Substrate processing apparatus

Abstract

The present invention provides a substrate processing apparatus, comprising: a process chamber providing a substrate processing space; a substrate chuck that supports the substrate in the substrate processing space, has a heater, and adjusts the temperature of the substrate; and a chuck temperature adjustment unit that divides the substrate chuck into a plurality of heating regions and adjusts the temperature of the substrate chuck in each heating region by a heat absorption effect, a heat insulation effect, and a cooling effect.

Description

Technical Field

[0001] Embodiments of the present invention relate to a substrate processing apparatus used when processing a substrate such as a wafer. More specifically, embodiments of the present invention relate to a substrate processing apparatus including a substrate chuck capable of adjusting the temperature of a substrate. Background Art

[0002] To manufacture semiconductors and the like, various substrate processing processes need to be performed, and a substrate processing apparatus is required to perform the substrate processing processes.

[0003] Generally, a substrate processing apparatus includes a substrate chuck that supports a substrate during a substrate processing process. Moreover, the substrate chuck includes a heater for heating the substrate to maintain the temperature of the substrate at a temperature required for the substrate processing process.

[0004] The substrate chuck can be heated by a heater. Moreover, heat from the heater can be transferred to the substrate through the substrate chuck. To prevent problems such as process defects and a decrease in process efficiency due to temperature differences between regions of the substrate, the heater is configured to divide the substrate chuck into a plurality of regions and heat the substrate chuck by region.

[0005] If the substrate chuck is divided into a relatively small number of regions and heated by region, it is difficult to precisely control the temperature distribution of the substrate chuck, and the temperature distribution of the substrate chuck is inevitably uneven. On the contrary, if the substrate chuck is divided into a relatively large number of regions and heated by region, it is advantageous in terms of uniformizing the temperature distribution of the substrate chuck, but there are problems in that the structure of the heater is complex, it is difficult to set up the heater, and it is bound to be disadvantageous in manufacturing the substrate chuck. Therefore, in practice, improvement measures for this need to be prepared.

[0006] Prior Art Documents: Patent Documents

[0007] (Patent Document 1) Korean Patent Publication No. 10-2005-0109132 (November 17, 2005)

[0008] (Patent Document 1) Korean Patent Publication No. 10-2021-0144333 (November 30, 2021) Summary of the Invention

[0009] Embodiments of the present invention will provide a substrate processing apparatus capable of uniformly heating a substrate with a simple structure during substrate processing.

[0010] The problems to be solved are not limited to this, and other problems not mentioned will be clearly understood by those of ordinary skill in the art from the following description.

[0011] According to an embodiment of the present invention, there may be provided a substrate processing apparatus including: a process chamber providing a substrate processing space; a substrate chuck supporting a substrate in the substrate processing space, having a heater, and adjusting the temperature of the substrate; and a heat sink plate provided below the substrate chuck and absorbing heat from the substrate chuck to adjust the temperature of the substrate chuck. The heat sink plate is composed of a plurality of heat sink blocks divided to divide the substrate chuck into a plurality of heating regions and absorbing the heat according to the heating regions, and the plurality of heat sink blocks are selectively removed based on temperature according to the heating regions. It may be that the plurality of heat sink blocks are radiators.

[0012] According to an embodiment of the present invention, the substrate processing apparatus may further include: a heat insulating plate provided below the heat sink plate. It may be that the heat insulating plate is composed of a plurality of heat insulating blocks divided to block heat transfer according to the heating regions, and the plurality of heat insulating blocks are selectively removed based on temperature according to the heating regions.

[0013] According to an embodiment of the present invention, the substrate processing apparatus may further include: a nozzle block injecting a cooling gas upward from below the heat insulating plate. It may be that the cooling gas is an inert gas. It may be that the cooling gas is nitrogen (N2).

[0014] It may be that the substrate chuck is spaced upward from the bottom surface of the substrate processing space, and the nozzle block is disposed on the bottom surface side of the substrate processing space.

[0015] It may be that the cooling gas injected upward from the nozzle block collides with the lower surface of the heat insulating plate and flows toward the side wall of the process chamber, and the process chamber is provided with an exhaust port on the side wall.

[0016] According to an embodiment of the present invention, the substrate processing apparatus may further include: a chuck temperature detector detecting temperature according to the heating regions.

[0017] It may be that the substrate processing apparatus performs an ashing process as a substrate processing process.

[0018] It may be that the plurality of heat sink blocks are in contact with the lower surface of the substrate chuck and absorb the heat conducted from the substrate chuck. For example, it may be that the plurality of heat sink blocks include aluminum nitride (AlN) material having excellent thermal conductivity for heat.

[0019] According to an embodiment of the present invention, there may be provided a substrate processing apparatus including: a process chamber providing a substrate processing space; a substrate chuck supporting a substrate in the substrate processing space, having a heater, and adjusting the temperature of the substrate; and a chuck temperature adjusting unit dividing the substrate chuck into a plurality of heating regions and adjusting the temperature of the substrate chuck according to the heating regions by a temperature adjusting gas.

[0020] The chuck temperature adjusting unit may include: a nozzle block ejecting the temperature adjusting gas upward from below the substrate chuck. The nozzle block may be configured to eject the temperature adjusting gas according to the heating regions. The nozzle block may receive the temperature adjusting gas from a gas supply module and eject the temperature adjusting gas. The gas supply module may include a heater heating the temperature adjusting gas and a cooler cooling the temperature adjusting gas, and supply the temperature adjusting gas heated by the heater or supply the temperature adjusting gas cooled by the cooler according to the heating regions based on temperature.

[0021] Alternatively, the chuck temperature adjusting unit may include: a heat insulating plate provided below the substrate chuck; and a nozzle block ejecting a cooling gas as the temperature adjusting gas upward from below the heat insulating plate, the heat insulating plate being composed of a plurality of heat insulating blocks divided to block heat transfer according to the heating regions, and the plurality of heat insulating blocks being selectively removed according to the heating regions based on temperature.

[0022] According to an embodiment of the present invention, there may be provided a substrate processing apparatus including: a process chamber providing a substrate processing space; a substrate chuck supporting a substrate in the substrate processing space, spaced upward from the bottom surface of the substrate processing space, having a heater, and adjusting the temperature of the substrate; a plasma generator generating the plasma in the substrate processing space to perform an ashing process using plasma as a substrate processing process; and a chuck temperature adjusting unit for dividing the substrate chuck into a plurality of heating regions and adjusting the temperature of the substrate chuck according to the heating regions, the chuck temperature adjusting unit including: a heat absorbing plate provided below the substrate chuck, the upper surface of the heat absorbing plate being in contact with the lower surface of the substrate chuck and absorbing heat conducted from the substrate chuck to adjust the temperature of the substrate chuck; a heat insulating plate provided below the heat absorbing plate; and a nozzle block ejecting a cooling gas upward from below the heat insulating plate, the heat absorbing plate being composed of a plurality of heat absorbing blocks divided to absorb the heat according to the heating regions, the heat insulating plate being composed of a plurality of heat insulating blocks divided to block heat transfer according to the heating regions, and the plurality of heat absorbing blocks and the plurality of heat insulating blocks being selectively removed according to the heating regions based on temperature.

[0023] The means for solving the problem will become more specific and clear through the embodiments, drawings, etc. described below. In addition, various means other than those mentioned below can be additionally proposed.

[0024] According to an embodiment of the present invention, the temperature of a specific area of a substrate chuck having a heater can be simply adjusted by using a heat absorption plate, a heat insulation plate, and / or a nozzle block for injecting a cooling gas. Therefore, the temperature deviation of the substrate chuck can be minimized, and further, the substrate can be heated to a uniformly distributed temperature.

[0025] The effects of the invention are not limited thereto, and other effects not mentioned can be clearly understood by those of ordinary skill in the art from this specification and the accompanying drawings. Description of the Drawings

[0026] Figure 1 It is a cross-sectional view showing the structure of a substrate processing apparatus according to an embodiment of the present invention.

[0027] Figure 2 It shows Figure 1 a perspective view of the chuck temperature adjustment unit shown.

[0028] Figures 3 to 5 It is a cross-sectional view showing the operation of a substrate processing apparatus according to an embodiment of the present invention.

[0029] (Description of Reference Numerals)

[0030] 100: Process chamber

[0031] 110: Chamber body

[0032] 111: Substrate processing space

[0033] 120: Exhaust unit

[0034] 200: Substrate chuck

[0035] 220: Heater

[0036] 300: Process gas supply unit

[0037] 400: Heat absorption plate

[0038] 500: Heat insulation plate

[0039] 600: Nozzle block Detailed Description of the Invention

[0040] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those of ordinary skill in the art to which the present invention pertains can easily implement it. However, the present invention can be implemented in various different forms and is not limited to the embodiments described herein.

[0041] When describing embodiments of the present invention, in cases where a specific description of a related well-known function or structure is determined to unnecessarily obscure the gist of the present invention, the specific description thereof is omitted, and parts having similar functions and effects will be denoted by the same reference numerals throughout the drawings.

[0042] At least a part of the terms used in the specification is defined in consideration of its function in the present specification, and thus may be changed according to the intention of the user, operator, convention, etc. For this reason, such terms should be interpreted based on the content throughout the specification. In addition, in the specification, when it is said to include any constituent element, unless otherwise specifically stated to the contrary, this does not exclude other constituent elements, meaning that other constituent elements may also be included. In addition, when it is said that any part is connected (or coupled) to another part, this includes not only the case of direct connection (or coupling), but also the case of indirect connection (or coupling) via other parts.

[0043] On the other hand, in the drawings, the dimensions, shapes, thicknesses of lines, etc. of the constituent elements may be exaggerated slightly for ease of understanding.

[0044] The substrate processing apparatus according to the present invention can be used when performing various substrate processing processes. Embodiments of the present invention will be observed centering on a substrate processing apparatus that uses a circular wafer as the substrate and performs an ashing process as the processing process for the wafer.

[0045] The structure, operation, etc. of the substrate processing apparatus according to an embodiment of the present invention are shown in Figures 1 to 5 .

[0046] The substrate processing apparatus according to an embodiment of the present invention can be configured to perform an ashing process using plasma to remove the photoresist (PR) remaining on the substrate after an etching process.

[0047] Referring to Figure 1 , the substrate processing apparatus according to an embodiment of the present invention includes a process chamber 100, a substrate chuck 200, a process gas supply unit 300, and an electromagnetic field forming unit (plasma source). To perform a substrate processing process, the substrate chuck 200 supports the substrate 5. In addition, the process gas supply unit 300 supplies a process gas, and the electromagnetic field forming unit forms an electromagnetic field to excite the process gas into a plasma state.

[0048] The process chamber 100 is configured to have a substrate processing space 111 that can be blocked from the outside. The substrate 5 can be plasma processed in the substrate processing space 111 during the execution of the substrate processing process. The process chamber 100 includes a chamber body 110. The substrate processing space 111 is formed inside the chamber body 110.

[0049] The chamber body 110 has a substrate access opening that communicates with the substrate processing space 111. The substrate 5 to be processed is carried into the substrate processing space 111 inside the chamber body 110 through the substrate access opening from the outside of the chamber body 110. The processed substrate 5 is carried out of the substrate processing space 111 through the substrate access opening to the outside of the chamber body 110. The substrate access opening is opened and closed by an access opening opening / closing unit.

[0050] The chamber body 110 has an exhaust port that communicates with the substrate processing space 111. The exhaust port is provided on the wall of the chamber body 110. An exhaust unit 120 that performs an exhaust function is connected to the exhaust port. Through the exhaust function of the exhaust unit 120, the substrate processing space 111 can be decompressed. In addition, by-products generated during the execution of the substrate processing process, gases remaining in the substrate processing space 111, etc. can be discharged to the outside.

[0051] A substrate chuck 200 is provided inside the chamber body 110. The substrate chuck 200 supports the substrate 5 in the substrate processing space 111. The substrate chuck 200 is disposed in the lower region of the substrate processing space 111. The substrate chuck 200 is spaced upward from the bottom surface of the substrate processing space 111 by a chuck support member 250. The chuck support member 250 supports the substrate chuck 200. The chuck support member 250 can be provided in a shape that protrudes downward from the central portion of the lower surface of the substrate chuck 200.

[0052] The substrate chuck 200 is formed in a disk shape with a predetermined thickness. The substrate chuck 200 includes a chuck electrode 210 and a heater 220.

[0053] The chuck electrode 210 is embedded in the substrate chuck 200. The chuck power supply 215 is electrically connected to the chuck electrode 210 through the chuck power supply line 216. The chuck power supply 215 includes a DC power supply. The chuck power switch 217 is applied between the chuck electrode 210 and the chuck power supply 215. The chuck power switch 217 can be provided on the chuck power supply line 216. Additionally, the chuck electrode 210 and the chuck power supply 215 can achieve or release electrical connection with each other through the on and off operations of the chuck power switch 217. If the chuck power switch 217 is in the on state, an electrostatic force is generated between the substrate 5 and the chuck electrode 210. During the execution of the substrate processing process, the substrate 5 can be clamped to the substrate chuck 200 due to the electrostatic force thus generated. According to implementation conditions and the like, in addition to the chuck electrode 210 and the chuck power supply module (chuck power supply, chuck power supply line, and power switch), as an alternative engaging module, a type configured to mechanically engage the substrate 5 can be applied.

[0054] The heater 220 is provided inside the substrate chuck 200. The heater 220 can be arranged below the chuck electrode 210. The heater power supply 225 is electrically connected to the heater 220 through the heater power supply line 226. The heater 220 can be configured to generate high-temperature heat against the current from the heater power supply 225. For example, the heater 220 can include a coil formed in a spiral shape. The heater power switch 227 is applied between the heater 220 and the heater power supply 225. The heater power switch 227 can be provided on the heater power supply line 226. The heater 220 and the heater power supply 225 can achieve or release electrical connection with each other through the on and off operations of the heater power switch 227. When the substrate processing process is executed, if the heater power switch 227 is in the on state, heat is generated from the heater 220. The generated heat is provided to the entire substrate chuck 200 and transmitted to the substrate 5 through the substrate chuck 200, and the substrate 5 can be maintained at the temperature required for the substrate processing process through the transmitted heat.

[0055] The process gas supply unit 300 supplies the process gas required for the substrate processing process (ashing process) to the substrate processing space 111 during the execution of the substrate processing process. The process gas supply unit 300 can include a distribution head, a process gas supply source 310, a process gas supply nozzle 320, a process gas supply line, and a flow control valve.

[0056] The distribution head can be disposed on the ceiling side of the chamber body 110 and can be configured to face the substrate chuck 200. The distribution head is configured to include a distribution plate 330 having process gas discharge holes for discharging the process gas downward, and has a buffer space provided to introduce the process gas above the distribution plate 330 and communicate with the process gas discharge holes. The distribution plate 330 can be provided by metal, electrically connected to or grounded by a high-frequency power supply, thereby serving as the upper electrode constituting the electromagnetic field forming unit.

[0057] The process gas supply source 310 can be connected to the process gas supply nozzle 320 through a process gas supply line and can supply the process gas to the process gas supply nozzle 320 at a predetermined pressure. The process gas supply nozzle 320 can be disposed on the ceiling of the chamber body 110, connected to the distribution head, and supply the process gas to the buffer space in the distribution head. The process gas can be discharged and distributed from the buffer space through the process gas discharge holes of the distribution plate 330 to the substrate processing space 111. A flow control valve can be provided on the process gas supply line. The flow rate of the process gas supplied to the shower head successively through the process gas supply line and the process gas supply nozzle 320 can be controlled by the flow control valve.

[0058] The electromagnetic field forming unit and the process gas supply unit 300 together constitute a plasma generator. The electromagnetic field forming unit can generate plasma in a CCP (capacitive coupled plasma) manner by including an upper electrode and a lower electrode configured to face each other vertically. As described, the upper electrode can be provided as the distribution plate 330. As an example, the lower electrode can be provided below the chamber body 110. Alternatively, the electromagnetic field forming unit can be configured to generate plasma in an ICP (inductively coupled plasma) manner and can include an antenna for this purpose.

[0059] The substrate processing apparatus according to an embodiment of the present invention further includes a chuck temperature adjusting unit. The structure and operation of the chuck temperature adjusting unit are shown in Figures 2 to 5 . Refer to Figure 1 and Figure 2 . The chuck temperature adjusting unit includes a heat absorption plate 400, a heat insulation plate 500, and a nozzle block 600. Through the chuck temperature adjusting unit, the temperature of the substrate chuck 200 can be adjusted in each region.

[0060] The heat absorption plate 400 is provided on the lower side of the substrate chuck 200. The upper surface of the heat absorption plate 400 contacts the lower surface of the substrate chuck 200 and is formed in a shape corresponding to the lower surface of the substrate chuck 200. Since the upper surface of the heat absorption plate 400 contacts the lower surface of the substrate chuck 200, it can absorb the heat conducted from the substrate chuck 200 during the execution of the substrate processing process to adjust the temperature of the substrate chuck 200. The heat absorption plate 400 can release the absorbed heat to lower the temperature of the substrate chuck 200. The heat absorption plate 400 can include a material with excellent thermal conductivity. As an example, the heat absorption plate 400 can be a heat sink made of an aluminum material. At this time, the aluminum can be aluminum nitride (AlN).

[0061] The heat absorption plate 400 divides the substrate chuck 200 into a plurality of heating regions, and is configured as a plurality of divided heat absorption blocks 410 to absorb the heat from the substrate chuck 200 in each heating region. Refer to Figure 2 , it can be that the heating regions are set to be arranged along the circumferential direction, and the heat absorption plate 400 is divided into corresponding heating regions where the heat absorption blocks 410 are set and arranged along the circumferential direction. The division form of the heat absorption plate 400 is not limited to this, and various deformations can be made.

[0062] The heat absorption blocks 410 can be selectively removed based on temperature in each set heating region. That is, any one or more of the heat absorption blocks 410 can be selected and removed based on temperature in each set heating region. The heating region (refer to the reference numeral 405 in Figure 4 ) from which the heat absorption block 410 is removed is not directly affected by the heat absorption effect of the conductive heat of the heat absorption block 410, so the temperature can rise.

[0063] The heat insulation plate 500 is disposed on the lower side of the heat absorption plate 400. The heat insulation plate 500 is provided on the lower surface of the heat absorption plate 400 and is formed in a shape corresponding to the lower surface of the substrate chuck 200 that is the same as or similar to that of the heat absorption plate 400. The heat insulation plate 500 can prevent the temperature of the substrate chuck 200 from dropping excessively by suppressing the rapid heat dissipation of the heat absorbed by the heat absorption plate 400 through its heat transfer blocking effect. The heat insulation plate 500 can include a material with excellent heat blocking properties.

[0064] Refer to Figure 2 , the heat insulation plate 500 is composed of a plurality of heat insulation blocks 510 divided to block heat transfer according to the set heating regions.

[0065] The nozzle block 600 is provided on the bottom surface side of the substrate processing space 111 and is spaced downward from the heat insulation plate 500, and is configured to face the heat insulation plate 500. The nozzle block 600 sprays the cooling gas upward toward the heat insulation plate 500. For this purpose, nozzle holes 10 are formed across the whole on the upper surface of the nozzle block 600. The nozzle block 600 is formed in a shape corresponding to the lower surface of the substrate chuck 200 that is the same as or similar to that of the heat insulation plate 500.

[0066] The heat insulation block 510 can be selectively removed based on temperature in each set heating area. That is, any one or more of the selected heat insulation blocks 510 can be removed based on temperature in each set heating area. The heating area where the heat insulation block 510 is removed (refer to the reference numeral 505 in Figure 5 the attached drawing) can supply cooling gas from the nozzle block 600, thereby reducing the temperature.

[0067] Refer to Figure 1 , the nozzle block 600 can receive the supply of an inert gas (for example, nitrogen gas) from the gas supply module as cooling gas and spray it. The gas supply module includes a cooler (not shown), a cooling gas supply source 651, a cooling gas supply line 652, and an on-off valve 653.

[0068] The cooler cools the cooling gas to a set temperature. The cooler can be provided in the cooling gas supply source 651 to cool the cooling gas in the cooling gas supply source 651, or provided on the cooling gas supply line 652 to cool the cooling gas flowing along the cooling gas supply line 652. The cooling gas supply source 651 is connected to the nozzle block 600 through the cooling gas supply line 652. Such a cooling gas supply source 651 can be configured to provide a storage space for storing cooling gas inside, and supply the stored cooling gas to the nozzle block 600 at a set pressure through the cooling gas supply line 652. The on-off valve 653 of the nozzle block 600 can be provided on the cooling gas supply line 652, open and close the cooling gas supply line 652, and control the flow rate of the cooling gas flowing along the cooling gas supply line 652.

[0069] The cooling gas sprayed upward from the nozzle block 600 can collide with the lower surface of the heat insulation plate 500 and change the flow direction to the side wall of the chamber body 110. The exhaust port can be configured at a height where the cooling gas toward the side wall of the chamber body 110 can be smoothly discharged. The cooling gas toward the side wall of the chamber body 110 and discharged through the exhaust port can induce the discharge of by-products generated during the execution of the substrate processing process through the exhaust port, thereby suppressing the accumulation of by-products on the bottom surface of the substrate processing space 111.

[0070] Although not shown, the substrate processing apparatus according to an embodiment of the present invention further includes a chuck temperature detector for detecting the temperature according to a set heating area. For example, the chuck temperature detector can include a thermocouple.

[0071] Through the chuck temperature detector, the temperature distribution of the substrate chuck 200 can be grasped based on the temperature detected according to the set heating area.

[0072] If there is a heating area with a relatively low temperature in the set heating area, which causes a temperature deviation on the substrate chuck 200, the temperature of the relatively low-temperature heating area can be increased by removing the heat-absorbing block 410 that absorbs heat from the relatively low-temperature heating area (refer to Figure 4 ) to uniformly maintain the temperature distribution of the substrate chuck 200.

[0073] Conversely, if there is a heating area with a relatively high temperature in the set heating area, which causes a temperature deviation on the substrate chuck 200, the heat-absorbing block 410 that absorbs heat and the corresponding heat-insulating block 510 can be removed together from the relatively high-temperature heating area, and the relatively high-temperature heating area can be cooled by a cooling gas to lower the temperature (refer to Figure 5 ) to uniformly maintain the temperature distribution of the substrate chuck 200.

[0074] On the other hand, if there is no heating area that causes a temperature deviation on the substrate chuck 200 in the set heating area, as shown in Figure 3 , the chuck temperature adjustment unit can operate without removing the heat-absorbing block 410 and the heat-insulating block 510 and in a state where the nozzle block 600 is operating.

[0075] The present invention has been described above, but the present invention is not limited by the disclosed embodiments and the accompanying drawings, and various modifications can be made by those of ordinary skill in the art without departing from the technical concept of the present invention. In addition, the technical concepts described in the embodiments of the present invention can also be implemented independently, or two or more of them can be combined with each other.

Claims

1. A substrate processing device, characterized in that: include: A process chamber provides a substrate processing space; a substrate chuck that supports a substrate in the substrate processing space, has a heater, and adjusts the temperature of the substrate; as well as a heat absorbing plate provided under the substrate chuck and absorbing heat from the substrate chuck to adjust the temperature of the substrate chuck, The heat absorbing plate is composed of a plurality of heat absorbing blocks which are divided into a plurality of heating areas so as to divide the substrate chuck into the plurality of heating areas and absorb the heat according to the heating areas. The plurality of heat absorbing blocks are selectively removed based on temperature according to the heating area.

2. The substrate processing device according to claim 1, characterized in that: The substrate processing device further comprises: A heat insulation plate is provided below the heat absorbing plate, The heat insulation board is composed of a plurality of heat insulation blocks divided into blocks for blocking heat transfer according to the heating area. A plurality of the thermal insulation blocks are selectively removed based on temperature according to the heating area.

3. The substrate processing device according to claim 2, characterized in that: The substrate processing device further comprises: The nozzle block sprays cooling gas from the bottom to the top of the heat shield.

4. The substrate processing device according to claim 3, characterized in that: The substrate chuck is spaced upward from the bottom surface of the substrate processing space, The nozzle block is disposed on the bottom surface side of the substrate processing space.

5. The substrate processing device according to claim 3, characterized in that: The cooling gas ejected upward from the nozzle block collides with the bottom surface of the heat shield plate and flows toward the side wall of the process chamber. The process chamber is provided with an exhaust port on a side wall.

6. The substrate processing device according to claim 3, characterized in that: The cooling gas is an inert gas.

7. The substrate processing apparatus according to claim 1, wherein: The substrate processing device further comprises: The chuck temperature detector detects the temperature of the heating area.

8. The substrate processing apparatus according to claim 1, wherein: The plurality of heat absorbing blocks are heat sinks.

9. The substrate processing apparatus according to claim 1, wherein: The substrate processing apparatus performs an ashing process as a substrate processing process.

10. The substrate processing apparatus according to claim 1, wherein: The plurality of heat absorbing blocks are in contact with the lower surface of the substrate chuck to absorb the heat conducted from the substrate chuck.

11. A substrate processing device, characterized in that: include: A process chamber provides a substrate processing space; a substrate chuck that supports a substrate in the substrate processing space, has a heater, and adjusts the temperature of the substrate; as well as The chuck temperature adjustment unit divides the substrate chuck into a plurality of heating regions and adjusts the temperature of the substrate chuck according to the heating regions using a temperature adjustment gas.

12. The substrate processing apparatus according to claim 11, characterized in that: The chuck temperature adjustment unit comprises: The nozzle block sprays the temperature regulating gas from the bottom to the top of the substrate chuck, The nozzle block is configured to be able to inject the temperature regulating gas according to the heating area.

13. The substrate processing apparatus according to claim 12, wherein: The nozzle block receives the temperature regulating gas from the gas supply module and sprays the temperature regulating gas. The gas supply module includes a heater that heats the temperature-adjusting gas and a cooler that cools the temperature-adjusting gas, and supplies the temperature-adjusting gas heated by the heater or supplies the temperature-adjusting gas cooled by the cooler based on the temperature according to the heating region.

14. The substrate processing apparatus according to claim 11, wherein: The temperature regulating gas is a cooling gas.

15. The substrate processing apparatus according to claim 14, wherein: The chuck temperature adjustment unit comprises: a heat shield provided on the underside of the substrate chuck; and A nozzle block is used to spray the cooling gas from the bottom to the top of the heat shield. The heat insulation board is composed of a plurality of heat insulation blocks divided into blocks for blocking heat transfer according to the heating area. A plurality of the thermal insulation blocks are selectively removed based on temperature according to the heating area.

16. The substrate processing apparatus according to claim 14, wherein: The cooling gas is nitrogen.

17. The substrate processing apparatus according to claim 11, wherein: The substrate processing device further comprises: The chuck temperature detector detects the temperature of the heating area.

18. The substrate processing apparatus according to claim 11, wherein: The substrate processing apparatus performs an ashing process as a substrate processing process.

19. The substrate processing apparatus according to claim 15, wherein: The cooling gas ejected upward from the nozzle block collides with the bottom surface of the heat shield plate and flows toward the side wall of the process chamber. The process chamber is provided with an exhaust port on a side wall.

20. A substrate processing device, comprising: A process chamber provides a substrate processing space; a substrate chuck that supports a substrate in the substrate processing space, is spaced upward from the bottom surface of the substrate processing space, has a heater, and adjusts the temperature of the substrate; a plasma generator for generating the plasma in the substrate processing space in order to perform an ashing process using plasma as a substrate processing process; and a chuck temperature adjustment unit, for dividing the substrate chuck into a plurality of heating areas and adjusting the temperature of the substrate chuck according to the heating areas, The chuck temperature adjustment unit includes: a heat absorbing plate provided at the lower side of the substrate chuck, the upper side of the heat absorbing plate contacts the lower side of the substrate chuck and absorbs the heat conducted from the substrate chuck to adjust the temperature of the substrate chuck; a heat insulating plate provided at the lower side of the heat absorbing plate; and a nozzle block for spraying cooling gas from the lower side of the heat insulating plate to the upper side. The heat absorbing plate is composed of a plurality of heat absorbing blocks divided into the heating areas to absorb the heat, and the heat insulating plate is composed of a plurality of heat insulating blocks divided into the heating areas to block heat transfer, and the plurality of heat absorbing blocks and the plurality of heat insulating blocks are selectively removed based on temperature according to the heating areas.

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