Calibration Method for Intake Device in Semiconductor Processing Equipment, Semiconductor Processing Equipment

Abstract

The present disclosure provides a calibration method for an intake device in a semiconductor processing apparatus and a semiconductor processing apparatus. The calibration method includes: conveying a gas through a reference path exhaust device with a flow controller, obtaining a reference value of a related gas supply parameter under a preset gas supply condition, where both the gas supply condition and the gas supply parameter involve a chamber pressure and an opening degree of an exhaust butterfly valve; conveying a gas through a selected calibration intake device, obtaining a calibrated value of the related gas supply parameter; calculating a gas flow rate deviation based on the reference value of the gas supply parameter and the calibrated value of the gas supply parameter, and adjusting a gas pressure regulating valve of the selected calibration intake device so that the gas flow rate deviation meets the requirements, thereby completing the calibration of the calibration intake device. The calibration method has a simple process. Through the calibration of the gas flow rate deviation, the gas flow rate of the intake device configured with a regulating valve is made equivalent to the gas flow rate of the intake device configured with a flow controller, thereby realizing the equivalence of the gas pressure regulating valve to the flow controller, reducing the usage amount of the flow controller, and effectively reducing the cost.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and particularly to a calibration method for an air intake device in a semiconductor processing apparatus, a semiconductor processing apparatus, a control device, and a computer-readable storage medium. Background Art

[0002] In semiconductor manufacturing processes, semiconductor processing apparatuses are often utilized to perform process treatments on semiconductor wafers placed in the process chambers of the semiconductor processing apparatuses. Such semiconductor processing apparatuses can be, for example, semiconductor thin film deposition apparatuses, plasma ashing apparatuses, plasma etching apparatuses, etc. Taking a semiconductor thin film deposition apparatus as an example, through the semiconductor thin film deposition apparatus, thin film deposition can be performed on a semiconductor wafer. Thin film deposition techniques generally include PVD (Physical Vapor Deposition) and CVD (Chemical Vapor Deposition).

[0003] Generally, in the process of performing the above-mentioned processes on a semiconductor wafer using a semiconductor processing apparatus, the semiconductor wafer to be processed (e.g., a wafer) is placed in a sealed process chamber, and reaction gases required for the process reaction are provided to enter the process chamber to participate in the reaction. Among them, a flow controller is needed to control the flow rate of the reaction gas.

[0004] Taking a mass flow controller (MFC) as an example, a mass flow controller is a device used to accurately measure and control the mass flow rate of a gas or a liquid. It not only has the function of a mass flow meter, but more importantly, it can automatically control the gas flow rate, and can maintain the flow rate at a set value even when the system pressure fluctuates or the ambient temperature changes. Therefore, mass flow controllers can be widely applied in semiconductor processing apparatuses.

[0005] In some cases, multiple types of reaction gases are required, and a semiconductor process chamber is configured with a multi-channel air intake device, and a mass flow controller is configured on each air intake device to control the flow rate of the reaction gas on the corresponding air intake device. Mass flow controllers are costly, and the higher the control accuracy, the higher the price. However, in practical applications, for some gases with a fixed flow rate determined in a process and insensitive to gas deviation amounts, using mass flow controllers for the gas flow rates in all air intake devices will consume a large amount of cost. Summary of the Invention

[0006] In view of the shortcomings of the related technologies described above, an object of the present disclosure is to provide a calibration method for an intake device in a semiconductor processing apparatus, a semiconductor processing apparatus, a control device, and a computer-readable storage medium, so as to solve various problems in the related technologies.

[0007] The first aspect of the present disclosure provides a calibration method for an intake device in a semiconductor processing apparatus, including the following steps:

[0008] Configure a multi-channel intake device and an exhaust device: The multi-channel intake device includes a reference intake device and at least one calibrated intake device. The reference intake device includes a reference intake pipeline, a gas source, a flow controller, and a reference intake valve assembly. Each calibrated intake device includes a calibrated intake pipeline, a gas source, a gas pressure regulator, and a calibrated intake valve assembly. The exhaust device includes an exhaust pipeline and an exhaust pump and an exhaust valve assembly provided on the exhaust pipeline. The exhaust valve assembly includes an exhaust butterfly valve; in the initial state, the multi-channel intake device is all closed and the exhaust device is open;

[0009] Supply gas by the reference intake device: In the initial state, open the reference intake valve assembly in the reference intake device, and use the flow controller to control the gas flow to a reference flow value, so that the gas source in the reference intake device supplies gas to the process chamber through the reference intake pipeline. Under the preset gas supply conditions, obtain a reference value of the gas supply parameter associated with the gas supply conditions; wherein, the gas supply conditions relate to the chamber pressure of the process chamber and the opening degree of the exhaust butterfly valve in the exhaust device, and the gas supply parameter associated with the gas supply conditions is one of the chamber pressure of the process chamber and the opening degree of the exhaust butterfly valve in the exhaust device;

[0010] Supply gas by the calibrated intake device: In the initial state, open the calibrated intake valve assembly in the selected calibrated intake device, and let the gas source in this calibrated intake device supply gas to the process chamber through the calibrated intake pipeline. Under the preset gas supply conditions, obtain a calibrated value of the gas supply parameter associated with the gas supply conditions;

[0011] Calculate the gas flow deviation: According to the obtained reference value of the gas supply parameter and the calibrated value of the gas supply parameter, calculate the deviation of the two gas supply parameters, and use the deviation of the gas supply parameter as the gas flow deviation;

[0012] Adjust the gas pressure regulator: Compare the gas flow deviation with the deviation threshold range. When the gas flow deviation exceeds the deviation threshold range, adjust the gas pressure regulator in this calibrated intake device;

[0013] Repeat the above steps of supplying gas by the calibrated intake device, obtaining the gas flow deviation, and adjusting the gas pressure regulator until the gas flow deviation is within the deviation threshold range, and complete the calibration of this calibrated intake device.

[0014] In certain examples of the first aspect, the air supply condition is to limit the opening degree of the exhaust butterfly valve in the exhaust device to a preset opening degree value, and the air supply parameter is the chamber pressure of the process chamber; the steps of calculating the air flow deviation include:

[0015] Limit the opening degree of the exhaust butterfly valve in the exhaust device to a preset opening degree value. In the reference air intake device, according to the reference flow value set by the flow controller, supply gas to the process chamber through the reference intake pipeline, and obtain the reference value of the chamber pressure in the process chamber;

[0016] Keep the opening degree of the exhaust butterfly valve in the exhaust device at the preset opening degree value. In one selected calibration air intake device, supply gas to the process chamber through the calibration intake pipeline, and obtain the calibrated value of the chamber pressure in the process chamber; and

[0017] According to the obtained reference value of the chamber pressure and the calibrated value of the chamber pressure, calculate the chamber pressure deviation as the air flow deviation; wherein, the chamber pressure deviation is the ratio of the difference between the calibrated value of the chamber pressure and the reference value of the chamber pressure to the reference value of the chamber pressure.

[0018] In certain examples of the first aspect, the steps of obtaining the reference value of the chamber pressure in the process chamber include: keep the opening degree of the exhaust butterfly valve in the exhaust device at the preset opening degree value, supply gas to the process chamber through the reference intake pipeline, detect the chamber pressure of the process chamber in real time, and calculate the average reference value of the chamber pressure in the process chamber within the first gas supply time; the steps of obtaining the calibrated value of the chamber pressure in the process chamber include: keep the opening degree of the exhaust butterfly valve in the exhaust device at the preset opening degree value, supply gas to the process chamber through the calibration intake pipeline, detect the chamber pressure of the process chamber in real time, and calculate the average calibrated value of the chamber pressure in the process chamber within the first gas supply time.

[0019] In certain examples of the first aspect, the air supply condition is to limit the chamber pressure of the process chamber to a preset pressure value, and the air supply parameter is the opening degree of the exhaust butterfly valve in the exhaust device, wherein the opening degree of the exhaust butterfly valve is dynamically correlated with the chamber pressure of the process chamber; the steps of calculating the air flow deviation include:

[0020] In the reference air intake device, according to the reference flow value set by the flow controller, supply gas to the process chamber through the reference intake pipeline, stabilize the chamber pressure of the process chamber at the preset pressure value, and obtain the reference value of the opening degree of the exhaust butterfly valve in the exhaust device;

[0021] In one selected reference air intake device, supply gas to the process chamber through the calibration intake pipeline, stabilize the chamber pressure of the process chamber at the preset pressure value, and obtain the calibrated value of the opening degree of the exhaust butterfly valve in the exhaust device;

[0022] According to the obtained opening reference value and the opening calibration value, calculate the opening deviation as the gas flow deviation; wherein, the opening deviation is the ratio of the difference between the opening calibration value and the opening reference value to the opening reference value.

[0023] In some examples of the first aspect, the step of obtaining the opening reference value of the exhaust butterfly valve in the exhaust device includes: delivering gas to the process chamber through the reference intake pipeline, stabilizing the chamber pressure of the process chamber at a preset pressure value, detecting the opening of the exhaust butterfly valve in real time, and calculating the average opening reference value of the exhaust butterfly valve within the second gas delivery time; the step of obtaining the chamber pressure calibration value in the process chamber includes: delivering gas to the process chamber through the calibration intake pipeline, stabilizing the chamber pressure of the process chamber at a preset pressure value, detecting the opening of the exhaust butterfly valve in real time, and calculating the average opening calibration value of the exhaust butterfly valve within the second gas delivery time.

[0024] In some examples of the first aspect, during the process of delivering gas to the process chamber through the reference intake pipeline or during the process of delivering gas to the process chamber through the calibration intake pipeline, the temperature in the process chamber remains stable.

[0025] In some examples of the first aspect, when the gas flow deviation exceeds the deviation threshold range, adjusting the gas pressure regulating valve in this path of the calibration intake device includes:

[0026] When the gas flow deviation exceeds the deviation threshold range, if it is determined that the gas flow rate of the gas delivered in the calibration intake device is less than the gas flow rate of the gas delivered in the reference intake device, then increase the opening degree of the gas pressure regulating valve to increase the gas flow rate; and

[0027] When the gas flow deviation exceeds the deviation threshold range, if it is determined that the gas flow rate of the gas delivered in the calibration intake device is greater than the gas flow rate of the gas delivered in the reference intake device, then decrease the opening degree of the gas pressure regulating valve to decrease the gas flow rate.

[0028] The second aspect of the present disclosure provides a semiconductor processing device, including: a process chamber, a multi-path intake device, and an exhaust device. The multi-path intake device includes one path of reference intake device and at least one path of calibration intake device. The reference intake device includes a reference intake pipeline, a gas source, a flow controller, and a reference intake valve assembly. Each path of calibration intake device includes a calibration intake pipeline, a gas source, a gas pressure regulating valve, and a calibration intake valve assembly. The exhaust device includes an exhaust pipeline and an exhaust pump and an exhaust valve assembly provided on the exhaust pipeline; wherein, the gas pressure regulating valve in the calibration intake device is implemented by using the calibration method of the intake device in the semiconductor processing device as described above.

[0029] A third aspect of the present disclosure provides a control device, including: a processor; a memory storing a calibration program for an intake device; wherein, when the calibration program for the intake device is run by the processor, it executes the calibration method for the intake device as described above.

[0030] A fourth aspect of the present disclosure provides a computer-readable storage medium, on which a calibration program for an intake device is stored. When the calibration program for the intake device is run by the processor, it executes the calibration method for the intake device as described above.

[0031] As described above, the embodiments of the present disclosure provide a calibration method for an intake device in a semiconductor processing device, a semiconductor processing device, a control device, and a computer-readable storage medium, which can be used to calibrate the intake device so that an ordinary gas pressure regulating valve can equivalently replace a flow controller. In the calibration method for the intake device, first, gas is transported through a reference path exhaust device with a flow controller to obtain a reference value of the gas supply parameter associated with the gas supply condition under a preset gas supply condition. Both the gas supply condition and the gas supply parameter involve the chamber pressure of the process chamber and the opening degree of the exhaust butterfly valve in the exhaust device; then, gas is transported to a selected calibrated intake device to obtain a calibrated value of the gas supply parameter associated with the gas supply condition when the gas supply condition is met; the gas supply parameter deviation is calculated as the gas flow deviation based on the reference value of the gas supply parameter and the calibrated value of the gas supply parameter, and the gas pressure regulating valve in this calibrated intake device is gradually adjusted to change the gas flow until the gas flow deviation meets the deviation threshold range, thereby completing the calibration of this calibrated intake device. Compared with the related art, the calibration method for the intake device provided by the present disclosure has a simple process. Through the calibration of the gas flow deviation, the gas flow of the intake device equipped with a regulating valve can be equivalent to the gas flow of the intake device equipped with a flow controller, so as to realize the equivalent replacement of the gas pressure regulating valve with a flow controller, reduce the usage amount of the flow controller, and effectively reduce the cost. Description of the Drawings

[0032] Figure 1 It shows a schematic structural diagram of a semiconductor processing device to which the calibration method for the intake device of the present disclosure is applied in an embodiment.

[0033] Figure 2 It shows a schematic structural diagram of a semiconductor processing device to which the calibration method for the intake device of the present disclosure is applied in another embodiment.

[0034] Figure 3 It shows a schematic flow diagram of the calibration method for the intake device in a semiconductor processing device provided by the present disclosure in an embodiment.

[0035] Figure 4 It shows a schematic block diagram of the control device provided by the present disclosure in an embodiment. Detailed Embodiments

[0036] The following describes the embodiments of the present disclosure through specific examples, and those skilled in the art can easily understand other advantages and effects of the present disclosure from the information disclosed herein. The present disclosure can also be implemented or applied through other different specific embodiments, and various details in the present disclosure can also be modified or changed according to different viewpoints and applications without departing from the spirit of the present disclosure. It should be noted that, without conflict, the embodiments and features in the embodiments of the present disclosure can be combined with each other.

[0037] The following takes the accompanying drawings as a reference and details the embodiments of the present disclosure so that those skilled in the art to which the present disclosure pertains can easily implement it. The present disclosure can be embodied in many different forms and is not limited to the embodiments described herein.

[0038] In the description of the present disclosure, the reference to terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials, or characteristics represented in connection with the embodiment or example are included in at least one embodiment or example of the present disclosure. Moreover, the specific features, structures, materials, or characteristics represented can be combined in a suitable manner in any one or a group of embodiments or examples. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples represented in the present disclosure and the features of different embodiments or examples.

[0039] In addition, the terms "first" and "second" are only used for illustrative purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" can explicitly or implicitly include at least one of such features. In the description of the present disclosure, the meaning of "a group" is two or more, unless otherwise specifically defined.

[0040] To clearly illustrate the present disclosure, devices irrelevant to the description are omitted, and the same or similar components throughout the specification are given the same reference numerals.

[0041] Throughout the specification, when it is said that a device is "connected" to another device, this includes not only the case of "direct connection", but also the case of "indirect connection" with other elements placed therebetween. In addition, when it is said that a certain device "includes" a certain component, unless there is a particularly contrary record, it does not exclude other components, but means that other components can also be included.

[0042] Although in some examples the terms first, second, etc. are used herein to denote various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first interface and a second interface, etc. are indicated. Further, as used herein, the singular forms "a", "an" and "the" are also intended to include the plural forms unless the context clearly dictates otherwise. It should be further understood that the terms "comprising", "including" indicate the presence of the stated features, steps, operations, elements, modules, items, kinds, and / or groups, but do not preclude the presence, occurrence or addition of one or more other features, steps, operations, elements, modules, items, kinds, and / or groups. The terms "or" and "and / or" used herein are to be construed as inclusive, or meaning any one or any combination. Thus, "A, B or C" or "A, B and / or C" means "any of the following: A; B; C; A and B; A and C; B and C; A, B and C". An exception to this definition occurs only when the combination of elements, functions, steps or operations are mutually exclusive in some manner.

[0043] The technical terms used herein are only for referring to specific embodiments and are not intended to limit the present disclosure. The singular forms used herein also include the plural forms as long as the statements do not clearly indicate the contrary meaning. The meaning of "including" used in the specification is to embody specific features, regions, integers, steps, operations, elements and / or components, and does not exclude the existence or addition of other features, regions, integers, steps, operations, elements and / or components.

[0044] Although not defined differently, including the technical terms and scientific terms used herein, all terms have the same meaning as generally understood by those skilled in the art to which the present disclosure pertains. Terms defined in commonly used dictionaries are additionally interpreted to have meanings consistent with the relevant technical literature and the currently presented information, and should not be over-interpreted as ideal or overly formulaic meanings as long as they are not defined.

[0045] In the process of semiconductor wafer manufacturing, there are strict requirements for the accuracy of pressure control and airtightness in the process chamber to ensure the product quality and yield of the semiconductor wafer manufacturing process. For this reason, it is necessary to use a flow controller to control the flow rate of the reaction gas. For example, the flow controller can adopt a mass flow controller (MFC) to accurately measure and control the mass flow rate of the reaction gas. However, the cost of the mass flow controller is relatively high. When a multi-inlet device needs to be configured in the semiconductor process chamber due to process requirements, and a mass flow controller is configured for each inlet device, the overall cost will increase.

[0046] An embodiment of the present disclosure provides a calibration method for an intake device in a semiconductor processing apparatus, which is used to calibrate the intake device equipped with a gas pressure regulator by performing flow equivalence processing on the intake device equipped with a gas pressure regulator compared to the intake device equipped with a flow controller, so as to equivalently convert the gas pressure regulator into a flow controller, reduce the usage amount of the flow controller, and effectively reduce costs.

[0047] Please refer to Figure 1 , which shows a schematic structural diagram of a semiconductor processing apparatus to which the calibration method of the intake device of the present disclosure is applied in an embodiment.

[0048] As Figure 1 shown, the semiconductor processing apparatus in this embodiment may include: a process chamber 10, a wafer carrier 11, a multi-channel intake device, and an exhaust device.

[0049] The semiconductor processing apparatus may be, for example, a semiconductor thin film deposition apparatus, a plasma ashing apparatus, a plasma etching apparatus, etc. Taking the semiconductor thin film deposition apparatus as an example, through the semiconductor thin film deposition apparatus, a thin film can be deposited on a semiconductor wafer (such as a wafer) in the process chamber. Thin film deposition techniques generally include PVD (Physical Vapor Deposition) and CVD (Chemical Vapor Deposition).

[0050] The process chamber 10 includes a sealed chamber with side walls, and a wafer carrier 11 is disposed in the central region of the sealed chamber.

[0051] The process chamber is connected to a multi-channel intake device. In some embodiments, the top of the process chamber is connected to the multi-channel intake device. In some embodiments, the side of the process chamber is connected to the multi-channel intake device. In some embodiments, both the top and the side of the process chamber are connected to the multi-channel intake device.

[0052] An inlet / outlet may be formed on the side wall of the process chamber 10, and relevant workpieces can be transferred through the inlet / outlet. The workpieces include, but are not limited to, wafers, etc. Generally, a first slit valve is provided at the inlet / outlet, and the first slit valve can move in the up / down direction or the left / right direction relative to the inlet / outlet.

[0053] The wafer carrier 11 is disposed in the process chamber 10 and is used to carry a semiconductor wafer 100, and the semiconductor wafer 100 may be, for example, a wafer. In some embodiments, a thin film deposition process is only performed on one semiconductor wafer 100 in the process chamber 10 at a time. Therefore, the wafer carrier 11 is located at the central position of the process chamber 10.

[0054] In some embodiments, an adsorption structure for adsorbing the semiconductor wafer 100 is further provided on the wafer carrier 11. Exemplarily, the adsorption structure may include, for example, an adsorption groove and an adsorption pump.

[0055] In some embodiments, a heating device (not shown in the figures) may be provided below the wafer carrier 11 for heating the loaded semiconductor wafer 100 to a desired temperature. In some embodiments, the side wall surface and the top cover surface of the process chamber 10 may be coated with a high-reflection film or surface polished to reflect the thermal radiation heated by the heating device back to the surface of the wafer carrier 11 and the semiconductor wafer 100 carried thereon.

[0056] In some embodiments, the side wall surface and the top cover surface of the process chamber 10 may be coated with a high-reflection film or surface polished to reflect the thermal radiation heated by the heating device back to the surface of the wafer carrier 11 and the semiconductor wafer 100 carried thereon.

[0057] In some embodiments, the wafer carrier 11 may be associated with a moving component. By using the moving component, the wafer carrier 11 can be driven to move. Exemplarily, the moving component may be, for example, a lifting component, which can drive the wafer carrier 11 and the semiconductor wafer 100 carried thereon to perform a lifting movement.

[0058] In some embodiments, the wafer carrier 11 may be associated with a rotating device. The rotating device may include a rotating member and a rotating power mechanism. The rotating member may be hermetically arranged with the wafer carrier 11 and the process chamber 10. The rotating member and the associated wafer carrier 11 and the semiconductor wafer 100 carried thereon can be driven to perform a reciprocating rotation through the selected power mechanism, which can make the deposition of the thin film on the semiconductor wafer 100 more uniform.

[0059] The exhaust device is used to extract the reaction gas in the process chamber. As Figure 1 shown, the exhaust device includes an exhaust pipeline connected to the process chamber 10 and an exhaust valve assembly 13 and an exhaust pump 14 provided on the exhaust pipeline.

[0060] In some embodiments, the exhaust valve assembly includes an exhaust valve.

[0061] In some embodiments, the exhaust valve assembly includes a combination of an exhaust valve and a throttle valve. Exemplarily, the exhaust valve may be, for example, an ordinary exhaust valve. Exemplarily, the exhaust valve may be, for example, a combination of a fast exhaust valve and a slow exhaust valve. Among them, the slow exhaust valve is used to establish an initial vacuum environment, and the fast exhaust valve is used to more quickly discharge the remaining gas to achieve a lower vacuum degree. The throttle valve may be, for example, a butterfly valve, which can achieve an opening degree of 0% to 100%.

[0062] When depositing a thin film on a semiconductor wafer, the semiconductor wafer can be fed into a process chamber and placed on a wafer carrier table, the semiconductor wafer is heated and kept warm, and corresponding reaction gases are introduced into the process chamber through an air inlet device to deposit a required thin film on the surface of the semiconductor wafer.

[0063] Generally, when introducing reaction gases into the process chamber through the air inlet device, it is necessary to control the flow rate of the reaction gases according to process requirements.

[0064] In the related art, a flow controller is configured on each air inlet device to control the flow rate of the reaction gases. The flow controller can be, for example, a mass flow controller (MFC). Through the mass flow controller, accurate measurement and control of the reaction gases can be achieved. However, the mass flow controller has a high cost. And in some wafer manufacturing processes, there are certain processes that only require gases with a fixed flow rate and are not sensitive to gas deviation amounts, and there is no need to accurately measure the gas flow rate and the flow control is not frequent (for example, the semiconductor process is simple and the reaction gas is single, and only one adjustment is required). At this time, using a mass flow controller seems like overkill.

[0065] Therefore, in the semiconductor processing equipment provided in the embodiments of the present disclosure, the air inlet device is improved.

[0066] As Figure 1 shown, a top cover is provided at the upper part of the process chamber 10, and a nozzle or nozzle assembly 101 facing the wafer carrier table 11 is provided on the top cover for spraying reaction gases onto the wafer carrier table 11.

[0067] The nozzle or nozzle assembly 101 is connected to a multi-way air inlet device for delivering reaction gases into the process chamber 10.

[0068] The multi-way air inlet device includes one reference air inlet device and at least one calibration air inlet device.

[0069] The reference air inlet device includes a reference air inlet pipeline, a gas source, a flow controller, and a reference air inlet valve assembly. In some embodiments, the reference air inlet valve assembly includes a reference air inlet pipeline valve, which can be arranged on the reference air inlet pipeline (for example, between the gas source and the flow controller, or after the flow controller). In some embodiments, the reference air inlet valve assembly includes a gas source valve and a controller valve. The gas source valve is arranged after the gas source, and the controller valve is arranged after the flow controller. In as Figure 1In the illustrated embodiment, the reference intake device includes a reference intake pipeline, a gas source GS0, a mass flow controller MFC, a gas source valve FV0 located after the gas source GS0 and before the mass flow controller MFC, and a controller valve V0 located after the mass flow controller MFC. The gases that the gas source can provide include, but are not limited to, silane (SiH4), methane (CH4), ammonia (NH3), oxygen (O2), nitrogen (N2), etc.

[0070] Each calibration intake device includes a calibration intake pipeline, a gas source, a gas pressure regulator, and a calibration intake valve assembly. In some embodiments, the calibration intake valve assembly includes a calibration intake pipeline valve that can be disposed on the calibration intake pipeline (for example, disposed between the gas source and the gas pressure regulator, or disposed after the gas pressure regulator). As in Figure 1 the illustrated embodiment, the first calibration intake device includes a first calibration intake pipeline, a gas source GS1, a first gas pressure regulator RV1, and a first calibration intake pipeline valve V1 located after the first gas pressure regulator RV1; the second calibration intake device includes a second calibration intake pipeline, a gas source GS2, a second gas pressure regulator RV2, and a second calibration intake pipeline valve V2 located after the second gas pressure regulator RV2;...; the nth calibration intake device includes an nth calibration intake pipeline, a gas source GSn, an nth gas pressure regulator RVn, and an nth calibration intake pipeline valve Vn located after the nth gas pressure regulator RVn. Among them, the gases that the gas source can provide include, but are not limited to, silane (SiH4), methane (CH4), ammonia (NH3), oxygen (O2), nitrogen (N2), etc.

[0071] In addition, in some embodiments, the multi-channel intake device may further be provided with a total intake valve, that is, the reference intake device and at least one calibration intake device share the total intake valve, that is, a total intake valve is provided between the reference intake device and at least one calibration intake device and the process chamber. Please refer to Figure 2 , which shows a schematic structural diagram of a semiconductor processing device to which the calibration method of the intake device of the present disclosure is applied in another embodiment. As in Figure 2 shown, the reference intake device and at least one calibration intake device share a total intake valve Vin, that is, a total intake valve Vin is provided between the reference intake device and at least one calibration intake device and the process cavity 10.

[0072] In addition, the semiconductor processing device further includes a pressure detection device. In some embodiments, as in Figure 1 or Figure 2 described, the pressure detection device 15 is a pressure gauge associated with the process cavity 10, and the pressure inside the process cavity 15 can be detected in real time through the pressure gauge.

[0073] In the embodiments of the present disclosure, a common gas pressure regulator is used to replace or partially replace a high-precision flow controller, which can reduce the equipment cost to a certain extent. At the same time, the equivalent effect of precise control can be achieved by fine-tuning the gas pressure regulator in real time, ensuring the overall performance of the system and meeting the requirements of semiconductor manufacturing processes.

[0074] In order to enable the calibrated intake air device equipped with a gas pressure regulator to have the same or substantially the same flow control function as the reference intake air device equipped with a flow controller to meet the requirements of the wafer manufacturing process, it is necessary to calibrate the gas pressure regulator in each calibrated intake air device so that it has the same or substantially the same function as the flow controller.

[0075] Therefore, the present disclosure provides a calibration method for an intake air device in a semiconductor processing apparatus. The semiconductor processing apparatus includes a plurality of intake air devices, the plurality of intake air devices including one reference intake air device and at least one calibrated intake air device. The reference intake air device is configured with a flow controller, and each calibrated intake air device is configured with a gas pressure regulator. The calibration method of the intake air device sets relevant conditions to make the gas supply state of a calibrated intake air device to be calibrated approach the gas supply state of the reference intake air device, and gradually fine-tune the gas pressure regulator, so that the gas flow rate generated by the gas pressure regulator in the calibrated intake air device is the same as or substantially the same as the gas flow rate controlled by the reference intake air device, thereby achieving the equivalence of the calibrated intake air device and the reference intake air device in gas flow control.

[0076] Please refer to Figure 3 , which shows a schematic flow chart of the calibration method for an intake air device in a semiconductor processing apparatus provided by the present disclosure in an embodiment.

[0077] Step S301, configure a plurality of intake air devices and an exhaust device.

[0078] The plurality of intake air devices include one reference intake air device and at least one calibrated intake air device. Among them, the reference intake air device includes a reference intake air pipeline, a gas source, a flow controller, and a reference intake air valve assembly. Each calibrated intake air device includes a calibrated intake air pipeline, a gas source, a gas pressure regulator, and a calibrated intake air valve assembly. The exhaust device includes an exhaust pipeline and an exhaust pump and an exhaust valve assembly provided on the exhaust pipeline. The exhaust valve assembly includes an exhaust butterfly valve.

[0079] In the initial state, the plurality of intake air devices are all closed and the exhaust device is open. That is, the reference intake air valve assembly in the reference intake air device is closed, the calibrated intake air valve assemblies in each calibrated intake air device are all closed, and the exhaust valve assembly in the exhaust device is open.

[0080] In step S303, in the initial state, open the reference intake valve assembly in the reference intake device, control the gas flow rate to a reference flow rate value by using a flow controller, and supply gas to the process chamber through the reference intake pipeline. Under the preset gas supply conditions, obtain a reference value of the gas supply parameter associated with the gas supply conditions.

[0081] In step S303, the gas supply conditions relate to the chamber pressure of the process chamber and the opening degree of the exhaust butterfly valve in the exhaust device, and the gas supply parameter associated with the gas supply conditions is one of the chamber pressure of the process chamber and the opening degree of the exhaust butterfly valve in the exhaust device.

[0082] In some embodiments, the gas supply condition is to limit the opening degree of the exhaust butterfly valve in the exhaust device to a preset opening degree value, and the gas supply parameter is the chamber pressure of the process chamber. Thus, in step S303, that is, supply gas from the gas source in the reference intake device to the process chamber through the reference intake pipeline at the reference flow rate value controlled by the flow controller, and under the gas supply conditions that satisfy the opening degree of the exhaust butterfly valve in the exhaust device being limited to the preset opening degree value, obtain a reference value of the chamber pressure of the process chamber associated with the gas supply conditions.

[0083] Regarding the exhaust butterfly valve, according to the actual process requirements or calibration requirements, open the exhaust butterfly valve in the exhaust valve assembly to a set opening degree value.

[0084] In some embodiments, the opening degree value of the exhaust butterfly valve can be represented as a percentage. Exemplarily, set the opening degree value when the butterfly valve is closed to 0%, and the opening degree value when the butterfly valve is fully open to 100. Other opening degree values can be, for example, 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%, 100% or other percentage values.

[0085] In some embodiments, the opening degree value of the exhaust butterfly valve can be represented as an angle. Usually, set the angle value (i.e., the opening degree value) when the butterfly valve is closed to 0°, and the angle value (i.e., the opening degree value) when it is fully open to 90°. During the opening process of the butterfly valve, describe its opening degree by the actually rotated angle. Other opening degree values can be, for example, 5°, 10°, 15°, 20°, 25°, 30°, 35°, 40°, 45°, 50°, 55°, 60°, 65°, 70°, 75°, 80°, 85° or other angle values.

[0086] In some embodiments, the reference value of the chamber pressure of the process chamber is the average reference value of the chamber pressure over a period of time. That is, the opening degree of the exhaust butterfly valve in the exhaust device is maintained at a preset opening value, and the gas source in the reference intake device is used to supply gas to the process chamber through the reference intake pipeline. The chamber pressure of the process chamber is detected in real time, and the average reference value of the chamber pressure in the process chamber during the first gas supply time is calculated.

[0087] The calculation formula for the average reference value of the chamber pressure is: , where P is the chamber pressure of the process chamber detected in real time, T1 is the first gas supply time, is the average reference value of the chamber pressure.

[0088] In some embodiments, the gas supply condition is to limit the chamber pressure of the process chamber to a preset pressure value, and the gas supply parameter is the opening degree of the exhaust butterfly valve in the exhaust device. Among them, the opening degree of the exhaust butterfly valve is dynamically correlated with the chamber pressure of the process chamber. Thus, in step S303, that is, the gas source in the reference intake device is used to supply gas to the process chamber through the reference intake pipeline at the reference flow rate value controlled by the flow controller. Under the gas supply condition of limiting the chamber pressure of the process chamber to a preset pressure value, the reference opening value of the exhaust butterfly valve in the exhaust device associated with the gas supply condition is obtained.

[0089] Among them, in some embodiments, the reference opening value of the exhaust butterfly valve is the average reference opening value over a period of time. That is, gas is supplied to the process chamber through the calibration intake pipeline, the chamber pressure of the process chamber is stabilized at a preset pressure value, the opening degree of the exhaust butterfly valve is detected in real time, and the average reference opening value of the exhaust butterfly valve during the second gas supply time is calculated.

[0090] The calculation formula for the average reference opening value is: , where K is the opening degree of the exhaust butterfly valve detected in real time, T2 is the second gas supply time, is the average reference opening value.

[0091] In addition, during the implementation of step S303, the temperature in the process chamber is always maintained at a set temperature value.

[0092] It should be noted that, in some embodiments, before the reference intake device supplies gas, a step of configuring the process chamber to a vacuum state may also be included.

[0093] Step S305, in the initial state, open the calibration intake valve assembly in one selected calibration intake device, and use the gas source in this calibration intake device to supply gas to the process chamber through the calibration intake pipeline. Under the preset gas supply conditions, obtain the calibration value of the gas supply parameter associated with the gas supply conditions.

[0094] In step S305, it is consistent with step S303. The gas supply conditions involve the chamber pressure of the process chamber and the opening degree of the exhaust butterfly valve in the exhaust device, and the gas supply parameter associated with the gas supply conditions is one of the chamber pressure of the process chamber and the opening degree of the exhaust butterfly valve in the exhaust device.

[0095] In some embodiments, the gas supply condition is to limit the opening degree of the exhaust butterfly valve in the exhaust device to a preset opening value, and the gas supply parameter is the chamber pressure of the process chamber. Thus, in step S305, that is, the gas source in the selected one-way calibration intake device is used to supply gas to the process chamber through the calibration intake pipeline, and under the gas supply condition of limiting the opening degree of the exhaust butterfly valve in the exhaust device to the preset opening value, the chamber pressure calibration value of the process chamber associated with the gas supply condition is obtained.

[0096] Among them, in some embodiments, the chamber pressure calibration value of the process chamber adopts the average chamber pressure calibration value within a period of time. That is, the opening degree of the exhaust butterfly valve in the exhaust device is maintained at the preset opening value, the gas source in the selected one-way calibration intake device is used to supply gas to the process chamber through the calibration intake pipeline, the chamber pressure of the process chamber is detected in real time, and the average chamber pressure calibration value of the process chamber within the first gas supply time is calculated.

[0097] The calculation formula for the average chamber pressure calibration value is: , where P is the chamber pressure of the process chamber detected in real time, T1 is the first gas supply time, and P2 is the average chamber pressure calibration value.

[0098] In some embodiments, the gas supply condition is to limit the chamber pressure of the process chamber to a preset pressure value, and the gas supply parameter is the opening degree of the exhaust butterfly valve in the exhaust device, where the opening degree of the exhaust butterfly valve is dynamically associated with the chamber pressure of the process chamber. Thus, in step S305, that is, the gas source in the selected one-way calibration intake device is used to supply gas to the process chamber through the calibration intake pipeline, and under the gas supply condition of limiting the chamber pressure of the process chamber to the preset pressure value, the opening degree calibration value of the exhaust butterfly valve in the exhaust device associated with the gas supply condition is obtained.

[0099] Among them, in some embodiments, the opening degree calibration value of the exhaust butterfly valve adopts the average opening degree calibration value within a period of time. That is, the gas source in the selected one-way calibration intake device is used to supply gas to the process chamber through the calibration intake pipeline, the chamber pressure of the process chamber is stabilized at the preset pressure value, the opening degree of the exhaust butterfly valve is detected in real time, and the average opening degree calibration value of the exhaust butterfly valve within the second gas supply time is calculated.

[0100] The calculation formula for the average opening degree calibration value is: , where K is the opening degree of the exhaust butterfly valve detected in real time, and T2 is the second gas transmission time, is the average value of opening degree calibration.

[0101] It should be noted that in some embodiments, the first gas transmission time corresponding to the average reference value of the cavity pressure of the process cavity calculated in step S303 is the same as the first gas transmission time corresponding to the average calibrated value of the cavity pressure of the process cavity in step S305, and the second gas transmission time corresponding to the average reference value of the opening degree of the exhaust butterfly valve calculated in step S303 is the same as the second gas transmission time corresponding to the average calibrated value of the opening degree of the exhaust butterfly valve in step S305. Of course, the first gas transmission time and the second gas transmission time can be set to the same time value or different time values.

[0102] In addition, during the implementation of step S305, the temperature in the process cavity is always maintained at a set temperature value.

[0103] It is worth noting that in some embodiments, before adjusting the air supply of the intake device, a step of configuring the process cavity to a vacuum state may also be included.

[0104] Step S307, calculate the deviation of the gas supply parameters between the obtained reference value of the gas supply parameters and the calibrated value of the gas supply parameters, and use the deviation of the gas supply parameters as the deviation of the gas flow rate.

[0105] In step S307, calculate the deviation of the gas supply parameters between the reference value of the gas supply parameters obtained from step S303 and the calibrated value of the gas supply parameters obtained from step S305.

[0106] In some embodiments, the gas supply condition is to limit the opening degree of the exhaust butterfly valve in the exhaust device to a preset opening degree value, and the gas supply parameter is the cavity pressure of the process cavity. Thus, calculate the deviation of the cavity pressure between the reference value of the cavity pressure obtained from step S303 and the calibrated value of the cavity pressure obtained from step S305, and use the calculated deviation of the cavity pressure as the deviation of the gas supply parameters.

[0107] Among them, the reference value of the cavity pressure of the process cavity uses the average reference value of the cavity pressure within a period of time, and the calibrated value of the cavity pressure of the process cavity uses the average calibrated value of the cavity pressure within a period of time. Then, the deviation of the cavity pressure between the two is calculated based on the average reference value of the cavity pressure and the average calibrated value of the cavity pressure.

[0108] Among them, the deviation of the cavity pressure is the ratio of the difference between the calibrated value of the cavity pressure and the reference value of the cavity pressure to the reference value of the cavity pressure.

[0109] In some embodiments, the gas supply condition is to limit the chamber pressure of the process chamber to a preset pressure value, and the gas supply parameter is the opening degree of the exhaust butterfly valve in the exhaust device. Among them, the opening degree of the exhaust butterfly valve is dynamically correlated with the chamber pressure of the process chamber. Thus, according to the opening degree reference value of the exhaust butterfly valve obtained from step S303 and the opening degree adjustment value of the exhaust butterfly valve obtained from step S305, the opening degree deviation between the two is calculated, and the calculated opening degree deviation is used as the gas supply parameter deviation. Among them, the opening degree deviation is the ratio of the difference between the opening degree adjustment value and the opening degree reference value to the opening degree reference value.

[0110] Among them, the opening degree reference value of the exhaust butterfly valve adopts the average opening degree reference value within a period of time, and the opening degree adjustment value of the exhaust butterfly valve adopts the average opening degree adjustment value within a period of time. Then, the opening degree deviation between the two is calculated according to the average opening degree reference value and the average opening degree adjustment value.

[0111] Step S309: Compare the gas flow rate deviation with the deviation threshold range to determine whether the gas flow rate deviation is within the deviation threshold range.

[0112] In step S309, the gas flow rate deviation calculated in step S307 is compared with the preset deviation threshold range. If the gas flow rate deviation exceeds the deviation threshold range, go to step S309; if the gas flow rate deviation is within the deviation threshold range, it indicates that the gas pressure regulating valve in this path of the calibrated intake device is equivalent to the flow controller in the reference intake device in terms of gas flow rate control.

[0113] In some embodiments, the gas supply condition is to limit the opening degree of the exhaust butterfly valve in the exhaust device to a preset opening degree value, the gas supply parameter is the chamber pressure of the process chamber, and according to the average chamber pressure reference value and the average chamber pressure adjustment value, the chamber pressure deviation between the two is calculated as the gas flow rate deviation, and the chamber pressure deviation is compared with the preset chamber pressure deviation threshold range.

[0114] Among them, the chamber pressure deviation is the ratio of the difference between the average chamber pressure adjustment value and the average chamber pressure reference value to the average chamber pressure reference value. Specifically, the calculation formula for the chamber pressure deviation as the gas flow rate deviation is: *100%, where represents the average chamber pressure reference value of the corresponding reference intake device, represents the average chamber pressure adjustment value of the corresponding calibrated intake device.

[0115] In some embodiments, the gas supply condition is to limit the chamber pressure of the process chamber to a preset pressure value, and the gas supply parameter is the opening degree of the exhaust butterfly valve in the exhaust device. Among them, the opening degree of the exhaust butterfly valve is dynamically related to the chamber pressure of the process chamber. Based on the average reference opening degree and the average calibrated opening degree, the opening degree deviation between the two is calculated as the gas flow deviation, and the opening degree deviation is compared with a preset opening degree deviation threshold range.

[0116] Among them, the opening degree deviation is the ratio of the difference between the average calibrated opening degree and the average reference opening degree to the average reference opening degree. Specifically, the calculation formula for the opening degree deviation as the gas flow deviation is: *100%, where represents the average reference opening degree corresponding to the reference intake device, represents the average calibrated opening degree corresponding to the calibrated intake device.

[0117] In some embodiments, the deviation threshold range can be set as [-a%, +a%]. For example, the deviation threshold range is [-3%, +3%], or [-1%, +1%], [-2%, +2%], [-4%, +4%], [-5%, +5%], etc.

[0118] In some embodiments, the deviation threshold range can be set as [-a%, +b%], where a and b are different numbers. For example, the deviation threshold range is [-1%, +2%], or [-2%, +3%], [-2%, +1%], [-3%, +2%], etc.

[0119] In step S309, the calculated gas flow deviation is compared with the deviation threshold range. If the gas flow deviation is within the deviation threshold range, it indicates that the gas pressure regulating valve in this calibrated intake device is equivalent to the flow controller in the reference intake device in terms of gas flow control. If the gas flow deviation exceeds the deviation threshold range, it indicates that there is a large difference between the gas flow in this calibrated intake device and the gas flow in the reference intake device.

[0120] Step S311, adjust the gas pressure regulating valve in the selected calibrated intake device.

[0121] In step S311, according to step S309, when the gas flow deviation exceeds the deviation threshold range, the gas pressure regulating valve in this calibrated intake device is adjusted according to the gas flow deviation.

[0122] After step S311, continue to repeat steps S305 to S311 until the gas flow deviation is within the deviation threshold range, and complete the calibration of this calibrated intake device.

[0123] As can be seen from the above, in the calibration method of the intake device in the semiconductor processing equipment provided by the present disclosure, first, a reference path exhaust device with a flow controller is used to supply gas, so as to obtain a reference value of the gas supply parameter associated with the gas supply condition under the preset gas supply condition. Both the gas supply condition and the gas supply parameter involve the chamber pressure of the process chamber and the opening degree of the exhaust butterfly valve in the exhaust device; then, gas is supplied to a selected calibrated intake device to obtain a calibrated value of the gas supply parameter associated with the gas supply condition when the gas supply condition is met; the gas supply parameter deviation is calculated as the gas flow deviation based on the reference value of the gas supply parameter and the calibrated value of the gas supply parameter, and the gas pressure regulating valve in this calibrated intake device is gradually adjusted to change the gas flow until the gas flow deviation meets the deviation threshold range, thereby completing the calibration of this calibrated intake device. Compared with the related art, the calibration method of the intake device provided by the present disclosure has a simple process. Through the calibration of the gas flow deviation, the gas flow of the intake device configured with a regulating valve can be equivalent to the gas flow of the intake device configured with a flow controller, so as to realize the equivalence of the gas pressure regulating valve to the flow controller, reduce the usage amount of the flow controller, and effectively reduce the cost. In particular, for some gases with a fixed flow rate determined in a process and insensitive to the gas deviation amount, by using the calibration method of the intake device in the semiconductor processing equipment provided by the present disclosure, most of the flow controllers can be equivalently replaced by ordinary gas pressure regulating valves, so as to reduce the usage amount of the flow controllers in the semiconductor processing equipment, achieve a good effect of reducing costs and increasing efficiency, and ensure the normal operation of related processes or equipment and the product quality.

[0124] The following will be combined with Figure 1 (or Figure 2 ) and Figure 3 , and the calibration methods under different gas supply conditions will be described in detail. Among them, in the semiconductor processing equipment shown in Figure 1 and Figure 2 , the mass flow controller MFC used for the flow controller configured in the reference intake device is only for illustrative purposes. In other embodiments, other types of flow controllers may also be used, which is not intended to limit the protection scope of the present disclosure.

[0125] In some embodiments, the gas supply condition is to limit the opening degree of the exhaust butterfly valve in the exhaust device to a preset opening value, and the gas supply parameter is the chamber pressure of the process chamber.

[0126] In the initial state, all the multi-way intake devices are closed and the exhaust device is opened. Among them, the opening of the exhaust device specifically includes: opening the exhaust valve assembly in the exhaust device and limiting the opening degree of the exhaust butterfly valve in the exhaust device to a preset opening value.

[0127] Supply gas to the reference intake device:

[0128] In the initial state, open the reference intake valve assembly in the reference intake device (for example, the reference intake pipeline valve, or the gas source valve FV0 and the controller valve V0), and use a mass flow controller to control the gas flow rate to a reference flow rate value, so that the gas source GS0 in the reference intake device delivers gas to the process chamber 10 through the reference intake pipeline, and the chamber pressure of the process chamber 10 is detected in real time. Until the first gas delivery time reaches the preset gas delivery time threshold, within this first gas delivery time, the delivered gas can be stabilized in the process chamber 10, and calculate the reference average value of the chamber pressure of the process chamber 10 within the first gas delivery time. Among them, the gas flow rate unit can be sccm (standard cubic centimeter per minute), and the first gas delivery time unit can be minutes or seconds. During the gas delivery process, keep the temperature in the process chamber always at a set temperature value.

[0129] Exemplarily, open the exhaust valve assembly in the exhaust device and limit the opening of the exhaust butterfly valve in the exhaust device to a preset opening value (for example, 50% or 45°), and use a mass flow controller to control the gas (for example, N2) to be delivered to the process chamber at a reference flow rate value (for example, 1500 sccm), and detect the chamber pressure of the process chamber 10 in real time. Wait until the first gas delivery time T1 reaches the preset gas delivery time threshold (for example, 60 seconds, 90 seconds, 120 seconds, etc.), and calculate the reference average value of the chamber pressure of the process chamber 10 within the first gas delivery time T1 , that is, .

[0130] Among them, for the reference intake device, after the first gas delivery time T1 reaches the preset gas delivery time threshold, the reference intake valve assembly in the reference intake device (for example, the reference intake pipeline valve, or the gas source valve FV0 and the controller valve V0) can be closed to stop gas delivery. However, this is not limited thereto. For example, after the first gas delivery time T1 reaches the preset gas delivery time threshold, the gas source GS0 in the reference intake device can still continue to deliver gas to the process chamber 10 through the reference intake pipeline.

[0131] Supply gas to one path of the calibration intake device to be calibrated:

[0132] In the initial state (where the opening degree of the exhaust butterfly valve in the exhaust device remains at a preset opening degree value), select one path of the calibration intake device, and open the calibration intake valve assembly (for example, the calibration intake pipeline valve V1 in the first path of the calibration intake device) in the selected path of the calibration intake device (at this time, the reference intake valve assembly in the reference intake device has been closed). The gas source in this path of the calibration intake device supplies gas to the process chamber 10 through the calibration intake pipeline, and the chamber pressure of the process chamber 10 is detected in real time. Until the first gas supply time reaches the preset gas supply time threshold, within this first gas supply time, the supplied gas can be stabilized in the process chamber 10, and the average value of the chamber pressure calibration in the process chamber 10 within the first gas supply time is calculated. Among them, the gas flow unit can adopt sccm (standard cubic centimeter per minute), and the first gas supply time unit can adopt minutes or seconds. During the process of supplying gas, the temperature in the process chamber is always maintained at a set temperature value.

[0133] Exemplarily, keep the opening degree of the exhaust butterfly valve in the exhaust device at the original preset opening degree value (for example, 50% or 45°), supply gas (for example, N2) to the process chamber 10 by the selected first path of the calibration intake device, detect the chamber pressure of the process chamber 10 in real time, and wait until the first gas supply time T1 reaches the preset gas supply time threshold (for example, 60 seconds, 90 seconds, 120 seconds, etc.), and calculate the average value of the chamber pressure calibration in the process chamber 10 within the first gas supply time. , that is, .

[0134] Among them, for the selected path of the calibration intake device, after the first gas supply time T1 reaches the preset gas supply time threshold, the calibration intake valve assembly (for example, the calibration intake pipeline valve in this path of the calibration intake device) in this path of the calibration intake device can be closed to stop supplying gas. However, this is not limited thereto. For example, after the first gas supply time T1 reaches the preset gas supply time threshold, the gas source in this path of the calibration intake device can still supply gas to the process chamber 10 through the calibration intake pipeline.

[0135] Gas flow deviation calculation:

[0136] According to the obtained chamber pressure reference value and chamber pressure calibration value, calculate the chamber pressure deviation between the two, and the chamber pressure deviation is used as the gas flow deviation.

[0137] In some embodiments, the chamber pressure deviation is the ratio of the difference between the chamber pressure calibration value and the chamber pressure reference value to the chamber pressure reference value.

[0138] Exemplarily, the calculated average reference cavity pressure and the average calibrated cavity pressure are used. According to the calculation formula: *100%, the cavity pressure deviation is calculated as the gas flow rate deviation.

[0139] The gas flow rate deviation is compared with the deviation threshold range:

[0140] The calculated cavity pressure deviation is compared with the preset cavity pressure deviation threshold range.

[0141] Exemplarily, the calculated cavity pressure deviation *100% is compared with the cavity pressure deviation threshold range (for example, [-a%, +a%] or [-a%, +b%]).

[0142] If the cavity pressure deviation is within the cavity pressure deviation threshold range, it indicates that the gas pressure regulator in this path of the calibrated intake device (for example, the gas pressure regulator RV1 in the first path of the calibrated intake device) is equivalent to the mass flow controller MFC in the reference intake device in terms of gas flow rate control.

[0143] If the cavity pressure deviation exceeds the cavity pressure deviation threshold range, the gas pressure regulator in this path of the calibrated intake device is adjusted according to the calculated cavity pressure deviation.

[0144] Exemplarily, taking the cavity pressure deviation threshold range [-a%, +a%] as an example: If the cavity pressure deviation exceeds the lower limit -a% of the cavity pressure deviation threshold range, that is, the average calibrated cavity pressure is lower than the average reference cavity pressure and the difference is large, it indicates that the gas flow rate of this path of the calibrated intake device is low. Adjust the gas pressure regulator in this path of the calibrated intake device, for example, increase the opening degree of the gas pressure regulator, increase the gas flow rate, and increase the cavity pressure of the process cavity. If the cavity pressure deviation exceeds the upper limit +a% of the cavity pressure deviation threshold range, that is, the average calibrated cavity pressure is higher than the average reference cavity pressure and the difference is large, it indicates that the gas flow rate of this path of the calibrated intake device is high. Adjust the gas pressure regulator in this path of the calibrated intake device, for example, decrease the opening degree of the gas pressure regulator, decrease the gas flow rate, and decrease the cavity pressure of the process cavity.

[0145] In some embodiments, the characteristics of the gas pressure regulator can be analyzed in terms of gas flow rate. For example, for different gases, when the exhaust butterfly valve in the exhaust device is at different opening degrees, the gas pressure regulator is adjusted to different opening and closing degrees, and the corresponding gas flow rates are recorded. Through gas flow rate analysis, the gas flow rate distribution curve that the gas pressure regulator can control for the target gas within the entire opening and closing degree range can be obtained. In this way, after calculating the chamber pressure deviation, the target opening and closing degree or the adjustment range of the opening and closing degree of the gas pressure regulator can be determined according to the gas flow rate distribution curve, and the adjustment can be made accordingly to achieve precise control.

[0146] Subsequently, continue the measurement of the average value of the chamber pressure calibration, the calculation of the chamber pressure deviation, and the comparison of the chamber pressure deviation with the chamber pressure deviation threshold range in the aforesaid one-way calibration intake device to be calibrated for verification; if the chamber pressure deviation still exceeds the chamber pressure deviation threshold range, then adjust the gas pressure regulator again and continue the aforesaid various operations until the chamber pressure deviation is within the chamber pressure deviation threshold range, so that the gas pressure regulator in this one-way calibration intake device is equivalent to the flow controller in the reference intake device in terms of gas flow rate control.

[0147] After completing the calibration of the gas pressure regulator in this one-way calibration intake device, the next one-way calibration intake device can be selected, and the aforesaid calibration method can be executed, and so on until the calibration of the gas pressure regulators in all the multi-way calibration intake devices is completed.

[0148] In some embodiments, the gas supply condition is to limit the chamber pressure of the process chamber to a preset pressure value, and the gas supply parameter is the opening degree of the exhaust butterfly valve in the exhaust device, wherein the opening degree of the exhaust butterfly valve is dynamically related to the chamber pressure of the process chamber.

[0149] In the initial state, all the multi-way intake devices are closed and the exhaust device is opened, wherein the opening of the exhaust device specifically includes: opening the exhaust valve assembly (including the exhaust butterfly valve) in the exhaust device.

[0150] Supply gas from the reference intake device:

[0151] In the initial state, open the reference intake valve assembly in the reference intake device (for example, the reference intake pipeline valve, or the gas source valve FV0 and the controller valve V0), and use a mass flow controller to control the gas flow to a reference flow value, so that the gas source GS0 in the reference intake device supplies gas to the process chamber 10 through the reference intake pipeline. During the gas supply process, control the pressure to limit the chamber pressure of the process chamber to a preset pressure value, and detect the opening of the exhaust butterfly valve in real time. Until the second gas supply time T2 reaches the preset gas supply time threshold, within this second gas supply time T2, the supplied gas can be stabilized in the process chamber 10, and calculate the reference average opening of the exhaust butterfly valve in the process chamber 10 during the second gas supply time. Among them, the gas flow unit can be sccm (standard cubic centimeter per minute), and the unit of the second gas supply time T2 can be minutes or seconds. During the process of supplying gas, keep the temperature in the process chamber always at a set temperature value.

[0152] Exemplarily, open the exhaust valve assembly (including the exhaust butterfly valve) in the exhaust device, and use a mass flow controller to control the gas (for example, N2) to be supplied to the process chamber at a reference flow value (for example, 1500 sccm). During the gas supply process, limit the chamber pressure of the process chamber to a preset pressure value, and detect the opening of the exhaust butterfly valve in real time. When the second gas supply time T2 reaches the preset gas supply time threshold (for example, 60 seconds, 90 seconds, 120 seconds, etc.), calculate the reference average opening of the exhaust butterfly valve during the second gas supply time T2 , that is, .

[0153] For the reference intake device, after the second gas supply time T2 reaches the preset gas supply time threshold, the reference intake valve assembly in the reference intake device (for example, the reference intake pipeline valve, or the gas source valve FV0 and the controller valve V0) can be closed to stop gas supply. However, this is not limited thereto. For example, after the second gas supply time T2 reaches the preset gas supply time threshold, the gas source GS0 in the reference intake device can still continue to supply gas to the process chamber 10 through the reference intake pipeline.

[0154] Supply gas to one path of the calibration intake device to be calibrated:

[0155] In the initial state, select one path of the calibration intake device, and open the calibration intake valve assembly in the selected path of the calibration intake device (for example, the first path of the calibration intake device) (for example, the calibration intake pipeline valve V1 in the first path of the calibration intake device) (at this time, the reference intake valve assembly in the reference intake device has been closed). The gas source in this path of the calibration intake device conveys gas to the process chamber 10 through the calibration intake pipeline. During the gas conveyance process, implement pressure control to limit the chamber pressure of the process chamber to a preset pressure value, and detect the opening degree of the exhaust butterfly valve in real time. Until the second gas conveyance time T2 reaches the preset gas conveyance time threshold, within this second gas conveyance time T2, the conveyed gas can be stabilized in the process chamber 10, and calculate the average calibration value of the opening degree of the exhaust butterfly valve in the process chamber 10 within the second gas conveyance time T2. Among them, the gas flow unit can adopt sccm (standard cubic centimeter per minute), and the unit of the second gas conveyance time can adopt minutes or seconds. During the process of conveying gas, keep the temperature in the process chamber always at a set temperature value.

[0156] Exemplarily, open the exhaust valve assembly (including the exhaust butterfly valve) in the exhaust device, and the selected first path of the calibration intake device conveys gas (for example, N2) to the process chamber 10. During the gas conveyance process, limit the chamber pressure of the process chamber to a preset pressure value, detect the opening degree of the exhaust butterfly valve in real time. When the second gas conveyance time T2 reaches the preset gas conveyance time threshold (for example, 60 seconds, 90 seconds, 120 seconds, etc.), calculate the average calibration value of the opening degree of the exhaust butterfly valve within the second gas conveyance time T2 , that is, .

[0157] Among them, for the selected one path of the calibration intake device, after the second gas conveyance time T2 reaches the preset gas conveyance time threshold, the calibration intake valve assembly in this path of the calibration intake device (for example, the calibration intake pipeline valve in this path of the calibration intake device) can be closed to stop gas conveyance. However, it is not limited thereto. For example, after the second gas conveyance time T2 reaches the preset gas conveyance time threshold, the gas source in this path of the calibration intake device can still continue to convey gas to the process chamber 10 through the calibration intake pipeline.

[0158] Gas flow deviation calculation:

[0159] According to the obtained opening degree reference value and the opening degree calibration value, calculate the opening degree deviation between the two, and the opening degree deviation is used as the gas flow deviation.

[0160] In some embodiments, the opening degree deviation is the ratio of the difference between the opening degree calibration value and the opening degree reference value to the opening degree reference value.

[0161] Exemplarily, use the calculated average reference opening degree of the exhaust butterfly valve and the average opening degree adjustment value In the following, according to the calculation formula: *100%, calculate the opening degree deviation as the gas flow deviation.

[0162] Compare the gas flow deviation with the deviation threshold range:

[0163] Compare the calculated cavity pressure deviation with the preset cavity pressure deviation threshold range.

[0164] Exemplarily, compare the calculated opening degree deviation *100% with the opening degree deviation threshold range (for example, [-a%, +a%] or [-a%, +b%]).

[0165] If the opening degree deviation is within the opening degree deviation threshold range, it indicates that the gas pressure regulating valve in this path of the calibrated intake device (for example, the gas pressure regulating valve RV1 in the first path of the calibrated intake device) is equivalent to the mass flow controller MFC in the reference intake device in terms of gas flow control.

[0166] If the opening degree deviation exceeds the opening degree deviation threshold range, adjust the gas pressure regulating valve in this path of the calibrated intake device according to the calculated opening degree deviation.

[0167] Exemplarily, taking the opening degree deviation threshold range [-a%, +a%] as an example: If the opening degree deviation exceeds the lower limit -a% of the opening degree deviation threshold range, that is, the average opening degree adjustment value is lower than the average reference opening degree and the difference is large, it indicates that the gas flow of this path of the calibrated intake device is low. Adjust the gas pressure regulating valve in this path of the calibrated intake device, for example, increase the opening degree of the gas pressure regulating valve to increase the gas flow, so that the exhaust butterfly valve increases the opening degree to limit the cavity pressure of the process cavity to the preset pressure value. If the opening degree deviation exceeds the upper limit +a% of the opening degree deviation threshold range, that is, the average opening degree adjustment value is higher than the average reference opening degree and the difference is large, it indicates that the gas flow of this path of the calibrated intake device is high. Adjust the gas pressure regulating valve in this path of the calibrated intake device, for example, reduce the opening degree of the gas pressure regulating valve to reduce the gas flow, so that the exhaust butterfly valve reduces the opening degree to limit the cavity pressure of the process cavity to the preset pressure value.

[0168] Subsequently, continue to calculate the average value of the opening adjustment, calculate the opening deviation, and compare the opening deviation with the opening deviation threshold range in the aforesaid one-way calibration intake device to be calibrated for verification; if the opening deviation still exceeds the opening deviation threshold range, then adjust the gas pressure regulating valve again and continue the aforesaid various operations until the opening deviation is within the opening deviation threshold range, so that the gas pressure regulating valve in this one-way calibration intake device is equivalent to the flow controller in the reference intake device in terms of gas flow control.

[0169] After completing the calibration of the gas pressure regulating valve in this one-way calibration intake device, the next one-way calibration intake device can be selected, and the aforesaid calibration method can be executed, and so on until the calibration of the gas pressure regulating valves in all the multi-way calibration intake devices is completed.

[0170] The embodiment of the present disclosure also provides a control device. In some embodiments, the control device can be, for example, a host computer, and the host computer is connected to a multi-way intake device, an exhaust device, etc.

[0171] Please refer to Figure 4 , which shows the principle block diagram of the control device provided by the present disclosure in an embodiment.

[0172] As Figure 4 shown, the control device 4 includes a processor 41 and a memory 43. Communication can be carried out between the processor 41 and the memory 43 through a bus 42. A calibration program of the intake device can be stored in the memory 43. The processor 41 executes each step in the calibration method of the intake device by running the calibration program of the intake device in the memory 43.

[0173] The bus 42 can be a Peripheral Component Interconnect (PCI) bus or an Extended Industry Standard Architecture (EISA) bus, etc. The bus can be divided into an address bus, a data bus, a control bus, etc. For the sake of convenience of representation, although only a thick line is used in the figure to represent it, it does not mean that there is only one bus or one type of bus.

[0174] In some embodiments, the processor 41 may be implemented as a Central Processing Unit (CPU), a Micro Controller Unit (MCU), a System on Chip (SoC), a Field Programmable Gate Array (FPGA), or the like. The memory 43 may include volatile memory for temporarily storing data when running a program, such as Random Access Memory (RAM). The memory 43 may also include non-volatile memory (Non-Volatile Memory; NVM) for data storage, such as Read-Only Memory (ROM), flash memory, a Hard Disk Drive (HDD), or a Solid-State Disk (SSD).

[0175] In practical applications, the control device may be associated with a multi-channel intake device and an exhaust device, etc., for controlling each component in the intake device and each component in the exhaust device. By setting relevant conditions, the air supply state of one calibrated intake device to be calibrated is made to approach the air supply state of the reference intake device, and the gas pressure regulating valve is gradually fine-tuned, so that the gas flow rate generated by the gas pressure regulating valve in the calibrated intake device is the same as or substantially the same as the gas flow rate controlled by the reference intake device, thereby achieving the equivalence of the calibrated intake device and the reference intake device in gas flow control, and thus realizing the equivalence of the gas pressure regulating valve as a flow controller, reducing the usage amount of flow controllers, and effectively reducing costs.

[0176] The embodiments of the present disclosure may also provide a computer-readable storage medium storing a computer program or instruction, and when the computer program or instruction is run, it implements the process or function of the calibration method of the intake device in any of the foregoing embodiments.

[0177] That is, the method steps in the above embodiments are implemented as software or computer code that can be stored in a recording medium (such as a CDROM, RAM, floppy disk, hard disk, or magneto-optical disk), or as computer code that is originally stored in a remote recording medium or a non-transitory machine-readable medium and downloaded through a network and will be stored in a local recording medium, so that the method represented herein can be stored on such a recording medium for software processing using a general-purpose computer, a dedicated processor, or programmable or dedicated hardware (such as an ASIC or an FPGA).

[0178] In an embodiment of the present disclosure, a computer program product may also be provided, and multiple computer programs or instructions, when running, wholly or partially execute the processes or functions of the calibration method of the intake device in the embodiments of the present disclosure. The computer program product includes multiple computer programs or instructions.

[0179] The computer programs or instructions may be stored in a readable storage medium, or transmitted from one readable storage medium to another. For example, the computer programs or instructions may be transmitted from one website, computer, server, or data center to another website, computer, server, or data center in a wired or wireless manner. The readable storage medium may be any available medium that can be accessed, or a data storage device such as a server or data center integrating multiple available media. The available medium may be a magnetic medium, such as a floppy disk, hard disk, or magnetic tape; it may also be an optical medium, such as a digital video disc; or it may be a semiconductor medium, such as a solid state drive. The computer-readable storage medium may be a volatile or non-volatile storage medium, or may include both volatile and non-volatile types of storage media.

[0180] The above embodiments are only illustrative of the principles and effects of the present disclosure, and are not used to limit the present disclosure. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present disclosure. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed by the present disclosure should still be covered by the protection scope of the present disclosure.

Claims

1. A calibration method for an intake device in a semiconductor processing apparatus, characterized in that, It includes the following steps: Configure a multi-channel intake device and an exhaust device: The multi-channel intake device includes a reference intake device and at least one tuned intake device. The reference intake device includes a reference intake pipeline, a gas source, a flow controller, and a reference intake valve assembly. Each tuned intake device includes a tuned intake pipeline, a gas source, a gas pressure regulator, and a tuned intake valve assembly. The exhaust device includes an exhaust pipeline, an exhaust pump, and an exhaust valve assembly provided on the exhaust pipeline. The exhaust valve assembly includes an exhaust butterfly valve. In the initial state, the multi-channel intake device is closed and the exhaust device is open; Supply gas by the reference intake device: In the initial state, open the reference intake valve assembly in the reference intake device, and use the flow controller to control the gas flow to a reference flow value, so that the gas source in the reference intake device delivers gas to the process chamber through the reference intake pipeline. Under the preset gas supply conditions, obtain a reference value of the gas supply parameter associated with the gas supply conditions; wherein, the gas supply conditions involve the chamber pressure of the process chamber and the opening degree of the exhaust butterfly valve in the exhaust device, and the gas supply parameter associated with the gas supply conditions is one of the chamber pressure of the process chamber and the opening degree of the exhaust butterfly valve in the exhaust device; Supply gas by the tuned intake device: In the initial state, open the tuned intake valve assembly in the selected tuned intake device, and let the gas source in this tuned intake device deliver gas to the process chamber through the tuned intake pipeline. Under the preset gas supply conditions, obtain a tuned value of the gas supply parameter associated with the gas supply conditions; Calculate the gas flow deviation: According to the obtained reference value of the gas supply parameter and the tuned value of the gas supply parameter, calculate the deviation of the two gas supply parameters, and take the deviation of the gas supply parameter as the gas flow deviation; Adjust the gas pressure regulator: Compare the gas flow deviation with the deviation threshold range. When the gas flow deviation exceeds the deviation threshold range, adjust the gas pressure regulator in this tuned intake device; Repeat the above steps of supplying gas by the tuned intake device, obtaining the gas flow deviation, and adjusting the gas pressure regulator until the gas flow deviation is within the deviation threshold range, and complete the tuning of this tuned intake device.

2. The calibration method of the intake device in the semiconductor processing equipment according to claim 1, wherein, The gas supply condition is to limit the opening degree of the exhaust butterfly valve in the exhaust device to a preset opening value, and the gas supply parameter is the chamber pressure of the process chamber; the steps of calculating the gas flow deviation include: Limit the opening degree of the exhaust butterfly valve in the exhaust device to a preset opening value. In the reference intake device, according to the reference flow value set by the flow controller, deliver gas to the process chamber through the reference intake pipeline, and obtain a reference value of the chamber pressure in the process chamber; Keep the opening degree of the exhaust butterfly valve in the exhaust device at the preset opening value. In the selected tuned intake device, deliver gas to the process chamber through the tuned intake pipeline, and obtain a tuned value of the chamber pressure in the process chamber; and According to the obtained reference value of the chamber pressure and the tuned value of the chamber pressure, calculate the chamber pressure deviation as the gas flow deviation; wherein, the chamber pressure deviation is the ratio of the difference between the tuned value of the chamber pressure and the reference value of the chamber pressure to the reference value of the chamber pressure.

3. The calibration method of the air intake device in the semiconductor processing equipment according to claim 2, characterized in that, The steps of obtaining the reference value of the chamber pressure in the process chamber include: keeping the opening degree of the exhaust butterfly valve in the exhaust device at a preset opening degree value, delivering gas to the process chamber through the reference intake pipeline, detecting the chamber pressure of the process chamber in real time, and calculating the average reference value of the chamber pressure in the process chamber within the first gas delivery time; the steps of obtaining the calibration value of the chamber pressure in the process chamber include: keeping the opening degree of the exhaust butterfly valve in the exhaust device at a preset opening degree value, delivering gas to the process chamber through the calibration intake pipeline, detecting the chamber pressure of the process chamber in real time, and calculating the average calibration value of the chamber pressure in the process chamber within the first gas delivery time.

4. The calibration method of the intake device in the semiconductor processing equipment according to claim 1, wherein, The gas supply condition is to limit the chamber pressure of the process chamber to a preset pressure value, and the gas supply parameter is the opening degree of the exhaust butterfly valve in the exhaust device. Among them, the opening degree of the exhaust butterfly valve is dynamically related to the chamber pressure of the process chamber; the steps of calculating the gas flow deviation include: In the reference intake device, according to the reference flow value set by the flow controller, deliver gas to the process chamber through the reference intake pipeline, stabilize the chamber pressure of the process chamber at the preset pressure value, and obtain the reference opening degree value of the exhaust butterfly valve in the exhaust device; In one selected reference intake device, deliver gas to the process chamber through the calibration intake pipeline, stabilize the chamber pressure of the process chamber at the preset pressure value, and obtain the calibration opening degree value of the exhaust butterfly valve in the exhaust device; and According to the obtained reference opening degree value and calibration opening degree value, calculate the opening degree deviation as the gas flow deviation; among them, the opening degree deviation is the ratio of the difference between the calibration opening degree value and the reference opening degree value to the reference opening degree value.

5. The calibration method of the air intake device in the semiconductor processing equipment according to claim 4, characterized in that, The steps of obtaining the reference opening degree value of the exhaust butterfly valve in the exhaust device include: delivering gas to the process chamber through the reference intake pipeline, stabilizing the chamber pressure of the process chamber at the preset pressure value, detecting the opening degree of the exhaust butterfly valve in real time, and calculating the average reference opening degree value of the exhaust butterfly valve within the second gas delivery time; the steps of obtaining the calibration value of the chamber pressure in the process chamber include: delivering gas to the process chamber through the calibration intake pipeline, stabilizing the chamber pressure of the process chamber at the preset pressure value, detecting the opening degree of the exhaust butterfly valve in real time, and calculating the average calibration opening degree value of the exhaust butterfly valve within the second gas delivery time.

6. The calibration method of the intake device in the semiconductor processing equipment according to claim 1, wherein During the process of delivering gas to the process chamber through the reference intake pipeline or during the process of delivering gas to the process chamber through the calibration intake pipeline, the temperature in the process chamber remains stable.

7. The calibration method of the intake device in the semiconductor processing equipment according to claim 1, wherein, When the gas flow deviation exceeds the deviation threshold range, adjusting the gas pressure regulating valve in this calibration intake device includes: When the gas flow deviation exceeds the deviation threshold range, if it is judged that the gas flow rate of the gas delivered in the calibration intake device is less than the gas flow rate of the gas delivered in the reference intake device, then increase the opening degree of the gas pressure regulating valve to increase the gas flow rate; and When the gas flow deviation exceeds the deviation threshold range, if it is judged that the gas flow rate of the gas delivered in the calibration intake device is greater than the gas flow rate of the gas delivered in the reference intake device, then decrease the opening degree of the gas pressure regulating valve to decrease the gas flow rate.

8. A semiconductor processing apparatus, characterized in that, Include: A process chamber, a multi-channel gas inlet device, and an exhaust device. The multi-channel gas inlet device includes a reference gas inlet device and at least one tuning gas inlet device. The reference gas inlet device includes a reference gas inlet pipeline, a gas source, a flow controller, and a reference gas inlet valve assembly. Each tuning gas inlet device includes a tuning gas inlet pipeline, a gas source, a gas pressure regulator, and a tuning gas inlet valve assembly. The exhaust device includes an exhaust pipeline, an exhaust pump, and an exhaust valve assembly provided on the exhaust pipeline. Among them, the gas pressure regulator in the tuning gas inlet device is implemented by using the tuning method of the gas inlet device in the semiconductor processing equipment according to any one of claims 1 to 7.

9. A control device, characterized in that, Comprising: A processor; A memory storing a tuning program for the gas inlet device; Among them, when the tuning program for the gas inlet device is run by the processor, it executes the tuning method of the gas inlet device in the semiconductor processing equipment according to any one of claims 1 to 7.

10. A computer-readable storage medium having a calibration program for an intake device stored thereon, characterized in that, When the tuning program for the gas inlet device is executed by the processor, it implements the tuning method of the gas inlet device in the semiconductor processing equipment according to any one of claims 1 to 7.

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