Thin film deposition equipment and productivity optimization method thereof

Abstract

The invention provides thin film deposition equipment and a productivity optimization method thereof. The thin film deposition equipment comprises an equipment front-end module, a latch cavity, a plurality of sets of deposition execution assemblies, a buffer cavity and a controller. The controller is configured to determine the film transfer time length of the thin film deposition equipment according to the maximum value of the first working time length, the second working time length, the third working time length, the fourth working time length and the fifth working time length; and outputting an optimization prompt for at least one deposition execution assembly of the thin film deposition equipment according to the number of the process chambers, the wafer conveying duration and the process duration, so that the wafer is prevented from being stopped and waited due to insufficient mechanical capacity in the conveying process, the deposition processing efficiency of the process chambers is fully exerted, and the efficiency of the thin film deposition equipment is improved. And the restriction of mechanical productivity on the overall equipment productivity is eliminated, so that the operation efficiency and the equipment utilization rate of a semiconductor manufacturing production line are remarkably improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and particularly to a thin film deposition device, a method for optimizing the production capacity of a thin film deposition device, and a computer-readable storage medium. Background Art

[0002] With the rapid development of semiconductor manufacturing processes, as a core process equipment, the production efficiency of thin film deposition devices directly affects the production capacity of wafer manufacturing. In the prior art, thin film deposition devices usually include a transfer chamber, a process chamber, and an external transfer mechanism. Wafers need to be multi-stage transferred between an external loading position, the transfer chamber, and multiple process chambers through the transfer mechanism. The specific process includes: wafers are sent from the outside into the transfer chamber through the transfer mechanism, then distributed to each process chamber for deposition processing, and after completion, they are sent back to the outside in the reverse direction.

[0003] In current thin film deposition devices, the transfer mechanism needs to frequently perform wafer loading, positioning, and cross-chamber transfer operations. The number of wafers that can be transferred per unit time by its mechanical structure cannot match the throughput required for parallel processing of multiple process chambers. Therefore, the mechanical production capacity of wafer transfer cannot meet the process production capacity requirements. This imbalance in production capacity matching causes wafers to queue and wait at the transfer chamber or the process chamber interface, resulting in the overall production capacity of the device being gradually limited by the mechanical wafer transfer efficiency.

[0004] In order to overcome the above-mentioned defects existing in the prior art, there is an urgent need in the art for a thin film deposition technology to avoid wafers from stagnating and waiting due to insufficient mechanical production capacity during the transfer process, thereby eliminating the restriction of mechanical production capacity on the overall device production capacity, giving full play to the deposition processing efficiency of the process chamber, and significantly improving the operation efficiency and equipment utilization rate of the semiconductor manufacturing production line. Summary of the Invention

[0005] The following gives a brief overview of one or more aspects to provide a basic understanding of these aspects. This overview is not an exhaustive survey of all contemplated aspects, and is neither intended to identify key or decisive elements of all aspects nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description to follow.

[0006] In order to overcome the above-mentioned defects existing in the prior art, the present invention provides a thin film deposition device, a method for optimizing the production capacity of a thin film deposition device, and a computer-readable storage medium, which are used to avoid wafers from stagnating and waiting due to insufficient mechanical production capacity during the transfer process, thereby eliminating the restriction of mechanical production capacity on the overall device production capacity, giving full play to the deposition processing efficiency of the process chamber, and significantly improving the operation efficiency and equipment utilization rate of the semiconductor manufacturing production line.

[0007] Specifically, the thin film deposition equipment provided by the first aspect of the present invention includes: a front end of line (FEOL) module that transfers a wafer between a transfer cassette and a latching chamber through a first working duration; the latching chamber that switches between a vacuum state and an ambient pressure state inside the latching chamber through a second working duration; multiple sets of deposition execution components, each set of deposition execution components including a transfer chamber and a plurality of process chambers provided at the back end of the transfer chamber, each of the process chambers including a plurality of deposition stations, wherein the transfer chamber transfers wafers between the latching chamber and each of the process chambers through a third working duration, each of the process chambers transfers wafers between its corresponding deposition stations through a fourth working duration, and performs a thin film deposition process on each of the wafers through a process duration; a buffer chamber provided between two adjacent transfer chambers, wherein wafers to be transferred are temporarily stored by transferring wafers between the latching chamber and the buffer chamber through a fifth working duration; and a controller configured to: determine the wafer transfer duration of the thin film deposition equipment according to the maximum value among the first working duration, the second working duration, the third working duration, the fourth working duration, and the fifth working duration; and output an optimization prompt for at least one of the deposition execution components of the thin film deposition equipment according to the number of the process chambers, the wafer transfer duration, and the process duration.

[0008] Further, in some embodiments of the present invention, the step of outputting an optimization prompt for at least one of the deposition execution components of the thin film deposition equipment according to the number of the process chambers, the wafer transfer duration, and the process duration includes: determining a total wafer transfer duration according to the number of the process chambers and the wafer transfer duration; and outputting an optimization prompt for at least one of the deposition execution components of the thin film deposition equipment according to the process duration and the total wafer transfer duration.

[0009] Further, in some embodiments of the present invention, the expression for determining the total wafer transfer duration according to the number of the process chambers and the wafer transfer duration is as follows:

[0010] T total =(N1 - 1)*T max ,

[0011] wherein, T total is the total wafer transfer duration, N1 is the number of the process chambers, and T max is the wafer transfer duration.

[0012] Further, in some embodiments of the present invention, the step of outputting an optimization prompt for at least one of the deposition execution components of the thin film deposition equipment according to the process duration and the total wafer transfer duration includes: determining that the process productivity of the thin film deposition equipment is optimal in response to the process duration being greater than or equal to the total wafer transfer duration; and determining that the process productivity of the thin film deposition equipment is non-optimal in response to the process duration being less than the total wafer transfer duration.

[0013] Further, in some embodiments of the present invention, the step of outputting an optimization prompt for at least one of the deposition execution components of the thin film deposition equipment according to the process duration and the total wafer transfer duration further includes: outputting an optimization prompt to increase the number of groups of the deposition execution components in response to the process productivity of the thin film deposition equipment being non-optimal, and / or outputting an optimization prompt to increase the number of process chambers in each of the deposition execution components in response to the process productivity of the thin film deposition equipment being non-optimal, and / or outputting an optimization prompt to increase the number of deposition stations in each of the process chambers in response to the process productivity of the thin film deposition equipment being non-optimal.

[0014] Further, in some embodiments of the present invention, the latch chamber adopts a two-level structure, and at least one pair of brackets is provided on each level for placing the wafers, and / or the buffer chamber adopts a two-level structure, and at least one pair of brackets is provided on each level, and each pair of brackets is located at different heights.

[0015] Further, in some embodiments of the present invention, the thin film deposition equipment further includes: a manipulator including two robotic arms provided at different levels for quickly transferring the wafers between the process chamber and the buffer chamber and / or the latch chamber in cooperation with the two-level structure of the buffer chamber and / or the latch chamber.

[0016] Further, in some embodiments of the present invention, the thin film deposition equipment further includes: a door valve provided on one side of the buffer chamber for separating two adjacent transfer chambers.

[0017] Further, in some embodiments of the present invention, the thin film deposition equipment further includes: a throttle valve provided in the transfer chamber close to the latch chamber for maintaining the transfer chamber in a vacuum state; and an angle valve provided in the transfer chamber far from the latch chamber for closing the front-stage pipeline and restoring the air pressure in the transfer chamber to the ambient air pressure.

[0018] In addition, the method for optimizing the production capacity of the thin film deposition equipment provided by the second aspect of the present invention includes the following steps: determining the wafer transfer time of the thin film deposition equipment according to the maximum value among the first working time, the second working time, the third working time, the fourth working time, and the fifth working time; and outputting an optimization prompt for at least one of the deposition execution components of the thin film deposition equipment as described in any one of the first aspects of the present invention according to the number of process chambers, the wafer transfer time, and the process time.

[0019] In addition, a computer-readable storage medium provided by the third aspect of the present invention stores computer instructions. When the computer instructions are executed by a processor, the method for optimizing the production capacity of the thin film deposition equipment as described in the second aspect of the present invention is implemented. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] After reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings, the above features and advantages of the present invention can be better understood. In the drawings, the components are not necessarily drawn to scale, and components with similar relevant characteristics or features may have the same or similar reference numerals.

[0021] Figure 1 The structural schematic diagram of the thin film deposition equipment provided by some embodiments of the present invention is shown.

[0022] Figure 2 The structural schematic diagram of the buffer chamber provided by some embodiments of the present invention is shown.

[0023] Figure 3 The 3D structural schematic diagram of the door valve provided by some embodiments of the present invention is shown.

[0024] Figure 4 The cross-sectional structural schematic diagram of the door valve provided by some embodiments of the present invention is shown.

[0025] Figure 5 The installation structural schematic diagram of the door valve provided by some embodiments of the present invention is shown.

[0026] Figure 6 The flowchart of the method for optimizing the production capacity of the thin film deposition equipment provided by some embodiments of the present invention is shown.

[0027] REFERENCE NUMERALS:

[0028] 10 Equipment Front End Module

[0029] 20 Transfer Cassette

[0030] 30 Latch Chamber

[0031] 40 Transfer Chamber

[0032] 41 Manipulator

[0033] 50 Process Chamber

[0034] 51 Deposition Station

[0035] 60 Buffer Chamber

[0036] 61 Bracket

[0037] 70 Door Plate Valve Detailed Embodiment

[0038] The following specific embodiments illustrate the implementation manners of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiments, this does not mean that the features of this invention are limited to this implementation manner. On the contrary, the purpose of introducing the invention in conjunction with the implementation manner is to cover other alternatives or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, many specific details will be included in the following description. The present invention can also be implemented without using these details. In addition, in order to avoid confusing or obscuring the key points of the present invention, some specific details will be omitted in the description.

[0039] In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

[0040] In addition, the "upper", "lower", "left", "right", "top", "bottom", "horizontal", and "vertical" used in the following description should be understood as the orientations shown in this section and the relevant drawings. This relative term is only for the convenience of description, and it does not mean that the device described needs to be manufactured or operated in a specific orientation, so it should not be understood as a limitation to the present invention.

[0041] It can be understood that although the terms "first", "second", "third", etc. can be used here to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first component, region, layer, and / or part discussed below can be called the second component, region, layer, and / or part without departing from some embodiments of the present invention.

[0042] As described above, with the rapid development of semiconductor manufacturing processes, thin film deposition equipment, as a core process tool, its production efficiency directly affects the production capacity of wafer manufacturing. In the prior art, thin film deposition equipment typically includes a transfer chamber, a process chamber, and an external transfer mechanism. Wafers need to be multi-stage transferred between an external loading position, the transfer chamber, and multiple process chambers through the transfer mechanism. The specific process includes: wafers are sent from the outside into the transfer chamber through the transfer mechanism, then distributed to each process chamber for deposition processing, and after completion, they are sent back to the outside in reverse.

[0043] In current thin film deposition equipment, the transfer mechanism needs to frequently perform wafer loading, positioning, and cross-chamber transfer operations. The number of wafers that its mechanical structure can transfer per unit time cannot match the throughput required for parallel processing of multiple process chambers. Therefore, the mechanical production capacity of wafer transfer cannot meet the process production capacity requirements. This imbalance in production capacity matching causes wafers to queue and wait at the transfer chamber or process chamber interfaces, resulting in the overall production capacity of the equipment being gradually limited by the mechanical wafer transfer efficiency.

[0044] To overcome the above-mentioned defects existing in the prior art, the present invention provides a thin film deposition equipment, a method for optimizing the production capacity of a thin film deposition equipment, and a computer-readable storage medium, which are used to avoid wafers from stagnating and waiting due to insufficient mechanical production capacity during the transfer process, thereby eliminating the restriction of mechanical production capacity on the overall equipment production capacity, enabling the deposition processing efficiency of the process chamber to be fully exerted, and significantly improving the operation efficiency and equipment utilization rate of the semiconductor manufacturing production line.

[0045] In some non-limiting embodiments, the method for optimizing the production capacity of the thin film deposition equipment provided in the second aspect of the present invention can be implemented based on the thin film deposition equipment provided in the first aspect of the present invention. Specifically, the thin film deposition equipment is configured with a memory and a processor. The memory includes, but is not limited to, the above-mentioned computer-readable storage medium provided in the third aspect of the present invention, on which computer instructions are stored. The processor is connected to the memory and is configured to execute the computer instructions stored on the memory to implement the method for optimizing the production capacity of the thin film deposition equipment provided in the first aspect of the present invention.

[0046] For specific reference, please refer to Figure 1 , Figure 1 which shows a schematic structural diagram of a thin film deposition equipment provided according to some embodiments of the present invention.

[0047] As Figure 1 shown, the thin film deposition equipment includes an equipment front end module 10, a latch chamber 30, multiple groups of deposition execution components, a buffer chamber 60, and a controller.

[0048] The front-end module 10 of the device transfers wafers between the transfer cassette 20 and the latching chamber 30 via a first working duration. The latching chamber 30 switches between a vacuum state and an ambient pressure state inside the latching chamber 30 via a second working duration. The multiple groups of deposition execution components, each group of deposition execution components includes a transfer chamber 40 and a plurality of process chambers 50 arranged at the back end of the transfer chamber 40. Each process chamber 50 includes a plurality of deposition stations 51. The transfer chamber 40 transfers wafers between the latching chamber 30 and each process chamber 50 via a third working duration. Each process chamber 50 transfers wafers between its corresponding deposition stations 51 via a fourth working duration and performs a thin film deposition process on each wafer via a process duration. The buffer chamber 60 is arranged between two adjacent transfer chambers 40. Wafers to be transferred are temporarily stored by transferring wafers between the latching chamber 30 and the buffer chamber 60 via a fifth working duration.

[0049] The controller is configured to: determine the wafer transfer duration of the thin film deposition device according to the maximum value among the first working duration, the second working duration, the third working duration, the fourth working duration, and the fifth working duration; and output an optimization prompt for at least one deposition execution component of the thin film deposition device according to the number of process chambers 50, the wafer transfer duration, and the process duration.

[0050] Thus, the thin film deposition device can avoid wafers from stagnating and waiting due to insufficient mechanical production capacity during the transfer process, thereby eliminating the restriction of mechanical production capacity on the overall device production capacity, giving full play to the deposition processing efficiency of the process chambers, and significantly improving the operation efficiency and equipment utilization rate of the semiconductor manufacturing production line.

[0051] For details, please refer to Figure 2 , Figure 2 which shows a schematic structural diagram of a buffer chamber provided according to some embodiments of the present invention.

[0052] As Figure 2 shown, the buffer chamber 60 adopts a double-level structure, at least one pair of brackets 61 is provided on each level, and each pair of brackets 61 is located at different heights. Correspondingly, the latching chamber 30 can adopt a double-level structure, and at least one pair of brackets 61 is provided on each level for placing wafers.

[0053] In some embodiments, the latching chamber 30 can be a double-level four-bracket structure, the number of process chambers 50 is four, and six wafers can be deposited at one time in each process chamber 50. The buffer chamber 60 can be a double-level four-chamber six-bracket structure, so as to meet the wafer preparation requirements for depositing six wafers at one time in the process chambers 50, and wafers can be quickly exchanged during wafer transfer, improving mechanical production capacity.

[0054] Further, the thin film deposition equipment further includes a manipulator 41. The manipulator 41 includes two manipulator 41 arms provided at different levels, which are used to cooperate with the double-level structure of the buffer chamber 60 and / or the latch chamber 30 to quickly transfer the wafers between the process chamber 50 and the buffer chamber 60 and / or the latch chamber 30. The manipulator 41 cooperates with the different heights of at least a pair of brackets 61 in the buffer chamber 60 to realize the automatic centering function of the manipulator 41 for the wafers, so as to meet the fast and stable transmission of the wafers and improve the process productivity of the entire system.

[0055] Herein, the transfer chamber 40 can quickly transfer the wafers into the process chamber 50, and during the wafer process time, six unprocessed wafers are stored in the buffer chamber 60. When the process in the process chamber is completed, the manipulator 41 can quickly exchange the six wafers in the process chamber with the six unprocessed wafers in the buffer chamber 60 to ensure that the process chamber quickly enters the next process. Herein, the four chambers can perform the same process or continuous processes respectively. After that, the transfer chamber 40 transfers the processed wafers back to the equipment front-end module 10.

[0056] Please refer to Figures 3 to 4 , Figure 3 which shows a 3D structural schematic diagram of a door panel valve provided according to some embodiments of the present invention. Figure 4 which shows a cross-sectional structural schematic diagram of a door panel valve provided according to some embodiments of the present invention.

[0057] As Figures 3 to 4 shown, the thin film deposition equipment further includes a door panel valve 70, which is provided on one side of the buffer chamber 60 and is used to separate two adjacent transfer chambers 40, so as to allow the transfer chamber 40 far from the latch chamber 30 to be detached from the thin film deposition equipment, while enabling the transfer chamber 40 close to the latch chamber 30 to continue working. Herein, the door panel valve 70 can preferably be set to four to cooperate with the four-chamber structure of the buffer chamber 60.

[0058] In some embodiments, the thin film deposition equipment further includes a throttle valve and an angle valve. The throttle valve is provided in the transfer chamber 40 close to the latch chamber 30 and is used to keep the transfer chamber 40 in a vacuum state, so that the transfer chamber 40 works independently.

[0059] In some embodiments, the angle valve is provided in the transfer chamber 40 far from the latch chamber 30 and is used to close the front-stage pipeline and perform an atmospheric backfill on the transfer chamber 40 to restore the air pressure therein to the ambient air pressure.

[0060] Here, when the transfer chamber 40 far from the latch chamber 30 fails, the system controls the door plate valve 70 to close to separate the two transfer chambers 40 by recognizing the abnormal pressure in the transfer chamber 40 far from the latch chamber 30. Specifically, the transfer chamber 40 close to the latch chamber 30 works independently by automatically stabilizing the wafer transfer pressure through the throttle valve. The transfer chamber 40 far from the latch chamber 30 closes the pre-stage pipeline through the angle valve and backfills the transfer chamber 40 with atmosphere by using the MFC, so as to separate the two transfer chambers 40. When the transfer chamber 40 far from the latch chamber 30 is under maintenance, the transfer chamber 40 close to the latch chamber 30 can work normally without being affected, thereby improving the fault tolerance of the system and reducing the risk of downtime.

[0061] Please refer to Figure 5 , Figure 5 which shows a schematic installation structure diagram of the door plate valve provided by some embodiments of the present invention.

[0062] As Figure 5 shown, the door plate valve 70 can also be installed on both sides of the latch chamber 30, which can achieve complete isolation of the cavity of the latch chamber 30. It can not only balance the pressure difference between the latch chamber 30 and the pipeline, but also perform maintenance, cleaning or replacement of internal components by closing the valves on both sides.

[0063] Hereinafter, some embodiments of the production capacity optimization method of the thin film deposition equipment will be combined to describe the optimization principle of the above thin film deposition equipment. Those skilled in the art can understand that these embodiments of the production capacity optimization method of the thin film deposition equipment are only some non-limiting implementation manners provided by the present invention, aiming to clearly show the main concept of the present invention and provide some specific solutions convenient for the public to implement, rather than limiting all functions or all working modes of the thin film deposition equipment. Similarly, the thin film deposition equipment is also only some non-limiting implementation manners provided by the present invention, and does not limit the execution subject or execution order of each step in the production capacity optimization method of these thin film deposition equipment.

[0064] Specifically, please refer to Figure 6 , Figure 6 which shows a schematic flow diagram of the production capacity optimization method of the thin film deposition equipment provided by some embodiments of the present invention.

[0065] As Figure 6 shown, the controller of the thin film deposition equipment can first execute step S1: determine the wafer transfer duration of the thin film deposition equipment according to the maximum value among the first working duration, the second working duration, the third working duration, the fourth working duration and the fifth working duration.

[0066] Then, the controller can execute step S2: output an optimization prompt for at least one deposition execution component of the thin film deposition equipment according to the number of process chambers 50, the wafer transfer duration and the process duration.

[0067] Specifically, first, according to the number of process chambers 50 and the wafer transfer duration, the total wafer transfer duration is determined. Here, its expression is as follows:

[0068] T total =(N1 - 1)*T max ,

[0069] where T total is the total wafer transfer duration, in seconds, N1 is the number of process chambers 50, in units, and T max is the wafer transfer duration, in seconds.

[0070] After that, according to the process duration and the total wafer transfer duration, an optimization prompt for at least one deposition execution component of the thin film deposition equipment is output.

[0071] Specifically, in response to the process duration being greater than or equal to the total wafer transfer duration, it is determined that the process productivity of the thin film deposition equipment is optimal. Correspondingly, in response to the process duration being less than the total wafer transfer duration, it is determined that the process productivity of the thin film deposition equipment is non - optimal.

[0072] In some embodiments, in response to the process productivity of the thin film deposition equipment being non - optimal, an optimization prompt to increase the number of groups of deposition execution components is output.

[0073] In some embodiments, in response to the process productivity of the thin film deposition equipment being non - optimal, an optimization prompt to increase the number of process chambers 50 in each deposition execution component is output.

[0074] In some embodiments, in response to the process productivity of the thin film deposition equipment being non - optimal, an optimization prompt to increase the number of deposition stations 51 in each process chamber 50 is output.

[0075] Here, the expression for the mechanical productivity of the thin film deposition equipment is:

[0076]

[0077] where WPH is the mechanical productivity, in wafers / h, N1 is the number of process chambers 50, in units, N2 is the number of deposition stations 51 in each process chamber 50, in units, and T max is the wafer transfer duration, in seconds.

[0078] In summary, the thin film deposition equipment and its production capacity optimization method provided by the present invention can output optimization prompts for at least one deposition execution component of the thin film deposition equipment via the number of process chambers 50, the wafer transfer duration, and the process duration, avoiding the stagnant waiting of wafers due to insufficient mechanical production capacity during the transfer process, thereby eliminating the restriction of mechanical production capacity on the overall equipment production capacity, giving full play to the deposition processing efficiency of the process chamber, and significantly improving the operation efficiency and equipment utilization rate of the semiconductor manufacturing production line.

[0079] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions not illustrated and described herein but understood by those skilled in the art.

[0080] The previous description of the present disclosure is provided to enable any person skilled in the art to make or use the present disclosure. Various modifications to the present disclosure will be apparent to those skilled in the art, and the general principles defined herein can be applied to other variations without departing from the spirit or scope of the present disclosure. Thus, the present disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A thin film deposition device, characterized in that, Comprising: A device front-end module that transfers wafers between a transfer cassette and a latch chamber via a first working duration; The latch chamber that switches between a vacuum state and an ambient pressure state within the latch chamber via a second working duration; Multiple sets of deposition execution components, each set of deposition execution components including a transfer chamber and a plurality of process chambers provided at the back end of the transfer chamber, each of the process chambers including a plurality of deposition stations. Among them, the transfer chamber transfers wafers between the latch chamber and each of the process chambers via a third working duration, and each of the process chambers transfers wafers between its corresponding deposition stations via a fourth working duration and performs a thin film deposition process on each of the wafers via a process duration; A buffer chamber provided between two adjacent transfer chambers. Among them, wafers are transferred between the latch chamber and the buffer chamber via a fifth working duration for temporarily storing the wafers to be transferred; and A controller configured to: determine the wafer transfer duration of the thin film deposition device according to the maximum value among the first working duration, the second working duration, the third working duration, the fourth working duration, and the fifth working duration; and output an optimization prompt for at least one of the deposition execution components of the thin film deposition device according to the number of process chambers, the wafer transfer duration, and the process duration.

2. The thin film deposition apparatus according to claim 1, wherein The step of outputting an optimization prompt for at least one of the deposition execution components of the thin film deposition device according to the number of process chambers, the wafer transfer duration, and the process duration includes: Determining a total wafer transfer duration according to the number of process chambers and the wafer transfer duration; and Outputting an optimization prompt for at least one of the deposition execution components of the thin film deposition device according to the process duration and the total wafer transfer duration.

3. The thin film deposition device according to claim 2, wherein, The expression for determining the total wafer transfer duration according to the number of process chambers and the wafer transfer duration is as follows: T total =(N1 - 1)*T max , Among them, T total is the total wafer transfer time, N1 is the number of process chambers, and T max is the wafer transfer time.

4. The thin film deposition apparatus according to claim 2, wherein, The step of outputting an optimization prompt for at least one of the deposition execution components of the thin film deposition device according to the process duration and the total wafer transfer duration includes: Responding to the process duration being greater than or equal to the total wafer transfer duration, determining that the process production capacity of the thin film deposition device is optimal; and Responding to the process duration being less than the total wafer transfer duration, determining that the process production capacity of the thin film deposition device is non-optimal.

5. The thin film deposition device according to claim 4, wherein, The step of outputting an optimization prompt for at least one of the deposition execution components of the thin film deposition device according to the process duration and the total wafer transfer duration further includes: Responding to the process production capacity of the thin film deposition device being non-optimal, outputting an optimization prompt to increase the number of groups of the deposition execution components, and / or Responding to the process production capacity of the thin film deposition device being non-optimal, outputting an optimization prompt to increase the number of process chambers in each of the deposition execution components, and / or Responding to the process production capacity of the thin film deposition device being non-optimal, outputting an optimization prompt to increase the number of deposition stations in each of the process chambers.

6. The thin film deposition apparatus according to claim 1, wherein, The latch chamber adopts a two-level structure, and at least one pair of brackets are provided on each level for placing the wafers, and / or The buffer cavity adopts a double - level structure, and at least one pair of brackets is provided in each level, and each pair of brackets is located at different heights.

7. The thin film deposition device according to claim 6, wherein It further includes: A manipulator, including two robotic arms provided at different levels, which are used to cooperate with the double - level structure of the buffer cavity and / or the latching cavity to quickly transfer the wafer between the process chamber and the buffer cavity and / or the latching cavity.

8. The thin film deposition apparatus according to claim 1, wherein It further includes: A door valve, provided on one side of the buffer cavity, which is used to separate two adjacent transfer chambers, allowing the transfer chamber far from the latching cavity to be disconnected from the thin - film deposition equipment, while enabling the transfer chamber close to the latching cavity to continue operating.

9. The thin film deposition device according to claim 8, characterized in that, It further includes: A throttle valve, provided in the transfer chamber close to the latching cavity, which is used to maintain the transfer chamber in a vacuum state; And An angle valve, provided in the transfer chamber far from the latching cavity, which is used to close the pre - stage pipeline and restore the air pressure in the transfer chamber to the ambient air pressure.

10. A method for optimizing the production capacity of a thin film deposition device, characterized in that, It includes the following steps: Determine the wafer transfer time of the thin - film deposition equipment according to the maximum value among the first working time, the second working time, the third working time, the fourth working time and the fifth working time; And Output an optimization prompt for at least one of the deposition execution components of the thin - film deposition equipment as described in any one of claims 1 - 9 according to the number of process chambers, the wafer transfer time and the process time.

11. A computer-readable storage medium having computer instructions stored thereon, characterized in that, When the computer instruction is executed by a processor, it implements the production capacity optimization method of the thin - film deposition equipment as described in claim 10.

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