Integrated device and method of on-chip antenna and pulse source based on heterogeneous material 3D packaging integration

Abstract

The application discloses a 3D packaging integrated on-chip antenna and pulse source integrated device and method based on a heterogeneous material, relates to the technical field of antennas, and comprises a base substrate, an upper surface of the base substrate being used for mounting a radiation structure, a photoconductive substrate, an upper surface of the photoconductive substrate being used for mounting an excitation structure, an interconnection structure being used for realizing electrical connection between the radiation structure and the excitation structure, a through hole being formed on the base substrate through a TSV or TGV process and penetrating through the whole base substrate, a conductive filling material being filled in the through hole, a solder ball being arranged on a lower surface of the base substrate at the position of the through hole and being made of a conductive brazing metal, and GSG electrodes being arranged on the upper surface of the photoconductive substrate; the device adopts a 3D packaging technology, integrates the radiation structure and the excitation structure on the same chip, breaks through the frequency limit of 110GHz of a traditional electrical pulse source, has the advantages of high-frequency performance, low dielectric loss, high integration degree and the like, and is suitable for fields of wireless communication, radar ranging systems and the like.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of antennas, in particular to an on-chip antenna and pulse source integrated device and method based on heterogeneous material 3D packaging integration. BACKGROUND

[0002] As a classic passive device, antennas are widely used in various fields, and their main function is to realize the mutual conversion between high-frequency alternating current and spatial electromagnetic wave. With the advent of the big data era, people's demand for high-speed data transmission is increasing, and the frequency band of wireless communication is also gradually increasing. At present, there are mature passive antenna design schemes in the industry, which support the design of passive antennas in the millimeter wave band. However, due to the leakage effect caused by size miniaturization, the working frequency of the electrical pulse source is limited to below 110GHz, which loses the support of high-frequency pulse sources, and high-frequency passive antennas are like a castle in the air, which further limits the development of high-frequency wireless communication.

[0003] To break this bottleneck, new high-frequency electromagnetic wave emitting devices have been widely studied, such as photoconductive antennas, spin terahertz devices, and photodiode antennas. Compared with traditional passive antennas, these new devices do not need external current source excitation, so they break through the frequency limit of the current pulse source. Under the excitation of laser, these devices use the photoelectric conversion characteristics of the substrate material to generate alternating current, and then form electromagnetic wave radiation. Recent studies have shown that such devices can produce terahertz frequency electromagnetic wave radiation. However, this type of device also faces many problems, such as difficulty in improving power, limited modulation methods, and inability to serve as a receiving antenna.

[0004] Existing radiating antenna devices are divided into two categories: active devices and passive devices. The advantages of passive devices are mature design schemes and more modulation methods, but the disadvantage is that they are limited by the 110GHz frequency bottleneck of electrical pulses; the advantages of active devices are that the frequency can break through the limitation of electrical pulse sources, but the disadvantages are limited radiation power, few modulation methods, and inability to serve as a receiving module. Therefore, the specific form of the next generation of millimeter wave transceiver systems still needs to be explored. SUMMARY

[0005] The present application provides an on-chip antenna and pulse source integrated device and method based on heterogeneous material 3D packaging integration, to solve the limitations of high-frequency electromagnetic wave radiation and receiving devices in the prior art, realize the radiation and reception of high-frequency electromagnetic waves above 110GHz, and meet the demand for high-frequency electromagnetic waves in the field of wireless communication and radar ranging systems.

[0006] To achieve the above purpose, the present application provides the following technical scheme: an on-chip antenna and pulse source integrated device based on heterogeneous material 3D packaging integration, comprising:

[0007] Base substrate: made of low dielectric loss material, the upper surface of the base substrate is used to install the radiation structure, which is used to emit and receive high-frequency electromagnetic waves;

[0008] Photoconductive substrate: made of photoconductive material, the upper surface of the photoconductive substrate is used to install the excitation structure, which is used to generate high-frequency alternating current under laser excitation;

[0009] Interconnection structure: for realizing the electrical connection between the radiation structure and the excitation structure, the interconnection structure includes:

[0010] Through-hole: opened on the base substrate by TSV or TGV process, through the entire base substrate;

[0011] Conductive filling material: filled in the through-hole, formed by electroplating process;

[0012] Solder ball: provided on the lower surface of the base substrate at the through-hole position, made of conductive filler metal;

[0013] GSG electrode: provided on the upper surface of the photoconductive substrate, aligned and welded with the solder ball, realizing the electrical interconnection between the base substrate and the photoconductive substrate.

[0014] Further, the base substrate is any one of silicon, glass or PCB material; the surface flatness of the base substrate is treated by polishing process.

[0015] Further, the photoconductive substrate is any one of GaAs or LnP material.

[0016] Further, the conductive material filled in the through-hole is any one of copper, aluminum or gold.

[0017] Further, the material of the solder ball is conductive filler metal.

[0018] Further, the integrated device can realize the radiation and reception of high-frequency electromagnetic waves above 110GHz.

[0019] Further, the radiation structure includes microstrip antenna, patch antenna or horn antenna, and the design frequency range is above 110GHz.

[0020] Further, the excitation structure is a photoconductive antenna, which includes a photoconductive switch and a transmission line, and the photoconductive switch generates high-frequency alternating current under laser excitation.

[0021] Further, the radiation structure and excitation structure are optimized and designed by simulation design software HFSS to realize the radiation and reception of high-frequency electromagnetic waves.

[0022] The preparation method of the on-chip antenna and pulse source integrated device based on 3D packaging integration of heterogeneous materials comprises the following steps:

[0023] A base substrate made of a low dielectric loss material and a photoconductive substrate made of a photoconductive material are prepared;

[0024] A through hole is formed on the base substrate by a TSV or TGV process, and a conductive material is filled into the through hole by an electroplating process, followed by polishing to ensure the flatness of the surface of the base substrate;

[0025] A radiation structure for emitting and receiving high-frequency electromagnetic waves is manufactured on the surface of the base substrate;

[0026] An excitation structure for generating high-frequency alternating current under laser excitation is manufactured on the surface of the photoconductive substrate;

[0027] A solder ball made of a conductive soldering metal is arranged on the lower surface of the base substrate at the position of the through hole;

[0028] The base substrate is aligned with the photoconductive substrate, the solder ball corresponds to the GSG electrode on the upper surface of the photoconductive substrate, and welding is achieved by a bonding process to complete the electrical interconnection between the base substrate and the photoconductive substrate;

[0029] The integrated device after packaging is tested and optimized.

[0030] Compared with the prior art, the on-chip antenna and pulse source integrated device and method based on 3D packaging integration of heterogeneous materials have the following beneficial effects:

[0031] The on-chip antenna and pulse source integrated device and method based on 3D packaging integration of heterogeneous materials, by means of heterogeneous integration, break through the limitations of photoconductive substrate materials and integrate the high-frequency response characteristics of photoconductive substrates with low dielectric loss substrates such as glass, realize the radiation and reception of high-frequency electromagnetic waves above 110GHz, and meet the needs of high-frequency wireless communication and radar ranging systems; low dielectric loss base substrate materials are used, and the interconnection of different substrate materials is realized by TSV / TGV process and bonding packaging technology, which effectively reduces the transmission loss of high-frequency signals and improves the power efficiency of the device; the high-frequency pulse source and the millimeter wave antenna are packaged on the same chip, which reduces the complexity and volume of the system and improves the reliability and stability of the system; combined with the mature design scheme of passive antennas and the high-frequency characteristics of active devices, the integrated device of the application not only has a higher frequency, but also inherits the multiple modulation methods of passive antennas, enhancing the functionality and flexibility of the system. BRIEF DESCRIPTION OF DRAWINGS

[0032] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the embodiments will be briefly introduced. Obviously, the drawings in the following description only constitute some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative effort on the basis of these drawings.

[0033] Figure 1 A schematic diagram of a base substrate opening structure of a device integrated with an on-chip antenna and a pulse source based on 3D packaging integration of heterogeneous materials;

[0034] Figure 2 A schematic diagram of interconnection alignment of a radiation antenna and a device on a photoconductive substrate below the substrate of a device integrated with an on-chip antenna and a pulse source based on 3D packaging integration of heterogeneous materials;

[0035] Figure 3 A schematic diagram of electrode bonding of a device integrated with an on-chip antenna and a pulse source based on 3D packaging integration of heterogeneous materials;

[0036] Figure 4 A schematic diagram of manufacturing a radiation structure device on a base substrate of a device integrated with an on-chip antenna and a pulse source based on 3D packaging integration of heterogeneous materials;

[0037] Figure 5 A schematic diagram of manufacturing an excitation structure device on a surface of a photoconductive substrate of a device integrated with an on-chip antenna and a pulse source based on 3D packaging integration of heterogeneous materials.

[0038] In the figure: 1, excitation structure; 2, on-chip transmission structure; 3, via hole transmission structure; 4, radiation structure. DETAILED DESCRIPTION

[0039] In order to make the above objectives, features and advantages of the present application more apparent and comprehensible, the specific embodiments of the present application will be described in detail below with reference to the accompanying drawings.

[0040] In the following description, a lot of specific details are set forth in order to provide a thorough understanding of the present application, but the present application can also be implemented in other ways different from the description, and those skilled in the art can make similar generalizations without departing from the concept of the present application, so the present application is not limited to the specific embodiments disclosed below.

[0041] Secondly, the "one embodiment" or "embodiment" referred to herein means that the specific features, structures or characteristics can be included in at least one implementation of the present application. "In one embodiment" appearing in different places in the specification does not mean the same embodiment, nor is the embodiment independent or selectively exclusive of other embodiments.

[0042] Please refer toFigures 1-5 The application discloses a chip-on antenna and pulse source integrated device based on heterogeneous material 3D packaging integration, which comprises a base substrate made of a low dielectric loss material, an upper surface of the base substrate being used for mounting a radiation structure 4 used for emitting and receiving high-frequency electromagnetic waves, a photoconductive substrate made of a photoconductive material, an upper surface of the photoconductive substrate being used for mounting an excitation structure 1 used for generating high-frequency alternating current under laser excitation, and an interconnection structure used for realizing electrical connection between the radiation structure 4 and the excitation structure 1, the interconnection structure comprising a through hole formed on the base substrate by a TSV (Through-Silicon Via) or TGV (Through-Glass Via) process and penetrating through the whole base substrate, a conductive filling material filled in the through hole and formed by an electroplating process, and a solder ball made of a conductive brazing metal and arranged on a lower surface of the base substrate at a position of the through hole; a GSG (Ground-Signal-Ground) electrode is arranged on the upper surface of the photoconductive substrate and is aligned and welded with the solder ball, so as to realize electrical interconnection between the base substrate and the photoconductive substrate; the solder ball and the GSG electrode are aligned and welded by using a bonding process, and the bonding process is hot-press bonding or ultrasonic bonding.

[0043] The chip-on antenna and pulse source integrated device based on heterogeneous material 3D packaging integration breaks through the frequency limitation of a traditional electrical pulse source in a heterogeneous integrated manner, realizes radiation and reception of high-frequency electromagnetic waves above 110 GHz, and meets the needs of high-frequency wireless communication and radar ranging systems; low-dielectric-loss base substrate material is adopted, and different substrate materials are interconnected by a TSV / TGV process and a bonding packaging technology, so that the transmission loss of high-frequency signals is effectively reduced, and the power efficiency of the device is improved; the high-frequency pulse source and the millimeter wave antenna are packaged on the same chip, the complexity and volume of the system are reduced, and the reliability and stability of the system are improved; in combination with a mature design scheme of a passive antenna and high-frequency characteristics of an active device, the integrated device of the application not only has a higher frequency, but also inherits multiple modulation methods of the passive antenna, and the functionality and flexibility of the system are enhanced.

[0044] Specifically, the base substrate is any one of silicon, glass or PCB material; the surface flatness of the base substrate is treated by a polishing process to meet the requirements of integrated circuit processing technology; the conductive material filled in the through hole is any one of copper, aluminum or gold; the material of the solder ball is a conductive brazing metal, and the conductive brazing metal includes but is not limited to tin, silver or an alloy thereof.

[0045] Specifically, the photoconductive substrate is any one of GaAs or LnP material;

[0046] Specifically, the integrated device can realize the radiation and reception of high-frequency electromagnetic waves above 110GHz.

[0047] Specifically, the radiation structure 4 includes a microstrip antenna, a patch antenna or a horn antenna, and the design frequency range is above 110GHz; the excitation structure 1 is a photoconductive antenna, and the structure includes a photoconductive switch and a transmission line; the photoconductive switch generates high-frequency alternating current under laser excitation; and the radiation structure 4 and the excitation structure 1 are optimized and designed by using simulation design software HFSS to realize the radiation and reception functions of high-frequency electromagnetic waves.

[0048] The present application aims to solve the problems of high-frequency electromagnetic wave transmitting and receiving devices in the prior art, and proposes a chip-on antenna and pulse source integrated device based on heterogeneous material 3D packaging integration, which effectively avoids the problem of high dielectric loss of traditional photoconductive substrates by heterogeneously integrating high-frequency pulse sources and millimeter wave antennas, and simultaneously realizes the radiation and reception functions of high-frequency electromagnetic waves, has high integration degree and low signal transmission loss, and the specific technical means are as follows:

[0049] Preparation of base substrate and photoconductive substrate: a silicon substrate with low dielectric loss is selected as the base substrate, and GaAs is used as the photoconductive substrate. The base substrate and the photoconductive substrate are pretreated by cleaning, polishing and other processes to ensure that the surface is flat and clean.

[0050] Making and filling of through holes: TSV technology is used to open through holes in the silicon base substrate, and the hole diameter is determined according to the design requirements. Electroplating process is used to fill conductive materials such as copper or gold into the through holes, and chemical mechanical polishing (CMP) process is combined to make the surface of the base substrate reach the flatness required for integrated circuit processing.

[0051] Manufacture of radiation structure 4 and excitation structure 1: the radiation structure 4 is manufactured on the upper surface of the base substrate using micro-nano processing technology, and the structure is designed according to the required radiation frequency and directional diagram. The excitation structure 1 is manufactured on the upper surface of the photoconductive substrate, and photoetching and etching processes are used to form the photoconductive antenna structure.

[0052] Setting and bonding of interconnection structure: solder balls are set on the lower surface of the through hole position of the base substrate, and the material is conductive soldering metal. The base substrate and the photoconductive substrate are aligned, and the solder balls at the through hole position of the base substrate correspond to the GSG electrodes on the upper surface of the photoconductive substrate. Hot-press bonding or ultrasonic bonding process is used to realize the welding of solder balls and GSG electrodes, and the interconnection of the base substrate and the photoconductive substrate is completed.

[0053] Performance test and optimization: the performance of the completed integrated device is tested, including the measurement of frequency response, radiation power, receiving sensitivity and other indicators. According to the test results, the device structure is optimized and adjusted by using simulation design software HFSS to further improve the performance of the device.

[0054] The technical effects of the present application are as follows:

[0055] Breakthrough frequency limit: By heterogeneously integrating a high-frequency pulse source with a millimeter wave antenna, high dielectric loss caused by the high dielectric constant of the photoconductive substrate is avoided, and radiation and reception of high-frequency electromagnetic waves above 110 GHz are realized, breaking the frequency limit of traditional electrical pulse sources.

[0056] Improve power and performance: Solve the problem of high transmission loss of electrical signals between heterogeneous devices, meet the power demand in actual use, and improve the performance of high-frequency electromagnetic wave radiation and reception.

[0057] Easy to prepare and integrate: Using 2.5D, 3D packaging and simulation design software HFSS for design, combined with TSV / TGV process, electroplating process and bonding process, etc. Advanced manufacturing technology, realizing the integration of high-frequency pulse source and passive antenna, easy to mass production and integrated application.

[0058] Wide range of applications: The integrated device can be widely used in wireless communication, radar ranging and other fields, providing strong support for the development of high-frequency wireless communication.

[0059] The preparation method of the on-chip antenna and pulse source integrated device based on 3D packaging integration of heterogeneous materials, the method comprises the following steps:

[0060] Prepare the base substrate and the photoconductive substrate, the base substrate is made of low dielectric loss material, and the photoconductive substrate is made of photoconductive material;

[0061] A through hole is opened on the base substrate by TSV or TGV process, and a conductive material is filled into the through hole by electroplating process, and then polished to ensure the flatness of the surface of the base substrate;

[0062] Manufacture the radiation structure 4 on the upper surface of the base substrate, which is used for emitting and receiving high-frequency electromagnetic waves;

[0063] Manufacture the excitation structure 1 on the upper surface of the photoconductive substrate, which is used for generating high-frequency alternating current under laser excitation;

[0064] Set a solder ball on the lower surface of the through hole of the base substrate, the solder ball is made of conductive soldering metal;

[0065] Align the base substrate with the photoconductive substrate, make the solder ball correspond to the GSG electrode on the upper surface of the photoconductive substrate, and realize welding by bonding process, complete the electrical interconnection between the base substrate and the photoconductive substrate;

[0066] Test and optimize the performance of the completed integrated device.

[0067] The present application overcomes the problems existing in the 3D packaging integration technology of heterogeneous materials, and realizes a preparation technology of an on-chip antenna-pulse source integrated device with low cost, high yield, high reliability and easy mass production.

[0068] The bonding packaging technology is adopted to integrate the antenna and the pulse source on the same surface, which simplifies the structure and reduces the manufacturing cost; the alignment welding of the solder ball on the lower surface of the through hole and the GSS electrode on the upper surface of the photoconductive substrate effectively solves the problems of interface connection and signal transmission, and improves the reliability and consistency.

[0069] The TSV / TGV process accurately prevents the perforation of the substrate, ensuring the reliability of the device; the filling and polishing process of the conductive welding metal realizes the flatness requirement of the substrate surface, ensuring the yield of the device; the bonding process ensures the stable connection between the devices, improving the reliability and consistency of the integrated device.

[0070] In summary, the on-chip antenna-pulse source integrated device and method based on the 3D packaging integration of heterogeneous materials have the following advantages: high-frequency performance: through the 3D packaging integration technology, the radiation and reception of high-frequency electromagnetic waves are realized, breaking through the frequency limit of 110GHz of the traditional electrical pulse source; low dielectric loss: silicon or glass with low dielectric loss is used as the base substrate, reducing the transmission loss of high-frequency signals; high integration: through the 3D packaging integration of heterogeneous materials, high-density integration of on-chip antennas and pulse sources is realized, improving the overall performance of the device; easy to manufacture: mature TSV / TGV process and bonding process are adopted, which is easy to mass produce.

[0071] It should be understood that various parts of the present application can be realized by hardware, software, firmware or a combination thereof. In the above embodiments, a plurality of steps or methods can be realized by software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if realized by hardware, and as in another embodiment, it can be realized by any one or a combination of the following technologies known in the art: discrete logic circuit with logic gate circuit for implementing logic function on data signal, application specific integrated circuit with suitable combination logic gate circuit, programmable gate array (PGA), field programmable gate array (FPGA) and the like.

[0072] It should be noted that the above examples are only used to illustrate the technical solutions of the present application and not to limit it. Although the present application has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the present application can be modified or equivalently replaced without departing from the spirit and scope of the present application, which should be covered in the scope of the claims of the present application.

Claims

1. An on-chip antenna and pulsed source integrated device based on heterogeneous material 3D package integration, characterized in that: include: Substrate: Made of a low dielectric loss material, the upper surface of the substrate is used to mount a radiating structure for emitting and receiving high-frequency electromagnetic waves; Photoconductive substrate: made of photoconductive material, the upper surface of the photoconductive substrate is used to mount an excitation structure, the excitation structure is used to generate a high-frequency alternating current under laser excitation; Interconnection structure: used to realize the electrical connection between the radiation structure and the excitation structure, the interconnection structure includes: Through-hole: A hole is formed on the substrate using TSV or TGV technology, penetrating the entire substrate; Conductive filler material: formed by electroplating to fill the through holes; Solder ball: disposed on the lower surface of the substrate at the location of the through hole, and made of conductive soldering metal; GSG electrode: disposed on the upper surface of the photoconductive substrate, aligned and welded with the solder ball to realize electrical interconnection between the base substrate and the photoconductive substrate; The substrate and the photoconductive substrate are bonded via heterogeneous wafer bonding. The TSV / TGV through-hole, conductive filler material, solder balls and GSG electrodes together form a 3D interconnect system with continuous impedance and common ground isolation, so as to realize low-loss bidirectional signal transmission of the radiation structure and the excitation structure in the frequency band above 110 GHz. The radiation structure and the excitation structure are optimized by simulation design software HFSS to realize the radiation and reception functions of high-frequency electromagnetic waves.

2. The heterogeneous material based 3D package integrated on-chip antenna and pulse source integrated device of claim 1, wherein: The substrate is any one of silicon, glass, or PCB material; the surface flatness of the substrate is achieved through a polishing process.

3. The heterogeneous material based 3D package integrated on-chip antenna and pulse source integrated device of claim 1, wherein: The photoconductive substrate is either GaAs or LnP material.

4. The heterogeneous material based 3D package integrated on-chip antenna and pulse source integrated device of claim 1, wherein: The conductive material filling the through hole is any one of copper, aluminum, or gold.

5. The heterogeneous material based 3D package integrated on-chip antenna and pulse source integrated device of claim 1, wherein: The welding ball is made of conductive flux metal.

6. The heterogeneous material based 3D package integrated on-chip antenna and pulse source integrated device of claim 1, wherein: The integrated device is capable of radiating and receiving high-frequency electromagnetic waves above 110 GHz.

7. The heterogeneous material based 3D package integrated on-chip antenna and pulse source integrated device of claim 1, wherein: The radiating structure includes a microstrip antenna, patch antenna, or horn antenna, with a design frequency range of 110 GHz or higher.

8. The heterogeneous material based 3D package integrated on-chip antenna and pulse source integrated device of claim 1, wherein: The excitation structure is a photoconductive antenna, which includes a photoconductive switch and a transmission line. The photoconductive switch generates a high-frequency alternating current under laser excitation.

9. The method of claim 1-8, wherein the method further comprises: The method includes the following steps: A substrate and a photoconductive substrate are prepared, wherein the substrate is made of a low dielectric loss material and the photoconductive substrate is made of a photoconductive material; Through holes are formed on the substrate using TSV or TGV processes, and conductive material is filled into the through holes using an electroplating process. Then, polishing is performed to ensure that the substrate surface is flat. A radiating structure is fabricated on the upper surface of the substrate, the radiating structure being used to emit and receive high-frequency electromagnetic waves; An excitation structure is fabricated on the upper surface of the photoconductive substrate, the excitation structure being used to generate a high-frequency alternating current under laser excitation; Solder balls are disposed on the lower surface of the substrate at the location of the through hole, and the solder balls are made of conductive flux metal; The base substrate and the photoconductive substrate are aligned so that the solder balls correspond to the GSG electrodes on the upper surface of the photoconductive substrate, and the bonding process is used to complete the electrical interconnection between the base substrate and the photoconductive substrate. Perform performance testing and optimization on the packaged integrated device.

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