High-frequency transceiver chip device based on on-chip antenna-pulse source heterogeneous integration

Abstract

The invention discloses a high-frequency transceiver chip device based on on-chip antenna-pulse source heterogeneous integration, and relates to the technical field of antennas. Comprising an excitation structure used for exciting a high-frequency signal through a photoconductive switch; the transmission structure is used for low-loss transmission of high-frequency signals; the acquisition structure is used for acquiring the space electromagnetic wave signal converted by the radiating antenna; the radiation structure is used for realizing mutual conversion between on-chip current and space electromagnetic waves; the excitation structure, the transmission structure, the acquisition structure and the radiation structure are integrated on the same chip; according to the high-frequency transceiver chip device based on the on-chip antenna-pulse source heterogeneous integration, the high-frequency pulse source and the millimeter wave antenna are heterogeneous integrated, so that radiation and receiving of high-frequency electromagnetic waves above 110 GHz are realized; by optimizing the transfer and transmission structure design of the photoconductive substrate, the transmission loss of high-frequency signals is reduced, and the radiation power is improved; the receiving function of high-frequency electromagnetic waves is realized, and the application range of the device is expanded.

Description

Technical Field

[0001] The present invention relates to the technical field of antennas, and specifically to a high-frequency transceiver chip device based on the heterogeneous integration of an on-chip antenna and a pulse source. Background Art

[0002] With the advent of the big data era, people's demand for high-speed data transmission has been increasing day by day, and the frequency band of wireless communication has gradually developed towards high frequency bands. As a classic passive device, an antenna can realize the mutual conversion between a guided high-frequency alternating current and a space-radiated electromagnetic wave, and is widely used in various fields. However, with the increase in frequency, the traditional passive antenna design faces many challenges.

[0003] At present, there are mature millimeter-wave band passive antenna design solutions in the industry. However, due to the leakage effect caused by size miniaturization, the operating frequency of the electrical pulse source is limited to below 110 GHz. Lack of the support of high-frequency pulse sources greatly limits the application of high-frequency passive antennas, thus hindering the development of high-frequency wireless communication.

[0004] To solve this problem, researchers have proposed a variety of novel high-frequency electromagnetic wave emission devices, such as photoconductive antennas, spin terahertz devices, photodiode antennas, etc. These devices do not require external current source excitation and break through the frequency limitation of traditional current pulse sources. Under the excitation of a laser, these devices utilize the photoelectric conversion characteristics of the substrate material to autonomously generate an alternating current, and then form an electromagnetic wave radiation. The latest research shows that such devices can generate electromagnetic wave radiation at terahertz frequencies.

[0005] However, these novel devices still face the following problems: Difficulty in power improvement: Due to the limitation of the photoconductive material, the radiation power is low and it is difficult to meet the actual application requirements.

[0006] Limited modulation methods: There are fewer existing modulation means, which limits their application in complex communication systems.

[0007] Unable to be used as a receiving antenna: These devices are mainly used for transmission and it is difficult to realize the function of receiving high-frequency electromagnetic waves.

[0008] Therefore, a high-frequency transceiver chip device based on the heterogeneous integration of an on-chip antenna and a pulse source is proposed to solve the above problems. Summary of the Invention

[0009] The purpose of the present invention is to provide a high-frequency transceiver chip device based on the heterogeneous integration of an on-chip antenna and a pulse source. By using the interlayer transfer technology of the photoconductive substrate layer, the high-frequency pulse source and the millimeter-wave antenna are heterogeneously integrated on the same chip, solving the frequency bottleneck problem of traditional passive antennas in the high-frequency band, and at the same time overcoming the problems of power, modulation, and reception limitations of novel photoconductive devices.

[0010] To achieve the above object, the present invention provides the following technical solutions: A high-frequency transceiver chip device based on the heterogeneous integration of an on-chip antenna and a pulse source, comprising: Photoconductive substrate: The photoconductive substrate is peeled off by chemical reagents and transferred onto a substrate with low dielectric loss. The substrate with low dielectric loss includes silicon, glass, or PCB material; Radiation structure: The radiation structure includes a passive antenna for converting high-frequency electrical signals into spatial electromagnetic waves; Collection structure: The collection structure includes a photoconductive switch for receiving high-frequency electromagnetic wave signals. The photoconductive switch is disposed on the photoconductive substrate. The photoconductive switch includes a gap electrode, and the gap electrode transmits the received electrical signal to the signal collection outlet through laser irradiation; Transmission structure: The transmission structure includes a coplanar waveguide for transmitting high-frequency electrical signals; Excitation structure: For generating high-frequency electrical pulses. The excitation structure includes a photoconductive switch. The photoconductive switch is disposed on the photoconductive substrate. The photoconductive switch includes a gap electrode, and the gap electrode excites picosecond electrical pulses through laser irradiation; The radiation structure, collection structure, transmission structure, and excitation structure are integrally integrated on the same chip. Through the substrate material and device structure, the effective radiation and reception of high-frequency electromagnetic waves are achieved.

[0011] Further, the photoconductive switch of the excitation structure excites picosecond electrical pulses through DC bias voltage and laser irradiation. The DC bias voltage is provided from the lower end, and the photoconductive substrate material between the laser irradiation electrodes generates high-frequency electrical pulses.

[0012] Further, the coplanar waveguide of the transmission structure is optimized and designed through electromagnetic simulation software. For different radiation antenna input requirements, different transmission structures are designed to reduce the transmission loss of high-frequency signals.

[0013] Further, the photoconductive switch of the collection structure transmits the received electrical signal to the signal collection outlet through laser irradiation. The signal collection outlet is connected to the radiation structure to achieve the reception of high-frequency electromagnetic waves.

[0014] Further, the passive antenna of the radiation structure is optimized and designed through electromagnetic simulation software to achieve the mutual conversion between on-chip current and spatial electromagnetic waves.

[0015] Further, the peeling thickness of the photoconductive substrate is 1um, and it is transferred onto a substrate with low dielectric loss and covers at least the regions of the excitation structure and the collection structure.

[0016] Further, the device further includes an impedance matching design for reducing the high-frequency signal transmission loss caused by the sudden change in the material transmission properties at the interconnect interface of different substrate materials.

[0017] Further, the device excites a photoconductive switch through laser irradiation to generate high-frequency electrical pulses, and converts the high-frequency electrical signals into spatial electromagnetic waves through a passive antenna to achieve the radiation and reception of high-frequency electromagnetic waves.

[0018] Further, the operating frequency range of the device is above 110 GHz, which is applicable to wireless communication and radar ranging systems.

[0019] Compared with the prior art, the present invention provides a high-frequency transceiver chip device based on the heterogeneous integration of an on-chip antenna and a pulse source, which has the following beneficial effects: This high-frequency transceiver chip device based on the heterogeneous integration of an on-chip antenna and a pulse source realizes the radiation and reception of high-frequency electromagnetic waves above 110 GHz by heterogeneously integrating a high-frequency pulse source and a millimeter-wave antenna; by optimizing the transfer and transmission structure design of the photoconductive substrate, the transmission loss of high-frequency signals is reduced and the radiation power is improved; through the design of the acquisition structure, the reception function of high-frequency electromagnetic waves is realized, expanding the application range of the device; integrating the high-frequency pulse source and the millimeter-wave antenna on the same chip reduces the device size and improves the integration degree. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0021] Figure 1 It is a schematic diagram of the photoconductive substrate structure to be peeled off of the high-frequency transceiver chip device based on the heterogeneous integration of an on-chip antenna and a pulse source of the present invention; Figure 2 It is a schematic diagram of the substrate peeling and transfer process of the high-frequency transceiver chip device based on the heterogeneous integration of an on-chip antenna and a pulse source of the present invention; Figure 3 It is a schematic diagram of the metal layer structure of the high-frequency transceiver chip device based on the heterogeneous integration of an on-chip antenna and a pulse source of the present invention after the transfer and device processing are completed; Figure 4 It is a schematic diagram of the structure of the high-frequency transceiver chip device based on the heterogeneous integration of an on-chip antenna and a pulse source of the present invention.

[0022] In the figure: 1. Radiation structure; 2. Acquisition structure; 3. Transmission structure; 4. Excitation structure. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0023] To make the above objects, features, and advantages of the present invention more apparent and understandable, the following detailed description of the specific embodiments of the present invention will be given in conjunction with the accompanying drawings of the specification.

[0024] In the following description, many specific details are set forth to facilitate a thorough understanding of the present invention. However, the present invention can also be implemented in other ways different from those described herein. Those skilled in the art can make similar generalizations without departing from the connotation of the present invention. Therefore, the present invention is not limited by the specific embodiments disclosed below.

[0025] Secondly, the so-called "one embodiment" or "embodiment" herein refers to specific features, structures, or characteristics that can be included in at least one implementation manner of the present invention. The phrase "in one embodiment" that appears in different places in this specification does not necessarily refer to the same embodiment, nor is it an embodiment that is separate or selectively mutually exclusive with other embodiments.

[0026] Please refer to Figures 1-4 , due to the good absorption of laser energy by the lattice, the thickness of the actual working area of a conventional photoconductive substrate is only 1 um in the outermost layer, and a sacrificial layer is added between two layers in some photoconductive substrates; the sacrificial layer can be etched with chemical reagents to achieve the peeling of the 1-um-thick outermost layer of the photoconductive substrate; the peeled outermost layer of the photoconductive substrate is transferred to the surface of other substrates such as silicon, glass, or PCB, and device processing is achieved through integrated circuit processing. Here, since the area of the peeled photoconductive substrate can be freely defined, it is also possible to transfer the substrate only in a small area in the photoconductive switch device area.

[0027] The present invention discloses a high-frequency transceiver chip device based on the heterogeneous integration of an on-chip antenna and a pulse source, including: A photoconductive substrate: The photoconductive substrate is peeled off with chemical reagents and transferred onto a substrate with low dielectric loss, and the substrate with low dielectric loss includes materials such as silicon, glass, or PCB; Radiation structure 1: The radiation structure 1 includes a passive antenna for converting high-frequency electrical signals into spatial electromagnetic waves; Acquisition structure 2: The acquisition structure 2 includes a photoconductive switch for receiving high-frequency electromagnetic wave signals. The photoconductive switch is arranged on the photoconductive substrate, and the photoconductive switch includes a gap electrode, and the gap electrode transmits the received electrical signal to the signal acquisition outlet through laser irradiation; Transmission structure 3: The transmission structure 3 includes a coplanar waveguide (GSG) for transmitting high-frequency electrical signals; Excitation structure 4: used to generate high-frequency electrical pulses. The excitation structure 1 includes a photoconductive switch, which is disposed on a photoconductive substrate. The photoconductive switch includes a gap electrode, and the gap electrode is excited by laser irradiation to generate picosecond electrical pulses; The radiation structure 1, the acquisition structure 2, the transmission structure 3, and the excitation structure 4 are integrally integrated on the same chip. Through the substrate material and device structure, effective radiation and reception of high-frequency electromagnetic waves are achieved.

[0028] Specifically, the photoconductive switch of the excitation structure 4 is excited by a DC bias voltage and laser irradiation to generate picosecond electrical pulses. The DC bias voltage is provided from the lower end, and the laser irradiates the photoconductive substrate material between the electrode gaps to generate high-frequency electrical pulses.

[0029] Specifically, the coplanar waveguide (GSG) of the transmission structure 3 is optimized and designed by electromagnetic simulation software. Different transmission structures 3 are designed according to different radiation antenna input requirements to reduce the transmission loss of high-frequency signals.

[0030] Specifically, the photoconductive switch of the acquisition structure 2 transmits the received electrical signal to the signal acquisition outlet through laser irradiation. The signal acquisition outlet is connected to the radiation structure 1 to achieve the reception of high-frequency electromagnetic waves.

[0031] Specifically, the passive antenna of the radiation structure 1 is optimized and designed by electromagnetic simulation software to achieve the mutual conversion between on-chip current and spatial electromagnetic waves.

[0032] Specifically, the peeling thickness of the photoconductive substrate is 1um, and it is transferred to a low dielectric loss substrate, and at least covers the regions of the excitation structure 4 and the acquisition structure 2.

[0033] Specifically, the device further includes an impedance matching design, which is used to reduce the high-frequency signal transmission loss caused by the sudden change in material transmission properties at the interconnection interface of different substrate materials.

[0034] Specifically, the device generates high-frequency electrical pulses by laser irradiation to excite the photoconductive switch, and converts the high-frequency electrical signal into spatial electromagnetic waves through the passive antenna to achieve the radiation and reception of high-frequency electromagnetic waves.

[0035] Specifically, the operating frequency range of the device is above 110GHz, and it is applicable to wireless communication and radar ranging systems.

[0036] Peeling and transfer of the photoconductive substrate: Use a chemical reagent to corrode the sacrificial layer of the photoconductive substrate to peel off the outermost 1um thick photoconductive substrate; transfer the peeled photoconductive substrate to a low dielectric loss substrate such as silicon, glass, or PCB, and realize device processing through integrated circuit processing.

[0037] Design and implementation of the excitation structure 4: Design gap electrodes on the photoconductive substrate. On the premise of applying a DC bias in advance for a period of time, picosecond electrical pulses are excited by laser irradiation. Optimization of the transmission structure 3: Adopt a coplanar waveguide (GSG) design. Optimize the transmission line through electromagnetic simulation software to reduce the transmission loss of high-frequency signals. Design different transmission structures 3 according to the input requirements of different radiation antennas.

[0038] Design and implementation of the acquisition structure 2: Design gap electrodes on the photoconductive substrate. The left end is the signal acquisition outlet, and the right end is the signal input port. Signal acquisition and transmission are realized through laser irradiation.

[0039] Design and implementation of the radiation structure 1: Adopt a passive antenna design. Optimize through electromagnetic simulation software to realize the mutual conversion between on-chip current and spatial electromagnetic waves.

[0040] Heterogeneous integration design: Adopt the layer-by-layer peeling and transfer technology to integrally integrate the pulse source and the passive antenna on the same chip, avoiding the transmission loss of electrical signals between heterogeneous devices. Optimize the device structure and material layout through simulation design software (such as HFSS) to ensure the transmission efficiency and impedance matching of high-frequency signals. Example 1

[0041] Substrate material processing: Select GaAs as the photoconductive substrate material. Peel off its outermost layer (about 1um thick) through chemical etching method and transfer it to the surface of the silicon substrate. Process the required antenna structure and transmission lines on the silicon substrate to ensure the transmission efficiency of high-frequency signals.

[0042] Design of the excitation structure 4: Set gap electrodes on the peeled photoconductive substrate. Picosecond electrical pulses are excited through DC bias voltage and laser irradiation. Optimize the parameters of the electrode gap and the photoconductive material to improve the frequency and power of the excitation signal.

[0043] Design of the transmission structure 3: Design a low-loss coplanar waveguide using electromagnetic simulation software to minimize the loss of high-frequency signals during transmission. Adjust the structural parameters of the coplanar waveguide according to the input requirements of the radiation antenna to achieve the best transmission effect.

[0044] Design of the acquisition structure 2: Set a photoconductive switch at the acquisition end to receive the spatial electromagnetic wave signal converted by the radiation antenna. Optimize the electrode design of the acquisition structure 2 to improve the sensitivity and efficiency of signal acquisition.

[0045] Design of the radiation structure 1: Design a passive antenna through electromagnetic simulation software to achieve efficient conversion between on-chip current and spatial electromagnetic waves. Optimize the structural parameters of the antenna to improve the radiation efficiency and directivity of the antenna.

[0046] Heterogeneous integration: Adopting interlayer peeling, the excitation structure 4, transmission structure 3, acquisition structure 2, and radiation structure 1 are integrally integrated on the same chip; optimizing the overall layout of the device through simulation design software to ensure the transmission efficiency and impedance matching of high-frequency signals. Embodiment 2

[0047] Substrate material selection: Select glass as the substrate material with low dielectric loss, and transfer the peeled photoconductive substrate to the glass surface; process the required antenna structure and transmission lines on the glass substrate to ensure the transmission efficiency of high-frequency signals.

[0048] Device structure optimization: In the excitation structure 4 and acquisition structure 2, optimize the parameters of the photoconductive material and the electrode design to improve the signal excitation and acquisition efficiency; in the transmission structure 3, adopt a low-loss transmission line design to reduce the transmission loss of high-frequency signals; in the radiation structure 1, optimize the structural parameters of the antenna to improve the radiation efficiency and directivity of the antenna.

[0049] System integration and testing: Integrate the excitation structure 4, transmission structure 3, acquisition structure 2, and radiation structure 1 integrally on the same chip to form a complete high-frequency transceiver chip device.

[0050] Test the chip device to verify its radiation and reception performance of high-frequency electromagnetic waves, and ensure that the overall performance of the system meets the design requirements.

[0051] Through the technical solution of this application, the integration of the high-frequency antenna and the pulse source realizes the high-efficiency radiation and reception of high-frequency electromagnetic waves; Peeling the photoconductive substrate: Using etching technology to cut out a 1-μm thin substrate from the sacrificial layer, which is convenient for transferring it to a low-loss substrate; Low-voltage transmission line optimization: The low-loss transmission line design obtained by simulating through simulation software; Different types of radiation structures 1, such as surface plasmons, dipole antennas, etc., need to be optimized according to the simulation results; Laser excitation and transmission structure 3: The laser excites the photoconductive material to generate high-frequency pulses, and the low-loss transmission line minimizes the loss that occurs during signal transmission; Signal detection and output: The photoconductive switch in the acquisition structure 2 ensures that after receiving the signal from the antenna, it is transmitted back to the left-end region through the high-frequency signal. After detecting the signal in this region, the corresponding electrical signal is emitted using the laser.

[0052] The following technical effects can be achieved through the above technical solutions: Breaking through the frequency limit: Realizing the excitation of high-frequency signals through photoconductive switches, breaking through the frequency bottleneck of traditional electrical pulse sources, and being able to support the radiation and reception of high-frequency electromagnetic waves above 110 GHz; Reducing transmission loss: Optimizing the electrode design and substrate material of the transmission structure 3 significantly reduces the loss of high-frequency signals during transmission, improving the overall efficiency of the system.

[0053] Improving power output: Through an integrated design, the transmission loss of high-frequency signals between heterogeneous devices is reduced, enabling higher power output to meet the actual requirements of high-frequency communication; Flexible modulation and reception functions: Combining with the design scheme of a passive antenna, flexible modulation and reception functions of high-frequency signals are achieved, expanding the application scenarios of high-frequency communication; Miniaturization and integration: By adopting on-chip integration technology, miniaturization and integration of high-frequency transceiver chips are realized, reducing the complexity and cost of the system, and improving the reliability and stability of the system.

[0054] In summary, this high-frequency transceiver chip device based on the heterogeneous integration of on-chip antenna - pulse source realizes the radiation and reception of high-frequency electromagnetic waves above 110 GHz by heterogeneously integrating a high-frequency pulse source and a millimeter-wave antenna; By optimizing the design of the transfer and transmission structure 3 of the photoconductive substrate, the transmission loss of high-frequency signals is reduced, and the radiation power is enhanced; Through the design of the acquisition structure 2, the reception function of high-frequency electromagnetic waves is realized, expanding the application scope of the device; Integrating the high-frequency pulse source and the millimeter-wave antenna on the same chip reduces the device size and improves the integration degree.

[0055] It should be understood that each part of the present invention can be implemented by hardware, software, firmware, or a combination thereof. In the above embodiments, multiple steps or methods can be implemented by software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented by hardware, as in another embodiment, any one or a combination of the following technologies well known in the art can be used: discrete logic circuits with logic gate circuits for implementing logical functions on data signals, application-specific integrated circuits with appropriate combinational logic gate circuits, programmable gate arrays (PGAs), field-programmable gate arrays (FPGAs), etc.

[0056] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit them. Although the present invention has been described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand that the technical solutions of the present invention can be modified or equivalently replaced without departing from the spirit and scope of the technical solutions of the present invention, and they should all be covered by the scope of the claims of the present invention.

Claims

1. A high-frequency transceiver chip device based on the heterogeneous integration of an on-chip antenna and a pulse source, characterized in that Comprising: Photoconductive substrate: The photoconductive substrate is peeled off by chemical reagents and transferred onto a substrate with low dielectric loss. The substrate with low dielectric loss includes silicon, glass or PCB material; Radiation structure: The radiation structure includes a passive antenna for converting high-frequency electrical signals into spatial electromagnetic waves; Collection structure: The collection structure includes a photoconductive switch for receiving high-frequency electromagnetic wave signals. The photoconductive switch is arranged on the photoconductive substrate. The photoconductive switch includes a gap electrode, and the gap electrode transmits the received electrical signal to the signal collection outlet through laser irradiation; Transmission structure: The transmission structure includes a coplanar waveguide for transmitting high-frequency electrical signals; Excitation structure: For generating high-frequency electrical pulses. The excitation structure includes a photoconductive switch. The photoconductive switch is arranged on the photoconductive substrate. The photoconductive switch includes a gap electrode, and the gap electrode excites picosecond electrical pulses through laser irradiation; The radiation structure, collection structure, transmission structure and excitation structure are integrally integrated on the same chip. Through the substrate material and device structure, effective radiation and reception of high-frequency electromagnetic waves are realized.

2. The high-frequency transceiver chip device based on the heterogeneous integration of an on-chip antenna and a pulse source according to claim 1, wherein: The photoconductive switch of the excitation structure excites picosecond electrical pulses through DC bias voltage and laser irradiation. The DC bias voltage is provided from the lower end, and the photoconductive substrate material between the laser irradiation electrodes generates high-frequency electrical pulses.

3. The high-frequency transceiver chip device based on the heterogeneous integration of an on-chip antenna and a pulse source according to claim 1, characterized in that: The coplanar waveguide of the transmission structure is optimized and designed by electromagnetic simulation software. For different radiation antenna input requirements, different transmission structures are designed to reduce the transmission loss of high-frequency signals.

4. The high-frequency transceiver chip device based on the heterogeneous integration of an on-chip antenna and a pulse source according to claim 1, wherein: The photoconductive switch of the collection structure transmits the received electrical signal to the signal collection outlet through laser irradiation. The signal collection outlet is connected to the radiation structure to realize the reception of high-frequency electromagnetic waves.

5. The high-frequency transceiver chip device based on the heterogeneous integration of on-chip antenna and pulse source according to claim 1, wherein: The passive antenna of the radiation structure is optimized and designed by electromagnetic simulation software to realize the mutual conversion between on-chip current and spatial electromagnetic waves.

6. The high-frequency transceiver chip device based on the heterogeneous integration of an on-chip antenna and a pulse source according to claim 1, wherein: The peeling thickness of the photoconductive substrate is 1um and it is transferred onto a substrate with low dielectric loss and at least covers the regions of the excitation structure and the collection structure.

7. The high-frequency transceiver chip device based on the heterogeneous integration of on-chip antenna and pulse source according to claim 1, characterized in that: The device further includes an impedance matching design for reducing the high-frequency signal transmission loss caused by the sudden change in the material transmission properties at the interconnection interface of different substrate materials.

8. The high-frequency transceiver chip device based on the heterogeneous integration of on-chip antenna - pulse source according to claim 1, wherein: The device excites the photoconductive switch through laser irradiation to generate high-frequency electrical pulses, and converts the high-frequency electrical signals into spatial electromagnetic waves through the passive antenna to realize the radiation and reception of high-frequency electromagnetic waves.

9. The high-frequency transceiver chip device based on the heterogeneous integration of on-chip antenna and pulse source according to claim 1, wherein: The operating frequency range of the device is above 110GHz and it is applicable to wireless communication and radar ranging systems.

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