Light detection device and electronic apparatus

Abstract

The light detection device of the present invention comprises: a plurality of lenses; a first substrate including a plurality of image pixels, each of the plurality of image pixels including a first photodiode configured to output a first signal based on first light passing through a first portion of the plurality of lenses; a second substrate including a plurality of depth pixels, each of the plurality of depth pixels including a second photodiode configured to output a second signal based on second light passing through a second portion of the plurality of lenses; and a third substrate including a first processing circuit and a second processing circuit. The first processing circuit is configured to process the first signal into image data, and the second processing circuit is configured to process the second signal into depth data. In the stacking direction, the second substrate is disposed on the third substrate, the first substrate is disposed on the second substrate, and the plurality of lenses are disposed on the first substrate.

Description

[0001] [Cross - reference to related applications]

[0002] This application claims the benefit of Japanese Priority Patent Application JP 2022 - 192057, filed on November 30, 2022, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present disclosure relates to a light detection device and an electronic device capable of acquiring two - dimensional image information and depth information. Background Art

[0004] For example, Patent Document 1 discloses a device for acquiring a two - dimensional image and a depth image, in which a first sensor including a plurality of two - dimensional image pixels and a plurality of through - windows and a second sensor including a plurality of depth pixels are stacked, and the plurality of through - windows are configured to face the plurality of depth pixels.

[0005] [Citation List]

[0006] [Patent Document]

[0007] [Patent Document 1] U.S. Patent Application Publication No. 2021 / 0305206 Summary of the Invention

[0008] [Technical Problem]

[0009] Incidentally, there is a need for a light detection device capable of acquiring two - dimensional image information and depth information to suppress color mixing.

[0010] There is a desire to provide a light detection device and an electronic device capable of suppressing color mixing.

[0011] [Solution to the Problem]

[0012] According to the present disclosure, there is provided a light detection device including a plurality of lenses; a first substrate including a plurality of image pixels, each of the plurality of image pixels including a first photodiode configured to output a first signal based on first light passing through a first portion of the plurality of lenses; a second substrate including a plurality of depth pixels, each of the plurality of depth pixels including a second photodiode configured to output a second signal based on second light passing through a second portion of the plurality of lenses, the second portion including some or all of the first portion; and a third substrate including a first processing circuit and a second processing circuit, the first processing circuit being configured to process the first signal into image data, the second processing circuit being configured to process the second signal into depth data, wherein, in a stacking direction, the second substrate is disposed on the third substrate, the first substrate is disposed on the second substrate, and the plurality of lenses are disposed on the first substrate.

[0013] There is also provided a light detection device, which includes a plurality of lenses; a first substrate including a plurality of image pixels, each of the plurality of image pixels including a first photodiode configured to output a first signal of data based on first light passing through a first portion of the plurality of lenses; a second substrate including a plurality of depth pixels, each of the plurality of depth pixels including a second photodiode configured to output a second signal based on second light passing through a second portion of the plurality of lenses, the second portion including some or all of the first portion; and a third substrate including a first processing circuit and a second processing circuit, the first processing circuit being configured to process the first signal into image data, the second processing circuit being configured to process the second signal into depth data, and the light passing through one of the plurality of lenses being received by one of the plurality of image pixels and one of the plurality of depth pixels.

[0014] There is also provided an electronic device, which includes a plurality of lenses; a first substrate including a plurality of image pixels, each of the plurality of image pixels including a first photodiode configured to output a first signal of data based on first light passing through a first portion of the plurality of lenses; a second substrate including a plurality of depth pixels, each of the plurality of depth pixels including a second photodiode configured to output a second signal based on second light passing through a second portion of the plurality of lenses, the second portion including some or all of the first portion; and a third substrate including a first processing circuit and a second processing circuit, the first processing circuit being configured to process the first signal into image data, the second processing circuit being configured to process the second signal into depth data, wherein, in a stacking direction, the second substrate is disposed on the third substrate, the first substrate is disposed on the second substrate, and the plurality of lenses are disposed on the first substrate.

[0015] In some aspects of the present disclosure, the light passing through one of the plurality of lenses is received by one of the plurality of image pixels and one of the plurality of depth pixels. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 is a schematic diagram of an example of a cross-sectional configuration of a light detection device according to an embodiment of the present disclosure.

[0017] Figure 2 shows Figure 1 an exploded perspective configuration example of the light detection device shown.

[0018] Figure 3 is Figure 1 an equivalent circuit diagram of a pixel for two-dimensional image information acquisition shown.

[0019] Figure 4 is Figure 1 The equivalent circuit diagram of the pixel for depth information acquisition shown in the figure.

[0020] Figure 5 is Figure 1 A schematic plan view of an example of the layout of the color filter shown in the figure.

[0021] Figure 6 is Figure 1 A schematic cross-sectional view of an example of the structure of the light-receiving element provided in the pixel for depth information acquisition shown in the figure.

[0022] Figure 7 is Figure 1 A perspective view of an example of the positional relationship between the pixel for two-dimensional image information acquisition and the pixel for depth information acquisition in the light detection device shown in the figure.

[0023] Figure 8A is Figure 1 A schematic cross-sectional view of an example of the manufacturing method of the light detection device shown in the figure.

[0024] Figure 8B is Figure 8A A schematic cross-sectional view of the subsequent steps.

[0025] Figure 8C is Figure 8B A schematic cross-sectional view of the subsequent steps.

[0026] Figure 8D is Figure 8C A schematic cross-sectional view of the subsequent steps.

[0027] Figure 8E is Figure 8D A schematic cross-sectional view of the subsequent steps.

[0028] Figure 8F is Figure 8E A schematic cross-sectional view of the subsequent steps.

[0029] Figure 8G is Figure 8F A schematic cross-sectional view of the subsequent steps.

[0030] Figure 9A is Figure 1 A schematic cross-sectional view of another example of the manufacturing method of the light detection device shown in the figure.

[0031] Figure 9B is Figure 9A A schematic cross-sectional view of the subsequent steps.

[0032] Figure 9C is Figure 9B A schematic cross-sectional view of the subsequent steps.

[0033] Figure 10 is a timing chart showing Figure 1 an operation example of the illustrated light detection device.

[0034] Figure 11 is a schematic plan view showing an example of the layout of a color filter according to Modification 1 of the present disclosure.

[0035] Figure 12 is a schematic plan view showing another example of the layout of a color filter according to Modification 1 of the present disclosure.

[0036] Figure 13 is a schematic plan view showing another example of the layout of a color filter according to Modification 1 of the present disclosure.

[0037] Figure 14 is a schematic view showing an example of the cross-sectional configuration of a light detection device according to Modification 2 of the present disclosure.

[0038] Figure 15 is a schematic view showing an example of the cross-sectional configuration of a light detection device according to Modification 3 of the present disclosure.

[0039] Figure 16A is Figure 15 a schematic cross-sectional view showing another example of the manufacturing method of the illustrated light detection device.

[0040] Figure 16B is Figure 16A a schematic cross-sectional view of the subsequent steps.

[0041] Figure 16C is Figure 16B a schematic cross-sectional view of the subsequent steps.

[0042] Figure 17 is a view showing an unfolded perspective configuration example of a light detection device according to Modification 4 of the present disclosure.

[0043] Figure 18 is a view showing an unfolded perspective configuration example of a light detection device according to Modification 4 of the present disclosure.

[0044] Figure 19 is a schematic view showing an example of the cross-sectional configuration of a light detection device according to Modification 5 of the present disclosure.

[0045] Figure 20 is a schematic view showing another example of the cross-sectional configuration of a light detection device according to Modification 5 of the present disclosure.

[0046] Figure 21 is a schematic view showing an example of the cross-sectional configuration of a light detection device according to Modification 6 of the present disclosure.

[0047] Figure 22A is Figure 21 A schematic cross-sectional view of an example of a method for manufacturing the optical detection device shown.

[0048] Figure 22B is Figure 22A A schematic cross-sectional view of subsequent steps.

[0049] Figure 22C is Figure 22B A schematic cross-sectional view of subsequent steps.

[0050] Figure 22D is Figure 22C A schematic cross-sectional view of subsequent steps.

[0051] Figure 22E is Figure 22D A schematic cross-sectional view of subsequent steps.

[0052] Figure 22F is Figure 22E A schematic cross-sectional view of subsequent steps.

[0053] Figure 23 A schematic diagram of an example of the cross-sectional configuration of an optical detection device according to Modification Example 7 of the present disclosure.

[0054] Figure 24 is Figure 23 A schematic plan view of a wiring layout example in the wiring layer of the optical detection device shown.

[0055] Figure 25 A schematic diagram of another example of the cross-sectional configuration of an optical detection device according to Modification Example 7 of the present disclosure.

[0056] Figure 26 A schematic diagram of another example of the cross-sectional configuration of an optical detection device according to Modification Example 7 of the present disclosure.

[0057] Figure 27 A schematic diagram of an example of the cross-sectional configuration of an optical detection device according to Modification Example 8 of the present disclosure.

[0058] Figure 28A is Figure 27 A schematic cross-sectional view of an example of a method for manufacturing the optical detection device shown.

[0059] Figure 28B is Figure 28A A schematic cross-sectional view of subsequent steps.

[0060] Figure 28C is Figure 28B A schematic cross-sectional view of subsequent steps.

[0061] Figure 28DYes Figure 28C Schematic cross-sectional view of subsequent steps.

[0062] Figure 28E Yes Figure 28D Schematic cross-sectional view of subsequent steps.

[0063] Figure 28F Yes Figure 28E Schematic cross-sectional view of subsequent steps.

[0064] Figure 29 Schematic diagram of an example of the cross-sectional configuration of a light detection device according to Modification 9 of the present disclosure.

[0065] Figure 30 Schematic diagram of an example of the cross-sectional configuration of a light detection device according to Modification 10 of the present disclosure.

[0066] Figure 31 Schematic diagram of an example of the cross-sectional configuration of a light detection device according to Modification 11 of the present disclosure.

[0067] Figure 32 Schematic diagram of another example of the cross-sectional configuration of a light detection device according to Modification 11 of the present disclosure.

[0068] Figure 33 Schematic diagram of another example of the cross-sectional configuration of a light detection device according to Modification 11 of the present disclosure.

[0069] Figure 34 Schematic diagram of another example of the cross-sectional configuration of a light detection device according to Modification 11 of the present disclosure.

[0070] Figure 35 Perspective view of an example of the configuration of a pixel for obtaining two-dimensional image information of a light detection device according to Modification 12 of the present disclosure and the positional relationship between the pixel for obtaining two-dimensional image information and the pixel for obtaining depth information.

[0071] Figure 36 Shows including Figure 1 Block diagram of an example of the configuration of an electronic device including the light detection device shown.

[0072] Figure 37A Is using Figure 1 Schematic diagram of an example of the overall configuration of a light detection system using the light detection device shown, etc.

[0073] Figure 37B Shows Figure 37A Diagram of an example of the circuit configuration of the light detection system shown.

[0074] Figure 38 View showing an example of the schematic configuration of an endoscopic surgical system.

[0075] Figure 39 is a block diagram showing an example of the functional configuration of a camera and a camera control unit (CCU).

[0076] Figure 40 is a block diagram showing an example of the schematic configuration of a vehicle control system.

[0077] Figure 41 is a diagram for assisting in explaining an example of the mounting positions of an external information detection unit and an imaging unit. Detailed implementation manners

[0078] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. The following description is merely a specific example of the present disclosure, and the present disclosure is not limited to the following aspects. In addition, the present disclosure is not limited to the arrangement, dimensions, dimensional ratios, etc. of each component shown in the drawings. Note that the description will be given in the following order.

[0079] 1. Embodiment (example of an optical detection device in which pixels for two-dimensional image acquisition and pixels for depth information acquisition overlap each other and substrates including respective logic circuits are stacked)

[0080] 2. Modification 1 (another example of the configuration of the optical detection device)

[0081] 3. Modification 2 (another example of the configuration of the optical detection device)

[0082] 4. Modification 3 (another example of the configuration of the optical detection device)

[0083] 5. Modification 4 (another example of the configuration of the optical detection device)

[0084] 6. Modification 5 (another example of the configuration of the optical detection device)

[0085] 7. Modification 6 (another example of the configuration of the optical detection device)

[0086] 8. Modification 7 (another example of the configuration of the optical detection device)

[0087] 9. Modification 8 (another example of the configuration of the optical detection device)

[0088] 10. Modification 9 (another example of the configuration of the optical detection device)

[0089] 11. Modification 10 (another example of the configuration of the optical detection device)

[0090] 12. Modification 11 (another example of the configuration of the optical detection device)

[0091] 13. Another Example of the Configuration of the Optical Detection Device

[0092] 14. Application Example

[0093] 15. Practical Application Example

[0094] <1. Embodiment>

[0095] [Schematic Configuration of the Optical Detection Device]

[0096] Figure 1 An example of the cross-sectional configuration of an optical detection device (optical detection device 1) according to an embodiment of the present disclosure is schematically shown. The optical detection device 1 includes, for example, three substrates (first substrate 100, second substrate 200, and third substrate 300). The first substrate 100 includes a plurality of pixels 110 for acquiring two-dimensional image information. The second substrate 200 includes a plurality of pixels 210 for acquiring depth information. The third substrate 300 includes a logic circuit that processes pixel signals output from the plurality of pixels 110 and the plurality of pixels 210. The optical detection device 1 is an optical detection device having a three-dimensional configuration, in which the first substrate 100, the second substrate 200, and the third substrate 300 are stacked in this order.

[0097] The first substrate 100 includes a light-receiving layer 100S and a wiring layer 100T. The second substrate 200 includes a light-receiving layer 200S and wiring layers 200T-1 and 200T-2. The third substrate 300 includes a semiconductor layer 300S and a wiring layer 300T. Here, for convenience, the wiring layers included in each of the first substrate 100, the second substrate 200, and the third substrate 300 and the interlayer insulating films around the wiring layers are collectively referred to as the wiring layers (100T, 200T-1, 200T-2, 300T) provided on the respective substrates (first substrate 100, second substrate 200, and third substrate 300). The first substrate 100, the second substrate 200, and the third substrate 300 are stacked in this order, and are arranged in the order of the light-receiving layer 100S, the wiring layer 100T, the wiring layer 200T-1, the light-receiving layer 200S, the wiring film 200T-2, the wiring layer 300T, and the semiconductor layer 300S along the stacking direction (Z-axis direction). The specific configurations of the first substrate 100, the second substrate 200, and the third substrate 300 will be described later. Figure 1The arrow shown in [Fig.] indicates the incident direction of light L on the light detection device 1. In this specification, for convenience, in a cross-sectional view, in some cases, the light incident side in the light detection device 1 may be referred to as "lower", "lower side", and "below", and the opposite side of the light incident side may be referred to as "upper", "upper side", and "above". In addition, in this specification, for convenience, in some cases, regarding a substrate including a light receiving layer and a wiring layer, the side of the wiring layer may be referred to as the front, and the side of the semiconductor layer may be referred to as the back. Note that the descriptions in this specification are not limited to the above names. The light detection device 1 is, for example, a back-illuminated imaging device in which light is incident from the back side of the first substrate 100 including the photodiode PD.

[0098] Figure 2 An example of the schematic configuration of the light detection device 1 is shown.

[0099] The first substrate 100 is provided with, for example, a plurality of pixels 110 that acquire two-dimensional image information by detecting wavelengths in the visible light region on the light receiving layer 100S. The plurality of pixels 110 are arranged in an array without gaps, for example, in the row direction and the column direction to form a pixel array portion 100A. The pixel array portion 100A is provided with a plurality of pixels 110, a plurality of row driving signal lines 512, and a plurality of vertical signal lines (column readout lines) 513. The first substrate 100 is also provided with a readout portion 511. The row driving signal lines 512 drive, for example, a plurality of pixels 110 arranged side by side in the row direction in the pixel array portion 100A. As will be described in detail later, each of the plurality of pixels 110 is provided with a plurality of transistors. In order to drive each of the plurality of transistors, the row driving signal line 513 is connected to each pixel 110. The pixel 110 is connected to each vertical signal line 513, and the pixel signal from the pixel 110 is read out by the readout portion 511 via each vertical signal line 513.

[0100] The readout portion 511 includes, for example, a load circuit portion that forms a source follower circuit with the plurality of pixels 110. The readout portion 511 may include an amplification circuit portion that amplifies the signal read out from the pixel 110 via the vertical signal line 513. The readout portion 511 may include a noise processing portion. In the noise processing portion, for example, as a result of photoelectric conversion, the system noise level is removed from the signal read out from the pixel 110.

[0101] The second substrate 200 is provided with, for example, a plurality of pixels 210 that acquire depth information by detecting wavelengths in the near-infrared region in the light receiving layer 200S. For example, the plurality of pixels 210 are arranged in an array in the row direction and the column direction to form a pixel array portion 200A. Although not shown, a bias voltage application portion may also be formed in the second substrate. The bias voltage application portion applies a bias voltage to each of the plurality of pixels 210 in the pixel array portion 200A.

[0102] As described above, the third substrate 300 includes a logic circuit that processes pixel signals output from a plurality of pixels 110 for acquiring two-dimensional image information and a plurality of pixels 210 for acquiring depth information. Specifically, the third substrate 300 includes, for example, an input / output unit 531, a signal processing unit 532, a pixel circuit unit 533, a histogram generation unit 534, and a readout unit 535.

[0103] The input / output unit 531 includes, for example, an input unit that inputs a reference clock signal, a timing control signal, characteristic data, etc. from outside the device to the light detection device 1, and an output unit that outputs image data to the outside of the device. The timing control signal is, for example, a vertical synchronization signal, a horizontal synchronization signal, etc. The characteristic data will be stored in, for example, the signal processing unit 532. The input unit includes, for example, an input terminal, an input circuit unit, an input amplitude change unit, an input data conversion circuit unit, and a power supply unit. The image data is, for example, image data captured by the light detection device 1, image data that has been signal-processed by the signal processing unit 532, or other image data. The output unit includes, for example, an output data conversion circuit unit, an output amplitude change unit, an output circuit unit, and an output terminal.

[0104] The input terminal is an external terminal to which data is to be input. The input circuit unit is used to take in the signal input to the input terminal into the light detection device 1. In the input amplitude change unit, the amplitude of the signal taken in by the input circuit unit is changed to an amplitude that is easy to use inside the light detection device 1. In the input data conversion circuit unit, the arrangement of the data string of the input data is changed. The input data conversion circuit unit is constituted by, for example, a serial-parallel conversion circuit. In this serial-parallel conversion circuit, the serial signal received as the input data is converted into a parallel signal. Note that in the input unit, the input amplitude change unit and the input data conversion circuit unit can be omitted. The power supply unit supplies power that is set to various voltages required in the light detection device 1 based on the power supplied from the outside to the light detection device 1.

[0105] When the light detection device 1 is connected to an external storage device, the input unit can be provided with a memory interface circuit for receiving data from the external storage device. The external storage device can be, for example, a flash memory, SRAM, DRAM, etc.

[0106] The output data conversion circuit section is constituted by, for example, a parallel-serial conversion circuit. In the output data conversion section, the parallel signal used inside the light detection device 1 is converted into a serial signal. The output amplitude change section changes the amplitude of the signal used inside the light detection device 1. A signal with a changed amplitude is easily used by an external device connected to the outside of the light detection device 1. The output circuit section is a circuit that outputs data from the inside of the light detection device 1 to the outside of the device, and the output circuit section drives the wiring outside the light detection device 1 connected to the output terminal. In the output terminal, data is output from the light detection device 1 to the outside of the device. In the output section, the output data conversion circuit section and the output amplitude change section may be omitted.

[0107] When the light detection device 1 is connected to an external storage device, the output section may be provided with a memory interface circuit that outputs data to the external storage device. The external storage device may be, for example, a flash memory, SRAM, DRAM, etc.

[0108] The signal processing section 532 is a circuit that performs various types of signal processing on the data obtained as a result of photoelectric conversion (in other words, the data obtained as a result of the imaging operation in the light detection device 1). The signal processing section 532 includes, for example, an image signal processing circuit section and a data holding section. The signal processing section 532 may include a processor section.

[0109] An example of the signal processing performed in the signal processing section 532 is tone curve correction processing. When the imaged data after AD conversion is data obtained by capturing an image of a dark subject, the tone curve correction processing increases the gray level, and when the imaged data is data obtained by capturing an image of a bright subject, it decreases the gray level. In this case, it is desirable to make the data holding section of the signal processing section 532 pre-store the characteristic data of the tone curve, such as how to correct the gray level of the imaged data based on what tone curve.

[0110] The pixel circuit section 533 includes, for example, a circuit (pixel circuit 330) that reads out the pixel signals output from the respective pixels 210. The pixel circuit section 533 includes, for example, a quenching resistor 340 and an inverter 350 connected to the light receiving elements provided in each of the plurality of pixels 210 (refer to Figure 4 ).

[0111] The histogram generation unit 534 is configured to generate a histogram of the time-of-flight Ttof of the light pulses detected by the pixels 210 based on the light reception timing of the pixels 210. Specifically, the histogram generation unit 534 calculates the time-of-flight Ttof of the light pulses detected by the pixels 210 based on the light reception timing of the pixels 210. For example, the light detection system 2000 described later emits light pulses a plurality of times, thereby allowing the histogram generation unit 534 to accumulate data on the time-of-flight Ttof for each of the plurality of pixels 210. The histogram generation unit 534 generates a histogram of the time-of-flight Ttof for each of the plurality of pixels 210 based on the accumulated data on the time-of-flight Ttof. Then, the histogram generation unit 534 specifies the most frequent time-of-flight Ttof based on the histogram of the time-of-flight Ttof of the pixels 210 and determines the time-of-flight Ttolf as the time-of-flight Ttof of the pixel 210.

[0112] The readout unit 535 includes, for example, an analog-to-digital converter (ADC). In the analog-to-digital converter, the signal read out from the pixel 110 or the analog signal that has undergone the above-described noise processing is converted into a digital signal. The ADC includes, for example, a comparator unit and a counter unit. In the comparator unit, the analog signal to be converted and the reference signal to be compared are compared with each other. In the counter unit, the time until the comparison result in the comparator unit is inverted is measured.

[0113] The third substrate 300 may further include, for example, a row driving unit and a timing control unit. The row driving unit includes a row address control unit (in other words, a row decoder unit) that determines the position of the row for pixel driving and a row driving circuit unit that generates signals to drive the plurality of pixels 110. The timing control unit supplies signals for controlling the timing to the row driving unit and the readout units 511 and 535 based on the reference clock signal and the timing control signal input to the device.

[0114] The first substrate 100, the second substrate 200, and the third substrate 300 are electrically connected to each other via wiring layers 100T, 200T-1, 200T-2, and 300T. For example, the first substrate 100 and the second substrate 200 are electrically connected to each other by hybrid bonding. Specifically, the first substrate 100 includes a plurality of contact portions 101 on the bonding surface of the wiring layer 100T, the second substrate 200 includes a plurality of contact portions 201 on the bonding surface of the wiring layer 200T-1, and the bonding surface of the wiring layer 100T and the bonding surface of the wiring layer 200T-1 face each other. Each of the plurality of contact portions 101 and 201 is an electrode formed of a conductive material. Examples of the conductive material include metal materials such as copper (Cu), aluminum (Al), and gold (Au). For example, the second substrate 200 and the third substrate 300 are electrically connected to each other by hybrid bonding. Specifically, the second substrate 200 includes a plurality of contact portions 203 on the bonding surface of the wiring layer 200T-2, the third substrate 300 includes a plurality of contact portions 301 on the bonding surface of the wiring layer 300T, and the bonding surface of the wiring layer 200T-2 and the bonding surface of the wiring layer 300T face each other. Each of the plurality of contact portions 203 and 301 is an electrode formed of a conductive material. Examples of the conductive material include metal materials such as Cu, Al, and Au. For example, the first substrate 100 and the third substrate 300 are electrically connected to each other through through-holes 202. Specifically, the through-holes 202 penetrate the second substrate 200 from the bonding surface of the wiring layer 200T-1 and the first substrate 100 to the bonding surface of the wiring layer 200T-2 and the third substrate 300. Each through-hole 202 is a through-electrode formed of a conductive material. Examples of the conductive material include metal materials such as Cu, Al, and Au. In the second substrate 200 and the third substrate 300, the plurality of contact portions 203 and 301 are directly bonded to each other to enable input and / or output of signals. In the first substrate 100 and the third substrate 300, the upper surface of the through-hole 202 is directly bonded to the contact portion 101, and the lower surface of the through-hole 202 is directly bonded to the contact portion 301 to enable input and / or output of signals.

[0115] The pixel array portion 100A and the pixel array portion 200A are formed on the respective substrates so as to overlap in the stacking direction of the first substrate 100, the second substrate 200, and the third substrate 300. In particular, the area of the pixel array portion 100A is larger than the area of the pixel array portion 200A, and in a plan view, the pixel array portion 200A is included in the pixel array portion 100A, as Figure 2 shown.

[0116] The pixel signals output from the first substrate 100 are transmitted, for example, to the readout unit 535 of the third substrate 300 through the vertical signal lines 513 for each pixel 110 via the readout unit 511 on the outer periphery of the chip, and are processed by the signal processing unit 532. The pixel signals output from the second substrate 200 are output, for example, to the pixel circuit unit 533 of the third substrate 300 for each pixel 210, processed by it, and then a histogram is generated and output by the histogram generation unit 534. In the third substrate 300, the pixel circuits 130 of the pixels 110 for acquiring two-dimensional image information and the pixel circuits 330 of the pixels 210 for acquiring depth information exist in a mixed manner and can operate synchronously.

[0117] [Circuit configuration of pixels for acquiring two-dimensional image information]

[0118] Figure 3 It is an equivalent circuit diagram showing an example of the configuration of the pixel 110. The pixel 110 includes a pixel circuit 130 and a vertical signal line 513 connected to the pixel circuit 130. The pixel circuit 130 includes, for example, three transistors. Specifically, the pixel circuit 130 includes an amplification transistor AMP, a selection transistor SEL, and a reset transistor RST.

[0119] The pixel 110 includes, for example, a transfer transistor TR electrically connected to a light receiving unit 111 (photodiode PD) and a floating diffusion section FD electrically connected to the transfer transistor TR. In the photodiode PD, the cathode is electrically connected to the source of the transfer transistor TR, and the anode is electrically connected to the reference potential line (e.g., ground). The photodiode PD performs photoelectric conversion on the incident light and generates charge carriers corresponding to the received light amount. The transfer transistor TR is, for example, an n-type CMOS (complementary metal oxide semiconductor) transistor. In the transfer transistor TR, the drain is electrically connected to the floating diffusion section FD, and the gate is electrically connected to the drive signal line. This drive signal line is a part of the multiple row drive signal lines 512 connected to the pixel 110. The transfer transistor TR transfers the charge carriers generated by the photodiode PD to the floating diffusion section FD. The floating diffusion section FD is an n-type transfer layer region formed in the p-type semiconductor layer. The floating diffusion section FD is a charge holding device that temporarily holds the charge carriers transferred from the photodiode PD, and is a charge-voltage conversion device that generates a voltage corresponding to the charge amount.

[0120] The floating diffusion section FD is electrically connected to the gate of the amplifying transistor AMP and the source of the reset transistor RST. The drain of the reset transistor RST is connected to the power supply line VDD, and the gate of the reset transistor RST is connected to the drive signal line. This drive signal line is a part of the plurality of row drive signal lines 512 connected to the pixel 110. The gate of the amplifying transistor AMP is connected to the floating diffusion section FD, the drain of the amplifying transistor AMP is connected to the power supply line VDD, and the source of the amplifying transistor AMP is connected to the drain of the selection transistor SEL. The source of the selection transistor SEL is connected to the vertical signal line 513, and the gate of the selection transistor SEL is connected to the drive signal line. This drive signal line is a part of the plurality of row drive signal lines 512 connected to the pixel 110.

[0121] When the transfer transistor TR enters the conducting state, the transfer transistor TR transfers the charge carriers of the photodiode PD to the floating diffusion section FD. The gate of the transfer transistor TR includes, for example, a so-called vertical electrode and is provided to extend from the front surface 100S2 of the light receiving layer 100S to the depth reaching the photodiode PD. The reset transistor RST resets the potential of the floating diffusion section FD to a predetermined potential. When the reset transistor RST enters the conducting state, the potential of the floating diffusion section FD is reset to the potential of the power supply line VDD. The selection transistor SEL controls the output timing of the pixel signal from the pixel circuit 130. The amplifying transistor AMP generates a signal of a voltage corresponding to the level of the charge carriers held in the floating diffusion section FD as the pixel signal. The amplifying transistor AMP is connected to the vertical signal line 513 via the selection transistor SEL. For example, in the readout section 511, the amplifying transistor AMP and the load circuit section connected to the vertical signal line 513 together form a source follower. When the selection transistor SEL enters the conducting state, the amplifying transistor AMP outputs the voltage of the floating diffusion section FD to the readout section 511 via the vertical signal line 513. Each of the reset transistor RST, the amplifying transistor AMP, and the selection transistor SEL is, for example, an N-type CMOS transistor.

[0122] The selection transistor SEL can be provided between the power supply line VDD and the amplifying transistor AMP. In this case, the drain of the reset transistor RST is electrically connected to the power supply line VDD and the drain of the selection transistor SEL. The source of the selection transistor SEL is electrically connected to the drain of the amplifying transistor AMP, and the gate of the selection transistor SEL is electrically connected to the row drive signal line 512. The source (the output terminal of the pixel circuit 130) of the amplifying transistor AMP is electrically connected to the vertical signal line 513, and the gate of the amplifying transistor AMP is electrically connected to the source of the reset transistor RST.

[0123] In the light detection device 1, as Figure 3As shown, a light receiving unit 111 (photodiode PD), a transfer transistor TR electrically connected to the photodiode PD, a floating diffusion section FD electrically connected to the transfer transistor TR, and the pixel circuit 130 are provided in the first substrate 100. For example, the pixel signal output to the readout unit 511 is transmitted to the readout unit 535 of the third substrate 300 via the through hole 202, and the signal processing unit 532 performs various types of processing.

[0124] Note that the pixel circuit 130 may further include an FD conversion gain switch transistor (FDG). The FDG is arranged between the floating diffusion section FD and the reset transistor RST. That is, the source of the FDG is electrically connected to the floating diffusion section FD, and the drain of the FDG and the source of the reset transistor RST are electrically connected to each other.

[0125] When changing the gain of the charge-voltage conversion in the floating diffusion section FD, the FDG is used. Generally, when shooting at a dark location, the pixel signal is small. When performing charge-voltage conversion based on Q = CV, the larger capacitance (FD capacitance C) of the floating diffusion section FD during charge-voltage conversion causes the V to become smaller when converted to a voltage by the amplifying transistor AMP. On the other hand, since the pixel signal becomes larger at a bright location, unless the FD capacitance C is large, the floating diffusion section FD cannot receive the charge carriers of the photodiode PD. In addition, the FD capacitance C needs to be large to allow the V not to be too large when converted to a voltage by the amplifying transistor AMP during charge-voltage conversion by the amplifying transistor AMP (in other words, to allow V to become smaller). In view of the above, when the FDG is turned on, the gate capacitance of the FDG is increased, so the entire FD capacitance C is increased. On the other hand, when the FDG is turned off, the entire FD capacitance C is decreased. In this way, by switching the on and off of the FDG to allow the FD capacitance C to be variable, the conversion efficiency can be switched. The FDG is, for example, an N-type CMOS transistor.

[0126] In addition, Figure 3 An example in which one pixel circuit 130 is connected to one pixel 110 is shown, but one pixel circuit 130 may be connected to a pixel block including a plurality of pixels 110. For example, in a pixel block including four pixels 110 configured in 2 rows × 2 columns, the four pixels 110 share one pixel circuit 130, and the pixel circuit 130 operates in a time-division manner so that the respective pixel signals of the four pixels 110 can be sequentially output to the vertical signal line 513. The state in which one pixel circuit 130 is connected to a plurality of pixels 110 and the pixel signals of the plurality of pixels 110 are output by one pixel signal circuit 130 in a time-division manner can be interpreted as: "A plurality of pixel signals 110 share one pixel information circuit 130".

[0127] Note that the number of pixels 110 sharing a pixel circuit 130 can be four or less. For example, two or eight pixels 110 can share the pixel circuit 130.

[0128] [Circuit Configuration of Pixels for Depth Information Acquisition]

[0129] Figure 4 is an equivalent circuit diagram showing an example of the configuration of pixel 210. As Figure 4 shown, pixel 210 includes, for example, a light receiving element (denoted by reference numeral 211 for convenience in Figure 4 ), a quenching resistor 340 including a p-type MOSFET (metal oxide semiconductor field effect transistor), and an inverter 350 including, for example, a complementary MOSFET.

[0130] The light receiving element converts incident light into an electrical signal through photoelectric conversion and outputs the converted electrical signal. Incidentally, the light receiving element converts incident light (photons) into an electrical signal through photoelectric conversion and outputs a pulse corresponding to the incidence of photons. The light receiving element is, for example, a SPAD (single photon avalanche diode) element. For example, the SPAD element has a characteristic in which an avalanche multiplication region X (depletion layer) is formed by applying a large negative voltage to the cathode, and electrons generated in response to the incidence of one photon cause avalanche multiplication, resulting in the flow of a large current. In the light receiving element, for example, the anode is connected to the bias voltage application unit, and the cathode is connected to the source terminal of the quenching resistor 340. The device voltage V B is applied from the bias voltage application unit to the anode of the light receiving element.

[0131] The quenching resistor 340 is connected in series with the light receiving element and has a source terminal connected to the cathode of the light receiving element and a drain terminal connected to a power supply (not shown). The excitation voltage V E is applied from the power supply to the drain terminal of the quenching resistor 340. When the voltage of the electrons multiplied by the light receiving element reaches the negative voltage V BD , the quenching resistor 340 performs quenching, in which the electrons multiplied by the light receiving element are released to restore the voltage to the initial voltage.

[0132] In the inverter 350, the input terminal is connected to the cathode of the light receiving element and the source terminal of the quenching resistor 340, and the output terminal is connected to a subsequent arithmetic processing unit (not shown). The inverter 350 outputs a light reception signal based on the charge carriers (signal charges) multiplied by the light receiving element. More specifically, the inverter 350 shapes the voltage generated by the electrons multiplied by the light receiving element. Then, starting from the arrival time of one photon, the inverter 350 outputs, via the through hole 202 and via the contact portions 203 and 301, to the signal processing unit 532 whereFigure 4 The optical reception signal (APD OUT) of the pulse waveform shown. For example, the signal processing unit 532 performs arithmetic processing for determining the distance to the subject based on the timing of generating pulses indicating the arrival time of each photon in the optical reception signal, and determines the distance for each pixel 210. Then, based on these distances, a distance image is generated in which the distances to the subject detected by the plurality of pixels 210 are arranged in a planar manner.

[0133] Note that, in addition to the SPAD element, an APD (avalanche photodiode) element can also be used as the optical reception element.

[0134] [Specific Configuration of Optical Detection Device]

[0135] The first substrate 100 sequentially includes an optical reception layer 100S and a wiring layer 100T starting from the light incident side S1. The optical reception layer 100S is formed of, for example, a silicon (Si) substrate. The optical reception layer 100S includes, for example, a p-well in a predetermined region and an n-type semiconductor region in other regions. In the optical reception layer 100S, for example, a p-n junction type photodiode PD is provided for each pixel 110 through the p-well and the n-type semiconductor region.

[0136] As the optical reception layer 100S, in addition to the Si substrate, a semiconductor substrate containing germanium (Ge), selenium (Se), carbon (C), gallium arsenide (GaAs), gallium phosphide (GaP), nickel antimonide (NiSb), indium antimonide (InSb), indium arsenide (InAs), indium phosphide (InP), gallium nitride (GaN), silicon carbide (SiC), or indium gallium arsenide (InGaAs) can also be used.

[0137] The optical reception layer 100S is also provided with a separation portion 112 between adjacent pixels 110. The separation portion 112 is for electrically and optically separating adjacent pixels 110 from each other, and is provided in a lattice pattern on the pixel array portion 100A. The separation portion 112 is formed of, for example, a trench having an STI (shallow trench isolation) structure, a DTI (deep trench isolation) structure, or an FFTI (full trench isolation) structure formed from the back surface 100S1 side of the optical reception layer 100S toward the front surface 100S2. The separation portion 112 includes, for example, a light-shielding film 113 and an insulating film 114. The light-shielding film 113 is buried in the trench and is formed using a light-shielding metal material such as tungsten (W), aluminum (Al), copper (Cu), cobalt (Co), nickel (Ni), or titanium (Ti) or a silicon compound thereof. In addition, the light-shielding film 113 can be formed using polysilicon (Poly-Si). The insulating film 114 is provided between the optical reception layer 100S and the light-shielding film 113 to coat the side and bottom surfaces of the trench. The insulating film 114 is formed using, for example, silicon oxide (SiO). The separation portion 112 can also be formed by, for example, diffusing p-type impurities.

[0138] For example, near the front surface 100S2 of the light receiving layer 100S, the above-described pixel circuit 130 is provided for each pixel 110. Specifically, for example, near the front surface 100S2 of the light receiving layer 100S, a floating diffusion portion FD, a transfer transistor TR, a selection transistor SEL, an amplification transistor AMP, and a reset transistor RST are provided for each pixel 110. The pixel circuit 130 reads out the pixel signal transmitted from the photodiode PD of each pixel 110 via the transfer transistor TR, or resets the photodiode PD.

[0139] The floating diffusion portion FD is formed of an n-type semiconductor region provided in a p-well. The floating diffusion portion FD is provided for each pixel 110.

[0140] The transfer transistor TR is provided for each pixel 110 on the front surface 100S2 side (the side opposite to the light incident surface side; the side of the second substrate 200) of the light receiving layer 100S. The transfer transistor TR includes a transfer gate. The transfer gate includes, for example, a horizontal portion facing the front surface 100S2 of the light receiving layer 100S and a vertical portion provided in the light receiving layer 100S. The vertical portion extends in the thickness direction of the light receiving layer 100S. One end of the vertical portion is in contact with the horizontal portion, and the other end is provided in the n-type semiconductor region in which the photodiode PD is disposed. The transfer transistor TR formed of such a vertical transistor is less likely to cause poor transmission of the pixel signal, thereby improving the readout efficiency of the pixel signal.

[0141] A VSS contact region or the like is also provided near the front surface 100S2 of the light receiving layer 100S. The VSS contact region is a region electrically connected to the reference potential line VSS and is provided at a distance from the floating diffusion portion FD. For example, the VSS contact region is provided for each pixel 110. The VSS contact region is formed of, for example, a p-type semiconductor region. The VSS contact region is connected to, for example, a ground potential or a fixed potential. Therefore, the reference potential is supplied to the light receiving layer 100S.

[0142] For example, a pinning region is provided near the back surface 100S1 of the light receiving layer 100S. The pinning region is also formed, for example, from near the back surface 100S1 of the light receiving layer 100S to the side surface of the separation portion 112, specifically, between the separation portion 112 and the p-well. The pinning region is formed of, for example, a p-type semiconductor region.

[0143] On the back surface 100S1 of the light-receiving layer 100S, there are also provided, for example, a fixed-charge film having negative fixed charges and an insulating film. Due to the electric field induced by the fixed-charge film, a pinning region is formed at the interface on the light-receiving surface (back surface 100S1) side of the light-receiving layer 100S. This suppresses the generation of dark current caused by the interface state on the light-receiving surface side of the light-receiving layer 100S. The fixed-charge film is formed of, for example, an insulating film having negative fixed charges. Examples of materials for the insulating film having negative fixed charges include hafnium oxide, zirconium oxide, aluminum oxide, titanium oxide, or tantalum oxide.

[0144] A light-shielding film is provided between the fixed-charge film and the insulating film. The light-shielding film may be continuously provided with the light-shielding film 113 constituting the separation portion 112. The light-shielding film between the fixed-charge film and the insulating film is selectively provided, for example, at a position facing the separation portion 112 within the light-receiving layer 100S. That is, the light-shielding film is provided in a lattice pattern on the pixel array portion 100A. The insulating film is provided to cover the light-shielding film. The insulating film is formed using, for example, silicon oxide.

[0145] Optical members such as a color filter 131 or an on-chip lens 132 are provided on the back surface (light-incident side S1) side of the first substrate 100.

[0146] The color filter 131 selectively transmits light of a predetermined wavelength. The color filter 131 includes, for example, a plurality of color filters 131R, 131G, and 131B that selectively transmit red light (R), green light (G), or blue light (B) among visible light, and is provided for each pixel 110. As Figure 7 shown, the color filter 131 is configured such that, for example, for four pixels 110 arranged in 2 rows × 2 columns, two color filters 131G that selectively transmit green light (G) are arranged diagonally, and one color filter 131R that selectively transmits red light (R) and one color filter 131B that selectively transmits blue light (B) are arranged on the diagonal orthogonal to the above diagonal. In the pixels 110 where the respective color filters 131R, 131G, and 131B are provided, light of the corresponding color is photoelectrically converted in the photodiode PD. That is, in the pixel array portion 100A, the respective pixels 110 for detecting red light (R), green light (G), and blue light (B) are arranged in a Bayer arrangement. Considering the color reproducibility of the spectrum and the sensor sensitivity, the film thickness of the color filter 131 may be different for each color.

[0147] For example, an on-chip lens 132 is provided for each pixel 110. An on-chip lens 132 is provided for each pixel 110. Examples of the material of the on-chip lens 132 include resin materials having a refractive index of 1.5 or more and 2.0 or less, and inorganic materials such as silicon nitride (SiN), silicon oxynitride (SiON), silicon oxide (SiO), and amorphous silicon. In addition, the on-chip lens 132 may use a high refractive index organic material, such as a thiirane resin, a thianthrene compound, or a resin thereof. The shape of the on-chip lens 132 is not particularly limited, and various lens shapes such as a hemispherical shape and a semi-cylindrical shape may be adopted.

[0148] For example, a protective film having an antireflection function may be formed on the front surface of the on-chip lens 132. For example, with respect to the wavelength λ to be detected and the refractive index n of the protective film, the film thickness of the protective film is λ / 4n.

[0149] The wiring layer 100T includes an interlayer insulating layer 121 and a plurality of wirings (for example, wiring layers M1 and M2). The interlayer insulating layer 121 covers the entire front surface 100S2 of the light receiving layer 100S. The interlayer insulating layer 121 covers the respective gate electrodes of the transfer transistor TR, the selection transistor SEL, the amplification transistor AMP, and the reset transistor RST. The wiring layers M1 and M2 are provided in the interlayer insulating film 121 in this order. The plurality of wirings (wiring layers M1, M2) are separated by the interlayer insulating layer 121. The interlayer insulating layer 121 is made of, for example, silicon oxide (SiO).

[0150] In the wiring layer 100T, for example, the wiring layer M1, the wiring layer M2, and a plurality of contact portions 101 are provided in this order from the light receiving layer 100S side, and are insulated from each other by the interlayer insulating layer 121. The interlayer insulating layer 121 is provided with a plurality of connection vias that connect the plurality of wirings (for example, wiring layers M1 and M2) to these lower-layer wirings. The connection vias are formed by burying a conductive material in the connection holes provided in the interlayer insulating layer 121.

[0151] In the wiring layer 100T, a plurality of wirings (e.g., wiring layers M1 and M2) provided in the interlayer insulating layer 121 connect, for example, the floating diffusion portion FD to the gate of the amplifying transistor AMP and the source of the reset transistor RST. The plurality of wirings (e.g., wiring layers M1 and M2) include, for example, a plurality of row driving signal lines 512 extending in the row direction. The plurality of row driving signal lines 512 are used to send driving signals to the transfer transistor TR, the selection transistor SEL, and the reset transistor RST, and are connected to their respective gates via connection vias. The plurality of wirings (e.g., wiring layers M1 and M2) include, for example, a power supply line VDD, a reference potential line VSS, and a plurality of vertical signal lines 513 extending in the column direction. The power supply line VDD is connected to the drain of the amplifying transistor AMP and the drain of the reset transistor RST via connection vias. The reference potential line VSS is connected to the VSS contact area via a connection via. The vertical signal lines 513 are connected to the source (Vout) of the selection transistor SEL via connection vias.

[0152] For example, a plurality of contact portions 101 are provided at the intersections of three pixels 110 arranged in a 2-row × 2-column configuration in a plan view. The plurality of contact portions 101 are exposed on the front surface of the first substrate 100 (the surface of the wiring layer 100T facing the second substrate 200). The plurality of contact portions 101 are formed of, for example, Cu and are used to bond the first substrate 100 and the second substrate 200 to each other.

[0153] The second substrate 200 sequentially includes a wiring layer 200T-1, a light receiving layer 200S, and a wiring layer 200T-2 starting from the first substrate 100 side. In the light detection device 1, the second substrate 200 is bonded to the first substrate 100 so that the back side (light receiving layer 200S side) of the second substrate 100 faces the front side (wiring layer 100T side) of the first substrate 100. That is, the second substrate 200 is bonded to the first substrate 100 in a face-to-face manner. The light receiving layer 200S is composed of, for example, a silicon (Si) substrate. In the light receiving layer 200S, light receiving elements are provided for each pixel 210.

[0154] Figure 6 An example of the cross-sectional structure of the light receiving element provided for each pixel 210 is schematically shown. Note that in the figure, the symbols "p" and "n" represent a p-type semiconductor region and an n-type semiconductor region, respectively. In addition, the "+" or "-" at the end of "p" represents the impurity concentration of the p-type semiconductor region. Similarly, the "+" or "-" at the end of "n" represents the impurity concentration of the n-type semiconductor region. Here, the more the number of "+", the higher the impurity concentration, and the more the number of "-", the lower the impurity concentration.

[0155] The light-receiving layer 200S includes a pair of opposite surfaces (a back surface 200S1 and a front surface 200S2). The light-receiving layer 200S includes a p-well (p) shared by a plurality of pixels 210. The light-receiving layer 200S is provided with, for example, an n-type semiconductor region (n) in which the impurity concentration is controlled to be n-type, and which constitutes a light-receiving portion 211 for each pixel 210. The light-receiving layer 200S is also provided with a p-type semiconductor region (p + ) 214X and an n-type semiconductor region (n + ) 214Y that constitute a multiplication portion 214 on the back surface 200S1 side. As a result, a light-receiving element is formed for each pixel 210. A separation portion 212 is provided around the pixel 210 to electrically separate adjacent pixels 210 from each other. A p-type semiconductor region (p) 213 having an impurity concentration higher than that of the p-well is provided between the light-receiving element and the separation portion 212.

[0156] The light-receiving element has a multiplication region (avalanche multiplication region X) that performs avalanche multiplication on charge carriers through a high electric field region. As described above, the light-receiving element is a SPAD element that can form an avalanche multiplication region X by applying a large negative voltage to the cathode, and can perform avalanche multiplication on electrons generated by the incidence of one photon.

[0157] The light-receiving element is, for example, a SPAD element, and includes a light-receiving portion 211 and a multiplication portion 214. The light-receiving portion 211 and the multiplication portion 214 are buried and formed in, for example, the light-receiving layer 200S.

[0158] The light-receiving portion 211 corresponds to a specific example of the “second light-receiving portion” according to the present disclosure, and has a photoelectric conversion function of absorbing light incident from the front surface 200S2 side of the light-receiving layer 200S and generating charge carriers corresponding to the amount of received light. As described above, the light-receiving portion 211 includes an n-type semiconductor region (n) in which the impurity concentration is controlled to be n-type, and the charge carriers (electrons) generated by the light-receiving portion 211 are transmitted to the multiplication portion 214 through a potential gradient.

[0159] The multiplication portion 214 performs avalanche multiplication on the charge carriers (electrons in this example) generated by the light-receiving portion 211. The multiplication portion 214 includes, for example, a p-type semiconductor region (p + ) 214X and an n-type semiconductor region (n) having an impurity concentration higher than that of the n-type semiconductor region (n) constituting the light-receiving portion 211 + ) 214Y. The p-type semiconductor region (p + ) 214X and the n-type semiconductor region (n + ) 214Y are provided on the front surface 200S2 side, and from the front surface 200S2 side in the order of the n-type semiconductor region (n +)214Y and p-type semiconductor region (p + ) are formed by sequentially stacking 214X. For example, the p-type semiconductor region (p + ) has an area in the XY plane direction of 214X larger than that of the n-type semiconductor region (n + ) in the XY plane direction of 214Y, and is provided on the entire surface of the pixel 210 separated by the separation portion 212. However, this is not restrictive. For example, the p-type semiconductor region (p + ) 214X can be formed inside the p-type semiconductor region (p) 213.

[0160] In the light receiving element, the avalanche multiplication region X is formed at the junction between the p-type semiconductor region (p + ) 214X and the n-type semiconductor region (n + ) 214Y. The avalanche multiplication region X is a high electric field region (depletion layer) formed at the interface between the p-type semiconductor region (p + ) 214X and the n-type semiconductor region (n + ) 214Y by applying a large negative voltage to the cathode. In the avalanche multiplication region X, electrons (e-) generated by one photon incident on the light receiving element are multiplied.

[0161] A contact layer 215 and a contact layer 216 are also provided on the front surface 200S2 of the light receiving layer 200S. The contact layer 215 includes a p-type semiconductor region (p ++ ) electrically connected to the n-type semiconductor region (n) constituting the light receiving portion 211, and the contact layer 216 includes an n-type semiconductor region (n + ) electrically connected to the n-type semiconductor region (n ++ ) 214Y constituting the multiplication portion 214. For example, the contact layer 215 is provided along the separation portion 212 to surround the light receiving portion 211, and is connected to the bias voltage application portion as the anode of the light receiving element. The contact layer 216 is connected to the source terminal of the quenching resistor 340 as the cathode.

[0162] The separation portion 212 electrically separates adjacent pixels 210 from each other, and is provided in a lattice pattern on the pixel array portion 200A in a plan view to divide each of the plurality of pixels 210. The separation portion 212 extends between the back surface 200S1 and the front surface 200S2 of the light receiving layer 200S, and is formed by a trench having, for example, an FFTI structure penetrating the light receiving layer 200S. The separation portion 212 can be provided from the back surface 200S1 side of the light receiving layer 200S, or can be formed from the front surface 200S2 side.

[0163] The separation part 212 includes, for example, a light-shielding film 212A and an insulating film 212B. The light-shielding film 212A is buried in the trench and is formed of a light-shielding metal material such as tungsten (W), aluminum (Al), copper (Cu), cobalt (Co), nickel (Ni), or titanium (Ti), or a silicon compound thereof. In addition, the light-shielding film 212A can be formed of polysilicon (Poly-Si). The insulating film 212B is disposed between the light-receiving layer 200S and the light-shielding film 212A to coat the side and bottom surfaces of the trench. The insulating film 212B is formed of, for example, silicon oxide (SiO).

[0164] The side and bottom surfaces of the separation part 212 and the back surface 200S1 of the light-receiving layer 200S may be provided with, for example, a layer having a fixed charge (fixed charge film 217). The fixed charge film 217 can be a film having a positive fixed charge or a film having a negative fixed charge.

[0165] As a material for forming the fixed charge film 217, it is preferable to use a semiconductor material or a conductive material having a bandgap wider than that of the light-receiving layer 200S. This makes it possible to suppress the generation of dark current at the interface of the light-receiving layer 200S. Examples of materials for forming the fixed charge film 217 include hafnium oxide (HfO x ), aluminum oxide (AlO x ), zirconium oxide (ZrO x ), tantalum oxide (TaO x ), titanium oxide (TiO x ), lanthanum oxide (LaO x ), praseodymium oxide (PrO x ), cerium oxide (CeO x ), neodymium oxide (NdO x ), promethium oxide (PmO x ), samarium oxide (SmO x ), europium oxide (EuO x ), gadolinium oxide (GdO x ), terbium oxide (TbO x ), dysprosium oxide (DyO x ), holmium oxide (HoO x ), thulium oxide (TmO x ), ytterbium oxide (YbO x ), lutetium oxide (LuO x ), yttrium oxide (YO x ), hafnium nitride (HfN x ), aluminum nitride (AlN x ), hafnium oxynitride (HfO x N y ), and aluminum oxynitride (AlO x N y ).

[0166] In order to form the light-receiving layer 200S, in addition to the Si substrate, a semiconductor substrate containing germanium (Ge), selenium (Se), carbon (C), gallium arsenide (GaAs), gallium phosphide (GaP), nickel antimonide (NiSb), indium antimonide (InSb), indium arsenide (InAs), indium phosphide (InP), gallium nitride (GaN), silicon carbide (SiC), or indium gallium arsenide (InGaAs) can also be used.

[0167] The wiring layer 200T-1 is provided on the back surface 200S1 side of the light-receiving layer 200S. The wiring layer 200T-1 includes an interlayer insulating layer 221 and a plurality of contact portions 201. The interlayer insulating layer 221 covers the entire back surface 200S1 of the light-receiving layer 200S. The interlayer insulating layer 221 is made of, for example, silicon oxide (SiO). The plurality of contact portions 201 are provided at the four corner portions of pixels 210 having, for example, a rectangular shape in a plan view. The plurality of contact portions 201 are exposed on the front surface of the second substrate 200 (the surface of the wiring layer 200T-1 facing the first substrate 100). The plurality of contact portions 201 are formed using, for example, Cu and are respectively in contact with the plurality of contact portions 101 of the first substrate 100. That is, the first substrate 100 and the second substrate 200 are joined to each other by so-called Cu-Cu bonding and are electrically connected to each other.

[0168] The wiring layer 200T-2 includes an interlayer insulating layer 231 and one or more wirings (for example, wiring layer M3). The interlayer insulating layer 231 covers the entire front surface 200S2 of the light-receiving layer 200S. The wiring layer M3 is provided within the interlayer insulating layer 231. The interlayer insulating layer 231 is made of, for example, silicon oxide (SiO).

[0169] In the wiring layer 200T-2, for example, the wiring layer M3 and the plurality of contact portions 203 are provided in this order from the light-receiving layer 200S side and are insulated from each other by the interlayer insulating layer 231. The interlayer insulating layer 231 is provided with one or more wirings (for example, wiring layer M3) and, for example, a plurality of connection vias to connect the contact layers 215 and 216 to each other. The connection vias are formed by burying a conductive material in the connection holes provided in the interlayer insulating layer 231.

[0170] In the wiring layer 200T-2, one or more wirings (for example, wiring layer M3) provided within the interlayer insulating layer 231 are used to supply the voltage to be applied to, for example, the light-receiving layer 200S or the light-receiving element and to read out the charge carriers generated in the light-receiving element as signal charges to the pixel circuit 330 of the pixel circuit portion 533. Some of the wirings of the wiring layer M3 are electrically connected to the contact layer 215 via the connection vias. In addition, some of the wirings of the wiring layer M3 are electrically connected to the contact layer 216 via the connection vias.

[0171] A plurality of contact portions 203 are exposed on the front surface of the second substrate 200 (the surface of the wiring layer 200T-2 facing the third substrate 300). The plurality of contact portions 203 are formed of, for example, Cu and are used to bond the second substrate 200 and the third substrate 300 to each other.

[0172] The second substrate 200 further includes through holes 202 that penetrate the second substrate 100. Specifically, the through holes 202 extend from the surface of the wiring layer 200T-1 facing the first substrate 100 toward the surface of the wiring layer 200T-2 facing the third substrate 300. On the surface of the wiring layer 200T-1 facing the first substrate 100, the through holes 202 are in contact with the contact portions 101 of the first substrate 100. The surface of the wiring layer 200T-2 facing the third substrate 300 is in contact with the contact portions 301 of the third substrate 30. That is, the first substrate 100 and the third substrate 300 are electrically connected to each other via the through holes 202. The through holes 202 are formed of a metal material such as copper (Cu), aluminum (Al), or gold (Au). Alternatively, the through holes 202 may be formed of polysilicon (Poly-Si).

[0173] The third substrate 300 includes, for example, a wiring layer 300T and a semiconductor layer 300S in this order from the second substrate 200 side. For example, the front surface 300S1 of the semiconductor layer 300S is disposed on the second substrate 200 side. The semiconductor layer 300S is constituted by, for example, a silicon (Si) substrate. For example, a logic circuit is provided at a portion on the front surface side of the semiconductor layer 300S. Specifically, for example, an input / output unit 531, a signal processing unit 532, a pixel circuit unit 533, a histogram generation unit 534, and a readout unit 535 are provided at a portion on the front surface side of the semiconductor layer 300S.

[0174] The wiring layer 300T provided between the semiconductor layer 300S and the second substrate 200 includes, for example, an interlayer insulating layer 311, a plurality of wirings (wiring layers M4, M5, M6, M7, and M8) separated by an interlayer insulating film, and a plurality of contact portions 301. The plurality of contact portions 301 are exposed on the front surface of the wiring layer 300T (the surface on the second substrate 200 side). The plurality of contact portions 301 are electrically connected to a circuit formed in the semiconductor layer 300S (for example, at least one of the input / output unit 531, the signal processing unit 532, the pixel circuit unit 533, the histogram generation unit 534, or the readout unit 535). The plurality of contact portions 301 are formed of, for example, Cu and are respectively in contact with the plurality of contact portions 203 of the second substrate 200. That is, the second substrate 200 and the third substrate 300 are bonded to each other by so-called Cu-Cu bonding and are electrically connected to each other.

[0175] In the light detection device 1, as Figure 1As shown, the pixel 110 for acquiring two-dimensional image information provided in the first substrate 100 and the pixel 210 for acquiring depth information or depth data provided in the second substrate 200 overlap in the stacking direction (Z-axis direction). For example, the pixel size of the pixel 110 is smaller than the pixel size of the pixel 210, and a plurality of pixels 110 and one pixel 210 overlap in the Z-axis direction. In other words, in the light detection device 1, a plurality of pixels 110 overlap on one pixel 210 in the Z-axis direction, and the signal light (light L) detected by the pixel 210 is incident on the light receiving portion 211 of the pixel 210 via the light receiving portion 111 of the pixel 110.

[0176] Furthermore, it is preferable that the pitch of the pixel 210 and the pitch of the plurality of pixels 110 overlapping on one pixel 210 are substantially the same as each other. In other words, when the plurality of pixels 110 overlapping on one pixel 210 are set as a unit pixel block, it is preferable that the pitch of the pixel 210 and the pitch of the unit pixel block are substantially the same as each other. Specifically, for example, as Figure 7 shown, when the unit pixel block overlapping on one pixel 210 includes n pixels 110 arranged in n rows × n columns, it is preferable that the pitch of the pixel 110 is a / n of the pitch a of the pixel 210. This enables the contact portions 101 and 201 that bond the first substrate 100 and the second substrate 200 to each other to be arranged between adjacent unit pixel blocks and between adjacent pixels 210, for example, as 2 shown, so as not to block the light L incident on the light receiving portion 322. Figure 7 shown, so as not to block the light L incident on the light receiving portion 322.

[0177] [Method of manufacturing a light detection device]

[0178] For example, the light detection device 1 can be manufactured as follows.

[0179] First, a wiring layer 200T-2 is formed on the front surface 200S2 of the light receiving layer 200S, and a wiring layer 300T is formed on the front surface 300S1 of the semiconductor layer 300S. Then, as Figure 8A shown, the wiring layer 200T-2 of the second substrate 200 and the wiring layer 300T of the third substrate 300 are arranged to face each other.

[0180] Next, as Figure 8B shown, a plurality of contact portions 203 exposed on the front surface of the wiring layer 200T-2 and a plurality of contact portions 301 exposed on the front surface of the wiring layer 300T are bonded to each other to allow hybrid bonding of the second substrate 200 and the third substrate 300.

[0181] Subsequently, as Figure 8CAs shown, after thinning the light-receiving layer 200S using, for example, the CMP (chemical mechanical polishing) method, a plurality of light-receiving elements and separation portions 212 are formed in the light-receiving layer 200S.

[0182] Next, as Figure 8D shown, a wiring layer 200T-1 including a plurality of contact portions 201 on the front surface is formed on the back surface 200S1 of the light-receiving layer 200S through the REOL process.

[0183] Subsequently, as Figure 8E shown, a through hole 202 reaching the contact portion 301 from the front surface of the wiring layer 200T-1 is formed by using, for example, photolithography, etching, sputtering, etc.

[0184] Next, as Figure 8F shown, the separately formed first substrate 100 and second substrate 200 are hybrid-bonded by bonding together a plurality of contact portions 101 exposed on the front surface of the wiring layer 100T and a plurality of contact portions 201 exposed on the front surface of the wiring layer 200T-1.

[0185] Subsequently, as Figure 8G shown, after thinning the light-receiving layer 100S using, for example, the CMP method, a plurality of photodiodes PD and separation portions 112 are formed in the light-receiving layer 100S. Thereafter, a color filter 131 and an on-chip lens 132 are sequentially formed on the back surface 100S1 of the light-receiving layer 100S. Thus, the Figure 1 shown light detection device 1 is completed.

[0186] Note that, for example, the through hole 202 can be formed as follows.

[0187] First, a wiring layer 200T-1 including a plurality of contact portions 201 on the front surface is formed on the back surface 200S1 of the light-receiving layer 200S, and then, as Figure 9A shown, an opening H1 penetrating the interlayer insulating layer 221 is formed by, for example, photolithography and etching.

[0188] Next, as Figure 9B shown, an opening H2 penetrating the light-receiving layer 200S and the interlayer insulating layer 231 is formed in the opening H1 by, for example, photolithography and etching.

[0189] Thereafter, as Figure 9C shown, the through hole 202 is formed by filling the openings H1 and H2 with a conductive material by, for example, sputtering, etc. As described above, by forming the opening reaching the contact portion 301 from the front surface of the wiring layer 200T-1 in two or more stages, the processing controllability of each layer having different etching rates is improved.

[0190] [Operation of the light detection device]

[0191] Figure 10 is a timing chart showing an operation example of the optical detection device 1. In the optical detection device 1, a first substrate 100, a second substrate 200, and a third substrate 300 are stacked in order. In the first substrate 100, a plurality of pixels 110 for acquiring two-dimensional image information are arranged in an array. In the second substrate 2, a plurality of pixels 210 for acquiring depth information are arranged in an array so as to overlap the plurality of pixels 110. The third substrate includes a logic circuit for processing pixel signals output from the plurality of pixels 110 and the plurality of pixels 210. In the optical detection device 1, as Figure 10 shown, at the timing of reading out the first substrate, the second substrate 200 can be irradiated with light L (ranging signal light) for acquiring depth information, so that the exposure period of the first substrate 100 and the exposure period of the second substrate 100 can be separated from each other. This makes it possible to suppress color mixing.

[0192] [Function and effect]

[0193] In the optical detection device 1 of the present embodiment, a first substrate 100, a second substrate 200, and a third substrate 300 are stacked in order. In the first substrate 100, a plurality of pixels 110 for acquiring two-dimensional image information are arranged in an array. In the second substrate 200, a second light receiving layer including a plurality of pixels 210 for acquiring depth information is arranged in an array so as to overlap the plurality of pixels 110. The third substrate includes a logic circuit for processing pixel signals output from the plurality of pixels 110 and the plurality of pixels 210. This will be described in detail below.

[0194] In recent years, sensors capable of acquiring both two-dimensional images and depth images have been developed. In such sensors, for example, a structure in which a sensor for acquiring a two-dimensional image and a sensor for acquiring a depth image are arranged side by side or stacked can be considered.

[0195] However, in the case where a sensor for acquiring a two-dimensional image and a sensor for acquiring a depth image are arranged side by side, a mismatch occurs between the pixels for acquiring two-dimensional image information and the corresponding ranging points. In addition, the increase in the module area increases the cost. For these reasons, it is desirable to stack a sensor for acquiring a two-dimensional image and a sensor for acquiring a depth image.

[0196] As a structure in which a sensor for acquiring a two-dimensional image and a sensor for acquiring a depth image are stacked, a stacked structure in which a sensor for acquiring two-dimensional image information and a sensor for acquiring depth information are stacked in order from the light incident side, and a stacked structure in which a sensor for acquiring depth information and a sensor for acquiring two-dimensional image information are stacked in order from the light incident side can be considered. However, in a sensor for acquiring depth information, each pixel needs to be connected to a time-to-digital converter (TDC) on the logic side. Therefore, when the sensor for acquiring two-dimensional image information is placed below the sensor for acquiring depth information, the wiring of the sensor for acquiring depth information cannot be laid out. For these reasons, in a structure in which a sensor for acquiring a two-dimensional image and a sensor for acquiring a depth image are stacked, it is desirable to stack a sensor for acquiring two-dimensional image information and a sensor for acquiring depth information in order from the light incident side.

[0197] As such a sensor, as described above, a device for acquiring a two-dimensional image and a depth image has been reported, in which a transmission window is provided between two-dimensional image pixels adjacent to each other, and depth pixels are arranged at positions facing the transmission window. However, in such an acquisition device, the optical axes of the sensor for acquiring a two-dimensional image and the sensor for acquiring a depth image deviate from each other, or the logic circuits are separate chips and the driving is not adjusted in a timely manner, so it is impossible to obtain a device in which both the time component and the spatial component are consistent.

[0198] In contrast, in the present embodiment, a first substrate 100 including a light receiving layer 100S and a second substrate 200 including a light receiving layer 200S are stacked. A plurality of pixels 110 for acquiring two-dimensional image information are arranged in an array in the light receiving layer 100S, a plurality of pixels 210 for acquiring depth information are arranged in an array in the light receiving layer 200S, and the pixels 110 and the pixels 210 are arranged to overlap each other. In addition, a third substrate 300 including a logic circuit that processes pixel signals output from the plurality of pixels 110 and the plurality of pixels 210 is stacked on the second substrate 200 side. This makes it possible to align the optical axes and acquire two-dimensional image information and depth information. In addition, the driving of the pixels 110 and the pixels 210 can be synchronized.

[0199] As described above, in the light detection device 1 of the present embodiment, it is possible to make the time component and the spatial component of the pixels 110 for acquiring two-dimensional image information and the pixels 210 for acquiring depth information consistent. Therefore, color mixing can be suppressed.

[0200] Next, modification examples 1 to 12, application examples, and application examples of the above embodiment will be described. Hereinafter, constituent elements similar to those in the above embodiment are denoted by the same reference numerals, and their description will be appropriately omitted.

[0201] <2. Modified Example 1>

[0202] Figure 11 An example of the layout of the color filter 131 according to Modified Example 1 of the present disclosure is schematically shown.

[0203] In the above-described embodiment, examples of a plurality of color filters 131R, 131G, and 131B that selectively transmit red light (R), green light (G), or blue light (B) for four pixels 110 configured in 2 rows × 2 columns are shown. In this example, two color filters 131G are arranged on the diagonal line, and one color filter 131R and one color filter 131B are arranged on the diagonal line orthogonal to the above diagonal line. In contrast, for example, the color filters 131 may be configured such that the color filters 131R, 131G, or 131B of the same color correspond to a pixel block including a plurality of pixels 110.

[0204] Specifically, as Figure 11 shown, for example, a pixel block including four pixels 110 configured in 2 rows × 2 columns may be used as a repeating unit; in the pixel array unit 100A in which pixel blocks are arranged in an array in the row direction and the column direction, the color filters 131R, 131G, and 131B may be arranged in a Bayer arrangement in units of pixel blocks.

[0205] In addition, the color filter 131 may include a color filter 131Y that selectively transmits yellow light (Y) as a complementary color instead of the color filter 131G that selectively transmits green light (G). In the color filter 131 including the color filters 131R, 131B, and 131Y, as Figure 12 shown, for example, in the Bayer arrangement for four pixels 110 configured in 2 rows × 2 columns, two color filters 131Y are arranged on the diagonal line, and one color filter 131R and one color filter 131B are arranged on the diagonal line orthogonal to the above diagonal line.

[0206] In the same manner as the layout Figure 11 shown, in the color filter 131 including the color filters 131R, 131B, and 131Y, as Figure 13 shown, for example, a pixel block including four pixels 110 configured in 2 rows × 2 columns may be used as a repeating unit; in the pixel array unit 100A in which pixel blocks are arranged in an array in the row direction and the column direction, the color filters 131R, 131B, and 131Y may be arranged in a Bayer arrangement in units of pixel blocks.

[0207] In addition, Figure 11 and Figure 13An example is shown in which a pixel block provided with color filters 131R, 131G (or 131Y), and 131B includes the same number of pixels 110; however, this is not restrictive. For example, a pixel unit configured with color filter 131R or 131B may include eight pixels 110, and a pixel unit configured with color filter 131G (or 131Y) may include ten pixels 110.

[0208] In addition, color filter 131 may include color filters that selectively transmit cyan, magenta, and yellow, respectively.

[0209] <3. Modification Example 2>

[0210] Figure 14 An example of the cross-sectional configuration of a light detection device (light detection device 2) according to Modification Example 2 of the present disclosure is schematically shown.

[0211] In the above-described embodiment, an example is shown in which a through hole 202 for electrically connecting the first substrate 100 and the third substrate 300 to each other is provided outside the pixel array portion 100A in which a plurality of pixels 110 are arranged in an array.

[0212] In contrast, in the light detection device 2 of this modification example, the through hole 202 is provided inside the pixel array portion 100A. In other words, as Figure 14 shown, the through hole 202 is provided below a plurality of pixels 110 arranged in an array.

[0213] As described above, in this modification example, the through hole 202 is provided below a plurality of pixels 110 arranged in an array, so that the area in which the through hole 202 is arranged can be reduced. That is, the chip area of the first substrate 100 can be reduced. Therefore, in addition to the effects of the above-described embodiment, a reduction in the size of the light detection device can be achieved.

[0214] <4. Modification Example 3>

[0215] Figure 15 An example of the cross-sectional configuration of a light detection device (light detection device 3) according to Modification Example 3 of the present disclosure is schematically shown.

[0216] In the above-described embodiment, an example is shown in which the first substrate 100 and the second substrate 200 are electrically connected using hybrid bonding, and through this hybrid bonding, a plurality of contact portions 101 provided on the front surface of the wiring layer 100T and a plurality of contact portions 201 provided on the front surface of the wiring layer 200T-1 facing each other are bonded together.

[0217] In contrast, in the optical detection device 3 of this modification example, for example, a through hole 204 is provided that penetrates the light receiving layer 100S, the wiring layer 100T and 200T-1, the light receiving layer 200S, and the wiring layer 200T-2 from the back surface 100S1 of the light receiving layer 100S toward the third substrate 300, thereby allowing the first substrate 100 and the second substrate to be electrically connected to each other and the first substrate and the third substrate 300 to be electrically connected to each other.

[0218] For example, the optical detection device 3 can be manufactured as follows.

[0219] First, in the same manner as in the above-described embodiment, a plurality of contact portions 203 exposed on the front surface of the wiring layer 200T-2 and a plurality of contact portions 301 exposed on the front surface of the wiring layer 300T are bonded to each other, and the second substrate 200 and the third substrate 300 are hybrid-bonded. Thereafter, the light receiving layer 200S is thinned to form a plurality of light receiving elements and the separation portion 212.

[0220] Next, as Figure 16A shown, in the same manner as in the above-described embodiment, the wiring layer 200T-1 is formed on the back surface 200S1 of the light receiving layer 200S by the REOL process.

[0221] Subsequently, as Figure 16B shown, the separately formed first substrate 100 and the second substrate 200 are bonded to each other so that the respective wiring layers 100T and 200T-1 face each other.

[0222] Next, the light receiving layer 100S is thinned using, for example, the CMP method, and then, as Figure 16C shown, the through hole 204 reaching the contact portion 301 is formed from the back surface 200S1 of the light receiving layer 200S by, for example, photolithography, etching, sputtering, etc. Thereafter, a plurality of photodiodes PD and the separation portion 112 are formed in the light receiving layer 100S, and then the color filter 131 and the on-chip lens 132 are sequentially formed on the back surface 100S1 of the light receiving layer 100S. Thus, the Figure 15 shown optical detection device 3 is completed.

[0223] As described above, in this modification example, the through hole 204 reaching the third substrate 300 is provided from the back surface 100S1 of the light receiving layer 100S; the first substrate 100 and the second substrate 200 are electrically connected to each other and the first substrate 100 and the third substrate 300 are electrically connected to each other. Compared with the optical detection device 1 of the above-described embodiment that performs two hybrid bonds, this makes it possible to simplify the manufacturing steps.

[0224] <5. Modification Example 4>

[0225] Figure 17Shows an example of the schematic configuration of a light detection device (light detection device 4A) according to Modification Example 4 of the present disclosure. Figure 18 Shows another example of the schematic configuration of a light detection device (light detection device 4B) according to Modification Example 4 of the present disclosure.

[0226] In the above-described embodiment, an example is shown in which the first substrate 100 is provided with a plurality of pixels 110 for acquiring two-dimensional image information, the second substrate 200 is provided with a plurality of pixels 210 for acquiring depth information, and the third substrate 300 is provided with a logic circuit for processing pixel signals output from the plurality of pixels 110 and the plurality of pixels 210.

[0227] In contrast, in the light detection device 4A of this modification example, as Figure 17 shown, for example, the signal processing unit 532A is provided outside the pixel array unit 100A of the first substrate 100 as part of the logic circuit provided in the third substrate 300. In the light detection device 4B of this modification example, as Figure 18 shown, for example, the signal processing unit 532B is provided outside the pixel array unit 200A of the second substrate 200 as part of the logic circuit provided in the third substrate 300.

[0228] As described above, in this modification example, a part of the logic circuit provided in the third substrate 300 is provided in the first substrate 100 or the second substrate 200. This enables the third substrate 300 to mount functional elements such as memories and antennas and functional elements that perform machine learning such as pattern matching and neural networks. Therefore, a more complex light detection device can be provided.

[0229] <6. Modification Example 5>

[0230] Figure 19 Schematically shows an example of the cross-sectional configuration of a light detection device (light detection device 5A) according to Modification Example 5 of the present disclosure. Figure 20 Schematically shows an example of the cross-sectional configuration of a light detection device (light detection device 5B) according to Modification Example 5 of the present disclosure.

[0231] In the above-described embodiment, an example is shown in which the color filter 131 and the on-chip lens 132 are provided as optical members on the back side (light incident side S1) of the first substrate 100.

[0232] In contrast, in the optical detection device 5A of this modification example, a meta-lens 133 formed by patterning a three-dimensional structure is provided instead of the on-chip lens 132. Further, in the optical detection device 5B of this modification example, a color router 134 that demultiplexes a predetermined wavelength is provided in each pixel 110 instead of the color filter 131.

[0233] As described above, in this modification example, the color router 134 and the meta-lens 133 are provided as optical members on the back surface (light incident side S1) side of the first substrate 100. Therefore, effects similar to those of the above-described embodiment can be obtained.

[0234] <7. Modification Example 6>

[0235] Figure 21 An example of a cross-sectional configuration of an optical detection device (optical detection device 6) according to Modification Example 6 of the present disclosure is schematically shown.

[0236] In the above-described embodiment, an example in which the first substrate 100 and the third substrate 300 are electrically connected via the through-hole 202 that penetrates from the front surface of the wiring layer 200T-1 provided on the back surface 200S1 side of the light receiving layer 200S toward the front surface of the wiring layer 200T-2 provided on the front surface 200S2 side of the light receiving layer 200S is shown.

[0237] In contrast, in the optical detection device 6 of this modification example, the first substrate 100 and the third substrate 300 are electrically connected via a through-hole 205 that penetrates from the front surface of the wiring layer 200T-2 provided on the front surface 200S2 side of the light receiving layer 200S toward the front surface of the wiring layer 200T-1 provided on the back surface 200S1 side of the light receiving layer 200S.

[0238] For example, the optical detection device 6 can be manufactured as follows.

[0239] First, the wiring layer 200T-2 is provided on the front surface 200S2 side of the light receiving layer 200S, and then, as Figure 22A shown, a through-hole 205A is formed by using, for example, photolithography, etching, sputtering, etc. so as to extend from the front surface of the wiring layer 200T-2 toward the back surface 200S1 of the light receiving layer 200S.

[0240] Next, as Figure 22B shown, the separately formed second substrate 200 and third substrate 300 are bonded to each other so that the respective wiring layers 200T-2 and 300T face each other.

[0241] Subsequently, the light receiving layer 200S is thinned using, for example, the CMP method. Then, as shown in 22C, the through hole 205A is exposed on the back surface 200S1 of the light receiving layer 200S, and the contact portion 206 is formed.

[0242] Next, as Figure 22D shown, a plurality of light receiving elements and the separation portion 212 are formed in the light receiving layer 200S.

[0243] Subsequently, as Figure 22E shown, after the wiring layer 200T-1 is formed on the back surface 200S1 of the light receiving layer 200S through the REOL process, the through hole 205B that penetrates the wiring layer 200T-1 and contacts the contact portion 206 is formed, for example, by using photolithography, etching, sputtering, etc.

[0244] Next, as Figure 22F shown, the separately formed first substrate 100 and the second substrate 200 are hybrid-bonded by bonding together the plurality of contact portions 101 exposed on the front surface of the wiring layer 100T and the plurality of contact portions 201 exposed on the front surface of the wiring layer 200T-1. Thereafter, a plurality of photodiodes PD and the separation portion 112 are formed in the light receiving layer 100S, and then the color filter 131 and the on-chip lens 132 are sequentially formed on the back surface 100S1 of the light receiving layer 100S. Thus, the Figure 21 shown optical detection device 6 is completed.

[0245] As described above, in this modification, the through hole 204 reaching the third substrate 300 from the back surface 100S1 of the light receiving layer 100S is provided; the first substrate 100 and the second substrate 200 are electrically connected to each other and the first substrate 100 and the third substrate 300 are electrically connected to each other. Compared with the optical detection device 1 of the above-described embodiment that performs two hybrid bonds, this makes it possible to simplify the manufacturing steps.

[0246] As described above, in this modification, the first substrate 100 and the third substrate 300 are electrically connected to each other via the through hole 205 that penetrates the second substrate 200 from the third substrate 300 side toward the first substrate 100. This makes it possible to obtain an effect similar to that of the above-described embodiment.

[0247] <8. Modification 7>

[0248] Figure 23 An example of the cross-sectional configuration of an optical detection device (optical detection device 7A) according to Modification 7 of the present disclosure is schematically shown. Figure 24 Schematically shown is Figure 23 an example of the wiring layout in the wiring layer 100T of the optical detection device 7A shown.

[0249] In the optical detection device 7A of this modification example, a waveguide 121X in which wiring layers M1 and M2 are not formed is formed above a plurality of pixels 210 arranged in an array in the second substrate 200 within the wiring layer 100T.

[0250] This enables reduction of absorption by the wiring layers M1 and M2 in the optical detection device 7A of this modification example and guides the signal light (light L) detected in the plurality of pixels 210 to the light receiving portion 211. Therefore, compared with the optical detection device 1 of the above-described embodiment, the sensitivity in the second substrate 200 can be improved.

[0251] Note that, as in the optical detection device 7B shown Figure 25 the waveguide 121X may be filled with a material 122 different from, for example, the surrounding interlayer insulating layer 121. Examples of such a material 122 include a resin material having translucency and an organic material that does not absorb wavelengths in the near-infrared region. Alternatively, a portion of the material 122 may be a void. This enables further reduction of absorption of the signal light (light L) in the waveguide 121X and further improvement of the sensitivity in the second substrate 200.

[0252] Furthermore, as in the optical detection device 7C shown Figure 26 an internal lens 123 may be provided in the waveguide 12X. This enables the signal light (light L) to be effectively converged on the light receiving portion 211 of the pixel 210, thereby further improving the sensitivity in the second substrate 200.

[0253] <9. Modification Example 8>

[0254] Figure 27 An example of a cross-sectional configuration of an optical detection device (optical detection device 8) according to Modification Example 8 of the present disclosure is schematically shown.

[0255] In the above-described embodiment, a wiring layer 100T including a plurality of wirings (for example, wiring layers M1 and M2) is provided on the front surface 100S2 side of the light receiving layer 100S.

[0256] In contrast, in the optical detection device 8 of this modification example, a wiring layer 100T-1 including a plurality of wirings (for example, wiring layers M1 and M2) is provided on the back surface 100S1 side of the light receiving layer 100S, and a wiring layer 100T-2 serving as a bonding layer with the second substrate 200 is provided on the front surface 100S2 side of the light receiving layer 100S.

[0257] For example, the optical detection device 8 can be manufactured as follows.

[0258] First, as in Figure 28AAs shown, an insulating layer 124 serving as a wiring layer 100T-2 is provided on the front 100S2 side, and a wiring layer 100T-1 is formed on the back 100S1 side of the light receiving layer 100S through a BEOL process. The light receiving layer 100S includes a plurality of photodiodes PD and a separation portion 112 therein.

[0259] Next, as Figure 28B shown, a support substrate 600 is bonded to the wiring layer 100T-1.

[0260] Subsequently, as Figure 28C shown, for example, the insulating layer 124 is thinned by using a CMP method to adjust the wiring layer 100T-1 to have a predetermined thickness.

[0261] Next, as Figure 28D shown, a first substrate 100 and a second substrate to which a separately formed third substrate 300 is hybrid-bonded are provided such that the respective wiring layers 100T-2 and 200T-1 face each other.

[0262] Subsequently, as Figure 28E shown, after the first substrate 100 and the second substrate 200 are bonded to each other, as Figure 28F shown, the support substrate 600 is removed. Thereafter, for example, a through hole 204 reaching the contact portion 301 from the front of the wiring layer 100T-1 is formed by using photolithography, etching, sputtering, etc., and then a color filter 131 and an on-chip lens 132 are sequentially formed on the back 100S1 of the light receiving layer 100S. Thus, the Figure 27 shown optical detection device 8 is completed.

[0263] As described above, in the optical detection device 8 of this modification, a wiring layer 100T-1 including a plurality of wirings (for example, wiring layers M1 and M2) is provided on the back 100S1 side and the front 100S2 side of the light receiving layer 100S. Therefore, compared with the optical detection device 1 of the above-described embodiment, the light receiving portions 111 of the first substrate 100 and the light receiving portions 211 of the second substrate 200 are closer to each other in the stacking direction (Y-axis direction), so that the on-chip lens 132 can be focused at a position closer to the light receiving portion 111 or the light receiving portion 211. Therefore, an optical detection device with high sensitivity can be provided.

[0264] <10. Modification 9>

[0265] Figure 29 An example of the cross-sectional configuration of an optical detection device (optical detection device 9) according to Modification 9 of the present disclosure is schematically shown.

[0266] In the light detection device 9 of this modification example, a band-pass filter 241 is provided between the first substrate 100 that detects wavelengths in the visible light region to obtain two-dimensional image information and the second substrate 200 that detects wavelengths in the near-infrared region to obtain depth information. The band-pass filter selectively transmits a predetermined wavelength band including wavelengths in the near-infrared region.

[0267] The band-pass filter 241 includes, for example, a multilayer film in which materials with different refractive indices are combined, such as silicon oxide (SiO) and amorphous silicon (α-Si), silicon oxide and polycrystalline silicon (Poly-Si), and silicon oxide and silicon nitride (SiN).

[0268] This enables the light detection device 9 of this modification example to suppress wavelengths other than the signal light for distance measurement in the second substrate 200. Therefore, compared with the light detection device 1 of the above-described embodiment, a more accurate depth image can be obtained.

[0269] <11. Modification Example 10>

[0270] Figure 30 An example of the cross-sectional configuration of a light detection device (light detection device 10) according to Modification Example 10 of the present disclosure is schematically shown.

[0271] In the light detection device 10 of this modification example, for example, in the wiring layer 200T-1 on the back surface 200S1 side of the light receiving layer 200S, an internal lens 242 is provided for each pixel 210.

[0272] This enables the light detection device 10 of this modification example to effectively converge the signal light (light L) on the light receiving portion 211 of the pixel 210. Therefore, compared with the light detection device 1 of the above-described embodiment, the sensitivity in the second substrate 200 can be improved.

[0273] <12. Modification Example 11>

[0274] Figure 31 An example of the cross-sectional configuration of a light detection device (light detection device 11A) according to Modification Example 11 of the present disclosure is schematically shown.

[0275] In the above-described embodiment, an example is shown in which a plurality of pixels 110 in the first substrate 100 are arranged in an array without gaps in the row direction and the column direction in the pixel array portion 100A.

[0276] In contrast, in the light detection device 11A of this modification example, a plurality of pixels 110 arranged in an array in the pixel array portion 100A are appropriately omitted, and an opening window 100H is provided above the plurality of pixels 210 arranged in an array on the second substrate 200.

[0277] This enables an increase in the signal light (light L) incident on the second substrate 200 in the optical detection device 11A of this modification example, thereby improving the sensitivity in the second substrate 100.

[0278] In addition, as in Figure 32 the optical detection device 11B shown, the opening window 100H can be filled with a material different from the surrounding light receiving layer 100S (for example, the interlayer insulating layer 121). This enables a reduction in the absorption of the signal light (light L) by the light receiving layer 200S, thereby further improving the sensitivity in the second substrate 200.

[0279] In addition, as in Figure 33 the optical detection device 11C shown, an on-chip lens 135 can be provided on the back surface 100S1 of the light receiving layer 100S in which the opening window 100H is formed. The on-chip lens has a shape different from that of the surrounding on-chip lenses 132 and is adjusted to be focused on the light receiving portion 211. This enables a further increase in the signal light (light L) incident on the second substrate 200, thereby further improving the sensitivity in the second substrate 100.

[0280] In addition, as in Figure 34 the optical detection device 11D shown, the pixel 210 provided with the opening window 100H above can be provided with an internal lens 242 in the wiring layer 200T-1 on the back surface 200S1 side of the light receiving layer 200S. This enables a further increase in the signal light (light L) incident on the second substrate 200, thereby further improving the sensitivity in the second substrate 2.

[0281] <13. Modification Example 12>

[0282] Figure 35 is a perspective view showing an example of the positional relationship between the pixel for two-dimensional image information acquisition and the pixel for depth information acquisition according to Modification Example 12 of the present disclosure.

[0283] In the above-described embodiment, an example in which the plurality of pixels 110 constituting the pixel array portion 100A in the first substrate 100 have a uniform size is shown; however, this is not restrictive. For example, as Figure 35 shown, the pixel array portion 100A can be provided with a plurality of pixels 110A and 110B having different sizes. As a result, the first substrate 100 for acquiring two-dimensional image information is provided with pixels (pixels 110A and 110B) having different saturation charge amounts (Ws), thereby enabling an expansion of the dynamic range.

[0284] <14. Application Example>

[0285] (Application Example 1)

[0286] For example, the above-described light detection device 1 and the like can be applied to any type of electronic device having an imaging function, and examples thereof include camera systems such as digital cameras or video cameras, and mobile phones having an imaging function. Figure 36 A schematic configuration of the electronic device 1000 is shown.

[0287] The electronic device 1000 includes, for example, a lens unit 1001, a light detection device 1, a DSP (Digital Signal Processor) circuit 1002, a frame memory 1003, a display unit 1004, a recording unit 1005, an operation unit 1006, and a power supply unit 1007, and they are connected to each other via a bus 1008.

[0288] The lens unit 1001 captures incident light (image light) from a subject and forms an image on the imaging surface of the light detection device 1. The light detection device 1 converts the amount of incident light that has been imaged on the imaging surface by the lens unit 1001 into an electrical signal in units of pixels, and supplies it as a pixel signal to the DSP circuit 1002.

[0289] The DSP circuit 1002 is a signal processing circuit that processes the signal supplied from the light detection device 1. The DSP circuit 1002 outputs image data obtained by processing the signal supplied from the light detection device 1. The frame memory 1003 temporarily holds the image data processed by the DSP circuit 1002 in units of frames.

[0290] For example, the display unit 1004 includes a panel-type display device such as a liquid crystal panel or an organic electroluminescence (EL) panel, and records the image data of a moving image or a still image captured by the light detection device 1 on a recording medium such as a semiconductor memory or a hard disk.

[0291] The operation unit 1006 outputs operation signals for various functions possessed by the electronic device 1000 according to operations performed by the user. The power supply unit 1007 appropriately supplies various types of power used as the operation power of the DSP circuit 1002, the frame memory 1003, the display unit 1004, the recording unit 1005, and the operation unit 1006 to these supply targets.

[0292] (Application Example 2)

[0293] Figure 37A An example of the overall configuration of the light detection system 2000 including the light detection device 1 is schematically shown. Figure 37BAn example of the circuit configuration of the optical detection system 2000 is shown. The optical detection system 2000 includes a light emitting device 2001 as a light source unit that emits infrared light L2 and a light detection device 2002 as a light receiving unit having a photoelectric conversion element. The above-mentioned light detection device 1 can be used as the light detection device 2002. The optical detection system 2000 may further include a system control unit 2003, a light source drive unit 2004, a sensor control unit 2005, a light source side optical system 2006, and a camera side optical system 2007.

[0294] The light detection device 2002 is capable of detecting light L1 and light L2. Light L1 is reflected light ([ Figure 37A ) of ambient light from the outside reflected by the subject (measurement object) 2100. Light L2 is light emitted by the light emitting device 2001 and then reflected by the subject 2100. Light L1 is, for example, visible light, and light L2 is, for example, infrared light. Light L1 is detectable at the photoelectric conversion section in the light detection device 2002, and light L2 is detectable at the photoelectric conversion region in the light detection device 2002. Image information about the subject 2100 can be obtained from light L1, and information about the distance between the subject 2100 and the optical detection system 2000 can be obtained from light L2. For example, the optical detection system 2000 can be installed on an electronic device such as a smartphone or on a moving body such as a car. The light emitting device 2001 can be constituted by, for example, a semiconductor laser, a surface emitting semiconductor laser, or a vertical cavity surface emitting laser (VCSEL). The iTOF method can be used as a method for the light detection device 2002 to detect the light L2 emitted from the light emitting device 2001; however, this is not restrictive. In the iTOF method, the photoelectric conversion section can measure the distance to the subject 2100 by, for example, the time of flight (TOF) of light. As a method for the light detection device 2002 to detect the light L2 emitted from the light emitting device 2001, for example, a structured light method or a stereovision method can be adopted. For example, in the structured light method, light having a predetermined pattern is projected onto the subject 2100, and the distortion of the pattern is analyzed, so that the distance between the optical detection system 2000 and the subject 2100 can be measured. In addition, in the stereovision method, for example, two or more cameras are used to obtain two or more images of the subject 2100 viewed from two or more different viewpoints, so that the distance between the optical detection system 2000 and the subject can be measured. Note that the system control unit 2003 can synchronously control the light emitting device 2001 and the light detection device 2002.

[0295] <15. Application Example>

[0296] <Application Example of Endoscopic Surgery System>

[0297] The technology according to the present disclosure can be applied to various products. For example, the technology according to the present disclosure can be applied to an endoscopic surgery system.

[0298] Figure 38 FIG. is an example showing a schematic configuration of an endoscopic surgery system to which the technology according to the present disclosure (this technology) can be applied.

[0299] In Figure 38 it, a state is shown in which a surgeon (doctor) 11131 is performing surgery on a patient 11132 on a hospital bed 11133 using an endoscopic surgery system 11000. As shown in the figure, the endoscopic surgery system 11000 includes an endoscope 11100, other surgical instruments 11110 such as a pneumoperitoneum tube 11111 and an energy instrument 11112, a support arm device 11120 that supports the endoscope 11100 thereon, and a cart 11200 on which various devices for endoscopic surgery are mounted.

[0300] The endoscope 11100 includes a lens barrel 11101 having a region of a predetermined length from its distal end inserted into the body cavity of the patient 11132 and a camera 11102 connected to the proximal end of the lens barrel 11101. In the example shown in the drawing, an endoscope 11100 including a rigid endoscope having a rigid lens barrel 11101 is shown. However, the endoscope 11100 may also include a flexible endoscope having a flexible lens barrel 11101.

[0301] The lens barrel 11101 has an opening at its distal end where an objective lens is assembled. A light source device 11203 is connected to the endoscope 11100 such that light generated by the light source device 11203 is guided to the distal end of the lens barrel through an optical fiber extending inside the lens barrel 11101 and the light is irradiated toward an observation object in the body cavity of the patient 11132 via the objective lens. Note that the endoscope 11100 may be a direct-view endoscope, or may be an oblique-view endoscope or a side-view endoscope.

[0302] An optical system and a light detection device are provided inside the camera 11102 such that reflected light (observation light) from the observation object is focused on the light detection device through the optical system. The observation light is subjected to photoelectric conversion by the light detection device to generate an electrical signal corresponding to the observation light, that is, an image signal corresponding to the observation image. The image signal is transmitted as RAW data to a camera control unit (CCU) 11201.

[0303] The CCU 11201 includes a central processing unit (CPU), a graphics processing unit (GPU), etc., and comprehensively controls the operations of the endoscope 11100 and the display device 11202. In addition, for example, the CCU 11201 receives an image signal from the camera 11102, and performs various types of image processing such as imaging processing (demosaicing processing) to display an image based on the image signal.

[0304] The display device 11202 displays, under the control of the CCU 11201, an image based on the image signal that has been subjected to image processing by the CCU 11201 thereon.

[0305] For example, the light source device 11203 includes a light source such as a light-emitting diode (LED), etc., and supplies irradiation light for photographing the surgical area to the endoscope 11100.

[0306] The input device 11204 is an input interface for the endoscopic surgical system 11000. The user can input various types of information or instructions into the endoscopic surgical system 11000 via the input device 11204. For example, the user inputs instructions for changing the imaging conditions (type of irradiation light, magnification, focal length, etc.) of the endoscope 11100.

[0307] The treatment instrument control device 11205 controls the driving of the energy instrument 11112 for cauterizing or incising tissues, sealing blood vessels, etc. The pneumoperitoneum device 11206 injects gas into the body cavity of the patient 11132 via the pneumoperitoneum tube 11111 to expand the body cavity, so as to ensure the field of view of the endoscope 11100 and ensure the working space for the surgeon. The recorder 11207 is a device capable of recording various types of information related to the surgery. The printer 11208 is a device capable of printing various types of information related to the surgery in various forms such as text, image, graph, etc.

[0308] Note that, for example, the light source device 11203 that supplies irradiation light for photographing the surgical area to the endoscope 11100 may include an LED, a laser light source, or a white light source combined with them. In the case where the white light source includes a combination of red, green, and blue (RGB) laser light sources, since the output intensity and output timing of various colors (each wavelength) can be controlled with high precision, the white balance adjustment of the captured image can be performed by the light source device 11203. In addition, in this case, if the laser from each RGB laser light source is emitted to the observation object in a time-division manner and the driving of the light detection device of the camera 11102 is controlled in synchronization with the emission timing. Then, images corresponding to the RGB colors can be captured in a time-division manner. According to this method, even if a color filter is not provided for the light detection device, a color image can be obtained.

[0309] In addition, the light source device 11203 can be controlled such that the intensity of the light to be output is changed during each pre-timing period. By controlling the driving of the light detection device of the camera 11102 in synchronization with the timing of the change in the light intensity to acquire images in a time-division manner and synthesize the images, a high-dynamic range image without under-exposed occlusion shadows and over-exposed highlights can be generated.

[0310] In addition, the light source device 11203 can supply light in a predetermined wavelength band corresponding to special light observation. In special light observation, for example, by using the wavelength dependence of light absorption in body tissues to emit light having a narrower band than the illumination light (i.e., white light) during normal observation, narrow-band observation (narrow-band imaging) for photographing a predetermined tissue such as blood vessels in the mucosal surface layer with high contrast is performed. In addition, in special light observation, fluorescence observation in which an image is obtained from fluorescence generated by emitting excitation light is performed. In fluorescence observation, for example, excitation light can be irradiated onto the body tissue to observe the fluorescence from the body tissue (autofluorescence observation), or a reagent such as indocyanine green (ICG) can be locally injected into the body tissue and excitation light corresponding to the fluorescence wavelength of the reagent can be emitted to obtain a fluorescence image. The light source device 11203 can supply narrow-band light and / or excitation light suitable for the above-described special light observation.

[0311] Figure 39 is a block diagram showing Figure 38 an example of the functional configuration of the camera 11102 and the CCU 11201 shown.

[0312] The camera 11102 includes a lens unit 11401, an imaging unit 11402, a driving unit 11403, a communication unit 11404, and a camera control unit 11405. The CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera 11102 and the CCU 11201 are connected by a transmission cable 11400 for communicating with each other.

[0313] The lens unit 11401 is an optical system provided at the connection portion with the lens barrel 11101. Observation light received from the distal end of the lens barrel 11101 is guided to the camera 11102 and incident on the lens unit 11401. The lens unit 11401 includes a combination of a plurality of lenses having a zoom lens and a focus lens.

[0314] The number of light detection devices included in the imaging unit 11402 can be one (single-board type) or multiple (multi-board type). When the imaging unit 11402 is configured as a multi-board type, for example, image signals corresponding to each RGB are generated by the light detection devices, and a color image can be obtained by synthesizing the image signals. Alternatively, the imaging unit 11402 can also be configured to have a pair of light detection devices for acquiring image signals for the right eye and the left eye for three-dimensional (3D) display. If 3D display is performed, the surgeon 11131 can more accurately grasp the depth of the body tissues in the surgical site. Note that when the imaging unit 11402 is configured as a multi-board type, a plurality of lens units 11401 are provided corresponding to each light detection device.

[0315] In addition, the imaging unit 11402 does not have to be provided on the camera 11102. For example, the imaging unit 11402 can be provided directly behind the objective lens inside the lens barrel 11101.

[0316] The drive unit 11403 includes an actuator and moves the zoom lens and the focus lens of the lens unit 11401 along the optical axis by a predetermined distance under the control of the camera control unit 11405. Therefore, the magnification and focus of the image captured by the imaging unit 11402 can be appropriately adjusted.

[0317] The communication unit 11404 includes a communication device for transmitting and receiving various types of information to and from the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400.

[0318] In addition, the communication unit 11404 receives a control signal for controlling the drive of the camera 11102 from the CCU 11201 and supplies the control signal to the camera control unit 11405. The control signal includes information related to imaging conditions, for example, information specifying the frame rate of the captured image, information specifying the exposure value at the time of imaging, and / or information specifying the magnification and focus of the captured image, etc.

[0319] Note that imaging conditions such as the frame rate, exposure value, magnification, and focus can be appropriately specified by the user, or can be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. In the latter case, the automatic exposure (AE) function, the automatic focus (AF) function, and the automatic white balance (AWB) function are incorporated in the endoscope 11100.

[0320] The camera control unit 11405 controls the drive of the camera 11102 based on the control signal received from the CCU 11201 via the communication unit 11404.

[0321] The communication unit 11411 includes a communication device for transmitting and receiving various types of information to and from the camera 11102. The communication unit 11411 receives the image signal transmitted from the camera 11102 via the transmission cable 11400.

[0322] In addition, the communication unit 11411 transmits a control signal for controlling the driving of the camera 11102 to the camera 11102. The image signal and the control signal can be transmitted by electrical communication, optical communication, etc.

[0323] The image processing unit 11412 performs various types of image processing on the image signal in the form of RAW data transmitted from the camera 11102.

[0324] The control unit 11413 performs various types of control related to imaging of the surgical area, etc. performed by the endoscope 11100 and display of the captured images obtained by imaging the surgical area, etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera 11102.

[0325] In addition, the control unit 11413 controls the display device 11202 to display the captured images of the surgical area, etc. based on the image signal on which image processing has been performed by the image processing unit 11412. In this case, the control unit 11413 can identify various objects in the captured image by using various image recognition techniques. For example, the control unit 11413 detects the edge shape and / or color, etc. of the objects included in the captured image to identify surgical instruments such as forceps, specific living body parts, bleeding, fog when using the energy instrument 11112, etc. When controlling the display device 11202 to display the captured image, the control unit 11413 can cause the display device 11202 to display various types of surgical support information of the image having the surgical area in an overlapping manner by using the recognition result. When the surgical support information is displayed in an overlapping manner and presented to the surgeon 11131, the burden on the surgeon 11131 can be reduced, and the surgeon 11131 can perform the surgery reliably.

[0326] The transmission cable 11400 that connects the camera 11102 and the CCU 11201 to each other is an electrical signal cable for communication of electrical signals, an optical fiber for optical communication, or a composite cable for both electrical signals and optical communication.

[0327] Here, in the example shown in the drawings, communication is performed by using wired communication of the transmission cable 11400, but communication between the camera 11102 and the CCU 11201 can be performed by wireless communication.

[0328] Examples of endoscopic surgical systems to which the technology according to the embodiments of the present disclosure can be applied have been described above. For example, the technology according to the embodiments of the present disclosure can be applied to the imaging unit 11402. By applying the technology according to the embodiments of the present disclosure to the imaging unit 11402, the detection accuracy can be improved.

[0329] Note that although an endoscopic surgical system is taken as an example for description here, the technology according to the embodiments of the present disclosure can be applied to other systems such as a microsurgical system.

[0330] <Application examples of mobile bodies>

[0331] The technology according to the present disclosure can be applied to various products. For example, the technology according to the present disclosure is implemented as a device to be installed on any type of mobile body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility device, an airplane, a drone, a ship, a robot, a construction machine, or an agricultural machine (tractor).

[0332] Figure 40 It is a block diagram of a schematic configuration example of a vehicle control system which is an example of a mobile body control system to which the technology according to the embodiments of the present disclosure can be applied.

[0333] The vehicle control system 12000 includes a plurality of electronic control units connected to each other via a communication network 12001. In Figure 40 the example shown, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside vehicle information detection unit 12030, an inside vehicle information detection unit 12040, and an integrated control unit 12050. In addition, as a functional configuration of the integrated control unit 12050, a microcomputer 12051, a sound / image output unit 12052, and a vehicle-mounted network interface (I / F) 12053 are shown.

[0334] The drive system control unit 12010 controls the operation of devices related to the drive system of the vehicle according to various programs. For example, the drive system control unit 12010 serves as a control device for a driving force generation device such as an internal combustion engine or a drive motor for generating the driving force of the vehicle, a driving force transmission mechanism for transmitting the driving force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, a braking device for generating the braking force of the vehicle, and the like.

[0335] The main body system control unit 12020 controls the operations of various devices provided on the vehicle body according to various programs. For example, the main body system control unit 12020 serves as a control device for a keyless entry system, a smart key system, an electric window device, or various lights such as headlamps, taillamps, brake lights, turn signal lights, and fog lights. In this case, radio waves transmitted from a portable device or signals from various switches used in place of buttons can be input to the main body system control unit 12020. The main body system control unit 12020 receives the input of the radio waves or signals and controls the vehicle door lock device, electric window device, lights, etc.

[0336] The vehicle exterior information detection unit 12030 detects information related to the exterior of the vehicle including the vehicle control system 12000. For example, the vehicle exterior information detection unit 12030 is connected to the imaging unit 12031. The vehicle exterior information detection unit 12030 causes the imaging unit 12031 to capture an image of the vehicle exterior and receives the captured image. The vehicle exterior information detection unit 12030 can perform processing to detect objects such as people, cars, obstacles, signs, words on the road, etc. or processing to detect the distance thereto based on the received image.

[0337] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of received light. The imaging unit 12031 can output the electrical signal as an image, or can output the electrical signal as information related to distance measurement. In addition, the light received by the imaging unit 12031 can be visible light, or can be invisible light such as infrared light.

[0338] The vehicle interior information detection unit 12040 detects information related to the interior of the vehicle. For example, the vehicle interior information detection unit 12040 is connected to the driver state detection unit 12041 that detects the state of the driver. For example, the driver state detection unit 12041 includes a camera that captures an image of the driver. Based on the detection information input from the driver state detection unit 12041, the vehicle interior information detection unit 12040 can calculate the driver's fatigue or concentration, or can determine whether the driver has fallen asleep in the sitting position.

[0339] The microcomputer 12051 can calculate control target values for a driving force generating device, a steering mechanism, or a braking device based on information related to the interior and exterior of the vehicle obtained by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040, and can output a control instruction to the drive system control unit 12010. For example, the microcomputer 12051 can perform coordinated control to implement functions of an advanced driver assistance system (ADAS) including vehicle collision avoidance or mitigation, following driving based on a following distance, vehicle speed holding driving, vehicle collision warning, vehicle lane departure warning, etc.

[0340] In addition, the microcomputer 12051 can perform coordinated control by controlling a driving force generation device, a steering mechanism, a braking device, etc. based on information about the outside or inside of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040, so as to achieve autonomous driving of the vehicle without depending on the driver's operation, etc.

[0341] In addition, the microcomputer 12051 can output a control command to the main system control unit 12020 based on information related to the outside of the vehicle obtained by the outside vehicle information detection unit 12030. For example, the microcomputer 12051 controls the headlights according to the positions of the vehicle ahead or the oncoming vehicle detected by the outside vehicle information detection unit 12030 to perform coordinated control to achieve glare prevention such as switching the high beam to the low beam.

[0342] The sound / image output unit 12052 transmits at least one of a sound and an image output signal to an output device capable of notifying information to vehicle occupants or the outside of the vehicle visually or auditorily. In Figure 40 the example, as the output device, an audio speaker 12061, a display unit 12062, and a dashboard 12063 are shown. For example, the display unit 12062 may include at least one of an in-vehicle display and a head-up display.

[0343] Figure 41 is a diagram showing an example of the installation position of the imaging unit 12031.

[0344] In Figure 41 it, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0345] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided at positions such as the front of the vehicle 12100, side mirrors, rear bumpers, rear doors, and the upper side of the windshield inside the vehicle. The imaging unit 12101 provided at the front of the vehicle and the imaging unit 12105 provided at the upper side of the windshield inside the vehicle mainly obtain images in front of the vehicle 12100. The imaging units 12102 and 12103 provided in the side mirrors mainly obtain images on the sides of the vehicle 12100. The imaging unit 12104 provided in the rear bumper or rear door mainly obtains images behind the vehicle 12100. The imaging unit 12105 at the upper side of the windshield inside the vehicle is mainly used to detect vehicles ahead, pedestrians, obstacles, traffic signals, traffic signs, lanes, etc.

[0346] By the way, Figure 41An example of the shooting ranges of imaging units 12101 to 12104 is shown. Imaging range 12111 represents the imaging range of imaging unit 12101 provided at the front of the vehicle. Imaging ranges 12112 and 12113 respectively represent the imaging ranges of imaging units 12102 and 12103 provided at the side mirrors. Imaging range 12114 represents the imaging range of imaging unit 12104 provided at the rear bumper or the rear door. For example, by overlapping the image data captured by imaging units 12101 to 12104 with each other, a bird's-eye view image of vehicle 12100 seen from above is obtained.

[0347] At least one of imaging units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of imaging units 12101 to 12104 may be a stereo camera composed of a plurality of light detection devices, or may be a light detection device having pixels for phase difference detection.

[0348] For example, based on the distance information obtained from imaging units 12101 to 12104, the microcomputer 12051 can determine the distance to each solid object within imaging ranges 12111 to 12114 and the temporal change of the distance (relative speed with respect to vehicle 12100), and thus extract the solid object that is particularly closest and traveling in a direction substantially the same as that of vehicle 12100 at a predetermined speed (e.g., 0 km / h or more) on the driving route of vehicle 12100 as the preceding vehicle. In addition, the microcomputer 12051 can set the distance between vehicles that is ensured in advance in front of the preceding vehicle, and can perform automatic braking control (including follow-up driving stop control), automatic acceleration control (including follow-up driving start control), etc. Therefore, it is possible to perform coordinated control such as autonomous driving that aims for the vehicle to drive autonomously without relying on the driver's operation.

[0349] For example, based on the distance information obtained from the imaging units 12101 to 12104, the microcomputer 12051 can classify the solid object data of solid objects into the solid object data of two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other solid objects, extract the classified solid object data, and automatically avoid obstacles using the extracted solid object data. For example, the microcomputer 12051 identifies the obstacles around the vehicle 12100 as the obstacles that the driver of the vehicle 12100 can visually recognize and the obstacles that the driver of the vehicle 12100 has difficulty visually recognizing. Then, the microcomputer 12051 determines the collision risk indicating the degree of danger of collision with each obstacle. When the collision risk is equal to or higher than the set value and there is a possibility of collision, the microcomputer 12051 outputs a warning to the driver via the audio speaker 12061 and the display unit 12062 or performs forced deceleration or avoidance steering via the drive system control unit 12010. The microcomputer 12051 can assist driving to avoid collisions.

[0350] At least one of the imaging units 12101 to 12104 can be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can identify a pedestrian by determining whether a pedestrian exists in the captured images of the imaging units 12101 to 12104. For example, the identification of a pedestrian is performed through the process of extracting feature points in the captured images of the imaging units 12101 to 12104 that are infrared cameras and through the process of performing pattern matching processing on a series of feature points indicating the outline of an object to determine whether the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian exists in the captured images of the imaging units 12101 to 12104 and thus identifies the pedestrian, the sound / image output unit 12052 controls the display unit 12062 to display a quadrilateral contour line for emphasis in an overlapping manner on the identified pedestrian. The sound / image output unit 12052 can also control the display unit 12062 to display an icon indicating the pedestrian or the like at a desired position.

[0351] Examples of the mobile body control system to which the technology according to the embodiments of the present disclosure can be applied have been described above. The technology according to the embodiments of the present disclosure can be applied to the imaging unit 12031 among the above configurations. Specifically, the light detection device (for example, the light detection device 1) according to the above embodiments and their modification examples 1 to 12 can be applied to the imaging unit 12031. By applying the technology according to the embodiments of the present disclosure to the imaging unit 12031, it is possible to capture high-definition images with less noise, so that high-precision control can be performed using the captured images in the mobile body control system.

[0352] Although the present disclosure has been described above with reference to the embodiments, modification examples 1 to 12, application examples, and usage examples, the present technology is not limited to the embodiments and the like, and various other modifications can be made.

[0353] Note that the effects described in this specification are merely exemplary. The effects of the present disclosure are not limited to the effects described in this specification. The present disclosure may have effects other than those described in this specification.

[0354] Note that the present disclosure may also have the following configuration. According to the following configuration, two-dimensional image information and depth information can be obtained by aligning the optical axes. In addition, the driving of the first sensor pixels and the second sensor pixels can be synchronized, thereby suppressing color mixing.

[0355] (1) An optical detection device, comprising:

[0356] a plurality of lenses;

[0357] a first substrate including a plurality of image pixels, each of the plurality of image pixels including a first photodiode configured to output a first signal based on first light that has passed through a first portion of the plurality of lenses;

[0358] a second substrate including a plurality of depth pixels, each of the plurality of depth pixels including a second photodiode configured to output a second signal based on second light that has passed through a second portion of the plurality of lenses, the second portion including some or all of the first portion; and

[0359] a third substrate including a first processing circuit and a second processing circuit, the first processing circuit being configured to process the first signal into image data, and the second processing circuit being configured to process the second signal into depth data,

[0360] wherein, in a stacking direction, the second substrate is disposed on the third substrate, the first substrate is disposed on the second substrate, and the plurality of lenses are disposed on the first substrate.

[0361] (2) The optical detection device according to (1), wherein each of the plurality of image pixels further includes a transfer transistor, a reset transistor, and an amplification transistor.

[0362] (3) The optical detection device according to any one of (1) and (2), wherein

[0363] the plurality of image pixels define an imaging region,

[0364] the plurality of depth pixels define a sensing region, and

[0365] when viewed from a plan view, the imaging region overlaps with the sensing region.

[0366] (4) The optical detection device according to (3), wherein the imaging area and the sensing area have different sizes.

[0367] (5) The optical detection device according to (4), wherein the imaging area is larger than the sensing area, and the imaging area completely overlaps with the sensing area.

[0368] (6) The optical detection device according to (3), wherein the imaging area and the sensing area have the same size.

[0369] (7) The optical detection device according to any one of (1) to (6), wherein

[0370] The light passing through one of the plurality of lenses is received by one of the plurality of image pixels and one of the plurality of depth pixels.

[0371] (8) The optical detection device according to any one of (1) to (7), wherein the second substrate is bonded and electrically connected to the third substrate by copper - copper (Cu - Cu) bonding, and wherein one of the plurality of depth pixels is electrically connected to the second processing circuit through the electrical connection by the Cu - Cu bonding.

[0372] (9) The optical detection device according to any one of (1) to (8), further comprising:

[0373] A first electrode that extends through a via hole in the second substrate and is located between the first substrate and the third substrate, and the first electrode electrically connects one of the plurality of image pixels to the first processing circuit.

[0374] (10) The optical detection device according to (9), wherein the plurality of image pixels define an imaging area in the first substrate, and the first electrode is electrically connected to the first substrate at a position outside the imaging area.

[0375] (11) The optical detection device according to (9), wherein the plurality of image pixels define an imaging area in the first substrate, and the first electrode is electrically connected to the first substrate at a position within the imaging area.

[0376] (12) The optical detection device according to any one of (9) to (11), wherein the second substrate includes a first wiring layer facing the first substrate, a second wiring layer facing the third substrate, and a light receiving layer disposed between the first wiring layer and the second wiring layer in the stacking direction, and wherein the first electrode extends from the first wiring layer to the second wiring layer.

[0377] (13) The optical detection device according to (12), wherein

[0378] The first end of the first electrode is joined to the second electrode of the first substrate, and

[0379] the second end of the first electrode is joined to the third electrode of the third substrate, the second end being opposite to the first end.

[0380] (14) The light detection device according to any one of (1) to (13), wherein

[0381] the second processing circuit includes a quenching resistor and an inverter.

[0382] (15) A light detection device, comprising:

[0383] a plurality of lenses;

[0384] a first substrate including a plurality of image pixels, each of the plurality of image pixels including a first photodiode configured to output a first data signal based on first light passing through a first portion of the plurality of lenses;

[0385] a second substrate including a plurality of depth pixels, each of the plurality of depth pixels including a second photodiode configured to output a second signal based on second light passing through a second portion of the plurality of lenses, the second portion including some or all of the first portion; and

[0386] a third substrate including a first processing circuit and a second processing circuit, the first processing circuit being configured to process the first signal into image data, and the second processing circuit being configured to process the second signal into depth data,

[0387] light passing through one of the plurality of lenses is received by one of the plurality of image pixels and one of the plurality of depth pixels.

[0388] (16) The light detection device according to (15), wherein each of the plurality of image pixels further includes a transfer transistor, a reset transistor, and an amplification transistor.

[0389] (17) The light detection device according to any one of (15) and (16), further comprising:

[0390] a first electrode extending through a via in the second substrate and located between the first substrate and the third substrate, the first electrode electrically connecting one of the plurality of image pixels to the first processing circuit.

[0391] (18) The light detection device according to (17), wherein the plurality of image pixels define an imaging region in the first substrate, and the first electrode is electrically connected to the first substrate at a position outside the imaging region.

[0392] (19) The optical detection device according to (17), wherein the plurality of image pixels define an imaging region in the first substrate, and a first electrode is electrically connected to the first substrate at a position within the imaging region.

[0393] (20) The optical detection device according to any one of (17) to (19), wherein the second substrate includes a first wiring layer facing the first substrate, a second wiring layer facing the third substrate, and a light receiving layer disposed between the first wiring layer and the second wiring layer in a stacking direction, and wherein the first electrode extends from the first wiring layer to the second wiring layer.

[0394] (21) The optical detection device according to (20), wherein

[0395] a first end of the first electrode is bonded to a second electrode of the first substrate, and

[0396] a second end of the first electrode is bonded to a third electrode of the third substrate, the second end being opposite to the first end.

[0397] (22) The optical detection device according to any one of (15) to (21), wherein

[0398] the second processing circuit includes a quenching resistor and an inverter.

[0399] (23) An electronic device, comprising:

[0400] a plurality of lenses;

[0401] a first substrate including a plurality of image pixels, each of the plurality of image pixels including a first photodiode configured to output a first signal of data based on first light passing through a first portion of the plurality of lenses;

[0402] a second substrate including a plurality of depth pixels, each of the plurality of depth pixels including a second photodiode configured to output a second signal based on second light passing through a second portion of the plurality of lenses, the second portion including some or all of the first portion; and

[0403] a third substrate including a first processing circuit and a second processing circuit, the first processing circuit being configured to process the first signal into image data, and the second processing circuit being configured to process the second signal into depth data,

[0404] wherein, in a stacking direction, the second substrate is disposed on the third substrate, the first substrate is disposed on the second substrate, and the plurality of lenses are disposed on the first substrate.

[0405] (24) The electronic device according to claim (23), wherein each of the plurality of image pixels further includes a transfer transistor, a reset transistor, and an amplification transistor.

[0406] (25) The electronic device according to any one of (23) and (24), wherein

[0407] the plurality of image pixels define an imaging region,

[0408] the plurality of depth pixels define a sensing region, and

[0409] when viewed from a plan view, the imaging region overlaps with the sensing region.

[0410] (26) The electronic device according to (25), wherein the imaging region and the sensing region have different sizes.

[0411] (27) The electronic device according to (26), wherein the imaging region is larger than the sensing region, and the imaging region completely overlaps with the sensing region.

[0412] (28) The electronic device according to (25), wherein the imaging region and the sensing region have the same size.

[0413] (29) The electronic device according to any one of (23) to (28), wherein

[0414] light passing through one of the plurality of lenses is received by one of the plurality of image pixels and one of the plurality of depth pixels.

[0415] (30) The electronic device according to any one of (23) to (29), wherein the second substrate is bonded and electrically connected to the third substrate by copper - copper (Cu - Cu) bonding, and wherein an electrical connection through the Cu - Cu bonding electrically connects one of the plurality of depth pixels to the second processing circuit.

[0416] (31) The electronic device according to any one of (23) to (30) further includes:

[0417] a first electrode that extends through a via hole in the second substrate and is located between the first substrate and the third substrate, and the first electrode electrically connects one of the plurality of image pixels to the first processing circuit.

[0418] (32) The electronic device according to (31), wherein the plurality of image pixels define an imaging region in the first substrate, and the first electrode is electrically connected to the first substrate at a position outside the imaging region.

[0419] (33) The electronic device according to (31), wherein the plurality of image pixels define an imaging region in the first substrate, and a first electrode is electrically connected to the first substrate at a position within the imaging region.

[0420] (34) The electronic device according to any one of (31) to (33), wherein the second substrate includes a first wiring layer facing the first substrate, a second wiring layer facing the third substrate, and a light receiving layer disposed between the first wiring layer and the second wiring layer in a stacking direction, and wherein the first electrode extends from the first wiring layer to the second wiring layer.

[0421] (35) The electronic device according to (34), wherein

[0422] a first end of the first electrode is joined to a second electrode of the first substrate, and

[0423] a second end of the first electrode is joined to a third electrode of the third substrate, the second end being opposite to the first end.

[0424] (36) The electronic device according to any one of (23) to (35), wherein

[0425] the second processing circuit includes a quenching resistor and an inverter.

[0426] (B-1) A light detection device, comprising:

[0427] a first substrate including a first light receiving layer in which a plurality of first sensor pixels for acquiring two-dimensional image information are arranged in an array;

[0428] a second substrate stacked on the first substrate and including a second light receiving layer in which a plurality of second sensor pixels for acquiring depth image information are arranged in an array so as to overlap the plurality of first sensor pixels; and

[0429] a third substrate stacked on the second substrate and including a logic circuit for processing pixel signals output from the plurality of first sensor pixels and the plurality of second sensor pixels.

[0430] (B-2) The light detection device according to (1), wherein

[0431] the first light receiving layer is provided with a first light receiving portion in each of the plurality of first sensor pixels, the second light receiving layer is provided with a second light receiving portion in each of the plurality of second sensor pixels, and

[0432] signal light detected in the second light receiving portion is incident via the first light receiving portion.

[0433] (B-3) The optical detection device according to (1) or (2), wherein the second substrate and the third substrate are electrically connected to each other by hybrid bonding.

[0434] (B-4) The optical detection device according to any one of (1) to (3), wherein the first substrate and the second substrate are electrically connected to each other by hybrid bonding.

[0435] (B-5) The optical detection device according to any one of (1) to (4), wherein

[0436] the first light receiving layer has a first surface serving as a light incident surface and a second surface on the opposite side of the first surface, and

[0437] the first substrate and the second substrate are electrically connected to each other by a through-wiring that penetrates the second light receiving layer from the first surface.

[0438] (B-6) The optical detection device according to any one of (1) to (5), wherein

[0439] the first light receiving layer has a first surface serving as a light incident surface and a second surface on the opposite side of the first surface, and

[0440] the first substrate and the third substrate are electrically connected to each other by a through-wiring that penetrates the second light receiving layer from the first surface and reaches the third substrate.

[0441] (B-7) The optical detection device according to (6), wherein signals output from the plurality of first sensor pixels are transmitted to the logic circuit via the through-wiring.

[0442] (B-8) The optical detection device according to any one of (3) to (7), wherein signals output from the plurality of second sensor pixels are transmitted to the logic circuit via hybrid bonding.

[0443] (B-9) The optical detection device according to any one of (1) to (8), wherein a first array region in which the plurality of first sensor pixels are arranged in an array is larger than a second array region in which the plurality of second sensor pixels are arranged in an array.

[0444] (B-10) The optical detection device according to (9), wherein the first array region encloses the second array region in a plan view.

[0445] (B-11) The optical detection device according to any one of (1) to (10), wherein the plurality of first sensor pixels are arranged without gaps.

[0446] (B-12) The light detection device according to any one of (1) to (11), wherein the pixel size of each of the plurality of first sensor pixels is smaller than the pixel size of each of the plurality of second sensor pixels.

[0447] (B-13) The light detection device according to any one of (1) to (12), wherein one second sensor pixel overlaps the plurality of first sensor pixels in the stacking direction.

[0448] (B-14) The light detection device according to any one of (1) to (13), wherein one second sensor pixel overlaps four first sensor pixels configured in 2 rows × 2 columns in the stacking direction.

[0449] (B-15) The light detection device according to any one of (1) to (14), wherein in a plan view, the pitch of the pixel block including the plurality of first sensor pixels is substantially the same as the pixel pitch of the plurality of second sensor pixels.

[0450] (B-16) The light detection device according to (15), wherein

[0451] the first substrate and the second substrate are electrically connected to each other by hybrid bonding, and

[0452] a plurality of bonding portions forming the hybrid bonding are arranged between the plurality of second sensor pixels adjacent to each other.

[0453] (B-17) The light detection device according to any one of (1) to (16), wherein a part of the logic circuit is provided in the first substrate.

[0454] (B-18) The light detection device according to any one of (1) to (17), wherein a part of the logic circuit is provided in the second substrate.

[0455] (B-19) The light detection device according to any one of (2) to (18), wherein

[0456] the first light receiving layer has a first surface serving as a light incident surface and a second surface on the opposite side of the first surface, and

[0457] the first substrate further includes a first wiring layer on the second surface side, and a waveguide for the signal light detected in the second light receiving portion is included in the layer of the first wiring layer.

[0458] (B-20) The light detection device according to (19), wherein an internal lens for converging the signal light on the plurality of second sensor pixels is arranged in the waveguide.

[0459] (B-21) The optical detection device according to any one of (2) to (20), wherein

[0460] the second substrate further includes a second wiring layer on the opposite surface side of the first substrate of the second light receiving layer, and

[0461] an internal lens that converges signal light onto the plurality of second sensor pixels is disposed in the second wiring layer.

[0462] (B-22) The optical detection device according to any one of (2) to (21), wherein a photodiode including a semiconductor is formed in the first light receiving portion.

[0463] (B-23) The optical detection device according to any one of (1) to (22), wherein a single-photon avalanche diode or an avalanche photodiode including a semiconductor is formed in the second light receiving portion.

[0464] (B-24) The optical detection device according to any one of (1) to (23), wherein the first substrate further includes an optical member on the light incident side.

[0465] (B-25) The optical detection device according to (24), wherein a color filter or a color router is included as the optical member.

[0466] (B-26) The optical detection device according to (24) or (25), wherein a microlens or a superlens is included as the optical member.

[0467] (B-27) The optical detection device according to any one of (1) to (26), further including a band-pass filter that selectively transmits a predetermined wavelength band between the first substrate and the second substrate.

[0468] (B-28) An electronic device, which includes an optical detection device,

[0469] the optical detection device includes

[0470] a first substrate, which includes a first light receiving layer in which a plurality of first sensor pixels for acquiring two-dimensional image information are arranged in an array,

[0471] a second substrate, which is laminated on the first substrate, and includes a second light receiving layer in which a plurality of second sensor pixels for acquiring depth image information are arranged in an array so as to overlap the plurality of first sensor pixels, and

[0472] a third substrate, which is laminated on the second substrate, and includes a logic circuit that processes pixel signals output from the plurality of first sensor pixels and the plurality of second sensor pixels.

[0473] (B-29) A light detection device, comprising:

[0474] A first substrate, which includes a first light receiving layer in which a plurality of first sensor pixels for acquiring two-dimensional image information are arranged in an array without gaps;

[0475] A second substrate, which is laminated on the first substrate and includes a second light receiving layer in which a plurality of second sensor pixels for acquiring depth image information are arranged in an array so as to overlap the plurality of first sensor pixels; and

[0476] A third substrate, which is laminated on the second substrate and includes a logic circuit for controlling the driving of the plurality of first sensor pixels and the plurality of second sensor pixels.

[0477] [List of reference numerals]

[0478] 1, 2, 3, 4A, 4B, 5A, 5B, 6, 7A, 7B, 7C, 8, 9, 10, 11A, 11B, 11C, 11D Light detection device

[0479] 100 First substrate

[0480] 100A, 200A Pixel array section

[0481] 100S, 200S Light receiving layer

[0482] 100T, 100T-1, 100T-2, 200T-1, 200T-2, 300T Wiring 101, 201, 203, 206, 301 Contact portion

[0483] 110, 110A, 110B, 210 Pixel

[0484] 111, 211 Light receiving portion

[0485] 112, 212 Separation portion

[0486] 113, 212A Light-shielding film

[0487] 114, 212B Insulating film

[0488] 121, 221, 231, 311 Interlayer insulating layer

[0489] 123, 242 Internal lens

[0490] 124 Insulating layer

[0491] 131, 131R, 131G, 131G, 131B, 131Y Color filter

[0492] 132 and 135 On-chip lenses

[0493] 133 Superlens

[0494] 134 Color router

[0495] 202, 204, 205, 20A, 205B Through-holes

[0496] 213 p-type semiconductor region (p)

[0497] 214 Multiplication section

[0498] 214A n-type semiconductor region (n + )

[0499] 214B p-type semiconductor region (p + )

[0500] 215 and 216 Contact layers

[0501] 217 Fixed charge film

[0502] 300S Semiconductor layer

[0503] 511 and 525 Readout sections

[0504] 531 Input / output section

[0505] 532 Signal processing section

[0506] 533 Pixel circuit section

[0507] 534 Histogram generation section

[0508] 600 Support substrate

[0509] TR Transfer transistor

[0510] RST Reset transistor

[0511] AMP Amplification transistor

[0512] SEL Selection transistor

[0513] FD Floating diffusion section

[0514] M1, M2, M3, M4, M5, M6, M7, M8 Wiring layers

[0515] S1... Light incident side

Claims

1. A light detection device, comprising: a plurality of lenses; a first substrate including a plurality of image pixels, each of the plurality of image pixels including a first photodiode configured to output a first signal based on first light passing through a first portion of the plurality of lenses; a second substrate including a plurality of depth pixels, each of the plurality of depth pixels including a second photodiode configured to output a second signal based on second light passing through a second portion of the plurality of lenses, the second portion including some or all of the first portion; and a third substrate including a first processing circuit and a second processing circuit, the first processing circuit configured to process the first signal into image data, and the second processing circuit configured to process the second signal into depth data, wherein, in a stacking direction, the second substrate is disposed on the third substrate, the first substrate is disposed on the second substrate, and the plurality of lenses are disposed on the first substrate.

2. The light detection device according to claim 1, wherein each of the plurality of image pixels further includes a transfer transistor, a reset transistor, and an amplification transistor.

3. The light detection device according to claim 1, wherein the plurality of image pixels define an imaging region, the plurality of depth pixels define a sensing region, and when viewed from a plan view, the imaging region overlaps with the sensing region.

4. The light detection device according to claim 3, wherein the imaging region and the sensing region have different sizes.

5. The light detection device according to claim 4, wherein the imaging region is larger than the sensing region, and the imaging region completely overlaps with the sensing region.

6. The light detection device according to claim 3, wherein the imaging region and the sensing region have the same size.

7. The light detection device according to claim 1, wherein light passing through one of the plurality of lenses is received by one of the plurality of image pixels and one of the plurality of depth pixels.

8. The light detection device according to claim 1, wherein the second substrate is bonded and electrically connected to the third substrate by copper - copper (Cu - Cu) bonding, and wherein an electrical connection through the Cu - Cu bonding electrically connects one of the plurality of depth pixels to the second processing circuit.

9. The light detection device according to claim 1, further comprising: a first electrode extending through a via in the second substrate and located between the first substrate and the third substrate, the first electrode electrically connecting one of the plurality of image pixels to the first processing circuit.

10. The light detection device according to claim 9, wherein the plurality of image pixels define an imaging region in the first substrate, and the first electrode is electrically connected to the first substrate at a position outside the imaging region.

11. The light detection device according to claim 9, wherein the plurality of image pixels define an imaging region in the first substrate, and the first electrode is electrically connected to the first substrate at a position within the imaging region.

12. The optical detection device according to claim 9, wherein the second substrate includes a first wiring layer facing the first substrate, a second wiring layer facing the third substrate, and a light receiving layer disposed between the first wiring layer and the second wiring layer in a stacking direction, and wherein the first electrode extends from the first wiring layer to the second wiring layer.

13. The optical detection device according to claim 12, wherein a first end of the first electrode is bonded to a second electrode of the first substrate, and a second end of the first electrode is bonded to a third electrode of the third substrate, the second end being opposite to the first end.

14. The optical detection device according to claim 1, wherein the second processing circuit includes a quenching resistor and an inverter.

15. An optical detection device, comprising: a plurality of lenses; a first substrate including a plurality of image pixels, each of the plurality of image pixels including a first photodiode configured to output a first signal of data based on first light passing through a first portion of the plurality of lenses; a second substrate including a plurality of depth pixels, each of the plurality of depth pixels including a second photodiode configured to output a second signal of data based on second light passing through a second portion of the plurality of lenses, the second portion including some or all of the first portion; and a third substrate including a first processing circuit and a second processing circuit, the first processing circuit being configured to process the first signal into image data, and the second processing circuit being configured to process the second signal into depth data, light passing through one of the plurality of lenses is received by one of the plurality of image pixels and one of the plurality of depth pixels.

16. The optical detection device according to claim 15, wherein each of the plurality of image pixels further includes a transfer transistor, a reset transistor, and an amplification transistor.

17. The optical detection device according to claim 15, further comprising: a first electrode extending through a via in the second substrate and located between the first substrate and the third substrate, the first electrode electrically connecting one of the plurality of image pixels to the first processing circuit.

18. The optical detection device according to claim 17, wherein the plurality of image pixels define an imaging region in the first substrate, and the first electrode is electrically connected to the first substrate at a position outside the imaging region.

19. The optical detection device according to claim 17, wherein the plurality of image pixels define an imaging region in the first substrate, and the first electrode is electrically connected to the first substrate at a position within the imaging region.

20. The optical detection device according to claim 17, wherein the second substrate includes a first wiring layer facing the first substrate, a second wiring layer facing the third substrate, and a light receiving layer disposed between the first wiring layer and the second wiring layer in a stacking direction, and wherein the first electrode extends from the first wiring layer to the second wiring layer.

21. The optical detection device according to claim 20, wherein a first end of the first electrode is bonded to a second electrode of the first substrate, and a second end of the first electrode is bonded to a third electrode of the third substrate, the second end being opposite to the first end.

22. The optical detection device according to claim 15, wherein the second processing circuit includes a quenching resistor and an inverter.

23. An electronic device, comprising: a plurality of lenses; a first substrate including a plurality of image pixels, each of the plurality of image pixels including a first photodiode configured to output a first signal of data based on first light passing through a first portion of the plurality of lenses; a second substrate including a plurality of depth pixels, each of the plurality of depth pixels including a second photodiode configured to output a second signal of data based on second light passing through a second portion of the plurality of lenses, the second portion including some or all of the first portion; and a third substrate including a first processing circuit and a second processing circuit, the first processing circuit configured to process the first signal into image data, and the second processing circuit configured to process the second signal into depth data, wherein, in a stacking direction, the second substrate is disposed on the third substrate, the first substrate is disposed on the second substrate, and the plurality of lenses are disposed on the first substrate.

24. The electronic device according to claim 23, wherein, Each of the plurality of image pixels further includes a transfer transistor, a reset transistor, and an amplification transistor.

25. The electronic device according to claim 23, wherein the plurality of image pixels define an imaging region, the plurality of depth pixels define a sensing region, and when viewed from a plan view, the imaging region overlaps with the sensing region.

26. The electronic device according to claim 25, wherein the imaging region and the sensing region have different sizes.

27. The electronic device according to claim 26, wherein the imaging region is larger than the sensing region, and the imaging region completely overlaps with the sensing region.

28. The electronic device according to claim 25, wherein the imaging region and the sensing region have the same size.

29. The electronic device according to claim 23, wherein light passing through one of the plurality of lenses is received by one of the plurality of image pixels and one of the plurality of depth pixels.

30. The electronic device according to claim 23, wherein the second substrate is bonded and electrically connected to the third substrate by copper - copper (Cu - Cu) bonding, and wherein an electrical connection through the Cu - Cu bonding electrically connects one of the plurality of depth pixels to the second processing circuit.

31. The electronic device according to claim 23, further comprising: a first electrode extending through a via in the second substrate and located between the first substrate and the third substrate, the first electrode electrically connecting one of the plurality of image pixels to the first processing circuit.

32. The electronic device according to claim 31, wherein the plurality of image pixels define an imaging region in the first substrate, and the first electrode is electrically connected to the first substrate at a position outside the imaging region.

33. The electronic device according to claim 31, wherein the plurality of image pixels define an imaging region in the first substrate, and the first electrode is electrically connected to the first substrate at a position within the imaging region.

34. The electronic device according to claim 31, wherein the second substrate includes a first wiring layer facing the first substrate, a second wiring layer facing the third substrate, and a light receiving layer disposed between the first wiring layer and the second wiring layer in a stacking direction, and wherein the first electrode extends from the first wiring layer to the second wiring layer.

35. The electronic device according to claim 34, wherein a first end of the first electrode is joined to a second electrode of the first substrate, and a second end of the first electrode is joined to a third electrode of the third substrate, the second end being opposite to the first end.

36. The electronic device according to claim 23, wherein the second processing circuit includes a quenching resistor and an inverter.

Images