Diode voltage-sharing three-dimensional compensation device, three-dimensional compensation method and high-voltage generator

Abstract

The invention relates to a diode voltage-sharing three-dimensional compensation device, a three-dimensional compensation method and a high-voltage generator. The three-dimensional compensation device comprises a conductive structure; the three-dimensional compensation device sleeves a circuit to be compensated; the to-be-compensated circuit comprises a plurality of series diodes, and a gap is arranged between the conductive structure and the plurality of series diodes; and the conductive structure forms a compensation capacitor with the plurality of serially-connected diodes to perform voltage-sharing compensation on the plurality of serially-connected diodes, and the conductive structure is used for enabling the plurality of serially-connected diodes to be subjected to voltage sharing. By adopting the three-dimensional compensation device provided by the invention, safe, accurate and reliable compensation can be carried out on the plurality of serially connected diodes in the to-be-compensated circuit under the condition of ensuring reasonable design of the plurality of serially connected diodes, so that the voltage distribution of each serially connected diode is equalized.

Description

Technical Field

[0001] The present application relates to the field of circuit technology, and in particular to a three-dimensional compensation device for diode voltage balancing, a three-dimensional compensation method and a high-voltage generator. Background Art

[0002] With the development of high-voltage power supplies, boost circuits are often used to boost input voltages in high-frequency and high-voltage circuits. The boost circuit includes a transformer and multiple diodes connected in series. However, due to the presence of parasitic capacitance, multiple diodes connected in series will experience voltage imbalance, which will lead to damage to the diodes.

[0003] Therefore, how to balance the voltage of multiple diodes connected in series while ensuring that the designs of multiple diodes connected in series are reasonable has become a technical problem that needs to be solved urgently in current high-frequency and high-voltage circuits. Summary of the invention

[0004] Based on this, it is necessary to provide a three-dimensional compensation device, a three-dimensional compensation method and a high-voltage generator for diode voltage equalization in response to the above-mentioned technical problems, which can balance the voltage of multiple diodes connected in series while ensuring that the design of multiple diodes connected in series is reasonable, that is, it can safely and effectively adjust the voltage distribution of each diode in the multi-series diode circuit without affecting the device selection and circuit layout in the original circuit design, reduce the risk of diode damage, and improve the reliability of the high-voltage power supply device.

[0005] In a first aspect, the present application provides a three-dimensional compensation device for diode voltage balancing, the three-dimensional compensation device comprising a conductive structure; the three-dimensional compensation device is sleeved on a circuit to be compensated;

[0006] The circuit to be compensated includes a plurality of diodes in series, and a gap is provided between the conductive structure and the plurality of diodes in series;

[0007] The conductive structure forms a compensation capacitor with the multiple series-connected diodes to perform voltage balancing compensation on the multiple series-connected diodes. The conductive structure is used to balance the voltage of the multiple series-connected diodes.

[0008] In one of the embodiments, the three-dimensional compensation device further comprises: at least one dielectric layer, the dielectric layer being arranged between the conductive structure and the circuit to be compensated;

[0009] The dielectric layer has a dielectric constant, and the size of the compensation capacitor is adjusted by designing at least one of the shape, size or material of the dielectric layer.

[0010] In one embodiment, the three-dimensional compensation device further comprises: at least one insulating layer; the insulating layer is arranged on the inner layer and / or the outer layer of the conductive structure;

[0011] The insulating layer is used to insulate the three-dimensional compensation device from the circuit to be compensated.

[0012] In one embodiment, the conductive structure includes a first conductive layer and a second conductive layer, and the first conductive layer is sleeved on the second conductive layer;

[0013] A dielectric layer is disposed between the first conductive layer and the second conductive layer.

[0014] In one embodiment, the conductive structure includes a first electrode plate and / or a second electrode plate. The first electrode plate is disposed above the circuit to be compensated, and the second electrode plate is disposed below the circuit to be compensated.

[0015] In one embodiment, the conductive structure includes any one of a square shape, a circular shape, a mesh shape, or a strip shape.

[0016] In one embodiment, the three-dimensional compensation device is connected to a secondary winding corresponding to the circuit to be compensated, and the secondary winding is disposed in a transformer.

[0017] In a second aspect, the present application provides a three-dimensional compensation method for diode voltage equalization. The method is applied to the three-dimensional compensation device for diode voltage equalization according to any one of the first aspects. The method includes:

[0018] Sleeving the three-dimensional compensation device on the circuit to be compensated;

[0019] According to the magnitude of the compensation capacitance required by the plurality of series diodes in the circuit to be compensated, adjusting the interval between the conductive structure and the plurality of series diodes;

[0020] The conductive structure and the plurality of series diodes form a compensation capacitance to perform voltage equalization compensation on the plurality of series diodes.

[0021] In one embodiment, the method further includes:

[0022] In the case that the current compensation capacitance of the three-dimensional compensation device does not meet the preset compensation capacitance magnitude, adding at least one dielectric layer between the conductive structure and the circuit to be compensated;

[0023] Adjusting the magnitude of the compensation capacitance according to at least one of the shape, size, or material of the dielectric layer.

[0024] In one embodiment, the method further includes:

[0025] When the electric field intensity between the three-dimensional compensation device and the circuit to be compensated is higher than the breakdown field strength of the insulating medium, at least one insulating layer is added to the inner layer and / or the outer layer of the conductive structure.

[0026] In a third aspect, the present application provides a high-voltage generator, including an oil tank in which an insulating oil medium is stored, and a circuit to be compensated is arranged in the oil tank, and a three-dimensional compensation device with diode voltage equalization as described in any one of the first aspects is sleeved outside the circuit to be compensated.

[0027] The above three-dimensional compensation device with diode voltage equalization, three-dimensional compensation method and high-voltage generator, the three-dimensional compensation device includes a conductive structure; the three-dimensional compensation device is sleeved on the circuit to be compensated; the circuit to be compensated includes a plurality of series-connected diodes, and there is a gap between the conductive structure and the plurality of series-connected diodes; the conductive structure forms a compensation capacitor with the plurality of series-connected diodes to perform voltage equalization compensation on the plurality of series-connected diodes, and the conductive structure is used to equalize the voltages of the plurality of series-connected diodes. The present application can not only form a compensation capacitor between the conductive structure and the plurality of series-connected diodes to perform voltage equalization compensation on the plurality of series-connected diodes; moreover, there is no direct electrical connection relationship between the three-dimensional compensation device and the circuit to be compensated in the present application. Therefore, the three-dimensional compensation device in the embodiments of the present application will not affect the design of the original circuit. In summary, the three-dimensional compensation device in the present application can safely, accurately and reliably compensate the plurality of series-connected diodes in the circuit to be compensated while ensuring the reasonable design of the plurality of series-connected diodes, thereby equalizing the voltage distribution of each series-connected diode. In addition, since the three-dimensional compensation device of the present application is a three-dimensional structure, the three-dimensional structure has a larger compensation margin and a higher degree of freedom of selection compared with the two-dimensional structure. Therefore, the voltage equalization compensation effect of the three-dimensional compensation device is better. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the following will briefly introduce the drawings required for use in the description of the embodiments or related technologies. Obviously, the following drawings are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0029] Figure 1 It is a schematic diagram of a boost circuit in traditional technology in an embodiment;

[0030] Figure 2 It is an equivalent circuit schematic diagram of the parasitic capacitance of series-connected diodes in an embodiment;

[0031] Figure 3 It is an equivalent circuit schematic diagram when series-connected diodes are reversely cut off in an embodiment;

[0032] Figure 4Schematic structural diagram of a three-dimensional compensation device in an embodiment;

[0033] Figure 5 Schematic equivalent circuit diagram of a series diode after voltage equalization compensation during reverse cutoff in an embodiment;

[0034] Figure 6 Schematic structural diagram of a three-dimensional compensation device compensating a series diode in an embodiment;

[0035] Figure 7 Schematic diagram of a boost circuit provided with a three-dimensional compensation device in an embodiment;

[0036] Figure 8 Schematic structural diagram of an elliptical barrel-shaped compensation device in an embodiment;

[0037] Figure 9 Schematic structural diagram of a square column-shaped compensation device in an embodiment;

[0038] Figure 10 Schematic structural diagram of a round cake-shaped compensation device in an embodiment;

[0039] Figure 11 Schematic structural diagram of a gourd-shaped compensation device in an embodiment;

[0040] Figure 12 Schematic structural diagram of a serrated compensation device in an embodiment;

[0041] Figure 13 Schematic structural diagram of an open comb-tooth-shaped compensation device in an embodiment;

[0042] Figure 14 Schematic structural diagram of a closed comb-tooth-shaped compensation device in an embodiment;

[0043] Figure 15 Schematic structural diagram of a compensation device with five functional layers in an embodiment;

[0044] Figure 16 Schematic structural diagram of a compensation device with six functional layers in an embodiment;

[0045] Figure 17 Schematic structural diagram of a compensation device with seven functional layers in an embodiment. Detailed implementation manners

[0046] In order to make the objectives, technical solutions and advantages of the present application clearer and more understandable, the present application will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0047] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs; the terms used herein are for the purpose of describing specific embodiments only and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above drawings are intended to cover non-exclusive inclusion.

[0048] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention.

[0049] In addition, the terms "first" and "second" are used only for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In the description of the present invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise specifically defined.

[0050] In the present invention, unless otherwise clearly defined and limited, the terms "mounted", "connected", "coupled", "fixed", etc. should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the internal communication of two elements or the interaction relationship between two elements, unless otherwise clearly limited. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0051] In the present invention, unless otherwise clearly defined and limited, the first feature being "on" or "under" the second feature may be that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature being "above", "over" and "on top of" the second feature may be that the first feature is directly above or obliquely above the second feature, or merely indicates that the first feature has a higher horizontal height than the second feature. The first feature being "under", "below" and "beneath" the second feature may be that the first feature is directly below or obliquely below the second feature, or merely indicates that the first feature has a lower horizontal height than the second feature.

[0052] It should be noted that when an element is referred to as "fixed to" or "disposed on" another element, it can be directly on the other element or there may also be an intermediate element. When an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intermediate element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are only for the purpose of illustration and do not represent the only implementation.

[0053] Referring to "embodiments" in this text means that the specific features, structures or characteristics described in connection with the embodiments can be included in at least one embodiment of this application. The appearance of this phrase at various positions in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art will explicitly and implicitly understand that the embodiments described herein can be combined with other embodiments.

[0054] With the development of high-voltage power supplies, high-voltage power supplies are widely used in both the medical and industrial fields. In high-voltage power supplies, a boost circuit is often used to perform high-voltage conversion on a relatively low input voltage. The boost methods of common boost circuits include: First, high boost conversion is performed through a transformer with a relatively large turns ratio, and the AC voltage is converted into a DC voltage through a bridge rectifier circuit or a voltage multiplier rectifier circuit, and then a DC high voltage is output; Second, low boost conversion is performed through a transformer with a relatively small turns ratio, and then the voltage is boosted and rectified through a multi-voltage multiplier circuit, and then a DC high voltage is output. Since the output voltage level of high-voltage power supplies often reaches dozens of KV to hundreds of KV (kilovolts), no matter which method is used for boosting, extremely high-voltage-resistant diodes need to be used. Usually, many diodes can be connected in series to improve the overall voltage resistance. When diodes are used in series, the voltage sharing effect of the series diodes will seriously affect their reliability, and thus will also affect the reliability of the entire high-voltage power supply device.

[0055] Generally, the high-frequency high-voltage diodes in the boost circuit can use high-voltage silicon stacks with multiple PN junctions in series or many (dozens or hundreds) of discrete high-voltage diodes connected in series. Since when multiple PN junctions are encapsulated in a high-voltage silicon stack element, it is limited by size and heat dissipation conditions, resulting in certain limitations for high-voltage silicon stacks with multiple PN junctions in series in high-voltage applications with high power or relatively large output current. Therefore, in high-voltage applications with relatively large output current, usually multiple rectifier diodes with relatively low voltage or relatively large current (1~2 kV, 1~1.5 A) are connected in series and used as high-frequency high-voltage diodes.

[0056] In a high-frequency and high-voltage application circuit, a spatial parasitic capacitance will be formed between the surrounding objects and the series diodes of the circuit to be compensated. For example, the pins (or PIN pins) of the series diodes and the traces between the pins will form a spatial parasitic capacitance with the surrounding objects (such as voltage multiplier capacitors, enclosures, etc.). During the reverse cut-off dynamic process of the series diodes, a certain charging current will flow through, and this current will further affect the uniform distribution of the voltage across the series diodes. As Figure 1 shown Figure 1 Figure 4 shows a schematic diagram of a boost circuit in the traditional technology in an embodiment. One end of the secondary winding of the transformer is connected to the midpoint of the diode bridge arm, and the other end is connected to the midpoint of the capacitor bridge arm. After the circuit operates stably, the voltage across the capacitor is basically stable. Therefore, the three ports output by the capacitor bridge arm in the rectifier circuit are called the DC side (Direct Current, DC). Since the upper and lower arms of the diode bridge arm will conduct with the change of the secondary voltage of the transformer, the potential of its midpoint will change continuously. Therefore, the midpoint of the diode bridge arm is called the AC side (Alternating Current, AC).

[0057] Assume Figure 1 the secondary winding of the transformer in Figure 4 outputs a positive voltage (corresponding to the upper positive and lower negative on the wire coil). At this time, the upper arm of the diode bridge arm conducts, and the lower arm is cut off. Taking out the diode bridge arm alone for simplified analysis, at this time, the diode bridge arm can be simplified as Figure 2 shown Figure 2 Figure 13 shows an equivalent circuit diagram of the parasitic capacitance of the series diodes in an embodiment. At this time, since the upper arm conducts, its conduction voltage drop can be ignored, while the lower arm is reversely cut off, and the voltage across it rises rapidly to 2Vcap. As mentioned above, there are spatial parasitic capacitances for each PIN pin of the series diodes and the traces between them, which are represented by Cp1, Cp2, Cp3... When the diodes are reversely cut off, due to the inherent body capacitance, they can be equivalently regarded as capacitors Cd1, Cd2, Cd3... Therefore Figure 2 it can be further simplified as Figure 3 shown Figure 3 shown Figure 3This is a schematic diagram of an equivalent circuit when the series diode is reversely cut off in an embodiment. For example, the charge flowing through Cd5 includes not only the charge on Cd6, but also the charge flowing through the spatial parasitic capacitor Cp6 on Cd6. Similarly, the charge flowing through Cd4 is equal to the charge flowing through Cd5 plus the charge flowing through Cp5. By analogy, the charge flowing through Cd1 is equal to the charge flowing through the lower bridge arm diode plus the charge flowing through the spatial parasitic capacitor of all lower bridge arm diodes except Cd1. Since the capacitor voltage U=ΔQ / C, that is, the capacitor voltage is proportional to the charge flowing through the capacitor, the closer the capacitor (or diode) to the AC side is to the reverse cutoff of the bridge arm, the greater the voltage it bears, which in turn causes uneven voltage distribution in the series diode branch, resulting in an increased probability of overvoltage breakdown of the diode, which seriously affects the reliability of the high-voltage power supply device.

[0058] Therefore, how to balance the voltage of multiple diodes connected in series while ensuring that the designs of multiple diodes connected in series are reasonable has become a technical problem that needs to be solved urgently in current high-frequency and high-voltage circuits.

[0059] In one embodiment, a three-dimensional compensation device for diode voltage balancing is provided, the three-dimensional compensation device comprising a conductive structure; the three-dimensional compensation device is sleeved on a circuit to be compensated;

[0060] The circuit to be compensated includes a plurality of diodes connected in series, and a gap is provided between the conductive structure and the plurality of diodes connected in series;

[0061] The conductive structure forms a compensation capacitor with the multiple series-connected diodes to perform voltage-equalizing compensation on the multiple series-connected diodes. The conductive structure is used to equalize the voltage of the multiple series-connected diodes.

[0062] In the embodiments of the present application, for example, Figure 4 As shown, Figure 4 The schematic diagram of the structure of a three-dimensional compensation device in an embodiment. The three-dimensional compensation device for diode equalization includes a conductive structure 11, which is sleeved or covered on a plurality of series diodes 21 in the circuit to be compensated, and the plurality of series diodes 21 are fixed on a PCB board 20 (Printed Circuit Board), and a gap is provided between the conductive structure 11 and the plurality of series diodes 21, and a dielectric medium such as insulating oil may be present in the gap, so the three-dimensional compensation device has no direct contact with the plurality of series diodes to be compensated, so the three-dimensional compensation device in the embodiment of the present application does not affect the circuit design of the series diodes.

[0063] Among them, the conductive structure can be a good conductor with any thickness. Exemplarily, the conductive structure can include but is not limited to materials such as copper, aluminum, iron, and silver. The interval between the above conductive structure and the multiple series-connected diodes can be set according to actual requirements, and the specific value of the interval is not limited in the embodiments of the present application. In addition, the fixing structure of the multiple series-connected diodes can be a PCB board structure, or it can also be a three-dimensional welding structure. Of course, the fixing structure of the multiple series-connected diodes is not limited in the embodiments of the present application.

[0064] Since the three-dimensional compensation device includes a conductive structure, therefore, in the present application, a compensation capacitor can be formed between the conductive structure and the multiple series-connected diodes, so that the multiple series-connected diodes can be subjected to voltage equalization compensation through the compensation capacitor to achieve a better voltage equalization compensation effect. As Figure 5 shown, Figure 5 FIG. is a schematic diagram of an equivalent circuit of series-connected diodes after voltage equalization compensation during reverse cut-off in an embodiment. The compensation capacitors formed by the three-dimensional compensation device and the PIN pins and traces of the series-connected diodes to be compensated are Cc1, Cc2, Cc3,.... As can be seen from the previous analysis, the closer the diode is to the AC side, the more charge flows through it, resulting in a higher shared voltage and being more likely to break down. After adding the three-dimensional compensation device, the formed spatial compensation capacitor can compensate the charge of the diode close to the AC side, reducing the charge flowing through it, and thus reducing the voltage it bears. The specific analysis is as follows:

[0065] If the charge flowing through the compensation capacitor Cc2 is equal to the charge flowing through the parasitic capacitor Cp2, the charge flowing through the compensation capacitor Cc3 is equal to the charge flowing through the parasitic capacitor Cp3, the charge flowing through the compensation capacitor Cc4 is equal to the charge flowing through the parasitic capacitor Cp4, and so on, then the charges flowing through Cd1, Cd2, Cd3,... are exactly equal. Therefore, when the body capacitances of the diodes are not very different, good voltage balance can be achieved for each diode.

[0066] In each high-voltage power supply design, the boost scheme adopted is different, and the layout of the series diode and the surrounding objects is also different. Therefore, the spatial parasitic capacitance between the series diode and the surrounding is also very different, so the compensation capacitance required by the series diode is also different. Therefore, the compensation area can be determined by setting the shape of the conductive structure, that is, the conductive structure can be designed into different three-dimensional shapes in combination with the actual application requirements. For example, the shape of the conductive structure may include but is not limited to an elliptical barrel, a square column, a round cake, a gourd, a sawtooth, an open comb or a closed comb. In addition, the conductive structure may include at least one conductive layer, and the embodiment of the present application may also design multiple conductive layers according to the needs of the actual application to accurately compensate the diode to be compensated. Optionally, the three-dimensional compensation device may be semi-enclosed and set on the circuit to be compensated, or the three-dimensional compensation device may be fully enclosed and set on the circuit to be compensated. Of course, the embodiment of the present application does not limit this.

[0067] As mentioned above, the spatial parasitic capacitance of each diode in the series diode to the surrounding objects is different. Therefore, if it is further desired to accurately compensate each diode in the multiple series diodes, a compensation capacitor with different capacitance values ​​can be set for each diode. Since the calculation formula of capacitance is: C=ε*S / (4π*k*d), where C is the capacitance, ε is the dielectric constant of the medium in the capacitor, S is the area facing the two poles of the capacitor, k is the electrostatic force constant, and d is the plate spacing, the area facing S of the compensation capacitor can be changed by adjusting the shape of the conductive structure, and the plate spacing d between the electrode plate and the series diode can be adjusted by adjusting the spacing between the conductive structure and the diode to be compensated. In addition, the dielectric constant of the medium in the capacitor can be adjusted by adding a dielectric layer, so that the diode to be compensated can be accurately compensated.

[0068] In the above three-dimensional compensation device for diode voltage equalization, the three-dimensional compensation device includes a conductive structure; the three-dimensional compensation device is sleeved on the circuit to be compensated; the circuit to be compensated includes a plurality of series-connected diodes, and there is a gap between the conductive structure and the plurality of series-connected diodes; the conductive structure forms a compensation capacitor with the plurality of series-connected diodes to perform voltage equalization compensation on the plurality of series-connected diodes, and the conductive structure is used to equalize the voltages of the plurality of series-connected diodes. This application can not only form a compensation capacitor between the conductive structure and the plurality of series-connected diodes to perform voltage equalization compensation on the plurality of series-connected diodes; moreover, the three-dimensional compensation device in this application has no direct contact with the plurality of series-connected diodes to be compensated. Therefore, the three-dimensional compensation device in the embodiments of this application will not affect the design of the original circuit of the series-connected diodes. In summary, the compensation device in this application can safely, accurately and reliably compensate the plurality of series-connected diodes in the circuit to be compensated while ensuring the reasonable design of the plurality of series-connected diodes, thereby equalizing the voltage distribution of each series-connected diode. In addition, since the three-dimensional compensation device of this application is a three-dimensional structure, the three-dimensional structure has a larger compensation margin and a higher degree of freedom of selection compared with two dimensions. Therefore, the voltage equalization compensation effect of the three-dimensional compensation device is better.

[0069] In one embodiment, the three-dimensional compensation device for diode voltage equalization further includes: at least one dielectric layer, and the dielectric layer is disposed between the conductive structure and the circuit to be compensated;

[0070] The dielectric layer has a dielectric constant, and the size of the compensation capacitor is adjusted by designing at least one of the shape, size or material of the dielectric layer.

[0071] In the embodiments of this application, the three-dimensional compensation device further includes at least one dielectric layer. Optionally, according to actual application requirements, no dielectric layer can be added to the three-dimensional compensation device, or one dielectric layer can be added, or multiple dielectric layers can be added. If one dielectric layer is added to the three-dimensional compensation device, the dielectric layer can be disposed between the conductive structure and the circuit to be compensated, that is, the dielectric layer can be disposed inside the conductive layer; or, if multiple dielectric layers are added to the three-dimensional compensation device, the dielectric layers can be disposed inside and outside the conductive layer, and the number of dielectric layers can be set according to the requirements of the dielectric constant. Optionally, if the three-dimensional compensation device includes one conductive layer, the dielectric layer is disposed between the conductive structure and the circuit to be compensated; if the three-dimensional compensation device includes multiple conductive layers, at this time, the dielectric layer can be disposed inside the conductive layer, or outside the conductive layer, or inside and outside the conductive layer. Optionally, a preset gap can be provided between the dielectric layer and the conductive layer, or no gap can be provided between the dielectric layer and the conductive layer.

[0072] Since the dielectric layer has the function of adjusting and compensating the dielectric constant of the capacitor, it is possible to adjust the equivalent dielectric constant of each compensating capacitor, and thus the capacitance value of each compensating capacitor, by adding at least one dielectric layer and designing at least one of the shape, size, high-dielectric material type, thickness, or number of layers of the dielectric layer. In addition, the compensation area can be accurately positioned by cutting the dielectric layer into a specific shape. In this way, the diode to be compensated can be accurately compensated. For example, if the shape of the previously designed dielectric layer is circular and the diameter of the dielectric layer is 5, and at this time, if it is necessary to increase the capacitance value of the compensating capacitor, the diameter of the dielectric layer can be adjusted to 10 without changing the shape of the dielectric layer, so as to adjust the capacitance value of the compensating capacitor by increasing the size of the dielectric layer. For another example, when adding multiple dielectric layers, different materials can also be designed for each dielectric layer to adjust the size of the compensating capacitor. It should be noted that once the material of the dielectric layer is determined, the dielectric constant of the dielectric layer is a fixed value at this time.

[0073] Among them, the dielectric layer can be filled with any high-dielectric constant material, and the high-dielectric constant materials can include but are not limited to organic polymer materials, ceramic materials, and semiconductor materials. In addition, each dielectric layer can use the same dielectric material, or each dielectric layer can also be combined with different dielectric materials.

[0074] In one embodiment, the three-dimensional compensation device for diode voltage equalization further includes: at least one insulating layer; the insulating layer is disposed on the inner layer and / or outer layer of the conductive structure;

[0075] The insulating layer is used to insulate the three-dimensional compensation device from the circuit to be compensated.

[0076] In the embodiment of the present application, the three-dimensional compensation device further includes at least one insulating layer, and the insulating layer is disposed on the inner layer and / or outer layer of the conductive structure, that is, according to actual application requirements, one or more insulating layers can be added to the three-dimensional compensation device, and the insulating layer can be disposed between any layers or on the inner and outer surfaces of the three-dimensional compensation device that need to be insulated. The embodiment of the present application does not limit this. Exemplarily, the insulating layer can be disposed between the conductive layer and the diode to be compensated, or can be disposed outside the conductive layer, or can also be disposed inside and outside the conductive layer, or can also be disposed between the layers of the three-dimensional compensation device. Optionally, a preset gap can be provided between the insulating layer and the conductive layer, or no gap can be provided between the insulating layer and the conductive layer. Optionally, according to actual application requirements, no insulating layer can be added to the three-dimensional compensation device, or one insulating layer can be added, or multiple insulating layers can be added.

[0077] Based on the above embodiments, the conductive layer is in a three-dimensional structure and wraps around the diode to be compensated. Therefore, there is a high voltage difference between the conductive layer and the diode to be compensated and the surrounding objects, which is likely to cause high-voltage partial discharge or sparking. Therefore, when the electric field strength between the three-dimensional compensation device and the circuit to be compensated and / or the surrounding objects is higher than the breakdown field strength of the insulating medium, at least one insulating layer needs to be added to insulate the three-dimensional compensation device. Optionally, if the insulating layer is arranged on the inner layer of the conductive structure, the insulating layer is used to insulate the three-dimensional compensation device from the circuit to be compensated; if the insulating layer is arranged on the outer layer of the conductive structure, the insulating layer is used to insulate the three-dimensional compensation device from the surrounding objects; if the insulating layer is arranged on the inner and outer layers of the conductive structure, the insulating layer is used to insulate the three-dimensional compensation device from the circuit to be compensated and the surrounding objects. Among them, the surrounding objects include the housing of the three-dimensional compensation device, the secondary winding of the transformer, the magnetic core, etc.

[0078] Among them, the insulating layer can be coated or sprayed with any insulating material, and the insulating material can include but is not limited to insulating paper, insulating tape, insulating paint and other materials. Each insulating layer can use the same material, or different insulating materials can be selected according to the insulation requirements of each layer, or multiple insulating materials can be used in combination. The insulating layer is used to isolate the electric field between the compensation device and the series diode and / or other surrounding objects through the insulating material, preventing problems such as partial discharge or insulation breakdown.

[0079] In one embodiment, the above conductive structure includes a first conductive layer and a second conductive layer, and the first conductive layer is sleeved on the second conductive layer;

[0080] A dielectric layer is arranged between the first conductive layer and the second conductive layer.

[0081] In the embodiments of the present application, the conductive structure includes a first conductive layer and a second conductive layer, the first conductive layer is sleeved on the second conductive layer, and a dielectric layer is arranged between the first conductive layer and the second conductive layer. At this time, the three-dimensional compensation device can include at least one dielectric layer, and the dielectric layer can be arranged inside the second conductive layer, or outside the second conductive layer, or inside and outside the second conductive layer; of course, the dielectric layer can also be arranged inside the first conductive layer. Optionally, a preset gap can be arranged between the dielectric layer and the conductive layer, or no gap can be arranged between the dielectric layer and the conductive layer.

[0082] In one embodiment, the above conductive structure includes a first electrode plate and / or a second electrode plate, the first electrode plate is arranged above the circuit to be compensated, and the second electrode plate is arranged below the circuit to be compensated.

[0083] In the embodiments of the present application, the conductive structure includes a first electrode plate and / or a second electrode plate. The first electrode plate is disposed above the circuit to be compensated, and the second electrode plate is disposed below the circuit to be compensated. Wherein, the conductive layer may include one or two electrode plates. If the conductive structure includes a first electrode plate and a second electrode plate, the first electrode plate and the second electrode plate are arranged in parallel on different horizontal planes. At this time, a plurality of series diodes are arranged between the first electrode plate and the second electrode plate, and the plurality of series diodes are not in direct contact with the first electrode plate and the second electrode plate. In addition, optionally, the conductive structure may further include at least one support frame. The support frame is connected to the first electrode plate and the second electrode plate, and the support frame is used to support the first electrode plate and the second electrode plate. Thus, the first electrode plate, the second electrode plate and at least one support frame form a three-dimensional compensation device.

[0084] In an exemplary embodiment, as Figure 6 shown, Figure 6 FIG. is a schematic structural diagram of a three-dimensional compensation device compensating series diodes in an embodiment. The three-dimensional compensation device includes a first insulating layer 12, a dielectric layer 13, a conductive layer 11, and a second insulating layer 14 which are sequentially arranged from the inside to the outside. Wherein, the diodes within the area covered by the three-dimensional compensation device are the diodes 21 to be compensated, and a plurality of series-connected diodes 21 are fixed on the circuit board 20. Optionally, the first insulating layer 12, the dielectric layer 13, the conductive layer 11, and the second insulating layer 14 may be closely attached to each other, or there may be gaps therebetween. The embodiments of the present application do not limit this; and the materials, structures, and functions of the first insulating layer 12, the dielectric layer 13, the conductive layer 11, and the second insulating layer 14 are different from each other. In this way, the design freedom of the compensation device can be greatly increased, and the requirements of the series diodes for insulation, layout, compensation amount, etc. can be met by adjusting the shapes, materials, and structures (including thickness, length, width, etching degree, etc.) of each layer.

[0085] It should be noted that the three-dimensional compensation device in the embodiments of the present application is connected to the secondary winding corresponding to the circuit to be compensated, and the secondary winding is disposed in a transformer. As Figure 7 shown, Figure 7 FIG. is a schematic diagram of a boost circuit provided with a three-dimensional compensation device in an embodiment. Figure 7The circuit to be compensated therein is a voltage doubler rectifier circuit. The high-voltage circuit includes circuit modules such as a high-voltage transformer and a rectifier circuit. The rectifier circuit includes multiple series-connected diodes. Among them, the conductive layer is directly connected to the secondary winding of the transformer in the circuit to be compensated through a wire. Therefore, the three-dimensional compensation device has no direct contact with the diodes to be compensated. Specifically, one end of the secondary winding of the high-voltage transformer is connected to the midpoint of the diode bridge arm, and one end is connected to the midpoint of the capacitor bridge arm. The two ends of the diode bridge arm and the capacitor bridge arm are respectively connected. The three-dimensional compensation device is sleeved outside the area to be compensated of the diode bridge arm. The area to be compensated is the area where the series-connected diodes near the AC side in the circuit to be compensated are located. Since this compensation device is not directly electrically connected to the rectifier circuit, it does not affect the design of the original rectifier circuit in terms of layout, insulation, function, etc. At the same time, it can also adjust the size of the compensation capacitor in various ways to balance the voltage distribution of the series-connected diodes, and no new insulation risk points will be introduced.

[0086] In one embodiment, the conductive structure includes any one of square, circular, mesh or strip-shaped. For example, the shape of the conductive structure can include but is not limited to shapes such as elliptical barrel-shaped, square column-shaped, round cake-shaped, gourd-shaped, serrated, open comb-shaped or closed comb-shaped, etc. In an exemplary embodiment, as Figure 8 shown, Figure 8 is a schematic structural diagram of an elliptical barrel-shaped compensation device in one embodiment. The elliptical barrel-shaped compensation device is applicable to a large-area square compensation scheme; as Figure 9 shown, Figure 9 is a schematic structural diagram of a square column-shaped compensation device in one embodiment. The square column-shaped compensation device is applicable to a large-area square compensation scheme; as Figure 10 shown, Figure 10 is a schematic structural diagram of a round cake-shaped compensation device in one embodiment. The round cake-shaped compensation device is applicable to a large-area circular compensation scheme; as Figure 11 shown, Figure 11 is a schematic structural diagram of a gourd-shaped compensation device in one embodiment. The gourd-shaped compensation device is applicable to a small-area circular compensation scheme; as Figure 12 shown, Figure 12 is a schematic structural diagram of a serrated compensation device in one embodiment. The serrated compensation device is applicable to a single diode device-level compensation scheme; as Figure 13 shown, Figure 13 is a schematic structural diagram of an open comb-shaped compensation device in one embodiment. The open comb-shaped compensation device is applicable to a strip circuit chain-level compensation scheme; as Figure 14 shown, Figure 14 is a schematic structural diagram of a closed comb-shaped compensation device in one embodiment. The closed comb-shaped compensation device is applicable to a strip circuit chain-level compensation scheme.

[0087] In addition, according to different insulation requirements and different compensation capacitor requirements, the number of layers of the conductive layer, insulating layer, and dielectric layer can be selectively increased. Exemplarily, as Figure 15 shown, Figure 15 FIG. Figure 15 is a schematic structural diagram of a compensation device with five functional layers in an embodiment. The compensation device with five functional layers includes a conductive layer 11, a first insulating layer 12, a first dielectric layer 13, a second insulating layer 14, and a second dielectric layer 15; as Figure 16 shown, Figure 16 FIG. Figure 16 is a schematic structural diagram of a compensation device with six functional layers in an embodiment. The compensation device with six functional layers includes a conductive layer 11, a first insulating layer 12, a first dielectric layer 13, a second insulating layer 14, a second dielectric layer 15, and a third insulating layer 16; as Figure 17 shown, Figure 17 FIG. Figure 17 is a schematic structural diagram of a compensation device with seven functional layers in an embodiment. The compensation device with seven functional layers includes a conductive layer 11, a first insulating layer 12, a first dielectric layer 13, a second insulating layer 14, a second dielectric layer 15, a third insulating layer 16, and a fourth insulating layer 17.

[0088] In an embodiment, a three-dimensional compensation method for diode voltage equalization is provided. Taking the application of this method to the three-dimensional compensation device for diode voltage equalization in any of the above embodiments as an example, the method includes:

[0089] Placing the three-dimensional compensation device over the circuit to be compensated;

[0090] Adjusting the spacing between the conductive structure and the multiple series-connected diodes according to the magnitudes of the compensation capacitors required by the multiple series-connected diodes in the circuit to be compensated;

[0091] The conductive structure and the multiple series-connected diodes form a compensation capacitor to perform voltage equalization compensation on the multiple series-connected diodes.

[0092] In the embodiments of the present application, if voltage equalization compensation needs to be performed on multiple series-connected diodes in the circuit to be compensated, the three-dimensional compensation device can be placed over the circuit to be compensated, and the spacing between the conductive structure and the multiple series-connected diodes can be adjusted according to the magnitudes of the compensation capacitors required by the multiple series-connected diodes in the circuit to be compensated, so as to achieve the matching of the magnitude of the compensation capacitor and the spatial parasitic capacitance, thereby realizing the effect of compensating for the spatial parasitic capacitance. After adjusting the spacing between the conductive structure and the multiple series-connected diodes, the conductive structure can form a compensation capacitor with the multiple series-connected diodes to perform voltage equalization compensation on the multiple series-connected diodes.

[0093] In an embodiment, the method further includes:

[0094] In the case where the current compensation capacitor of the three-dimensional compensation device does not meet the preset magnitude of the compensation capacitor, at least one dielectric layer is added between the conductive structure and the circuit to be compensated;

[0095] Adjust the size of the compensation capacitance according to at least one of the shape, size, or material of the dielectric layer.

[0096] In one embodiment, the method further includes:

[0097] When the electric field strength between the three-dimensional compensation device and the circuit to be compensated is higher than the breakdown field strength of the insulating medium, at least one insulating layer is added to the inner layer and / or outer layer of the conductive structure.

[0098] In the embodiments of the present application, the specific steps and beneficial effects of the three-dimensional compensation method for diode voltage equalization can refer to the above embodiments and will not be elaborated here.

[0099] In one embodiment, a high-voltage generator is provided, including an oil tank storing an insulating oil medium, a circuit to be compensated is arranged in the oil tank, and a three-dimensional compensation device for diode voltage equalization according to any one of the above embodiments is sleeved outside the circuit to be compensated.

[0100] Among them, an insulating oil medium is stored in the oil tank, and the circuit to be compensated and the three-dimensional compensation device are arranged in the oil tank. In the embodiments of the present application, the structures and beneficial effects of the circuit to be compensated and the three-dimensional compensation device can refer to the above embodiments and will not be elaborated here.

[0101] The technical features of the above embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope recorded in this specification.

[0102] The above embodiments only represent several implementation manners of the present application. The description is relatively specific and detailed, but it should not be construed as a limitation on the patent scope of the present application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several deformations and improvements can still be made, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the appended claims.

Claims

1. A three-dimensional compensation device for diode voltage equalization, characterized in that, The three-dimensional compensation device includes a conductive structure; the three-dimensional compensation device is sleeved on the circuit to be compensated; The circuit to be compensated includes a plurality of series-connected diodes, and there is a gap between the conductive structure and the plurality of series-connected diodes; The conductive structure forms a compensation capacitor with the plurality of series-connected diodes to perform voltage equalization compensation on the plurality of series-connected diodes, and the conductive structure is used to equalize the voltages of the plurality of series-connected diodes.

2. The device according to claim 1, wherein The three-dimensional compensation device further includes: at least one dielectric layer, and the dielectric layer is disposed between the conductive structure and the circuit to be compensated; For the dielectric layer, the dielectric layer has a dielectric constant, and the size of the compensation capacitor is adjusted by designing at least one of the shape, size or material of the dielectric layer.

3. The device according to claim 1, characterized in that, The three-dimensional compensation device further includes: at least one insulating layer; the insulating layer is disposed on the inner layer and / or outer layer of the conductive structure; The insulating layer is used to insulate the three-dimensional compensation device from the circuit to be compensated.

4. The device according to claim 1, characterized in that, The conductive structure includes a first conductive layer and a second conductive layer, and the first conductive layer is sleeved on the second conductive layer; A dielectric layer is disposed between the first conductive layer and the second conductive layer.

5. The device according to claim 1, characterized in that The conductive structure includes a first electrode plate and / or a second electrode plate, the first electrode plate is disposed above the circuit to be compensated, and the second electrode plate is disposed below the circuit to be compensated.

6. The device according to any one of claims 1-5, characterized in that, The conductive structure includes any one of a square shape, a circular shape, a mesh shape or a strip shape.

7. The device according to any one of claims 1-5, characterized in that The three-dimensional compensation device is connected to the secondary side winding corresponding to the circuit to be compensated, and the secondary side winding is disposed in a transformer.

8. A three-dimensional compensation method for diode voltage equalization, characterized in that, The method is applied to the three-dimensional compensation device for diode voltage equalization according to any one of claims 1-7, and the method includes: Sleeving the three-dimensional compensation device on the circuit to be compensated; According to the size of the compensation capacitor required by the plurality of series-connected diodes in the circuit to be compensated, adjusting the gap between the conductive structure and the plurality of series-connected diodes; The conductive structure forms a compensation capacitor with the plurality of series-connected diodes to perform voltage equalization compensation on the plurality of series-connected diodes.

9. The method according to claim 8, characterized in that The method further includes: When the current compensation capacitor of the three-dimensional compensation device does not meet the preset compensation capacitor size, adding at least one dielectric layer between the conductive structure and the circuit to be compensated; Adjusting the size of the compensation capacitor according to at least one of the shape, size or material of the dielectric layer.

10. The method according to claim 8, characterized in that, The method further includes: When the electric field intensity between the three-dimensional compensation device and the circuit to be compensated is higher than the breakdown field strength of the insulating medium, adding at least one insulating layer to the inner layer and / or outer layer of the conductive structure.

11. A high-voltage generator, characterized in that, It includes an oil tank, in which an insulating oil medium is stored, the circuit to be compensated is disposed in the oil tank, and a three-dimensional compensation device for diode voltage equalization according to any one of claims 1 to 7 is sleeved outside the circuit to be compensated.

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