Heat dissipation plate and thin film deposition equipment and method

Abstract

The invention provides a heat dissipation plate, thin film deposition equipment and a thin film deposition method. The heat dissipation plate comprises a heat dissipation plate body and a plurality of supporting columns. The supporting columns are arranged at the bottom of the heat dissipation plate body and used for supporting the heat dissipation plate body so that a ventilation gap can be kept between the heat dissipation plate body and the supporting mechanism below the heat dissipation plate body. The ventilation gap is connected with a gas source so as to obtain gas. The gas enters the ventilation gap from the central area of the heat dissipation plate body and diffuses towards the edge area of the heat dissipation plate body. The ventilation gap can be kept below the heat dissipation plate body to form an air flow loop used for taking away heat in the center area of the heating disc, and therefore heat dissipation is conducted on the heating disc.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor device processing, and particularly to a heat sink, a thin film deposition apparatus, and a thin film deposition method. Background Art

[0002] During the process of depositing a thin film by radio frequency plasma enhanced chemical vapor deposition method, the temperature uniformity of the heating plate has a decisive influence on the quality of the thin film. However, in the existing thin film deposition apparatuses, the temperature uniformity of the heating plate is not high, resulting in poor uniformity of the deposited thin film. In addition, for the existing two-zone heating plate, the thickness of the thin film in the outer circle can be adjusted by adjusting the current ratio between the inner circle and the outer circle, but it is difficult to improve the temperature in the central region by this method.

[0003] In order to overcome the above-mentioned defects existing in the prior art, there is an urgent need in the art for an improved heat sink for taking away the heat in the central region of the heating plate, thereby dissipating heat from the heating plate. Summary of the Invention

[0004] The following presents a brief overview of one or more aspects to provide a basic understanding of these aspects. This overview is not an exhaustive survey of all contemplated aspects, and is neither intended to identify key or critical elements of all aspects nor to attempt to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to a more detailed description to follow.

[0005] In order to overcome the above-mentioned defects existing in the prior art, the present invention provides a heat sink, a thin film deposition apparatus and a thin film deposition method, which can form an air flow loop by maintaining an air ventilation gap below the heat sink body for taking away the heat in the central region of the heating plate, thereby dissipating heat from the heating plate.

[0006] Specifically, the heat sink provided according to the first aspect of the present invention includes a heat sink body and a plurality of support columns. The plurality of support columns are provided at the bottom of the heat sink body for supporting the heat sink body so as to maintain an air ventilation gap between it and the underlying support mechanism. The air ventilation gap is connected to a gas source to obtain a gas. The gas enters the air ventilation gap from the central region of the heat sink body and diffuses towards the edge region of the heat sink body.

[0007] Further, in some embodiments of the present invention, the heat sink body is in a ring structure. The gas source is located below the heat sink body, and the gas provided by it first passes over the heat sink body through the hollow part of the ring structure to contact the heating plate above it, and then returns to the air ventilation gap through the hollow part and diffuses towards the edge region of the heat sink body.

[0008] Furthermore, in some embodiments of the present invention, the gas source is a heat dissipation gas source, which provides heat dissipation gas to the ventilation gap during the film deposition stage to dissipate heat from the heat dissipation plate and the heating disk thereon.

[0009] Furthermore, in some embodiments of the present invention, the heat dissipation gas is at least one of Ar, N2, and He.

[0010] Furthermore, in some embodiments of the present invention, the gas source is a clean gas source, which provides clean gas to the ventilation gap during the cleaning phase of the process chamber to purge contaminants from the bottom of the heating plate and / or the ventilation gap.

[0011] Furthermore, in some embodiments of the present invention, the cleaning gas includes at least O2 and Ar.

[0012] Furthermore, in some embodiments of the present invention, a circumferential groove is provided on the upper surface of the heat sink body to achieve circumferential temperature regulation of the heating disk above the heat sink.

[0013] Further, in some embodiments of the present invention, the diameter of the heat sink body ranges from 200 mm to 380 mm, and the diameter of the hollow portion ranges from 60 mm to 160 mm. And / or the height of the support column ranges from 5 mm to 25 mm. And / or the distance between the upper surface of the heat sink body and the lower surface of the heating plate ranges from 0.3 mm to 3 mm.

[0014] In addition, the thin film deposition device provided according to the second aspect of the present invention comprises a process chamber and at least one gas source. The process chamber comprises a heating plate, a support mechanism, and a heat sink as provided in the first aspect of the present invention. The at least one gas source is at least connected to the ventilation gap between the heat sink and the support mechanism.

[0015] In addition, the above-mentioned thin film deposition method provided according to the third aspect of the present invention includes the following steps: in the thin film deposition stage, heat dissipation gas is introduced into the ventilation gap between the heat dissipation plate provided by the first aspect of the present invention and the supporting mechanism thereunder to at least dissipate heat for the heat dissipation plate.

[0016] Furthermore, in some embodiments of the present invention, the thin film deposition method further comprises the following steps: during a cleaning phase of the process chamber, introducing a cleaning gas into the ventilation gap to at least purge contaminants in the ventilation gap. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] After reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings, the above features and advantages of the present invention can be better understood. In the drawings, the components are not necessarily drawn to scale, and components having similar relevant characteristics or features may have the same or similar reference numerals.

[0018] Figure 1 FIG. 4 shows a schematic structural diagram of a thin film deposition apparatus provided according to some embodiments of the present invention.

[0019] Figure 2 FIG. 8 shows a schematic structural diagram of the upper surface of a heat sink provided according to some embodiments of the present invention.

[0020] Figure 3 FIG. 12 shows a schematic structural diagram of the lower surface of a heat sink provided according to some embodiments of the present invention.

[0021] Figure 4 FIG. 16 shows a graph of the variation of the normalized extinction coefficient value on the wafer surface with the wafer radius provided according to some embodiments of the present invention.

[0022] Figure 5 FIG. 20 shows a schematic diagram of the difference in extinction coefficients of the thin film on the wafer surface provided according to some embodiments of the present invention.

[0023] Reference numerals:

[0024] 11 Heating plate

[0025] 12 Support mechanism

[0026] 13 Heat sink

[0027] 131 Heat sink body

[0028] 132 Support column Detailed implementation manners

[0029] The following specific embodiments illustrate the implementation manners of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiments, this does not mean that the features of this invention are limited to this implementation manner. On the contrary, the purpose of introducing the invention in conjunction with the implementation manner is to cover other alternatives or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, many specific details will be included in the following description. The present invention can also be implemented without these details. In addition, in order to avoid confusing or obscuring the key points of the present invention, some specific details will be omitted in the description.

[0030] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

[0031] In addition, the "upper", "lower", "left", "right", "top", "bottom", "horizontal", and "vertical" used in the following description should be understood as the orientations shown in this section and the related drawings. This relative term is only for convenience of description and does not represent that the device described needs to be manufactured or operated in a specific orientation, so it should not be understood as a limitation to the present invention.

[0032] It can be understood that although terms such as "first", "second", and "third" can be used here to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first component, region, layer, and / or part discussed below can be referred to as the second component, region, layer, and / or part without departing from some embodiments of the present invention.

[0033] As described above, during the process of depositing a thin film by the radio frequency plasma enhanced chemical vapor deposition method, the temperature uniformity of the heating plate has a decisive influence on the quality of the thin film. However, in the existing thin film deposition equipment, the temperature uniformity of the heating plate is not high, resulting in poor uniformity of the deposited thin film. In addition, for the existing dual-zone heating plate, the thickness of the outer ring thin film can be adjusted by adjusting the current ratio of the inner ring and the outer ring, but it is difficult to improve the temperature of the central region by this method.

[0034] In order to overcome the above-mentioned defects existing in the prior art, the present invention provides a heat dissipation plate, a thin film deposition equipment, and a thin film deposition method, which can form an air flow circuit by maintaining an air ventilation gap below the heat dissipation plate body to take away the heat of the central region of the heating plate, thereby dissipating heat from the heating plate.

[0035] In some non-limiting embodiments, the above-mentioned heat dissipation plate provided by the first aspect of the present invention can be configured to be implemented in the thin film deposition equipment provided by the second aspect of the present invention.

[0036] Specifically, please refer to Figure 1 . Figure 1 The structural schematic diagram of the thin film deposition equipment provided by some embodiments of the present invention is shown.

[0037] In Figure 1 In the illustrated embodiment, the above-mentioned thin film deposition apparatus provided by the second aspect of the present invention includes a process chamber and at least one gas source 20. Herein, the process chamber includes a heating plate 11, a support mechanism 12, and a heat dissipation plate 13 provided by the first aspect of the present invention. At least one gas source 20 is at least connected to the ventilation gap between the heat dissipation plate 13 and the support mechanism 12.

[0038] Please further refer to Figures 1 to 3 . Figure 2 FIG. shows a schematic structural diagram of the upper surface of the heat dissipation plate provided according to some embodiments of the present invention. Figure 3 FIG. shows a schematic structural diagram of the lower surface of the heat dissipation plate provided according to some embodiments of the present invention.

[0039] In Figures 1 to 3 In the illustrated embodiment, the above-mentioned heat dissipation plate body 131 and a plurality of support columns 132 provided by the first aspect of the present invention. Herein, a plurality of support columns 132 are provided at the bottom of the heat dissipation plate body 131 to support the heat dissipation plate body 131 so as to maintain a ventilation gap between it and the lower support mechanism 12. The ventilation gap is connected to a gas source 20 to obtain a gas, and the gas enters the ventilation gap from the central region of the heat dissipation plate body 131 and diffuses towards the edge region of the heat dissipation plate body 131.

[0040] Further, in some embodiments, the diameter of the above-mentioned heat dissipation plate body 131 ranges from 200 mm to 380 mm, and the diameter of the hollow portion ranges from 60 to 160 mm. The thickness of the above-mentioned heat dissipation plate body 131 ranges from 5 mm to 100 mm. The material of the heat dissipation plate bottom plate includes Al2O3, AlN, and Hastelloy.

[0041] Alternatively, in some embodiments, the height of the support column 132 ranges from 5 mm to 25 mm.

[0042] Alternatively, in some embodiments, the distance between the heat dissipation plate body 131 and the heating plate 11 ranges from 0.3 mm to 3 mm.

[0043] Furthermore, in Figures 1 to 3 In the illustrated embodiment, the above-mentioned heat dissipation plate body 131 is of an annular structure, and the gas source 20 is located below the heat dissipation plate body 131. The gas provided by it first passes over the heat dissipation plate body 131 through the hollow portion of the annular structure to contact the heating plate 11 above it, and then returns to the ventilation gap through the hollow portion and diffuses towards the edge region of the heat dissipation plate body 131.

[0044] Further, in some embodiments, the above-mentioned gas source 20 is a heat dissipation gas source, which provides heat dissipation gas to the ventilation gap during the thin film deposition stage to dissipate heat from the heat dissipation plate 13 and the heating plate 11 above it.

[0045] Here, the above-mentioned heat dissipation gas is preferably at least one of Ar, N2, and He.

[0046] Alternatively, in some embodiments, the above-mentioned gas source 20 is a clean gas source, which provides a clean gas to the ventilation gap during the cleaning stage of the process chamber to purge contaminants at the bottom of the heating plate 11 and / or in the ventilation gap.

[0047] Here, the above-mentioned clean gas preferably includes at least O2 and Ar.

[0048] In addition, in Figure 2 the illustrated embodiment, a circumferential groove is provided on the upper surface of the heat dissipation plate body 131 to achieve circumferential temperature adjustment of the heating plate 11 above the heat dissipation plate 13. Here, the groove can be paired with ceramic rings of different sizes according to actual process performance to further achieve circumferential temperature adjustment of the heating plate 11 above the heat dissipation plate 13.

[0049] Furthermore, in some embodiments, the inner diameter range of the above-mentioned groove is 180 mm to 300 mm, and the depth range of the groove drop is 0.1 mm to 100 mm.

[0050] The working principle of the above-mentioned heat dissipation plate will be described below in conjunction with some embodiments of thin film deposition methods. Those skilled in the art can understand that these embodiments of thin film deposition methods are only some non-limiting implementation manners provided by the present invention, aiming to clearly show the main concept of the present invention and provide some specific solutions convenient for the public to implement, rather than limiting all functions or all working modes of the heat dissipation plate. Similarly, the heat dissipation plate is also a non-limiting implementation manner provided by the present invention, and does not limit the execution subject and execution order of each step in these thin film deposition methods.

[0051] Specifically, during the use of the PECVD thin film deposition equipment, the heating plate 11 in the process chamber serves as the upper electrode, and the shower plate serves as the lower electrode to perform a thin film deposition process on the wafer to be processed.

[0052] After that, during the thin film deposition stage, the technician can introduce a heat dissipation gas into the ventilation gap between the above-mentioned heat dissipation plate 13 and the support mechanism 13 below it to dissipate heat from at least the heat dissipation plate 13.

[0053] Specifically, during the process of depositing the thin film, the technician can control the thin film deposition equipment to flow some carrier gas and special gas from the shower plate. At the same time, some carrier gas will also flow into the gas source 20 at the bottom of the process chamber. Here, the carrier gas flowing into the bottom can be 500-6000sccm N2 gas, 500-14000sccm Ar gas and 500-8000sccm He gas. In addition, the technician can also preferably select the appropriate carrier gas type and ratio according to the process requirements.

[0054] Thereafter, during a cleaning phase of the process chamber, a technician may introduce a cleaning gas into the vent gap to at least purge contaminants in the vent gap.

[0055] Specifically, during the execution of the cleaning recipe, the technician can flow an appropriate amount of cleaning gas into the gas source 20 at the bottom of the process chamber. Here, the cleaning gas can be 200-5000 sccm of O2 gas and 500-8000 sccm of Ar gas, so as to avoid particle accumulation and play a role in cleaning the bottom. In operation 104, the uniformity and particle size of the film are tested to be improved.

[0056] Please refer to Figure 4 and Figure 5 . Figure 4 A curve chart showing how the normalized value of the extinction coefficient on the wafer surface varies with the wafer radius according to some embodiments of the present invention. Figure 5 A schematic diagram showing the difference in extinction coefficient of a thin film on a wafer surface according to some embodiments of the present invention is shown.

[0057] In order to verify the heat dissipation effect of the heat sink provided by the first aspect of the present invention on the heating disk during the thin film deposition process, the technician can compare the thin film extinction coefficient on the surface of the wafer produced by the prior art with the thin film extinction coefficient on the surface of the wafer produced by the heat sink, thin film deposition device and method provided by the present invention. Here, on the thin film on the surface of the wafer, the smaller the extinction coefficient, the lower the relative temperature of the thin film area.

[0058] like Figure 4 and Figure 5 As shown, the temperature uniformity of the thin film on the surface of the wafer produced by the above-mentioned heat sink, thin film deposition equipment and method provided by the present invention is relatively high, thereby improving the uniformity of the thin film deposited on the surface of the wafer and improving the wafer processing quality.

[0059] In summary, the above-mentioned heat sink, thin film deposition equipment and thin film deposition method provided by the present invention can form an air flow loop by maintaining a ventilation gap under the heat sink body to take away the heat from the central area of ​​the heating disk, thereby dissipating the heat from the heating disk.

[0060] Although the foregoing methods are illustrated and described as a series of acts for simplicity of explanation, it should be understood and appreciated that the methods are not limited by the order of the acts, as some acts may occur in different orders and / or concurrently with other acts not illustrated and described herein or other acts that are understandable to those skilled in the art, in accordance with one or more embodiments.

[0061] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A heat dissipation plate, characterized in that, Comprising: The heat dissipation plate body; And A plurality of support columns, arranged at the bottom of the heat dissipation plate body, for supporting the heat dissipation plate body to maintain a ventilation gap between it and the underlying support mechanism, wherein the ventilation gap is connected to a gas source to obtain a gas, and the gas enters the ventilation gap from the central region of the heat dissipation plate body and diffuses towards the edge region of the heat dissipation plate body.

2. The heat dissipation plate according to claim 1, characterized in that, The heat dissipation plate body is of an annular structure, and the gas source is located below the heat dissipation plate body. The gas provided by it first passes over the heat dissipation plate body through the hollow part of the annular structure to contact the heating plate above it, then returns to the ventilation gap through the hollow part and diffuses towards the edge region of the heat dissipation plate body.

3. The heat dissipation plate according to claim 1, characterized in that The gas source is a heat dissipation gas source, which provides heat dissipation gas to the ventilation gap during the thin film deposition stage to dissipate heat from the heat dissipation plate and the heating plate above it.

4. The heat dissipation plate according to claim 3, characterized in that, The heat dissipation gas is at least one of Ar, N2, and He.

5. The heat dissipation plate according to claim 2, wherein, The gas source is a cleaning gas source, which provides cleaning gas to the ventilation gap during the cleaning stage of the process chamber to purge contaminants at the bottom of the heating plate and / or in the ventilation gap.

6. The heat dissipation plate according to claim 5, characterized in that, The cleaning gas at least includes O2 and Ar.

7. The heat dissipation plate according to claim 1, characterized in that, A circumferential groove is provided on the upper surface of the heat dissipation plate body to achieve circumferential temperature adjustment of the heating plate above the heat dissipation plate.

8. The heat dissipation plate according to claim 2, wherein The diameter range of the heat dissipation plate body is 200mm - 380mm, the diameter range of its hollow part is 60 - 160mm, and / or The height range of the support column is 5mm - 25mm, and / or The distance range between the upper surface of the heat dissipation plate body and the lower surface of the heating plate is 0.3mm - 3mm.

9. A thin film deposition device, characterized in that, Comprising: A process chamber, which includes a heating plate, a support mechanism, and a heat dissipation plate as described in any one of claims 1 - 8; And At least one gas source, at least connected to the ventilation gap between the heat dissipation plate and the support mechanism.

10. A thin film deposition method, characterized in that, Including the following steps: During the thin film deposition stage, introduce heat dissipation gas into the ventilation gap between the heat dissipation plate as described in any one of claims 1 - 8 and the underlying support mechanism to at least dissipate heat from the heat dissipation plate.

11. The thin film deposition method according to claim 10, characterized in that, It further includes the following steps: During the cleaning stage of the process chamber, introduce cleaning gas into the ventilation gap to at least purge contaminants in the ventilation gap.

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