe for recovering magnetic fluid from the magnetic fluid reservoir; a magnetic fluid tank for storing the recovered magnetic fluid; and a replenishment pipe for transferring magnetic fluid from the magnetic fluid tank to the magnetic fluid supply source.

[0025] A substrate processing apparatus according to another embodiment of the present invention is characterized in that the substrate processing apparatus includes: a chamber that provides a processing space for substrate processing inside; a substrate support unit disposed inside the chamber; a gas supply unit that supplies gas to the inside of the chamber; a plasma generation unit that includes a high-frequency power source for generating plasma in the processing space; an electromagnet unit for generating a magnetic field in the processing space; and a control unit, wherein the electromagnet unit includes a coil module, a first magnetic fluid reservoir, and a second magnetic fluid reservoir disposed adjacent to the coil module, and the substrate processing apparatus further includes: a first magnetic fluid supply source for selectively supplying magnetic fluid to the first magnetic fluid reservoir and the second magnetic fluid reservoir; a first pipe connecting the first magnetic fluid supply source and the first magnetic fluid reservoir; a first branch pipe branching from the first pipe and connecting to the second magnetic fluid reservoir; and a first magnetic fluid flow control member capable of adjusting the supply path of the magnetic fluid to supply magnetic fluid to the first magnetic fluid reservoir through the first pipe or to supply magnetic fluid to the second magnetic fluid reservoir through the first branch pipe.

[0026] In an embodiment of the present invention, it may be that the substrate processing apparatus further includes: a second magnetic fluid supply source for selectively supplying magnetic fluid to the first magnetic fluid reservoir and the second magnetic fluid reservoir; a second pipe connecting the second magnetic fluid supply source and the second magnetic fluid reservoir; a second branch pipe branching from the second pipe and connecting to the first magnetic fluid reservoir; and a second magnetic fluid flow control member capable of adjusting the supply path of the magnetic fluid to supply magnetic fluid to the second magnetic fluid reservoir through the second pipe or to supply magnetic fluid to the first magnetic fluid reservoir through the second branch pipe.

[0027] In an embodiment of the present invention, it may be that the first magnetic fluid supply source supplies a first magnetic fluid, the second magnetic fluid supply source supplies a second magnetic fluid, and the first magnetic fluid and the second magnetic fluid are different magnetic fluids from each other.

[0028] In an embodiment of the present invention, it may be that through the first magnetic fluid flow control member and the second magnetic fluid flow control member, a selected one of the first magnetic fluid and the second magnetic fluid is supplied to the first magnetic fluid reservoir and the second magnetic fluid reservoir, respectively.

[0029] A substrate processing apparatus according to yet another embodiment of the present invention is characterized in that the substrate processing apparatus includes: a chamber that provides a processing space for substrate processing inside; a substrate support unit disposed inside the chamber; a gas supply unit that supplies gas to the inside of the chamber; a plasma generation unit that includes a high-frequency power source for generating plasma in the processing space; an electromagnet unit for generating a magnetic field in the processing space; and a control unit. The electromagnet unit includes a coil module and a magnetic fluid reservoir disposed adjacent to the coil module. The control unit controls to execute the following processes: a first process of loading a substrate into the chamber and disposing it on the substrate support unit; a second process of supplying magnetic fluid to the magnetic fluid reservoir; a third process of applying current to the coil module, controlling the plasma generation unit to generate plasma in the processing space to perform plasma processing on the substrate; and a fourth process of recovering magnetic fluid from the magnetic fluid reservoir if the plasma processing is completed.

[0030] According to an embodiment of the present invention, a magnetic fluid reservoir for supplying magnetic fluid is disposed between electromagnets, thereby having the effect of being able to suppress the heat generation of the coil while forming a magnetic field of a desired magnitude.

[0031] In addition, according to an embodiment of the present invention, there is an effect that precise magnetic field control can be performed through the configuration of the magnetic fluid reservoir and the selective supply of magnetic fluid.

[0032] In addition, according to an embodiment of the present invention, after the substrate processing process is completed, magnetic fluid is discharged from the magnetic fluid reservoir, so that a demagnetization process is not required, and there is an effect that the substrate processing efficiency can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 is a cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.

[0034] Figure 2 And Figure 3 is a diagram for explaining the structure of an electromagnet unit according to an embodiment of the present invention.

[0035] Figure 4 is a diagram for explaining the effect of the magnetic fluid reservoir.

[0036] Figures 5 to 8 is a diagram for explaining the configuration structure of the magnetic fluid reservoir according to an embodiment of the present invention.

[0037] Figures 9A to 9D is a diagram for explaining the magnetic fluid supply structure according to an embodiment of the present invention.

[0038] Figure 10It is a diagram for explaining a magnetic fluid discharge structure according to an embodiment of the present invention.

[0039] Figure 11 It is a flowchart of a substrate processing method according to an embodiment of the present invention.

[0040] (Description of reference numerals)

[0041] 10: Substrate processing apparatus

[0042] 100: Chamber

[0043] 200: Substrate support unit

[0044] 300: Gas supply unit

[0045] 400: Electromagnet unit

[0046] 410: Coil module

[0047] 420: Magnetic fluid reservoir

[0048] 450: Magnetic fluid supply source

[0049] 460: Magnetic fluid pipeline

[0050] 470: Magnetic fluid flow control member

[0051] 480: Magnetic fluid tank

[0052] 490: Supplementary pipeline

[0053] 500: Plasma generation unit

[0054] 600: Control unit Detailed description of the invention

[0055] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those of ordinary skill in the art to which the present invention pertains can easily implement it. However, the present invention can be implemented in various different ways and is not limited to the embodiments described herein.

[0056] To clearly illustrate the present invention, parts irrelevant to the description are omitted, and the same or similar components are labeled with the same reference numerals throughout the specification.

[0057] In addition, in multiple embodiments, for components having the same structure, the same reference numerals are used to describe only the representative embodiments, and only the structures different from the representative embodiments are described in the remaining other embodiments.

[0058] Throughout the specification, when a certain part is described as "including" a certain component, unless there is a special contrary description, it means that other components may also be included rather than excluding other components.

[0059] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. Terms such as those defined in commonly used dictionaries shall be interpreted as having a meaning consistent with the meaning in the relevant technical context, and shall not be construed in an idealized or overly formal sense unless explicitly defined in this application.

[0060] Figure 1 It is a cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.

[0061] Refer to Figure 1 , a substrate processing apparatus 10 according to an embodiment of the present invention includes a chamber 100, a substrate support unit 200, a gas supply unit 300, an electromagnet unit 400, a plasma generation unit 500, and a control unit 600.

[0062] The chamber 100 provides a processing space s for performing a substrate processing process. The chamber 100 provides the processing space s through a chamber side wall 111, a chamber bottom surface 112, and a chamber lid 113. The chamber 100 may be formed of a metal such as aluminum. The substrate processing process may be a process of performing plasma processing on a substrate W. For example, it may be a plasma etching process. The substrate processing process may be performed in a reduced-pressure environment. To this end, an exhaust port 102 may be formed in the chamber 100. The exhaust port 102 may be formed in the chamber bottom surface 112. The exhaust port 102 is connected to a vacuum pump P through an exhaust line 104 and an exhaust valve 103. The internal processing space s of the chamber 100 can be adjusted to a predetermined pressure by operating the vacuum pump P and adjusting the exhaust valve 103.

[0063] An opening 106 may be formed in the chamber side wall 111. The opening 106 functions as a passage for the substrate W to enter and exit the interior. A door 108 is provided at the opening 106. The door 108 has a function of opening and closing the opening 106 of the chamber 100, so that the processing space s of the chamber 100 can be hermetically sealed in a closed state, and the substrate W can be transported from the transfer space outside the chamber 100 to the processing space s or from the processing space s to the transfer space outside the chamber 100 in an open state. The door 108 may be a gate valve.

[0064] Inside the chamber 100, a substrate support unit 200 for supporting the substrate W is provided. The substrate support unit 200 may include an electrostatic chuck 220 for adsorbing and fixing the substrate W and a base plate 210 for supporting the electrostatic chuck 220. The electrostatic chuck 220 and the base plate 210 may be adhered through a welding layer 230, and the welding layer may be formed of silicone or the like.

[0065] The electrostatic chuck 220 may be formed of a dielectric disk such as alumina, and a chuck electrode 222 for generating an electrostatic force may be provided inside. When a voltage is applied to the chuck electrode 222 from a power supply (not shown), an electrostatic force is generated and the substrate W is adsorbed and fixed to the electrostatic chuck 220. A heater 224 for adjusting the temperature of the substrate W may be provided in the electrostatic chuck 220.

[0066] The base plate 210 may be located below the electrostatic chuck 220 and formed of a metal material such as aluminum. The base plate 210 may form a refrigerant flow path 212 inside for the cooling fluid to flow through, and function as a cooling member for cooling the substrate W. The refrigerant flow path 212 may be provided as a circulation path for the cooling fluid to circulate.

[0067] In addition, a heat-conducting gas flow path 214 may be formed in the substrate support unit 200 to supply a heat-conducting gas from a heat-conducting gas supply source 216 to the back surface of the substrate W. The heat-conducting gas may facilitate heat conduction between the substrate W and the base plate 210 and promote cooling of the substrate W. Helium (He) may be used as the heat-conducting gas.

[0068] The substrate support unit 200 may include a ring member 240 surrounding the electrostatic chuck 220. A step may be formed on the upper part of the ring member 240 to support the outer peripheral surface of the substrate W. The ring member 240 may be formed of a ceramic material and may be a focusing ring.

[0069] The gas supply unit 300 supplies the gas required for processing the substrate W and the like to the chamber 100. The gas supply unit 300 may include a gas supply source 310, a gas supply line 312, a gas supply valve 314, a gas nozzle 318, and a shower head 320. The gas supply line 312 connects the gas supply source 310 and the gas nozzle 318, and a gas supply valve 314 for opening and closing its passage or adjusting the flow rate of the fluid flowing through its passage is provided in the gas supply line 312. The gas ejected from the gas nozzle 318 is supplied to the space between the chamber lid 113 and the shower head 320, and is supplied to the processing space s through the gas ejection holes 322 formed in the shower head 320.

[0070] In Figure 1In the figure, only one gas supply source 310, one gas supply line 312, and one gas supply valve 314 are shown, but the gas supply source 310 of the present invention may include multiple gas supply sources and multiple gas supply valves capable of independently controlling the supply of each gas so as to supply multiple gases to the chamber 100. The multiple gases may include process gases for substrate processing, such as etching gases, and may include inert gases for purification, etc.

[0071] The plasma generation unit 500 may include high-frequency power supplies 510 and 520 for supplying high-frequency power to generate plasma in the processing space s. The high-frequency power supplies 510 and 520 may provide high-frequency power in the range of several hundred kHz to several hundred MHz.

[0072] The high-frequency power supply 510 may supply high-frequency power to the upper electrode, and the showerhead 320 may function as the upper electrode. The high-frequency power supply 520 may supply high-frequency power to the lower electrode, and the substrate support unit 200 may function as the lower electrode. Figure 1 In the figure, the high-frequency power supplies 510 and 520 are shown as being connected to the upper electrode and the lower electrode respectively, but it should be understood that this is illustrative. In order to generate plasma in the processing space s, the upper electrode may be grounded and only high-frequency power may be applied to the lower electrode from the lower power supply 520. Or, high-frequency power may be applied to the upper electrode from the upper power supply 510 and the lower electrode may be grounded. Additionally, selectively, high-frequency power may be applied to both the upper electrode and the lower electrode. The lower power supply 520 may also use multiple high-frequency power supplies with different frequencies.

[0073] The high-frequency power supplies 510 and 520 may apply power continuously or in a pulse mode.

[0074] The electromagnet unit 400 is a structure disposed above the chamber 100 for generating a magnetic field in the processing space s, and includes a housing 405, a coil module 410, a magnetic fluid reservoir 420, and an electromagnet excitation power supply 430. When the electromagnet excitation power supply 430 supplies current to the coil module 410, a magnetic field is generated in the processing space s while current flows through the coil. If the current supplied to the coil module is controlled, the magnetic field generated in the processing space s changes, and thus the density distribution of the plasma generated in the processing space s can be controlled. The electromagnet excitation power supply 430 may be a DC power supply that supplies direct current to the coil module.

[0075] The control unit 600 can control the overall operation of the substrate processing apparatus 10. As an example, the control unit 600 can control the operations of the gas supply unit 300, the plasma generation unit 500, and the electromagnet unit 400 to perform plasma processing on the substrate W. For example, the control unit 600 can control the gas supply unit 300 to supply a predetermined etching gas to the processing space s, and control the high-frequency power supplies 510 and 520 to generate plasma in the processing space s, thereby etching the substrate W. At this time, the electromagnet unit 400 is controlled to generate a magnetic field in the processing space s, so that a uniform etching can be formed across the entire area of the substrate by appropriately adjusting the density distribution of the plasma.

[0076] Figure 2 and Figure 3 FIG. is a diagram for explaining the structure of the electromagnet unit 400 according to an embodiment of the present invention. Figure 2 is a cross-sectional view for explaining the arrangement structure of the coil module 410 and the magnetic fluid reservoir 420, Figure 3 is a view from above Figure 2 of the A-A cross-section.

[0077] Referring to Figure 2 and Figure 3 , the electromagnet unit 400 according to an embodiment of the present invention includes a coil module 410. The coil module 410 may include a plurality of unit coils 411 and 412. Each unit coil 411 and 412 may be a circular coil with a different diameter, and may be arranged concentrically with each other as shown in Figure 3 . For example, the coil module 410 may include a circular first coil 411 and a circular second coil 412 that is concentrically arranged with the first coil 411 and has a larger diameter. It may be that the outer diameter of the first coil 411 is smaller than the inner diameter of the second coil 412, and when viewed from above, the first coil 411 is arranged inside the inner diameter of the second coil 412. Figure 2 and Figure 3 Although the coil module 410 is illustrated as being composed of 2 unit coils in and, the present invention is not limited thereto. The coil module 410 may be composed of 2 or more unit coils.

[0078] Each unit coil 411 and 412 may be provided in the form of a coil wound around a bobbin. The bobbin may be formed in a circular shape and made of a material that can transmit a magnetic field. For example, the bobbin may be made of aluminum.

[0079] A magnetic fluid reservoir 420 may be arranged between each unit coil 411 and 412. The magnetic fluid reservoir 420 may include a plurality of unit magnetic fluid reservoirs 421 and 422. Each unit magnetic fluid reservoir 421 and 422 may be formed in a circular or cylindrical shape with a different diameter, and may be as shown in Figure 3They are concentrically arranged with each other as shown. For example, the magnetic fluid reservoir 420 may include a cylindrical first magnetic fluid reservoir 421 arranged at intervals on the inner wall of the annular first coil 411, and an annular second magnetic fluid reservoir 422 that is concentrically arranged with the first magnetic fluid reservoir 421 and is arranged between the first coil 411 and the second coil 421. Figure 2 and Figure 3 In the figure, the magnetic fluid reservoir 420 is shown to be composed of two unit magnetic fluid reservoirs. However, the present invention is not limited to this. Depending on the structure of the coil module 410, the number thereof may include two or more unit magnetic fluid reservoirs. That is, the magnetic fluid reservoir 420 may be composed of the same number or more unit magnetic fluid reservoirs as the number of unit coils constituting the coil module 410.

[0080] The magnetic fluid reservoir 420 provides a storage space for filling magnetic fluid. Referring together to Figure 1 , the magnetic fluid reservoir 420 receives magnetic fluid from the magnetic fluid supply source 450 through the magnetic fluid pipeline 460. The magnetic fluid that can be supplied from the magnetic fluid supply source 450 is filled into the magnetic fluid reservoir 420, thereby forming a structure in which magnetic fluid is arranged between the unit coils 411 and 412.

[0081] The magnetic fluid pipeline 460 may be respectively connected to a plurality of unit magnetic fluid reservoirs 421 and 422. For example, it may be that a first pipeline 461 is connected to the first magnetic fluid reservoir 421, and a second pipeline 462 is connected to the second magnetic fluid reservoir 422. The first pipeline 461 and the second pipeline 462 may be respectively connected to the magnetic fluid supply source 450 to supply magnetic fluid to the unit magnetic fluid reservoirs 421 and 422.

[0082] A magnetic fluid flow control member 470 may be provided in the magnetic fluid pipeline 460 to regulate the flow of magnetic fluid. The magnetic fluid flow control member 470 may be a valve. For example, it may be that a first valve 471 is provided in the first pipeline 461, and a second valve 472 is provided in the second pipeline 462. The magnetic fluid flow control member 470 may be opened to supply magnetic fluid to the magnetic fluid reservoir 420, and may be closed when the magnetic fluid supply is completed. The magnetic fluid flow control member 470 may be an on-off valve, or may be a flow regulating valve.

[0083] The magnetic fluid pipeline 460 may be used to supply magnetic fluid from the magnetic fluid supply source 450 to the magnetic fluid reservoir 420, and may also be used to recover magnetic fluid from the magnetic fluid reservoir 420 to the magnetic fluid supply source 450. That is, the magnetic fluid pipeline 460 may be used for both magnetic fluid supply and recovery.

[0084] In an embodiment of the present invention, a magnetic fluid means a fluid substance in which fine magnetic powder is dispersed in a solvent, and is not limited to a specific substance. The magnetic powder may be a powder of a magnetic substance including at least any one element of silicon (Si), cobalt (Co), and iron (Fe). The magnetic powder may be a powder of a substance having a magnetic permeability in the range of 10 to 10,000 H / m. The solvent for dispersing the magnetic powder is not particularly limited as long as it is a liquid substance capable of uniformly dispersing the magnetic powder. The solvent may be water or an organic solvent. When a magnetic field is present, the magnetic powder in the magnetic fluid is oriented along the magnetic field and magnetized, and when the magnetic field is removed, it is randomly dispersed again and demagnetized.

[0085] As Figure 2 shown, the magnetic fluid reservoir 420 may be formed at a height capable of cutting off between the unit coils 411 and 412.

[0086] Figure 4 is a diagram for explaining the effect of the magnetic fluid reservoir, showing the magnetic flux density based on the position. The position r is the position in the radial direction with the center of the electromagnet unit 400 as 0. Referring to Figure 4 , it can be confirmed that, compared with the case where only the coil is arranged without the magnetic fluid reservoir, the same level of magnetic flux density can be obtained with a small current in a state where the magnetic fluid is supplied to the magnetic fluid reservoir. For example, in the case where the magnetic fluid is supplied, even if only 8 A of current is supplied, the magnetic flux density is approximately the same as that in the case where 12 A of current is supplied without the magnetic fluid. If the current is increased to 9 A, the magnetic flux density increases significantly compared with the case where 12 A of current is supplied without the magnetic fluid. Thus, in the case where the magnetic fluid reservoir is arranged between the coils and the magnetic fluid is supplied as in the embodiment of the present invention, a large magnetic field can be obtained with a small current, and thus the heat generation of the coil can also be minimized.

[0087] Figures 5 to 8 is a diagram for explaining various configuration structures of the magnetic fluid reservoir according to an embodiment of the present invention.

[0088] Figure 5 is a structure in which both the unit magnetic fluid reservoirs 421 and 422 are connected. That is, the first magnetic fluid reservoir 421 and the second magnetic fluid reservoir 422 communicate with each other through the connecting pipe C. In such a structure, the magnetic fluid supply source 450 and the magnetic fluid reservoir 420 may be connected by a single magnetic fluid pipe 460. That is, the magnetic fluid supplied from the magnetic fluid supply source 450 to the magnetic fluid reservoir 420 through the magnetic fluid pipe 460 may fill both the first magnetic fluid reservoir 421 and the second magnetic fluid reservoir 422 through the connecting pipe C. In addition, after the substrate processing process is completed, the magnetic fluid may be recovered to the magnetic fluid supply source 450 through the magnetic fluid pipe 460. According toFigure 5 The structure can simplify the magnetic fluid pipeline structure as compared with the case where the magnetic fluid reservoir 420 is composed of a plurality of unit magnetic fluid reservoirs 421 and 422 separated from each other.

[0089] Figure 6 is compared with Figure 2 an example in which a larger number of unit magnetic fluid reservoirs 422, 423, and 424 are arranged between the first coil 411 and the second coil 412 as compared with the arrangement structure. In the case of arranging such a larger number of unit magnetic fluid reservoirs, the magnetic field can be controlled more precisely.

[0090] For example, a second magnetic fluid reservoir 422, a third magnetic fluid reservoir 423, and a fourth magnetic fluid reservoir 424 can be arranged between the first coil 411 and the second coil 412. The second magnetic fluid reservoir 422, the third magnetic fluid reservoir 423, and the fourth magnetic fluid reservoir 424 can be formed into rings with different diameters from each other. It can be that the second magnetic fluid reservoir 422 is concentrically arranged with the cylindrical first magnetic fluid reservoir 421 and arranged between the first coil 411 and the second coil 412, the third magnetic fluid reservoir 423 is formed into a ring with a larger diameter than the second magnetic fluid reservoir 422 and arranged between the second magnetic fluid reservoir 422 and the second coil 412, and the fourth magnetic fluid reservoir 424 is formed into a ring with a larger diameter than the third magnetic fluid reservoir 423 and arranged between the third magnetic fluid reservoir 423 and the second coil 412.

[0091] The first magnetic fluid reservoir 421, the second magnetic fluid reservoir 422, the third magnetic fluid reservoir 423, and the fourth magnetic fluid reservoir 424 can be individually connected through a magnetic fluid supply source 450 and a magnetic fluid pipeline 460. A magnetic fluid flow control member 470 capable of independently controlling the supply of magnetic fluid can be provided in each magnetic fluid pipeline 460. The magnetic fluid flow control member 470 can include an on-off valve capable of opening and closing each magnetic fluid pipeline 460.

[0092] As Figure 6 exemplarily shown, magnetic fluid can be supplied to the first magnetic fluid reservoir 421, the second magnetic fluid reservoir 422, and the fourth magnetic fluid reservoir 424, and no magnetic fluid is supplied to the third magnetic fluid reservoir 423. That is, magnetic fluid can be selectively supplied to a plurality of unit magnetic fluid reservoirs. With such an arrangement structure, the magnetic field can be precisely controlled according to the process.

[0093] Figure 7 is compared with Figure 6A structure in which the second magnetic fluid reservoir 422, the third magnetic fluid reservoir 423, and the fourth magnetic fluid reservoir 424 are stacked vertically due to differences. That is, the second magnetic fluid reservoir 422, the third magnetic fluid reservoir 423, and the fourth magnetic fluid reservoir 424 can be configured as annular shapes with the same diameter and are arranged between the first coil 411 and the second coil 412. Compared with Figure 6 the same, magnetic fluid can be selectively supplied to multiple unit magnetic fluid reservoirs. As Figure 7 exemplarily shown, magnetic fluid can be supplied to the first magnetic fluid reservoir 421, the third magnetic fluid reservoir 423, and the fourth magnetic fluid reservoir 424, and magnetic fluid is not supplied to the second magnetic fluid reservoir 422. According to such an arrangement, there is an effect of adjusting the amount of magnetic fluid supplied to the magnetic fluid reservoir 420 and thus being able to precisely control the magnetic field. Additionally, as Figure 7 such, magnetic fluid is not supplied to the second magnetic fluid reservoir 422 that is closest to the processing space s, so that the same effect as when the magnetic fluid reservoir 420 is moved up and down in the height direction can be obtained. Therefore, the effect of precisely controlling the magnetic field can be obtained.

[0094] Figure 8 This is an example configuration in which the magnetic fluid reservoir 420 is divided into multiple unit magnetic fluid reservoirs in the circumferential direction. Magnetic fluid can be selectively supplied or not supplied to the multiple unit magnetic fluid reservoirs divided in the circumferential direction. According to such a structure, the magnetic field can be precisely adjusted in the circumferential direction.

[0095] Figures 5 to 8 This is exemplary, and it should be understood that various configuration structures not shown are included within the scope of the present invention. For example, Figures 5 to 8 the configuration structures can be applied together. That is, the unit magnetic fluid reservoir 420 can be configured to be divided into multiple in the radial direction, height direction, and / or circumferential direction and magnetic fluid can be selectively supplied.

[0096] Figures 9A to 9D This is a diagram for explaining the magnetic fluid supply structure according to an embodiment of the present invention. In Figures 9A to 9D this embodiment, multiple magnetic fluid supply sources 450 are provided. For example, the magnetic fluid supply source 450 can include a first magnetic fluid supply source 451 and a second magnetic fluid supply source 452.

[0097] Although not particularly limited, the first magnetic fluid supply source 451 and the second magnetic fluid supply source 452 may supply different types of magnetic fluids from each other. For example, it may be that the first magnetic fluid supply source 451 supplies a first magnetic fluid, the second magnetic fluid supply source 452 supplies a second magnetic fluid, and the first magnetic fluid and the second magnetic fluid are magnetic fluids having different magnetic permeabilities from each other. The first magnetic fluid and the second magnetic fluid may include powders of different magnetic substances from each other, or powders of the same magnetic substance may be dispersed at different densities from each other.

[0098] Figure 9A This is an example in which the first magnetic fluid supply source 451 is connected to the first magnetic fluid reservoir 421 through the first pipe 461 and the second magnetic fluid supply source 452 is connected to the second magnetic fluid reservoir 422 through the second pipe 462. In such a supply structure, a magnetic field can be formed in a state where the first magnetic fluid is supplied to the first magnetic fluid reservoir 421 and the second magnetic fluid is supplied to the second magnetic fluid reservoir 422 to perform a substrate processing process. Therefore, the distribution of the magnetic field can be controlled differently from the case of supplying the same magnetic fluid.

[0099] Figures 9B to 9D This is an example configured to be able to selectively supply the first magnetic fluid and the second magnetic fluid to the first magnetic fluid reservoir 421 and the second magnetic fluid reservoir 422.

[0100] A first branch pipe 463 may be branched from the first pipe 461 connecting the first magnetic fluid supply source 451 and the first magnetic fluid reservoir 421 and connected to the second magnetic fluid reservoir 422. A first valve 471 may be provided as a magnetic fluid flow control member 470 at the connection point of the first pipe 461 and the first branch pipe 463. The first valve 471 may selectively supply the first magnetic fluid supplied from the first magnetic fluid supply source 451 to the first pipe 461 and the first branch pipe 463. That is, it may be possible to supply the first magnetic fluid supplied from the first magnetic fluid supply source 451 only to the first magnetic fluid reservoir 421, or only to the second magnetic fluid reservoir 422, or to both the first magnetic fluid reservoir 421 and the second magnetic fluid reservoir 422. The first valve 471 may be configured as a collection of multiple valves.

[0101] In addition, a second branch pipe 464 can be branched from a second pipe 462 connecting a second magnetic fluid supply source 452 and a second magnetic fluid reservoir 422 and connected to a first magnetic fluid reservoir 421. A second valve 472 can be provided at the connection of the second pipe 462 and the second branch pipe 464 as a magnetic fluid flow control member 470. The second valve 472 can selectively supply the second magnetic fluid supplied from the second magnetic fluid supply source 452 to the second pipe 462 and the second branch pipe 464. That is, the second magnetic fluid supplied from the second magnetic fluid supply source 452 can be made to be supplied only to the second magnetic fluid reservoir 422, or only to the first magnetic fluid reservoir 421, or to both the first magnetic fluid reservoir 421 and the second magnetic fluid reservoir 422. The second valve 472 can be configured as a set of multiple valves.

[0102] According to such a structure, different magnetic fluids are selectively supplied to multiple unit magnetic fluid reservoirs 420, thereby having the effect of being able to more precisely control the magnetic field. For example, as Figure 9B shown, the first magnetic fluid can be supplied to the first magnetic fluid reservoir 421 and the second magnetic fluid can be supplied to the second magnetic fluid reservoir 422. Conversely, as Figure 9C shown, the second magnetic fluid can be supplied to the first magnetic fluid reservoir 421 and the first magnetic fluid can be supplied to the second magnetic fluid reservoir 422. In addition, as Figure 9D shown, the second magnetic fluid can be supplied to both the first magnetic fluid reservoir 421 and the second magnetic fluid reservoir 422. Although not shown, the first valves 471 can also be all opened and the second valves 472 can be all closed, so that the first magnetic fluid is supplied to both the first magnetic fluid reservoir 421 and the second magnetic fluid reservoir 422.

[0103] Figure 10 FIG. is a diagram for explaining a magnetic fluid discharge structure according to an embodiment of the present invention. In Figure 10 this embodiment, a magnetic fluid supply pipe and a magnetic fluid recovery pipe are separately provided.

[0104] Referring to Figure 10 , the magnetic fluid is supplied from a magnetic fluid supply source 450 to a magnetic fluid reservoir 420 through a magnetic fluid pipe 460. The substrate processing process can be performed in a state where the magnetic fluid reservoir 420 is filled with the magnetic fluid. If the substrate processing process is completed, the magnetic fluid is recovered from the magnetic fluid reservoir 420 through a recovery pipe 482. A recovery valve 484 is provided in the recovery pipe 482.

[0105] Although the magnetic fluid recovered through the recovery pipe 482 can also be recovered to the magnetic fluid supply source 450, it can also be sent to, for example, as Figure 10Recovery is performed by the magnetic fluid tank 480 provided separately as shown. The magnetic fluid recovered into the magnetic fluid tank 480 can be transferred to the magnetic fluid supply source 450 through the replenishment pipe 490. A pump P can be provided in the replenishment pipe 490 to provide a driving force for the movement of the magnetic fluid.

[0106] According to such a magnetic fluid discharge structure, there is an effect of being able to supply the magnetic fluid storage 420 with a magnetic fluid in a consistently uniform state. That is, compared to the case where both the supply and recovery of the magnetic fluid are performed through the magnetic fluid pipe 460, if the recovery pipe 482 is provided separately, there is an effect of homogenization while the magnetic fluid circulates.

[0107] Figure 11 It is a flowchart of a substrate processing method according to an embodiment of the present invention.

[0108] Step S10 is a step of loading the substrate W. The substrate W is loaded into the chamber 100 and disposed on the substrate support unit 200.

[0109] Step S20 is a magnetic fluid supply step. The control unit 600 controls the magnetic fluid supply source 450 to supply the magnetic fluid to the magnetic fluid storage 420 through the magnetic fluid pipe 460.

[0110] Step S30 is a step of performing plasma processing on the substrate with a current applied to the electromagnet coil. The control unit 600 controls the gas supply unit 300 and the plasma generation unit 500 to generate plasma in the processing space s. At this time, in order to precisely control the plasma density distribution, while controlling the electromagnet unit 400, plasma processing is performed on the substrate W. Specifically, a current is supplied to the coil module 410 to generate a magnetic field, and the plasma density distribution is adjusted by the generated magnetic field. At this time, since the magnetic fluid storage 420 is filled with the magnetic fluid, a relatively small current supplied to the coil module 410 can also generate the desired magnetic field. Therefore, the heat generation of the coil module 410 can be minimized.

[0111] If the plasma processing of the substrate W is completed, step S40 of recovering the magnetic fluid is performed. Although the magnetic fluid is magnetized while the magnetic powder is oriented along the magnetic field in the state where the magnetic fluid storage 420 is filled with the magnetic fluid, when the magnetic fluid is recovered, it is randomly dispersed again, so demagnetization occurs. Therefore, if the magnetic fluid is supplied to the magnetic fluid storage 420 again for subsequent substrate processing, the substrate processing process can be performed under the same conditions as the previous substrate processing.

[0112] This embodiment and the accompanying drawings in this specification only clearly show a part of the technical concept included in the present invention. It is obvious that variations and specific embodiments that can be easily derived by those skilled in the art within the scope of the technical concept included in the specification and drawings of the present invention are all included in the scope of the rights of the present invention.

[0113] Therefore, the concept of the present invention should not be limited to the described embodiments. Not only the appended claims, but all concepts equivalent or equivalently deformed to the claims belong to the scope of the concept of the present invention.

Claims

1. A substrate processing device, comprising: a chamber providing a processing space therein for substrate processing; A substrate supporting unit is disposed inside the chamber; a gas supply unit for supplying gas to the interior of the chamber; a plasma generating unit including a high frequency power source for generating plasma in the processing space; An electromagnet unit, used to generate a magnetic field in the processing space; and Control Department, The electromagnet unit includes a coil module and a magnetic fluid reservoir arranged adjacent to the coil module.

2. The substrate processing apparatus according to claim 1, wherein: The coil module includes a plurality of unit coils. The magnetic fluid reservoir is disposed between the plurality of unit coils.

3. The substrate processing apparatus according to claim 2, wherein: The magnetic fluid reservoir includes a plurality of unit magnetic fluid reservoirs, each of which is formed in a ring shape or a cylindrical shape.

4. The substrate processing apparatus according to claim 3, wherein: The plurality of unit coils include annular coils that are concentrically arranged and have different diameters. One or more unit magnetic fluid reservoirs are arranged between each of the plurality of unit coils.

5. The substrate processing apparatus according to claim 1, wherein: The substrate processing device further comprises: a magnetic fluid supply; and The magnetic fluid pipe is used to supply the magnetic fluid from the magnetic fluid supply source to the magnetic fluid reservoir.

6. The substrate processing apparatus according to claim 5, wherein: The magnetic fluid reservoir comprises a plurality of unit magnetic fluid reservoirs, The magnetic fluid supply source is configured to be able to supply the magnetic fluid to the plurality of unit magnetic fluid reservoirs.

7. The substrate processing apparatus according to claim 5, wherein: The magnetic fluid reservoir comprises a plurality of unit magnetic fluid reservoirs, The magnetic fluid supply source is provided in plurality and is configured to be able to supply the magnetic fluid to at least one of the plurality of unit magnetic fluid reservoirs, respectively.

8. The substrate processing apparatus according to claim 7, wherein: The plurality of magnetic fluid supply sources respectively supply magnetic fluids different from each other.

9. The substrate processing apparatus according to claim 1, wherein: The magnetic fluid reservoir comprises a plurality of unit magnetic fluid reservoirs, The plurality of unit magnetic fluid reservoirs are connected to each other by connecting pipes.

10. The substrate processing apparatus according to claim 1, wherein: The coil module includes a first coil and a second coil. A plurality of unit magnetic fluid reservoirs are arranged between the first coil and the second coil.

11. The substrate processing apparatus according to claim 10, wherein: The plurality of unit magnetic fluid reservoirs are stacked in a vertical direction.

12. The substrate processing apparatus according to claim 10, wherein: The plurality of magnetic fluid reservoirs are arranged in a divided manner in the circumferential direction.

13. The substrate processing apparatus according to claim 5, wherein: The substrate processing device further comprises: a recovery pipe for recovering the magnetic fluid from the magnetic fluid reservoir; a magnetic fluid tank for storing the recovered magnetic fluid; and A replenishing pipe is used to transfer magnetic fluid from the magnetic fluid tank to the magnetic fluid supply source.

14. A substrate processing device, comprising: a chamber providing a processing space therein for substrate processing; A substrate supporting unit is disposed inside the chamber; a gas supply unit for supplying gas to the interior of the chamber; a plasma generating unit including a high frequency power source for generating plasma in the processing space; An electromagnet unit, used to generate a magnetic field in the processing space; and Control Department, The electromagnet unit includes a coil module and a first magnetic fluid reservoir and a second magnetic fluid reservoir disposed adjacent to the coil module. The substrate processing device further comprises: a first magnetic fluid supply source, for selectively supplying the magnetic fluid to the first magnetic fluid reservoir and the second magnetic fluid reservoir; a first pipeline connecting the first magnetic fluid supply source and the first magnetic fluid reservoir; a first branch pipe branched from the first pipe and connected to the second magnetic fluid reservoir; The first magnetic fluid flow control member is capable of adjusting the supply path of the magnetic fluid so as to supply the magnetic fluid to the first magnetic fluid reservoir through the first pipe or to supply the magnetic fluid to the second magnetic fluid reservoir through the first branch pipe.

15. The substrate processing apparatus according to claim 14, wherein: The substrate processing device further comprises: a second magnetic fluid supply source, for selectively supplying the magnetic fluid to the first magnetic fluid reservoir and the second magnetic fluid reservoir; a second pipeline connecting the second magnetic fluid supply source and the second magnetic fluid reservoir; a second branch pipe branched from the second pipe and connected to the first magnetic fluid reservoir; The second magnetic fluid flow control member is capable of adjusting the supply path of the magnetic fluid so as to supply the magnetic fluid to the second magnetic fluid reservoir through the second pipe or to supply the magnetic fluid to the first magnetic fluid reservoir through the second branch pipe.

16. The substrate processing apparatus according to claim 15, wherein: The first magnetic fluid supply source supplies a first magnetic fluid, The second magnetic fluid supply source supplies a second magnetic fluid, The first magnetic fluid and the second magnetic fluid are different magnetic fluids from each other.

17. The substrate processing apparatus according to claim 16, wherein: A magnetic fluid selected from a first magnetic fluid and a second magnetic fluid is supplied to the first magnetic fluid reservoir and the second magnetic fluid reservoir respectively through the first magnetic fluid flow control member and the second magnetic fluid flow control member.

18. A substrate processing device, comprising: a chamber providing a processing space therein for substrate processing; A substrate supporting unit is disposed inside the chamber; a gas supply unit for supplying gas to the interior of the chamber; a plasma generating unit including a high frequency power source for generating plasma in the processing space; An electromagnet unit, used to generate a magnetic field in the processing space; and Control Department, The electromagnet unit includes a coil module and a magnetic fluid reservoir disposed adjacent to the coil module. The control unit controls to execute the following processes: In a first process, a substrate is moved into the chamber and arranged on the substrate supporting unit; A second process is to supply the magnetic fluid to the magnetic fluid reservoir; A third process is to apply current to the coil module, control the plasma generating unit to generate plasma in the processing space to perform plasma processing on the substrate; as well as In a fourth process, when the plasma treatment is completed, the magnetic fluid is recovered from the magnetic fluid reservoir.

19. The substrate processing apparatus according to claim 18, wherein: The coil module includes a plurality of unit coils. The magnetic fluid reservoir is disposed between the plurality of unit coils.

20. The substrate processing apparatus according to claim 19, wherein: The plurality of unit coils include annular coils that are concentrically arranged and have different diameters. One or more unit magnetic fluid reservoirs are arranged between each of the plurality of unit coils.

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